A method, device, equipment and medium for quickly splitting a quadruple layout of a through-hole layer

Abstract

The present application discloses a method, device, equipment and medium for quickly splitting a quadruple layout of a via layer, which relates to the field of semiconductor technology, including: obtaining a via layer layout with via pattern conflicts and splitting requirements for quadruple layout exposure of the via layer layout; clustering the via patterns of the via layer layout based on the splitting requirements and according to the position proximity clustering rules to obtain the first via layer layout and the second via layer layout after clustering processing; using double layout exposure processing for the first via layer layout and the second via layer layout respectively to obtain corresponding exposure processing results, and completing the splitting process of the quadruple layout exposure. The present invention clusters the via patterns of the via layer layout according to the clustering rules, and then performs double exposure on the first via layer layout and the second via layer layout, rather than quadruple exposure on the entire via layer layout, so the scale of processing is reduced, a higher resolution is achieved, and the overall time consumption is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method, device, equipment and medium for quickly splitting a quadruple layout of a through-hole layer. Background Art

[0002] In single exposure, the 28nm node is the resolution limit of the current mainstream DUV lithography machine. For nodes below 28nm, double exposure or multiple exposure is generally adopted to meet production needs. That is, a layer of graphics (mainly conflicting graphics) is divided into two layers of graphics or multiple layers of graphics (non-conflicting graphics), also known as the coloring process or splitting process. Currently, EDA manufacturers provide relatively mature double exposure solutions.

[0003] When the Fab process reaches below 5nm, multiple exposures are often required to increase the layout with higher resolution, especially the high resolution requirement of the through-hole layer. However, the quadruple exposure of the through-hole layer is very time-consuming. From double-patterning (1 to 2) to trible-patterning (1 to 3) and then to quart-patterning (1 to 4), the time consumption increases exponentially.

[0004] In summary, how to maintain high resolution of the layout after splitting the through-hole layer while reducing the time consumption of layout splitting is a technical problem to be solved in this field. Summary of the invention

[0005] In view of this, the purpose of the present invention is to provide a method, device, equipment and medium for quickly splitting a quadruple layout of a through-hole layer, which can maintain high resolution of the through-hole layer after splitting while reducing the time consumption of layout splitting. The specific scheme is as follows:

[0006] In a first aspect, the present application discloses a method for rapidly splitting a quadruple layout of a via layer, comprising:

[0007] Obtaining a through-hole layer layout with through-hole pattern conflicts and splitting requirements for quadruple layout exposure of the through-hole layer layout;

[0008] Based on the splitting requirement and according to the position proximity clustering rule, the through hole patterns of the through hole layer layout are clustered to obtain a first through hole layer layout and a second through hole layer layout after clustering;

[0009] The first through hole layer layout and the second through hole layer layout are respectively subjected to double layout exposure processing to obtain corresponding exposure processing results, so as to complete the splitting process of the quadruple layout exposure.

[0010] Optionally, the process of clustering the through hole graphics of the through hole layer layout based on the splitting requirement and according to the position proximity clustering rule further includes:

[0011] Determine the quadruple layout exposure area of ​​the through-hole layer layout based on the splitting requirement;

[0012] Acquire all through-hole patterns and position information of corresponding through-hole patterns in the quadruple layout exposure area.

[0013] Optionally, clustering the through-hole patterns of the through-hole layer layout based on the splitting requirement and according to a position proximity clustering rule to obtain a first through-hole layer layout and a second through-hole layer layout after clustering, comprises:

[0014] Calculate the Euclidean distance between two through-hole patterns according to the position information between the through-hole patterns;

[0015] Based on the size relationship between each Euclidean distance and a preset distance threshold, corresponding cluster centers are selected, and cluster processing is performed on each through-hole pattern according to each cluster center and the Euclidean distance to obtain a first through-hole layer layout and a second through-hole layer layout after cluster processing.

[0016] Optionally, the calculating the Euclidean distance between two through-hole patterns according to the position information between the through-hole patterns includes:

[0017] Selecting any one through-hole pattern from all the through-hole patterns as a current cluster center, and selecting any other through-hole pattern except the current cluster center as a through-hole pattern to be processed;

[0018] Obtaining the Euclidean distance between the through-hole pattern to be processed and the current cluster center according to the distance difference between the position information of the through-hole pattern to be processed and the position information of the current cluster center;

[0019] Correspondingly, based on the size relationship between each of the Euclidean distances and the preset distance threshold, the corresponding cluster centers are selected, and the through-hole patterns are clustered according to each of the cluster centers and the Euclidean distances to obtain the first through-hole layer layout and the second through-hole layer layout after clustering, including:

[0020] If the Euclidean distance is greater than a preset distance threshold, updating the through-hole pattern to be processed as a new current cluster center;

[0021] If the Euclidean distance is less than or equal to a preset distance threshold, the through-hole pattern to be processed is divided into clusters of the current cluster center to obtain a corresponding clustering result;

[0022] Traversing each of the through-hole patterns, and taking the currently traversed through-hole pattern as the through-hole pattern to be processed, and then jumping to the step of obtaining the Euclidean distance between the through-hole pattern to be processed and the current cluster center according to the distance difference between the position information of the through-hole pattern to be processed and the position information of the current cluster center;

[0023] The clustering results after traversal are allocated according to a preset allocation rule to generate a first through-hole layer layout and a second through-hole layer layout.

[0024] Optionally, allocating the clustering results after the traversal according to a preset allocation rule to generate a first through-hole layer layout and a second through-hole layer layout includes:

[0025] Allocate the clustering results after traversal according to a random allocation rule to generate a first through-hole layer layout and a second through-hole layer layout;

[0026] Or, assigning the clustering results after traversal according to the through-hole pattern feature assignment rule to generate a first through-hole layer layout and a second through-hole layer layout;

[0027] Or, the clustering results after traversal are allocated according to the exposure process allocation rule to generate the first through hole layer layout and the second through hole layer layout.

[0028] Optionally, the step of performing double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of the quadruple layout exposure includes:

[0029] Using a photolithography machine to perform a first exposure process on the first through-hole layer layout and the second through-hole layer layout, respectively, to obtain a first exposure process result and a second exposure process result including through-hole patterns after exposure, respectively;

[0030] Based on preset exposure parameters, the first exposure processing result and the second exposure processing result are respectively subjected to a second layout exposure processing to obtain a layout splitting result after four exposure splittings.

[0031] Optionally, after obtaining the layout splitting result after the four exposure splits, it also includes:

[0032] OPC correction is performed on each of the layout splitting results respectively to correct and refine the layout splitting results to obtain the target layout correction results.

[0033] In a second aspect, the present application discloses a fast splitting device for a through-hole layer quadruple layout, comprising:

[0034] A layout acquisition module, used for acquiring a through-hole layer layout with through-hole pattern conflicts and splitting requirements for quadruple layout exposure of the through-hole layer layout;

[0035] A clustering processing module, used for clustering the through-hole patterns of the through-hole layer layout based on the splitting requirements and according to the position proximity clustering rule, so as to obtain the first through-hole layer layout and the second through-hole layer layout after clustering processing;

[0036] The double exposure module is used to perform double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of the quadruple layout exposure.

[0037] In a third aspect, the present application discloses an electronic device, comprising:

[0038] Memory, used to store computer programs;

[0039] The processor is used to execute the computer program to implement the steps of the aforementioned method for fast splitting of the via layer quadruple layout.

[0040] In a fourth aspect, the present application discloses a computer-readable storage medium for storing a computer program; wherein, when the computer program is executed by a processor, the steps of the method for rapidly splitting a via layer quadruple layout disclosed above are implemented.

[0041] It can be seen that the present invention provides a method for quickly splitting a through-hole layer quadruple layout, including: obtaining a through-hole layer layout with a through-hole pattern conflict and a splitting requirement for quadruple layout exposure of the through-hole layer layout; clustering the through-hole patterns of the through-hole layer layout based on the splitting requirement and according to the position proximity clustering rule to obtain the first through-hole layer layout and the second through-hole layer layout after clustering; using double layout exposure processing for the first through-hole layer layout and the second through-hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of the quadruple layout exposure. It can be seen that firstly, a through-hole layer layout with a through-hole pattern conflict and a splitting requirement for quadruple layout exposure are obtained, and based on this requirement, the through-hole patterns of the through-hole layer layout are clustered according to the position proximity clustering rule. In this way, a complex through-hole pattern set is grouped so that through-hole patterns with similar position features are divided together. The complexity of subsequent processing can be reduced because it is more efficient to operate in a smaller set of graphics with certain commonalities than to process on the entire huge through-hole layer layout. Since double exposure is performed on two relatively small first through-hole layer layouts and second through-hole layer layouts, rather than quadruple exposure on the entire through-hole layer layout, the scale of processing is greatly reduced. Traditional quadruple exposure requires four consecutive exposure operations on the entire layout, involving a lot of calculation and processing time. In the present invention, by decomposing the quadruple exposure into two parts and performing double exposure, the processing time of each part is relatively short, thereby reducing the overall time consumption. At the same time, double layout exposure processing is used for the first through-hole layer layout and the second through-hole layer layout respectively. By performing two exposures in each part and precisely controlling the exposure parameters and sequence, the through-hole pattern can be gradually defined to achieve a higher resolution and reach the same level as the entire through-hole layer layout. Figure 4 Re-exposure for the same high-resolution effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0043] Figure 1 A flow chart of a method for rapidly splitting a through-hole layer quadruple layout disclosed in the present application;

[0044] Figure 2 A schematic diagram of an original through-hole layer layout disclosed in this application;

[0045] Figure 3 A schematic diagram of the result of clustering a through-hole layer layout disclosed in this application;

[0046] Figure 4 A schematic diagram of a double exposure result disclosed in this application;

[0047] Figure 5 A flow chart of a method for rapidly splitting a through-hole layer quadruple layout disclosed in the present application;

[0048] Figure 6 This is a structural diagram of an electronic device disclosed in this application. DETAILED DESCRIPTION

[0049] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0050] In single exposure, the 28nm node is the resolution limit of the current mainstream DUV lithography machine. For nodes below 28nm, double exposure or multiple exposure is generally adopted to meet production needs. That is, a layer of graphics (mainly conflicting graphics) is divided into two layers of graphics or multiple layers of graphics (non-conflicting graphics), also known as the coloring process or splitting process. Currently, EDA manufacturers provide relatively mature double exposure solutions.

[0051] When the Fab process reaches below 5nm, multiple exposures are often required to increase the layout with higher resolution, especially the high resolution requirement of the through-hole layer. However, the quadruple exposure of the through-hole layer is very time-consuming. From double-patterning to trible-patterning and then to quart-patterning, the time consumption increases exponentially.

[0052] To this end, the present invention provides a method, device, equipment and medium for quickly splitting a quadruple layout of a through-hole layer, which can maintain high resolution of the split layout of the through-hole layer while reducing the time consumption of layout splitting.

[0053] Reference Figure 1 As shown, an embodiment of the present invention discloses a method for quickly splitting a quadruple layout of a via layer, comprising:

[0054] Step S11: obtaining a through hole layer layout with through hole pattern conflicts and a splitting requirement for quadruple layout exposure of the through hole layer layout.

[0055] In this embodiment, in the case of high-density integration, numerous through-hole graphics need to be laid out in a limited space, which easily makes the positional relationship between different through-hole graphics complicated, thereby causing conflicts. For example, in order to achieve higher performance and more functions, there may be a large number of through holes of different sizes and shapes in the design, which may be close to each other or even overlap when laid out. Therefore, the through-hole layer layout to be split is a through-hole layer layout that has problems in the layout, shape, and position of the through-hole graphics, and needs to be split and optimized. In order to meet the manufacturing requirements of the through-hole layer layout, the through-hole layer needs to be split and optimized to a certain extent. Specifically, first obtain the prepared through-hole layer layout with conflicting through-hole graphics, that is, the original through-hole layer layout, and obtain the splitting requirements for the current through-hole layer layout. The original through-hole layer layout is as follows: Figure 2 As shown, Figure 2 The squares in the figure represent the positions of the through-hole patterns in the through-hole layer layout, and the arrows indicate conflicts. It should be noted that in order to achieve the high-resolution design requirements and low-time requirements for the through-hole layer layout, the splitting requirements for the quadruple layout exposure of the through-hole layer layout are obtained.

[0056] Step S12: clustering the through hole patterns of the through hole layer layout based on the splitting requirement and according to the position proximity clustering rule to obtain the first through hole layer layout and the second through hole layer layout after clustering.

[0057] In this embodiment, the process of clustering the through-hole graphics of the through-hole layer layout based on the splitting requirements and according to the position proximity clustering rules also includes: determining the quadruple layout exposure area of ​​the through-hole layer layout based on the splitting requirements; obtaining the position information of all through-hole graphics and corresponding through-hole graphics located in the quadruple layout exposure area. It can be understood that in the process of clustering processing, it is necessary to determine the layout area of ​​the quadruple layout exposure according to the splitting requirements. These layout areas are usually key parts with extremely high resolution requirements, such as dense through-hole areas connecting different circuit layers, that is, quadruple layout exposure areas. Then obtain the position information of all through-hole graphics and corresponding through-hole graphics located in the quadruple layout exposure area.

[0058] In this embodiment, the Euclidean distance between two through-hole graphics is calculated based on the position information between each through-hole graphics; based on the size relationship between each Euclidean distance and the preset distance threshold, the corresponding cluster centers are selected, and each through-hole graphics is clustered according to each cluster center and the Euclidean distance to obtain the first through-hole layer layout and the second through-hole layer layout after clustering. It can be understood that after obtaining the position information of the through-hole graphics, the position information is further used to calculate the Euclidean distance between the through-hole graphics in the through-hole layer layout, so as to determine each cluster center according to the size relationship between the Euclidean distance and the preset distance threshold, and then cluster the through-hole graphics to obtain the first through-hole layer layout and the second through-hole layer layout. The samples (through-hole graphics) in the conflicting through-hole layer layout are classified by clustering to split the layout into different layers. The clustering rule determines whether the samples belong to the same cluster by calculating the Euclidean distance between the through-hole graphics and comparing it with the set distance threshold.

[0059] In this embodiment, any one through-hole graphic is selected from all the through-hole graphics as the current cluster center, and any other through-hole graphic except the current cluster center is selected as the through-hole graphic to be processed; the Euclidean distance between the through-hole graphic to be processed and the current cluster center is obtained according to the distance difference between the position information of the through-hole graphic to be processed and the position information of the current cluster center; if the Euclidean distance is greater than a preset distance threshold, the through-hole graphic to be processed is updated to the new current cluster center; if the Euclidean distance is less than or equal to the preset distance threshold, Then the through-hole graphics to be processed are divided into clusters of the current cluster center to obtain the corresponding clustering results; each through-hole graphics is traversed, and the currently traversed through-hole graphics is used as the through-hole graphics to be processed, and then jump to the step of obtaining the Euclidean distance between the through-hole graphics to be processed and the current cluster center according to the distance difference between the position information of the through-hole graphics to be processed and the position information of the current cluster center; each clustering result after traversal is completed is allocated according to the preset allocation rule to generate the first through-hole layer layout and the second through-hole layer layout. It can be understood that the position proximity clustering rule of the present invention is a proximity clustering algorithm, and the specific steps of the clustering process of the through-hole graphics using the proximity clustering algorithm are as follows:

[0060] 1. Initialization:

[0061] Take any sample from the quadruple exposure area (arbitrary through-hole pattern) as the initial value of the first cluster center, for example, let This means that a through-hole pattern is first randomly selected as the current cluster center of the first cluster.

[0062] 2. Process the second sample:

[0063] Calculation Sample (Through hole pattern to be processed) to Distance The distance here can be a metric such as Euclidean distance, which measures the relative position difference between two through-hole patterns in the layout.

[0064] Comparing Euclidean distances Distance threshold If the size relationship between , then define a new current cluster center This means that if the second sample If the distance from the current cluster center of the first cluster is greater than the set threshold, then the second sample is used. (Through hole graphics to be processed) is the current cluster center Create a new cluster.

[0065] like , then Join to is the cluster of the current cluster center.

[0066] 3. Processing the third and subsequent samples:

[0067] When there are cluster centers and ,calculate and . Calculate the third sample separately The Euclidean distance to the two existing current cluster centers.

[0068] like and , then establish the third current cluster center If the distance between the third sample and the two existing current cluster centers is greater than the threshold, then the third cluster is established with this sample as the center.

[0069] If exists or , then judge and size, and Divide into the smallest cluster between the two.

[0070] By analogy, continue to process subsequent samples, follow the same logic, continuously calculate the distance from the sample to the existing current class center, and decide whether to establish a new current cluster center or classify the sample into an existing cluster based on the relationship between the Euclidean distance and the preset distance threshold, until all samples are classified.

[0071] Through the above process, the proximity clustering algorithm can classify the through-hole graphics in the conflicting through-hole layer layout, and then allocate the clustering results after the traversal according to the preset allocation rules to generate the first through-hole layer layout and the second through-hole layer layout. Specifically, after clustering, the clustering results after the traversal are allocated according to the random allocation rules to generate the first through-hole layer layout and the second through-hole layer layout; or, the clustering results after the traversal are allocated according to the through-hole graphic feature allocation rules to generate the first through-hole layer layout and the second through-hole layer layout; or, the clustering results after the traversal are allocated according to the exposure process allocation rules to generate the first through-hole layer layout and the second through-hole layer layout. It can be understood that after clustering, since there are clustering results with the same number as the clustering centers, the classification of the through-hole graphics in the conflicting through-hole layer layout is realized. Specifically, the completed clustering results are classified into two layers according to the preset allocation rules to obtain the first through-hole layer layout and the second through-hole layer layout. Figure 3As shown, the classification of the two layers obtains the first through-hole layer layout represented by the red layer and the second through-hole layer layout represented by the green layer, wherein, if the preset allocation rule is random allocation, the clustering results can be randomly allocated to the red layer and the green layer. For example, a random number generator is used to generate a random number for each clustering result. If the random number is less than a certain value (such as 0.5), the cluster is allocated to the first through-hole layer layout represented by the red layer, otherwise it is allocated to the second through-hole layer layout represented by the green layer. This method is simple and fast. If the preset allocation rule is based on feature allocation, the features of the clustering results are analyzed, and the two layers are classified according to the features of the clustering results to obtain the first through-hole layer layout and the second through-hole layer layout. For example, allocation is performed based on the size, shape, position and other features of the through-hole graphics. If the through-hole graphics in some clustering results are generally small, they can be allocated to the first through-hole layer layout represented by the red layer; and the clusters where the larger through-hole graphics are located are allocated to the second through-hole layer layout represented by the green layer. Allocation can also be performed based on the position of the through-hole graphics in the layout. For example, the layout is divided into different areas, and clusters in specific areas are assigned to the red layer, and clusters in other areas are assigned to the green layer. If the preset allocation rule is to allocate based on performance or process requirements, the classification of the through-hole graphics in the first through-hole layer layout and the second through-hole layer layout is performed considering the process requirements of the subsequent double exposure. Specifically, if a certain type of through-hole graphics can obtain better resolution or process stability by double exposure in the red layer, then the clusters with these characteristics are assigned to the first through-hole layer layout represented by the red layer. The remaining clusters are assigned to the second through-hole layer layout represented by the green layer. Allocation can also be made based on performance requirements. For example, if certain through-hole graphics are critical to specific performance indicators of the circuit and require higher precision, they can be assigned to the red layer to give more attention in the double exposure.

[0072] Step S13: performing double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively to obtain corresponding exposure processing results, so as to complete the splitting process of the quadruple layout exposure.

[0073] In this embodiment, the first through-hole layer layout and the second through-hole layer layout are respectively subjected to the first layout exposure processing by using a photolithography machine to obtain the first exposure processing result and the second exposure processing result containing the through-hole pattern after exposure respectively; the first exposure processing result and the second exposure processing result are respectively subjected to the second layout exposure processing based on the preset exposure parameters to obtain the layout splitting results after four exposure splits. It can be understood that the through-hole pattern set of the red layer, that is, the first through-hole layer layout, is determined, and the through-hole patterns of these first through-hole layer layouts are assigned to the red layer through the previous clustering process. Select a suitable photoresist material and evenly apply it on the surface of the wafer. Use a photolithography machine to perform the first exposure on the red layer. This exposure will define a part of the through-hole pattern and form a specific pattern on the photoresist. Since it is the first step of double exposure, the pattern at this time may still be fuzzy and incomplete. The wafer after the first exposure is properly processed, such as baking and other operations, to stabilize the state of the photoresist and enhance its responsiveness to subsequent exposure. Perform the second exposure of the red layer. This exposure will interact with the graphics of the first exposure to further refine and correct the through-hole graphics. By precisely controlling the exposure parameters, the through-hole graphics of the red layer can achieve higher accuracy and resolution. The double exposure process of the second through-hole layer layout is consistent with the double exposure process of the first through-hole layer layout, which will not be repeated here. After the first through-hole layer layout and the second through-hole layer layout are double-exposed, the first exposure processing result and the second exposure processing result are obtained; then, by adjusting the exposure parameters, the through-hole layer graphics in the first exposure processing result and the second exposure processing result are coordinated with each other to obtain the layout splitting result after four exposure splits, and together achieve an effect similar to quadruple exposure.

[0074] In this embodiment, after obtaining the layout splitting results after four exposure splits, it also includes: performing OPC correction on each of the layout splitting results respectively to correct and refine the layout splitting results to obtain the target layout correction results.

[0075] Reference Figure 4 As shown, Figure 4 To obtain the layout splitting result after four exposure splits according to the solution of the present invention, Figure 4 It can be seen from the results that the clustering process and the double exposure process of the present invention can obtain the four-print splitting results of red, green, orange and blue, and the time required for the four-print splitting of the present invention is Figure 3For example, the time consumed for the three-string through-hole pattern in the invention is 2×2×2 (first double exposure) + 2×2×2 (second double exposure). The time consumed for the quadruple exposure of the existing three-string through-hole pattern is 4×3×2×1×4×3×2×1×4×3×2×1=24×24×24. It can be seen that the two double exposures in the solution of the present invention can achieve the high resolution effect of the quadruple exposure while greatly reducing the time consumed.

[0076] It can be seen that the present invention provides a method for quickly splitting a through-hole layer quadruple layout, including: obtaining a through-hole layer layout with a through-hole pattern conflict and a splitting requirement for quadruple layout exposure of the through-hole layer layout; clustering the through-hole patterns of the through-hole layer layout based on the splitting requirement and according to the position proximity clustering rule to obtain the first through-hole layer layout and the second through-hole layer layout after clustering; using double layout exposure processing for the first through-hole layer layout and the second through-hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of the quadruple layout exposure. It can be seen that firstly, a through-hole layer layout with a through-hole pattern conflict and a splitting requirement for quadruple layout exposure are obtained, and based on this requirement, the through-hole patterns of the through-hole layer layout are clustered according to the position proximity clustering rule. In this way, a complex through-hole pattern set is grouped so that through-hole patterns with similar position features are divided together. The complexity of subsequent processing can be reduced because it is more efficient to operate in a smaller set of graphics with certain commonalities than to process on the entire huge through-hole layer layout. Since double exposure is performed on two relatively small first through-hole layer layouts and second through-hole layer layouts, rather than quadruple exposure on the entire through-hole layer layout, the scale of processing is greatly reduced. Traditional quadruple exposure requires four consecutive exposure operations on the entire layout, involving a lot of calculation and processing time. In the present invention, by decomposing the quadruple exposure into two parts and performing double exposure, the processing time of each part is relatively short, thereby reducing the overall time consumption. At the same time, double layout exposure processing is used for the first through-hole layer layout and the second through-hole layer layout respectively. By performing two exposures in each part and precisely controlling the exposure parameters and sequence, the through-hole pattern can be gradually defined to achieve a higher resolution and reach the same level as the entire through-hole layer layout. Figure 4 Re-exposure for the same high-resolution effect.

[0077] Reference Figure 5 As shown, the present invention accordingly discloses a fast splitting device for a through-hole layer quadruple layout, comprising:

[0078] A layout acquisition module 11 is used to acquire a through-hole layer layout with through-hole pattern conflicts and a splitting requirement for quadruple layout exposure of the through-hole layer layout;

[0079] A clustering processing module 12, configured to perform clustering processing on the through-hole patterns of the through-hole layer layout based on the splitting requirement and according to the position proximity clustering rule, so as to obtain a first through-hole layer layout and a second through-hole layer layout after clustering processing;

[0080] The double exposure module 13 is used to perform double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of the quadruple layout exposure.

[0081] It can be seen that the present invention provides a method for obtaining a through-hole layer layout with a through-hole pattern conflict and a splitting requirement for quadruple layout exposure of the through-hole layer layout; clustering the through-hole patterns of the through-hole layer layout based on the splitting requirement and according to the position proximity clustering rule to obtain the first through-hole layer layout and the second through-hole layer layout after clustering; using double layout exposure processing for the first through-hole layer layout and the second through-hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of quadruple layout exposure. It can be seen that first, a through-hole layer layout with a through-hole pattern conflict and a splitting requirement for quadruple layout exposure are obtained, and based on this requirement, the through-hole patterns of the through-hole layer layout are clustered according to the position proximity clustering rule. In this way, a complex set of through-hole patterns is grouped so that through-hole patterns with similar position features are divided together. The complexity of subsequent processing can be reduced because it is more efficient to operate in a smaller set of graphics with certain commonalities than to process on the entire huge through-hole layer layout. Since double exposure is performed on two relatively small first through-hole layer layouts and second through-hole layer layouts, rather than quadruple exposure on the entire through-hole layer layout, the scale of processing is greatly reduced. Traditional quadruple exposure requires four consecutive exposure operations on the entire layout, involving a lot of calculation and processing time. In the present invention, by decomposing the quadruple exposure into two parts and performing double exposure, the processing time of each part is relatively short, thereby reducing the overall time consumption. At the same time, double layout exposure processing is used for the first through-hole layer layout and the second through-hole layer layout respectively. By performing two exposures in each part and precisely controlling the exposure parameters and sequence, the through-hole pattern can be gradually defined to achieve a higher resolution and reach the same level as the entire through-hole layer layout. Figure 4 Re-exposure for the same high-resolution effect.

[0082] Furthermore, the present application also discloses an electronic device. Figure 6 This is a structural diagram of an electronic device 20 according to an exemplary embodiment. The content in the diagram cannot be regarded as any limitation on the scope of use of the present application.

[0083] Figure 6A schematic diagram of the structure of an electronic device 20 provided in an embodiment of the present application. The electronic device 20 may specifically include: at least one processor 21, at least one memory 22, a power supply 23, a communication interface 24, an input / output interface 25, and a communication bus 26. The memory 22 is used to store a computer program, which is loaded and executed by the processor 21 to implement the relevant steps in the method for fast splitting of a quadruple layout of a through-hole layer disclosed in any of the aforementioned embodiments. In addition, the electronic device 20 in this embodiment may specifically be an electronic computer.

[0084] In this embodiment, the power supply 23 is used to provide working voltage for each hardware device on the electronic device 20; the communication interface 24 can create a data transmission channel between the electronic device 20 and the external device, and the communication protocol it follows is any communication protocol that can be applied to the technical solution of the present application, and is not specifically limited here; the input and output interface 25 is used to obtain external input data or output data to the outside world, and its specific interface type can be selected according to specific application needs and is not specifically limited here.

[0085] Among them, the processor 21 may include one or more processing cores, such as a 4-core processor, an 8-core processor, etc. The processor 21 can be implemented in at least one hardware form of DSP (Digital Signal Processing), FPGA (Field-Programmable Gate Array), and PLA (Programmable Logic Array). The processor 21 may also include a main processor and a coprocessor. The main processor is a processor for processing data in the awake state, also known as a CPU (Central Processing Unit); the coprocessor is a low-power processor for processing data in the standby state. In some embodiments, the processor 21 may be integrated with a GPU (Graphics Processing Unit), which is responsible for rendering and drawing the content to be displayed on the display screen. In some embodiments, the processor 21 may also include an AI (Artificial Intelligence) processor, which is used to process computing operations related to machine learning.

[0086] In addition, the memory 22, as a carrier for storing resources, can be a read-only memory, a random access memory, a disk or an optical disk, etc. The resources stored thereon can include an operating system 221, a computer program 222, etc., and the storage method can be temporary storage or permanent storage.

[0087] Among them, the operating system 221 is used to manage and control the hardware devices and computer programs 222 on the electronic device 20, so as to realize the operation and processing of the massive data 223 in the memory 22 by the processor 21, which can be Windows Server, Netware, Unix, Linux, etc. In addition to including a computer program that can be used to complete the method of fast splitting of the through-hole layer quadruple layout performed by the electronic device 20 disclosed in any of the aforementioned embodiments, the computer program 222 can further include a computer program that can be used to complete other specific tasks. In addition to data transmitted from an external device received by the electronic device, the data 223 can also include data collected by its own input and output interface 25.

[0088] Furthermore, the present application also discloses a computer-readable storage medium for storing a computer program; wherein, when the computer program is executed by a processor, the aforementioned disclosed method for fast splitting of a via layer quadruple layout is implemented. The specific steps of the method can be referred to the corresponding contents disclosed in the aforementioned embodiments, and will not be repeated here.

[0089] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0090] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented with electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in terms of function in the above description. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application. The steps of the method or algorithm described in conjunction with the embodiments disclosed herein can be implemented directly with hardware, a software module executed by a processor, or a combination of the two. The software module can be placed in a random access memory RAM (Random Access Memory), memory, read-only memory ROM (Read Only Memory), electrically programmable EPROM (Electrically Programmable Read Only Memory), electrically erasable programmable EEPROM (ElectricErasable Programmable Read Only Memory), register, hard disk, removable disk, CD-ROM (CompactDisc-Read Only Memory), or any other form of storage medium known in the technical field.

[0091] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0092] The scheme provided by the present invention is introduced in detail above. Specific examples are used in this article to illustrate the principle and implementation mode of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation mode and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A method for rapidly splitting a quadruple layout of a through-hole layer, characterized in that: include: Obtaining a through-hole layer layout with through-hole pattern conflicts and splitting requirements for quadruple layout exposure of the through-hole layer layout; Based on the splitting requirement and according to the position proximity clustering rule, the through hole patterns of the through hole layer layout are clustered to obtain a first through hole layer layout and a second through hole layer layout after clustering; Performing double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively to obtain corresponding exposure processing results, so as to complete the splitting process of quadruple layout exposure; Based on the splitting requirement and according to the position proximity clustering rule, the through hole patterns of the through hole layer layout are clustered to obtain the first through hole layer layout and the second through hole layer layout after clustering, including: Calculate the Euclidean distance between two through-hole patterns according to the position information between the through-hole patterns; Based on the size relationship between each of the Euclidean distances and a preset distance threshold, corresponding cluster centers are selected, and cluster processing is performed on each of the through-hole patterns according to each of the cluster centers and the Euclidean distances to obtain a first through-hole layer layout and a second through-hole layer layout after cluster processing; Calculating the Euclidean distance between two through-hole patterns according to the position information between the through-hole patterns comprises: Selecting any one through-hole pattern from all the through-hole patterns as a current cluster center, and selecting any other through-hole pattern except the current cluster center as a through-hole pattern to be processed; Obtaining the Euclidean distance between the through-hole pattern to be processed and the current cluster center according to the distance difference between the position information of the through-hole pattern to be processed and the position information of the current cluster center; Correspondingly, based on the size relationship between each of the Euclidean distances and the preset distance threshold, the corresponding cluster centers are selected, and the through-hole patterns are clustered according to each of the cluster centers and the Euclidean distances to obtain the first through-hole layer layout and the second through-hole layer layout after clustering, including: If the Euclidean distance is greater than a preset distance threshold, updating the through-hole pattern to be processed as a new current cluster center; If the Euclidean distance is less than or equal to a preset distance threshold, the through-hole pattern to be processed is divided into clusters of the current cluster center to obtain a corresponding clustering result; Traversing each of the through-hole patterns, and taking the currently traversed through-hole pattern as the through-hole pattern to be processed, and then jumping to the step of obtaining the Euclidean distance between the through-hole pattern to be processed and the current cluster center according to the distance difference between the position information of the through-hole pattern to be processed and the position information of the current cluster center; The clustering results after traversal are allocated according to a preset allocation rule to generate a first through-hole layer layout and a second through-hole layer layout.

2. The method for rapidly splitting a quadruple layout of a through-hole layer according to claim 1, characterized in that: The process of clustering the through hole patterns of the through hole layer layout based on the splitting requirement and according to the position proximity clustering rule also includes: Determine the quadruple layout exposure area of ​​the through-hole layer layout based on the splitting requirement; Acquire all through-hole patterns and position information of corresponding through-hole patterns in the quadruple layout exposure area.

3. The method for rapidly splitting a quadruple layout of a through-hole layer according to claim 1, characterized in that: The step of allocating the clustering results after the traversal is completed according to a preset allocation rule to generate a first through-hole layer layout and a second through-hole layer layout includes: Allocate the clustering results after traversal according to a random allocation rule to generate a first through-hole layer layout and a second through-hole layer layout; Or, assigning the clustering results after traversal according to the through-hole pattern feature assignment rule to generate a first through-hole layer layout and a second through-hole layer layout; Or, the clustering results after traversal are allocated according to the exposure process allocation rule to generate the first through hole layer layout and the second through hole layer layout.

4. The method for rapidly splitting a quadruple layout of a through-hole layer according to claim 1, characterized in that: The step of performing double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively to obtain corresponding exposure processing results to complete the splitting process of the quadruple layout exposure includes: Using a photolithography machine to perform a first exposure process on the first through-hole layer layout and the second through-hole layer layout, respectively, to obtain a first exposure process result and a second exposure process result including through-hole patterns after exposure, respectively; Based on preset exposure parameters, the first exposure processing result and the second exposure processing result are respectively subjected to a second layout exposure processing to obtain a layout splitting result after four exposure splittings.

5. The method for rapidly splitting a quadruple layout of a through-hole layer according to any one of claims 1 to 4, characterized in that: After obtaining the layout splitting results after four exposure splits, it also includes: OPC correction is performed on each of the layout splitting results respectively to correct and refine the layout splitting results to obtain the target layout correction results.

6. A fast splitting device for a through-hole layer quadruple layout, characterized in that: include: A layout acquisition module, used for acquiring a through-hole layer layout with through-hole pattern conflicts and splitting requirements for quadruple layout exposure of the through-hole layer layout; A clustering processing module, used for clustering the through-hole patterns of the through-hole layer layout based on the splitting requirements and according to the position proximity clustering rule, so as to obtain the first through-hole layer layout and the second through-hole layer layout after clustering processing; A double exposure module, used for performing double layout exposure processing on the first through hole layer layout and the second through hole layer layout respectively, obtaining corresponding exposure processing results, so as to complete the splitting process of quadruple layout exposure; The cluster processing module is specifically used to calculate the Euclidean distance between two through-hole patterns according to the position information between the through-hole patterns; select the corresponding cluster centers based on the size relationship between the Euclidean distances and the preset distance threshold, and perform cluster processing on the through-hole patterns according to the cluster centers and the Euclidean distances to obtain the first through-hole layer layout and the second through-hole layer layout after cluster processing; The fast splitting device of the through-hole layer quadruple layout is also used to select any one through-hole graphic from all the through-hole graphics as the current cluster center, and select any other through-hole graphic except the current cluster center as the through-hole graphic to be processed; obtain the Euclidean distance between the through-hole graphic to be processed and the current cluster center according to the distance difference between the position information of the through-hole graphic to be processed and the position information of the current cluster center; if the Euclidean distance is greater than a preset distance threshold, update the through-hole graphic to be processed as the new current cluster center; If the Euclidean distance is less than or equal to a preset distance threshold, the through-hole graphic to be processed is divided into the cluster of the current cluster center to obtain a corresponding clustering result; each through-hole graphic is traversed, and the currently traversed through-hole graphic is used as the through-hole graphic to be processed, and then jump to the step of obtaining the Euclidean distance between the through-hole graphic to be processed and the current cluster center according to the distance difference between the position information of the through-hole graphic to be processed and the position information of the current cluster center; The clustering results after traversal are allocated according to a preset allocation rule to generate a first through-hole layer layout and a second through-hole layer layout.

7. An electronic device, characterized in that: include: Memory, used to store computer programs; A processor is used to execute the computer program to implement the steps of the method for fast splitting of a through-hole layer quadruple layout as described in any one of claims 1 to 5.

8. A computer-readable storage medium, characterized in that: Used to store computer programs; wherein, when the computer program is executed by a processor, the steps of the method for fast splitting of a through-hole layer quadruple layout as described in any one of claims 1 to 5 are implemented.

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