Perovskite solar cell and preparation method thereof

Abstract

The invention provides a perovskite solar cell and a preparation method thereof, in the perovskite solar cell, an interface modification layer is added between an electron transport layer and a perovskite light absorption layer, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material comprise amidino and sulfonyl; according to the invention, amidino in the interface modification layer can passivate cation defects in the perovskite light absorption layer, sulfonyl in the interface modification layer can realize effective connection between the perovskite light absorption layer and the electron transport layer, and interface contact between the perovskite light absorption layer and the electron transport layer is enhanced. And the efficiency and the stability of the perovskite solar cell are obviously improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and more specifically, to a perovskite solar cell and a preparation method thereof, and in particular to a perovskite solar cell based on an interface modification layer and a preparation method thereof. Background Art

[0002] Halide perovskite materials have attracted great attention from scientific researchers in recent years due to their excellent optical properties and simple preparation. The certified efficiency of perovskite solar cells has exceeded 25%. In perovskite solar cells, the electron transport layer plays an important role in electron extraction and separation and hole blocking. Therefore, selecting suitable electron transport layer materials can accelerate the electron extraction between the electron transport layer and the perovskite layer interface and reduce the non-radiative recombination between the electron transport layer and the perovskite layer interface, which is crucial to improving the photoelectric performance of perovskite solar cells.

[0003] At present, SnO2 is a commonly used electron transport layer material in perovskite solar cells. However, due to the poor lattice matching between perovskite materials and SnO2, the bonding between the perovskite layer and the SnO2 electron transport layer interface is poor. In addition, there are many interface defects between the perovskite layer and the SnO2 electron transport layer, and ordinary perovskite passivation methods are difficult to passivate the interface between the perovskite layer and the SnO2 electron transport layer. The above problems will lead to limited carrier transport in perovskite solar cells and non-radiative recombination at the interface, ultimately affecting the photoelectric conversion efficiency and stability of the entire perovskite solar cell.

[0004] Therefore, how to solve the poor bonding between the perovskite layer and the SnO2 electron transport layer interface and how to passivate the interface defects between the perovskite layer and the SnO2 electron transport layer are problems that need to be solved urgently by those skilled in the art. Summary of the invention

[0005] In view of this, in order to solve the above problems, the present invention provides a perovskite solar cell and a preparation method thereof, and the technical solution is as follows:

[0006] A perovskite solar cell, comprising:

[0007] substrate;

[0008] In a first direction, an electron transport layer, an interface modification layer and a perovskite light absorption layer are sequentially located on one side of the substrate, wherein the first direction is perpendicular to the plane where the substrate is located and points from the substrate to the electron transport layer;

[0009] Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

[0010] Preferably, in the above perovskite solar cell, the fluorine-containing organic salt material is (4-amidinophenyl) methanesulfonyl fluoride hydrochloride.

[0011] Preferably, in the above perovskite solar cell, the perovskite solar cell further comprises:

[0012] In the first direction, a hole transport layer and an electrode are sequentially located on a side of the perovskite light absorbing layer away from the substrate.

[0013] Preferably, in the above-mentioned perovskite solar cell, the material of the electron transport layer is SnO2 material.

[0014] Preferably, in the above perovskite solar cell, the substrate is a FTO conductive substrate or an ITO conductive substrate.

[0015] Preferably, in the above-mentioned perovskite solar cell, the material of the perovskite light-absorbing layer is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halogen ion.

[0016] Preferably, in the above perovskite solar cell, the thickness of the electron transport layer ranges from 20 nm to 40 nm;

[0017] The thickness of the interface modification layer ranges from 1 nm to 10 nm;

[0018] The thickness of the perovskite light absorbing layer ranges from 200nm to 800nm.

[0019] Preferably, in the above perovskite solar cell, the material of the hole transport layer is Spiro-OMeTAD;

[0020] The thickness of the hole transport layer ranges from 100 nm to 300 nm;

[0021] The material of the electrode is silver, gold or copper.

[0022] The present application also provides a method for preparing a perovskite solar cell, the method for preparing the above-mentioned perovskite solar cell comprising:

[0023] providing a substrate;

[0024] In a first direction, an electron transport layer, an interface modification layer and a perovskite light absorption layer are sequentially formed on one side of the substrate, wherein the first direction is perpendicular to the plane where the substrate is located and points from the substrate to the electron transport layer;

[0025] Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

[0026] Preferably, in the above-mentioned method for preparing a perovskite solar cell, the preparation method further comprises:

[0027] In the first direction, a hole transport layer and an electrode are sequentially formed on a side of the perovskite light absorbing layer away from the substrate.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] The present invention provides a perovskite solar cell and a preparation method thereof. In the perovskite solar cell, an interface modification layer is added between an electron transport layer and a perovskite light absorbing layer. The material of the interface modification layer is a fluorine-containing organic salt material. The components of the fluorine-containing organic salt material include an amidine group and a sulfonyl group. The present invention utilizes the amidine group in the interface modification layer to passivate the cation defects in the perovskite light absorbing layer, and utilizes the sulfonyl group in the interface modification layer to achieve effective connection between the perovskite light absorbing layer and the electron transport layer, thereby enhancing the interface contact between the perovskite light absorbing layer and the electron transport layer, and significantly improving the efficiency and stability of the perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0031] Figure 1 One of the structural schematic diagrams of a perovskite solar cell provided by an embodiment of the present invention;

[0032] Figure 2 A second schematic diagram of the structure of another perovskite solar cell provided by an embodiment of the present invention;

[0033] Figure 3 One of the schematic flow charts of a method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0034] Figure 4 A second schematic flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0035] Figure 5 A third flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0036] Figure 6 A fourth flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0037] Figure 7 A fifth flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention;

[0038] Figure 8 One of the curves of current density versus voltage of a perovskite solar cell provided in an embodiment of the present invention;

[0039] Fig. 9 A second graph showing the change in current density versus voltage of another perovskite solar cell provided in an embodiment of the present invention;

[0040] Fig.10 A third graph showing the variation of current density with voltage for another perovskite solar cell provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] Based on the content recorded in the background technology, the inventors found in the process of the invention of the present invention that due to the poor lattice matching between the perovskite material and SnO2, the binding between the perovskite layer and the SnO2 electron transport layer interface is poor, and there are still many defects in the interface between the perovskite layer and the SnO2 electron transport layer. It is difficult to passivate it by ordinary perovskite passivation methods, which leads to limited carrier transport in the perovskite solar cell and non-radiative recombination at the interface, which ultimately affects the photoelectric transmission efficiency and stability of the entire perovskite solar cell. Therefore, the embodiment of the present invention provides a perovskite solar cell and a preparation method thereof, which can be used to improve the binding between the perovskite layer and the electron transport layer, and passivate the interface defects between the perovskite layer and the electron transport layer.

[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] The embodiment of the present invention provides a perovskite solar cell, referring to Figure 1 , Figure 1 One of the structural schematic diagrams of a perovskite solar cell provided in an embodiment of the present invention, combined with Figure 1 , the perovskite solar cell comprises:

[0045] A substrate 1; in a first direction Y, an electron transport layer 2, an interface modification layer 3 and a perovskite light absorption layer 4 are sequentially located on one side of the substrate 1, wherein the first direction Y is perpendicular to the plane where the substrate 1 is located and points from the substrate 1 to the electron transport layer 2; wherein the material of the interface modification layer 3 is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine groups and sulfonyl groups.

[0046] Specifically, in an embodiment of the present invention, the substrate 1 includes but is not limited to a FTO conductive substrate or an ITO conductive substrate, etc.; the material of the electron transport layer 2 includes but is not limited to a SnO2 material, etc., and the thickness of the electron transport layer 2 in the first direction Y can take any value in the range of 20nm-40nm, for example, the thickness of the electron transport layer 2 in the first direction Y can be 20nm, 35nm, 40nm, etc.; the material of the interface modification layer 3 includes but is not limited to a fluorine-containing organic salt material, etc., and the fluorine-containing organic salt material includes but is not limited to (4-amidinophenyl) methanesulfonyl fluoride hydrochloride, etc., and it is necessary to ensure that the components of the fluorine-containing organic salt material have both an amidine group and a sulfonyl group, and the interface modification layer 3 has a thickness of 20nm-40nm. The thickness of the decorative layer 3 in the first direction Y can take any value in the range of 1nm-10nm, for example, the thickness of the interface modification layer 3 in the first direction Y can be 1nm, 5nm, 10nm, etc.; the material of the perovskite light absorption layer 4 is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halogen ion. The thickness of the perovskite light absorption layer 4 in the first direction Y can take any value in the range of 200nm-800nm, for example, the thickness of the perovskite light absorption layer 4 in the first direction Y can be 200nm, 4500nm, 800nm, etc.

[0047] From the above description, it can be seen that an embodiment of the present invention provides a perovskite solar cell and a preparation method thereof, in which an interface modification layer 3 is added between the electron transport layer 2 and the perovskite light absorbing layer 4 in the perovskite solar cell, and the material of the interface modification layer 3 is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine groups and sulfonyl groups; the present invention utilizes the amidine groups in the interface modification layer 3 to passivate the cation defects in the perovskite light absorbing layer 4, and utilizes the sulfonyl groups in the interface modification layer 3 to achieve effective connection between the perovskite light absorbing layer 4 and the electron transport layer 2, thereby enhancing the interface contact between the perovskite light absorbing layer 4 and the electron transport layer 2; adding the interface modification layer 3 can not only effectively improve the electrical properties of SnO2, but also passivate the surface of the perovskite light absorbing layer 4 facing the electron transport layer 2, thereby improving the perovskite crystallization, thereby significantly improving the efficiency and stability of the perovskite solar cell.

[0048] Optionally, in another embodiment of the present invention, the structure of the above-mentioned perovskite solar cell is further described, referring to Figure 2 , Figure 2 A second structural schematic diagram of another perovskite solar cell provided in an embodiment of the present invention, combined with Figure 2 , the perovskite solar cell further comprises:

[0049] In the first direction Y, the hole transport layer 5 and the electrode 6 are sequentially located on the side of the perovskite light absorbing layer 4 away from the substrate 1 .

[0050] Specifically, in an embodiment of the present invention, the material of the hole transport layer 5 includes but is not limited to Spiro-OMeTAD, etc., and the thickness of the hole transport layer 5 in the first direction Y can take any value in the range of 100nm-300nm. For example, the thickness of the hole transport layer 5 in the first direction Y can be 100nm, 150nm, 300nm, etc.; the material of the electrode 6 includes but is not limited to one of the materials such as silver, gold or copper, or a combination of the above materials. The electrode 6 can be used as the top electrode of the perovskite solar cell, and the substrate 1 can be used as the bottom electrode of the perovskite solar cell.

[0051] Optionally, in another embodiment of the present invention, a method for preparing a perovskite solar cell is further provided, wherein the method is used to prepare the perovskite solar cell described in any one of the above embodiments, with reference to Figure 3 , Figure 3 One of the flow diagrams of a method for preparing a perovskite solar cell provided in an embodiment of the present invention, combined with Figure 3 , the preparation method comprises:

[0052] S100, providing a substrate 1.

[0053] Specifically, in step S100, the substrate 1 includes but is not limited to a FTO conductive substrate or an ITO conductive substrate.

[0054] S200 , forming an electron transport layer 2 on one side of the substrate 1 .

[0055] Specifically, in step S200, forming the electron transport layer 2 includes but is not limited to forming the electron transport layer 2 on one side of the substrate 1 by methods such as scraping, spin coating, spraying, chemical bath deposition or atomic layer deposition. The material of the electron transport layer 2 includes but is not limited to SnO2 material, etc. The thickness of the electron transport layer 2 in the first direction Y can take any value in the range of 20nm-40nm.

[0056] S300, forming an interface modification layer 3 on the side of the electron transport layer 2 facing away from the substrate 1; wherein the material of the interface modification layer 3 is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine groups and sulfonyl groups.

[0057] Specifically, in step S300, the material of the interface modification layer 3 includes but is not limited to fluorine-containing organic salt materials, etc., and the fluorine-containing organic salt materials include but are not limited to (4-amidinophenyl) methanesulfonyl fluoride hydrochloride, etc. It is necessary to ensure that the components of the fluorine-containing organic salt material have both amidine and sulfonyl groups, and the thickness of the interface modification layer 3 in the first direction Y can take any value in the range of 1nm-10nm.

[0058] S400 , forming a perovskite light absorption layer 4 on a side of the interface modification layer 3 away from the electron transport layer 2 .

[0059] Specifically, in step S400, the material of the perovskite light absorbing layer 4 is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halogen ion. The thickness of the perovskite light absorbing layer 4 in the first direction Y can take any value in the range of 200nm-800nm.

[0060] Optionally, in another embodiment of the present invention, the preparation method of the above-mentioned perovskite solar cell is further described, and the fluorine-containing organic salt material is (4-amidinophenyl) methanesulfonyl fluoride hydrochloride as an example for description. Before forming the interface modification layer 3 in step S300, the preparation method further includes:

[0061] S500, prepare a (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution.

[0062] Specifically, in step S500, (4-amidinophenyl) methanesulfonyl fluoride hydrochloride is dissolved in a solvent to obtain a (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution, wherein the solvent of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution is one of water, ethanol, isopropanol or methanol, or a combination of the above solvents, and the concentration of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution can be any value in the range of 0.1 mg / mL-5 mg / mL, for example, the concentration of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution can be 0.1 mg / mL, 3 mg / mL, 5 mg / mL, etc.; after completing step S500, After preparing the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution, the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution is coated on the side of the electron transport layer 2 away from the substrate 1 by a method including but not limited to spin coating, blade coating or slit coating, and then annealing is performed to form an interface modification layer 3. The annealing temperature can be any value in the range of 60°C-150°C, for example, the annealing temperature can be 60°C, 100°C, 150°C, etc.; the annealing time can be any value in the range of 5min-20min, for example, the annealing time can be 5min, 10min, 20min, etc.

[0063] It should be noted that it is necessary to ensure that the preparation of the (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution in step S500 is completed before the formation of the interface modification layer 3 in step S300; Figure 4 As shown, Figure 4 A second flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention, Figure 4 The step S500 of preparing the (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution is performed before providing a substrate 1 in step S100; or it may be as follows Figure 5 As shown, Figure 5 A third flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention, Figure 5 The step S500 of preparing the (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution is performed after providing a substrate 1 in step S100 and before forming the electron transport layer 2 in step S200; or it can be performed as follows Figure 6 As shown, Figure 6 A fourth flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention, Figure 6 The implementation process of preparing the (4-amidinophenyl)methanesulfonyl fluoride hydrochloride solution in step S500 is performed after forming the electron transport layer 2 in step S200 and before forming the interface modification layer 3 in step S300.

[0064] Optionally, in another embodiment of the present invention, the above-mentioned method for preparing a perovskite solar cell is further described, referring to Figure 7 , Figure 7 A fifth flow chart of another method for preparing a perovskite solar cell provided in an embodiment of the present invention, combined with Figure 7 , taking the implementation process of preparing (4-amidinophenyl) methanesulfonyl fluoride hydrochloride solution in step S500 after forming the electron transport layer 2 in step S200 and before forming the interface modification layer 3 in step S300 as an example, after forming the perovskite light absorption layer 4 in step S400, the preparation method further includes:

[0065] S600 , in the first direction Y, sequentially forming a hole transport layer 5 and an electrode 6 on a side of the perovskite light absorbing layer 4 away from the substrate 1 .

[0066] Specifically, in an embodiment of the present invention, the material of the hole transport layer 5 includes but is not limited to Spiro-OMeTAD, etc., and the thickness of the hole transport layer 5 in the first direction Y can take any value in the range of 100nm-300nm; the material of the electrode 6 includes but is not limited to one of the materials such as silver, gold or copper, or a combination of the above materials, the electrode 6 can be used as the top electrode of the perovskite solar cell, and the substrate 1 can be used as the bottom electrode of the perovskite solar cell.

[0067] Optionally, based on the above-mentioned perovskite solar cell and its preparation method, several optional implementation methods of forming a perovskite solar cell are provided in another embodiment of the present invention, which are described in detail as follows:

[0068] The first method: clean the FTO glass substrate with acetone, isopropyl alcohol and deionized water in turn, blow dry it and treat it with ultraviolet ozone for 20 minutes; add 1 mL of SnO2 dispersion to 9 mL of water to prepare SnO2 spin coating solution; drop 100 microliters of SnO2 spin coating solution on the FTO glass substrate, spin coat at a speed of 4000 rpm for 20 seconds, and anneal at 180°C for 30 minutes to obtain a SnO2 electron transport layer. 10 mg of (4-amidinophenyl) methanesulfonyl fluoride hydrochloride was dissolved in 10 mL of ethanol, 100 μL was taken and dropped on the SnO2 electron transport layer, and the mixture was spin-coated at a spin-coating speed of 4000 rpm for 20 s, and annealed at 100°C for 10 minutes to form an interface modification layer 3; a CsPbI3 perovskite precursor solution was prepared in a nitrogen glove box, wherein the solutes in the perovskite precursor solution were CsI, PbI2 and DMAI, the molar ratio of the solutes was 1:1:1, the concentration was 0.8 mol / L, and the solvent was DMF; 50 μL of the perovskite precursor solution was taken and dropped on the interface modification layer 3, and the mixture was spin-coated at a spin-coating speed of 4000 rpm for 30 s, and annealed at 200°C for 5 minutes to obtain a perovskite light absorption layer 4. 72 mg of Spiro-OMeTAD and 39 μL of 4-tert-butylpyridine were dissolved in 1 mL of chlorobenzene, and 23 μL of 520 mg / mL acetonitrile solution of lithium bis(trifluoromethanesulfonyl)imide was added and mixed evenly. The mixture was spin-coated at a speed of 3000 rpm for 30 seconds to prepare a hole transport layer 5 on the perovskite light absorption layer 4. Finally, the hole transport layer 5 was prepared by vacuum evaporation at a vacuum degree of less than 10 -4 Pa, the deposition rate is The silver electrode is prepared under the conditions of , and finally a perovskite solar cell is obtained; wherein the thickness of the SnO2 electron transport layer in the perovskite solar cell prepared in the embodiment of the present invention is 20nm, the thickness of the interface modification layer 3 is 2nm, the thickness of the perovskite light absorption layer 4 is 400nm, the thickness of the hole transport layer 5 is 200nm, and the thickness of the silver electrode is 70nm.

[0069] The second method: Compared with the first preparation method, the thickness of the interface modification layer 3 prepared by the second preparation method is different from that of the first preparation method; the FTO glass substrate is cleaned with acetone, isopropyl ketone, and deionized water in turn, and then treated with ultraviolet ozone for 20 minutes after drying; 1 mL of SnO2 dispersion is added to 9 mL of water to prepare SnO2 spin coating solution; 100 microliters of SnO2 spin coating solution is dropped on the FTO glass substrate, and the spin coating speed is 4000 rpm for 20 seconds, and annealed at 180°C for 30 minutes to obtain a SnO2 electron transport layer. 30 mg of (4-amidinophenyl) methanesulfonyl fluoride hydrochloride was dissolved in 10 mL of ethanol, 100 μL was dropped on the SnO2 electron transport layer, and the mixture was spin-coated at a spin-coating speed of 4000 rpm for 20 s, and annealed at 100°C for 10 minutes to form an interface modification layer 3; a CsPbI3 perovskite precursor solution was prepared in a nitrogen glove box, wherein the solutes in the perovskite precursor solution were CsI, PbI2 and DMAI, the molar ratio of the solutes was 1:1:1, the concentration was 0.8 mol / L, and the solvent was DMF; 50 μL of the perovskite precursor solution was dropped on the interface modification layer 3, and the mixture was spin-coated at a spin-coating speed of 4000 rpm for 30 s, and annealed at 200°C for 5 minutes to obtain a perovskite light absorption layer 4. 72 mg of Spiro-OMeTAD and 39 μL of 4-tert-butylpyridine were dissolved in 1 mL of chlorobenzene, and 23 μL of 520 mg / mL acetonitrile solution of lithium bis(trifluoromethanesulfonyl)imide was added and mixed evenly. The mixture was spin-coated at a speed of 3000 rpm for 30 seconds to prepare a hole transport layer 5 on the perovskite light absorption layer 4. Finally, the hole transport layer 5 was prepared by vacuum evaporation at a vacuum degree of less than 10 -4 Pa, the deposition rate is The silver electrode is prepared under the conditions of , and finally a perovskite solar cell is obtained; wherein the thickness of the SnO2 electron transport layer in the perovskite solar cell prepared in the embodiment of the present invention is 20nm, the thickness of the interface modification layer 3 is 6nm, the thickness of the perovskite light absorption layer 4 is 400nm, the thickness of the hole transport layer 5 is 200nm, and the thickness of the silver electrode is 70nm.

[0070] The perovskite solar cells prepared by the above two preparation methods were tested and compared with the perovskite solar cells without the interface modification layer 3. Figure 8-Figure 10 , Figure 8 One of the curves of current density versus voltage of a perovskite solar cell provided in an embodiment of the present invention, Fig. 9 The second graph of the current density versus voltage variation of another perovskite solar cell provided in an embodiment of the present invention is as follows: Fig.10 A third graph of the current density of a perovskite solar cell as a function of voltage provided in an embodiment of the present invention, combined with Figure 8-Figure 10 The comparison results are as follows:

[0071] At room temperature, using a 3A solar simulator, at 100mW / cm 2 The photoelectric conversion efficiency of three perovskite solar cells was tested under a light intensity of . The effective area of ​​the three perovskite solar cells is 0.09 cm 2 ;like Figure 8 As shown, the perovskite solar cell prepared by the first preparation method was tested, and the short-circuit current density of the perovskite solar cell was 20.84 mA / cm 2 , the open circuit voltage is 1.143V, the fill factor is 77.49%, and the photoelectric conversion efficiency is 18.48%; Fig. 9 As shown, the perovskite solar cell prepared by the second preparation method was tested, and the short-circuit current density of the perovskite solar cell was 20.47 mA / cm 2 , the open circuit voltage is 1.165V, the fill factor is 78.54%, and the photoelectric conversion efficiency is 18.74%; Fig.10 As shown, the perovskite solar cell without the interface modification layer 3 was tested, and the short-circuit current density of the perovskite solar cell was 19.93 mA / cm 2 , the open circuit voltage is 1.112V, the fill factor is 72.34%, and the photoelectric conversion efficiency is 16.04%; by comparing the test results of the above three perovskite solar cells, it can be seen that the photoelectric conversion efficiency of the perovskite solar cell with the interface modification layer 3 is higher than the photoelectric conversion efficiency of the perovskite solar cell without the interface modification layer 3.

[0072] The above is a detailed introduction to a perovskite solar cell and a preparation method thereof provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

[0073] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0074] It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device that includes a series of elements is inherent to the elements, or also includes elements inherent to these processes, methods, articles or devices. In the absence of further restrictions, the elements defined by the sentence "including a..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.

[0075] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A perovskite solar cell, characterized in that: The perovskite solar cell comprises: substrate; In a first direction, an electron transport layer, an interface modification layer and a perovskite light absorption layer are sequentially located on one side of the substrate, wherein the first direction is perpendicular to the plane where the substrate is located and points from the substrate to the electron transport layer; Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

2. The perovskite solar cell according to claim 1, characterized in that The fluorine-containing organic salt material is (4-amidinophenyl) methanesulfonyl fluoride hydrochloride.

3. The perovskite solar cell according to claim 1, characterized in that The perovskite solar cell further comprises: In the first direction, a hole transport layer and an electrode are sequentially located on a side of the perovskite light absorbing layer away from the substrate.

4. The perovskite solar cell according to claim 1, characterized in that: The material of the electron transport layer is SnO2 material.

5. The perovskite solar cell according to claim 1, characterized in that: The substrate is a FTO conductive substrate or an ITO conductive substrate.

6. The perovskite solar cell according to claim 1, characterized in that: The material of the perovskite light absorbing layer is a halide perovskite material, and the crystal structure of the halide perovskite material is ABX3, wherein the A position is an organic cation or an inorganic cation, the B position is a divalent metal ion, and the X position is a halogen ion.

7. The perovskite solar cell according to claim 1, characterized in that: The thickness of the electron transport layer ranges from 20 nm to 40 nm; The thickness of the interface modification layer ranges from 1 nm to 10 nm; The thickness of the perovskite light absorbing layer ranges from 200nm to 800nm.

8. The perovskite solar cell according to claim 3, characterized in that: The material of the hole transport layer is Spiro-OMeTAD; The thickness of the hole transport layer ranges from 100 nm to 300 nm; The material of the electrode is silver, gold or copper.

9. A method for preparing a perovskite solar cell, characterized in that: The preparation method is used to prepare the perovskite solar cell according to any one of claims 1 to 8, and the preparation method comprises: providing a substrate; In a first direction, an electron transport layer, an interface modification layer and a perovskite light absorption layer are sequentially formed on one side of the substrate, wherein the first direction is perpendicular to the plane where the substrate is located and points from the substrate to the electron transport layer; Wherein, the material of the interface modification layer is a fluorine-containing organic salt material, and the components of the fluorine-containing organic salt material include amidine group and sulfonyl group.

10. The preparation method according to claim 9, characterized in that: The preparation method further comprises: In the first direction, a hole transport layer and an electrode are sequentially formed on a side of the perovskite light absorbing layer away from the substrate.

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