Light emitting device and manufacturing method thereof

Abstract

The invention provides a light-emitting device. The light-emitting device comprises a light-emitting chip, a first reflective adhesive layer, a light-transmitting layer, an adhesive material and a second reflective adhesive layer, the light-emitting chip has a light-emitting surface. The first reflective adhesive layer surrounds the first side surface of the light-emitting chip. The light-transmitting layer is arranged on the light-emitting surface of the light-emitting chip and is provided with a light-emitting surface and a second side surface. The adhesive material comprises a central part and an extension part, the central part corresponds to the light-emitting surface, and the extension part is connected with the central part and located on the first upper surface of the first reflective adhesive layer. The second reflective adhesive layer is arranged on the first reflective adhesive layer, surrounds the second side surface of the light-transmitting layer and wraps the extension part, and the light-emitting surface is exposed on the second upper surface of the second reflective adhesive layer. The invention further provides a manufacturing method of the light-emitting device.

Description

Technical Field

[0001] The present application relates to the field of light-emitting devices, and in particular to a photoelectric semiconductor device. Background Art

[0002] Optoelectronic semiconductor devices are widely used in today's life. With the development of technology, the application fields of optoelectronic semiconductors are becoming more extensive and they play an important role. For example, in the technical fields of automotive lighting, micro projectors, optical lighting and displays.

[0003] Therefore, for the above technical field, the light source conversion efficiency of optoelectronic semiconductors is particularly important.

[0004] See also Figure 1 , depicts a cross-sectional view of an optoelectronic semiconductor device 4 in the prior art. The optoelectronic semiconductor device 4 includes a circuit substrate 41, a light-emitting chip 42, and a light-transmitting layer 43. A glue layer 44 is provided between the light-emitting chip 42 and the light-transmitting layer 43, and the light-emitting chip 42 and the light-transmitting layer 43 are surrounded by a reflective layer 45. In this prior art, the glue of the reflective layer 45 easily penetrates between the light-emitting chip 42 and the light-transmitting layer 43 during the forming process (molding process), so that the light emitted by the light-emitting chip 42 is shielded, thereby reducing the light-emitting efficiency.

[0005] Therefore, how to design a structure of an optoelectronic semiconductor device to solve the above-mentioned technical problems is a topic of great concern to those skilled in the art. Summary of the invention

[0006] The technical problem to be solved by the present application is to provide a light emitting device and a manufacturing method thereof in view of the deficiencies in the prior art.

[0007] In order to solve the above-mentioned technical problems, the present application provides a light-emitting device, including a light-emitting chip, a first reflective adhesive layer, a light-transmitting layer, an adhesive material and a second reflective adhesive layer. The light-emitting chip has a light-emitting surface. The first reflective adhesive layer surrounds the first side surface of the light-emitting chip. The light-transmitting layer is arranged on the light-emitting surface of the light-emitting chip, and has a light-emitting surface and a second side surface. The adhesive material is arranged between the light-emitting chip and the light-transmitting layer, wherein the adhesive material includes a central portion and at least one extension portion, the central portion corresponds to the light-emitting surface, the extension portion is connected to the central portion and is located on the first upper surface of the first reflective adhesive layer, and extends to a portion of the second side surface of the light-transmitting layer. The second reflective adhesive layer is arranged on the first reflective adhesive layer, surrounds the second side surface of the light-transmitting layer and covers the extension portion, and the light-emitting surface is exposed on the second upper surface of the second reflective adhesive layer and is flush with the second upper surface.

[0008] According to some embodiments, the light emitting device further includes a circuit board, and the light emitting chip and the first reflective adhesive layer are disposed on the circuit board.

[0009] According to some embodiments, the light-transmitting layer has a wavelength conversion substance.

[0010] According to some embodiments, the light-transmitting layer defines a connecting surface facing the light-emitting surface, and an area of ​​the connecting surface is greater than, equal to, or smaller than an area of ​​the light-emitting surface.

[0011] According to some embodiments, when observing the cross section of the light emitting device from the side, the extension portion is triangular in shape.

[0012] According to some embodiments, there are four extension portions.

[0013] According to some embodiments, the thickness of the light-transmitting layer ranges from 100 to 300 um.

[0014] According to some embodiments, the refractive index of the light-transmitting layer is in the range of 1.0-2.0.

[0015] According to some embodiments, the light emitting device further includes a protective film covering the first reflective adhesive layer, the second reflective adhesive layer and the light-transmitting layer.

[0016] Further, according to some embodiments, the thickness of the protective film layer ranges from 10 to 100 um.

[0017] The present application also provides a method for manufacturing a light-emitting device, comprising: providing a light-emitting chip, the light-emitting chip having a light-emitting surface. Setting a first reflective adhesive layer, the first reflective adhesive layer surrounding the first side surface of the light-emitting chip. Setting an adhesive material on the light-emitting surface of the light-emitting chip. Setting a light-transmitting layer on the adhesive material, and applying pressure so that the adhesive material expands from at least one direction to form an adhesive element, the adhesive element comprising a central portion and an extension portion, the central portion corresponding to the light-emitting surface, the extension portion connected to the central portion and located on the first upper surface of the first reflective adhesive layer, and extending to a portion of the second side surface of the light-transmitting layer. Setting a second reflective adhesive layer on the first reflective adhesive layer, surrounding the second side surface of the light-transmitting layer and covering the extension portion, the light-emitting surface is exposed on the second upper surface of the second reflective adhesive layer.

[0018] According to some embodiments, the method for manufacturing a light emitting device further includes providing a circuit board, wherein the light emitting chip and the first reflective adhesive layer are located on the circuit board.

[0019] One of the beneficial effects of the present application is that the light-emitting device provided by the present application can improve the light-emitting effect of the light-emitting device and enhance its photoelectric conversion efficiency through technical solutions such as "a first reflective adhesive layer surrounds the first side surface of the light-emitting chip", "an adhesive material is arranged between the light-emitting chip and the light-transmitting layer to form an adhesive element, wherein the adhesive element includes a central portion and at least one extension portion, the central portion corresponds to the light-emitting surface, the extension portion is connected to the central portion and is located on the first upper surface of the first reflective adhesive layer, and extends to a portion of the second side surface of the light-transmitting layer", and "a second reflective adhesive layer is arranged on the first reflective adhesive layer, surrounds the second side surface of the light-transmitting layer and covers the extension portion, the light-emitting surface is exposed on the second upper surface of the second reflective adhesive layer, and is flush with the second upper surface".

[0020] The present application also provides a method for manufacturing a light-emitting device, which can also manufacture a light-emitting device with the above-mentioned technical effects.

[0021] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic cross-sectional view of a photoelectric semiconductor device in the prior art.

[0023] Figure 2 FIG. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present application.

[0024] Figure 3 for Figure 2 The top view of the illustrated embodiment only shows the light-transmitting layer 13 , the adhesive element 14 and the protective film 17 .

[0025] Figures 4 to 6 They are top views of a light emitting device according to an embodiment of the invention, and only the light-transmitting layer 13 , the adhesive element 14 and the protective film 17 are shown.

[0026] Figure 7 FIG. 1 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present application.

[0027] Figure 8 FIG. 1 is a schematic diagram of a process for manufacturing a light emitting device according to an embodiment of the present application.

[0028] Figures 9 to 13 Corresponding to Figure 8 Schematic diagram of the steps of the illustrated embodiment. DETAILED DESCRIPTION

[0029] See also Figure 2 and Figure 3 , Figure 2FIG. 1 is a schematic cross-sectional view of a light emitting device 1A according to an embodiment of the present application. Figure 3 for Figure 2 The top view of the embodiment shown only shows the light-transmitting layer 13, the adhesive element 14 and the protective film 17. The light-emitting device 1A includes a light-emitting chip 11, a first reflective adhesive layer 12, a light-transmitting layer 13, an adhesive element 14 and a second reflective adhesive layer 15. The light-emitting chip 11 has a light-emitting surface 111. The first reflective adhesive layer 12 surrounds the first side surface 121 of the light-emitting chip 11. The light-transmitting layer 13 is disposed on the light-emitting surface 111 of the light-emitting chip 11, and has a light-emitting surface 131 and a second side surface 132. The adhesive element 14 is disposed between the light-emitting chip 11 and the light-transmitting layer 13, wherein the adhesive element 14 includes a central portion 141 and an extension portion 142, wherein the central portion 141 corresponds to the light-emitting surface 111, and the extension portion 142 is connected to the central portion 141 and is located on the first upper surface 122 of the first reflective adhesive layer 12, and extends to a portion of the second side surface 132 of the light-transmitting layer 13. The second reflective adhesive layer 15 is disposed on the first reflective adhesive layer 12, surrounds the second side surface 132 of the light-transmitting layer 13 and covers the extension portion 142, and the light-emitting surface 131 is exposed on the second upper surface 151 of the second reflective adhesive layer 15. Preferably, the light-emitting surface 131 is flush with the second upper surface 151 of the second reflective adhesive layer 15. In other words, the present application forms the first reflective adhesive layer 12 and the extension portion 142 extending to a portion of the second side surface 134 of the light-transmitting layer 13, thereby preventing the colloid of the second reflective adhesive layer 15 from penetrating between the light-emitting chip 11 and the light-transmitting layer 13 when molding, thereby improving the light-emitting effect.

[0030] The light emitting chip 11 may be a vertical light emitting diode or a flip chip light emitting diode (eg Figure 2 Embodiment shown).

[0031] The substrate of the light-transmitting layer 13 of the present application can be any material commonly used in the art, such as resin, glass or ceramic. According to some embodiments, the light-transmitting layer 13 is, for example, a hydroxy acrylic resin. According to some embodiments, the light-transmitting layer 13 is a silicone-based resin, an epoxy resin or a polyimide resin. In some embodiments, the light-transmitting layer 13 has a wavelength conversion substance, such as added fluorescent powder or phosphorescent powder. For example, the light-transmitting layer 13 is a glass patch (Phosphor in Glass, PIG) with added fluorescent powder. In some embodiments, the refractive index of the light-transmitting layer 13 ranges from 1.0 to 2.0. Figure 2In the illustrated embodiment, the light-transmitting layer 13 defines a connecting surface 133 facing the light-emitting surface 111, and the area of ​​the connecting surface 133 is equal to the area of ​​the light-emitting surface 111. However, the present application is not limited to this, and in some embodiments, the area of ​​the connecting surface 133 may also be greater than or less than the area of ​​the light-emitting surface 111. In some embodiments, the thickness of the light-transmitting layer 13 ranges from 100 to 300 um. In addition, in some embodiments, the light-transmitting layer 13 contains light-diffusing particles to improve the uniformity of light output.

[0032] The adhesive element 14 adheres the light emitting chip 11 and the light-transmitting layer 13. Figure 2 As shown, the adhesive element 14 includes a central portion 141 and at least one extension portion 142. The central portion 141 is located between the light-emitting surface 111 and the light-transmitting layer 13. The extension portion 142 extends to the first upper surface 122 of the first reflective adhesive layer 12 and extends to a portion of the second side surface 132 of the light-transmitting layer 13. In other words, the extension portion 142 is not located on the light-emitting surface 111, nor does it exist between the light-emitting chip 11 and the first reflective adhesive layer 12. According to some embodiments, the adhesive element 14 is also light-transmitting and can be an organic material, such as polydimethylsiloxane. In addition, as Figures 3 to 6 As shown, the extension portion 142 may have one or more portions. For example, when the light emitting chip 11 and the light-transmitting layer 13 are quadrilaterals, the central portion 141 also has four boundaries. Figure 3 As shown, each boundary is connected to an extension portion 142, and there are four extension portions 142 in total. Figure 2 In the embodiment shown, when observing the cross section of the light emitting device 1A from the side, the extension portion 142 is in a triangular shape with an arc. However, the present application is not limited thereto, and the cross section of the extension portion 142 may also be in other geometric shapes, such as an arc shape.

[0033] In the present application, those skilled in the art can adjust the number and position of the extension parts according to actual needs, that is, they can refer to the penetration of the reflective glue in the original process and only provide the extension parts on the edges of the penetration glue.

[0034] See also Figures 4 to 6 , are top views of light emitting devices 1B, 1C and 1D according to an embodiment of the present application, respectively, and only the light-transmitting layer 13 , the adhesive element 14 and the protective film 17 are shown. Figures 4 to 6 The embodiment shown is Figure 3 The embodiment shown differs in the number of extensions 142. Figure 4 In the embodiment shown, there are three extension portions 142. Figure 5 In the illustrated embodiment, there are two extension portions 142 (the two extension portions may be adjacent to each other or located on two opposite sides). Figure 6 In the illustrated embodiment, there is one extending portion 142 .

[0035] Please refer to Figure 2 In this embodiment, the light emitting device 1A may further include a protective film 17, covering the first reflective adhesive layer 12, the second reflective adhesive layer 15 and the light-transmitting layer 13. The thickness of the protective film 17 is in the range of 10-100 um. The protective film 17 is light-transmitting, protecting the first reflective adhesive layer 12, the second reflective adhesive layer 15 and the light-transmitting layer 13 (including the light-emitting chip 11) from being affected by moisture or corrosive substances (such as sulfur). The material of the protective film 17 may be, for example, fluorine resin.

[0036] See also Figure 7 , is a cross-sectional schematic diagram of a light emitting device 1E according to an embodiment of the present application. Figure 1 The difference of the embodiment shown is that the light emitting chip 11 in the light emitting device 1E is illustrated as a vertical light emitting diode, and further includes a circuit board 16, on which the light emitting chip 11 is disposed and electrically connected to the circuit board 16 (through the electrode layer 22, the pad 20', the bonding wire 21 and the pad 20 located on the upper surface of the light emitting chip 11). Usually, the bottom of the vertical light emitting diode has a bottom electrode, which contacts and electrically connects to the circuit pattern of the circuit board 16 through a conductive adhesive, which is omitted here.

[0037] See also Figures 8 to 13 , and see also Figure 7 . Figure 8 FIG. 4 is a schematic diagram of a process for manufacturing a light emitting device according to an embodiment of the present application. Figures 9 to 13 Corresponding to Figure 8 Schematic diagram of steps of the embodiment shown. The manufacturing method 100 of the light emitting device at least comprises: step S1 to step S5.

[0038] Step S1: Provide a light emitting chip 11, wherein the light emitting chip 11 has a light emitting surface 111, such as Fig. 9 shown.

[0039] Step S2: a first reflective adhesive layer 12 is provided, wherein the first reflective adhesive layer 12 surrounds the first side surface 121 of the light emitting chip 11. Fig.10 shown.

[0040] Step S3: Dispose adhesive material 18 on the light emitting surface 111 of the light emitting chip 11, such as Fig.11 shown.

[0041] Step S4: a transparent layer 13 is disposed on the adhesive material 18, and a certain pressure is applied to the transparent layer 13, so that the adhesive material 14 expands in four directions, thereby forming an adhesive element 14. The adhesive element 14 forms a central portion 141 on the light emitting surface 111, and forms four extension portions 142 on the first upper surface 122 of the first reflective adhesive layer 12 and a portion of the second side surface 132 of the transparent layer 13, such as Figure 3 and Fig.12shown.

[0042] Step S5: Dispose the second reflective adhesive layer 15 on the first reflective adhesive layer 12, surrounding the second side surface 132 of the light-transmitting layer 13 and covering the extension portion 142, and the light-emitting surface 131 is exposed on the second upper surface 151 of the second reflective adhesive layer 15. Figure 8 In some embodiments, the top of the second reflective adhesive layer 15 is optionally ground and polished so that the light-emitting surface 131 of the light-transmitting layer 13 is exposed on the second upper surface 151 of the second reflective adhesive layer 15 and is flush with the second upper surface 151. In other words, when the second reflective adhesive layer 15 is formed by molding, for example, part of the side surface 134 of the light-transmitting layer 13 has been covered by the adhesive element 14, so there is no space for the reflective adhesive to penetrate between the light-transmitting layer 13 and the adhesive element 14.

[0043] Specifically, unlike the general dispensing process, the amount of adhesive material in step S3 of the present invention is deliberately adjusted, and the pressure in step S4 is matched to ensure that the adhesive material 14 forms an extension portion 142 on the first upper surface 122 after being squeezed. For example, when the adhesive material 18 is set in step S3, the position of the adhesive material 18 deviates from the center of the light-emitting surface 111 of the light-emitting chip 11, and the amount of adhesive material 18 is matched to adjust the force applied to the light-transmitting layer 13, so that the adhesive material 18 can be squeezed and extended only from one or some directions. In other words, the extension direction, extension length, thickness and number of the extension portion 142 can be extended by applying a certain pressure to the light-transmitting layer 13, so that the adhesive material 18 is expanded to form an adhesive element 14, and the adhesive element 14 has a central portion 141 located on the light-emitting surface 111, and one or more extension portions 142 located on the first upper surface 122 of the first reflective adhesive layer 12.

[0044] in accordance with Figure 8 The embodiment shown in the figure further includes step S1': providing a circuit board 16, the light emitting chip 11 is located on the circuit board 16 and is electrically connected to the circuit board 16, for example, the light emitting chip 11 is electrically connected to the circuit board 16 through the conductive layer 22, the pads 20, 20' and the bonding wires 21 (see Figure 7 ). In addition, in this embodiment, after executing step S5, step S6 is further executed: a protective film 17 is provided to cover the first reflective adhesive layer 12, the second reflective adhesive layer 15 and the light-transmitting layer 13, and the Figure 7 However, the present application does not limit whether the light emitting chip 11 is electrically connected to the circuit board 16. According to some embodiments, the user does not provide the circuit board 16, but sets an external electrode pin 30 (fan out) at the bottom of the light emitting chip 11. In this way, after executing step S5 or S6, the following steps are completed. Figure 2 The embodiment shown.

[0045] Please refer to the beneficial effects of the invention again Figure 2 and Figure 7 According to the embodiments, one of the beneficial effects of the present application is that the light-emitting device provided by the present application can prevent the reflective colloid from penetrating between the light-emitting chip and the light-transmitting layer when molding the second reflective colloid by forming the first reflective colloid layer and the extension portion extending to the side surface of the light-transmitting layer, thereby improving the light-emitting effect. According to some embodiments, the luminance of the light-emitting device is increased by about 18%.

[0046] The present application also provides a method for manufacturing a light-emitting device, which can also manufacture a light-emitting device with the above-mentioned technical effects.

[0047] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the protection scope of the claims of the present application. Therefore, all equivalent technical changes made using the contents of the present application specification and drawings are included in the protection scope of the claims of the present application.

Claims

1. A light emitting device, It is characterized in that The light emitting device comprises: A light-emitting chip having a light-emitting surface; a first reflective adhesive layer surrounding a first side surface of the light-emitting chip; A light-transmitting layer, disposed on the light-emitting surface of the light-emitting chip, and having a light-emitting surface and a second side surface; an adhesive element disposed between the light emitting chip and the light-transmitting layer, wherein the adhesive element comprises a central portion and at least one extending portion, the central portion corresponds to the light emitting surface, the extending portion is connected to the central portion and is located on a first upper surface of the first reflective adhesive layer and extends to a portion of the second side surface; and A second reflective adhesive layer is disposed on the first reflective adhesive layer, surrounds the second side surface and covers the extension portion, and the light emitting surface is exposed on a second upper surface of the second reflective adhesive layer and is flush with the second upper surface.

2. The light emitting device according to claim 1, It is characterized in that The light emitting device further includes a circuit board, and the light emitting chip is disposed on the circuit board and electrically connected to the circuit board.

3. The light emitting device according to claim 1, It is characterized in that The light-transmitting layer has a wavelength conversion substance.

4. The light emitting device according to claim 1, It is characterized in that The light-transmitting layer defines a connecting surface facing the light-emitting surface, and the area of ​​the connecting surface is greater than, equal to, or smaller than the area of ​​the light-emitting surface.

5. The light emitting device according to claim 1, It is characterized in that There are four extending parts.

6. The light emitting device according to claim 1, It is characterized in that The thickness of the light-transmitting layer is in the range of 100-300 um.

7. The light emitting device according to claim 1, It is characterized in that The refractive index of the light-transmitting layer is in the range of 1.0-2.

0.

8. The light emitting device according to claim 1, It is characterized in that The light emitting device further includes a protective film covering the first reflective adhesive layer, the second reflective adhesive layer and the light-transmitting layer.

9. The light emitting device according to claim 8, It is characterized in that The thickness of the protective film ranges from 10 to 100 um.

10. A method for manufacturing a light emitting device, It is characterized in that The manufacturing method of the light emitting device comprises: Providing a light-emitting chip, wherein the light-emitting chip has a light-emitting surface; Disposing a first reflective adhesive layer, wherein the first reflective adhesive layer surrounds a first side surface of the light-emitting chip; Disposing an adhesive material on the light-emitting surface of the light-emitting chip; Disposing a light-transmitting layer on the adhesive material, and applying a pressure to expand the adhesive material from at least one direction to form an adhesive element, wherein the adhesive element forms a central portion and an extending portion on the light-emitting surface, wherein the central portion corresponds to the light-emitting surface, and the extending portion is connected to the central portion and is located on a first upper surface of the first reflective adhesive layer and extends to a portion of a second side surface of the light-transmitting layer; and A second reflective adhesive layer is disposed on the first reflective adhesive layer, surrounding the second side surface and covering the extension portion, and the light emitting surface is exposed on a second upper surface of the second reflective adhesive layer.

11. A method for manufacturing a light emitting device according to claim 10, It is characterized in that The manufacturing method of the light emitting device further includes providing a circuit board, and the light emitting chip and the first reflective adhesive layer are located on the circuit board.

12. The method for manufacturing a light emitting device according to claim 10, It is characterized in that The light-transmitting layer has a wavelength conversion substance.

13. The method for manufacturing a light emitting device according to claim 10, It is characterized in that The light-transmitting layer defines a connecting surface facing the light-emitting surface, and the area of ​​the connecting surface is greater than, equal to, or smaller than the area of ​​the light-emitting surface.

14. The method for manufacturing a light emitting device according to claim 10, It is characterized in that There are four extending parts.

15. The method for manufacturing a light emitting device according to claim 10, It is characterized in that The manufacturing method of the light emitting device further comprises disposing a protective film to cover the first reflective adhesive layer, the second reflective adhesive layer and the light-transmitting layer.

16. A method for manufacturing a light emitting device according to claim 15, It is characterized in that The thickness of the protective film ranges from 10 to 100 um.

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