A device and method for depositing high-purity quartz ring

Abstract

The present invention discloses a device and method for depositing a high-purity quartz ring, including a deposition reactor, a burner, a support core rod, a support member and a deposition substrate; a reaction chamber is arranged in the deposition reactor, an opening is arranged at the top of the deposition reactor, and the burner is fixedly installed at the top of the deposition reactor; the lower part of the support core rod is arranged in the reaction chamber, and the upper part extends out of the opening at the top of the deposition reactor; the support member is provided with a groove, the bottom end of the support core rod extends into the groove, and the bottom of the support member is connected to a rotating lifting mechanism; the deposition substrate is sleeved on the support core rod, and the bottom surface of the deposition substrate is in contact with and connected to the top surface of the support member. The present invention arranges a support core rod in the deposition reactor, sleeves the deposition substrate on the support core rod, realizes the preparation of a non-solid core deposition wheel, facilitates the manufacturing and processing of quartz ring products, improves production efficiency, reduces material waste, and reduces production costs; a carbon coating layer is arranged on the surface of the support core rod, which facilitates the withdrawal of the support core rod from the deposition wheel.

Description

Technical Field

[0001] The invention relates to the technical field of high-purity quartz ring preparation, and in particular to a device and method for depositing a high-purity quartz ring. Background Art

[0002] High-purity quartz is the raw material for high-end quartz products and one of the basic materials in the semiconductor industry. However, not all quartz can be used in the semiconductor field. There are three main semiconductor products: photovoltaics, panels, and integrated circuits. The purity requirements for silicon wafers for these three products are not of the same order of magnitude. For example, the purity requirement for photovoltaics is 99.9999%, while the purity requirement for chips is 99.999999999%. The difficulty can be imagined, in order. Among them, the etching process in integrated circuits is a more complex and very important step in semiconductor technology. It is a main process for pattern processing associated with photolithography, and high-purity quartz rings are used for this. "Photolithography" is to expose the photoresist to photolithography (equivalent to "drawing" the circuit diagram on the wafer by projection), and "etching" is to remove unnecessary materials from the surface of the silicon wafer along the pattern developed on the surface of the photoresist by chemical or physical methods, thereby engraving the circuit diagram on the wafer. In this process, the high-purity quartz ring mainly plays a protective role. Its combination with the quartz gate can achieve airtight protection of the cavity. It tightly surrounds the wafer and prevents various types of pollution during the etching manufacturing process. Therefore, the purity of the quartz ring itself is crucial.

[0003] At present, the preparation route of conventional quartz rings is mostly to use a gas refining process to first melt a round rod-shaped ingot and then put it into a quartz ring or directly form a ring in a specific mold through an electric melting process. Due to the process characteristics, its purity level is generally average, which seriously restricts the high-end application of quartz ring products. In the industry, high-purity synthetic quartz is mainly prepared by CVD and VAD. Since it is made by high-temperature hydrolysis and melting of higher-purity raw materials, the purity level is higher. Compared with VAD deposition, the product size of CVD deposition is larger. Therefore, CVD is more suitable for preparing quartz ring products with an inner diameter of more than 300mm.

[0004] In the prior art, the diameter of the ingot product deposited by CVD is generally 350-800mm, and it is a solid round rod. The preparation of the quartz ring is basically to first use the ingot to remove the inner core through a drilling machine, and then the remaining outer ring is segmented in length and processed into inner and outer circles to the inner and outer diameters of the quartz ring product. This preparation method for preparing quartz rings has low material utilization and high ring product cost. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a device and method for depositing high-purity quartz rings. By arranging a supporting core rod in a CAD deposition reactor and sleeve-mounting a deposition substrate on the supporting core rod, the preparation of a coreless deposition ingot is realized, which facilitates the manufacturing and processing of quartz ring products, improves production efficiency, reduces material waste, and reduces production costs. At the same time, the diameter of the supporting core rod can be adjusted according to the inner diameter size of the quartz ring product.

[0006] In order to solve the above technical problems, the present invention provides, on one hand, a device for depositing a high-purity quartz ring, comprising a deposition reaction furnace, a burner, a supporting core rod, a supporting member and a deposition substrate;

[0007] A reaction chamber is arranged in the deposition reaction furnace, an opening is arranged at the top of the deposition reaction furnace, and a furnace bottom opening is arranged at the bottom of the deposition reaction furnace;

[0008] The burner is fixedly mounted on the top of the deposition reactor, and the burner port extends into the reaction chamber and is tilted toward the central axis of the reaction chamber;

[0009] The lower part of the support core rod is arranged in the reaction chamber, and the upper part of the support core rod extends out from the opening at the top of the deposition reaction furnace;

[0010] The support member is provided with a groove with an opening facing upward, the bottom end of the support core rod extends into and is fixed in the groove, and the bottom of the support member is connected to a rotating lifting mechanism;

[0011] The deposition substrate is sleeved on the supporting core rod, and the bottom surface of the deposition substrate is in contact with and connected to the top surface of the supporting member.

[0012] The present invention arranges a support core rod in a deposition reactor and sleeves a deposition substrate. The support core rod passes through the top opening of the deposition reactor from top to bottom and enters the reaction chamber, passes through the deposition substrate and penetrates into the groove of the support member, and the support member realizes the support, rotation and lifting of the support core rod and the deposition substrate. The deposition substrate provides a basic production surface for the deposition reaction. During the deposition process, the support core rod and the deposition substrate rotate and descend synchronously to prepare a uniform deposition wheel without a solid core, thereby avoiding the problems of low work efficiency, low material utilization rate and high cost caused by depositing a solid round rod and then taking out the inner core through a drilling machine in the prior art. The upper end of the support core rod extends out of the deposition reactor and gradually descends with the deposition, thereby avoiding the problem that the deposition reactor is too large in volume and the reaction chamber is too large, and the utilization rate of the deposition raw materials is low due to the overall placement in the deposition reactor. The support core rod is supported and fixed by a support member with a groove, so the structure is more stable and the support effect is better. The design of the bottom opening at the bottom of the deposition reactor facilitates the removal of the deposition wheel product.

[0013] Furthermore, a flange cover is installed at the top opening of the deposition reactor, and the flange cover is sleeved on the supporting core rod, so that the sealing between the deposition reactor and the supporting core rod is achieved through the flange cover.

[0014] Furthermore, a carbon coating is provided on the surface of the supporting core rod, and the thickness of the carbon coating is 1-3 mm. Due to the difference in thermal expansion coefficients between the carbon coating and the deposited quartz, a certain gap is formed between the two after cooling and shrinkage, which facilitates the removal of the supporting core rod after the deposition is completed.

[0015] Furthermore, the number of the burners is more than two, the burners are evenly arranged on the top of the deposition reaction furnace, and the angle between the axis of the burner and the axis of the deposition reaction furnace is 1°-3°.

[0016] Furthermore, a plurality of exhaust gas channels are evenly arranged around the deposition reaction furnace, the deposition reaction furnace is a deposition reaction chamber, and the reaction exhaust gas is discharged through the exhaust gas channel arranged in the axial direction of the deposition reaction furnace.

[0017] Furthermore, the burner is made of quartz, and the support core rod is made of corundum mullite or high-temperature ceramics. The high-temperature ceramics refer to ceramic materials with a melting temperature above the melting point of silicon oxide (1728°C), such as Al2O3, ZrO, MgO, CaO, carbide ceramics, boride ceramics, nitride ceramics and silicide ceramics.

[0018] A second aspect of the present invention provides a method for depositing a high-purity quartz ring, using the device described in the first aspect, comprising the following steps:

[0019] S1, introducing hydrogen and oxygen into the burner, and introducing silicon source after the deposition reaction furnace is heated to the deposition reaction temperature;

[0020] S2, the silicon source undergoes a hydrolysis reaction and melts at high temperature to form nano-scale silicon dioxide, which is deposited on the surface of a deposition substrate sleeved on a supporting core rod;

[0021] S3, the rotary lifting mechanism drives the deposition substrate and the supporting core rod to rotate through the supporting member, and drives the deposition substrate and the supporting core rod to continuously descend as the deposition reaction proceeds and the deposition mass grows;

[0022] S4. After the deposition is completed and the furnace is cooled, the supporting core rod located in the center of the deposition mass is pulled out to obtain a high-purity quartz ring.

[0023] Furthermore, in S1, the silicon source is high-purity electronic grade silicon tetrachloride.

[0024] Furthermore, in S3, during the deposition process, the distance between the upper surface of the deposition wheel and the burner port remains constant.

[0025] Furthermore, in S3, at the later stage of the deposition reaction, the introduction of the silicon source is stopped, and after the surface of the empty burner material is flattened to the upper surface of the deposition drum, the introduction of hydrogen and oxygen is stopped.

[0026] Furthermore, the temperature of the deposition reaction is above 1300° C., and the temperature of the furnace cooling is below 80° C.

[0027] Furthermore, in S4, after the support core rod is pulled out, a cold processing step of the deposition wheel is also included: the inner and outer circles of the deposition wheel are regularized to the size of the quartz ring product, and processed to the height of the quartz ring product by wire cutting.

[0028] Beneficial effects of the present invention:

[0029] The present invention arranges a supporting core rod in a CAD deposition reaction furnace, and sleeves a deposition substrate on the supporting core rod, thereby realizing the preparation of a non-solid core deposition mass, facilitating the manufacturing and processing of quartz ring products, simplifying the preparation process of quartz rings, improving production efficiency, reducing material waste, and lowering production costs; a carbon-plated layer is arranged on the surface of the supporting core rod, and after cooling and shrinkage, a certain gap is formed between the deposited quartz mass and the carbon-plated layer due to the difference in thermal expansion coefficients, which facilitates the removal of the supporting core rod; at the same time, the diameter of the supporting core rod can be adjusted according to the inner diameter size of the quartz ring product, and the application range is wide. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic diagram of the structure of the device for depositing high-purity quartz rings of the present invention;

[0031] Explanation of the numbers in the figure: 1. deposition reaction furnace, 2. burner, 3. supporting core rod, 4. supporting member, 5. deposition substrate, 6. furnace bottom, 7. rotating lifting mechanism, 8. deposition weight, 9. carbon coating layer, 10. flange top cover, 11. exhaust gas channel. DETAILED DESCRIPTION

[0032] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0033] Reference Figure 1As shown, the present embodiment is a device for depositing a high-purity quartz ring, comprising a deposition reactor 1, a burner 2, a support core rod 3, a support member 4 and a deposition substrate 5; a reaction chamber is arranged in the deposition reactor 1, an opening is arranged at the top of the deposition reactor 1, and a furnace bottom opening 6 is arranged at the bottom of the deposition reactor 1; the burner 2 is fixedly mounted on the top of the deposition reactor 1, and the lamp mouth of the burner 2 extends into the reaction chamber and is inclined toward the central axis direction of the reaction chamber; the lower part of the support core rod 3 is arranged in the reaction chamber, and the upper part of the support core rod 3 extends out of the opening at the top of the deposition reactor 1; the support member 4 is provided with a groove with an opening facing upward, the bottom end of the support core rod 3 extends into and is fixed in the groove, and the bottom of the support member 4 is connected to a rotating lifting mechanism 7; the deposition substrate 5 is sleeved on the support core rod 3, and the bottom surface of the deposition substrate 5 is in contact and connected with the top surface of the support member 4.

[0034] In this embodiment, a support core rod 3 is arranged in the deposition reactor 1 and a deposition substrate 5 is sleeved thereon. The support core rod 3 passes through the top opening of the deposition reactor 1 from top to bottom and enters the reaction chamber, passes through the deposition substrate 5 and penetrates into the groove of the support member 4. The support core rod 3 and the deposition substrate 5 are supported, rotated and lifted by the support member 4. The deposition substrate 5 provides a basic production surface for the deposition reaction. During the deposition process, the support core rod 3 and the deposition substrate 5 rotate and descend synchronously to prepare a uniform deposition wheel 8 without a solid core, thereby avoiding the problems of low work efficiency, low material utilization rate and high cost caused by depositing a solid round rod and then taking out the inner core through a drilling machine in the prior art. The upper end of the support core rod 3 extends out of the deposition reactor 1 and gradually descends with the deposition, thereby avoiding the problem of the deposition reactor 1 being too large in volume and the resulting reaction chamber being too large, and the deposition raw material utilization rate being low due to the overall placement in the deposition reactor 1. The support core rod 3 is supported and fixed by the support member 4 with a groove, and the structure is more stable and the support effect is better. The design of the bottom opening at the bottom of the deposition reactor 1 facilitates the removal of the deposition wheel 8 product.

[0035] Preferably, a carbon coating layer 9 is provided on the surface of the supporting core rod 3, and the thickness of the carbon coating layer 9 is 1-3 mm. Due to the difference in thermal expansion coefficients between the carbon coating layer 9 and the deposited quartz, a certain gap is formed between the two after cooling and shrinkage, which facilitates the removal of the supporting core rod 3 after the deposition is completed.

[0036] Preferably, the number of the burners 2 is more than two, and the burners 2 are evenly arranged on the top of the deposition reaction furnace 1, and the angle between the axis of the burner 2 and the axis of the deposition reaction furnace 1 is 1-3°.

[0037] Preferably, a flange top cover 10 is installed at the top opening of the deposition reactor 1, and the flange top cover 10 is sleeved on the supporting core rod 3. The flange top cover 10 is used to achieve sealing between the deposition reactor 1 and the supporting core rod 3. The supporting core rod 3 placed on the outside of the deposition reactor 1 can be sealed and protected by a sealing outer cover to prevent pollution; a plurality of exhaust gas channels 11 are evenly arranged on the circumference of the deposition reactor 1. The deposition reactor 1 is a deposition-enhanced reaction chamber, and the reaction exhaust gas is discharged through the exhaust gas channel 11 arranged axially of the deposition reactor 1.

[0038] Preferably, the burner 2 is made of quartz, and the support core rod 3 is made of corundum mullite or high-temperature ceramics. The high-temperature ceramics refer to ceramic materials with a melting temperature above the melting point of silicon oxide (1728°C), such as Al2O3, ZrO, MgO, CaO, carbide ceramics, boride ceramics, nitride ceramics and silicide ceramics.

[0039] Another embodiment provides a method for depositing a high-purity quartz ring, using the above-mentioned device for depositing a high-purity quartz ring, comprising the following steps:

[0040] S1, introducing hydrogen and oxygen into the burner 2, and introducing high-purity electronic grade silicon tetrachloride as a silicon source after the deposition reaction furnace 1 is heated to the deposition reaction temperature;

[0041] S2, the silicon source undergoes a hydrolysis reaction and melts at high temperature to form nano-scale silicon dioxide, which is deposited on the surface of a deposition substrate 5 sleeved on a supporting core rod 3;

[0042] S3, the rotary lifting mechanism 7 drives the deposition substrate 5 and the support core rod 3 to rotate through the support member 4, and drives the deposition substrate 5 and the support core rod 3 to continuously descend as the deposition reaction proceeds and the deposition mass grows;

[0043] S4. After the deposition is completed and the furnace is cooled, the supporting core rod 3 located at the center of the deposition wheel is pulled out to obtain a high-purity quartz ring.

[0044] Preferably, in S3, during the deposition process, the distance between the upper surface of the deposition wheel 8 and the lamp mouth of the burner 2 remains constant. In the later stage of the deposition reaction, the silicon source is stopped from being introduced. After the empty burning surface is flattened until the upper surface of the deposition wheel is flat, the introduction of hydrogen and oxygen is stopped. The temperature of the deposition reaction is above 1300°C.

[0045] Preferably, the furnace cooling temperature is below 80° C., and after the support core rod 3 is pulled out, a cold processing step of the deposition wheel is also included: the inner and outer circles of the deposition wheel are regularized to the size of the quartz ring product, and processed to the height of the quartz ring product by wire cutting.

[0046] In summary, the present invention arranges a supporting core rod in the CAD deposition reactor, and sleeves the deposition substrate on the supporting core rod, thereby realizing the preparation of a non-solid core deposition mass, facilitating the manufacturing and processing of the quartz ring product, simplifying the preparation process of the quartz ring, improving production efficiency, reducing material waste, and reducing production costs; a carbon-plated layer is arranged on the surface of the supporting core rod, and after cooling and shrinking, due to the difference in thermal expansion coefficients of the deposited quartz mass and the carbon-plated layer, a certain gap is formed between the two, which is convenient for the support core rod to be removed; at the same time, the diameter of the supporting core rod can be adjusted according to the inner diameter size of the quartz ring product, and the application range is wide.

[0047] The above-described embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or changes made by those skilled in the art based on the present invention are within the protection scope of the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. A device for depositing high-purity quartz rings, characterized in that: It includes a deposition reaction furnace, a burner, a supporting core rod, a supporting member and a deposition substrate; A reaction chamber is arranged in the deposition reaction furnace, an opening is arranged at the top of the deposition reaction furnace, and a furnace bottom opening is arranged at the bottom of the deposition reaction furnace; The burner is fixedly mounted on the top of the deposition reactor, and the burner port extends into the reaction chamber and is tilted toward the central axis of the reaction chamber; The lower part of the support core rod is arranged in the reaction chamber, and the upper part of the support core rod extends out from the opening at the top of the deposition reaction furnace; The support member is provided with a groove with an opening facing upward, the bottom end of the support core rod extends into and is fixed in the groove, and the bottom of the support member is connected to a rotating lifting mechanism; The deposition substrate is sleeved on the support core rod, and the bottom surface of the deposition substrate is in contact with and connected to the top surface of the support member; A carbon coating layer is arranged on the surface of the supporting core rod, and the thickness of the carbon coating layer is 1-3 mm.

2. The device for depositing high-purity quartz rings according to claim 1, characterized in that: A flange top cover is installed at the top opening of the deposition reaction furnace, and the flange top cover is sleeved on the supporting core rod.

3. The device for depositing high-purity quartz rings according to claim 1, characterized in that: The number of the burners is more than two, and the burners are evenly arranged on the top of the deposition reaction furnace. The angle between the axis of the burner and the axis of the deposition reaction furnace is 1°-3°.

4. The device for depositing a high-purity quartz ring according to claim 1, characterized in that: A plurality of exhaust gas passages are evenly arranged around the deposition reaction furnace.

5. A method for depositing a high-purity quartz ring, using the device according to any one of claims 1 to 4, characterized in that: The steps include: S1, introducing hydrogen and oxygen into the burner, and introducing silicon source after the deposition reaction furnace is heated to the deposition reaction temperature; S2, the silicon source undergoes a hydrolysis reaction and melts at high temperature to form nano-scale silicon dioxide, which is deposited on the surface of a deposition substrate sleeved on a supporting core rod; S3, the rotary lifting mechanism drives the deposition substrate and the supporting core rod to rotate through the supporting member, and drives the deposition substrate and the supporting core rod to continuously descend as the deposition reaction proceeds and the deposition mass grows; S4. After the deposition is completed and the furnace is cooled, the supporting core rod located at the center of the deposition mass is pulled out to obtain a high-purity quartz ring; In S3, during the deposition process, the distance between the upper surface of the deposition wheel and the burner port remains constant; The temperature of the deposition reaction is above 1300° C., and the temperature of the furnace cooling is below 80° C.

6. The method for depositing a high purity quartz ring according to claim 5, characterized in that: In S3, at the later stage of the deposition reaction, the introduction of silicon source is stopped, and after the surface of the empty burner material is flattened to the top surface of the deposition drum, the introduction of hydrogen and oxygen is stopped.

7. The method for depositing a high purity quartz ring according to claim 5, characterized in that: In S4, after the support core rod is pulled out, a cold processing step of the deposition wheel is also included: the inner and outer circles of the deposition wheel are regularized to the size of the quartz ring product, and the deposition wheel is processed to the height of the quartz ring product through wire cutting.

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