Perovskite solar cell buried interface modifier and preparation method and application thereof

Abstract

The invention discloses a perovskite solar cell buried interface modifier and a preparation method and application thereof, and belongs to the technical field of photovoltaic solar materials. The 2-(benzoylamino) benzoic acid serves as a perovskite solar cell buried interface modifier, the molecule has a structure shown in a formula (1), the molecule takes benzoic acid as an anchoring group and is used for modifying a hole transport layer NiOx / perovskite interface layer, defects at a NiOx / perovskite layer thin film crystal boundary are reduced, the morphology of the perovskite layer thin film is regulated and controlled, and the performance of the perovskite solar cell is improved. The charge transfer capability of the NiOx / perovskite layer interface is enhanced, the interface reaction and carrier recombination are inhibited, the photoelectric conversion efficiency and stability of the perovskite solar cell are improved, and a new preparation way is provided for preparing the efficient and stable perovskite solar cell. # imgabs0 #

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic solar energy materials, and more specifically, to a perovskite solar cell bottom-burying modifier, a preparation method and an application thereof. Background Art

[0002] As an indispensable part of traditional perovskite solar cells (PSCs), hole transport layers (HTLs) play an important role in enhancing the performance of PSCs by increasing hole collection, blocking electrons, and protecting perovskites from external influences such as moisture, heat, and oxygen. As a commonly used hole transport material (HTM), nickel oxide (NiO x ) has shown great promise in various photovoltaic devices due to its inherent excellent chemical stability, high hole mobility and low manufacturing cost. x The power conversion efficiency (PCE) of halide PSCs has made great progress. However, as a typical HTM, NiO x In practical applications, it is easily affected by subsequent processing, resulting in low photoelectric conversion efficiency and poor stability of the device. This is due to the adverse reaction between perovskite and highly active nickel and the NiO x Carrier recombination at the / perovskite interface.

[0003] At present, there are generally two ways to improve the above defects. One is to directly modify the nickel oxide layer. CN118265409A discloses a method for preparing a high-performance nickel oxide hole transport layer at low temperature, preparing a nitrogen-doped nickel oxide film as a hole transport layer, and the average photoelectric conversion efficiency of a flexible perovskite solar cell based on a nitrogen-doped nickel oxide hole transport layer is increased from 13.9% to 15.4%. Although the photoelectric efficiency has been improved, it is still relatively low.

[0004] The second is in NiO x / Add an interface modification layer at the perovskite interface to improve the adverse reaction between perovskite and highly active nickel and NiO x / perovskite interface. The photoelectric efficiency obtained by interface engineering is higher than that of direct modification, among which the photoelectric efficiency of organic molecule surface modification is mostly between 17% and 20%. Qin Wang et al. published a series of benzoic acid self-assembled monolayer modified NiO x , its photoelectric efficiency is 18.4%, and the photoelectric efficiency still needs to be improved.

[0005] Therefore, a method for acting as a hole transport layer NiO was developed. x It is very important to develop new modifiers between the nanostructured and perovskite layers to improve the photoelectric conversion efficiency and stability of perovskite solar cells. Summary of the invention

[0006] The primary purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide an application of a small molecule compound in a bottom interface modifier for a perovskite solar cell.

[0007] Another object of the present invention is to provide a buried interface modifier for a perovskite solar cell.

[0008] Another object of the present invention is to provide a method for preparing a buried interface modifier for a perovskite solar cell.

[0009] Another object of the present invention is to provide the use of a buried interface modifier for a perovskite solar cell in the preparation of a perovskite solar cell.

[0010] Another object of the present invention is to provide a perovskite solar cell.

[0011] Another object of the present invention is to provide a method for preparing a perovskite solar cell.

[0012] The above technical objectives of the present invention are achieved through the following technical solutions:

[0013] Application of a small molecule compound as a buried interface modifier for perovskite solar cells.

[0014] Specifically, the small molecule compound is 2-(benzoylamino)benzoic acid.

[0015] The preparation method of 2-(benzoylamino)benzoic acid of the present invention refers to the literature (Changshu Wu, YangGao, et al. Ag-Catalyzed Practical Synthesis of N-Acyl Anthranilic Acids from Anthranils and Carboxylic Acids. The Journal of Organic Chemistry, 2024, 89, 3150-3160. DOI: doi.org / 10.1021 / acs.joc.3c02586).

[0016] A perovskite solar cell buried interface modifier comprises: 2-(benzoylamino)benzoic acid.

[0017] 2-(Benzoyl amino)benzoic acid can be used as a buried interface modifier to passivate the defects at the interface between the perovskite layer and the hole transport layer. 2-(Benzoyl amino)benzoic acid can form a dense and compact modification layer, which can effectively reduce the direct contact between the perovskite layer and the highly active nickel oxide in the hole transport layer, thereby reducing the adverse reactions between the perovskite layer and trivalent and tetravalent nickel oxides and inhibiting the NiO in the hole transport layer. x Recombination with charge carriers at the interface of the perovskite layer further improves the photoelectric conversion efficiency and stability of perovskite solar cells.

[0018] Specifically, the solvent of the interface modifier is an alcohol solvent, selected from at least one of methanol, ethanol or isopropanol.

[0019] Specifically, the concentration of 2-(benzoylamino)benzoic acid in the interface modifier is 0.80-1.20 mg / mL.

[0020] The purpose of controlling the concentration of 2-(benzoylamino)benzoic acid in the interface modifier to 0.80-1.20 mg / mL is to improve the photoelectric efficiency of the perovskite cell.

[0021] Specifically, the bottom buried interface modifier of the perovskite solar cell includes: 2-(benzoylamino)benzoic acid and Me-2PACz.

[0022] Me-2PACz is a SAM molecule and a P-type semiconductor with the advantages of high hole selectivity, high hole transfer rate and low interface trap state density. It modifies and improves the energy level arrangement of the perovskite material, making it more hydrophobic. By modifying the buried interface, it further induces a perovskite layer with larger grains and high crystallinity.

[0023] The perovskite solar cell buried interface modifier provided by the present invention is used to improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0024] More specifically, the concentration of 2-(benzoylamino)benzoic acid in the interface modifier is 0.10 to 0.30 mg / mL.

[0025] More specifically, the concentration of Me-2PACz in the interface modifier is 0.3-0.5 mg / mL.

[0026] The synergistic effect of Me-2PACz and 2-(benzoylamino)benzoic acid can further improve the photoelectric efficiency. When the two work synergistically, if the concentration of 2-(benzoylamino)benzoic acid is too low, it may lead to insufficient passivation of defects at the interface between the perovskite layer and the hole transport layer, and fail to inhibit the recombination of charge carriers at the interface. If the concentration of 2-(benzoylamino)benzoic acid is too high, the photoelectric efficiency of the perovskite solar cell decreases. The concentration of 2-(benzoylamino)benzoic acid in the range of 0.10 to 0.30 mg / mL can further improve the photoelectric efficiency and stability of perovskite solar cells.

[0027] The method for preparing the bottom buried interface modifier of the perovskite solar cell comprises the following steps:

[0028] Dissolving the 2-(benzoylamino)benzoic acid to obtain a bottom-buried interface modifier for a perovskite solar cell;

[0029] Alternatively, the 2-(benzoylamino)benzoic acid and Me-2PACz are dissolved and mixed to obtain the bottom buried interface modifier for perovskite solar cells.

[0030] Mixing 2-(Benzoylamino)benzoic acid with Me-2PACz can further improve the photoelectric efficiency and stability of perovskite solar cells.

[0031] The present invention also protects the use of the perovskite solar cell buried interface modifier in the preparation of the perovskite solar cell.

[0032] Specifically, the hole transport layer of the perovskite solar cell is NiO x .

[0033] Specifically, the bottom interface modifier of the perovskite solar cell is NiO modified hole transport layer x / perovskite layer modifiers for perovskite solar cells.

[0034] Specifically, the perovskite solar cell is an inverted perovskite solar cell.

[0035] A perovskite solar cell comprises, from bottom to top, a conductive glass layer, a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer and a metal electrode layer.

[0036] Specifically, the interface modification layer comprises 2-(benzoylamino)benzoic acid.

[0037] More specifically, the interface modification layer comprises 2-(benzoylamino)benzoic acid and Me-2PACz.

[0038] Specifically, the interface modification layer is formed by first spin-coating the perovskite solar cell buried interface modifier on the hole transport layer and then removing the solvent.

[0039] Specifically, the material of the conductive glass layer is one or both of ITO conductive glass and FTO conductive glass.

[0040] Specifically, the material of the perovskite layer is formamidine hydrohalide, alkyl ammonium halide, cesium halide and lead halide.

[0041] More specifically, the formamidine halide salt is one or more of formamidine hydrochloride, formamidine bromide, and formamidine iodide.

[0042] More specifically, the alkyl ammonium halide is one or more of methyl ammonium iodide, methyl ammonium chloride, methyl triethyl ammonium iodide, dimethyl diethyl ammonium iodide, nonyl ammonium iodide or dodecyl dimethyl ethyl ammonium iodide.

[0043] More specifically, the cesium halide is one or more of cesium iodide, cesium chloride or cesium bromide.

[0044] More specifically, the lead halide is one or more of lead iodide, lead chloride or lead bromide.

[0045] Specifically, the material of the electron transport layer is a carbon 60 derivative.

[0046] More specifically, the carbon 60 derivative is one or more of [6,6]-phenyl C61 butyric acid methyl ester, [6,6]-thienyl C61 butyric acid methyl ester, [6,6]-phenyl-C61-butyric acid n-octyl ester or [6,6]-phenyl-C61-butyric acid dodecyl ester.

[0047] Carbon 60 derivatives inherit the conjugated cage-like carbon molecular structure of fullerene, which makes them have excellent electron-accommodating capacity and high electron mobility.

[0048] Specifically, the material of the metal electrode layer is one or more of silver, gold or copper.

[0049] A method for preparing a perovskite solar cell comprises: sequentially preparing a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer on a conductive glass layer by a spin coating method, so as to obtain the perovskite solar cell.

[0050] Specifically, the preparation method of the hole transport layer is as follows: the conductive glass is ultrasonically cleaned alternately with detergent, ionized water, acetone and isopropanol, and blown dry with argon gas, and then treated with ultraviolet ozone, and a hole transport layer solution prepared with the material of the hole transport layer is spin-coated on the surface of the conductive glass to obtain the hole transport layer.

[0051] Specifically, the preparation method of the interface modification layer is as follows: the interface modification material is prepared into an interface modification solution, and the solution is spin-coated on the surface of the hole transport layer to obtain the interface modification layer.

[0052] Specifically, the method for preparing the perovskite layer is as follows: spin coating a perovskite solution prepared from the material of the perovskite layer on the surface of the hole transport layer to obtain the perovskite layer.

[0053] More specifically, the solvent of the perovskite solution is one or more of DMF, DMSO, THF, acetone, isopropanol, toluene or chlorobenzene.

[0054] Specifically, the preparation method of the electron transport layer is as follows: the material of the electron transport layer is prepared into an electron transport layer solution, which is spin-coated on the surface of the perovskite modified layer, and then bathocuproine (BCP) is spin-coated to obtain the electron transport layer.

[0055] More specifically, the spin coating time in the preparation method is 10 to 30 seconds.

[0056] More specifically, the rotation speed of the spin coating in the preparation method is 1000 to 5000 rpm.

[0057] The function of bathocuproin is to block the transmission of holes, which can improve the performance of solar cell devices.

[0058] Specifically, the method for preparing the metal electrode layer is as follows: placing the electron transport layer in a vacuum coating machine and performing evaporation to obtain the metal electrode layer.

[0059] The present invention has the following beneficial effects:

[0060] (1) 2-(Benzoylamino)benzoic acid is used as a buried interface modifier. This molecule uses benzoic acid as an anchoring group. By reducing the defects at the grain boundary between the hole transport layer and the perovskite layer, the morphology of the perovskite layer is regulated. At the same time, charge collection is enhanced and interface reactions and carrier recombination are inhibited, thereby improving the photoelectric conversion efficiency of perovskite solar cells and the stability of the cells.

[0061] (2) 2-(Benzoylamino)benzoic acid and Me-2PACz were used as bottom-surface modifiers. The synergistic effect of the two further improved the photoelectric conversion efficiency of perovskite solar cells and the stability of the cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 JV curves of perovskite solar cells of embodiments and comparative examples.

[0063] Figure 2 2 are steady-state photoluminescence (PL) spectra of the perovskite layers of Example 3 and Comparative Example 2.

[0064] Figure 3 2 are time-resolved photoluminescence (TRPL) spectra of the perovskite layers of Example 2 and Comparative Example 2.

[0065] Figure 4 The normalized efficiency-time curves of the perovskite solar cells of Example 3 and Comparative Example 2 are shown. DETAILED DESCRIPTION

[0066] The present invention is further described below in conjunction with examples. These examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. The experimental methods in the following examples that do not specify specific conditions are usually carried out according to conventional conditions in the art or according to the conditions recommended by the manufacturer; the raw materials, reagents, etc. used, unless otherwise specified, are all raw materials and reagents that can be obtained from commercial channels such as conventional markets. Any non-substantial changes and substitutions made by those skilled in the art on the basis of the present invention belong to the scope of protection claimed by the present invention.

[0067] The preparation method of 2-(benzoylamino)benzoic acid of the present invention is based on the literature (Changshu Wu, YangGao, et al. Ag-Catalyzed Practical Synthesis of N-Acyl Anthranilic Acids from Anthranils and Carboxylic Acids. The Journal of Organic Chemistry, 2024, 89, 3150-3160. DOI: doi.org / 10.1021 / acs.joc.3c02586), wherein 2-(benzoylamino)benzoic acid has a molecular structure shown in formula (1):

[0068]

[0069] Example 1

[0070] This embodiment provides a bottom buried interface modifier for a perovskite solar cell, comprising: 2-(benzoylamino)benzoic acid with a concentration of 1.00 mg / mL.

[0071] The method for preparing the above-mentioned perovskite solar cell buried interface modifier comprises the following steps:

[0072] 1.00 mg of 2-(benzoylamino)benzoic acid was dissolved in 1 mL of isopropanol and magnetically stirred for 1 hour to obtain a buried interface modifier for perovskite solar cells.

[0073] A perovskite solar cell comprises, from bottom to top, a conductive glass layer, a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer and a metal electrode layer.

[0074] The interface modification layer is formed by first spin coating the perovskite solar cell bottom interface modifier on the hole transport layer and then removing the solvent.

[0075] The method for preparing the perovskite solar cell comprises the following steps:

[0076] S1: The ITO conductive glass was ultrasonically cleaned with detergent, deionized water, acetone and isopropanol for 15 min, and then dried with argon gas. Then, it was placed in a UV-ozone cleaning machine for UV-ozone treatment. After the treatment, 40 μL 15 mg / mL NiO was spin-coated on the surface of the conductive glass layer in air. x The solution was spin-coated at a speed of 4000 rpm and a spin-coating time of 30 s. After the spin coating, it was transferred to a heating platform and heated at 150°C for 30 min to obtain a hole transport layer;

[0077] S2: In a glove box with nitrogen atmosphere, spin-coat 40 μL of interface modifier on the hole transport layer at a spin-coating speed of 4000 rpm for 30 seconds. Then transfer to a heating stage for heating to obtain an interface modification layer;

[0078] S3: In a glove box with a nitrogen atmosphere, 68 μL of perovskite solution was first spin-coated on the surface of the interface modification layer at a rotation speed of 1000 rpm for 10 s, then at a rotation speed of 5000 rpm for 30 s, and chlorobenzene was added dropwise in the remaining 10 s, and then the layer was transferred to a heating table and heated at 100 °C for 30 min to obtain a perovskite layer;

[0079] S4: In a glove box with a nitrogen atmosphere, 23 mg of the electron transport layer material [6,6]-phenyl C61 butyric acid methyl ester (PC 61 BM) was dissolved in 1 mL of chlorobenzene to prepare PC 61 BM electron transport layer solution, and take 28 μL PC 61 The BM electron transport layer solution was spin-coated on the surface of the perovskite modified layer at a spin-coating speed of 3000 rpm for 30 s. After the spin-coating, it was transferred to a heating table and heated at 65 °C for 10 min. Then, 35 μL of 2.5 mg / mL bathocuproin (BCP) was spin-coated at a spin-coating speed of 5000 rpm for 30 s to obtain an electron transport layer.

[0080] S5: Place the electron transport layer into a vacuum coating machine, evacuate the vacuum, place the silver metal source into a tungsten boat, evaporate the silver metal electrode, and obtain a perovskite solar cell.

[0081] Example 2

[0082] This embodiment provides a bottom-buried interface modifier for a perovskite solar cell, comprising: 0.10 mg / mL 2-(benzoylamino)benzoic acid and 0.40 mg / mL Me-2PACz.

[0083] The method for preparing the bottom buried interface modifier of the perovskite solar cell comprises the following steps:

[0084] 0.10 mg of 2-(benzoylamino)benzoic acid and 0.40 mg of Me-2PACz were dissolved in 1 mL of isopropanol and magnetically stirred for 1 hour to obtain a buried interface modifier for perovskite solar cells.

[0085] A perovskite solar cell and a preparation method thereof are both referred to Example 1.

[0086] Example 3

[0087] This embodiment provides a bottom-buried interface modifier for a perovskite solar cell, comprising: 0.20 mg / mL 2-(benzoylamino)benzoic acid and 0.40 mg / mL Me-2PACz.

[0088] The method for preparing the bottom buried interface modifier of the perovskite solar cell comprises the following steps:

[0089] 0.20 mg of 2-(benzoylamino)benzoic acid and 0.40 mg of Me-2PACz were dissolved in 1 mL of isopropanol and magnetically stirred for 1 hour to obtain a buried interface modifier for perovskite solar cells.

[0090] A perovskite solar cell and a preparation method thereof are both referred to Example 1.

[0091] Example 4

[0092] This embodiment provides a bottom buried interface modifier for a perovskite solar cell, comprising: 0.30 mg / mL 2-(benzoylamino)benzoic acid and 0.40 mg / mL Me-2PACz.

[0093] The method for preparing the bottom buried interface modifier of the perovskite solar cell comprises the following steps:

[0094] 0.30 mg of 2-(benzoylamino)benzoic acid and 0.40 mg of Me-2PACz were dissolved in 1 mL of isopropanol and magnetically stirred for 1 hour to obtain a buried interface modifier for perovskite solar cells.

[0095] A perovskite solar cell and a preparation method thereof are both referred to Example 1.

[0096] Comparative Example 1

[0097] This comparative example provides a perovskite solar cell, which is different from Example 1 only in that the interface modification layer does not contain 2-(benzoylamino)benzoic acid, and the rest is consistent with Example 1.

[0098] The method for preparing the perovskite solar cell is different from that of Example 1 only in that the preparation of the interface modifier solution does not contain 2-(benzoylamino)benzoic acid, and the rest is consistent with Example 1.

[0099] Comparative Example 2

[0100] The comparative example provides a perovskite solar cell, which is different from Example 2 only in that the interface modification layer does not contain 2-(benzoylamino)benzoic acid, and the rest is consistent with Example 2.

[0101] The method for preparing the perovskite solar cell is different from that of Example 2 only in that the preparation of the interface modifier solution does not contain 2-(benzoylamino)benzoic acid, and the rest is consistent with Example 2.

[0102] Performance Testing

[0103] The current density and voltage (JV) characteristic curves of the perovskite solar cells of the embodiment and the comparative example, i.e., the short-circuit current-open-circuit voltage curves, are measured. The test results are as follows: Figure 1 And as shown in Table 1.

[0104] At room temperature, the unpackaged perovskite solar cells of Example 3 and Comparative Example 2 were stored in a nitrogen environment for 1115 hours and subjected to a long-term stability test in air, i.e., a photoelectric conversion efficiency-time curve. The test results are shown in FIG. Figure 4 shown.

[0105] The steady-state photoluminescence analysis of the perovskite layer of the perovskite solar cell of Example 3 and Comparative Example 2 is performed, and the test results are as follows: Figure 2 As shown; transient photoluminescence analysis was performed on the perovskite layer of the perovskite solar cell of Example 2 and Comparative Example 2, and the test results are as follows Figure 3 As shown. The test structures of Examples 2 and 3 are ITO / NiO x / 2-(Benzoylamino)benzoic acid+Me-2PACz / perovskite layer, the test structure of comparative example 2 is ITO / NiO x / Me-2PACz / perovskite layer.

[0106] The experimental results are as follows:

[0107] Figure 1 The JV curves of the perovskite solar cells of the embodiment and the comparative example are shown in Table 1.

[0108] Table 1 Current density and voltage characteristic curve test results

[0109]

[0110] As shown in Table 1, the perovskite solar cell of the present invention adopts 2-(benzoylamino)benzoic acid as an interface modifier to modify the hole transport layer NiO x / perovskite layer interface, which increases the photoelectric conversion efficiency of perovskite solar cells from 19.28% to 20.82%, due to the successful improvement of the passivation layer of NiO x / perovskite layer interface, reducing the non-radiative recombination at the interface and promoting hole extraction. The benzoic acid in 2-(benzoylamino)benzoic acid can also serve as an anchor group to modify the hole transport layer NiO x / perovskite layer interface. The steric hindrance of the carbazole core in Me-2PACz limits its formation of a dense modification layer on the bottom interface of perovskite. Therefore, Me-2PACz was doped with 2-(benzoylamino)benzoic acid to modify the NiO-based x The buried interface of PSC, the two synergistically passivate NiO x / Defects of the perovskite layer. The PCE of the device doped with 2-(benzoylamino)benzoic acid increased from 21.15% to 23.82% compared with that of the device modified with Me-2PACz alone. This indicates that a dense and compact modification layer can be formed by doping Me-2PACz with 2-(benzoylamino)benzoic acid as an interface modification layer, which can effectively reduce the direct contact between the perovskite and the highly active nickel of the hole transport layer, thereby reducing the adverse reaction between the perovskite layer and the highly active trivalent and tetravalent nickel and inhibiting the NiO in the hole transport layer. x / perovskite layer interface, promotes carrier transport and further improves the photoelectric conversion efficiency of perovskite solar cells.

[0111] In addition, the photoelectric conversion efficiency of the perovskite solar cells of Examples 2 and 4 is slightly lower than 23.82% of Example 3, but greater than 21.15% of Comparative Example 2.

[0112] Figure 2 is the steady-state photoluminescence (PL) spectra of the perovskite layer in Example 3 and Comparative Example 2. Figure 2 It can be seen that the fluorescence spectrum intensity of the perovskite in Example 3 has an obvious quenching phenomenon, which indicates that by adding 2-(benzoylamino)benzoic acid to the modifier to modify the hole transport layer NiO x / perovskite layer interface, forming a dense and compact modified layer, which is beneficial to the perovskite layer and NiO x Charge extraction and transfer between them reduce non-radiative recombination at the perovskite interface.

[0113] Figure 3 The time-resolved photoluminescence (TRPL) spectra of the perovskite layer of Example 2 and Comparative Example 2. The quenching lifetime of the latter perovskite layer is more significantly reduced, indicating that the interface modification layer with 2-(benzoylamino)benzoic acid can better modify NiO x / perovskite layer interface, since the non-radiative recombination caused by defects at the interface is suppressed, the carrier extraction rate and transfer efficiency are promoted, indicating that the addition of 2-(benzoylamino)benzoic acid interface modifier has a better defect passivation effect on the interface, which is consistent with the PL results.

[0114] Figure 4 The normalized efficiency-time curves of the perovskite solar cells of Example 3 and Comparative Example 2 are shown in FIG. Figure 4 It can be seen that when the device is stored in a nitrogen environment at 25°C and the unpackaged device is tested by JV curve in air, the device efficiency of Example 3 can still maintain 82% of the initial efficiency after 1115 hours of storage, while the battery efficiency of Comparative Example 2 has decayed to 49% of the initial efficiency after 993 hours of storage. It can be seen that the stability of the device is significantly enhanced, which indicates that the interface modification by adding 2-(benzoylamino)benzoic acid can reduce the adverse reaction between the perovskite layer and the high-valent nickel, thereby achieving the improvement of the stability of the perovskite solar cell.

[0115] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. Application of a small molecule compound in a bottom interface modifier for a perovskite solar cell, characterized in that: The small molecule compound is 2-(benzoylamino)benzoic acid.

2. A perovskite solar cell buried interface modifier, characterized in that: include: 2-(Benzoylamino)benzoic acid.

3. The buried interface modifier according to claim 2, characterized in that: The concentration of 2-(benzoylamino)benzoic acid is 0.80 to 1.20 mg / mL.

4. The buried interface modifier according to claim 2, characterized in that: include: 2-(Benzoylamino)benzoic acid and Me-2PACz.

5. The buried interface modifier according to claim 4, characterized in that: The concentration of 2-(benzoylamino)benzoic acid in the buried interface modifier is 0.10-0.30 mg / mL.

6. A method for preparing a bottom-buried interface modifier for a perovskite solar cell, characterized in that: The steps include: Dissolving the 2-(benzoylamino)benzoic acid to obtain the bottom-buried interface modifier for perovskite solar cells according to any one of claims 2 to 3; Or the 2-(benzoylamino)benzoic acid and Me-2PACz are dissolved and mixed to obtain the bottom buried interface modifier of the perovskite solar cell according to any one of claims 4 to 5.

7. Use of the buried interface modifier for perovskite solar cells according to any one of claims 2 to 5 in the preparation of perovskite solar cells.

8. A perovskite solar cell, comprising, from bottom to top, a conductive glass layer, a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer and a metal electrode layer, characterized in that: The interface modification layer comprises 2-(benzoylamino)benzoic acid.

9. The perovskite solar cell according to claim 8, characterized in that: The interface modification layer comprises 2-(benzoylamino)benzoic acid and Me-2PACz.

10. A method for preparing a perovskite solar cell according to any one of claims 8 to 9, characterized in that: The preparation method comprises: using a spin coating method to sequentially prepare a hole transport layer, an interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer on a conductive glass layer, thereby obtaining the perovskite solar cell.

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