Power module and power device having the same

Abstract

The present invention provides a power module and a power device having the same, the power module includes a liner and a chip, a first conductive structure and a second conductive structure are arranged on the liner, the first conductive structure and the second conductive structure are both axisymmetric structures, the axes of symmetry of the first conductive structure and the second conductive structure extend along the length direction of the power module, and the first conductive structure and the second conductive structure are both arranged with a chip; wherein the power module also includes a sheet-shaped first interconnecting sheet and a second interconnecting sheet, the upper surface of the chip is conductively connected to the first conductive structure and / or the second conductive structure through the first interconnecting sheet, and the first conductive structure is conductively connected to the second conductive structure through the second interconnecting sheet. The technical solution provided by the present application can solve the problem of poor heat dissipation capacity of the power module in the related art.

Description

Technical Field

[0001] The present invention relates to the technical field of power devices, and in particular to a power module and a power device having the same. Background Art

[0002] In order to meet the large-scale development and utilization of renewable energy, traditional power grids are developing towards smart grids represented by the widespread application of power electronics technology. Power electronic devices play an irreplaceable role in various fields such as smart grid construction, FACTS (flexible alternating current transmission system) high-voltage transmission, and new energy access. This undoubtedly puts forward higher demands on high-voltage, large-capacity, high-frequency, and high-temperature resistant power electronic modules.

[0003] Silicon carbide (SiC) power modules have the advantages of high voltage resistance, strong current capacity, high operating frequency, and low switching loss, and are suitable for high voltage, high temperature, and high frequency applications. However, the current packaging structure and packaging process are based on the development of silicon-based modules, and cannot fully tap the application potential of silicon carbide modules. Therefore, it is urgent to develop new packaging solutions based on the performance characteristics of silicon carbide.

[0004] In related technologies, the 62mm power module, as a standardized model, takes into account the advantages of small parasitic parameters and replacement material costs and is widely used in the new energy industry. The current of the current commercial module is below 600A. A single module cannot meet the needs of new power systems and new energy fields. It can only be connected in parallel with multiple modules. The parallel connection of multiple modules not only increases the volume space of the equipment and the number of corresponding heat dissipation and drive accessories, but also increases the overall cost of the equipment. At the same time, due to factors such as chip layout, power aluminum wire and welding terminals, the traditional solution has poor current flow and heat dissipation capabilities of existing modules, which increases the risk of failure during application and cannot meet the application requirements of high power density, high temperature resistance and high reliability. Summary of the invention

[0005] The present invention provides a power module and a power device having the same, so as to solve the problem of poor heat dissipation capability of the power module in the related art.

[0006] According to one aspect of the present invention, a power module is provided, the power module comprising a backing plate and a chip, a first conductive structure and a second conductive structure are arranged on the backing plate, the first conductive structure and the second conductive structure are both axisymmetric structures, the axes of symmetry of the first conductive structure and the second conductive structure both extend along the length direction of the power module, and the chips are arranged on the first conductive structure and the second conductive structure; wherein the power module further comprises a sheet-shaped first interconnecting sheet and a second interconnecting sheet, the upper surface of the chip is conductively connected to the first conductive structure and / or the second conductive structure through the first interconnecting sheet, and the first conductive structure is conductively connected to the second conductive structure through the second interconnecting sheet.

[0007] Further, the width of the first interconnecting sheet is between 1.5 mm and 3.0 mm.

[0008] Further, the width of the second interconnecting sheet is between 1.5 mm and 4.0 mm.

[0009] Further, the ratio of the width dimension of the first interconnection sheet to the width dimension of the chip is between 0.3 and 0.6.

[0010] Further, a portion of the first interconnection sheet contacting the upper surface of the chip is provided with a wetting groove; and / or a portion of the first interconnection sheet contacting the upper surface of the first conductive structure and / or the second conductive structure is provided with a wetting groove.

[0011] Furthermore, multiple chips are arranged on the first conductive structure and the second conductive structure, and the multiple chips on the first conductive structure and the multiple chips on the second conductive structure are symmetrically arranged on both sides of the symmetry axis; on the first conductive structure, the two ends of the first interconnection sheet are respectively conductively connected to the upper surfaces of the two symmetrically arranged chips, and the middle part of the first interconnection sheet is conductively connected to the first conductive structure; on the second conductive structure, the two ends of the first interconnection sheet are respectively conductively connected to the upper surfaces of the two symmetrically arranged chips, and the middle part of the first interconnection sheet is conductively connected to the second conductive structure.

[0012] Further, the first interconnection sheet includes: a main body segment, the lower surface of which is conductively connected to the first conductive structure or the second conductive structure; a first interface interconnection segment, located on the side of the main body segment and connected to the main body segment, the lower surface of the first interface interconnection segment is conductively connected to the upper surface of one of the two symmetrically arranged chips; a second interface interconnection segment, located on the side of the main body segment and connected to the main body segment, the lower surface of the second interface interconnection segment is conductively connected to the upper surface of the other of the two symmetrically arranged chips.

[0013] Furthermore, the first interconnection sheet also includes a first connecting section, which is located on the side of the main body section, and the two ends of the first connecting section are respectively connected to the main body section and the first interface interconnection section, and the lower surface of the first connecting section is higher than the lower surface of the main body section and / or the lower surface of the first interface interconnection section; the first interconnection sheet also includes a second connecting section, which is located on the side of the main body section, and the two ends of the second connecting section are respectively connected to the main body section and the second interface interconnection section, and the lower surface of the second connecting section is higher than the lower surface of the main body section and / or the lower surface of the second interface interconnection section.

[0014] Furthermore, the first interface interconnection section, the second interface interconnection section and the main body section are all flat plate structures; the first connecting section and / or the second connecting section are all arched plate structures.

[0015] Further, the second interconnect sheet includes: a third interface interconnect segment, the lower surface of the third interface interconnect segment is conductively connected to the second conductive structure; a fourth interface interconnect segment, the lower surface of the fourth interface interconnect segment is conductively connected to the first conductive structure; a third connecting segment, the two ends of the third connecting segment are respectively connected to the third interface interconnect segment and the fourth interface interconnect segment, and the lower surface of the third connecting segment is higher than the lower surface of the third interface interconnect segment and / or the lower surface of the fourth interface interconnect segment.

[0016] Furthermore, the third interface interconnection section and the fourth interface interconnection section are both flat plate structures; and the third connection section is an arched plate structure.

[0017] Further, the first conductive structure includes a first sub-conductive layer and two second sub-conductive layers, the first sub-conductive layer and the second sub-conductive layer are arranged at intervals, the axis of the first sub-conductive layer is coaxial with the symmetry axis, the two second sub-conductive layers are respectively located on both sides of the first sub-conductive layer in the width direction of the power module, chips are arranged on the two second sub-conductive layers, the upper surfaces of the chips on the two second sub-conductive layers are conductively connected to the first sub-conductive layer through the first interconnection sheet, and the first sub-conductive layer is conductively connected to the second conductive structure through the second interconnection sheet.

[0018] Further, the second conductive structure includes a third sub-conductive layer and a fourth sub-conductive layer, the third sub-conductive layer has a notch at one end toward the first sub-conductive layer in the length direction of the power module, the fourth sub-conductive layer extends into the notch, the axis of the fourth sub-conductive layer is coaxial with the axis of symmetry, and chips are arranged on positions on both sides of the notch in the width direction of the power module of the third sub-conductive layer, the first sub-conductive layer is conductively connected to the third sub-conductive layer through the second interconnection sheet, and the upper surface of the chip on the third sub-conductive layer is conductively connected to the fourth sub-conductive layer through the first interconnection sheet.

[0019] Furthermore, the power module also includes a control component, which includes a mounting substrate and a resistor element arranged on the mounting substrate; wherein a mounting position is arranged on the surface of the first conductive structure and / or the second conductive structure, one of the surfaces of the mounting substrate in its thickness direction is connected to the mounting position, and the resistor element is located on another surface of the mounting substrate in its thickness direction.

[0020] According to another aspect of the present invention, a power device is provided, and the power device includes the power module provided above.

[0021] Furthermore, the power device includes two power modules, and the two power modules are arranged at intervals and symmetrically in a width direction of the power module.

[0022] Furthermore, the power device also includes a power terminal, which is a plate-like structure. The power terminal includes a terminal foot section, a first plate section, a second plate section and a lead-out plate section connected in sequence. The terminal foot section and the second plate section are respectively arranged at an angle to the first plate section, and the extension directions of the terminal foot section and the second plate section are opposite. The lead-out plate section is arranged at an end of the second plate section away from the first plate section.

[0023] Furthermore, the power terminal includes a first terminal, a second terminal and a third terminal, and the number of terminal foot sections of the first terminal and the number of terminal foot sections of the third terminal are both greater than the number of terminal foot sections of the second terminal.

[0024] The technical solution of the present invention is applied, and the power module includes a liner and a chip, and a first conductive structure and a second conductive structure are arranged on the liner, and the first conductive structure and the second conductive structure are both axisymmetric structures, and the symmetry axes of the first conductive structure and the second conductive structure extend along the length direction of the power module, and the first conductive structure and the second conductive structure are both provided with a chip. Among them, the power module also includes a sheet-shaped first interconnection sheet and a second interconnection sheet, and the upper surface of the chip is conductively connected to the first conductive structure and / or the second conductive structure through the first interconnection sheet, and the first conductive structure is conductively connected to the second conductive structure through the second interconnection sheet. With the above structure, the conductive connection between the chip and the conductive structure is realized by using the sheet-shaped first interconnection sheet, and the conductive connection between the conductive structures is realized by using the sheet-shaped second interconnection sheet. The heat dissipation area of ​​the first interconnection sheet and the second interconnection sheet is large, which can ensure the rapid conduction of the current heat flow. In addition, since the first conductive structure and the second conductive structure are both axisymmetric structures, the symmetry axes of the first conductive structure and the second conductive structure extend along the length direction of the power module, and the symmetrical dispersion arrangement of the conductive structure can be realized, which is conducive to the heat dissipation of the dispersed parallel connection of the chip. Therefore, the first interconnection sheet and the second interconnection sheet can ensure the rapid conduction of current and heat flow, and the first conductive structure and the second conductive structure can realize the symmetrical and dispersed arrangement of the conductive structure, which is helpful for the dispersed parallel heat dissipation of the chips, thereby improving the heat dissipation capacity of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0026] Figure 1 A schematic diagram of a part of the structure of a power device provided in an embodiment of the present invention without power terminals is shown;

[0027] Figure 2 Shows Figure 1 A schematic structural diagram of the first interconnection sheet in FIG.

[0028] Figure 3 Shows Figure 1 A schematic structural diagram of the first interconnection sheet from another perspective;

[0029] Figure 4 Shows Figure 1 A front view of the first interconnection sheet in;

[0030] Figure 5 Shows Figure 1 a top view of a first interconnect sheet in;

[0031] Figure 6 Shows Figure 1 A schematic diagram of the structure of the second interconnection sheet in FIG.

[0032] Figure 7 Shows Figure 1 A schematic structural diagram of the second interconnection sheet from another perspective;

[0033] Figure 8 Shows Figure 1 Exploded diagram of the control components in;

[0034] Fig. 9 A partial structural schematic diagram of a power device provided with a power terminal according to an embodiment of the present invention is shown;

[0035] Fig.10 A top view of a partial structure of a power device provided with a power terminal according to an embodiment of the present invention is shown.

[0036] The above drawings include the following reference numerals:

[0037] 10. lining plate; 11. first conductive structure; 111. first sub-conductive layer; 1111. first section; 1112. second section; 112. second sub-conductive layer; 1121. first side edge; 1122. second side edge; 12. second conductive structure; 121. third sub-conductive layer; 1211. notch; 12111. first slot section; 12112. second slot section; 12113. third slot section; 1212. third section; 1213. fourth section; 1214. fifth section; 122. fourth sub-conductive layer; 13. driving signal connection conductive layer; 14. first lining plate; 15. second lining plate;

[0038] 20. Chip;

[0039] 30. first interconnecting sheet; 31. main body section; 32. first interface interconnecting section; 33. second interface interconnecting section; 34. wetting groove; 35. first connecting section; 36. second connecting section; 37. connecting groove;

[0040] 40. second interconnecting sheet; 41. third interface interconnecting section; 42. fourth interface interconnecting section; 43. third connecting section; 44. fourth connecting section;

[0041] 50, control component; 51, mounting substrate; 511, substrate body; 512, first metal layer; 513, second metal layer; 52, resistor element;

[0042] 60, power terminal; 61, terminal foot section; 62, first section; 63, second section; 64, lead-out section; 65, first terminal; 66, second terminal; 67, third terminal;

[0043] 70. Power module. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] like Figures 1 to 10 As shown, an embodiment of the present invention provides a power module, the power module includes a liner 10 and a chip 20, a first conductive structure 11 and a second conductive structure 12 are arranged on the liner 10, the first conductive structure 11 and the second conductive structure 12 are both axisymmetric structures, the symmetry axes of the first conductive structure 11 and the second conductive structure 12 extend along the length direction of the power module, and the chip 20 is arranged on the first conductive structure 11 and the second conductive structure 12. The power module further includes a sheet-shaped first interconnecting sheet 30 and a second interconnecting sheet 40, the upper surface of the chip 20 is conductively connected to the first conductive structure 11 and / or the second conductive structure 12 through the first interconnecting sheet 30, and the first conductive structure 11 is conductively connected to the second conductive structure 12 through the second interconnecting sheet 40.

[0046] The power module provided by this embodiment is applied, and the conductive connection between the chip 20 and the conductive structure is realized by using the sheet-shaped first interconnection sheet 30, and the conductive connection between the conductive structures is realized by using the sheet-shaped second interconnection sheet 40. The heat dissipation area of ​​the first interconnection sheet 30 and the second interconnection sheet 40 is large, which can ensure the rapid conduction of the current heat flow. In addition, since the first conductive structure 11 and the second conductive structure 12 are both axisymmetric structures, the symmetry axes of the first conductive structure 11 and the second conductive structure 12 extend along the length direction of the power module, which can realize the symmetrical and dispersed arrangement of the conductive structure, which is helpful for the dispersed and parallel heat dissipation of the chip 20. Therefore, the first interconnection sheet 30 and the second interconnection sheet 40 can ensure the rapid conduction of the current heat flow, and the first conductive structure 11 and the second conductive structure 12 can realize the symmetrical and dispersed arrangement of the conductive structure, which is helpful for the dispersed and parallel heat dissipation of the chip 20, thereby improving the heat dissipation capacity of the power module.

[0047] It should be noted that the lining plate 10 is provided with a first conductive structure 11 and a second conductive structure 12, including the following two structures: the first is that the lining plate 10 is an integrated structure, and the integrated lining plate 10 is provided with the first conductive structure 11 and the second conductive structure 12; the second is that the lining plate 10 is a split structure, that is, the lining plate 10 includes a first lining plate 14 and a second lining plate 15 which are spaced apart, the first lining plate 14 is provided with the first conductive structure 11, and the second lining plate 15 is provided with the second conductive structure 12.

[0048] In this embodiment, the lining plate 10 is of the second structure and includes two first lining plates 14 and two second lining plates 15 .

[0049] like Figure 2 , Figure 3 as well as Figure 5 As shown, the portion of the first interconnection sheet 30 in contact with the upper surface of the chip 20 is provided with a wetting groove 34, the portion of the first interconnection sheet 30 in contact with the upper surface of the first conductive structure 11 is provided with a wetting groove 34, and the portion of the first interconnection sheet 30 in contact with the upper surface of the second conductive structure 12 is provided with a wetting groove 34. The wetting groove 34 can be used to wet the solder to form a solder layer with a concave upper surface, which increases the wetting boundary length of the interconnection material compared to the case where there is no groove at the interconnection interface, thereby improving the strength of the interface connection.

[0050] like Figure 1As shown, in this embodiment, a plurality of chips 20 are disposed on the first conductive structure 11 and the second conductive structure 12, and the plurality of chips 20 on the first conductive structure 11 and the plurality of chips 20 on the second conductive structure 12 are symmetrically arranged on both sides of the symmetry axis. On the first conductive structure 11, the two ends of the first interconnection sheet 30 are respectively conductively connected to the upper surfaces of the two symmetrically arranged chips 20, and the middle portion of the first interconnection sheet 30 is conductively connected to the first conductive structure 11. On the second conductive structure 12, the two ends of the first interconnection sheet 30 are respectively conductively connected to the upper surfaces of the two symmetrically arranged chips 20, and the middle portion of the first interconnection sheet 30 is conductively connected to the second conductive structure 12.

[0051] Since the multiple chips 20 on the first conductive structure 11 and the multiple chips 20 on the second conductive structure 12 are symmetrically arranged on both sides of the symmetry axis, the interconnection length between the upper surface of the chip 20 and the conductive structure can be equal and moderate. In the related art, the chip layout position is relatively concentrated, resulting in different and generally longer interconnection lengths between the upper surface of the chip and the upper copper layer.

[0052] like Figure 2 As shown, in this embodiment, the first interconnection sheet 30 includes a main body section 31, a first interface interconnection section 32, and a second interface interconnection section 33. The lower surface of the main body section 31 is conductively connected to the first conductive structure 11 or the second conductive structure 12. The first interface interconnection section 32 is located at the side of the main body section 31 and is connected to the main body section 31, and the lower surface of the first interface interconnection section 32 is conductively connected to the upper surface of one of the two symmetrically arranged chips 20. The second interface interconnection section 33 is located at the side of the main body section 31 and is connected to the main body section 31, and the lower surface of the second interface interconnection section 33 is conductively connected to the upper surface of the other of the two symmetrically arranged chips 20.

[0053] Since the first interconnection sheet 30 connects at least two chips through the first interface interconnection section 32 and the second interface interconnection section 33, the number of connectors in the related art can be reduced, the space occupied in the power module can be reduced, the space utilization rate can be improved, and the arrangement of devices can be facilitated.

[0054] It should be noted that in the related art, the power current conduction between the components inside the power module relies on the metal interconnection interface set on the components and the connectors connecting the metal interconnection interfaces. For example, the interconnection between the upper surface of the chip and the upper copper layer. However, the existing connectors are mostly used to realize the signal connection of two interconnection interfaces. When there are multiple pairs of interfaces that need to be interconnected, such as when there are multiple pairs of chips on a liner, multiple connectors are required, which will occupy a larger space in the module, resulting in low device space utilization and placing greater restrictions on device layout.

[0055] In this embodiment, the wetting groove 34 extends to at least one of the lower surface of the main body section 31, the lower surface of the first interface interconnection section 32, and the lower surface of the second interface interconnection section 33. The wetting groove 34 can be used to wet the solder to form a solder layer with a concave upper surface. Compared with the case where there is no groove at the interconnection interface, the wetting boundary length of the interconnection material is increased, thereby improving the strength of the interface connection.

[0056] It should be noted that the wetting groove 34 extends along the length direction of the first interconnection sheet 30, so that the wetting groove 34 on the first interconnection sheet 30 has a larger length, thereby making the first interconnection sheet 30 and the chip have a larger wetting boundary length, thereby improving the strength of the interface connection.

[0057] like Figure 2 As shown, the first interconnection sheet 30 further includes a first connection section 35, which is located at the side of the main body section 31, and the two ends of the first connection section 35 are respectively connected to the main body section 31 and the first interface interconnection section 32, and the lower surface of the first connection section 35 is higher than the lower surface of the main body section 31 and / or the lower surface of the first interface interconnection section 32. The first interconnection sheet 30 further includes a second connection section 36, which is located at the side of the main body section 31, and the two ends of the second connection section 36 are respectively connected to the main body section 31 and the second interface interconnection section 33, and the lower surface of the second connection section 36 is higher than the lower surface of the main body section 31 and / or the lower surface of the second interface interconnection section 33. The main body section 31 and the first interface interconnection section 32 are connected by the first connection section 35, and the main body section 31 and the second interface interconnection section 33 are connected by the second connection section 36, which has the advantages of simple structure and easy processing.

[0058] Since the chip is disposed on the substrate, the main body section 31 is connected to the conductive structure of the substrate, and the interface interconnection section is connected to the chip, so that there is a height difference between the main body section 31 and the interface interconnection section. Generally speaking, the lower surface of the interface interconnection section is higher than the lower surface of the main body section 31.

[0059] It should be noted that the width dimension of the first interconnection sheet 30 refers to the width dimensions of the first interface interconnection segment 32 , the second interface interconnection segment 33 , the first connection segment 35 and the second connection segment 36 .

[0060] In this embodiment, the highest point of the lower surface of the first connecting segment 35 is higher than the highest point of the lower surface of the main body segment 31 and the highest point of the lower surface of the first interface interconnection segment 32. The highest point of the lower surface of the second connecting segment 36 is higher than the highest point of the lower surface of the main body segment 31 and the highest point of the lower surface of the second interface interconnection segment 33.

[0061] The first interface interconnection section 32 and the second interface interconnection section 33 are both flat plate structures, which can increase the contact area between the interface interconnection section and the chip, thereby improving the connection strength and heat dissipation capability. In addition, the main body section 31 is a flat plate structure, which can increase the contact area between the main body section 31 and the conductive structure, thereby improving the connection strength and heat dissipation capability.

[0062] Specifically, the first connecting section 35 and / or the second connecting section 36 are both arched plate structures, the highest point of the upper surface of the first connecting section 35 is higher than the highest point of the upper surface of the main section 31 and the highest point of the upper surface of the first interface interconnection section 32, and the highest point of the upper surface of the second connecting section 36 is higher than the highest point of the upper surface of the main section 31 and the highest point of the upper surface of the second interface interconnection section 33.

[0063] In this embodiment, the first connecting section 35 and the second connecting section 36 are both arched plate structures.

[0064] In this embodiment, the first connecting section 35 and the second connecting section 36 are both provided with a connecting groove 37, which can effectively increase the flexibility of the first interconnection sheet 30, reduce the maximum interlayer stress when relative displacement occurs between different interconnection interfaces, and help improve the reliability of the interconnection interface.

[0065] Specifically, the connection groove 37 is connected to the wetting groove 34, which is convenient for processing.

[0066] like Figure 6 and Figure 7 As shown, the second interconnection sheet 40 includes a third interface interconnection segment 41, a fourth interface interconnection segment 42 and a third connection segment 43. The lower surface of the third interface interconnection segment 41 is conductively connected to the second conductive structure 12. The lower surface of the fourth interface interconnection segment 42 is conductively connected to the first conductive structure 11. Both ends of the third connection segment 43 are respectively connected to the third interface interconnection segment 41 and the fourth interface interconnection segment 42, and the lower surface of the third connection segment 43 is higher than the lower surface of the third interface interconnection segment 41 and / or the lower surface of the fourth interface interconnection segment 42.

[0067] In this embodiment, the highest point of the lower surface of the third connecting segment 43 is higher than the highest point of the lower surface of the third interface interconnection segment 41 and the highest point of the lower surface of the fourth interface interconnection segment 42 .

[0068] In this embodiment, the lower surface of the third interface interconnection segment 41 can be conductively connected to the second conductive structure 12 by welding (solder melting and resolidification), and the lower surface of the fourth interface interconnection segment 42 can be conductively connected to the first conductive structure 11 by welding (solder melting and resolidification).

[0069] It should be noted that the width dimension of the second interconnection sheet 40 refers to the width dimensions of the third interface interconnection segment 41 , the fourth interface interconnection segment 42 and the third connection segment 43 .

[0070] It should be noted that the lower surface of the third interface interconnection segment 41 can also be conductively connected to the second conductive structure 12 by ultrasonic terminal welding, and the lower surface of the fourth interface interconnection segment 42 can also be conductively connected to the first conductive structure 11 by ultrasonic terminal welding.

[0071] The third interface interconnection segment 41 and the fourth interface interconnection segment 42 are both flat plate structures, which can increase the contact area between the third interface interconnection segment 41 and the fourth interface interconnection segment 42 and the conductive structure, thereby improving the connection strength and heat dissipation capability.

[0072] like Figure 6 As shown, the second interconnection sheet 40 further includes a fourth connection segment 44, the third interface interconnection segment 41, the fourth interface interconnection segment 42 and the third connection segment 43 constitute an interconnection main segment, the second interconnection sheet 40 includes two interconnection main segments, the two ends of the fourth connection segment 44 are respectively connected to the two interconnection main segments, and the lower surface of the fourth connection segment 44 is conductively connected to the first sub-conductive layer 111. By providing the fourth connection segment 44, the connection area between the first conductive structure 11 and the second conductive structure 12 can be increased, and the connection reliability can be improved.

[0073] like Figure 1 As shown, the first conductive structure 11 includes a first sub-conductive layer 111 and two second sub-conductive layers 112, the first sub-conductive layer 111 and the second sub-conductive layer 112 are arranged at intervals, the axis of the first sub-conductive layer 111 is coaxial with the symmetry axis, the two second sub-conductive layers 112 are respectively located on both sides of the first sub-conductive layer 111 in the width direction of the power module, the two second sub-conductive layers 112 are provided with chips 20, the upper surfaces of the chips 20 on the two second sub-conductive layers 112 are conductively connected to the first sub-conductive layer 111 through the first interconnection sheet 30, and the first sub-conductive layer 111 is conductively connected to the second conductive structure 12 through the second interconnection sheet 40. By separating the two second sub-conductive layers 112 with the first sub-conductive layer 111 and providing the chips 20 on the two second sub-conductive layers 112, the spacing between the chips 20 can be further increased, so that the chips 20 are arranged as dispersedly as possible, and the heat dissipation performance is improved.

[0074] like Figure 1As shown, the first sub-conductive layer 111 includes a first segment 1111 and a second segment 1112 which are perpendicular to each other, the axis of the first segment 1111 is coaxial with the axis of symmetry, one end of the first segment 1111 is connected to the middle of the second segment 1112, the second segment 1112 is arranged between the first segment 1111 and the second conductive structure 12, the two second sub-conductive layers 112 are respectively located on both sides of the first segment 1111 in the width direction of the power module, the upper surfaces of the chips 20 on the two second sub-conductive layers 112 are conductively connected to the first segment 1111, and the second segment 1112 is conductively connected to the second conductive structure 12. With the above structure, the perpendicular first segment 1111 and the second segment 1112 together form a T-shaped structure.

[0075] Specifically, the first section 1111 is used to separate the two second sub-conductive layers 112, so as to facilitate the dispersed arrangement of the chips 20. In addition, the second section 1112 is disposed between the first section 1111 and the second conductive structure 12, and then the second section 1112 is conductively connected to the second conductive structure 12, so as to reduce the distance between the first sub-conductive layer 111 and the second conductive structure 12, and facilitate the conductive connection between the first sub-conductive layer 111 and the second conductive structure 12.

[0076] It should be noted that the ratio of the width of the second sub-conductive layer 112 to the width of the first section 1111 is between 1.5 and 1.8. The lower limit (1.5) of the value guarantees the distance between the edge of the chip 20 and the edge of the second sub-conductive layer 112 in the width direction of the power module, and the lower limit (1.5) of the value guarantees the distance between the edge of the main section 31 of the first interconnection sheet 30 and the edge of the first section 1111 in the width direction of the power module, so that there is a minimum distance in the width direction of the power module that meets the insulation requirements. The upper limit (1.8) of the value enables the main section 31 of the first interconnection sheet 30 to have a sufficient width (the size along the width direction of the power module) on the basis that the edge of the main section 31 of the first interconnection sheet 30 and the edge of the first section 1111 in the width direction of the power module meet the insulation requirements (under the premise) to meet the requirements of reliable interface interconnection, and at the same time have a relatively ideal heat dissipation effect (because the connection area with the first section 1111 is large).

[0077] The width of the first segment 1111 and the width of the second sub-conductive layer 112 are both dimensions in the width direction of the power module.

[0078] like Figure 1As shown, the second sub-conductive layer 112 is a rectangular structure, which includes a first side 1121 and a second side 1122 that are perpendicular to each other, the first side 1121 is arranged away from the second section 1112 and is flush with an end of the first section 1111 away from the second section 1112, and the second side 1122 is arranged away from the first section 1111 and is flush with the end of the second section 1112. With the above structure, the appearance of the first conductive structure 11 is more regular, which facilitates the uniform and dispersed arrangement of the chips 20.

[0079] It should be noted that the first side 1121 is arranged away from the second section 1112 and is flush with the end of the first section 1111 away from the second section 1112, wherein “the first side 1121 is arranged away from the second section 1112” means that the side of the four sides of the rectangular structure that is farthest from the second section 1112 is the first side 1121.

[0080] It should be noted that the second side 1122 is arranged away from the first section 1111 and is flush with the end of the second section 1112 , wherein “the second side 1122 is arranged away from the first section 1111 ” means that the side of the four sides of the rectangular structure that is farthest from the first section 1111 is the second side 1122 .

[0081] In this embodiment, the second sub-conductive layer 112 is a rectangular structure, which means that the second sub-conductive layer 112 is rectangular in the plane as a whole, but due to manufacturing reasons, its four corners are “rounded”.

[0082] like Figure 1 As shown, the second conductive structure 12 includes a third sub-conductive layer 121 and a fourth sub-conductive layer 122, the third sub-conductive layer 121 has a notch 1211 at one end facing the first sub-conductive layer 111 in the length direction of the power module, the fourth sub-conductive layer 122 extends into the notch 1211, the axis of the fourth sub-conductive layer 122 is coaxial with the symmetry axis, the third sub-conductive layer 121 is provided with chips 20 at positions on both sides of the notch 1211 in the width direction of the power module, the first sub-conductive layer 111 is conductively connected to the third sub-conductive layer 121 through the second interconnection sheet 40, and the upper surface of the chip 20 on the third sub-conductive layer 121 is conductively connected to the fourth sub-conductive layer 122 through the first interconnection sheet 30. The fourth sub-conductive layer 122 is used to separate the chips 20 on the third sub-conductive layer 121, so that the spacing between the chips 20 can be further increased, so that the chips 20 are arranged as dispersedly as possible, and the heat dissipation performance is improved.

[0083] In this embodiment, the third sub-conductive layer 121 includes a third section 1212, a fourth section 1213 and a fifth section 1214. The third section 1212 and the fifth section 1214 are located on the same side of the fourth section 1213. The third section 1212 and the fifth section 1214 are respectively connected to the two ends of the fourth section 1213. The side walls of the third section 1212, the fourth section 1213 and the fifth section 1214 together form a gap 1211. The fourth section 1213 is arranged at an end of the third section 1212 away from the first conductive structure 11. With the above structure, the third section 1212, the fourth section 1213 and the fifth section 1214 together form a U-shaped structure. The two legs of the U-shaped structure are arranged opposite to the second section 1112 of the T-shaped structure, which can further improve the symmetry of the power module.

[0084] It should be noted that one end of the third segment 1212 away from the fourth segment 1213, one end of the fifth segment 1214 away from the fourth segment 1213, and one end of the fourth sub-conductive layer 122 away from the fourth segment 1213 are flush. With the above structure, the shape of the second conductive structure 12 is more regular, which facilitates the uniform and dispersed arrangement of the chips 20.

[0085] like Figure 1 As shown, the gap 1211 includes a first slot segment 12111, a second slot segment 12112 and a third slot segment 12113 which are connected in sequence, and the end of the first slot segment 12111 away from the second slot segment 12112 forms the mouth of the gap 1211, the slot width of the first slot segment 12111 is greater than the slot width of the third slot segment 12113, and the slot width of the second slot segment 12112 gradually decreases in the direction from the first slot segment 12111 to the third slot segment 12113, and the shape of the fourth sub-conductive layer 122 is adapted to the shape of the gap 1211.

[0086] The power device further includes a power terminal 60 , which includes a terminal foot section 61 , and the power terminal 60 is connected to the conductive structure via the terminal foot section 61 .

[0087] In this embodiment, by making the slot width of the first slot segment 12111 greater than the slot width of the third slot segment 12113, the slot width of the second slot segment 12112 gradually decreases in the direction from the first slot segment 12111 to the third slot segment 12113, the fourth sub-conductive layer 122 has a sufficient width, and thus the power terminal 60 correspondingly connected to the fourth sub-conductive layer 122 has a sufficient connection surface.

[0088] like Fig. 9As shown, the power terminal 60 includes a terminal foot plate section 61, a first plate section 62, a second plate section 63 and a lead plate section 64 connected in sequence. In this embodiment, the power terminal 60 includes a first terminal 65, a second terminal 66 and a third terminal 67, and the first terminal 65, the second terminal 66 and the third terminal 67 all include a terminal foot plate section 61, a first plate section 62, a second plate section 63 and a lead plate section 64 connected in sequence.

[0089] Specifically, the first slot section 12111 is wider than the third slot section 12113, which is intended to allow the terminal foot section 61 of the second terminal 66 to have a larger width (the width of the fourth sub-conductive layer 122 at the notch 1211 minus the distance required for insulation (about 1mm) is the maximum width of the terminal foot section under a given conductive layer width). The increase in the width of the terminal foot section is beneficial to: 1. Increasing the reliability of the interconnection between the terminal foot section and the conductive layer (a. The interface interconnection area is increased; b. If solder interconnection is used, the larger width also allows a more suitable wetting groove design); 2. The increase in the width of the terminal foot section leads to an increase in the cross-sectional area of ​​the corresponding first and second plate sections of the terminal, thereby increasing the current carrying capacity of the terminal.

[0090] In other embodiments, if the current is small, so that the width of the terminal foot plate section 61 is appropriately reduced, then the slot width of the first slot section 12111 can be equal to the slot width of the third slot section 12113 .

[0091] In this embodiment, the width of the first interconnecting sheet 30 is between 1.5 mm and 3.0 mm, and can be specifically 1.5 mm, 2 mm, 2.5 mm, 3.0 mm, or any other value between 1.5 mm and 3.0 mm.

[0092] In this embodiment, the width of the second interconnecting sheet 40 is between 1.5 mm and 4.0 mm, and can be specifically 1.5 mm, 2.0 mm, 3.0 mm, 4.0 mm, or any other value between 1.5 mm and 4.0 mm.

[0093] The ratio of the width of the first interconnection sheet 30 to the width of the chip 20 is between 0.3 and 0.6, and can be 0.3, 0.4, 0.5, 0.6, or any other value between 0.3 and 0.6.

[0094] In this embodiment, the lower limit of the numerical range of the interconnection sheet width (1.5 mm) is to ensure that the interconnection sheet has a larger width, with three considerations: a. A larger width allows the interconnection sheet to have a wetting groove in the interface interconnection section, which can achieve a three-dimensional interface layer morphology when using welding operations, and increase the interface interconnection strength. b. The increased width allows a larger interface interconnection area, increases the energy required for interface debonding, and is conducive to improving the reliability of interface interconnection. c. When the thickness of the interconnection sheet is constant, a larger width corresponds to a larger cross-sectional area, which increases the flow capacity of the interconnection sheet.

[0095] It should be noted that the increase in the thickness of the interconnecting sheet can also increase the cross-sectional area of ​​the interconnecting sheet, and thus increase the flow capacity of the interconnecting sheet. However, the increase in the thickness of the interconnecting sheet has a "cubic" effect on the increase in the stiffness of the interconnecting sheet, which is much stronger than the "linear" effect of increasing the width on the increase in stiffness, which is not conducive to the reliability of the interface interconnection.

[0096] In this embodiment, the upper limit of the numerical range of the interconnection sheet size width is determined by the width of the interface to be interconnected. For example, the width of the interface interconnection section of the first interconnection sheet 30 in the interconnectable area on the upper surface of the chip 20 is 3.07 mm, so 3.0 mm is taken downward. The width of the conductive layer of the second interconnection sheet 40 in the area to be interconnected near the first slot section 12111 is 6 mm. Considering that the third interface interconnection section 41 of the second interconnection sheet 40 and the third sub-conductive layer 121 at the boundary of the first slot section 12111 must have a recommended minimum distance of 1 mm in the width direction of the power module to meet the insulation requirements, the upper limit is 4 mm.

[0097] It should be noted that the recommended minimum distance is the minimum distance recommended from the insulation perspective during design, but this minimum distance is not the minimum limit value in the physical sense.

[0098] like Figure 1 and Figure 8 As shown, in this embodiment, the power module further includes a control component 50, and the control component 50 includes a mounting substrate 51 and a resistor element 52 disposed on the mounting substrate 51. The surface of the first conductive structure 11 and / or the second conductive structure 12 is provided with a mounting position, one surface of the mounting substrate 51 in the thickness direction thereof is connected to the mounting position, and the resistor element 52 is located on another surface of the mounting substrate 51 in the thickness direction thereof.

[0099] By providing the control component 50 as a mounting substrate 51 and a resistor element 52 disposed on the mounting substrate 51, and mounting the resistor element 52 on the first conductive structure 11 and / or the second conductive structure 12 through the mounting substrate 51, a miniaturized discrete design of the control component 50 can be achieved, and after the control component 50 itself is assembled and processed, the control component 50 is fixed to the mounting position of the liner 10. Compared with the method of directly connecting the resistor element to the liner in the related art, the risk of interconnection process failure of the resistor element and the chain reaction of the overall failure caused by the resistor failure can be reduced or eliminated.

[0100] In this embodiment, the resistor element 52 includes a gate resistor. The power device controls the switching characteristics of the silicon carbide device in the form of a series gate resistor, thereby effectively alleviating the module current sharing problem under switching transients.

[0101] Specifically, this embodiment separates the gate circuit area and the power area into upper and lower side structures, aiming to avoid failure of the entire liner due to gate resistance failure caused by the process and high temperature, thereby improving the overall packaging yield.

[0102] Since the control components are miniaturized and discrete, batch production can be used to complete the interconnection of gate resistors. Since the gate resistors are not heat resistant enough, there is a probability of failure at high process temperatures. Screening can be introduced after the interconnection process to avoid potential failures. Then the control components can be flexibly fixed to the liner according to the liner layout.

[0103] Furthermore, since the mounting substrate 51 has a certain vertical insulation effect, the insulation area of ​​the horizontal surface of the liner of the power device is effectively saved.

[0104] like Figure 8 As shown, in this embodiment, the mounting substrate 51 includes a substrate body 511 and a first metal layer 512 disposed on the substrate body 511, the substrate body 511 is connected to the mounting position, and the resistor element 52 is disposed on the first metal layer 512. The first metal layer 512 is conductively connected to the resistor element 52.

[0105] Specifically, the first metal layer 512 is copper. Copper has high electrical conductivity, can reduce resistance, and improve current transmission efficiency. In addition, copper also has good thermal conductivity, which helps to dissipate heat of power devices and improve the stability and life of power devices.

[0106] Specifically, the substrate body 511 is a ceramic substrate, which can provide a good insulation effect and effectively avoid the influence of heat on the power side on the resistance element, thereby improving the reliability of the device under high-temperature applications.

[0107] Ceramic substrates help improve the efficiency, stability and safety of power electronic systems through their unique thermal, mechanical and electrical properties. Ceramic substrates have high thermal conductivity, large heat capacity and strong heat diffusion function, which can effectively conduct the heat generated by the chip in the power module to the outside to achieve good heat dissipation. Ceramic substrates have strong electrical insulation capabilities, protecting users from the impact of the electrical system while ensuring electrical safety inside the module. Ceramic substrates have a low coefficient of thermal expansion, which helps to maintain mechanical stability and is suitable for some demanding applications.

[0108] Specifically, ceramic substrates can be made of ceramic materials such as aluminum oxide, aluminum nitride, silicon nitride, zirconium oxide, and beryllium oxide. Aluminum oxide has excellent mechanical strength and chemical corrosion resistance, and is suitable for applications with high durability requirements. Zirconia is known for its outstanding toughness and high temperature resistance, and performs well in high temperature and high stress environments. Aluminum nitride has high thermal conductivity and low expansion coefficient, can effectively dissipate heat, and is suitable for high-power electronic devices. The diversity and excellent properties of these ceramic materials provide a wide range of choices and significant performance improvements for the design and application of silicon carbide devices.

[0109] It should be noted that the process of mounting the substrate 51 includes: active metal brazing ceramic substrate (AMB) or direct copper clad ceramic substrate (DBC) or direct copper plated ceramic substrate (DPC).

[0110] It should be noted that a control component 50 is disposed between two adjacent chips, and the control component 50 can be used to separate the two adjacent chips, so as to further make the chips evenly dispersed and arranged.

[0111] In this embodiment, a control component 50 is disposed between two adjacent chips, and “two adjacent chips” refers to two adjacent chips on the same continuous conductive layer.

[0112] like Figure 8 As shown, in this embodiment, the mounting substrate 51 includes a substrate body 511 and a first metal layer 512 and a second metal layer 513 arranged on the substrate body 511, the first metal layer 512 and the second metal layer 513 are respectively located on both sides of the substrate body 511, the resistor element 52 is arranged on the first metal layer 512, and the second metal layer 513 is connected to the mounting position, so that the second metal layer 513 can be used to improve the heat dissipation performance and structural stability of the control component (small warping under heat load).

[0113] In this embodiment, the second metal layer 513 is connected to the mounting position by melting and then solidifying (welding) the solder, which has the advantage of a firm connection.

[0114] In other embodiments, the second metal layer 513 is connected to the mounting position by bonding, which has the advantages of simple connection and easy assembly.

[0115] In other embodiments, if the mounting substrate 51 is not provided with the second metal layer 513 , the substrate body 511 may be connected to the mounting position by welding, sintering or bonding to fix the mounting substrate 51 on the liner 10 .

[0116] like Figure 1 As shown, another embodiment of the present invention provides a power device, which includes the power module provided above. Therefore, the power device can also use the first interconnection sheet 30 and the second interconnection sheet 40 to ensure the rapid conduction of current and heat flow, and use the first conductive structure 11 and the second conductive structure 12 to achieve symmetrical and dispersed arrangement of the conductive structure, which helps to disperse the heat dissipation of the chip 20 in parallel, thereby improving the heat dissipation capacity of the power module.

[0117] In this embodiment, the power device includes two power modules 70 , and the two power modules 70 are arranged at intervals and symmetrically in the width direction of the power modules 70 , so as to further improve the symmetry of the power device.

[0118] It should be noted that, in the width direction of the power module, the sides of the two power modules 70 close to each other are both provided with a driving signal connection conductive layer 13, which can further increase the spacing between the chips on the power module, so that the chips are further dispersedly arranged.

[0119] like Fig. 9 and Fig.10 As shown, the power device also includes a power terminal 60, which is a plate-like structure. The power terminal 60 includes a terminal foot plate section 61, a first plate section 62, a second plate section 63 and a lead plate section 64 connected in sequence. The terminal foot plate section 61 and the second plate section 63 are respectively arranged at an angle to the first plate section 62, and the extension directions of the terminal foot plate section 61 and the second plate section 63 are opposite. The lead plate section 64 is arranged at one end of the second plate section 63 away from the first plate section 62. With the above structure, the power terminal can realize an "L"-shaped structure, so that the ultrasonic terminal welding technology can be applied to the interconnection interface at the power terminal foot, thereby improving the reliability of the terminal interconnection. Specifically, the above structure helps to realize the interconnection with the conductive structure by ultrasonic terminal welding, thereby avoiding multiple reflow soldering and improving the overall temperature resistance of the module.

[0120] In the related art, the layout of power devices is generally a planar layout, and the chip layout position is relatively concentrated, which easily causes the power terminal to be bent greater than 90 degrees (such as 180 degrees) near the interconnection interface between it and the upper copper layer, making it impossible to use ultrasonic terminal welding technology.

[0121] It should be noted that the ultrasonic terminal welding involved in this embodiment uses a "rod-shaped probe" to squeeze the terminal pins of the power terminal in the direction perpendicular to the interconnection interface and vibrate at a high frequency to achieve the effect of interface interconnection. This embodiment involves three power terminals that are all L-shaped structures near their terminal pins, and the terminal pins are not blocked relative to the interconnection interface, so the "rod-shaped probe" can be used for ultrasonic terminal welding technology. In related technologies, due to layout reasons, the power terminals are prone to bending more than 90 degrees (such as 180 degrees) at the terminal pins, resulting in overlapping projections of the power terminals in the plane of the interconnection interface, making it impossible to use ultrasonic terminal welding, that is, the terminal above the terminal pin blocks the "rod-shaped probe", making it unable to work normally.

[0122] In this embodiment, the power terminal 60 includes a first terminal 65, a second terminal 66 and a third terminal 67. The number of terminal pin segments 61 of the first terminal 65 and the number of terminal pin segments 61 of the third terminal 67 are both greater than the number of terminal pin segments 61 of the second terminal 66, so that the first terminal 65 and the third terminal 67 have a higher current carrying capacity.

[0123] Specifically, the number of the terminal foot plate segments 61 of the first terminal 65 and the number of the terminal foot plate segments 61 of the third terminal 67 are both 4, and the number of the terminal foot plate segments 61 of the second terminal 66 is 2.

[0124] It should be noted that, in this embodiment, the high voltage side of the liner adopts a symmetrical and dispersed layout, thereby avoiding the coupling effect caused by the concentrated heating of the chip. The symmetrical design of the liner maximizes the contact area with the bottom surface of the power terminal, and the first terminal 65 and the third terminal 67 further improve the current carrying capacity and reliability of the module by increasing the number of terminal pins.

[0125] The device provided by the embodiment has the following beneficial effects:

[0126] (1) A full copper strip design is used between the chip and the conductive structure, and between the first conductive structure and the second conductive structure, including an M-arch-shaped first interconnection sheet and an N-type second interconnection sheet, which can ensure the rapid conduction of current and heat flow;

[0127] (2) The full “L” shape design of the power terminal enables ultrasonic terminal welding and high temperature applications;

[0128] (3) The structural design of the first terminal 65 and the third terminal 67 increases the number of terminal pins, thereby improving the current carrying and heat conducting capacity;

[0129] (4) The symmetrical and dispersed design of the high-voltage side of the liner helps to disperse the heat dissipation of the chips in parallel, and the first terminal 65 and the third terminal 67 increase the terminal pin coordination, thereby improving the symmetry of the overall structural circuit.

[0130] This embodiment adopts a standardized 62mm module housing and base plate, develops a lining layout, and uses copper metal interconnection sheets on the power side for electrical interconnection, which solves the problems of high-temperature resistant applications of large current (greater than or equal to 400A) and insufficient current-carrying and thermal conductivity on the power side, greatly improves the reliability of the power module, and can realize the application of the power module under high-current and high-temperature conditions. Specifically, this embodiment increases the current-carrying and thermal conductivity of the power module, solves the problem that traditional power aluminum wires and terminal welding cannot meet the high-current and high-temperature resistance of the module. Compared with the currently commercially available 62mm power modules, the thermal resistance of the power module of this embodiment is greatly reduced, and the rated current of the power module is increased to more than 800A, which greatly improves the power density of the module. At the same time, through simulation experiments, it is known that this solution has lower parasitic parameters, which helps to reduce energy loss during module operation.

[0131] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0132] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0133] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0134] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0135] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0136] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A power module, characterized in that: The power module comprises a liner (10) and a chip (20); a first conductive structure (11) and a second conductive structure (12) are arranged on the liner (10); the first conductive structure (11) and the second conductive structure (12) are both axisymmetric structures; the axes of symmetry of the first conductive structure (11) and the second conductive structure (12) extend along the length direction of the power module; the first conductive structure (11) and the second conductive structure (12) in the same power module are arranged at intervals along the length direction of the power module; and the chip (20) is arranged on both the first conductive structure (11) and the second conductive structure (12); The power module further comprises a sheet-shaped first interconnecting sheet (30) and a second interconnecting sheet (40); the upper surface of the chip (20) is conductively connected to the first conductive structure (11) and / or the second conductive structure (12) via the first interconnecting sheet (30); and the first conductive structure (11) is conductively connected to the second conductive structure (12) via the second interconnecting sheet (40).

2. The power module according to claim 1, characterized in that: The width of the first interconnecting sheet (30) is between 1.5 mm and 3.0 mm.

3. The power module according to claim 1, characterized in that: The width of the second interconnecting sheet (40) is between 1.5 mm and 4.0 mm.

4. The power module according to claim 1, characterized in that: The ratio of the width dimension of the first interconnection sheet (30) to the width dimension of the chip (20) is between 0.3 and 0.

6.

5. The power module according to claim 1, characterized in that: A portion of the first interconnection sheet (30) in contact with the upper surface of the chip (20) is provided with a wetting groove (34); and / or, A portion of the first interconnection sheet (30) in contact with the upper surface of the first conductive structure (11) and / or the second conductive structure (12) is provided with a wetting groove (34).

6. The power module according to claim 1, characterized in that: A plurality of the chips (20) are disposed on both the first conductive structure (11) and the second conductive structure (12), and the plurality of the chips (20) on the first conductive structure (11) and the plurality of the chips (20) on the second conductive structure (12) are symmetrically arranged on both sides of the symmetry axis; On the first conductive structure (11), two ends of the first interconnection sheet (30) are respectively conductively connected to the upper surfaces of two symmetrically arranged chips (20), and a middle portion of the first interconnection sheet (30) is conductively connected to the first conductive structure (11); On the second conductive structure (12), two ends of the first interconnection sheet (30) are respectively conductively connected to the upper surfaces of two symmetrically arranged chips (20), and a middle portion of the first interconnection sheet (30) is conductively connected to the second conductive structure (12).

7. The power module according to claim 6, characterized in that: The first interconnection sheet (30) comprises: a main body segment (31), wherein a lower surface of the main body segment (31) is conductively connected to the first conductive structure (11) or the second conductive structure (12); a first interface interconnection section (32), located at a side of the main body section (31) and connected to the main body section (31), wherein a lower surface of the first interface interconnection section (32) is conductively connected to an upper surface of one of the two symmetrically arranged chips (20); The second interface interconnection section (33) is located at the side of the main body section (31) and is connected to the main body section (31), and the lower surface of the second interface interconnection section (33) is conductively connected to the upper surface of another chip (20) of the two symmetrically arranged chips (20).

8. The power module according to claim 7, characterized in that: The first interconnection sheet (30) further comprises a first connection section (35), the first connection section (35) being located at a side of the main body section (31), two ends of the first connection section (35) being respectively connected to the main body section (31) and the first interface interconnection section (32), and a lower surface of the first connection section (35) being higher than a lower surface of the main body section (31) and / or a lower surface of the first interface interconnection section (32); The first interconnecting sheet (30) further comprises a second connecting section (36), the second connecting section (36) being located at a side of the main section (31), the two ends of the second connecting section (36) being respectively connected to the main section (31) and the second interface interconnecting section (33), and the lower surface of the second connecting section (36) being higher than the lower surface of the main section (31) and / or the lower surface of the second interface interconnecting section (33).

9. The power module according to claim 8, characterized in that: The first interface interconnection section (32), the second interface interconnection section (33) and the main body section (31) are all flat plate structures; The first connecting section (35) and / or the second connecting section (36) are both arched plate structures.

10. The power module according to claim 1, characterized in that: The second interconnection sheet (40) comprises: a third interface interconnection segment (41), the lower surface of the third interface interconnection segment (41) being conductively connected to the second conductive structure (12); a fourth interface interconnection segment (42), the lower surface of the fourth interface interconnection segment (42) being conductively connected to the first conductive structure (11); A third connecting section (43), wherein two ends of the third connecting section (43) are respectively connected to the third interface interconnection section (41) and the fourth interface interconnection section (42), and a lower surface of the third connecting section (43) is higher than a lower surface of the third interface interconnection section (41) and / or a lower surface of the fourth interface interconnection section (42).

11. The power module according to claim 10, characterized in that: The third interface interconnection section (41) and the fourth interface interconnection section (42) are both flat plate structures; The third connecting section (43) is an arched plate structure.

12. The power module according to any one of claims 1 to 11, characterized in that: The first conductive structure (11) comprises a first sub-conductive layer (111) and two second sub-conductive layers (112); the first sub-conductive layer (111) and the second sub-conductive layer (112) are arranged at intervals; the axis of the first sub-conductive layer (111) is coaxial with the symmetry axis; the two second sub-conductive layers (112) are respectively located on both sides of the first sub-conductive layer (111) in the width direction of the power module; the two second sub-conductive layers (112) are each provided with the chip (20); the upper surfaces of the chips (20) on the two second sub-conductive layers (112) are conductively connected to the first sub-conductive layer (111) via the first interconnection sheet (30); and the first sub-conductive layer (111) is conductively connected to the second conductive structure (12) via the second interconnection sheet (40).

13. The power module according to claim 12, characterized in that: The second conductive structure (12) comprises a third sub-conductive layer (121) and a fourth sub-conductive layer (122); the third sub-conductive layer (121) has a notch (1211) at one end facing the first sub-conductive layer (111) in the length direction of the power module; the fourth sub-conductive layer (122) extends into the notch (1211); the axis of the fourth sub-conductive layer (122) is coaxial with the symmetry axis; the third sub-conductive layer (121) is provided with the chip (20) at positions on both sides of the notch (1211) in the width direction of the power module; the first sub-conductive layer (111) is conductively connected to the third sub-conductive layer (121) via the second interconnection sheet (40); and the upper surface of the chip (20) on the third sub-conductive layer (121) is conductively connected to the fourth sub-conductive layer (122) via the first interconnection sheet (30).

14. The power module according to any one of claims 1 to 11, characterized in that: The power module further comprises a control component (50), wherein the control component (50) comprises a mounting substrate (51) and a resistance element (52) arranged on the mounting substrate (51); A mounting position is provided on the surface of the first conductive structure (11) and / or the second conductive structure (12); one surface of the mounting substrate (51) in the thickness direction thereof is connected to the mounting position; and the resistor element (52) is located on another surface of the mounting substrate (51) in the thickness direction thereof.

15. A power device, characterized in that: The power device comprises the power module according to any one of claims 1 to 14.

16. The power device according to claim 15, characterized in that: The power device comprises two power modules (70), and the two power modules (70) are arranged at intervals and symmetrically in a width direction of the power module (70).

17. The power device according to claim 15, characterized in that: The power device further comprises a power terminal (60), the power terminal (60) being a plate-shaped structure, the power terminal (60) comprising a terminal foot plate section (61), a first plate section (62), a second plate section (63) and a lead-out plate section (64) connected in sequence, the terminal foot plate section (61) and the second plate section (63) being arranged at an angle to the first plate section (62), the terminal foot plate section (61) and the second plate section (63) extending in opposite directions, and the lead-out plate section (64) being arranged at an end of the second plate section (63) away from the first plate section (62).

18. The power device according to claim 17, characterized in that: The power terminal (60) comprises a first terminal (65), a second terminal (66) and a third terminal (67), wherein the number of terminal foot sections (61) of the first terminal (65) and the number of terminal foot sections (61) of the third terminal (67) are both greater than the number of terminal foot sections (61) of the second terminal (66).

Images