Copper alloy film having high strength and high conductivity

Abstract

The present disclosure relates to a copper alloy film having high strength and high conductivity. A method of forming a component may include electrochemically depositing a metallic material onto a carrier component to a thickness greater than 50 microns. The metallic material may include grains, and at least 90% of the grains may include nanotwinning boundaries. The metallic material may include a copper-silver alloy (Cu-Ag) having a thickness between about 0.5 at%-Ag and about 2 at%-Ag.

Description

[0001] This application is a divisional application of the invention patent application with application number 202210488458.0, application date May 6, 2022, and name “Copper alloy film with high strength and high conductivity”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This patent application claims the benefit of U.S. Provisional Patent Application No. 63 / 185,679, filed on May 7, 2021, entitled “COPPER ALLOY FILM WITH HIGHSTRENGTH AND HIGH CONDUCTIVITY,” the entire disclosure of which is hereby incorporated by reference. Technical Field

[0004] The described embodiments generally relate to electronic device components. More specifically, the present embodiments relate to components including nanotwinned metals. Background Art

[0005] Recent technological advances have enabled manufacturers to include a large number of operating components, such as processors, antennas, displays, cameras, tactile feedback components, and batteries, within a relatively small internal volume defined by the housing or casing of a portable electronic device. Due to the drive for thinner and smaller electronic devices, the internal volume of the device can be relatively small and can include multiple operating components in close proximity to each other. In addition, increasing the performance level of these components may require that a larger amount of power be delivered to the components in a shorter amount of time.

[0006] In use, the levels of resistance and thermal conductivity in these operating components and in the circuits that include these operating components can result in the generation of heat or thermal energy that can cause the components themselves and any other nearby components to be subjected to elevated operating temperatures. These elevated operating temperatures can degrade device performance and can cause device components to be subjected to undesirable levels of stress. Therefore, it may be desirable to reduce the resistance and increase the thermal conductivity of the operating components and circuits to allow high levels of current to flow without generating undesirably high levels of heat or hot spot areas.

[0007] Traditionally, the materials from which these operating components and circuits are formed have included metal alloys which attempt to reduce the electrical resistance of the material. This approach can result in a material having a relatively low electrical resistance, but also having a relatively low mechanical strength. Similarly, techniques for increasing the mechanical properties of materials for operating components and circuits can produce materials having a relatively high electrical resistance. Thus, it may be desirable to provide a material having a desired level of electrical resistance and thermal conductivity while also achieving a desired level of mechanical properties. Summary of the invention

[0008] The present disclosure relates generally to electronic devices. Specifically, the present disclosure relates to electronic components, materials, and methods of making and using the same. In one example, the present disclosure includes a method of forming a component, the method comprising depositing a metallic material including grains onto a carrier, wherein one or more of the grains include nanotwins, wherein the metallic material comprises a copper (Cu)-silver (Ag) alloy having between 0.5 at%-Ag and 2 at%-Ag.

[0009] In one example, the method may include depositing a metallic material, including co-sputtering a metallic material. Additionally, the method may include electroplating a material. In one example, a carrier of the method includes a conductive material. In one example, a carrier of the method includes a metal drum. In another example, a carrier of the method includes a conductive mandrel having a shape corresponding to a shape of the component. In another example, the carrier is at least partially immersed in an electrolyte solution including cations of the metallic material and an inhibitor.

[0010] In one example of the present disclosure, the raw material includes a metal material including grains, the metal material including a Cu-Ag alloy having between 0.5 at%-Ag and 2 at%-Ag, and at least 90% of the grains include nano twin boundaries.

[0011] In one example, the metallic material of the raw material comprises a continuous sheet having a length of at least 2 cm. In another example of the raw material, the grains have an average spacing between 2 nanometers (nm) and 5 nm between nanotwin boundaries. In yet another example of the raw material, at least 95% of the grains comprise nanotwin boundaries. In another example of the raw material, the metallic material has a thickness greater than 50 microns.

[0012] In another example of the present disclosure, an electronic device includes a conductive component having a metal alloy material including grains, the metal alloy material including a copper (Cu)-silver (Ag) alloy having between 0.5at%-Ag and 2at%-Ag, and at least 90% of the grains include nanotwin boundaries.

[0013] In one example of the electronic device, the conductive component is an electrically conductive component. In another example, the electrically conductive component comprises a charging socket. In one example, the electrically conductive component may include an electrical connector between two electronic components. In another example, the two electronic components comprise a printed circuit board. In yet another example, the electrically conductive component comprises a battery. In one example of the electronic device, the electrically conductive component is a thermally conductive component. In another example, the thermally conductive component comprises a support plate. In one example, the thermally conductive component comprises a non-planar shape and mechanically supports a component attached to the thermally conductive component.

[0014] In another example disclosed in the present disclosure, a battery includes an electrochemical cell having an electrolyte, an anode and a cathode, and a current collector electrically coupled to one of the anode or the cathode, the current collector including a metal alloy material, the metal alloy material including grains, at least 90% of the grains including nanotwin boundaries, the metal alloy material including at least one of copper (Cu) or silver (Ag).

[0015] In one example of the battery, the metal alloy material comprises a Cu-Ag alloy between 0.5 at%-Ag and 2 at%-Ag. In another example, the metal alloy material has a thickness of less than 10 microns. In one example, the electrochemical cell is a lithium ion electrochemical cell.

[0016] In one example, the present disclosure includes a method of forming a component, the method comprising electroplating a metallic material comprising grains onto a carrier, wherein one or more of the grains comprises nanotwins. In one example, the metallic material comprises a copper (Cu)-cobalt (Co) alloy, and the carrier is at least partially immersed in an electrolyte solution comprising between about 0.1 M and about 0.5 M CoSO4. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present disclosure will be readily understood by the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals refer to like structural elements, and wherein:

[0018] Figure 1A Plots of thermal and electrical conductivity versus yield strength and hardness for various metallic materials are shown.

[0019] Figure 1B A graph of thermal conductivity and tensile strength of a nanotwinned metal alloy material is shown.

[0020] Figure 2A A scanning electron micrograph of a cross-section of a nanotwinned metal alloy material is shown.

[0021] Figure 2B A scanning electron micrograph of a cross-section of a nanotwinned metal alloy material is shown.

[0022] Figure 3A A scanning electron micrograph of a cross-section of a nanotwinned metal alloy material is shown.

[0023] Figure 3B A scanning electron micrograph of a cross-section of a nanotwinned metal alloy material is shown.

[0024] Figure 4 Plots of hardness and conductivity versus at%-Ag for nanotwinned metal alloy materials are shown.

[0025] Figure 5A A co-sputtering PVD system for forming nanotwinned metal alloy materials is shown.

[0026] Figure 5B A process flow diagram illustrating a process for forming a nanotwinned metal alloy material.

[0027] Fig. 6A A schematic diagram of a system for forming nanotwinned metal alloy materials is shown.

[0028] Figure 6B A process flow diagram illustrating a process for forming a nanotwinned metal alloy material.

[0029] Fig. 7A A schematic diagram of a system for forming nanotwinned metal alloy materials is shown.

[0030] Figure 7B A process flow diagram illustrating a process for forming a nanotwinned metal alloy material.

[0031] Fig. 8A A schematic diagram of a system for forming a component including a nanotwinned metal alloy material is shown.

[0032] Figure 8B Shows the use of Fig. 8A A system for forming a stage in a process of comprising a component of a nanotwinned metal alloy material.

[0033] Figure 8C A component comprising a nanotwinned metal alloy material is shown.

[0034] Fig.9A Stages of a process for forming a component comprising nanotwinned metal alloy material are shown.

[0035] Fig. 9B A schematic diagram of a system for forming a component including a nanotwinned metal alloy material is shown.

[0036] Fig. 9C A schematic diagram of a system for forming a component including a nanotwinned metal alloy material is shown.

[0037] Fig.10 A process flow diagram illustrating a process for forming a component including nanotwinned metal alloy material.

[0038] Fig.11A A perspective view of an electronic device is shown.

[0039] Fig. 11B Shows Fig.11A An exploded view of the electronic equipment.

[0040] Fig. 12A A perspective view of an electrical connector for an electronic device is shown.

[0041] Fig. 12B shows the arrangement before connection Fig. 12A A perspective view of an electrical connector.

[0042] Fig. 12C Shown in a connected arrangement Fig. 12A A cross-sectional view of an electrical connector.

[0043] Fig.13A A perspective view of electronic components of an electronic device is shown.

[0044] Fig. 13B is shown arranged to receive another electronic component Fig.13A Cross-sectional view of an electronic component.

[0045] Fig. 13C shows receiving another electronic component Fig.13A Cross-sectional view of an electronic component.

[0046] Fig.14 A perspective view of electronic components is shown.

[0047] Fig.15A A cross-sectional view of an electronic device is shown.

[0048] Fig. 15B Shows Fig.15A Cross-sectional view of an electronic device.

[0049] Fig.16 Components of an electronic device are shown.

[0050] Fig.17A A perspective view of components of an electronic device is shown.

[0051] Fig. 17B Shows Fig.17A Another perspective view of the components of the .

[0052] Fig.18A A perspective view of an electronic device is shown.

[0053] Fig.18B Shows Fig.18A A perspective view of components of an electronic device.

[0054] Fig.19A A perspective view of an electronic device and accessory components is shown.

[0055] Fig.19B Shows Fig.19A Side view of the electronic equipment and accessory components.

[0056] Fig.19C Shows Fig.19A Cross-sectional view of an accessory component.

[0057] Fig. 20A A perspective view of a battery is shown.

[0058] Fig. 20B Shows Fig. 20A A cross-sectional view of a battery.

[0059] Fig. 20C Shows Fig. 20A Schematic diagram of a portion of a battery. DETAILED DESCRIPTION

[0060] Reference will now be made specifically to the representative embodiments shown in the accompanying drawings. It should be understood that the following description is not intended to limit the embodiments to a preferred embodiment. On the contrary, the following description is intended to cover alternatives, modifications and equivalents that may be included in the spirit and scope of the embodiments defined by the appended claims.

[0061] In some examples, the metallic material may include grains, and at least 90% of the grains may have nanotwin boundaries therein. In addition, the metallic material may include a copper (Cu) and silver (Ag) alloy between about 0.5 atomic percent (at%) silver and 2at% silver. Within the grains, the nanotwin boundaries may be spaced apart from each other by between about 2 nanometers (nm) and about 5nm. According to some examples, the battery may include a plurality of lithium-ion electrochemical cells, each of which has an anode, a cathode, a separator, and an electrolyte. A conductive current collector may be electrically coupled to the anode and cathode of each cell. Nanotwinned metal materials such as nanotwinned metal copper foil having a thickness greater than about 50 microns may be used as a current collector, and active materials of the anode and / or cathode may be deposited onto the nanotwinned metal foil to form the anode and / or cathode.

[0062] Typically, in electronic components that require high levels of electrical and thermal conductivity, pure metallic materials with naturally high bulk electrical and thermal conductivity, such as copper or silver, may be used. However, in some applications, these high conductivity materials may also be desired to have high levels of other material properties, such as high strength that may allow the material to provide mechanical support or have other functions in the electronic component or device.

[0063] For example, pure copper has extremely high thermal and electrical conductivity, allowing for efficient transfer of heat or electrical power or signals through the material. However, copper has a relatively low yield strength, and it can be difficult to achieve a desired level of mechanical strength in a component that includes pure copper. Alloying elements in copper can increase strength but generally reduce the thermal and electrical conductivity of the copper material. Therefore, depending on the material's use, a balance must be struck between the amount and type of alloying elements added to pure copper to achieve adequate thermal and electrical conductivity as well as material hardness and yield strength for a particular application.

[0064] In addition to utilizing alloying elements in copper or other conductive metals, it may also be desirable to use materials with a crystal structure in electronic components that have features that hinder dislocation movement but do not hinder the flow of electrons. One such feature is called a twin boundary. Twin boundaries occur when two crystals (e.g., two regions of a grain of a metallic material) share the same lattice points in a symmetrical but not identical manner. These twin boundaries can prevent dislocation movement, thereby resulting in increased material strength, but since the same lattice points are shared along the boundary, the twin boundaries do not substantially affect the conduction of heat or electrical energy across the boundary. Typically, metallic materials do not include a high percentage of twin boundaries. However, in some examples, and as described herein, a metallic material including a high percentage of twin boundaries may be formed, wherein a large number of grains in the material include multiple twin boundaries, and wherein the boundaries themselves are separated by a distance of about tens or hundreds of nanometers (nm). These materials may be referred to as nanotwin materials, nanotwin metals, and / or nanotwin alloys, and the boundaries themselves may be referred to as nanotwin boundaries when separated by a distance of about nanometers.

[0065] In the examples of materials described herein, it may be advantageous to combine the material strength and hardness advantages of the addition of alloying elements with the nanotwin boundaries described above, which promote strength and hardness with minimal penalty to the thermal and electrical conductivity of the material. Such materials, referred to herein as "nano-twinned metal alloy materials," may allow for novel component and device designs that take advantage of these improved material properties.

[0066] For example, manufacturing large quantities of nanotwinned metal alloy materials (such as nanotwinned Cu-Ag alloys) in rolls having a thickness greater than 50 μm can allow the nanotwinned metal alloy materials to replace existing metal materials and alloys in component and equipment manufacturing processes without significant or expensive modifications. In some examples, and as described herein, the nanotwinned metal alloy materials can be co-sputtered, electrodeposited, or electroformed into a desired shape and desired thickness, such as greater than about 50 microns and up to several millimeters, during a PVD process. In some examples, foils or films of nanotwinned metal alloy materials can be formed by roll-to-roll or conductive drum electrodeposition processes. In addition, electroforming nanotwinned Cu-Ag alloys or other nanotwinned metal alloy materials allows for the formation of complex components that may have well-defined edges and features, but can be formed into shapes that may have originally required techniques such as deep stamping to produce, such techniques typically resulting in less well-defined edges and features, and can increase post-processing costs or reduce component performance.

[0067] The improved material properties (such as strength, hardness, electrical conductivity, and thermal conductivity) of nanotwinned metal alloy materials relative to non-nanotwinned metal materials and / or non-alloyed metal materials can also enable new component and device designs that utilize these improved material properties. For example, components that conduct or transmit electrical power can have smaller sizes because the mechanical strength of the metal portions of these components may no longer constrain the design. In addition, even if these components have reduced sizes, the high level of electrical conductivity provided by the nanotwinned metal alloy materials can allow efficient power or signal transmission. For example, the use of highly conductive nanotwinned metal alloy materials in multiple components or locations along the charging path of an electronic device can result in compounding efficiencies that allow for reduced charging times, increased battery life, and other advantages, as described herein.

[0068] References below Figures 1A to 20C These and other embodiments are discussed. However, those skilled in the art will readily appreciate that the detailed description given herein with respect to these drawings is for illustrative purposes only and should not be interpreted as limiting.

[0069] Figure 1A A graph of thermal and electrical conductivity versus yield strength and hardness is shown for various metallic materials. Three important design properties of materials that form components of electronic devices, especially those that require or transmit power or signals, are yield strength, thermal conductivity, and electrical conductivity. Figure 1A As can be seen in , the yield strength of a material is related to its hardness. The thermal conductivity of a metallic material is also generally related to its electrical conductivity. Without being bound by any one theory, this may be because the thermal and electrical conductivity of a material are related by similar physical mechanisms. Although it is desirable that the material forming the electronic component has high thermal conductivity, high electrical conductivity, and high yield strength, as shown in Figure 1AIt can be seen that the thermal conductivity and electrical conductivity of a material tend to decrease as the hardness or yield strength of the material increases.

[0070] Figure 1A The thermal conductivity, electrical conductivity, hardness and yield strength of one such material, nanotwinned copper-silver (Cu-Ag) alloy 100a, 100b are shown. Figure 1A Two regions 100a, 100b are identified in order to illustrate the Cu-Ag alloy formed using two different processes, because the processes used to form the nanotwinned Cu-Ag alloy may result in different thermal conductivity, electrical conductivity, hardness, and yield strength of the alloy. For example, these material properties of the nanotwinned Cu-Ag alloy formed by a physical vapor deposition (PVD) process 100a (such as co-sputtering) may be different from the properties of the Cu-Ag alloy formed by the electroplating process 100a.

[0071] In either case of 100a, 100b, it can be seen that the nanotwinned Cu-Ag alloy has a thermal and electrical conductivity level that is relatively close to that of pure copper, while having a hardness and yield strength that is significantly higher and equivalent to alloy materials with significantly lower electrical and thermal conductivity. This desired combination of material properties can allow the following components to support other components or otherwise perform structural functions: efficiently provide or transmit heat or electrical power or signals, and can also be designed as components that carry or withstand relatively large mechanical loads. The combination of high strength and high conductivity means that a relatively small amount of nanotwinned metal alloys (such as the nanotwinned Cu-Ag alloy described herein) can be used to achieve the desired level of conductivity, while ensuring that such a reduction in the amount of material or a reduction in the size of the component does not result in the component being too weak to withstand typical use with demanding requirements.

[0072] In some examples, the nanotwin metal alloy materials described herein may include copper, silver, cobalt, an alloy of copper and cobalt, and / or an alloy of copper and silver. For example, a nanotwin metal alloy material, such as a Cu-Ag alloy, may include Ag between 0.25 atomic % (at%) and 2at%, such as Ag between 0.5at% and 2at%, as shown in the example given in Figure 1. In at least one example, the nanotwin metal alloy material may include greater than 2at% Ag, such as at least 2.5at% Ag, at least 3at% Ag, at least 3.5at% Ag, and at least 4at% Ag. Generally, the at% Ag described in the nanotwin metal alloy materials described herein may be selected to achieve favorable electrical and thermal conductivity as well as material strength and hardness for electronic component applications described in more detail below. In addition, the nanotwin Cu-Ag alloy may include the above-mentioned at% Ag, and the balance of the alloy may be Cu, excluding any impurities. In some examples, the nanotwinned Cu-Ag alloy may include the above at% Cu, and the balance of the alloy may be Ag, excluding any impurities. In some examples, the Cu, Ag, and / or Cu-Ag alloy may include less than about 5 at%, less than about 2 at%, less than about 1 at%, less than about 0.1 at%, or less than about 0.01 at% impurity elements. The term "impurity or impurity element" may be used herein to refer to any element or elements that are not Cu or Ag.

[0073] Thus, in some examples, the nanotwinned Cu-Ag alloys as described herein may have a yield strength greater than about 800 megapascals (MPa). In some examples, the nanotwinned Cu-Ag alloys may have a yield strength between about 800 MPa and about 1500 MPa. For example, the nanotwinned Cu-Ag alloys may have a yield strength greater than about 900 MPa, greater than about 1000 MPa, greater than about 1100 MPa, greater than about 1200 MPa, greater than about 1300 MPa, greater than about 1400 MPa, or greater than about 1500 MPa or more.

[0074] In some examples, a nanotwinned Cu-Ag alloy as described herein can have a Vickers pyramid hardness value (Hv) or hardness greater than about 330. In some examples, the nanotwinned Cu-Ag alloy can have a hardness between about 330 Hv and about 625 Hv. For example, the nanotwinned Cu-Ag alloy can have a hardness greater than about 330 Hv, greater than about 400 Hv, greater than about 450 Hv, greater than about 500 Hv, greater than about 550 Hv, greater than about 600 Hv, or greater than about 625 Hv or more.

[0075] In some examples, the nanotwinned Cu-Ag alloys as described herein may have an electrical conductivity greater than about 30% of the International Annealed Copper Standard Value (% IACS). In some examples, the nanotwinned Cu-Ag alloys may have an electrical conductivity between about 30% IACS and about 85% IACS. For example, the nanotwinned Cu-Ag alloys may have an electrical conductivity greater than about 30% IACS, greater than about 40% IACS, greater than about 50% IACS, greater than about 60% IACS, greater than about 70% IACS, greater than about 80% IACS, greater than about 85% IACS, or greater than about 90% IACS or more.

[0076] In some examples, a nanotwinned Cu-Ag alloy as described herein may have a thermal conductivity greater than about 120 Watts / meter·Kelvin (W / m·K). In some examples, the nanotwinned Cu-Ag alloy may have a thermal conductivity between about 120 W / m·K and about 360 W / m·K. For example, the nanotwinned Cu-Ag alloy may have a thermal conductivity greater than about 120 W / m·K, greater than about 160 W / m·K, greater than about 200 W / m·K, greater than about 240 W / m·K, greater than about 280 W / m·K, greater than about 320 W / m·K, or greater than about 360 W / m·K or more.

[0077] In some examples, a nanotwinned Cu-Ag alloy as described herein may have an average grain size between 0.05 microns and 5 microns, between 0.1 microns and 1 micron, between 0.2 microns and 0.8 microns, between 0.3 microns and 0.7 microns, or between 0.4 microns and 0.6 microns, for example, about 0.5 microns.

[0078] In some examples, the nanotwinned Cu-Ag alloys as described herein may have an elongation between 0.1% and 10%, between 0.5% and 5%, or between 1% and 4%, such as about 2% or about 3%. However, in some examples, the nanotwinned Cu-Ag alloys as described herein may have an elongation greater than 10%, such as about 12%, 15%, 17%, or more.

[0079] In some examples, the nanotwinned Cu-Ag alloys as described herein may include a relatively low percentage of contaminant atoms or elements. As used herein, the term "contaminant element" may refer to any element other than copper and / or silver, such as sulfur. In some examples, the nanotwinned Cu-Ag alloys may include less than 100 parts per million (ppm) sulfur, less than 75 ppm sulfur, less than 50 ppm sulfur, less than 25 ppm sulfur, less than 20 ppm sulfur, less than 15 ppm sulfur, less than 10 ppm sulfur, less than 5 ppm sulfur, or even less than 1 ppm sulfur.

[0080] Figure 1B Exemplary thermal conductivity and tensile strength of metallic materials (including nano twinned copper-cobalt (Cu-Co) alloys) are shown. In some examples, the manufacturing process of films, foils, and components incorporating such materials may include sputtering or electroplating. In some examples, electroplating may include a carrier or substrate at least partially immersed in an electrolyte solution. The electrolyte solution may include 20 mL / L of an aqueous solution of copper sulfate (CuSo4), an aqueous solution of cobalt sulfate (CoSO4), hydrochloric acid (HCl), and / or a Cheerleader DP-101L additive. The electrolyte may include approximately 0.06 M to 1.0 M of CuSo4 and CoSO4 between approximately 0.1 M and approximately 0.5 M. The current density of electroplating may include between approximately 12 amperes per square decimeter (ASD) and 18 ASD. In one example, the electrolyte may include approximately 0.8 M of CuSo4 and CoSO4 between approximately 0.1 M and approximately 0.5 M. The current density of electroplating in this example may include approximately 15 amperes per square decimeter (ASD).

[0081] like Figure 1B As can be seen in the graph, the resulting nano twinned Cu-Co alloy has a thermal conductivity level that is relatively close to pure copper. However, the alloy also has significantly higher tensile strength and is similar to other industrial alloying materials with lower thermal conductivity. This combination of material properties provided by the Cu-Co alloy can allow the following components to support other components or otherwise perform structural functions: efficiently provide or transmit heat or electrical power or signals, and can also be designed to carry or withstand relatively large mechanical loads. In addition, the molar concentration of cobalt in the electrolyte solution increases and reduces conductivity. As expected, the increased concentration reduces the conductivity with a slope similar to that of industrial alloying materials.

[0082] In some examples, adding Co to form a Cu-Co alloy can increase strength without reducing tensile elongation. In some examples, similar to Cu-Ag alloys, nanotwinned Cu-Co alloys as described herein can have an elongation between 0.1% and 10%, between 0.5% and 5%, or between 1% and 4%, such as about 2% or about 3%. In some examples, nanotwinned Cu-Co alloys as described herein can have an elongation greater than 10%, such as about 12%, 15%, 17%, or more.

[0083] In some examples, other nanotwinned metal alloy materials may be included. Copper-nickel (Cu-Ni) alloys, copper-tin (Cu-Sn) alloys, copper-zinc (Cu-Zn) alloys may also provide copper alloy films with high strength and high conductivity, and are suitable for forming components and / or electronic devices. For additional examples and explanations described herein, the present systems and methods are described with reference to nanotwinned Cu-Ag alloys as exemplary alloys, although the teachings may be equally applicable to other alloys disclosed herein.

[0084] In general, nanotwinned metal alloys (such as the nanotwinned Cu-Ag alloys described herein) can be used to produce nanotwinned alloy materials with improved strength while only minimally affecting conductivity, as described above. To generally illustrate nanotwinned alloy material properties, FIG. 2A to FIG. 3B The nanotwin structure of the Cu-Ag alloy substrate is shown.

[0085] Figure 2A A scanning electron micrograph of a cross-section of a nanotwinned Cu-Ag alloy material 200 having an Ag content of about 1.0 at % is shown. The materials and alloys described herein are not limited to Figure 2A The Cu-(1.0)Ag alloy shown in , and may include other ranges of at%-Ag, as described elsewhere herein. As described above, a nanotwinned copper-cobalt (Cu-Co) alloy may be included. The nanotwinned Cu-Co alloy is composed of many grains. Cobalt refines the grain size, which enhances the strength of the material. In some examples, the size of the grains comprising the metallic material may be relatively uniform, or may vary from small to large, depending on the manner in which the material is formed and / or processed. In some examples, the nanotwinned Cu-Co alloy as described herein may have an average grain size between 0.2 microns and 0.5 microns, between 0.2 microns and 0.4 microns, and between 0.2 microns and 0.3 microns. For example, the average grain size of the nanotwinned Cu-Co alloy may be about 0.25 microns.

[0086] The nanotwinned Cu-Ag alloy 200 is also composed of a plurality of grains, such as grains 201 that together form the Cu-Ag alloy material 200. In some examples, the grains of the metal material may be columnar, for example, Figure 2A As shown, or may be substantially equiaxed. It can be seen that the grains 201 have a regular repeating stripe-like pattern, which is due to the presence of repeating twin boundaries or nanotwins, as described herein. In at least one example, the grains 201 can be columnar grains between about 5nm and 80nm wide, or between about 10nm and 50nm wide, such as between about 20nm and 60nm wide. In one example, the inclusion of cobalt to form a Cu-Co alloy material disrupts the crystal orientation of the grains, which increases ductility.

[0087] In some examples, substantially all or 100% of the grains of the metallic material may include a plurality of nanotwins. In some examples, greater than 50%, greater than 60%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, greater than 91%, greater than 92%, greater than 93%, greater than 94%, greater than 95%, greater than 96%, greater than 97%, greater than 98%, or greater than 99% or more of the grains of the metallic material may include a plurality of nanotwins.

[0088] Figure 2B Shows Figure 2A A scanning electron micrograph of a portion of a nanotwinned Cu—Ag alloy material 200 is shown. Figure 2B The magnification of the micrograph is higher than Figure 2A 2 and 3. The first grain 201 includes a plurality of twin boundaries spaced between about 2 nm and 5 nm from each other. In some examples, the grains of the nanotwinned metal alloy (such as the nanotwinned Cu-Ag alloy material 200 described herein) may include twin boundaries spaced less than about 100 nm, less than about 75 nm, less than about 50 nm, less than about 25 nm, less than about 20 nm, less than about 15 nm, less than about 10 nm, less than about 5 nm, or less than about 2 nm, or less.

[0089] For example, the grain 201 includes a twin boundary 212 between a first region 210 of the grain having a first lattice arrangement (shown here in light gray) and a second region 211 of the grain, the first region having a first lattice arrangement (shown here in light gray), and the second region sharing the same lattice points as the first region 210 along the boundary 212. However, the second region 211 has a symmetrical second lattice arrangement, shown here in dark gray. In some examples, the different lattice arrangements of the regions sharing the twin boundary can be envisioned as mirror images of each other.

[0090] In some examples, nanotwinned metallic materials, such as the nanotwinned Cu-Ag alloy materials described herein, when formed, may have a thickness greater than 1 micron, greater than 10 microns, greater than 25 microns, greater than 50 microns, greater than 75 microns, greater than 100 microns, greater than 125 microns, greater than 150 microns, greater than 200 microns, greater than 250 microns, greater than 500 microns, greater than 1000 microns, 2000 microns, 3000 microns, 5000 microns, or even thicker. Thus, although manufacturing and processing processes may result in portions of the nanotwinned metallic materials having thicknesses less than those described herein, the nanotwinned metallic materials may be formed to have the thicknesses described.

[0091] Figure 3AA scanning electron micrograph of a cross-section of a nanotwinned Cu-Ag alloy material 300 is shown. The nanotwinned Cu-Ag alloy 300 is composed of a plurality of grains, such as grains 301 that together form the nanotwinned Cu-Ag alloy material 300. In some examples, the size of the grains comprising the metallic material can be relatively uniform, or can vary from small to large, depending on the manner in which the material is formed and / or processed. In some examples, the grains of the metallic material can be equiaxed or substantially equiaxed. It can be seen that the grains 301 have a regular, repeating, striped pattern, which may be due to the presence of repeated twin boundaries or nanotwins, as described herein.

[0092] Figure 3B Shows Figure 3A A scanning electron micrograph of a portion of copper material 300 is shown. Figure 3B The magnification of the micrograph is higher than Figure 3A 301 and an adjacent second grain 302 are shown. The grains 302 include a plurality of twin boundaries spaced between about 2 nm and 5 nm from each other. In some examples, the grains of a nanotwinned metal alloy (such as the nanotwinned Cu-Ag alloy material 200 described herein) may include twin boundaries spaced less than about 100 nm, less than about 75 nm, less than about 50 nm, less than about 25 nm, less than about 20 nm, less than about 15 nm, less than about 10 nm, less than about 5 nm, or less than about 2 nm or less from each other.

[0093] For example, the grain 302 includes a twin boundary 312 between a first region 310 of the grain having a first lattice arrangement (shown here in light grey) and a second region 311 of the grain, the first region having a first lattice arrangement (shown here in light grey), the second region sharing the same lattice points as the first region 310 along the boundary 312. However, the second region 311 has a symmetrical second lattice arrangement, Figure 3B 301, 302. In some examples, different lattice arrangements of regions sharing a twin boundary may be envisioned as mirror images of each other. In some examples, and as shown, the grains 301, 302 may have similar shapes or different shapes. For example, grain 302 is relatively equiaxed, slightly larger in one lateral dimension, while grain 301 is relatively columnar. The degree of uniform equiaxation of the grains of the nanotwinned Cu-Ag alloy material 300 or the distribution of equiaxation and columnarity may be selected by adjusting the process conditions used to form the nanotwinned Cu-Ag alloy material 300, as described herein.

[0094] In some examples, and as further described herein, alternating current, direct current, and / or pulsed direct current may be applied to the deposition cell to form the nanotwinned Cu-Ag alloy material 300. In some examples, one or more variables of the current may be selected to control the degree to which the grains of the nanotwinned copper 300 are equiaxed, columnar, and / or the desired amount or distribution of equiaxed and columnar shapes, including pulse duration, pause duration, direct current duration, and / or the ratio of pulse current time or number of guided cycles and / or alternating current time. FIG. 3A to FIG. 3B In the particular example shown, nanotwinned copper 300 may be formed by a deposition process as described herein that includes direct current pulses of approximately 5 milliseconds (ms) at approximately 50 amps / square decimeter (ASD) with a pause of 20 ms between each pulse.

[0095] Figure 2A and Figure 2B The nanotwinned Cu-Ag alloy material 200 shown includes an alloy having 1 at%-Ag, and Figure 3A and Figure 3B The nanotwinned Cu-Ag alloy material 300 shown includes an alloy having 0.87 at%-Ag. As described above, the at% Ag in the alloys described herein can vary. The manufacturing processes for films, foils, and components incorporating such materials can also vary, as will be described in more detail below. In general, it is noted here that these processes can include electroplating processes and / or PVD processes. In at least one example, after the nanotwinned Cu-Ag alloy material described herein is formed, the material can then be subjected to an annealing process. For example, Figure 3A and Figure 3B The nanotwinned Cu-Ag alloy material 300 shown in FIG. 1 is formed using a co-sputtering PVD process followed by annealing. Figure 2A and Figure 2B The nanotwinned Cu—Ag alloy material 200 shown in FIG. 2 is formed using a co-sputtering PVD process without a subsequent annealing step.

[0096] In at least one example, Figure 3A and Figure 3B The annealing process used on the nanotwinned Cu-Ag alloy material 300 shown in includes subjecting the nanotwinned Cu-Ag alloy material 300 to a temperature of 200 degrees Celsius for one hour under a protective argon atmosphere. In at least one example, the alloy material described herein may be subjected to 200 degrees Celsius for 5 hours or longer. Longer annealing times may result in improved thermal stability of the material.

[0097] Along these lines, Figure 4A graph showing the effect of the amount of Ag and annealing on the hardness and conductivity of the alloy material. It is known that pure Cu with a fine nanostructure will coarsen even when stored at room temperature, resulting in a decrease in strength. This can be seen in Figure 4 As can be seen in the graph, the hardness of the samples subjected to one hour at 200 degrees Celsius for alloys with less than 0.5 at%-Ag decreases. In addition, as shown in the figure, the same annealing conditions help stabilize the fine microstructure of the alloy material with more than 0.5 at%-Ag and prevent coarsening. As shown in the figure, annealing at 200 degrees Celsius for one hour does not reduce the hardness of the Cu-Ag alloy with more than 0.5 at%-Ag. In addition, in at least one example, this annealing step can increase conductivity.

[0098] As described above, multiple processes can be used to form foils, films, and components incorporating the nanotwin metal materials described herein. At least two of these processes may include a co-sputtering PVD process and an electroplating process. Along these lines, FIG. 5 shows a schematic diagram of a system 500 for forming a nanotwin metal alloy (such as the nanotwin Cu-Ag alloy material described herein). In some examples, the system 500 may include a carrier or substrate 512, such as a silicone substrate, provided with an anode 522, and target materials 514a, 514b, and 514c provided with corresponding cathodes 516a, 516b, and 516c. In some examples, the substrate 512 may take any shape so that the metal film formed thereon within the system 500 may form a corresponding shape as desired. In one example, two of the target materials 514a, 514b, and 514c may include a Cu target, and one of the target materials 514a, 514b, and 514c may include an Ag target. An inert sputtering gas 518 , such as argon, may be used between the cathodes 516 a , 516 b , 516 c and the anode 522 .

[0099] Using this system, and in at least one example, a material thickness of about 600 nm to about 1100 nm is achieved using a target deposition rate of 2 nm / s to 4 nm / s. In a first step of a co-sputtering process using system 500, a pressure between about 1.1 mTorr and 15 mTorr is used, and the power of the Cu target is between about 250 watts (W) and 460 W, wherein the power of the Ag target is between about 0 W and 15 W. In a second step, a pressure of about 1.1 mTorr is used, and the power of the Cu target is between about 300 watts (W) and 430 W, wherein the power of the Ag target is between about 0 W and 15 W. In at least one example, these steps using a system similar to system 500 can produce a set of nanotwinned Cu-Ag alloy material samples having between 0 at%-Ag and 2 at%-Ag in the alloy.

[0100] Along these lines, Figure 5B As shown, at least one example of a method 550 for forming a nanotwinned Cu-Ag alloy material, such as those described herein, includes placing a carrier within a co-sputtering PVD system at block 552. This system may be used with Figure 5A In at least one example, method 550 may include applying a voltage between a cathode and an anode of a PVD system at block 554. In at least one example, method 550 may include depositing a nanotwinned Cu-Ag alloy film onto a support at block 556, wherein at%-Ag is between about 0.5 and 2.

[0101] Fig. 6A A schematic diagram of a system 600 for forming a nanotwinned metal alloy material 601 (such as the nanotwinned Cu-Ag alloy described herein) using an electroplating process is shown. In some examples, the system 600 may include a carrier or substrate 612, which may be fed by any number of rollers, wheels, reels, or other devices or mechanisms for moving and / or supporting the carrier 612, and pass between the above-mentioned components or devices or mechanisms. In some examples, the carrier 612 may be a sheet or film of material. In some examples, the carrier 612 may include a polymer material, a ceramic material, or a combination thereof. In some examples, the carrier 612 may be flexible and may be rolled up or stored in other compact manners, then unwound and fed through the system 600. In some examples, the carrier 612 may be conductive or may include a conductive material. In this example, the carrier 612 may be wound around the first reel 610, whereby the carrier, once the nanotwinned Cu-Ag alloy material is formed on the carrier, passes under or otherwise interacts with a roller or support member (such as roller 626) before being wound around the second reel 660. Thus, in use, the carrier 612 may be fed from the first reel 610 to the second reel 660 during deposition of the nanotwinned Cu-Ag alloy material 601. The presently illustrated system 600 is only one example of a system for forming the nanotwinned metal alloy material 601, and such a system may have any geometry or configuration as desired.

[0102] In some examples, the carrier 612 may be fed from the first reel 610 into a deposition tank, bath, or chamber 620. In some examples, the deposition bath 620 may be an electrodeposition or electroplating bath 620. Thus, in some examples, the deposition bath 620 may contain an electrolyte solution 624 and may include one or more anodes 622 at least partially immersed in the electrolyte solution 624. During the nanotwinned metal alloy material 601 deposition process, an electric current may be provided to the anode 622 immersed in the electrolyte solution 624, wherein the carrier 612 acts as a cathode in the deposition cell. In some examples, the electrolyte solution 624 contains dissolved cations of one or more metals to be deposited on the carrier 612. For example, in the case where a nanotwinned Cu-Ag alloy is deposited, the electrolyte solution 624 may include copper cations and silver cations.

[0103] In at least one example, the electrolyte solution 624 may include a Cu ion source such as CuSO4 and / or Cu(NO3)2, and the Ag ion source may include a component such as AgNO3. In at least one example, additional chemical additives may be added to the electrolyte solution 624 with functions such as accelerators (to improve grain structure), inhibitors (to improve plating uniformity and select specific grain orientations), and wetting agents (to remove H2 bubbles from the surface).

[0104] In some examples, the electrolyte solution 624 may include other component materials, such as associated anions, one or more inhibitors, and / or components for adjusting the properties of the solution, such as viscosity or pH. In some examples, the inhibitor may be any component that can prevent or inhibit the formation of a deposition hotspot area on the surface of the carrier. That is, the location of the deposition material can be preferentially deposited compared to other surface locations. Therefore, in some examples, the inhibitor may allow relatively uniform deposition on the entire impregnated surface of the carrier 612. In some examples, the inhibitor may include a water-soluble monomer or copolymer. In some examples, the inhibitor may include one or more polymer compounds, such as polyethylene glycol (PEG) or bis (3-sulfopropyl) disulfide (SPS). In some examples, other compounds or elements may be used as inhibitors, such as chloride ions (Cl-).

[0105] In some examples, the electrolyte solution may include Cu ions as cations, such as Cu 2+ ions. In some examples, the corresponding anions may include SO4 2- ions or any other ions. In some examples, the electrolyte solution may include compounds such as H2SO4 or other components to adjust the pH of the solution or to contribute anions. In some examples, the electrolyte solution may include components such as one or more deposition promoters and wetting agents.

[0106] In some examples, the electric current promotes a reduction reaction that deposits or electroplates the metal cations onto the carrier 612 in the form of a nanotwin metal alloy material 601. In addition, as the carrier 612 is fed from the first reel 610 to the second reel 630 through the electroplating bath 620, the nanotwin metal alloy material 601 is gradually deposited to a desired thickness over the length of the carrier 612. Thus, the system 600 can be used to form a foil, sheet, or film of the nanotwin metal alloy material 601 on the carrier 612. In some examples, the thickness of the deposited nanotwin metal alloy material 601 can be from about 4 microns to up to several millimeters, such as less than about 10 microns, at least about 50 microns, or even up to about 10 mm. In some examples, the thickness of the nanotwin metal alloy material 601 can be substantially uniform across the carrier 612. However, in some examples, the thickness of the deposited nanotwin metal alloy material 601 can vary over the length and width of the carrier 612 as desired.

[0107] Figure 6B A process flow diagram of an exemplary process 700 for depositing or forming a nanotwinned metal material as described herein, such as nanotwinned metal material 601 deposited onto a carrier 612 by system 600, is shown. The process 700 for depositing the nanotwinned metal material may be an electrodeposition or electroplating process and may include: at block 710, immersing the carrier in an electrolyte solution; at block 720, applying a voltage to a deposition cell including the carrier and the electrolyte solution; and at block 730, depositing a nanotwinned metal alloy material, such as a nanotwinned Cu-Ag alloy material, onto the carrier to a desired thickness, such as 1 micron to 5 microns, 5 microns to 10 microns, 10 microns to 20 microns, 20 microns to 50 microns, or a thickness greater than about 50 microns.

[0108] At block 710, a carrier is at least partially immersed in an electrolyte solution. In some examples, this may include placing the carrier (e.g., relative to Fig. 6A The support 612 shown is at least partially immersed in an electrolyte solution that includes cations of the metal to be deposited or formed. In some examples, such as Fig. 6A As shown, the support may be at least partially immersed in the electroplating bath, but any suitable immersion technique and electrolyte solution container may be used.

[0109] At block 720, a voltage is applied to a deposition cell including a support and an electrolyte solution. In some examples, the deposition cell may include a cathode (such as a support) on which the nanotwinned metal alloy material is to be deposited, an electrolyte solution, and an anode. For example, Fig. 6AAs shown, the deposition cell may include a carrier 612, a deposition bath 620 including an electrolyte solution 624, and an anode 622. The voltage may drive alternating current or direct current, and may be applied so as to achieve a desired current density or current density range at the carrier. In some examples, such as when direct current is applied or driven to the deposition cell, the current density at one or more locations on the carrier where the nanotwin metal alloy material is deposited may be from about 1 ampere per square decimeter (ASD) to about 500 ASD. In some examples, the current density at the location where the nanotwin metal material is deposited on the carrier may be greater than or equal to about 10 ASD, greater than or equal to about 50 ASD, greater than or equal to about 100 ASD, greater than or equal to about 250 ASD, or greater than or equal to about 500 ASD or greater. In some examples, the current density may be about 12 ASD.

[0110] In some examples, an alternating current or a pulsed direct current may be applied to the deposition cell. In some examples where a pulsed current is applied to the deposition cell, the current density at the location where the nanotwinned metal material is deposited on the carrier may be between about 1 ASD and about 500 ASD during the pulse. For example, the current density at the location where the nanotwinned metal material is deposited on the carrier may be greater than or equal to about 1 ASD, greater than or equal to about 10 ASD, greater than or equal to about 50 ASD, greater than or equal to about 100 ASD, greater than or equal to about 250 ASD, or greater than or equal to about 500 ASD or greater. In some examples, the current density may be about 80 ASD during the pulse.

[0111] In some examples, one or more pulses of the pulsed current may have a duration between 2 milliseconds (ms) and about 500 ms. For example, one or more pulses of the pulsed current may have a duration greater than or equal to about 2 ms, greater than or equal to about 50 ms, greater than or equal to about 100 ms, greater than or equal to about 250 ms, or greater than or equal to about 500 ms or longer. In some examples, one or more pulses may have a duration of about 3 ms. In some examples, one or more durations between pulses may remain the same between each pulse, or may vary as the deposition process is performed. For example, the duration between each pulse may be 10 ms to about 3000 ms. In some examples, the duration between pulses may be greater than or equal to 10 ms, greater than or equal to 100 ms, greater than or equal to 500 ms, greater than or equal to 1000 ms, greater than or equal to 2000 ms, or greater than or equal to 3000 ms or longer. In some examples, the duration between pulses may be about 25 ms. Similarly, the pulse time itself may vary throughout the deposition process 700.

[0112] At block 730, a nanotwinned metal alloy material is deposited onto at least a portion of the carrier (e.g., a portion of the carrier immersed in the electrolyte solution) to a certain thickness. In some examples, the nanotwinned metal alloy material may include a Cu-Ag alloy as described herein. In some examples, the nanotwinned metal alloy material may be deposited to a thickness of greater than or equal to about 30 microns, greater than or equal to about 40 microns, greater than or equal to about 50 microns, or greater than or equal to about 100 microns. In some examples, the nanotwinned metal alloy material may be deposited to any desired thickness as described herein.

[0113] Although shown as separate blocks, the deposition of the nanotwinned metal alloy material at block 730 may occur as a result of the voltage applied at block 720, and thus these blocks may not be separate process steps. FIG. 7A to FIG. 7B Further details of systems and processes for forming nanotwinned metallic materials are described.

[0114] Fig. 7A A schematic diagram of a system 800 for forming a nano-twinned metal material 801 is shown. In some examples, the system 800 may include a carrier or substrate 810 that may be at least partially immersed in an electrolyte solution 824 that is contained or otherwise maintained in a deposition tank 820. In some examples, the carrier 810 may include a conductive material, such as a metallic material. In some examples, the carrier 810 may include titanium. In some examples, the carrier 810 may have a substantially cylindrical shape and may take the form of a rotating drum. However, in some examples, the carrier 810 may have substantially any desired shape. In this example, the carrier 810 is partially immersed in the electrolyte solution 824, and may be rotated so that the portion immersed in the electrolyte solution 824 can be removed from the solution, and any nano-twinned metal alloy material 801 deposited thereon can be removed, for example, in a continuous manner. The system 800 currently shown is only one example of a system for forming a nano-twinned metal alloy material 801, and such a system may have any desired geometry or configuration.

[0115] In some examples, the electrolyte solution 824 can be substantially similar to the dielectric solution 624 described herein, and can include some or all of the features of the dielectric solution 624. The deposition bath can also include one or more anodes 822 that can be positioned adjacent to the carrier 810, which can act as a cathode during a deposition process such as an electrodeposition or plating process. In some examples, a voltage or current can be driven through a deposition cell including the anode 822, the electrolyte solution 824, and the carrier 810.

[0116] In some examples, the electric current promotes a reduction reaction that deposits or plates the metal cations onto the carrier 810 in the form of a nanotwin metal alloy material 801. In addition, as the carrier 810 rotates about an axis, the nanotwin metal alloy material 801 is gradually deposited on the impregnated portion of the carrier 810 to a desired thickness. The deposited material 801 can then be removed from the carrier 810, for example as a self-supporting film, foil, or sheet. Thus, the system 800 can be used to form a foil, sheet, or film of the nanotwin metal alloy material 801. In some examples, the thickness of the deposited nanotwin metal alloy material 801 can be from about 4 microns to up to several millimeters, for example up to about 10 mm. In some examples, the thickness of the nanotwin metal alloy material 801 can be substantially uniform when formed. However, in some examples, the thickness of the deposited nanotwin metal alloy material 801 can vary over the length and width of the carrier as desired.

[0117] Figure 7B A process flow diagram of an exemplary process 900 for depositing or forming a nanotwinned metal alloy material as described herein, such as alloy material 801 deposited onto a carrier 810 by system 800, is shown. The process 900 for depositing the nanotwinned metal alloy material may be an electrodeposition or electroplating process and may include: at block 910, applying a voltage to a deposition cell including an at least partially immersed drum; at block 920, depositing the nanotwinned metal alloy material, such as the nanotwinned Cu-Ag alloy material described herein, onto the drum to a desired thickness, such as a thickness greater than about 50 microns; and at block 930, continuously removing the deposited nanotwinned metal alloy material from the drum to form a foil.

[0118] At block 910, a voltage is applied to a deposition cell including a support, such as a metal drum, at least partially immersed in an electrolyte solution. In some examples, the deposition cell may include a drum or other support that acts as a cathode on which the nanotwinned metal alloy material is to be deposited, an electrolyte solution, and one or more anodes. For example, Fig. 7A As shown, the deposition cell may include a drum 810, a deposition bath 820 including an electrolyte solution 824, and an anode 822. The voltage may be applied by driving an alternating current or a direct current, and may be applied to achieve a desired current density or current density range at the support.

[0119] In some examples, such as when direct current is applied or driven to the deposition cell, the current density at one or more locations on the drum where the nanotwin metal alloy material is deposited may be from about 1ASD to about 20ASD. In some examples, the current density at the location where the nanotwin metal alloy material is deposited on the drum may be greater than or equal to about 2ASD, greater than or equal to about 5ASD, greater than or equal to about 10ASD, or greater than or equal to about 15ASD or greater. In some examples, the current density may be about 12ASD. In some examples, alternating current or pulsed direct current may be applied to the deposition cell. In some examples where a pulsed current is applied to the deposition cell, the current density at the location where the nanotwin metal material is deposited on the drum (such as those locations immersed in the electrolyte solution) may be between about 1ASD and about 500ASD during the pulse. For example, the current density at the location where the nanotwinned metallic material is deposited on the support may be greater than or equal to about 1 ASD, greater than or equal to about 10 ASD, greater than or equal to about 50 ASD, greater than or equal to about 100 ASD, greater than or equal to about 250 ASD, or greater than or equal to about 500 ASD or greater. In some examples, the current density may be about 80 ASD during the pulse.

[0120] In some examples, one or more pulses of the pulsed current may have a duration between 2 ms and about 500 ms. For example, one or more pulses of the pulsed current may have a duration greater than or equal to about 2 ms, greater than or equal to about 50 ms, greater than or equal to about 100 ms, greater than or equal to about 250 ms, or greater than or equal to about 500 ms or longer. In some examples, one or more pulses may have a duration of about 3 ms. In some examples, one or more durations between pulses may remain the same between each pulse, or may vary as the deposition process 900 is performed. For example, the duration between each pulse may be 10 ms to about 3000 ms. In some examples, the duration between pulses may be greater than or equal to 10 ms, greater than or equal to 100 ms, greater than or equal to 500 ms, greater than or equal to 1000 ms, greater than or equal to 2000 ms, or greater than or equal to 3000 ms or longer. In some examples, the duration between pulses may be about 25 ms. Similarly, the pulse time itself may vary throughout the deposition process 900.

[0121] At box 920, the nanotwin metal alloy material is deposited onto at least a portion of the drum (e.g., a portion of the drum immersed in the electrolyte solution) to a desired thickness. In some examples, the nanotwin metal alloy material may include copper. In some examples, the nanotwin metal alloy material may include copper, silver, and / or alloys thereof. In some examples, the nanotwin metal alloy material may be deposited to a thickness greater than or equal to about 30 microns, greater than or equal to about 40 microns, greater than or equal to about 50 microns, or greater than or equal to about 100 microns. In some examples, the nanotwin metal alloy material may be deposited to any desired thickness described herein.

[0122] At block 930, any nanotwinned metal alloy material that has been deposited on the drum may be continuously removed from the drum to form a foil or sheet of nanotwinned metal alloy material having a desired thickness. In some examples, the foil or sheet may be self-supporting. That is, the foil of nanotwinned metal alloy material may not require additional carrier or support material to maintain a single continuous foil as it is continuously removed from the drum. FIG. 8A to FIG. 10 Further details of systems and processes for forming nanotwinned metal alloy materials are described.

[0123] Fig. 8A A schematic diagram of a system 1000 for forming (e.g., forming in a desired shape for use as or included in a component of an electronic device) a nanotwin metal alloy material is shown. In some examples, the system 1000 may include a carrier or substrate 1010, which may include a mandrel 1014 having a shape corresponding to the shape of a component including the nanotwin metal alloy material. In some examples, the mandrel 1014 may be immersed in an electrolyte solution 1024 and may be supported by an axis 1012 or other support structure. In some examples, the axis 1012 may raise or lower the mandrel 1014 outside the electrolyte solution 1024. The electrolyte solution 1024 may be substantially similar to the electrolyte solutions described herein (such as solution 624) and may include some or all of the features of the electrolyte solutions described herein. As with the systems 600 and 800 described herein, the electrolyte solution 1024 may be contained in a deposition bath 1020, which may also include one or more anodes 1022 to form a deposition cell. Therefore, in some examples, the system 1000 may be an electroforming system 1000. Mandrel 1014 may include a conductive material, such as a conductive polymer and / or a metallic material.The presently illustrated system 1000 and mandrel 1014 are merely one example of a system for forming a nanotwinned metal alloy component, and such a system may have any geometry or configuration as desired.

[0124] like Figure 8BAs shown, during the deposition process of the nanotwin metal alloy material 1001, an electric current may be provided to an anode 1022 immersed in an electrolyte solution 1024, wherein the mandrel 1014 acts as a cathode. In some examples, the electric current promotes a reduction reaction that deposits or electroplates metal cations onto the mandrel 1014 in the form of a nanotwin metal alloy material 1001 having a shape corresponding to the shape of the mandrel 1014. In some examples, the mandrel may have a shape opposite to the desired shape of the deposited nanotwin metal alloy component 1001. In some examples, the nanotwin metal alloy material 1001 may be deposited onto the mandrel 1014 to a desired thickness. Therefore, the system 1000 can be used to form a component including a nanotwin metal alloy material 1001 having a thickness of about 1 micron or less to up to several millimeters, for example up to about 10 mm. In some examples, the thickness of the nanotwin metal alloy material 1001 may be substantially uniform across the mandrel 1014. However, in some examples, the thickness of the deposited nanotwinned metal alloy material 1001 may vary at various locations on the mandrel 1014 .

[0125] Figure 8C A component 1001 formed of a deposited nanotwinned metal alloy material is shown having a shape corresponding to the shape of a mandrel 1014. As can be seen, the component 1001 may include three-dimensional features. For example, the component 1001 may include a base 1003 having one or more features 1002 extending therefrom. Figure 8C The illustrated component 1001 is only one example of a component that may be formed with the system 1000. Thus, the system 1000 may be used to form components using deposited nanotwinned metal alloy materials having any desired shape or configuration, including complex three-dimensional shapes that may not be formed as a single, continuous body by other deposition processes or manufacturing techniques.

[0126] Fig.9A A cross-sectional view of a portion of a system for forming a nanotwinned metal alloy material is shown. The system may be substantially similar to FIG. 8A to FIG. 8C The system 1000 or a system substantially similar to Figure 5A. In some examples, the system may include a carrier or substrate 1210, which may have a shape corresponding to the shape of a component including a nanotwinned metal alloy material. In some examples, the system may also include one or more masking components, such as components 1211 and 1212. In some examples, component 1211 may include a physical shield that blocks or protects one or more portions of substrate 1210 from being exposed to an electrolyte solution. In some examples, shield 1211 may include a non-conductive material, such as a polymer. In some examples, shield 1211 may include a non-conductive paint or an insulating paint. The system may also include component 1212, which may physically mask a desired area of ​​substrate 1210 and may also control the flow of electrolyte solution around substrate 1210.

[0127] Thus, in some examples, the component 1201 including the nanotwinned Cu-Ag alloy may be deposited on the substrate 1201 such that one or more portions of the component 1201 may be thicker than one or more other portions. For example, as shown, the top portion of the component 1201 may have a thickness of about 140 microns, while the side portions of the component 1201 may have a thickness of about 85 microns. In some examples, one or more surfaces of the component 1201 may have any amount of increased thickness as desired. For example, one or more surfaces of the component 1201 may be 50 microns, 100 microns, 150 microns, or 200 microns or more thicker than one or more other portions of the component 1201.

[0128] Fig. 9B A schematic diagram of a system for forming a plurality of components including nanotwinned metal alloy materials is shown. Fig. 9B The system shown may be substantially similar to FIG. 8A to FIG. 8C The system 1000 described above may include some or all of the features of the system 1000. However, in some examples, the system may include a substrate 1310 including at least a first mandrel 1314 and a second mandrel 1315 on which at least a first component 1302 including a nanotwinned metal alloy material and a second component 1301 including a nanotwinned metal alloy material may be formed. As shown, some or all of the mandrels 1314, 1315 may be masked using a component 1312 that is substantially similar to the component 1312 with respect to the embodiment of the present invention. Fig.9A The masking member 1211. In addition, to facilitate the flow of the electrolyte solution in the deposition cell and ensure uniform deposition on the mandrels 1314, 1315, the substrate 1310 may define one or more holes 1311, which may allow the electrolyte solution to flow therethrough.

[0129] Fig. 9CA schematic diagram of a system for forming a plurality of components including nanotwinned metallic materials is shown, which system may be substantially similar to the system of FIG. Fig. 9B The system may also include Fig. 9B Some or all of the features of the described system. In this example, the system may include a substrate 1410, which may include any number of mandrels 1414 disposed thereon as desired. A separate component including a nanotwinned metal alloy material may be formed or deposited onto each mandrel 1414. In some examples, an anode 1420 of the system may be disposed near or opposite to the mandrel 1414. In some examples, the anode 1420 may define one or more holes 1422, and an electrolyte solution may flow or move through the one or more holes, as shown by the arrows here.

[0130] Fig.10 A process flow diagram of an exemplary process 1500 for depositing or electroforming a nanotwinned metal alloy material as described herein (such as a nanotwinned metal alloy component 1001 deposited onto a mandrel 1014 by a system 1000) in a desired shape is shown. The process 1500 for depositing a nanotwinned metal alloy component can be an electroforming process and can include: at block 1510, immersing a carrier or mandrel having a shape corresponding to the shape of the component to be formed into an electrolyte solution; at block 1520, applying a voltage to a deposition cell including the carrier and the electrolyte solution; and at block 1530, depositing a nanotwinned metal alloy material such as a nanotwinned Cu-Ag alloy described herein onto the carrier in a desired shape to a desired thickness, for example, a thickness greater than about 50 microns.

[0131] At block 1510, one or more carriers or mandrels are at least partially immersed in an electrolyte solution. In some examples, this may include placing a carrier (such as, for example, Fig. 8A The mandrel 1014 is shown as being at least partially immersed in an electrolyte solution that includes cations of the metal to be deposited or formed. In some examples, for example Fig. 8A As shown, the support may be at least partially immersed in the electroforming bath, but any suitable dipping technique and electrolyte solution container may be used.

[0132] At block 1520, a voltage is applied to a deposition cell including a support and an electrolyte solution. In some examples, the deposition cell may include a cathode (such as a support) on which the nanotwinned metal alloy material is to be deposited, an electrolyte solution, and one or more anodes. For example, Fig. 8AAs shown, the deposition cell may include a mandrel 1014, a deposition bath 1020 including an electrolyte solution 1024, and an anode 1022. A voltage may be applied and an alternating current or a direct current may be driven to achieve a desired current density or current density range at the carrier. In some examples, such as when direct current is applied or driven to the deposition cell, the current density at one or more locations on the carrier where the nanotwin metal alloy material is deposited may be from about 1ASD to about 500ASD. In some examples, the current density at the location where the nanotwin metal material is deposited on the carrier may be greater than or equal to about 10ASD, greater than or equal to about 50ASD, greater than or equal to about 100ASD, greater than or equal to about 250ASD, or greater than or equal to about 500ASD or greater. In some examples, the current density may be about 12ASD.

[0133] In some examples, an alternating current or a pulsed direct current may be applied to the deposition cell. In some examples where a pulsed current is applied to the deposition cell, the current density at the location where the nanotwinned metal material is deposited on the carrier may be between about 1 ASD and about 500 ASD during the pulse. For example, the current density at the location where the nanotwinned metal material is deposited on the carrier may be greater than or equal to about 1 ASD, greater than or equal to about 10 ASD, greater than or equal to about 50 ASD, greater than or equal to about 100 ASD, greater than or equal to about 250 ASD, or greater than or equal to about 500 ASD or greater. In some examples, the current density may be about 80 ASD during the pulse.

[0134] In some examples, one or more pulses of the pulsed current may have a duration between 2 milliseconds (ms) and about 500 ms. For example, one or more pulses of the pulsed current may have a duration greater than or equal to about 2 ms, greater than or equal to about 50 ms, greater than or equal to about 100 ms, greater than or equal to about 250 ms, or greater than or equal to about 500 ms or longer. In some examples, one or more pulses may have a duration of about 3 ms. In some examples, one or more durations between pulses may remain the same between each pulse, or may vary as the deposition process 1500 is performed. For example, the duration between each pulse may be 10 ms to about 3000 ms. In some examples, the duration between pulses may be greater than or equal to 10 ms, greater than or equal to 100 ms, greater than or equal to 500 ms, greater than or equal to 1000 ms, greater than or equal to 2000 ms, or greater than or equal to 3000 ms or longer. In some examples, the duration between pulses may be about 25 ms. Similarly, the pulse time itself may vary throughout the deposition process 1500.

[0135] At box 1530, the nanotwin metal alloy material is deposited onto at least a portion of the carrier (e.g., a portion of the carrier immersed in the electrolyte solution) to a desired thickness. In some examples, the nanotwin metal alloy material may include copper. In some examples, the nanotwin metal alloy material may include copper, silver, and / or their alloys. In some examples, the nanotwin metal alloy material may be deposited to a thickness greater than or equal to about 30 microns, greater than or equal to about 40 microns, greater than or equal to about 50 microns, or greater than or equal to about 100 microns. In some examples, the nanotwin metal alloy material may be deposited to any desired thickness. In some examples, the nanotwin metal alloy material is formed on the carrier so that the shape of the material corresponds to the shape of the mandrel. Therefore, in view of the fact that a mandrel having a corresponding shape is used as a carrier, the component formed according to process 1500 may have any desired shape. In some examples, the deposited or formed nanotwin metal alloy material may have the shape of all or part of any component including the nanotwin metal alloy material described herein.

[0136] Any number or types of electronic device components may include nanotwinned metal alloy materials, as described herein. A process for forming such nanotwinned metal alloy materials (e.g., forming nanotwinned metal alloy materials having a thickness greater than 50 microns) may include depositing the nanotwinned metal alloy material onto a carrier to a desired thickness. The nanotwinned metal alloy material may be formed into a desired shape during deposition and / or may be subjected to a manufacturing process or treatment to achieve the desired shape, for example to form all or a portion of an electronic component. Reference will be made to FIG. 11A to FIG. 14 Various example components including nanotwinned metal alloy materials are described.

[0137] Fig.11A A perspective view of an example of an electronic device 1600 is shown. Fig.11A The electronic device 1600 shown is a mobile wireless communications device, such as a smart phone. Fig.11A The smartphone of is only one representative example of a device that can be used in conjunction with the systems and methods described herein and can include one or more components and / or materials described herein. Electronic device 1600 can correspond to any form of wearable electronic device, portable media player, media storage device, portable digital assistant ("PDA"), tablet computer, computer, mobile communication device, GPS unit, remote control device, or any other electronic device. Electronic device 1600 can be referred to as an electronic device or consumer device.

[0138] Fig. 11BAn exploded view of an electronic device 1600 is shown. The electronic device 1600 may have a housing that includes a frame or border strip 1602 that defines a portion of the outer perimeter and outer surface of the electronic device 1600. The border strip 1602 or a portion thereof may be joined to one or more other components of the device as described herein. In some examples, the border strip 1602 may include several sidewall components, such as a first sidewall component 1604, a second sidewall component 1606, a third sidewall component 1608 (which is opposite to the first sidewall component 1604), and a fourth sidewall component 1610. The sidewall components may be joined to one or more other components of the device, such as described herein, at multiple locations. The housing of the device 1600, such as the border strip 1602, may include one or more features for receiving or coupling to other components of the device 1600. In some examples, one or more of the sidewall components 1604, 1606, 1608, 1610 may include a metal material, such as steel.

[0139] In some examples, one or more of sidewall components 1604, 1606, 1608, 1610 may include a nanotwinned metal material, such as a nanotwinned copper alloy material. In some examples, an interior portion of one or more of sidewall components 1604, 1606, 1608, 1610 (such as a portion that at least partially defines an interior volume of device 1600) may include a nanotwinned metal material. In some examples, while some portions of one or more of sidewall components 1604, 1606, 1608, 1610 may include a nanotwinned metal alloy material, a second portion of one or more of sidewall components 1604, 1606, 1608, 1610 may include an additional material, such as steel. For example, an interior portion of one or more of the sidewall components 1604, 1606, 1608, 1610 may include a nanotwinned metal alloy material, and an exterior portion or outer portion (such as a portion that at least partially defines an exterior surface of the device 1600) may include a different second material, such as steel. However, in some examples, the entirety of one or more of the sidewall components 1604, 1606, 1608, 1610 may be formed of a nanotwinned metal alloy material as described herein. In some examples, one or more of the sidewall components 1604, 1606, 1608, 1610 may allow one or more of the sidewall components 1604, 1606, 1608, 1610 to provide a high level of thermal conductivity, for example via the nanotwinned metal alloy material, to provide thermal management to the device 1600 while maintaining a desired hardness, durability, and exterior finish of the device 1600.

[0140] In some examples, some of the sidewall components 1604, 1606, 1608, 1610 may form part of an antenna assembly (not shown). As a result, one or more non-metallic materials may separate the sidewall components 1604, 1606, 1608, 1610 of the border strip 1602 from each other so as to electrically isolate the sidewall components 1604, 1606, 1608, 1610. For example, the separation material 1614 separates the second sidewall component 1606 from the third sidewall component 1608. As a non-limiting example, the aforementioned materials may include one or more electrically inert materials or electrically insulating materials, such as plastics and / or resins. In addition, as described herein, one or more of the sidewall components 1604, 1606, 1608, 1610 may be electrically connected or physically connected to internal components of the electronic device 1600, such as the support component 1630, as described herein. In some examples, these electrical connections can be made by joining sidewall components 1604, 1606, 1608, 1610 to an internal component (e.g., as part of an antenna assembly).

[0141] The electronic device 1600 may also include a display assembly 1616, which may include an outer protective layer or cover. The display assembly 1616 may include multiple layers, each of which provides a unique function. In some examples, the outer layer, cover or portion of the outer surface of the display assembly 1616 that defines the device 1600 may be considered as part of the housing of the device. In addition, the protective cover of the display assembly 1616 may include any transparent material, or a combination of desired materials such as polymer materials, and / or ceramic materials such as sapphire or glass. In some examples, the display assembly 1616 may include a display component, such as a liquid crystal display (LCD) component or a light emitting diode (LED) display component. In some examples, the display assembly 1616 may include a touch-sensitive layer and / or one or more touch sensors. In some examples, the display assembly 1616 may be received by the frame band 1602 and / or attached to the frame band by one or more attachment features.

[0142] Device 1600 may include internal components, such as a system-in-package (SiP) 1626, which include one or more integrated circuits, such as a processor, a sensor, and a memory. Device 1600 may also include a battery 1624 housed in the internal volume of device 1600. Additional components, such as a haptic engine 1622, may also be included in device 1600. In some examples, one or more of these internal components may be mounted to a circuit board 1620, which may be joined or attached to other components of device 1600, such as a bezel band 1602. In some examples, and as described herein, one or more of components such as SiP 1626 and battery 1624 may include nanotwin metal alloy materials. In some examples, device 1600 may include additional components that include nanotwin metal alloy materials. For example, device 1600 may include: an electrical connector socket 1650 and / or a camera module 1660 including nanotwin metal alloy materials.

[0143] The electronic device 1600 may also include a support component 1630, also referred to as a support plate, backplane, or chassis, which may perform a variety of functions. For example, the support component 1630 may provide structural support for the electronic device 1600. The support component 1630 may include a rigid material as described herein, such as one or more metals. In some examples, the support component 1630 may assist in the thermal management of the device 1600, such as by acting as a heat sink or heat sink for one or more components of the device. In some examples, the support component 1630 may include a nanotwin metal alloy material that may transfer thermal energy or heat from a component of the device 1600 to one or more other desired locations or other components of the device 1600. For example, the SiP 1626 may generate a heat load during operation and may be thermally coupled to the support component 1630. At least some of the heat load of the SiP may be transferred to the support component 1630, whereupon the heat energy may be distributed to the entire support component 1630 and / or to one or more other components connected thereto.

[0144] In some examples, support member 1630 may include a nanotwinned metal copper alloy material. Support member 1630 may be physically, electrically, and / or thermally coupled to border band 1602. In this way, support member 1630 may, for example, provide an electrical ground path for a component (such as a compass or an antenna) electrically coupled to support member 1630. Support member 1630 may also include one or more attachment features so that one or more components of electronic device 1600 may be attached to support member 1630, for example, by fasteners and / or by welding, as described herein. In some examples, support member 1630 may be joined to border band 1602 of device 1600 at one or more locations by any desired method, such as welding. The advantageous properties of the nanotwinned metal alloy material described herein may allow support member 1630 to achieve desired levels of thermal and electrical conductivity while also providing desired levels of mechanical support.

[0145] The outer surface of the electronic device 1600 may be additionally defined by a rear cover 1640, which may be coupled to one or more other components of the device 1600. In this regard, the rear cover 1640 may be combined with the frame band 1602 to form a shell or housing of the electronic device 1600, wherein the shell or housing (including the frame band 1602 and the rear cover 1640) at least partially defines an internal volume. The rear cover 1640 may include a transparent material such as glass, plastic, sapphire, or a combination thereof. The inner portion of the rear cover 1640 may be bonded to the support member 1630, such as by an adhesive. The portion of the support member 1630 bonded to the rear cover 1640 may protrude relative to other peripheral portions of the support member so that welding can be provided in the space between the support member 1630 and the rear cover 1640 when the device 1600 is assembled. The gap may allow the parts to be assembled without interference between the welding on the support member 1630 and the rear cover 1640. Additionally or alternatively, the rear cover 1640 can be directly bonded to the bezel strip 1602, or coupled to the bezel strip 1602 by interference or other mechanical engagement.

[0146] Fig. 12A A perspective view of a first electrical connector 1710 and a corresponding second electrical connector 1720 is shown. In some examples, electrical connectors 1710 and 1720 can be designed to interlock and connect with each other so that an electrical connection is formed between electrical connectors 1710 and 1720. In some examples, connectors 1710 and 1720 can be electrically coupled to one or more components of an electronic device such as device 1600 and can be used to electrically couple or connect the components to each other. For example, electrical connector 1710 can be coupled to a component such as a Fig. 11BThe SiP 1626 may be or may be part of the component, and the connector 1720 may be coupled to or may be part of a component such as a PCB 1620. In some examples, the connectors 1710, 1720 may be board-to-board connectors, or may couple any other components or devices together.

[0147] In some examples, connector 1710 may include a first electrical contact portion 1712 and a second electrical contact portion 1714. In some examples, these contact portions 1712, 1714 may include a nanotwinned metal alloy material, such as a nanotwinned Cu-Ag alloy. Similarly, connector 1720 may include a first contact portion 1722 designed to contact and couple with the first contact portion 1712, and a second contact portion 1724 designed to contact and couple with the second contact portion 1724. Contact portions 1722, 1724 may also include or be formed of a nanotwinned metal alloy material (such as the nanotwinned Cu-Ag alloy described herein).

[0148] Fig. 12B A perspective view of electrical connectors 1710, 1720 are shown arranged opposite each other and in line before connection (e.g., the two electrical connectors can be arranged before assembling components of an electronic device). It can be seen that connector 1720 can receive connector 1710, and the contact portions 1712, 1714 and 1722, 1724 of each connector can be configured to mechanically and electrically contact each other. Fig. 12C A cross-sectional view of an electrical connector 1710, 1720 in a connected state is shown. It can be seen that the contact portions 1712, 1714, 1722, 1724 can overlap each other and can be designed to be slightly deformed to provide a firm connection between these contact portions. Therefore, the material forming the contact portions 1712, 1714, 1722, 1724 must be strong enough to withstand the connection process without degradation or breakage, while still providing a high level of electrical conductivity to allow effective electrical connection. Although some materials (such as, non-nano twinned copper or non-alloy materials) can achieve a desired level of electrical conductivity, the relatively low mechanical strength of the material means that the contact portions 1712, 1714, 1722, 1724 must be relatively large in order to ensure that these contact portions can withstand the connection process. However, in some examples, where contact portions 1712, 1714, 1722, 1724 include nanotwinned metal alloy materials, contact portions 1712, 1714, 1722, 1724 may be designed to have significantly smaller dimensions, yet these dimensions still have the necessary mechanical properties for ensuring the desired connection. Therefore, the use of nanotwinned metal alloy materials in connectors 1710, 1720 may allow the size of the connector to be significantly reduced compared to connectors that include non-nanotwinned metals. FIG. 13A to FIG. 13C Further details regarding electronic components including nanotwinned metal alloy materials are described.

[0149] Fig.13A A connector receptacle 1850 is shown. The connector receptacle may include some or all of the features of any of the components described herein, such as including nanotwinned metal alloy materials, and may be substantially similar to the components described herein. Fig. 11B The connector socket 950 described. The connector socket 1850 may include a housing 1830 having a front guide 1810 forming a front opening 1812. In some examples, the connector insert may be inserted into the connector socket 1850 via the opening 1812 in the front guide 1810. A plurality of contacts 1820 may be located in a slot or channel 1813 in the housing 1830. The connector socket 1850 may also include additional contact structures, such as side grounding contacts that may be exposed through a side opening in the housing 1830. When the connector insert is inserted into the connector socket 1850, the contacts 1820 and the side grounding contacts may provide a retaining force. The housing 1830 may also include a post 1822. The post 1822 may be electrically coupled to other components of the electronic device, for example, by being placed in an opening of a printed circuit board, a device housing, or other suitable substrate for mechanical stability.

[0150] Electrical signals and / or power can be transmitted from the connector insert to the contact 1820 at high data rates and / or high power rates. In addition, a relatively large number of signals can be packed into a very small connector socket 1850. In some examples, in order to provide a high level of signal integrity and quality and efficient power transmission, the contact 1820 can be formed of a material having a high level of electrical conductivity, such as a nanotwin metal alloy material. For example, the contact 1820 can be formed of a nanotwin Cu-Ag alloy material described herein. The resulting contact 1820 can have a lower impedance or resistance, but can also have a desired level of mechanical properties that allow the contact 1820 to provide a strong beam spring force when engaged with the connector insert. Therefore, due to the efficiency provided by the high electrical conductivity and relatively high level of mechanical strength of the contact 1820, any number of dimensions of the contact 1120 can be thinner, shorter and / or smaller than similar contacts formed of non-nano twin materials and / or non-alloy materials, while providing similar or even improved performance levels.

[0151] FIG. 13B to FIG. 13C is a simplified cross-sectional view of the mating process of the connector insert 1852 and the connector receptacle 1850. Fig. 13B The connector insert 1852 is shown inserted Fig.13A The connector insert 1852 and connector receptacle 1850 are shown before being positioned within the opening 1812 of the connector receptacle 1850 . Fig. 13C The connector insert 1852 is shown fully inserted into the connector socket 1850 such that the contact portion 1854 of the connector insert 1852 is in electrical contact with the contact 1820 of the connector socket 1850. In some examples, the contact portion 1854 of the connector insert 1852 may include a nanotwinned metal alloy material, such as a nanotwinned metal Cu-Ag alloy. The increased electrical conductivity provided by the nanotwinned metal alloy material of the contact 1820 and the contact portion 1854 may have a synergistic effect, thereby providing a high level of efficiency in data and power transmitted from the connector insert 1852 to the connector socket 1850 and to other components of the electronic device including the connector socket 1850.

[0152] As in Fig. 13B and Fig. 13C It can also be seen that the contacts 1820 of the connector socket 1850 may have a spring bias so that the contacts are in a raised position when the connector insert 1852 is not inserted, and in a depressed or downward second position ( Fig. 13C 1850). The bias can help maintain contact between the contact 1820 and the contact portion 1854 throughout the life of the connector socket 1850. However, in order to provide this function, the material of the contact 1820 must have a desired level of mechanical strength and durability in addition to the desired electrical properties. Therefore, the nanotwinned metal alloy material forming the contact 1820 can provide such properties. Fig.14 Further details are provided for components of electronic devices including nanotwinned metal alloy materials.

[0153] Fig.14 1960 is a perspective view of a schematic diagram of a camera module 1960. The camera module 1960 may include some or all of the features of any of the components described herein, and may be substantially similar to the Fig.18B The camera module 960. In some examples, the camera module 1960 may include a lens barrel holder 1905 that may extend upward around the outer circumference of the solid-state lens 1910, thereby providing a physical barrier to protect the edge of the solid-state lens 1910 and helping to minimize the possibility of the solid-state lens 1910 being damaged when the camera module 1960 comes into contact with an external object.

[0154] In some examples, lens barrel holder 1905 or other locations on camera module 1960 may include a plurality of corresponding contact areas corresponding to plurality of conductive connectors 1915. In some examples, conductive connector 1915 may be at least partially located below solid-state lens 1910 and may make physical and electrical contact with solid-state lens 1910. Similarly, a plurality of corresponding underlying conductive connectors 1925 may be attached to conductive connector 1915 via corresponding conductive interconnects 1920.

[0155] In some examples, conductive connector 1915, lower conductive connector 1925, and / or conductive interconnect 1920 may include a nanotwinned metal alloy material, such as a nanotwinned Cu-Ag alloy. In some examples, conductive connector 1915, lower conductive connector 1925, and / or conductive interconnect 1920 may be formed by laser direct structuring (LDS) or other additive manufacturing processes. In some examples, such as in the case of formation by an LDS process, a laser may trace the desired location (e.g., channel) of the interconnect electrical trace along the wall of lens barrel holder 1905, and then perform a nanotwinned metal material deposition step (e.g., electrodeposition or electroforming as described herein) such that the nanotwinned metal material is deposited and adhered to the traced channel on the inner surface of the wall of lens barrel holder 1905 to a desired thickness.

[0156] In some examples, the conductive connector 1915, the lower conductive connector 1925, and / or the conductive interconnect 1920 comprising a nanotwinned metal alloy material can transmit various types of control signals, provide electrical power, and / or provide electrical grounding between the solid-state lens 1910 and the substrate of the camera module 1960 or other components of the electronic device including the camera module 1960, thereby enabling communication with one or more processors, other control modules, power supplies, and / or electrical grounding connectors. As described herein, the level of mechanical strength and electrical conductivity provided by the nanotwinned metal alloy material of the conductive connector 1915, the lower conductive connector 1925, and / or the conductive interconnect 1920 can allow high power levels and / or large amounts of information to be quickly and efficiently transmitted to the camera module 1960. In some examples, the use of the conductive connector 1915, the lower conductive connector 1925, and / or the conductive interconnect 1920 comprising a nanotwinned metal alloy material can allow the camera module 1960 to operate and capture images quickly, reliably, and at high speeds.

[0157] Any number or type of electronic device components may include nanotwinned metal alloy materials. A process for forming such nanotwinned metal alloy materials (e.g., forming nanotwinned metal alloy materials having a thickness greater than 50 microns) may include depositing the nanotwinned metal alloy material onto a carrier to a desired thickness, as described herein. The nanotwinned metal alloy material may be formed into a desired shape during deposition and / or may be subjected to a manufacturing process or treatment to achieve the desired shape, for example to form all or a portion of an electronic component. Reference will be made to FIG. 15A to FIG. 15B Various example components including nanotwinned metal alloy materials are described.

[0158] Fig.15A A simplified plan view of a housing 2000 for a pair of wireless earbuds 2015, 2016 is depicted. The housing 2000 and the wireless earbuds 2015, 2016 may include some or all of the features of the components described herein. Fig.15A As shown, the housing 2000 may include a shell 2025 (also referred to as a body) having one or more cavities and configured to receive a pair of earplugs 2015, 2016. In some embodiments, the cavities 2000 may be positioned adjacent to each other on opposite sides of a center plane of the housing. The size and shape of each cavity may be set to match the size and shape of its corresponding earplug 2015, 2016.

[0159] In some examples, the housing 2000 may further include a cover 2020 attached to the housing 2025. The cover 2020 may be operable between a closed position, in which the cover 2020 is aligned over one or more cavities of the housing 2025, thereby completely enclosing a pair of earplugs 2015, 2016 within the housing 2025, and an open position; in the open position, as shown, the cover 2020 is displaced from the housing 2025 and the cavity, so that a user can remove the earplugs 2015, 2016 from the cavity or replace the earplugs within the cavity. The cover 2020 may be pivotally attached to the housing 2025, for example, by a hinge member 2005, and may include a magnetic or mechanical system (not shown) that provides a bistable operation for the cover 2020. In some examples, the housing 2000 may further include a charging system configured to charge the pair of earplugs 2015, 2016. In some examples, the housing 2000 can thus include a battery or other power source (not shown), and can include one or more electrical contacts 2040 that can be electrically coupled to the power source. In some examples, when the earbuds 2015, 2016 are inserted into the cavity of the housing 2025, the electrical contacts 2047 on each earbud can form an electrical connection with the contacts 2040 to provide electrical power to the earbuds 2015, 2016, for example, to charge a battery or other power source contained therein.

[0160] Fig. 15BA close-up cross-sectional view of a housing 2000 including an earplug 2015 disposed in a cavity thereof is shown. The housing 2000 may include a housing connector or contact 2040 that may be incorporated into the earplug housing 2000 and an electrical earplug connector or contact 2047 disposed at the end of the stem portion of the earplug 2015. Some or all of the housing connector 2040 may make electrical contact with the electrical earplug connector 2047 to provide electrical power to the earplug 2015.

[0161] The combination of the arcuate surfaces on the earplug contact 2047 and the earplug housing contact 2040 enables a contact wiping motion each time the earplugs 2015, 2016 are inserted into and pulled out of the housing 2000, thereby forming a reliable interconnection. Fig. 15B In the figure, a portion 2030 of the shell contact 2040 is shown in a flexed state, which shows the approximate position of the shell contact when the earplug 2015 is fully inserted into its receiving cavity so that the earplug contact 2047 engages with the earplug shell connector or contact 2040.

[0162] During a mating event, as the earplug 2015 is inserted deeper into the earplug receiving cavity, the earplug housing contact 2040 may make physical and / or electrical contact with the earplug contact 2047 and deflect outward. When the earplug 2015 is removed from the earplug receiving cavity, the outer contact surfaces of the earplug contact 2047 and the earplug housing contact 2040 rub against each other during the mating event and during the de-mating event. In some examples, the earplug housing contact 2040 may also include a base contact portion 2032 that may contact the second location of the earplug contact 2047 to provide a secure connection. In addition, the earplug housing contact 2040 may include a connector 2033 for connecting the portions 2032, 2030 to a power source of the housing 2000.

[0163] In some examples, some or all of the earbud shell contacts 2040 (such as portions 2030, 2032, 2033) and the earbud contacts 2047 may be formed of or include a nanotwinned metal alloy material (such as the nanotwinned metal Cu-Ag alloy material described herein). In addition to the electrical efficiency provided by the high electrical conductivity of the nanotwinned metal alloy material, it may be advantageous to form the contacts 2040, 2047 from a nanotwinned metal alloy material because the wiping motion caused by the insertion and removal of the earbuds 2015, 2016 may result in a high level of physical wear. As described herein, the high hardness and strength of the nanotwinned metal alloy material can ensure that these contacts do not degrade or wear undesirably over time, thereby ensuring electrical contact throughout the life of the shell 2000.

[0164] Additionally, in some examples, the earplugs 2015, 2016 may include a magnet or magnetic component that may be attracted to at least one housing magnetic component disposed within the housing 2000. The attraction may be strong enough to magnetically secure the earplugs 2015, 2016 to their respective cavities. In order for the magnetic retention system to operate as desired, it may be advantageous for the contacts 2040, 2047 and other components of the housing 2000 to be formed of a non-ferromagnetic material. The non-ferromagnetic nanotwinned metallic Cu-Ag alloy may therefore provide the above-mentioned advantages without interfering with the magnetic retention system of the housing 2000.

[0165] Any number or type of electronic device components may include nanotwinned metal alloy materials. A process for forming such nanotwinned metal alloy materials (e.g., forming nanotwinned metal alloy materials having a thickness greater than 50 microns) may include depositing the nanotwinned metal alloy material onto a carrier to a desired thickness, as described herein. The nanotwinned metal alloy material may be formed into a desired shape during deposition and / or may be subjected to a manufacturing process or treatment to achieve the desired shape, for example to form all or a portion of an electronic component. Reference will be made to Figures 16 to 17B Various example components including nanotwinned metal alloy materials are described.

[0166] Fig.16 A perspective view of a support member 2130 is shown, which may be substantially similar to the support member 930 described herein, and may include some or all of the features of the support member 930 described herein. The support member 2130 may have a substantially planar or flat shape or profile. That is, the support member 2130 may have a desired shape extending in any desired distance and configuration in two dimensions, while having a substantially uniform height or thickness in a third dimension perpendicular to the first two dimensions. Therefore, in some examples, the support member 2130 may include a plate, a sheet, or another substantially planar structure having any desired peripheral profile. The support member 2130 may have a substantially planar shape or profile, but may still include one or more non-planar portions or features, such as protrusions, convexities, flanges, combinations thereof, or any other desired features. In addition, in some examples, the support member 2130 may define a first surface, also referred to as a top surface (shown), and a second surface opposite to the first surface, also referred to as a bottom surface (not shown).

[0167] In some examples, the support member 2130 may define one or more holes or through-holes, such as hole 2132 disposed at any desired location on the support member 2130. In some examples, as described herein, the hole 2132 may allow a component or electromagnetic radiation to pass through the support member 2130 at the location of the hole 2132. In some examples, the support member 2130 may include or define one or more attachment features or locations. For example, all or a portion of the periphery of the support member 2130 may be shaped to provide an attachment feature or location to one or more other components of the electronic device, as described herein. In some examples, the component may be attached to the support member 2130 at any location (such as a location along the periphery of the support member 2130), or to one or more surfaces of the support member, by welding, bonding, bonding, adhesion, or any other desired attachment form or combination of attachment forms.

[0168] In some examples, the support member 2130 may be formed of or may include a nanotwinned metal alloy material, such as the nanotwinned Cu-Ag alloy described herein. In some examples, the support member 2130 may be a monolithic or one-piece piece of nanotwinned metal alloy material. It may be desirable that a structural member (such as the support member 2130) that may support one or more components in an electronic device and / or provide hardness and rigidity to the device also have desired thermal conductivity properties, thereby allowing the support member 2130 to be used as a heat sink and / or heat sink for operating components that are thermally coupled to the support member. Therefore, the mechanical properties and thermal conductivity properties of the nanotwinned metal alloy materials described herein may allow the support member 2130 to perform these functions without the need for additional structural materials or components.

[0169] In some examples, the thickness of the support member 2130 can be between about 50 microns and about 1000 microns, between about 100 microns and about 500 microns, or between about 150 microns and about 250 microns. In some examples, the support member 2130 can have a thickness of about 200 microns or less. FIG. 17A to FIG. 17B Describes additional details of the structural components of the electronic device.

[0170] Fig.17A A side wall member 2210 is shown, which may be similar to that of the Fig. 11B The composite sidewall components 1604, 1606, 1608, 1610 described above may include features of these composite sidewall components. The sidewall component 2210 may include an outer or exterior portion 2222 connected to an inner or interior portion 2224. In this example, the exterior portion 2222 may at least partially define an exterior surface of a housing or case for the electronic device. The interior portion 2224 may at least partially define a surface of an interior volume of the electronic device. Fig.17AAs shown, composite component 2210 may include a plurality of features 2232 , 2234 , 2236 , which may, for example, serve as attachment features for other components of the electronic device to provide mechanical, thermal, and / or electrical connections therebetween.

[0171] In some examples, the inner portion 2224 of the component 2210 may be selected so that it has a set of material properties that allow the components attached thereto to have mechanical support while also providing a high level of thermal conductivity and / or electrical conductivity. Therefore, in some examples, the inner portion 2224 may be formed of or include a nanotwin metal alloy material (such as the nanotwin metal Cu-Ag alloy described herein). In some examples, the inner portion 2224 including the nanotwin metal alloy material may act as a heat sink or other form of thermal management component for any component attached thereto. In addition, the high level of mechanical strength provided by the nanotwin metal alloy material may allow the component to be firmly attached to the features 2232, 2234, 2236, and may allow the component 2210 to also provide mechanical support. In addition, the material of the outer portion may be selected to have a material property or a set of material properties that are independent of the material properties of the inner portion, which material property or this set of material properties allows the outer portion 2222 to have, for example, a high level of hardness and corrosion resistance and / or a desired decorative appearance.

[0172] In some examples, features formed in one or both of outer portion 2222 and inner portion 2224, such as features 2232, 2234, 2236, can have a major dimension from about micrometers to up to about millimeters or several millimeters or more. In some cases, features such as feature 2236 can have a major dimension from about 100 micrometers to about 1 millimeter. In addition, in some cases, features such as feature 2236 can have a minor dimension from about 100 micrometers to about 1 millimeter.

[0173] In addition, if Fig.17A As shown, the outer portion 2222 can have a substantially curved shape or profile that can correspond to the outer profile of the electronic device. The outer portion 2222 can have any shape or profile desired. In some examples where the outer portion 2222 has a substantially curved shape or profile, the inner portion 2224 can be positioned completely behind or inside the curve that defines the curved profile of the outer portion 2222.

[0174] Fig. 17B Another perspective view of component 2210 is shown. Fig. 17BAs shown, one or more regions of the outer portion 2222, such as region 2238, may be removed so that at least some of the nanotwinned metal alloy material forming the inner portion 2224 may be exposed. The exposed surface of the inner portion 2222 may be subjected to treatment or other processing, for example, to protect the exposed surface of the inner portion 2222. Although described as including two portions 2222, 2224 and including different materials, in some examples, the component 2210 may be an integral or continuous component including the nanotwinned metal alloy material. In some examples, the favorable mechanical properties of the nanotwinned metal alloy material may allow the component 2210 to have a desired level of hardness and durability to be used as an outer surface of an electronic device and to withstand daily wear and tear.

[0175] Any number or type of electronic device components may include nanotwinned metal alloy materials. A process for forming such nanotwinned metal alloy materials (e.g., forming nanotwinned metal alloy materials having a thickness greater than 50 microns) may include depositing the nanotwinned metal alloy material onto a carrier to a desired thickness, as described herein. The nanotwinned metal alloy material may be formed into a desired shape during deposition and / or may be subjected to a manufacturing process or treatment to achieve the desired shape, for example to form all or a portion of an electronic component. Reference will be made to FIG. 18A to FIG. 18B Various example components including nanotwinned metal alloy materials are described.

[0176] Fig.18A An example of an electronic device 2300 is shown. Fig.18A The electronic device shown in FIG. 1 is a watch, such as a smart watch. Fig.18A The smartwatch 2300 is only one representative example of a device that may be used with the components and methods disclosed herein. The electronic device 2300 may correspond to any form of wearable electronic device, portable media player, media storage device, portable digital assistant ("PDA"), tablet computer, computer, mobile communication device, GPS unit, remote control device, or other device. The electronic device 2300 may be referred to as an electronic device or a consumer device. Fig.18B Provides more details of watch 2300.

[0177] Fig.18B A view showing support member 2360 and its location within an interior volume at least partially defined by Fig.18AThe housing of the smart watch 2300 is defined. In some examples, the support member 2360 may take the form of a bracket or a support. The support member 2360 may be attached to other components of the device 2300 by features such as studs, columns, screws, or any other features for attachment or fixation. In some examples, one or more electronic components or sensors may also be attached to the support member 2360. For example, components 2362, 2364, and 2366 may all be attached to the surface of the support member 2360 as shown by any desired technology or feature. In some examples, these electronic components 2362, 2364, 2366 may include processors, memory components, sensors, antennas, sound or light emitting components, batteries, or any other desired electronic components. In some examples, the support member 2360 may include a nanotwin metal alloy material, such as a nanotwin Cu-Ag alloy described herein. The material properties of the nanotwinned metal alloy material forming support component 2360 can allow support component 2360 to provide a desired level of mechanical support to components 2362, 2364, 2366, while also managing and distributing the thermal loads generated by components 2362, 2364, 2366, for example, by distributing or directing the heat generated by components 2362, 2364, 2366 to one or more desired locations so as to allow for improved equipment performance levels.

[0178] Any number or type of electronic device components may include nanotwinned metal alloy materials. A process for forming such nanotwinned metal alloy materials (e.g., forming nanotwinned metal alloy materials having a thickness greater than 50 microns) may include depositing the nanotwinned metal alloy material onto a carrier to a desired thickness, as described herein. The nanotwinned metal alloy material may be formed into a desired shape during deposition and / or may be subjected to a manufacturing process or treatment to achieve the desired shape, for example to form all or a portion of an electronic component. Reference will be made to FIG. 19A to FIG. 19C Various example components including nanotwinned metal alloy materials are described.

[0179] Fig.19A A perspective view of an accessory component 2411 of an electronic device is shown. An electronic device such as Fig.19B The device 2410 shown in FIG. 24 can be coupled to an accessory component 2411 for use therewith. In some examples, the device 2410 can be a tablet computer. Fig.19BTablet computer 2410 is only one representative example of a device that can be used in conjunction with the systems and methods described herein and can include one or more components and / or materials described herein. Electronic device 2410 can correspond to any form of wearable electronic device, portable media player, media storage device, portable digital assistant ("PDA"), tablet computer, computer, mobile communication device, GPS unit, remote control device, or any other electronic device. Electronic device 2410 can be referred to as an electronic device or consumer device.

[0180] In some examples, device 2410 and component 2411 can be used together. For example, the input resources of the input-output component in component 2411 can be used to collect input from a user. This user input can then be transmitted to device 2410 via a signal path to control the operation of device 2410. Fig.19A As shown, component 2411 can be a flexible cover that can be used to protect an electronic device such as a tablet or other computing device. In some examples, component 2411 can include body 2420. Body 2420 can have a surface formed of plastic, fabric, microfibers embedded in a polymer layer, or other suitable material. For example, one side of body 2420 (e.g., the exterior of body 2420 when component 2411 is closed around device 2410) can be formed of a polymer sheet, and the other side of body 2420 (e.g., the interior surface of body 2420) can be formed of a microfiber layer.

[0181] Component 2411 may include input-output components such as keyboard 2426, which includes keys 2428, a touch pad (touchpad) for collecting touch and / or force input, and / or other input-output components. In some examples, keyboard 2426 may be installed in lower portion 2420A of component 2411. In some examples, upper portion 2420B of component 2411 may include foldable sections (horizontal strips), such as section 2422. In some examples, section 2422 may be bent around one or more bending axes (such as bending axis 2424). In some examples, upper portion 2420B may have a connector such as connector 2417 to provide an electrical connection with device 2410. In some examples, connector 2417 may be mated with a connector associated with device 2410. In some examples, connector 2417 may include electrical contacts for coupling to corresponding connector contacts in device 2410. These contacts can be electrically coupled to electronic components in the lower portion 2420A, such as the keyboard 2426 (e.g., one or more integrated circuits for collecting keystroke information during operation of keys 2428 in the keyboard 2426).

[0182] In order to accommodate the bending of the housing body 2420 about the bending axis 2424, the housing 2420 may be provided with a flexible hinge portion along the boundary between the sections 2422 (i.e., along the axis 2424). The signal path for coupling the connector 2417 to the circuit in the keyboard 2426 may extend across the axis 2424 (i.e., the signal path may intersect each of the axes 2424 at right angles so as to extend between the connector 2417 and the keyboard 2426). In some examples, because the signal path overlaps the bending axis 2424, the signal path is preferably formed by a flexible signal path structure. With a suitable arrangement, the flexible signal path structure may be formed by a flexible fabric signal path structure having metal traces on a flexible fabric substrate or having strands of conductive material formed as part of the flexible fabric substrate. In some examples, and as described herein, the signal path may include a nanotwinned metal alloy material.

[0183] Fig.19B 2410. As shown, component 2411 can be folded along bending axis 2424 to form a stand for device 2410. In some examples, device 2410 can have a housing 2430 and a display 2432 mounted in housing 2430. Component 2411 can support device 2410 in a position that allows a user to easily view display 2432 while typing on keyboard 2426. When device 2410 is supported by component 2411, a connector of device 2410 can mate with connector 2417 of component 2411. In some examples, one or both of the connector of device 2410 and connector 2417 can include nanotwin metal alloy material. In some examples, component 2411 can be bent along an axis such as axis 2424 and / or other bending axes that span the width of component 2411.

[0184] Fig.19C An illustrative cross-sectional side view of component 2411 is shown. In some examples, component 2411 may include one or more reinforcements, such as fiberglass reinforcement 2434 (e.g., a rigid rectangular material panel). In some examples, a flexible fabric signal path structure 2436 may include an end 2436E coupled between connector 2417 and a printed circuit 2438 or other electronic component of component 2411. In some examples, printed circuit 2438 may be located in a lower body portion 2420A of body 2420 and may contain circuitry (e.g., key switches, integrated circuits, signal traces, etc.) for controlling the operation of keyboard 2426. In some examples, flexible fabric signal path structure 2436 may span a local thinned portion of body 2420 that acts as a hinge along bend axis 2424.

[0185] In some examples, the fabric structure 2436 may include a nanotwin metal alloy material and may define one or more signal paths to transmit electrical power and signals. In some examples, the signal path may be formed by a series of parallel nanotwin metal traces extending along the length of the fabric structure 2436 (i.e., between the connector 2417 and the printed circuit 2438) and serving as a signal bus. In some examples, the nanotwin metal alloy material may be electroplated, electrodeposited, electroformed, or otherwise manufactured, such as by an LDS process as described herein, to form the traces. Advantageously, the high electrical conductivity and mechanical strength of the nanotwin metal alloy material forming the traces may allow very thin sections of metal material that can bend and deform with the component 2411, but can still effectively transmit power and signals at a desired rate or in a desired amount.

[0186] Any number or type of electronic device components may include nanotwinned metal alloy materials. A process for forming such nanotwinned metal alloy materials (e.g., forming nanotwinned metal alloy materials having a thickness greater than 50 microns) may include depositing the nanotwinned metal alloy material onto a carrier to a desired thickness, as described herein. The nanotwinned metal alloy material may be formed into a desired shape during deposition and / or may be subjected to a manufacturing process or treatment to achieve the desired shape, for example to form all or a portion of an electronic component. Reference will be made to FIG. 20A to FIG. 20C Various example components including nanotwinned metal alloy materials are described.

[0187] Fig. 20A A battery or battery pack 2500 is shown. In some examples, battery 2500 can be a rechargeable battery. In some examples, and as Fig. 20B As shown, battery 2500 may include multiple electrochemical cells 2502, 2504, 2506. Cells 2502, 2504, 2506 may be coupled in series or in parallel and may correspond to rechargeable (e.g., secondary) battery cells, such as nickel-cadmium (Ni-Cd) battery cells, nickel-metal hydride (Ni-MH) battery cells, lithium-ion battery cells, lithium polymer cells, and / or any other form of electrochemical battery cells now known or discovered in the future. For example, one or more cells 2502, 2504, 2506 may correspond to lithium-ion battery cells, each of which includes multiple layers (e.g., a cathode with a current collector, a separator, and an anode with a current collector). Reference will be made to the following. Fig. 20C The structure of a single electrochemical cell 2502 is discussed.

[0188] In some examples, the electrochemical cell 2502 may include an anode active material or anode layer 2512 fixed or bonded to the current collector 2510. The cell 2502 may also include a cathode active material or cathode layer 2532 fixed or bonded to the current collector 2530. The anode material 2512 and the cathode material 2532 may be separated from each other by a porous separator layer 2520. In some examples, the separator 2520 may include a polymer and may include a conductive electrolyte. In some examples, the cathode material 2532 may include a lithium compound, and the current collector 2530 may include a conductive film or foil, such as a metal foil, for example, an aluminum foil. However, in some examples, the current collector 2530 may include a nanotwin metal alloy foil or film, such as a nanotwin Cu-Ag alloy foil. In some examples, the cathode material 2532 may be deposited or coated onto the current collector 2530. In some examples, the anode material 2512 may include carbon, such as graphite. The current collector 2510 may include a conductive film or foil, such as a copper foil. In some examples, current collector 2510 may include a nanotwinned metal alloy foil or film, such as a nanotwinned Cu-Ag alloy foil. In some examples, anode material 2512 may be deposited, coated, or formed onto a previously formed current collector 2510 including a nanotwinned metal alloy material.

[0189] Although the electrochemical cells of battery 2500 are shown as having a flat or layered layer structure, cells of substantially any shape and configuration may be used. For example, battery 2500 may include cells that include layers such as a nanotwinned metal alloy current collector that may be wound around a mandrel to form a spirally wound structure. Additionally, in some examples, the cells may vary in size and may be stacked in a configuration to achieve any shape or form of battery 2500 as desired.

[0190] Any of the materials, structures, properties, features, or aspects of the components described herein may be combined or included in any combination of variations. For example, the design and shape of any component including the nanotwinned metal alloy material is not subject to any restrictions and may be all or part of any one or more components of an electronic device. Although certain exemplary nanotwinned metal alloy materials and their formation and manufacturing processes have been discussed, these materials may be used in any desired manner and may include any of the described material properties.

[0191] To the extent applicable to the present technology, the collection and use of data obtained from various sources can be used to improve the delivery of inspirational content or any other content that may be of interest to users. The present disclosure contemplates that in some instances, the collected data may include personal information data that uniquely identifies or can be used to contact or locate a specific person. Such personal information data may include demographic data, location-based data, phone numbers, email addresses, ID, home address, data or records related to the user's health or fitness level (e.g., vital sign measurements, medication information, exercise information), date of birth, or any other identifying or personal information.

[0192] The present disclosure recognizes that the use of such personal information data in the present technology can be used to benefit users. For example, the personal information data can be used to deliver targeted content that users are more interested in. Therefore, the use of such personal information data enables users to have planned control over the content delivered. In addition, the present disclosure also anticipates other uses of personal information data that benefit users. For example, health and fitness data can be used to provide insights into the user's overall health status, or can be used as positive feedback for individuals who use technology to pursue health goals.

[0193] This disclosure envisions that entities responsible for collecting, analyzing, disclosing, transmitting, storing or otherwise using such personal information data will comply with established privacy policies and / or privacy practices. Specifically, such entities should implement and adhere to privacy policies and practices that are recognized as meeting or exceeding industry or government requirements for maintaining the privacy and security of personal information data. Such policies should be easily accessible to users and should be updated as the collection and / or use of data changes. Personal information from users should be collected for legitimate and reasonable purposes of the entity and not shared or sold outside of these legitimate uses. In addition, such collection / sharing should be performed after receiving the user's informed consent. In addition, such entities should consider taking any necessary steps to defend and safeguard access to such personal information data and ensure that others who have access to personal information data comply with their privacy policies and processes. In addition, such entities may subject themselves to third-party assessments to demonstrate their compliance with widely accepted privacy policies and practices. In addition, policies and practices should be adjusted to specific types of personal information data collected and / or accessed, and to applicable laws and standards including specific considerations of jurisdiction. For example, in the United States, the collection or access of certain health data may be governed by federal and / or state laws, such as the Health Insurance Portability and Accountability Act (HIPAA); while health data in other countries may be subject to other regulations and policies and should be handled accordingly. Therefore, different privacy practices should be maintained in each country for different types of personal data.

[0194] Regardless of the foregoing, the present disclosure also contemplates implementation schemes in which users selectively block the use or access of personal information data. That is, the present disclosure contemplates that hardware elements and / or software elements may be provided to prevent or block access to such personal information data. For example, with respect to an advertising delivery service, the technology of the present invention may be configured to allow a user to choose to "opt in" or "opt out" at any time during or after registration for the service to participate in the collection of personal information data. In another example, a user may choose not to provide emotion-related data for a target content delivery service. In another example, a user may choose to limit the length of time that emotion-related data is retained, or completely prohibit the development of basic emotional conditions. In addition to providing "opt-in" and "opt-out" options, the present disclosure contemplates providing notifications related to access or use of personal information. For example, a user may be notified that their personal information data will be accessed when downloading an application, and then the user may be reminded again just before the personal information data is accessed by the application.

[0195] In addition, it is an object of the present disclosure that personal information data should be managed and processed to minimize the risk of unintentional or unauthorized access or use. Risks can be minimized by limiting data collection and deleting data once it is no longer needed. In addition, and when applicable, including in certain health-related applications, data de-identification can be used to protect the privacy of users. De-identification can be facilitated by removing specific identifiers (e.g., date of birth, etc.), controlling the amount or specificity of stored data (e.g., collecting location data at the city level rather than at the address level), controlling how data is stored (e.g., aggregating data between users), and / or other methods when appropriate.

[0196] Thus, while the present disclosure broadly covers the use of personal information data to implement one or more of the various disclosed embodiments, the present disclosure also contemplates that various embodiments may also be implemented without access to such personal information data. That is, various embodiments of the present technology will not fail to function properly due to the lack of all or a portion of such personal information data. For example, content may be selected and delivered to a user by inferring preferences based on non-personal information data or an absolute minimum amount of personal information, such as content requested by a device associated with the user, other non-personal information available to a content delivery service, or publicly available information.

[0197] As used herein, the terms exterior, outside, interior, inside, top, and bottom are used for reference purposes only. An exterior portion or exterior portion of a component may form a portion of an exterior surface of a component, but may not necessarily form the entire exterior of the exterior surface of the component. Similarly, an interior portion or interior portion of a component may form or define an interior portion or interior portion of a component, but may also form or define a portion of an exterior surface or exterior surface of a component. In some orientations of a component, a top portion of a component may be located above a bottom portion of the component, but may also be in line with, below, or in other spatial relationships with the bottom portion depending on the orientation of the component.

[0198] As used herein, the terms "first" and "second" are used for reference only when used to describe a first layer and a second layer, and are not intended to indicate or imply any order or relationship between layers, materials, or components, or any processes involving layers, materials, or components. For example, the second layer may be provided, formed, or processed first in a process involving a first layer and a second layer. Furthermore, in some examples, the second material may cover the first material, while in other examples, the first material may cover the second material. Therefore, the terms "first" and "second" are not intended to limit the order or orientation of materials, layers, or components in any way.

[0199] Various inventions are described herein with reference to certain specific embodiments and examples. However, those skilled in the art will recognize that many variations may be made without departing from the scope and spirit of the invention disclosed herein, as those inventions set forth in the following claims are intended to cover all variations and modifications disclosed herein without departing from the spirit of the invention. The terms "comprising" and "having" as used in the specification and claims shall have the same meaning as the term "including".

[0200] For the purpose of illustration, the foregoing description uses specific nomenclature to provide a thorough understanding of the embodiments. However, it will be apparent to those skilled in the art that specific details are not required in order to practice the embodiments. Therefore, for the purpose of illustration and description, the foregoing description of the specific embodiments described herein is presented. They are not intended to be exhaustive or to limit the embodiments to the disclosed precise forms. It will be apparent to those of ordinary skill in the art that, in view of the above teachings, many modifications and variations are feasible.

Claims

1. An alloy material comprising: a first metal and a second metal electrodeposited onto a support, the alloy material comprising grains; At least 90% of the grains include nano-twin boundaries. 2 . The alloy material according to claim 1 , wherein the first metal comprises copper (Cu), and the second metal comprises one of silver (Ag) or cobalt (Co).

3. The alloy material of claim 1, wherein the grains have an average spacing between nanotwin boundaries of between 2 nanometers (nm) and 5 nm. The alloy material according to claim 1 , wherein at least 95% of the grains comprise the nanotwin boundaries.

5. An electronic device comprising: A conductive component comprising a metal alloy comprising a series of grains, the metal alloy comprising a copper (Cu) alloy and between 0.5 at % and 2 at % of silver (Ag) or cobalt (Co), wherein at least 90% of the series of grains comprise nanotwin boundaries. The electronic device according to claim 5 , wherein the conductive component is an electrically conductive component. The electronic device according to claim 6 , wherein the conductive component comprises a charging socket.

8. The electronic device of claim 6, wherein the conductive component comprises an electrical connector located between two electronic components.

9. The electronic device of claim 8, wherein the two electronic components comprise printed circuit boards.

10. The electronic device of claim 6, wherein the conductive component is a thermally conductive component. The electronic device according to claim 10 , wherein the heat conducting component comprises a support plate. 12 . The electronic device of claim 10 , wherein the thermally conductive component comprises a non-planar shape and mechanically supports a component attached to the thermally conductive component.

13. The electronic device according to claim 6, further comprising a battery, wherein the battery comprises: an electrochemical cell comprising an electrolyte, an anode, and a cathode; and A current collector is electrically coupled to one of the anode or the cathode, the current collector comprising the conductive member.

14. The battery of claim 13, wherein the metal alloy has a thickness of less than 10 microns.

15. The battery of claim 13, wherein the electrochemical cell is a lithium ion electrochemical cell.

16. A method of forming a component, comprising: depositing a metallic material including grains, one or more of the grains comprising nanotwin boundaries; The metal material includes a copper (Cu) alloy, and the Cu alloy includes one of silver (Ag) or cobalt (Co) between 0.5 at % and 2 at %. The method of claim 16 , wherein depositing the metallic material comprises co-sputtering the metallic material. The method of claim 16 , wherein depositing the metallic material comprises electroplating the metallic material.

19. The method of claim 18, wherein the carrier comprises a conductive mandrel having a shape corresponding to a shape of the component.

20. The method of claim 18, wherein the support is at least partially immersed in an electrolyte solution comprising cations of the metal material and an inhibitor.

Images