MOS device and method for manufacturing the same

Abstract

The present application discloses a MOS device and a preparation method thereof. The MOS device includes a substrate and a drift layer and a plurality of source regions stacked on the substrate. The MOS device also includes: a gate oxide layer, the gate oxide layer at least contacts the source region, the gate oxide layer includes a first gate oxide layer and a second gate oxide layer alternately arranged in a first direction, the first gate oxide layer and the second gate oxide layer include different first insulating materials, and the first direction is parallel to the surface of the substrate in contact with the drift layer. The MOS device includes a first gate oxide layer and a second gate oxide layer of different insulating materials, the first gate oxide layer and the second gate oxide layer are alternately arranged on a surface parallel to the substrate in contact with the drift layer, conventional gate oxide and high-K dielectric materials are used to replace a single gate oxide, the breakdown resistance property is improved, the electric field strength in the dielectric layer is reduced, the FN tunneling current is weakened, and the gate dielectric reliability is improved. This solves the problem of reliability caused by easy breakdown of gate oxide in high-voltage situations in the related art.

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