Insulation impedance detection method, system and storage medium of energy storage device

Abstract

The present invention provides an insulation impedance detection method, system and storage medium of an energy storage device. First, by adjusting the resistance value of a first resistor, when first modulus information and second modulus information are in a first multiple information relationship, first resistance value information of the first resistor is recorded; then, by adjusting the resistance value of the first resistor, when the first modulus information and second modulus information are in a second multiple information relationship, second resistance value information of the first resistor is recorded; finally, first insulation impedance information and second insulation impedance information are obtained according to the first resistance value information, the second resistance value information and the third resistance value information; the present invention realizes the insulation impedance detection of the energy storage device by adjusting the resistance value of the first resistor; and at the same time, by adjusting the preset multiple information, the accuracy of the insulation impedance detection is improved.

Description

Technical Field

[0001] The present invention relates to the field of energy storage electronics, and more specifically, to an insulation impedance detection method, system and storage medium for energy storage equipment. Background Art

[0002] Insulation resistance is a physical quantity that is proportional to the degree of obstruction of current passing through insulating materials. It refers to the degree of resistance of insulating materials in circuits to current. Insulation resistance is inversely proportional to the ability of current to pass through insulating materials, that is, the greater the resistance of insulating materials, the smaller the current passing through.

[0003] In the field of energy storage, the insulation impedance of the battery is an important indicator to measure the insulation performance of the battery pack. It reflects the impedance between the battery pack and the ground (or other potentials). The insulation impedance is directly related to the safety and stability of the battery pack. Therefore, insulation impedance detection is an integral and necessary function of the energy storage system.

[0004] Some traditional insulation impedance detection technologies require the control of multiple relay switches, which makes the control process complicated; some use multi-stage filtering and amplification circuits to improve detection accuracy, but the circuits are complex and have high maintenance costs.

[0005] Therefore, there is an urgent need for an insulation impedance detection technology for energy storage devices that can measure the insulation impedance of energy storage devices with a simple circuit while taking into account the insulation impedance detection accuracy. Summary of the invention

[0006] In view of the above problems, the purpose of the present invention is to provide an insulation impedance detection method, system and storage medium for an energy storage device. First, the resistance value of the first resistor is adjusted until the first modulus information and the second modulus information are in a preset multiple relationship, and the resistance value of the first resistor is recorded; then, according to the preset multiple relationship and the recorded resistance value of the first resistor, the first insulation impedance information and the second insulation impedance information of the energy storage device are calculated; the present invention realizes the insulation impedance detection of the energy storage device by adjusting the resistance value of the first resistor; and at the same time, by adjusting the preset multiple information, the accuracy of the insulation impedance detection is improved.

[0007] A first aspect of the present invention provides a method for detecting insulation impedance of an energy storage device, the method comprising:

[0008] Obtaining first modulus information and second modulus information;

[0009] By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a first multiple information relationship;

[0010] Recording first resistance information of the first resistor;

[0011] By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a second multiple information relationship;

[0012] Recording second resistance information of the first resistor;

[0013] Obtaining third resistance value information;

[0014] First insulation impedance information and second insulation impedance information are obtained according to the first resistance information, the second resistance information and the third resistance information.

[0015] In this solution, the first insulation impedance information and the second insulation impedance information are obtained according to the first resistance information, the second resistance information and the third resistance information, specifically:

[0016] Obtaining a first current relationship according to the first multiple information, the first resistance information and the third resistance information;

[0017] Obtaining a second current relationship according to the second multiple information, the second resistance information and the third resistance information;

[0018] According to the first current relationship formula and the second current relationship formula, a first insulation impedance relationship formula and a second insulation impedance relationship formula are obtained;

[0019] Obtaining first insulation impedance information according to the first insulation impedance relationship;

[0020] The second insulation impedance information is obtained according to the second insulation impedance relationship.

[0021] This plan also includes:

[0022] The first resistor is a variable resistance circuit or an adjustable resistor;

[0023] When the first resistor is a variable resistance circuit;

[0024] According to a preset switch control signal, a resistor in the variable resistance circuit is switched on;

[0025] When the first resistor is an adjustable resistor;

[0026] Obtaining the current resistance value of the first resistor according to a preset resistance value acquisition instruction;

[0027] According to a preset resistance adjustment instruction, the resistance value of the first resistor is adjusted.

[0028] This plan also includes:

[0029] Obtaining first resistance difference information according to a difference between the first resistance information and the second resistance information;

[0030] Determining whether the first resistance difference information is lower than a preset first resistance difference threshold;

[0031] If yes, the first multiple information is adjusted downward or the second multiple information is adjusted upward;

[0032] If not, determining whether the first resistance difference information is higher than a preset second resistance difference threshold;

[0033] If so, the first multiple information is adjusted upward or the second multiple information is adjusted downward.

[0034] This plan also includes:

[0035] Setting the first resistor to a minimum resistance value;

[0036] Obtaining the first modulus information and the second modulus information;

[0037] Calculate the ratio of the first modulus information to the second modulus information to obtain third multiple information;

[0038] Determining whether the third multiple information is less than the first multiple information;

[0039] If not, the first multiple information is adjusted according to the third multiple information.

[0040] This plan also includes:

[0041] Setting the first resistor to a maximum resistance value;

[0042] Obtaining the first modulus information and the second modulus information;

[0043] Calculate the ratio of the first modulus information to the second modulus information to obtain fourth multiple information;

[0044] Determining whether the fourth multiple information is greater than the second multiple information;

[0045] If not, adjusting the second multiple information according to the fourth multiple information.

[0046] A second aspect of the present invention provides an insulation impedance detection system for an energy storage device, including an insulation impedance detection method program for an energy storage device, wherein the insulation impedance detection method program for the energy storage device implements the following steps when executed by the processor:

[0047] Obtaining first modulus information and second modulus information;

[0048] By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a first multiple information relationship;

[0049] Recording first resistance information of the first resistor;

[0050] By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a second multiple information relationship;

[0051] Recording second resistance information of the first resistor;

[0052] Obtaining third resistance value information;

[0053] First insulation impedance information and second insulation impedance information are obtained according to the first resistance information, the second resistance information and the third resistance information.

[0054] In this solution, the first insulation impedance information and the second insulation impedance information are obtained according to the first resistance information, the second resistance information and the third resistance information, specifically:

[0055] Obtaining a first current relationship according to the first multiple information, the first resistance information and the third resistance information;

[0056] Obtaining a second current relationship according to the second multiple information, the second resistance information and the third resistance information;

[0057] According to the first current relationship formula and the second current relationship formula, a first insulation impedance relationship formula and a second insulation impedance relationship formula are obtained;

[0058] Obtaining first insulation impedance information according to the first insulation impedance relationship;

[0059] The second insulation impedance information is obtained according to the second insulation impedance relationship.

[0060] This plan also includes:

[0061] The first resistor is a variable resistance circuit or an adjustable resistor;

[0062] When the first resistor is a variable resistance circuit;

[0063] According to a preset switch control signal, a resistor in the variable resistance circuit is switched on;

[0064] When the first resistor is an adjustable resistor;

[0065] Obtaining the current resistance value of the first resistor according to a preset resistance value acquisition instruction;

[0066] According to a preset resistance adjustment instruction, the resistance value of the first resistor is adjusted.

[0067] A third aspect of the present invention provides a computer-readable storage medium, which includes a program for a method for detecting insulation impedance of an energy storage device. When the program for detecting insulation impedance of an energy storage device is executed by a processor, the steps of the method for detecting insulation impedance of an energy storage device as described in any one of the above items are implemented.

[0068] The present invention provides an insulation impedance detection method, system and storage medium of an energy storage device. First, by adjusting the resistance value of a first resistor, when first modulus information and second modulus information are in a first multiple information relationship, first resistance value information of the first resistor is recorded; then, by adjusting the resistance value of the first resistor, when the first modulus information and second modulus information are in a second multiple information relationship, second resistance value information of the first resistor is recorded; finally, first insulation impedance information and second insulation impedance information are obtained according to the first resistance value information, the second resistance value information and the third resistance value information; the present invention realizes the insulation impedance detection of the energy storage device by adjusting the resistance value of the first resistor; and at the same time, by adjusting the preset multiple information, the accuracy of the insulation impedance detection is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and should not be regarded as limiting the scope.

[0070] Figure 1 An equivalent circuit schematic diagram of an insulation impedance detection circuit of an energy storage device is shown;

[0071] Figure 2 A flow chart showing a method for detecting insulation impedance of an energy storage device according to the present invention is shown;

[0072] Figure 3 A calculation flow chart of insulation resistance provided by an embodiment of the present invention is shown;

[0073] Figure 4 A flow chart of adjusting the resistance value of a first resistor provided by an embodiment of the present invention is shown;

[0074] Figure 5 A block diagram of an insulation impedance detection system for an energy storage device of the present invention is shown. DETAILED DESCRIPTION

[0075] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0076] Unless otherwise defined, all terms (including technical and scientific terms) used in the embodiments of the present invention have the same meanings as commonly understood by those skilled in the art to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless the embodiments of the present invention are explicitly defined in this way.

[0077] The words "first", "second" and similar words used in the embodiments of the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "one", "an" or "the" and similar words do not indicate a quantity limitation, but indicate the existence of at least one. Similarly, words such as "include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The steps before or after the method of the embodiment of the present invention are not necessarily carried out in order. On the contrary, various steps can be processed in reverse order or simultaneously. At the same time, other operations can also be added to these processes, or a step or several steps can be removed from these processes.

[0078] In addition, the functional modules in the various embodiments of the present invention may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0079] Figure 1 The invention shows an equivalent circuit schematic diagram of an insulation impedance detection circuit of an energy storage device.

[0080] like Figure 1 As shown, the present invention is applied to an insulation impedance detection circuit of an energy storage device, and the circuit comprises:

[0081] A start switch, a first resistor, and a second resistor;

[0082] The start switch is used to switch the working state of the insulation impedance detection function;

[0083] The first resistor is connected in parallel with the insulation impedance from the positive electrode of the energy storage device to the ground, and the resistance value of the first resistor is adjustable;

[0084] The second resistor is connected in parallel with the insulation impedance from the negative electrode of the energy storage device to the ground.

[0085] It should be noted that if Figure 1 As shown, the start switch K1, the first resistor R1, the second resistor R2, the insulation resistance Rx of the positive pole of the energy storage device to the ground, and the insulation resistance Ry of the negative pole of the energy storage device to the ground; the analog-to-digital conversion value ADC1 of the positive pole of the energy storage device to the negative pole, and the analog-to-digital conversion value ADC2 of the negative pole of the energy storage device to the ground. By starting the switch K1, when insulation impedance detection is required, it is set to a closed state; when insulation impedance detection is not required, it is set to an open state, thereby avoiding the energy storage device from failing the withstand voltage test due to the existence of the first resistor R1 and the second resistor R2 of the grounding resistance. The resistance value of the first resistor is adjustable. By adjusting the resistance value of the first resistor, the resistance value of the circuit system is changed, which is used to measure the insulation impedance Rx and Ry.

[0086] Figure 2 A flow chart of an insulation impedance detection method for an energy storage device of the present invention is shown.

[0087] like Figure 2 As shown, the present invention discloses a method for detecting insulation impedance of an energy storage device, the method comprising:

[0088] S202, obtaining first modulus information and second modulus information;

[0089] S204, adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a first multiple information relationship;

[0090] S206, recording first resistance information of the first resistor;

[0091] S208, adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a second multiple information relationship;

[0092] S210, recording second resistance information of the first resistor;

[0093] S212, obtaining third resistance value information;

[0094] S214: Obtain first insulation impedance information and second insulation impedance information according to the first resistance information, the second resistance information, and the third resistance information.

[0095] It should be noted that the first modulus information is the analog-to-digital conversion value of the voltage value from the positive electrode to the negative electrode of the energy storage device; the second modulus information is the analog-to-digital conversion value of the voltage value from the negative electrode of the energy storage device to the reference ground; the first multiple information is the ratio of the first modulus information to the second modulus information; the second multiple information is another ratio of the first modulus information to the second modulus information; the first resistance value information is the resistance value of the first resistor when the ratio of the first modulus information to the second modulus information is the first multiple information; the second resistance value information is the resistance value of the first resistor when the ratio of the first modulus information to the second modulus information is the second multiple information; the third resistance value information is the resistance value of the second resistor; the first insulation impedance information is the insulation impedance from the positive electrode of the energy storage device to the reference ground; the second insulation impedance information is the insulation impedance from the negative electrode of the energy storage device to the reference ground.

[0096] In this embodiment, by closing the start switch, the insulation impedance detection mode is entered. First, by adjusting the resistance value of the first resistor, the ratio of the first modulus information to the second modulus information is made to be in the relationship of the first multiple information, that is, the first modulus information is M times the second modulus information; record the resistance value of the first resistor as the first resistance value information. Then, by adjusting the resistance value of the first resistor again, the ratio of the first modulus information to the second modulus information is made to be in the relationship of the second multiple information, that is, the first modulus information is N times the second modulus information; record the resistance value of the first resistor as the second resistance value information. Among them, in practical applications, the first multiple information M and the second multiple information N must be set to be unequal, and usually satisfy M < N. Finally, according to the first resistance value information, the second resistance value information, and the third resistance value information, and the circuit current relationship formed when the ratio of the first modulus information to the second modulus information is M and N respectively, the first insulation impedance information and the second insulation impedance information are obtained.

[0097] Figure 3 Shows the calculation flow chart of the insulation impedance provided by the embodiment of the present invention.

[0098] According to the embodiment of the present invention, as Figure 3 shown, obtaining the first insulation impedance information and the second insulation impedance information according to the first resistance value information, the second resistance value information, and the third resistance value information is specifically as follows:

[0099] S302, obtain the first current relational expression according to the first multiple information, the first resistance value information, and the third resistance value information;

[0100] S304, obtain the second current relational expression according to the second multiple information, the second resistance value information, and the third resistance value information;

[0101] S306, obtaining a first insulation impedance relationship expression and a second insulation impedance relationship expression according to the first current relationship expression and the second current relationship expression;

[0102] S308, obtaining first insulation impedance information according to the first insulation impedance relationship formula;

[0103] S310: Obtain second insulation impedance information according to the second insulation impedance relationship equation.

[0104] It should be noted that the first current relationship and the second current relationship can be obtained from the equivalent circuit. From the current relationship, it can be seen that the sum of the currents flowing through the first resistor and the first insulation impedance is the same as the sum of the currents flowing through the second resistor and the second insulation impedance. Therefore, the current relationship is as follows:

[0105] ;

[0106] Where:

[0107] is the voltage value represented by the first analog-to-digital information;

[0108] is the voltage value represented by the second mode information;

[0109] is the resistance value of the first resistor;

[0110] is the resistance value of the second resistor;

[0111] is the resistance value of the first insulation impedance;

[0112] is the resistance value of the second insulation impedance;

[0113] When the first analog-to-digital information is M times the second analog-to-digital information, the above current relationship can be transformed into the first current relationship:

[0114] ;

[0115] Among them, at this time is the first resistance value information;

[0116] When the first analog-to-digital information is N times the second analog-to-digital information, the above current relationship can be transformed into the second current relationship:

[0117] ;

[0118] Among them, at this time is the second resistance value information;

[0119] Combining the above two current relationships, the resistance value of the first insulation impedance can be calculated. And the resistance value of the second insulation impedance .

[0120] Figure 4 A flow chart of adjusting the resistance value of a first resistor provided by an embodiment of the present invention is shown.

[0121] According to an embodiment of the present invention, Figure 4 As shown, it also includes:

[0122] S402, the first resistor is a variable resistance circuit or an adjustable resistor;

[0123] S404, when the first resistor is a variable resistance circuit;

[0124] S406, switching on the resistor in the variable resistance circuit according to a preset switch control signal;

[0125] S408, when the first resistor is an adjustable resistor;

[0126] S410, obtaining the current resistance value of the first resistor according to a preset resistance value obtaining instruction;

[0127] S412, adjusting the resistance value of the first resistor according to a preset resistance adjustment instruction.

[0128] It should be noted that, as an embodiment, the resistance value of the first resistor can be changed by a variable resistor circuit. The variable resistor circuit includes at least two resistors connected in series or in parallel, and the conduction and disconnection of the resistor are selected by a relay or an analog switch according to a switch control signal to achieve a change in resistance; the resistance value of the first resistor is calculated according to the connection method of the resistor. As another embodiment, the first resistor is a digital adjustable resistor. According to the resistance value set by the digital adjustable resistor, an instruction is obtained to obtain the current resistance value of the digital adjustable resistor. According to the resistance value adjustment instruction set by the digital adjustable resistor, the resistance value of the digital adjustable resistor is adjusted upward or downward.

[0129] According to an embodiment of the present invention, it also includes:

[0130] Obtaining first resistance difference information according to a difference between the first resistance information and the second resistance information;

[0131] Determining whether the first resistance difference information is lower than a preset first resistance difference threshold;

[0132] If yes, the first multiple information is adjusted downward or the second multiple information is adjusted upward;

[0133] If not, determining whether the first resistance difference information is higher than a preset second resistance difference threshold;

[0134] If so, the first multiple information is adjusted upward or the second multiple information is adjusted downward.

[0135] It should be noted that the present invention is provided with an automatic adjustment function of the first multiple information and the second multiple information to improve the accuracy of insulation impedance detection. When the resistance values ​​of the first resistance information under the first multiple information condition and the second resistance information under the second multiple information condition are close, the measurement tolerance is low, and the problem of abnormal calculation results of insulation impedance caused by measurement errors is prone to occur. Therefore, when the difference between the first resistance information and the second resistance information is lower than the preset first resistance difference threshold, it is necessary to adjust the second multiple information upward so that the second resistance information becomes smaller and the second resistance information is far away from the first resistance information, thereby improving the first resistance difference information. When the resistance values ​​of the first resistance information under the first multiple information condition and the second resistance information under the second multiple information condition are relatively large, the problem of insufficient measurement accuracy is prone to occur. Therefore, when the difference between the first resistance information and the second resistance information is higher than the preset second resistance difference threshold, it is necessary to adjust the first multiple information downward so that the first resistance information becomes larger and the first resistance information is close to the second resistance information, thereby reducing the first resistance difference information.

[0136] According to an embodiment of the present invention, it also includes:

[0137] Setting the first resistor to a minimum resistance value;

[0138] Obtaining the first modulus information and the second modulus information;

[0139] Calculate the ratio of the first modulus information to the second modulus information to obtain third multiple information;

[0140] Determining whether the third multiple information is less than the first multiple information;

[0141] If not, the first multiple information is adjusted according to the third multiple information.

[0142] It should be noted that, in order to ensure that within the adjustment range of the first resistor, the ratio of the first modulus information to the second modulus information can meet the requirements of the first multiple information, the present invention sets a limiting function for the lower limit of the first multiple information. The first resistor is set to the lowest resistance value, and the ratio of the first modulus information to the second modulus information at this time is obtained, which is recorded as the third multiple information; wherein the third multiple information is the lowest modulus multiple that can be adjusted by the current first resistor. When the third multiple information is not less than the first multiple information, it means that the first resistor cannot reduce the resistance value so that the ratio of the first mode information to the second modulus information meets the requirements of the first multiple information; therefore, the first multiple information is adjusted by the third multiple information at this time.

[0143] According to an embodiment of the present invention, it also includes:

[0144] Setting the first resistor to a maximum resistance value;

[0145] Obtaining the first modulus information and the second modulus information;

[0146] Calculate the ratio of the first modulus information to the second modulus information to obtain fourth multiple information;

[0147] Determining whether the fourth multiple information is greater than the second multiple information;

[0148] If not, adjusting the second multiple information according to the fourth multiple information.

[0149] It should be noted that, in order to ensure that within the adjustment range of the first resistor, the ratio of the first modulus information to the second modulus information can reach the requirement of the second multiple information, the present invention sets a limiting function for the upper limit of the second multiple information. The first resistor is set to the highest resistance value, and the ratio of the first modulus information to the second modulus information at this time is obtained, which is recorded as the fourth multiple information; wherein the fourth multiple information is the highest modulus multiple that can be adjusted by the current first resistor. When the fourth multiple information is not greater than the second multiple information, it means that the first resistor cannot make the ratio of the first mode information to the second modulus information reach the requirement of the second multiple information by increasing the resistance value; therefore, the second multiple information is adjusted by the fourth multiple information at this time.

[0150] It is worth mentioning that it also includes:

[0151] When the first resistor is an adjustable resistor;

[0152] The first resistor is composed of one or more fixed resistors or adjustable resistors connected in a preset connection mode;

[0153] The connection mode is series connection or parallel connection.

[0154] It should be noted that, as an implementation mode, the first resistor is composed of one or more resistors connected in series, so that the amplitude of the adjustable resistance is increased. For example, the first resistor is composed of an adjustable variable resistor and a fixed resistance resistor connected in series, wherein the adjustment range of the adjustable variable resistor is 0-10 resistance units, the resistance of the fixed resistance resistor is 10 resistance units, and the resistance range of the two after being connected in series is 10-20 resistance units.

[0155] As an implementation mode, the first resistor is composed of one or more resistors connected in series, so that the adjustment output accuracy is improved, and the output power adjustment accuracy is improved. For example, assuming that the adjustment level of the adjustable variable resistor is 10 levels, for an adjustable variable resistor with an adjustment range of 0-20 resistance units, its adjustment step is 2 resistance units; using two adjustable variable resistors with an adjustment range of 0-10 resistance units in series, the combined adjustment range is 0-20 resistance units, and the adjustment step is 1 resistance unit.

[0156] It is worth mentioning that it also includes:

[0157] When the resistance value of the second resistor is adjustable;

[0158] When the third multiple information is less than the first multiple information;

[0159] Determine whether the third resistance value information is lower than a preset first resistance value threshold;

[0160] If so, the resistance of the second resistor is adjusted upward by sending a resistance adjustment instruction.

[0161] It should be noted that when the second resistor is an adjustable resistor, the lower limit of the first multiple information can be adjusted by adjusting the resistance value of the second resistor. When the third multiple information is less than the first multiple information, it means that the lower limit of the first multiple information is too high, that is, the third multiple information is too high. At this time, the resistance value of the second resistor is adjusted upward through the preset second resistor resistance adjustment instruction to reduce the third multiple information, that is, reduce the lower limit of the first multiple information.

[0162] It is worth mentioning that it also includes:

[0163] When the resistance value of the second resistor is adjustable;

[0164] When the fourth multiple information is greater than the second multiple information;

[0165] Determining whether the third resistance value information exceeds a preset second resistance value threshold;

[0166] If so, the resistance of the second resistor is adjusted downward by sending a resistance adjustment instruction.

[0167] It should be noted that when the second resistor is an adjustable resistor, the upper limit of the second multiple information can be adjusted by adjusting the resistance value of the second resistor. When the fourth multiple information is greater than the second multiple information, it means that the upper limit of the second multiple information is too high, that is, the fourth multiple information is too high. At this time, the resistance value of the second resistor is adjusted downward through the preset second resistor resistance adjustment instruction to increase the fourth multiple information, that is, to increase the upper limit of the second multiple information.

[0168] Figure 5 A block diagram of an insulation impedance detection system for an energy storage device of the present invention is shown.

[0169] like Figure 5 As shown, the present invention discloses an insulation impedance detection system 5 for energy storage equipment, including a memory 51 and a processor 52, wherein the memory includes an insulation impedance detection method program for energy storage equipment, and when the insulation impedance detection method program for energy storage equipment is executed by the processor, the following steps are implemented:

[0170] Obtaining first modulus information and second modulus information;

[0171] By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a first multiple information relationship;

[0172] Recording first resistance information of the first resistor;

[0173] By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a second multiple information relationship;

[0174] Recording second resistance information of the first resistor;

[0175] Obtaining third resistance value information;

[0176] First insulation impedance information and second insulation impedance information are obtained according to the first resistance information, the second resistance information and the third resistance information.

[0177] It should be noted that the first modulus information is the analog-to-digital conversion value of the voltage value from the positive electrode to the negative electrode of the energy storage device; the second modulus information is the analog-to-digital conversion value of the voltage value from the negative electrode of the energy storage device to the reference ground; the first multiple information is the ratio of the first modulus information to the second modulus information; the second multiple information is another ratio of the first modulus information to the second modulus information; the first resistance value information is the resistance value of the first resistor when the ratio of the first modulus information to the second modulus information is the first multiple information; the second resistance value information is the resistance value of the first resistor when the ratio of the first modulus information to the second modulus information is the second multiple information; the third resistance value information is the resistance value of the second resistor; the first insulation impedance information is the insulation impedance from the positive electrode of the energy storage device to the reference ground; the second insulation impedance information is the insulation impedance from the negative electrode of the energy storage device to the reference ground.

[0178] In this embodiment, by closing the start switch, the insulation impedance detection mode is entered. First, by adjusting the resistance value of the first resistor, the ratio of the first modulus information to the second modulus information is made to be in the relationship of the first multiple information, that is, the first modulus information is M times the second modulus information; record the resistance value of the first resistor as the first resistance value information. Then, by adjusting the resistance value of the first resistor again, the ratio of the first modulus information to the second modulus information is made to be in the relationship of the second multiple information, that is, the first modulus information is N times the second modulus information; record the resistance value of the first resistor as the second resistance value information. Among them, in practical applications, the first multiple information M and the second multiple information N must be set to be unequal, and usually M < N is satisfied. Finally, according to the first resistance value information, the second resistance value information, and the third resistance value information, based on the circuit current relationship formed when the ratio of the first modulus information to the second modulus information is M and N respectively, the first insulation impedance information and the second insulation impedance information are obtained.

[0179] According to the embodiment of the present invention, the obtaining of the first insulation impedance information and the second insulation impedance information according to the first resistance value information, the second resistance value information, and the third resistance value information is specifically as follows:

[0180] According to the first multiple information, the first resistance value information, and the third resistance value information, a first current relation formula is obtained;

[0181] According to the second multiple information, the second resistance value information, and the third resistance value information, a second current relation formula is obtained;

[0182] According to the first current relation formula and the second current relation formula, a first insulation impedance relation formula and a second insulation impedance relation formula are obtained;

[0183] Obtaining first insulation impedance information according to the first insulation impedance relationship;

[0184] The second insulation impedance information is obtained according to the second insulation impedance relationship.

[0185] It should be noted that the first current relationship and the second current relationship can be obtained from the equivalent circuit. From the current relationship, it can be seen that the sum of the currents flowing through the first resistor and the first insulation impedance is the same as the sum of the currents flowing through the second resistor and the second insulation impedance. Therefore, the current relationship is as follows:

[0186] ;

[0187] Where:

[0188] is the voltage value represented by the first analog-to-digital information;

[0189] is the voltage value represented by the second mode information;

[0190] is the resistance value of the first resistor;

[0191] is the resistance value of the second resistor;

[0192] is the resistance value of the first insulation impedance;

[0193] is the resistance value of the second insulation impedance;

[0194] When the first analog-to-digital information is M times the second analog-to-digital information, the above current relationship can be transformed into the first current relationship:

[0195] ;

[0196] Among them, at this time is the first resistance value information;

[0197] When the first analog-to-digital information is N times the second analog-to-digital information, the above current relationship can be transformed into the second current relationship:

[0198] ;

[0199] Among them, at this time is the second resistance value information;

[0200] Combining the above two current relationships, the resistance value of the first insulation impedance can be calculated. And the resistance value of the second insulation impedance .

[0201] According to an embodiment of the present invention, it also includes:

[0202] The first resistor is a variable resistance circuit or an adjustable resistor;

[0203] When the first resistor is a variable resistance circuit;

[0204] According to a preset switch control signal, a resistor in the variable resistance circuit is switched on;

[0205] When the first resistor is an adjustable resistor;

[0206] Obtaining the current resistance value of the first resistor according to a preset resistance value acquisition instruction;

[0207] According to a preset resistance adjustment instruction, the resistance value of the first resistor is adjusted.

[0208] It should be noted that, as an embodiment, the resistance value of the first resistor can be changed by a variable resistor circuit. The variable resistor circuit includes at least two resistors connected in series or in parallel, and the conduction and disconnection of the resistor are selected by a relay or an analog switch according to a switch control signal to achieve a change in resistance; the resistance value of the first resistor is calculated according to the connection method of the resistor. As another embodiment, the first resistor is a digital adjustable resistor. According to the resistance value set by the digital adjustable resistor, an instruction is obtained to obtain the current resistance value of the digital adjustable resistor. According to the resistance value adjustment instruction set by the digital adjustable resistor, the resistance value of the digital adjustable resistor is adjusted upward or downward.

[0209] According to an embodiment of the present invention, it also includes:

[0210] Obtaining first resistance difference information according to a difference between the first resistance information and the second resistance information;

[0211] Determining whether the first resistance difference information is lower than a preset first resistance difference threshold;

[0212] If yes, the first multiple information is adjusted downward or the second multiple information is adjusted upward;

[0213] If not, determining whether the first resistance difference information is higher than a preset second resistance difference threshold;

[0214] If so, the first multiple information is adjusted upward or the second multiple information is adjusted downward.

[0215] It should be noted that the present invention is provided with an automatic adjustment function of the first multiple information and the second multiple information to improve the accuracy of insulation impedance detection. When the resistance values ​​of the first resistance information under the first multiple information condition and the second resistance information under the second multiple information condition are close, the measurement tolerance is low, and the problem of abnormal calculation results of insulation impedance caused by measurement errors is prone to occur. Therefore, when the difference between the first resistance information and the second resistance information is lower than the preset first resistance difference threshold, it is necessary to adjust the second multiple information upward so that the second resistance information becomes smaller and the second resistance information is far away from the first resistance information, thereby improving the first resistance difference information. When the resistance values ​​of the first resistance information under the first multiple information condition and the second resistance information under the second multiple information condition are relatively large, the problem of insufficient measurement accuracy is prone to occur. Therefore, when the difference between the first resistance information and the second resistance information is higher than the preset second resistance difference threshold, it is necessary to adjust the first multiple information downward so that the first resistance information becomes larger and the first resistance information is close to the second resistance information, thereby reducing the first resistance difference information.

[0216] According to an embodiment of the present invention, it also includes:

[0217] Setting the first resistor to a minimum resistance value;

[0218] Obtaining the first modulus information and the second modulus information;

[0219] Calculate the ratio of the first modulus information to the second modulus information to obtain third multiple information;

[0220] Determining whether the third multiple information is less than the first multiple information;

[0221] If not, the first multiple information is adjusted according to the third multiple information.

[0222] It should be noted that, in order to ensure that within the adjustment range of the first resistor, the ratio of the first modulus information to the second modulus information can meet the requirements of the first multiple information, the present invention sets a limiting function for the lower limit of the first multiple information. The first resistor is set to the lowest resistance value, and the ratio of the first modulus information to the second modulus information at this time is obtained, which is recorded as the third multiple information; wherein the third multiple information is the lowest modulus multiple that can be adjusted by the current first resistor. When the third multiple information is not less than the first multiple information, it means that the first resistor cannot reduce the resistance value so that the ratio of the first mode information to the second modulus information meets the requirements of the first multiple information; therefore, the first multiple information is adjusted by the third multiple information at this time.

[0223] According to an embodiment of the present invention, it also includes:

[0224] Setting the first resistor to a maximum resistance value;

[0225] Obtaining the first modulus information and the second modulus information;

[0226] Calculate the ratio of the first modulus information to the second modulus information to obtain fourth multiple information;

[0227] Determining whether the fourth multiple information is greater than the second multiple information;

[0228] If not, adjusting the second multiple information according to the fourth multiple information.

[0229] It should be noted that, in order to ensure that within the adjustment range of the first resistor, the ratio of the first modulus information to the second modulus information can reach the requirement of the second multiple information, the present invention sets a limiting function for the upper limit of the second multiple information. The first resistor is set to the highest resistance value, and the ratio of the first modulus information to the second modulus information at this time is obtained, which is recorded as the fourth multiple information; wherein the fourth multiple information is the highest modulus multiple that can be adjusted by the current first resistor. When the fourth multiple information is not greater than the second multiple information, it means that the first resistor cannot make the ratio of the first mode information to the second modulus information reach the requirement of the second multiple information by increasing the resistance value; therefore, the second multiple information is adjusted by the fourth multiple information at this time.

[0230] It is worth mentioning that it also includes:

[0231] When the first resistor is an adjustable resistor;

[0232] The first resistor is composed of one or more fixed resistors or adjustable resistors connected in a preset connection mode;

[0233] The connection mode is series connection or parallel connection.

[0234] It should be noted that, as an implementation mode, the first resistor is composed of one or more resistors connected in series, so that the amplitude of the adjustable resistance is increased. For example, the first resistor is composed of an adjustable variable resistor and a fixed resistance resistor connected in series, wherein the adjustment range of the adjustable variable resistor is 0-10 resistance units, the resistance of the fixed resistance resistor is 10 resistance units, and the resistance range of the two after being connected in series is 10-20 resistance units.

[0235] As an implementation mode, the first resistor is composed of one or more resistors connected in series, so that the adjustment output accuracy is improved, and the output power adjustment accuracy is improved. For example, assuming that the adjustment level of the adjustable variable resistor is 10 levels, for an adjustable variable resistor with an adjustment range of 0-20 resistance units, its adjustment step is 2 resistance units; using two adjustable variable resistors with an adjustment range of 0-10 resistance units in series, the combined adjustment range is 0-20 resistance units, and the adjustment step is 1 resistance unit.

[0236] It is worth mentioning that it also includes:

[0237] When the resistance value of the second resistor is adjustable;

[0238] When the third multiple information is less than the first multiple information;

[0239] Determine whether the third resistance value information is lower than a preset first resistance value threshold;

[0240] If so, the resistance of the second resistor is adjusted upward by sending a resistance adjustment instruction.

[0241] It should be noted that when the second resistor is an adjustable resistor, the lower limit of the first multiple information can be adjusted by adjusting the resistance value of the second resistor. When the third multiple information is less than the first multiple information, it means that the lower limit of the first multiple information is too high, that is, the third multiple information is too high. At this time, the resistance value of the second resistor is adjusted upward through the preset second resistor resistance adjustment instruction to reduce the third multiple information, that is, reduce the lower limit of the first multiple information.

[0242] It is worth mentioning that it also includes:

[0243] When the resistance value of the second resistor is adjustable;

[0244] When the fourth multiple information is greater than the second multiple information;

[0245] Determining whether the third resistance value information exceeds a preset second resistance value threshold;

[0246] If so, the resistance of the second resistor is adjusted downward by sending a resistance adjustment instruction.

[0247] It should be noted that when the second resistor is an adjustable resistor, the upper limit of the second multiple information can be adjusted by adjusting the resistance value of the second resistor. When the fourth multiple information is greater than the second multiple information, it means that the upper limit of the second multiple information is too high, that is, the fourth multiple information is too high. At this time, the resistance value of the second resistor is adjusted downward through the preset second resistor resistance adjustment instruction to increase the fourth multiple information, that is, to increase the upper limit of the second multiple information.

[0248] A third aspect of the present invention provides a computer-readable storage medium, which includes a program for a method for detecting insulation impedance of an energy storage device. When the program for detecting insulation impedance of an energy storage device is executed by a processor, the steps of the method for detecting insulation impedance of an energy storage device as described in any one of the above items are implemented.

[0249] The present invention provides an insulation impedance detection method, system and storage medium of an energy storage device. First, by adjusting the resistance value of a first resistor, when first modulus information and second modulus information are in a first multiple information relationship, first resistance value information of the first resistor is recorded; then, by adjusting the resistance value of the first resistor, when the first modulus information and second modulus information are in a second multiple information relationship, second resistance value information of the first resistor is recorded; finally, first insulation impedance information and second insulation impedance information are obtained according to the first resistance value information, the second resistance value information and the third resistance value information; the present invention realizes the insulation impedance detection of the energy storage device by adjusting the resistance value of the first resistor; and at the same time, by adjusting the preset multiple information, the accuracy of the insulation impedance detection is improved.

[0250] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods described in various embodiments of the present invention. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, and other media that can store program codes.

[0251] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An insulation impedance detection method for an energy storage device, applied to an insulation impedance detection circuit for an energy storage device, the insulation impedance detection circuit for the energy storage device comprising: A start switch, a first resistor, and a second resistor; The start switch is used to switch the working state of the insulation impedance detection function; The first resistor is connected in parallel with the insulation impedance from the positive electrode of the energy storage device to the ground, and the resistance value of the first resistor is adjustable; The second resistor is connected in parallel with the insulation impedance from the negative electrode of the energy storage device to the ground; Characterized in that the method comprises: Obtaining first modulus information and second modulus information; By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a first multiple information relationship; Recording first resistance information of the first resistor; Setting the first resistor to a minimum resistance value; Obtaining the first modulus information and the second modulus information; Calculate the ratio of the first modulus information to the second modulus information to obtain third multiple information; Determining whether the third multiple information is less than the first multiple information; If not, adjusting the first multiple information according to the third multiple information; By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a second multiple information relationship; Recording second resistance information of the first resistor; Setting the first resistor to a maximum resistance value; Obtaining the first modulus information and the second modulus information; Calculate the ratio of the first modulus information to the second modulus information to obtain fourth multiple information; Determining whether the fourth multiple information is greater than the second multiple information; If not, adjusting the second multiple information according to the fourth multiple information; Acquire third resistance information of the second resistor; Obtaining first insulation impedance information and second insulation impedance information according to the first resistance information, the second resistance information and the third resistance information; The first analog-to-digital information is an analog-to-digital conversion value of a voltage value between a positive electrode and a negative electrode of the energy storage device; The second analog-to-digital information is an analog-to-digital conversion value of the voltage value of the negative electrode of the energy storage device to the ground; The first insulation impedance information is the insulation impedance of the positive electrode of the energy storage device to the ground; The second insulation impedance information is the insulation impedance of the negative electrode of the energy storage device to the ground.

2. The insulation impedance detection method of an energy storage device according to claim 1, characterized in that: The obtaining of first insulation impedance information and second insulation impedance information according to the first resistance information, the second resistance information and the third resistance information is specifically: Obtaining a first current relationship according to the first multiple information, the first resistance information and the third resistance information; Obtaining a second current relationship according to the second multiple information, the second resistance information and the third resistance information; According to the first current relationship formula and the second current relationship formula, a first insulation impedance relationship formula and a second insulation impedance relationship formula are obtained; Obtaining first insulation impedance information according to the first insulation impedance relationship; The second insulation impedance information is obtained according to the second insulation impedance relationship.

3. The insulation impedance detection method of an energy storage device according to claim 1, characterized in that: Also includes: The first resistor is a variable resistance circuit or an adjustable resistor; When the first resistor is a variable resistance circuit; According to a preset switch control signal, a resistor in the variable resistance circuit is switched on; When the first resistor is an adjustable resistor; Obtaining the current resistance value of the first resistor according to a preset resistance value acquisition instruction; According to a preset resistance adjustment instruction, the resistance value of the first resistor is adjusted.

4. The insulation impedance detection method of an energy storage device according to claim 1, characterized in that: Also includes: Obtaining first resistance difference information according to a difference between the first resistance information and the second resistance information; Determining whether the first resistance difference information is lower than a preset first resistance difference threshold; If yes, the first multiple information is adjusted downward or the second multiple information is adjusted upward; If not, determining whether the first resistance difference information is higher than a preset second resistance difference threshold; If so, the first multiple information is adjusted upward or the second multiple information is adjusted downward.

5. An insulation impedance detection system for an energy storage device, applied to an insulation impedance detection circuit for an energy storage device, the insulation impedance detection circuit for the energy storage device comprising: A start switch, a first resistor, and a second resistor; The start switch is used to switch the working state of the insulation impedance detection function; The first resistor is connected in parallel with the insulation impedance from the positive electrode of the energy storage device to the ground, and the resistance value of the first resistor is adjustable; The second resistor is connected in parallel with the insulation impedance from the negative electrode of the energy storage device to the ground; The system comprises a memory and a processor, wherein the memory comprises a method program for detecting insulation impedance of an energy storage device, and when the method program for detecting insulation impedance of an energy storage device is executed by the processor, the following steps are implemented: Obtaining first modulus information and second modulus information; By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a first multiple information relationship; Recording first resistance information of the first resistor; Setting the first resistor to a minimum resistance value; Obtaining the first modulus information and the second modulus information; Calculate the ratio of the first modulus information to the second modulus information to obtain third multiple information; Determining whether the third multiple information is less than the first multiple information; If not, adjusting the first multiple information according to the third multiple information; By adjusting the resistance value of the first resistor until the first modulus information and the second modulus information are in a second multiple information relationship; Recording second resistance information of the first resistor; Setting the first resistor to a maximum resistance value; Obtaining the first modulus information and the second modulus information; Calculate the ratio of the first modulus information to the second modulus information to obtain fourth multiple information; Determining whether the fourth multiple information is greater than the second multiple information; If not, adjusting the second multiple information according to the fourth multiple information; Acquire third resistance information of the second resistor; Obtaining first insulation impedance information and second insulation impedance information according to the first resistance information, the second resistance information and the third resistance information; The first analog-to-digital information is an analog-to-digital conversion value of a voltage value between a positive electrode and a negative electrode of the energy storage device; The second analog-to-digital information is an analog-to-digital conversion value of the voltage value of the negative electrode of the energy storage device to the ground; The first insulation impedance information is the insulation impedance of the positive electrode of the energy storage device to the ground; The second insulation impedance information is the insulation impedance of the negative electrode of the energy storage device to the ground.

6. The insulation impedance detection system of an energy storage device according to claim 5, characterized in that: The obtaining of first insulation impedance information and second insulation impedance information according to the first resistance information, the second resistance information and the third resistance information is specifically: Obtaining a first current relationship according to the first multiple information, the first resistance information and the third resistance information; Obtaining a second current relationship according to the second multiple information, the second resistance information and the third resistance information; According to the first current relationship formula and the second current relationship formula, a first insulation impedance relationship formula and a second insulation impedance relationship formula are obtained; Obtaining first insulation impedance information according to the first insulation impedance relationship; The second insulation impedance information is obtained according to the second insulation impedance relationship.

7. The insulation impedance detection system of an energy storage device according to claim 5, characterized in that: Also includes: The first resistor is a variable resistance circuit or an adjustable resistor; When the first resistor is a variable resistance circuit; According to a preset switch control signal, a resistor in the variable resistance circuit is switched on; When the first resistor is an adjustable resistor; Obtaining the current resistance value of the first resistor according to a preset resistance value acquisition instruction; According to a preset resistance adjustment instruction, the resistance value of the first resistor is adjusted.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that: The computer-readable storage medium includes an insulation impedance detection method program for an energy storage device. When the insulation impedance detection method program for the energy storage device is executed by a processor, the steps of the insulation impedance detection method for the energy storage device according to any one of claims 1 to 4 are implemented.

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