Thin Film Resistor Structure and Its Processing Method

Abstract

The present invention discloses a thin-film resistor structure and a processing method thereof. The thin-film resistor structure includes a body and pad sampling points, a trimming structure, and a current guiding structure disposed on the body. The trimming structure includes trimming notches, and the current guiding structure includes multiple rows of guiding notches. The guiding notches are arranged along the extending direction of the current guiding path, so that the current is more evenly distributed throughout the body, reducing the situation where the current accumulates near the trimming notches, thereby improving the serious local heating near the trimming notches and enhancing the stability and accuracy of the product.

Description

Technical Field

[0001] The present invention relates to the field of electronic devices, and particularly to a thin-film resistor structure and a processing method thereof. Background Art

[0002] In the structural design of alloy thin-film resistors, in order to achieve a wider range of resistance value design, the thin-film resistor is usually trimmed by notches to achieve fine resistance adjustment. However, after the thin-film resistor is adjusted by notch correction, although the required resistance value is achieved, it brings heat dissipation problems. Specifically, as Figure 1 shown, part of the structure current will flow along the edge of the adjustment notch, and at the same time, the current will gather near the adjustment notch, resulting in serious local heating and affecting the stability and accuracy of the product. Summary of the Invention

[0003] The present invention aims to provide a thin-film resistor structure that can effectively improve the problem of poor heat dissipation caused by the adjustment notch.

[0004] To solve the above technical problems, the present invention provides a thin-film resistor structure, including:

[0005] A body, arranged in a sheet shape;

[0006] Pad sampling points, arranged on the body, including a first pad and a second pad arranged at intervals, and a diversion path communicating the first pad and the second pad is formed on the body;

[0007] An adjustment structure, arranged on the body, the adjustment structure includes an adjustment notch opened on the body, and the adjustment notch is at least partially arranged between the first pad and the second pad, so that the diversion path extends in a bent shape around the adjustment notch; and,

[0008] A diversion structure, including multiple rows of guiding notches, in each row of the guiding notches, a plurality of the guiding notches are distributed at intervals along a first direction, and multiple rows of the guiding notches are arranged side by side in a second direction, wherein the first direction is the same as the extending direction of the diversion path, and the second direction is perpendicular to the first direction.

[0009] Optionally, in each row of the guiding notches, the minimum distance between two adjacent guiding notches in the first direction is D1, and the minimum distance between two adjacent rows of the guiding notches in the second direction is D2, and D1 is less than D2.

[0010] Optionally, each of the guiding notches is arranged in a long shape, and the length direction of each of the guiding notches is parallel to the first direction.

[0011] Optionally, each of the guiding notches is arranged in a rectangular shape, the length dimension of each of the guiding notches is L, and the width dimension is W;

[0012] The ratio of L / W is greater than or equal to 7 and less than or equal to 8; and / or,

[0013] The ratio of D1 / L is greater than or equal to 2.5 and less than or equal to 3.5; and / or,

[0014] The ratio of W / D2 is greater than or equal to 3 and less than or equal to 4.

[0015] Optionally, each of the guiding notches is circularly arranged.

[0016] Optionally, the inner diameter of each of the guiding notches is d, and d is less than 0.7D1.

[0017] Optionally, in each adjacent two rows of the guiding notches in the second direction, the guiding notches in one row are at least partially staggered from the guiding notches in the other row in the second direction.

[0018] Optionally, the flow guiding structure further includes a blocking notch, the blocking notch is arranged around the outer periphery of the flow guiding path, and the length direction thereof is the same as the extending direction of the flow guiding path. A plurality of reinforcing ribs are arranged in the blocking notch, and each of the reinforcing ribs extends along the width direction of the blocking notch, and the plurality of reinforcing ribs are spaced apart along the length direction of the blocking notch.

[0019] Optionally, the resistance adjusting notch includes a first resistance adjusting groove and a second resistance adjusting groove. The first resistance adjusting groove extends in a long shape from the edge of the body towards the inside and penetrates the edge to have an opening facing the outside of the body. There are a plurality of second resistance adjusting grooves, and the plurality of second resistance adjusting grooves are arranged at the end side of the first resistance adjusting groove far from the opening and have a gap with the first resistance adjusting groove, and the plurality of second resistance adjusting grooves are arranged at intervals along the length direction of the first resistance adjusting groove.

[0020] To solve the above technical problems, the present invention further provides a processing method for a thin film resistor structure, and the thin film resistor structure includes:

[0021] A body, arranged in a sheet shape;

[0022] Pad sampling points, arranged on the body, including a first pad and a second pad arranged at intervals, and a flow guiding path communicating the first pad and the second pad is formed on the body;

[0023] A resistance adjusting structure is disposed on the body. The resistance adjusting structure includes a resistance adjusting notch formed on the body. The resistance adjusting notch is at least partially disposed between the first pad and the second pad, so that the diversion path extends in a bent shape around the resistance adjusting notch. The resistance adjusting notch includes a first resistance adjusting groove and a second resistance adjusting groove. The first resistance adjusting groove extends in a long shape from the edge of the body towards the inside and penetrates the edge to have an opening facing the outside of the body. There are multiple second resistance adjusting grooves. The multiple second resistance adjusting grooves are disposed on the end side of the first resistance adjusting groove away from the opening and have a gap with the first resistance adjusting groove. The multiple second resistance adjusting grooves are arranged at intervals along the length direction of the first resistance adjusting groove; and,

[0024] A diversion structure includes a blocking notch and multiple rows of guiding notches. In each row of the guiding notches, multiple guiding notches are distributed at intervals in a first direction. The multiple rows of guiding notches are arranged side by side in a second direction. Herein, the first direction is the same as the extending direction of the diversion path, and the second direction is perpendicular to the first direction. The blocking notch is disposed around the outer periphery of the diversion path, and its length direction is the same as the extending direction of the diversion path. Multiple reinforcing ribs are disposed in the blocking notch. Each reinforcing rib extends along the width direction of the blocking notch, and the multiple reinforcing ribs are distributed at intervals along the length direction of the blocking notch;

[0025] The processing method includes:

[0026] Determine the target resistance value R;

[0027] Mold the body by a mold so that the diversion structure and the resistance adjusting structure are formed on the body. Herein, select the size of the blocking notch according to the target resistance value R so that the resistance value of the thin film resistor structure reaches R1, where R - R1 is greater than or equal to 0.1R;

[0028] Cut the body to connect at least one of the first resistance adjusting groove and the multiple second resistance adjusting grooves so that the resistance value of the thin film resistor structure reaches R2, where R - R2 is greater than or equal to 0.05R;

[0029] Trim the edge of the resistance adjusting notch so that the resistance value of the thin film resistor structure reaches R3, where R - R3 is greater than or equal to -0.01R and less than or equal to 0.01R.

[0030] The technical solution provided by the present invention has the following advantages:

[0031] The thin film resistor structure provided by the present invention includes a main body and a pad sampling point, a resistance adjustment structure and a current guide structure arranged on the main body, wherein the resistance adjustment structure includes a resistance adjustment notch, and the current guide structure includes multiple rows of guide notches, and the guide notches are arranged according to the extension direction of the current guide path, so that the current is more evenly distributed throughout the main body, reducing the current concentration near the resistance adjustment notch, thereby improving the situation of severe local heating near the resistance adjustment notch, and improving the stability and accuracy of the product.

[0032] The processing method of the thin film resistor structure provided by the present invention forms a body by first forming a mold so that a flow guide structure is formed on the body, and the size of the blocking gap is controlled so that the Harima BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0034] Figure 1 It is the thermal distribution diagram of the thin film resistor in the prior art;

[0035] Figure 2 A schematic structural diagram of a first embodiment of a thin film resistor structure provided by the present invention;

[0036] Figure 3 for Figure 2 Thermal distribution diagram of the first embodiment of the thin film resistor structure;

[0037] Figure 4 A schematic structural diagram of a second embodiment of a thin film resistor structure provided by the present invention;

[0038] Figure 5 for Figure 4 Thermal distribution diagram of the second embodiment of the thin film resistor structure;

[0039] Figure 6 It is a schematic structural diagram of a first comparative example of a thin film resistor structure;

[0040] Figure 7 for Figure 6 Thermal distribution diagram of the first comparative example of the thin film resistor structure;

[0041] Figure 8 It is a schematic structural diagram of a second comparative example of a thin film resistor structure;

[0042] Figure 9 for Figure 8 Thermal distribution diagram of the second comparative example of the thin film resistor structure;

[0043] Figure 10 Schematic diagram of the structure of the third comparative example of the thin-film resistor structure;

[0044] Figure 11 is Figure 10 The thermal distribution diagram of the third comparative example of the thin-film resistor structure in

[0045] Description of the reference numerals:

[0046] 100 - Thin-film resistor structure; 10 - Body; 20 - Pad sampling point; 21 - First pad; 22 - Second pad; 30 - Trimming notch; 31 - First trimming groove; 32 - Second trimming groove; 40 - Flow guiding structure; 41 - Guiding notch; 42 - Blocking notch; 421 - Reinforcing rib; 50 - Current path. Detailed implementation manners

[0047] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments. It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other.

[0048] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above accompanying drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence.

[0049] The present invention provides a thin-film resistor structure 100. The thin-film resistor in the prior art is as Figure 1 shown, in which there is a problem that the current tends to flow along the edge of the trimming notch 30 and accumulates near the trimming notch 30, resulting in serious local heating. This uneven current distribution and serious local heating will affect the stability and accuracy of the product.

[0050] Please refer to Figures 2 to 5 , the present invention provides a thin-film resistor structure 100, including a body 10, a pad sampling point 20, a trimming structure, and a flow guiding structure 40. The body 10 is arranged in a sheet shape and is usually made of an alloy resistor material, and is provided with etched voids. The pad sampling point 20 is arranged on the body 10 and includes a first pad 21 and a second pad 22 arranged at intervals. The first pad 21 and the second pad 22 are used to externally connect a functional circuit to supply voltage to the thin-film resistor structure 100 and detect parameters.

[0051] As Figure 2 and 4As shown, a diversion path (indicated by the dotted arrow in the figure) is formed on the body 10 to connect the first pad 21 and the second pad 22. It should be noted that in the present invention, the diversion path is not the actual current flow direction between the first pad 21 and the second pad 22, but the general extension direction of the area on the body 10 through which the current can flow from the first pad 21 to the second pad 22. Its specific shape depends on the relative positions between the first pad 21 and the second pad 22, as well as the setting manner of the resistance adjusting structure therebetween.

[0052] The resistance adjusting structure is provided on the body 10. The resistance adjusting structure is an etching gap formed on the body 10, so that the resistance value of the thin film resistor structure 100 can be adjusted by etching the body 10. The forming process of the etching gap is not limited. For example, it can be processed by die forming and / or laser cutting.

[0053] Further, please refer to Figure 2 and Figure 4 , the resistance adjusting structure includes a resistance adjusting notch 30 opened on the body 10. The resistance adjusting notch 30 is at least partially disposed between the first pad 21 and the second pad 22. It can extend linearly or in a bent shape, so as to adjust the resistance value by changing the current flow direction. In this embodiment, the resistance adjusting notch 30 makes the diversion path extend in a bent shape around the resistance adjusting notch 30. It can be understood that when the resistance adjusting notch 30 is as Figure 2 and 4 shown, and extends substantially linearly, the diversion path correspondingly extends substantially in a C shape. When the resistance adjusting notch 30 extends substantially in a bent shape, the diversion path also correspondingly extends substantially in a snake shape.

[0054] The diversion structure 40 includes multiple rows of guiding notches 41, and the guiding notches 41 mainly play a role in dispersing and guiding the current. Specifically, as Figure 2 and 4 shown, in each row of the guiding notches 41, multiple guiding notches 41 are spaced apart along the first direction, and multiple rows of guiding notches 41 are arranged side by side in the second direction, wherein the first direction is the same as the extension direction of the diversion path, and the second direction is perpendicular to the first direction. Please combine Figure 1 , Figure 3 and Figure 5, the arrangement of the guiding notch 41 divides the current flowing through the current path 50 into multiple regions with directivity, causing the current to tend to flow away from the trimming notch 30 under its guidance, so that the current is more evenly distributed throughout the body 10, reducing the situation where the current accumulates near the trimming notch 30, thereby improving the severe local heating near the trimming notch 30. It can be seen from the comparison of the thermal distribution diagrams that the setting of the guiding notch 41 significantly improves the local heating near the trimming notch 30, and the overall temperature rise is also effectively reduced, thereby improving the stability and accuracy of the thin-film resistor structure 100 product.

[0055] It can be understood that in order to clarify the guiding direction of the guiding notch 41 for the current, as Figure 2 and 4 shown, among the guiding notches 41 in each row, the minimum distance between two adjacent guiding notches 41 in the first direction is D1, and the minimum distance between two adjacent rows of guiding notches 41 in the second direction is D2, and D1 is less than D2. In this way, the current flowing through the diversion path is more inclined to flow along the extension direction of the diversion path rather than towards the trimming notch 30. Thus, the situation where the current accumulates near the trimming notch 30 is more effectively reduced.

[0056] In the preferred first embodiment, please refer to Figure 2 and Figure 3 , each guiding notch 41 is arranged in a long shape, and the length direction of each guiding notch 41 is parallel to the first direction. With this setting, there are advantages such as clear diversion direction and easy processing.

[0057] It should be noted that in this embodiment, the guiding notch 41 should not be set in an overly narrow and long shape. For example, as shown in the first comparative example shown in Figure 7 and 8 , the overly narrow and long guiding notch 41 is instead prone to causing the current to accumulate between two adjacent rows of guiding notches 41 in the second direction, and significantly reduces the current flow area, thus failing to achieve a good current equalization and temperature reduction effect.

[0058] Therefore, in the preferred embodiment, as Figure 2 shown, each guiding notch 41 is arranged in a rectangular shape, the length dimension of each guiding notch 41 is L, the width dimension is W, L / W is greater than or equal to 7 and less than or equal to 8. In this embodiment, the ratio of the guiding notch 41 is controlled within a suitable dimension range, so that while its current equalization effect is significant, it ensures the current flow area, thereby achieving a better heat dissipation and temperature reduction effect.

[0059] In an alternative embodiment, D1 / L is greater than or equal to 2.5 and less than or equal to 3.5. In this way, a certain current flow area in the second direction is ensured, enabling the current to flow towards the outer periphery of the body 10, achieving a better current equalization effect.

[0060] In the second comparative example, as Figure 8 and 9 shown, when the width dimension of each guiding notch 41 is too large, the electromagnetic induction intersection part increases when the current passes through, resulting in more serious heat generation than that of the conventional notchless structure. Therefore, in an alternative embodiment, W / D2 is greater than or equal to 3 and less than or equal to 4. In this way, the current flow area in the first direction is ensured, playing a role in guiding the overall current along the extending direction of the diversion path, and at the same time avoiding the increase in the electromagnetic induction intersection part and the resulting increase in heat generation.

[0061] In the second embodiment provided by the present invention, please refer to Figure 4 and Figure 5 , each of the guiding notches 41 is circularly arranged. In this way, the guiding notch 41 can provide a larger heat dissipation area, thereby enhancing the heat dissipation effect. However, compared with the first embodiment, there are disadvantages of difficult processing technology and increased cost.

[0062] In this embodiment, the inner diameter of each of the guiding notches 41 is d, and d is less than 0.7D1. In this way, while achieving a good current equalization and cooling effect, the situation of the increase in the electromagnetic induction intersection part and the resulting increase in heat generation is avoided.

[0063] In the third comparative example, as Figure 10 and 11 shown, when multiple rows of guiding notches 41 are aligned in the second direction, the current directions are chaotic. When measuring the resistance value with an actual ammeter, the resistance value fluctuates and cannot reflect the true resistance value. Therefore, preferably, please refer to Figure 2 and Figure 4 , in each adjacent two rows of the guiding notches 41 in the second direction, each of the guiding notches 41 in one row is at least partially staggeredly distributed with respect to each of the guiding notches 41 in the other row in the second direction. In this way, the thin film resistor structure 100 product is made more stable and has better reliability.

[0064] In a preferred embodiment, please refer to Figure 2 and Figure 4, the diversion structure 40 further includes a blocking notch 42 which is arranged around the outer periphery of the diversion path, and the length direction thereof is the same as the extending direction of the diversion path. In this embodiment, the blocking notch 42 functions to block the current from flowing to the outer periphery of the body 10, and its setting and distribution can control the approximate distribution range of the diversion path. Thus, by processing the blocking notch 42, the adjustment of a wider resistance value range can be achieved in the thin film resistor structure 100 with the same area, thereby enhancing the versatility of the product and saving the mold cost.

[0065] Preferably, a plurality of reinforcing ribs 421 are arranged in the blocking notch 42. Each of the reinforcing ribs 421 extends along the width direction of the blocking notch 42, and the plurality of reinforcing ribs 421 are spaced apart along the length direction of the blocking notch 42. It can be understood that the reinforcing ribs 421 function to prevent the blocking notch 42 from being set too large, which may have an adverse impact on the mechanical properties of the body 10. The reinforcing ribs 421 are preferably integrally provided with the body 10, but their dimensions are smaller than those of the blocking notch 42, and basically no current flows through their interiors.

[0066] Furthermore, as Figure 2 and Figure 4 shown, the trimming notch 30 includes a first trimming groove 31 and a second trimming groove 32. The first trimming groove 31 extends in a long shape from the edge of the body 10 towards the inside and penetrates the edge to have an opening facing the outside of the body 10. A plurality of second trimming grooves 32 are provided. The plurality of second trimming grooves 32 are arranged on the end side of the first trimming groove 31 away from the opening, and there is a gap between the plurality of second trimming grooves 32 and the first trimming groove 31. The plurality of second trimming grooves 32 are arranged at intervals along the length direction of the first trimming groove 31. In this embodiment, the corresponding setting of the first trimming groove 31 and the second trimming groove 32 functions to improve the trimming efficiency. Specifically, during the trimming process, the part between the first trimming groove 31 and the second trimming groove 32 can be cut first according to the preset target resistance value to make them communicate, so as to achieve a rough trimming effect and make the actual resistance value of the product close to the target resistance value. Then, the first trimming groove 31 and / or the second trimming groove 32 are further cut and processed to play a fine trimming role, so that the actual resistance value of the product reaches the target resistance value.

[0067] Based on the thin film resistor structure 100 provided in the above embodiment, the present invention further provides a processing method for the thin film resistor structure 100. Specifically, the processing method includes the following steps:

[0068] Step S1, determining the target resistance value R;

[0069] In this step, the target resistance value R is the designed resistance value required in the application scenario of the thin film resistor structure 100.

[0070] Step S2, the mold forms the body 10, such that the diversion structure 40 and the resistance adjusting structure are formed on the body 10. Wherein, the size of the blocking notch 42 is selected according to the target resistance value R, so that the resistance value of the thin film resistor structure 100 reaches R1, where R - R1 is greater than or equal to 0.1R;

[0071] In this step, the body 10 and the diversion structure 40 and the resistance adjusting structure provided thereon are formed by means of mold forming. The size of the blocking notch 42 in the diversion structure 40 is selected such that a wider range of resistance value adjustment can be achieved in the thin film resistor structure 100 of the same area, thereby enhancing the versatility of the product and saving mold costs. It can be understood that when the target resistance value R is small, the width dimension of the blocking notch 42 is larger, and when the target resistance value R is large, the width dimension of the blocking notch 42 is correspondingly smaller.

[0072] Preferably, a plurality of reinforcing ribs 421 are provided in the blocking notch 42. Each of the reinforcing ribs 421 extends along the width direction of the blocking notch 42, and the plurality of reinforcing ribs 421 are spaced apart along the length direction of the blocking notch 42. The reinforcing ribs 421 are preferably integrally formed with the body 10, so that the processing of the reinforcing ribs 421 can be completed in the mold forming stage. In this step, after the mold forming, after the pad sampling points 20 are installed on the body 10, the thin film resistor structure 100 with a resistance value reaching R1 can be obtained. Subsequently, the resistance adjusting structure can be further processed according to the result of its resistance detection, so as to obtain a product with the target resistance value R.

[0073] Step S3, cut the body 10 to connect at least one of the first resistance adjusting grooves 31 and the plurality of second resistance adjusting grooves 32, so that the resistance value of the thin film resistor structure 100 reaches R2, where R - R2 is greater than or equal to 0.05R;

[0074] In this step, the shape of the current path is adjusted by connecting the first resistance adjusting groove 31 and the second resistance adjusting groove 32, so as to achieve the purpose of roughly adjusting the resistance value of the thin film resistor structure 100 and making its actual resistance value closer to the target resistance value R.

[0075] Step S4, trim the edge of the resistance adjusting notch 30, so that the resistance value of the thin film resistor structure 100 reaches R3, where R - R3 is greater than or equal to -0.01R and less than or equal to 0.01R.

[0076] In this step, by trimming the edges of the first resistance adjusting groove 31 and the second resistance adjusting groove 32, the resistance value of the thin film resistor structure 100 is further adjusted to achieve the purpose of precisely adjusting its resistance value, and finally a product with the target resistance value R is obtained. In this embodiment, by the rough adjustment and fine adjustment processing of the body 10, the resistance adjusting efficiency is improved, and at the same time, the resistance value accuracy of the product is ensured.

[0077] Obviously, the embodiments described above are only a part of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, those of ordinary skill in the art can make other different forms of changes or modifications without creative efforts, and all of them should fall within the scope of protection of the present invention.

Claims

1. A thin film resistor structure, characterized in that: include: The body is arranged in a sheet shape; A pad sampling point is arranged on the body, comprising a first pad and a second pad arranged at an interval, and a flow guide path connecting the first pad and the second pad is formed on the body; a resistance-adjusting structure, disposed on the body, the resistance-adjusting structure comprising a resistance-adjusting notch opened on the body, the resistance-adjusting notch being at least partially disposed between the first pad and the second pad, so that the flow-guiding path is extended in a bent shape around the resistance-adjusting notch; and A flow guiding structure, comprising a plurality of rows of guide slots, wherein in each row of the guide slots, a plurality of the guide slots are spaced apart along a first direction, and the plurality of the guide slots are arranged side by side in a second direction, wherein the first direction is the same as the extension direction of the flow guiding path, and the second direction is perpendicular to the first direction, and in each row of the guide slots, a minimum spacing between two adjacent guide slots in the first direction is D1, and a minimum spacing between two adjacent rows of the guide slots in the second direction is D2, and D1 is smaller than D2; Among them, the guide structure also includes a blocking gap, which is arranged around the outer circumference of the guide path, and its length direction is the same as the extension direction of the guide path. A plurality of reinforcing ribs are arranged in the blocking gap, each of which extends along the width direction of the blocking gap, and a plurality of the reinforcing ribs are spaced apart along the length direction of the blocking gap.

2. The thin film resistor structure according to claim 1, characterized in that: Each of the guide slots is elongated, and the length direction of each of the guide slots is parallel to the first direction.

3. The thin film resistor structure according to claim 2, characterized in that: Each of the guide slots is arranged in a rectangular shape, and the length dimension of each of the guide slots is L, and the width dimension of each of the guide slots is W; L / W is greater than or equal to 7 and less than or equal to 8; and / or, D1 / L is greater than or equal to 2.5 and less than or equal to 3.5; and / or, W / D2 is greater than or equal to 3 and less than or equal to 4.

4. The thin film resistor structure according to claim 1, characterized in that: Each of the guide notches is arranged in a circular shape.

5. The thin film resistor structure according to claim 4, characterized in that: The inner diameter of each guide slot is d, and d is less than 0.7D1.

6. The thin film resistor structure according to any one of claims 2 to 5, characterized in that: In every two adjacent rows of the guide slots in the second direction, the guide slots in one row and the guide slots in the other row are at least partially staggered in the second direction.

7. The thin film resistor structure according to any one of claims 2 to 5, characterized in that: The resistance tuning notch includes a first resistance tuning groove and a second resistance tuning groove, the first resistance tuning groove extends inward in an elongated shape from the edge of the main body, and passes through the edge to have an opening facing the outside of the main body, and a plurality of second resistance tuning grooves are provided, and a plurality of the second resistance tuning grooves are arranged on the end side of the first resistance tuning groove away from the opening, and have a gap between the first resistance tuning groove, and the plurality of the second resistance tuning grooves are arranged at intervals along the length direction of the first resistance tuning groove.

8. A method for processing a thin film resistor structure, characterized in that: The thin film resistor structure comprises: The body is arranged in a sheet shape; A pad sampling point is arranged on the body, comprising a first pad and a second pad arranged at an interval, and a flow guide path connecting the first pad and the second pad is formed on the body; A resistance trimming structure is arranged on the body, the resistance trimming structure includes a resistance trimming notch opened on the body, the resistance trimming notch is at least partially arranged between the first pad and the second pad, so that the guide path is extended in a bent shape around the resistance trimming notch, the resistance trimming notch includes a first resistance trimming groove and a second resistance trimming groove, the first resistance trimming groove extends inwardly from the edge of the body in an elongated shape, and passes through the edge to have an opening facing the outside of the body, a plurality of second resistance trimming grooves are provided, a plurality of the second resistance trimming grooves are arranged on the end side of the first resistance trimming groove away from the opening, and have a gap between the first resistance trimming groove and the first resistance trimming groove, and the plurality of the second resistance trimming grooves are arranged at intervals along the length direction of the first resistance trimming groove; and, A flow guiding structure, comprising a blocking gap and a plurality of rows of guide slots, wherein in each row of the guide slots, a plurality of the guide slots are spaced apart along a first direction, and a plurality of the guide slots are arranged side by side in a second direction, wherein the first direction is the same as the extension direction of the flow guiding path, and the second direction is perpendicular to the first direction, the blocking gap is arranged around the periphery of the flow guiding path, and its length direction is the same as the extension direction of the flow guiding path, a plurality of reinforcing ribs are arranged in the blocking gap, each of the reinforcing ribs extends along the width direction of the blocking gap, and a plurality of the reinforcing ribs are spaced apart along the length direction of the blocking gap; The processing method comprises: Determine the target resistance R; The body is molded by a mold so that the flow guiding structure and the resistance adjusting structure are formed on the body, wherein the size of the blocking gap is selected according to the target resistance value R so that the resistance value of the thin film resistor structure reaches R1, wherein R-R1 is greater than or equal to 0.1R; Cutting the body, connecting the first resistance-adjusting groove and at least one of the plurality of second resistance-adjusting grooves, so that the resistance value of the thin-film resistor structure reaches R2, wherein R-R2 is greater than or equal to 0.05R; The edge of the resistance adjustment gap is trimmed so that the resistance value of the thin film resistor structure reaches R3, wherein R-R3 is greater than or equal to -0.01R and less than or equal to 0.01R.

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