Solar cell, preparation method thereof and power utilization device

Abstract

The invention provides a solar cell and a preparation method thereof, and a power utilization device, the solar cell comprises a transmission layer, a perovskite layer and a passivation layer, the passivation layer is located between the transmission layer and the perovskite layer, the passivation layer is a triazine derivative, in the application, at least a part of functional groups of the triazine derivative are coordinated with the transmission layer, and at the same time, at least a part of functional groups of the triazine derivative are coordinated with the transmission layer. At least the other part of functional groups of the triazine derivative are coordinated with iodine and lead atoms in the perovskite layer, so that the defects between the transport layer and the perovskite layer are reduced, and the redox reaction among metal cations, iodide ions and hydrogen ions between the transport layer and the perovskite layer can be further weakened, and therefore, the photoelectric conversion efficiency is improved. And the stability of the solar cell is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, and an electrical device. Background Art

[0002] Perovskite solar cells refer to cells that use perovskite materials as light-absorbing layer materials. Perovskite solar cells have received extensive attention and developed rapidly due to their significant performance advantages such as high light absorption coefficient, carrier mobility, and direct and adjustable optical band gap. However, in existing perovskite solar cells, there are many interface defects between the perovskite layer and the transport layer, resulting in poor stability of the solar cells.

[0003] Therefore, how to propose a solar cell with high stability is an urgent problem to be solved. Summary of the invention

[0004] In view of the above problems, the present application provides a solar cell with high stability, a preparation method thereof, and an electrical device.

[0005] In a first aspect, the present application provides a solar cell, comprising: a transmission layer, a perovskite layer and a passivation layer, wherein the passivation layer is located between the transmission layer and the perovskite layer, wherein the passivation layer is a triazine derivative.

[0006] In the technical solution of the embodiment of the present application, by using triazine derivatives as a passivation layer, the passivation layer is located between the transport layer and the perovskite layer, at least a part of the functional groups of the triazine derivatives are coordinated with the transport layer, and at the same time, at least another part of the functional groups of the triazine derivatives are coordinated with the iodine and lead atoms in the perovskite layer, thereby reducing the defects between the transport layer and the perovskite layer, and further weakening the redox reaction between the metal cations, iodine ions, and hydrogen ions between the transport layer and the perovskite layer, thereby increasing the stability of the solar cell.

[0007] In some embodiments, the transport layer includes a hole transport layer, and the passivation layer is located between the hole transport layer and the perovskite layer; or

[0008] The transport layer includes an electron transport layer, and the passivation layer is located between the electron transport layer and the perovskite layer.

[0009] In the technical solution of the embodiment of the present application, the passivation layer formed by the triazine derivative can be located between the hole transport layer and the perovskite layer or between the electron transport layer and the perovskite layer, reducing the defects between the hole transport layer and the perovskite layer or between the electron transport layer and the perovskite layer and weakening the redox reaction, thereby increasing the stability of the solar cell.

[0010] In some embodiments, the transport layer includes a hole transport layer and an electron transport layer, and the solar cell has two passivation layers, wherein one passivation layer is located between the hole transport layer and the perovskite layer, and the other passivation layer is located between the electron transport layer and the perovskite layer.

[0011] In the technical solution of the embodiment of the present application, a passivation layer is arranged between the hole transport layer and the perovskite layer and between the electron transport layer and the perovskite layer, which reduces the defects between the hole transport layer and the perovskite layer and between the electron transport layer and the perovskite layer and weakens the redox reaction, thereby increasing the stability of the solar cell.

[0012] In some embodiments, the triazine derivative is Wherein, X, Y, and Z include at least one of F, Cl, Br, OH, COOH, NH2, NHCl, and NHBr; j is greater than or equal to 0, n is greater than or equal to 0, and m is greater than or equal to 0.

[0013] In the technical solution of the embodiment of the present application, the triazine derivative is within the above-mentioned range, so that at least a part of the functional groups of the triazine derivative are coordinated with the transport layer, and at the same time, at least another part of the functional groups of the triazine derivative are coordinated with the iodine and lead atoms in the perovskite layer, forming a better passivation effect between the transport layer and the perovskite layer, thereby increasing the stability of the solar cell.

[0014] In some embodiments, the thickness of the passivation layer is 1-5 nm.

[0015] In the technical solution of the embodiment of the present application, the thickness of the passivation layer is 1-5 nm, which can take into account both better passivation effect and higher photoelectric conversion efficiency.

[0016] In some embodiments, the perovskite layer is R a FA b MA c PbI3, element R is Cs, a+b+c=1, a is 0-0.05, b is 0.8-0.95, and c is 0-0.15.

[0017] In the technical solution of the embodiment of the present application, when the perovskite layer is made of the above-mentioned material, the perovskite solar cell has good photoelectric conversion efficiency.

[0018] In some embodiments, the perovskite layer has a thickness of 400-500 nm.

[0019] In the technical solution of the embodiment of the present application, when the thickness of the perovskite layer is within the above range, the perovskite solar cell has good photoelectric conversion efficiency.

[0020] In some embodiments, the material of the electron transport layer includes PCBM and / or C60, and the material of the hole transport layer includes poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine] (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine], PTAA), 3,4-ethylenedioxythiophene monomer: polystyrenesulfonate (Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate, PEDOT:PSS), triphenylamine, phosphocarbazole and NiO x At least one of the above, and the range of x is 1.5-2.5.

[0021] In the technical solution of the embodiment of the present application, when the material of the electron transport layer and the material of the hole transport layer include the above materials, the electrons and holes in the film layer of the solar cell have a higher transmission efficiency, thereby improving the photoelectric conversion efficiency of the solar cell.

[0022] In some embodiments, the electron transport layer further has a hole blocking layer on the side facing away from the perovskite layer, and the hole blocking layer includes BCP and / or SnO2.

[0023] In the technical solution of the embodiment of the present application, a hole blocking layer is provided on the side of the electron transport layer facing away from the perovskite layer, so that electrons can be transmitted and holes can be blocked, so that the electrons and holes in the film layer of the solar cell have a higher transmission efficiency, thereby improving the photoelectric conversion efficiency of the solar cell.

[0024] In a second aspect, the present application also proposes a method for preparing a solar cell, comprising:

[0025] Set the transport layer;

[0026] Providing a perovskite layer;

[0027] A passivation layer is provided, wherein the passivation layer is located between the transmission layer and the perovskite layer, and the passivation layer is a triazine derivative.

[0028] In the technical solution of the embodiment of the present application, by using triazine derivatives as a passivation layer, the passivation layer is located between the transport layer and the perovskite layer, at least a part of the functional groups of the triazine derivatives are coordinated with the transport layer, and at the same time, at least another part of the functional groups of the triazine derivatives are coordinated with the iodine and lead atoms in the perovskite layer, thereby reducing the defects between the transport layer and the perovskite layer, and further weakening the redox reaction between the metal cations, iodine ions, and hydrogen ions between the transport layer and the perovskite layer, thereby increasing the stability of the solar cell.

[0029] In some embodiments, in the step of providing the passivation layer, a passivation precursor is used to form the passivation layer, the passivation precursor includes a triazine derivative and a solvent, and the concentration of the triazine derivative is 0.1-3 mg / mL.

[0030] In the technical solution of the embodiment of the present application, by adopting a passivation precursor, wherein the concentration of the triazine derivative is 0.1-3 mg / mL, the formed passivation layer has both better passivation effect and higher photoelectric conversion efficiency.

[0031] In some embodiments, the passivation precursor is annealed to form a passivation layer at a temperature of 80-120°C.

[0032] In the technical solution of the embodiment of the present application, a passivation layer is formed by annealing a passivation precursor. At the same time, the annealing temperature is within the above-mentioned range, which can take into account the volatilization rate of the solvent and the stability of the triazine derivative, so that the formed passivation layer has good film performance and high stability, thereby increasing the stability of the solar cell.

[0033] In some embodiments, the solvent includes at least one of isopropanol, methanol, and ethanol.

[0034] In the technical solution of the embodiment of the present application, by adopting the above solvents, the solubility of the triazine derivative and the volatility of the solvent can be taken into account, thus facilitating the formation of a passivation layer with good performance, thereby increasing the stability of the solar cell.

[0035] In some embodiments, in the step of providing the perovskite layer, the perovskite layer is formed by coating a perovskite precursor and annealing, wherein the concentration of lead ions in the perovskite precursor is 1-2 mol / L.

[0036] In the technical solution of the embodiment of the present application, the concentration of the perovskite precursor is calibrated with the concentration of lead ions in the perovskite precursor. When the concentration of lead ions is within the above range, the perovskite has good photoelectric conversion efficiency.

[0037] In a third aspect, the present application further provides an electrical device, comprising the solar cell as described above or a solar cell prepared by the method for preparing a solar cell as described above.

[0038] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0040] Figure 2 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0041] Figure 3 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0042] Figure 4 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0043] Figure 5 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0044] Figure 6 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0045] Figure 7 A schematic diagram of the structure of a solar cell according to some embodiments of the present application;

[0046] Figure 8 This is a schematic diagram of the structure of an electrical device according to some embodiments of the present application.

[0047] In the drawings, the drawings are not drawn to scale.

[0048] Description of the markings: solar cell 100 , transport layer 10 , passivation layer 20 , perovskite layer 30 , substrate 40 , positive electrode film layer 50 , hole transport layer 11 , electron transport layer 12 , negative electrode film layer 60 , hole blocking layer 70 , electrical device 1000 . DETAILED DESCRIPTION

[0049] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0051] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features.

[0052] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0053] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0054] At present, from the perspective of market development, the application of perovskite solar cells is becoming more and more extensive. Perovskite solar cells can be used in lunar rovers, satellite sails, various sensors, detectors, as well as in wearable electronic products, automobile power supply and other civilian products. Perovskite solar cells have become a power source for consumer products in many aspects. With the continuous expansion of the application field of perovskite solar cells and the flexible foldability of perovskite solar cells, the market demand is also constantly expanding.

[0055] In the existing methods for preparing perovskite film layers and in the existing perovskite solar cells, there are many interface defects between the perovskite layer and the transport layer, resulting in poor stability of the solar cell and the electrical device.

[0056] In order to solve the above technical problems, the present application relates to a solar cell, comprising a transmission layer, a perovskite layer and a passivation layer, wherein the passivation layer is located between the transmission layer and the perovskite layer, wherein the passivation layer is a triazine derivative.

[0057] By using triazine derivatives as the passivation layer, the passivation layer is located between the transport layer and the perovskite layer, at least a portion of the functional groups of the triazine derivatives are coordinated with the transport layer, and at the same time, at least another portion of the functional groups of the triazine derivatives are coordinated with the iodine and lead atoms in the perovskite layer, thereby reducing the defects between the transport layer and the perovskite layer, and further weakening the redox reaction between the metal cations, iodine ions, and hydrogen ions between the transport layer and the perovskite layer, thereby increasing the stability of the solar cell.

[0058] The solar cell disclosed in the embodiment of the present application can be used in an electrical device that uses photoelectric conversion. The electrical device can be, but is not limited to, a mobile phone, a tablet, a laptop, an electric toy, an electric tool, a battery car, an electric car, a ship, a spacecraft, and the like. Among them, the electric toy can include a fixed or mobile electric toy, for example, a game console, an electric car toy, an electric ship toy, and an electric airplane toy, and the like, and the spacecraft can include an airplane, a rocket, a space shuttle, and a spacecraft, and the like.

[0059] See also Figure 1 According to some embodiments of the present application, the present application provides a solar cell 100, including:

[0060] Transport layer 10;

[0061] a perovskite layer 30; and

[0062] The passivation layer 20 is located between the transmission layer 10 and the perovskite layer 30 , and the passivation layer 20 is a triazine derivative.

[0063] The transport layer 10 may be a hole transport layer 11 and / or an electron transport layer 12. The hole transport layer 11 has the function of transporting holes and blocking electrons, and the electron transport layer 12 has the function of transporting electrons and blocking electron-hole recombination. The hole transport layer 11 and the electron transport layer 12 enable the solar cell to have a higher efficiency.

[0064] When sunlight shines on the perovskite layer 30, when the energy of the sunlight photons is greater than the band gap, the perovskite layer 30 absorbs photons to generate "electron-hole pairs", and the electron transport layer 12 transfers the separated electrons to the negative electrode; the hole transport layer 11 transfers the holes separated from the electrons to the positive electrode, further forming a directional movement of charges in the external circuit, thereby generating current and realizing the conversion of light energy into electrical energy.

[0065] The passivation layer 20 may be located between the electron transport layer 12 and the perovskite layer 30, or between the hole transport layer 11 and the perovskite layer 30, or between the electron transport layer 12 and the perovskite layer 30 and between the hole transport layer 11 and the perovskite layer 30. The solar cell 100 of any embodiment of the present application may be applied to a regular solar cell 100 or to an inverted solar cell 100.

[0066] In the technical solution of the embodiment of the present application, by using triazine derivatives as the passivation layer 20, the passivation layer 20 is located between the transmission layer 10 and the perovskite layer 30, at least a part of the functional groups of the triazine derivatives are coordinated with the transmission layer 10, and at the same time, at least another part of the functional groups of the triazine derivatives are coordinated with the iodine and lead atoms in the perovskite layer 30, thereby reducing the defects between the transmission layer 10 and the perovskite layer 30, and further weakening the redox reaction between the metal cations, iodine ions, and hydrogen ions between the transmission layer 10 and the perovskite layer 30, thereby increasing the stability of the solar cell 100.

[0067] Specifically, taking the hole transport layer 11 as nickel oxide as an example, the halogen groups, hydroxyl groups, amino groups and other functional groups in the triazine derivative react with the Ni oxide in the hole transport layer 11. 3+ At the same time, the triazine derivatives can coordinate with the iodine atoms and lead atoms in the perovskite to reduce the defects between the hole transport layer 11 and the perovskite layer 30; between the hole transport layer 11 and the perovskite layer 30, the triazine derivatives can weaken the Ni 3+ ,I - and H + Oxidation-reduction reaction occurs to generate Ni 2+ , therefore, the stability of the solar cell 100 is increased.

[0068] In some embodiments, the transport layer 10 includes a hole transport layer 11 , and the passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30 .

[0069] Optionally, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11 , and the passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30 .

[0070] The transport layer 10 includes an electron transport layer 12 , and the passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30 .

[0071] Optionally, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11 , and the passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30 .

[0072] See also Figure 2 In the technical solution of the embodiment of the present application, the transport layer 10 includes a hole transport layer 11, and the passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0073] See also Figure 3 In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11, and the passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the electron transport layer 12, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, the electron transport layer 12, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0074] See also Figure 4 In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12, and the passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the electron transport layer 12, the passivation layer 20, the perovskite layer 30 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the perovskite layer 30, the passivation layer 20, the electron transport layer 12, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0075] See also Figure 5 In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11, and the passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0076] In the technical solution of the embodiment of the present application, the passivation layer 20 formed by the triazine derivative can be located between the hole transport layer 11 and the perovskite layer 30 or between the electron transport layer 12 and the perovskite layer 30, thereby reducing defects between the hole transport layer 11 and the perovskite layer 30 or between the electron transport layer 12 and the perovskite layer 30 and weakening the redox reaction, thereby increasing the stability of the solar cell.

[0077] In some embodiments, the transport layer 10 includes a hole transport layer 11 and an electron transport layer 12, and the solar cell 100 has two passivation layers 20, wherein one passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30, and the other passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30.

[0078] See also Figure 6In the technical solution of the embodiment of the present application, the transport layer 10 includes a hole transport layer 11 and an electron transport layer 12, and the solar cell 100 has two passivation layers 20, wherein one passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30, and the other passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the electron transport layer 12, the passivation layer 20, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, the passivation layer 20, the electron transport layer 12, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0079] The substrate 40 includes, but is not limited to, at least one of a polyethylene terephthalate (PET) substrate, a textured silicon substrate, or a glass substrate.

[0080] There are many types of substrates 40, which can be suitable for devices with different requirements, and the costs of PET substrates, textured silicon substrates, and glass substrates are relatively low.

[0081] The negative electrode film layer 60 and the positive electrode film layer 50 are both conductive layers. The material of the conductive layer is preferably, but not limited to, a material with high conductivity and high visible light transmittance. As an example, the material of the conductive layer includes, but is not limited to, fluorine-doped tin oxide (F-dopedtin oxide, FTO), indium tin oxide (Indium tin oxides, ITO), aluminum zinc oxide (Aluminum zinc oxide, AZO), boron zinc oxide (Boron zinc oxide, BZO) or indium zinc oxide (Indium zinc oxide, IZO), aluminum (Al), copper (Cu), gold (Au), graphite, etc.

[0082] In the technical solution of the embodiment of the present application, the passivation layer 20 formed by the triazine derivative can be located between the electron transport layer 12 and the perovskite layer 30 and / or between the hole transport layer 11 and the perovskite layer 30, reducing the defects between the perovskite layer 30 and the transport layer 10 and weakening the redox reaction, thereby increasing the stability of the solar cell 100.

[0083] In some embodiments, the triazine derivative is Wherein, X, Y, and Z include at least one of F, Cl, Br, OH, COOH, NH2, NHCl, and NHBr; j is greater than or equal to 0, n is greater than or equal to 0, and m is greater than or equal to 0.

[0084] In the technical solution of the embodiment of the present application, the triazine derivative can be

[0085] wait.

[0086] It should be noted that triazine derivatives can be purchased from the market or synthesized according to production needs.

[0087] In some embodiments, the thickness of the passivation layer 20 is 1-5 nm.

[0088] In the technical solution of the embodiment of the present application, the thickness of the passivation layer 20 can be 1nm, 1.055nm, 1.1nm, 1.16nm, 1.175nm, 1.9nm, 2nm, 2.2nm, 2.35nm, 2.46nm, 2.5nm, 2.63nm, 2.7nm, 2.85nm, 2.9nm, 3nm, 3.1nm, 3.2nm, 3.4nm, 3.45nm, 3.5nm, 3.52nm, 3.585nm, 3.6nm, 3.7nm, 3.95nm, 4nm, 4.13nm, 4.2nm, 4.85nm, 4.9nm, 5nm, 5.10nm, 5.11nm, 5.12nm, 5.13nm, 5.14nm, 5.15nm, 5.16nm, 5.17nm, 5.18nm, 5.19nm, 5.20nm, 5.21nm, 5.22nm, 5.23nm, 5.24nm, 5.25nm, 5.26nm, 5.27nm, 5.28nm, 5.29nm, 5.30nm, 5.31nm, 5.32nm, 5.33nm, 5.34nm, 5.35nm, 5.36nm, 5.37nm, 5.38nm, 5.39nm, 5.40nm, 5.41nm, 5.41nm, 5.41nm, 5.41nm, 5.41nm, 5.41nm, 5.41nm, .25nm, 4.32nm, 4.4nm, 4.5nm, 4.615nm, 4.7nm, 4.79nm, 4.8nm, 4.9nm, 4.95nm, 5nm, etc., or a range consisting of any two of the above values, for example, it can be 1-1.175nm, 2-2.5nm, 2.7-3nm, 3.1-3.45nm, 3.5-3.7nm, 3.95-4.2nm, 4.25-4.5nm, 4.5nm-4.8nm, 4.9-5nm, etc., according to actual needs, as long as it is in the range of 1-5nm.

[0089] In the technical solution of the embodiment of the present application, the thickness of the passivation layer 20 is 1-5 nm, which can take into account both better passivation effect and higher photoelectric conversion efficiency.

[0090] In addition, if the thickness of the passivation layer 20 is less than 1 nm, it is difficult to achieve a thickness below 1 nm due to the molecular volume of the triazine derivatives themselves. At the same time, the thickness of the passivation layer 20 is too small and the passivation effect is not obvious; if the thickness of the passivation layer 20 is greater than 5 nm, the triazine derivatives will hinder the transmission of charges and affect the photoelectric conversion efficiency of the solar cell 100. Therefore, when the thickness of the passivation layer 20 is within the above range, both better passivation and higher photoelectric conversion efficiency can be taken into account.

[0091] In the present application, the perovskite layer 30 is R a FA b MA cPbI3, wherein the element R is Cs, a+b+c=1, a is 0-0.05, b is 0.8-0.95, and c is 0-0.15. Specifically, the perovskite layer 30 may be FA 0.9 Pb 0.1 I3, FA 0.95 MA 0.05 PbI3、Cs 0.01 FA 0.89 MA 0.1 PbI3、Cs 0.01 FA 0.91 MA 0.08 PbI3、Cs 0.02 FA 0.93 MA 0.05 PbI3、Cs 0.05 FA 0.95 PbI3、Cs 0.03 FA 0.88 MA 0.09 PbI3, etc.

[0092] In the technical solution of the embodiment of the present application, when the perovskite layer 30 is made of the above-mentioned material, the perovskite solar cell has good photoelectric conversion efficiency.

[0093] In some embodiments, the thickness of the perovskite layer 30 is 400-500 nm.

[0094] In the technical solution of the embodiment of the present application, the thickness of the perovskite layer 30 can be 400nm, 410nm, 415nm, 420nm, 430nm, 437nm, 440nm, 442nm, 448nm, 450nm, 455nm, 460nm, 463nm, 470nm, 480nm, 488nm, 490nm, 495nm, 498nm, 500nm, etc., or a range composed of any two of the above values, for example, it can be 400-420nm, 430nm-450nm, 450-463nm, 470-480nm, 480-495nm, 498nm-500nm, etc., according to actual needs, as long as it is in the range of 400-500nm.

[0095] In the technical solution of the embodiment of the present application, when the thickness of the perovskite layer 30 is within the above range, the perovskite solar cell has good photoelectric conversion efficiency.

[0096] In addition, if the thickness of the perovskite layer 30 is large, the electron and hole transmission paths increase, resulting in low photoelectric conversion efficiency; if the thickness of the perovskite layer 30 is small, the number of electrons and holes is small, resulting in low photoelectric conversion efficiency. Therefore, when the thickness of the perovskite layer 30 is within the above range, the perovskite solar cell has good photoelectric conversion efficiency.

[0097] In some embodiments, the material of the electron transport layer 12 includes PCBM and / or C60, and the material of the hole transport layer 11 includes poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine] (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine], PTAA), 3,4-ethylenedioxythiophene monomer: polystyrenesulfonate (Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate, PEDOT:PSS), triphenylamine, phosphocarbazole and NiO x At least one of the above, and the range of x is 1.5-2.5.

[0098] The triphenylamines may be N4,N4′-di(naphthalen-1-yl)-N4,N4′-bis(4-vinylphenyl)biphenyl-4,4′-diamine (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(4-vinyl-phenyl)benzidine, VNPB), PTAA or N,N-diphenyl-4-(pyridin-4-yl)aniline (N,N-diphenyl-4-(pyridin-4-yl)aniline, (p-PY)), etc.

[0099] The phosphocarbazoles may be (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (Phosphonic acid, (2-carbazol-9-ylethyl)-(8CI), 2PACz), 2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl)phosphonic acid (2-(3,6-Dimethyl-9H-carbazol-9-yl)ethyl)phosphonic acid, Me-2PACz), or (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (P-[2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]-Phosphonic acid, MeO-2PACz), etc.

[0100] PCBM and C60 have good electron transport properties, PTAA, PEDOT:PSS, triphenylamine, phosphate carbazole, NiO xIt has good hole transport properties, and PCBM, C60, PTAA, PEDOT:PSS, triphenylamine, phosphate carbazole and NiO x All of them have good stability and are easy to prepare.

[0101] In the technical solution of the embodiment of the present application, when the material of the hole transport layer 11 and the material of the electron transport layer 12 include the above materials, the electrons and holes in the film layer of the solar cell have a higher transmission efficiency, thereby improving the photoelectric conversion efficiency of the solar cell.

[0102] In some embodiments, see Figure 7 The electron transport layer 12 further has a hole blocking layer 70 on the side facing away from the perovskite layer 30 , and the hole blocking layer 70 includes BCP and / or SnO 2 .

[0103] In the technical solution of the embodiment of the present application, a hole blocking layer 70 is provided on the side of the electron transport layer 12 facing away from the perovskite layer 30, so that electrons can be transmitted and holes can be blocked, so that the electrons and holes in the film layer of the solar cell have a higher transmission efficiency, thereby improving the photoelectric conversion efficiency of the solar cell.

[0104] According to some embodiments of the present application, the present application provides a method for preparing a solar cell, comprising the following steps:

[0105] Set up transport layer 10;

[0106] Providing a perovskite layer 30;

[0107] A passivation layer 20 is provided, wherein the passivation layer 20 is located between the transmission layer 10 and the perovskite layer 30 , and the passivation layer 20 is a triazine derivative.

[0108] In the technical solution of the embodiment of the present application, the transmission layer 10, the passivation layer 20 and the perovskite layer 30 may be arranged in sequence.

[0109] In the technical solution of the embodiment of the present application, the perovskite layer 30, the passivation layer 20 and the transmission layer 10 may also be arranged in sequence.

[0110] In the technical solution of the embodiment of the present application, the transport layer 10 includes a hole transport layer 11, and the passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0111] In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11, and the passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the electron transport layer 12, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, the electron transport layer 12, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0112] In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12, and the passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the electron transport layer 12, the passivation layer 20, the perovskite layer 30 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the perovskite layer 30, the passivation layer 20, the electron transport layer 12, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0113] In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11, and the passivation layer 20 is located between the electron transport layer 12 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0114] In the technical solution of the embodiment of the present application, the transport layer 10 includes an electron transport layer 12 and a hole transport layer 11, and the solar cell 100 has two passivation layers 20, one of which is located between the electron transport layer 12 and the perovskite layer 30, and the other passivation layer 20 is located between the hole transport layer 11 and the perovskite layer 30. In the formal solar cell 100, the negative electrode film layer 60, the electron transport layer 12, the passivation layer 20, the perovskite layer 30, the passivation layer 20, the hole transport layer 11 and the positive electrode film layer 50 are sequentially arranged on the substrate 40. In the inverted solar cell 100, the positive electrode film layer 50, the hole transport layer 11, the passivation layer 20, the perovskite layer 30, the passivation layer 20, the electron transport layer 12, and the negative electrode film layer 60 are sequentially arranged on the substrate 40.

[0115] In the technical solution of the embodiment of the present application, by using triazine derivatives as the passivation layer 20, the passivation layer 20 is located between the transmission layer 10 and the perovskite layer 30, at least a part of the functional groups of the triazine derivatives are coordinated with the transmission layer 10, and at the same time, at least another part of the functional groups of the triazine derivatives are coordinated with the iodine and lead atoms in the perovskite layer 30, thereby reducing the defects between the transmission layer 10 and the perovskite layer 30, and further weakening the redox reaction between the metal cations, iodine ions, and hydrogen ions between the transmission layer 10 and the perovskite layer 30, thereby increasing the stability of the solar cell 100.

[0116] In some embodiments, in the step of providing the passivation layer 20, a passivation precursor is used to form the passivation layer 20, and the passivation precursor includes a triazine derivative and a solvent, and the concentration of the triazine derivative is 0.1-3 mg / mL.

[0117] In the technical scheme of the embodiment of the present application, the concentration of the triazine derivative can be 0.1 mg / mL, 0.15 mg / mL, 0.25 mg / mL, 0.3 mg / mL, 0.5 mg / mL, 0.8 mg / mL, 0.85 mg / mL, 1 mg / mL, 1.3 mg / mL, 1.5 mg / mL, 1.55 mg / mL, 1.6 mg / mL, 1.65 mg / mL, 1.755 mg / mL, 1.8 mg / mL, 1.83 mg / mL, 1.95 mg / mL, 2 mg / mL, 2.185 mg / mL, 2.21 mg / mL, 2.3 mg / mL, 2.5 mg / mL. g / mL, 2.755mg / mL, 2.8mg / mL, 2.85mg / mL, 2.9mg / mL, 2.93mg / mL, 3mg / mL, etc., or a range consisting of any two of the above values, for example, it can be 0.1-0.25mg / mL, 0.3-0.8mg / mL, 0.85-1mg / mL, 1-1.6mg / mL, 1.65-1.8mg / mL, 1.8-2mg / mL, 2-2.3mg / mL, 2.5-2.8mg / mL, 2.8-3mg / mL, etc., according to actual needs, as long as it is in the range of 0.1-3mg / mL.

[0118] In the technical solution of the embodiment of the present application, the concentration of the triazine derivative is 0.1-3 mg / mL, and the passivation layer formed has both better passivation effect and higher photoelectric conversion efficiency.

[0119] In addition, if the concentration of the triazine derivative is lower than 0.1 mg / mL, the passivation effect is poor; if the concentration of the triazine derivative is higher than 3 mg / mL, the charge transfer is affected. Therefore, when the concentration of the triazine derivative is within the above range, the passivation layer formed has both better passivation effect and higher photoelectric conversion efficiency.

[0120] In some embodiments, the passivation precursor is annealed to form a passivation layer at a temperature of 80-120°C.

[0121] In the technical solution of the embodiment of the present application, the transmission layer 10, the passivation layer 20 and the perovskite layer 30 can be arranged in sequence, wherein, in the step of setting the passivation layer 20, a passivation precursor is coated on the transmission layer 10, and the passivation precursor is annealed to form the passivation layer 20, and the annealing temperature is 80-120°C.

[0122] In the technical solution of the embodiment of the present application, a perovskite layer 30, a passivation layer 20 and a transmission layer 10 can be set, wherein in the step of setting the passivation layer 20, a passivation precursor is coated on the perovskite layer 30, and the passivation precursor is annealed to form the passivation layer 20, and the annealing temperature is 80-120°C.

[0123] In the technical solution of the embodiment of the present application, the annealing temperature is 80°C, 83°C, 85°C, 88.6°C, 90°C, 92°C, 96°C, 98°C, 100°C, 103°C, 104°C, 105°C, 110°C, 112°C, 113°C, 115°C, 118.5°C, 119°C, 120°C, etc., or a range consisting of any two of the above values, for example, it can be 80-85°C, 85-96°C, 98-103°C, 104-110°C, 112-115°C, 115-120°C, etc., and can be selected according to actual needs, as long as it is within the range of 80-120°C.

[0124] In the technical solution of the embodiment of the present application, the passivation layer 20 is formed by annealing the passivation precursor. At the same time, the annealing temperature is within the above-mentioned range, which can take into account the volatilization rate of the solvent and the stability of the triazine derivative, so that the formed passivation layer 20 has good film performance and high stability, thereby increasing the stability of the solar cell.

[0125] In some embodiments, the solvent includes at least one of isopropanol, methanol, and ethanol.

[0126] In the technical solution of the embodiment of the present application, the solvent can be isopropanol, methanol, ethanol, a mixture of isopropanol and methanol, a mixture of isopropyl ether and ethanol, a mixture of methanol and ethanol, a mixture of isopropanol, methanol and ethanol. In other embodiments, the solvent may also include other alcohols, such as butanol, etc.

[0127] In the technical solution of the embodiment of the present application, by adopting the above solvents, the solubility of the triazine derivative and the volatility of the solvent can be taken into account, which is conducive to forming a passivation layer 20 with good performance, thereby increasing the stability of the solar cell.

[0128] In some embodiments, in the step of providing the perovskite layer 30, the perovskite layer 30 is formed by coating a perovskite precursor and annealing, wherein the concentration of lead ions in the perovskite precursor is 1-2 mol / L, and may be 1.5-1.8 mol / L.

[0129] In the technical scheme of the embodiment of the present application, the concentration of lead ions is 1mol / L, 1.05mol / L, 1.1mol / L, 1.2mol / L, 1.3mol / L, 1.42mol / L, 1.5mol / L, 1.58mol / L, 1.6mol / L, 1.65mol / L, 1.7mol / L, 1.75mol / L, 1.8mol / L, 1.9mol / L, 1.92mol / L, 1.95mol / L, 2mol / L, etc., or a range consisting of any two of the above values, for example, it can be 1mol / L-1.2mol / L, 1.5-1.8mol / L, 1.3-1.5mol / L, 1.5-1.65mol / L, 1.7-1.8mol / L, 1.9-2mol / L, etc., and can be selected according to actual needs, as long as it is within the range of 1-2mol / L.

[0130] In the technical solution of the embodiment of the present application, the concentration of the perovskite precursor is calibrated with the concentration of lead ions in the perovskite precursor. When the concentration of lead ions is within the above range, the perovskite has good photoelectric conversion efficiency.

[0131] In addition, when the concentration of lead ions is high, the concentration of the reactants that generate the perovskite layer is also high. When the same thickness of the perovskite precursor is coated, the thickness of the generated perovskite layer is large, resulting in an increase in the electron and hole transmission path, resulting in low photoelectric conversion efficiency; when the concentration of lead ions is low, when the same thickness of the perovskite precursor is coated, the thickness of the generated perovskite layer is also small, resulting in a small number of electrons and holes, resulting in low photoelectric conversion efficiency. Therefore, when the concentration of lead ions is within the above range, perovskite has good photoelectric conversion efficiency.

[0132] See also Figure 8 The present application also provides an electrical device 1000, comprising the solar cell 100 as described above or the solar cell 100 prepared by the method for preparing a solar cell as described above.

[0133] In the present application, the solar cell 100 is used as a power source of the electrical device 1000 to supply power to the electrical device 1000; or, the solar cell 100 can be used as an energy storage unit of the electrical device 1000. As an example, the electrical device 1000 can be a lighting element, a display element, or a car.

[0134] The features and performance of the present application are further described in detail below in conjunction with the embodiments.

[0135] Embodiment 1:

[0136] This embodiment provides a method for preparing a solar cell, comprising the following steps:

[0137] providing a substrate;

[0138] A positive electrode film layer is arranged on the substrate, wherein the positive electrode film layer is FTO;

[0139] A hole transport layer is provided on the positive electrode film layer, wherein the hole transport layer is NiO x For nanoparticles;

[0140] A passivation precursor is disposed on the hole transport layer, and then annealed to form a passivation layer, wherein the passivation precursor includes a triazine derivative and isopropanol, and the triazine derivative is

[0141] A perovskite precursor is placed on the passivation layer, and then annealed to form a perovskite layer, wherein the perovskite layer is Cs 0.05 FA 0。85 MA 0.10 PbI3, lead ion concentration is 1.6 mol / L;

[0142] An electron transport layer is provided on the perovskite layer, wherein the electron transport layer is C60 and the hole blocking layer is BCP, wherein C60 is evaporated first and then BCP is evaporated; and

[0143] A negative electrode film layer is evaporated on the electron transport layer, wherein the negative electrode film layer is copper.

[0144] The solar cell provided in Example 1 includes a substrate, a positive electrode film layer, a hole transport layer, a passivation layer, a perovskite layer, an electron transport layer and a negative electrode film layer.

[0145] Embodiment 2:

[0146] This embodiment provides a method for preparing a solar cell, comprising the following steps:

[0147] providing a substrate;

[0148] A positive electrode film layer is arranged on the substrate, wherein the positive electrode film layer is FTO;

[0149] A hole transport layer is provided on the positive electrode film layer, wherein the hole transport layer is NiO x For nanoparticles;

[0150] A perovskite precursor is placed on the hole transport layer, and then annealed to form a perovskite layer, wherein the perovskite layer is Cs 0.05 FA0。85 MA 0.10 PbI3, lead ion concentration is 1.6 mol / L;

[0151] A passivation precursor is disposed on the perovskite layer, and then annealed to form a passivation layer, wherein the passivation precursor includes a triazine derivative and isopropanol, and the triazine derivative is

[0152] An electron transport layer is arranged on the passivation layer, wherein the electron transport layer is C60 and the hole blocking layer is BCP, wherein C60 is evaporated first and then BCP is evaporated; and

[0153] A negative electrode film layer is evaporated on the electron transport layer, wherein the negative electrode film layer is copper.

[0154] The solar cell provided in Example 2 includes a substrate, a positive electrode film layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and a negative electrode film layer.

[0155] Embodiment 3:

[0156] This embodiment provides a method for preparing a solar cell, comprising the following steps:

[0157] providing a substrate;

[0158] A positive electrode film layer is arranged on the substrate, wherein the positive electrode film layer is FTO;

[0159] A hole transport layer is provided on the positive electrode film layer, wherein the hole transport layer is NiO x For nanoparticles;

[0160] A passivation precursor is disposed on the hole transport layer, and then annealed to form a passivation layer, wherein the passivation precursor includes a triazine derivative and isopropanol, and the triazine derivative is

[0161] A perovskite precursor is placed on the passivation layer, and then annealed to form a perovskite layer, wherein the perovskite layer is Cs 0.05 FA 0。85 MA 0.10 PbI3, lead ion concentration is 1.6 mol / L;

[0162] A passivation precursor is disposed on the perovskite layer, and then annealed to form a passivation layer, wherein the passivation precursor includes a triazine derivative and isopropyl alcohol;

[0163] An electron transport layer is arranged on the passivation layer, wherein the electron transport layer is C60 and the hole blocking layer is BCP, wherein C60 is evaporated first and then BCP is evaporated; and

[0164] A negative electrode film layer is evaporated on the electron transport layer, wherein the negative electrode film layer is copper.

[0165] The solar cell provided in Example 3 includes a substrate, a positive electrode film layer, a hole transport layer, a passivation layer, a perovskite layer, a passivation layer, an electron transport layer and a negative electrode film layer.

[0166] Comparative Example:

[0167] The comparative example provides a method for preparing a solar cell, comprising the following steps:

[0168] providing a substrate;

[0169] A positive electrode film layer is arranged on the substrate, wherein the positive electrode film layer is FTO;

[0170] A hole transport layer is provided on the positive electrode film layer, wherein the hole transport layer is NiO x For nanoparticles;

[0171] A perovskite precursor is placed on the hole transport layer, and then annealed to form a perovskite layer, wherein the perovskite layer is Cs 0.05 FA 0。85 MA 0.10 PbI3, lead ion concentration is 1.6 mol / L;

[0172] An electron transport layer is provided on the perovskite layer, wherein the electron transport layer is C60 and the hole blocking layer is BCP, wherein C60 is evaporated first and then BCP is evaporated; and

[0173] A negative electrode film layer is evaporated on the electron transport layer, wherein the negative electrode film layer is copper.

[0174] The solar cell provided in the comparative example includes a substrate, a positive electrode film layer, a hole transport layer, a perovskite layer, an electron transport layer and a negative electrode film layer.

[0175] The solar cells of Examples 1-3 and the comparative example were tested for photoelectric conversion efficiency and photoelectric conversion efficiency change after aging. The test method is as follows. The test results are shown in Table 1:

[0176] 1. Photoelectric conversion efficiency change test:

[0177] In standard simulated sunlight (AM 1.5G, 100mW / cm 2 ) irradiation, the battery performance is tested to obtain the IV curve. According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2), open circuit voltage Voc (unit V), maximum light output current Jmpp (unit mA) and maximum light output voltage Vmpp (unit V). The fill factor FF of the cell is calculated by the formula FF = Jsc × Voc / (Jmpp × Vmpp), unit %. The photoelectric conversion efficiency PCE of the cell is calculated by the formula PCE = Jsc × Voc × FF / Pw, unit %; Pw represents the input power, unit mW.

[0178] The initial photoelectric conversion efficiency of the comparative example is recorded as IPCE0, the initial photoelectric conversion efficiency of the nth group of experiments is recorded as IPCEn, and the photoelectric conversion efficiency change of the nth group of experiments = (IPCEn / IPCE0-1)×100%.

[0179] 2. Test of photoelectric conversion efficiency change after aging:

[0180] In standard simulated sunlight (AM 1.5G, 100mW / cm 2 ) under irradiation at 65°C, the solar cells of Examples 1-3 and the comparative example were placed in sunlight for 500 hours.

[0181] Test the battery performance and obtain the IV curve. According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2 ), open circuit voltage Voc (unit V), maximum light output current Jmpp (unit mA) and maximum light output voltage Vmpp (unit V). The fill factor FF of the cell is calculated by the formula FF = Jsc × Voc / (Jmpp × Vmpp), unit %. The photoelectric conversion efficiency PCE of the cell is calculated by the formula PCE = Jsc × Voc × FF / Pw, unit %; Pw represents the input power, unit mW.

[0182] The initial photoelectric conversion efficiency of the comparative example is recorded as IPCE0, the initial photoelectric conversion efficiency of the nth group of experiments is recorded as IPCEn, and the photoelectric conversion efficiency change of the nth group of experiments = (IPCEn / IPCE0-1)×100%.

[0183] Table 1: Solar cell performance parameters of Examples 1-3 and Comparative Examples

[0184] sample Photoelectric conversion efficiency change (%) Change in photoelectric conversion efficiency after aging (%) Example 1 - Sample 1 +20％ +31％ Example 1 - Sample 2 +18％ +35％ Example 1 - Sample 3 +22％ +32％ Example 2 - Sample 1 +5％ +27％ Example 2 - Sample 2 +9％ +26％ Example 2 - Sample 3 +7％ +28％ Example 3 - Sample 1 +23％ +40％ Example 3 - Sample 2 +24％ +38％ Comparative Example PCE19% 12％

[0185] The test results of Examples 1-3 and the comparative example in Table 1 show that the photoelectric conversion efficiency change and the photoelectric conversion efficiency change after aging of the perovskite solar cell provided by the present application are high, and the solar cell has high stability.

[0186] Furthermore, through comparison between Examples 1-3, the change in photoelectric conversion efficiency and the change in photoelectric conversion efficiency after aging of the perovskite solar cell of Example 3 are higher than those of the perovskite solar cells of Examples 1 and 2, that is, the change in photoelectric conversion efficiency and the change in photoelectric conversion efficiency after aging of the perovskite solar cell with a passivation layer on both sides of the perovskite are higher than the change in photoelectric conversion efficiency and the change in photoelectric conversion efficiency after aging of the perovskite solar cell with a passivation layer only on one side of the perovskite.

[0187] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced with equivalents without departing from the scope of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A solar cell, characterized in that: include: Transport layer; Perovskite layer; as well as The passivation layer is located between the transmission layer and the perovskite layer, and the passivation layer is a triazine derivative.

2. The solar cell according to claim 1, wherein: The transport layer includes a hole transport layer, and the passivation layer is located between the hole transport layer and the perovskite layer; or The transport layer includes an electron transport layer, and the passivation layer is located between the electron transport layer and the perovskite layer.

3. The solar cell according to claim 1, wherein: The transport layer includes a hole transport layer and an electron transport layer, and the solar cell has two passivation layers, wherein one passivation layer is located between the hole transport layer and the perovskite layer, and the other passivation layer is located between the electron transport layer and the perovskite layer.

4. The solar cell according to any one of claims 1 to 3, characterized in that: The triazine derivative is Wherein, X, Y, and Z include at least one of F, Cl, Br, OH, COOH, NH2, NHCl, and NHBr; j is greater than or equal to 0, n is greater than or equal to 0, and m is greater than or equal to 0.

5. The solar cell according to any one of claims 1 to 4, characterized in that: The thickness of the passivation layer is 1-5 nm.

6. The solar cell according to any one of claims 1 to 5, characterized in that: The perovskite layer is R a FA b MA c PbI3, element R is Cs, a+b+c=1, a is 0-0.05, b is 0.8-0.95, and c is 0-0.

15.

7. The solar cell according to any one of claims 1 to 6, characterized in that: The thickness of the perovskite layer is 400-500 nm.

8. The solar cell according to any one of claims 2 to 7, characterized in that: The material of the electron transport layer includes PCBM and / or C60, the material of the hole transport layer includes at least one of poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine] (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine], PTAA), 3,4-ethylenedioxythiophene monomer: polystyrenesulfonate (Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate, PEDOT:PSS), triphenylamine, phosphate carbazole and NiOx, and the range of x is 1.5-2.

5.

9. The solar cell according to any one of claims 2 to 8, characterized in that: The electron transport layer further has a hole blocking layer on the side facing away from the perovskite layer. The hole blocking layer includes BCP and / or SnO2.

10. A method for preparing the solar cell according to any one of claims 1 to 9, characterized in that: include: Set the transport layer; Providing a perovskite layer; A passivation layer is provided, wherein the passivation layer is located between the transmission layer and the perovskite layer, and the passivation layer is a triazine derivative.

11. The method for preparing a solar cell according to claim 10, characterized in that: In the step of providing the passivation layer, a passivation precursor is used to form the passivation layer. The passivation precursor includes a triazine derivative and a solvent. The concentration of the triazine derivative is 0.1-3 mg / mL.

12. The method for preparing a solar cell according to claim 11, characterized in that: The passivation precursor is annealed to form the passivation layer, and the annealing temperature is 80-120°C.

13. The method for preparing a solar cell according to any one of claims 10 to 12, characterized in that: The solvent includes at least one of isopropanol, methanol and ethanol.

14. The method for preparing a solar cell according to any one of claims 10 to 13, characterized in that: In the step of providing the perovskite layer, a perovskite precursor is used to form the perovskite layer, wherein the concentration of lead ions in the perovskite precursor is 1-2 mol / L.

15. An electrical device, comprising the solar cell according to any one of claims 1 to 9 or the solar cell prepared by the method for preparing a solar cell according to any one of claims 10 to 14.

Images