Waveguide microstrip probe transition structure and terahertz solid-state device
By designing a compact waveguide microstrip probe transition structure, the conduction loss of terahertz wave is reduced by using vertically arranged metal microstrips and probes, the problem of high conduction loss in terahertz solid-state devices is solved, and the device is improved performance of
Patent Information
- Application Number
- CN202411515089.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2024-12-13
AI Technical Summary
In the terahertz frequency band, the waveguide-suspended microstrip transition structure design is difficult to effectively reduce the conduction loss of electromagnetic waves, affecting the working performance of terahertz solid-state devices.
Design a waveguide microstrip probe transition structure, including a waveguide structure with a cuboid structure, a microstrip line cavity embedded in a short circuit surface and a dielectric substrate, and set up a metal microstrip and probe, the probe is perpendicular to the metal microstrip and deviate from the short circuit surface , a compact structure is formed to reduce conduction loss.
It realizes low loss conduction of terahertz waves, improves the operating performance of terahertz solid-state devices, and facilitates circuit matching and integration.
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Figure CN119133812A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of electromagnetic wave conduction, and in particular to a waveguide microstrip probe transition structure and a terahertz solid-state device. Background Art
[0002] Terahertz waves are electromagnetic waves with a frequency between 0.1THz and 10THz, between microwaves and infrared radiation, and have physical properties such as broadband, stability, coherence, penetration and low energy. Terahertz waves have been widely studied and applied in the fields of radar imaging, atmospheric remote sensing, astronomical observation and high-speed broadband communication. However, the application of terahertz waves still faces many challenges. The frequency of the terahertz band is relatively high, and the size of terahertz solid-state devices is drastically reduced compared to the size of solid-state devices in the traditional microwave band. The waveguide-suspension microstrip transition structure is a key structure in terahertz solid-state devices. How to reasonably design the waveguide-suspension microstrip transition structure and reduce the conduction loss of terahertz waves is of great significance to improving the working performance of terahertz solid-state devices. Summary of the invention
[0003] The purpose of the present invention is to provide a waveguide-microstrip probe transition structure and a terahertz solid-state device, which can improve the compactness of the probe transition structure and achieve low-loss conduction of terahertz waves.
[0004] In order to solve the above technical problems, the present invention provides a waveguide microstrip probe transition structure for conducting terahertz waves, comprising:
[0005] A waveguide structure having a rectangular parallelepiped structure; wherein the waveguide structure is used to conduct terahertz waves along a set conduction direction;
[0006] A microstrip line cavity embedded in a short-circuit surface of the waveguide structure, wherein the short-circuit surface is a side wall surface perpendicular to the conduction direction;
[0007] A dielectric substrate embedded in the microstrip line cavity;
[0008] A metal microstrip disposed on the dielectric substrate and extending along the set conduction direction;
[0009] The probe is arranged on the dielectric substrate, connected to the end of the metal microstrip close to the waveguide structure, and perpendicular to the metal microstrip.
[0010] In an optional embodiment of the present application, the probe is a monopole antenna with a straight-line structure.
[0011] In an optional embodiment of the present application, the probe and the end of the metal microstrip are connected via a matching microstrip.
[0012] The widths of the metal microstrip, the matching microstrip and the probe decrease in sequence.
[0013] In an optional embodiment of the present application, the width of the metal microstrip is 0.08 mm to 0.10 mm, the width of the matching microstrip is 0.05 mm to 0.07 mm, and the width of the probe is 0.010 mm to 0.021 mm.
[0014] In an optional embodiment of the present application, the length of the metal microstrip is 0.40 mm to 0.48 mm, the length of the matching microstrip is 0.05 mm to 0.07 mm, and the length of the probe is 0.2 mm to 0.3 mm.
[0015] In an optional embodiment of the present application, the distance between the side of the probe facing away from the metal microstrip and the short-circuit surface is one quarter of the wavelength of the terahertz wave.
[0016] In an optional embodiment of the present application, the metal microstrip, the matching microstrip and the probe are an integrally formed copper structure.
[0017] In an optional embodiment of the present application, the dielectric substrate is an aluminum nitride substrate with a thickness of 0.04 mm to 0.06 mm.
[0018] In an optional embodiment of the present application, the waveguide structure is a standard WR5.1 waveguide.
[0019] A terahertz solid-state device comprises a chip cavity and two waveguide-microstrip probe transition structures as described above; wherein the input end and the output end of the chip cavity are respectively connected to the ends of the metal microstrips of the two waveguide-microstrip probe transition structures away from the probes.
[0020] The present invention provides a waveguide-microstrip probe transition structure and a terahertz solid-state device. The waveguide-microstrip probe transition structure is used to conduct terahertz waves, and comprises: a waveguide structure with a rectangular parallelepiped structure; wherein the waveguide structure is used to conduct terahertz waves along a set conduction direction; a microstrip line cavity embedded in a short-circuit surface of the waveguide structure, wherein the short-circuit surface is a side wall surface perpendicular to the conduction direction; a dielectric substrate embedded in the microstrip line cavity; a metal microstrip arranged on the dielectric substrate and extending along the set conduction direction; and a probe arranged on the dielectric substrate and connected to an end of the metal microstrip on a side close to the waveguide structure.
[0021] In the present application, the side wall surface on the waveguide structure that is perpendicular to the set conduction direction of the terahertz wave is used as a short-circuit surface, and a microstrip line cavity carrying a metal microstrip and a probe is arranged on the short-circuit surface. Compared with the probe transition structure that uses the E-plane or H-plane on the waveguide structure that is parallel to the electromagnetic wave conduction direction as the short-circuit surface, the overall structure of the waveguide microstrip probe transition structure in the present application is more compact, and can effectively reduce the additional transmission loss caused by the discontinuous structure of the traditional E-plane probe, realize low-loss conduction of terahertz waves, and facilitate circuit matching and integration when used in subsequent terahertz solid-state devices; it can be seen that the waveguide microstrip probe transition structure in the present application is used to conduct terahertz waves, has a compact structure and low conduction loss, and is conducive to improving the working performance of terahertz solid-state devices having the probe transition structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0023] FIG1 is a schematic structural diagram of a waveguide-microstrip probe transition structure provided in an embodiment of the present application;
[0024] FIG2 is a perspective structural diagram of a microstrip line cavity in a waveguide-microstrip probe transition structure provided in an embodiment of the present application;
[0025] FIG3 is a schematic structural diagram of a cross-section of a waveguide-microstrip probe transition structure provided in an embodiment of the present application;
[0026] FIG4 is a schematic diagram of a top view of a terahertz solid-state device provided in an embodiment of the present application;
[0027] FIG5 is a schematic diagram of the structure of an existing solid-state device;
[0028] FIG6 is a schematic diagram of simulation coordinates of the S11 parameters of the waveguide-microstrip probe transition structure provided in an embodiment of the present application;
[0029] FIG7 is a schematic diagram of simulation coordinates of the S21 parameters of the waveguide-microstrip probe transition structure provided in an embodiment of the present application;
[0030] FIG. 8 is a diagram showing the input impedance simulation results of the waveguide-microstrip probe transition structure provided in an embodiment of the present application. DETAILED DESCRIPTION
[0031] The core of the present invention is to provide a waveguide-microstrip probe transition structure and a terahertz solid-state device, which can reduce the conduction loss of terahertz wave conduction, and the probe transition structure is compact.
[0032] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
[0033] As shown in Figures 1 to 5, Figure 1 is a structural schematic diagram of a waveguide-microstrip probe transition structure provided in an embodiment of the present application; Figure 2 is a perspective structural schematic diagram of a microstrip line cavity in the waveguide-microstrip probe transition structure provided in an embodiment of the present application; Figure 3 is a structural schematic diagram of a cross section of a waveguide-microstrip probe transition structure provided in an embodiment of the present application; Figure 4 is a top-down structural schematic diagram of a terahertz solid-state device provided in an embodiment of the present application; and Figure 5 is a structural schematic diagram of an existing solid-state device.
[0034] It can be understood that the waveguide-microstrip probe transition structure involved in the present application is used to conduct terahertz waves and can be used as a partial structure in a terahertz solid-state device.
[0035] In a specific embodiment of the present application, the waveguide-microstrip probe transition structure may include:
[0036] A waveguide structure 1 having a rectangular parallelepiped structure; wherein the waveguide structure 1 is used to conduct terahertz waves along a set conduction direction;
[0037] A microstrip line cavity 2 embedded in a short-circuit surface 10 of a waveguide structure 1, wherein the short-circuit surface 10 is a side wall surface perpendicular to the conduction direction;
[0038] A dielectric substrate 3 embedded in the microstrip line cavity 2;
[0039] A metal microstrip 4 is disposed on a dielectric substrate 3 and extends along a set conduction direction;
[0040] A probe 5 is arranged on the dielectric substrate 3 and connected to the end of the metal microstrip 4 close to the waveguide structure 1 .
[0041] As shown in FIG1 , in the waveguide-microstrip probe transition structure of the present embodiment, a waveguide structure 1 of substantially rectangular structure is adopted; the waveguide structure 1 may be a standard WR5.1 waveguide. In FIG1 , the X-axis direction is used as the set conduction direction of the terahertz wave in the waveguide structure 1; generally, the set conduction direction is also the direction parallel to the side surface with the largest width dimension on the waveguide structure 1; the Y-axis direction is the direction parallel to the direction with the maximum amplitude of the electric field, and the Z-axis is the direction parallel to the direction with the maximum amplitude of the magnetic field; thus, the side wall surface perpendicular to the Y-axis on the waveguide structure 1 is also called the E-plane, and the side wall surface perpendicular to the Z-axis is also called the H-plane. Currently, conventional waveguide-microstrip probe transition structures include an E-plane waveguide probe 5 transition structure and an H-plane waveguide probe 5 structure, that is, a suspended microstrip line cavity 2 is set on the E-plane or the H-plane.
[0042] Different from the conventional waveguide-microstrip probe transition structure, the microstrip line cavity 2 in this embodiment is neither arranged on the E plane nor on the H plane, but on the side wall plane perpendicular to the E plane and the H plane, making the entire probe 5 transition structure more compact.
[0043] As shown in Fig. 2, in order to more clearly show the structures such as the dielectric substrate 3, the metal microstrip 4, and the probe 5 in the microstrip line cavity 2, the outlines of the dielectric substrate 3, the metal microstrip 4, and the probe 5 are shown in dotted lines in Fig. 2. In this embodiment, a dielectric substrate 3 with a flat structure is embedded in the suspended microstrip line cavity 2. The dielectric substrate 3 and the XOY plane are parallel to each other. The dielectric substrate 3 can be an aluminum nitride substrate with a thickness of 0.04 mm to 0.06 mm. The aluminum nitride substrate is used as a substrate for carrying the metal microstrip 4 and the probe 5. It has good thermal conductivity and low dielectric loss, which is helpful to achieve low-loss transmission of terahertz signals.
[0044] In addition, a metal microstrip 4 and a probe 5 perpendicular to the metal microstrip 4 are extended on the dielectric substrate 3 along the set conduction direction, and the metal microstrip 4 is located on the central axis of the waveguide structure 1 (the central axis along the X-axis direction) and extends along a straight line; therefore, although the microstrip line cavity 2 is embedded in the waveguide structure 1 from the side wall surface perpendicular to the set conduction direction on the waveguide structure 1, because the probe 5 is perpendicular to the metal microstrip 4 on the dielectric substrate 3, the probe 5 is an E-plane probe perpendicular to the E-plane.
[0045] It should be noted that in a conventional waveguide-microstrip probe transition structure, the microstrip line and the probe 5 are generally arranged in a straight line; referring to Figure 5, Figure 5 is a structural schematic diagram of a conventional solid-state device. When the waveguide-microstrip probe transition structure and the chip cavity 100 are connected in the solid-state device, it is necessary to keep the probe structure parallel to the input end 101 and the output end 102 of the chip cavity 100. This is also the reason why in a conventional waveguide-microstrip probe transition structure, the microstrip cavity needs to be embedded into the waveguide 1 from the E-surface of the waveguide 200, so that the probe structure is an E-surface probe embedded from the E-surface of the waveguide 200; this also makes the waveguide and the chip cavity 100 in the solid-state device form an L-shaped structure as a whole.
[0046] Compared with the conventional solid-state device shown in Figure 5, as shown in Figure 4, when the waveguide microstrip probe transition structure in the present application is circuit-connected with the chip cavity 100, although the microstrip line cavity 2 is embedded from the side wall surface perpendicular to the set conduction direction in the waveguide structure 1, because the probe 5 and the metal microstrip 4 in the present application are perpendicular to each other, an E-plane probe is also formed, thereby making the input end 101 and the output end 102 of the probe 5 and the chip cavity 100 parallel to each other, and the chip cavity 100 and the two connected waveguide microstrip probe transition structures can be distributed in a straight line in a straight line; compared with the conventional solid-state device containing an E-plane waveguide microstrip probe transition structure, the overall structure of the terahertz solid-state device with the waveguide microstrip probe transition structure in this embodiment is more compact, which is more conducive to the terahertz solid-state device to adapt to various installation spaces, and is conducive to the wide application of terahertz solid-state devices.
[0047] Furthermore, the waveguide-microstrip probe transition structure in this embodiment can also effectively reduce the additional transmission loss caused by the discontinuous structure of the traditional E-plane probe, and facilitates circuit matching and integration when used in subsequent terahertz solid-state devices.
[0048] 3 , which is a cross-sectional view of the cross section of the plane where the metal microstrip 4 and the probe 5 in FIG. 1 are located; in an optional embodiment of the present application, the probe 5 disposed on the dielectric substrate 3 may be a monopole antenna having a straight-line structure.
[0049] The monopole antenna can achieve broadband and low-loss efficient coupling, and realize the transition conversion between the TE10 mode and the quasi-TEM mode; during the operation of the probe 5, the terahertz signal is input from the waveguide structure 1, coupled to the metal microstrip 4 through the monopole antenna for transmission, and has reciprocity.
[0050] In addition, in order to further ensure good coupling performance of the monopole antenna, in practical applications, the distance between the side of the probe 5 facing away from the metal microstrip 4 and the short-circuit surface 10 is one quarter of the wavelength of the terahertz wave.
[0051] It should be noted that the edge of the short-circuit surface 10 of the waveguide structure 1 generally has a chamfer, while the middle area is a plane perpendicular to the E-plane and the H-plane of the waveguide; and the distance between the side of the probe 5 away from the metal microstrip 4 and the short-circuit surface 10 referred to in this embodiment is the distance between the side of the probe 5 away from the metal microstrip 4 and the surface of the plane area on the short-circuit surface 10; as shown in Figure 3, the top view contour line of the short-circuit surface 10 shown in dotted lines in Figure 3, the distance D shown in Figure 3 is the distance between the side of the probe 5 away from the metal microstrip 4 and the short-circuit surface 10, which is one quarter of the wavelength of the terahertz wave. The position of one quarter of the wavelength of the terahertz wave from the short-circuit surface 10 is also the position where the terahertz wave coupling intensity is the largest, thereby ensuring that the probe 5 in this embodiment can achieve the maximum intensity coupling of the terahertz wave during the conduction process.
[0052] On this basis, in order to further better achieve the matching transition between the metal microstrip 4 and the probe 5 in the present application, in an optional embodiment, a matching microstrip 6 is further arranged between the metal microstrip 4 and the probe 5, wherein the widths of the metal microstrip 4, the matching microstrip 6 and the probe 5 decrease successively.
[0053] Referring to Figure 3, Figure 3 is a cross-sectional view of the cross section of the plane where the metal microstrip 4 and the probe 5 are located in Figure 1. Based on Figure 3, it can be seen that the metal microstrip 4 and the probe 5 are both I-shaped structures extending along a straight line, and the width direction of the matching microstrip 6 is parallel to the width direction of the metal microstrip 4; in practical applications, the width of the metal microstrip 4 can be 0.08mm~0.10mm, the width of the matching microstrip 6 can be 0.05mm~0.07mm, and the width of the probe 5 can be 0.010mm~0.021mm; for example, the width of the metal microstrip 4 can be 0.08mm, 0.10mm, 0.09mm; the width of the matching microstrip 6 can be 0.05mm, 0.06mm, 0.07mm; and the width of the probe 5 can be 0.010mm, 0.021mm, 0.011mm.
[0054] On this basis, the length of the metal microstrip 4 can be 0.40 mm to 0.48 mm, the length of the matching microstrip 6 can be 0.05 mm to 0.07 mm, and the length of the probe 5 can be 0.2 mm to 0.3 mm.
[0055] In addition, in this embodiment, the metal microstrip 4 , the matching microstrip 6 , and the probe 5 may be an integrally formed copper structure, thereby reducing the impedance of the circuit structure formed by the metal microstrip 4 , the matching microstrip 6 , and the probe 5 .
[0056] Based on the above discussion, the waveguide microstrip probe transition structure in the present embodiment can be simulated and tested to obtain the simulation schematic diagrams shown in Figures 6 to 8, wherein Figure 6 is a simulation coordinate schematic diagram of the S11 parameter of the waveguide microstrip probe transition structure provided in the embodiment of the present application; Figure 7 is a simulation coordinate schematic diagram of the S21 parameter of the waveguide microstrip probe transition structure provided in the embodiment of the present application; and Figure 8 is a diagram of the input impedance simulation results of the waveguide microstrip probe transition structure provided in the embodiment of the present application.
[0057] 6 and 7 , within the frequency range of 155 GHz to 185 GHz, the typical value of the S11 parameter is approximately -30 dB, and the typical value of the S21 parameter is approximately -0.1 dB; and within the operating frequency of approximately 30 GHz, S11 <-20 dB, and the input impedance is as shown in FIG8 , achieving wide bandwidth, low reflection coefficient, low transmission loss, and flat input impedance. It can be seen that the waveguide-microstrip probe transition structure in the present application has the characteristics of compact structure and low loss.
[0058] Based on the above discussion, the present application further provides an embodiment of a terahertz solid-state device, which may include a chip cavity and two waveguide-microstrip probe transition structures as described in any of the above items; wherein the input end and the output end of the chip cavity are respectively connected to the ends of the metal microstrips of the two waveguide-microstrip probe transition structures that are away from the probe.
[0059] 4 , in the terahertz solid-state device of the present application, a straight-line structure is formed between the chip cavity and the two waveguide microstrip probe transition structures. The overall structure is compact and can achieve low-loss transmission of terahertz waves.
[0060] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "includes", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment comprising a series of elements are inherent to the elements. In the absence of more restrictions, the elements limited by the sentence "comprising one..." do not exclude the presence of other identical elements in the process, method, article or equipment comprising the elements. In addition, the above-mentioned technical solution provided in the embodiment of the present application is consistent with the corresponding technical solution in the prior art in principle, and the part is not described in detail, so as to avoid too much redundancy.
[0061] The principles and implementation methods of the present invention are described in this article using specific examples. The description of the above embodiments is only used to help understand the method and core ideas of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made to the present invention without departing from the principles of the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.
Claims
1. A waveguide-microstrip probe transition structure, characterized in that: Used to conduct terahertz waves, including: A waveguide structure having a rectangular parallelepiped structure; wherein the waveguide structure is used to conduct terahertz waves along a set conduction direction; A microstrip line cavity embedded in a short-circuit surface of the waveguide structure, wherein the short-circuit surface is a side wall surface perpendicular to the conduction direction; A dielectric substrate embedded in the microstrip line cavity; A metal microstrip disposed on the dielectric substrate and extending along the set conduction direction; The probe is arranged on the dielectric substrate, connected to the end of the metal microstrip close to the waveguide structure, and perpendicular to the metal microstrip.
2. The waveguide-microstrip probe transition structure according to claim 1, characterized in that: The probe is a monopole antenna with a straight-line structure.
3. The waveguide-microstrip probe transition structure according to claim 2, characterized in that: The probe and the end of the metal microstrip are connected via a matching microstrip. The widths of the metal microstrip, the matching microstrip and the probe decrease in sequence.
4. The waveguide-microstrip probe transition structure according to claim 3, characterized in that: The width of the metal microstrip is 0.08 mm to 0.10 mm, the width of the matching microstrip is 0.05 mm to 0.07 mm, and the width of the probe is 0.010 mm to 0.021 mm.
5. The waveguide-microstrip probe transition structure according to claim 3, characterized in that: The length of the metal microstrip is 0.40 mm to 0.48 mm, the length of the matching microstrip is 0.05 mm to 0.07 mm, and the length of the probe is 0.2 mm to 0.3 mm.
6. The waveguide-microstrip probe transition structure according to claim 2, characterized in that: The distance between the side of the probe facing away from the metal microstrip and the short-circuit surface is one quarter of the wavelength of the terahertz wave.
7. The waveguide-microstrip probe transition structure according to claim 2, characterized in that: The metal microstrip, the matching microstrip and the probe are an integrally formed copper structure.
8. The waveguide-microstrip probe transition structure according to claim 1, characterized in that: The dielectric substrate is an aluminum nitride substrate with a thickness of 0.04 mm to 0.06 mm.
9. The waveguide-microstrip probe transition structure according to claim 1, characterized in that: The waveguide structure is a standard WR5.1 waveguide.
10. A terahertz solid-state device, characterized in that: It comprises a chip cavity and two waveguide-microstrip probe transition structures as claimed in any one of claims 1 to 9; wherein the input end and the output end of the chip cavity are respectively connected to the ends of the metal microstrips of the two waveguide-microstrip probe transition structures away from the probes.