A method for preparing an LED module and an LED module

Abstract

The present invention discloses a method for preparing an LED module and an LED module. The method comprises: pressing and welding an LED chip onto a first substrate, the LED chip comprising a substrate and a chip layer, the chip layer covering the lower surface of the substrate; forming a barrier layer on the sides of the substrate and the chip layer of the LED chip; injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom filler layer; peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip; spraying phosphor on the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip to form a phosphor layer; and encapsulating the LED chip to form an encapsulation layer. The present invention effectively solves the problem of filler adhering to the wall affecting the effect of laser peeling of the substrate, while improving the spraying efficiency of the phosphor layer, thereby effectively improving the production efficiency of the LED module.

Description

Technical Field

[0001] The present invention relates to the technical field of LED modules, and in particular to a method for preparing an LED module and the LED module. Background Art

[0002] When making LED modules, it is usually necessary to perform bottom filling treatment on the bottom of the LED module to increase the contrast of the LED module and thus improve the display effect of the LED module; at the same time, it can protect the solder joints after the LED chip is bonded to the substrate, enhance the bonding strength, and play a role in supporting and resisting external stress in subsequent operations. When performing the bottom filling treatment, the filling glue is injected from the side edge of the LED chip and leveled by the siphon effect on the bottom of the entire LED module. However, there is a problem with this current bottom filling treatment process: after the filling glue fills the bottom of the LED chip, some of the filling glue will climb along the edge of the LED chip, resulting in wall hanging. When the filling glue climbs to the side and even the upper surface of the substrate of the LED chip, it will solidify and bond to the substrate after a period of time, which will form resistance in the subsequent process of peeling off the substrate, affecting the effect of laser peeling, and at the same time affecting the spraying of the phosphor layer, reducing the production efficiency of the LED module. Summary of the Invention

[0003] The purpose of the present invention is to overcome the shortcomings of the existing technology. The present invention provides a method for preparing an LED module and an LED module, which effectively solves the problem of filling glue hanging on the wall affecting the effect of laser peeling of the substrate, while improving the spraying efficiency of the phosphor layer, effectively improving the production efficiency of the LED module.

[0004] The present invention provides a method for preparing an LED module, the method comprising:

[0005] Press-welding an LED chip on a first substrate, wherein the LED chip comprises a substrate and a chip layer, and the chip layer covers a lower surface of the substrate;

[0006] forming a barrier layer on the sides of the substrate and chip layer of the LED chip;

[0007] Injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom filling layer;

[0008] Peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip;

[0009] spraying phosphor on the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip to form a phosphor layer;

[0010] The LED chip is packaged to form a packaging layer.

[0011] Furthermore, the step of press-welding the LED chip on the first substrate includes:

[0012] Aligning the first bumps of the chip layer of the LED chip with the second bumps on the first substrate one by one;

[0013] heating to melt a first solder joint on the first bump and a second solder joint on the second bump;

[0014] The first convex point after the soldering point is melted and the second convex point after the soldering point is melted are pressed and welded.

[0015] Furthermore, forming a barrier layer on the sides of the substrate and chip layer of the LED chip includes:

[0016] A barrier layer is formed on the side surface of the substrate of the LED chip and the side surface of the chip layer, or a barrier layer is formed on the side surface and upper surface of the substrate of the LED chip and the side surface of the chip layer.

[0017] Furthermore, the height of the barrier layer is 10 μm-400 μm.

[0018] Furthermore, the height of the barrier layer is greater than the height of the light-transmitting layer, and is less than or equal to the sum of the heights of the light-transmitting layer and the substrate.

[0019] Furthermore, the width of the barrier layer is less than 3 μm.

[0020] Furthermore, the barrier layer is a thermal debonding material or a UV debonding material.

[0021] Furthermore, injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom filling layer includes:

[0022] Filling material is injected into the bottom side of the chip layer of the LED chip so that the filling material fills the space between the chip layer of the LED chip and the first substrate except the first bump and the second bump.

[0023] Furthermore, peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the LED chip includes:

[0024] The LED chip is heated to debond the substrate and the barrier layer, and the substrate is peeled off based on laser lift-off to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip.

[0025] The present invention further provides an LED module, which is manufactured based on the above-mentioned method for manufacturing an LED module, and includes:

[0026] a first substrate, the first substrate carrying the chip layer, the upper surface of the first substrate being provided with a plurality of first bumps;

[0027] A chip layer, the chip layer being disposed on the first substrate, the chip layer comprising a light-transmitting layer and a plurality of second bumps, the light-transmitting layer comprising a buffer layer located on an upper layer and an N-type layer located on a lower layer, the plurality of second bumps being disposed on a lower surface of the N-type layer, and the plurality of second bumps being welded to the plurality of first bumps in a one-to-one correspondence;

[0028] a phosphor layer, the phosphor layer covering the upper surface of the light-transmitting layer;

[0029] a barrier layer, the barrier layer being arranged on outer sides of the light-transmitting layer and the phosphor layer;

[0030] a bottom filling layer, the bottom filling layer being filled between the chip layer and the first substrate, and on the outer surface of the barrier layer;

[0031] The packaging layer covers the chip layer, the barrier layer, and the bottom filling layer.

[0032] Furthermore, the height of the barrier layer is 10 μm-400 μm.

[0033] Furthermore, the width of the barrier layer is less than 3 μm.

[0034] Furthermore, the barrier layer is a thermal debonding material or a UV debonding material.

[0035] Furthermore, the bottom filling layer is black filling glue.

[0036] Furthermore, the height of the barrier layer is greater than or equal to the sum of the heights of the light-transmitting layer and the phosphor layer.

[0037] The present invention provides a preparation process of an LED module and an LED module, wherein a barrier layer is provided at the edge of a light-transmitting layer and a substrate of an LED chip, so that when bottom filling is performed, the filling glue hangs on the barrier layer instead of hanging on the substrate, effectively solving the problem that the filling glue hanging on the substrate affects the efficiency of subsequent laser stripping. At the same time, the formed barrier layer can serve as a dam for a phosphor layer, preventing the phosphor layer from escaping, improving the spraying efficiency of the phosphor layer, and effectively improving the production efficiency of the LED module. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0039] Figure 1 Schematic diagram of the structure of the LED module in the first embodiment of the present invention;

[0040] Figure 2 is a flow chart of a method for preparing an LED module in Embodiment 2 of the present invention;

[0041] Figure 3 This is a schematic structural diagram of a first semi-finished product of an LED module in the second embodiment of the present invention;

[0042] Figure 4 This is a schematic structural diagram of a second semi-finished product of an LED module in the second embodiment of the present invention;

[0043] Figure 5 This is a schematic structural diagram of the third semi-finished product of the LED module in the second embodiment of the present invention;

[0044] Figure 6 This is a schematic structural diagram of a fourth semi-finished product of an LED module in the second embodiment of the present invention;

[0045] Figure 7 This is a schematic diagram of the finished structure of the LED module in the second embodiment of the present invention. DETAILED DESCRIPTION

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0047] In the present invention, it should be understood that terms such as "include" or "have" are intended to indicate the presence of features, numbers, steps, behaviors, components, parts or their combinations disclosed in this specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, behaviors, components, parts or their combinations exist or are added.

[0048] It should also be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0049] Example 1

[0050] An embodiment of the present invention provides an LED module, which includes a first substrate, a chip layer, a phosphor layer, a barrier layer, a bottom filling layer, and an encapsulation layer.

[0051] In an optional implementation of this embodiment, as Figure 1 As shown, Figure 1 FIG2 shows a schematic structural diagram of an LED module in a first embodiment of the present invention, wherein the LED module comprises:

[0052] A first substrate 1, the first substrate 1 carries a chip layer, and a plurality of first bumps 11 are provided on the upper surface of the first substrate 1;

[0053] A chip layer, the chip layer being disposed on the first substrate 1, the chip layer comprising a light-transmitting layer and a plurality of second bumps, the light-transmitting layer comprising a buffer layer 21 located on an upper layer and an N-type layer 22 located on a lower layer, the plurality of second bumps being disposed on a lower surface of the N-type layer 22, and the plurality of second bumps being welded to the plurality of first bumps 11 in a one-to-one correspondence;

[0054] a phosphor layer 4, the phosphor layer 4 covering the upper surface of the light-transmitting layer;

[0055] a barrier layer 5, the barrier layer 5 being arranged on the outer sides of the light-transmitting layer and the phosphor layer 4;

[0056] A bottom filling layer 6, the bottom filling layer 6 is filled between the chip layer and the first substrate 1, and on the outer surface of the barrier layer 5;

[0057] The encapsulation layer 7 covers the chip layer, the barrier layer 5 and the bottom filling layer 6.

[0058] In an optional implementation of this embodiment, the first substrate 1 is a silicon CMOS substrate.

[0059] In an optional implementation of this embodiment, a plurality of first bumps 11 are provided on the upper surface of the first substrate 1, and a plurality of second bumps are provided on the lower surface of the N-type layer 22. The plurality of second bumps include P-pole bumps 23 and N-pole bumps 24. The plurality of first bumps 11 are press-welded with the P-pole bumps 23 and N-pole bumps 24 in a one-to-one correspondence.

[0060] Specifically, among the second bumps, the outermost ones are N-pole bumps 24 , and the rest in the middle are P-pole bumps 23 .

[0061] In an optional implementation of this embodiment, the N-pole protrusion 24 includes two structures. The first structure includes a light-emitting layer, a P-type layer, and an electrode layer stacked in sequence from top to bottom, and an electrical connection layer extending from the side of the electrode layer, the side of the P-type layer, the side of the light-emitting layer, and the lower surface of the N-type layer; the second structure only includes the electrode layer, and the height of the electrode layer of the second structure is the same as the sum of the heights of the light-emitting layer, the P-type layer, and the electrode layer of the first structure.

[0062] In an optional implementation of this embodiment, the P-pole bump 23 includes a light-emitting layer, a P-type layer, and an electrode layer stacked in sequence from top to bottom, and the sum of the heights of the light-emitting layer, P-type layer, and electrode layer of the P-pole bump 23 is the same as the sum of the heights of the light-emitting layer, P-type layer, and electrode layer in the first structure of the N-pole bump 24.

[0063] In an optional implementation of this embodiment, the electrode layer of the N-pole bump and the electrode layer of the P-pole bump are press-welded to the corresponding first bump.

[0064] In an optional implementation of this embodiment, the phosphor layer 4 covers the upper surface of the buffer layer 21 of the light-transmitting layer.

[0065] In an optional implementation of this embodiment, the height h of the barrier layer 5 is 10 μm-400 μm.

[0066] Specifically, the height h of the barrier layer 5 can be any value among 10 μm, 50 μm, 100 μm, 200 μm, 400 μm, etc., which is determined according to actual needs.

[0067] It should be noted that the height of the barrier layer 5 is greater than or equal to the sum of the heights of the light-transmitting layer and the phosphor layer 4 , that is, the height of the barrier layer 5 is greater than or equal to the sum of the heights of the buffer layer 21 , the N-type layer 22 and the phosphor layer 4 .

[0068] Here, the height of the barrier layer 5 is set to be greater than or equal to the sum of the heights of the light-transmitting layer and the phosphor layer 4 to prevent the highest point of the phosphor layer from exceeding the barrier layer and causing the phosphor in the phosphor layer to escape.

[0069] In an optional implementation of this embodiment, the width w of the barrier layer 5 is less than 3 μm.

[0070] Specifically, the width w of the barrier layer 5 can be any value among 1 μm, 1.5 μm, 2.5 μm, etc., which is determined according to actual needs.

[0071] It should be noted that, in order to achieve a better damming effect of the barrier layer 5 on the phosphor layer 4 , the width of the barrier layer 5 is less than 3 μm.

[0072] In an optional implementation of this embodiment, the barrier layer 5 is made of a thermal debonding material or a UV debonding material.

[0073] In an optional implementation of this embodiment, the bottom filling layer 6 is a black filling glue.

[0074] In an optional implementation of this embodiment, the encapsulation layer 7 is a transparent encapsulation glue or a dark encapsulation glue.

[0075] Specifically, in this embodiment, the encapsulation layer 7 completely covers the chip layer, the barrier layer, and the bottom filling layer. At the same time, the encapsulation layer 7 may completely cover the phosphor layer 4 or may not completely cover the phosphor layer 4. Optionally, when the encapsulation layer 7 does not completely cover the phosphor layer 4, the upper surface of the encapsulation layer 7 is flush with the upper surface of the barrier layer 5.

[0076] In summary, embodiment 1 of the present invention provides an LED module, which is provided with a barrier layer to block the filling glue that is filled and climbed up between the chip layer and the first substrate from the light-transmitting layer and the phosphor layer. At the same time, the barrier layer can serve as a dam for the phosphor layer, so that the overall structure of the LED module has better display efficiency.

[0077] Example 2

[0078] Embodiment 2 of the present invention provides a method for preparing an LED module, the method comprising: pressing and welding an LED chip on a first substrate, the LED chip comprising a substrate and a chip layer, the chip layer covering the lower surface of the substrate; forming a barrier layer on the sides of the substrate and the chip layer of the LED chip; injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom filling layer; peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip; spraying phosphor on the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip to form a phosphor layer; and encapsulating the LED chip to form an encapsulation layer.

[0079] In an optional implementation of this embodiment, as Figure 2 As shown, Figure 2 The flowchart of the method for preparing an LED module in the second embodiment of the present invention is shown, which includes the following steps:

[0080] S201, pressing and welding the LED chip onto the first substrate;

[0081] In an optional implementation of this embodiment, the LED chip includes a substrate and a chip layer, and the chip layer covers the lower surface of the substrate.

[0082] In an optional implementation of this embodiment, the first bumps of the chip layer of the LED chip are aligned one by one with the second bumps on the first substrate.

[0083] Specifically, the number of the first bumps on the chip layer of the LED chip is the same as the number of the second bumps on the first substrate, and their positions correspond one to one. Here, the first bumps on the chip layer of the LED chip are aligned one to one with the second bumps on the first substrate.

[0084] In an optional implementation of this embodiment, the first substrate is a silicon CMOS substrate.

[0085] In an optional implementation of this embodiment, heating is performed to melt the first solder joint on the first bump and the second solder joint on the second bump.

[0086] Specifically, the LED chip and the first substrate are heated to the melting temperature of the first solder joint on the first bump on the LED chip and the second solder joint on the second bump on the first substrate, so that the first solder joint on the first bump and the second solder joint on the second bump are melted.

[0087] In an optional implementation of this embodiment, the first bump after the solder joint is melted and the second bump after the solder joint is melted are press-welded.

[0088] Specifically, the first bump on the LED chip after the first solder point is melted is press-welded with the second bump on the first substrate after the second solder point is melted. After welding is completed, the press-welded LED chip and the first substrate are cooled to room temperature.

[0089] S202, forming a barrier layer on the sides of the substrate and the chip layer of the LED chip;

[0090] In an optional implementation of this embodiment, a barrier layer is formed on the side of the substrate of the LED chip and the side of the chip layer, or a barrier layer is formed on the side and upper surface of the substrate of the LED chip and the side of the chip layer.

[0091] Specifically, a barrier layer is formed on the side surface of the substrate of the LED chip and the side surface of the chip layer, and a barrier layer is also formed on the upper surface of the substrate depending on the specific situation.

[0092] In an optional implementation of this embodiment, a barrier layer is formed on the LED chip based on a 3D printing process, a spraying process, or a printing process.

[0093] Preferably, a barrier layer is formed on the LED chip based on a 3D printing process.

[0094] In an optional implementation of this embodiment, as Figure 3 As shown, Figure 3 A schematic structural diagram of the first semi-finished product of the LED module in the second embodiment of the present invention is shown. After completing step S202, the first semi-finished product of the LED module in this embodiment is obtained. The first substrate 1 includes a plurality of first bumps 11, the LED chip includes a chip layer and a substrate 3, the chip layer includes a light-transmitting layer and a plurality of second bumps, the light-transmitting layer includes a buffer layer 21 and an N-type layer 22, the plurality of second bumps include a P-pole bump 23 and an N-pole bump 24, the first bump 11 is press-welded with the P-pole bump 23 and the N-pole bump 24 in a one-to-one correspondence, and a barrier layer 5 is provided on the side of the light-transmitting layer, i.e., the buffer layer 21 and the N-type layer 22, and the substrate 3.

[0095] In an optional implementation of this embodiment, the height h of the barrier layer 5 is 10 μm-400 μm.

[0096] Specifically, the height h of the barrier layer 5 can be any value among 10 μm, 50 μm, 100 μm, 200 μm, 400 μm, etc., which is determined according to actual needs.

[0097] It should be noted that the height of the barrier layer 5 is greater than the height of the light-transmitting layer, and is less than or equal to the sum of the heights of the light-transmitting layer and the substrate 3.

[0098] Specifically, the height of the barrier layer 5 is greater than the sum of the heights of the buffer layer 21 and the N-type layer 22, and needs to be less than or equal to the height of the LED chip, that is, less than or equal to the sum of the heights of the buffer layer 21, the N-type layer 22 and the substrate 3. In this embodiment, the height of the LED chip selected is 400 μm, so the height of the barrier layer 5 is less than 400 μm.

[0099] Furthermore, in this embodiment, after the bottom filling is subsequently performed, the filling glue climbs up the barrier layer 5 to a height of 10 μm to 200 μm, so the height of the barrier layer 5 is greater than 10 μm.

[0100] In an optional implementation of this embodiment, the width w of the barrier layer 5 is less than 3 μm.

[0101] Specifically, the width w of the barrier layer 5 can be any value among 1 μm, 1.5 μm, 2.5 μm, etc., which is determined according to actual needs.

[0102] It should be noted that in order to achieve a better damming effect of the barrier layer 5 on the subsequently formed phosphor layer, the width of the barrier layer 5 is less than 3 μm.

[0103] In an optional implementation of this embodiment, the barrier layer 5 is made of a thermal debonding material or a UV debonding material.

[0104] S203, injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom fill layer;

[0105] In an optional implementation of this embodiment, filler is injected into the bottom side of the chip layer of the LED chip, and the filler fills the space between the LED chip and the first substrate except the first bump and the second bump due to siphon effect.

[0106] In an optional implementation of this embodiment, the bottom filling layer 6 is a black filling glue.

[0107] In an optional implementation of this embodiment, as Figure 4 As shown, Figure 4 A schematic structural diagram of the second semi-finished product of the LED module in the second embodiment of the present invention is shown. After completing step S203, the second semi-finished product of the LED module in this embodiment is obtained. A bottom filling layer 6 is formed between the N-type layer 22 and the first substrate 1. The bottom filling layer 6 fills the gap between the N-type layer 22 and the first substrate 1 except for the first bump 11 and the second bump, including the P-pole bump 23 and the N-pole bump 24. In addition, the filling glue in the bottom filling layer 6 climbs up and hangs on the wall along the barrier layer 5 and adheres to the outside of the barrier layer 5.

[0108] S204, peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the LED chip;

[0109] In an optional implementation of this embodiment, the LED chip is heated to debond the substrate and the barrier layer, and the substrate is peeled off based on laser stripping to expose the light-emitting surface of the light-transmitting layer of the LED chip.

[0110] Specifically, after the LED chip reaches a certain temperature by heating, the substrate of the LED chip and the barrier layer are debonded.

[0111] Furthermore, after the substrate and barrier layer of the LED chip are debonded by heating, a laser is irradiated on the substrate and chip layer to peel the substrate off the chip layer, thereby exposing the upper surface of the light-transmitting layer of the chip layer of the LED chip, i.e., the light-emitting surface of the light-transmitting layer.

[0112] In an optional implementation of this embodiment, the LED chip is irradiated with UV light to debond the substrate and the barrier layer, and the substrate is peeled off based on laser stripping to expose the light-emitting surface of the light-transmitting layer of the LED chip.

[0113] In an optional implementation of this embodiment, since the material used to form the barrier layer is a colloid with a certain hardness, the barrier layer will not collapse after the substrate is peeled off.

[0114] In an optional implementation of this embodiment, as Figure 5 As shown, Figure 5 FIG. 1 shows a schematic structural diagram of the third semi-finished product of the LED module in the second embodiment of the present invention. After completing step S204, the third semi-finished product of the LED module in this embodiment is obtained. Figure 5 As shown, after the substrate 3 is peeled off, an area surrounded by the barrier layer 5 as a dam is formed. The bottom surface of this area is the light-emitting surface of the light-transmitting layer, that is, the upper surface of the buffer layer 21.

[0115] S205, spraying phosphor on the light-emitting surface of the light-transmitting layer of the LED chip to form a phosphor layer;

[0116] In an optional implementation of this embodiment, phosphor is sprayed on the light-emitting surface of the light-transmitting layer of the LED chip, i.e., the upper surface of the buffer layer 21, and in the area enclosed by the barrier layer as a dam to form a phosphor layer.

[0117] In an optional implementation of this embodiment, as Figure 6 As shown, Figure 6 A schematic structural diagram of the fourth semi-finished product of the LED module in the second embodiment of the present invention is shown. After completing step S205, the fourth semi-finished product of the LED module in this embodiment is obtained, and phosphor powder is sprayed between the dams formed by the barrier layer 5 to form a phosphor powder layer 4.

[0118] It should be noted that the height of the barrier layer 5 is greater than or equal to the sum of the heights of the light-transmitting layer and the phosphor layer 4 , that is, the height of the barrier layer 5 is greater than or equal to the sum of the heights of the buffer layer 21 , the N-type layer 22 and the phosphor layer 4 .

[0119] Here, the height of the barrier layer 5 needs to be greater than the sum of the heights of the light-transmitting layer and the phosphor layer to prevent the phosphor in the phosphor layer 4 from escaping.

[0120] S206: Encapsulate the LED chip to form an encapsulation layer.

[0121] In an optional implementation of this embodiment, the light-transmitting layer, the barrier layer, and the bottom filling layer are encapsulated to form an encapsulation layer.

[0122] In an optional implementation of this embodiment, the encapsulation layer is a transparent encapsulation glue or a dark encapsulation glue.

[0123] In an optional implementation of this embodiment, the encapsulation layer may completely cover the phosphor layer, or may not completely cover the phosphor layer.

[0124] In an optional implementation of this embodiment, as Figure 7 As shown, Figure 7 A schematic structural diagram of a finished LED module in the second embodiment of the present invention is shown. After completing step S206, the finished LED module in this embodiment is obtained. The encapsulation layer 7 encapsulates the light-transmitting layer, including the buffer layer 21 and the N-type layer 22, as well as the phosphor layer 4, the barrier layer 5, and the bottom filling layer 6, to form a finished LED module.

[0125] In summary, embodiment 2 of the present invention provides a method for preparing an LED module, in which a barrier layer is set at the edge of the substrate of the LED chip, so that when filling the bottom, the filling glue hangs on the barrier layer instead of hanging on the substrate, effectively solving the problem of the filling glue hanging on the substrate affecting the subsequent laser stripping efficiency. At the same time, the formed barrier layer can serve as a dam for the phosphor layer to prevent the phosphor layer from escaping, improve the spraying efficiency of the phosphor layer, and effectively improve the production efficiency of the LED module.

[0126] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium, which may include: read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.

[0127] In addition, the embodiments of the present invention are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A method for preparing an LED module, characterized in that: The method comprises: Press-welding an LED chip on a first substrate, wherein the LED chip comprises a substrate and a chip layer, and the chip layer covers a lower surface of the substrate; forming a barrier layer on the sides of the substrate and chip layer of the LED chip; Injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom filling layer; Peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip; The height of the barrier layer is greater than the height of the light-transmitting layer, and is less than or equal to the sum of the heights of the light-transmitting layer and the substrate; The barrier layer is a thermal debonding material, and the step of peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip comprises: heating the LED chip to debond the substrate from the barrier layer, and peeling off the substrate by laser lift-off to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip; Or the barrier layer is a UV debonding material, and peeling off the substrate of the LED chip to expose the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip comprises: irradiating the LED chip with UV light to debond the substrate from the barrier layer, and peeling off the substrate based on laser stripping to expose the light-emitting surface of the light-transmitting layer of the LED chip; spraying phosphor on the light-emitting surface of the light-transmitting layer of the chip layer of the LED chip to form a phosphor layer; The LED chip is packaged to form a packaging layer.

2. The method for preparing an LED module according to claim 1, wherein: The step of pressing and welding the LED chip onto the first substrate comprises: Aligning the first bumps of the chip layer of the LED chip with the second bumps on the first substrate one by one; heating to melt a first solder joint on the first bump and a second solder joint on the second bump; The first convex point after the soldering point is melted and the second convex point after the soldering point is melted are pressed and welded.

3. The method for preparing an LED module according to claim 1, wherein: The forming of a barrier layer on the sides of the substrate and the chip layer of the LED chip comprises: A barrier layer is formed on the side surface of the substrate of the LED chip and the side surface of the chip layer, or a barrier layer is formed on the side surface and upper surface of the substrate of the LED chip and the side surface of the chip layer.

4. The method for preparing an LED module according to claim 1, wherein: The height of the barrier layer is 10 μm-400 μm.

5. The method for preparing an LED module according to claim 1, wherein: The width of the barrier layer is less than 3 μm.

6. The method for preparing an LED module according to claim 1, wherein: Injecting a filler between the chip layer of the LED chip and the first substrate to form a bottom filling layer includes: Filling material is injected into the bottom side of the chip layer of the LED chip so that the filling material fills the space between the chip layer of the LED chip and the first substrate except the first bump and the second bump.

7. An LED module, characterized in that: The LED module is manufactured based on the method for manufacturing the LED module according to any one of claims 1 to 6, and the LED module comprises: a first substrate, the first substrate carrying the chip layer, the upper surface of the first substrate being provided with a plurality of first bumps; A chip layer, the chip layer being disposed on the first substrate, the chip layer comprising a light-transmitting layer and a plurality of second bumps, the light-transmitting layer comprising a buffer layer located on an upper layer and an N-type layer located on a lower layer, the plurality of second bumps being disposed on a lower surface of the N-type layer, and the plurality of second bumps being welded to the plurality of first bumps in a one-to-one correspondence; a phosphor layer, the phosphor layer covering the upper surface of the light-transmitting layer; a barrier layer, the barrier layer being arranged on outer sides of the light-transmitting layer and the phosphor layer; a bottom filling layer, the bottom filling layer being filled between the chip layer and the first substrate, and on the outer surface of the barrier layer; The packaging layer covers the chip layer, the barrier layer, and the bottom filling layer.

8. The LED module according to claim 7, wherein: The bottom filling layer is black filling glue.

9. The LED module according to claim 7, wherein: The height of the barrier layer is greater than or equal to the sum of the heights of the light-transmitting layer and the phosphor layer.

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