Power Devices

Abstract

The present invention provides a power device, including: a power unit, a first power terminal and a second power terminal; the power unit includes: a bottom plate having a first conductive layer and a second conductive layer spaced apart in a first preset direction, the first conductive layer and the second conductive layer being conductively connected; a chip being arranged on the first conductive layer, the first side of the chip being connected to the first conductive layer, and the second side of the chip being connected to the third conductive layer; an insulating layer being arranged on the first conductive layer; a control unit being connected to the chip, the control unit being arranged on a surface of the insulating layer away from the first conductive layer, the chip and the second conductive layer being located on both sides of the control unit; and a first diode being arranged on the second conductive layer. The technical solution of the present application effectively solves the problem of poor heat dissipation effect of power devices in the related art.

Description

Technical Field

[0001] The present invention relates to the technical field of power devices, and in particular to a power device. Background Art

[0002] A power device generally includes an insulating base plate, a chip, an anti-parallel diode, a current input terminal and a current output terminal. The chip and the anti-parallel diode are arranged adjacent to each other, and the current input terminal board and the current output terminal board are located on the same side of the chip and the diode. This facilitates the connection between the current input terminal and the current input terminal board, and also facilitates the connection between the current output terminal and the current output terminal board.

[0003] In the related art, a conductive plate for mounting a chip, a conductive plate for mounting an anti-parallel diode, and a conductive plate for mounting a control structure are provided on an insulating base plate, and the control structure is connected to the gate of the chip. Since the conductive plate for mounting the control structure is provided, it will occupy the area of ​​the insulating base plate, resulting in a reduction in the area of ​​the conductive plate for mounting the chip and the area of ​​the conductive plate for mounting the anti-parallel diode, which affects the heat dissipation of the chip. Summary of the invention

[0004] The main purpose of the present invention is to provide a power device to solve the problem of poor heat dissipation effect of the power device in the related art.

[0005] To achieve the above-mentioned purpose, according to one aspect of the present invention, there is provided a power device, comprising: a power unit, the power unit comprising: a base plate, the base plate having a first conductive layer and a second conductive layer spaced apart along a first preset direction, the first conductive layer being conductively connected to the second conductive layer; a chip, arranged on the first conductive layer, the first side of the chip being connected to the first conductive layer; an insulating layer, arranged on the first conductive layer; a control unit, connected to the chip, the control unit being arranged on a surface of the insulating layer away from the first conductive layer; and a first diode, arranged on the second conductive layer.

[0006] Furthermore, the insulating layer includes a ceramic board, and the control unit includes a PCB board.

[0007] Further, the first diode includes a plurality of first diodes arranged at intervals, the power unit also includes a fourth conductive layer and a fifth conductive layer, some of the plurality of first diodes are connected to the fourth conductive layer, another part of the plurality of first diodes is connected to the fifth conductive layer, and the fourth conductive layer, the second conductive layer and the fifth conductive layer are arranged at intervals in a second preset direction.

[0008] Furthermore, the power unit also includes a third conductive layer, the second side of the chip is connected to the third conductive layer, and the power device also includes a first power terminal and a second power terminal, wherein the first power terminal is conductively connected to the third conductive layer, and the second power terminal is conductively connected to the second conductive layer.

[0009] Furthermore, the power device also includes a mounting plate, a plurality of power units, and the plurality of power units are arranged on the mounting plate at intervals. The plurality of power units include a first power unit and a second power unit. The first power terminal is connected to both the first power unit and the second power unit, and the second power terminal is connected to both the first power unit and the second power unit.

[0010] Further, the first power unit and the second power unit are arranged at intervals in a first preset direction, and the second conductive layer of the first power unit and the second conductive layer of the second power unit are arranged adjacent to each other.

[0011] Furthermore, the first power terminal includes a main body plate, a first branch plate and a second branch plate, the first end of the first branch plate is connected to the main body plate, the second end of the first branch plate is connected to the third conductive layer of the first power unit, the first end of the second branch plate is connected to the main body plate, and the second end of the second branch plate is connected to the third conductive layer of the second power unit.

[0012] Furthermore, the first branch plate is folded back and has an overlapping section which is overlapped with the main body plate.

[0013] Furthermore, the first branch plate includes a first connecting section arranged on a side of the main plate facing the mounting plate, a first end of the first connecting section is connected to the overlapping section and to a side of the main plate away from the first power unit in a first preset direction, and a second end of the first connecting section is connected to the third conductive layer of the first power unit.

[0014] Furthermore, the first power terminal also includes a third branch plate and a fourth branch plate, the first end of the third branch plate is connected to the main plate, the second end of the third branch plate is connected to the second conductive layer of the first power unit, the first end of the fourth branch plate is connected to the main plate, and the second end of the fourth branch plate is connected to the second conductive layer of the second power unit.

[0015] Further, the distance between the second branch plate and the fourth branch plate is smaller than the distance between the first branch plate and the third branch plate, the second branch plate is located between the first branch plate and the third branch plate, and the fourth branch plate is located between the first branch plate and the third branch plate.

[0016] Furthermore, the power unit also includes a second diode, which is arranged on the first conductive layer, and a side of the second diode away from the first conductive layer is connected to the second conductive layer, and the chip and the second diode are located on both sides of the insulating layer.

[0017] Furthermore, the chip and the second conductive layer are located on both sides of the control part.

[0018] Furthermore, the first conductive layer includes a first conductive plate and a second conductive plate connected to the first conductive plate, the insulating layer is arranged on the first conductive plate, the second diode is arranged on the second conductive plate, and the third conductive layer, the first conductive plate and the second conductive plate are arranged at intervals in the first preset direction.

[0019] Furthermore, an avoidance gap is provided on the second conductive layer, and the second conductive plate is located in the avoidance gap.

[0020] Furthermore, the second conductive layer includes a third conductive plate, the avoidance gap is arranged on a side of the third conductive plate facing the third conductive layer, and the plurality of first diodes are arranged at intervals on both sides of the avoidance gap.

[0021] Further, part of the first diode connected to the fourth conductive layer is located between the avoidance gap and the fourth conductive layer, and part of the first diode connected to the fifth conductive layer is located between the avoidance gap and the fifth conductive layer.

[0022] Applying the technical solution of the present invention, the power device includes a power unit, and the power unit includes a base plate, a chip, an insulating layer, a control unit and a first diode. The first conductive layer and the second conductive layer are arranged on the base plate at intervals along a first preset direction, and the first conductive layer is conductively connected to the second conductive layer. A chip and an insulating layer are arranged on the first conductive layer, and the first side of the chip is connected to the first conductive layer. The control unit is connected to the chip, and the control unit is arranged on the surface of the insulating layer away from the second conductive part. The first diode is arranged on the second conductive layer. Through the above arrangement, current can flow between the chip, the first conductive layer and the second conductive layer. The insulating layer is arranged on the first conductive layer, so that the first conductive layer can have a larger area, that is, the first conductive layer can have a larger contact area with the base plate, so that the heat generated by the chip during operation can be dissipated in time, thereby improving the heat dissipation capacity of the power unit, and then improving the heat dissipation capacity of the power device. Therefore, the technical solution of the present application effectively solves the problem of poor heat dissipation effect of power devices in the related art. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0024] Figure 1 A schematic diagram of the three-dimensional structure of an embodiment of a power device according to the present invention is shown;

[0025] Figure 2 Shows Figure 1 Schematic diagram of the decomposed structure of the power device;

[0026] Figure 3 Shows Figure 1A schematic diagram of a three-dimensional structure in which a first power unit, a second power unit, a first power terminal and a second power terminal of a power device are connected;

[0027] Figure 4 Shows Figure 3 A cross-sectional schematic diagram of a power device;

[0028] Figure 5 Shows Figure 1 A schematic diagram of the three-dimensional structure of a power unit of a power device;

[0029] Figure 6 Shows Figure 5 A schematic top view of a power unit;

[0030] Figure 7 Shows Figure 1 A schematic diagram of a three-dimensional structure of a first power terminal of a power device;

[0031] Figure 8 Shows Figure 3 A schematic diagram of a three-dimensional structure in which a first power unit, a second power unit and a second power terminal of a power device are connected;

[0032] Fig. 9 Shows Figure 8 A schematic diagram of a three-dimensional structure of a second power terminal of a power device;

[0033] Fig.10 Shows Figure 3 A cross-sectional schematic diagram of the connection between a first power unit, a second power unit and a first power terminal of a power device;

[0034] Fig.11 Shows Figure 1 The circuit schematic diagram of the power unit of the power device;

[0035] Fig.12 Shows Figure 3 A side view schematic diagram of a power device;

[0036] Fig.13 Shows Figure 3 A schematic top view of a power device;

[0037] Fig.14 Shows Figure 1 Temperature test simulation diagram of the power unit of the power device.

[0038] The above drawings include the following reference numerals:

[0039] 100, power unit; 101, first power unit; 102, second power unit; 110, bottom plate; 111, third conductive layer; 112, first conductive layer; 1121, first conductive plate; 1122, second conductive plate; 113, second conductive layer; 1131, avoidance gap; 1132, third conductive plate; 120, chip; 130, insulating layer; 140, control unit; 150, first diode; 160, fourth conductive layer; 170, fifth conductive layer; 180, second diode; 200, first power terminal; 210, main plate; 220, first branch plate; 2205, overlapping section; 221, first connecting section; 222, second connecting section; 223, third connecting section; 224, fourth connecting section; 2 30. The second branch plate; 231. The fifth connecting section; 232. The sixth connecting section; 233. The seventh connecting section; 234. The eighth connecting section; 240. The third branch plate; 250. The fourth branch plate; 260. The fifth branch plate; 261. The ninth connecting section; 262. The tenth connecting section; 270. The sixth branch plate; 280. The seventh branch plate; 290. The eighth branch plate; 2010. The lead plate; 2011. The eleventh connecting section; 2012. The twelfth connecting section; 300. The second power terminal; 3005. The plate body; 301. The ninth branch plate; 302. The tenth branch plate; 303. The eleventh branch plate; 304. The twelfth branch plate; 305. The thirteenth branch plate; 306. The fourteenth branch plate; 400. The mounting plate. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0042] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to actual proportional relationships. The technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0043] like Figure 1 , Figure 2 , Figure 5 , Fig.11 as well as Fig.13 As shown, the power device of this embodiment includes: a power unit 100, a first power terminal 200 and a second power terminal 300. The power unit 100 includes a base plate 110, a chip 120, an insulating layer 130, a control unit 140 and a first diode 150. The base plate 110 has a third conductive layer 111, a first conductive layer 112 and a second conductive layer 113, the third conductive layer 111, the first conductive layer 112 and the second conductive layer 113 are arranged in a first preset direction, and the first conductive layer 112 is conductively connected to the second conductive layer 113. The chip 120 is arranged on the first conductive layer 112, the first side of the chip 120 is connected to the first conductive layer 112, and the second side of the chip 120 is connected to the third conductive layer 111. The insulating layer 130 is arranged on the first conductive layer 112. The control unit 140 is connected to the chip 120. The control unit 140 is disposed on a surface of the insulating layer 130 away from the first conductive layer 112. The chip 120 and the second conductive layer 113 are located on both sides of the control unit 140. The first diode 150 is disposed on the second conductive layer 113. The first power terminal 200 is conductively connected to the third conductive layer 111, and the second power terminal 300 is conductively connected to the second conductive layer.

[0044] Applying the technical solution of this embodiment, the power device includes a power unit 100, and the power unit 100 includes a base plate 110, a chip 120, an insulating layer 130, a control unit 140 and a first diode 150. The first conductive layer 112 and the second conductive layer 113 are arranged on the base plate 110 at intervals along a first preset direction, and the first conductive layer 112 is conductively connected to the second conductive layer 113. The chip 120 and the insulating layer 130 are arranged on the first conductive layer 112, and the first side of the chip 120 is connected to the first conductive layer 112. The control unit 140 is connected to the chip 120, and the control unit 140 is arranged on the surface of the insulating layer 130 away from the first conductive layer 112. The first diode 150 is arranged on the second conductive layer 113. Through the above arrangement, current can flow between the chip 120, the first conductive layer 112 and the second conductive layer 113. The insulating layer 130 is disposed on the first conductive layer 112, so that the first conductive layer 112 can have a larger area, that is, the first conductive layer 112 can have a larger contact area with the base plate 110, so that the heat generated by the chip 120 during operation can be dissipated in time, thereby improving the heat dissipation capacity of the power unit, and further improving the heat dissipation capacity of the power device. Therefore, the technical solution of this embodiment effectively solves the problem of poor heat dissipation effect of the power device in the related art.

[0045] It should be noted that the power device of this embodiment is a single-tube structure.

[0046] The insulating layer 130 may also be located between the chip 120 and the first diode 150. Of course, the chip 120 may be located between the insulating layer 130 and the first diode 150. In this embodiment, the insulating layer 130 may also be located between the chip 120 and the first diode 150.

[0047] The third conductive layer 111 includes a first terminal conductive plate, and the second conductive layer 113 includes a second terminal conductive plate. The drain of the chip 120 is arranged on the first side of the chip 120, and the drain of the chip 120 is connected to the first conductive layer 112. The source of the chip 120 is arranged on the second side of the chip 120, and the source of the chip 120 is connected to the third conductive layer 111. The control unit 140 is connected to the gate of the chip 120. The function of the first diode 150 is to provide a path for the current flowing through the power unit in the reverse direction.

[0048] The first side of the chip 120 is provided with a drain of the chip 120 , and the drain of the chip 120 is connected to the first conductive layer 112 . The second side of the chip 120 is provided with a source of the chip 120 , and the source of the chip 120 is conductively connected to the third conductive layer 111 .

[0049] like Figure 5 and Figure 6As shown, in this embodiment, the insulating layer 130 includes a ceramic board, and the control unit 140 includes a PCB board. The ceramic board can ensure the insulation between the control unit 140 and the first conductive layer 112, and avoid direct conduction between the control unit 140 and the first conductive layer 112. The PCB board can be connected to the gate of the chip 120, thereby controlling whether the chip 120 is running.

[0050] The material of the insulating layer 130 may also be other materials with insulating properties.

[0051] like Figure 5 and Figure 6 As shown, in this embodiment, the first diode 150 includes a plurality of first diodes 150 arranged at intervals, the power unit 100 further includes a fourth conductive layer 160 and a fifth conductive layer 170, a portion of the plurality of first diodes 150 is connected to the fourth conductive layer 160, another portion of the plurality of first diodes 150 is connected to the fifth conductive layer 170, and the fourth conductive layer 160, the second conductive layer 113 and the fifth conductive layer 170 are arranged at intervals in the second preset direction. The plurality of first diodes 150 are arranged and the plurality of first diodes 150 are connected in parallel, which can reduce the current passing through each first diode 150. By arranging the fourth conductive layer 160 and the fifth conductive layer 170, it is convenient for a portion of the plurality of first diodes 150 to be connected to the fourth conductive layer 160, and another portion of the plurality of first diodes 150 to be connected to the fifth conductive layer 170, that is, it is easier to connect the plurality of first diodes 150. The fourth conductive layer 160 , the second conductive layer 113 and the fifth conductive layer 170 are arranged at intervals in the second preset direction, thereby avoiding the fourth conductive layer 160 and the second conductive layer 113 being arranged at intervals in the first preset direction, resulting in a larger size of the power unit.

[0052] The chip 120 includes a plurality of chips, and the plurality of chips 120 are arranged on the first conductive layer 112 at intervals along a second preset direction.

[0053] The fourth conductive layer 160 includes a third terminal conductive plate. The fifth conductive layer 170 includes a fourth terminal conductive plate. The cathodes of the plurality of first diodes 150 are all connected to the second conductive layer 113, the anodes of some of the first diodes 150 are connected to the fourth conductive layer 160, and the anodes of some of the first diodes 150 are connected to the fifth conductive layer 170.

[0054] It should be noted that when the current flows through the power unit in the forward direction, the current flows in from the second power terminal 300 and flows out through the first power terminal 200. The function of the first diode 150 is to provide a path for the current flowing through the power unit in the reverse direction, wherein the current flowing through the power unit in the reverse direction means that the current flows in from the first power terminal 200 and flows out through the second power terminal 300.

[0055] The insulating layer 130 may also be arranged in a second preset direction with the chips 120 spaced apart, located at the outermost side of the chips 120, or between any two chips 120. The insulating layer 130 may be arranged obliquely, that is, the insulating layer 130 and the third conductive layer 111 have an angle therebetween.

[0056] like Figure 3 , Figure 5 as well as Figure 6 As shown, in this embodiment, the power unit further includes a third conductive layer 111, the second side of the chip 120 is connected to the third conductive layer 111, and the power device further includes a first power terminal 200 and a second power terminal 300, wherein the first power terminal 200 is conductively connected to the third conductive layer 111, and the second power terminal 300 is conductively connected to the second conductive layer 113. Through the above arrangement, current can flow between the first power terminal 200, the third conductive layer 111, the chip 120, the first conductive layer 112, the second conductive layer 113 and the second power terminal 300.

[0057] like Figure 2 As shown, in this embodiment, the power device further includes a mounting plate 400, there are multiple power units 100, the multiple power units 100 are arranged on the mounting plate 400 at intervals, the multiple power units 100 include a first power unit 101 and a second power unit 102, the first power terminal 200 is connected to both the first power unit 101 and the second power unit 102, and the second power terminal 300 is connected to both the first power unit 101 and the second power unit 102. Through the above arrangement, the mounting plate 400 can support multiple power units 100, the first power terminal 200 can be connected to both the first power unit 101 and the second power unit 102, and the second power terminal 300 can be connected to both the first power unit 101 and the second power unit 102, so as to realize the parallel connection of the first power unit 101 and the second power unit 102, thereby enabling the power device to pass a larger current.

[0058] like Figure 3As shown, in this embodiment, the first power unit 101 and the second power unit 102 are arranged at intervals in the first preset direction, and the second conductive layer 113 of the first power unit 101 and the second conductive layer 113 of the second power unit 102 are arranged adjacent to each other. Through the above arrangement, the second conductive layer 113 of the first power unit 101 and the second conductive layer 113 of the second power unit 102 are arranged adjacent to each other, which facilitates the connection between the first power terminal 200 and the second conductive layer 113 of the first power unit 101 and the second conductive layer 113 of the second power unit 102. Since the third conductive layer 111, the first conductive layer 112 and the second conductive layer 113 are arranged at intervals along the first preset direction, the above arrangement also makes the structure of the first power terminal 200 and the structure of the second power terminal 300 more reasonable, avoiding the first power terminal 200 and the second power terminal 300 from being crowded in a small space, which affects the heat dissipation of the power device.

[0059] like Figure 3 , Figure 4 as well as Figure 7 As shown, in this embodiment, the first power terminal 200 includes a main plate 210, a first branch plate 220 and a second branch plate 230. The first end of the first branch plate 220 is connected to the main plate 210, and the second end of the first branch plate 220 is connected to the third conductive layer 111 of the first power unit 101. The first end of the second branch plate 230 is connected to the main plate 210, and the second end of the second branch plate 230 is connected to the third conductive layer 111 of the second power unit 102. The main plate 210 can support the first branch plate 220 and the second branch plate 230. The second end of the first branch plate 220 is connected to the third conductive layer 111 of the first power unit 101, and the second end of the second branch plate 230 is connected to the second conductive layer 113 of the second power unit 102, so that under the action of the first branch plate 220, the first power unit 101 can be connected to the main plate 210, and under the action of the second branch plate 230, the second power unit 102 can be connected to the main plate 210.

[0060] like Figure 7 As shown, in this embodiment, the first branch plate 220 is folded back and has an overlapping section 2205 that overlaps the main plate 210. The above arrangement makes it easier to shape the first branch plate 220.

[0061] like Figure 7As shown, in this embodiment, the first branch plate 220 includes a first connection section 221 disposed on a side of the main plate 210 facing the mounting plate 400, a first end of the first connection section 221 is connected to the overlapping section 2205 and connected to a side of the main plate 210 away from the first power unit 101 in the first preset direction, and a second end of the first connection section 221 is connected to the third conductive layer 111 of the first power unit 101. The first connection section 221 can be connected to the main plate 210 through the overlapping section 2205. The first connection section 221 can connect the third conductive layer 111 of the first power unit 101 and the main plate 210. The first connection section 221 is disposed on a side of the main plate 210 facing the mounting plate 400, so that the first branch plate 220 can be more easily formed.

[0062] It should be noted that the main plate 210 is connected to a side away from the first power unit 101 in the first preset direction as the first side of the main plate 210, and the first end of the first branch plate 220 and the first end of the second branch plate 230 are both connected to the first side of the main plate 210, which makes it easier to form the main plate 210, the first branch plate 220 and the second branch plate 230.

[0063] like Figure 7 As shown, in this embodiment, the first power terminal 200 further includes a third branch plate 240 and a fourth branch plate 250, wherein a first end of the third branch plate 240 is connected to the main plate 210, a second end of the third branch plate 240 is connected to the second conductive layer 113 of the first power unit 101, a first end of the fourth branch plate 250 is connected to the main plate 210, and a second end of the fourth branch plate 250 is connected to the second conductive layer 113 of the second power unit 102. The third branch plate 240 can connect the main plate 210 to the second conductive layer 113 of the first power unit 101, and the fourth branch plate 250 can connect the main plate 210 to the second conductive layer 113 of the second power unit 102, so that current can flow between the fourth conductive layer 160 of the first power unit 101 and the main plate 210, and also between the fourth conductive layer 160 of the second power unit 102 and the main plate 210.

[0064] The first branch plate 220 and the third branch plate 240 are symmetrically arranged in the first preset direction, and the second branch plate 230 and the fourth branch plate 250 are symmetrically arranged in the first preset direction. The first branch plate 220 and the third branch plate 240 have the same structure and are symmetrically arranged in the second preset direction. The second branch plate 230 and the fourth branch plate 250 have the same structure and are symmetrically arranged in the second preset direction.

[0065] like Figure 7 and Fig.10As shown, in this embodiment, the distance between the second branch plate 230 and the fourth branch plate 250 is smaller than the distance between the first branch plate 220 and the third branch plate 240, the second branch plate 230 is located between the first branch plate 220 and the third branch plate 240, and the fourth branch plate 250 is located between the first branch plate 220 and the third branch plate 240. Through the above arrangement, the first branch plate 220, the second branch plate 230, the third branch plate 240 and the fourth branch plate 250 are easily manufactured and formed, and less material can be used when manufacturing the first power terminal 200.

[0066] Specifically, the second branch plate 230 is located between a plane where a side of the first branch plate 220 facing the third branch plate 240 is located and a plane where a side of the third branch plate 240 facing the first branch plate 220 is located.

[0067] like Figure 5 and Figure 6 As shown, in this embodiment, the power unit 100 further includes a second diode 180, which is disposed on the first conductive layer 112, and the second diode 180 is connected to the second conductive layer 113 on a side away from the first conductive layer 112, and the chip 120 and the second diode 180 are located on both sides of the insulating layer 130. The second diode 180 can prevent the chip 120 from flowing through a reverse current. The second diode 180 is connected between the first conductive layer 112 and the second conductive layer 113, so that the chip 120 can be connected to the second conductive layer 113 through the first conductive layer 112 and the second diode 180.

[0068] Connecting a silicon diode (i.e., the second diode 180) in series in the silicon carbide MOSFET chip circuit can improve the mutual compatibility of the silicon carbide MOSFET chip (i.e., chip 120) and the anti-parallel diode chip (i.e., the first diode 150). Even if the conduction voltage of the anti-parallel diode chip (i.e., the first diode 150) is greater than the conduction voltage of the silicon carbide MOSFET chip body diode, the power unit can still ensure that the reverse current only flows through the anti-parallel diode chip, thereby alleviating the degradation of the MOSFET chip.

[0069] The control unit 140 is located between the plurality of chips 120 and the second diode 180 .

[0070] like Figure 5As shown, in this embodiment, the chip 120 and the second conductive layer 113 are located on both sides of the control unit 140. The insulating layer 130 is disposed on the first conductive layer 112, and the chip 120 and the second conductive layer 113 are located on both sides of the control unit 140. The control unit 140 is disposed on the surface of the insulating layer 130 away from the first conductive layer, that is, the control unit 140 is disposed on both sides of the chip 120 and the second conductive layer 113, so that the insulating layer 130 and the control unit 140 can separate the chip 120 and the first diode 150, thereby allowing the heat generated when the chip 120 is running and the heat generated when the first diode 150 is running to be dissipated in time, so that the power device has a better heat dissipation capability.

[0071] like Figure 6 As shown, in this embodiment, the first conductive layer 112 includes a first conductive plate 1121 and a second conductive plate 1122 connected to the first conductive plate 1121, the insulating layer 130 is arranged on the first conductive plate 1121, the second diode 180 is arranged on the second conductive plate 1122, and the third conductive layer 111, the first conductive plate 1121 and the second conductive plate 1122 are arranged at intervals in the first preset direction. The first conductive plate 1121 can support the insulating layer 130 and the chip 120, and also make the first conductive plate 1121 and the base plate 110 have a larger contact area, ensuring that the heat generated by the chip 120 during operation is dissipated in time. The insulating layer 130 can separate the second diode 180 from the chip 120, avoiding the accumulation of heat generated by the second diode 180 during operation and the heat generated by the chip 120 during operation.

[0072] like Figure 6 As shown, in this embodiment, the second conductive layer 113 is provided with an avoidance gap 1131, and the second conductive plate 1122 is located in the avoidance gap 1131. The above arrangement makes the structure between the first conductive layer 112 and the second conductive layer 113 more compact, thereby making the overall structure of the power device more compact.

[0073] like Figure 6 As shown, in this embodiment, the second conductive layer 113 includes a third conductive plate 1132, the avoidance gap 1131 is arranged on the side of the third conductive plate 1132 facing the third conductive layer 111, and the plurality of first diodes 150 are arranged at intervals on both sides of the avoidance gap 1131. The above arrangement enables the plurality of first diodes 150 to be more dispersed, thereby enabling the heat generated by the plurality of first diodes 150 during operation to be dissipated in time.

[0074] like Figure 6As shown, the spacing between the side of the first conductive plate 1121 facing the third conductive plate 1132 and the side of the third conductive plate 1132 facing the first conductive plate 1121 is between 0.5 mm and 1.5 mm, specifically, it can be 0.2 mm, 0.4 mm, 0.51 mm, 0.6 mm, 0.8, 1 mm or 1.5 mm, so that the insulation effect between the first conductive layer 112 and the second conductive layer 113 is better and space can be saved.

[0075] like Figure 6 As shown, the interval between the second conductive plate 1122 and the avoidance gap 1131 is between 0.5 mm and 1.5 mm, specifically, it can be 0.2 mm, 0.4 mm, 0.51 mm, 0.6 mm, 0.8, 1 mm or 1.5 mm, so that the insulation effect between the first conductive layer 112 and the second conductive layer 113 is better and space can be saved.

[0076] The ratio of the area of ​​the third conductive layer 111 to the area of ​​the second conductive layer 113 is between 0.45 and 0.55, so that the arrangement of the third conductive layer 111 and the second conductive layer 113 is more reasonable, the chip 120 and the bonding wires can be properly placed, and less space can be occupied.

[0077] like Figure 6 As shown, in this embodiment, part of the first diodes 150 connected to the fourth conductive layer 160 is located between the avoidance gap 1131 and the fourth conductive layer 160, and part of the first diodes 150 connected to the fifth conductive layer 170 is located between the avoidance gap 1131 and the fifth conductive layer 170. Through the above arrangement, the connection method of the plurality of first diodes is more reasonable.

[0078] It should be noted that the portion of the first diode 150 disposed between the second diode 180 and the fourth conductive layer 160 includes at least one, and the portion of the first diode 150 disposed between the second diode 180 and the fifth conductive layer 170 includes at least one.

[0079] The first power terminal 200 further includes a fifth branch plate 260 and a sixth branch plate 270, wherein a first end of the fifth branch plate 260 is connected to a second side of the main plate 210, a second end of the fifth branch plate 260 is connected to a fourth conductive layer 160 of the first power unit 101, a first end of the sixth branch plate 270 is connected to a first side of the main plate 210, a second end of the sixth branch plate 270 is connected to a fifth conductive layer 170 of the first power unit 101, and the first side of the main plate 210 is arranged opposite to the second side of the main plate 210. The fifth branch plate 260 can connect the fourth conductive layer 160 of the first power unit 101 to the main plate 210, and the sixth branch plate 270 can connect the fifth conductive layer 170 of the first power unit 101 to the main plate 210, so as to realize the flow of current. The first end of the fifth branch plate 260 is connected to the second side of the main plate 210, the first end of the sixth branch plate 270 is connected to the first side of the main plate 210, and the first end of the first branch plate 220 and the first end of the second branch plate 230 are both connected to the first side of the main plate 210, and the first side of the main plate 210 is arranged opposite to the second side of the main plate 210, so that the position arrangement of the first branch plate 220, the second branch plate 230, the fifth branch plate 260 and the sixth branch plate 270 is more reasonable.

[0080] The main body plate 210 also has a third side and a fourth side, and the first side of the main body plate 210, the third side of the main body plate 210, the second side of the main body plate 210, and the fourth side of the main body plate 210 are sequentially arranged and connected to each other. The fourth side of the main body plate 210 is connected between the first side of the main body plate 210 and the second side of the main body plate 210.

[0081] like Figure 6 and Figure 8 As shown, in this embodiment, the first power terminal 200 further includes a seventh branch plate 280 and an eighth branch plate 290, the first end of the seventh branch plate 280 is connected to the second side of the main plate 210, the second end of the seventh branch plate 280 is connected to the fifth conductive layer 170 of the first power unit 101, the first end of the eighth branch plate 290 is connected to the first side of the main plate 210, and the second end of the eighth branch plate 290 is connected to the fifth conductive layer 170 of the second power unit 102. The seventh branch plate 280 can connect the fourth conductive layer 160 of the second power unit 102 to the main plate 210, and the eighth branch plate 290 can connect the fifth conductive layer 170 of the second power unit 102 to the main plate 210, so as to realize the flow of current.

[0082] like Figure 7 and Fig.10As shown, the first branch plate 220 also includes a second connecting segment 222, a third connecting segment 223 and a fourth connecting segment 224. The second connecting segment 222, the first connecting segment 221, the third connecting segment 223 and the fourth connecting segment 224 are connected to each other in sequence. The second connecting segment 222 extends from the main plate 210 to the bottom plate 110. The second connecting segment 222 is connected between the main plate 210 and the first connecting segment 221. The first connecting segment 221 extends from the second power unit 102 to the first power unit 101. The third connecting segment 223 extends from the main plate 210 to the bottom plate 110. The fourth connecting segment 224 is arranged on the third conductive layer 111 of the first power unit 101.

[0083] The second connection section 222 and the third connection section 223 both extend along a third preset direction, and the third preset direction, the first preset direction, and the second preset direction are arranged perpendicularly in pairs.

[0084] like Fig.13 As shown, the distance between the two side walls of the first connection section 221 in the second preset direction is the first distance, the distance between the two side walls of the third connection section 223 in the second preset direction is the second distance, and the distance between the two side walls of the fourth connection section 224 in the second preset direction is the third distance. The second distance is equal to the third distance, and the second distance is greater than the first distance. The value of the first distance is a, and the value of the second distance is b, that is, the value of the third distance is also b, and the value of b is greater than the value of a, so that when the value of a increases to be equal to the value of b, the width of the first branch plate 220 is larger, which in turn causes the stress on the first branch plate 220 to be larger and the vibration resistance to be weaker.

[0085] The side of the third connecting section 223 away from the third branch plate 240 protrudes from the side of the first connecting section 221 away from the third branch plate 240. Such a configuration can increase the cross-sectional area of ​​the current path, thereby reducing the parasitic inductance of the current path. The first branch plate 220 and the third branch plate 240 are symmetrically arranged, so that when designing the clamp used for bending and forming, the design is more convenient and more standardized. The first connecting section 221 is flush with the side of the third branch plate 240, the third connecting section 223 is flush with the side of the third branch plate 240, and the fourth connecting section 224 is flush with the side of the third branch plate 240.

[0086] The second branch plate 230 includes a fifth connecting segment 231, a sixth connecting segment 232, a seventh connecting segment 233 and an eighth connecting segment 234 which are connected to each other in sequence. The fifth connecting segment 231 extends in the direction from the main plate 210 to the bottom plate 110. The fifth connecting segment 231 is connected between the main plate 210 and the sixth connecting segment 232. The sixth connecting segment 232 extends in the direction from the first power unit 101 to the second power unit 102. The seventh connecting segment 233 extends in the direction from the main plate 210 to the bottom plate 110. The eighth connecting segment 234 is arranged on the third conductive layer 111 of the second power unit 102.

[0087] The fifth connecting segment 231 and the seventh connecting segment 233 both extend along the third preset direction.

[0088] The distance between the two side walls of the sixth connecting segment 232 in the second preset direction is the fourth distance, the distance between the two side walls of the seventh connecting segment 233 in the second preset direction is the fifth distance, and the distance between the two side walls of the eighth connecting segment 234 in the second preset direction is the sixth distance. The fifth distance is greater than the fourth distance, and the sixth distance is equal to the fifth distance. The value of the fourth distance is c, and the value of the fifth distance is d, that is, the value of d is greater than the value of c, and the value of the sixth distance is also d. This avoids the situation where when the value of c increases to be equal to the value of d, the width of the second connecting plate is larger, which in turn causes the stress on the second branch plate 230 to be larger and the vibration resistance to be weaker.

[0089] The side of the seventh connecting section 233 facing the fourth branch plate 250 protrudes from the side of the sixth connecting section 232 facing the fourth branch plate 250. Such a configuration can increase the cross-sectional area of ​​the current path, thereby reducing the parasitic inductance of the current path. The second branch plate 230 and the fifth branch plate 260 are symmetrically arranged, so that when designing the clamp used for bending and forming, the design is more convenient and more standardized. The side of the sixth connecting section 232 away from the fourth branch plate 250, the side of the seventh connecting section 233 away from the fourth branch plate 250, and the side of the eighth connecting section 234 away from the fourth branch plate 250 are arranged flush.

[0090] The protruding direction of the third connection segment 223 is different from the protruding direction of the seventh connection segment 233, which facilitates the manufacture of the first power terminal 200. Specifically, the overall structure of the first power terminal 200 is a flat plate structure at the beginning, and the overall three-dimensional structure of the first power terminal 200 is finally formed by bending the sheet metal. If the protruding direction of the third connection segment 223 is the same as the protruding direction of the seventh connection segment 233, after the first power terminal 200 is unfolded, the structures of the third connection segment 223 and the seventh connection segment 233 will have an overlapping area, resulting in the inability to manufacture the first power terminal 200.

[0091] The fifth branch plate 260 includes a ninth connecting segment 261 and a tenth connecting segment 262 . The ninth connecting segment 261 is connected between the main plate 210 and the tenth connecting segment 262 . The tenth connecting segment 262 is disposed on the fourth conductive layer 160 of the first power unit 101 .

[0092] The sixth branch plate 270 , the seventh branch plate 280 , and the eighth branch plate 290 all have the same structure as the fifth branch plate 260 .

[0093] A first opening groove is provided on the main plate 210, and the first opening groove is located between the first end of the first branch plate 220 and the first end of the second branch plate 230. The first opening groove is provided through the direction from the main plate 210 to the bottom plate 110, and the groove opening of the first opening groove is connected to the outer side of the main plate 210.

[0094] A second opening groove is also provided on the main plate 210, and the second opening groove is located between the first end of the third branch plate 240 and the first end of the fourth branch plate 250. The second opening groove is set through in the direction from the main plate 210 to the bottom plate 110, and the groove opening of the second opening groove is connected to the outer side of the main plate 210. The first opening groove and the second opening groove are symmetrically arranged in the first preset direction.

[0095] A third opening groove is also provided on the main plate 210, and the third opening groove is located between the first end of the first branch plate 220 and the first end of the seventh branch plate 280. The third opening groove is set through in the direction from the main plate 210 to the bottom plate 110, and the groove of the third opening groove is connected to the outer side of the main plate 210.

[0096] A fourth opening groove is also provided on the main plate 210, and the fourth opening groove is provided on the second side of the main plate 210 and is close to the first end of the fifth branch plate 260. The fourth opening groove and the third opening groove are symmetrically provided in the second preset direction. The fourth opening groove is provided through in the direction from the main plate 210 to the bottom plate 110, and the groove opening of the fourth opening groove is connected to the outer side of the main plate 210.

[0097] A fifth opening groove is also provided on the main plate 210, and the fifth opening groove is located between the first end of the second branch plate 230 and the first end of the eighth branch plate 290. The fifth opening groove is set through in the direction from the main plate 210 to the bottom plate 110, and the groove opening of the fifth opening groove is connected to the outer side of the main plate 210.

[0098] A sixth opening groove is also provided on the main plate 210, and the sixth opening groove is provided on the second side of the main plate 210 and close to the first end of the fourth branch plate. The sixth opening groove and the fifth opening groove are symmetrically provided in the second preset direction. The sixth opening groove is provided through in the direction from the main plate 210 to the bottom plate 110, and the groove opening of the sixth opening groove is connected to the outer side of the main plate 210.

[0099] The second side of the main plate 210 is also provided with a seventh opening groove, an eighth opening groove and a ninth opening groove in sequence, and the seventh opening groove, the eighth opening groove and the ninth opening groove are all arranged through in the direction from the main plate 210 to the bottom plate 110, and the slot openings of the seventh opening groove, the eighth opening groove and the ninth opening groove are all connected to the outer side of the main plate 210.

[0100] The lead-out board 2010 includes a first board segment, a second board segment, a third board segment, and a fourth board segment connected in sequence. The first board segment is connected to the second side of the main board 210 and extends from the bottom board 110 to the main board 210, the second board segment extends from the second power unit 102 to the first power unit 101, the third board segment extends from the bottom board 110 to the main board 210, and the fourth board segment extends from the bottom board 110 to the main board 210.

[0101] In the second preset direction, the distance between the side of the fourth plate segment close to the third branch plate 240 and the third branch plate 240 is the seventh distance, the distance between the side of the third plate segment close to the third branch plate 240 and the third branch plate 240 is the eighth distance, the distance between the side of the fourth plate segment away from the third branch plate 240 and the third branch plate 240 is the ninth distance, and the distance between the side of the third plate segment away from the third branch plate 240 and the third branch plate 240 is the tenth distance. The seventh distance is greater than the eighth distance. The ninth distance is greater than the tenth distance. This facilitates the connection between the first power terminal 200 and the external structure.

[0102] The distance between the two side walls of the first plate segment in the second preset direction, the distance between the two side walls of the second plate segment in the second preset direction, and the distance between the two side walls of the third plate segment in the second preset direction are equal. The side of the first plate segment close to the third branch plate 240 in the second preset direction, the side of the second plate segment close to the third branch plate 240 in the second preset direction, and the side of the third plate segment close to the third branch plate 240 in the second preset direction are located in the same plane.

[0103] The lead-out plate 2010 further includes an eleventh connecting segment 2011 and a twelfth connecting segment 2012 disposed on the first plate segment, and the eleventh connecting segment 2011 and the twelfth connecting segment 2012 are disposed at intervals. The eleventh connecting segment 2011 and the twelfth connecting segment 2012 are both connected to the second side of the main plate 210. In the second preset direction, the seventh opening slot, the eleventh connecting segment 2011, the twelfth connecting segment 2012 and the ninth opening slot are disposed at intervals in sequence.

[0104] The lead-out plate 2010 is further provided with a tenth opening slot, which is disposed between the eleventh connecting section 2011 and the twelfth connecting section 2012 , and is connected to the eighth opening slot.

[0105] The processing technology of the first power terminal 200 of this embodiment is as follows: the material between the second branch plate 230 and the fourth branch plate 250 is removed by a stamping process, the material between the first branch plate 220 and the second branch plate 230 is removed by a stamping process, the material between the third branch plate 240 and the fourth branch plate 250 is removed by a stamping process, the material between the sixth branch plate 270 and the first branch plate 220 is removed by a stamping process, the material between the third branch plate 240 and the eighth branch plate 290 is removed by a stamping process, the material between the fifth branch plate 260 and the lead plate 2010 is removed by a stamping process, and the material between the seventh branch plate 280 and the lead plate 2010 is removed by a stamping process. The lead plate 2010, the first branch plate 220, the second branch plate 230, the fifth branch plate 260, the sixth branch plate 270, the seventh branch plate 280, the eighth branch plate 290, the third branch plate 240 and the fourth branch plate 250 are obtained by a bending process.

[0106] like Figure 8 and Fig. 9 As shown, the second power terminal 300 includes a board body 3005 , a ninth branch board 301 and a tenth branch board 302 .

[0107] The first end of the ninth branch plate 301 is disposed on the first side of the plate body 3005, the first end of the tenth branch plate 302 is disposed on the second side of the plate body 3005, and the first side of the plate body 3005 is disposed opposite to the second side of the plate body 3005. The second end of the ninth branch plate 301 is disposed on the second conductive layer 113 of the first power unit 101, and the second end of the tenth branch plate 302 is disposed on the second conductive layer 113 of the second power unit 102.

[0108] The second power terminal 300 further includes an eleventh branch plate 303 and a twelfth branch plate 304 .

[0109] The first end of the eleventh branch plate 303 is disposed on the first side of the plate body 3005, and the first end of the twelfth branch plate 304 is disposed on the second side of the plate body 3005. The second end of the eleventh branch plate 303 is disposed on the second conductive layer 113 of the first power unit 101, and the second end of the twelfth branch plate 304 is disposed on the second conductive layer 113 of the second power unit 102.

[0110] The second power terminal 300 also includes a lead-out plate 2010 connected to the plate body 3005 . The lead-out plate 2010 of the first power terminal 200 and the lead-out plate 2010 of the second power terminal 300 are symmetrically arranged in the second preset direction.

[0111] The second power terminal 300 also includes a thirteenth branch plate 305 and a fourteenth branch plate 306 that are spaced apart. The thirteenth branch plate 305 and the fourteenth branch plate 306 are spaced apart. The thirteenth branch plate 305 is connected between the eleventh connection section 2011 of the lead-out plate 2010 of the second power terminal 300 and the plate body 3005. The fourteenth branch plate 306 is connected between the twelfth connection section 2012 of the lead-out plate 2010 of the second power terminal 300 and the plate body 3005.

[0112] The thirteenth branch plate 305 includes a thirteenth connection section, a fourteenth connection section and a fifteenth connection section connected in sequence, the thirteenth connection section is connected between the plate body 3005 and the fourteenth connection section, and the fifteenth connection section is connected between the fourteenth connection section and the eleventh connection section 2011 of the lead-out plate 2010 of the second power terminal 300. The thirteenth connection section extends in a direction from the first power unit 101 to the second power unit 102, the fourteenth connection section extends in a direction from the bottom plate 110 to the first conductive layer 112, and the fifteenth connection section extends in a direction from the second power unit 102 to the first power unit 101.

[0113] The fourteenth branch plate 306 and the thirteenth branch plate 305 have the same structure.

[0114] The processing technology of the second power terminal 300 of this embodiment is as follows: the material between the ninth branch plate 301 and the eleventh branch plate 303 is removed by a stamping process, the material between the tenth branch plate 302 and the thirteenth branch plate 305 is removed by a stamping process, the material between the twelfth branch plate 304 and the fourteenth branch plate 306 is removed by a stamping process, and the ninth branch plate 301, the tenth branch plate 302, the eleventh branch plate 303, the twelfth branch plate 304 and the lead-out plate are obtained by a bending process.

[0115] The distance between the side of the insulating layer 130 close to the multiple chips 120 and the side of the multiple chips 120 close to the insulating layer 130 is the eleventh distance, and the eleventh distance is between 0.8 mm and 1.2 mm, specifically, it can be 0.8 mm, 0.9 mm, 0.99 mm, 1 mm or 1.2 mm. The distance between the side of the insulating layer 130 close to the multiple first diodes 150 and the side of the multiple first diodes 150 close to the insulating layer 130 is the twelfth distance, and the twelfth distance is between 2.2 mm and 2.7 mm, specifically, it can be 2.2 mm, 2.4 mm, 2.51 mm, 2.6 mm or 2.7 mm. The ratio of the eleventh distance to the twelfth distance is between 0.296 and 0.545. In this way, the distance between the chip 120 and the first diode 150 can be ensured, and the heat dissipation of the chip 120 can be ensured.

[0116] In this embodiment, the eleventh distance is 0.99 mm, and the twelfth distance is 2.51 mm.

[0117] like Fig.12 As shown, the distance between the side of the sixth connecting section 232 facing the base plate 110 and the side of the first conductive layer 112 away from the base plate 110 is e, the thickness of the insulating layer 130 is f, the distance between the side of the main plate 210 facing the board body 3005 and the side of the board body 3005 facing the base plate 110 is g, and the distance between the first board segment of the lead-out plate 2010 of the first power terminal 200 and the first board segment of the lead-out plate 2010 of the second power terminal 300 is h.

[0118] like Fig.10 As shown, the distance between the side of the first branch plate 220 facing the third branch plate 240 and the side of the ninth branch plate 301 facing the first branch plate 220 is i, the distance between the side of the fourteenth connecting segment of the thirteenth branch plate 305 close to the first power unit 101 in the first preset direction and the first side of the main plate 210 is j, and the distance between the thirteenth connecting segment of the thirteenth branch plate 305 and the fifth connecting segment 231 is k.

[0119] The value of e is between 3 mm and 5 mm, which can ensure the insulation between the sixth connecting segment 232 and the first conductive layer 112, and also has the advantages of improving space utilization and reducing the current loop area together with the first conductive layer 112, thereby reducing the current loop parasitic inductance.

[0120] The value of f is between 0.3 mm and 1 mm, which can ensure the insulation effect between the control unit 140 and the first conductive layer 112, while taking into account the difficulty of implementing the bonding process, avoiding the difficulty of bonding caused by f being too large, and leaving some space between e as insulation between the two.

[0121] The value of g is between 2 mm and 4 mm, so that the insulation between the first power terminal 200 and the second power terminal 300 can be ensured.

[0122] The value of h is between 4 mm and 6 mm, which can ensure the insulation between the first power terminal 200 and the second power terminal 300 and can also reduce the current loop area and thus reduce the parasitic inductance of the module.

[0123] The value of i is between 2 mm and 4 mm, which can ensure the insulation between the first power terminal 200 and the second power terminal 300 and improve space utilization.

[0124] The value of j is between 3 mm and 4 mm, which can ensure the insulation between the first power terminal 200 and the second power terminal 300 and improve the space utilization.

[0125] The value of k is between 3 mm and 5 mm, which can ensure the insulation between the first power terminal 200 and the second power terminal 300 and improve the space utilization.

[0126] The distance between the two side walls of the bottom plate 110 in the first preset direction is between 48mm and 52mm, which can be 48mm, 49.5mm, 50mm or 52mm. The distance between the two side walls of the bottom plate 110 in the second preset direction is between 56mm and 60mm, which can be 56mm, 58.2mm, 59mm or 60mm.

[0127] The distance between the two side walls of the first conductive plate 1121 in the first preset direction is between 13 mm and 18 mm, which can be 13 mm, 14 mm, 15.99 mm or 18 mm. The distance between the two side walls of the first conductive plate 1121 in the second preset direction is between 50 mm and 55 mm, which can be 51 mm, 52 mm, 53.2 mm or 55 mm.

[0128] The distance between the two side walls of the second conductive plate 1122 in the first preset direction is between 6 mm and 8 mm, which can be 6 mm, 7 mm, 7.48 mm or 8 mm. The distance between the two side walls of the second conductive plate 1122 in the second preset direction is between 6 mm and 9 mm, which can be 6 mm, 7 mm, 7.74 mm or 9 mm. In the first preset direction, the center line of the second conductive plate 1122 is collinear with the center line of the first conductive plate 1121, and the second conductive plate 1122 is symmetrically arranged.

[0129] In the first preset direction, the center line of the second conductive layer 113 is colinear with the center line of the first conductive plate 1121, the second conductive layer 113 is symmetrically arranged, and the distance between the two side walls of the second conductive layer 113 is between 40 mm and 43 mm, which can be 40 mm, 41 mm, 41.2 mm or 43 mm.

[0130] In the second preset direction, the distance between the two side walls of the second conductive layer 113 is between 16 mm and 20 mm, and may be 16 mm, 17 mm, 18.5 mm or 20 mm.

[0131] In the second preset direction, the side of the fourth conductive layer 160 away from the fifth conductive layer 170 is flush with the side wall of the first conductive plate 1121, and the side of the fifth conductive layer 170 away from the fourth conductive layer 160 is flush with the side wall of the first conductive plate 1121. The fourth conductive layer 160 and the fifth conductive layer 170 are symmetrically arranged about the center line of the first conductive plate 1121. The distance between the fourth conductive layer 160 and the second conductive layer 113 is between 1 mm and 4 mm, which can be 1 mm, 2.5 mm, 3 mm or 4 mm.

[0132] In the first preset direction, the distance between the fourth conductive layer 160 and the first conductive plate 1121 is between 1 and 4 mm, which can be 1 mm, 2 mm, 2.51 mm or 4 mm. In the first preset direction, the distance between the two side walls of the fourth conductive layer 160 is between 13 mm and 18 mm, which can be 13 mm, 14 mm, 16.5 mm or 18 mm. In the second preset direction, the distance between the two side walls of the fourth conductive layer 160 is between 2 mm and 5 mm, which can be 2 mm, 3 mm, 3.5 mm or 5 mm. The fifth conductive layer 170 has the same size as the fourth conductive layer 160. In the first preset direction, the side of the fifth conductive layer 170 away from the first conductive plate 1121, the side of the fourth conductive layer 160 away from the first conductive plate 1121, and the side of the second conductive layer 113 away from the first conductive plate 1121 are arranged flush.

[0133] In the first preset direction, the distance between the first diode 150 and the chip 120 is between 7mm and 10mm, which can be 7mm, 8mm, 9.4mm or 10mm. The distance between the chip 120 and the second diode 180 is between 7mm and 10mm, which can be 7mm, 8mm, 9mm or 10mm. The distance between two adjacent chips 120 is between 1mm and 3mm, which can be 1mm, 2mm, 2.17mm or 3mm. The distance between the part of the first diode 150 disposed between the second diode 180 and the fourth conductive layer 160 is between 0.5mm and 2mm, which can be 0.5mm, 1mm, 1.5mm or 2mm. The distance between the part of the first diode 150 disposed between the second diode 180 and the fifth conductive layer 170 is between 0.5mm and 2mm, which can be 0.5mm, 1mm, 1.5mm or 2mm. The distance between the two chips located on both sides of the second diode 180 is between 8mm and 11mm, which can be 8mm, 9mm, 9.5mm or 11mm.

[0134] In the second preset direction, the distance between the side of the first diode 150 away from the first conductive plate 1121 and the side of the second conductive layer 113 away from the first conductive plate 1121 is between 4 mm and 7 mm, which may be 4 mm, 5 mm, 6.2 mm or 7 mm.

[0135] The second diode 180 is disposed in the middle of the second conductive plate 1122 .

[0136] The distance between the two side walls of the first diode 150 in the first preset direction is between 9 mm and 12 mm, which can be 9 mm, 10 mm, 11.8 mm or 12 mm. The distance between the two side walls of the first diode 150 in the second preset direction is between 5 mm and 8 mm, which can be 5 mm, 6 mm, 6.8 mm or 8 mm.

[0137] When the power device of this embodiment is tested, the voltage is 6.5 kV, and the current flowing between the first power terminal 200 and the second power terminal 300 is 400 A.

[0138] In this embodiment, the distance between the two side walls of the bottom plate 110 in the first preset direction is 49.5 mm, and the distance between the two side walls of the bottom plate 110 in the second preset direction is 58.2 mm.

[0139] The distance between the two side walls of the first conductive plate 1121 in the first preset direction is 15.99 mm, and the distance between the two side walls of the first conductive plate 1121 in the second preset direction is 53.2 mm.

[0140] The distance between the two side walls of the second conductive plate 1122 in the first preset direction is 7.48 mm, and the distance between the two side walls of the second conductive plate 1122 in the second preset direction is 7.74 mm.

[0141] In the first preset direction, the center line of the second conductive layer 113 is collinear with the center line of the first conductive plate 1121 , the second conductive layer 113 is symmetrically arranged, the distance between the two side walls of the second conductive layer 113 is 41.2 mm, and the distance between the second conductive layer 113 and the first conductive plate 1121 is 0.51 mm.

[0142] In the second preset direction, the distance between the two side walls of the second conductive layer 113 is 18.5 mm.

[0143] The interval between the avoiding gap 1131 and the second conductive plate 1122 is 0.51 mm.

[0144] In the second preset direction, the distance between the fourth conductive layer 160 and the second conductive layer 113 is 2.5 mm.

[0145] In the first preset direction, the distance between the fourth conductive layer 160 and the first conductive plate 1121 is 2.51 mm. In the first preset direction, the distance between the two side walls of the fourth conductive layer 160 is 16.5 mm. In the second preset direction, the distance between the two side walls of the fourth conductive layer 160 is 3.5 mm.

[0146] In the first preset direction, the distance between the first diode 150 and the chip 120 is 9.4 mm, the distance between the chip 120 and the second diode 180 is 8 mm, the distance between two adjacent chips 120 is 2.17 mm, the distance between the part of the first diode 150 disposed between the second diode 180 and the fourth conductive layer 160 is 1 mm, and the distance between the part of the first diode 150 disposed between the second diode 180 and the fifth conductive layer 170 is 1 mm. The distance between the two chips located on both sides of the second diode 180 is 9.5 mm.

[0147] In the second preset direction, the distance between the side of the first diode 150 away from the first conductive plate 1121 and the side of the second conductive layer 113 away from the first conductive plate 1121 is 6.2 mm.

[0148] The chip 120 has an outer dimension of 8 mm×8 mm. The distance between two side walls of the first diode 150 in the first preset direction is 11.8 mm, and the distance between two side walls of the first diode 150 in the second preset direction is 6.8 mm.

[0149] like Fig.14 As shown, when the power unit of this embodiment is tested, the maximum temperature of the chip 120 is 85°C (corresponding to Fig.14 The maximum temperature of the first diode 150 and the second diode 180 is 76° C. Compared with the prior art, in which the maximum temperature of the chip is 96° C. and the maximum temperature of the diode is 84° C., the technical solution of this embodiment effectively reduces the temperature of the power unit when in use.

[0150] Fig.14 The minimum temperature is 40℃.

[0151] The equivalent heat dissipation area of ​​the power unit is 989.27 square millimeters, which is 18.3% higher than the equivalent heat dissipation area of ​​836.34 square millimeters in the prior art.

[0152] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0153] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0154] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of classifying the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0155] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A power device, characterized in that: include: Power Unit (100), The power unit (100) comprises: A bottom plate (110), the bottom plate (110) having a first conductive layer (112) and a second conductive layer (113) arranged at intervals along a first preset direction, the first conductive layer (112) and the second conductive layer (113) being conductively connected; A chip (120) is arranged on the first conductive layer (112), and a first side of the chip (120) is connected to the first conductive layer (112); An insulating layer (130) disposed on the first conductive layer (112); a control unit (140) connected to the chip (120), the control unit (140) being arranged on a surface of the insulating layer (130) away from the first conductive layer (112); A first diode (150) is arranged on the second conductive layer (113); The power unit (100) further comprises a second diode (180), the second diode (180) being arranged on the first conductive layer (112), the second diode (180) being connected to the second conductive layer (113) at a side away from the first conductive layer (112), and the chip (120) and the second diode (180) being located on both sides of the insulating layer (130); The first conductive layer (112) comprises a first conductive plate (1121) and a second conductive plate (1122) connected to the first conductive plate (1121), the insulating layer (130) is arranged on the first conductive plate (1121), and the second diode (180) is arranged on the second conductive plate (1122); The second conductive layer (113) is provided with an avoidance gap (1131), and the second conductive plate (1122) is located in the avoidance gap (1131).

2. The power device according to claim 1, characterized in that: The insulating layer (130) comprises a ceramic board, and the control unit (140) comprises a PCB board.

3. The power device according to claim 1, characterized in that: The first diode (150) includes a plurality of first diodes (150) arranged at intervals, and the power unit (100) further includes a fourth conductive layer (160) and a fifth conductive layer (170), a portion of the plurality of first diodes (150) is connected to the fourth conductive layer (160), another portion of the plurality of first diodes (150) is connected to the fifth conductive layer (170), and the fourth conductive layer (160), the second conductive layer (113), and the fifth conductive layer (170) are arranged at intervals in a second preset direction.

4. The power device according to claim 1, characterized in that: The power unit further comprises a third conductive layer (111), the second side of the chip (120) being connected to the third conductive layer (111). The power device further comprises a first power terminal (200) and a second power terminal (300). The first power terminal (200) is conductively connected to the third conductive layer (111), and the second power terminal (300) is conductively connected to the second conductive layer (113).

5. The power device according to claim 4, characterized in that: The power device further comprises a mounting plate (400); the power units (100) are multiple, and the multiple power units (100) are arranged on the mounting plate (400) at intervals; the multiple power units (100) comprise a first power unit (101) and a second power unit (102); the first power terminal (200) is connected to both the first power unit (101) and the second power unit (102); and the second power terminal (300) is connected to both the first power unit (101) and the second power unit (102).

6. The power device according to claim 5, characterized in that: The first power unit (101) and the second power unit (102) are arranged at intervals in a first preset direction, and the second conductive layer (113) of the first power unit (101) and the second conductive layer (113) of the second power unit (102) are arranged adjacent to each other.

7. The power device according to claim 5, characterized in that: The first power terminal (200) comprises a main body plate (210), a first branch plate (220) and a second branch plate (230); a first end of the first branch plate (220) is connected to the main body plate (210), a second end of the first branch plate (220) is connected to the third conductive layer (111) of the first power unit (101), a first end of the second branch plate (230) is connected to the main body plate (210), and a second end of the second branch plate (230) is connected to the third conductive layer (111) of the second power unit (102).

8. The power device according to claim 7, characterized in that: The first branch plate (220) is folded back and has an overlapping section (2205) that is overlapped with the main body plate (210).

9. The power device according to claim 8, characterized in that: The first branch plate (220) comprises a first connection section (221) arranged on a side of the main plate (210) facing the mounting plate (400), a first end of the first connection section (221) being connected to the overlapping section (2205) and to a side of the main plate (210) away from the first power unit (101) in a first preset direction, and a second end of the first connection section (221) being connected to a third conductive layer (111) of the first power unit (101).

10. The power device according to claim 7, characterized in that: The first power terminal (200) further comprises a third branch plate (240) and a fourth branch plate (250), wherein a first end of the third branch plate (240) is connected to the main plate (210), a second end of the third branch plate (240) is connected to the second conductive layer (113) of the first power unit (101), a first end of the fourth branch plate (250) is connected to the main plate (210), and a second end of the fourth branch plate (250) is connected to the second conductive layer (113) of the second power unit (102).

11. The power device according to claim 10, characterized in that: The distance between the second branch plate (230) and the fourth branch plate (250) is smaller than the distance between the first branch plate (220) and the third branch plate (240); the second branch plate (230) is located between the first branch plate (220) and the third branch plate (240); and the fourth branch plate (250) is located between the first branch plate (220) and the third branch plate (240).

12. The power device according to claim 11, characterized in that: The chip (120) and the second conductive layer (113) are located on both sides of the control unit (140).

13. The power device according to claim 4, characterized in that: The third conductive layer (111), the first conductive plate (1121), and the second conductive plate (1122) are arranged at intervals in the first preset direction.

14. The power device according to claim 4, characterized in that: The second conductive layer (113) comprises a third conductive plate (1132), the avoidance gap (1131) is arranged on a side of the third conductive plate (1132) facing the third conductive layer (111), and a plurality of the first diodes (150) are arranged at intervals on both sides of the avoidance gap (1131).

15. The power device according to claim 3, characterized in that: The portion of the first diode (150) connected to the fourth conductive layer (160) is located between the avoidance gap (1131) and the fourth conductive layer (160), and the portion of the first diode (150) connected to the fifth conductive layer (170) is located between the avoidance gap (1131) and the fifth conductive layer (170).

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