Bonding method for electronic components and method for mass transfer of electronic components

Abstract

The invention discloses a bonding method of an electronic component, which comprises the following steps of: providing a target substrate with a first upper surface and a first lower surface which are opposite to each other, and the first upper surface comprises a bonding area with at least one welding pad; the electronic component comprises an electronic component body and at least one electrode electronic component, the electronic component body is provided with a second upper surface and a second lower surface which are opposite to each other, and the at least one electrode is formed on the second lower surface of the electronic component body and electrically connected with the electronic component body; wherein the electronic component is aligned with the bonding region of the target substrate, and the at least one electrode is aligned with at least one bonding pad in the bonding region; and providing a pulsed laser, so that the electronic component is welded on the at least one welding pad of the bonding area of the target substrate by the pulsed laser through the at least one electrode.

Description

Technical Field

[0001] The invention relates to a method for joining electronic components and a method for mass transferring electronic components. Background Art

[0002] Light-emitting diodes have the advantages of active light emission, high brightness, and energy saving. Therefore, they have been widely used in technical fields such as lighting, display, and projector, and micro-LED display has gradually become a new generation of display technology. However, a high-density (FHD) display has 1920 rows x 1080 columns, about 2 million pixels, and each pixel is further divided into three sub-pixels (Sub pixel) of red, green, and blue. Therefore, a high-density light-emitting diode display (FHD LED Display) has a total of about 6 million LED dies. To cut and paste these 6 million dies on the substrate of the display panel, the key technology lies in how to accurately transfer a certain amount of micro-LEDs to the substrate of the display panel and fix them together.

[0003] Conventional electronic component bonding methods mainly utilize reflow soldering, where electronic components are soldered to a target substrate after the solder paste is heated and reflowed. However, the disadvantages of reflow soldering are that during the reflow process, uneven heating may cause electronic components to drift, too much solder paste may cause electronic components to short-circuit, too little solder paste may cause empty soldering, or too low a reflow temperature may cause cold soldering.

[0004] In addition, conventional methods for mass transferring electronic components mainly include electrostatic transfer, magnetic transfer, micro-transfer printing, and fluid assembly, etc. However, the transfer rate and yield of these methods for mass transferring electronic components still need to be further improved.

[0005] Although the description of the Taiwan invention patent application No. TW112112737 of the applicant of this case has disclosed a novel electronic component joining method and a method of mass transferring electronic components using laser welding to improve the shortcomings of the conventional electronic component joining method and the conventional method of mass transferring electronic components, due to the use of a constant power laser, the high temperature generated during laser welding lasts for a long time, which will damage the electronic component and the target substrate to which it is joined, resulting in a reduction in production yield. In view of this, a novel electronic component joining method and a method of mass transferring electronic components that can not damage the electronic component and the target substrate to which it is joined are eagerly anticipated by the industry. Summary of the invention

[0006] The present invention discloses a method for joining electronic components, which includes the following steps: providing a target substrate, wherein the target substrate has a first upper surface and a first lower surface relative to each other, and the first upper surface includes a joining area, and the joining area includes at least one welding pad; providing an electronic component, wherein the electronic component includes an electronic component body and at least one electrode, wherein the electronic component body has a second upper surface and a second lower surface relative to each other, and the at least one electrode is formed on the second lower surface of the electronic component body and is electrically connected to the electronic component body, wherein the electronic component is aligned with the joining area of ​​the target substrate, and the at least one electrode is aligned with at least one welding pad in the joining area; and providing a pulsed laser, and the electronic component is welded on at least one welding pad in the joining area of ​​the target substrate by the pulsed laser through the at least one electrode.

[0007] In the aforementioned method for bonding electronic components, the aforementioned target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0008] The aforementioned method for joining electronic components, wherein the aforementioned flexible printed circuit board comprises: a flexible insulating substrate; a circuit formed on the surface of the aforementioned flexible insulating substrate; and an insulating layer covering the aforementioned circuit; wherein the aforementioned solder pad is formed on the surface of the aforementioned insulating layer and is electrically connected to the aforementioned circuit.

[0009] In the aforementioned method for bonding electronic components, the electronic components are selected from a group consisting of light emitting diodes, laser diodes and semiconductor components.

[0010] In the aforementioned method for bonding electronic components, the light emitted by the aforementioned light emitting diode is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

[0011] In the aforementioned method for bonding electronic components, the wavelength of the aforementioned laser diode is between 390 nanometers and 1700 nanometers.

[0012] In the aforementioned method for bonding electronic components, the aforementioned semiconductor component is selected from a group consisting of a processor, a memory integrated circuit, a microcomponent integrated circuit, a logic integrated circuit and an analog integrated circuit.

[0013] In the aforementioned method for bonding electronic components, the material of the aforementioned at least one electrode and / or the aforementioned at least one welding pad is metal, metal alloy or metal oxide respectively.

[0014] The aforementioned method for joining electronic components further includes the step of forming a solder on the aforementioned at least one soldering pad and / or the aforementioned at least one electrode, so that the at least one electrode of the aforementioned electronic component is indirectly in contact with the at least one electrode of the aforementioned target substrate through the aforementioned solder, and the aforementioned solder is directly or indirectly heated by the aforementioned pulsed laser to obtain a heated solder, thereby allowing the at least one electrode of the aforementioned electronic component to be joined to the at least one soldering pad of the joining area of ​​the aforementioned target substrate through the aforementioned heated solder.

[0015] The aforementioned method for joining electronic components, wherein the aforementioned pulsed laser is generated by a pulsed laser source, and the aforementioned pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source.

[0016] In the aforementioned method for bonding electronic components, the frequency of the aforementioned pulsed laser is between 1 Hz and 1000 GHz, and the pulse width of the aforementioned pulsed laser is between 0.1 femtoseconds and 0.9 seconds.

[0017] In the aforementioned method for joining electronic components, the wavelength of the aforementioned pulsed laser is between 190 nanometers and 11000 nanometers.

[0018] The aforementioned method for joining electronic components further includes the step of setting a transparent or semi-transparent medium layer on the second upper surface of the aforementioned electronic component body, wherein the aforementioned pulsed laser is irradiated toward the aforementioned electronic component body from above the aforementioned electronic component through the aforementioned transparent or semi-transparent medium layer.

[0019] The aforementioned method for joining electronic components further includes the step of disposing a transparent or semi-transparent medium layer on the first lower surface of the target substrate, wherein the aforementioned pulsed laser is irradiated toward the aforementioned target substrate from below the aforementioned target substrate through the aforementioned transparent or semi-transparent medium layer.

[0020] The present invention discloses a method for mass transfer of electronic components, which comprises the following steps: providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface including a plurality of bonding areas, and each of the bonding areas including at least one welding pad; providing a temporary substrate above the target substrate, the temporary substrate having a plurality of electronic components formed thereon, each of the electronic components including an electronic component body and at least one electrode, the electronic component body having a second upper surface and a second lower surface opposite to each other, the at least one electrode formed on the second lower surface of the electronic component body and electrically connected to the electronic component body, wherein the second lower surface of the electronic component body faces the first upper surface of the target substrate, and each of the electronic components is respectively aligned with each of the bonding areas of the target substrate, and at least one electrode of each of the electronic components is aligned with at least one welding pad of each of the bonding areas; and providing a pulsed laser, and each of the electronic components is welded on at least one welding pad of each of the bonding areas of the target substrate by the pulsed laser through the at least one electrode.

[0021] In the aforementioned method for mass transferring electronic components, the aforementioned target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0022] The aforementioned method for mass transferring electronic components, wherein the aforementioned flexible printed circuit board comprises: a flexible insulating substrate; a circuit formed on the surface of the aforementioned flexible insulating substrate; and an insulating layer covering the aforementioned circuit; wherein the aforementioned solder pad is formed on the surface of the aforementioned insulating layer and is electrically connected to the aforementioned circuit.

[0023] In the aforementioned method for mass transferring electronic components, the aforementioned electronic components are selected from one or more groups consisting of light emitting diodes, laser diodes and semiconductor components.

[0024] In the aforementioned method for mass transfer of electronic components, the light emitted by the aforementioned light emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

[0025] In the aforementioned method for mass transferring electronic components, the wavelength of the aforementioned laser diode is between 390 nanometers and 1700 nanometers.

[0026] The aforementioned method for mass transfer of electronic components, wherein the aforementioned semiconductor components are selected from one or more groups consisting of processors, memory integrated circuits, micro-component integrated circuits, logic integrated circuits and analog integrated circuits.

[0027] In the aforementioned method for mass transferring electronic components, the material of at least one electrode of each of the aforementioned electronic components and / or at least one pad of each of the aforementioned bonding areas is metal, metal alloy or metal oxide.

[0028] The aforementioned method for mass transfer of electronic components further includes the step of forming a solder on at least one soldering pad of each of the aforementioned bonding areas of the aforementioned target substrate and / or on at least one electrode of each of the aforementioned bonding areas of the aforementioned target substrate, so that at least one electrode of each of the aforementioned bonding areas of the aforementioned target substrate and at least one soldering pad of each of the aforementioned bonding areas of the aforementioned target substrate are indirectly in contact with each other through the aforementioned solder, and the aforementioned solder is directly or indirectly heated by the aforementioned pulsed laser to obtain a heated solder, thereby allowing at least one electrode of each of the aforementioned bonding areas of the aforementioned target substrate to be bonded to at least one soldering pad of each of the aforementioned bonding areas of the aforementioned target substrate through the aforementioned heated solder.

[0029] The aforementioned method for mass transfer of electronic components, wherein the aforementioned pulsed laser is generated by a pulsed laser source, and the aforementioned pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source.

[0030] In the aforementioned method for mass transfer of electronic components, the frequency of the aforementioned pulsed laser is between 1 Hz and 1000 GHz, and the pulse width of the aforementioned pulsed laser is between 0.1 femtoseconds and 0.9 seconds.

[0031] In the aforementioned method for mass transferring electronic components, the wavelength of the aforementioned pulsed laser is between 190 nanometers and 11,000 nanometers.

[0032] The aforementioned method for mass transfer of electronic components, wherein the aforementioned temporary substrate can be removed by being simultaneously photolyzed or thermally decomposed when the aforementioned pulsed laser is irradiated toward the aforementioned temporary substrate from above the aforementioned temporary substrate, or can be directly peeled off and removed after at least one electrode of each of the aforementioned electronic components is respectively bonded to at least one solder pad of each of the aforementioned bonding areas of the aforementioned target substrate.

[0033] The aforementioned method for mass transfer of electronic components further includes the step of setting a transparent or semi-transparent medium layer on the aforementioned temporary substrate, wherein the aforementioned pulsed laser is irradiated from above the aforementioned electronic components toward the aforementioned temporary substrate and each of the aforementioned electronic components through the aforementioned transparent or semi-transparent medium layer.

[0034] The present invention discloses another method for mass transfer of electronic components, which includes the following steps: providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, and the first upper surface including a plurality of bonding areas, and each of the bonding areas including at least one pad; providing a temporary substrate above the target substrate, the temporary substrate having a plurality of electronic components formed thereon, each of the electronic components including an electronic component body and at least one electrode, the electronic component body having a second upper surface and a second lower surface opposite to each other, the at least one electrode formed on the electronic component body The electronic component body is on the second lower surface and is electrically connected to the electronic component body, wherein the second lower surface of the electronic component body faces the first upper surface of the target substrate, and each of the electronic components is respectively aligned with each of the bonding areas of the target substrate, and at least one electrode of each of the electronic components is aligned with at least one welding pad of each of the bonding areas; a first laser is provided, and each of the electronic components is welded on at least one welding pad of each of the bonding areas of the target substrate by the first laser through the at least one electrode, wherein the first laser is a pulsed laser.

[0035] In the aforementioned another method for mass transferring electronic components, the target substrate is a semiconductor target substrate, a ceramic target substrate, a metal target substrate, a glass target substrate, a printed circuit board, or a flexible printed circuit board.

[0036] In the aforementioned method for mass transferring electronic components, the aforementioned flexible printed circuit board comprises: a flexible insulating substrate; a circuit formed on the surface of the aforementioned flexible insulating substrate; and an insulating layer covering the aforementioned circuit; wherein the aforementioned solder pad is formed on the surface of the aforementioned insulating layer and is electrically connected to the aforementioned circuit.

[0037] In the aforementioned method for mass transferring electronic components, the aforementioned electronic components are selected from one or more groups consisting of light emitting diodes, laser diodes and semiconductor components.

[0038] In the aforementioned another method for mass transfer of electronic components, the light emitted by the aforementioned light emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

[0039] In the aforementioned method for mass transferring electronic components, the wavelength of the aforementioned laser diode is between 390 nanometers and 1700 nanometers.

[0040] In the aforementioned method for mass transferring electronic components, the aforementioned semiconductor components are selected from one or more groups consisting of processors, memory integrated circuits, micro-component integrated circuits, logic integrated circuits and analog integrated circuits.

[0041] In the aforementioned another method for mass transferring electronic components, the material of at least one electrode of each of the aforementioned electronic components and / or at least one pad of each of the aforementioned bonding areas is metal, metal alloy or metal oxide.

[0042] The aforementioned another method for mass transfer of electronic components further includes the step of forming a solder on at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate and / or on at least one electrode of each of the aforementioned equal joining areas, so that at least one electrode of each of the aforementioned equal joining areas and at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate are indirectly in contact with each other through the aforementioned solder, and the aforementioned solder is directly or indirectly heated by the aforementioned first laser to obtain a heated solder, thereby allowing at least one electrode of each of the aforementioned equal joining areas of the aforementioned target substrate to be joined to at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate through the aforementioned heated solder.

[0043] Another method for mass transfer of electronic components as mentioned above, wherein the temporary substrate can be irradiated from above by a second laser toward the temporary substrate after each of the aforementioned electronic components is joined to at least one pad of each of the aforementioned joining areas of the aforementioned target substrate by means of the aforementioned at least one electrode, so that the temporary substrate is removed after being photolyzed or pyrolyzed, or the temporary substrate is directly peeled off and removed.

[0044] Another method for mass transfer of electronic components as mentioned above, wherein the first laser is generated by a pulsed laser source, and the pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source.

[0045] In the aforementioned method for mass transfer of electronic components, the frequency of the first laser is between 1 Hz and 1000 GHz, and the pulse width of the first laser is between 0.1 femtoseconds and 0.9 seconds.

[0046] In the aforementioned method for mass transferring electronic components, the wavelength of the first laser is between 190 nanometers and 11,000 nanometers.

[0047] In the aforementioned method for mass transferring electronic components, the wavelength of the second laser is between 190 nanometers and 11,000 nanometers.

[0048] The aforementioned another method for mass transfer of electronic components further includes the step of setting a transparent or semi-transparent medium layer on the first lower surface of the target substrate, wherein the aforementioned first laser is irradiated toward the aforementioned target substrate from below the aforementioned target substrate through the aforementioned transparent or semi-transparent medium layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1A-1B The cross-sectional schematic diagram is an electronic component bonding process disclosed according to the first embodiment of the present invention.

[0050] Figure 2A-2B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the second embodiment of the present invention.

[0051] Figure 3A-3B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the third embodiment of the present invention.

[0052] Figures 4A to 4B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the fourth embodiment of the present invention.

[0053] Figures 5A-5B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the fifth embodiment of the present invention.

[0054] Figures 6A-6B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the sixth embodiment of the present invention.

[0055] Figures 7A-7B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the seventh embodiment of the present invention.

[0056] Figures 8A-8B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the eighth embodiment of the present invention.

[0057] Figures 9A to 9B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed in the ninth embodiment of the present invention.

[0058] Figures 10A to 10B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed according to the tenth embodiment of the present invention.

[0059] Figures 11A to 11B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed according to the eleventh embodiment of the present invention.

[0060] Figures 12A to 12B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed according to the twelfth embodiment of the present invention.

[0061] Figures 13A to 13BThe cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed according to the thirteenth embodiment of the present invention.

[0062] Figures 14A to 14B The cross-sectional schematic diagram is a schematic diagram of an electronic component bonding process disclosed according to a fourteenth embodiment of the present invention.

[0063] Figures 15A to 15B The cross-sectional schematic diagram is a schematic diagram of the electronic component bonding process disclosed according to the fifteenth embodiment of the present invention.

[0064] Figures 16A to 16B The cross-sectional schematic diagram is a schematic diagram of an electronic component bonding process disclosed according to the sixteenth embodiment of the present invention.

[0065] Figures 17A to 17B The cross-sectional schematic diagram is a schematic diagram of an electronic component bonding process disclosed according to the seventeenth embodiment of the present invention.

[0066] Figures 18A to 18C The cross-sectional schematic diagram is a mass transfer electronic component manufacturing process disclosed according to the eighteenth embodiment of the present invention.

[0067] Figures 19A to 19C The cross-sectional schematic diagram is a mass transfer electronic component manufacturing process disclosed according to the nineteenth embodiment of the present invention.

[0068] Figures 20A to 20D The cross-sectional schematic diagram is a mass transfer electronic component manufacturing process disclosed according to the twentyth embodiment of the present invention.

[0069] Figures 21A to 21D The cross-sectional schematic diagram is a mass transfer electronic component manufacturing process disclosed according to embodiment 21 of the present invention.

[0070] Among them, the simple description of the symbols in the accompanying drawings is as follows:

[0071] 100 Target substrate

[0072] 100A First upper surface

[0073] 100B First lower surface

[0074] 110 Junction area

[0075] 120 Solder pad

[0076] 200 Electronic components

[0077] 210 Electronic components

[0078] 210A Second upper surface

[0079] 210B Second lower surface

[0080] 220 Electrode

[0081] 150, 250 thermal conductive material

[0082] 300 Solder

[0083] 300' Heated solder

[0084] 400 Transparent or semi-transparent dielectric layer

[0085] 500 Temporary substrate DETAILED DESCRIPTION

[0086] In order to make the description of the disclosed content of the present invention more detailed and complete, the following is an illustrative description of the implementation and specific embodiments of the present invention; however, this is not the only form of implementing or using the specific embodiments of the present invention. The various embodiments disclosed below can be combined or replaced with each other under beneficial circumstances, and other embodiments can be added to one embodiment without further recording or explanation.

[0087] In the following description, many specific details will be described in detail to enable the reader to fully understand the following embodiments. However, embodiments of the present invention can be practiced without these specific details. In other cases, well-known structures and devices are only schematically depicted in the figures to simplify the drawings.

[0088] Example

[0089] Embodiment 1

[0090] First, see Figure 1A .like Figure 1A As shown, a target substrate 100 and an electronic component 200 are provided. The target substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other, and the first upper surface 100A includes a bonding area 110, and the bonding area includes at least one pad 120. The electronic component 200 includes an electronic component body 210 and at least one electrode 220, the electronic component body 210 has a second upper surface 210A and a second lower surface 210B opposite to each other, the at least one electrode 220 is formed on the second lower surface 210B of the electronic component body 210 and is electrically connected to the electronic component body 210, wherein the electronic component 200 is aligned with the bonding area 110 of the target substrate 100, and the at least one electrode 220 is aligned with the at least one pad 120 in the bonding area 110.

[0091] According to the present embodiment, the target substrate 100 may be, for example but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0092] According to the present embodiment, the target substrate 100 is illustrated as a flexible printed circuit board, and the flexible printed circuit board may include a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit, wherein the solder pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

[0093] According to this embodiment, the electronic component 200 is, for example, but not limited to, a light emitting diode, a laser diode, or a semiconductor component, wherein the light emitted by the light emitting diode is, for example, but not limited to, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diode is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the semiconductor component is, for example, but not limited to, a processor, a memory integrated circuit, a micro-component integrated circuit, a logic integrated circuit, or an analog integrated circuit. The electronic component 200 of the first embodiment is illustrated by taking a light emitting diode as an example.

[0094] According to the present embodiment, the material of the at least one electrode 220 and / or the at least one bonding pad 120 may be, for example but not limited to, metal, metal alloy or metal oxide.

[0095] Next, see Figure 1B .like Figure 1B As shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm. The pulsed laser irradiates the electronic component body 210 from above the electronic component 200, so that the pulsed laser can be concentrated on the second upper surface 210A of the electronic component body 210, the inside of the electronic component body 210, the second lower surface 210B of the electronic component body 210, the at least one electrode 220 or the at least one welding pad 120, and a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0096] The pulsed laser of the first embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0097] Embodiment 2

[0098] First, see Figure 2A .like Figure 2A As shown, a target substrate 100 and an electronic component 200 are provided. The structures of the target substrate 100 and the electronic component 200 are the same as those described in the first embodiment, and are not described again.

[0099] Next, see Figure 2B .like Figure 2B As shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm. The pulsed laser is irradiated toward the target substrate 100 from the bottom of the target substrate 100, so that the pulsed laser can be concentrated on the first upper surface 100A of the target substrate 100, the inside of the target substrate 100, the first lower surface 100B of the target substrate 100, the at least one welding pad 120 or the at least one electrode 220, and a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0100] The pulsed laser of the second embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0101] Embodiment 3

[0102] First, see Figure 3A .like Figure 3A As shown, a target substrate 100 and an electronic component 200 are provided, and the structures of the target substrate 100 and the electronic component 200 are the same as those described in the first embodiment, and are not described in detail herein. Figure 3A As shown, a solder 300 is further formed on the at least one pad 120 and / or the at least one electrode 220 , so that the at least one electrode 220 of the electronic component 200 and the at least one pad 120 of the target substrate 100 are indirectly contacted through the solder 300 .

[0103] Next, see Figure 3B .like Figure 3BAs shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm. The pulsed laser irradiates the electronic component body 210 from above the electronic component 200, so that the pulsed laser can be concentrated on the second upper surface 210A of the electronic component body 210, the inside of the electronic component body 210, the second lower surface 210B of the electronic component body 210, the at least one electrode 220, the solder 300 or the at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0104] The pulsed laser of the third embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0105] Embodiment 4

[0106] First, see Figure 4A .like Figure 4A As shown, a target substrate 100 and an electronic component 200 are provided, and the structures of the target substrate 100 and the electronic component 200 are the same as those described in the first embodiment, and are not described in detail herein. Figure 4A As shown, a solder 300 is further formed on the at least one pad 120 and / or the at least one electrode 220 , so that the at least one electrode 220 of the electronic component 200 and the at least one pad 120 of the target substrate 100 are indirectly contacted through the solder 300 .

[0107] Next, see Figure 4B .like Figure 4BAs shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm. The pulsed laser is irradiated toward the target substrate 100 from the bottom of the target substrate 100, so that the pulsed laser can be concentrated on the first upper surface 100A of the target substrate 100, the inside of the target substrate 100, the first lower surface 100B of the target substrate 100, the at least one pad 120, the solder 300 or the at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0108] The pulsed laser of the fourth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0109] Embodiment 5

[0110] See also Figures 5A-5B The electronic component bonding process disclosed in the fifth embodiment is generally similar to that disclosed in the first embodiment, and the only difference is that the fifth embodiment further includes disposing a transparent or semi-transparent medium layer 400 on the second upper surface 210A of the electronic component body 210, so that the pulsed laser irradiates the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent medium layer 400, and the pulsed laser can be concentrated on the second upper surface 210A of the electronic component body 210, the A eutectic layer (not shown) is generated inside the subcomponent body 210, the second lower surface 210B of the electronic component body 210, the at least one electrode 220 or the at least one welding pad 120, and between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0111] The pulsed laser of the fifth embodiment can be generated by a pulsed laser source, which can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0112] Embodiment 6

[0113] See also Figures 6A-6B . The electronic component bonding process disclosed in the sixth embodiment is substantially similar to that disclosed in the second embodiment, and the only difference is that the sixth embodiment further includes the step of disposing a transparent or semi-transparent medium layer 400 on the first lower surface 100B of the target substrate 100, wherein the pulsed laser is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent medium layer 400, so that the pulsed laser can be concentrated on the first upper surface 100A of the target substrate 100, the inside of the target substrate 100, the first lower surface 100B of the target substrate 100, the at least one welding pad 120 or the at least one electrode 220, and a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0114] The pulsed laser of the sixth embodiment can be generated by a pulsed laser source, which can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0115] Embodiment 7

[0116] See also Figures 7A-7B. The electronic component bonding process disclosed in the seventh embodiment is generally similar to that disclosed in the third embodiment, and the only difference is that the seventh embodiment further includes disposing a transparent or semi-transparent medium layer 400 on the second upper surface 210A of the electronic component body 210, so that the pulsed laser irradiates the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent medium layer 400, and the pulsed laser can be concentrated on the second upper surface 210A of the electronic component body 210, the inside of the electronic component body 210, the second lower surface 210B of the electronic component body 210, the solder 300, the at least one electrode 220 or the at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0117] The pulsed laser of the seventh embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0118] Embodiment 8

[0119] See also Figures 8A-8B The electronic component bonding process disclosed in the eighth embodiment is substantially similar to that disclosed in the fourth embodiment, and the only difference is that the eighth embodiment further includes the step of disposing a transparent or semi-transparent medium layer 400 on the first lower surface 100B of the target substrate 100, wherein the pulsed laser is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent medium layer 400, so that the pulsed laser can be concentrated on the first upper surface 100A of the target substrate 100, the inside of the target substrate 100, the first lower surface 100B of the target substrate 100, the at least one bonding pad 120, the solder 300 or the at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one bonding pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0120] The pulsed laser of the eighth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0121] Embodiment 9

[0122] First, see Fig. 9A .like Fig. 9A As shown, a target substrate 100, an electronic component 200 and a solder 300 are provided. The structures of the target substrate 100, the electronic component 200 and the solder are the same as those described in the third embodiment, and are not described again.

[0123] Next, see Fig. 9B .like Fig. 9B As shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm, so that the pulsed laser directly irradiates the solder 300 from the side, and the solder 300 is directly heated by the pulsed laser to obtain a heated solder 300', thereby allowing at least one electrode 220 of the electronic component 200 to be bonded to at least one pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0124] The pulsed laser of the ninth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0125] Embodiment 10

[0126] First, see Fig. 10A .like Fig. 10AAs shown, a target substrate 100 and an electronic component 200 are provided. The structure of the target substrate 100 is the same as that of the first embodiment, and will not be repeated here. The structure of the electronic component 200 is substantially similar to that of the first embodiment, but the electronic component body 210 of the tenth embodiment further has a through hole (not marked) penetrating the second upper surface 210A and the second lower surface 210B, and the through hole (not marked) is filled with a heat conductive material 250, and the heat conductive material 250 is connected to at least one electrode 220 of the electronic component 200. The electronic component 200 is also aligned with the bonding area 110 of the target substrate 100, and the at least one electrode 220 is aligned with at least one pad 120 in the bonding area 110.

[0127] Next, see Fig. 10B .like Fig. 10B As shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm. The pulsed laser irradiates the electronic component body 210 from above the electronic component 200, so that the pulsed laser can be concentrated on the upper surface (not marked) of the thermal conductive material 250, inside the thermal conductive material 250, the lower surface (not marked) of the thermal conductive material 250, the at least one electrode 220 or the at least one welding pad 120, and a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0128] The pulsed laser of the tenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0129] Embodiment 11

[0130] First, see Fig.11A .like Fig.11AAs shown, a target substrate 100 and an electronic component 200 are provided. The structure of the electronic component 200 is the same as that of the first embodiment, and will not be described again. The structure of the target substrate 100 is substantially similar to that of the first embodiment, but the target substrate 100 of the eleventh embodiment further has a through hole (not marked) penetrating the first upper surface 100A and the first lower surface 100B, and the through hole (not marked) is filled with a heat conductive material 150, and the heat conductive material 150 is connected to at least one pad 120 in the bonding area 110 of the target substrate 100. The electronic component 200 is also aligned with the bonding area 110 of the target substrate 100, and the at least one electrode 220 is aligned with at least one pad 120 in the bonding area 110.

[0131] Next, see Fig. 11B .like Fig. 11B As shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm. The pulsed laser irradiates the target substrate 100 from the bottom of the target substrate 100, so that the pulsed laser can be concentrated on the upper surface (not marked) of the thermal conductive material 150, the inside of the thermal conductive material 150, the lower surface (not marked) of the thermal conductive material 150, the at least one welding pad 120 or the at least one electrode 220, and a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0132] The pulsed laser of the eleventh embodiment can be generated by a pulsed laser source, which can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0133] Embodiment 12

[0134] First, see Fig. 12A .like Fig. 12A As shown, a target substrate 100 and an electronic component 200 are provided, and the structures of the target substrate 100 and the electronic component 200 are the same as those described in the tenth embodiment, and are not described in detail herein. Fig. 12AAs shown, a solder 300 is further formed on the at least one pad 120 and / or the at least one electrode 220 , so that the at least one electrode 220 of the electronic component 200 and the at least one pad 120 of the target substrate 100 are indirectly contacted through the solder 300 .

[0135] Next, see Fig. 12B .like Fig. 12B As shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm, so that the pulsed laser irradiates the electronic component body 210 from above the electronic component 200, and the pulsed laser can be concentrated on the upper surface (not marked) of the thermal conductive material 250, the inside of the thermal conductive material 250, the lower surface (not marked) of the thermal conductive material 250, the at least one electrode 220, the solder 300 or the at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0136] The pulsed laser of the twelfth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0137] Embodiment 13

[0138] First, see Fig.13A .like Fig.13A As shown, a target substrate 100 and an electronic component 200 are provided, and the structures of the target substrate 100 and the electronic component 200 are the same as those described in the eleventh embodiment, and are not described in detail herein. Fig.13A As shown, a solder 300 is further formed on the at least one pad 120 and / or the at least one electrode 220 , so that the at least one electrode 220 of the electronic component 200 and the at least one pad 120 of the target substrate 100 are indirectly contacted through the solder 300 .

[0139] Next, see Fig. 13B .like Fig. 13BAs shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm, so that the pulsed laser irradiates the target substrate 100 from the bottom of the target substrate 100, and the pulsed laser can be concentrated on the upper surface (not marked) of the thermal conductive material 150, the inside of the thermal conductive material 150, the lower surface (not marked) of the thermal conductive material 150, the at least one welding pad 120 or the at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', thereby allowing the at least one electrode 220 of the electronic component 200 to be bonded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0140] The pulsed laser of the thirteenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0141] Embodiment 14

[0142] See also Figures 14A to 14B The electronic component bonding process disclosed in the fourteenth embodiment is generally similar to that disclosed in the tenth embodiment, and the only difference is that the fourteenth embodiment further includes disposing a transparent or semi-transparent medium layer 400 on the second upper surface 210A of the electronic component body 210, so that the pulsed laser irradiates the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent medium layer 400, and the pulsed laser can be concentrated on the upper surface (not shown) of the thermal conductive material 150, the front surface 210A, and the back surface 210B. A eutectic layer (not shown) is generated inside the thermal conductive material 150, on the lower surface (not shown) of the thermal conductive material 150, on the at least one welding pad 120 or on the at least one electrode 220, and between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0143] The pulsed laser of the fourteenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0144] Embodiment 15

[0145] See also Figures 15A to 15B . The electronic component bonding process disclosed in the fifteenth embodiment is substantially similar to that disclosed in the eleventh embodiment, and the only difference is that the fifteenth embodiment further includes the step of disposing a transparent or semi-transparent medium layer 400 on the first lower surface 100B of the target substrate 100, wherein the pulsed laser is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent medium layer 400, so that the pulsed laser can be concentrated on the upper surface (not marked) of the thermal conductive material 150, inside the thermal conductive material 150, the lower surface (not marked) of the thermal conductive material 150, the at least one welding pad 120 or the at least one electrode 220, and a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one welding pad 120 of the bonding area 110 of the target substrate 100, so that the electronic component 200 is welded to the at least one welding pad 120 of the bonding area 110 of the target substrate 100 by the pulsed laser through the at least one electrode 220.

[0146] The pulsed laser of the fifteenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0147] Embodiment 16

[0148] See also Figures 16A to 16BThe electronic component bonding process disclosed in the sixteenth embodiment is substantially similar to that disclosed in the twelfth embodiment, and the only difference is that the sixteenth embodiment further includes disposing a transparent or semi-transparent medium layer 400 on the second upper surface 210A of the electronic component body 210, so that the pulsed laser irradiates the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent medium layer 400, so that the pulsed laser can be concentrated on the upper surface (not shown) of the thermal conductive material 250, the inside of the thermal conductive material 250, the lower surface (not shown) of the thermal conductive material 250, the at least one electrode 220, the solder 300 or the at least one pad 120, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0149] The pulsed laser of the sixteenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0150] Embodiment 17

[0151] See also Figures 17A to 17B The electronic component bonding process disclosed in the seventeenth embodiment is substantially similar to that disclosed in the thirteenth embodiment, and the only difference is that the seventeenth embodiment further includes the step of disposing a transparent or semi-transparent medium layer 400 on the first lower surface 100B of the target substrate 100, wherein the pulsed laser is irradiated toward the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent medium layer 400, and the pulsed laser can be concentrated on the upper surface (not shown) of the thermal conductive material 150, the inside of the thermal conductive material 150, the lower surface (not shown) of the thermal conductive material 150, the at least one soldering pad 120 or the at least one electrode 220, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of the electronic component 200 is bonded to the at least one soldering pad 120 of the bonding area 110 of the target substrate 100 through the heated solder 300'.

[0152] The pulsed laser of the seventeenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0153] Embodiment 18

[0154] The method for mass transferring electronic components disclosed in the eighteenth embodiment is based on Figures 18A to 18C Instructions are as follows.

[0155] First, if Fig.18A As shown, a target substrate 100 is provided. The target substrate 100 has a first upper surface 100A and a first lower surface 100B opposite to each other. The first upper surface 100A includes a plurality of bonding areas 110, and each of the plurality of bonding areas 110 includes at least one bonding pad 120. Fig.18A As shown, a temporary substrate 500 is provided above the target substrate 100. A plurality of electronic components 200 are formed on the temporary substrate 500. Each of the plurality of electronic components 200 includes an electronic component body 210 and at least one electrode 220. The electronic component body 210 has a second upper surface 210A and a second lower surface 210B opposite to each other. The at least one electrode 220 is formed on the second lower surface 210B of the electronic component body 210 and is electrically connected to the electronic component body 210. The second lower surface 210B of the plurality of electronic component bodies 210 faces the first upper surface 100A of the target substrate 100. Each of the plurality of electronic components 200 is respectively aligned with each of the plurality of bonding areas 110 of the target substrate 100. The at least one electrode 220 of each of the plurality of electronic components 200 is aligned with at least one solder pad 120 of each of the plurality of bonding areas 110.

[0156] According to the present embodiment, the target substrate 100 may be, for example but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0157] According to the present embodiment, the target substrate 100 is illustrated as a flexible printed circuit board, and the flexible printed circuit board may include a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit, wherein the solder pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

[0158] According to this embodiment, the aforementioned multiple electronic components 200 are, for example, but not limited to, light emitting diodes, laser diodes, or semiconductor components, wherein the light emitted by the aforementioned light emitting diodes is, for example, but not limited to, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the aforementioned laser diode is, for example, but not limited to, between 390 nanometers and 1700 nanometers; the aforementioned semiconductor components are, for example, but not limited to, processors, memory integrated circuits, micro-component integrated circuits, logic integrated circuits, or analog integrated circuits. The electronic component 200 of the first embodiment is illustrated by taking a light emitting diode as an example.

[0159] According to this embodiment, the material of the at least one electrode 220 of each of the plurality of electronic components 200 and / or the at least one pad 120 of each of the plurality of bonding regions 110 may be, for example but not limited to, metal, metal alloy or metal oxide.

[0160] Then, if Fig.18B As shown, a pulsed laser is provided, the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm, so that the pulsed laser is irradiated from above the temporary substrate 500 toward the temporary substrate 500 and each of the plurality of electronic component bodies 210, so that the pulsed laser can be concentrated on the second upper surface 210A of the plurality of electronic component bodies 210, the interior of the plurality of electronic component bodies 210, the second lower surface 210B of the plurality of electronic component bodies 210, each of the plurality of electronic component bodies 210, At least one electrode 220 of the component 200 or at least one welding pad 120 of each of the aforementioned multiple bonding areas 110, thereby generating a eutectic layer (not shown) between the at least one electrode 220 of each of the aforementioned multiple electronic components 200 and the at least one welding pad 120 of each of the aforementioned multiple bonding areas 110 of the aforementioned target substrate 100, thereby allowing each of the aforementioned multiple electronic components 200 to be welded to the at least one welding pad 120 of each of the aforementioned multiple bonding areas 110 of the aforementioned target substrate 100 through the aforementioned at least one electrode 220 by the aforementioned pulsed laser.

[0161] After removing the temporary substrate 500, Fig.18C As shown, the plurality of electronic components 200 are transferred in bulk from the temporary substrate 500 to the plurality of bonding regions 110 of the target substrate 100. The temporary substrate 500 can be removed by being photolyzed or pyrolyzed simultaneously when the pulsed laser is irradiated from above the temporary substrate 500, or can be directly peeled off and removed after at least one electrode 220 of each of the plurality of electronic components 200 is bonded to at least one pad 120 of each of the plurality of bonding regions 110 of the target substrate 100.

[0162] In addition, according to other embodiments of the present invention, the electronic component joining methods disclosed in embodiments five, ten, fourteen, etc. can also be applied to the method of mass transfer of electronic components disclosed in this embodiment as needed, so that each of the aforementioned multiple electronic components 200 is welded on at least one welding pad 120 of each of the aforementioned multiple joining areas 110 of the aforementioned target substrate 100 by the aforementioned pulsed laser through the aforementioned at least one electrode 220.

[0163] The pulsed laser of the eighteenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0164] Embodiment 19

[0165] The method for mass transferring electronic components disclosed in the nineteenth embodiment is based on Figures 19A to 19C Instructions are as follows.

[0166] First, if Fig.19A As shown, a target substrate 100 and a temporary substrate 500 as shown in the eighteenth embodiment are provided, and their structures are the same as those described in the eighteenth embodiment, and are not repeated here. Fig.19A As shown, a solder 300 is further formed on the aforementioned plurality of pads 120 and / or the aforementioned plurality of electrodes 220 , so that at least one electrode 220 of each of the aforementioned plurality of electronic components 200 and at least one pad 120 of each of the aforementioned plurality of bonding areas 110 of the aforementioned target substrate 100 are indirectly contacted through the aforementioned solder 300 .

[0167] Then, if Fig.19BAs shown, a pulsed laser is provided, and the wavelength of the pulsed laser is, for example but not limited to, between 190nm and 11000nm, so that the pulsed laser is irradiated from above the temporary substrate 500 toward the temporary substrate 500 and each of the plurality of electronic component bodies 210, so that the pulsed laser can be concentrated on the second upper surface 210A of the plurality of electronic component bodies 210, the inside of the plurality of electronic component bodies 210, the second lower surface 210B of the plurality of electronic component bodies 210, at least one electrode 220 of each of the plurality of electronic components 200, the solder 300 or at least one pad 120 of each of the plurality of bonding areas 110, and the solder 300 is directly or indirectly heated by the pulsed laser to obtain a heated solder 300', so that the at least one electrode 220 of each of the plurality of electronic components 200 is bonded to the at least one pad 120 of each of the plurality of bonding areas 110 of the target substrate 100 through the heated solder 300'.

[0168] After removing the temporary substrate 500, Fig.19C As shown, the plurality of electronic components 200 are transferred in bulk from the temporary substrate 500 to the plurality of bonding regions 110 of the target substrate 100. The temporary substrate 500 can be removed by being photolyzed or pyrolyzed simultaneously when the pulsed laser is irradiated from above the temporary substrate 500, or can be directly peeled off and removed after at least one electrode 220 of each of the plurality of electronic components 200 is bonded to at least one pad 120 of each of the plurality of bonding regions 110 of the target substrate 100.

[0169] In addition, according to other embodiments of the present invention, the electronic component joining methods disclosed in embodiments 7, 12, 16, etc. can also be applied to the method of mass transferring electronic components disclosed in this embodiment as needed, so that each of the aforementioned multiple electronic components 200 is welded on at least one welding pad 120 of each of the aforementioned multiple joining areas 110 of the aforementioned target substrate 100 by the aforementioned pulsed laser through the aforementioned at least one electrode 220.

[0170] The pulsed laser of the nineteenth embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0171] Embodiment 20

[0172] The method for mass transferring electronic components disclosed in the present embodiment 20 is based on Figures 20A to 20C Instructions are as follows.

[0173] First, if Fig. 20A As shown, a target substrate 100 and a temporary substrate 500 as shown in the eighteenth embodiment are provided. The structures thereof are the same as those described in the eighteenth embodiment and will not be described again.

[0174] Secondly, if Fig. 20B As shown, a first laser is provided, the first laser is a pulsed laser and the wavelength of the first laser is, for example but not limited to, between 190nm and 11000nm, so that the first laser is irradiated from the bottom of the target substrate 100 toward the target substrate 100, and the first laser can be concentrated on the first upper surface 100A of the target substrate 100, the inside of the target substrate 100, the first lower surface 100B of the target substrate 100, at least one welding pad 120 of each of the plurality of bonding areas 110, or at least one electrode 220 of each of the plurality of electronic components 200, so that a eutectic layer (not shown) is generated between the at least one electrode 220 of each of the plurality of electronic components 200 and the at least one welding pad 120 of each of the plurality of bonding areas 110 of the target substrate 100, so that each of the plurality of electronic components 200 is welded on the at least one welding pad 120 of each of the plurality of bonding areas 110 of the target substrate 100 by the first laser through the at least one electrode 220.

[0175] The first laser of the twenty-first embodiment can be generated by a pulsed laser source, which can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source, wherein the frequency of the first laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0176] Then, if Fig. 20C As shown, a second laser is provided, the wavelength of the second laser is, for example but not limited to, between 190nm and 11000nm, so that the second laser irradiates the temporary substrate 500 from above the temporary substrate 500, so that the temporary substrate 500 is removed after photolysis or thermal decomposition, and as shown in FIG. Fig.20D As shown, the plurality of electronic components 200 are mass-transferred from the temporary substrate 500 to the plurality of bonding regions 110 of the target substrate 100 .

[0177] In addition, in other embodiments of the present invention, the temporary substrate 500 may also be directly peeled off and removed after at least one electrode 220 of each of the plurality of electronic components 200 is respectively bonded to at least one pad 120 of each of the plurality of bonding regions 110 of the target substrate 100 .

[0178] In addition, according to other embodiments of the present invention, the electronic component joining methods disclosed in embodiments six, eleven, fifteen, etc. can also be applied to the method of mass transferring electronic components disclosed in this embodiment as needed, so that each of the aforementioned multiple electronic components 200 is welded on at least one welding pad 120 of each of the aforementioned multiple joining areas 110 of the aforementioned target substrate 100 by the aforementioned first laser through the aforementioned at least one electrode 220.

[0179] Embodiment 21

[0180] The method for mass transferring electronic components disclosed in the twenty-first embodiment is based on Figures 21A to 21D Instructions are as follows.

[0181] First, if Fig.21A As shown, a target substrate 100 and a temporary substrate 500 as shown in the eighteenth embodiment are provided, and their structures are the same as those described in the eighteenth embodiment, and are not repeated here. Fig.21A As shown, a solder 300 is further formed on the aforementioned plurality of pads 120 and / or the aforementioned plurality of electrodes 220 , so that at least one electrode 220 of each of the aforementioned plurality of electronic components 200 and at least one pad 120 of each of the aforementioned plurality of bonding areas 110 of the aforementioned target substrate 100 are indirectly contacted through the aforementioned solder 300 .

[0182] Then, if Fig. 21B As shown, a first laser is provided, the first laser is a pulsed laser and the wavelength of the first laser is, for example but not limited to, between 190nm and 11000nm, so that the first laser is irradiated from the bottom of the target substrate 100 toward the target substrate 100, and the first laser can be concentrated on the first upper surface 100A of the target substrate 100, the inside of the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120 of each of the plurality of bonding areas 110, the solder 300 or at least one electrode 220 of each of the plurality of electronic components 200, and the solder 300 is directly or indirectly heated by the first laser to obtain a heated solder 300', so that the at least one electrode 220 of each of the plurality of electronic components 200 is bonded to the at least one pad 120 of each of the plurality of bonding areas 110 of the target substrate 100 through the heated solder 300'.

[0183] The first laser of the twenty-first embodiment can be generated by a pulsed laser source. The pulsed laser source can be, for example but not limited to, a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. The frequency of the pulsed laser is, for example but not limited to, 1 Hz to 1000 GHz, and the pulse width is, for example but not limited to, 0.1 femtoseconds to 0.9 seconds.

[0184] Then, if Fig. 21C As shown, a second laser is provided, the wavelength of the second laser is, for example but not limited to, between 190nm and 11000nm, so that the second laser irradiates the temporary substrate 500 from above the temporary substrate 500, so that the temporary substrate 500 is removed after photolysis or thermal decomposition, and as shown in FIG. Fig.21D As shown, the plurality of electronic components 200 are mass-transferred from the temporary substrate 500 to the plurality of bonding regions 110 of the target substrate 100 .

[0185] In addition, in other embodiments of the present invention, the temporary substrate 500 may also be directly peeled off and removed after at least one electrode 220 of each of the plurality of electronic components 200 is respectively bonded to at least one pad 120 of each of the plurality of bonding regions 110 of the target substrate 100 .

[0186] In addition, according to other embodiments of the present invention, the electronic component joining methods disclosed in embodiments eight, thirteen, seventeen, etc. can also be applied to the method of mass transfer of electronic components disclosed in this embodiment as needed, so that each of the aforementioned multiple electronic components 200 is welded on at least one welding pad 120 of each of the aforementioned multiple joining areas 110 of the aforementioned target substrate 100 by the aforementioned first laser through the aforementioned at least one electrode 220.

[0187] In summary, the electronic component bonding method and the method for mass transfer of electronic components disclosed in the present invention use a pulsed laser to laser weld the electronic component to the bonding pad of the bonding area of ​​a target substrate. The high temperature is generated for a short time during laser welding, so the heat generation and heat dissipation rates can be balanced during the laser welding process, so that the bonding interface temperature between the electronic component and the bonding pad of the bonding area of ​​the target substrate is moderate, so as to achieve the purpose of rapid welding without damaging the electronic component and the target substrate. Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the definition of the appended claims.

Claims

1. A method for bonding electronic components, Features The following steps are involved: Providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface comprising a bonding area, and the bonding area comprising at least one bonding pad; An electronic component is provided, the electronic component comprising an electronic component body and at least one electrode, the electronic component body having a second upper surface and a second lower surface opposite to each other, the at least one electrode being formed on the second lower surface of the electronic component body and electrically connected to the electronic component body, wherein the electronic component is aligned with a bonding area of ​​the target substrate, and the at least one electrode is aligned with at least one pad in the bonding area; and A pulsed laser is provided, and the electronic component is welded on at least one pad of the bonding area of ​​the target substrate by the pulsed laser through the at least one electrode.

2. The method for bonding electronic components as claimed in claim 1, wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

3. The method for joining electronic components as claimed in claim 2, wherein the flexible printed circuit board include: A soft insulating substrate; A circuit formed on the surface of the aforementioned flexible insulating substrate; as well as an insulating layer covering the aforementioned circuit; The soldering pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

4. The method for bonding electronic components as claimed in claim 1, wherein the electronic components are selected from a group consisting of light emitting diodes, laser diodes and semiconductor components. 5 . The method for bonding electronic components as claimed in claim 4 , wherein the light emitted by the light emitting diode is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light. 6 . The method for bonding electronic components as claimed in claim 4 , wherein the wavelength of the laser diode is between 390 nanometers and 1700 nanometers.

7. The method for bonding electronic components as claimed in claim 4, wherein the semiconductor component is selected from a group consisting of a processor, a memory integrated circuit, a micro-component integrated circuit, a logic integrated circuit and an analog integrated circuit. 8 . The method for bonding electronic components as claimed in claim 1 , wherein the material of the at least one electrode and / or the at least one soldering pad is metal, metal alloy or metal oxide respectively.

9. The method for joining electronic components as described in claim 1 further includes the step of forming a solder on the at least one soldering pad and / or the at least one electrode, so that the at least one electrode of the electronic component is indirectly in contact with the at least one electrode of the target substrate through the solder, and the solder is directly or indirectly heated by the pulsed laser to obtain a heated solder, thereby joining the at least one electrode of the electronic component to the at least one soldering pad of the joining area of ​​the target substrate through the heated solder.

10. The method for bonding electronic components as described in claim 1, wherein the pulsed laser is generated by a pulsed laser source, and the pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source. 11 . The electronic component bonding method as claimed in claim 1 , wherein the frequency of the pulsed laser is between 1 Hz and 1000 GHz, and the pulse width of the pulsed laser is between 0.1 femtoseconds and 0.9 seconds.

12. The method for bonding electronic components as claimed in claim 1, wherein the wavelength of the pulsed laser is between 190 nanometers and 11000 nanometers.

13. The method for joining electronic components as described in any one of claims 1 to 12 further includes the step of disposing a transparent or translucent medium layer on the second upper surface of the aforementioned electronic component body, wherein the aforementioned pulsed laser is irradiated toward the aforementioned electronic component body from above the aforementioned electronic component through the aforementioned transparent or translucent medium layer.

14. The method for joining electronic components as described in any one of claims 1 to 12 further includes the step of disposing a transparent or semi-transparent medium layer on the first lower surface of the target substrate, wherein the pulsed laser is irradiated toward the target substrate from below the target substrate through the transparent or semi-transparent medium layer.

15. A method for mass transfer of electronic components, Features The following steps are involved: Providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface comprising a plurality of bonding areas, and each of the bonding areas comprising at least one bonding pad; Providing a temporary substrate above the target substrate, with a plurality of electronic components formed on the temporary substrate, each of the electronic components comprising an electronic component body and at least one electrode, the electronic component body having a second upper surface and a second lower surface opposite to each other, the at least one electrode formed on the second lower surface of the electronic component body and electrically connected to the electronic component body, wherein the second lower surface of the electronic component body faces the first upper surface of the target substrate, and each of the electronic components is respectively aligned with each of the bonding areas of the target substrate, and at least one electrode of each of the electronic components is aligned with at least one pad of each of the bonding areas; and A pulsed laser is provided, and each of the aforementioned electronic components is welded on at least one welding pad of each of the aforementioned bonding areas of the aforementioned target substrate by the pulsed laser through the aforementioned at least one electrode. 16 . The method for mass transferring electronic components as claimed in claim 15 , wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

17. The method for mass transfer of electronic components as claimed in claim 16, wherein the flexible printed circuit board include: A soft insulating substrate; A circuit formed on the surface of the aforementioned flexible insulating substrate; as well as an insulating layer covering the aforementioned circuit; The soldering pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

18. The method for mass transferring electronic components as claimed in claim 15, wherein the electronic components are selected from one or more of the group consisting of light emitting diodes, laser diodes and semiconductor components.

19. The method for mass transfer of electronic components as claimed in claim 18, wherein the light emitted by the aforementioned light emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

20. The method for mass transfer of electronic components as claimed in claim 18, wherein the wavelength of the laser diode is between 390 nanometers and 1700 nanometers.

21. The method for mass transfer of electronic components as claimed in claim 18, wherein the aforementioned semiconductor components are selected from one or more groups consisting of processors, memory integrated circuits, micro-component integrated circuits, logic integrated circuits and analog integrated circuits.

22. The method for mass transferring electronic components as claimed in claim 15, wherein the material of at least one electrode of each of the electronic components and / or at least one pad of each of the bonding regions is metal, metal alloy or metal oxide.

23. The method for mass transfer of electronic components as described in claim 15 further includes the step of forming a solder on at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate and / or on at least one electrode of each of the aforementioned equal joining areas, so that at least one electrode of each of the aforementioned equal joining areas and at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate are indirectly in contact with each other through the aforementioned solder, and the aforementioned solder is directly or indirectly heated by the aforementioned pulsed laser to obtain a heated solder, thereby allowing at least one electrode of each of the aforementioned equal joining areas of the aforementioned target substrate to be joined to at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate through the aforementioned heated solder.

24. The method for mass transfer of electronic components as described in claim 15, wherein the pulsed laser is generated by a pulsed laser source, and the pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source.

25. The method for mass transfer of electronic components as claimed in claim 15, wherein the frequency of the pulsed laser is between 1 Hz and 1000 GHz, and the pulse width of the pulsed laser is between 0.1 femtoseconds and 0.9 seconds.

26. The method for mass transfer of electronic components as claimed in claim 15, wherein the wavelength of the pulsed laser is between 190 nanometers and 11000 nanometers.

27. A method for mass transfer of electronic components as described in claim 15, wherein the temporary substrate can be removed by being simultaneously photolyzed or thermally decomposed when the pulsed laser is irradiated toward the temporary substrate from above the temporary substrate, or can be directly peeled off and removed after at least one electrode of each of the aforementioned electronic components is respectively bonded to at least one pad of each of the aforementioned bonding areas of the target substrate.

28. The method for mass transfer of electronic components as described in any one of claims 15 to 27 further includes the step of setting a transparent or semi-transparent medium layer on the aforementioned temporary substrate, wherein the aforementioned pulsed laser is irradiated from above the aforementioned electronic components toward the aforementioned temporary substrate and each of the aforementioned electronic components through the aforementioned transparent or semi-transparent medium layer.

29. A method for mass transfer of electronic components, Features The following steps are involved: Providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface comprising a plurality of bonding areas, and each of the bonding areas comprising at least one bonding pad; A temporary substrate is provided above the target substrate. A plurality of electronic components are formed on the temporary substrate. Each of the electronic components includes an electronic component body and at least one electrode. The electronic component body has a second upper surface and a second lower surface opposite to each other. The at least one electrode is formed on the second lower surface of the electronic component body and is electrically connected to the electronic component body. The second lower surface of the electronic component body faces the first upper surface of the target substrate. Each of the electronic components is aligned with each of the bonding areas of the target substrate, and at least one electrode of each of the electronic components is aligned with at least one pad of each of the bonding areas. A first laser is provided, and each of the aforementioned electronic components is welded on at least one welding pad of each of the aforementioned bonding areas of the aforementioned target substrate by the aforementioned first laser through the aforementioned at least one electrode, wherein the aforementioned first laser is a pulsed laser.

30. The method for mass transferring electronic components as claimed in claim 29, wherein the target substrate is a semiconductor target substrate, a ceramic target substrate, a metal target substrate, a glass target substrate, a printed circuit board, or a flexible printed circuit board.

31. The method for mass transfer of electronic components as claimed in claim 30, wherein the flexible printed circuit board include: A soft insulating substrate; A circuit formed on the surface of the aforementioned flexible insulating substrate; as well as an insulating layer covering the aforementioned circuit; The soldering pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

32. The method for mass transferring electronic components as claimed in claim 29, wherein the electronic components are selected from one or more of the group consisting of light emitting diodes, laser diodes and semiconductor components.

33. The method for mass transfer of electronic components as described in claim 32, wherein the light emitted by the aforementioned light emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

34. The method for mass transfer of electronic components as claimed in claim 32, wherein the wavelength of the laser diode is between 390 nanometers and 1700 nanometers.

35. The method for mass transfer of electronic components as claimed in claim 32, wherein the aforementioned semiconductor components are selected from one or more groups consisting of processors, memory integrated circuits, micro-component integrated circuits, logic integrated circuits and analog integrated circuits.

36. The method for mass transferring electronic components as claimed in claim 29, wherein the material of at least one electrode of each of the aforementioned electronic components and / or at least one pad of each of the aforementioned bonding areas is metal, metal alloy or metal oxide.

37. The method for mass transfer of electronic components as described in claim 29 further includes the step of forming a solder on at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate and / or on at least one electrode of each of the aforementioned equal joining areas, so that at least one electrode of each of the aforementioned equal joining areas and at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate are indirectly in contact with each other through the aforementioned solder, and the aforementioned solder is directly or indirectly heated by the aforementioned first laser to obtain a heated solder, thereby allowing at least one electrode of each of the aforementioned equal joining areas of the aforementioned target substrate to be joined to at least one soldering pad of each of the aforementioned equal joining areas of the aforementioned target substrate through the aforementioned heated solder.

38. A method for mass transfer of electronic components as described in claim 29, wherein the temporary substrate can be removed by photolysis or thermal decomposition, or the temporary substrate can be directly peeled off and removed by irradiating the temporary substrate from above with a second laser after each of the aforementioned electronic components is joined to at least one pad of each of the aforementioned joining areas of the aforementioned target substrate by means of the aforementioned at least one electrode.

39. The method for mass transfer of electronic components as described in claim 29, wherein the first laser is generated by a pulsed laser source, and the pulsed laser source is a pulsed gas laser source, a pulsed liquid laser source, a pulsed solid laser source, a pulsed semiconductor laser source or a pulsed fiber laser source.

40. The method for mass transfer of electronic components as claimed in claim 29, wherein the frequency of the first laser is between 1 Hz and 1000 GHz, and the pulse width of the first laser is between 0.1 femtoseconds and 0.9 seconds.

41. The method for mass transfer of electronic components as claimed in claim 29, wherein the wavelength of the first laser is between 190 nanometers and 11000 nanometers.

42. The method for mass transfer of electronic components as claimed in claim 38, wherein the wavelength of the second laser is between 190 nanometers and 11000 nanometers.

43. The method for mass transfer of electronic components as described in any one of claims 29 to 42 further includes the step of setting a transparent or semi-transparent medium layer on the first lower surface of the target substrate, wherein the first laser is irradiated toward the target substrate from below the target substrate through the transparent or semi-transparent medium layer.

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