Process chambers and semiconductor processing equipment

Abstract

The present application provides a kind of process chamber and semiconductor process equipment, process chamber includes the base for carrying wafer, target material is arranged above base and is arranged between target material and base collimator, collimator includes body and adjusting structure, one of body and adjusting structure is provided with multiple first through holes along its thickness direction, the other includes multiple spaced apart protrusions, each protrusion is provided with second through hole along its thickness direction, first through hole and second through hole are communicated to form communication hole, the region of protrusion and first through hole cooperation is located in the central region of body;Body and adjusting structure can be relatively moved, to change the depth of communication hole.In this application, adjusting structure is used, the aspect ratio of second hole can be adjusted as the process proceeds, to achieve the purpose of adjusting the uniformity of sputtered material film formed on the material to be deposited.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a process chamber and semiconductor process equipment. Background Art

[0002] Currently, magnetron sputtering, a form of physical vapor deposition (PVD), is one of the most widely used techniques in the back-end process of integrated circuit chip fabrication. In the Cu interconnect PVD process, DC magnetron sputtering is typically used to deposit copper thin films. This process involves both sputtering and re-sputtering. During the deposition process, the distribution of copper ions above the wafer surface influences the process results to a certain extent.

[0003] As feature sizes shrink, the openings and aspect ratios of through-holes and trenches decrease, making the deposition of barrier / seed layers extremely challenging. To evenly fill holes with a thin barrier / seed layer while maintaining a large opening, the atoms or ions deposited onto the wafer during magnetron sputtering must be directed nearly perpendicularly to the wafer. To achieve this, a collimator is traditionally added between the target and the wafer to filter out copper ions incident at large angles, allowing them to enter the wafer at a nearly perpendicular angle to the wafer surface.

[0004] However, the collimators currently used are all fixed structures. At the beginning of the process, the thin film deposition rate in various areas of the substrate is consistent and the film is formed evenly. However, as the process progresses, copper ions / atoms will adhere to the pores of the collimator, causing its width to become smaller, the aspect ratio to increase, and the deposition rate of the thin film to decrease. At the same time, the film deposition rate in the central area and the surrounding area of ​​the collimator will differ. The film deposition rate in the central area decreases significantly with the target consumption, which is not conducive to the uniformity of the film. Summary of the Invention

[0005] The present invention aims to at least solve the problem in the prior art that as the process proceeds, the film deposition rate on the substrate varies, resulting in poor film uniformity, and proposes a process chamber and semiconductor process equipment.

[0006] To achieve the purpose of the present invention, a process chamber is provided for use in semiconductor process equipment. The process chamber includes a susceptor for supporting a wafer, a target material disposed above the susceptor, and a collimator disposed between the target material and the susceptor.

[0007] The collimator includes a body and an adjustment structure, one of which is provided with a plurality of first through holes extending through the body along its thickness direction, and the other includes a plurality of spaced-apart protrusions, each of which is provided with a second through hole extending through the body along its thickness direction, the first through holes and the second through holes being connected to form a communicating hole, and the area where the protrusions cooperate with the first through holes is located in the central area of ​​the body;

[0008] The main body and the adjusting structure can move relative to each other to change the depth of the communicating hole.

[0009] Optionally, the adjustment structure is located below the main body, and the process chamber further includes a driving component connected to the adjustment structure for driving the adjustment structure to move in a direction close to or away from the main body.

[0010] Optionally, the drive assembly includes a drive source, a lifting rod, a transmission assembly, and a bellows; one end of the lifting rod passes through a side wall of the process chamber and is connected to the adjustment structure; the transmission assembly includes a slider and a guide rail; the lifting rod is fixedly connected to the slider; the drive source can drive the slider to move along the extension direction of the guide rail, thereby driving the lifting rod to move axially;

[0011] The bellows is sleeved on the outer peripheral surface of the lifting rod, the top end of the bellows is sealed connected to the top end of the lifting rod, and the bottom end of the bellows is sealed connected to the inner wall of the process chamber.

[0012] Optionally, there is a gap between the outer wall of the protrusion and the inner wall of the first through hole.

[0013] Optionally, the interval distance is set to be greater than or equal to 2 mm and less than or equal to 3 mm.

[0014] Optionally, the collimator includes a plurality of first connection structures, and the first connection structure is used to connect the bottoms of two adjacent protrusions.

[0015] Optionally, the adjustment structure includes a second connection structure and a third connection structure, the second connection structure is arranged at an edge of the adjustment structure, and the second connection structure is connected to the driving assembly;

[0016] The third connection structure is provided with a hollow structure for the target material to pass through, and the hollow structure penetrates the third connection structure along the thickness direction. The third connection structure is used to connect the second connection structure and the first connection part.

[0017] Optionally, the process chamber further comprises a liner assembly, the liner assembly being used to prevent the target material from sputtering onto the inner wall of the process chamber;

[0018] The liner assembly includes a first protective liner and a second protective liner, wherein the first protective liner is arranged on the inner wall of the process chamber and extends downward from the lower end of the target;

[0019] The upper end of the second protective lining is externally mounted on the lower end of the first protective lining. The second protective lining is connected to a driving assembly, which can drive the second protective lining to move along with the adjusting structure.

[0020] Optionally, the collimator further comprises a first support plate disposed on the top of the body, and the body is fixedly connected to the inner wall of the first protective liner via the first support plate;

[0021] And / or, the collimator further includes a second support plate disposed at the bottom of the adjustment structure, and the adjustment structure is connected to the driving assembly via the second support plate.

[0022] Optionally, the lining assembly further includes a third protective lining, the upper end of the third protective lining being externally mounted on the lower end of the second protective lining, the third protective lining being arranged on the inner wall of the process chamber and being capable of shielding the lower part of the process chamber and the inner wall of the bottom.

[0023] The semiconductor process equipment provided by the present invention includes the process chamber in the above technical solution.

[0024] The present invention has the following beneficial effects:

[0025] The process chamber provided by the present invention can adjust the depth of the connecting hole as the process progresses through an adjustable structure. By adjusting the depth of the connecting hole, the passing rate of atoms or ions of the sputtering material in the central area of ​​the collimator can be changed, so that the number of atoms or ions of the sputtering material passing through each area of ​​the collimator is the same, ensuring that the sputtering material film formed on the substrate (material to be deposited) is always uniform as the process progresses, thereby solving the problem that as the process progresses, the atoms or ions of the sputtering material will adhere to the collimator, and the degree of adhesion in the central area is higher than that in the peripheral area, resulting in changes in the passing rate of atoms or ions of the sputtering material in different areas of the collimator, and the change ratio is not consistent, resulting in poor uniformity of the sputtering material film formed on the substrate (material to be deposited).

[0026] The semiconductor process equipment provided by the present invention can utilize the process chamber in the above technical solution to solve the problem in the prior art that as the process progresses, the film deposition rate on the substrate varies, resulting in poor film uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic structural diagram of the physical vapor deposition equipment used in the present invention;

[0028] Figure 2 for Figure 1 Schematic diagram of a local enlarged structure;

[0029] Figure 3 This is a side view of the main body of the present invention;

[0030] Figure 4 This is a side structural schematic diagram of the adjustment structure and the second protective lining adopted in the present invention;

[0031] Figure 5 This is a schematic diagram of the top view of the main body used in the present invention;

[0032] Figure 6 This is a schematic diagram of the top view of the regulating structure used in the present invention;

[0033] Figure 7 This is a schematic structural diagram of the adjustment structure and drive assembly used in the present invention.

[0034] Reference numerals

[0035] 100-collimator, 110-body, 111-first through hole, 120-adjustment structure, 121-convex portion, 122-second through hole, 123-first connecting structure, 124-second connecting structure, 125-third connecting structure, 126-second support plate, 130-driving assembly, 131-lifting rod, 132-driving source, 133-slider, 134-guide rail, 135-bellows, 136-connecting piece, 140-connecting hole,

[0036] 150 - first supporting plate, 200 - target material, 300 - process chamber, 410 - first protective liner, 420 - second protective liner, 430 - third protective liner, 431 - first sub-protective liner, 432 - second sub-protective liner, 433 - third sub-protective liner, 500 - base. DETAILED DESCRIPTION

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the process chamber and semiconductor process equipment provided by the present invention are described below with reference to the accompanying drawings.

[0038] In the prior art, the collimator 100 utilizes its porous structure to allow atoms or ions of the target material with a larger incident angle to adhere to the collimator 100 when passing through the collimator 100, thereby achieving the purpose of screening. Therefore, holes with the same aperture have different screening capabilities for the atoms or ions passing through when they have different lengths, that is, when they have different aspect ratios. Since more atoms or ions are generated in the middle of the target material 200 than at the edge of the target material 200, in order to make the thin film formed on the substrate (material to be deposited) more uniform, the through holes in the middle of the collimator 100 can have a larger aspect ratio than the through holes in the peripheral part. That is, under the same aperture condition, the through holes in the middle can have a longer length to have a larger aspect ratio, thereby making the screening amount in the middle of the collimator 100 higher than that in the peripheral area, thereby compensating for the problem of uneven distribution of atoms or ions of the target material generated in the target material, and making the sputtered material film formed on the material to be deposited (which can be a wafer placed on a base below) more uniform.

[0039] However, as the process progresses, the sputtered material adheres to the collimator 100, causing the aperture of the through hole on the collimator to gradually shrink. Moreover, due to the different aspect ratios, the shrinking speed of the through hole in the middle and the through hole in the peripheral part is different, which leads to a change in the passing rate of atoms or ions of the sputtered material. Moreover, this change is not uniform, causing the sputtered material film formed on the substrate to become non-uniform.

[0040] In this application, please refer to Figure 1 As shown, the process chamber 300 includes a base 500 for supporting wafers, a target material 200 arranged above the base 500, and a collimator 100 arranged between the target material 200 and the base 500. The collimator 100 includes a main body 110 and an adjustment structure 120. One of the main body 110 and the adjustment structure 120 is provided with a plurality of first through holes 111 extending through the thickness direction thereof, and the other includes a plurality of spaced-apart protrusions 121. Each protrusion 121 is provided with a second through hole 122 extending through the thickness direction thereof. The first through hole 111 and the second through hole 121 are connected to form a connecting hole 140. The area where the protrusion 121 cooperates with the first through hole 111 is located in the central area of ​​the main body 110. The main body 110 and the adjustment structure 120 can move relative to each other to change the depth of the connecting hole 140.

[0041] In order to achieve the purpose of adjusting the connecting hole 140, in the above technical solution, one of the body 110 or the adjusting structure 120 can be set as a honeycomb structure, that is, provided with a first through hole 111, and the other is provided with a plurality of protrusions 121. A more preferred embodiment is as follows Figure 1As shown, the body 110 is configured as a honeycomb structure, and a plurality of protrusions 121 are provided on the adjustment structure 120. Taking the provision of the protrusions 121 on the adjustment structure 120 as an example for explanation, the adjustment structure 120 is provided with a plurality of protrusions 121 spaced apart, each protrusion 121 being provided with a second through hole 122 penetrating the protrusion 121 along the thickness direction. The plurality of protrusions 121 are provided in a one-to-one correspondence with the plurality of first through holes 111 in the central region. That is, by nesting the protrusions 121 and the first through holes 111, the first through holes 111 and the second through holes 122 are connected, and the spaces within these connected holes constitute the connecting holes 140. Among them, the protrusion 121 is moved axially along the first through hole 111 to lengthen or shorten the overlapping portion of the first through hole 111 and the second through hole 122, thereby achieving the purpose of adjusting the length of the connecting hole 140. The aspect ratio of the connecting hole 140 can be adjusted as the process proceeds. For example, as the aperture decreases, the pass rate of the connecting hole 140 is adjusted by reducing the length of the connecting hole 140, thereby achieving the purpose of adjusting the uniformity of the sputtered material film formed on the substrate, avoiding the problem of poor uniformity of the film formed on the substrate as the process proceeds.

[0042] Due to the nested arrangement of the first through hole 111 and the second through hole 122, the aperture of the communicating hole 140 changes to a certain extent. Figure 1 Taking the structure shown in as an example, the first through hole 111 of the main body 110 is nested on the outside of the protrusion 121 from above, so that the aperture in the connecting hole 140 is reduced at the intersection of the first through hole 111 and the second through hole 122. This change will affect the passing rate of the atoms and ions of the target material through the connecting hole 140. In actual use, the length of the connecting hole 140 can be adjusted by adjusting the position of the protrusion 121 relative to the main body 110, thereby compensating for the influence of the aperture change of the connecting hole 140 on the passing rate of the atoms and ions of the target material.

[0043] The structures of the first through hole 111 and the second through hole 122 may include various embodiments, such as being formed by multiple tubes connected to each other through side walls, or Figure 5-6 As shown, it can also be formed by a plurality of interconnected walls (such as thin walls) in sequence. The first through hole 111 and the second through hole 122 can be set to have the same cross-sectional shape, such as circular, triangular and polygonal, etc. Figure 5-6 As shown, the hexagon used therein is only used as an example of a preferred embodiment and is not a limitation to the present application.

[0044] In addition, if Figure 1The figure only schematically shows the situation where the protrusion 121 of the adjustment structure 120 is inserted into the first through hole 111 of the main body 110 from below. In actual use, the protrusion 121 can be inserted into the main body 110 from above to achieve the effect to be achieved by the present invention.

[0045] There are many ways to adjust the position of the protrusion 121, including manual or automatic adjustment. To achieve better adjustment effects, a mechanical automatic control adjustment method can be used. As the process progresses, the mechanical structure gradually drives the protrusion 121 to move along the first through hole 111, which can not only reduce the manual burden but also more accurately control the adjustment process.

[0046] To enable the adjustment structure 120 to automatically adjust as the process progresses, as an optional embodiment, the adjustment structure 120 is located below the body 110, which is fixedly disposed within the process chamber 300. The adjustment structure 120 is connected to a drive assembly 130, which is capable of driving the protrusion 121 to move axially along the first through-hole 111. The drive assembly 130 can be configured to drive the protrusion 121 to move upward along the first through-hole 111 as the process progresses, thereby shortening the length of the connecting hole 140, thereby compensating for the problem of uneven coating caused by the reduction in the diameter of the connecting hole 140 as the process progresses.

[0047] As an optional embodiment, the driving assembly 130 includes a driving source 132, a lifting rod 131, a transmission assembly and a bellows 135; one end of the lifting rod 131 passes through the side wall of the process chamber 300 and is connected to the moving part 122, the transmission assembly includes a slider 133 and a guide rail 134, the lifting rod 131 is fixedly connected to the slider 133, and the driving source 132 can drive the slider 133 to move along the extension direction of the guide rail 134 to drive the lifting rod 131 to move axially; the bellows 135 is sleeved on the outer peripheral surface of the lifting rod 131, the top end of the bellows 135 is sealed with the top end of the lifting rod 131, and the bottom end of the bellows 135 is sealed with the inner wall of the process chamber 300, and the bellows 135 can extend or shorten with the movement of the lifting rod 131.

[0048] Specifically, the driving source 132 can be a device that provides mechanical power such as an electric motor or a gasoline engine, or can be an air source for pneumatic drive or a hydraulic pump for hydraulic drive. Accordingly, the transmission component can be matched with the driving source 132 and can be in the form of a gear transmission and a telescopic rod driven by pneumatic or hydraulic pressure, a slider and a rail assembly. Figure 1 as well as Figure 7As shown, it uses an electric motor as the driving power, and the transmission assembly includes a slider 133 and a guide rail 134, wherein the guide rail 134 can be a screw structure that can be driven to rotate by the motor, and the slider 133 can move on the slide rail as the screw rotates, and the lifting rod 131 is connected to the slider 133 through a connecting piece 136, so that it can move up and down together with the slider 133.

[0049] Since the process chamber 300 needs to be in a sealed state, Figure 7 When the driving source 132 and the transmission assembly of the driving assembly 130 are arranged outside the process chamber 300, the lifting rod 131 needs to pass through the side wall of the process chamber 300, thereby causing the sealing of the process chamber 300 to fail. In order to compensate for this problem, as shown in FIG. Figure 7 As shown, the drive assembly 130 may further include a bellows 135, one end of the bellows 135 is sealedly connected to the top of the lifting rod 131, and the other end is sealedly connected to the inner wall of the process chamber 300, so that the gap between the side wall of the process chamber 300 and the lifting rod 131 can be sealed, and the bellows 135 can extend or shorten with the movement of the lifting rod 131, thereby ensuring the sealing performance while maintaining the sealing effect.

[0050] As the process progresses, the target material will adhere to the inner walls of the first through-hole 111 and the second through-hole 122. As the process progresses, the inner diameter of the first through-hole 111 decreases, which may prevent the protrusion 121 from moving along the first through-hole 111, causing device failure. To address this issue, a gap can be provided between the outer wall of the protrusion 121 and the inner wall of the first through-hole 111. In this way, although the target material still adheres to the inner wall of the first through-hole 111 as the process progresses, the presence of the gap requires that the target material completely fill the gap before the protrusion 121 becomes immobile. Therefore, the provision of the gap can effectively prevent the collimator 100 of the present invention from losing its adjustment capability during the process. In addition, it should be noted that while the spacing ensures that the protrusion 121 is movable, it should not be set too large. If it is too large, the inner diameter of the second through hole 122 will be too small, and the atoms and ions of the target material may also pass through the spacing here in large quantities and then sputter onto the material to be deposited. An excessively large spacing will cause the collimator 100 provided by the present invention to lose its adjustment ability and cause the thin film formed on the substrate to be uneven.

[0051] Furthermore, the interval distance may be set to be greater than or equal to 2 mm and less than or equal to 3 mm.

[0052] like Figure 4 as well as Figure 6As shown, the collimator 100 includes a plurality of first connecting structures 123, which are used to connect the bottoms of two adjacent protrusions 121. By arranging the first connecting structure 123 between the two adjacent protrusions 121, the plurality of protrusions 121 can be connected to form a mesh structure. This connection method is more stable. Taking the hexagonal protrusions 121 in the figure as an example, each side can have a first connecting structure 123 connected to another protrusion 121 connected to it, and finally form a mesh structure. Such a structure can also have good stability. Even if part of the first connecting structure 123 breaks and fails, it will not cause the entire structure to fail. In order to reduce the obstruction of the first connecting structure 123 to the target material, the first connecting structure 123 can be implemented in a rod shape.

[0053] In addition, the adjustment structure 120 further includes a second connection structure 124 and a third connection structure 125. The second connection structure 124 is provided at the edge of the adjustment structure 123 and is connected to the driving assembly 130. The third connection structure 125 is provided with a hollow structure for the target material to pass through. The hollow structure penetrates the third connection structure 125 along the thickness direction. The third connection structure 125 is used to connect the second connection structure 124 and the first connection structure 123. Figure 6 As shown, the second connection structure 124 can be an annular structure provided at the edge of the adjustment structure 120, such as Figure 1 as well as Figure 4 As shown, the edge of the second connecting structure 124 can be used to connect to the drive assembly 130. In addition, the second protective liner 420 can also be connected to the drive assembly 130 using the second connecting structure 124, so that the drive assembly 130 can drive the second protective liner 420 to move. In addition, the hollow structure in the third connecting structure 125 is provided to minimize the obstruction of atoms or ions of the target material passing through the peripheral area of ​​the body 110. Therefore, when setting it up, the volume of the hollow structure can be set as large as possible while ensuring the strength of the third connecting structure 125, so as to minimize the impact on the process.

[0054] In addition, in order to protect the inner wall of the process chamber from contamination by the target material, such as Figure 1 As shown, the physical vapor deposition equipment also includes a lining assembly, which is used to prevent the target material from sputtering onto the inner wall of the process chamber 300; the lining assembly includes a first protective liner 410 and a second protective liner 420, and the first protective liner 410 extends downward from the lower end of the target 200; the upper end of the second protective liner 420 is arranged outside the lower end of the first protective liner 410, and the second protective liner 420 is connected to the driving assembly 130, and the driving assembly 130 can drive the second protective liner 420 to move with the adjustment structure 120.

[0055] Specifically, if Figure 1 as well as Figure 2 As shown, the outer peripheral surface of the first protective liner 410 may be provided with a protruding structure for installation and fixation, and the wall of the process chamber 300 may be provided with a groove for accommodating the above-mentioned protruding structure, so as to fix the first protective liner 410 on the inner wall of the process chamber 300. At the same time, the top of the first protective liner 410 extends from the lower end of the target material 200. Since the atoms or ions of the target material are emitted from the lower surface of the target material, arranging the first protective liner 410 here helps to avoid the target material from adhering to the inner wall of the process chamber 300 as much as possible. Due to the arrangement of the protrusion 121, in order not to affect the movement of the protrusion 121, the fixed protective liner must usually be provided with hollow avoidance holes, etc., but the atoms or ions of the target material can pass through these hollow avoidance holes and adhere to the inner wall of the process chamber 300. In order to solve this problem, as Figure 4 As shown, the present application connects the second protective liner 420 to the drive assembly 130 via the second connecting structure 124, thereby achieving the effect that the second protective liner 420 can move together with the protrusion 121, eliminating the need for the provision of a hollowed-out avoidance hole. In order to achieve a better protective effect, the second protective liner 420 can be placed inside or outside the first protective liner 410, so that a portion of the upper portion of the second protective liner 420 can always overlap with the lower portion of the first protective liner 410, thereby preventing the target material from passing through the gap between the first protective liner 410 and the second protective liner 420. Even if the movable portion 122 moves up and down, no gap will be generated between the first protective liner 410 and the second protective liner 420 in the vertical direction.

[0056] As an optional implementation, Figure 1 As shown, the collimator 100 further includes a first support plate 150 disposed on the top of the body 110, and the first support plate 150 is fixedly connected to the inner wall of the first protective liner 410. Figure 1 As shown, a groove is provided on the inner wall of the first protective liner 410 , and the edge of the first support plate 150 is clamped in the groove, thereby achieving the purpose of fixing the body 110 .

[0057] In addition, if Figure 1 As shown, as an optional embodiment, the collimator may also include a second support plate 126 arranged at the bottom of the adjustment structure 120, the adjustment structure 120 is connected to the drive assembly 130 through the second support plate 126, and the second protective liner 420 can also be connected to the drive assembly 130 using the second support plate 126, so that the drive assembly 130 can drive the second protective liner 420 to move.

[0058] Similarly, if Figure 1As shown, the third protective liner 430 is sleeved on the upper end of the second protective liner 420, and is arranged on the inner wall of the process chamber 300 and can shield the lower part and the bottom inner wall of the process chamber 300.

[0059] Similarly to the positional relationship between the first protective liner 410 and the second protective liner 420, the lower end of the second protective liner 420 is partially overlapped with the upper end of the third protective liner 430, so as to avoid the gap between the second protective liner 420 and the third protective liner 430 during movement, and thus the target material adheres to the sidewall of the process chamber 300 through the gap, and in addition, the third protective liner 430 can also shield the bottom wall of the process chamber 300 to protect it. Figure 1 As shown, the top outer circumferential surface of the third protective liner 430 can be provided with a protrusion for fixing the third protective liner 430, and the protrusion is connected with the inner wall of the process chamber 300 to fix the third protective liner 430.

[0060] In addition, as another embodiment, the third protective liner 430 includes a first sub-protective liner 431, a second sub-protective liner 432 and a third sub-protective liner 433, wherein, as shown, Figure 1 As shown, the upper end of the first sub-protective liner 431 is sleeved on the lower end of the second protective liner 420, so that the lower end of the second protective liner 420 is always partially overlapped with the first sub-protective liner 431 when the second protective liner 420 moves with the driving assembly, and the first sub-protective liner 431 can be arranged to extend from the lower end of the second protective liner 420 to the bottom wall of the process chamber 300 and be connected with the second sub-protective liner 432, and the second sub-protective liner 432 is used to protect the bottom inner wall of the process chamber 300, and the second sub-protective liner 432 is arranged circumferentially around the pedestal, and the edge of the second sub-protective liner 432 is connected with the first sub-protective liner 431, and the third sub-protective liner 433 extends downward from the bottom of the edge of the pedestal and is connected with the third sub-protective liner 432, and the third sub-protective liner 433 can block the sputtering of the target material to the bottom of the pedestal. After being arranged in this way, the inner liner assembly can completely cover or shield all parts of the process chamber 300 located below the target material 200, so as to achieve a better protection effect.

[0061] In order to facilitate the adhesion of the target material on the inner liner assembly, one side of the inner liner assembly facing the inside of the process chamber 300 can be provided with a relatively rough surface, and the adhesion of the target material is facilitated by increasing the roughness of the surface.

[0062] The semiconductor process equipment provided by the application can utilize the process chamber in the technical solution to solve the problem in the prior art that the deposition rate of the film on the substrate appears difference as the process proceeds, which leads to poor film uniformity.

[0063] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber, used in semiconductor process equipment, characterized in that: The process chamber includes a susceptor for carrying a wafer, a target material disposed above the susceptor, and a collimator disposed between the target material and the susceptor. The collimator comprises a body and an adjustment structure, wherein one of the body and the adjustment structure is provided with a plurality of first through holes extending through the body along its thickness direction, and the other comprises a plurality of spaced-apart protrusions, each of the protrusions being provided with a second through hole extending through the body along its thickness direction, the first through holes and the second through holes being connected to form a communicating hole, and the area where the protrusions cooperate with the first through holes is located in the central area of ​​the body; The main body and the adjusting structure can move relative to each other to change the depth of the communicating hole.

2. The process chamber according to claim 1, wherein: The adjustment structure is located below the main body. The process chamber further includes a driving component connected to the adjustment structure for driving the adjustment structure to move in a direction close to or away from the main body.

3. The process chamber according to claim 2, wherein: The driving assembly includes a driving source, a lifting rod, a transmission assembly and a bellows; One end of the lifting rod passes through the side wall of the process chamber and is connected to the adjustment structure. The transmission assembly includes a slider and a guide rail. The lifting rod is fixedly connected to the slider. The driving source can drive the slider to move along the extension direction of the guide rail to drive the lifting rod to move axially. The bellows is sleeved on the outer circumferential surface of the lifting rod, the top end of the bellows is sealedly connected to the top end of the lifting rod, and the bottom end of the bellows is sealedly connected to the inner wall of the process chamber.

4. The process chamber according to claim 1, wherein: There is a gap between the outer wall of the protrusion and the inner wall of the first through hole.

5. The process chamber according to claim 3, wherein: The distance of the interval is set to be greater than or equal to 2 mm and less than or equal to 3 mm.

6. The process chamber according to claim 2, wherein: The collimator includes a plurality of first connection structures, wherein the first connection structures are used to connect the bottoms of two adjacent protrusions.

7. The process chamber according to claim 6, wherein: The adjustment structure includes a second connection structure and a third connection structure, wherein the second connection structure is provided at an edge of the adjustment structure, and the second connection structure is connected to the driving assembly; The third connection structure is provided with a hollow structure for target material to pass through, and the hollow structure penetrates the third connection structure along the thickness direction. The third connection structure is used to connect the second connection structure and the first connection structure.

8. The process chamber according to claim 2, wherein: The process chamber further includes a liner assembly, wherein the liner assembly is used to prevent the target material from sputtering onto the inner wall of the process chamber; The liner assembly includes a first protective liner and a second protective liner, wherein the first protective liner is disposed on the inner wall of the process chamber and extends downward from the lower end of the target; The upper end of the second protective lining is externally mounted on the lower end of the first protective lining. The second protective lining is connected to a driving assembly, and the driving assembly can drive the second protective lining to move along with the adjusting structure.

9. The process chamber according to claim 8, wherein: The collimator further comprises a first support plate disposed on the top of the body, and the body is fixedly connected to the inner wall of the first protective liner via the first support plate; And / or, the collimator further includes a second support plate disposed at the bottom of the adjustment structure, and the adjustment structure is connected to the driving assembly via the second support plate.

10. The process chamber according to claim 8, wherein: The lining assembly also includes a third protective lining, the upper end of which is placed outside the lower end of the second protective lining. The third protective lining is arranged on the inner wall of the process chamber and can cover the lower part and the inner wall of the bottom of the process chamber.

11. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1 to 10.

Images