Reaction chamber for epitaxy process and multiwafer planetary epitaxy apparatus

Abstract

The application discloses a reaction chamber of an epitaxy process and a multi-piece planetary epitaxy device, and relates to the field of semiconductor manufacturing equipment. The reaction chamber comprises a top cover arranged on the top of the reaction chamber; a base rotatably arranged in the reaction chamber and arranged in parallel and spaced apart from the top cover; and a plurality of satellite discs circumferentially arranged on the base and used for carrying workpieces to be processed. The top cover is provided with a first gas inlet structure and a second gas inlet structure. The surface of the workpiece to be processed comprises a plurality of concentric regions. The second gas inlet structure comprises a plurality of carrier gas output elements corresponding to the regions. The carrier gas output by the second gas inlet structure can press down at least part of the reaction gas output by the first gas inlet structure. By adjusting the carrier gas flow of any carrier gas output element, the film growth rate of the region of the workpiece to be processed corresponding to the carrier gas output element can be changed. The application can press down and scatter the reaction gas by the carrier gas, so that the film growth rates of the regions of the workpiece to be processed tend to be consistent, and the film thickness is more uniform.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a reaction chamber for epitaxy process and a multi-wafer planetary epitaxy device. BACKGROUND

[0002] At present, the mainstream silicon carbide epitaxial growth equipment on the market includes horizontal single-chip (represented by LPE in Italy), planetary multi-chip (represented by Aixtron in Germany), the LPE horizontal single-chip has an outlet divided into a middle path and two side paths, and the uniformity of the gas flow field is adjusted by adjusting the gas flow of the middle and side paths and the rotation speed of the tray; the Aixtron planetary multi-chip has a tower-shaped showerhead, generally 5 layers, the graphite base revolves and the graphite small disc rotates, and the uniformity of the flow field is adjusted by adjusting the gas flow of each layer of the showerhead and the revolution / rotation speed of the graphite large / small discs, the thickness uniformity of the LPE and Aixtron epitaxial growth equipment is about 2%, as the device requirements are getting higher and higher, it has not met the requirements of high-quality devices for uniformity, and it is urgent to improve the flow field uniformity of the epitaxial growth equipment. SUMMARY

[0003] In order to solve the problem that the film growth uniformity in the above epitaxial process cannot meet the requirements, the first aspect of the present application provides a reaction chamber for epitaxy process, comprising:

[0004] a reaction cavity;

[0005] an upper cover arranged on the top of the reaction cavity;

[0006] a base rotatably arranged in the reaction cavity and arranged in parallel and spaced apart from the upper cover;

[0007] a plurality of satellite discs circumferentially distributed on the base and used for carrying workpieces to be processed, the base can rotate around the rotation center axis of the base with the satellite discs, and the satellite discs can rotate around the rotation center axis of the satellite discs;

[0008] The upper cover is provided with a first gas inlet structure and a second gas inlet structure. The first gas inlet structure extends into the reaction cavity and along the rotation center axis of the base by a preset distance, and can spray reaction gas into the surrounding reaction cavity. The second gas inlet structure is arranged around the first gas inlet structure and includes a plurality of carrier gas outlets which can independently inlet carrier gas and spray carrier gas. Any radius of the surface of the workpiece to be processed is divided into a plurality of continuous line segments. Each line segment forms a plurality of adjacent and non-overlapping concentric regions by rotating around the center of the workpiece to be processed. Each region corresponds to one or more carrier gas outlets. The carrier gas sprayed by the second gas inlet structure can press down at least part of the reaction gas sprayed by the first gas inlet structure. When the satellite disc rotates around the rotation center axis of the satellite disc, the film growth rate of the region of the workpiece to be processed corresponding to any carrier gas outlet can be changed by adjusting the carrier gas flow of the carrier gas outlet. Optionally, the second gas inlet structure includes a plurality of top gas outlets which are opened on the bottom surface of the upper cover, face the reaction cavity and are used to spray carrier gas. The top gas outlets are uniformly arranged on a plurality of concentric circles which are distributed outward along the rotation center axis of the base. Each carrier gas outlet includes the top gas outlets on one or more adjacent concentric circles.

[0009] Optionally, the number of top gas outlets on each concentric circle is the same, and the top gas outlets are distributed radially along a plurality of uniformly distributed radial directions.

[0010] Optionally, each carrier gas outlet includes at least two main channels which are symmetrically arranged about the rotation center axis of the base.

[0011] Optionally, the carrier gas outlet further includes a secondary channel and a communication cavity arranged between the main channel and the secondary channel. The main channel and the secondary channel respectively communicate with the communication cavity from the top and bottom directions.

[0012] Optionally, the second gas inlet structure is located above the workpiece to be processed. The vertical projection of the second gas inlet structure has a width equal to the radius of the workpiece to be processed, and the vertical projection covers the path from the edge of the workpiece to be processed to the center of the workpiece to be processed along the width direction of the vertical projection.

[0013] Optionally, the number of carrier gas outlets is the same as and one-to-one corresponds to the number of regions of the workpiece to be processed, and each carrier gas outlet is located directly above the corresponding region of the workpiece to be processed.

[0014] Optionally, the workpiece to be processed is divided into n regions in sequence from the edge to the center along the radial direction inward, wherein the i-th region is annular, the n-th region is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output parts include N and are arranged in sequence from the inside to the outside, the i-th carrier gas output part corresponds to the reaction gas of the m-th region, wherein 1≤I≤N, N=n, m=I, and N, m, and I are natural numbers.

[0015] Optionally, the workpiece to be processed is divided into n regions in sequence from the edge to the center along the radial direction inward, wherein the i-th region is annular, the n-th region is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output parts include 2M and are arranged in sequence from the inside to the outside, the P-th carrier gas output part and the 2M+1-P-th carrier gas output part correspond to the m-th region, wherein 1≤P≤2M, M=n, M, m, and P are natural numbers, when 1≤P≤M, m=P, and when M<P≤2M, m=2M+1-P.

[0016] Optionally, the workpiece to be processed is divided into n regions in sequence from the edge to the center along the radial direction inward, wherein the i-th region is annular, the n-th region is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output components include 2Q-1 and are arranged in sequence from the inside to the outside, the R-th carrier gas output component and the 2Q-R-th carrier gas output components correspond to the m-th region, wherein 1≤R≤2Q-1, Q=n, Q, m, and R are natural numbers, when 1≤R≤Q, m=R, and when Q<R≤2Q-1, m=2Q-R.

[0017] Optionally, the first air intake structure is in the shape of a multi-layer sleeve, and the first air intake structure includes multiple first air intake channels, and the first air intake channels include vertical channels and horizontal channels that are interconnected, wherein multiple vertical channels are coaxially arranged radially around the central axis of the first air intake structure, the vertical channels are penetrated in the upper cover, and the horizontal channels leave the upper cover and extend into the reaction chamber.

[0018] A second aspect of the present invention provides a multi-wafer planetary epitaxial device, comprising: a reaction chamber comprising any one of the epitaxial processes described in the first aspect of the present invention.

[0019] The beneficial effects of the present application: the second gas inlet structure of the reaction chamber of the present application can press down the carrier gas sprayed by the first gas inlet structure, at least partially disperse the flow of the reaction gas, and make the reaction on the wafer surface more uniform, so that the film growth rate of each region on the final wafer is more uniform. At the same time, the second gas inlet structure includes a plurality of carrier gas output members that can independently inlet gas, and each non-overlapping concentric region of the wafer corresponds to one or more carrier gas output members. By adjusting the carrier gas flow of any carrier gas output member, the film growth rate of the region of the workpiece corresponding to the carrier gas output member can be changed, the adjustment efficiency is high, and the film uniformity is also better. By using carrier gas to press down and disperse the reaction gas, on the one hand, the normal reaction of the preset proportion of the reaction gas will not be damaged; on the other hand, the amount of reaction gas can be saved, and the reaction gas will not be wasted. At the same time, by increasing the carrier gas output member above, the adjustment method can be simplified, and the difficulty of film uniformity adjustment can be greatly reduced. BRIEF DESCRIPTION OF DRAWINGS

[0020] The technical solutions and other beneficial effects of the present application will be apparent from the following detailed description of the specific embodiments of the present application, combined with the accompanying drawings.

[0021] Figure 1 FIG. 1 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0022] Figure 2 FIG. 2 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0023] Figure 3 FIG. 3 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0024] Figure 4 FIG. 4 is a structural schematic diagram of a gas inlet pipeline of an epitaxial device according to an embodiment of the present application;

[0025] Figure 5 FIG. 5 is a structural schematic diagram of a gas inlet pipeline of an epitaxial device according to an embodiment of the present application;

[0026] Figure 6 FIG. 6 is a structural schematic diagram of a gas inlet pipeline of an epitaxial device according to an embodiment of the present application;

[0027] Figure 7 FIG. 7 is a sectional view of a first gas inlet structure of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0028] Figure 8 FIG. 8 is a structural schematic diagram of a first gas inlet structure of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0029] Figure 9 A cross-sectional view of a first gas inlet structure of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0030] Figure 10 A structural schematic view of a first gas inlet structure of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0031] Figure 11 A structural schematic view of a wafer of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0032] Figure 12 A structural schematic view of a wafer of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0033] Figure 13 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application; Figure 1 A flow field simulation result of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0034] Figure 14 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0035] Figure 15 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0036] Figure 16 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0037] Figure 17 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0038] Figure 18 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0039] Figure 19 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0040] Figure 20 A structural schematic view of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0041] Wherein, the reference signs are: 100, reaction chamber; 1, upper cover; 2, reaction cavity; 21, side wall; 3, base; 31, satellite disc; 32, wafer; 321, outer ring area; 322, middle ring area; 323, inner ring area; 4, first air inlet structure; 41, first air outlet hole; 42, first air inlet channel; 421, 1st layer; 422, 2nd layer; 423, 3rd layer; 425, 5th layer; 426, 6th layer; 427, 7th layer; 45, partition; 46, vertical channel; 47, horizontal channel; 48, vertical section; 49, horizontal section; 5, second air inlet structure; 51, top air outlet hole; 52, carrier gas output; 521, inner carrier gas output; 522, middle carrier gas output; 523, outer carrier gas output; 53, main channel; 531, first main channel; 532, second main channel; 533, third main channel; 534, fourth main channel; 535, fifth main channel; 536, sixth main channel; 54, secondary channel; 55, communication cavity; 56, vertical projection; 6, air inlet pipeline; 61, first branch pipe; 62, second branch pipe; 63, third branch pipe; 7, rotating mechanism; 9, heating device; 10, base. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application.

[0043] In order to better understand the technical content of the present application, specific embodiments are described below with reference to the accompanying drawings.

[0044] Aspects of the present application are described in the detailed description in reference to the drawings, in which many illustrative embodiments are shown. The embodiments of the present application are not necessarily intended to include all aspects of the present application. It should be understood that various concepts and embodiments introduced above, and those described in more detail below, can be implemented in any of numerous ways, as the concepts and embodiments disclosed herein are not limited to any one implementation. Additionally, some aspects of the present application can be utilized independently, or in any suitable combination with other aspects of the present application.

[0045] It should be noted that when an element is referred to as being "connected to" or "set on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0046] In addition, the terms "first", "second", "third", etc. are used herein only to describe different instances, and are not used to indicate or imply relative importance or a number of indications of the technical features indicated. Therefore, the features defined as "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited. The meaning of "a plurality of" is one or more, unless otherwise explicitly and specifically limited.

[0047] In the description of the present application, it should be understood that the orientations or positional relationships indicated by the terms "center", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and are not intended to indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0048] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0049] Throughout the specification, reference to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Therefore, the phrases "in one embodiment", "in some embodiments", or "in some embodiments" appearing in various places throughout the specification are not all referring to the same embodiment. Furthermore, particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0050] The "multi-piece planetary" of the present application refers to each base 3 supporting at least 2 or more satellite discs 31, such as 2, 3, 4, etc., each satellite disc 31 carrying one wafer, and the base 3 can be a planetary base, i.e. the satellite discs 31 are distributed in a circle around the center of the base 3. In the wafer epitaxial process, the satellite discs 31 rotate around the center axis of the base 3, and each satellite disc 31 rotates around its own center axis under the action of fluid.

[0051] In the reaction chambers of some epitaxial equipment equipped with a horizontal gas outlet structure, the concentration of the horizontally ejected reaction gas gradually decreases along the forward direction with the continuous chemical reaction, so that the film growth rate of the wafer is the highest on the side closest to the horizontal gas outlet structure, and the farther away from the horizontal gas outlet structure, the lower the film growth rate of the wafer. At the same time, since the satellite disk 31 is constantly rotating with the wafer, the area on the wafer closest to the horizontal gas outlet structure will theoretically be repeatedly deposited with more reactants after the reaction of the reaction gas, and the area far away from the horizontal gas outlet structure will be repeatedly deposited with fewer reactants or even no repeated deposition, making the film growth on various parts of the wafer very uneven.

[0052] See also Figure 1 、 Figure 2 、 Figure 3 To address the above-mentioned issues, embodiments of the present application provide a multi-wafer planetary epitaxial device, which includes a reaction chamber 100 for an epitaxial process. In some embodiments, the epitaxial process reaction chamber 100 includes an upper cover 1, a reaction chamber 2, a base 3, and a plurality of satellite disks 31, wherein the reaction chamber 2 defines a process environment space, the upper cover 1 is disposed on the top of the reaction chamber 2, and the base 3 is rotatably disposed in the reaction chamber 2 and spaced parallel to the upper cover 1. Furthermore, the base 3 can rotate around the rotation center axis c of the base 3. Multiple satellite disks 31 are circumferentially distributed on the base 3. The satellite disks 31 are used to carry workpieces to be processed. The satellite disks 31 can revolve around the rotation center axis c of the base 3 and can also rotate around the rotation center axis d of the satellite disks 31.

[0053] The workpiece to be processed in this application refers to any substrate on which a film forming process is performed during the manufacturing process. The substrate includes a wafer 32 or is described as a wafer, substrate, epitaxial wafer, base plate, etc. The materials on which the film forming process can be performed include materials such as silicon, silicon carbide, silicon oxide, strained silicon, carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, gallium nitride, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the specific application. The substrate includes but is not limited to the wafer 32. In the following embodiments, the workpiece to be processed is taken as an example of the wafer 32. It can be understood that the workpiece to be processed has a circular or nearly circular surface. The workpiece to be processed can be other substrates such as wafers and epitaxial wafers and is not limited. In the reaction chamber 2 of the multi-planetary epitaxial device, the semiconductor wafer 32 on which the thin film layer is to be grown is placed on the rapidly rotating satellite disk 31 so that its surface is evenly exposed to the atmosphere in the reaction chamber 2 for semiconductor material deposition.

[0054] As the reaction gas approaches the rotating susceptor 3 and / or satellite disk 31, the temperature of the reaction gas increases significantly, and the viscous drag of the rotating susceptor 3 and / or satellite disk 31 causes the gas to rotate about the axis of the susceptor 3 and / or satellite disk 31, so that the gas flows about the axis and outwardly towards the periphery of the susceptor 3 and / or satellite disk 31 in a boundary region near the surface of the susceptor 3 and / or satellite disk 31. Depending on the reaction gas used in the process, pyrolysis can occur in or near the boundary region at an intermediate temperature between the temperature at the gas injection location and the temperature of the susceptor 3 and / or satellite disk 31. This pyrolysis facilitates the interaction of the reaction gas with the growth of the crystal structure. The non-deposited gas continues to flow to the periphery and over the outer edge of the susceptor 3, which can be removed from the reaction chamber 2 by one or more exhaust ports (not shown) disposed below the susceptor 3.

[0055] Please refer to Figure 1 , Figure 2 , Figure 3The base 3 of the bottom of the reaction cavity 2 is a plate-shaped body, and the diameter thereof can be selected to be between 500 mm and 2000 mm, and the material thereof can be selected to be made of graphite or other high-temperature-resistant materials. In an embodiment, the center of the base 3 is provided with a rotating mechanism 7, which can drive the base 3 to rotate. In an embodiment, a plurality of satellite plates 31 are arranged around the central axis of rotation of the base 3, and the satellite plates 31 are used to carry workpieces to be processed, such as wafers 32, and the satellite plates 31 can be made of quartz or graphite or other high-temperature-resistant materials. In some embodiments, there are 6, 7, 8, 9 or other numbers of satellite plates 31 distributed around the center of the base 3 and equidistant from the center, and the satellite plates 31 are uniformly distributed in a circle, and the distance from the center of the base 3 to the center of the satellite plates 31 can be selected to be 100 mm-800 mm. It can be understood that the uniform distribution of the present application generally refers to equidistant distribution. The satellite plates 31 are driven to rotate by air flow. In the present embodiment, the satellite plates 31 are configured as disc-shaped, and in other embodiments, the satellite plates 31 can be square, hexagonal or other shapes without limitation. In an embodiment, the base 3 rotates around the central axis c of the base 3, and the satellite plates 31 can rotate around the central axis d of the satellite plates 31 and revolve around the central axis c of the base 3. The rotation speed of the base 3 can be selected to be 20-300 rpm, and the rotation speed of the satellite plates 31 can be selected to be 120-860 rpm. It can be understood that the rotation mode and speed of the base 3 and the satellite plates 31 can be changed as needed and are not limited. The base 3 provided in the present embodiment is provided with air grooves (not shown), and the satellite plates 31 are arranged opposite to the air grooves, which can use the fluid flowing into the air grooves of the base 3 to float, support, position and / or rotate the satellite plates 31. In some embodiments, the back of the satellite plates 31 is provided with flow channels for fluid flow. By controlling the characteristics of the fluid delivered to the surface of the satellite plates 31 from the air grooves, such as the air flow of the fluid from the air grooves, the floating height of the satellite plates 31 can be changed. The floating, supporting, positioning and / or rotating of the satellite plates 31 are caused by the friction of the fluid flowing over the surface of the satellite plates 31 and the atomic kinetic energy transfer. The satellite plates 31 are floated together with the wafers under the action of the air flow and rotate around the central axis d of the satellite plates 31, and the base 3 can drive the satellite plates 31 to rotate together when the base 3 rotates.

[0056] The upper cover 1 is made of quartz or other high-temperature-resistant materials, and in an embodiment, the outer diameter of the upper cover 1 is substantially the same as the outer diameter of the base 3. In an embodiment, the outer diameter of the upper cover 1 is 500 mm-2000 mm. The distance between the upper cover 1 and the base 3 extending in parallel is about 80 mm-400 mm, and further, 100 mm-200 mm. It can be understood that the distance can be adjusted as needed and is not limited.

[0057] In an embodiment, please refer to Figure 1 ,Figure 3 The reaction chamber 100 comprises a sidewall 21 below the upper cover 1, and the sidewall 21 and the upper cover 1 jointly enclose the reaction cavity 2. The sidewall 21 can be made of quartz or other high-temperature-resistant materials. In an embodiment, the bottom of the susceptor 3 is further provided with a heating device 9, which can be an electric resistance heating device, an electromagnetic induction heating device, an RFC heating device, or the like. The heating device 9 is used to heat the satellite disk 31, the workpiece to be processed, and the susceptor 3. In some embodiments, the reaction chamber 100 is further provided with a base 10, which is used to seal the reaction cavity 2 from below and to support the devices in the reaction cavity 2.

[0058] The upper cover 1 is provided with a first gas inlet structure 4 and a second gas inlet structure 5. The first gas inlet structure 4 is used to introduce a reaction gas into the reaction cavity 2. It should be noted that in the field of semiconductor epitaxial growth technology, the flow of the introduced reaction gas is usually not large. In order to avoid pre-reaction and to send the reaction gas to the designated reaction area, the reaction gas is usually introduced together with a carrier gas. The introduction of the reaction gas in this application refers to the introduction of the reaction gas, which can also include other gases such as carrier gas, and is not limited to the introduction of the reaction gas excluding the carrier gas. The second gas inlet structure 5 is used to introduce a carrier gas into the reaction cavity 2. The carrier gas introduced by the second gas inlet structure 5 into the reaction cavity 2 can push down at least part of the reaction gas introduced by the first gas inlet structure 4 into the reaction cavity 2 and make the gas flow introduced by the first gas inlet structure 4 into the reaction cavity 2 more dispersedly blow to the satellite disk 31. When the satellite disk 31 rotates around the center axis of rotation of the satellite disk 31, the film growth rate of the area of the workpiece corresponding to any of the carrier gas output members 52 can be changed by adjusting the flow of the carrier gas of the carrier gas output member 52.

[0059] The pushing down refers to further moving downwardly deviating from the original movement track, i.e., the movement track after the pushing down is below the movement track before the pushing down. The pushing down is not limited to vertical pushing down, but also includes pushing down to the oblique downward, and the gas flow is impacted by the vertical downward or oblique downward gas flow when advancing to the jet direction, so that the gas flow blows to the satellite disk 31 in a parabolic shape and compared with the gas flow naturally falling in a horizontal jet, the gas flow is scattered to make the gas flow field more uniform. In some embodiments, the ratio of the carrier gas and the reaction gas in the mixed gas jetted by the first gas inlet structure 4 can be set as needed, for example, the flow of the reaction gas can be 1% of the flow of the carrier gas. Optionally, the carrier gas is 40 SLM, and the reaction gas is 0.4 SLM, which is not limited.

[0060] The reaction gas includes a first precursor gas and a second precursor gas. The first precursor gas is a gas containing a group V element, such as TCS (Trichlorosilane), a chemical substance with a chemical formula of SiHCl3, or a gas containing a group VI element. The second precursor gas is a gas containing a group III element, such as ethylene gas, or a gas containing a group II element. It can be understood that the first precursor gas and the second precursor gas can be interchanged. The carrier gas is a gas that does not react with the precursor gas, such as nitrogen or hydrogen.

[0061] The first gas inlet structure 4 and the second gas inlet structure 5 are respectively connected to a gas inlet pipeline 6. The structure of the gas inlet pipeline 6 includes at least one of the following structures: Figure 4 As shown in FIG. 2, the gas inlet pipeline 6 only includes a first branch pipe 61 for introducing the carrier gas. Figure 5 As shown in FIG. 3, the gas inlet pipeline 6 includes a first branch pipe 61 and a second branch pipe 62 connected to each other, wherein the first branch pipe 61 is used to introduce the carrier gas, and the second branch pipe 62 is used to introduce the reaction gas, which can be one of the first precursor gas and the second precursor gas. Figure 6 As shown in FIG. 4, the gas inlet pipeline 6 includes a first branch pipe 61, a second branch pipe 62, and a third branch pipe 63 connected to the first branch pipe 61, wherein the first branch pipe 61 is used to introduce the carrier gas, the second branch pipe 62 is used to introduce one of the first precursor gas and the second precursor gas, and the third branch pipe 63 is used to introduce the doping gas. It should be noted that the first branch pipe 61, the second branch pipe 62, and the third branch pipe 63 are respectively provided with a flow controller (not shown), which can be a mass flow controller (MFC), and the flow controller is connected to a controller to control the flow rate of the carrier gas, the reaction gas (at least one of the first precursor gas and the second precursor gas), and the doping gas according to the needs. The gas inlet pipeline 6 of the above three structures can be selected according to the needs to be connected to the first gas inlet structure 4 and the second gas inlet structure 5. For example, the gas inlet pipeline 6 of structure three is connected to the first gas inlet structure 4, and the gas inlet pipeline 6 of structure one is connected to the second gas inlet structure 5.

[0062] In some embodiments, the doping gas can be any one of NO, N2O, N2, and the like, and the flow rate of the doping gas can be set according to the needs, for example, it can be 0.5% of the flow rate of the carrier gas. When the carrier gas is 40 SLM, the doping gas is 0.2 SLM, and is not limited.

[0063] It can be understood that when the doping source is not needed, the carrier gas can be directly introduced into the reaction gas or the reaction gas can be directly introduced into the carrier gas. The Group III and Group V compounds or the Group II and Group VI compounds transported by the carrier gas are chemically reacted in the reaction chamber 2 under high temperature environment. At this time, the gas inlet pipeline 6 of the second gas inlet structure 5 is selected to be in communication with the first gas inlet structure 4, and the products of the chemical reaction are deposited on the wafer 32 placed on the satellite disc 31 to form a thin film. The gas flow introduced into the reaction chamber 2 by the second gas inlet structure 5 can press down and blow at least part of the gas flow introduced into the reaction chamber 2 by the first gas inlet structure 4 to the satellite disc 31.

[0064] Please refer to Figure 1 The upper cover 1 is provided with a through hole penetrating through the upper and lower surfaces of the upper cover 1 for the first gas inlet structure 4 to pass through. The first gas inlet structure 4 is arranged in the center of the upper cover 1 and extends into the reaction chamber 2. Specifically, the first gas inlet structure 4 extends into the reaction chamber 2 along the central axis of rotation of the susceptor 3 by a predetermined distance, and the first gas inlet structure 4 can introduce gas into the surrounding reaction chamber 2. In an embodiment, the predetermined distance, i.e. the height, of the first gas inlet structure 4 extending into the reaction chamber 2 can be selected to be 20-200 mm, and the distance between the bottom of the first gas inlet structure 4 and the upper surface of the susceptor 3 can be selected to be 2-80 mm. It can be understood that in other embodiments, the height of the first gas inlet structure 4 extending into the reaction chamber 2 and the distance between the bottom of the first gas inlet structure 4 and the upper surface of the susceptor 3 can also be other values.

[0065] Please refer to Figure 7 The first gas inlet structure 4 includes a first gas outlet hole 41 provided on the bottom surface of the upper cover 1 and facing the reaction chamber 2, and the gas flow flows into the reaction chamber 2 from the first gas outlet hole 41. In some embodiments, the first gas inlet structure 4 includes a plurality of first gas inlet channels 42, and each first gas inlet channel 42 is provided with a plurality of first gas outlet holes 41.

[0066] One first gas inlet channel 42 of the first gas inlet structure 4 is individually communicated with one gas inlet pipeline 6, and all the first gas inlet channels 42 are communicated with the gas inlet pipelines 6. One carrier gas output member 52 of the second gas inlet structure 5 is individually communicated with one gas inlet pipeline 6, and all the carrier gas output members 52 are communicated with the gas inlet pipelines 6. In this way, the gas flow in each first gas inlet channel 42 / carrier gas output member 52 can be controlled by the controller, that is, the independent gas inlet of each carrier gas output member 52 can be realized. Further, the gas flow of different gases of the mixed gas can be controlled to change the volume ratio of different gases. The gas can be respectively sent into the first gas inlet structure 4 and the second gas inlet structure 5 through the gas inlet pipelines 6. In other embodiments, the planetary epitaxial equipment further includes a gas source, and the gas can be introduced into the reaction chamber 2 by sending the gas source into the gas inlet pipeline 6.

[0067] In an embodiment, please refer to Figure 7 ,Figure 8 The first gas inlet structure 4 is in a multi-layer sleeve shape, including an upper vertical section 48 and a lower horizontal section 49, wherein the vertical section 48 penetrates the upper cover 1, and the horizontal section 49 is arranged in the reaction cavity 2, and in some embodiments, the horizontal section 49 is spaced apart from the upper cover 1 by 0-10 mm, when the horizontal section 49 is close to the upper cover 1, the gas sprayed from the horizontal section 49 can blow the upper cover 1 from the horizontal direction, preventing the particles from falling. The first gas inlet structure 4 includes a plurality of first gas inlet channels 42, which include vertical channels 46 and horizontal channels 47 that are in communication with each other, wherein a plurality of vertical channels 46 are coaxially arranged in the radial direction around the central axis of the first gas inlet structure 4, the vertical channels 46 are arranged in the upper cover 1, and the horizontal channels 47 are arranged away from the upper cover 1 and extend into the reaction cavity 2, the gas first flows into the vertical channels 46, and after colliding with the channel wall, the gas turns and flows out along the horizontal channels 47. After the gas is introduced into the vertical channels 46 of the first gas inlet structure 4, the gas is buffered and then horizontally discharged, so that the mixture is uniform in the horizontal direction, and such gas flow is more uniform, and the film forming effect is better.

[0068] In one embodiment, the outer surface of the vertical section 48 and the outer surface of the horizontal section 49 are both in a cylindrical shape, and the diameter of the former is smaller than the diameter of the latter.

[0069] In one embodiment, in addition to the centralmost vertical channel 46 being a cylindrical channel, the other vertical channels are all in the shape of coaxially arranged annular rings, and each vertical channel 46 is in communication with a gas inlet pipeline 6, so that the gas flow of each vertical channel 46 can be individually controlled.

[0070] In one embodiment, please refer to Figure 5 、 Figure 6, the horizontal section 49 is stacked from bottom to top with the first layer 421, the second layer 422, the third layer 423, the fourth layer 424, the fifth layer 425, the sixth layer 426, and the seventh layer 427. Each first gas inlet channel 42 includes a vertical channel 46 located in the vertical section 48 and a plurality of horizontal channels 47 located in the horizontal section 49 and communicating with the vertical channel 46, the plurality of horizontal channels 47 are located in the same layer of the horizontal section 49, the horizontal channels 47 in the same layer are distributed along the radial direction of the first gas inlet structure 4 and communicate with each other through the bottom of the same vertical channel 46. Each horizontal channel 47 is provided with a plurality of first gas outlet holes 41 distributed equidistantly on the outer circumferential surface of the horizontal section 49, the gas flowing into the vertical channel 46 of the first gas inlet channel 42 finally flows out from different first gas outlet holes 41 in the same layer of the horizontal section 49. The plurality of first gas outlet holes 41 of the same first gas inlet channel 42 are uniformly distributed along the outer circumferential surface of the first gas inlet structure 4. In some embodiments, the first gas outlet holes 41 of different first gas inlet channels 42 are the same in number and vertically aligned, and are equidistantly distributed along the outer surface of the first gas inlet structure 4. It can be understood that the horizontal channels 47 of different first gas inlet channels 42 are located in different layers, so that the gas can flow out from the first gas outlet holes 41 in different layers, for example, ethylene flows out from the first layer 421 to the third layer 423, and TCS flows out from the third layer 423 to the sixth layer 426. In an embodiment, different first gas inlet channels 42 are separated from each other by the partition plate 45, and further, the vertical channels 46 and the vertical channels 46, the horizontal channels 47 and the horizontal channels 47, and the vertical channels 46 and the horizontal channels 47 are all separated by the partition plate 45. In an embodiment, the first gas inlet channels 42 extending into the reaction chamber 2 are horizontally arranged, so that the gas flowing through the first gas inlet channels 42 flows into the reaction chamber 2 in a horizontal direction. It can be understood that each horizontal channel 47 is provided with a plurality of first gas outlet holes 41 arranged equidistantly along the circumference of the first gas inlet structure 4, and the horizontal channels 47 of the horizontal section 49 are arranged in a central radial manner and separated from each other by the partition plate 45. Optionally, the gas flow rate of each first gas inlet channel 42 is 20-50 SLM. In other embodiments, the gas flow rate of the first gas inlet channel 42 is 5-20 SLM or 50 SLM-100 SLM, which is not limited.

[0071] Please refer to Figure 2 、 Figure 9 、 Figure 10The second gas inlet structure 5 is arranged on the upper cover 1 and surrounds the central axis of the first gas inlet structure 4 and is spaced apart from the first gas inlet structure 4. In an embodiment, the second gas inlet structure 5 is annularly arranged on the upper cover 1. Optionally, the first gas inlet structure 4 and the second gas inlet structure 5 are spaced apart by 50-500 mm in the horizontal direction, further optionally 60-200 mm, and more further optionally 80-120 mm.

[0072] In some embodiments, the number of the top gas outlet holes 51 on each circle is the same, and the top gas outlet holes 51 are radially distributed along the evenly distributed multiple circles.

[0073] In some embodiments, the distance between the top gas outlet holes 51 on adjacent circles along the same radial direction is equal.

[0074] The second gas inlet structure 5 comprises multiple independent gas output members 52, each of which comprises the top gas outlet holes 51 on one or more adjacent circles. One or more gas output members 52 correspond to one region on the workpiece, and the film growth rate of the region on the workpiece corresponding to the gas output member 52 can be adjusted by changing the gas flow of the gas output member 52. It should be noted that one or more gas output members 52 correspond to one region on the workpiece means that the gas flow sprayed by each gas output member 52 can affect the film growth rate of a specified region on the workpiece, and in some embodiments, it can be understood that the gas flow sprayed can cover the region on the workpiece. All regions on the workpiece have corresponding gas output members 52, and the film growth rate of a specified region can be affected by adjusting the gas flow of any gas output member 52.

[0075] In an embodiment, the second gas inlet structure 5 comprises multiple gas output members 52, each of which comprises a circle of top gas outlet holes 51, and gas can flow into the reaction chamber 2 through the top gas outlet holes 51.

[0076] In some embodiments, each gas output member 52 comprises 2 or 3 adjacent circles of top gas outlet holes 51, and the number of circles of top gas outlet holes 51 can be set as needed and is not limited.

[0077] In one embodiment, the top gas outlet hole 51 is at an angle with the first gas outlet hole 41, which can be 30°-150°, further can be 45°, 60°, 90°, 120°, 130°. The carrier gas vertically sprayed by the second gas inlet structure 5 can push down the reaction gas introduced into the reaction cavity 2 by the first gas inlet structure 4 and make the gas flow introduced into the reaction cavity 2 by the first gas inlet structure 4 blow to the satellite disk 31 in a parabolic shape.

[0078] In one embodiment, the first gas outlet hole 41 is the outlet of the first gas inlet channel 42, and the first gas outlet hole 41 of the first gas inlet structure 4 is at an angle of 45°-90° with the vertical direction, further can be 45°, 60°, 90°.

[0079] In one embodiment, the plurality of carrier gas output members 52 are arranged radially around the center of the upper cover 1. In one embodiment, the plurality of carrier gas output members 52 are arranged in a central-to-peripheral radiation manner. In one embodiment, the second gas inlet structure 5 includes a plurality of carrier gas output members arranged in the radial direction of the upper cover 1. By densely blowing gas through the plurality of carrier gas output members 52, the situation of uneven gas flow distribution in the reaction cavity 2 can be effectively prevented. The upper cover 1 densely covers the carrier gas output members 52, which can prevent the formation of particulate matter on the upper cover 1 and falling on the wafer 32.

[0080] In one embodiment, the top gas outlet hole 51 is a spray port, the shape of the spray port is a hole or a gap, the number of the spray port is 10-500, and the spray port is distributed in a circumferential or array manner.

[0081] In some embodiments, the first gas outlet hole 41 is a circular hole or a square hole, the hole diameter is 0.5mm-20mm, further can be 1mm-5mm, and further can be 2mm. It can be understood that the hole diameter of the first gas outlet hole 41 can also be selected as other values. The hole diameter of the top gas outlet hole 51 is 0.5mm-10mm, further can be 1mm-3mm, and further can be 2mm. The hole diameter of the top gas outlet hole 51 can also be selected as other values.

[0082] Please refer to Figure 9 , Figure 10The second gas inlet structure 5 includes multiple independent carrier gas output elements 52. Each carrier gas output element 52 includes a primary channel 53 and a secondary channel 54. The primary channel 53 and the secondary channel 54 are fluidically connected. Both the primary channel 53 and the secondary channel 54 are disposed in the upper cover 1. Airflow first enters the primary channel 53, then flows into the multiple secondary channels 54, and finally flows from the secondary channels 54 into the reaction chamber 2. Specifically, the multiple primary channels 53 are arranged radially outward from the center of the upper cover 1. For example, from the inside to the outside, they are radially divided into a first primary channel 531, a second primary channel 532, and a third primary channel 533. A fourth primary channel 534, a fifth primary channel 535, and a sixth primary channel 536 are disposed in opposite radial directions. In this embodiment, the second air inlet structure 5 includes an inner carrier gas output element 521, an intermediate carrier gas output element 522, and an outer carrier gas output element 523. The inner carrier gas output element 521 includes a first main channel 531 and a fourth main channel 534, the intermediate carrier gas output element 522 includes a second main channel 532 and a fifth main channel 535, and the outer carrier gas output element 523 includes a third main channel 533 and a sixth main channel 536. The first main channel 531 and the fourth main channel 534 are symmetrical about the rotational axis of the base 3, the second main channel 532 and the fifth main channel 535 are symmetrical about the rotational axis of the base 3, and the third main channel 533 and the sixth main channel 536 are symmetrical about the rotational axis of the base 3. This arrangement allows the airflow to flow more evenly through the primary channel before entering the secondary channel 54, ensuring consistent airflow at all locations.

[0083] See also Figure 2 、 Figure 11, the surface of the workpiece is divided into a plurality of continuous line segments, each of which forms a plurality of adjacent non-overlapping concentric regions when rotated around the center of the workpiece, and each of the regions corresponds to one or more of the carrier gas output members 52; in this embodiment, the workpiece is a wafer 32, and the surface of the wafer 32 is divided into an outer ring region 321, a middle ring region 322, and an inner ring region 323 from outside to inside. The second gas inlet structure 5 includes three carrier gas output members 52 from inside to outside, i.e., an inner side carrier gas output member 521 corresponding to the outer ring region 321, a middle carrier gas output member 522 corresponding to the middle ring region 322, and an outer side carrier gas output member 523 corresponding to the inner ring region 323. When the gas flow of the inner side carrier gas output member 521 is increased, the film growth rate of the outer ring region 321 is reduced; when the gas flow of the middle carrier gas output member 522 is increased, the film growth rate of the middle ring region 322 is reduced; and when the gas flow of the outer side carrier gas output member 523 is increased, the film growth rate of the inner ring region 323 is reduced. Similarly, when the gas flow of the inner side carrier gas output member 521, the middle carrier gas output member 522, or the outer side carrier gas output member 523 is reduced, the film growth rate of the surface region of the workpiece corresponding to the carrier gas output member is increased, respectively. The carrier gas sprayed by the second gas inlet structure 5 can press down at least part of the reaction gas sprayed by the first gas inlet structure 4. When the satellite disk 31 rotates around the rotation center axis of the satellite disk 31, the film growth rate of the region of the workpiece corresponding to any of the carrier gas output members 52 can be reduced by increasing the gas flow of the carrier gas output member 52. The film growth rate of the region of the workpiece corresponding to any of the carrier gas output members 52 can be increased by reducing the gas flow of the carrier gas output member 52. It can be understood that the lengths of the plurality of continuous line segments are not limited, and as an example, the radius of 9 cm can be divided into three line segments of 3 cm each. As another example, please refer to Figure 12 , the radius of 11 cm can be divided into a 2 cm line segment, a 2 cm line segment, a 3 cm line segment, and a 4 cm line segment from inside to outside. The coverage area of the gas flow sprayed by the corresponding carrier gas output member 52 also needs to be adjusted, so that the gas flow sprayed by each carrier gas output member 52 can cover the concentric region formed by rotating one line segment around the center of the workpiece.

[0084] In one embodiment, the main channels 53 are arranged in a ring, and each carrier gas output member 52 includes at least two main channels 53, which are symmetrically arranged about the rotation center axis of the base 3.

[0085] Please refer to Figure 9 , Figure 10The plurality of main channels 53 are evenly distributed on concentric circles around the central axis of rotation of the base 3, i.e. the plurality of main channels 53 are distributed at different radii, for example, 4 first main channels 531 are arranged along the circumference at a radius of 100 mm, 4 second main channels 532 are arranged along the circumference at a radius of 200 mm, and 4 third main channels 533 are arranged along the circumference at a radius of 300 mm. It can be understood that the radius and the number of main channels 53 at the same radius are not limited. Further, the main channels 53 are connected with the secondary channels 54 below, and further, each main channel 53 is connected with a plurality of secondary channels 54. In some embodiments, a communication cavity 55 is arranged between the main channels 53 and the secondary channels 54, and the main channels 53 and the secondary channels 54 respectively communicate with the communication cavity 55 from the upper and lower directions. Optionally, the plurality of main channels 53 can be distributed equidistantly along the radial direction, and the interval is 10-100 mm. It can be understood that each carrier gas output 52 is separately connected to an air inlet pipeline 6 (not shown), and the air inlet pipeline 6 is connected with an external gas source. The air inlet pipeline 6 includes a flow controller electrically connected with a controller, and the controller controls the air inlet of each carrier gas output 52 separately, so that the gas flow field of the specified area can be adjusted, and the uniformity of the film thickness is improved. It can be understood that in some embodiments, the boundary of the second air inlet structure 5 is determined by the secondary channels 54, and the circumscribed circle of the outermost circle of the secondary channels 54 is the boundary of the second air inlet structure 5, i.e. the outer boundary of the vertical projection 56 of the second air inlet structure 5. In some embodiments, the boundary of the second air inlet structure 5 is determined by the structure in which the top gas outlet hole 51 is arranged, and the outermost contour of the structure in which the top gas outlet hole 51 is arranged is the boundary of the second air inlet structure 5.

[0086] The communication cavity 55 is annularly arranged, and in some embodiments, a plurality of secondary channels 54 are arranged below the communication cavity 55, and each circle of secondary channels 54 is arranged along a plurality of uniformly distributed radial directions and radiates outwardly. In this way, the gas flow of the second air inlet structure 5 is more dispersed, and the uniformity of the reaction gas is better by pressing the reaction gas downwardly. In some embodiments, one circle of secondary channels 54 is arranged below the communication cavity 55. The one circle of secondary channels 54 is also uniformly distributed, and by arranging the one circle of secondary channels 54, the carrier gas can be blown downwardly more concentratedly, the downward pressing is more efficient, and the adjustment effect is more obvious.

[0087] In one embodiment, the secondary channels 54 are distributed in a plurality of regions, please refer to Figure 9 , Figure 10The secondary channels 54 are distributed in three regions, and each region is an annular region. A plurality of secondary channels 54 are distributed in each annular region, and the radial distance between adjacent secondary channels 54 in each annular region is smaller than the radial distance between adjacent secondary channels 54 in different annular regions. In this way, when the gas flow of the carrier gas output 52 is adjusted, the mutual influence of the gas flow in different annular regions can be minimized, so that the gas flow field of the desired adjustment region can be effectively adjusted, thereby ensuring the uniformity of the overall region gas flow field. It can be understood that the radial distance can be selected to be 1-20 mm, and the annular region can be 2, 4, 5, etc. and is not limited.

[0088] The gas outlet of the secondary channel 54 is the top gas outlet hole 51, and the directions of the main channel 53 and the secondary channel 54 can be changed as needed. In the embodiment, the directions are vertical.

[0089] In one embodiment, the second gas inlet structure 5 is arranged obliquely above the satellite disc 31, that is, in the horizontal direction, the second gas inlet structure 5 is arranged between the first gas inlet structure 4 and the satellite disc 31, so that the gas flow angle can be better controlled, and the gas flow can be better blown to the wafer 32.

[0090] In some embodiments, please refer to Figure 3 The first gas inlet structure 4 is arranged at the center of the reaction chamber 2, and the satellite disc 31 is arranged around the first gas inlet structure 4. The gas flow of the first gas inlet structure 4 is horizontally injected towards the satellite disc 31. A gap is left between the susceptor 3 and the side wall 21, which serves as an exhaust channel. The exhaust channel is in communication with an exhaust pump, and the exhaust pump is electrically connected to the controller. The exhaust pump can extract part of the reaction products and unreacted gas from the exhaust channel together from the reaction chamber 2.

[0091] In one embodiment, the gas flow rate / flow of the first gas inlet structure 4 and the second gas inlet structure 5 can be adjusted, so that the shape of the parabola can be changed, so that the reaction gas can be better deposited on the surface of the wafer 32 after reaction. It should be noted that the first gas inlet structure 4 and the second gas inlet structure 5 each have the ability to independently control the internal flow. Although not shown, a plurality of flow controllers are arranged in fluid communication with the first gas inlet channel 42 and the carrier gas output 52 to independently adjust the flow and flow rate in the corresponding gas inlet channel. It can be understood that a gas pipeline can be arranged in communication with the gas inlet of each gas inlet channel to deliver gas into each gas inlet channel, and the gas is introduced into the reaction chamber 2 through the gas outlet of the gas inlet channel.

[0092] Please refer to Figure 3 , Figure 13, the gas flowed into the reaction cavity 2 by the first gas inlet structure 4 is divided into two segments of trajectories, the first segment of gas flow advances along the ejection direction in a straight trajectory slightly downward, and the second segment is the gas flow being pressed downward and dispersed after meeting the carrier gas flowed into the reaction cavity 2 by the second gas inlet structure 5, due to the impact force of the pressing, the trajectory of the second segment is more downward than that of the first segment, generally in a parabolic shape, and is dispersed into smaller gas flow, so that the thin film deposition uniformity is better. But the dispersion will also affect the deposition of reactants on the wafer surface, and will reduce the thin film growth rate. Since the concentration of the reaction gas ejected by the first gas inlet structure 4 gradually decreases along the forward direction with continuous chemical reaction, the thin film growth rate of the wafer on the side closest to the first gas inlet structure 4 is the highest, and the farther away from the first gas inlet structure 4, the lower the thin film growth rate of the wafer. At the same time, since the satellite disc 31 rotates with the wafer, the area of the wafer closest to the first gas inlet structure 4 will be repeatedly deposited with more reactants after reaction of the reaction gas, and the area away from the first gas inlet structure 4 will be repeatedly deposited with less reactants or even no reactants, so that the thin film growth on the wafer is very uneven. The second gas inlet structure 5 provided by the reaction chamber 100 of the present application can press the reaction gas ejected by the first gas inlet structure 4, at least partially disperse the gas flow of the reaction gas, and make the reactants flowing to the wafer surface more uniform, so that the thin film growth rate of each area on the wafer is more uniform. By using carrier gas to press and disperse the reaction gas, on the one hand, the normal reaction of the reaction gas in the preset proportion will not be damaged; on the other hand, if the uniformity is adjusted by the reaction gas, it involves a series of chemical reactions and control of the flow field, and the adjustment method is very complex. By using carrier gas to press, compared with the scheme of adjusting by reaction gas, the amount of reaction gas can be saved, and the reaction gas will not be wasted. At the same time, by increasing the gas output member 52 above, the adjustment method can be simplified, and the difficulty of thin film uniformity adjustment can be greatly reduced.

[0093] It should be noted that although the carrier gas of the second gas inlet structure 5 can press the reaction gas ejected by the first gas inlet structure 4, part of the reaction gas will flow through the gap of the carrier gas ejected by the second gas inlet structure 5, that is, this part of the gas flow is not impacted by the downward gas flow, but is naturally reacted and deposited, or is directly extracted out of the reaction cavity 2 without reaction.

[0094] Please refer to Figure 2 , Figure 10In one embodiment, the secondary channel 54 is the top gas outlet hole 51, the central axis of the top gas outlet hole 51 is coplanar with the central axis of the first gas outlet hole 41, and the included angle of the two central axes after intersection is a, so that the carrier gas b sprayed from the top gas outlet hole 51 can press down and blow the reaction gas a sprayed from the first gas outlet hole 41 to the workpiece to be processed. By making the central axis of the top gas outlet hole 51 coplanar with the central axis of the first gas outlet hole 41, and the included angle of the two central axes after intersection is a, 30°≤a≤150°, the gas flow sprayed from the second gas inlet structure 5 can be more accurately blown at the center position of the gas flow sprayed from the first gas inlet structure 4, the efficiency is higher, and the pressing down effect is better.

[0095] When the gas is sprayed from the first gas inlet structure 4 or the second gas inlet structure 5, it will spread to all directions along the forward direction, and as the spraying distance of the gas increases, a gas flow with a wider and wider cross section will be formed, the edges of the gas flow in the same direction will contact each other, and finally a continuous gas curtain will be formed. At this time, the central axis of the top gas outlet hole 51 does not need to be coplanar with the central axis of the first gas outlet hole 41, and the gas flow b sprayed from the second gas inlet structure 5 can also press down the gas flow a sprayed from the first gas inlet structure 4 and make the gas flow a sprayed from the first gas inlet structure 4 blow to the satellite disc 31 in a parabolic shape. It should be noted that the uniformity of the horizontal gas flow field is insufficient, the film thickness is uneven, and particles are easily generated on the upper cover 1. Compared with horizontal gas inlet, vertical gas inlet can improve the uniformity of horizontal gas inlet and reduce the problem of particle generation, but the gas utilization rate is low and the film forming is slow, which greatly hinders the production efficiency. By pressing down the reaction gas by the carrier gas, the reaction gas as a whole blows to the satellite disc 31 in a parabolic shape. Compared with vertical gas inlet, the problem of particle falling is further solved, and the film forming efficiency is high and the gas flow field is more uniform.

[0096] In order to further press down and blow the gas flow sprayed from the first gas inlet structure 4 to the satellite disc 31, in one embodiment, the second gas inlet structure 5 includes a plurality of carrier gas output members 52 arranged along the radial direction of the upper cover 1, each carrier gas output member 52 is connected with at least one gas inlet pipeline 6, and the gas inlet can be controlled individually. The reaction gas flow sprayed from the first gas inlet structure 4 is blown downward by the carrier gas flow sprayed from the plurality of carrier gas output members 52 from above. Such arrangement can not only make the reaction gas flow more uniform through the downward pressing and scattering actions, but also can facilitate the adjustment of the gas flow in different carrier gas output members 52 through segmentation, thereby improving the film thickness uniformity.

[0097] Please refer to Figure 3 , Figure 14In one embodiment, the second gas inlet structure 5 is located above the workpiece to be processed, the vertical projection 56 of the second gas inlet structure 5 has a width equal to the radius of the workpiece to be processed, and the vertical projection 56 covers the path from the edge of the workpiece to the center of the workpiece along the width direction of the vertical projection 56. Such arrangement concentrates the gas flow to the reaction gas above the wafer radius width close to the rotation center axis of the susceptor 3, which is more efficient than the arrangement in other positions, and can very efficiently affect the film growth rate with the least change in carrier gas amount. At the same time, because the wafer is constantly rotating, it will not affect the film deposition in each area of the wafer.

[0098] Further, the carrier gas output 52 of the reaction chamber 100 is the same as the number of regions of the workpiece to be processed and one-to-one correspondence, and each carrier gas output 52 is located directly above the corresponding region of the workpiece to be processed.

[0099] In some embodiments, referring to Figure 3 , the workpiece is sequentially divided into n regions from the edge to the center along the radial direction to the center, where the ith region is a circular ring, the nth region is a circle, 1≤i≤n-1, i, n are natural numbers, and n≥2; the carrier gas output 52 includes N and is sequentially arranged from inside to outside, the first carrier gas output 52 corresponds to the mth region of the reaction gas, where 1≤I≤N, N=n, m=I, N, m, I are natural numbers. When the satellite disc 31 rotates around the rotation center axis of the satellite disc 31, the film growth rate of the mth region of the workpiece to be processed corresponding to the carrier gas output 52 can be reduced by increasing the gas flow of the first carrier gas output 52. Reducing the gas flow of the first carrier gas output 52 can increase the film growth rate of the mth region of the workpiece to be processed corresponding to the carrier gas output 52.

[0100] It should be noted that each carrier gas output 52 includes a circle of top gas outlet holes 51, and the carrier gas output 52 includes N and is sequentially arranged from inside to outside, which means that the circles of top gas outlet holes 51 are sequentially arranged from inside to outside. And one carrier gas output 52 corresponds to one region of the wafer. The following embodiments are also arranged in this way.

[0101] In one embodiment, referring to Figure 15, the width of the vertical projection 56 of the second gas inlet structure 5 is equal to the radius of the workpiece, the vertical projection 56 covers part of the workpiece, the length of the area along the width direction of the vertical projection 56 is less than the radius of the workpiece, the top gas outlet holes 51 are parallel to each other, and the carrier gas sprayed by the top gas outlet holes 51 is towards the satellite disk 31 and is located at the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0102] In one embodiment, referring to Figure 16 , the width of the vertical projection 56 of the second gas inlet structure 5 is equal to the radius of the workpiece, the vertical projection 56 covers part of the workpiece, the length of the area along the width direction of the vertical projection 56 is less than the radius of the workpiece, the top gas outlet holes 51 are parallel to each other, and the carrier gas sprayed by the top gas outlet holes 51 is towards the satellite disk 31 and is located at the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0103] In one embodiment, referring to Figure 17 , Figure 18 , the width of the vertical projection 56 of the second gas inlet structure 5 is less than the radius of the workpiece, the vertical projection 56 covers part of the workpiece, the length of the area along the width direction of the vertical projection 56 is less than the radius of the workpiece, the top gas outlet holes 51 are parallel to each other, and the carrier gas sprayed by the top gas outlet holes 51 is towards the satellite disk 31 and is located at the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0104] In one embodiment, referring to Figure 19 , Figure 20 , the width of the vertical projection 56 of the second gas inlet structure 5 is greater than the radius of the workpiece, the vertical projection 56 covers part of the workpiece, the length of the area along the width direction of the vertical projection 56 is less than the radius of the workpiece, the top gas outlet holes 51 are parallel to each other, and the carrier gas sprayed by the top gas outlet holes 51 is towards the satellite disk 31 and is located at the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0105] In one embodiment, the second gas inlet structure 5 is located above the workpiece, the width of the vertical projection 56 of the second gas inlet structure 5 is equal to the diameter of the workpiece, and the vertical projection 56 covers the workpiece along the width direction of the vertical projection 56.

[0106] It should be noted that each of the areas can not only correspond to one carrier gas output member 52, but also can correspond to a plurality of carrier gas output members 52. This will be specifically described in the following embodiments.

[0107] When the number of the carrier gas output members 52 is even, the workpiece is divided into n regions in turn from the edge to the center along the radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i, n are natural numbers, and n≥2; the carrier gas output members 52 include 2M and are arranged in turn from the inside to the outside, the P-th carrier gas output member 52 and the 2M+1-P-th carrier gas output member 52 correspond to the m-th region, wherein 1≤P≤2M, M=n, M, m, P are natural numbers, when 1≤P≤M, m=P, and when M<P≤2M, m=2M+1-P. At this time, there are even carrier gas output members 52 distributed above the workpiece. When the satellite disk 31 rotates around the rotation center axis of the satellite disk 31, the film growth rate of the m-th region of the workpiece corresponding to the carrier gas output member 52 can be reduced by increasing the gas flow of the P-th or 2M+1-P-th carrier gas output member 52. Reducing the gas flow of the P-th or 2M+1-P-th carrier gas output member 52 can increase the film growth rate of the m-th region of the workpiece corresponding to the carrier gas output member 52.

[0108] When the number of the carrier gas output members 52 is odd, in an embodiment, the workpiece is divided into n regions in turn from the edge to the center along the radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i, n are natural numbers, and n≥2; the carrier gas output members 52 include 2Q-1 and are arranged in turn from the inside to the outside, the R-th carrier gas output member 52 and the 2Q-R-th carrier gas output member 52 correspond to the m-th region, wherein 1≤R≤2Q-1, Q=n, Q, m, R are natural numbers, when 1≤R≤Q, m=R, and when Q<R≤2Q-1, m=2Q-R. At this time, there are odd carrier gas output members 52 distributed above the workpiece. When the satellite disk 31 rotates around the rotation center axis of the satellite disk 31, the film growth rate of the m-th region of the workpiece corresponding to the carrier gas output member 52 can be reduced by increasing the gas flow of the Q-th or 2Q-R-th carrier gas output member 52. Reducing the gas flow of the Q-th or 2Q-R-th carrier gas output member 52 can increase the film growth rate of the m-th region of the workpiece corresponding to the carrier gas output member 52.

[0109] By adjusting one region with two carrier gas output members 52 at the same time, on the one hand, the adjustment efficiency can be improved, and on the other hand, the adjustment method is more diverse. For example, one of the two carrier gas output members 52 performs large-scale flow adjustment, and the other performs small-scale flow adjustment. Through the cooperation of different scales, the adjustment effect can be more fine, the result can be more accurate, and the uniformity can be better.

[0110] The vertical projection 56 of the second gas inlet structure 5 is away from the first gas inlet structure 4. In addition to this arrangement, the vertical projection 56 of the second gas inlet structure 5 can also be in contact with the first gas inlet structure 4. Specifically, in some embodiments, the second gas inlet structure 5 is above the workpiece, the width of the vertical projection 56 of the second gas inlet structure 5 is greater than or equal to 1.5 times the diameter of the workpiece, and the vertical projection 56 covers the area from the edge of the first gas inlet structure 4 to the center of the workpiece along the width direction of the vertical projection 56.

[0111] In some embodiments, the second gas inlet structure 5 is above the workpiece, the width of the vertical projection 56 of the second gas inlet structure 5 is greater than or equal to 1.5 times the diameter of the workpiece, and the vertical projection 56 covers the area from the edge of the first gas inlet structure 4 to the edge of the workpiece farthest from the first gas inlet structure 4.

[0112] By arranging the second gas inlet structure 5 to be larger, the flow rate of the carrier gas can be adjusted in a larger range, facilitating control of the film growth rate in different regions of the wafer.

[0113] The multi-wafer planetary epitaxy apparatus has a controller (not shown) which can be one of any form of general- purpose computer processor that can be used in an industrial setting for controlling various chambers and that is used in the sub-processors. Support circuits coupled to the CPU for supporting the processor in a conventional manner are also included in the controller. These circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, and the like. One or more processes can be stored in the memory as software routines that can be executed by, or called by, the CPU. Software routines can also be stored and / or executed by a second CPU (not shown) that is located remotely from the CPU that is controlled by the controller. The controller can include one or more configurations that can include any commands or functions used to control the flow rate, gas valves, gas sources, rotation, movement, heating, cooling, or other processes that perform the various configurations, such as can control the movement, rotation, gripping, releasing, etc. of a robotic arm. The controller can be coupled to the various components of the multi-wafer planetary epitaxy apparatus to control the operation thereof, for example, the controller can control the gas flow on / off, flow rate, flow volume, etc. in the first gas inlet structure 4 and the second gas inlet structure 5, in particular, the gas flow on / off, flow rate, flow volume, etc. of each gas inlet pipe 6 that is in communication with the first gas inlet channel 42 of the first gas inlet structure 4. The gas flow on / off, flow rate, flow volume, etc. of each carrier gas output 52 of the second gas inlet structure 5 can also be controlled. It is noted that the multi-wafer planetary epitaxy apparatus includes a plurality of gas inlet pipes 6, one gas inlet pipe 6 is in communication with one first gas inlet channel 42 or carrier gas output 52, the gas inlet pipe 6 is provided with a flow controller, the controller is electrically connected with the flow controller to control the gas flow on / off, flow rate, flow volume, etc. of the gas inlet pipe 6, so that the gas inlet of each first gas inlet channel 42 and each carrier gas output 52 can be controlled by controlling the gas inlet pipe 6. In some embodiments, the controller includes a central processing unit (CPU), a memory, and support circuits, and optionally, the controller is a single-chip microcomputer.

[0114] By controlling the carrier gas output 52 to separately and individually inlet gas, the uniformity of the gas flow can be controlled. The thin film growth rate of each region of the wafer surface can be made to tend to be the same.

[0115] The conventional epitaxial equipment sets two directions of gas inlet, one of the two kinds of reaction gases is set as horizontal gas inlet, and the other is set as vertical gas inlet, so as to mix the two kinds of reaction gases through two directions, so that the reaction gas mixing is more uniform, thereby making the thin film growth more uniform, but not only will destroy the predetermined proportion of the two kinds of reaction gas reaction, but also cannot be targeted to adjust the growth of each area of the wafer, and the reaction gas of the present application is sprayed from the first gas inlet structure, and the second gas inlet structure in the other direction only sprays carrier gas, the carrier gas is distributed more uniformly by colliding with the reaction gas to make the reaction gas be scattered, and the second gas inlet structure includes a plurality of independent gas inlet carrier gas output members 52, each wafer corresponds to one or more carrier gas output members 52, so as to adjust the gas flow of each carrier gas output member 52, thereby the thin film growth rate of each area of the wafer surface can be adjusted, so as to control the uniformity of the wafer surface to a very high level.

[0116] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A reaction chamber for an epitaxial process, characterized in that: include: reaction chamber; An upper cover, arranged on the top of the reaction chamber; a base rotatably disposed in the reaction chamber and spaced apart from and parallel to the upper cover; A plurality of satellite disks are circumferentially distributed on the base and are used to carry the workpiece to be processed. The base can rotate with the satellite disks around the rotation center axis of the base, and the satellite disks can rotate around the rotation center axis of the satellite disks. The upper cover is provided with a first air intake structure and a second air intake structure. The first air intake structure extends into the reaction chamber and extends a preset distance along the rotation center axis of the base, and can eject reaction gas into the surrounding reaction chamber. The second air intake structure is arranged around the first air intake structure and includes a plurality of carrier gas output elements that can independently intake air and eject carrier gas. Any radius of the surface of the workpiece to be processed is divided into multiple continuous line segments. Each of the line segments rotates around the center of the workpiece to be processed to form multiple adjacent non-overlapping concentric areas. Each of the areas corresponds to one or more carrier gas output elements. The carrier gas ejected by the second air inlet structure can press down at least part of the reaction gas ejected by the first air inlet structure and blow it toward the satellite disk. When the satellite disk rotates around the central axis of rotation of the satellite disk, the thin film growth rate of the area of ​​the workpiece to be processed corresponding to the carrier gas output component can be changed by adjusting the carrier gas flow rate of any one of the carrier gas output components. The second air inlet structure includes a plurality of top air outlets opened on the bottom surface of the upper cover facing the reaction chamber and used for ejecting carrier gas. The top air outlets are evenly arranged on a plurality of concentric circles distributed outward from the central axis of rotation of the base, and each of the carrier gas output components includes the top air outlets on one or more adjacent concentric circles.

2. The reaction chamber of an epitaxial process according to claim 1, characterized in that: The number of the top air outlets on each concentric circle is the same, and the top air outlets are radially distributed along multiple evenly distributed radial directions.

3. The reaction chamber of an epitaxial process according to claim 1, characterized in that: Each carrier gas output element includes at least two main channels, and the main channels are symmetrically arranged about the rotation center axis of the base.

4. The reaction chamber of an epitaxial process according to claim 3, characterized in that: The carrier gas output member further includes a secondary channel and a communication cavity provided between the main channel and the secondary channel. The main channel and the secondary channel are communicated with the communication cavity from upper and lower directions respectively.

5. The reaction chamber of an epitaxial process according to claim 1, characterized in that: The second air intake structure is located above the workpiece to be processed, the width of the vertical projection of the second air intake structure is equal to the radius of the workpiece to be processed, and the vertical projection covers the path from the edge of the workpiece to be processed to the center of the workpiece to be processed along the width direction of the vertical projection.

6. The reaction chamber for epitaxial process according to claim 5, characterized in that: The number of the carrier gas output components is the same as the number of the regions of the workpiece to be processed and they correspond one to one, and each of the carrier gas output components is located directly above the corresponding region of the workpiece to be processed.

7. The reaction chamber for epitaxial process according to claim 5, characterized in that: The workpiece to be processed is divided into n areas in sequence from the edge to the center along the radial direction inward, where the i-th area is annular and the n-th area is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output parts include N and are arranged in sequence from the inside to the outside, the i-th carrier gas output part corresponds to the reaction gas of the m-th area, where 1≤I≤N, N=n, m=I, and N, m, and I are natural numbers.

8. The reaction chamber for epitaxial process according to claim 5, characterized in that: The workpiece to be processed is divided into n areas in sequence from the edge to the center along the radial direction, wherein the i-th area is annular and the n-th area is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output parts include 2M and are arranged in sequence from the inside to the outside, the P-th carrier gas output part and the 2M+1-P-th carrier gas output part correspond to the m-th area, wherein 1≤P≤2M, M=n, M, m, and P are natural numbers, when 1≤P≤M, m=P, and when M<P≤2M, m=2M+1-P.

9. The reaction chamber for epitaxial process according to claim 5, characterized in that: The workpiece to be processed extends radially inward from the edge to the center and is divided into n areas in sequence, wherein the i-th area is annular and the n-th area is circular, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output components include 2Q-1 and are arranged in sequence from the inside to the outside, the R-th carrier gas output component and the 2Q-R-th carrier gas output components correspond to the m-th area, wherein 1≤R≤2Q-1, Q=n, Q, m, and R are natural numbers, when 1≤R≤Q, m=R, and when Q<R≤2Q-1, m=2Q-R.

10. The reaction chamber for epitaxial process according to claim 1, characterized in that: The first air intake structure is in the shape of a multi-layer sleeve and includes a plurality of first air intake channels. The first air intake channels include vertical channels and horizontal channels that are interconnected, wherein a plurality of the vertical channels are coaxially arranged radially around the central axis of the first air intake structure, the vertical channels are penetrated in the upper cover, and the horizontal channels leave the upper cover and extend into the reaction chamber.

11. A multi-wafer planetary epitaxial device, characterized in that: include: A reaction chamber comprising the epitaxial process according to any one of claims 1-10.

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