A Hall chip, a Hall sensor and a method for detecting magnetic field components

Abstract

The present application discloses a Hall chip, a Hall sensor and a method for detecting magnetic field components. The Hall chip includes a substrate and a magnetizing body, on which at least four magnetic sensing parts and electrode parts electrically connected to the at least four magnetic sensing parts are formed, and the at least four magnetic sensing parts are distributed in a quadrilateral to form two magnetic sensing parts arranged on a first diagonal and two magnetic sensing parts arranged on a second diagonal, and the orientation of each magnetic sensing part is parallel or approximately parallel to the direction of its corresponding diagonal, and the magnetizing body is covered on the substrate, and the positive projection of the magnetizing body on the substrate has a contour boundary, and the contour boundary is at least partially located in the central area of ​​each magnetic sensing part. The Hall chip has the technical effects of low cost, high installation tolerance, miniaturization and detection of XYZ three-axis magnetic field, and by making the orientation of each magnetic sensing part parallel or approximately parallel to the direction of its corresponding diagonal, it is beneficial to improve the installation tolerance of the magnetizing body and simplify the installation requirements.

Description

Technical Field

[0001] The present application relates to the field of magnetic sensing technology, and in particular to a Hall chip, a Hall sensor, and a method for detecting magnetic field components. Background Art

[0002] Hall chips are widely used in motor drive, current sensing and other fields. The main solution of existing 3D Hall technology is to discretely integrate multiple sensor chips with orthogonal sensitive axes to achieve three-dimensional signal acquisition. However, this type of sensor chip has low integration, large size, and high process difficulty. At the same time, there are existing planar 3D technologies that use magnets to twist parallel magnetic fields to the Hall sensitive direction. Because its signal is sensitive to changes in edge position, and the gain changes dramatically. It brings the problem of too high tolerance requirements for the installation of magnets, which makes it unsuitable for actual production and the zero bias problem of the Hall chip is difficult to solve. Summary of the invention

[0003] In order to overcome the above shortcomings, the purpose of the present application is to provide a Hall chip, a Hall sensor and a method for detecting magnetic field components.

[0004] In order to achieve the above objectives, this application adopts the following technical solutions:.

[0005] The first aspect of the present application discloses a Hall chip, the Hall chip comprising:

[0006] A substrate having at least four magnetic sensing parts and matching electrode parts formed thereon,

[0007] The at least four magnetic induction parts are distributed in a quadrilateral to form two magnetic induction parts arranged on a first diagonal line and two magnetic induction parts arranged on a second diagonal line, the first diagonal line and the second diagonal line are perpendicular to each other, the orientation of each magnetic induction part is parallel or approximately parallel to the direction of the diagonal line corresponding to it, and the electrode part is electrically connected to the matching magnetic induction part;

[0008] A magnetic concentrator is covered on the substrate, and the positive projection of the magnetic concentrator on the substrate has a contour boundary, and the contour boundary is at least partially located in the central area of ​​each of the magnetic sensing parts.

[0009] In a specific embodiment, the angle between the orientation of each magnetic sensing portion and the direction of its corresponding diagonal line is between -10° and 10°.

[0010] In a specific embodiment, each of the magnetic sensing parts has a first symmetry axis, and the direction of the first symmetry axis is perpendicular or approximately perpendicular to the direction of its corresponding diagonal line;

[0011] The portion of the contour boundary on each of the magnetic sensing portions at least partially overlaps or completely overlaps with the corresponding first symmetry axis.

[0012] In a specific embodiment, the positive projection of the magnetic focusing body on the substrate is an N-gon defined by a contour boundary, wherein N is a multiple of 4.

[0013] In a specific embodiment, the thickness of the magnetizing body in the Z-axis direction is between 20 and 200 microns.

[0014] In a specific embodiment, the at least four magnetic sensing portions have a first non-diagonally adjacent pair and a second non-diagonally adjacent pair;

[0015] The distance between the two magnetic induction portions in the first non-diagonally adjacent pair is greater than or less than the distance between the two magnetic induction portions in the second non-diagonally adjacent pair.

[0016] In a specific embodiment, the electrode portion includes:

[0017] Four signal electrodes, and

[0018] at least two working positive electrodes, at least one common working ground electrode and at least two signal ground electrodes; or,

[0019] at least one working positive electrode, at least one common signal ground electrode and at least two working ground electrodes; or,

[0020] a common working positive electrode, at least one signal ground electrode and at least two working ground electrodes,

[0021] The inner periphery of the at least four magnetic induction parts has a center line, and the common signal ground electrode, the common signal ground electrode or the common working positive electrode extends from the center line to the periphery of the at least four magnetic induction parts.

[0022] In a specific embodiment, the current directions of the two magnetic induction parts on the first diagonal line are orthogonal, and the current directions of the two magnetic induction parts on the second diagonal line are orthogonal.

[0023] A second aspect of the present application discloses a Hall sensor, the Hall sensor comprising:

[0024] Encapsulation body;

[0025] The Hall chip as described above is arranged in the package;

[0026] A conditioning circuit, which is electrically connected to the Hall chip;

[0027] A plurality of pins are arranged on two opposite sides of the outside of the package body.

[0028] The third aspect of the present application discloses a method for detecting magnetic field components based on the above-mentioned Hall sensor, the method comprising the following steps:

[0029] Respectively obtaining the signal voltages output by the four magnetic sensing parts and the sensitivity gain coefficients of the four magnetic sensing parts;

[0030] Based on the conditioning circuit, the signal gain of the magnetic induction unit is adjusted to obtain the X-axis sensitivity gain coefficients of the two magnetic induction units arranged on the first diagonal line and the Y-axis sensitivity gain coefficients of the two magnetic induction units arranged on the second diagonal line;

[0031] The Z-axis magnetic field component, the X-axis magnetic field component and the Y-axis magnetic field component are determined according to the signal voltages output by the four magnetic sensing units, the sensitivity gain coefficients of the four magnetic sensing units, the X-axis sensitivity gain coefficient and the Y-axis sensitivity gain coefficient. Beneficial Effects

[0032] In the present application, at least four magnetic sensing parts and electrode parts are formed on the substrate, and the at least four magnetic sensing parts and electrode parts are cut out from the same substrate (wafer) as a whole, so that the spacing between the at least four magnetic sensing parts will not be too large, so that the area of ​​the at least four magnetic sensing parts and electrode parts will not be too large, and then the Hall chip can be packaged in a volume of millimeters squared, so as to realize the miniaturization and low cost of the Hall chip. Two magnetic sensing parts are arranged on the first diagonal and the second diagonal respectively, wherein the first diagonal is perpendicular to the second diagonal, so that the magnetic sensing parts on the two diagonals can detect the X and Y axis magnetic fields respectively, so as to realize the Hall chip sensitive to the magnetic field of the three axes of X / Y / Z. Moreover, the orientation of each magnetic sensing part is parallel or approximately parallel to the direction of the diagonal corresponding to it, which is conducive to improving the installation tolerance of the magnet collector and simplifying the installation requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The accompanying drawings are used to provide an understanding of the technical solution of the present disclosure and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solution of the present disclosure and do not constitute a limitation on the technical solution of the present disclosure. The shapes and sizes of the components in the accompanying drawings do not reflect the actual proportions and are only intended to illustrate the content of the present application.

[0034] Figure 1 The arrangement structure 1 of at least four magnetic sensing parts and electrode parts provided in the first aspect of the present application;

[0035] Figure 2 The second arrangement structure of at least four magnetic induction parts and electrode parts provided in the first aspect of the present application;

[0036] Figure 3The third arrangement structure of at least four magnetic sensing parts and electrode parts provided in the first aspect of the present application;

[0037] Figure 4 The structure of the Hall chip provided in the first aspect of the present application is schematically shown Figure 1 ;

[0038] Figure 5 The structure of the Hall chip provided in the first aspect of the present application is schematically shown Figure 2 ;

[0039] Figure 6 The structure of the Hall chip provided in the first aspect of the present application is schematically shown Figure 3 ;

[0040] Figure 7 The structure of the Hall chip provided in the first aspect of the present application is schematically shown Figure 4 ;

[0041] Figure 8 A schematic diagram of the magnetic field lines of the Hall chip provided in the first aspect of the present application;

[0042] Fig. 9 The structure of the Hall sensor provided in the second aspect of the present application is schematically shown in FIG. Figure 1 ;

[0043] Fig.10 The structure of the Hall sensor provided in the second aspect of the present application is schematically shown in FIG. Figure 2 . DETAILED DESCRIPTION

[0044] The above scheme is further described below in conjunction with specific examples. It should be understood that these examples are used to illustrate the present application and are not limited to the scope of the present application. The implementation conditions adopted in the examples can be further adjusted as the conditions of the specific manufacturer, and the unspecified implementation conditions are usually the conditions in conventional experiments.

[0045] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connecting" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. In this article, "electrical connection" includes the situation where the constituent elements are connected together through an element with some electrical function. "Elements with some electrical function" are not particularly limited as long as they can transfer electrical signals between the connected constituent elements. "Elements with some electrical function" can be, for example, electrodes or wiring, or switching elements such as transistors, or other functional elements such as resistors, inductors or capacitors. "Up", "down", "left", "right", etc. are only used to indicate relative position relationships. When the absolute position of the object being described changes, the relative position relationship may also change accordingly.

[0046] In this application, the directions or positional relationships indicated by the terms "upper", "lower", "inner", "middle", etc. are based on the directions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific direction, or to be constructed and operated in a specific direction.

[0047] The present application discloses a Hall chip, a Hall sensor and a method for detecting magnetic field components. The Hall chip includes a substrate and a magnetizing body. At least four magnetic sensing parts and electrode parts electrically connected to the at least four magnetic sensing parts are formed on the substrate. The at least four magnetic sensing parts are distributed in a quadrilateral to form two magnetic sensing parts arranged on the first diagonal and two magnetic sensing parts arranged on the second diagonal. The orientation of each magnetic sensing part is parallel or approximately parallel to the direction of the diagonal corresponding to it. The magnetizing body is covered on the substrate. The positive projection of the magnetizing body on the substrate has a contour boundary, and the contour boundary is at least partially located in the central area of ​​each magnetic sensing part. The Hall chip has low cost, high installation tolerance, miniaturization and detection of X / Y / Z three-axis magnetic fields. By making the orientation of each magnetic sensing part parallel or approximately parallel to the direction of the diagonal corresponding to it, it is beneficial to improve the installation tolerance of the magnetizing body and simplify the installation requirements.

[0048] Next, combine Figure 1-Figure 8 The Hall chip 100 provided in the first aspect of the present application is described below. The Hall chip 100 has the advantages of low cost, high installation tolerance, miniaturization, and the ability to detect X / Y / Z three-axis magnetic field components.

[0049] The Hall chip 100 includes a substrate and a magnetizing body 30, on which at least four magnetic sensing parts and matching electrode parts 20 are formed. The at least four magnetic sensing parts 10 are distributed in a quadrilateral to form two magnetic sensing parts 10 on a first diagonal m and two magnetic sensing parts 10 on a second diagonal n. The first diagonal m and the second diagonal n are perpendicular to each other. The orientation W of each magnetic sensing part 10 is parallel or approximately parallel to the direction of its corresponding diagonal. The electrode part 20 is electrically connected to the at least four magnetic sensing parts 10. The magnetizing body 30 covers the substrate, and the positive projection of the magnetizing body 30 on the substrate has a contour boundary, and the contour boundary is at least partially located in the central area G of each magnetic sensing part 10.

[0050] It should be noted that at least four magnetic induction parts 10 and matching electrode parts 20 are formed on the substrate, which means that the at least four magnetic induction parts 10 and the electrode parts 20 are cut out from the same substrate (wafer) as a whole. Specifically, a functional layer is formed on a substrate by epitaxial growth or ion implantation, and then the functional layer is patterned by wafer lithography. The patterned functional layer includes at least four magnetic sensing parts 10. Then, electrode parts 20 are made around the at least four magnetic sensing parts 10 by photolithography, so that at least four magnetic sensing parts 10 and electrode parts 20 are formed on the substrate. Finally, the at least four magnetic sensing parts 10 and electrode parts 20 are cut out from the substrate (wafer) as a whole. This design avoids re-packaging between the four magnetic sensing parts 10, further reducing installation errors. Moreover, since the at least four magnetic sensing parts 10 and electrode parts 20 are cut out from the substrate (wafer) as a whole, the spacing between the at least four magnetic sensing parts 10 will not be too large, so that the area of ​​the at least four magnetic sensing parts 10 and electrode parts 20 will not be too large, and the Hall chip 100 can be packaged in a volume of millimeters square, thereby realizing the miniaturization and low cost of the Hall chip 100.

[0051] refer to Figure 1, illustratively, in the present application, the two magnetic induction parts 10 arranged on the first diagonal line m include the first magnetic induction part A and the fourth magnetic induction part D, and the two magnetic induction parts arranged on the second diagonal line n include the second magnetic induction part B and the third magnetic induction part C. Further, there is a spacing between two adjacent magnetic induction parts 10, that is, there is a spacing between the first magnetic induction part A and the second magnetic induction part B and the third magnetic induction part C adjacent thereto. There is a spacing between the fourth magnetic induction part D and the third magnetic induction part C and the second magnetic induction part B adjacent thereto, and such a design is conducive to the arrangement of multiple electrodes in the subsequent electrode part. The four magnetic sensing parts 10 are distributed in a quadrilateral to form two magnetic sensing parts 10 arranged on the first diagonal m and two magnetic sensing parts 10 arranged on the second diagonal n, wherein the direction of the first diagonal m is the X-axis, and the direction of the second diagonal n is the Y-axis. The first magnetic sensing part A and the fourth magnetic sensing part D arranged in the X-axis direction are sensitive to the magnetic fields in the X-axis and Z-axis directions. Since the first magnetic sensing part A and the fourth magnetic sensing part D are themselves sensitive to the magnetic field in the Z-axis direction, by setting a magnet 30 on the first magnetic sensing part A and the fourth magnetic sensing part D, the difference of the X-axis magnetic field can be achieved, so that the magnetic field component in the X-axis direction can be detected; similarly, the second magnetic sensing part B and the third magnetic sensing part C arranged in the Y-axis direction are sensitive to the magnetic field in the Y-axis and Z-axis directions. Since the second magnetic sensing part B and the third magnetic sensing part C are themselves sensitive to the magnetic field in the Z-axis direction, by setting a magnet 30 on the second magnetic sensing part B and the third magnetic sensing part C, the difference of the Y-axis magnetic field can be achieved, so that the magnetic field component in the Y-axis direction can be detected. Furthermore, aligning each magnetic induction portion 10 in parallel or approximately parallel to the direction of its corresponding diagonal line is beneficial to improving the installation tolerance of the magnet focusing body 30 and simplifying the installation requirements of the magnet focusing body 30 .

[0052] Exemplarily, the patterned functional layer includes a cross-shaped functional area or a rectangular functional area (not shown in the attached figure). The shape of the patterned functional layer is not specifically limited herein. The central area G of each magnetic sensing part 10 specifically refers to the intersection area of ​​the cross-shaped functional area, or the middle area of ​​the rectangular functional area.

[0053] refer to Figure 1 and Figure 8In a specific embodiment, the angle between the orientation W of each magnetic induction unit and the direction of its corresponding diagonal (X-axis direction or Y-axis direction) is between -10° and 10°. For example, the angle between the orientation W of the first magnetic induction unit A and the direction of the first diagonal m is between -10° and 10°, and the angle between the orientation W of the second magnetic induction unit B and the direction of the second diagonal n is between -10° and 10°. This design is conducive to improving the installation tolerance of the magnet concentrator. As a preferred embodiment, the angle between the orientation W of each magnetic induction unit 10 and the direction of its corresponding diagonal (X-axis direction or Y-axis direction) is 0°, that is, the orientation W of each magnetic induction unit 10 and the direction of its corresponding diagonal are parallel to each other.

[0054] refer to Figure 2 and Figure 3 In a specific embodiment, the current directions of the two magnetic induction units 10 arranged on the first diagonal line m are orthogonal, and the current directions of the two magnetic induction units 10 arranged on the second diagonal line n are orthogonal. (The current directions are as follows Figure 2-Figure 3 (as shown by the middle arrow), that is, the current direction of the first magnetic induction part A is orthogonal to the current direction of the fourth magnetic induction part D, and the current direction of the second magnetic induction part B is orthogonal to the current direction of the third magnetic induction part C. This design can achieve the purpose of eliminating zero position offset.

[0055] refer to Figure 5 In a specific embodiment, each magnetic sensing portion 10 has a first symmetry axis f; the direction of the first symmetry axis f is perpendicular or approximately perpendicular to the direction of the corresponding diagonal; the perpendicular relationship between the direction of the first symmetry axis f and the direction of the diagonal mainly depends on the parallel relationship between the orientation of the magnetic sensing portion 10 and the direction of the diagonal, and the portion of the contour boundary on each magnetic sensing portion 10 at least partially overlaps with the corresponding first symmetry axis f. As a preferred embodiment, the projection portion of the contour boundary on each magnetic sensing portion 10 completely overlaps with the corresponding first symmetry axis f. Here, taking the positive projection of the focusing magnet 30 on the substrate as a quadrilateral defined by the contour boundary as an example, the relationship between the first side 31 of the above-mentioned contour boundary located on the first magnetic sensing portion A, the first symmetry axis f and the direction (X-axis direction) where the first diagonal m is located is described. The first side 31 of the contour boundary covers the first magnetic sensing portion A, and the first magnetic sensing portion A has a first symmetry axis f that is perpendicular or approximately perpendicular to the direction (X-axis direction) where the first diagonal m is located, wherein the first symmetry axis f and the first side 31 partially overlap or completely overlap.

[0056] refer to Figure 3-Figure 8 In a specific embodiment, the positive projection of the focusing magnet 30 on the substrate is an N-sided polygon defined by the contour boundary, where N is a multiple of 4. Figure 4 , Figure 6 , Figure 7 In the example, N is 4, and the positive projection of the focusing magnet 30 on the substrate is a quadrilateral defined by the contour boundary. Figure 5 Taking N as 8, the positive projection of the focusing magnet 30 on the substrate is an octagon defined by the contour boundary as an example, but it is not limited thereto. Further, the thickness h of the focusing magnet 30 in the Z-axis direction is between 20 and 200 microns.

[0057] Exemplarily, the focusing magnet 30 can be selected to be an iron-nickel alloy, nanocrystal, ferrite or other material with high magnetic permeability. For the production of the focusing magnet 30, the focusing magnet can be directly produced on the substrate by using a photolithography sputtering process. Since this method is to produce the focusing magnet 30 directly on the substrate, there is no installation error, or the focusing magnet 30 is first produced, and then the completed focusing magnet 30 is installed on the substrate. Since each magnetic induction unit 10 in the present application is oriented parallel or approximately parallel to the direction of the corresponding diagonal, even if the focusing magnet 30 is installed, the side length of the N-gon covered on each magnetic induction unit does not completely overlap with the first symmetry axis f of the corresponding magnetic induction unit (such as falling in the central area of ​​the magnetic induction unit, or partially overlapping with the first symmetry axis), the Hall chip can also keep the signal of the magnetic induction unit 10 basically unchanged, and the installation tolerance of the focusing magnet 30 is relatively large.

[0058] refer to Figure 1-Figure 7 In a specific embodiment, at least four magnetic induction parts 10 have a first non-diagonal adjacent pair and a second non-diagonal adjacent pair; wherein the first magnetic induction part A and the second magnetic induction part B are the first non-diagonal adjacent pair, the third magnetic induction part C and the fourth magnetic induction part D are the second non-diagonal adjacent pair, the two magnetic induction parts 10 in the first non-diagonal adjacent pair have a first spacing L1, the two magnetic induction parts 10 in the second non-diagonal adjacent pair have a second spacing L2, and the first spacing L1 is greater than, less than or equal to the second spacing L2. As a preferred embodiment, the first spacing L1 is greater than or less than the first spacing L2, that is, the distance L1 between the first magnetic induction part A and the second magnetic induction part B is greater than or less than the distance L2 between the third magnetic induction part C and the fourth magnetic induction part D, so that the design avoids short circuits between the two magnetic induction parts 10 in the non-diagonal adjacent pairs and the electrode part 20.

[0059] refer to Figure 1-Figure 7 In a specific embodiment, the Hall chip 100 may be a nine-electrode structure (eg Figure 1 , Figure 2 , Figure 4 , Figure 5As shown in the figure, the electrode portion 20 of the Hall chip 100 with a nine-electrode structure includes four signal electrodes 21, at least two working positive electrodes 22a, at least one common working ground electrode 23 and at least two signal ground electrodes 24a. The common working ground electrode 23 here refers to the working ground electrodes of the four magnetic sensing parts 10 connected to each other to form a common working ground electrode 23, and the common working ground electrode 23 is located at the periphery of at least four magnetic sensing parts 10. This design avoids leading out the common working ground electrode 23 by punching holes in the magnetizing body 30. In another embodiment, the arrangement of the electrode portion of the Hall chip 100 with a nine-electrode structure can be arranged according to the size of the subsequent packaging space, such as Figure 1 and Figure 2 The figures show two Hall chips 100 with nine electrodes in two different arrangement structures. The Hall chip 100 can also be a Hall chip 100 with eight electrodes. Figure 3 and Figure 6 As shown, the electrode part of the Hall chip 100 with an eight-electrode structure includes four signal electrodes 21, at least one working positive electrode 22b, at least one common signal ground electrode 24 and at least two working ground electrodes 231. The common signal ground electrode 24 here refers to the signal ground electrodes of the four magnetic sensing parts 10 connected to each other to form a common signal ground electrode 24, and the common signal ground electrode 24 is located at the periphery of the four magnetic sensing parts 10. Figure 7 As shown, the Hall chip 100 with an eight-electrode structure can also include four signal electrodes 21, a common working positive electrode 22c, at least one signal ground electrode 24c and at least two working ground electrodes 231. The common working positive electrode 22c here refers to the working positive electrodes of the four magnetic sensing parts 10 that are connected to each other to form a common working positive electrode 22c, and the common working positive electrode is located at the periphery of the four magnetic sensing parts 10. This design avoids leading out the common signal ground electrode 24 or the common working positive electrode 22c by drilling a hole in the magnet 30.

[0060] refer to Figure 4-Figure 7 Next, the positions of the common working ground electrode 23, the common signal ground electrode 24 and the common working positive electrode 22c are described based on the size relationship between the first spacing L1 and the second spacing L2 in the present application. Furthermore, the inner circle of at least four magnetic sensing parts 10 has a center line 25, and the common working ground electrode 23, the common signal ground electrode 24 or the common working positive electrode 22c extends from the center line 25 to the periphery of the at least four magnetic sensing parts 10. In one case, Figure 4-Figure 6 , the first spacing L1 is greater than the second spacing L2, the common working ground electrode 23 or the common signal ground electrode 24 extends from the center line 25 to the periphery of at least four magnetic sensing parts 10, specifically, Figure 4-Figure 5The Hall chip shown is a Hall chip with a nine-electrode structure, and the common working ground electrode 23 extends from the center line 25 to the periphery of at least four magnetic sensing parts 10, that is, the center line 25 simultaneously connects the working ground electrodes of the four magnetic sensing parts and extends to the periphery of at least four magnetic sensing parts 10 to form the common working ground electrode 23. Figure 6 The Hall chip shown is a Hall chip with an eight-electrode structure, and the common signal ground electrode 24 extends from the center line 25 to the periphery of at least four magnetic sensing parts 10, that is, the center line 25 simultaneously connects the signal ground electrodes of the four magnetic sensing parts 10 and extends to the periphery of at least four magnetic sensing parts 10 to form the common signal ground electrode 24. In another case, as Figure 7 As shown, the first spacing L1 is smaller than the second spacing L2, and the common working positive electrode 22c extends from the center line 25 to the periphery of at least four magnetic sensing parts 10, that is, the center line 25 simultaneously connects the working positive electrodes of the four magnetic sensing parts 10, and extends to the periphery of at least four magnetic sensing parts 10 to form the common working positive electrode 22c, and the signal ground electrodes of at least four magnetic sensing parts 10 extend along the periphery of at least four magnetic sensing parts 10 respectively, and are connected to each other to form a signal ground electrode 24c.

[0061] Next join Figure 9-10 To describe the second aspect of the present application, a Hall sensor is also provided, which includes a package 200, a Hall chip 100, a conditioning circuit 400 and a plurality of pins 300. The Hall chip 100 is arranged in the package 200; the conditioning circuit 400 is electrically connected to the Hall chip 100, and the plurality of pins 300 are arranged on two opposite sides of the outside of the package 200. The Hall chip 100 in this embodiment has been described in detail in the first aspect and will not be repeated here. The number of pins in this embodiment is at least 6.

[0062] In one embodiment, the conditioning circuit 400 can be packaged together with the Hall chip 100 in a package body 200 (eg, Fig.10 As shown in FIG. 1 ), the conditioning circuit 400 may also be located outside the package body 200 (eg Fig. 9 As shown), no excessive requirements are made for the installation position of the conditioning circuit 400. Specifically, the conditioning circuit 400 is connected to the electrode portion through the metal wire 500. Further, for the installation of the Hall chip 100, the Hall chip 100 can be rotated at an angle (such as rotating 90° counterclockwise). This design avoids the risk of short circuit caused by the close distance between multiple metal wires 500.

[0063] The third aspect of the present application further provides a method for detecting magnetic field components based on a Hall sensor, and the method for detecting magnetic field components specifically includes:

[0064] Respectively obtain the signal voltages output by the four magnetic sensing units 10 and the sensitivity gain coefficients of the four magnetic sensing units 10;

[0065] Based on the conditioning circuit 400, the signal gain of the magnetic sensing unit 10 is adjusted to obtain the equal sensitivity gain coefficients of the two magnetic sensing units 10 arranged on the first diagonal line on the X axis; and the equal sensitivity gain coefficients of the two magnetic sensing units 10 arranged on the second diagonal line on the Y axis;

[0066] According to the signal voltage output by the four magnetic sensing units 10 and the sensitivity gain coefficient K of the four magnetic sensing units 10 A , K B , K C , K D , X-axis sensitivity gain coefficient K x , Y-axis sensitivity gain coefficient K y , determine the Z-axis magnetic field component B z , X-axis magnetic field component B x and the Y-axis magnetic field component B y .

[0067] The specific calculation process is as follows.

[0068] The first magnetic sensing part A and the fourth magnetic sensing part D arranged on the first diagonal line m are sensitive to the magnetic field in the X-axis and Z-axis directions. When the X-axis and Z-axis magnetic fields enter the first magnetic sensing part A and the fourth magnetic sensing part D, the first magnetic sensing part A outputs a first signal voltage V A , the fourth signal voltage V output by the fourth magnetic sensing unit D D , V A =K x1 B z +K A B y , V D =K x4 B z -K D B x , where K A is the sensitivity gain coefficient of the first magnetic sensing part A, K D is the sensitivity gain coefficient of the fourth magnetic sensing unit D, K x1 X-axis sensitivity gain coefficient of the first magnetic sensing part A, K x4 The X-axis sensitivity gain coefficient of the fourth magnetic sensing portion D.

[0069] The second magnetic sensing part B and the third magnetic sensing part C set on the second diagonal line n are sensitive to the magnetic field in the Y-axis and Z-axis directions. When the Y-axis and Z-axis magnetic fields enter the second magnetic sensing part B and the third magnetic sensing part C, the second magnetic sensing part B outputs a second signal voltage V B , the third signal voltage V output by the third magnetic sensing unit C C , VB =K y2 B z -K B B y , V C =K y3 B z +K C B y , where K B is the sensitivity gain coefficient of the second magnetic sensing part B, K C is the sensitivity gain coefficient of the third magnetic sensing part C, K y2 The Y-axis sensitivity gain coefficient of the second magnetic sensing part B, K y3 The Y-axis sensitivity gain coefficient of the third magnetic sensing unit C.

[0070] Generally, it is difficult to ensure the accuracy and good symmetry of the position of the discrete magnet 30 when it is installed on the Hall chip 100. The large number of coefficients brings about the problem of troublesome calculation and system response deterioration, so it is necessary to simplify it. The simplification method is: adjust the total gain of the Hall through the rear-end electrical gain of the voltage signal of the magnetic sensing unit 10, so that the gain of the two magnetic sensing units 10 set on each diagonal line is balanced. Specifically, adjust the gain of the first magnetic sensing unit A or the fourth magnetic sensing unit D to the Z-axis magnetic field, so that K X1 =K X4 =K X , adjust the gain of the second magnetic induction unit B or the third magnetic induction unit C to the Z-axis magnetic field so that K y2 =K y3 =K y , then: V A =K x B z +K A B y , V D =K x B z -K D B x , V B =K y B z -K B B y , V C =K y B z +K C B y , and finally the Z-axis magnetic field component B can be obtained by calculation z , X-axis magnetic field component B X and the Y-axis magnetic field component B y :

[0071] B X = (V A -VD ) / (K A +K D ),

[0072] B y = (V C -V B ) / (K C +K B ),

[0073] B z =(V A / K A +V B / K B +V C / K C +V D / K D ) / (K x / K A +K y / K B +K y / K C +K x / K D ).

[0074] The arrangement of at least four magnetic sensing parts in the present application and the symmetry and uniformity of the magnetic field coupling with the structure of the focusing magnet plus the differential mechanism of the signal make it possible for the V to be caused by the displacement on the xy plane or the slight deflection of the angle when the focusing magnet is installed with deviation. A / V C Value and V D / V B The difference result remains unchanged when the amplitude increases or decreases by the same amount. This structure ensures the large tolerance of the position of the magnetizer installation. Since the current directions between the two magnetic sensing parts are orthogonal in the same direction, the low zero offset of the Hall chip is guaranteed.

[0075] The above embodiments are only for illustrating the technical concept and features of the present application, and their purpose is to enable people familiar with the technology to understand the content of the present application and implement it accordingly, and they cannot be used to limit the protection scope of the present application. Any equivalent transformation or modification made according to the spirit of the present application shall be included in the protection scope of the present application.

Claims

1. A Hall chip, characterized in that: include: A substrate having four magnetic sensing parts and matching electrode parts formed thereon, The four magnetic induction parts are distributed in a quadrilateral to form two magnetic induction parts arranged on a first diagonal line and two magnetic induction parts arranged on a second diagonal line, the first diagonal line and the second diagonal line are perpendicular to each other, the orientation of each magnetic induction part is parallel or approximately parallel to the direction of the diagonal line corresponding to it, each magnetic induction part has a first symmetry axis, the direction of the first symmetry axis is perpendicular or approximately perpendicular to the direction of the diagonal line corresponding to it, the four magnetic induction parts have a first non-diagonal adjacent pair and a second non-diagonal adjacent pair; the distance between the two magnetic induction parts in the first non-diagonal adjacent pair is greater than or less than the distance between the two magnetic induction parts in the second non-diagonal adjacent pair, and the electrode part is electrically connected to the matching magnetic induction part; A focusing magnet is covered on the substrate, and the positive projection of the focusing magnet on the substrate has a contour boundary, and the contour boundary is at least partially located in the central area of ​​the magnetic sensing part. The part of the contour boundary on each magnetic sensing part completely coincides with the corresponding first symmetry axis.

2. The Hall chip according to claim 1, characterized in that: The angle between the orientation of each magnetic induction portion and the direction of its corresponding diagonal line is between -10° and 10°.

3. The Hall chip according to claim 1, characterized in that: The positive projection of the magnetic focusing body on the substrate is an N-gon defined by a contour boundary, wherein N is a multiple of 4.

4. The Hall chip according to claim 1, characterized in that: The thickness of the magnetizing body in the Z-axis direction is between 20 and 200 microns.

5. The Hall chip according to claim 1, characterized in that: The electrode portion comprises: Four signal electrodes, and at least two working positive electrodes, at least one common working ground electrode and at least two signal ground electrodes; or, at least one working positive electrode, at least one common signal ground electrode and at least two working ground electrodes; or, a common working positive electrode, at least one signal ground electrode and at least two working ground electrodes, The inner peripheries of the four magnetic induction parts have a center line, and the common signal ground electrode or the common working positive electrode extends from the center line to the peripheries of the four magnetic induction parts.

6. The Hall chip according to claim 1, characterized in that: The current directions of the two magnetic induction parts on the first diagonal line are orthogonal to each other, and the current directions of the two magnetic induction parts on the second diagonal line are orthogonal to each other.

7. A Hall sensor, characterized in that: include: Encapsulation body; The Hall chip according to any one of claims 1 to 6, which is arranged in the package; A conditioning circuit, which is electrically connected to the Hall chip; A plurality of pins are arranged on two opposite sides of the outside of the package body.

8. A method for detecting magnetic field components using a Hall sensor according to claim 7, characterized in that: The steps include: Respectively obtaining the signal voltages output by the four magnetic sensing parts and the sensitivity gain coefficients of the four magnetic sensing parts; Adjusting the signal gain of the magnetic induction unit based on the conditioning circuit to obtain the X-axis sensitivity gain coefficients of the two magnetic induction units arranged on the first diagonal line that are equal; and the Y-axis sensitivity gain coefficients of the two magnetic induction units arranged on the second diagonal line that are equal; The Z-axis magnetic field component, the X-axis magnetic field component and the Y-axis magnetic field component are determined according to the signal voltages output by the four magnetic sensing units, the sensitivity gain coefficients of the four magnetic sensing units, the X-axis sensitivity gain coefficient and the Y-axis sensitivity gain coefficient.

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