Cerium-doped bismuth germanate scintillating ceramic material, and preparation method and application thereof

Abstract

The present application relates to a kind of cerium-doped bismuth germanate scintillating ceramic material and its preparation method and application.The chemical formula of the cerium-doped bismuth germanate scintillating ceramic material is Bi 4‑x Ge3O 12 : xCe, wherein 0 < x≤0.1.

Description

TECHNICAL FIELD

[0001] The present application relates to a cerium-doped bismuth germanate scintillating ceramic material and a preparation method and application thereof, and belongs to the field of scintillators for radiation detection. BACKGROUND

[0002] Scintillators are a kind of functional materials that can convert the energy absorbed by high-energy particles or radiation into ultraviolet-visible or near-infrared photons, and then convert them into electrical signals through photomultiplier tubes, silicon photomultiplier tubes (SiPM) and other light detectors, so as to realize accurate detection and discrimination of the type, quantity, energy, direction and position of incident high-energy particles or radiation. Scintillation detectors based on scintillators have been widely used in high-energy physics, medical imaging, security inspection, resource exploration, environmental monitoring and industrial detection.

[0003] Doping is a reliable means to improve and improve the shortcomings of existing scintillating materials. With the differentiated needs of radiation detection, while researching and developing new scintillators with better performance, people have been trying to improve the scintillation performance of existing materials with scale manufacturing capabilities through doping, such as co-doping of calcium and cerium to shorten the decay time of lutetium silicate crystal and enhance its light output (M.A. Spurrier et al., Effects of Ca 2+ Co-Doping on the Scintillation Properties of LSO:Ce, IEEE Trans. Nucl. Sci., 55 (2008): 1178-1182), yttrium doping suppresses the slow scintillation component 4-5 times faster than the fast scintillation component in barium fluoride scintillation crystal (J. Chen et al., "Slow Scintillation Suppression in Yttrium Doped BaF2 Crystals," IEEE Trans. Nucl. Sci. 65 (2018): 2147-2151), doping fluorine improves the light output of lead tungstate scintillation crystal, and doping yttrium improves its light transmission and light response uniformity (Wang Shaohua, Macroscopic Defects and Doping Effects of Lead Tungstate Crystal, Ph.D. thesis of Shanghai Institute of Silicate, Chinese Academy of Sciences, 1999).

[0004] Bismuth germanate (Bi4Ge3O 12 , BGO) crystal is an inorganic scintillator with excellent comprehensive performance, with high density (7.13 g / cm 3 , effective atomic number (Z eff, 74), high radiation stopping power, high detection efficiency, moderate energy resolution, large intrinsic peak / Compton, good uniformity, no luminescence self-absorption, no afterglow, stable physical and chemical properties, and good machinability, and has wide and important applications in high-energy physics, astrophysics, nuclear physics, nuclear medical imaging, geological exploration, oil well logging, and industrial detection. Since the 1980s, the crystal has been mass-produced, and with the in-depth research and development, new sizes and performance breakthroughs have been made, and so far it is still one of the most important and largest inorganic scintillators. The Circular Electron-Positron Collider (CEPC) and the Future Circular Collider (FCC) are intensity frontier large scientific devices, with significantly higher beam intensity than existing Large Hadron Collider (LHC) devices, which puts higher requirements on the hardness and time response characteristics of the scintillation crystal.

[0005] The silicon photomultiplier (SiPM) is a new type of high-sensitivity semiconductor photodetector, which is composed of a plurality of pixels working in Geiger mode and connected in parallel, and each pixel is composed of an avalanche photodiode and a quenching resistor connected in series. SiPM has high quantum efficiency, high gain, good signal-to-noise ratio, fast time response, low operating voltage, magnetic field insensitivity, and compact structure, and has become the preferred scintillation light detector for CEPC and FCC devices, and is also the preferred choice for light reading of various scintillation detectors. Because a large number of scintillation photons are generated by GeV-TeV high-energy particles, when all the pixels simultaneously detect photons, the output signal of the SiPM will be saturated, i.e. no more pixels can be used to detect other incident photons, which will directly affect the dynamic range and accuracy of the electric energy device. Although the light output of the crystal can be reduced by using attenuating sheets, its stability and reliability in a strong radiation environment cannot be guaranteed, so it is urgent to reduce the light output of the BGO crystal to better meet the urgent application needs of CEPC and FCC large scientific devices.

[0006] In addition, after being irradiated by a certain dose of high-energy particles, rays or ultraviolet radiation, the BGO crystal will have its scintillation performance attenuated due to coloration, which will further affect the crystal light output and light response uniformity, which is called "radiation damage". How to reduce the radiation damage effect is one of the important directions of BGO crystal research and development. In addition, the BGO crystal has a long decay time of about 0.3 μs, which limits its application in high-count-rate radiation detection such as high-energy physics and resource exploration, and how to shorten its decay time has also attracted continuous attention SUMMARY

[0007] Therefore, the purpose of the present application is to provide a cerium-doped bismuth germanate scintillation ceramic material, a preparation method and application thereof, which can reduce the light output of the BGO scintillator, improve its radiation resistance, and shorten its decay time.

[0008] In a first aspect, the present application provides a cerium-doped bismuth germanate scintillation ceramic material, which has a chemical formula of Bi4Ge3O 12 :xCe, wherein 0 3+ and Ce 4+ are doped in the form of Bi sites. In the present application, Ce 4+ accounts for 70-80% of the total amount of Ce element, and Ce 3+ accounts for 20-30%, and the sum of the two accounts for 100%. Preferably, when x=0.03, Ce 4+ accounts for 76%, and Ce 3+ accounts for 24%.

[0009] In the present application, after cerium is doped in BGO, trivalent Ce 3+ and tetravalent Ce 4+ exist in the BGO scintillator. Since the ionic radius of Bi and Bi is much larger than that of Ce and Ce , and the ionic radius of Bi is slightly larger than that of Ce 3+ and Ce 4+ , according to the general principle that the doping ion must satisfy the similar ionic radius of the substituted ion in the matrix lattice, the Ce ion will occupy the lattice position of Bi 3+ ion in the BGO scintillator after doping. Moreover, the irradiation valence change of Ce ion can inhibit the formation of color centers caused by radiation in Bi4Ge3O 12 , thereby improving the anti-irradiation capability of Bi4Ge3O 12 . In addition, the present application reduces the light output of BGO through Ce doping, and has important research significance and practical value in inhibiting irradiation damage and shortening the decay time.

[0010] Preferably, x=0.01-0.05, preferably 0.02-0.04, and more preferably 0.03.

[0011] Preferably, the cerium-doped bismuth germanate scintillation ceramic material is in the form of ceramic powder, and the particle size is preferably 50 nm-50 μm.

[0012] Preferably, the cerium-doped bismuth germanate scintillation ceramic material is in the form of ceramic bulk.

[0013] In a second aspect, the present application provides a preparation method of a cerium-doped bismuth germanate scintillation ceramic material, which has a chemical formula of Bi 4-x Ge3O 12 :xCe, wherein 0

[0014] The cerium-doped bismuth germanate scintillation ceramic material is in the form of a ceramic powder, and the preparation method comprises the following steps:

[0015] (1) according to the chemical formula Bi4Ge3O 12 :xCe of the cerium-doped bismuth germanate scintillation ceramic material, weighing Bi sources, Ge sources and Ce sources and mixing to obtain a mixed powder;

[0016] (2) sintering the mixed powder at 800-900 ℃ for 1-10 hours to obtain the cerium-doped bismuth germanate scintillation ceramic material.

[0017] Preferably, the Bi source is Bi2O3; the Ge source is GeO2; and the Ce source is at least one of CeO2, Ce2O3, CeF3 and Ce(NO3)3.

[0018] Preferably, the sintering atmosphere is an air atmosphere, an oxygen atmosphere or a reducing atmosphere; and the reducing atmosphere is an inert gas and hydrogen mixed gas, and the hydrogen content is not more than 10 vol%.

[0019] In a third aspect, the present application provides a preparation method of a cerium-doped bismuth germanate scintillation ceramic material, the chemical formula of the cerium-doped bismuth germanate scintillation ceramic material being Bi 4-x Ge3O 12 :xCe, wherein 0

[0020] The cerium-doped bismuth germanate scintillation ceramic material is in the form of a ceramic bulk, and the preparation method comprises the following steps:

[0021] (1) according to the chemical formula Bi4Ge3O 12 :xCe of the cerium-doped bismuth germanate scintillation ceramic material, weighing Bi sources, Ge sources and Ce sources and mixing to obtain a mixed powder;

[0022] (2) pressing the mixed powder to obtain a ceramic green body;

[0023] (3) hot-pressing sintering or hot-isostatic-pressing sintering the ceramic green body to obtain the cerium-doped bismuth germanate scintillation ceramic material.

[0024] Preferably, the Bi source is Bi2O3; the Ge source is GeO2; and the Ce source is at least one of CeO2, Ce2O3, CeF3 and Ce(NO3)3.

[0025] Preferably, the hot-pressing sintering parameters comprise a pressure of 0.03-5 GPa, a sintering temperature of 500-900 ℃ and sintering for 1-20 hours.

[0026] The hot-isostatic-pressing sintering parameters comprise a pressure of 0.03-5 GPa, a sintering temperature of 500-900 ℃ and sintering for 1-20 hours.

[0027] In a fourth aspect, the present application provides an application of the cerium-doped bismuth germanate scintillation ceramic material in the field of radiation detection, including high-energy physics, nuclear physics, space physics, oil well logging, geological exploration, safety inspection and industrial detection.

[0028] The present application has the following beneficial effects:

[0029] The present application can reduce the light output of the BGO scintillation ceramic material, improve its anti-radiation performance, and shorten its decay time, which can significantly improve the scintillation characteristics of BGO. The present application also provides an application of the cerium-doped bismuth germanate (BGO:Ce) scintillation ceramic material in the field of radiation detection, including but not limited to high-energy physics, nuclear physics, space physics, oil well logging, geological exploration, safety inspection, industrial detection, etc. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 The X-ray diffraction pattern (XRD) of the cerium-doped bismuth germanate ceramic powder in Examples 1-5 is shown in the figure, and the standard X-ray diffraction spectrum of the bismuth germanate crystal phase is inserted at the bottom.

[0031] Figure 2 In the figure, a is the emission spectrum of Example 1 before and after irradiation and the corresponding integral area, and b is the X-ray excited emission spectrum of Example 1 before and after irradiation and the corresponding integral area.

[0032] Figure 3 In the figure, a is the emission spectrum of Example 4 before and after irradiation and the corresponding integral area, and b is the X-ray excited emission spectrum of Example 4 before and after irradiation and the corresponding integral area.

[0033] Figure 4 In the figure, a is the X-ray photoelectron spectrum of Ce 3d in Example 4 before irradiation, and b is the X-ray photoelectron spectrum of Ce 3d in Example 4 after irradiation.

[0034] Figure 5 In the figure, a is the emission spectrum of the cerium-doped bismuth germanate ceramic powder in Examples 1-6 with different cerium concentrations, and b is the corresponding comparison of the integral area of the spectrum.

[0035] Figure 6 The excitation spectrum of the cerium-doped bismuth germanate ceramic powder in Examples 1-5 with different cerium concentrations is shown in the figure.

[0036] Figure 7 The X-ray excited emission spectrum of the cerium-doped bismuth germanate ceramic powder in Examples 1-5 with different cerium concentrations is shown in the figure.

[0037] Figure 8 The fluorescence decay curve of Example 1 (monitoring wavelength is 467 nm) is shown in the figure.

[0038] Figure 9 The fluorescence decay curve (monitoring wavelength is 467 nm) of Example 4. DETAILED DESCRIPTION

[0039] The present application is further illustrated by the following examples, which should not be construed as limiting the present application.

[0040] The following exemplarily illustrates the preparation method of the cerium-doped bismuth germanate ceramic.

[0041] Bi source, Ge source and Ce source are weighed according to the determined weight of the doping amount and mixed to obtain a mixed powder. Preferably, the Bi source, Ge source and Ce source are Bi2O3, GeO2 and CeO2 respectively.

[0042] The mixed powder is sintered at 800-900℃ in air / reducing atmosphere for 1-10 hours to obtain a cerium-doped bismuth germanate powder scintillator.

[0043] The following exemplarily illustrates the preparation method of the cerium-doped bismuth germanate ceramic scintillator.

[0044] Bi2O3 and GeO2 are used as raw materials, and one or more than two mixtures of CeO2, Ce2O3, CeF3, Ce(NO3)3 and other oxides or chemicals are used as dopants. The mixed powder is obtained by weighing according to the determined weight of the doping amount and mixing.

[0045] The mixed powder is pressed into a shape and sintered at 500-900℃ in a hot isostatic pressing or hot pressing furnace for 1-20 hours to obtain a cerium-doped bismuth germanate ceramic scintillator.

[0046] In the present application, the application of the cerium-doped bismuth germanate scintillator includes but is not limited to the fields of radiation detection such as high-energy physics, nuclear physics, space physics, oil well logging, geological exploration, safety inspection, industrial detection, etc.

[0047] The following further examples are used to illustrate the present application in detail. It should also be understood that the following examples are only used to further illustrate the present application and should not be construed as limiting the scope of protection of the present application. Some non-essential improvements and adjustments made by those skilled in the art based on the above content of the present application are within the scope of protection of the present application. The following examples specifically illustrate the process parameters, which are only one example in the appropriate range, i.e. those skilled in the art can make appropriate selection within the range according to the description herein, and are not limited to the specific values of the following examples.

[0048] Example 1

[0049] Commercially available Bi2O3 and GeO2 powders are used as raw materials and weighed in a molar ratio of 2:3 (x = 0). Grind and mix evenly in an agate mortar. Place the mixed powder in a corundum crucible, cover it, and place it in a high-temperature furnace. Sinter it at 900°C in air or a reducing atmosphere (95% argon + 5% hydrogen) for 6 hours. After cooling and appropriate grinding, Bi4Ge3O 12 Ceramic powder.

[0050] Example 2

[0051] Use commercially available Bi2O3, GeO2, and CeO2 powders as raw materials and weigh them in a molar ratio of 1.9975:3:0.005 (0.005). Grind and mix them evenly in an agate mortar. Place the mixed powder in a corundum crucible, cover it, and place it in a high-temperature furnace. Sinter it at 900°C in air or a reducing atmosphere (95% argon + 5% hydrogen) for 6 hours. After cooling and proper grinding, Bi 3.995 Ge3O 12 :0.005Ce ceramic powder.

[0052] Example 3

[0053] Commercially available Bi2O3, GeO2, and CeO2 powders are used as raw materials and weighed in a molar ratio of 1.995:3:0.01 (x=0.01). Grind and mix evenly in an agate mortar. Place the mixed powder in a corundum crucible, cover it, and place it in a high-temperature furnace. Sinter it at 900°C in air or a reducing atmosphere (95% argon + 5% hydrogen) for 6 hours. After cooling and proper grinding, Bi 3.99 Ge3O 12 :0.01Ce ceramic powder.

[0054] Example 4

[0055] Commercially available Bi2O3, GeO2, and CeO2 powders are used as raw materials and weighed in a molar ratio of 1.985:3:0.03 (x=0.03). Grind and mix evenly in an agate mortar. Place the mixed powder in a corundum crucible, cover it, and place it in a high-temperature furnace. Sinter it at 900°C in air or a reducing atmosphere (95% argon + 5% hydrogen) for 6 hours. After cooling and proper grinding, Bi 3.97 Ge3O 12 :0.03Ce ceramic powder.

[0056] Example 5

[0057] Commercially available Bi2O3, GeO2, and CeO2 powders are used as raw materials and weighed in a molar ratio of 1.975:3:0.05 (x=0.05). Grind and mix evenly in an agate mortar. Place the mixed powder in a corundum crucible, cover it, and place it in a high-temperature furnace. Sinter it at 900°C in air or a reducing atmosphere (95% argon + 5% hydrogen) for 6 hours. After cooling and proper grinding, Bi 3.95 Ge3O 12 :0.05Ce ceramic powder.

[0058] Example 6

[0059] Use commercially available Bi2O3, GeO2, and CeO2 powders as raw materials and weigh them in a molar ratio of 1.95:3:0.1 (x=0.1). Grind and mix them evenly in an agate mortar. Place the mixed powders in a corundum crucible, cover it, and place it in a high-temperature furnace. Sinter it at 900°C in air or a reducing atmosphere (95% argon + 5% hydrogen) for 6 hours. After cooling and proper grinding, Bi 3.9 Ge3O 12 :0.1Ce ceramic powder.

[0060] Example 7

[0061] Commercially available Bi2O3, GeO2, and CeO2 powders were weighed in a molar ratio of 1.985:3:0.03 (x=0.03). The mixture was ground and mixed evenly in an agate mortar to obtain a mixed powder. The mixed powder was pressed into shape and sintered in a hot isostatic pressing furnace at 900°C for 6 hours to obtain Bi2O3. 3.97 Ge3O 12 :0.03Ce ceramic block.

[0062] Figure 1 The XRD diffraction phase analysis results of polycrystalline powders are shown in Figure 2. When the doping concentration x≤0.03, the XRD diffraction peaks of the powders are similar to those of Bi4Ge3O 12 The standard diffraction peaks of the main crystalline phase correspond well, and no other impurity phases are observed. In addition, when the doping concentration is higher than 0.03, the present invention observes the presence of a small amount of Bi2GeO5 impurity (2θ = 28.7°). Considering that the absorption band of Bi2GeO5 is located at ~350nm, the trace impurity does not affect the subsequent analysis of the present invention.

[0063] The present invention first studies the optical properties of bismuth germanium oxide. Under 272nm excitation, Bi4Ge3O 12 It exhibits broadband emission with a peak at 467nm. The emission peak originates from Bi 3+ of 3 P1→ 1 S0 transition.Figure 2 The change of emission spectrum of Bi4Ge3O12 (Example 1) before and after UV irradiation for 12 hours is shown in Fig. 2a. The integrated area of emission spectrum of Bi4Ge3O12 curve decreases to 83% of the original after 12 hours of UV irradiation. As shown in Fig. 2b, the integrated area of XEL curve decreases to 84% of the original after UV irradiation. The irradiation causes the decrease of luminescence intensity of Bi4Ge3O12 (Example 1), which is not conducive to the stability during use. Figure 2 The change of emission spectrum of Bi4Ge3O12 (Example 1) before and after UV irradiation for 12 hours is shown in Fig. 2a. The integrated area of emission spectrum of Bi4Ge3O12 curve decreases to 83% of the original after 12 hours of UV irradiation. As shown in Fig. 2b, the integrated area of XEL curve decreases to 84% of the original after UV irradiation. The irradiation causes the decrease of luminescence intensity of Bi4Ge3O12 (Example 1), which is not conducive to the stability during use.

[0064] Figure 3 The photoluminescence emission spectrum and X-ray excited emission spectrum of cerium-doped Bi4Ge3O12 ceramic body prepared in Example 4 before and after irradiation are shown in Fig. 4. After UV irradiation, the integrated area of emission spectrum of cerium-doped Bi4Ge3O12 ceramic powder becomes 106% of that before irradiation, and the integrated area of X-ray excited emission spectrum becomes 97% of that before irradiation. In comparison, the doping of cerium can improve the anti-irradiation damage ability of Bi4Ge3O12.

[0065] In order to further understand the electron capture and de-capture behaviors involved in the irradiation process, high-resolution XPS measurements were performed on Ce on the unirradiated and irradiated cerium-doped Bi4Ge3O12 ceramic body samples prepared in Example 4. It can be clearly seen that Figure 4 The valence state distribution of Ce in Fig. 2a. Ce 3+ and Ce 4+ valence states coexist, and the main Ce 4+ is the main one, in which Ce 4+ accounts for 76%, and Ce 3+ accounts for 24% (x = 0.03). Irradiation can cause changes in the valence state distribution, and XPS after irradiation can see that Ce 3+ increases Figure 4 (b). Ce ions can effectively inhibit the formation of color centers caused by X-ray radiation in Bi4Ge3O 12 , thereby improving the anti-irradiation ability of Bi4Ge3O 12 .

[0066] Figure 5 The photoluminescence emission spectrum (excitation wavelength: λ 4-x ex = 365 nm) of Bi 12 Ge3O exThe emission spectra of the samples were measured by a spectrometer (FLS920, Edinburgh Instruments) with a 450W Xe lamp as the excitation source and a photomultiplier as the detector. The emission spectra of the samples were measured at room temperature with the excitation wavelength of 272 nm and the corresponding normalized integral area. With the increase of the cerium doping concentration, the photoluminescence intensity first decreases and then increases, reaching the lowest emission intensity at x = 0.03. When the doping concentration is 0.005, 0.01, 0.03, 0.05, and 0.1, the integral intensity of the emission spectrum is 66%, 68%, 29%, 55%, and 77% of that of the undoped bismuth germanate. It is shown that the doping of cerium can reduce the luminescence intensity and improve the radiation resistance. In addition, the increase of the cerium concentration leads to the red shift of the emission peak, which can reduce the spectral self-absorption to a certain extent.

[0067] Figure 6 The Bi 4-x Ge3O 12 :xCe (Examples 1, 2, 3, 4, 5, 6) ceramic powder excitation spectrum (monitoring wavelength: λ em = 467 nm), the peak of the excitation spectrum is located at 272 nm, which shows that the doping of cerium does not introduce new excitation peaks.

[0068] Figure 7 The X-ray excitation emission diagrams of Examples 1, 3, 4, and 5 are given, which also show that the doping of cerium can reduce the fluorescence output of bismuth germanate.

[0069] Figure 8 It is shown that the decay curve of the undoped bismuth germanate follows a single exponential equation, and the average decay time is 328 ns, which further verifies that the broadband emission is due to the electronic transition of Bi 3+ .

[0070] The cerium-doped bismuth germanate has a relatively short lifetime, which is crucial for the fast scintillator response from the application point of view. In general, the fluorescence decay curve can detect the energy transfer process between the dopants in the fluorescent powder. It is observed that the fluorescence lifetime becomes shorter (the average decay time is 268 ns) after the doping of Ce in Example 4, which indicates that the energy transfer occurs between the matrix and the cerium dopant. Figure 9

[0071] Finally, it is necessary to point out that the above examples are only used to further illustrate the technical solutions of the present application, and cannot be understood as limiting the protection scope of the present application. Some non-essential improvements and adjustments made by the person skilled in the art according to the above content of the present application all belong to the protection scope of the present application.​

Claims

1. A cerium-doped bismuth germanate scintillating ceramic material, characterized in that: The chemical formula of the cerium-doped bismuth germanate scintillating ceramic material is Bi 4-x Ge3O 12 :xCe, where 0.03≤x≤0.05; Ce element is Ce 3+ and Ce 4+ Formally doped in Bi position; among them Ce 4+ It accounts for 70-80% of the total Ce element. 3+ It accounts for 20-30% of the total Ce element, and the sum of the two is 100%.

2. The cerium-doped bismuth germanate scintillating ceramic material according to claim 1, characterized in that: When x=0.03, Ce 4+ Accounting for 76%, Ce 3+ Accounting for 24%.

3. The cerium-doped bismuth germanate scintillating ceramic material according to claim 1, characterized in that: The cerium-doped bismuth germanate scintillation ceramic material is in the form of ceramic powder or ceramic block.

4. The cerium-doped bismuth germanate scintillating ceramic material according to claim 3, characterized in that The particle size of the ceramic powder is 50 nm to 50 μm.

5. A method for preparing a cerium-doped bismuth germanate scintillating ceramic material according to any one of claims 1 to 4, characterized in that: The chemical formula of the cerium-doped bismuth germanate scintillating ceramic material is Bi 4-x Ge3O 12 :xCe, where 0.03≤x≤0.05; The cerium-doped bismuth germanate scintillation ceramic material is in the form of ceramic powder, and the preparation method includes: (1) According to the chemical formula of cerium-doped bismuth germanium oxide scintillating ceramic material Bi4Ge3O 12 :xCe weighing Bi source, Ge source and Ce source and mixing them to obtain a mixed powder; (2) Sintering the mixed powder at 800-900° C. for 1-10 hours to obtain the cerium-doped bismuth germanate scintillating ceramic material.

6. The preparation method according to claim 5, characterized in that The Bi source is Bi2O3; the Ge source is GeO2; and the Ce source is at least one of CeO2, Ce2O3, CeF3, and Ce(NO3)3.

7. The preparation method according to claim 5, wherein The sintering atmosphere is air atmosphere, oxygen atmosphere or reducing atmosphere; the reducing atmosphere is a mixture of inert atmosphere and hydrogen, and the hydrogen content does not exceed 10 vol%.

8. A method for preparing a cerium-doped bismuth germanate scintillating ceramic material according to any one of claims 1 to 4, characterized in that: The chemical formula of the cerium-doped bismuth germanate scintillating ceramic material is Bi 4-x Ge3O 12 :xCe, where 0.03≤x≤0.05; The cerium-doped bismuth germanate scintillation ceramic material is in the form of a ceramic block, and the preparation method includes: (1) According to the chemical formula of cerium-doped bismuth germanium oxide scintillating ceramic material Bi4Ge3O 12 :xCe weighing Bi source, Ge source and Ce source and mixing them to obtain a mixed powder; (2) Pressing the mixed powder into a shape to obtain a ceramic green body; (3) The ceramic green body is subjected to hot pressing or hot isostatic pressing to obtain the cerium-doped bismuth germanium oxide scintillating ceramic material.

9. The preparation method according to claim 8, characterized in that The Bi source is Bi2O3; the Ge source is GeO2; and the Ce source is selected from at least one of CeO2, Ce2O3, CeF3, and Ce(NO3)3.

10. The preparation method according to claim 8, characterized in that The parameters of the hot pressing sintering include: a pressure of 0.03 to 5 GPa, a sintering temperature of 500 to 900° C., and a sintering time of 1 to 20 hours; The parameters of the hot isostatic pressing sintering include: a pressure of 0.03 to 5 GPa, a sintering temperature of 500 to 900° C., and a sintering time of 1 to 20 hours.

11. Use of the cerium-doped bismuth germanate scintillating ceramic material according to any one of claims 1 to 4 in the field of radiation detection, characterized in that: The radiation detection fields include high energy physics, nuclear physics, space physics, oil well logging, geological exploration, safety inspection and industrial detection.

Images