A wet oxidation aperture control method for VCSEL chip manufacturing

Abstract

The present application provides a wet oxidation aperture control method for VCSEL chip manufacturing, which relates to the field of aperture control technology, including: connecting wet oxidation process equipment, connecting to a gas filter, filtering the gas medium; obtaining a preset reaction area of ​​the chip, and determining a preset aperture parameter; delivering the filtered gas medium to an oxidation reaction chamber, and determining process control parameters; adjusting the process control parameters according to a pollutant monitoring feedback unit, and obtaining optimized process control parameters; the oxidation reaction chamber wet-oxidizes the VCSEL chip according to the optimized process control parameters. The present application can solve the technical problem in the prior art that the aperture control accuracy is not high due to the shortcomings of the wet oxidation process in gas-liquid medium pollution control. By filtering the gas and using the pollutant monitoring feedback unit to adjust the control parameters of the oxidation process, the process control parameters are optimized, and the aperture control accuracy is improved.

Description

Technical Field

[0001] The present application relates to the technical field of aperture control, and in particular to a wet oxidation aperture control method for VCSEL chip manufacturing. Background Art

[0002] Vertical Cavity Surface Emitting Laser (VCSEL) is a semiconductor laser widely used in optical communications, laser printing and other fields. The manufacture of VCSEL chips involves multiple complex processes, among which the wet oxidation process is one of the key steps. During the wet oxidation process, the precise aperture is formed by controlling the oxidation conditions, which is crucial to the performance and stability of the VCSEL chip. However, the wet oxidation process has poor repeatability, especially the aperture control, which can lead to inconsistent performance of VCSEL chips in different batches. Different batches of wet oxidation processes may lead to differences in aperture, mainly due to the instability of process parameters and changes in the contamination of gas and liquid media.

[0003] In summary, the prior art has a technical problem that due to the instability of wet oxidation process parameters and the change in the contamination degree of the gas-liquid medium, the pore sizes of different batches vary, which in turn affects the control accuracy of the pore size. Summary of the invention

[0004] The purpose of this application is to provide a wet oxidation aperture control method for VCSEL chip manufacturing, so as to solve the technical problem in the prior art that the apertures of different batches vary due to the instability of wet oxidation process parameters and the change of gas-liquid medium contamination, thereby affecting the control accuracy of the aperture.

[0005] In view of the above problems, the present application provides a wet oxidation aperture control method for VCSEL chip manufacturing, wherein the wet oxidation aperture control method for VCSEL chip manufacturing comprises: connecting a wet oxidation process equipment, connecting the wet oxidation process equipment to a gas filter, filtering the gas medium introduced into the wet oxidation process equipment according to the gas filter, and obtaining the filtered gas medium, wherein the gas medium includes oxygen and water vapor; obtaining a preset reaction area of ​​the chip, and determining a preset aperture parameter based on the preset reaction area of ​​the chip; transporting the filtered gas medium to an oxidation reaction chamber of the wet oxidation process equipment, and determining the process control parameters of the oxidation reaction chamber according to the preset aperture parameter, wherein the process control parameters include temperature, gas flow rate and water vapor concentration; adjusting the process control parameters of the oxidation reaction chamber according to a pollutant monitoring feedback unit to obtain optimized process control parameters; the oxidation reaction chamber wet-oxidizes the VCSEL chip according to the optimized process control parameters.

[0006] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0007] By connecting the wet oxidation process equipment, the wet oxidation process equipment is connected to the gas filter, and the gas medium introduced into the wet oxidation process equipment is filtered according to the gas filter to obtain the filtered gas medium, wherein the gas medium includes oxygen and water vapor; the preset reaction area of ​​the chip is obtained, and the preset aperture parameter is determined based on the preset reaction area of ​​the chip; the filtered gas medium is transported to the oxidation reaction chamber of the wet oxidation process equipment, and the process control parameters of the oxidation reaction chamber are determined according to the preset aperture parameter, wherein the process control parameters include temperature, gas flow rate and water vapor concentration; the process control parameters of the oxidation reaction chamber are adjusted according to the pollutant monitoring feedback unit to obtain the optimized process control parameters; the oxidation reaction chamber wet-oxidizes the VCSEL chip according to the optimized process control parameters. That is, by filtering the gas medium, and using the pollutant monitoring feedback unit to monitor and adjust the process control parameters of the oxidation reaction chamber, the expansion of the oxide layer is judged, and the oxygen flow rate is adjusted to control the growth rate of the oxide layer, thereby accurately controlling the final aperture.

[0008] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented according to the contents of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are specifically cited below. It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present application, nor is it intended to limit the scope of the present application. Other features of the present application will become easy to understand through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the present application or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only exemplary, and for ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0010] Figure 1 A schematic flow chart of a wet oxidation aperture control method for VCSEL chip manufacturing in this application;

[0011] Figure 2 A schematic flow chart of adjusting process control parameters in a wet oxidation aperture control method for VCSEL chip manufacturing in the present application. DETAILED DESCRIPTION

[0012] The present application provides a wet oxidation aperture control method for VCSEL chip manufacturing, which solves the technical problem in the prior art that the instability of wet oxidation process parameters and the change of gas-liquid medium contamination lead to differences in apertures of different batches, thereby affecting the control accuracy of the aperture. By filtering the gas medium and using a pollutant monitoring feedback unit, the process control parameters of the oxidation reaction chamber are monitored and adjusted in real time, and the oxygen flow rate is adjusted to control the growth rate of the oxide layer, thereby accurately controlling the final aperture.

[0013] Below, the technical solutions in the present application will be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments of the present application. It should be understood that the present application is not limited to the example embodiments described herein. Based on the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application. It should also be noted that, for the convenience of description, only the parts related to the present application are shown in the accompanying drawings, rather than all of them.

[0014] For examples, please see the attached Figure 1 The present application provides a wet oxidation aperture control method for VCSEL chip manufacturing, wherein the wet oxidation aperture control method for VCSEL chip manufacturing specifically comprises the following steps:

[0015] Step 1: Connect the wet oxidation process equipment, connect the wet oxidation process equipment to a gas filter, filter the gas medium passing into the wet oxidation process equipment according to the gas filter, and obtain the filtered gas medium, wherein the gas medium includes oxygen and water vapor.

[0016] Specifically, the wet oxidation process equipment in VCSEL (vertical cavity surface emitting laser) chip manufacturing is connected to the gas filter to ensure that the gas medium (including oxygen and water vapor) entering the wet oxidation process equipment is filtered, thereby improving the quality and efficiency of the oxidation process. A gas filter is a device for purifying gas, which contains components such as filter membranes and adsorbents. Its function is to remove impurities and pollutants in the gas medium, such as dust, oil, microorganisms, etc., to ensure the high purity and repeatability of the oxidation process. The gas medium passed into the wet oxidation process equipment is usually a mixture of oxygen and water vapor. The gas filter removes possible pollutants such as particulate matter, organic matter, and metal ions to obtain a high-purity gas medium. By removing impurities in the gas, the possibility of defects forming on the semiconductor material is reduced, thereby improving the quality and uniformity of the oxide layer.

[0017] Step 2: Obtain a preset reaction area of ​​the chip, and determine a preset aperture parameter based on the preset reaction area of ​​the chip.

[0018] Specifically, determine the specific area on the VCSEL chip that needs to be wet oxidized, that is, the preset reaction area of ​​the chip. The preset reaction area refers to a specific area that is pre-defined by the lithography and etching process and is to undergo an oxidation reaction. It is usually a part of the top reflector of the VCSEL, which contains an AlGaAs material layer, which will form an oxide layer during the oxidation process. Further determine the aperture parameters required in the wet oxidation process, such as the size, depth, shape and distribution of the aperture. By accurately determining the reaction area and aperture parameters, it is ensured that the wet oxidation process can be carried out precisely according to the design requirements, thereby improving the manufacturing accuracy and performance of the VCSEL chip.

[0019] Step three: transport the filtered gas medium to the oxidation reaction chamber of the wet oxidation process equipment, and determine the process control parameters of the oxidation reaction chamber according to the preset aperture parameters, wherein the process control parameters include temperature, gas flow rate and water vapor concentration.

[0020] Specifically, the filtered gas medium (oxygen, water vapor) is delivered to the oxidation reaction chamber, which is a closed space for oxidation reaction in the wet oxidation process, usually a furnace that can be heated and controlled. According to the preset aperture parameters determined previously, the process control parameters of the oxidation reaction chamber, including temperature, gas flow rate and water vapor concentration, are set. According to the determined preset aperture parameters, the process control parameters of the oxidation reaction chamber, including temperature, gas flow rate and water vapor concentration, are set to ensure that the oxidation process can achieve the designed aperture size and shape. Temperature is a key factor affecting the rate and effect of wet oxidation, and the optimal oxidation temperature is usually determined by experiment. For example, if the experiment shows that the best oxidation effect can be obtained at 800°C, the temperature will be set as one of the process control parameters. The gas flow rate affects the distribution and flow of the gas medium in the oxidation reaction chamber, thereby affecting the uniformity of the oxidation process. The flow rate usually needs to be determined based on the size of the oxidation reaction chamber and the surface area of ​​the chip. For example, if the experiment shows that the best oxidation uniformity can be obtained at a flow rate of 1 liter / minute, the flow rate will be set as one of the process control parameters. Water vapor concentration is an important factor affecting the oxidation rate and the quality of the oxide layer. The optimal water vapor concentration is usually determined through experiments. For example, if the experiment shows that the best quality of the oxide layer can be obtained at a water vapor concentration of 50%, this concentration will be set as one of the process control parameters. For example, suppose that when manufacturing a VCSEL chip, a circular hole with a diameter of 50 microns needs to be formed on an area of ​​1mm×1mm. Through experiments and theoretical calculations, it was determined that the best oxidation effect and aperture accuracy can be obtained at a temperature of 800°C, a gas flow rate of 1 liter / minute and a water vapor concentration of 50%. Therefore, these parameters are set as the process control parameters of the oxidation reaction chamber. By adjusting the temperature, gas flow rate and water vapor concentration, the growth rate and final size of the oxide layer can be precisely controlled, thereby achieving the designed aperture parameters.

[0021] Step 4: Adjust the process control parameters of the oxidation reaction chamber according to the pollutant monitoring feedback unit to obtain optimized process control parameters.

[0022] Specifically, the pollutant monitoring feedback unit is used to monitor the pollutants that may be generated during the wet oxidation process and adjust the process control parameters according to the monitoring results. It usually includes a pollution monitoring module and a pollution feedback module. The pollution monitoring module obtains pollution data through built-in sensor components, including surface pollution of the reaction chamber, pollution of the reaction water body, and deposited oxide particles. The collected pollution data is analyzed in real time to identify the level of pollutants that may affect the quality of the oxidation aperture. According to the analysis results, the degree of influence of pollutants on the formation of the oxidation aperture, that is, the aperture influence index, is evaluated. The pollution feedback module is used to feed back the aperture influence index to the control system of the oxidation reaction chamber. The control system automatically or manually adjusts the process control parameters, including temperature, gas flow rate, and water vapor concentration, according to the feedback aperture influence index to optimize the oxidation process. Through real-time monitoring and adjustment, the impact of pollutants on the quality of the oxide layer is reduced, ensuring that the wet oxidation process is always in the best state, reducing the generation of pollutants, and improving the manufacturing quality and efficiency of VCSEL chips.

[0023] Step 5: The oxidation reaction chamber performs wet oxidation on the VCSEL chip according to the optimized process control parameters.

[0024] Specifically, the optimized process control parameters are a set of optimal process control parameters obtained by matching and optimizing according to the correlation between the first flow rate and each process control parameter. The optimized process control parameters are input into the oxidation reaction chamber control system, and the control system starts the wet oxidation process according to the optimized process control parameters. During the oxidation process, parameters such as the temperature, gas flow rate and water vapor concentration in the oxidation reaction chamber will be strictly controlled to ensure the quality of the oxide layer and the performance of the VCSEL chip. Wet oxidation is a chemical reaction process carried out in a wet oxidation process equipment, which is used to form a specific oxide layer on the VCSEL chip. By performing wet oxidation according to the optimized process control parameters, it is ensured that the oxidation reaction is carried out under optimal conditions, thereby improving the manufacturing quality and efficiency of the VCSEL chip.

[0025] Further, as attached Figure 2 As shown, step 4 of this application includes:

[0026] The pollutant monitoring and feedback unit includes a pollution monitoring module and a pollution feedback module; the pollution monitoring module obtains pollution sensing data according to the built-in pollution sensor, wherein the pollution sensing data includes the surface contamination degree of the reaction chamber, the pollution degree of the reaction water body and the concentration of deposited oxide particles; the pollution sensing data is analyzed to obtain the aperture influence index; the pollution feedback module adjusts the process control parameters based on the aperture influence index fed back to the control system of the oxidation reaction chamber.

[0027] Specifically, the pollutant monitoring feedback unit is a key component used to monitor pollutants that may be generated during the wet oxidation process and adjust the process control parameters based on the monitoring results. It usually includes two main parts: the pollution monitoring module and the pollution feedback module. Among them, the pollution monitoring module is a device used to monitor the types and concentrations of pollutants generated during the oxidation process in real time. It can detect various gases, particulate matter or other substances that may affect the oxidation process; the pollution feedback module is a device that adjusts the process control parameters in real time based on the data provided by the pollution monitoring module. It can automatically or semi-automatically adjust parameters such as temperature, gas flow rate, and water vapor concentration to optimize the oxidation process and reduce the generation of pollutants.

[0028] The pollution monitoring module includes a pollution sensor for real-time monitoring of the pollution conditions in the oxidation reaction chamber, including the pollution degree of the reaction chamber surface, the pollution degree of the reaction water body, and the concentration of deposited oxide particles. The reaction chamber surface pollution degree refers to the pollution degree of the internal surface of the oxidation reaction chamber, including sediments, particulate matter or other pollutants; the reaction water body pollution degree refers to the pollution degree of the water body used in the wet oxidation process, including dissolved substances, microorganisms or other pollutants; the deposited oxide particle concentration refers to the concentration of oxide particles deposited on the chip or other surfaces during the oxidation process. For example, the pollution monitoring module includes an optical sensor for detecting the pollution degree of the reaction chamber surface. If the sensor detects that the pollution degree of the reaction chamber surface exceeds the set threshold, the pollution monitoring module will record this data and pass it to the pollution feedback module.

[0029] The pollution sensing data collected by the pollution monitoring module is analyzed to obtain the aperture influence index, and the influence of pollutants on the aperture formation process is evaluated, including the concentration, type, and distribution of pollutants. For example, if the pollution sensing data shows that the surface contamination of the reaction chamber is high, it may cause uneven aperture formation. By analyzing these data, the relationship between surface contamination and aperture uniformity is determined to obtain the aperture influence index. The aperture influence index is fed back to the control system of the oxidation reaction chamber, and the process control parameters are adjusted to obtain the optimal oxidation process conditions. The control system is a system used to control the operating parameters of the oxidation reaction chamber, such as temperature, gas flow rate, etc.

[0030] In a specific example, the pollution sensing data collected by the pollution monitoring module are: the surface contamination of the reaction chamber is 0.5ng / cm²; the reaction water pollution is 10ppb; the concentration of deposited oxide particles is 100particles / cm³. Aperture influence indicators: surface contamination exceeding 0.3ng / cm² will affect the uniformity of the oxide layer; water pollution exceeding 5ppb will cause oxide layer defects; particle concentration exceeding 50particles / cm³ may form particle defects in the oxide layer. Based on the above indicators, the pollution feedback module recommends increasing the gas flow rate from 2slm to 2.5slm to improve the cleaning effect, and adjusting the water vapor concentration from 30% to 28% to reduce the deposition of pollutants. Through real-time monitoring and adjustment, the impact of pollutants on the oxide layer is reduced, and combined with the feedback mechanism, the process parameters are adjusted in time to ensure that the oxidation process is carried out under optimal conditions.

[0031] Furthermore, the present application also includes the following steps:

[0032] The pollutant monitoring feedback unit is connected to the pollution removal device; the pollution sensing data of the pollution monitoring module is analyzed to obtain the pollution index; a preset pollution index is configured, and if the pollution index is greater than or equal to the preset pollution index, a filtering program is triggered, and the pollution removal device filters and removes the pollutants in the oxidation reaction chamber according to the filtering program; wherein the filtering program includes gas filtration, liquid filtration and reaction chamber acoustic cleaning.

[0033] Specifically, the pollutant monitoring feedback unit is connected to the pollution removal device so that after the pollutants are monitored, the pollution removal device can be started in time to reduce or eliminate the impact of the pollutants on the wet oxidation process. The pollution removal device is a device used to remove or reduce pollutants generated during the oxidation process, including filters, cleaning systems or other related equipment. The pollution sensor data collected by the pollution monitoring module is analyzed to obtain pollution indicators that reflect the degree and type of pollution in the oxidation reaction chamber. Pollution indicators refer to parameters derived from the analysis of pollution sensor data, which are used to evaluate the degree and type of pollution in the oxidation reaction chamber, including the concentration, distribution, and change trend of pollutants.

[0034] According to the VCSEL chip manufacturing requirements and the environmental conditions of the oxidation reaction chamber, a preset pollution index is configured to trigger the pollution level threshold of the filtering program. When the data collected by the pollution monitoring module shows that the pollution index reaches or exceeds the preset value, the pollutant monitoring feedback unit will send an instruction to the pollution removal device to trigger the filtering program to filter and remove the pollutants in the oxidation reaction chamber to maintain the purity and efficiency of the oxidation process. The filtering program includes gas filtration, liquid filtration, and reaction chamber acoustic cleaning. Among them, gas filtration is usually carried out through the airflow installed in a high-efficiency filter, and a special filter is used to remove gaseous pollutants in the oxidation reaction chamber, including harmful gases, particulate matter or other gas components that may affect the oxidation process. The liquid filtration step uses filters or other separation technologies to remove pollutants in the water, such as dissolved substances, microorganisms or other harmful substances. The reaction chamber acoustic cleaning uses acoustic wave technology to clean the reaction chamber surface. Acoustic cleaning can effectively remove pollutants on the reaction chamber surface and hard-to-reach areas without physical contact or the use of chemical cleaning agents. Through real-time monitoring and filtration, the cleanliness of the environment inside the oxidation reaction chamber is maintained to reduce the impact of pollutants on the oxidation process.

[0035] Furthermore, the present application also includes the following steps:

[0036] The pollution sensing data is analyzed according to the pollution-aperture influence model to obtain the aperture influence index. The method for constructing the pollution-aperture influence model includes: obtaining multiple groups of pollution sensing data samples, including reaction chamber surface contamination samples, reaction water body contamination samples and deposited oxide particle concentration samples; marking the multiple groups of pollution sensing data samples with aperture influence indexes, wherein the aperture influence index is a quantitative measure of the degree of influence of pollutants on the aperture of the VCSEL chip; training a multilayer perceptron neural network with the multiple groups of pollution sensing data samples and identification information of the aperture influence indexes, and constructing the pollution-aperture influence model when the accuracy reaches a preset accuracy.

[0037] Specifically, at different time points or process conditions, pollution sensing data in the oxidation reaction chamber is collected, including data in multiple dimensions such as the surface contamination of the reaction chamber, the contamination of the reaction water, and the concentration of deposited oxide particles. Each group of pollution sensing data samples is analyzed to identify the aperture impact index. The aperture impact index is a quantitative measure of the degree of influence of pollutants on the aperture of the VCSEL chip. Assessing the degree of influence of pollutants on the aperture formation process of the VCSEL chip helps to understand how different types of pollutants affect the formation and quality of the aperture. Using multiple groups of pollution sensing data samples and the corresponding aperture impact index identification information, a multilayer perceptron (MLP) neural network is trained. The multilayer perceptron neural network (MLP) is a feedforward artificial neural network consisting of an input layer, one or more hidden layers, and an output layer. It can simulate complex nonlinear relationships by learning and adjusting its internal parameters.

[0038] Through a large amount of training data, the neural network learns the relationship between input data and output data. Accuracy is an important indicator to measure the performance of machine learning models, especially in classification problems. It indicates the proportion of samples predicted correctly by the model to the total number of samples. It measures the ability of the model to correctly identify positive samples (i.e., the degree to which the aperture is affected by contamination) and negative samples (i.e., the degree to which the aperture is not affected by contamination). Specifically, the accuracy is obtained by adding the number of correctly predicted positive samples and negative samples and then dividing it by the total number of samples. The preset accuracy is a threshold preset before the start of training. It is set based on the needs of the actual application and the possible acceptable error level to determine whether the training effect of the model meets expectations.

[0039] When the training accuracy of the model reaches the preset accuracy, a pollution-aperture influence model is constructed. If the accuracy is lower than this preset value, it may be necessary to readjust the model parameters or use different algorithms for training until a satisfactory accuracy is achieved. The pollution-aperture influence model is used to analyze the pollution sensor data, and the pre-processed pollution sensor data is input into the pollution-aperture influence model, the input pollution sensor data is analyzed, and the aperture influence index is predicted based on the learned parameters and weights. The aperture influence index output by the model is a quantitative value, which indicates the degree of influence that the current pollution sensor data may have on the aperture of the VCSEL chip. By constructing a pollution-aperture influence model, the influence of pollutants on the aperture formation process of the VCSEL chip can be accurately predicted, thereby providing a basis for optimizing the wet oxidation process.

[0040] Furthermore, the present application also includes the following steps:

[0041] According to different batches of VCSEL chips, multiple groups of pollution sensing data samples are output; by analyzing the changes in pollution levels of different batches in the multiple groups of pollution sensing data samples, the model weight parameters of the pollution-aperture influence model are adjusted to obtain an optimized pollution-aperture influence model.

[0042] Specifically, for different batches of VCSEL chips, there are chips with different process conditions, materials or manufacturing time periods. Pollution sensing is performed on each batch of chips to obtain multiple sets of pollution sensing data samples, including the surface contamination of the reaction chamber, the contamination of the reaction water, and the concentration of deposited oxide particles. For example, suppose five batches of VCSEL chips are manufactured within a month, and each batch of chips uses the same materials and processes but is manufactured at different time points. Pollution sensing is performed on each batch of chips to obtain 5 sets of data samples, including the surface contamination of the reaction chamber, the contamination of the reaction water, and the concentration of deposited oxide particles. Comparative analysis is performed on different batches in multiple sets of pollution sensing data samples. Through statistical analysis, pattern recognition, machine learning and other technologies, the changing trends of pollution levels, including pollutant concentration, distribution, type, etc., are focused on to identify the changing trends of pollution levels of different batches of VCSEL chips.

[0043] According to the changes in contamination levels of different batches, the weight parameters of the contamination-aperture effect model are adjusted. The weight parameters control the sensitivity of the model to different input features. Adjusting the parameters makes the model better adapt to changes in contamination levels. After adjusting the weight parameters, an optimized contamination-aperture effect model is obtained, which more accurately predicts the aperture formation quality of different batches of VCSEL chips under changing contamination levels. For example, suppose that among five batches of VCSEL chips, the fourth batch has a significantly higher contamination level than other batches. By analyzing this change, the weight parameters of the contamination-aperture effect model are adjusted to make it more sensitive to high contamination levels. After adjustment, the model can better predict the aperture formation quality of the fourth batch of chips. By adjusting the model weight parameters, the model can adaptively respond to changes in contamination in different batches more accurately.

[0044] Furthermore, the present application also includes the following steps:

[0045] The model weight parameter expression for adjusting the contamination-pore size influence model is: ;in, and are two different batches of pollution sensing data, n is the number of sensing data, , is the difference in contamination levels between batches, is the initial weight of the pollution-pore size effect model, is the reference concentration value of the pollutant.

[0046] Specifically, the model weight parameter expression for adjusting the pollution-pore size effect model is: ,in, The initial weight of the pollution-aperture influence model is the weight setting when the model starts training, which reflects the initial sensitivity of the model to the input data. and are the pollution sensor data of two different batches, which respectively represent the specific values ​​of the pollution sensor data in different batches, reflecting the concentration or degree of pollution in different batches. n is the number of sensor data, that is, the number of data points considered when calculating the difference in pollution levels between batches, reflecting the size of the sample or the breadth of the data set. Therefore, The difference between each data point is weighted to obtain an average value that reflects the overall trend. is the difference in contamination levels between batches, and the calculation formula is , the difference in pollution levels between different batches is measured by calculating the average difference in pollution sensor data between two batches. How much inconsistency exists in the measured values ​​of pollution levels between different batches. If The larger the value, the greater the difference in pollution sensor data between different batches, indicating that the pollution level has significant changes in different production or sampling cycles, which will lead to model weight parameters The larger the adjustment range is. is very small, indicating that the pollution sensor data is relatively consistent between different batches, the pollution level remains stable, and the model weight parameter The adjustment range will also be reduced accordingly. The reference concentration value of the pollutant is a pollution level reference value set based on a certain standard or experimental results, which is used to compare and evaluate the pollution levels of different batches. By considering the difference in pollution levels between different batches, the weight parameters of the pollution-pore size influence model are adjusted. , by calculating the difference in contamination levels between batches and comparing it to the reference concentration value of the contaminant By comparison, an adjustment factor can be obtained to adjust the initial weight , thus obtaining a new weight .

[0047] Further, step five of this application includes:

[0048] A laminar flow generating device is provided at the inlet of the oxidation reaction chamber, and the filtered gas medium is subjected to a first flow rate treatment by the laminar flow generating device to generate a laminar flow gas medium; wherein, a flow rate-laminar flow stability test is performed, and the test data is analyzed to achieve a flow rate with a preset laminar flow stability as the first flow rate.

[0049] Specifically, a laminar flow generating device is set in the nutmeg of the oxidation reaction chamber. The laminar flow generating device is a device for generating laminar gas, and the gas flow is adjusted and controlled by a specific design (such as guide vanes, airflow rectifiers, etc.) to make it a stable laminar state. The laminar flow generating device is used to process the filtered gas medium at a first flow rate to generate a laminar gas medium. Laminar flow is a stable and orderly flow state that helps to improve the uniformity and efficiency of the oxidation reaction. The first flow rate is to use a laminar flow generating device to adjust the flow rate of the filtered gas medium, control the flow state of the gas in the oxidation reaction chamber, and form a stable laminar flow, thereby improving the uniformity and efficiency of the oxidation reaction. By performing a flow rate-laminar flow stability test, by changing the gas flow rate, observing and analyzing the state of the gas flow in the oxidation reaction chamber, and determining the flow rate that reaches the preset laminar flow stability. The preset laminar flow stability refers to the gas flow rate value set during the oxidation reaction to ensure that the oxidation reaction is carried out uniformly, so as to ensure that the gas flow in the oxidation reaction chamber is in a stable laminar state. During the test, the gas flow rate was adjusted and the flow state in the oxidation reaction chamber was observed. When the gas flow reaches a stable laminar state, the flow rate at this time is recorded as the first flow rate. The test data is analyzed to find the flow rate that can make the gas flow form a stable laminar flow. By setting a laminar flow generating device and finding the flow rate of preset laminar flow stability, the stability of the gas flow in the oxidation reaction chamber is ensured, the uniformity and efficiency of the oxidation reaction are improved, and thus the manufacturing quality and efficiency of the VCSEL chip are improved.

[0050] Furthermore, the present application also includes the following steps:

[0051] The first flow rate is input into the control system of the oxidation reaction chamber, and the process control parameters are matched and optimized according to the correlation between the first flow rate and various process control parameters, and the optimized process control parameters are output.

[0052] Specifically, the first flow rate after being processed by the laminar flow generating device is input into the control system of the oxidation reaction chamber. The control system usually includes a central processing unit and related sensors for monitoring and adjusting various parameters in the oxidation process. The control system will match and optimize the process control parameters according to the correlation between the first flow rate and various process control parameters (such as temperature, gas flow rate, water vapor concentration, etc.), and adjust the process parameters such as temperature, gas flow rate, and water vapor concentration to meet the requirements of the first flow rate, thereby ensuring that the oxidation reaction can be carried out efficiently and uniformly. After matching and optimization, the control system will output a set of optimized process control parameters. The optimized process control parameters are adjusted to adapt to the first flow rate, and can ensure that the oxidation reaction is carried out under optimal conditions. By inputting the first flow rate into the control system of the oxidation reaction chamber, and matching and optimizing according to the correlation between the first flow rate and various process control parameters, it is ensured that the oxidation reaction is carried out under optimal conditions, thereby improving the manufacturing quality and efficiency of the VCSEL chip.

[0053] In summary, the wet oxidation aperture control method for VCSEL chip manufacturing provided in this application has the following technical effects:

[0054] By connecting the wet oxidation process equipment, the wet oxidation process equipment is connected to the gas filter, and the gas medium introduced into the wet oxidation process equipment is filtered according to the gas filter to obtain the filtered gas medium, wherein the gas medium includes oxygen and water vapor; the preset reaction area of ​​the chip is obtained, and the preset aperture parameter is determined based on the preset reaction area of ​​the chip; the filtered gas medium is transported to the oxidation reaction chamber of the wet oxidation process equipment, and the process control parameters of the oxidation reaction chamber are determined according to the preset aperture parameter, wherein the process control parameters include temperature, gas flow rate and water vapor concentration; the process control parameters of the oxidation reaction chamber are adjusted according to the pollutant monitoring feedback unit to obtain the optimized process control parameters; the oxidation reaction chamber wet-oxidizes the VCSEL chip according to the optimized process control parameters. That is, by filtering the gas medium and using the pollutant monitoring feedback unit to monitor and adjust the process control parameters of the oxidation reaction chamber in real time, the oxygen flow rate is adjusted to control the growth rate of the oxide layer, thereby accurately controlling the final aperture.

[0055] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

[0056] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application belong to the scope of the present application and its equivalent technology, the present application is also intended to include these modifications and variations.

Claims

1. A wet oxidation aperture control method for VCSEL chip manufacturing, characterized in that: include: Connecting a wet oxidation process device, connecting the wet oxidation process device to a gas filter, filtering a gas medium introduced into the wet oxidation process device according to the gas filter, and obtaining a filtered gas medium, wherein the gas medium includes oxygen and water vapor; Acquire a preset reaction area of ​​the chip, and determine a preset aperture parameter based on the preset reaction area of ​​the chip; The filtered gas medium is transported to the oxidation reaction chamber of the wet oxidation process equipment, and the process control parameters of the oxidation reaction chamber are determined according to the preset pore size parameters, wherein the process control parameters include temperature, gas flow rate and water vapor concentration; Adjusting the process control parameters of the oxidation reaction chamber according to the pollutant monitoring feedback unit to obtain optimized process control parameters; The oxidation reaction chamber performs wet oxidation on the VCSEL chip according to the optimized process control parameters; The pollutant monitoring and feedback unit includes a pollution monitoring module and a pollution feedback module; The pollution monitoring module obtains pollution sensing data according to the built-in pollution sensor, wherein the pollution sensing data includes the pollution degree of the reaction chamber surface, the pollution degree of the reaction water body and the concentration of deposited oxide particles; Analyzing the pollution sensing data to obtain an aperture impact index; The contamination feedback module feeds back the aperture impact index to the control system of the oxidation reaction chamber to adjust the process control parameters.

2. A wet oxidation aperture control method for VCSEL chip manufacturing according to claim 1, characterized in that: The pollutant monitoring feedback unit is connected to the pollution removal device; Analyzing the pollution sensing data of the pollution monitoring module to obtain pollution indicators; A preset pollution index is configured, and if the pollution index is greater than or equal to the preset pollution index, a filtering program is triggered, and the pollution removal device filters and removes pollutants in the oxidation reaction chamber according to the filtering program; Wherein, the filtering procedure includes gas filtration, liquid filtration and reaction chamber ultrasonic cleaning.

3. A wet oxidation aperture control method for VCSEL chip manufacturing according to claim 1, characterized in that: Analyzing the pollution sensing data according to the pollution-aperture influence model to obtain the aperture influence index, and constructing the pollution-aperture influence model includes: Acquire multiple groups of pollution sensing data samples, including reaction chamber surface pollution samples, reaction water pollution samples, and deposited oxide particle concentration samples; Performing aperture impact index identification on the plurality of groups of pollution sensing data samples, wherein the aperture impact index is a quantitative measure of the degree of impact of pollutants on the aperture of the VCSEL chip; The multilayer perceptron neural network is trained with the plurality of groups of pollution sensing data samples and identification information of the identification aperture influence index, and the pollution-aperture influence model is constructed when the accuracy reaches a preset accuracy.

4. A wet oxidation aperture control method for VCSEL chip manufacturing as claimed in claim 3, characterized in that: Constructing the contamination-pore size effect model also includes: Output multiple groups of pollution sensing data samples according to different batches of VCSEL chips; By analyzing the changes in pollution levels of different batches in the multiple groups of pollution sensor data samples, the model weight parameters of the pollution-aperture influence model are adjusted to obtain an optimized pollution-aperture influence model.

5. A wet oxidation aperture control method for VCSEL chip manufacturing as claimed in claim 4, characterized in that: The model weight parameter expression for adjusting the contamination-aperture effect model is: ； in, and are two different batches of pollution sensing data, n is the number of sensing data, , is the difference in contamination levels between batches, is the initial weight of the pollution-pore size effect model, is the reference concentration value of the pollutant.

6. A wet oxidation aperture control method for VCSEL chip manufacturing according to claim 1, characterized in that: A laminar flow generating device is arranged at the inlet of the oxidation reaction chamber, and the laminar flow generating device is used to process the filtered gas medium at a first flow rate to generate a laminar flow gas medium; Wherein, by performing a flow rate-laminar flow stability test, the test data is analyzed to achieve a flow rate for a preset laminar flow stability as the first flow rate.

7. A wet oxidation aperture control method for VCSEL chip manufacturing according to claim 6, characterized in that: After generating laminar gas medium, it also includes: The first flow rate is input into the control system of the oxidation reaction chamber, and the process control parameters are matched and optimized according to the correlation between the first flow rate and various process control parameters, and the optimized process control parameters are output.

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