Gallium nitride power supply driving control circuit

Abstract

The invention relates to the technical field of control circuits, and discloses a gallium nitride power supply drive control circuit which comprises an input rectification filter circuit, a PWM control circuit, a gallium nitride switch tube drive circuit, a feedback control circuit and an output rectification filter circuit. Wherein the output end of the input rectification filter circuit is connected with the input end of the PWM control circuit, the output end of the PWM control circuit is connected with the input end of the gallium nitride switch tube driving circuit, and the output end of the gallium nitride switch tube driving circuit is connected with the input end of the output rectification filter circuit. The output end of the output rectification filter circuit is connected with the input end of the feedback control circuit, and the output end of the feedback control circuit is connected with the input end of the PWM control circuit. By integrating the efficient gallium nitride transistor and accurate PWM control, high-efficiency and high-stability power supply conversion is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of control circuits, and in particular to a gallium nitride power supply drive control circuit. Background Art

[0002] As modern electronic devices move towards higher performance and miniaturization, the performance and efficiency requirements of power systems are becoming increasingly higher. Traditional silicon-based power conversion technology has shown obvious limitations in meeting the needs of high frequency, high efficiency and high power density, especially in new generation communication devices, wearable technology and advanced computing devices. These devices often need to achieve efficient power conversion in a very small space, and the heat loss and efficiency reduction of traditional silicon-based technology during high-frequency operation are particularly prominent.

[0003] Gallium nitride (GaN), as a new wide bandgap semiconductor material, has met these challenges with its excellent electrical properties. GaN has low on-resistance and high electron mobility, which makes it show higher efficiency and better thermal stability than traditional silicon materials in high-frequency and high-voltage power applications. These characteristics make gallium nitride very suitable for applications that require high-speed switching and high-efficiency conversion, such as modern power adapters, power solutions for data centers, and fast charging systems for electric vehicles.

[0004] In order to further improve the efficiency of power conversion and reduce the size of the system, researchers and engineers are actively developing power drive control circuits based on gallium nitride. These circuit designs take advantage of the low loss and fast response characteristics of GaN transistors, and are able to operate at higher frequencies while reducing energy loss during the conversion process. In addition, the application of gallium nitride also includes achieving smaller size and lighter weight, which is a huge advantage for portable electronic devices.

[0005] Therefore, developing a gallium nitride-based power drive control circuit to improve power conversion efficiency and overall system performance has become a research hotspot in the industry. Therefore, the present invention proposes a gallium nitride power drive control circuit. Summary of the invention

[0006] In view of the problems in the related art, the present invention proposes a gallium nitride power drive control circuit to overcome the above technical problems existing in the existing related art.

[0007] To this end, the specific technical solution adopted by the present invention is as follows:

[0008] A gallium nitride power supply drive control circuit comprises an input rectifying and filtering circuit, a PWM control circuit, a gallium nitride switch tube drive circuit, a feedback control circuit and an output rectifying and filtering circuit; wherein the output end of the input rectifying and filtering circuit is connected to the input end of the PWM control circuit, the output end of the PWM control circuit is connected to the input end of the gallium nitride switch tube drive circuit, the output end of the gallium nitride switch tube drive circuit is connected to the input end of the output rectifying and filtering circuit, the output end of the output rectifying and filtering circuit is connected to the input end of the feedback control circuit, and the output end of the feedback control circuit is connected to the input end of the PWM control circuit.

[0009] Furthermore, the PWM control circuit includes a chip U1, a resistor R1, a resistor RP, a diode D1, a diode D2, a capacitor C1 and a capacitor C2; wherein, the first pin of the chip U1 is respectively connected to one end of the capacitor C1 and one end of the capacitor C2 and is grounded, and the second pin of the chip U1 is respectively connected to the sixth pin of the chip U1, the other end of the capacitor C2 and the sliding end of the resistor RP; the fourth pin of the chip U1 is respectively connected to the eighth pin of the chip U1, one end of the resistor R1 and the positive power supply VCC, and the fifth pin of the chip U1 is connected to the other end of the capacitor C1; the seventh pin of the chip U1 is respectively connected to the other end of the resistor R1, the positive electrode of the diode D2 and the negative electrode of the diode D1, the positive electrode of the diode D1 is connected to one end of the resistor RP, and the negative electrode of the diode D2 is connected to the other end of the resistor RP.

[0010] Furthermore, the chip U1 is of model NE555P, the resistor RP is a sliding resistor, and both the diode D1 and the diode D2 are voltage regulator diodes 1N4148.

[0011] Further, the GaN switch tube driving circuit includes an inductor L, an input capacitor Cin, an output capacitor Cout, a GaN transistor Q1, a GaN transistor Q2, a GaN transistor Q3 and a GaN transistor Q4; wherein, the two ends of the input capacitor Cin are respectively connected to the positive and negative electrodes of the input power supply, and the two ends of the output capacitor Cout are respectively connected to the positive and negative electrodes of the output end; the source of the GaN transistor Q1 is connected to the source of the GaN transistor Q2, and the drain of the GaN transistor Q1 is connected to the drain of the GaN transistor Q3; the drain of the GaN transistor Q2 is connected to the drain of the GaN transistor Q4, and the source of the GaN transistor Q4 is connected to the source of the GaN transistor Q3; the inductor L is connected between the drain of the GaN transistor Q1 and the drain of the GaN transistor Q3.

[0012] Furthermore, the gallium nitride transistor Q1, the gallium nitride transistor Q2 and the inductor L form a synchronous BUCK step-down circuit, and the gallium nitride transistor Q3, the gallium nitride transistor Q4 and the inductor L form a synchronous BOOST step-up circuit.

[0013] Furthermore, the feedback control circuit includes an operational amplifier U2, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C3, a capacitor C4 and a capacitor C5; wherein, a first pin of the operational amplifier U2 is connected to one end of the resistor R5, a second pin of the operational amplifier U2 is connected to one end of the resistor R4, and the other end of the resistor R4 is respectively connected to the other end of the resistor R5 and one end of the capacitor C5; a third pin of the operational amplifier U2 is respectively connected to one end of the resistor R2 and one end of the capacitor C4, the other end of the capacitor C4 is grounded, and the other end of the resistor R2 is respectively connected to the other end of the capacitor C5 and one end of the resistor R3; a fourth pin of the operational amplifier U2 is connected to one end of the capacitor C3, the other end of the capacitor C3 is grounded, and the eleventh pin of the operational amplifier U2 is grounded.

[0014] Furthermore, the model of the operational amplifier U2 is LM324.

[0015] The beneficial effects of the present invention are:

[0016] 1) The present invention realizes high-efficiency and high-stability power conversion by integrating high-efficiency gallium nitride transistors and precise PWM control.

[0017] 2) The low conduction loss and high switching speed of the gallium nitride transistor of the present invention greatly reduce energy loss and improve overall efficiency.

[0018] 3) The present invention can adapt to a wider input voltage range and meet the voltage requirements of different devices through synchronous BUCK and BOOST circuit design.

[0019] 4) The feedback control circuit of the present invention can quickly respond to load changes, adjust the output in real time, and ensure the stability and reliability of the power supply output. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1is a structural block diagram of a gallium nitride power supply driving control circuit according to an embodiment of the present invention;

[0022] Figure 2 is a circuit diagram of a PWM control circuit in a gallium nitride power supply drive control circuit according to an embodiment of the present invention;

[0023] Figure 3 is a circuit diagram of a gallium nitride switch tube driving circuit in a gallium nitride power supply driving control circuit according to an embodiment of the present invention;

[0024] Figure 4 Detailed description is a circuit diagram of a feedback control circuit in a gallium nitride power supply drive control circuit according to an embodiment of the present invention.

[0025] In the figure:

[0026] 1. Input rectification and filtering circuit; 2. PWM control circuit; 3. GaN switch tube drive circuit; 4. Feedback control circuit; 5. Output rectification and filtering circuit. DETAILED DESCRIPTION

[0027] To further illustrate each embodiment, the present invention provides drawings, which are part of the disclosure of the present invention and are mainly used to illustrate the embodiments and can be used in conjunction with the relevant descriptions in the specification to explain the operating principles of the embodiments. With reference to these contents, ordinary technicians in the field should be able to understand other possible implementations and advantages of the present invention. The components in the figures are not drawn to scale, and similar component symbols are generally used to represent similar components.

[0028] According to an embodiment of the present invention, a gallium nitride power supply driving control circuit is provided.

[0029] The present invention will now be further described with reference to the accompanying drawings and specific embodiments. Figure 1-Figure 4 As shown, the gallium nitride power supply drive control circuit according to an embodiment of the present invention includes an input rectification and filtering circuit 1, a PWM control circuit 2, a gallium nitride switch tube drive circuit 3, a feedback control circuit 4 and an output rectification and filtering circuit 5; wherein, the output end of the input rectification and filtering circuit 1 is connected to the input end of the PWM control circuit 2, the output end of the PWM control circuit 2 is connected to the input end of the gallium nitride switch tube drive circuit 3, the output end of the gallium nitride switch tube drive circuit 3 is connected to the input end of the output rectification and filtering circuit 5, the output end of the output rectification and filtering circuit 5 is connected to the input end of the feedback control circuit 4, and the output end of the feedback control circuit 4 is connected to the input end of the PWM control circuit 2.

[0030] Specifically, the above-mentioned GaN power supply drive control circuit includes an input rectification and filtering circuit, a PWM control circuit, a GaN switch tube drive circuit, a feedback control circuit and an output rectification and filtering circuit. This solution uses PWM technology to effectively control the switching of GaN transistors to achieve high-efficiency power conversion.

[0031] Among them, the input rectifier and filter circuit converts the AC input voltage into a smooth DC voltage to provide a stable input for the subsequent PWM control circuit; the PWM control circuit uses the NE555P timer chip to generate precise PWM control signals and regulate the switching time of the switch tube to optimize the power conversion efficiency; the gallium nitride switch tube drive circuit uses multiple gallium nitride transistors to build efficient synchronous BUCK and BOOST converters, which can increase or decrease the voltage level as needed; the feedback control circuit monitors the output voltage and current through the LM324 operational amplifier and the related sensor feedback network, and adjusts the PWM signal in real time to ensure output stability; the output rectifier and filter circuit smoothes the converted pulse voltage into a DC output to supply power to the load equipment.

[0032] In one embodiment, the PWM control circuit 2 includes a chip U1, a resistor R1, a resistor RP, a diode D1, a diode D2, a capacitor C1 and a capacitor C2; wherein the first pin of the chip U1 is respectively connected to one end of the capacitor C1 and one end of the capacitor C2 and is grounded, the second pin of the chip U1 is respectively connected to the sixth pin of the chip U1, the other end of the capacitor C2 and the sliding end of the resistor RP; the fourth pin of the chip U1 is respectively connected to the eighth pin of the chip U1, one end of the resistor R1 and the positive electrode VCC of the power supply, the fifth pin of the chip U1 is connected to the other end of the capacitor C1; the seventh pin of the chip U1 is respectively connected to the other end of the resistor R1, the positive electrode of the diode D2 and the negative electrode of the diode D1, the positive electrode of the diode D1 is connected to one end of the resistor RP, and the negative electrode of the diode D2 is connected to the other end of the resistor RP. The model of the chip U1 is NE555P, and the resistor RP is a sliding resistor. The diode D1 and the diode D2 are both voltage regulator diodes 1N4148.

[0033] Specifically, the PWM control circuit uses the NE555 timer as the core of the PWM control circuit. The following is the principle of the PWM control circuit:

[0034] NE555 timer: The timer is used here to generate an adjustable pulse width signal. By adjusting the external resistors and capacitors connected to the NE555 (such as resistor R1 and capacitor C1), the frequency and duty cycle of the output pulse can be adjusted; resistor R1 and RP (sliding resistor): used to set the time constant of the NE555, affecting the width of the pulse; capacitors C1 and C2: stabilize the operation of the timer and determine the rise and fall time of the pulse; diodes D1 and D2 (such as 1N4148): used to form a feedback loop to protect the NE555 from voltage surges and ensure the stability of the PWM signal.

[0035] In one embodiment, the GaN switch tube driving circuit 3 includes an inductor L, an input capacitor Cin, an output capacitor Cout, a GaN transistor Q1, a GaN transistor Q2, a GaN transistor Q3 and a GaN transistor Q4; wherein the two ends of the input capacitor Cin are respectively connected to the positive and negative electrodes of the input power supply, and the two ends of the output capacitor Cout are respectively connected to the positive and negative electrodes of the output end; the source of the GaN transistor Q1 is connected to the source of the GaN transistor Q2, and the drain of the GaN transistor Q1 is connected to the drain of the GaN transistor Q3; the drain of the GaN transistor Q2 is connected to the drain of the GaN transistor Q4, and the source of the GaN transistor Q4 is connected to the source of the GaN transistor Q3; the inductor L is connected between the drain of the GaN transistor Q1 and the drain of the GaN transistor Q3. The gallium nitride transistor Q1, the gallium nitride transistor Q2 and the inductor L form a synchronous BUCK step-down circuit, and the gallium nitride transistor Q3, the gallium nitride transistor Q4 and the inductor L form a synchronous BOOST step-up circuit.

[0036] Specifically, the GaN switch tube driving circuit is centered around a group of GaN transistors (Q1, Q2, Q3, Q4), where the inductor L plays the role of energy storage and output voltage smoothing in the synchronous BUCK and BOOST circuits; the input and output capacitors Cin and Cout help stabilize the power input and output and filter high-frequency noise; the GaN transistors Q1-Q4: these high-efficiency switching elements are used to switch quickly in the circuit, thereby controlling the efficiency and output characteristics of power conversion. Q1 and Q2 constitute a synchronous BUCK circuit, and Q3 and Q4 constitute a synchronous BOOST circuit.

[0037] In one embodiment, the feedback control circuit 4 includes an operational amplifier U2, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C3, a capacitor C4 and a capacitor C5; wherein the first pin of the operational amplifier U2 is connected to one end of the resistor R5, the second pin of the operational amplifier U2 is connected to one end of the resistor R4, and the other end of the resistor R4 is respectively connected to the other end of the resistor R5 and one end of the capacitor C5; the third pin of the operational amplifier U2 is respectively connected to one end of the resistor R2 and one end of the capacitor C4, the other end of the capacitor C4 is grounded, and the other end of the resistor R2 is respectively connected to the other end of the capacitor C5 and one end of the resistor R3; the fourth pin of the operational amplifier U2 is connected to one end of the capacitor C3, the other end of the capacitor C3 is grounded, and the eleventh pin of the operational amplifier U2 is grounded. The model of the operational amplifier U2 is LM324.

[0038] Specifically, the feedback control circuit is based on the LM324 operational amplifier and some basic passive components. The following is a detailed description of the feedback control circuit:

[0039] Operational amplifier LM324: as the core of signal amplification and processing, it is used to receive signals collected from the output end sensor (voltage and current) and perform necessary amplification processing; resistors R2, R3, R4, R5 and capacitors C3, C4, C5: used to set and stabilize the gain of the operational amplifier, as well as filter the noise in the signal to ensure the accuracy and stability of the feedback signal; feedback mechanism: by comparing the processed signal with the set threshold, the operational amplifier outputs a control signal to the PWM control circuit, and adjusts the PWM signal as needed to maintain the stability of the output.

[0040] In summary, with the aid of the above technical solutions of the present invention, the present invention realizes high-efficiency and high-stability power conversion by integrating efficient gallium nitride transistors and precise PWM control. In addition, the low conduction loss and high switching speed of the gallium nitride transistor of the present invention greatly reduce energy loss and improve overall efficiency. In addition, the present invention can adapt to a wider input voltage range and meet the voltage requirements of different devices through the synchronous BUCK and BOOST circuit design. In addition, the feedback control circuit of the present invention can quickly respond to load changes, adjust the output in real time, and ensure the stability and reliability of the power output.

[0041] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A gallium nitride power drive control circuit, It is characterized in that It comprises an input rectifying and filtering circuit (1), a PWM control circuit (2), a gallium nitride switch tube driving circuit (3), a feedback control circuit (4) and an output rectifying and filtering circuit (5); The output end of the input rectifying and filtering circuit (1) is connected to the input end of the PWM control circuit (2), the output end of the PWM control circuit (2) is connected to the input end of the gallium nitride switch tube drive circuit (3), the output end of the gallium nitride switch tube drive circuit (3) is connected to the input end of the output rectifying and filtering circuit (5), the output end of the output rectifying and filtering circuit (5) is connected to the input end of the feedback control circuit (4), and the output end of the feedback control circuit (4) is connected to the input end of the PWM control circuit (2).

2. A gallium nitride power supply drive control circuit according to claim 1, It is characterized in that The PWM control circuit (2) comprises a chip U1, a resistor R1, a resistor RP, a diode D1, a diode D2, a capacitor C1 and a capacitor C2; The first pin of the chip U1 is respectively connected to one end of the capacitor C1 and one end of the capacitor C2 and is grounded, and the second pin of the chip U1 is respectively connected to the sixth pin of the chip U1, the other end of the capacitor C2 and the sliding end of the resistor RP; The fourth pin of the chip U1 is connected to the eighth pin of the chip U1, one end of the resistor R1 and the positive electrode VCC of the power supply, and the fifth pin of the chip U1 is connected to the other end of the capacitor C1; The seventh pin of the chip U1 is respectively connected to the other end of the electron R1, the anode of the diode D2 and the cathode of the diode D1, the anode of the diode D1 is connected to one end of the resistor RP, and the cathode of the diode D2 is connected to the other end of the resistor RP.

3. A gallium nitride power supply drive control circuit according to claim 2, It is characterized in that The model of the chip U1 is NE555P, and the resistor RP is a sliding resistor.

4. The gallium nitride power supply drive control circuit according to claim 2, It is characterized in that The diode D1 and the diode D2 are both voltage regulator diodes 1N4148.

5. The gallium nitride power supply drive control circuit according to claim 1, It is characterized in that The gallium nitride switch tube driving circuit (3) comprises an inductor L, an input capacitor Cin, an output capacitor Cout, a gallium nitride transistor Q1, a gallium nitride transistor Q2, a gallium nitride transistor Q3 and a gallium nitride transistor Q4; Wherein, the two ends of the input capacitor Cin are respectively connected to the positive and negative electrodes of the input power supply, and the two ends of the output capacitor Cout are respectively connected to the positive and negative electrodes of the output end; The source of the gallium nitride transistor Q1 is connected to the source of the gallium nitride transistor Q2, and the drain of the gallium nitride transistor Q1 is connected to the drain of the gallium nitride transistor Q3; The drain of the gallium nitride transistor Q2 is connected to the drain of the gallium nitride transistor Q4, and the source of the gallium nitride transistor Q4 is connected to the source of the gallium nitride transistor Q3; The inductor L is connected between the drain of the GaN transistor Q1 and the drain of the GaN transistor Q3 .

6. A gallium nitride power supply drive control circuit according to claim 5, It is characterized in that The gallium nitride transistor Q1, the gallium nitride transistor Q2 and the inductor L form a synchronous BUCK step-down circuit, and the gallium nitride transistor Q3, the gallium nitride transistor Q4 and the inductor L form a synchronous BOOST step-up circuit.

7. The gallium nitride power supply drive control circuit according to claim 1, It is characterized in that The feedback control circuit (4) comprises an operational amplifier U2, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C3, a capacitor C4 and a capacitor C5; The first pin of the operational amplifier U2 is connected to one end of the resistor R5, the second pin of the operational amplifier U2 is connected to one end of the resistor R4, and the other end of the resistor R4 is respectively connected to the other end of the resistor R5 and one end of the capacitor C5; The third pin of the operational amplifier U2 is respectively connected to one end of the resistor R2 and one end of the capacitor C4, the other end of the capacitor C4 is grounded, and the other end of the resistor R2 is respectively connected to the other end of the capacitor C5 and one end of the resistor R3; The fourth pin of the operational amplifier U2 is connected to one end of the capacitor C3 , the other end of the capacitor C3 is grounded, and the eleventh pin of the operational amplifier U2 is grounded.

8. The gallium nitride power supply drive control circuit according to claim 7, It is characterized in that The model of the operational amplifier U2 is LM324.

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