Multiple magnetic field etching device

Abstract

The present application discloses a multiple magnetic field etching device, comprising a working chamber, a carrier, a coil, a first magnetic group and at least two layers of a second magnetic group, wherein the first magnetic group and the second magnetic group both comprise a plurality of permanent magnets spaced apart in a circumferential direction; the coil is used as an excitation magnetic field, the first magnetic group is used as a confinement magnetic field, and the second magnetic group is used as an enhancement magnetic field; the excitation magnetic field promotes plasma generation, the confinement magnetic field confines electrons around the coil, making it easier for electrons to ionize gas atoms and preventing electrons from being drawn away by the chamber wall, and the enhancement magnetic field can increase the activity of plasma near a wafer and accelerate wafer etching; the etching device provided by the present application can conveniently and effectively improve the etching efficiency and ensure the etching effect through the coordination of the triple magnetic fields.

Description

Technical Field

[0001] The present application relates to the field of wafer etching technology, and in particular to a multiple magnetic field etching device. Background Art

[0002] Plasma etching is a method of wafer surface treatment. Radio frequency inductively coupled gas discharge is one of the important ways to generate plasma. In an inductively coupled system, the electromagnetic field energy generated by the coil is gathered in a vacuum chamber, exciting gas discharge to form plasma; the positively charged ions bombard the wafer surface, which can remove the natural oxide or fluorocarbon residues on the wafer surface, and finally etch the desired shape on the wafer surface.

[0003] Silicon carbide (SiC) is a new type of compound semiconductor material with superior performance. Silicon carbide semiconductors have excellent properties such as large bandgap width (about 3 times that of silicon), high critical field strength (about 10 times that of silicon), and high thermal conductivity (about 3 times that of silicon). They are ideal semiconductor materials for making high-temperature, high-frequency and high-power power electronic devices (power chips). However, due to the influence of material properties, the etching of silicon carbide is difficult, and it is usually necessary to increase the power of the power supply to increase the activity of the particles. However, simply increasing the power of the power supply will make it difficult to control the heat of the RF coil, and additional cooling structures are required to reduce the etching temperature. The addition of three cooling mechanisms is likely to affect the etching environment. Summary of the invention

[0004] The purpose of the present application is to overcome the deficiencies in the prior art and provide a multiple magnetic field etching device.

[0005] To achieve the above technical objectives, the present application provides a multiple magnetic field etching device, including: a working chamber, used to provide space for wafer etching; a carrier, arranged in the working chamber, used to receive the wafer; a coil, arranged in the working chamber and suspended above the carrier; a first magnetic group, including a plurality of permanent magnets, the plurality of permanent magnets are arranged side by side in a circle around the working chamber, the coil is adjacent to the encirclement of the first magnetic group, or at least part of the coil is in the encirclement of the first magnetic group; at least two layers of second magnetic groups, arranged below the first magnetic group; the second magnetic group includes a plurality of permanent magnets, the plurality of permanent magnets are arranged side by side in a circle around the working chamber; at least two layers of second magnetic groups They are arranged in parallel along the vertical direction; wherein the coil is used as an excitation magnetic field, the first magnetic group is used as a confining magnetic field, and the second magnetic group is used as an enhanced magnetic field; during the etching process, the carrier carrying the wafer is close to the encirclement of the second magnetic group, or at least part of the wafer is in the encirclement of the second magnetic group; the excitation magnetic field can ionize the reaction gas and generate plasma; the confining magnetic field can confine electrons near the coil, thereby promoting ionization reaction and preventing charged particles from moving toward the cavity wall; the enhanced magnetic field can increase the activity of charged particles, by increasing the movement path of electrons and the number of particle collisions, thereby increasing the plasma concentration in the cavity.

[0006] Furthermore, the permanent magnets in the first magnetic group and the second magnetic group are arranged with one pole facing the working cavity and the other pole facing away from the working cavity; in the first magnetic group, a layer of permanent magnets arranged in a circle is arranged in an alternating magnetic form, and the magnetic poles of any two adjacent permanent magnets are in opposite directions; the multiple layers of permanent magnets in the first magnetic group and the second magnetic group are arranged in rows, and the magnetic poles of any row of permanent magnets have the same direction.

[0007] Furthermore, the multiple magnetic field etching device also includes a rotation drive mechanism, which is used to drive the first magnetic group and the second magnetic group to rotate around the longitudinal center axis of the working chamber.

[0008] Furthermore, the multiple magnetic field etching device also includes a mounting cover, which is arranged outside the working chamber and is used to install the first magnetic group and the second magnetic group; the mounting cover is made of non-magnetic material; the rotary drive mechanism includes: a rack, which is wound around the outer wall of the mounting cover; a gear, which is meshed with the rack; and a rotary drive member, which is used to drive the gear to rotate.

[0009] Furthermore, the working chamber includes: a base, a carrier is arranged in the base, and a wafer inlet and outlet are arranged on one side of the base; a connecting tube, the lower end of the connecting tube is sealed and connected to the base; an upper cover, the upper end of the connecting tube is sealed and connected to the upper cover; an etching chamber is formed between the base, the connecting tube and the upper cover; the coil is suspended in the connecting tube, and the mounting cover is sleeved outside the connecting tube.

[0010] Furthermore, the mounting cover is restricted between the base and the upper cover; a circle of first guide blocks is provided on one of the top surface of the base and the bottom surface of the mounting cover, and a circle of first slide grooves is provided on the other, the first guide block is inserted in the first slide groove, and when the mounting cover rotates, the first guide block and the first slide groove restrict each other; and / or, a circle of second guide blocks is provided on one of the bottom surface of the upper cover and the top surface of the mounting cover, and a circle of second slide grooves is provided on the other, the second guide block is inserted in the second slide groove, and when the mounting cover rotates, the second guide block and the second slide groove restrict each other; and / or, the multiple magnetic field etching device also includes a lifting drive mechanism, the lifting drive mechanism is used to drive The carrier is moved in a vertical direction; when the carrier is at a first height position, the wafer inlet and outlet are opposite to the carrier; after the carrier is driven to rise to a second height position by the lifting drive mechanism, the carrier carrying the wafer is close to the encirclement of the second magnetic group, or at least part of the wafer is in the encirclement of the second magnetic group; and / or, two rows of mounting grooves are provided on the mounting cover, and the two rows of mounting grooves are spaced apart in the vertical direction, the upper row of mounting grooves is used to install the first magnetic group, and the lower row of mounting grooves is used to install at least two layers of the second magnetic group; one row includes a plurality of mounting grooves spaced apart in the circumferential direction, and any mounting groove can accommodate a permanent magnet.

[0011] Furthermore, the multiple magnetic field etching device also includes an air intake mechanism, which is used to blow reaction gas into the working chamber; the air intake mechanism includes an air intake module, which is arranged at the top of the working chamber and can directly blow air to the coil.

[0012] Furthermore, the air intake module includes: a central connecting part, on which an air inlet is provided, and the air inlet is connected to an air supply device; a first circulation part, a second circulation part and a third circulation part, and the first circulation part, the second circulation part and the third circulation part are arranged on the central connecting part at equal intervals along the circumferential direction; wherein a confluence channel is provided in the central connecting part, and the air inlet is connected to the confluence channel; the first circulation part, the second circulation part and the third circulation part are each provided with a diversion channel, and the three groups of diversion channels are respectively connected to the confluence channel; the first circulation part, the second circulation part and the third circulation part are each provided with a plurality of air outlets, and the plurality of air outlets are arranged at intervals along the radial direction, and the air outlets are connected to the diversion channel; during the etching process, the reaction gas output by the air supply device can enter the confluence channel and the diversion channel through the air inlet, and then be blown to the coil through the air outlet.

[0013] Furthermore, the air intake mechanism also includes a lifting module, which is used to drive the air intake module to move in a vertical direction, thereby changing the relative position of the air intake module and the coil.

[0014] Furthermore, the working chamber includes an upper cover, a longitudinally extending installation channel is provided at the center of the upper cover, and an air inlet hole is provided on one side of the installation channel; the lifting module includes: a lifting drive member, which is provided outside the working chamber, and the movable end of the lifting drive member is connected to the air inlet module through the installation channel; a bellows, which is provided in the working chamber, one end of the bellows is sealedly connected to the top wall of the working chamber, and the other end is sealedly connected to the air inlet module; wherein, an air inlet is provided on the top of the air inlet module, and the reaction gas can enter the air inlet through the air inlet and along the installation channel.

[0015] The present application provides a multiple magnetic field etching device, comprising a working chamber, a carrier, a coil, a first magnetic group and at least two layers of second magnetic groups, wherein the first magnetic group and the second magnetic group both comprise a plurality of permanent magnets spaced apart in a circumferential direction; the permanent magnets in the same magnetic group are spaced apart from each other at a small distance, so that their magnetic fields can influence each other, and then radiate into the etching chamber, promoting the movement of charged particles; since the two layers of second magnetic groups are arranged adjacent to each other, their magnetic fields can also be superimposed and enhanced on each other, and then radiate to the center of the etching chamber, and while promoting the movement of charged particles, the two layers of second magnetic groups can also balance the plasma concentration at the center and the edge, and improve the uniformity of wafer etching; the coil is used as an excitation magnetic field, and can ionize the reaction gas and generate plasma; the first magnetic group is used as a confining magnetic field, and the second magnetic group is used as an enhancing magnetic field; the excitation magnetic field promotes the generation of plasma, and the confining magnetic field confines electrons around the coil, which makes it easier for the electrons to ionize gas atoms and can prevent the electrons from being led away by the cavity wall, and the enhancing magnetic field can increase the activity of plasma near the wafer and accelerate the wafer etching. The etching device provided in the present application can conveniently and effectively improve the etching efficiency and ensure the etching effect through the coordination of triple magnetic fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of a multiple magnetic field etching device provided in this application;

[0017] Figure 2 for Figure 1 A structural cross-sectional view of the multiple magnetic field etching device shown;

[0018] Figure 3 for Figure 1 A schematic diagram of the structure of the upper cover, coil and air intake mechanism in the multiple magnetic field etching device shown;

[0019] Figure 4 for Figure 1 A schematic diagram of the structure of the installation cover in the multiple magnetic field etching device shown;

[0020] Figure 5 A schematic diagram of the structure of an installation groove and an elastic member provided in the present application;

[0021] Figure 6 for Figure 1 A schematic diagram of the structure of the upper cover and the air intake mechanism in the multiple magnetic field etching device shown;

[0022] Figure 7 for Figure 6 A structural cross-sectional view of an air intake module in the air intake mechanism shown;

[0023] Figure 8 An arrangement of a first magnetic group and a second magnetic group provided in the present application;

[0024] Fig. 9A schematic diagram of a confining magnetic field provided for this application;

[0025] Fig.10 for Fig. 9 A magnified view of the structure in the middle circle;

[0026] Fig.11 A schematic diagram of enhancing the magnetic field provided in this application;

[0027] Fig.12 for Fig.11 Enlarged view of the structure in the middle circle. DETAILED DESCRIPTION

[0028] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0029] The present application provides a multiple magnetic field etching device, including: a working chamber 100, used to provide space for wafer etching; a carrier 200, arranged in the working chamber 100, used to receive the wafer; a coil 310, arranged in the working chamber 100 and suspended above the carrier 200.

[0030] For details, please refer to Figure 2 In the illustrated embodiment, a wafer inlet and outlet are provided on the left side of the working chamber 100, and a wafer handling mechanism such as a robot can transfer wafers into the working chamber 100 through the wafer inlet and outlet. The carrier 200 is provided at the bottom of the working chamber 100, and the carrier 200 is directly opposite to the wafer inlet and outlet to facilitate the wafer to be etched.

[0031] Continue to refer to Figure 2 An air intake mechanism 600 is disposed at the top of the working chamber 100 , and the coil 310 is also disposed at the top of the working chamber 100 . The air intake mechanism 600 can blow reaction gas toward the coil 310 .

[0032] Furthermore, the multiple magnetic field etching device provided in the present application also includes: a first RF power supply, used to power the coil 310; a second RF power supply, used to power the carrier 200; during the etching process, the coil 310 is energized, capable of ionizing the reaction gas and generating plasma, and the carrier 200 is energized, capable of generating a negative bias potential and attracting positive ions to bombard the wafer.

[0033] In a specific embodiment, the wafer transport mechanism delivers the wafer to be etched into the working chamber 100 through the wafer inlet and outlet. After the carrier 200 receives the wafer, the wafer transport mechanism withdraws and the working chamber 100 is closed. The air intake mechanism 600 supplies the etching reaction gas into the working chamber 100. The coil 310 is energized to generate a glow discharge, which can ionize the etching gas and generate plasma. The carrier 200 is energized, the RF energy induces a bias, and a negative bias potential is generated, which can attract positive ions to accelerate toward the carrier 200, thereby etching the wafer to remove surface materials.

[0034] The present application arranges the coil 310 in the working chamber 100 and is disposed adjacent to the gas inlet mechanism 600, so as to enhance the excitation effect of the magnetic field on the reaction gas and promote the ionization of the reaction gas.

[0035] Furthermore, the multiple magnetic field etching device provided by the present application also includes: a first magnetic group 320, including multiple permanent magnets, which are arranged side by side in a circle around the working chamber 100, and the coil 310 is adjacent to the encirclement of the first magnetic group 320, or at least part of the coil 310 is in the encirclement of the first magnetic group 320; at least two layers of second magnetic groups 330 are arranged below the first magnetic group 320; the second magnetic group 330 includes multiple permanent magnets, which are arranged side by side in a circle around the working chamber 100; at least two layers of second magnetic groups 330 are arranged side by side in the vertical direction.

[0036] Among them, the coil 310 is used as an excitation magnetic field, the first magnetic group 320 is used as a confining magnetic field, and the second magnetic group 330 is used as an enhanced magnetic field; during the etching process, the carrier 200 carries the wafer close to the encirclement of the second magnetic group 330, or at least part of the wafer is in the encirclement of the second magnetic group 330; the excitation magnetic field can ionize the reaction gas and generate plasma; the confining magnetic field can confine electrons near the coil 310, thereby promoting ionization reaction and preventing charged particles from moving toward the cavity wall; the enhanced magnetic field can increase the activity of charged particles, by increasing the movement path of electrons and the number of particle collisions, thereby increasing the plasma concentration in the cavity.

[0037] For details, please refer to Figure 1 In the illustrated embodiment, from top to bottom, three circles of permanent magnets are arranged outside the working chamber 100. The first circle of permanent magnets constitutes the first magnetic group 320; Figure 2 , the lower end of the coil 310 is in the encirclement of the first magnetic group 320. The first and second circles of permanent magnets are arranged at intervals; the second and third circles of permanent magnets are arranged adjacent to each other. The second and third circles of permanent magnets form two layers of the second magnetic group 330; Figure 2 The second magnetic group 330 is close to the carrier 200 . After the carrier 200 receives the wafer, the wafer is close to the second magnetic group 330 .

[0038] It can be supplemented that, if necessary, two or more layers of the first magnetic group 320, or three or more layers of the second magnetic group 330 can be arranged outside the working chamber 100 to meet the need for a greater magnetic field force.

[0039] Continue to refer to Figure 1 , the first magnetic group 320 and the second magnetic group 330 each include a plurality of permanent magnets spaced apart in the circumferential direction. Because the permanent magnets in the same magnetic group are spaced apart at a small distance from each other, their magnetic fields can influence each other, and then radiate into the etching chamber to promote the movement of charged particles. At the same time, since the two layers of the second magnetic group 330 are arranged adjacent to each other, their magnetic fields can also be superimposed and enhanced, and then radiate to the center of the etching chamber. While promoting the movement of charged particles, the two layers of the second magnetic group 330 can also balance the plasma concentration at the center and the edge, and improve the uniformity of wafer etching.

[0040] In a specific embodiment, the coil 310 is energized to generate an excitation magnetic field, which can ionize the reaction gas and produce plasma. The bottom end of the coil 310 is in the encirclement of the first magnetic group 320. The encirclement of the first magnetic group 320 forms a confined space below the coil 310. In the confined space, the confined magnetic field radiates inward, but the magnetic field force is mainly concentrated on the edge of the cavity. When the charged particles approach the edge of the cavity, the electrons in the plasma will be affected by the Lorentz force horizontal to the cavity, making it difficult for the electrons to bombard the inner wall of the cavity and the dielectric window, which is beneficial to stabilize the process results and prolong the service life. The carrier 200 is energized to generate a negative bias potential, and the positively charged gas atoms in the plasma are attracted by the carrier 200, move downward, and bombard the wafer. The wafer is close to the second magnetic group 330, and the two layers of the second magnetic group 330 are equivalent to applying a magnetic field that is approximately perpendicular to the carrier 200 in the etching chamber. The enhanced magnetic field can exert a horizontally deflected Lorentz force on the electrons in the plasma, so that the electrons move in a circular motion around the vertical center axis of the carrier 200. In this way, the movement path of the electrons can be increased, and the number of collisions of the electrons can be increased, thereby improving the plasma activity.

[0041] In summary, the exciting magnetic field promotes plasma generation, and the confining magnetic field confines electrons around the coil, making it easier for electrons to ionize gas atoms and preventing electrons from being led away by the cavity wall. The enhanced magnetic field can increase the activity of plasma near the wafer and accelerate wafer etching. The etching device provided in this application can conveniently and effectively improve the etching efficiency and ensure the etching effect through the coordination of triple magnetic fields.

[0042] In one embodiment, the permanent magnets in the first magnetic group 320 and the second magnetic group 330 are arranged with one pole facing the working chamber 100 and the other pole facing away from the working chamber 100; in the first magnetic group 320, a layer of permanent magnets arranged in a circle is arranged in an alternating magnetic form, and the magnetic poles of any two adjacent permanent magnets are in opposite directions; the multiple layers of permanent magnets in the first magnetic group 320 and the second magnetic group 330 are arranged in rows, and the magnetic poles of any row of permanent magnets have the same direction.

[0043] For details, please refer to Figure 1 and Figure 8 In the illustrated embodiment, of any two adjacent permanent magnets in the first magnetic group 320, one has its N pole exposed to the outside and its S pole facing the etching chamber, and the other has its S pole exposed to the outside and its N pole facing the etching chamber.

[0044] Continue to refer to Figure 1 and Figure 8 In the illustrated embodiment, any two adjacent permanent magnets in each layer of the second magnetic group 330 are also configured such that one of them has its N pole exposed to the outside and its S pole facing the etching chamber, and the other has its S pole exposed to the outside and its N pole facing the etching chamber.

[0045] Continue to refer to Figure 1 and Figure 8 The three layers of permanent magnet arrays in the first magnetic group 320 and the second magnetic group 330 are arranged in one-to-one correspondence, and each column has three permanent magnets along the vertical direction. The three permanent magnets in the same column have the same magnetic direction.

[0046] The magnetic directions of two circumferentially adjacent permanent magnets are opposite. When their magnetic forces interact with each other and the generated constant magnetic field is radiated into the working cavity 100, the vector field can both make the cavity wall repel charged particles and provide kinetic energy for the charged particles.

[0047] For details, please refer to Fig. 9 and Fig.10 , showing a confining magnetic field. Since the confining magnetic field is composed of only one circle of permanent magnets, its magnetic induction intensity is small and the radiation range is mainly aimed at the wall of the working chamber 100. When the plasma generated by the excitation magnetic field moves toward the wall of the chamber, it will be blocked and retracted by the confining magnetic field, so that the plasma is concentrated near the coil 310 and moves better under the action of the excitation magnetic field.

[0048] Refer to Fig.11 and Fig.12 , which shows an enhanced magnetic field. Since the enhanced magnetic field is composed of two circles of permanent magnets, and since the two circles of permanent magnets are adjacent to each other, their magnetic fields can be superimposed on each other, so that the magnetic induction intensity of the enhanced magnetic field is large and the radiation range is wide.

[0049] In the actual etching process, the density of the plasma in the etching chamber is often uneven. Depending on the strength of the electric field, the plasma often forms a classic, donut-shaped distribution pattern - from the perspective of the horizontal plane of the cavity, the plasma in the center is thin, while the plasma at the edge is dense. This will cause differences in the etching rate on the wafer surface, thereby affecting the uniformity of wafer etching. Since the magnetic induction intensity of the enhanced magnetic field is large and the superimposed magnetic field can radiate to the center of the cavity, at this time, the enhanced magnetic field gradually weakens from the center to the edge, and so does the Lorentz force it exerts on electrons; therefore, the enhanced magnetic field can effectively enhance the plasma activity in the central area, thereby optimizing the uniformity of plasma distribution and optimizing the etching uniformity of the wafer.

[0050] Simply put, the enhanced magnetic field formed by the second magnetic group 330 can not only increase the movement path of electrons and reduce the mean free path, but also enhance the plasma activity in the central area; therefore, on the premise of being able to increase the etching rate of the entire piece, the enhanced magnetic field can also specifically increase the etching rate of the central area, making the etching uniformity better.

[0051] In summary, the magnetic field can limit the movement area of ​​electrons in the plasma and make them move on a longer path; by limiting the movement of electrons, the magnetic field helps to reduce instabilities in the plasma, such as electron density fluctuations, thereby improving the uniformity and repeatability of the etching process; by extending the movement path of electrons, the number of collisions between electrons and gas molecules can be increased, thereby maintaining a stable plasma state. In addition, the magnetic field is perpendicular to the direction of the coil 310, and the magnetic field helps to expand the plasma from the coil 310 area to the entire reaction chamber, thereby achieving uniform distribution of plasma in a larger area.

[0052] Optionally, the multiple magnetic field etching device provided in the present application further includes a rotation drive mechanism 500 , which is used to drive the first magnetic group 320 and the second magnetic group 330 to rotate around the longitudinal center axis of the working chamber 100 .

[0053] Since multiple permanent magnets in the same magnetic group are arranged at intervals, the magnetic force in the magnetic field generated by their mutual attraction is uneven, which may affect the uniformity of plasma distribution in the etching chamber.

[0054] By using the rotating drive mechanism 500 to drive the first magnetic group 320 and the second magnetic group 330 to rotate, the uniformity of the magnetic field can be effectively improved, so that the magnitude and direction of the magnetic force at each point on the same circle in the magnetic field are nearly consistent. By rotating the stable magnetic field, the energy distribution of the plasma can also be optimized, thereby affecting the chemical reaction during the etching process and improving the selectivity for specific materials; in the high-density plasma (HDP) etching process, a stable magnetic field is essential for maintaining a plasma state with high electron density and low electron temperature.

[0055] In one embodiment, the rotary drive mechanism 500 includes two sets of drive structures (such as a rotary motor, a cylinder, etc.); the first magnetic group 320 is disposed on an annular mounting bar, which is disposed around the outside of the working chamber 100, and one set of drive structures is used to drive the annular mounting bar and the first magnetic group 320 thereon to rotate around the working chamber 100; the second magnetic group 330 is disposed on another annular mounting bar, which is also disposed around the outside of the working chamber 100, and the other set of drive structures is used to drive the annular mounting bar and the second magnetic group 330 thereon to rotate around the working chamber 100.

[0056] In this embodiment, the first magnetic group 320 and the second magnetic group 330 can independently rotate under the trend of the corresponding driving structure. In actual use, the first magnetic group 320 and the second magnetic group 330 can rotate in different directions and / or at different speeds according to the needs of the magnetic field reaction, thereby meeting more diverse etching needs.

[0057] In another embodiment, the multiple magnetic field etching device provided by itself further includes a mounting cover 410, which is sleeved outside the working chamber 100 and is used to mount the first magnetic group 320 and the second magnetic group 330; the mounting cover 410 is made of non-magnetic material.

[0058] For details, please refer to Figure 1 and Figure 2 In the illustrated embodiment, the working chamber 100 includes: a base 110, a carrier 200 is arranged in the base 110, and a wafer inlet and outlet are arranged on one side of the base 110; a connecting tube 120 is sealed and connected to the base 110, and a coil 310 is suspended in the connecting tube 120; an etching chamber is formed between the base 110 and the connecting tube 120.

[0059] Continue to refer to Figure 1 and Figure 2 The mounting cover 410 is cylindrical and sleeved outside the connecting tube 120 , and the first magnetic group 320 and the second magnetic group 330 are fixedly disposed on the outer wall of the mounting cover 410 .

[0060] The mounting cover 410 is made of non-magnetic material, which can prevent the permanent magnet from affecting the magnetic force after adsorbing the mounting cover 410. For example, the mounting cover 410 can be made of aluminum alloy; aluminum alloy is not affected by magnetic materials and will not interfere with the magnetic field.

[0061] Similarly, the connecting tube 120 can also be made of non-magnetic materials to facilitate the confinement of the magnetic field and the enhancement of the magnetic field radiation into the cavity. For example, the connecting tube 120 can be made of ceramic or quartz; ceramic is not affected by the magnetic field, and the cavity body is not easily etched and damaged.

[0062] Optionally, the rotation driving mechanism 500 is directly connected to the mounting cover 410 , and drives the mounting cover 410 to rotate, so that the first magnetic group 320 and the second magnetic group 330 rotate synchronously.

[0063] Optionally, the rotation drive mechanism 500 includes: a rack 510 that is arranged in a circle along the outer wall of the mounting cover 410; a gear 520 that is meshed with the rack 510; and a rotation drive member 530 that is used to drive the gear 520 to rotate.

[0064] For details, please refer to Figure 1 In the illustrated embodiment, a circle of racks 510 is provided on the upper outer wall of the mounting cover 410 away from the base 110. The rotary drive member 530 can rotate any driving structure such as a motor and a cylinder that can drive the gear 520 to rotate. The rotary drive member 530 is provided on one side of the working chamber 100, and the gear 520 is provided at the movable end of the rotary drive member 530 and meshes with the rack 510. During the etching process, the rotary drive member 530 drives the gear 520 to rotate, and the gear 520 can drive the rack 510 and the mounting cover 410 to rotate.

[0065] The present application does not limit the specific configuration of the rotation drive mechanism 500 .

[0066] In one embodiment, the working chamber 100 includes: a base 110, a carrier 200 is disposed in the base 110, and a wafer inlet and outlet are disposed on one side of the base 110; a connecting tube 120, the lower end of the connecting tube 120 is sealed and connected to the base 110; an upper cover 130, the upper end of the connecting tube 120 is sealed and connected to the upper cover 130; an etching chamber is formed between the base 110, the connecting tube 120 and the upper cover 130; the coil 310 is suspended in the connecting tube 120, and the mounting cover 410 is sleeved on the outside of the connecting tube 120.

[0067] For details, please refer to Figure 2 In the illustrated embodiment, a circular hole is provided on the top of the base 110; the connecting tube 120 is provided in a cylindrical shape with open upper and lower ends, the lower end of the connecting tube 120 is connected to the top surface of the base 110, and the connecting tube 120 is connected to the base 110 through the circular hole; the main body of the upper cover 130 is provided in a circular plate shape, and a circle of plug blocks 133 is provided on the bottom surface of the upper cover 130. The diameter of the circle formed by the plug blocks 133 is smaller than the inner diameter of the connecting tube 120. When the upper cover 130 covers the top end of the connecting tube 120, the plug blocks 133 are inserted into the connecting tube 120; the plug blocks 133 can fit tightly with the connecting tube 120, thereby enhancing the sealing of the etching chamber; the diameter of the circle formed by the main body of the upper cover 130 is larger than the outer diameter of the connecting tube 120. When the upper cover 130 covers the top end of the connecting tube 120, a circle of skirt protrudes from the edge of the upper cover 130.

[0068] Optionally, a circle of sealing strip is provided between the base 110 and the connecting tube 120; when the base 110 and the connecting tube 120 are connected, the sealing strip is compressed between the two.

[0069] Optionally, a circle of sealing strip is provided between the upper cover 130 and the connecting tube 120. When the upper cover 130 is connected to the connecting tube 120, the sealing strip is compressed between the two.

[0070] The sealing strip is made of elastic materials such as rubber and plastic, and has the characteristics of elastic deformation. When under pressure, the sealing strip can compensate for the gap by deformation, thereby ensuring sealing.

[0071] The working chamber 100 is assembled from a base 110, a connecting tube 120 and an upper cover 130. On the one hand, it is convenient for early preparation, transportation and assembly, as well as later inspection, maintenance and replacement. On the other hand, when the etching device needs to be shut down to clean the chamber and internal parts, the upper cover 130 can be removed for related processing.

[0072] Optionally, the multiple magnetic field etching device provided in the present application also includes a lifting drive mechanism, which is used to drive the carrier 200 to move in the vertical direction; when the carrier 200 is at a first height position, the wafer inlet and outlet are opposite to the carrier 200; after the carrier 200 is driven to rise to a second height position by the lifting drive mechanism, the carrier 200 carries the wafer close to the encirclement of the second magnetic group 330, or at least part of the wafer is in the encirclement of the second magnetic group 330.

[0073] The lifting drive mechanism can adopt any linear drive structure such as a cylinder or an electric cylinder. The fixed end of the lifting drive mechanism is arranged outside the working chamber 100, and the movable end is extended into the working chamber 100 and connected to the carrier 200, so as to facilitate the installation and maintenance of the lifting drive mechanism; at the same time, a bellows is arranged between the carrier 200 and the inner bottom wall of the working chamber 100, which can prevent air leakage and ensure the air pressure in the chamber, and can also use the structural characteristics of the bellows to adapt to the lifting movement of the carrier 200.

[0074] By setting a lifting drive mechanism, the carrier 200 can load and unload wafers at a low position and can also receive the effect of the enhanced magnetic field at a high position. By changing the output stroke of the lifting drive mechanism, the second height position, the relative position of the carrier 200 and the second magnetic group 330, and the relative position of the wafer and the enhanced magnetic field can be adjusted to determine the optimal action position of the enhanced magnetic field.

[0075] When the etching device uses a mounting cover 410 to fix the first magnetic group 320 and the second magnetic group 330, optionally, two rows of mounting grooves 401 are provided on the mounting cover 410, and the two rows of mounting grooves 401 are spaced apart in the vertical direction. The upper row of mounting grooves 401 is used to install the first magnetic group 320, and the lower row of mounting grooves 401 is used to install at least two layers of the second magnetic group 330; one row includes a plurality of mounting grooves 401 spaced apart in the circumferential direction, and any mounting groove 401 can accommodate a permanent magnet.

[0076] For details, please refer to Figure 1 , Figure 4 and Figure 8 In the illustrated embodiment, two rows of mounting grooves 401a and 401b are provided on the mounting cover 410, and the two rows of mounting grooves 401a and 401b are arranged in an array and correspond to each other. The length of the first row of mounting grooves 401a arranged on the top is shorter than the length of the second row of mounting grooves 401b arranged on the bottom in the vertical direction; the first row of mounting grooves 401a can accommodate one permanent magnet, and the second row of mounting grooves 401b can accommodate two vertically arranged permanent magnets.

[0077] By installing the embedding groove 401 to accommodate the permanent magnet, the installation position of the permanent magnet can be limited to facilitate the assembly of the first magnetic group 320 and the second magnetic group 330, and the permanent magnet can be well fixed to avoid displacement or movement of the permanent magnet when the rotary drive mechanism 500 is used to drive the first magnetic group 320 and the second magnetic group 330 to rotate.

[0078] In one embodiment, the permanent magnet is inserted into the mounting groove 401 and is tightly fitted into the mounting groove 401. The permanent magnet is fastened by size and internal stress of the material.

[0079] In another embodiment, an elastic member 402 is disposed in the mounting groove 401 . After the permanent magnet is placed in the mounting groove 401 , it can press against the elastic member 402 , causing the elastic member 402 to deform. The elastic member 402 can press against the permanent magnet in reverse.

[0080] The elastic member 402 may be made of elastic materials such as rubber and plastic, or may be made of elastic structures such as springs and spring sheets.

[0081] For details, please refer to Figure 5 In the illustrated embodiment, elastic members 402 are provided on the upper slot wall and the right slot wall of the mounting slot 401; after the permanent magnet is placed in the mounting slot 401, the elastic member 402 on the upper slot wall is deformed by force and can press the permanent magnet against the lower slot wall, and the elastic member 402 on the right slot wall is deformed by force and can press the permanent magnet against the left slot wall. The two groups of elastic members 402 cooperate to stabilize the permanent magnet in the mounting slot 401. At the same time, since the positioning reference surfaces of the permanent magnet are both the lower slot wall and the left slot wall, the relative position of the permanent magnet can be well controlled to ensure the balanced distribution of the magnetic field force between the permanent magnets.

[0082] In another embodiment, a card slot 403 is provided on the outer wall surface of the mounting cover 410, and the card slot 403 is connected to the mounting groove 401; the multiple magnetic field etching device also includes a card strip 420, which is made of non-magnetic material, can be inserted into the card slot 403, and fix the permanent magnet.

[0083] For example, a first magnetic group 320 and two second magnetic groups 330 are provided on the mounting cover 410. At this time, two rows of mounting grooves 401a and 401b and three circles of clamping grooves 403 are provided on the outer wall of the mounting cover 410, one circle of clamping grooves 403 is connected to the first row of mounting grooves 401a, and the other two circles of clamping grooves 403 are connected to the second row of mounting grooves 401b. After the magnetic group is placed in place, one circle of clamping grooves 403 can just surround a circle of permanent magnets; insert the clamping strip 420 into the clamping slot 403, and the clamping strip 420 can be used to press the permanent magnet into the mounting groove 401, thereby preventing the permanent magnet from escaping from the mounting groove 401.

[0084] In order to reinforce the clamping strip 420, optionally, a screw hole is provided in the clamping slot 403, and a countersunk hole is provided on the clamping strip 420; the clamping strip 420 is inserted into the clamping slot 403, and the countersunk hole is aligned with the screw hole, and the screw is screwed in to fasten the clamping strip 420 to the mounting cover 410.

[0085] To facilitate the assembly of the permanent magnet and the mounting cover 410, in a specific embodiment, at least two mounting grooves 401 in the same row are regarded as a group, and at least two mounting grooves 401 in any group are connected by a clamping groove 403; after the permanent magnet is installed in place, a clamping strip 420 is inserted into the clamping groove 403, and the permanent magnet can be fixed in groups by multiple clamping strips 420.

[0086] For details, please refer to Figure 1 and Figure 8 In the illustrated embodiment, five adjacent permanent magnets in the same circle are arranged as a group and fastened by a clamping strip 420 .

[0087] The permanent magnets are fixed in groups, which makes it easier to install in the early stage and replace in the later stage.

[0088] When the multiple magnetic field etching device provided in the present application drives the mounting cover 410 and drives the first magnetic group 320 and the second magnetic group 330 to rotate through the rotating drive mechanism 500, in order to improve the stability of the rotation, optionally, the working chamber 100 includes a base 110, a connecting tube 120 and an upper cover 130, and the mounting cover 410 is restricted between the base 110 and the upper cover 130; a circle of first guide blocks 111 is provided on one of the top surface of the base 110 and the bottom surface of the mounting cover 410, and a circle of first slide grooves 411 is provided on the other, and the first guide block 111 is inserted in the first slide groove 411. When the mounting cover 410 rotates, the first guide block 111 and the first slide groove 411 restrict each other.

[0089] For details, please refer to Figure 2 In the illustrated embodiment, the mounting cover 410 is sleeved outside the connecting tube 120 , and the bottom surface of the mounting cover 410 contacts the base 110 , and the top surface contacts the upper cover 130 .

[0090] Continue to take photos Figure 2A circular hole is provided at the center of the top surface of the base 110, and the connecting tube 120 is connected to the base 110 through the circular hole. A circle of first guide blocks 111 are also provided on the top surface of the base 110. The first guide blocks 111 are generally annular and surround the circular hole and the connecting tube 120.

[0091] Continue to take photos Figure 2 The mounting cover 410 is in the shape of a cylinder with open upper and lower ends. A circle of first slide grooves 411 is provided on the bottom surface of the mounting cover 410, and the first slide grooves 411 are in the shape of a circular ring. When the mounting cover 410 is installed in place, the first guide block 111 is inserted into the first slide groove 411. The guide block and the slide groove can not only position each other to facilitate the assembly of the mounting cover 410 and prevent the relative displacement of the mounting cover 410 and the base 110, but also play a role in motion guidance; when the rotary drive mechanism 500 drives the mounting cover 410 to rotate, the guide block is always in the slide groove and performs positioning rotation along the slide groove.

[0092] Optionally, the working chamber 100 includes a base 110, a connecting tube 120 and an upper cover 130, and the mounting cover 410 is confined between the base 110 and the upper cover 130; a circle of second guide blocks 112 is provided on one of the bottom surface of the upper cover 130 and the top surface of the mounting cover 410, and a circle of second slide grooves 412 is provided on the other, and the second guide blocks 112 are inserted in the second slide grooves 412. When the mounting cover 410 rotates, the second guide blocks 112 and the second slide grooves 412 restrict each other.

[0093] For details, please refer to Figure 2 In the illustrated embodiment, the main body of the upper cover 130 is set in a circular plate shape, and the diameter of the circle formed by the main body of the upper cover 130 is larger than the outer diameter of the connecting tube 120. When the upper cover 130 covers the top of the connecting tube 120, a circle of skirt protrudes outward from the edge of the upper cover 130. A circle of second slide grooves 412 are provided on the lower surface of the skirt. The second slide grooves 412 are generally annular and surround the outside of the connecting tube 120.

[0094] Continue to take photos Figure 2 The top surface of the mounting cover 410 is provided with a circle of second guide blocks 112, which are in an annular shape as a whole. When the mounting cover 410 is installed in place, the second guide blocks 112 are inserted into the second slide groove 412. The guide blocks and the slide groove can not only position each other to facilitate the assembly of the mounting cover 410 and prevent the relative displacement of the mounting cover 410 and the upper cover 130, but also play a role in motion guidance; when the rotary drive mechanism 500 drives the mounting cover 410 to rotate, the guide blocks are always in the slide groove and rotate along the slide groove for positioning.

[0095] Figure 2In the embodiment shown, the upper end of the mounting cover 410 is restrained by the second guide block 112 and the second slide groove 412, and the lower end is restrained by the first guide block 111 and the first slide groove 411. This arrangement is helpful for confirming the installation position and installation direction of the mounting cover 410 during assembly, and can fix the rotation position of the mounting cover 410 during rotation, thereby ensuring the stability of the overall structure.

[0096] Optionally, the multiple magnetic field etching device provided in the present application also includes an air intake mechanism 600, which is used to blow reaction gas into the working chamber 100; the air intake mechanism 600 includes an air intake module 610, which is arranged at the top of the working chamber 100 and can directly blow air to the coil 310.

[0097] Specifically, the air inlet module 610 is provided with an air inlet and an air outlet, the air inlet is connected to the air supply device and the air outlet, and the air outlet is directly opposite to the coil 310. During the etching process, the reaction gas delivered by the air supply device is blown toward the coil 310 through the air inlet module 610, and the exciting magnetic field can directly, quickly and comprehensively act on the reaction gas to promote the ionization of the reaction gas.

[0098] Optionally, the air inlet module 610 is provided with a plurality of air outlets, and the plurality of air outlets are distributed in the etching chamber. Improving the extensiveness and comprehensiveness of the distribution of the air outlets in the chamber is beneficial to the uniformity of the distribution of the reaction gas in the chamber; when the magnetic field is excited, the density distribution of the plasma in the chamber is more balanced.

[0099] In one embodiment, the air intake module 610 includes: a central communication portion 611, an air inlet is provided on the central communication portion 611, and the air inlet is connected to the air supply device; a first circulation portion 612, a second circulation portion 613 and a third circulation portion 614, and the first circulation portion 612, the second circulation portion 613 and the third circulation portion 614 are arranged on the central communication portion 611 at equal intervals along the circumferential direction; wherein a confluence channel 611a is provided in the central communication portion 611, and the air inlet is connected to the confluence channel 611a; the first circulation portion 612, the second circulation portion 613 and the third circulation portion 614 are arranged on the central communication portion 611 at equal intervals along the circumferential direction; The second circulation part 613 and the third circulation part 614 are each provided with a diversion channel 611b, and the three groups of diversion channels 611b are respectively connected to the converging channel 611a; the first circulation part 612, the second circulation part 613 and the third circulation part 614 are each provided with a plurality of gas outlets, and the plurality of gas outlets are radially spaced apart, and the gas outlets are connected to the diversion channel 611b; during the etching process, the reaction gas output by the gas supply equipment can enter the converging channel 611a and the diversion channel 611b through the gas inlet, and then be blown toward the coil 310 through the gas outlet.

[0100] For details, please refer to Figure 3 , Figure 6 and Figure 7In the illustrated embodiment, the air intake module 610 is similar to a three-blade fan as a whole; the central connecting portion 611 constitutes the center of the three-blade fan, and three groups of circulation portions 612, 613 and 614 are distributed in a circular array with equal intervals around the central connecting portion 611.

[0101] Combined with reference Figure 2 The working chamber 100 includes a base 110, a connecting tube 120 and an upper cover 130, and an air intake module 610 is disposed on the bottom surface of the upper cover 130 facing the connecting tube 120 and the base 110. The coil 310 is suspended on the bottom surface of the air intake module 610 through a bracket, and the air intake module 610 is suspended directly above the coil 310. The central communication portion 611 is located on the longitudinal central axis of the coil 310, and three groups of flow portions 612, 613 and 614 extend axially toward the chamber wall.

[0102] Combined with reference Figure 6 At least one exhaust port is provided on the bottom surface of the three groups of flow portions 612, 613 and 614 facing the coil 310, and the multiple exhaust ports in one row are evenly spaced along the radial direction.

[0103] Combined with reference Figure 7 , a confluence channel 611a and three groups of diversion channels 611b are provided inside the air intake module 610. The confluence channel 611a is provided at the center of the air intake module 610; the three groups of diversion channels 611b are arranged in an equally spaced circular array around the confluence channel 611a, and the three groups of diversion channels 611b are respectively connected to the confluence channel 611a. At least one exhaust port is provided at any group of diversion channels 611b, and the exhaust ports are arranged at equal intervals along the extension direction of the diversion channel 611b.

[0104] During the etching process, the reaction gas output by the gas supply equipment can enter the confluence channel 611a through the air inlet. After filling the reflux channel, the reaction gas can flow evenly to each branch channel 611b and then be discharged through multiple outlets in the branch channel 611b. The reaction gas blown out through the air inlet module 610 can be blown into the excitation magnetic field from multiple positions.

[0105] Optionally, the air intake module 610 includes a bottom shell and a cover plate, the top of the bottom shell is provided with a groove, the cover plate can be inserted into the groove and seal the bottom shell; a confluence channel 611a is provided at the center of the bottom of the groove, and a diversion channel 611b is provided from the center to each flow portion and the bottom of the groove, one end of any diversion channel 611b is connected to the confluence channel 611a, and the other end extends toward the end of the corresponding flow portion. An air outlet is provided at the bottom of the bottom shell, and the air outlet is connected to the diversion channel 611b.

[0106] Furthermore, there is a mounting tube 615 on the cover plate, and the mounting tube 615 is arranged in a circular tube shape. A circle of air inlets is arranged on the tube wall of the mounting tube 615, and multiple air inlets in the circle are evenly spaced around the mounting tube 615; the air inlet radially penetrates the tube wall of the mounting tube 615 and is connected to the pipeline of the mounting tube 615; a connecting hole is opened on the cover plate, and the mounting tube 615 is connected to the confluence channel 611a through the connecting hole.

[0107] Furthermore, the working chamber 100 includes a base 110, a connecting tube 120 and an upper cover 130. A longitudinally extending installation channel 131 is provided at the center of the upper cover 130. An air inlet 132 is provided on one side of the installation channel 131. The air inlet 132 is connected to the air supply device.

[0108] For details, please refer to Figure 2 and Figure 3 In the illustrated embodiment, the mounting pipe 615 is inserted into the mounting channel 131, and the air intake module 610 is suspended on the bottom surface of the upper cover 130. There is a gap between the mounting pipe 615 and the mounting channel 131. After the reaction gas outputted from the gas supply device passes through the air intake hole 132 and enters the mounting channel 131, it can pass through the gap and enter the mounting pipe 615 through the air intake port, and then enter the converging channel 611a and the diverting channel 611b along the mounting pipe 615 and the connecting hole.

[0109] Optionally, the air intake mechanism 600 further includes a lifting module 620 , and the lifting module 620 is used to drive the air intake module 610 to move in a vertical direction, thereby changing the relative position of the air intake module 610 and the coil 310 .

[0110] It is easy to understand that the present application arranges the air intake mechanism 600 and the coil 310 nearby so that the reaction gas can be blown directly to the coil 310, thereby ensuring that the excitation magnetic field is radiated to the newly introduced reaction gas to the greatest extent, thereby ensuring the continuous generation of plasma. However, in actual work, the intensity distribution and potential trend of the excitation magnetic field will affect its own radiation range and ionization ability due to factors such as the number of turns and diameter of the coil 310.

[0111] By setting the lifting module 620, the air intake module 610 is driven to move up and down in the vertical direction, so that the air intake module 610 is close to or away from the coil 310, so as to determine the optimal position of the air supply of the air intake module 610. In addition, for different processes, different heights of plasma are required, so that the air intake module 610 can be raised and lowered, and the height of plasma generation can be changed to meet more diverse etching needs.

[0112] The lifting module 620 may adopt any driving structure such as a cylinder, an electric cylinder, etc. that can drive the air intake module 610 to perform lifting motion in the vertical direction.

[0113] In a specific embodiment, the working chamber 100 includes an upper cover 130, a longitudinally extending mounting channel 131 is provided at the center of the upper cover 130, and an air inlet hole 132 is provided on one side of the mounting channel 131; the lifting module 620 includes: a lifting drive member 621, which is provided outside the working chamber 100, and the movable end of the lifting drive member 621 passes through the mounting channel 131 and is connected to the air inlet module 610; a bellows 622, which is provided in the working chamber 100, one end of the bellows 622 is sealedly connected to the top wall of the working chamber 100, and the other end is sealedly connected to the air inlet module 610; wherein, an air inlet is provided on the top of the air inlet module 610, and the reaction gas can enter the air inlet through the air inlet hole 132 and along the mounting channel 131.

[0114] For details, please refer to Figure 2 and Figure 3 In the illustrated embodiment, the working chamber 100 includes a base 110, a connecting tube 120 and an upper cover 130. The center of the upper cover 130 is provided with an upwardly protruding mounting support. A mounting channel 131 is formed in the mounting support and passes through the upper cover 130 in a vertical direction. The mounting channel 131 is connected to the etching chamber. The fixed end of the lifting drive member 621 is arranged on the top of the mounting support and is sealed and connected to the mounting support. The movable end of the lifting drive member 621 extends into the mounting channel 131 and is connected to the air intake module 610.

[0115] Continue to refer to Figure 2 and Figure 3 A mounting tube 615 is disposed on the top surface of the air intake module 610 , and the outer diameter of the mounting tube 615 is smaller than the inner diameter of the mounting channel 131 ; the mounting tube 615 is connected to the movable end of the lifting drive member 621 through the mounting channel 131 .

[0116] Continue to refer to Figure 2 and Figure 3 An air inlet 132 is provided on the right side of the installation channel 131, and the air inlet 132 connects the air supply device and the installation channel 131. A circle of air inlets is provided on the wall of the installation tube 615, and the air inlets connect the installation channel 131 and the air outlet of the air inlet module 610.

[0117] Continue to refer to Figure 2 and Figure 3 A bellows 622 is provided between the bottom surface of the upper cover 130 and the top surface of the air intake module 610 . The bellows 622 can both seal the installation channel 131 and adapt to the lifting movement of the air intake module 610 .

[0118] During the etching process, the reaction gas delivered by the gas supply equipment is blown into the installation channel 131 through the air inlet 132, and then blown into the air inlet through the installation channel 131; since a circle of air inlets is provided on the tube wall of the installation tube 615, after the reaction gas fills the installation channel 131, it can be blown into the installation tube 615 from all directions through these air inlets, thereby ensuring the gas flow and gas filling in the installation tube 615, and further ensuring the gas flow of the reaction gas flowing to each branch channel 611b and the comprehensiveness, uniformity and effective gas pressure of the gas output from the final outlet.

[0119] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A multiple magnetic field etching device, characterized in that: include: A working chamber (100), used to provide space for wafer etching; A carrier (200) is disposed in the working chamber (100) and is used to receive a wafer; A coil (310) is disposed in the working chamber (100) and suspended above the carrier (200); A first magnetic group (320) comprises a plurality of permanent magnets, wherein the plurality of permanent magnets are arranged side by side in a circle around the working chamber (100), and the coil (310) is adjacent to the circle surrounding the first magnetic group (320), or at least part of the coil (310) is within the circle surrounding the first magnetic group (320); At least two layers of second magnetic groups (330), arranged below the first magnetic group (320); The second magnetic group (330) comprises a plurality of permanent magnets, and the plurality of permanent magnets are arranged side by side in a circle around the working chamber (100); At least two layers of the second magnetic groups (330) are arranged in parallel along the vertical direction; The coil (310) is used as an excitation magnetic field, the first magnetic group (320) is used as a confining magnetic field, and the second magnetic group (330) is used as an enhanced magnetic field; During the etching process, the carrier (200) carries the wafer close to the encirclement of the second magnetic group (330), or at least part of the wafer is within the encirclement of the second magnetic group (330); The excitation magnetic field can ionize the reaction gas and generate plasma; The confining magnetic field can confine electrons near the coil (310), thereby promoting ionization reactions and preventing charged particles from moving toward the cavity wall; The enhanced magnetic field can increase the activity of charged particles, increase the movement path of electrons and the number of particle collisions, thereby increasing the plasma concentration in the cavity.

2. The multi-magnetic field etching device according to claim 1, characterized in that: The permanent magnets in the first magnetic group (320) and the second magnetic group (330) are both arranged such that one magnetic pole faces the working cavity (100) and the other magnetic pole faces away from the working cavity (100); In the first magnetic group (320), a layer of permanent magnets arranged in a circle is arranged in an alternating magnetic form, and the magnetic poles of any two adjacent permanent magnets are in opposite directions; The multiple layers of permanent magnets in the first magnetic group (320) and the second magnetic group (330) are arranged in rows, and the magnetic poles of the permanent magnets in any row are in the same direction.

3. The multi-magnetic field etching device according to claim 1, characterized in that: It also includes a rotation drive mechanism (500), wherein the rotation drive mechanism (500) is used to drive the first magnetic group (320) and the second magnetic group (330) to rotate around the longitudinal center axis of the working chamber (100).

4. The multi-magnetic field etching device according to claim 3, characterized in that: It also includes a mounting cover (410), the mounting cover (410) being sleeved outside the working chamber (100) and used for mounting the first magnetic group (320) and the second magnetic group (330); The mounting cover (410) is made of non-magnetic material; The rotary drive mechanism (500) comprises: A rack (510) wound around the outer wall of the mounting cover (410); A gear (520) meshing with the rack (510); The rotation driving member (530) is used to drive the gear (520) to rotate.

5. The multi-magnetic field etching device according to claim 4, characterized in that: The working chamber (100) comprises: A base (110), the carrier (200) being arranged in the base (110), and a wafer inlet and outlet being arranged on one side of the base (110); A connecting tube (120), the lower end of the connecting tube (120) being sealingly connected to the base (110); An upper cover (130), the upper end of the connecting tube (120) being sealingly connected to the upper cover (130); An etching chamber is formed between the base (110), the connecting tube (120) and the upper cover (130); The coil (310) is suspended in the connecting tube (120), and the mounting cover (410) is sleeved outside the connecting tube (120).

6. The multi-magnetic field etching device according to claim 5, characterized in that: The mounting cover (410) is restricted between the base (110) and the upper cover (130); a circle of first guide blocks (111) is provided on one of the top surface of the base (110) and the bottom surface of the mounting cover (410), and a circle of first slide grooves (411) is provided on the other, the first guide blocks (111) are inserted into the first slide grooves (411), and when the mounting cover (410) rotates, the first guide blocks (111) and the first slide grooves (411) restrict each other; And / or, a circle of second guide blocks (112) is provided on one of the bottom surface of the upper cover (130) and the top surface of the mounting cover (410), and a circle of second slide grooves (412) is provided on the other, the second guide blocks (112) are inserted into the second slide grooves (412), and when the mounting cover (410) rotates, the second guide blocks (112) and the second slide grooves (412) restrict each other; And / or, the multiple magnetic field etching device further comprises a lifting drive mechanism, the lifting drive mechanism being used to drive the carrier (200) to move in a vertical direction; when the carrier (200) is at a first height position, the wafer inlet and outlet are directly opposite to the carrier (200); after the carrier (200) is driven to rise to a second height position by the lifting drive mechanism, the carrier (200) carries the wafer close to the encirclement of the second magnetic group (330), or at least part of the wafer is within the encirclement of the second magnetic group (330); And / or, the mounting cover (410) is provided with two rows of mounting grooves (401), the two rows of mounting grooves (401) are arranged at intervals in the vertical direction, the upper row of mounting grooves (401) are used to mount the first magnetic group (320), and the lower row of mounting grooves (401) are used to mount at least two layers of the second magnetic group (330); one row includes a plurality of mounting grooves (401) arranged at intervals in the circumferential direction, and any one of the mounting grooves (401) can accommodate a permanent magnet.

7. The multi-magnetic field etching device according to any one of claims 1 to 6, characterized in that: It also includes an air intake mechanism (600), the air intake mechanism (600) being used to blow reaction gas into the working chamber (100); The air intake mechanism (600) comprises an air intake module (610), wherein the air intake module (610) is arranged at the top of the working chamber (100) and is capable of directly blowing air to the coil (310).

8. The multi-magnetic field etching device according to claim 7, characterized in that: The air intake module (610) comprises: A central connecting portion (611), wherein the central connecting portion (611) is provided with an air inlet, and the air inlet is connected to an air supply device; a first circulation portion (612), a second circulation portion (613) and a third circulation portion (614), wherein the first circulation portion (612), the second circulation portion (613) and the third circulation portion (614) are arranged on the central communication portion (611) at equal intervals along a circumferential direction; Wherein, a converging channel (611a) is provided in the central connecting portion (611), and the air inlet is connected to the converging channel (611a); The first circulation portion (612), the second circulation portion (613) and the third circulation portion (614) are each provided with a flow diversion channel (611b), and the three groups of flow diversion channels (611b) are respectively connected to the converging channel (611a); The first circulation portion (612), the second circulation portion (613) and the third circulation portion (614) are each provided with a plurality of air outlets, the plurality of air outlets being arranged at intervals along the radial direction, and the air outlets being connected to the diversion channel (611b); During the etching process, the reaction gas output by the gas supply device can enter the converging channel (611a) and the branching channel (611b) through the gas inlet, and then be blown toward the coil (310) through the gas outlet.

9. The multi-magnetic field etching device according to claim 7, characterized in that: The air intake mechanism (600) further comprises a lifting module (620), wherein the lifting module (620) is used to drive the air intake module (610) to move in a vertical direction, thereby changing the relative position of the air intake module (610) and the coil (310).

10. The multi-magnetic field etching device according to claim 9, characterized in that: The working chamber (100) comprises an upper cover (130), a longitudinally extending installation channel (131) is provided at the center of the upper cover (130), and an air inlet hole (132) is provided at one side of the installation channel (131); The lifting module (620) comprises: A lifting drive member (621) is arranged outside the working chamber (100), and a movable end of the lifting drive member (621) passes through the installation channel (131) and is connected to the air intake module (610); a bellows (622) disposed in the working chamber (100), one end of the bellows (622) being sealedly connected to the top wall of the working chamber (100), and the other end of the bellows (622) being sealedly connected to the air intake module (610); Wherein, an air inlet is provided at the top of the air inlet module (610), and the reaction gas can enter the air inlet through the air inlet hole (132) and along the installation channel (131).

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