Silicon carbide crystal growth device capable of automatically replenishing silicon

Abstract

The present invention provides a silicon carbide crystal growth device capable of automatically replenishing silicon, which belongs to the field of crystal growth. The device is provided with a graphite tube and a silicon replenishing tube slidably connected to the graphite tube on the bottom wall of a graphite crucible, and a first air hole and a second air hole are respectively opened on the graphite tube and the silicon replenishing tube, and a lifting motor drives a lifting rod to drive the silicon replenishing tube to slide up and down, thereby effectively controlling the connection and disconnection of the first air hole and the second air hole. In the early stage of crystal growth, the first air hole and the second air hole are controlled to be disconnected to prevent the silicon gas phase in the silicon replenishing tube from entering the graphite crucible through the second air hole and the first air hole in sequence. In the middle and late stages of crystal growth, the first air hole and the second air hole are controlled to be connected, so that the silicon gas phase in the silicon replenishing tube enters the graphite crucible through the second air hole and the first air hole in sequence for silicon replenishment. In this way, the silicon replenishment can be controlled, thereby ensuring the growth quality of the silicon carbide crystal.

Description

Technical Field

[0001] The invention relates to the field of crystal growth, and in particular to a silicon carbide crystal growth device capable of automatically replenishing silicon. Background Art

[0002] In the existing silicon carbide crystal growth device based on the PVT method (i.e. physical vapor transport method), the silicon component in the vapor phase crystal growth component will be insufficient in the middle and late stages of crystal growth, resulting in an imbalance in the ratio of silicon component and carbon component, affecting the growth quality of the crystal. Therefore, in order to ensure the growth of the crystal in the middle and late stages, the silicon carbide crystal growth device is usually equipped with a silicon supplement structure.

[0003] However, the silicon filling structure of the existing silicon carbide crystal growth device generally has the problem of uncontrollable silicon filling, which leads to excessive silicon components in the early stage of crystal growth, affecting the growth quality of the silicon carbide crystal. Summary of the invention

[0004] The object of the present invention is to provide a silicon carbide crystal growth device capable of automatically replenishing silicon, which can make the silicon replenishment controllable, thereby improving the growth quality of the silicon carbide crystal.

[0005] The embodiment of the present invention is achieved as follows:

[0006] In a first aspect, the present invention provides a silicon carbide crystal growth device capable of automatically replenishing silicon, comprising:

[0007] Insulated room;

[0008] A heater, the heater is located in the insulation chamber;

[0009] A graphite crucible, which is used to hold silicon carbide powder. The graphite crucible is located in the insulation chamber and is surrounded by a heater;

[0010] A graphite tube, the graphite tube passes through the bottom wall of the graphite crucible and the bottom wall of the insulation chamber, and a first air hole is arranged on the side wall of the graphite tube located in the graphite crucible;

[0011] A lifting motor, the lifting motor is located outside the insulation chamber;

[0012] The silicon-filling cylinder is used to hold silicon powder. A second air hole is arranged on the side wall of the silicon-filling cylinder. The silicon-filling cylinder is slidably connected in the graphite cylinder and is connected to the lifting motor through a lifting rod. The silicon-filling cylinder is used to slide up and down under the drive of the lifting motor to connect or disconnect the first air hole and the second air hole.

[0013] In an optional embodiment, there are multiple first air holes, and there are multiple second air holes. The multiple second air holes are used to connect or disconnect with the multiple first air holes in a one-to-one correspondence.

[0014] In an optional embodiment, the first air hole extends obliquely downward from the inner wall of the graphite cylinder.

[0015] In an optional embodiment, the bottom of one end of the first air hole corresponding to the inner wall of the graphite tube is higher than the top of one end of the first air hole corresponding to the outer wall of the graphite tube.

[0016] In an optional embodiment, the diameter of one end of the inner wall of the graphite cylinder corresponding to the first air hole is equal to the diameter of one end of the outer wall of the silicon-filling cylinder corresponding to the second air hole.

[0017] In an optional embodiment, a third air hole is formed on the top wall of the graphite cylinder.

[0018] In an optional embodiment, the graphite tube is provided with a doping gas channel, the inlet of the doping gas channel is located outside the insulation chamber, the inlet of the doping gas channel is provided with a valve, the outlet of the doping gas channel is connected with the third air hole through the inner cavity of the graphite tube, when the first air hole and the second air hole are connected, the outlet of the doping gas channel is higher than the top wall of the silicon-filling tube, wherein the doping gas channel and the first air hole are not connected to each other and are staggered in the circumferential direction of the graphite tube.

[0019] In an optional embodiment, the number of the doping gas channels is plural and the channels are spaced apart along the circumference of the graphite cylinder.

[0020] In an optional embodiment, the top of the lifting rod is detachably connected to the silicon filling cylinder, and the bottom is detachably connected to the lifting motor.

[0021] In an optional embodiment, the filling height of the silicon carbide powder is less than the height of the top wall of the graphite cylinder, and the filling height of the silicon powder is less than the height of the second air hole.

[0022] The beneficial effects of the embodiments of the present invention include:

[0023] The silicon carbide crystal growth device capable of automatically replenishing silicon is provided with a graphite tube and a silicon replenishing tube slidably connected to the bottom wall of the graphite crucible, and the first air hole and the second air hole are respectively opened on the graphite tube and the silicon replenishing tube, and the lifting rod is driven by the lifting motor to drive the silicon replenishing tube to slide up and down, thereby effectively controlling the connection and disconnection of the first air hole and the second air hole. In this way, the first air hole and the second air hole can be controlled to be disconnected in the early stage of crystal growth, so as to avoid the silicon gas phase in the silicon replenishing tube from entering the graphite crucible through the second air hole and the first air hole in turn. In the middle and late stages of crystal growth, the first air hole and the second air hole are controlled to be connected, so that the silicon gas phase in the silicon replenishing tube enters the graphite crucible through the second air hole and the first air hole in turn for silicon replenishment, so that the silicon replenishment is controllable, thereby ensuring the growth quality of the silicon carbide crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 A schematic structural diagram of a silicon carbide crystal growth device capable of automatically replenishing silicon provided by an embodiment of the present invention;

[0026] Figure 2 A cross-sectional view of a graphite cylinder provided by an embodiment of the present invention at a first viewing angle, wherein the first air hole and the second air hole are disconnected;

[0027] Figure 3 A cross-sectional view of a graphite cylinder provided by an embodiment of the present invention at a first viewing angle, wherein the first air hole and the second air hole are connected;

[0028] Figure 4 A cross-sectional view of a graphite cylinder provided by an embodiment of the present invention from a second viewing angle.

[0029] Icons: 100-insulation chamber; 200-heater; 300-graphite crucible; 400-graphite cylinder; 410-first air hole; 420-third air hole; 430-doping gas channel; 432-valve; 500-silicon replenishing cylinder; 510-second air hole; 600-lifting rod; 700-lifting motor; 800-silicon carbide powder; 900-silicon powder. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0033] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0034] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0035] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In the prior art, silicon carbide crystal growth devices based on the PVT method usually have a silicon filling structure at the bottom of the crucible. However, the silicon filling operation performed by these silicon filling structures is uncontrollable. Although silicon filling can be performed in the middle and late stages of crystal growth, silicon filling will also be performed in the early stages of crystal growth (stages where silicon filling is not required), resulting in excessive silicon components in the early stages of crystal growth, and an unbalanced ratio with carbon components, which affects the quality of silicon carbide crystals.

[0037] In view of the above situation, the present invention provides a silicon carbide crystal growth device with controllable and automatic silicon replenishment, which can effectively control the on and off of the silicon material chamber and the inside of the crucible by driving the silicon material chamber to rise and fall through a motor, thereby making the silicon replenishment controllable, avoiding silicon replenishment in the early stage of crystal growth, and ensuring the growth quality of the silicon carbide crystal.

[0038] The overall structure, working principle and technical effects of the silicon carbide crystal growth device capable of automatically replenishing silicon provided by the present invention are described in detail below with reference to the accompanying drawings.

[0039] Please refer to Figure 1 , Figure 2 and Figure 3The silicon carbide crystal growth device capable of automatically replenishing silicon provided in an embodiment of the present invention comprises an insulation chamber 100, a heater 200, a graphite crucible 300, a graphite cylinder 400, a lifting motor 700, a lifting rod 600 and a silicon replenishing cylinder 500. The heater 200 is located in the insulation chamber 100. The graphite crucible 300 is used to contain silicon carbide powder 800, and the graphite crucible 300 is located in the insulation chamber 100 and is surrounded by the heater 200. The graphite cylinder 400 penetrates the bottom wall of the graphite crucible 300 and the bottom wall of the insulation chamber 100, and the side wall of the graphite cylinder 400 located in the graphite crucible 300 is provided with a first air hole 410. The lifting motor 700 is located outside the insulation chamber 100. The silicon replenishing cylinder 500 is used to hold silicon powder 900. A second air hole 510 is provided on the side wall of the silicon replenishing cylinder 500. The silicon replenishing cylinder 500 is slidably connected in the graphite cylinder 400 and is connected to the lifting motor 700 through the lifting rod 600. It is used to slide up and down under the drive of the lifting motor 700 to connect or disconnect the second air hole 510 with the first air hole 410.

[0040] The silicon carbide crystal growth device capable of automatic silicon replenishment provided in this embodiment drives the lifting rod 600 to drive the silicon replenishment tube 500 to slide up and down through the lifting motor 700, thereby effectively controlling the connection and disconnection of the first air hole 410 and the second air hole 510. In this way, the first air hole 410 and the second air hole 510 can be controlled to be disconnected in the early stage of crystal growth, so as to prevent the silicon gas phase in the silicon replenishment tube 500 from entering the graphite crucible 300 through the second air hole 510 and the first air hole 410 in sequence, thereby preventing excessive silicon components in the early stage of crystal growth. In the middle and late stages of crystal growth, the first air hole 410 and the second air hole 510 are controlled to be connected, so that the silicon gas phase in the silicon replenishment tube 500 enters the graphite crucible 300 through the second air hole 510 and the first air hole 410 in sequence for silicon replenishment, thereby ensuring the balance of silicon components and carbon components in the middle and late stages of crystal growth, thereby ensuring the growth quality of silicon carbide crystals, and the entire silicon replenishment process is controllable.

[0041] In order to ensure the efficiency of silicon filling, the number of the first air holes 410 is multiple, the number of the second air holes 510 is also multiple, and the multiple second air holes 510 are used to be connected or disconnected with the multiple first air holes 410 in a one-to-one correspondence. Further, in order to ensure the uniformity of silicon filling, the multiple first air holes 410 are arranged at intervals along the circumferential direction and axial direction of the graphite cylinder 400.

[0042] Further, in this embodiment, the number of the first air holes 410 is 4, and the 4 first air holes 410 are evenly divided into 2 groups, each group includes 2 first air holes 410, and the 2 groups of first air holes 410 are arranged at intervals along the circumference of the graphite cylinder 400, and the 2 first air holes 410 in each group are arranged at intervals along the axial direction of the graphite cylinder 400. In other embodiments, the number of the first air holes 410 can also be other, for example, it can also be 6, and the 6 first air holes 410 are evenly divided into 3 groups, and the 3 groups of first air holes 410 are arranged at intervals along the circumference of the graphite cylinder 400, or the 6 first air holes 410 are all 2 groups, and the 3 first air holes 410 in each group are arranged at intervals along the axial direction of the graphite cylinder 400.

[0043] The specific structural form of the first pore 410 can be set as needed. In this embodiment, the first pore 410 extends obliquely downward from the inner wall of the graphite tube 400, with the higher end of the first pore 410 facing the top wall of the graphite tube 400 and the lower end facing the bottom wall of the graphite crucible 300. Such a setting can make the silicon gas phase entering the graphite crucible 300 through the first pore 410 first flow obliquely downward for a preset distance and then flow upward, so as to fully mix with the carbon component in the graphite crucible 300, and further improve the growth quality of silicon carbide crystals.

[0044] The bottom of one end of the inner wall of the first pore 410 corresponding to the graphite tube 400 is higher than the top of one end of the outer wall of the first pore 410 corresponding to the graphite tube 400. This arrangement can effectively prevent the silicon carbide powder 800 from blocking the first pore 410 or passing through the first pore 410 and falling into the inner cavity of the graphite tube 400.

[0045] Furthermore, the diameter of one end of the first air hole 410 corresponding to the inner wall of the graphite cylinder 400 is equal to the diameter of one end of the second air hole 510 corresponding to the outer wall of the silicon-replenishing cylinder 500. Such an arrangement allows the second air hole 510 to better dock with the first air hole 410, ensuring that the silicon gas phase in the silicon-replenishing cylinder 500 can smoothly pass through the second air hole 510 and the first air hole 410 in sequence into the graphite crucible 300, thereby improving the efficiency of silicon replenishment.

[0046] In order to allow the silicon filling cylinder 500 to slide up and down smoothly, in this embodiment, a third air hole 420 is opened on the top wall of the graphite cylinder 400. There are a plurality of third air holes 420, which are arranged at intervals on the top wall of the graphite cylinder 400. The third air holes 420 can play a role in connecting the inner cavity of the graphite crucible 300 and the inner cavity of the graphite cylinder 400, so that the upward and downward sliding of the graphite cylinder 400 is not affected by the pressure difference and can slide up and down smoothly.

[0047] At the same time, the outer wall of the silicon-replenishing cylinder 500 and the inner wall of the graphite cylinder 400 can be provided with a tantalum carbide layer to reduce the sliding friction between the two and improve the relative sliding smoothness of the two. The tantalum carbide layer can also improve the ability of the outer wall of the silicon-replenishing cylinder 500 and the inner wall of the graphite cylinder 400 to resist silicon vapor corrosion, ensure the airtightness between the two, and prevent silicon vapor from leaking from between the two.

[0048] Furthermore, the silicon carbide crystal growth device capable of automatically replenishing silicon also has a doping function, and various required doping gases can be introduced into the graphite crucible 300. Figure 4 , the graphite tube 400 is provided with a doping gas channel 430, and the inlet of the doping gas channel 430 is located outside the insulation chamber 100 so as to connect to an external doping gas source. A valve 432 is provided at the inlet of the doping gas channel 430 to control the on and off of the doping gas. When the first air hole 410 and the second air hole 510 are connected, the outlet of the doping gas channel 430 is higher than the top wall of the silicon-replenishing tube 500, and the outlet of the doping gas channel 430 is connected to the third air hole 420 through the inner cavity of the graphite tube 400. In this way, the doping gas can enter the graphite crucible 300 after passing through the doping gas channel 430, the inner cavity of the graphite tube 400 and the third air hole 420 in sequence for doping. It can be seen that in addition to ensuring the smooth lifting and lowering of the silicon-replenishing tube 500, the third air hole 420 can also serve as part of the inflow path of the doping gas. At the same time, the setting of the doping gas channel 430 also has a certain heat insulation effect, which can reduce the sublimation degree of the silicon powder in the silicon replenishing tube 500 when the first air hole 410 and the second air hole 510 are disconnected.

[0049] It should be noted that the doping gas channel 430 and the first air hole 410 are not connected to each other and are arranged in a staggered manner in the circumferential direction of the graphite tube 400, so that the doping gas and the supplementary silicon gas phase can be prevented from affecting each other. Further, in order to improve the efficiency and uniformity of the introduction of the doping gas, the number of the doping gas channels 430 is multiple and is arranged at intervals along the circumference of the graphite tube 400. In this embodiment, there can be two doping gas channels 430, and the two doping gas channels 430 and the two groups of first air holes 410 are arranged alternately and at intervals along the circumference of the graphite tube 400.

[0050] Please refer to Figure 1 The lifting rod 600 serves as a transmission structure between the lifting motor 700 and the silicon-replenishing cylinder 500. It can adopt different connection methods as needed. In this embodiment, the top of the lifting rod 600 is detachably connected to the silicon-replenishing cylinder 500 (including but not limited to screw connection, clamping, etc.), and the bottom is detachably connected to the lifting motor 700, so as to facilitate the disassembly of the silicon-replenishing cylinder 500 and the lifting motor 700 and the maintenance of the entire device.

[0051] The working principle and process of the silicon carbide crystal growth device capable of automatically replenishing silicon are as follows:

[0052] Before starting to grow crystals, firstly, silicon carbide powder 800 is placed in the graphite crucible 300, and silicon powder 900 is placed in the silicon filling tube 500. The placement height of silicon carbide powder 800 is less than the height of the top wall of the graphite tube 400 (i.e., silicon carbide powder 800 will not cover the top wall of the graphite tube 400), and the placement height of silicon powder 900 is less than the height of the second air hole 510 (i.e., silicon powder 900 will not cover the second air hole 510).

[0053] Then the lifting motor 700 is started, and the silicon filling tube 500 is slid upward to a preset position through the lifting rod 600, at which time the second air hole 510 is disconnected from the first air hole 410 (see Figure 2 ). At the same time, the heater 200 starts to heat the graphite crucible 300, and the silicon carbide powder 800 starts to sublimate, starting the early growth of the silicon carbide crystal. At this time, the temperature at the location of the silicon filling tube 500 is relatively low, so only a small amount of the silicon powder 900 therein sublimates to form a silicon gas phase, and because the second air hole 510 is disconnected from the first air hole 410, the silicon gas phase will not enter the graphite crucible 300, so that it can prevent the excessive silicon component in the early stage of crystal growth from causing an imbalance in the ratio of silicon component and carbon component, thereby ensuring the quality of the early growth of the crystal.

[0054] When the growth of silicon carbide crystals enters the middle and late stages, the silicon component in the graphite crucible 300 begins to be insufficient, and the ratio of silicon component to carbon component in the graphite crucible 300 is unbalanced, which affects the growth quality of silicon carbide crystals. At this time, the lifting motor 700 continues to slide the silicon replenishing cylinder 500 upward through the lifting rod 600 until the second air hole 510 and the first air hole 410 are connected to each other (see Figure 3 ), at this time, the temperature at the location of the silicon filling tube 500 is relatively high, and the silicon carbide powder 800 therein sublimates in large quantities. The formed silicon gas phase can pass through the second air hole 510 and the first air hole 410 in sequence and then enter the graphite crucible 300 for silicon filling, thereby balancing the ratio of the silicon component and the carbon component in the graphite crucible 300, thereby ensuring the growth quality of the crystal and preparing high-quality silicon carbide crystals. The entire silicon filling process is controllable.

[0055] It should be noted that, in the above process, the degree of connectivity between the second pore 510 and the first pore 410 can also be adjusted as needed, and can be completely connected (the degree of connectivity is the greatest at this time, such as Figure 3 As shown), they may also be partially connected to adjust the flow of silicon gas entering the graphite crucible 300, thereby adjusting the effect of silicon supplementation.

[0056] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A silicon carbide crystal growth device capable of automatically replenishing silicon, It is characterized in that include: Insulation chamber (100); A heater (200), the heater (200) being located in the insulation chamber (100); a graphite crucible (300), the graphite crucible (300) being used to contain silicon carbide powder (800), the graphite crucible (300) being located in the insulation chamber (100) and surrounded by the heater (200); A graphite cylinder (400), the graphite cylinder (400) passing through the bottom wall of the graphite crucible (300) and the bottom wall of the insulation chamber (100), and a first air hole (410) being provided on a side wall of the graphite cylinder (400) located inside the graphite crucible (300); A lifting motor (700), the lifting motor (700) being located outside the insulation chamber (100); a silicon-replenishing cylinder (500), the silicon-replenishing cylinder (500) being used to contain silicon powder (900), a second air hole (510) being provided on a side wall of the silicon-replenishing cylinder (500), the silicon-replenishing cylinder (500) being slidably connected to the graphite cylinder (400) and connected to the lifting motor (700) via a lifting rod (600), and being used to slide up and down under the drive of the lifting motor (700) so as to connect or disconnect the second air hole (510) with the first air hole (410); A third air hole (420) is provided on the top wall of the graphite cylinder (400), and a doping gas channel (430) is provided on the graphite cylinder (400). The inlet of the doping gas channel (430) is located outside the insulation chamber (100), and a valve (432) is provided on the inlet of the doping gas channel (430). The outlet of the doping gas channel (430) is connected with the third air hole (420) through the inner cavity of the graphite cylinder (400). When the first air hole (410) and the second air hole (510) are connected, the outlet of the doping gas channel (430) is higher than the top wall of the silicon-compensating cylinder (500), wherein the doping gas channel (430) and the first air hole (410) are not connected to each other and are staggered in the circumferential direction of the graphite cylinder (400).

2. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 1, It is characterized in that The number of the first air holes (410) is plural, the number of the second air holes (510) is also plural, and the plurality of second air holes (510) are used to be connected or disconnected with the plurality of first air holes (410) in a one-to-one correspondence.

3. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 1, It is characterized in that The first air hole (410) extends obliquely downward from the inner wall of the graphite cylinder (400).

4. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 3, It is characterized in that The bottom of one end of the first air hole (410) corresponding to the inner wall of the graphite cylinder (400) is higher than the top of one end of the first air hole (410) corresponding to the outer wall of the graphite cylinder (400).

5. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 3, It is characterized in that The diameter of one end of the first air hole (410) corresponding to the inner wall of the graphite cylinder (400) is equal to the diameter of one end of the second air hole (510) corresponding to the outer wall of the silicon-replenishing cylinder (500).

6. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 1, It is characterized in that The doping gas channels (430) are multiple in number and are arranged at intervals along the circumference of the graphite cylinder (400).

7. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 1, It is characterized in that The top of the lifting rod (600) is detachably connected to the silicon-replenishing cylinder (500), and the bottom of the lifting rod (600) is detachably connected to the lifting motor (700).

8. The silicon carbide crystal growth device capable of automatically replenishing silicon according to claim 1, It is characterized in that The height at which the silicon carbide powder (800) is contained is less than the height at which the top wall of the graphite cylinder (400) is located, and the height at which the silicon powder (900) is contained is less than the height at which the second air hole (510) is located.

Images