Electroabsorption modulated laser chip and manufacturing method thereof

Abstract

The present application discloses an electro-absorption modulated laser chip and a manufacturing method thereof, and relates to the technical field of semiconductor devices. The chip comprises a substrate, a modulator layer, a passive waveguide layer, a laser layer, an amplifier layer, a cladding layer and a contact layer. The modulator layer is arranged in a modulator region of the substrate. The passive waveguide layer is arranged in a spacing region between the laser layer and the modulator layer and in an amplifier region on the other side of the modulator layer by a butt-joint growth method. The laser layer is arranged in the laser region on one side of the passive waveguide layer in the spacing region by a butt-joint growth method. The amplifier layer is arranged above the passive waveguide layer in the amplifier region. The cladding layer and the contact layer are arranged above the functional layer in sequence. A mask is used to cover a specific region during the butt-joint growth process, and the mask is removed after the growth. The technical solution in the present application can simplify the manufacturing steps while making the active gain material in the amplifier region on the passive waveguide material, thereby reducing the optical signal loss and improving the chip saturated optical output power.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor devices, and in particular to an electro-absorption modulated laser chip and a method for manufacturing the same. Background Art

[0002] Electroabsorption modulated distributed feedback semiconductor lasers (EMLs) are the most promising optical signal sources in wavelength division multiplexing networks. The main reason is that this integrated device has many unique advantages, such as: small size, easy to mass produce, and therefore relatively low cost; low operating voltage, low power consumption; high optical coupling efficiency, low insertion loss; no need to consider polarization issues; stable and reliable structure; most importantly, easy to integrate with other semiconductor optoelectronic devices on a single chip, and strong functional scalability. Therefore, EMLs have been one of the research hotspots of major optoelectronic device companies and scientific research institutions at home and abroad for many years. For applications such as PON, in addition to requiring EML chips to have high modulation rates, they are also required to have high output optical power, which brings difficulties to the design and production of chips.

[0003] In terms of chip design, the commonly used methods in the prior art to increase the high output optical power of the chip include increasing the driving current, replacing the high-efficiency grating or semiconductor, and improving the thermal management technology. Increasing the driving current will cause the chip to heat up, increase power consumption, and may cause chip aging and reliability problems. Replacing the high-efficiency grating or semiconductor can only improve the output optical power from the material itself, which is costly. Improving the thermal management technology increases the complexity of system design and manufacturing cost, and the heat dissipation system itself also needs to occupy a certain space. These methods cannot effectively improve the output optical power of the chip under the requirements of low power consumption and low cost. In terms of chip manufacturing, the traditional manufacturing method usually separately manufactures the corresponding functional layers in different areas on the substrate. For chips with relatively complex structures, multiple mask manufacturing, photolithography and partition growth steps are required during the manufacturing process. Each step needs to be strictly controlled during the process, which not only increases the complexity of the manufacturing process, but also easily generates alignment errors between the functional layers. Especially when processing different areas, the selective removal, covering and realignment of the mask often cause error accumulation due to factors such as material thickness and stress, which in turn affects the performance of the entire chip, making it difficult to ensure the yield of the entire process. The complex steps also increase the production time and cost. Summary of the invention

[0004] The purpose of the present application is to provide an electro-absorption modulated laser chip with an integrated high-power semiconductor optical amplifier and a manufacturing method, which adopts a simpler method to make the active gain material of the optical amplifier area on the chip on the passive waveguide material, thereby reducing the limitation factor of the light field in the gain material, improving the saturated light output power of the chip, simplifying the manufacturing steps and reducing the complexity.

[0005] The technical solution of the present application is: to provide a method for manufacturing an electro-absorption modulated laser chip, the method comprising:

[0006] Step 1, dividing a modulator region, an amplifier region, a laser region and a spacer region on a substrate, wherein the amplifier region and the laser region are located on both sides of the modulator region, and the spacer region is located between the laser region and the modulator region;

[0007] Step 2, growing a modulator material on the substrate, using a mask to cover the modulator material in the modulator area, and selectively removing the modulator material in other areas to form a modulator layer;

[0008] Step 3, growing passive waveguide materials on both sides of the modulator layer and removing the mask;

[0009] Step 4, using a mask to cover the passive waveguide material in the modulator layer and the spacer area, selectively removing the passive waveguide material in the laser area, and forming a passive waveguide layer, wherein the passive waveguide layer is located in the spacer area on one side of the modulator layer and in the amplifier area on the other side of the modulator layer;

[0010] Step 5, growing an active material layer on the laser region on one side of the passive waveguide layer in the spacer region and on the passive waveguide layer in the amplifier region to form a laser layer and an amplifier layer respectively, and removing the mask;

[0011] Step 6: Make a grating on the laser layer, and then grow a cladding layer and a contact layer in sequence on top of each functional layer.

[0012] Furthermore, step 2 also includes: growing a buffer layer on the substrate, wherein the buffer layer is located between each functional layer and the substrate.

[0013] Further, the modulator layer uses InGaAsP multiple quantum well material, InGaAsP multiple quantum body material, InGaAlAs multiple quantum well material or InGaAlAs multiple quantum body material;

[0014] The passive waveguide layer uses undoped InGaAsP, undoped InGaAlAs, n-type doped InGaAsP or n-type doped InGaAlAs, and the passive waveguide layer is composed of a single bandgap wavelength material or materials with different bandgap wavelengths;

[0015] The laser layer and the amplifier layer use InGaAsP multiple quantum well material, nGaAsP multiple quantum body material, InGaAlAs multiple quantum well material or InGaAlAs multiple quantum body material.

[0016] Furthermore, the bandgap wavelengths of the laser layer and the amplifier layer are 30 to 100 nm longer than those of the modulator layer; and the bandgap wavelength of the passive waveguide layer is more than 100 nm shorter than that of the laser layer.

[0017] Further, the grating uses a uniform period grating, a grating with a phase shift structure introduced, or a sampled grating structure.

[0018] The present application also provides an electro-absorption modulated laser chip, which comprises: a substrate, a modulator layer, a passive waveguide layer, a laser layer, an amplifier layer, a cladding layer and a contact layer;

[0019] A modulator region, an amplifier region and a laser region are arranged on the substrate, the amplifier region and the laser region are arranged on both sides of the modulator region respectively, and a spacing region is arranged between the modulator region and the laser region;

[0020] The modulator layer is disposed in the modulator region of the substrate;

[0021] The passive waveguide layer is arranged in the amplifier region on one side of the modulator layer and in the spacer region on the other side of the modulator layer by butt-joint growth;

[0022] The laser layer is arranged in the laser region on one side of the passive waveguide layer in the spacer region by a butt-joint growth method;

[0023] The amplifier layer is disposed above the passive waveguide layer in the amplifier region;

[0024] The cladding layer and the contact layer are sequentially arranged on each functional layer from bottom to top.

[0025] Furthermore, the electro-absorption modulated laser chip further comprises a grating, and the grating is arranged between the laser layer and the cladding layer.

[0026] Furthermore, the electro-absorption modulated laser chip further comprises a buffer layer, and the buffer layer is arranged between each functional layer and the substrate.

[0027] Furthermore, the modulator layer, the passive waveguide layer and the laser layer are located in the same layer.

[0028] The beneficial effects of this application are:

[0029] The technical solution in the present application can simplify the manufacturing steps of the high-power electro-absorption modulated laser chip in the prior art. First, a modulator layer is manufactured on a substrate, and then a passive waveguide layer is butt-grown on both sides of the modulator layer to complete the manufacturing of passive waveguide layers in different regions at one time. After the passive waveguide layer is manufactured, active gain materials are butt-grown in the laser region and the amplifier region at the same time, and the active gain materials in the amplifier region are manufactured on the passive waveguide material. The technical solution in the present application butt-grown materials in multiple regions at the same time can simplify the manufacturing steps, and at the same time, the active gain materials in a specific region can be manufactured on the passive waveguide material, thereby improving the saturated light output power of the chip. Compared with the method of separately manufacturing corresponding functional layers in different regions in the prior art, the steps of mask manufacturing and partitioned growth are reduced, error accumulation is avoided, the manufacturing yield is improved, and the production time and cost are reduced.

[0030] The technical solution in the present application sets the active gain material of the optical amplifier area on the chip on the passive waveguide material. Such a structure can guide the light field to tilt toward the substrate side, instead of concentrating in the active gain material layer, and can effectively reduce the absorption and scattering loss of light in the amplifier layer and cladding, and improve the saturated light output power of the chip. Compared with the prior art, the technical solution in the present application can reduce the loss of light in other functional layers by guiding the light field to tilt toward the substrate side when the same semiconductor material is selected, effectively improve the output light power, and the design is simple and easy to implement, without increasing the cost of materials and optimizing the optical waveguide design, and at the same time, it does not increase the extra power consumption of the chip, avoiding chip aging and reliability problems. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The advantages of the above and / or additional aspects of the present application will become apparent and easily understood in the description of the embodiments in conjunction with the following drawings, in which:

[0032] Figure 1 is a side schematic diagram of an electro-absorption modulated laser chip structure according to an embodiment of the present application;

[0033] Figure 2 is a side view schematic diagram after growing a buffer layer and a modulator material layer according to an embodiment of the present application;

[0034] Figure 3 is a side view of a modulator layer and a dielectric mask thereon according to an embodiment of the present application;

[0035] Figure 4 is a side schematic diagram after the passive waveguide material layer is butt-grown according to an embodiment of the present application;

[0036] Figure 5 is a side schematic diagram of a passive waveguide layer and a modulator layer according to an embodiment of the present application;

[0037] Figure 6 is a side view schematic diagram after a laser layer, a grating and an amplifier layer are arranged according to an embodiment of the present application;

[0038] Figure 7 It is a schematic diagram of the structure of the absorption modulated laser chip manufactured by the existing method in Example 2.

[0039] Among them, 10 is a substrate, 20 is a buffer layer, 30 is a modulator layer, 40 is a passive waveguide layer, 50 is a laser layer, 51 is a grating, 60 is an amplifier layer, 70 is a cladding layer, 80 is a contact layer, 100 is a first dielectric mask, and 200 is a second dielectric mask. DETAILED DESCRIPTION

[0040] In order to more clearly understand the above-mentioned purposes, features and advantages of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0041] In the following description, many specific details are elaborated to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present application is not limited to the specific embodiments disclosed below.

[0042] The chip of the present invention can be made based on InP-based semiconductor materials, or based on GaAs or GaN-based semiconductor materials. Taking the InP-based material system as an example, the following generally introduces an electro-absorption modulated laser chip and its manufacturing method in an embodiment of the present invention.

[0043] like Figures 1 to 6 As shown, this embodiment provides an electro-absorption modulated laser chip, which includes: a substrate 10, a modulator layer 30, a passive waveguide layer 40, a laser layer 50, a grating 51, an amplifier layer 60, a cladding layer 70 and a contact layer 80.

[0044] A modulator region (EAM), an amplifier region (SOA) and a laser region (LD) are arranged on the substrate 10. The amplifier region and the laser region are arranged on both sides of the modulator region respectively. A spacer region (S) is also arranged between the modulator region and the laser region.

[0045] The modulator layer 30 is arranged in the modulator region of the substrate 10; the passive waveguide layer 40 is arranged in the spacer region and the optical amplifier region on both sides of the modulator region by a butt-joint growth method; the laser layer 50 is arranged in the laser region on the side of the spacer region away from the modulator region by a butt-joint growth method, wherein the modulator layer 30, the passive waveguide layer 40 and the laser layer 50 are located in the same layer, and the passive waveguide layer 40 in the spacer region is arranged between the modulator layer 30 and the laser layer 50; the grating 51 is arranged above the laser layer 50, and the amplifier layer 60 is arranged above the passive waveguide layer 40 in the optical amplifier region; the cladding layer 70 is arranged above each functional layer, and these functional layers include the modulator layer 30, the passive waveguide layer 40 in the spacer region, the grating 51 and the amplifier layer 60, and the contact layer 80 is arranged above the cladding layer 70.

[0046] The electro-absorption modulated laser chip also includes a buffer layer 20, which is arranged between the substrate 10 and some functional layers. The partial functional layers include a modulator layer 30, a passive waveguide layer 40 and a laser layer 50. The buffer layer 20 is used to alleviate the problem of lattice mismatch between the substrate 10 and the functional layer, and reduce stress and manufacturing defects.

[0047] In this embodiment, the modulator layer 30 may be made of InGaAsP multiple quantum well material, InGaAsP multiple quantum body material, InGaAlAs multiple quantum well material or InGaAlAs multiple quantum body material.

[0048] The passive waveguide layer 40 can be made of undoped InGaAsP or InGaAlAs, or n-type doped InGaAsP or InGaAlAs, whose bandgap wavelength is more than 100nm shorter than the operating wavelength of the laser layer 50; the passive waveguide layer 40 can be composed of a single bandgap wavelength material, or can be composed of materials with different bandgap wavelengths. By adjusting the ratio of In, Ga, As, P or In, Ga, As, Al, the bandgap energy of the material is changed, thereby changing the wavelength.

[0049] For example, the passive waveguide layer 40 is made of undoped InGaAsP material, and the composition ratio In:Ga:As:P is set to 0.74:0.26:0.56:0.44, and its band gap wavelength is about 1200nm. The laser layer 50 is made of InGaAsP material, and the composition ratio In:Ga:As:P is set to 0.73:0.27:0.59:0.41, and the operating wavelength is about 1300nm. The band gap wavelength of the passive waveguide layer 40 is 100nm shorter than the operating wavelength of the laser layer 50.

[0050] The laser layer 50 and the amplifier layer 60 are active material layers, and InGaAsP multiple quantum well material, InGaAsP multiple quantum body material, InGaAlAs multiple quantum well material or InGaAlAs multiple quantum body material can be selected. The band gap wavelengths of the laser layer 50 and the amplifier layer 60 correspond to their respective operating wavelengths, and are both 30 to 100 nm longer than the band gap wavelength of the modulator layer 30.

[0051] The grating 51 may be a uniform periodic structure, or a grating or sampled grating structure with a phase shift structure. The cladding 70 may be made of InP material, and the contact layer 80 may be made of InGaAs material. The buffer layer 20 may be made of InP material. The substrate 10 may be an n-type InP substrate.

[0052] In this embodiment, when setting functional layers in various regions on the substrate 10, the corresponding material layer can be first grown on the entire surface, and then a dielectric mask is used to cover the material layer in a specific region, and the material layer in other regions is selectively removed. Finally, the dielectric mask is removed and the material layer in the mask-covered region is used as the corresponding functional layer, wherein the dielectric mask can be made of silicon oxide or silicon nitride material.

[0053] The material layers in other regions can be removed by dry etching, wet etching, a combination of dry and wet etching, or laser etching, and the removal can be partial or overall. For example, when setting the modulator layer 30, the modulator material layer can be grown on the entire surface first, and then the material layer in the modulator area can be covered with the first dielectric mask 100, and the material layers in other regions can be selectively removed by dry etching or wet etching, and finally the first dielectric mask 100 can be removed, and the material layer in the modulator area can be used as the modulator layer 30.

[0054] In this embodiment, in the optical amplifier region of the substrate 10, the passive waveguide layer 40 (whose function is to guide and transmit light waves) is arranged below the amplifier layer 60 (whose function is to provide amplification or gain for light waves), the passive waveguide layer 40 is formed of a passive waveguide material, and the amplifier layer 60 is formed of an active material. Such a design arranges the passive waveguide material below the active gain material, which can make the light field (i.e., the optical field) deviate toward one side of the substrate, that is, guide the light field to tilt toward one side of the substrate, reduce the limitation factor of the light field in the amplifier layer 60 and the cladding 70 (i.e., the factor affecting the propagation and gain efficiency of light), avoid excessive light absorption and scattering loss in the amplifier layer 60, improve the transmission efficiency of light, thereby reducing the loss of light inside the device and improving the saturated output power of the amplifier layer 60.

[0055] The present application also proposes a method for manufacturing an electro-absorption modulated laser chip, the manufacturing method comprising:

[0056] Step 1, preparing a substrate 10, dividing the substrate 10 into a modulator region, an amplifier region, a laser region and a spacer region, wherein the amplifier region and the laser region are located on both sides of the modulator region, and the spacer region is located between the laser region and the modulator region;

[0057] Step 2, sequentially growing a buffer layer 20 and a modulator material layer on the substrate 10, using a first dielectric mask 100 to cover the modulator material in the modulator region on the substrate 10, and selectively removing the modulator material in other regions to form a modulator layer 30;

[0058] Step 3, growing passive waveguide materials on both sides of the modulator layer 30, and removing the first dielectric mask 100;

[0059] Step 4, using a second dielectric mask 200 to cover the passive waveguide material in the modulator layer 30 and the spacer region, selectively removing the passive waveguide material in the laser region, and forming a passive waveguide layer 40, wherein the passive waveguide layer 40 is located in the spacer region on one side of the modulator layer 30 and in the amplifier region on the other side of the modulator layer 30;

[0060] Step 5, growing an active material layer on the laser region on one side of the passive waveguide layer 40 in the spacer region and on the passive waveguide layer 40 in the amplifier region, the active material layer in the laser region forms a laser layer 50, the active material layer in the amplifier region forms an amplifier layer 60, and removing the second dielectric mask 200;

[0061] Step 6: fabricate a grating 51 on the laser layer 50, and then sequentially grow a cladding layer 70 and a contact layer 80 on top of each functional layer.

[0062] Taking the InP-based semiconductor material system as an example, the specific preparation method is as follows:

[0063] First, a buffer layer 20 and a modulator material layer are sequentially grown on a cleaned n-type substrate 10, a first dielectric mask 100 is used to cover the modulator material in the modulator region on the substrate 10, and the modulator material in the laser region, the spacer region and the amplifier region is selectively removed by dry etching or wet etching, and the modulator material in the modulator region is used as the modulator layer 30;

[0064] Then, under the action of the first dielectric mask 100, a passive waveguide material layer is butt-grown on both sides of the modulator layer 30 (i.e., another different material is grown on the edge of the already grown material layer by a specific epitaxial growth technology so that the two materials are seamlessly joined together), and no passive waveguide material layer is grown in the modulator region covered by the mask. After removing the original first dielectric mask 100 of the modulator region, a second dielectric mask 200 is made again on the passive waveguide material layer covering the modulator layer 30 and the spacer region, and the passive waveguide material in the laser region is selectively removed, and the passive waveguide material layers in the spacer region and the amplifier region are retained as the passive waveguide layer 40;

[0065] Under the action of the second dielectric mask 200, a laser material layer is butt-grown on the laser region on one side of the passive waveguide layer 40 in the spacer region and on the passive waveguide layer 40 in the amplifier region, the laser material layer in the laser region on one side of the spacer region is used as the laser layer 50, and the laser material layer above the passive waveguide layer 40 in the amplifier region is used as the amplifier layer 60, and the second dielectric mask 200 is removed;

[0066] Finally, a grating 51 is made on the laser layer 50 by photolithography or etching. After the production is completed, a cladding layer 70 and a contact layer 80 are grown from bottom to top on the entire functional layer including the modulator layer 30, the passive waveguide layer 40 in the spacer area, the grating 51 and the amplifier layer 60 to complete the production of the electro-absorption modulated laser chip.

[0067] In this embodiment, the laser layer 50 and the grating 51 form a laser, which generates an optical signal under the action of an external driving current when working. The optical signal enters the modulator layer 30 through the passive waveguide layer 40 in the spacer area. The modulator layer 30 modulates the optical signal through the electric absorption effect. The modulated optical signal enters the passive waveguide layer 40 in the amplifier area. Since the passive waveguide layer 40 is located below the amplifier layer 60, the optical field is concentrated in the passive waveguide layer 40 and deviates to the side of the substrate 10. Under the action of the external driving current, the amplifier layer 60 generates new photons through the stimulated emission process of the active gain material. These new photons reduce the loss of the optical signal in the amplifier layer 60 through the optimized optical coupling structure (that is, the passive waveguide material is arranged below the active gain material). Since the passive waveguide layer 40 provides a low-loss transmission path, this design can effectively improve the transmission efficiency and overall gain of the optical signal, thereby achieving a high saturation power output of the optical signal. Among them, since the refractive index of the passive waveguide material is greater than that of the InP substrate material, and the high refractive index material has a stronger optical confinement ability, photons tend to be transmitted and localized in the high refractive index material. The passive waveguide layer 40 is arranged below the amplifier layer 60, so that the photons in the laser layer 50 and the new photons generated by the amplifier layer 60 can enter the passive waveguide layer 40 in large quantities and be transmitted by the passive waveguide layer 40, so that the entire light field is biased toward the passive waveguide layer 40, thereby reducing light loss.

[0068] Example 1: The passive waveguide layer uses undoped InGaAsP with an element ratio of

[0069] 0.74:0.26:0.56:0.44, the laser layer and amplifier layer materials are InGaAsP multi-quantum well materials, the element ratio is 0.73:0.27:0.59:0.41, and the first electro-absorption modulated laser chip is manufactured according to the above steps 1 to 5. After the chip is manufactured, the emission wavelength of the laser is detected to be about 1300nm, a driving current of 100mA is applied, and the power of the amplified optical signal is detected to be between 30mW and 50mW.

[0070] Example 2: The passive waveguide layer uses undoped InGaAsP with an element ratio of

[0071] 0.74:0.26:0.56:0.44, the laser layer and amplifier layer materials are InGaAsP multi-quantum well materials, the element ratio is 0.73:0.27:0.59:0.41, and the second electro-absorption modulated laser chip is manufactured by the existing technical method. The specific steps include:

[0072] S1: Divide the substrate into a modulator region, an amplifier region, a laser region and a spacer region; S2: Grow a buffer layer and InGaAsP multi-quantum well material on the substrate in sequence, use a mask to cover the laser region, and selectively remove the InGaAsP multi-quantum well material in other regions to form a laser layer; S3: Grow a passive waveguide material in the spacer region on one side of the laser layer, and remove the mask; S4: Use a mask to cover the laser layer and the passive waveguide material in the spacer region, and selectively remove the passive waveguide material in other regions to form a passive waveguide layer; S5: Grow a modulator material in the modulator region, and remove the mask; S6: Use a mask to cover the laser layer, the passive waveguide layer and the modulator region, and selectively remove the modulator material in other regions to form a modulator layer; S7: Grow an InGaAsP multi-quantum well material in the amplifier region on one side of the modulator layer to form an amplifier layer; S8: Remove the mask, make a grating on the laser layer, and then grow a cladding layer and a contact layer in sequence on top of each functional layer.

[0073] The structure of the second electro-absorption modulated laser chip is as follows Figure 7 As shown, the amplifier layer is located on one side of the modulator layer. After the chip is manufactured, the emission wavelength of the detection laser is about 1300nm, a driving current of 100mA is applied, and the power of the optical signal after detection and amplification is between 15mW and 25mW.

[0074] From the comparison between Example 1 and Example 2, it can be seen that the method of the present invention can reduce the number of manufacturing steps, and placing the passive waveguide material under the active gain material can reduce the transmission loss. The technical solution of the present invention can be used to effectively compensate for signal attenuation in long-distance optical fiber communication and improve the distance and quality of signal transmission.

[0075] The steps in this application can be adjusted in order, combined, and deleted according to actual needs.

[0076] The units in the device of the present application can be combined, divided and deleted according to actual needs.

[0077] Although the present application is disclosed in detail with reference to the accompanying drawings, it should be understood that these descriptions are merely exemplary and are not intended to limit the application of the present application. The scope of protection of the present application is defined by the appended claims and may include various modifications, alterations and equivalents made to the invention without departing from the scope and spirit of the present application.

Claims

1. A method for manufacturing an electro-absorption modulated laser chip, characterized in that: The production method comprises: Step 1, dividing a modulator region, an amplifier region, a laser region and a spacer region on a substrate (10), wherein the amplifier region and the laser region are located on both sides of the modulator region, and the spacer region is located between the laser region and the modulator region; Step 2, growing a modulator material on the substrate (10), using a mask to cover the modulator material in the modulator area, and selectively removing the modulator material in other areas to form a modulator layer (30); Step 3, growing passive waveguide materials on both sides of the modulator layer (30) and removing the mask; Step 4, using a mask to cover the passive waveguide material in the modulator layer (30) and the spacer region, selectively removing the passive waveguide material in the laser region, and forming a passive waveguide layer (40), wherein the passive waveguide layer (40) is located in the spacer region on one side of the modulator layer (30) and in the amplifier region on the other side of the modulator layer (30); Step 5, growing an active material layer on the laser region on one side of the passive waveguide layer (40) in the spacer region and above the passive waveguide layer (40) in the amplifier region to form a laser layer (50) and an amplifier layer (60) respectively, and removing the mask; Step 6: fabricate a grating (51) on the laser layer (50), and then sequentially grow a cladding layer (70) and a contact layer (80) on top of each functional layer.

2. The method for manufacturing an electro-absorption modulated laser chip according to claim 1, characterized in that: The step 2 further comprises: growing a buffer layer (20) on the substrate (10), wherein the buffer layer (20) is located between each functional layer and the substrate (10).

3. The method for manufacturing an electro-absorption modulated laser chip according to claim 1, characterized in that: The modulator layer (30) uses InGaAsP multi-quantum well material, InGaAsP multi-quantum body material, InGaAlAs multi-quantum well material or InGaAlAs multi-quantum body material; The passive waveguide layer (40) uses undoped InGaAsP, undoped InGaAlAs, n-type doped InGaAsP or n-type doped InGaAlAs, and the passive waveguide layer (40) is composed of a single bandgap wavelength material or materials with different bandgap wavelengths; The laser layer (50) and the amplifier layer (60) use InGaAsP multiple quantum well material, nGaAsP multiple quantum body material, InGaAlAs multiple quantum well material or InGaAlAs multiple quantum body material.

4. The method for manufacturing an electro-absorption modulated laser chip according to claim 2, characterized in that: The bandgap wavelengths of the laser layer (50) and the amplifier layer (60) are 30 to 100 nm longer than that of the modulator layer (30); and the bandgap wavelength of the passive waveguide layer (40) is more than 100 nm shorter than that of the laser layer (50).

5. The method for manufacturing an electro-absorption modulated laser chip according to claim 1, characterized in that: The grating (51) uses a uniform period grating, a grating with a phase shift structure or a sampled grating structure.

6. An electro-absorption modulated laser chip, wherein the electro-absorption modulated laser chip is manufactured by the method for manufacturing the electro-absorption modulated laser chip according to any one of claims 1 to 5, wherein: The electro-absorption modulated laser chip comprises: a substrate (10), a modulator layer (30), a passive waveguide layer (40), a laser layer (50), an amplifier layer (60), a cladding layer (70) and a contact layer (80); A modulator region, an amplifier region and a laser region are arranged on the substrate (10), the amplifier region and the laser region are arranged on both sides of the modulator region respectively, and a spacing region is arranged between the modulator region and the laser region; The modulator layer (30) is arranged in a modulator region of the substrate (10); The passive waveguide layer (40) is arranged in the amplifier region on one side of the modulator layer (30) and the spacer region on the other side of the modulator layer (30) by a butt-joint growth method; The laser layer (50) is arranged in a laser region on one side of the passive waveguide layer (40) in the spacer region by a butt-joint growth method; The amplifier layer (60) is arranged above the passive waveguide layer (40) in the amplifier region; The cladding layer (70) and the contact layer (80) are sequentially arranged above each functional layer from bottom to top; The modulator layer (30) is formed by growing a modulator material on the substrate (10), covering the modulator region material with a mask, and then selectively removing the modulator material in other regions; The passive waveguide layer (40) is formed by butt-growing passive waveguide materials on both sides of the modulator layer (30) and removing the mask, then using the mask to cover the modulator layer (30) and the passive waveguide material in the spacing area, and finally selectively removing the passive waveguide material in the laser area; The laser layer (50) and the amplifier layer (60) are formed by butt-growing active material layers on the laser region on one side of the spacer region passive waveguide layer (40) and on the amplifier region passive waveguide layer (40).

7. The electro-absorption modulated laser chip according to claim 6, characterized in that: The electro-absorption modulated laser chip further comprises a grating (51), wherein the grating (51) is arranged between the laser layer (50) and the cladding layer (70).

8. The electro-absorption modulated laser chip according to claim 6, characterized in that: The electro-absorption modulated laser chip further comprises a buffer layer (20), wherein the buffer layer (20) is arranged between each functional layer and the substrate (10).

9. The electro-absorption modulated laser chip according to claim 6, characterized in that: The modulator layer (30), the passive waveguide layer (40) and the laser layer (50) are located on the same layer.

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