A diamond polishing method, a diamond and a polishing apparatus therefor

Abstract

The application provides a diamond polishing method, a diamond and a polishing device, and comprises the following steps: attaching a to-be-polished surface of a diamond to a polishing disc and extruding the to-be-polished surface and the polishing disc; continuously irradiating the diamond with low-temperature plasma carrying oxygen free radicals and hydroxyl free radicals, so that the low-temperature plasma activates and modifies the diamond under a preset low-temperature condition and continuously generates active chemical bonds on the to-be-polished surface; polishing the to-be-polished surface by the polishing disc to break the active chemical bonds; and repeatedly generating and breaking the active chemical bonds, so that atomic layers of the to-be-polished surface are removed layer by layer to polish the to-be-polished surface of the diamond. The application realizes fine polishing by the atomic layer removal method under a low-temperature condition, reduces damage to the surface and subsurface of the diamond, and has a mild polishing process and good polishing effect. The diamond obtained by the method has a surface reaching an atomic level smoothness and does not have a collapse edge.

Description

Technical Field

[0001] This invention relates to the field of diamond polishing technology, specifically to a diamond polishing method, diamond, and polishing equipment. Background Technology

[0002] Diamond, due to its unique crystal structure and extremely strong carbon-carbon bonds, possesses excellent mechanical, optical, thermal, and electrical properties, making it a typical multifunctional material with broad application prospects in many high-tech fields such as aerospace, energy, smart sensors, and precision machining. However, diamond is also a typical difficult-to-machine material; its extremely high hardness and excellent chemical stability significantly increase the difficulty of polishing.

[0003] Common diamond polishing methods include mechanical polishing, chemical mechanical polishing (CMP), and triboelectric polishing (TMP). Mechanical polishing utilizes the friction between a polishing tool and the diamond sample to remove material and polish the surface. However, due to the brittle nature of diamond, surface and subsurface damage is inevitable. CMP combines chemical reactions and mechanical action, but the introduction of chemical modifiers can contaminate the diamond surface. TMP utilizes the high-speed friction between a catalytic metal disk and the diamond to generate heat, converting the diamond into graphite or amorphous carbon. The resulting non-diamond phase is then removed through mechanical, diffusion, and oxidation processes, ultimately polishing the diamond. However, its high load, high speed, and high temperature operating principle inevitably introduces severe subsurface damage and leads to the diffusion and contamination of impurities.

[0004] Therefore, there is an urgent need to propose a diamond polishing method to solve at least one of the problems of the above methods. Summary of the Invention

[0005] To overcome the shortcomings of the prior art, this invention provides a diamond polishing method, a diamond, and polishing equipment thereof. The diamond polished by the method of this invention achieves an atomically smooth surface without edge collapse.

[0006] The specific technical solution is as follows:

[0007] A first aspect of the present invention provides a diamond polishing method, the method comprising:

[0008] The diamond surface to be polished is placed against the polishing pad, and the surface to be polished and the polishing pad are pressed against each other;

[0009] The diamond is continuously irradiated with a low-temperature plasma carrying oxygen and hydroxyl radicals, so that the low-temperature plasma activates and modifies the diamond under a preset low-temperature condition, and continuously generates active chemical bonds on the surface to be polished.

[0010] The polishing pad continuously polishes the surface to be polished, causing the active chemical bonds to break; through the repeated cycle of the formation and breaking of the active chemical bonds, the atomic layers of the surface to be polished are removed layer by layer, thereby achieving the polishing of the diamond surface to be polished.

[0011] In one specific embodiment, achieving the preset low temperature condition specifically includes: the low temperature plasma continuously irradiating the diamond, so that the temperature of the surface to be polished reaches a preset temperature, wherein the preset temperature is less than 150°C.

[0012] The phrase "the low-temperature plasma continuously irradiates the diamond" includes: the low-temperature plasma continuously irradiates the entire diamond, and / or, the low-temperature plasma continuously irradiates the surface to be polished, and / or, the low-temperature plasma continuously irradiates the diamond at positions symmetrical about the surface of the polishing pad.

[0013] In one specific embodiment, the step of "pressing the surface to be polished against the polishing pad" includes:

[0014] The diamond is held on the polishing disc by a clamp, and the clamp applies a pressure load to the diamond in the direction of the polishing disc.

[0015] In one specific embodiment, the method further includes:

[0016] The diamond is controlled by the clamp to rotate on the polishing disc with the clamp as the rotation center axis, and / or the diamond is controlled by the clamp to perform translational reciprocating motion on the polishing disc.

[0017] In one specific embodiment, the "polishing disc continuously polishes the surface to be polished" includes: controlling the polishing disc to move in the same or opposite direction as the diamond's movement.

[0018] In one specific embodiment, the "continuous irradiation of the diamond using a low-temperature plasma carrying oxygen free radicals and hydroxyl free radicals" specifically includes:

[0019] The carrier gas is passed through a hydroxyl source to form a reactive gas carrying the hydroxyl source. The reactive gas is then input into a plasma torch and excited to generate the low-temperature plasma. The low-temperature plasma is output from the output end of the plasma torch to continuously irradiate the diamond.

[0020] In one specific embodiment, the method further includes:

[0021] The reactant gas and the carrier gas are regulated by a mass flow meter and then introduced into the plasma torch, with the flow rate of the carrier gas being greater than that of the reactant gas.

[0022] In one specific embodiment, the low-temperature plasma includes microwave plasma;

[0023] The hydroxyl source includes one or more of water vapor, hydrogen peroxide solution, and anhydrous ethanol.

[0024] In a second aspect, the present invention provides a diamond produced by the diamond polishing method described in any of the above embodiments. The diamond polished by the above method achieves an atomically smooth surface and does not exhibit edge collapse.

[0025] A third aspect of the present invention provides a diamond polishing apparatus, comprising: a fixture, a polishing disc, and a plasma generator;

[0026] The clamp is used to hold the diamond so that the surface of the diamond to be polished is in contact with the polishing disc and the surface to be polished is pressed against the polishing disc.

[0027] The plasma generator is used to excite the reactive gas carrying the hydroxyl source to generate low-temperature plasma. The low-temperature plasma carries oxygen free radicals and hydroxyl free radicals to continuously irradiate the diamond, so that the low-temperature plasma activates and modifies the diamond under preset low-temperature conditions, and continuously generates active chemical bonds on the surface to be polished.

[0028] The polishing disc is used to continuously polish the surface to be polished, thereby breaking the active chemical bonds. Through the repeated cycle of the formation and breaking of these active chemical bonds, the atomic layers of the surface to be polished are removed layer by layer, achieving polishing of the diamond surface. Polishing the diamond surface can achieve an atomically smooth finish.

[0029] The present invention has at least the following beneficial effects:

[0030] This invention provides a diamond polishing method, diamond, and polishing equipment. The method achieves fine polishing of diamond through atomic-layer-by-atom removal under the modification effect of low-temperature plasma containing oxygen and hydroxyl radicals. It can be applied to polishing both polycrystalline and single-crystal diamonds, and the resulting roughness reaches levels difficult to achieve with other polishing methods (this application achieves a roughness of 0.79 nm for polycrystalline diamond and 0.13 nm for single-crystal diamond, while the limit for high-temperature polishing of single-crystal diamond is only 0.5 nm). Furthermore, this fine polishing method can be performed at relatively mild temperatures (below 150 degrees Celsius), without needing to reach thousands of degrees. During the polishing process, residual thermal stress and other factors prevent edge collapse of the diamond sample, enabling conformal polishing of the diamond sample and achieving atomic-level smoothness. In addition, in the low-temperature plasma-assisted diamond conformal polishing method of this application, the plasma source can be a low-temperature plasma source such as atmospheric microwave plasma, and the hydroxyl source used to generate hydroxyl radicals can be a substance containing hydroxyl active groups such as hydrogen peroxide solution including water vapor and anhydrous ethanol, which has multiple selectivity and good flexibility. Attached Figure Description

[0031] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 A schematic diagram of the diamond polishing method provided in this application;

[0033] Figure 2 A schematic diagram illustrating the principle of the diamond polishing method provided in this application;

[0034] Figure 3 A schematic diagram of the equipment used in the diamond polishing method provided in this application;

[0035] Figure 4 This is a schematic diagram of the microwave plasma emission spectrum;

[0036] Figure 5 Schematic diagram of the intensity of hydroxyl active particles and polishing temperature under different microwave plasma powers;

[0037] Figure 6 This is a schematic diagram of polishing polycrystalline diamond under microwave power of 150W.

[0038] Figure 7A schematic diagram of polishing polycrystalline diamond under microwave power of 225W;

[0039] Figure 8 (a) is a schematic diagram showing the morphological changes of polycrystalline diamond before and after polishing under microwave power of 150W. Figure 8 (b) is a schematic diagram of the morphological changes of polycrystalline diamond before and after polishing under microwave power of 225W;

[0040] Figure 9 This is a schematic diagram of polishing single-crystal diamond under microwave power of 150W.

[0041] Figure 10 This is a schematic diagram showing the morphological changes of single-crystal diamond before and after polishing at a power of 150W.

[0042] Figure label:

[0043] 1-Diamond; 2-Polishing disc; 3-Clamp; 4-Plasma torch. Detailed Implementation

[0044] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0045] In a first aspect, this invention provides a diamond polishing method that achieves atomic-level fine polishing of diamond at a gentle temperature through layer-by-layer removal. During the polishing process, the diamond sample does not experience edge collapse due to residual thermal stress or other factors. This method is applicable not only to single-crystal diamond polishing but also to polycrystalline diamond polishing. Please refer to... Figure 1 and Figure 2 This method includes:

[0046] S1: Place the diamond surface to be polished against the polishing pad and press the surface to be polished against the polishing pad.

[0047] It should be noted that in this step, the pressure between the diamond surface to be polished and the polishing pad is relatively weak, generally weaker than the pressure between the diamond and the polishing pad in mechanical polishing. For example, please refer to... Figure 3The diamond 1 can be clamped onto the polishing disc 2 using a clamp 3, which applies a pressure load towards the polishing disc 2, thereby pressing the surface of the diamond 1 to be polished against the polishing disc 2. For example, the pressure load can be between 1N and 10N, which is relatively weak and avoids the surface and subsurface damage issues associated with mechanical polishing. In actual operation, the appropriate load can be adjusted based on the size of the diamond 1 and the specific polishing conditions to ensure a tight fit and stable operation between the diamond 1 and the polishing disc 2.

[0048] S2: Diamond is continuously irradiated with low-temperature plasma carrying oxygen and hydroxyl radicals so that the low-temperature plasma activates and modifies the diamond under preset low-temperature conditions, continuously generating active chemical bonds on the surface to be polished.

[0049] Specifically, please refer to Figure 2 Low-temperature plasma carries high concentrations and high activity of oxygen free radicals and hydroxyl free radicals (-O and -OH), which act on the diamond surface to be polished and the surface of the polishing pad to activate and modify the atomic layer, generating active chemical bonds such as C-OH, CO, MO, and M-OH (where M is the surface atom of the polishing pad material).

[0050] Optionally, the low-temperature plasma can be continuously irradiated onto the entire diamond, and / or, continuously irradiated onto the surface of the diamond to be polished, and / or, continuously irradiated onto positions symmetrical to the diamond about the surface of the polishing pad. In other embodiments, the low-temperature plasma may also irradiate other locations, which are not specifically limited here.

[0051] S3: The polishing pad continuously polishes the surface to be polished, breaking the active chemical bonds. Through the repeated cycle of the formation and breaking of active chemical bonds, the atomic layers of the surface to be polished are removed layer by layer, thus polishing the diamond surface.

[0052] Specifically, during the polishing operation of the polishing pad, active chemical bonds are continuously generated on the diamond surface to be polished and chemical bonds are broken under mechanical shearing, accompanied by the generation of new COM chemical bonds. This process is repeated to achieve the removal of atomic layers from the diamond surface to be polished, thereby achieving the polishing effect.

[0053] As can be seen, the diamond polishing method of this application mainly uses low-temperature plasma chemical modification, supplemented by a relatively weak load to achieve material removal. Therefore, the polishing method of this application can effectively remove subsurface damage and amorphous layers of diamond, construct an atomically smooth surface (roughness reaches the sub-nanometer level), and enable the flatness of the diamond surface with a large degree of undulation to eventually approach that of the polishing pad, thereby achieving global planarization of the diamond. In addition, the diamond polishing method of this application does not require a high-temperature, high-load polishing environment, and can achieve fine polishing of diamond under relatively mild conditions.

[0054] In one specific embodiment, achieving the preset low temperature condition specifically includes: continuously irradiating the diamond with low-temperature plasma, so that the temperature of the surface to be polished reaches a preset temperature, which is less than 150°C.

[0055] Specifically, compared to methods such as triboelectric polishing and high-temperature plasma chemical etching (temperatures exceeding 1000°C), the method of this application can be performed at a lower temperature, and the diamond sample will not collapse due to residual thermal stress during the polishing process, thus achieving conformal polishing of the diamond sample. On the other hand, methods such as high-temperature plasma chemical etching, which require high-temperature conditions, can achieve a polishing effect by preferentially removing more obvious protrusions on the diamond surface and thus reducing the height difference of the sample surface. However, during the heating and cooling process, before reaching the polishing temperature, i.e., in the non-selective etching stage, the diamond surface will react with reactive gases (such as oxygen) to form etching pits, which drastically worsens the roughness. In addition, the long-term residual thermal stress can also cause the diamond sample to collapse.

[0056] Optionally, the low-temperature plasma in this application may be, for example, a low-temperature plasma source such as atmospheric microwave plasma. Other low-temperature plasma sources that can play a low-temperature auxiliary role in the polishing process are all within the scope of protection of this application.

[0057] In one specific embodiment, in addition to holding the diamond 1 by the clamp 3, the method may further include:

[0058] The diamond 1 is controlled by the clamp 3 to rotate around the clamp 3 as the rotation center axis on the polishing disk 2, and / or the diamond 1 is controlled by the clamp 3 to perform translational reciprocating motion on the polishing disk 2. Exemplarily, the clamp 3 may include a motor and a rotating shaft (not shown in the figure). The motor drives the rotating shaft to rotate, and the rotating shaft is directly or indirectly connected to the diamond 1, thereby causing the diamond 1 to rotate. The clamp 3 itself may be driven by an external moving mechanism (not shown in the figure), thereby causing the diamond 1 to perform translational reciprocating motion on the polishing disk 2 under the drive of the external moving mechanism. Understandably, by controlling the rotation and translational reciprocating motion of the diamond 1, the mechanical shearing force generated between the surface of the diamond 1 to be polished and the polishing disk 2 can be increased, thereby improving the efficiency and effect of polishing.

[0059] As for the polishing disc 2, it can be controlled to move in the same or opposite direction as the diamond 1. For example, referring to... Figure 3 The clamp 3 can control the diamond 1 to rotate clockwise, while the polishing disc 2 can move in the same direction as the diamond 1, that is, it also rotates clockwise.

[0060] It should be noted that during the polishing process, the direction and speed of the rotation or reciprocating motion between the diamond 1 and the polishing disc 2 need to be coordinated according to the specific polishing phenomenon in order to ultimately achieve the desired polishing effect.

[0061] In one specific embodiment, the "continuous irradiation of diamond using a low-temperature plasma carrying oxygen free radicals and hydroxyl free radicals" specifically includes:

[0062] The carrier gas is passed through a hydroxyl source to form a reactive gas carrying the hydroxyl source. This reactive gas is then input into the plasma torch 4 and excited to generate a cryogenic plasma. The cryogenic plasma is output from the output end of the plasma torch 4 to continuously irradiate the diamond. Optionally, the hydroxyl source includes, but is not limited to, water vapor, hydrogen peroxide solution, and anhydrous ethanol, and can also be other substances containing hydroxyl active groups.

[0063] For example, the applicant experimentally verified the feasibility of the above method. Microwave plasma was selected as the low-temperature plasma, with a power of 150W and 225W. Pure water was used as the hydroxyl source, and argon was used as the carrier gas. Argon carried water vapor through pure water to conduct hydroxyl active particle excitation experiments. During the experiment, plasma optical emission spectra were collected under different conditions to determine the intensity of the hydroxyl active particles, and the temperature at the interface between the diamond surface to be polished and the polishing pad (which can also be understood as the temperature of the surface to be polished) was measured during the processing.

[0064] Please refer to Figure 4Measurements of the emission spectrum of microwave plasma containing hydroxyl sources revealed that the intensity of hydroxyl active particles was very high after the carrier gas flowed through pure water. Furthermore, the intensity and concentration of hydroxyl active particles increased significantly with the increase of microwave plasma power, which can meet the requirements for diamond modification. This is because the particles inside the microwave plasma have a high vibration frequency and high activity.

[0065] Additionally, refer to Figure 5 Temperature measurements revealed that the interface temperatures between the surface to be polished and the polishing pad were 80.3 degrees and 133.3 degrees, respectively, both not exceeding 150 degrees, indicating that the process was relatively gentle.

[0066] Furthermore, this method may also include:

[0067] The reactant gas and carrier gas are regulated by a mass flow meter and then introduced into the plasma torch tube 4, wherein the flow rate of the carrier gas is greater than that of the reactant gas.

[0068] In practical applications, by adjusting parameters such as the type and flow rate of the carrier gas, the low-temperature plasma power, and the irradiation distance, the concentration and intensity of hydroxyl active particles can be changed, thereby producing different lower polishing temperatures.

[0069] The following describes two specific embodiments of this application to demonstrate the specific polishing effect of the diamond polishing method of this application.

[0070] Example 1

[0071] Please refer to Figure 6 and Figure 7 Polycrystalline diamond polishing experiments were conducted under microwave plasma power conditions of 150W and 225W. The interface temperatures between the diamond surface to be polished and the polishing pad were 80.3°C and 133.3°C, respectively, with an applied pressure load of 3N. It was observed that the initial roughness of the polycrystalline diamond samples was very high, reaching hundreds of nanometers, with significant gaps between diamond grains and large surface undulations. After microwave plasma-assisted polishing, the roughness of the diamond surface to be polished decreased significantly, the flatness increased, and the grain boundaries and surface undulations were noticeably reduced. As the polishing process progressed, the roughness of the polycrystalline diamond sample surface to be polished reached the sub-nanometer level (0.79nm), effectively achieving ultra-smooth polishing of the polycrystalline diamond surface.

[0072] The morphology of polycrystalline diamond before and after microwave plasma-assisted polishing was characterized using laser confocal microscopy. The results showed that after polishing, the flatness and smoothness of the polished surface were significantly improved, the height variation between grain boundaries was significantly reduced, and even grain boundary closure was achieved. This allowed for the observation of smooth grain boundaries. (See reference for details.) Figure 8 (a) and Figure 8 (b)

[0073] Example 2

[0074] In another experiment, please refer to Figure 9 Single-crystal diamond polishing experiments were conducted under microwave plasma power of 150W. The interface temperature between the diamond surface to be polished and the polishing pad was 80.3 degrees Celsius, and the applied pressure load was 2N. It can be seen that single-crystal diamond with extremely rough surfaces and high defect content can achieve high-precision, ultra-smooth polishing after microwave plasma-assisted polishing. Furthermore, the surface roughness of the single-crystal diamond sample can reach a very low sub-nanometer level (0.13nm), achieving a smoothness unattainable by current high-temperature plasma polishing methods primarily based on high-temperature chemical etching. Figure 10 As shown, after microwave plasma-assisted polishing, no obvious etching pits or polishing defects can be observed on the polished surface of single-crystal diamond.

[0075] In a second aspect, the present invention provides a diamond produced by the diamond polishing method described in any of the embodiments above. The diamond can be a single-crystal diamond or a polycrystalline diamond. The diamond obtained after polishing avoids surface and subsurface damage, prevents edge collapse, and achieves conformal polishing.

[0076] In a third aspect, the present invention provides a diamond polishing apparatus for implementing the above-described diamond polishing method, comprising: a fixture, a polishing disc, and a plasma generator.

[0077] Specifically, the clamp is used to hold the diamond so that the surface of the diamond to be polished is in contact with the polishing pad, and the surface to be polished and the polishing pad are pressed against each other. In other embodiments, the clamp can be replaced by other adjustment modules used to adjust the position of the diamond so that the surface of the diamond to be polished is in contact with the polishing pad, and the surface to be polished and the polishing pad are pressed against each other.

[0078] The plasma generator is used to excite the reactive gas carrying a hydroxyl source to generate low-temperature plasma. This low-temperature plasma carries oxygen and hydroxyl radicals, which continuously irradiate the diamond, thereby activating and modifying the diamond under preset low-temperature conditions, and continuously generating active chemical bonds on the surface to be polished. In other embodiments, the plasma generator can be selected according to actual conditions, and no specific limitation is made here.

[0079] A polishing pad is used to continuously polish the surface to be polished, thereby breaking active chemical bonds. Through the repeated cycle of active chemical bond formation and breaking, atomic layers of the surface to be polished are removed layer by layer, achieving polishing of the diamond surface. In other embodiments, the polishing pad can be replaced with other polishing tools that provide mechanical shearing force to break active chemical bonds on the surface to be polished.

[0080] In summary, this application provides a diamond polishing method, diamond, and polishing equipment. The method achieves fine polishing of diamond through atomic-layer-by-atom removal under the modification effect of low-temperature plasma containing oxygen and hydroxyl radicals. It can be used for both polycrystalline and single-crystal diamonds, and the roughness after polishing reaches a level difficult to achieve with other polishing methods (this application achieves a roughness of 0.79 nm for polycrystalline diamond and 0.13 nm for single-crystal diamond, while the limit for high-temperature polishing of single-crystal diamond is only 0.5 nm). Furthermore, this fine polishing method can be performed at a relatively mild temperature (below 150 degrees Celsius), without needing to reach thousands of degrees. During the polishing process, residual thermal stress and other factors prevent edge collapse of the diamond sample, enabling conformal polishing of the diamond sample and achieving atomic-level smoothness. In addition, in the low-temperature plasma-assisted diamond conformal polishing method of this application, the plasma source can be a low-temperature plasma source such as atmospheric microwave plasma, and the hydroxyl source used to generate hydroxyl radicals can be a substance containing hydroxyl active groups such as hydrogen peroxide solution including water vapor and anhydrous ethanol, which has multiple selectivity and good flexibility.

[0081] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

[0082] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A diamond polishing method, characterized in that, The method includes: The diamond surface to be polished is placed against the polishing pad, and the surface to be polished and the polishing pad are pressed against each other; The diamond is continuously irradiated with a low-temperature plasma carrying oxygen and hydroxyl radicals to activate and modify the diamond under a preset low-temperature condition, thereby continuously generating active chemical bonds on the surface to be polished. The preset low-temperature condition specifically includes: the low-temperature plasma continuously irradiates the diamond so that the temperature of the surface to be polished reaches a preset temperature, which is less than 150°C. The polishing pad continuously polishes the surface to be polished, causing the active chemical bonds to break; through the repeated cycle of the formation and breaking of the active chemical bonds, the atomic layers of the surface to be polished are removed layer by layer, thereby achieving the polishing of the diamond surface to be polished.

2. The diamond polishing method according to claim 1, characterized in that, The phrase "the low-temperature plasma continuously irradiates the diamond" includes: the low-temperature plasma continuously irradiates the entire diamond, and / or, the low-temperature plasma continuously irradiates the surface to be polished, and / or, the low-temperature plasma continuously irradiates the diamond at positions symmetrical about the surface of the polishing pad.

3. The diamond polishing method according to claim 1, characterized in that, The phrase "pressing the surface to be polished against the polishing pad" includes: The diamond is held on the polishing disc by a clamp, and the clamp applies a pressure load to the diamond in the direction of the polishing disc.

4. The diamond polishing method according to claim 3, characterized in that, The method further includes: The diamond is controlled by the clamp to rotate on the polishing disc with the clamp as the rotation center axis, and / or the diamond is controlled by the clamp to perform translational reciprocating motion on the polishing disc.

5. The diamond polishing method according to claim 4, characterized in that, The phrase "the polishing disc performs continuous polishing operation on the surface to be polished" includes: controlling the polishing disc to move in the same or opposite direction as the diamond's movement.

6. The diamond polishing method according to claim 1, characterized in that, The phrase "continuously irradiating the diamond with a low-temperature plasma carrying oxygen and hydroxyl radicals" specifically includes: The carrier gas is passed through a hydroxyl source to form a reactive gas carrying the hydroxyl source. The reactive gas is then input into a plasma torch and excited to generate the low-temperature plasma. The low-temperature plasma is output from the output end of the plasma torch to continuously irradiate the diamond.

7. A diamond polishing method according to claim 6, characterized in that, The method further includes: The reactant gas and the carrier gas are regulated by a mass flow meter and then introduced into the plasma torch, with the flow rate of the carrier gas being greater than that of the reactant gas.

8. A diamond polishing method according to claim 6, characterized in that, The low-temperature plasma includes microwave plasma; The hydroxyl source includes one or more of water vapor, hydrogen peroxide solution, and anhydrous ethanol.

9. A diamond, characterized in that, The diamond is produced by the diamond polishing method according to any one of claims 1-8.

10. A diamond polishing device, characterized in that, The method for implementing any one of claims 1-8 includes: a fixture, a polishing disc, and a plasma generator; The clamp is used to hold the diamond so that the surface of the diamond to be polished is in contact with the polishing disc and the surface to be polished is pressed against the polishing disc. The plasma generator is used to excite the reactive gas carrying the hydroxyl source to generate low-temperature plasma. The low-temperature plasma carries oxygen free radicals and hydroxyl free radicals to continuously irradiate the diamond, so that the low-temperature plasma activates and modifies the diamond under preset low-temperature conditions, and continuously generates active chemical bonds on the surface to be polished. The polishing pad is used to continuously polish the surface to be polished, so as to break the active chemical bonds; through the repeated generation and breaking of the active chemical bonds, the atomic layers of the surface to be polished are removed layer by layer, thereby achieving the polishing of the diamond surface to be polished.

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