Radio frequency power amplifier and radio frequency front end module

Abstract

The application discloses a radio frequency power amplifier, which comprises a first power amplifier circuit, a second power amplifier circuit and a voltage synthesis network, wherein the voltage synthesis network comprises a first transformer, a second transformer and a first capacitor unit; the first transformer comprises a first winding and a second winding; the second transformer comprises a third winding and a fourth winding; the first power amplifier circuit is connected with the first winding; the second power amplifier circuit is connected with the third winding; a first end of the second winding is connected to a signal output end; a second end of the second winding is connected with a first end of the fourth winding; and a second end of the fourth winding is connected to a grounding end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding; thus, the problem of excessive loss caused by poor balance of the radio frequency power amplifier can be solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of radio frequency technology, in particular to a radio frequency power amplifier and a radio frequency front-end module. BACKGROUND

[0002] The radio frequency front-end module is widely used in the field of wireless communication, wherein the radio frequency power amplifier as the core unit of the radio frequency front-end module has a great influence on the signal output index of the radio frequency front-end module. The design index of the radio frequency power amplifier generally includes output power, loss, efficiency, gain, bandwidth and linearity, etc. In particular, the loss and efficiency have always been the focus of attention, and the power loss of the radio frequency power amplifier becomes an important performance index for measuring the operating efficiency of the power amplifier, which plays a crucial role in the entire communication system.

[0003] SUMMARY

[0004] The embodiments of the present application provide a radio frequency power amplifier and a radio frequency front-end module, which solve the problem of excessive loss of the radio frequency power amplifier.

[0005] A radio frequency power amplifier, comprising a first power amplification circuit, a second power amplification circuit and a voltage synthesis network, the voltage synthesis network comprising a first transformer, a second transformer and a first capacitor unit, the first transformer comprising a first winding and a second winding, the second transformer comprising a third winding and a fourth winding; the first power amplification circuit is connected with the first winding, the second power amplification circuit is connected with the third winding, a first end of the second winding is connected to a signal transmission end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding.

[0006] Further, the output end of the first power amplification circuit is connected with the first winding, the output end of the second power amplification circuit is connected with the third winding, and the first capacitor unit is configured to balance the impedance between the output end of the first power amplification circuit and the output end of the second power amplification circuit.

[0007] Alternatively, the input end of the first power amplification circuit is connected with the first winding, the input end of the second power amplification circuit is connected with the third winding, and the first capacitor unit is configured to balance the impedance between the input end of the first power amplification circuit and the input end of the second power amplification circuit.

[0008] Further, an output terminal of the first power amplifier circuit is connected to the first winding, an output terminal of the second power amplifier circuit is connected to the third winding, and the first capacitance unit is configured to make the output terminal impedance of the first power amplifier circuit and the output terminal impedance of the second power amplifier circuit the same.

[0009] Alternatively, an input terminal of the first power amplifier circuit is connected to the first winding, an input terminal of the second power amplifier circuit is connected to the third winding, and the first capacitance unit is configured to make the input terminal impedance of the first power amplifier circuit and the input terminal impedance of the second power amplifier circuit the same.

[0010] Further, the first capacitance unit is configured to compensate for a capacitance value of an equivalent parasitic capacitance of the second transformer equivalently transformed at the first end of the fourth winding.

[0011] Further, the capacitance value of the first capacitance unit ranges from (0*CP2, 2*CP2), where CP2 is the capacitance value of the equivalent parasitic capacitance of the second transformer equivalently transformed at the first end of the fourth winding.

[0012] Further, the capacitance value of the first capacitance unit ranges from (0, 20 pF).

[0013] Further, the first power amplifier circuit includes a first power amplifier transistor, the second power amplifier circuit includes a second power amplifier transistor, the first power amplifier transistor is connected to the first end of the first winding, the second end of the first winding is connected to a ground terminal or a power supply terminal, the second power amplifier transistor is connected to the first end of the third winding, and the second end of the third winding is connected to a ground terminal or a power supply terminal.

[0014] Further, the phase difference between the first radio frequency signal at the first end of the first winding and the second radio frequency signal at the first end of the third winding ranges from [0°, 10°].

[0015] Further, the first power amplifier circuit includes a first power amplifier transistor and a third power amplifier transistor, the second power amplifier circuit includes a second power amplifier transistor and a fourth power amplifier transistor, the first power amplifier transistor is connected to the first end of the first winding, the third power amplifier transistor is connected to the second end of the first winding, the second power amplifier transistor is connected to the first end of the third winding, and the fourth power amplifier transistor is connected to the second end of the third winding.

[0016] Further, a difference between a phase of the first radio frequency signal at the first end of the first winding and a phase of the second radio frequency signal at the first end of the third winding ranges from 0° to 10°, and a difference between a phase of the third radio frequency signal at the second end of the first winding and a phase of the fourth radio frequency signal at the second end of the third winding ranges from 0° to 10°.

[0017] Further, the second winding includes a first coil segment and a second coil segment connected in series, and the fourth winding includes a third coil segment and a fourth coil segment connected in series, a first end of the first coil segment is connected to the signal output end, a second end of the first coil segment is connected to a first end of the second coil segment, a second end of the second coil segment is connected to a first end of the third coil segment, a second end of the third coil segment is connected to a first end of the fourth coil segment, and a second end of the fourth coil segment is grounded; and the first capacitor unit is connected in parallel to the first coil segment.

[0018] Further, the first power amplification transistor, the third power amplification transistor, the second power amplification transistor, and the fourth power amplification transistor are BJT tubes, each including a base, a collector, and an emitter.

[0019] The base of the first power amplification transistor receives an input first radio frequency signal, the collector of the first power amplification transistor is connected to the first end of the first winding, and the emitter of the first power amplification transistor is grounded. The base of the third power amplification transistor receives an input third radio frequency signal, the collector of the third power amplification transistor is connected to the second end of the first winding, and the emitter of the third power amplification transistor is grounded. The base of the second power amplification transistor receives an input second radio frequency signal, the collector of the second power amplification transistor is connected to the first end of the third winding, and the emitter of the second power amplification transistor is grounded. The base of the fourth power amplification transistor receives an input fourth radio frequency signal, the collector of the fourth power amplification transistor is connected to the second end of the third winding, and the emitter of the fourth power amplification transistor is grounded.

[0020] Alternatively, the base of the first power amplifier transistor is connected to the first end of the first winding, the collector of the first power amplifier transistor outputs a first radio frequency signal, and the emitter of the first power amplifier transistor is grounded; the base of the third power amplifier transistor is connected to the second end of the first winding, the collector of the third power amplifier transistor outputs a third radio frequency signal, and the emitter of the third power amplifier transistor is grounded; the base of the second power amplifier transistor is connected to the first end of the third winding, the collector of the second power amplifier transistor outputs a second radio frequency signal, and the emitter of the second power amplifier transistor is grounded; and the base of the fourth power amplifier transistor is connected to the second end of the third winding, the collector of the fourth power amplifier transistor outputs a fourth radio frequency signal, and the emitter of the fourth power amplifier transistor is grounded.

[0021] Further, the first transformer further comprises a fifth winding, and the second transformer further comprises a sixth winding, the fifth winding and the sixth winding are connected in series, the fifth winding is coupled with the first winding and the second winding, the sixth winding is coupled with the third winding and the fourth winding, and the second end of the fourth winding is connected to a ground end through the fifth winding and the sixth winding connected in series.

[0022] Further, the second end of the fourth winding is connected to the second end of the sixth winding, the first end of the sixth winding is connected to the second end of the fifth winding, and the first end of the fifth winding is grounded, or the second end of the fourth winding is connected to the first end of the fifth winding, the second end of the fifth winding is connected to the first end of the sixth winding, and the second end of the sixth winding is grounded.

[0023] A radio frequency front-end module includes a substrate, a first chip and a second chip disposed on the substrate, the first chip includes a first power amplifier circuit and a second power amplifier circuit, the second chip includes a first transformer, a second transformer and a first capacitor unit, the first transformer includes a first winding and a second winding, the second transformer includes a third winding and a fourth winding, the first power amplifier circuit is connected to a first pad of the first chip, the first pad is connected to a second pad of the second chip, the second pad is connected to the first winding, the second power amplifier circuit is connected to a third pad of the first chip, the third pad is connected to a fourth pad of the second chip, and the fourth pad is connected to the third winding; a first end of the second winding is connected to a signal output end, a second end of the second winding is connected to a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; and the first capacitor unit is connected in parallel to at least part of a coil of the second winding.

[0024] Further, the first chip is a heterojunction bipolar transistor chip, and the second chip is an integrated product development chip.

[0025] A radio frequency front-end module includes a substrate, and a first chip, a first transformer, a second transformer and a first capacitor unit disposed on the substrate, the first chip includes a first power amplifier circuit and a second power amplifier circuit, the first transformer includes a first winding and a second winding, the second transformer includes a third winding and a fourth winding, the first power amplifier circuit is connected with a first pad of the first chip, the first pad is connected to a second pad of the substrate, the second pad is connected with the first winding, the second power amplifier circuit is connected with a third pad of the first chip, the third pad is connected to a fourth pad of the substrate, and the fourth pad is connected with the third winding; a first end of the second winding is connected to a signal output end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding.

[0026] Further, the first capacitor unit is a patch capacitor unit.

[0027] The present application provides a radio frequency power amplifier, including a first power amplifier circuit, a second power amplifier circuit and a voltage synthesis network, the voltage synthesis network includes a first transformer, a second transformer and a first capacitor unit, the first transformer includes a first winding and a second winding, the second transformer includes a third winding and a fourth winding; the first power amplifier circuit is connected with the first winding, the second power amplifier circuit is connected with the third winding, a first end of the second winding is connected to a signal output end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding; thereby the balance problem caused by the inconsistency of voltage amplitude and phase between the two ends of the second winding and the two ends of the fourth winding can be improved, and the problem of excessive loss caused by poor balance of the voltage synthesis network in the radio frequency power amplifier is solved, and the overall performance of the radio frequency power amplifier is optimized. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the description of the embodiments of the present application. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0029] Figure 1 is a circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0030] Figure 2 is another circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0031] Figure 3 is another circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0032] Figure 4 is another circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0033] Figure 5 is another circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0034] Figure 6 is another circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0035] Figure 7 is another circuit schematic diagram of a radio frequency power amplifier in an embodiment of the present application;

[0036] Figure 8 is another circuit schematic diagram of a radio frequency front-end module in an embodiment of the present application;

[0037] Figure 9 is another circuit schematic diagram of a radio frequency front-end module in an embodiment of the present application;

[0038] Figure 10 is a simulation diagram of a radio frequency power amplifier / radio frequency front-end module in an embodiment of the present application;

[0039] Figure 11 is a simulation diagram of a radio frequency power amplifier / radio frequency front-end module in an embodiment of the present application;

[0040] Figure 12 is a simulation diagram of a radio frequency power amplifier / radio frequency front-end module in an embodiment of the present application.

[0041] In the drawings: 10, first power amplification circuit; 20, second power amplification circuit; first transformer, 50; second transformer, 60; 70, first capacitor unit; 11, first power amplification transistor; 12, second power amplification transistor; 13, third power amplification transistor; 14, fourth power amplification transistor; S11, first winding; S12, second winding; S13, third winding; S14, fourth winding; 100, first chip; 200, second chip; 300, substrate. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of the present application.

[0043] It should be understood that the present application can be implemented in various forms, and should not be interpreted as being limited to the embodiments set forth herein. On the contrary, the embodiments are provided so that the disclosure will be complete and full, and will fully convey the scope of the present application to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions can be exaggerated for clarity. The same reference numbers represent the same elements throughout the drawings.

[0044] It should be understood that when an element or layer is referred to as being "on", "adjacent", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or one intervening element or layer can be present. In contrast, when an element is referred to as being "directly on", "directly adjacent", "directly connected to", or "directly coupled to" another element or layer, then there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.

[0045] Spatial relationship terms, such as "below", "under", "lower", "underneath", "above", "upper", and the like, can be used herein for ease of description to describe the relationship of one element or feature to another element(s) or feature(s) as illustrated in the drawings. It will be understood that the spatial relationship terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. For example, if the device in the drawings is turned over, the element or feature that is described as below or under other elements or features would then be oriented above the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptions used herein interpreted accordingly.

[0046] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of associated items.

[0047] For a thorough understanding of the present application, reference will be made to the following description taken in conjunction with the accompanying drawings, in which:

[0048] A radio frequency power amplifier, as shown in Figure 1 The first power amplifier circuit 10, the second power amplifier circuit 20 and the voltage combining network, the voltage combining network includes a first transformer 50, a second transformer 60 and a first capacitor unit 70, the first transformer 50 includes a first winding S11 and a second winding S12, the second transformer 60 includes a third winding S13 and a fourth winding S14; the first power amplifier circuit 10 is connected with the first winding S11, the second power amplifier circuit 20 is connected with the third winding S13, the first end of the second winding S12 is connected to the signal transmission end, the second end of the second winding S12 is connected with the first end of the fourth winding S14, and the second end of the fourth winding S14 is connected to the ground end; wherein the first capacitor unit 70 is connected in parallel with at least part of the coil of the second winding S12.

[0049] The first power amplifier circuit 10 can be any one of a single-ended power amplifier circuit, a differential power amplifier circuit, a Doherty power amplifier circuit, a balanced power amplifier circuit, etc. Similarly, the second power amplifier circuit 20 can be any one of a single-ended power amplifier circuit, a differential power amplifier circuit, a Doherty power amplifier circuit, etc.

[0050] In at least one embodiment, the voltage synthesis network comprises a first transformer 50, a second transformer 60 and a first capacitor unit 70. The first transformer 50 is connected with the first winding S11 of the first power amplifier circuit 10, the second transformer 60 is connected with the third winding S13 of the second power amplifier circuit 20, and the second winding S12 of the first transformer 50 is connected with the fourth winding S14 of the second transformer 60, so as to synthesize the at least one first signal output by the first power amplifier circuit 10 and the at least one second signal output by the second power amplifier circuit 20 in a voltage synthesis manner, and finally form an output signal output to a signal transmission end (for example, a signal output end). Alternatively, an input signal of the signal transmission end (for example, a signal input end) is divided into at least one first signal transmitted to the first power amplifier circuit and at least one second signal transmitted to the second power amplifier circuit.

[0051] In at least one embodiment, the voltage of the first end of the first winding S11 of the first transformer is the same as the voltage of the first end of the third winding S13 of the second transformer, and the voltage of the first end of the second winding S12 is different from the voltage of the first end of the fourth winding S14. Specifically, due to the equivalent parasitic capacitance of the second transformer S13 being equivalent to the first end of the fourth winding S14, the current I1 of the second winding S12 of the first transformer is greater than the current I2 of the fourth winding S14 of the second transformer, so that the voltage amplitude and phase of the two ends of the second winding are inconsistent with the two ends of the fourth winding, thereby affecting the balance of the radio frequency power amplifier.

[0052] To this end, the first capacitor unit 70 is connected in parallel with at least part of the coil of the second winding S12, so as to compensate for the equivalent parasitic capacitance of the second transformer S13 equivalent to the first end of the fourth winding S14, thereby improving the balance problem caused by the inconsistency of the voltage amplitude and phase of the two ends of the second winding with the two ends of the fourth winding, and solving the problem of excessive loss of the voltage synthesis network of the radio frequency power amplifier due to poor balance, and optimizing the overall performance of the radio frequency power amplifier.

[0053] The connection of the first capacitor unit 70 in parallel with at least a portion of the coil of the second winding S12 can be understood as the first capacitor unit 70 being connected in parallel with any segment of the coil of the second winding. This coil can be a complete coil of the second winding or a partial coil. The first capacitor element can be a physical capacitor element or a specific structure equivalent to a capacitor element. The capacitance value of the first capacitor element is related to the capacitance value CP2 of the equivalent parasitic capacitance transformed by the second transformer S13 at the first end of the fourth winding S14. Specifically, the capacitance value of the first capacitor element is positively correlated with the capacitance value CP2 of the equivalent parasitic capacitance transformed by the second transformer S13 at the first end of the fourth winding S14, that is, the larger the capacitance value CP2 of the equivalent parasitic capacitance transformed by the second transformer S13 at the first end of the fourth winding S14, the larger the capacitance value of the first capacitor element.

[0054] It should be noted that this embodiment does not specifically limit the implementation of the first transformer and the second transformer. The first transformer and the second transformer can be the same two transformers or two different transformers. The first transformer and the second transformer can be single-ended to single-ended transformers, single-ended to double-ended transformers, or double-ended to single-ended transformers.

[0055] The first and second windings of the first transformer can be wound on the same metal layer or different metal layers, and the third and fourth windings of the second transformer can be wound on the same metal layer or different metal layers. The turns ratio of the first and second windings and the turns ratio of the third and fourth windings can be the same or different.

[0056] As a preferred example, the first transformer and the second transformer are implemented in the same way. For example, the turns ratio of the first winding and the second winding is the same as the turns ratio of the third winding and the fourth winding, and the winding method of the first winding and the second winding is the same as the winding method of the third winding and the fourth winding; thereby, the balance of the RF power amplifier can be further improved, thereby reducing the power loss of the RF power amplifier.

[0057] For reference Figure 10 The image shown is a simulation diagram of the prior art without the addition of a first capacitor unit, where the lower... Figure 10 The first graph shows the imaginary impedance on the ordinate and the operating frequency on the abscissa. The second graph shows the real impedance on the ordinate and the operating frequency on the abscissa. 'a' represents the curve of the first power amplifier circuit, and 'b' represents the curve of the second power amplifier circuit. Figure 10It can be seen that the imaginary part impedance of the first power amplifier circuit and the imaginary part impedance of the second power amplifier circuit are not the same in the wide frequency band range, and the real part impedance of the first power amplifier circuit and the real part impedance of the second power amplifier circuit are also not the same in the wide frequency band range, thereby causing poor balance of the radio frequency power amplifier.

[0058] Referring to FIG. 1, it is a simulation diagram of the radio frequency power amplifier in the prior art without the first capacitor unit. Figure 11 The vertical coordinate of the first diagram of FIG. 1 is the real part impedance, and the horizontal coordinate is the working frequency. The vertical coordinate of the second diagram is the imaginary part impedance, and the horizontal coordinate is the working frequency. a is the curve of the first power amplifier circuit, and b is the curve of the second power amplifier circuit. Figure 10 It can be seen that the imaginary part impedance and the real part impedance of the first power amplifier circuit are both overlapped with the imaginary part impedance and the real part impedance of the second power amplifier circuit in the wide frequency band range, that is, the imaginary part impedance and the real part impedance of the first power amplifier circuit are the same as the imaginary part impedance and the real part impedance of the first power amplifier circuit in the wide frequency band range, thereby improving the balance of the radio frequency power amplifier. Figure 11 Referring to FIG. 2, it is a simulation diagram of the power efficiency of the radio frequency power amplifier in the wide frequency band range.

[0059] The vertical coordinate of the first diagram of FIG. 2 is the power efficiency, and the horizontal coordinate is the working frequency. M1 is the curve of the radio frequency power amplifier in the prior art without the first capacitor unit, and N1 is the curve of the radio frequency power amplifier in the present application with the first capacitor unit. Figure 12 It can be seen that the power efficiency of the radio frequency power amplifier in the present application with the first capacitor unit is obviously higher than the power efficiency of the radio frequency power amplifier in the prior art without the first capacitor unit. Figure 12 In the present embodiment, the radio frequency power amplifier comprises a first power amplifier circuit, a second power amplifier circuit and a voltage synthesis network. The voltage synthesis network comprises a first transformer, a second transformer and a first capacitor unit. The first transformer comprises a first winding and a second winding. The second transformer comprises a third winding and a fourth winding. The first power amplifier circuit is connected to the first winding. The second power amplifier circuit is connected to the third winding. A first end of the second winding is connected to a signal output end. A second end of the second winding is connected to a first end of the fourth winding. A second end of the fourth winding is connected to a ground end. The first capacitor unit is connected in parallel to at least part of the coils of the second winding. Thus, the balance problem caused by the inconsistency of the voltage amplitude and phase between the two ends of the second winding and the two ends of the fourth winding can be improved, thereby solving the problem of excessive loss of the voltage synthesis network caused by poor balance in the radio frequency power amplifier, and optimizing the overall performance of the radio frequency power amplifier.

[0060]

[0061] ​In one embodiment, the output of the first power amplifier circuit 10 is connected to the first winding S11, the output of the second power amplifier circuit 20 is connected to the third winding S13, and the first capacitor unit 70 is configured to balance the impedance between the output of the first power amplifier circuit 10 and the output of the second power amplifier circuit 20.

[0062] In at least one embodiment, referring to FIG. 1, Figure 1 As shown in FIG. 1, the first winding S11 of the first transformer 50 is connected to the output of the first power amplifier circuit 10, the third winding S13 of the second transformer 60 is connected to the output of the second power amplifier circuit 20, and the first transformer 50 and the second transformer 60 perform signal synthesis on at least one first signal output by the first power amplifier circuit 10 and at least one second signal output by the second power amplifier circuit 10 in a way of voltage synthesis, and finally form one radio frequency output signal output to the signal transmission end. Since at least part of the coils of the second winding in the first capacitor unit and the first transformer are connected in parallel, by reasonably configuring the capacitance value of the first capacitor unit, the impedance between the output of the first power amplifier circuit and the output of the second power amplifier circuit is balanced.

[0063] In at least one embodiment, referring to FIG. 1, Figure 2 As shown in FIG. 1, the input of the first power amplifier circuit 10 is connected to the first winding S11, the input of the second power amplifier circuit 20 is connected to the third winding S13, and the first capacitor unit 70 is configured to balance the impedance between the input of the first power amplifier circuit 10 and the input of the second power amplifier circuit 20.

[0064] Specifically, the first winding S11 of the first transformer is connected to the input of the first power amplifier circuit, the third winding S13 of the second transformer is connected to the input of the second power amplifier circuit, and the first transformer and the second transformer convert one radio frequency input signal of the radio frequency input end into at least one first signal and at least one second signal in a way of voltage synthesis, and transmit the at least one first signal and the at least one second signal to the first power amplifier circuit 10 and the second power amplifier circuit 10 respectively. Since at least part of the coils of the second winding in the first capacitor unit and the first transformer are connected in parallel, by reasonably configuring the capacitance value of the first capacitor unit, the impedance between the input of the first power amplifier circuit and the input of the second power amplifier circuit is balanced.

[0065] In at least one embodiment, the output of the first power amplifier circuit 10 is connected to the first winding Sll, the output of the second power amplifier circuit 20 is connected to the third winding S13, and the first capacitance unit 70 is configured to make the output impedance of the first power amplifier circuit 10 and the output impedance of the second power amplifier circuit 20 the same.

[0066] Specifically, by reasonably configuring the capacitance value of the first capacitance unit 70, the greater the capacitance value CP2 of the equivalent parasitic capacitance equivalently transformed by the second transformer S13 at the first end of the fourth winding S14, the greater the capacitance value of the first capacitance element; by making the capacitance value of the first capacitance unit the same as the capacitance value of the equivalent parasitic capacitance equivalently transformed by the second transformer S13 at the first end of the fourth winding S14, the impedance between the output of the first power amplifier circuit and the output of the second power amplifier circuit is made the same.

[0067] In at least one embodiment, the input of the first power amplifier circuit is connected to the first winding, the input of the second power amplifier circuit is connected to the third winding, and the first capacitance unit is configured to make the input impedance of the first power amplifier circuit and the input impedance of the second power amplifier circuit the same. Specifically, by reasonably configuring the capacitance value of the first capacitance unit, the greater the capacitance value CP2 of the equivalent parasitic capacitance equivalently transformed by the second transformer S13 at the first end of the fourth winding S14, the greater the capacitance value of the first capacitance element; by making the capacitance value of the first capacitance unit the same as the capacitance value of the equivalent parasitic capacitance equivalently transformed by the second transformer S13 at the first end of the fourth winding S14, the impedance between the input of the first power amplifier circuit and the input of the second power amplifier circuit is made the same.

[0068] In a specific embodiment, the first capacitance unit 70 is configured to compensate for the capacitance value of the equivalent parasitic capacitance equivalently transformed by the second transformer at the first end of the fourth winding.

[0069] In at least one embodiment, due to the equivalent parasitic capacitance of the second transformer S13 being equivalent transformed at the first end of the fourth winding S14, the current I1 of the second winding S12 of the first transformer is greater than the current I2 of the fourth winding S14 of the second transformer, so the voltage difference between the first winding S11 and the second winding S12 is greater than the voltage difference between the third winding S13 and the fourth winding S14, which in turn affects the balance of the radio frequency power amplifier. In view of this, the present application connects a parallel first capacitor unit at the second winding S12 of the first transformer, and the first capacitor unit is configured to compensate for the capacitance value of the equivalent parasitic capacitance of the second transformer S13 being equivalent transformed at the first end of the fourth winding S14. By reasonably configuring the capacitance value of the first capacitor unit, the balance of the radio frequency power amplifier is improved.

[0070] In a specific embodiment, the capacitance value of the first capacitor unit ranges from (0*CP2, 2*CP2), where CP2 is the capacitance value of the equivalent parasitic capacitance of the second transformer being equivalent transformed at the first end of the fourth winding.

[0071] In at least one embodiment, the capacitance value of the first capacitor unit is associated with the capacitance value of the equivalent parasitic capacitance of the second transformer being equivalent transformed at the first end of the fourth winding, and the capacitance value of the first capacitor unit ranges from (0*CP2, 2*CP2), where CP2 is the capacitance value of the equivalent parasitic capacitance of the second transformer being equivalent transformed at the first end of the fourth winding, i.e. the capacitance value of the first capacitor unit can be less than the capacitance value of the equivalent parasitic capacitance of the second transformer being equivalent transformed at the first end of the fourth winding, or it can be greater than the capacitance value of the equivalent parasitic capacitance of the second transformer being equivalent transformed at the first end of the fourth winding, but the capacitance value of the first capacitor unit must satisfy (0*CP2, 2*CP2). Wherein the equivalent parasitic capacitance CP2 generated by the second transformer can be measured. As an example, connect the first end and the second end of the primary winding of the second transformer in parallel connection after connecting the measurement port Vin, and make Vin=1V, and connect the first end and the second end of the secondary winding of the second transformer in parallel connection after grounding, so that the current input to the two ends of the primary winding of the second transformer can be measured, and then the equivalent parasitic capacitance Cp generated by the second transformer can be calculated by the formula Cp=2*pi*f*Vin / I in.

[0072] In at least one embodiment, the first power amplifier circuit and the second power amplifier circuit are balanced when the first power amplifier circuit and the second power amplifier circuit have the same output impedance, and the first capacitance unit has a capacitance value equal to an equivalent parasitic capacitance of the first end of the fourth winding.

[0073] In at least one embodiment, the second transformer generates an equivalent parasitic capacitance CP2 in a range of greater than 0 pF and less than 10 pF.

[0074] It can be understood that the capacitance value of the first capacitance unit is associated with the equivalent parasitic capacitance CP2 generated by the second transformer. The greater the equivalent parasitic capacitance CP2 generated by the second transformer, the greater the capacitance value of the first capacitance unit.

[0075] In at least one embodiment, the capacitance value Cp of the first capacitance unit is in a range of (0, 20 pF). Alternatively, the capacitance value of the first capacitance unit can be 3 pF, 5 pF, 7 pF, 14 pF, or 18 pF, etc.

[0076] In a specific embodiment, referring to FIG. 1, Figure 3 As shown in FIG. 1, the first power amplifier circuit 10 includes a first power amplifier transistor 11, and the second power amplifier circuit 20 includes a second power amplifier transistor 20. The first power amplifier transistor 11 is connected to the first end of the first winding S11, and the second end of the first winding S11 is connected to a ground terminal or a power supply terminal. The second power amplifier transistor 20 is connected to the first end of the third winding S13, and the second end of the third winding S13 is connected to a ground terminal or a power supply terminal.

[0077] When the second end of the first winding S11 is connected to the power supply end and the second end of the third winding S13 is connected to the power supply end, a first power supply voltage output by the power supply is transmitted to the first power amplifier transistor 11 through the first winding S11 of the power supply end to supply power to the first power amplifier transistor 11, and a second power supply voltage output by the power supply is transmitted to the second power amplifier transistor 20 through the third winding S13 of the power supply end to supply power to the second power amplifier transistor 20, without the need for an additional power supply inductance connected to the power supply end, so that the occupied area of the radio frequency power amplifier can be reduced and the integration of the radio frequency power amplifier can be optimized. It should be noted that, since the capacitor has the function of blocking direct current and passing alternating current, when the second end of the first winding S11 is connected to the power supply end and the second end of the third winding S13 is connected to the power supply end, there cannot be a capacitor element in the series path between the first power amplifier transistor 11 and the first winding S11, and for the same reason, there cannot be a capacitor element in the series path between the second power amplifier transistor 12 and the third winding S13.

[0078] In at least one embodiment, the first power amplification circuit and the second power amplification circuit are both single-ended power amplification circuits, and the first transformer and the second transformer are both single-ended transformers. The first power amplification circuit includes a first power amplifier transistor, and the second power amplification circuit includes a second power amplifier transistor. The first power amplifier transistor is connected to the first end of the first winding, and the second end of the first winding is connected to a ground end or a power supply end. The second power amplifier transistor is connected to the first end of the third winding, and the second end of the third winding is connected to a ground end or a power supply end. The first transformer and the second transformer jointly convert a first radio frequency signal in the first power amplifier transistor and a second radio frequency signal in the second power amplifier transistor into a radio frequency signal.

[0079] In at least one embodiment, the first power amplifier transistor can be a BJT tube or a MOS tube, and the second power amplifier transistor can be a BJT tube or a MOS tube. The type of the first power amplifier transistor and the second power amplifier transistor is not specifically limited in the embodiment.

[0080] In at least one embodiment, the phase difference between the first radio frequency signal at the first end of the first winding S11 and the second radio frequency signal at the first end of the third winding S13 is in the range of [0°, 10°].

[0081] In at least one embodiment, the phase of the first radio frequency signal transmitted in the first power amplifier transistor 11 and the phase of the second radio frequency signal transmitted in the second power amplifier transistor 12 are co-directional phases. The first power amplifier transistor is connected to the first end of the first winding, and the second power amplifier transistor is connected to the first end of the third winding. Therefore, the phase of the first radio frequency signal at the first end of the first winding and the phase of the second radio frequency signal at the first end of the third winding are also co-directional phases. In this embodiment, the difference between the phase of the first radio frequency signal at the first end of the first winding and the phase of the second radio frequency signal at the first end of the third winding is in the range of [0°, 10°]. For example, the phase of the first radio frequency signal at the first end of the first winding is 180°, and the phase of the second radio frequency signal at the first end of the third winding is 179°. Alternatively, the phase of the first radio frequency signal at the first end of the first winding is 0°, and the phase of the second radio frequency signal at the first end of the third winding is 2°.

[0082] In at least one embodiment, referring to FIG. 1, Figure 4 As shown in FIG. 1, the first power amplifier circuit 10 includes a first power amplifier transistor 11 and a third power amplifier transistor 13, and the second power amplifier circuit 20 includes a second power amplifier transistor 12 and a fourth power amplifier transistor 14. The first power amplifier transistor 11 is connected to the first end of the first winding S11, the third power amplifier transistor 13 is connected to the second end of the first winding S11, the second power amplifier transistor 12 is connected to the first end of the third winding S13, and the fourth power amplifier transistor 14 is connected to the second end of the third winding S13.

[0083] In at least one embodiment, the first power amplifier circuit and the second power amplifier circuit are both differential power amplifier circuits. The first transformer and the second transformer are both differential-to-single-ended or single-ended-to-differential or differential-to-single-ended transformers. The first power amplifier transistor 11 is connected to the first end of the first winding S11, the third power amplifier transistor 13 is connected to the second end of the first winding S11, the second power amplifier transistor 12 is connected to the first end of the third winding S13, and the fourth power amplifier transistor 14 is connected to the second end of the third winding S13. The first transformer and the second transformer jointly convert the first radio frequency signal in the first power amplifier transistor, the third radio frequency signal in the third power amplifier transistor, the second radio frequency signal in the second power amplifier transistor, and the fourth radio frequency signal in the fourth power amplifier transistor into one radio frequency signal.

[0084] The first power amplifier transistor, the second power amplifier transistor, the second power amplifier transistor and the fourth power amplifier transistor can be BJT tubes or MOS tubes, and the embodiment does not specifically limit the types of the first power amplifier transistor, the second power amplifier transistor, the second power amplifier transistor and the fourth power amplifier transistor.

[0085] In at least one embodiment, a difference between a phase of the first radio frequency signal at the first end of the first winding and a phase of the second radio frequency signal at the first end of the third winding is in a range of [0°, 10°], and a difference between a phase of the third radio frequency signal at the second end of the first winding and a phase of the fourth radio frequency signal at the second end of the third winding is in a range of [0°, 10°].

[0086] In at least one embodiment, since the first power amplifier circuit is a differential amplifier circuit, the first power amplifier circuit includes a first power amplifier transistor and a third power amplifier transistor, and

[0087] The first radio frequency signal transmitted in the first power amplifier transistor and the third radio frequency signal transmitted in the third power amplifier transistor are two signals with opposite phases, and since the first power amplifier transistor is connected to the first end of the first winding and the third power amplifier transistor is connected to the second end of the first winding, a difference between a phase of the first radio frequency signal at the first end of the first winding and a phase of the third radio frequency signal at the second end of the first winding is in a range of [170°, 190°]. Similarly, since the second power amplifier circuit is a differential amplifier circuit, the second power amplifier circuit includes a second power amplifier transistor and a fourth power amplifier transistor, and therefore the second radio frequency signal transmitted in the second power amplifier transistor and the fourth radio frequency signal transmitted in the fourth power amplifier transistor are two signals with opposite phases, and since the second power amplifier transistor is connected to the first end of the third winding and the fourth power amplifier transistor is connected to the second end of the second winding, a difference between a phase of the second radio frequency signal at the first end of the second winding and a phase of the fourth radio frequency signal at the second end of the second winding is in a range of [170°, 190°].

[0088] In at least one embodiment, the phase of the first radio frequency signal transmitted in the first power amplifier transistor and the phase of the second radio frequency signal transmitted in the second power amplifier transistor are in the same direction, and since the first power amplifier transistor is connected to the first end of the first winding and the second power amplifier transistor is connected to the first end of the third winding, the phase of the first radio frequency signal at the first end of the first winding and the phase of the second radio frequency signal at the first end of the third winding are close to each other. In this embodiment, the difference between the phase of the first radio frequency signal at the first end of the first winding and the phase of the second radio frequency signal at the first end of the third winding is in the range of [0°, 10°]. Similarly, the phase of the third radio frequency signal transmitted in the third power amplifier transistor and the phase of the fourth radio frequency signal transmitted in the fourth power amplifier transistor are in the same direction, and since the third power amplifier transistor is connected to the second end of the first winding and the fourth power amplifier transistor is connected to the second end of the third winding, the phase of the third radio frequency signal at the second end of the first winding and the phase of the fourth radio frequency signal at the second end of the third winding are close to each other. In this embodiment, the difference between the phase of the third radio frequency signal at the second end of the first winding and the phase of the fourth radio frequency signal at the second end of the third winding is in the range of [0°, 10°].

[0089] Referring to FIG. 1, Figure 5 As shown in FIG. 1, the second winding 12 includes a first coil segment and a second coil segment connected in series, and the fourth winding 14 includes a third coil segment and a fourth coil segment connected in series. The first end of the first coil segment is connected to a signal output end, the second end of the first coil segment is connected to the first end of the second coil segment, the second end of the second coil segment is connected to the first end of the third coil segment, the second end of the third coil segment is connected to the first end of the fourth coil segment, and the second end of the fourth coil segment is grounded. The first capacitor unit 70 is connected in parallel with the first coil segment.

[0090] The first coil segment and the second coil segment can be a complete coil segment or two separate coil segments. When the first coil segment and the second coil segment are two separate coil segments, the first coil segment and the second coil segment can be directly connected or connected through other components. Similarly, the third coil segment and the fourth coil segment can be a complete coil segment or two separate coil segments. When the third coil segment and the fourth coil segment are two separate coil segments, the third coil segment and the fourth coil segment can be directly connected or connected through other components.

[0091] The first winding and the first coil segment and the second coil segment are coupled, and the third winding and the third coil segment and the fourth coil segment are coupled. By connecting the first capacitor unit in parallel with the first coil segment, the embodiment can improve the balance problem caused by the voltage difference between the first winding and the second winding being greater than the voltage difference between the third winding and the fourth winding, thereby solving the problem of excessive loss of the radio frequency power amplifier caused by poor balance, and optimizing the overall performance of the radio frequency power amplifier.

[0092] In another specific embodiment, the first capacitor unit 70 can be connected in parallel with the first coil segment and the second coil segment, or the first capacitor unit can be connected in parallel with the first coil segment, the second coil segment and the third coil segment, or the first capacitor unit 70 can be connected in parallel with the second coil segment. The balance problem caused by the voltage difference between the first winding S11 and the second winding S12 being greater than the voltage difference between the third winding S13 and the fourth winding S14 can also be improved, thereby solving the problem of excessive loss of the radio frequency power amplifier caused by poor balance, and making the overall performance of the radio frequency power amplifier more optimal.

[0093] In one specific embodiment, the first power amplifier transistor 11, the third power amplifier transistor 13, the second power amplifier transistor 12 and the fourth power amplifier transistor 14 are all BJT tubes, including a base, a collector and an emitter.

[0094] In at least one embodiment, the base of the first power amplifier transistor receives an input first radio frequency signal, the collector of the first power amplifier transistor is connected to the first end of the first winding, and the emitter of the first power amplifier transistor is grounded; the base of the third power amplifier transistor receives an input third radio frequency signal, the collector of the third power amplifier transistor is connected to the second end of the first winding, and the emitter of the third power amplifier transistor is grounded; the base of the second power amplifier transistor receives an input second radio frequency signal, the collector of the second power amplifier transistor is connected to the first end of the third winding, and the emitter of the second power amplifier transistor is grounded; the base of the fourth power amplifier transistor receives an input fourth radio frequency signal, the collector of the fourth power amplifier transistor is connected to the second end of the third winding, and the emitter of the fourth power amplifier transistor is grounded.

[0095] Alternatively, in at least one embodiment, the base of the first power amplifier transistor is connected to a first end of the first winding, the collector of the first power amplifier transistor outputs a first radio frequency signal, and the emitter of the first power amplifier transistor is grounded; the base of the third power amplifier transistor is connected to a second end of the first winding, the collector of the third power amplifier transistor outputs a third radio frequency signal, and the emitter of the third power amplifier transistor is grounded; the base of the second power amplifier transistor is connected to a first end of the third winding, the collector of the second power amplifier transistor outputs a second radio frequency signal, and the emitter of the second power amplifier transistor is grounded; the base of the fourth power amplifier transistor is connected to a second end of the third winding, the collector of the fourth power amplifier transistor outputs a fourth radio frequency signal, and the emitter of the fourth power amplifier transistor is grounded.

[0096] For reference Figure 6 and Figure 7 As shown, in at least one embodiment, the first transformer further includes a fifth winding S15, and the second transformer further includes a sixth winding S16. The fifth winding S15 and the sixth winding S16 are connected in series. The fifth winding S15 is coupled to the first winding S11 and the second winding S12. The sixth winding S16 is coupled to the third winding S13 and the fourth winding S14. The second end of the fourth winding S14 is connected to the ground terminal through the series-connected fifth winding S15 and sixth winding S16. Due to the poor balance of the RF power amplifier, the fifth winding S15 and the sixth winding S16 are connected in this embodiment, and the fifth winding S15... The first winding S11 is coupled to the second winding S12, the sixth winding S16 is coupled to the third winding S13 and the fourth winding S14. Since the fifth winding S15 and the sixth winding are connected near the ground end, and the second winding S12 and the fourth winding S14 are connected near the signal output end, by coupling the first winding S11 to the fifth winding S15 near the ground end and the second winding S12 near the signal output end, and coupling the third winding S13 to the sixth winding S16 near the ground end and the fourth winding S14 near the signal output end, and by making the first capacitor unit and the second winding in parallel, the balance of the RF power amplifier is further improved.

[0097] In one specific embodiment, reference is made to the following Figure 7 As shown, the second end of the fourth winding S14 is connected to the second end of the sixth winding S16, the first end of the sixth winding S16 is connected to the second end of the fifth winding S15, and the first end of the fifth winding S15 is grounded. Alternatively, refer to the following... Figure 6As shown, the second end of the fourth winding S14 is connected with the first end of the fifth winding S15, the second end of the fifth winding S15 is connected with the first end of the sixth winding S16, and the second end of the sixth winding S16 is grounded.

[0098] Referring to Fig. 1 Figure 6 As shown, the second end of the fourth winding S14 is connected with the second end of the sixth winding S16, the first end of the sixth winding S16 is connected with the second end of the fifth winding S15, and the first end of the fifth winding S15 is grounded. In the embodiment, the sixth winding S16 is connected with the ground, and the fifth winding S15 is connected with the fourth winding S14. Therefore, in the embodiment, the fifth winding S15 and the sixth winding S16 are connected close to the ground, and the second winding S12 and the fourth winding S14 are connected close to the signal output end. By coupling the first winding S11 with the fifth winding S15 close to the ground and the second winding S12 close to the signal output end, and coupling the third winding S13 with the sixth winding S16 close to the ground and the fourth winding S14 close to the signal output end, the impedance / phase imbalance between the first power amplification circuit 10 and the second power amplification circuit 20 can be improved, and the overall loss of the radio frequency power amplifier can be reduced.

[0099] Referring to Fig. 1 Figure 7 As shown, the second end of the fourth winding S14 is connected with the first end of the fifth winding S15, the second end of the fifth winding S15 is connected with the first end of the sixth winding S16, and the second end of the sixth winding S16 is grounded. In the embodiment, the sixth winding S16 is connected with the ground, and the fifth winding S15 is connected with the fourth winding S14. Therefore, in the embodiment, the fifth winding S15 and the sixth winding S16 are connected close to the ground, and the second winding S12 and the fourth winding S14 are connected close to the signal output end. By coupling the first winding S11 with the fifth winding S15 close to the ground and the second winding S12 close to the signal output end, and coupling the third winding S13 with the sixth winding S16 close to the ground and the fourth winding S14 close to the signal output end, the impedance / phase imbalance between the first power amplification circuit 10 and the second power amplification circuit 20 can be improved, and the overall loss of the radio frequency power amplifier can be reduced.

[0100] The application also provides a radio frequency front-end module, referring to Fig. 1 Figure 8As shown, including a substrate 300, and a first chip 100 and a second chip 200 disposed on the substrate 300, the first chip 100 includes a first power amplifier circuit and a second power amplifier circuit, the second chip 200 includes a first transformer, a second transformer and a first capacitor unit, the first transformer includes a first winding and a second winding, the second transformer includes a third winding and a fourth winding, the first power amplifier circuit is connected with a first pad of the first chip, the first pad is connected to a second pad of the second chip, the second pad is connected with the first winding, the second power amplifier circuit is connected with a third pad of the first chip, the third pad is connected to a fourth pad of the second chip, and the fourth pad is connected with the third winding; a first end of the second winding is connected to a signal output end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding.

[0101] In at least one embodiment, when the first pad is connected to the second pad of the second chip, it can be connected by one or more jumpers, or can be connected by wire bonding. Similarly, when the third pad is connected to the fourth pad of the second chip, it can be connected by one or more jumpers, or can be connected by wire bonding.

[0102] In at least one embodiment, by integrating the first power amplifier circuit and the second power amplifier circuit in the first chip 100, and integrating the first transformer, the second transformer and the first capacitor unit in the second chip 200, the balance of the radio frequency front-end module can be improved while the integration of the radio frequency front-end module is improved.

[0103] In at least one embodiment, the first chip can be a CMOS chip, an HBT chip, etc., and the second chip can be an IPD chip or an SOI chip, etc., and the type of the first chip and the second chip is not specifically limited in the embodiment.

[0104] In at least one embodiment, the first chip is a heterojunction bipolar transistor chip (HBT chip), that is, the type of the transistor included in the first power amplifier circuit and the second power amplifier circuit is an HBT transistor, and the second chip is an integrated product development chip (IPD chip), so that the balance and integration of the radio frequency front-end module can be improved while the overall performance of the radio frequency front-end module is ensured.

[0105] The embodiment also provides a radio frequency front-end module, which will be described below Figure 9As shown, including a substrate 300, and a first chip 100, a first transformer 50, a second transformer 60 and a first capacitor unit 70 disposed on the substrate 300, the first chip includes a first power amplifier circuit and a second power amplifier circuit, the first transformer includes a first winding and a second winding, the second transformer includes a third winding and a fourth winding, the first power amplifier circuit is connected with a first pad of the first chip, the first pad is connected to a second pad of the substrate, the second pad is connected with the first winding, the second power amplifier circuit is connected with a third pad of the first chip, the third pad is connected to a fourth pad of the substrate, and the fourth pad is connected with the third winding; a first end of the second winding is connected to a signal output end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding.

[0106] In at least one embodiment, when the first pad is connected to the second pad of the substrate, it can be connected through one or more jumpers, or can be connected in the form of wire bonding. Similarly, when the third pad is connected to the fourth pad of the substrate, it can be connected through one or more jumpers, or can be connected in the form of wire bonding.

[0107] In at least one embodiment, by integrating the first power amplifier circuit and the second power amplifier circuit in the first chip 10, and disposing the first transformer, the second transformer and the first capacitor unit on the substrate, the balance of the radio frequency front end module can be improved while the quality factor (Q value) of the radio frequency front end module is improved, and since the first capacitor unit is disposed on the substrate, the capacitance value of the first capacitor unit can be set larger, and the adjustment range of the capacitance value of the first capacitor unit is wider.

[0108] In a specific embodiment, the first capacitor unit is a surface mount device (SMD) capacitor unit, so that the integration of the radio frequency front end module can be improved, and the layout of each component in the radio frequency front end module is facilitated.

[0109] The above-described embodiments are only used to illustrate the technical solutions of the present application, but not limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A radio frequency power amplifier, characterized by, The first power amplifier circuit, the second power amplifier circuit and the voltage synthesis network, the voltage synthesis network comprising a first transformer, a second transformer and a first capacitor unit, the first transformer comprising a first winding and a second winding, the second transformer comprising a third winding and a fourth winding; the first power amplifier circuit is connected with the first winding, the second power amplifier circuit is connected with the third winding, a first end of the second winding is connected to a signal transmission end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding; the capacitance value of the first capacitor unit ranges from (0, 20pF), and the first capacitor unit is configured to compensate for the capacitance value of the equivalent parasitic capacitance of the second transformer equivalently transformed at the first end of the fourth winding. The output end of the first power amplifier circuit is connected with the first winding, the output end of the second power amplifier circuit is connected with the third winding, and the first capacitor unit is configured to balance the impedance between the output end of the first power amplifier circuit and the output end of the second power amplifier circuit.

2. The radio frequency power amplifier of claim 1, wherein, Alternatively, the input end of the first power amplifier circuit is connected with the first winding, the input end of the second power amplifier circuit is connected with the third winding, and the first capacitor unit is configured to balance the impedance between the input end of the first power amplifier circuit and the input end of the second power amplifier circuit. The output end of the first power amplifier circuit is connected with the first winding, the output end of the second power amplifier circuit is connected with the third winding, and the first capacitor unit is configured to make the output impedance of the first power amplifier circuit and the output impedance of the second power amplifier circuit the same.

3. The radio frequency power amplifier of claim 1, wherein, Alternatively, the input end of the first power amplifier circuit is connected with the first winding, the input end of the second power amplifier circuit is connected with the third winding, and the first capacitor unit is configured to make the input impedance of the first power amplifier circuit and the input impedance of the second power amplifier circuit the same. The capacitance value of the first capacitor unit ranges from (0*CP2, 2*CP2), wherein CP2 is the capacitance value of the equivalent parasitic capacitance of the second transformer equivalently transformed at the first end of the fourth winding.

4. The radio frequency power amplifier of claim 1, wherein, The first power amplifier circuit comprises a first power amplifier transistor, the second power amplifier circuit comprises a second power amplifier transistor, the first power amplifier transistor is connected to a first end of the first winding, a second end of the first winding is connected to a ground end or a power supply end, the second power amplifier transistor is connected to a first end of the third winding, and a second end of the third winding is connected to a ground end or a power supply end.

5. The radio frequency power amplifier of claim 1, wherein, The difference between the phase of the first radio frequency signal at the first end of the first winding and the phase of the second radio frequency signal at the first end of the third winding ranges from [0°, 10°].

6. The radio frequency power amplifier of claim 5, wherein, ​ 7. The radio frequency power amplifier of claim 1, wherein, The first power amplifier circuit comprises a first power amplifier transistor and a third power amplifier transistor, the second power amplifier circuit comprises a second power amplifier transistor and a fourth power amplifier transistor, the first power amplifier transistor is connected to the first end of the first winding, the third power amplifier transistor is connected to the second end of the first winding, the second power amplifier transistor is connected to the first end of the third winding, and the fourth power amplifier transistor is connected to the second end of the third winding.

8. The radio frequency power amplifier of claim 7, wherein, The difference between the phase of the first radio frequency signal at the first end of the first winding and the phase of the second radio frequency signal at the first end of the third winding ranges from 0° to 10°, and the difference between the phase of the third radio frequency signal at the second end of the first winding and the phase of the fourth radio frequency signal at the second end of the third winding ranges from 0° to 10°.

9. The radio frequency power amplifier of claim 1, wherein, The second winding comprises a first coil segment and a second coil segment connected in series, the fourth winding comprises a third coil segment and a fourth coil segment connected in series, the first end of the first coil segment is connected to a signal output end, the second end of the first coil segment is connected to the first end of the second coil segment, the second end of the second coil segment is connected to the first end of the third coil segment, the second end of the third coil segment is connected to the first end of the fourth coil segment, and the second end of the fourth coil segment is grounded; wherein the first capacitor unit is connected in parallel with the first coil segment.

10. The radio frequency power amplifier of claim 7, wherein, The first power amplifier transistor, the third power amplifier transistor, the second power amplifier transistor and the fourth power amplifier transistor are BJT tubes, each comprising a base, a collector and an emitter. The base of the first power amplifier transistor receives an input first radio frequency signal, the collector of the first power amplifier transistor is connected to the first end of the first winding, and the emitter of the first power amplifier transistor is grounded; the base of the third power amplifier transistor receives an input third radio frequency signal, the collector of the third power amplifier transistor is connected to the second end of the first winding, and the emitter of the third power amplifier transistor is grounded; the base of the second power amplifier transistor receives an input second radio frequency signal, the collector of the second power amplifier transistor is connected to the first end of the third winding, and the emitter of the second power amplifier transistor is grounded; the base of the fourth power amplifier transistor receives an input fourth radio frequency signal, the collector of the fourth power amplifier transistor is connected to the second end of the third winding, and the emitter of the fourth power amplifier transistor is grounded. Alternatively, the base of the first power amplifier transistor is connected to the first end of the first winding, the collector of the first power amplifier transistor outputs a first radio frequency signal, and the emitter of the first power amplifier transistor is grounded; the base of the third power amplifier transistor is connected to the second end of the first winding, the collector of the third power amplifier transistor outputs a third radio frequency signal, and the emitter of the third power amplifier transistor is grounded; the base of the second power amplifier transistor is connected to the first end of the third winding, the collector of the second power amplifier transistor outputs a second radio frequency signal, and the emitter of the second power amplifier transistor is grounded; and the base of the fourth power amplifier transistor is connected to the second end of the third winding, the collector of the fourth power amplifier transistor outputs a fourth radio frequency signal, and the emitter of the fourth power amplifier transistor is grounded.

11. The radio frequency power amplifier of claim 1, wherein, The first transformer further comprises a fifth winding, and the second transformer further comprises a sixth winding, the fifth winding and the sixth winding are connected in series, the fifth winding is coupled with the first winding and the second winding, the sixth winding is coupled with the third winding and the fourth winding, and the second end of the fourth winding is connected to a ground end through the fifth winding and the sixth winding connected in series.

12. The radio frequency power amplifier of claim 11, wherein, The second end of the fourth winding is connected to the second end of the sixth winding, the first end of the sixth winding is connected to the second end of the fifth winding, and the first end of the fifth winding is grounded, or the second end of the fourth winding is connected to the first end of the fifth winding, the second end of the fifth winding is connected to the first end of the sixth winding, and the second end of the sixth winding is grounded.

13. A radio frequency front end module, comprising: The radio frequency front end module comprises a substrate, and a first chip and a second chip disposed on the substrate, the first chip comprises a first power amplifier circuit and a second power amplifier circuit, the second chip comprises a first transformer, a second transformer and a first capacitor unit, the first transformer comprises a first winding and a second winding, the second transformer comprises a third winding and a fourth winding, the first power amplifier circuit is connected to a first pad of the first chip, the first pad is connected to a second pad of the second chip, the second pad is connected to the first winding, the second power amplifier circuit is connected to a third pad of the first chip, the third pad is connected to a fourth pad of the second chip, and the fourth pad is connected to the third winding; a first end of the second winding is connected to a signal output end, a second end of the second winding is connected to a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of a coil of the second winding; a capacitance value of the first capacitor unit ranges from 0 to 20 pF, and the first capacitor unit is configured to compensate for an equivalent parasitic capacitance value of an equivalent transformation of the second transformer at the first end of the fourth winding.

14. The radio frequency front end module of claim 13, wherein the first and second switches are configured to be controlled by a single control signal. 15 The first chip is a heterojunction bipolar transistor chip, and the second chip is an integrated product development chip.

15. A radio frequency front end module, comprising: The radio frequency front end module comprises a substrate, and a first chip, a first transformer, a second transformer and a first capacitor unit arranged on the substrate, the first chip comprises a first power amplifier circuit and a second power amplifier circuit, the first transformer comprises a first winding and a second winding, the second transformer comprises a third winding and a fourth winding, the first power amplifier circuit is connected with a first pad of the first chip, the first pad is connected to a second pad of the substrate, the second pad is connected with the first winding, the second power amplifier circuit is connected with a third pad of the first chip, the third pad is connected to a fourth pad of the substrate, and the fourth pad is connected with the third winding; a first end of the second winding is connected to a signal output end, a second end of the second winding is connected with a first end of the fourth winding, and a second end of the fourth winding is connected to a ground end; wherein the first capacitor unit is connected in parallel with at least part of the coils of the second winding; the capacitance value of the first capacitor unit ranges from (0, 20pF), and the first capacitor unit is configured to compensate for the capacitance value of the equivalent parasitic capacitance of the second transformer equivalent to the first end of the fourth winding.

16. The radio frequency front end module of claim 15, wherein the first and second switches are configured to be controlled by a single control signal. The first capacitor unit is a patch capacitor unit.

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