Deposition equipment and substrate speed measurement method

Abstract

The present invention provides a deposition device and a substrate speed measurement method. The deposition device includes a reaction chamber and a linear laser. The reaction chamber includes a reaction cavity, within which a tray assembly is rotatably disposed. The linear laser is disposed on the upper side of the substrate, emitting incident light toward the edge of the substrate and the tray assembly to form an irradiation area, and receiving reflected light. The deposition device of the present invention detects the substrate rotation speed using the linear laser, enabling relatively accurate identification of the substrate's rotational state. Substrates of different shapes can be detected as long as the substrates have a variable diameter section, thus offering good compatibility. The deposition device of the present invention does not require additional structures to the associated rotational structure, and does not affect the thermal and flow fields within the reaction chamber. While detecting the substrate rotation speed, it also ensures the uniformity of the epitaxial thin film.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a deposition device and a substrate speed measurement method. Background Art

[0002] With the rapid development of fields such as metal-oxide semiconductor field-effect transistors and insulated gate bipolar transistors, high-quality and low-cost silicon carbide films have become a major demand in today's market. During the thin film deposition process, in order to improve the uniformity of the wafer surface, the wafer needs to be in a rotating state, so one of the important parameters for controlling the epitaxial quality is the rotation speed of the wafer. In order to be able to realize wafer speed measurement, the deposition equipment in the existing technology usually adds some structures to the flotation tray to assist in judgment, which increases the weight of the flotation tray and affects the thermal field of the reaction chamber. At the same time, the increase in the weight of the flotation tray will lead to an increase in the required blowing flow rate, and the blowing flow rate of the flotation tray will affect the flow field of the reaction gas. The thermal field and flow field are crucial for thin film deposition, which leads to poor uniformity of the epitaxial film under the existing technology. Summary of the Invention

[0003] The main purpose of the present invention is to provide a deposition device and a substrate speed measurement method to at least partially solve the technical problems in the related art that the thermal field and flow field are affected and the uniformity of the epitaxial film is poor in order to achieve wafer speed measurement in the deposition device.

[0004] In order to achieve the above-mentioned objectives, the present invention provides a deposition device, comprising a reaction chamber and a linear laser; the reaction chamber comprises a reaction cavity, a tray assembly is rotatably arranged in the reaction cavity to drive the substrate to rotate, the edge of the substrate comprises an arc segment and a diameter-reducing segment whose radius is not equal to that of the arc segment; the linear laser is arranged on the upper side of the substrate, the linear laser emits incident light to the edge of the substrate and the tray assembly to form an irradiation area, and receives reflected light, the maximum distance from the irradiation area to the rotation center of the substrate is greater than the minimum radius of the diameter-reducing segment, and the minimum distance from the irradiation area to the rotation center of the substrate is less than the radius of the arc segment.

[0005] Furthermore, the reaction chamber also includes an upper induction heat generating component located on the upper side of the reaction chamber, a lower induction heat generating component located on the lower side of the reaction chamber, a graphite felt and a cooling quartz wall, the graphite felt is arranged on the outside of the upper induction heat generating component, and the cooling quartz wall is arranged on the outside of the graphite felt.

[0006] Furthermore, the linear laser is arranged on the outside of the reaction chamber, and the reaction chamber is provided with an avoidance hole corresponding to the optical path of the linear laser, and the avoidance hole includes a first through hole, a second through hole and a third through hole; the first through hole is located on the top wall of the upper induction heat generating component, the second through hole is located on the bottom wall of the upper induction heat generating component, and the third through hole is provided on the graphite felt. A first window portion is provided on the cooling quartz wall, and the linear laser is used to emit incident light to the edge of the substrate and the tray assembly through the first window portion, the third through hole, the first through hole, and the second through hole, and receive reflected light through the second through hole, the first through hole, the third through hole, and the first window portion.

[0007] Furthermore, the tray assembly includes an air-floating tray, a carrier plate and a pressure ring. The air-floating tray can be rotatably set on the top wall of the lower induction heat generating component. The carrier plate is located on the air-floating tray. The pressure ring is installed on the carrier plate. The carrier plate is used to support the substrate, and the pressure ring is arranged around the substrate.

[0008] Furthermore, the linear laser is arranged outside the reaction chamber, and the reaction chamber is provided with an avoidance hole corresponding to the optical path of the linear laser. The linear laser includes an emitting end and a receiving end, and the avoidance holes include a fourth through hole, a fifth through hole, a sixth through hole, a seventh through hole, an eighth through hole and a ninth through hole. The fourth through hole and the fifth through hole are located on the top wall of the upper induction heat generating component, the sixth through hole and the seventh through hole are located on the bottom wall of the upper induction heat generating component, the eighth through hole and the ninth through hole are located on the graphite felt, and a second window portion and a third window portion are provided on the cooling quartz wall. The emitting end is used to emit incident light to the edge of the substrate and the tray assembly through the second window portion, the eighth through hole, the fourth through hole, and the sixth through hole, and the receiving end is used to receive reflected light through the seventh through hole, the fifth through hole, the ninth through hole, and the third window portion.

[0009] Furthermore, it also includes an anti-drop protection plate, a first flange and a second flange, the first flange and the second flange are respectively connected to the two ends of the cooling quartz wall, the two ends of the anti-drop protection plate are respectively connected to the first flange and the second flange, and the linear laser is installed on the anti-drop protection plate.

[0010] The present invention also provides a substrate speed measurement method, wherein the edge of the substrate includes an arc segment and a variable diameter segment whose radius is not equal to that of the arc segment. The deposition equipment described above is used, including: emitting incident light to the edge of the substrate and the tray assembly based on a linear laser to form an irradiation area, receiving reflected light, and obtaining detection data of the irradiation area; and determining the rotation speed of the substrate based on the detection data.

[0011] Furthermore, the detection data includes a distance data group and a rotation time, and the distance data group is formed by laser ranging of multiple points of the linear laser. The determination of the rotation speed of the substrate based on the detection data includes: determining the rotation period of the substrate based on the distance data group and the rotation time; and determining the rotation speed based on the rotation period.

[0012] Furthermore, determining the rotation period of the substrate based on the distance data group and the rotation time includes: performing a first operation based on all distance data in the distance data group to determine a first reference value; and determining the rotation period of the substrate based on a first functional relationship in which the first reference value changes with the rotation time.

[0013] Furthermore, before determining the rotation period of the substrate based on the distance data group and the rotation time, the method further includes: dividing the point laser of the linear laser into a plurality of point laser groups, forming a point laser data group by measuring the point laser distance in each of the point laser groups, performing a second operation based on all the point laser data in the point laser data group to determine a second reference value; and forming the distance data group with the second reference values ​​corresponding to the plurality of the point laser data groups as distance data.

[0014] Furthermore, the determining of the rotation period of the substrate based on the first functional relationship in which the first reference value changes with the rotation time specifically includes: determining the first moment and the second moment corresponding to when the first reference value reaches the first preset value and the second preset value based on the first functional relationship; when the first preset value and the second preset value recur, obtaining the third moment of the recurrence of the first preset value and the fourth moment of the recurrence of the second preset value; determining the fifth moment between the first moment and the second moment based on the first moment and the second moment, determining the sixth moment between the third moment and the fourth moment based on the third moment and the fourth moment, and determining the rotation period based on the difference between the sixth moment and the fifth moment.

[0015] Furthermore, the determining of the rotation period of the substrate based on the first functional relationship in which the first reference value changes with the rotation time specifically includes: determining the seventh moment corresponding to when the first reference value reaches a third preset value based on the first functional relationship; and determining the rotation period based on the number of recurrences and recurrence time of the third preset value.

[0016] The deposition apparatus of the present invention includes a reaction chamber, in which a reaction gas passes through a substrate within the reaction chamber, thereby depositing a thin film on the substrate surface. A linear laser is positioned above the substrate, emitting incident light toward the substrate below to form an irradiation area and receiving reflected light. The point laser included in the linear laser can measure the distance between the edge of the substrate and the tray assembly. As the substrate and tray assembly rotate, the data measured by the linear laser reflects the rotational state of the substrate, thereby enabling detection of the substrate's rotational speed. The linear laser comprises multiple point lasers, enabling distance measurement at different radial positions along the edge of the substrate. As long as the radius of the substrate's variable diameter section changes to a certain extent compared to the circular arc section, when the variable diameter section rotates to a position corresponding to the irradiation area, the relevant measurement data of the multiple point lasers will change, thereby enabling more accurate identification of the substrate's rotation. This configuration can detect substrate rotational speed for substrates of varying shapes, as long as the substrate has a variable diameter section. Therefore, the present invention has good compatibility. Compared with the solution of adding structures to the flotation tray to assist in detecting the substrate rotation speed, the deposition equipment of the present invention does not need to add other structures to the rotating structure such as the tray assembly, and will not have a significant impact on the thermal field and flow field in the reaction chamber. While realizing the detection of the substrate rotation speed, it ensures the uniformity of the epitaxial film.

[0017] The substrate speed measurement method of the present invention uses a linear laser to emit incident light to the substrate below to form an irradiation area and receive reflected light. The point laser included in the linear laser can measure the distance between the edge of the substrate and the tray assembly. As the substrate and the tray assembly rotate, the detection data obtained by the linear laser can reflect the rotation state of the substrate (including but not limited to parameters such as rotation cycle and rotation time), thereby determining the rotation speed of the substrate. The linear laser has multiple point lasers, which can measure the distance to different radial positions of the edge of the substrate. As long as the radius of the variable diameter section of the substrate changes to a certain extent compared with the circular arc section, when the variable diameter section rotates to the position corresponding to the irradiation area, it will cause the distance measurement related data of the multiple point lasers to change, and can more accurately identify the rotation of the substrate. For substrates of different shapes, as long as they have variable diameter sections, the function of detecting the substrate rotation speed can be achieved by the above-mentioned method. Therefore, the present invention has good compatibility. Compared with the solution of adding a structure to the flotation tray to assist in detecting the substrate rotation speed, the substrate speed measurement method of the present invention does not need to add other structures to the rotating structure such as the tray assembly, and will not have a significant impact on the thermal field and flow field in the reaction chamber. While realizing the detection of the substrate rotation speed, the uniformity of the epitaxial film is guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings, which constitute part of this application, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an undue limitation of the present invention. In the accompanying drawings:

[0019] Figure 1 This is a schematic diagram of a cross-sectional structure of a deposition device provided by the present invention;

[0020] Figure 2 The second schematic diagram of the cross-sectional structure of the deposition device provided by the present invention;

[0021] Figure 3 A schematic cross-sectional view of the tray assembly provided by the present invention;

[0022] Figure 4 The first schematic diagram of the state corresponding to the rotation of the incident light with the substrate as a reference provided by the present invention;

[0023] Figure 5 The second schematic diagram of the state corresponding to the rotation of the incident light with the substrate as a reference provided by the present invention;

[0024] Figure 6 The third schematic diagram of the state corresponding to the rotation of the incident light with the substrate as a reference provided by the present invention;

[0025] Figure 7 A schematic structural diagram of a substrate provided by the present invention;

[0026] Figure 8 The function image formed by the first reference value and the rotation time provided by the present invention.

[0027] The above drawings include the following reference numerals:

[0028] 01. First through hole; 02. Second through hole; 03. Third through hole; 04. Fourth through hole; 05. Fifth through hole; 06. Sixth through hole; 07. Seventh through hole; 08. Eighth through hole; 09. Ninth through hole; 1. Reaction chamber; 10. Reaction chamber; 11. Upper induction heat generating component; 12. Lower induction heat generating component; 13. Graphite felt; 14. Cooling quartz wall; 141. First window portion; 142. Second window portion; 143. Third window portion; 2. Linear laser; 21. Transmitter; 22. Receiving end; 3. Tray assembly; 31. Air-floating tray; 32. Carrier; 33. Pressure ring; 4. Substrate; 41. Arc segment; 42. Variable diameter segment; 5. Anti-drop protection plate. DETAILED DESCRIPTION

[0029] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0030] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components and / or combinations thereof.

[0031] Unless otherwise specifically stated, the relative arrangement of the parts and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the drawings are not drawn according to actual proportional relationships. The technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar numbers and letters represent similar items in the following figures, and therefore, once an item is defined in one figure, it does not need to be further discussed in subsequent figures.

[0032] The present invention provides a deposition device. In the embodiments, a silicon carbide epitaxial device is used as an example for description. However, the configuration of using a linear laser to measure the velocity of a substrate in a reaction chamber proposed in the present invention is also applicable to other deposition devices.

[0033] In one embodiment of the present invention, the deposition equipment is a silicon carbide epitaxial growth equipment, which includes a reaction chamber 1 and a linear laser 2. The reaction chamber 1 includes a reaction chamber 10. A tray assembly 3 is rotatably arranged in the reaction chamber 10 to drive the substrate 4 to rotate. The edge of the substrate 4 includes an arc segment 41 and a variable diameter segment 42 whose radius is not equal to the arc segment 41. The linear laser 2 is arranged on the upper side of the substrate 4. The linear laser 2 emits incident light toward the edge of the substrate 4 and the tray assembly 3 to form an irradiation area, and receives reflected light. The maximum distance from the irradiation area to the rotation center of the substrate 4 is greater than the minimum radius of the variable diameter segment 42 (Note: the "minimum radius" of the variable diameter segment 42 here does not implicitly limit the variable diameter segment 42 to necessarily include an arc segment. The "minimum radius of the variable diameter segment 42" here refers to the minimum distance from the variable diameter segment to the rotation center of the substrate 4). The minimum distance from the irradiation area to the rotation center of the substrate 4 is less than the radius of the arc segment 41.

[0034] Combine Figure 1 and Figure 2 As shown, a reaction chamber 10 is provided in the reaction chamber 1. An opening is usually provided on one side of the reaction chamber 1 for the substrate 4 to be placed in the reaction chamber 1. The tray assembly 3 is rotatably arranged in the reaction chamber 10. In the illustrated embodiment, an air-floating tray assembly is used as an example for explanation. When using an air-floating tray, the tray assembly 3 is usually driven to rotate by blowing air into the tray assembly 3, thereby driving the substrate 4 to rotate. Figures 4 to 7 Taking the substrate 4 shown as an example, the substrate 4 has an arc segment 41 and a variable diameter segment 42 whose radius is not equal to the arc segment 41. Assuming that the radius of the substrate 4 corresponding to the arc segment 41 is R1, it can be seen that the radius R1 of any point on the arc segment 41 is equal. Assuming that the radius of the substrate 4 corresponding to the variable diameter segment 42 is R2 ("radius R2" here means the distance R2, and is not used to implicitly limit the variable diameter segment 42 to include an arc portion), the shape of the variable diameter segment 42 can be selected as needed. For example, in this embodiment, the variable diameter segment 42 is a straight line segment, and the radii R2 corresponding to different points on the variable diameter segment 42 may be equal or unequal. Theoretically, the variable diameter segment 42 can be understood as at least one point in the variable diameter segment 42 having a corresponding radius R2 that is not equal to the radius R1. For example, the variable diameter segment 42 can also be a U-shaped groove, a V-shaped groove, etc., as long as the radius of the variable diameter segment 42 changes to a certain extent compared to the arc segment 41. As shown Figure 1 In the embodiment shown, the transmitting end and the receiving end of the linear laser 2 are integrated. Figure 2In the illustrated embodiment, the transmitting end 21 and receiving end 22 of the linear laser 2 are separate, with a predetermined angle between the incident light and the reflected light. The linear laser 2 is composed of multiple point lasers arranged in a straight line, each capable of distance measurement. The incident light emitted by all the point lasers forms an irradiation area. The point lasers measure the distance between the substrate 4 and the tray assembly 3 within the irradiation area (the "distance" in "distance measurement" here refers to the distance between the laser and the substrate or the tray assembly), generating corresponding data. When the variable diameter section 42 of the substrate 4 rotates to correspond to the irradiation area, the relevant values ​​of the point laser distance measurement will also change. This is equivalent to reflecting the rotational state of the substrate 4 through the changes in the point laser distance measurement data, thereby assisting in determining the rotational speed of the substrate 4.

[0035] It should be noted that the irradiation area formed by the linear laser 2 is usually as follows Figures 4 to 6 As shown in the figure, the linear laser 2 is arranged along the radial direction of the substrate 4. The linear laser 2 can also be arranged at a certain angle relative to the radial direction of the substrate 4 as needed, as long as the laser points of the linear laser 2 correspond to different radial positions. The irradiation area formed by the incident light emitted by the linear laser 2 can be referred to. Figures 4 to 6 As shown, the maximum distance from the irradiation area to the rotation center of the substrate 4 (i.e., the distance from the outermost end of the irradiation area in the figure to the rotation center of the substrate 4) is greater than the minimum radius of the variable diameter section 42, and the minimum distance from the irradiation area to the rotation center of the substrate 4 (i.e., the distance from the innermost end of the irradiation area in the figure to the rotation center of the substrate 4) is less than the radius of the arc section 41, so as to ensure that the irradiation area can scan the variable diameter section 42 when the substrate 4 rotates, thereby realizing the speed measurement function of the substrate 4; in addition, the linear laser 2 can be installed in the reaction chamber 10 or other positions outside the reaction chamber 10, and can also be installed on the corresponding structure in the deposition equipment through other structures, and the angle of the linear laser 2 can be adjusted as needed, as long as the linear laser 2 can be located on the upper side of the substrate 4 (i.e., along the Figure 1 and Figure 2 The Z axis is on the positive side).

[0036] The deposition device of the present invention includes a reaction chamber 1, and the reaction gas passes through the substrate 4 in the reaction chamber 10, thereby depositing a thin film on the surface of the substrate 4. The linear laser 2 is arranged on the upper side of the substrate 4, thereby emitting incident light to the substrate 4 below to form an irradiation area and receiving reflected light. The point laser included in the linear laser 2 can measure the distance between the edge of the substrate 4 and the tray assembly 3. As the substrate 4 and the tray assembly 3 rotate, the linear laser 2 can reflect the rotation state of the substrate 4 through the distance measurement data, so as to realize the function of detecting the rotation speed of the substrate 4; the linear laser 2 has multiple point lasers, which can measure the distance at different radial positions of the edge of the substrate 4. As long as the diameter-changing section 42 of the substrate 4 undergoes a certain degree of radius change compared to the circular arc section 41, when the diameter-changing section 42 rotates to the position corresponding to the irradiation area, it will cause the distance measurement related data of the multiple point lasers to change (for example Figure 3 In the embodiment, because there is a gap between the tray assembly 3 and the substrate 4, the distance from the line laser 2 to the bottom of the gap is significantly different from the distance from the line laser 2 to the upper surface of the substrate 4, or the distance from the line laser 2 to the tray assembly 3 (not the "previously mentioned gap") is significantly different from the distance from the line laser 2 to the substrate 4. Therefore, as the substrate 4 rotates, the data measured by the line laser 2 will change. Furthermore, in some embodiments, Figure 3 The difference is that the substrate 4 is located in the groove of the carrier plate 32. Similarly, as the substrate 4 rotates, the data measured by the linear laser 2 will also change. The linear laser 2 (or its related controller) can more accurately identify the rotation of the substrate 4. For substrates 4 of different shapes, as long as they have a variable diameter section 42, their rotation speed can be detected through the above-mentioned setting. Therefore, the present invention has good compatibility. Compared with the solution of adding a structure to the floating tray to assist in detecting the substrate rotation speed, the deposition equipment of the present invention does not need to add other structures to the rotating structure such as the tray assembly 3, and will not have a significant impact on the thermal field and flow field in the reaction chamber 1. While realizing the detection of the substrate 4 rotation speed, it also ensures the uniformity of the epitaxial film.

[0037] Furthermore, the reaction chamber 1 further comprises an upper induction heat generating component 11 located on the upper side of the reaction chamber 10, a lower induction heat generating component 12 located on the lower side of the reaction chamber 10, a graphite felt 13 and a cooling quartz wall 14. The graphite felt 13 is arranged on the outer side of the upper induction heat generating component 11, and the cooling quartz wall 14 is arranged on the outer side of the graphite felt 13. Figure 1 and Figure 2As shown, the upper induction heat generating component 11 and the lower induction heat generating component 12 play a heating role. They can sense the changing magnetic field in the coil located outside the cooling quartz wall 14 and generate heat. Graphite felt 13 is usually provided on the outside of the upper induction heat generating component 11 and the outside of the lower induction heat generating component 12 to play a role in heat insulation. Figure 1 and Figure 2 As shown in the figure, the upper side, left side and right side of the upper induction heat generating component 11 are covered with graphite felt 13, and the upper side, left side and right side of the lower induction heat generating component 12 are covered with graphite felt 13. It can be understood that for this embodiment, the graphite felt 13 should be arranged at least on the outside of the upper induction heat generating component 11, and the cooling quartz wall 14 is covered on the outside of the graphite felt 13. Cooling water is usually provided inside the cooling quartz wall 14 to achieve water cooling. The coverage range of the graphite felt 13 and the cooling quartz wall 14 should be designed according to needs and is not limited here.

[0038] Optionally, the linear laser 2 is arranged outside the reaction chamber 1, and the reaction chamber 1 is provided with an avoidance hole corresponding to the optical path of the linear laser 2, and the avoidance hole includes a first through hole 01, a second through hole 02 and a third through hole 03; the first through hole 01 is located on the top wall of the upper induction heat generating component 11, the second through hole 02 is located on the bottom wall of the upper induction heat generating component 11, and the third through hole 03 is provided on the graphite felt 13. A first window portion 141 is provided on the cooling quartz wall 14, and the linear laser 2 is used to emit incident light to the edge of the substrate 4 and the tray assembly 3 through the first window portion 141, the third through hole 03, the first through hole 01, and the second through hole 02, and receive reflected light through the second through hole 02, the first through hole 01, the third through hole 03, and the first window portion 141.

[0039] Combine Figure 1 As shown, the linear laser 2 is an integrated type (i.e., the transmitting end and the receiving end are integrated). The linear laser 2 is arranged outside the reaction chamber 1 and on the upper side of the substrate 4, which is equivalent to the incident light being perpendicular or substantially perpendicular to the plane where the substrate 4 is located. The incident light passes through the first window portion 141, the third through hole 03, the first through hole 01, and the second through hole 02 in sequence until it irradiates the edge of the substrate 4. The reflected light passes through the second through hole 02, the first through hole 01, the third through hole 03, and the first window portion 141 in sequence until it returns to the receiving end of the linear laser 2. Cooling water is provided in the cooling quartz wall 7 around the first window portion 141. In order to ensure that it does not affect the optical path of the laser, cooling water is usually not provided inside the first window portion 141. The specific shapes of the first through hole 01, the second through hole 02, and the third through hole 03 are not limited as long as they can allow the laser to pass through smoothly.

[0040] In addition, it is understood that the linear laser 2 can also be used as Figure 2 The transmitter 21 and the receiver 22 are split structures. As long as the interval between the transmitter 21 and the receiver 22 is small enough, the first through hole 01, the second through hole 02, the third through hole 03 and the first window portion 141 can still meet the requirements of the passage of incident light and reflected light. No specific restrictions are imposed on the linear laser 2 here.

[0041] In this way, by setting the first through hole 01, the second through hole 02, the third through hole 03 and the first window portion 141, the light path from the upper side of the reaction chamber 10 to the reaction chamber 10 is unobstructed, thereby preventing other structures of the deposition equipment from obstructing the laser of the linear laser 2, ensuring the realization of the speed measurement function of the substrate 4, and further facilitating the improvement of the uniformity of the epitaxial thin film.

[0042] Furthermore, the tray assembly 3 includes an air-floating tray 31, a carrier plate 32 and a pressure ring 33. The air-floating tray 31 can be rotatably arranged on the top wall of the lower induction heat generating component 12. The carrier plate 32 is located on the air-floating tray 31. The pressure ring 33 is installed on the carrier plate 32. The carrier plate 32 is used to support the substrate 4. The pressure ring 33 is arranged around the substrate 4.

[0043] Combine Figure 3 As shown, the air-floating tray 31 can be driven to rotate by blowing air onto the air-floating tray 31, the carrier 32 is installed on the air-floating tray 31, the pressure ring 33 is installed on the carrier 32, the substrate 4 is located on the carrier 32, and the entire tray assembly 3 rotates together, thereby driving the substrate 4 to rotate. The pressure ring 33 is annular as a whole, and the substrate 4 is located on the inner ring side of the pressure ring 33.

[0044] In this way, the rotation process of the tray assembly 3 is realized by the air floating tray 31, the carrier plate 32 is used to support the substrate 4, and the pressure ring 33 plays a limiting role on the circumference of the substrate 4 to ensure that the substrate 4 can rotate according to the design requirements.

[0045] Optionally, combined Figure 2As shown, the linear laser 2 is arranged outside the reaction chamber 1, and the reaction chamber 1 is provided with an avoidance hole corresponding to the optical path of the linear laser 2. The linear laser 2 includes an emitting end 21 and a receiving end 22. The avoidance hole includes a fourth through hole 04, a fifth through hole 05, a sixth through hole 06, a seventh through hole 07, an eighth through hole 08 and a ninth through hole 09. The fourth through hole 04 and the fifth through hole 05 are located on the top wall of the upper induction heat generating component 11, and the sixth through hole 06 and the seventh through hole 07 are located on the top wall of the upper induction heat generating component 11. 1, the eighth through hole 08 and the ninth through hole 09 are located on the graphite felt 13, and the cooling quartz wall 14 is provided with a second window portion 142 and a third window portion 143. The emitting end 21 is used to emit incident light to the edge of the substrate 4 and the tray assembly 3 through the second window portion 142, the eighth through hole 08, the fourth through hole 04, and the sixth through hole 06, and the receiving end 22 is used to receive reflected light through the seventh through hole 07, the fifth through hole 05, the ninth through hole 09 and the third window portion 143.

[0046] Combine Figure 3 The figure illustrates the illumination range a of the linear laser 2. The incident light illuminates the edge of the substrate 4 and the pressure ring 33, allowing for more accurate determination of the substrate 4's rotational state and, to a certain extent, determining the relative position between the substrate 4 and the pressure ring 33, thereby determining whether the substrate 4 is properly installed. For tray assemblies 3 without a pressure ring 33 or with other related features, the incident light illumination range a should cover the edge of the substrate 4 and the portion of the tray assembly 3 surrounding the edge of the substrate 4.

[0047] Combine Figure 2 As shown, the linear laser 2 has an emitting end 21 and a receiving end 22. There is a certain distance between the emitting end 21 and the receiving end 22, so that the optical path forms a triangular reflection. In this way, the incident light emitted by the point laser on the edge of the substrate 4 on the linear laser 2 reaches the substrate 4 through a first distance, and the incident light emitted by the point laser on the pressure ring 33 on the linear laser 2 reaches the pressure ring 33 through a second distance. Compared to Figure 1 As shown in the setting, this triangular setting of the optical path makes the difference between the first distance and the second distance larger, so that as the substrate 4 rotates, the data measured by the linear laser 2 changes more obviously, and the slight vibration occurring during the rotation of the substrate 4 will have less impact on the data, which is conducive to more accurate detection of the rotation speed of the substrate 4.

[0048] Furthermore, it includes an anti-drop protection plate 5, a first flange, and a second flange. The first flange and the second flange are respectively connected to the two ends of the cooling quartz wall 14, and the two ends of the anti-drop protection plate 5 are respectively connected to the first flange and the second flange. The linear laser 2 is mounted on the anti-drop protection plate 5.

[0049] Combine Figure 1 and Figure 2 As shown, the anti-drop protection plate 5 is located on the upper side of the reaction chamber 1 (i.e., along the positive side of the Z axis in the figure), and its two ends are respectively connected to support plates for installing the first flange and the second flange. The first flange and the second flange are installed at the two ends of the cooling quartz wall 14 (the first flange and the second flange are not shown in the figure), thereby fixing the anti-drop protection plate 5. The anti-drop protection plate 5 protects other structures of the deposition equipment and prevents foreign objects from falling and damaging the deposition equipment. The linear laser 2 can be fixedly mounted on the anti-drop protection plate 5.

[0050] In this way, the anti-drop protection plate 5 protects other structures of the deposition equipment and can also be used to fix the linear laser 2 to ensure the stability of the linear laser 2, which is beneficial to improving the stability of the rotation speed of the detection substrate 4.

[0051] It should be understood that the shapes of the supporting area of ​​the carrier plate 32 and the inner annular surface of the pressure ring 33 match the edge shape of the substrate 4 .

[0052] Combine Figures 3 to 7 As shown, the diameter-changing section 42 is a straight section, and the substrate 4 forms a disk shape with a portion cut off, so that the substrate 4 itself is a non-rotating figure. The rotation state of the substrate 4 can be identified by the feature of the diameter-changing section 42, thereby detecting the rotation speed of the substrate 4.

[0053] The present invention also provides a substrate speed measurement method, wherein the edge of the substrate 4 includes an arc segment 41 and a variable diameter segment 42 having a radius unequal to that of the arc segment 41, and the deposition device described above is used, comprising:

[0054] S100, emitting incident light to the edge of the substrate 4 and the tray assembly 3 based on the linear laser 2 to form an irradiation area, receiving reflected light, and acquiring detection data of the irradiation area;

[0055] S200: Determine a rotation speed of the substrate based on the detection data.

[0056] In step S100, the linear laser 2 emits incident light to the edge of the substrate 4 to form a Figures 3 to 6 The irradiation area shown in the figure is obtained, and the reflected light is received, thereby measuring the distance between the edge of the substrate 4 and the tray assembly 3 through multiple point lasers of the linear laser 2, thereby obtaining the detection data of the irradiation area.

[0057] In step S200, since the substrate 4 itself is non-circular (i.e., it has a variable diameter section 42, and the radius of the variable diameter section 42 changes to a certain extent compared to the radius of the arc section 41), these detection data reflect the rotation state of the substrate 4. By processing these detection data, the rotational speed of the substrate 4 can be calculated.

[0058] It should be noted that the “radius of the diameter-changing section 42 ” in this specification only describes the distance from each point on the diameter-changing section 42 to the rotation center of the substrate 4 , and does not limit the diameter-changing section 42 to necessarily being an arc shape.

[0059] In the illustrated embodiment, the tray assembly 3 of the deposition apparatus includes an air flotation tray 31, a carrier plate 32, and a pressure ring 33. The carrier plate 32 is mounted on the air flotation tray 31 to support the substrate 4, and the pressure ring 33 is mounted on the carrier plate 32 to surround the substrate 4. Incident light irradiates the edge of the substrate 4 and the pressure ring 33 to form an irradiation area. The specific structure of the tray assembly 3 is not limited here; the specific irradiation target of the incident light should be designed based on the specific structures of the tray assembly 3 and the substrate 4.

[0060] Furthermore, the detection data includes a distance data set and a rotation time, and the distance data set is formed by laser ranging at multiple points of the linear laser 2. In the step S200, the rotation speed of the substrate 4 is determined based on the detection data, including:

[0061] S210, determining a rotation period of the substrate 4 based on the distance data group and the rotation time;

[0062] S220: Determine the rotation speed based on the rotation period.

[0063] In one embodiment, in step S210, the distance data set includes distance data measured by lasers at various points on the linear laser 2 at a certain time. The rotation period of the substrate 4 can be obtained through relevant calculations, which may include:

[0064] S2111, performing a first operation based on all distance data in the distance data group to determine a first reference value;

[0065] S2112. Determine the rotation period of the substrate 4 based on a first functional relationship in which the first reference value changes with the rotation time.

[0066] Combine Figures 4 to 6As shown, taking the tray assembly 3 with the pressure ring 33 as an example, A, B, C, D, E, F, and G in the figure correspond to the angles of the incident light during the rotation of the substrate 4. With the substrate 4 as a reference, it is equivalent to the incident light rotating counterclockwise in the figure. Figure 4 As shown, the incident light impinges on the edge of the substrate 4 and the pressure ring 33 .

[0067] When the incident light irradiates the arc segment 41, the distance data set obtained is [x1, x2, x3...x n ], where n is an integer greater than 2, equivalent to the number of laser points, x1 is the distance obtained by the laser point corresponding to the pressure ring 33 (also the laser point farthest from the rotation center of the substrate 4), and x n is the distance obtained by the point laser corresponding to the substrate 4 (also the point laser closest to the rotation center of the substrate 4).

[0068] For example, the distance data groups corresponding to each point on the arc segment 41 (including points A, B, F, and G) detected in the process of the incident light passing from F through G, A to B are all [2, 2, 2, 1, 1, 1, 1]. In the process of the incident light passing from B through C, D, E to F, the distance data group corresponding to point C is [2, 2, 2, 2, 1, 1, 1], the distance data group corresponding to point D is [2, 2, 2, 2, 2, 1, 1], and the distance data group corresponding to point E is [2, 2, 2, 2, 1, 1]. 2,1,1,1], a first operation is performed on all the distance data in these distance data groups, the first operation including average operation or sum operation, etc. In this embodiment, the average values ​​(i.e., the first reference value) corresponding to points A, B, F, and G are all 10 / 7, the average value (i.e., the first reference value) corresponding to point C is 11 / 7, the average value (i.e., the first reference value) corresponding to point D is 12 / 7, and the average value (i.e., the first reference value) corresponding to point E is 11 / 7. The rotation time t is used as the horizontal axis and the average value is used as the horizontal axis. (i.e. the first reference value) is the vertical coordinate, forming Figure 8 shown The function graph (ie, the functional relationship between the first reference value and the rotation time) can be used to determine the rotation period of the substrate 4 through the functional relationship between the rotation time and the first reference value, and then the rotation speed can be calculated through the rotation period.

[0069] Before step S210, optionally, the point laser of the linear laser 2 is divided into a plurality of point laser groups, a point laser data group is formed by point laser ranging in each of the point laser groups, a second operation is performed based on all the point laser data in the point laser data group to determine a second reference value; the second reference values ​​corresponding to the plurality of point laser data groups are used as distance data to form the distance data group.

[0070] For example, the linear laser 2 has 2000 point lasers. Since the tray assembly 3 will have a slight shake when rotating, and this slight shake will have a certain degree of influence on the light spot of the point laser. That is, the shaking of the tray can easily cause the change of the measurement data of the linear laser 2, which causes the undesirable sensitivity of the measurement data. To avoid the above problem, in one embodiment, the aforementioned 2000 point lasers are divided into 10 groups of point laser groups, each group of point laser groups includes 200 point lasers, and the data obtained by the distance measurement of each point laser in the point laser group forms a point laser data group. The point laser data in each point laser data group is subjected to a second operation (the second operation includes an average operation or a summation operation, etc.) to serve as a second reference value; the second reference values ​​of multiple point laser data groups are used as distance data to form a distance data group. After that, the rotation period of the substrate 4 can be determined based on the distance data group and the rotation time, and then the rotation speed of the substrate 4 can be determined.

[0071] In this way, by grouping multiple point lasers into multiple point laser groups, multiple point laser ranging in each point laser group forms a point laser data group, and then a second reference value is obtained through a second operation. Multiple second reference values ​​serve as distance data to form a distance data group, and then the rotation period is determined by the distance data group and the rotation time, thereby reducing the sensitivity of the data. Even if there is a slight shake when the substrate 4 rotates, after the above calculation, it will not cause a large change in the data, thereby improving the stability of the data.

[0072] Preferably, in step S2112, determining the rotation period of the substrate based on a first functional relationship between the first reference value and the rotation time specifically includes:

[0073] S21121. Determine, based on the first functional relationship, a first moment and a second moment corresponding to when the first reference value reaches a first preset value and a second preset value;

[0074] S21122. When the first preset value and the second preset value reappear, obtain a third time at which the first preset value reappears and a fourth time at which the second preset value reappears;

[0075] S21123. Determine a fifth moment based on the first moment and the second moment, determine a sixth moment based on the third moment and the fourth moment, and determine the rotation period based on the difference between the sixth moment and the fifth moment.

[0076] For example, in combination Figures 4 to 6 As shown, as the substrate 4 and the tray assembly 3 rotate, the irradiation area sweeps across the corresponding area, wherein the first reference value and the rotation time form a first functional relationship, which can be referred to Figure 8As shown, the first preset value and the second preset value can usually be set as the first reference values ​​of the irradiation area corresponding to two points on the variable diameter section 42 (it should be noted that these two points need to be preset on the variable diameter section 42 and away from the junction of the variable diameter section 42 and the arc section 41). In this embodiment, it is assumed that the irradiation area passes through point C first and then point E. Therefore, the first preset value and the second preset value are the first reference values ​​corresponding to point C and point E, respectively (using average value calculation), and are both 11 / 7 (in the illustrated embodiment, the substrate 4 is a symmetrical figure, so the first preset value and the second preset value are equal; in other embodiments, the first preset value and the second preset value may also be unequal). The first moment and the second moment when the first reference value reaches 11 / 7 are determined; as the substrate 4 and the tray assembly 3 continue to rotate, when the first preset value and the second preset value reappear, the third moment when the first preset value reappears and the fourth moment when the second preset value reappear are obtained; in order to determine the rotation period of the substrate 4, it is necessary to calculate Figure 8 The corresponding rotation time of point D in the middle, the fifth moment when passing point D for the first time can be calculated through the first moment and the second moment (in this embodiment, the variable diameter section 42 is a straight line segment, and the fifth moment is the average of the first moment and the second moment), and the sixth moment when passing point D for the second time can be calculated through the third moment and the fourth moment (the sixth moment is the average of the third moment and the fourth moment), and the difference between the sixth moment and the fifth moment is the rotation period.

[0077] It should be noted that the above embodiment is based on the premise that the irradiation area passes through point C first and then point E. In actual application, there is also the possibility that the irradiation area passes through point E first and then point C (that is, the irradiation area is initially located on the minor arc formed by points C and E). In order to avoid the two possibilities affecting the accuracy of the rotation period calculation, the time difference between the first moment and the second moment or the change of the first reference value between the first moment and the second moment can be used to determine whether the first reference value obtained for the first time reaches 11 / 7, thereby obtaining the correct first moment and second moment, and then the subsequent third moment and fourth moment can be obtained.

[0078] Preferably, when the difference between the actual reference value detected and calculated by the linear laser 2 and the preset reference value is smaller than a preset threshold ε, it is determined that the actual reference value reaches or reproduces the preset reference value.

[0079] For example, in step S21122, when the difference between the actual first reference value and the first preset value is less than a preset threshold ε, the first preset value is determined to have reappeared; and when the difference between the actual first reference value and the second preset value is less than the preset threshold ε, the second preset value is determined to have reappeared. In this way, by varying the value of the preset threshold ε, the accuracy of the speed calculation can be ensured.

[0080] Furthermore, in this embodiment, since the variable diameter section 42 is a straight line, the substrate 4 is an axisymmetric shape. Therefore, the rotational period, and thus the rotational speed of the substrate 4, can be determined based on the recurrence of point D (i.e., the maximum value of the first reference value). Accordingly, the variable diameter section 42 may also be V-shaped or have other shapes. It is understood that, generally speaking, the outer shape of the substrate 4 is not designed to be overly complex, and an overly complex variable diameter section 42 may interfere with the determination of the rotational period. This embodiment is only applicable to variable diameter sections 42 of certain shapes. The rotational speed of the substrate 4 can be determined by combining the geometric characteristics of the variable diameter section 42 (for example, the geometric characteristic of the variable diameter section 42 being an axisymmetric shape, as utilized in the above steps).

[0081] In another embodiment, in the above step S2112, determining the rotation period of the substrate 4 based on a first functional relationship between the first reference value and the rotation time specifically includes:

[0082] S21124. Determine, based on the first functional relationship, a seventh time corresponding to when the first reference value reaches a third preset value;

[0083] S21125. Determine the rotation period based on the number of recurrences and the recurrence time of the third preset value.

[0084] Combine Figure 8 As shown in FIG. 1 , it can be seen from the first functional relationship graph that the radius of the variable diameter segment 42 is not equal to the radius of the arc segment 41. The radius of different points on the variable diameter segment 42 varies within a certain range, and there is no arc portion on the variable diameter segment 42 with the rotation center of the substrate 4 as the center (i.e., non-circularity). Therefore, a point on the variable diameter segment 42 with a unique radius or a finite number of repeated radiuses can be determined. For example, Figure 8 Point C in the figure has a radius that is repeated twice within the range of the variable diameter section 42, namely point C and point E. Therefore, the third preset value can be set as the first reference value when point C corresponds to the irradiation area, and the seventh moment when the first reference value reaches the third preset value is determined; for the third preset value (i.e. point C) in this embodiment, after the first reference value reaches the third preset value for the first time, when the third preset value is repeated 2 times (when the number of repetitions is 1, it is equivalent to the irradiation area corresponding to point E), it can be considered that the substrate 4 has rotated a full circle, and the difference between the rotation time corresponding to the last repetition of the third preset value (i.e. repetition time) and the seventh moment can be used to determine the rotation period (when the third preset value is repeated 4 times, it can be considered that the substrate 4 has rotated two full circles, i.e., the number of circles is equal to the number of repetitions divided by 2. At this time, when calculating the rotation period, the difference between the repetition time of the last repetition and the seventh moment is divided by the number of circles to obtain the rotation period).

[0085] In the embodiment described above, step "S210, determining the rotation period of the substrate 4 based on the distance data set and the rotation time" can be implemented as follows: "S2111, performing a first operation based on all distance data in the distance data set to determine a first reference value; S2112, determining the rotation period of the substrate 4 based on a first functional relationship in which the first reference value varies with the rotation time."

[0086] This embodiment calculates the distance data set obtained by the linear laser 2 at a certain position (corresponding to the irradiation area) of the substrate 4 and the tray assembly 3 at a certain moment into a certain data (i.e., a first reference value), and then uses the first reference value to represent this position.

[0087] In another embodiment of the present invention, the distance data group can also be used directly to characterize this position. For example, the distance data group corresponding to point E is [2,2,2,2,1,1,1], and this data group is used to characterize the position of point E. As the tray assembly 3 rotates, the distance data group is also undergoing the same type of change as the aforementioned first reference value. For example, when the distance data group corresponding to point E [2,2,2,2,1,1,1] undergoes 2 repetitions, the tray rotates one circle. The method for confirming the recurrence of the distance data group is similar to the method for confirming the recurrence of the aforementioned first reference value. If the change in each distance data in the two distance data groups is less than a preset threshold (which may be equal to ε or may not be equal to ε), it is determined that the distance data group is repeated.

[0088] It should be understood that the first rotation cycle confirmation method represented by the aforementioned steps S21121, S21122 and S21123 and the second rotation cycle confirmation method represented by steps S21124 and S21125 are both applicable to embodiments in which distance data groups are used to characterize positions, and therefore will not be described in detail.

[0089] The substrate speed measurement method of the present invention emits incident light to the substrate 4 below through a linear laser 2 to form an irradiation area, and receives reflected light. The point laser included in the linear laser 2 can measure the distance between the edge of the substrate 4 and the tray assembly 3. As the substrate 4 and the tray assembly 3 rotate, the detection data obtained by the linear laser 2 can reflect the rotation state of the substrate 4 (including but not limited to parameters such as the rotation cycle and the rotation time), so that the rotation speed of the substrate 4 can be determined; the linear laser 2 has multiple point lasers, which can measure the distance at different radial positions of the edge of the substrate 4. As long as the radius change of the variable diameter section 42 of the substrate 4 has a certain degree of radius change compared to the circular arc section 41, when the variable diameter section 42 rotates to the position corresponding to the irradiation area, it will cause the distance measurement related data of multiple point lasers to change (because there is a gap between the tray assembly 3 and the substrate 4, the distance from the linear laser 2 to the bottom of the gap is significantly different from the distance between the linear laser 2 and the upper surface of the substrate 4). The same; or, the distance from the linear laser 2 to the tray assembly 3 is significantly different from the distance from the linear laser 2 to the substrate 4, so as the substrate 4 rotates, the data measured by the linear laser 2 will change; or, in some embodiments, the substrate 4 is located in the groove of the carrier 32, and there is a gap between the substrate 4 and the carrier 32. Similarly, as the substrate 4 rotates, the data measured by the linear laser 2 will also change). The rotation of the substrate 4 can be identified more accurately. For substrates 4 of different shapes, as long as they have a variable diameter section 42, the function of detecting the rotation speed of the substrate 4 can be achieved. Therefore, the present invention has good compatibility. Compared with the solution of adding a structure to the air floating tray to assist in detecting the rotation speed of the substrate, the substrate speed measurement method of the present invention does not need to add other structures to the rotating structure such as the tray assembly 3, and will not have a significant impact on the thermal field and flow field in the reaction chamber 1. While achieving the detection of the rotation speed of the substrate 4, the uniformity of the epitaxial film is guaranteed.

[0090] In the description of the present invention, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or component referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0091] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0092] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0093] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. A deposition device, characterized in that: including a reaction chamber and a linear laser; The reaction chamber includes a reaction chamber, a tray assembly is rotatably disposed in the reaction chamber to drive the substrate to rotate, and an edge of the substrate includes an arc segment and a diameter-varying segment having a radius unequal to that of the arc segment; The linear laser is arranged on the upper side of the substrate, and emits incident light toward the edge of the substrate and the tray assembly to form an irradiation area, and receives reflected light. The maximum distance from the irradiation area to the rotation center of the substrate is greater than the minimum radius of the variable diameter section, and the minimum distance from the irradiation area to the rotation center of the substrate is less than the radius of the arc section. The linear laser is composed of multiple point lasers arranged in a straight line to measure the distance between the substrate and the tray assembly in the irradiation area. The irradiation range of the incident light covers the edge of the substrate and the portion of the tray assembly surrounding the edge of the substrate. The distance data measured by all the point lasers of the linear laser form a distance data group, and each distance data group includes the distance data measured by each point laser of the linear laser at the same time. All the distance data in the distance data group are subjected to a first operation to obtain a first reference value. A first functional relationship in which the first reference value changes with the rotation time is used to determine the rotation period of the substrate to determine the rotation speed of the substrate.

2. The deposition device according to claim 1, characterized in that The reaction chamber also includes an upper induction heat generating component located on the upper side of the reaction chamber, a lower induction heat generating component located on the lower side of the reaction chamber, a graphite felt and a cooling quartz wall. The graphite felt is arranged on the outside of the upper induction heat generating component, and the cooling quartz wall is arranged on the outside of the graphite felt.

3. The deposition device according to claim 2, characterized in that The linear laser is arranged outside the reaction chamber. The reaction chamber is provided with an avoidance hole corresponding to the optical path of the linear laser. The avoidance hole includes a first through hole, a second through hole and a third through hole. The first through hole is located on the top wall of the upper induction heat generating component, the second through hole is located on the bottom wall of the upper induction heat generating component, and the third through hole is provided on the graphite felt. A first window portion is provided on the cooling quartz wall. The linear laser is used to emit incident light to the edge of the substrate and the tray assembly through the first window portion, the third through hole, the first through hole, and the second through hole, and receive reflected light through the second through hole, the first through hole, the third through hole, and the first window portion.

4. The deposition device according to claim 2, characterized in that The tray assembly includes an air-floating tray, a carrier plate and a pressure ring. The air-floating tray can be rotatably arranged on the top wall of the lower induction heat generating component. The carrier plate is located on the air-floating tray. The pressure ring is installed on the carrier plate. The carrier plate is used to support the substrate. The pressure ring is arranged around the substrate.

5. The deposition apparatus according to claim 2, wherein: The linear laser is arranged outside the reaction chamber. The reaction chamber is provided with an avoidance hole corresponding to the optical path of the linear laser. The linear laser includes an emitting end and a receiving end. The avoidance holes include a fourth through hole, a fifth through hole, a sixth through hole, a seventh through hole, an eighth through hole, and a ninth through hole. The fourth through hole and the fifth through hole are located on the top wall of the upper induction heat generating component, the sixth through hole and the seventh through hole are located on the bottom wall of the upper induction heat generating component, and the eighth through hole and the ninth through hole are located on the graphite felt. A second window portion and a third window portion are provided on the cooling quartz wall. The emitting end is used to emit incident light to the edge of the substrate and the tray assembly through the second window portion, the eighth through hole, the fourth through hole, and the sixth through hole. The receiving end is used to receive reflected light through the seventh through hole, the fifth through hole, the ninth through hole, and the third window portion.

6. The deposition apparatus according to claim 2, wherein: It also includes an anti-drop protection plate, a first flange and a second flange, the first flange and the second flange are respectively connected to the two ends of the cooling quartz wall, the two ends of the anti-drop protection plate are respectively connected to the first flange and the second flange, and the linear laser is installed on the anti-drop protection plate.

7. A method for measuring substrate velocity, wherein the edge of the substrate comprises an arc segment and a variable diameter segment having a radius unequal to that of the arc segment, characterized in that: The deposition device according to any one of claims 1 to 6 comprises: Based on the incident light emitted by a line laser to the edge of the substrate and the tray assembly to form an irradiation area, and receiving the reflected light, the detection data of the irradiation area is obtained; the detection data includes a distance data group and a rotation time, and the distance data group is formed by laser ranging at multiple points of the line laser; performing a first operation based on all distance data in the distance data set to determine a first reference value; determining a rotation period of the substrate based on a first functional relationship in which the first reference value changes with the rotation time; Based on the rotation period, the rotational speed is determined.

8. The substrate velocity measurement method according to claim 7, wherein: The performing of the first operation based on all the distance data in the distance data group to determine the first reference value includes: dividing the point lasers of the linear laser into a plurality of point laser groups, forming a point laser data group by measuring the distance of the point lasers in each of the point laser groups, and performing a second operation based on all the point laser data in the point laser data group to determine a second reference value; The second reference values ​​corresponding to the plurality of point laser data sets are used as distance data to form the distance data set.

9. The substrate velocity measurement method according to claim 7, wherein: The determining of the rotation period of the substrate based on the first functional relationship between the first reference value and the rotation time specifically includes: Based on the first functional relationship, determining a first moment and a second moment corresponding to when the first reference value reaches a first preset value and a second preset value; When the first preset value and the second preset value recur, obtaining a third moment when the first preset value recurs and a fourth moment when the second preset value recurs; A fifth moment between the first moment and the second moment is determined based on the first moment and the second moment, a sixth moment between the third moment and the fourth moment is determined based on the third moment and the fourth moment, and the rotation period is determined based on the difference between the sixth moment and the fifth moment.

10. The substrate velocity measurement method according to claim 7, wherein: The determining of the rotation period of the substrate based on the first functional relationship between the first reference value and the rotation time specifically includes: determining, based on the first functional relationship, a seventh moment corresponding to when the first reference value reaches a third preset value; The rotation period is determined based on the number of recurrences and the recurrence time of the third preset value.

Images