Radio frequency drive circuit, radio frequency power supply and semiconductor process equipment

Abstract

The embodiment of the invention provides a radio frequency drive circuit, a radio frequency power supply and semiconductor process equipment. Comprising the steps that a signal input module outputs a radio frequency driving signal and an initial enable signal; when the first-stage full-bridge driving amplification module is enabled, the radio frequency driving signal is amplified, and an amplified radio frequency driving signal is generated; the main path full-bridge amplification module amplifies the amplified radio frequency driving signal, and generates and outputs radio frequency power; the signal input detection protection module generates a working enable signal according to the amplified radio frequency driving signal when acquiring an initial enable signal, so as to enable the first-stage full-bridge driving amplification module; according to the embodiment of the invention, high-frequency radio-frequency signals can be quickly responded, the radio-frequency driving circuit is protected, and the stability is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment, and in particular to a radio frequency drive circuit, a radio frequency power supply and a semiconductor process equipment. Background Art

[0002] The RF power drive circuit is a high-voltage and high-frequency circuit that is widely used in industry and research. The full-bridge drive circuit is a common architecture to control current and voltage and achieve efficient power conversion. However, the current full-bridge drive circuit has a slow response time. When the frequency of the drive signal exceeds a high frequency such as 1Mhz, it begins to become unstable or even unable to work. In addition, there is currently a lack of circuit protection mechanism, which can easily lead to abnormal circuit output. Summary of the invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide a radio frequency driving circuit, a radio frequency power supply and a semiconductor process equipment that overcome the above problems or at least partially solve the above problems.

[0004] In order to solve the above problems, in a first aspect of the present invention, an embodiment of the present invention discloses a radio frequency driving circuit, comprising:

[0005] A signal input module, used for outputting a radio frequency driving signal and an initial enabling signal;

[0006] A first-stage full-bridge drive amplifier module is connected to the output end of the signal input module and is used to amplify the RF drive signal to generate an amplified RF drive signal when enabled;

[0007] A main full-bridge amplifier module, connected to the output end of the first-stage full-bridge drive amplifier module, for amplifying the amplified RF drive signal, generating and outputting RF power;

[0008] A signal input detection protection module, whose input end is connected to the output end of the signal input module and the input end of the main full-bridge amplifier module, and whose output end is connected to the input end of the first-stage full-bridge drive amplifier module, is used to generate a working enable signal according to the amplified RF drive signal when the initial enable signal is obtained, so as to enable the first-stage full-bridge drive amplifier module. Optionally, the signal input detection protection module is also used to shut down the first-stage full-bridge drive amplifier module in response to an abnormality in the amplified RF drive signal.

[0009] Optionally, the signal input module is used to output two RF drive signals with a phase difference, and the RF drive circuit includes two first-level full-bridge drive amplifier modules, and the two first-level full-bridge drive amplifier modules are respectively used to access the RF drive signals with different phases; the first-level full-bridge drive amplifier module includes: a first full-bridge amplifier circuit and a first inverter;

[0010] The input end of the first inverter is connected to the signal input module for receiving the corresponding RF drive signal, and the output end of the first inverter is connected to the first full-bridge amplifier circuit; the first full-bridge amplifier circuit is used to amplify the RF drive signal when enabled to generate the amplified RF drive signal.

[0011] Optionally, the first full-bridge amplifier circuit includes two half-bridge drive circuits and a second inverter; one of the two half-bridge drive circuits is connected to the output end of the first inverter, and the other half-bridge drive circuit is connected to the output end of the first inverter through the second inverter;

[0012] The half-bridge driving circuit comprises a half-bridge circuit and a logic control circuit;

[0013] The logic control circuit in one of the two half-bridge drive circuits is connected to the output end of the first inverter, the output end of the signal input detection protection module and the half-bridge circuit; the logic control circuit in the other of the two half-bridge drive circuits is connected to the output end of the second inverter, the output end of the signal input detection protection module and the half-bridge circuit; the logic control circuit is used to turn on the half-bridge circuit according to the work enable signal and the RF drive signal;

[0014] The half-bridge circuit is connected to the main full-bridge amplifier module and the first working power supply, and is used to connect the first working power supply when enabled to generate the amplified RF drive signal.

[0015] Optionally, the half-bridge circuit comprises:

[0016] A first effect tube, wherein the drain of the first effect tube is connected to the first working power supply, the gate of the first effect tube is connected to the output end of the logic control circuit, and the source of the first effect tube is connected to the main full-bridge amplifier module;

[0017] a second effect tube, wherein the drain of the second effect tube is connected to the source of the first effect tube and the main full-bridge amplifier module, the gate of the second effect tube is connected to the output end of the logic control circuit, and the source of the first effect tube is grounded;

[0018] The half-bridge circuit is used to generate the amplified RF driving signal when the first effect tube and the second effect tube are both turned on.

[0019] Optionally, the logic control circuit includes: a third inverter, a first AND gate logic device, a fourth inverter and a second AND gate logic device; wherein,

[0020] The third inverter input terminal of one of the two logic control circuits is connected to the output terminal of the second inverter, and the third inverter input terminal of the other of the two logic control circuits is connected to the output terminal of the first inverter;

[0021] A first AND gate logic device, wherein a first input end of the first AND gate logic device is connected to an output end of the third inverter, a second input end of the first AND gate logic device is connected to an output end of the signal input detection protection module, and an output end of the first AND gate logic device is connected to a gate of the first effect tube;

[0022] a fourth inverter, wherein an input terminal of the fourth inverter is connected to an output terminal of the third inverter;

[0023] A second AND gate logic device, wherein the first input end of the second AND gate logic device is connected to the output end of the fourth inverter, the second input end of the second AND gate logic device is connected to the output end of the signal input detection protection module, and the output end of the second AND gate logic device is connected to the gate of the second effect tube.

[0024] Optionally, the half-bridge driving circuit further includes:

[0025] A first voltage-dividing resistor is connected in series between the logic control circuit and the half-bridge circuit.

[0026] Optionally, the radio frequency driving circuit further includes:

[0027] An isolation driving module, located between the primary full-bridge driving amplifier module and the main full-bridge amplifier module, and used to isolate the amplified RF driving signal from the RF power;

[0028] The signal input detection protection module is connected to the isolation driving module.

[0029] Optionally, the isolation driving module includes an isolation transformer and an enable sampling circuit;

[0030] The primary side of the isolation transformer is connected to the first-level full-bridge drive amplifier module, the secondary side of the isolation transformer is connected to the enable sampling circuit input end and the main full-bridge amplifier module input end, and the enable sampling circuit output end is connected to the signal input detection protection module.

[0031] Optionally, the enabling sampling circuit includes:

[0032] A second voltage-dividing resistor in contact with two ends of the secondary side of the isolation transformer;

[0033] A first diode, wherein a cathode of the first diode is connected to one end of the second voltage-dividing resistor, an anode of the first diode is connected to a feedback interface, the feedback interface is connected to the signal input detection protection module, and the feedback interface is used to detect the amplified RF drive signal.

[0034] Optionally, the signal input module has an enable input interface, the enable input interface is used to output the initial enable signal, and the signal input detection protection module includes: a third field effect transistor, a fourth field effect transistor and an operational amplifier;

[0035] The drain of the third field effect tube is connected to the non-inverting input terminal of the operational amplifier and the second working power supply, and the gate of the third field effect tube is connected to the enable input interface; the source of the third field effect tube is grounded;

[0036] The gate of the fourth field effect tube is connected to the enable input interface and the output end of the operational amplifier, the drain of the fourth field effect tube is connected to the enable output interface, and the source of the fourth field effect tube is grounded;

[0037] The enable output interface is used to output the working enable signal to the first-level full-bridge drive amplifier module; the operational amplifier is used to send a high-level signal or a low-level signal to the fourth field effect tube based on the comparison between the amplified RF drive signal and the second working power supply when receiving the amplified RF drive signal; the fourth field effect tube is used to turn off the fourth field effect tube when the signal output from the output end of the operational amplifier is the same as the potential of the initial enable signal, and turn on the fourth field effect tube when the signal output from the output end of the operational amplifier is opposite to the potential of the initial enable signal; the third field effect tube is used to turn off when the initial enable signal is input.

[0038] Optionally, the main full-bridge amplifier module includes:

[0039] A full-bridge rectifier circuit composed of four field effect transistors, wherein the input end of the full-bridge rectifier circuit is connected to the output end of the isolation drive module;

[0040] An amplifier transformer, wherein the primary side of the amplifier transformer is connected to the first-level full-bridge drive amplifier module, and the secondary side of the amplifier transformer is connected to the full-bridge rectifier circuit, and is used to divide the amplified RF drive signal into different field effect transistors of the full-bridge rectifier circuit.

[0041] Optionally, the radio frequency driving circuit further includes:

[0042] A rectification and filtering module, whose input end is connected to the output end of the main full-bridge amplifier module, is used to perform rectification and filtering on the radio frequency power.

[0043] In the second aspect of the present invention, an embodiment of the present invention discloses a radio frequency power supply, which includes the radio frequency drive circuit, power amplifier and radio frequency power supply sensor as described above, wherein the output end of the radio frequency drive circuit is connected to the input end of the power amplifier; the output end of the power amplifier is connected to the input end of the radio frequency power supply sensor; the radio frequency power supply sensor is used to detect the radio frequency power.

[0044] In the third aspect of the present invention, an embodiment of the present invention discloses a semiconductor process equipment, which includes a radio frequency power supply, a radio frequency matcher, and a process chamber. The radio frequency power supply is the above-mentioned radio frequency power supply, the radio frequency power supply is used to generate radio frequency power, and the radio frequency matcher is used to load the radio frequency power to the process chamber to excite the process gas in the process chamber to form plasma; the process chamber is used to process the wafer to be processed based on the plasma.

[0045] The embodiments of the present invention include the following advantages:

[0046] The embodiment of the present invention uses a signal input module to output a radio frequency drive signal and an initial enable signal; a first-level full-bridge drive amplifier module is connected to the output end of the signal input module, and is used to amplify the radio frequency drive signal when enabled to generate an amplified radio frequency drive signal; a main full-bridge amplifier module is connected to the output end of the first-level full-bridge drive amplifier module, and is used to amplify the amplified radio frequency drive signal to generate and output radio frequency power; a signal input detection protection module, whose input end is connected to the output end of the signal input module and the input end of the main full-bridge amplifier module, and whose output end is connected to the input end of the first-level full-bridge drive amplifier module, and is used to generate a working enable signal according to the amplified radio frequency drive signal when the initial enable signal is obtained, so as to enable the first-level full-bridge drive amplifier module. When amplifying the driving signal, a full-bridge driving method is used to amplify the driving signal by using a first-stage full-bridge driving amplifier module, and a fast switching speed is achieved by using the fast on-off capability of the full-bridge driving, so that a high-frequency RF signal can be quickly responded to, thereby improving the use scenario of higher frequency output in the RF power supply and ensuring the working stability of the RF power supply; and by setting a signal input detection protection module, when the RF work is output to the outside, a work enable signal is generated based on the detected amplified RF driving signal; the work enable signal and the RF signal are input into the first-stage full-bridge driving amplifier module at the same time to form a closed-loop control, and the first-stage full-bridge driving amplifier module maintains normal RF output, so that the main full-bridge amplifier module outputs RF power, avoids erroneous pulses due to the output of the control signal, and protects the safety of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 is a structural block diagram of an embodiment of a radio frequency driving circuit of the present invention;

[0048] Figure 2 is a structural block diagram of another radio frequency driving circuit embodiment of the present invention;

[0049] Figure 3 is a structural schematic diagram of another radio frequency driving circuit embodiment of the present invention;

[0050] Figure 4 is a schematic diagram of a half-bridge driving circuit of another radio frequency driving circuit embodiment of the present invention;

[0051] Figure 5 is a schematic diagram of an isolation transformer of another radio frequency drive circuit embodiment of the present invention;

[0052] Figure 6 It is a schematic diagram of a signal input detection protection module of another radio frequency driving circuit embodiment of the present invention;

[0053] Figure 7It is a structural block diagram of a semiconductor process equipment embodiment of the present invention. DETAILED DESCRIPTION

[0054] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0055] Reference Figure 1 , shows a structural block diagram of an embodiment of a radio frequency driving circuit of the present invention, which may specifically include the following components:

[0056] The signal input module 100 is used to output a radio frequency driving signal and an initial enabling signal;

[0057] A first-stage full-bridge drive amplifier module 200 is connected to the output end of the signal input module 100 and is used to amplify the RF drive signal to generate an amplified RF drive signal when enabled;

[0058] A main full-bridge amplifier module 300 is connected to the output end of the primary full-bridge drive amplifier module 200 and is used to amplify the amplified RF drive signal to generate and output RF power;

[0059] The signal input detection protection module 400 has an input end connected to the output end of the signal input module 100 and the input end of the main full-bridge amplifier module 300, and an output end connected to the input end of the first-level full-bridge drive amplifier module 200, and is used to generate a working enable signal according to the amplified RF drive signal when the initial enable signal is obtained, so as to enable the first-level full-bridge drive amplifier module 200.

[0060] In an embodiment of the present invention, the RF driving circuit may at least include a signal input module 100, a first-stage full-bridge driving amplifier module 200, a main full-bridge amplifier module 300, and a signal input detection protection module 400. Among them, the signal input module 100 is the signal input part of the RF driving circuit, which can receive an externally input RF driving signal and a corresponding enable signal, and output the RF driving signal and the initial enable signal to the subsequent part. The input end of the first-stage full-bridge driving amplifier module 200 is connected to the output end of the signal input module 100; it can receive the RF signal output by the signal input module 100 for processing, and can also be enabled under the drive of the signal input detection protection module 400 or the signal input module 100. In the enabled state, the first-stage full-bridge driving amplifier module 200 can amplify the RF driving signal based on the internal full-bridge circuit, that is, perform primary amplification on the RF driving signal to generate an amplified RF driving signal. The input end of the main full-bridge amplifier module 300 is connected to the output end of the primary full-bridge drive amplifier module 200, receives the amplified RF drive signal after the primary full-bridge drive amplifier module 200 amplifies, performs secondary amplification on the amplified RF drive signal, generates and outputs RF power. The input end of the signal input detection protection module 400 is connected to the output end of the signal input module 100, and the input end of the signal input detection protection module 400 is also connected to the input end of the main full-bridge amplifier module 300, that is, the signal input detection protection module 400 is located between the primary full-bridge drive amplifier module 200 and the main full-bridge amplifier module 300, and by receiving the initial enable signal, when the initial enable signal is just received, the primary full-bridge drive amplifier module 200 is connected to the signal input module 100, that is, the primary full-bridge drive amplifier module 200 is enabled to amplify the RF drive signal. After the primary full-bridge drive amplifier module 200 works, the amplified RF drive signal output by it can be detected by the signal input detection protection module 400.

[0061] When the signal input detection protection module 400 detects the presence of the amplified RF drive signal, it indicates that the first-stage full-bridge drive amplifier module 200 is working normally and can continue to work. The signal input detection protection module 400 can generate a work enable signal according to the amplified RF drive signal when the initial enable signal is obtained. The signal input detection protection module 400 enables the first-stage full-bridge drive amplifier module 200 to work based on the generated work enable signal.

[0062] The embodiment of the present invention uses a signal input module 100 to output a radio frequency drive signal and an initial enable signal; a first-level full-bridge drive amplifier module 200, which is connected to the output end of the signal input module 100 and is used to amplify the radio frequency drive signal when enabled to generate an amplified radio frequency drive signal; a main full-bridge amplifier module 300, which is connected to the output end of the first-level full-bridge drive amplifier module 200 and is used to amplify the amplified radio frequency drive signal to generate and output radio frequency power; a signal input detection protection module 400, whose input end is connected to the output end of the signal input module 100 and the input end of the main full-bridge amplifier module 300, and whose output end is connected to the input end of the first-level full-bridge drive amplifier module 200, and is used to generate a working enable signal according to the amplified radio frequency drive signal when the initial enable signal is obtained, so as to enable the first-level full-bridge drive amplifier module 200. By using the full-bridge drive mode to amplify the drive signal using the first-stage full-bridge drive amplifier module 200, and using the fast on-off capability of the full-bridge drive to achieve a fast switching speed, it is possible to quickly respond to high-frequency RF signals, and ensure the working stability of the RF power supply in the use scenario of higher frequency output in the RF power supply; and by setting the signal input detection protection module 400, during the initial operation, the RF output is turned on based on the simultaneous input of the initial enable signal and the RF signal; when the RF work is output externally, a work enable signal is generated based on the detected amplified RF drive signal, and the work enable signal replaces the initial enable signal to enable the first-stage full-bridge drive amplifier module 200 to work, thereby ensuring that the work enable signal is generated only when the output of the first-stage full-bridge drive amplifier module 200 is normal; when the work enable signal and the RF signal are simultaneously input into the first-stage full-bridge drive amplifier module 200 to form a closed-loop control, the first-stage full-bridge drive amplifier module 200 maintains the RF output, so that the main full-bridge amplifier module 300 outputs RF power, avoids the output of erroneous pulses due to the control signal, and protects the safety of the circuit.

[0063] Reference Figure 2 , shows a structural block diagram of another RF driving circuit embodiment of the present invention, which may specifically include the following components:

[0064] The signal input module 100 is used to output a radio frequency driving signal and an initial enabling signal;

[0065] A first-stage full-bridge drive amplifier module 200 is connected to the output end of the signal input module 100 and is used to amplify the RF drive signal to generate an amplified RF drive signal when enabled;

[0066] A main full-bridge amplifier module 300 is connected to the output end of the primary full-bridge drive amplifier module 200 and is used to amplify the amplified RF drive signal to generate and output RF power;

[0067] An isolation driving module 500, located between the primary full-bridge driving amplifier module 200 and the main full-bridge amplifier module 300, for isolating the amplified RF driving signal and the RF power;

[0068] A rectifier and filter module 600, whose input end is connected to the output end of the main full-bridge amplifier module 300, and is used to perform rectification and filtering processing on the RF power;

[0069] The signal input detection protection module 400 has an input end connected to the output end of the signal input module 100 and the isolation drive module 500, and an output end connected to the input end of the first-stage full-bridge drive amplifier module 200, and is used to generate a working enable signal according to the amplified RF drive signal when the initial enable signal is obtained, so as to enable the first-stage full-bridge drive amplifier module 200; in response to an abnormality of the amplified RF drive signal, shut down the first-stage full-bridge drive amplifier module 200.

[0070] In an embodiment of the present invention, the RF drive circuit of the RF power supply may include: a signal input module 100, a primary full-bridge drive amplifier module 200, an isolation drive module 500, a main full-bridge amplifier module 300, a rectifier filter module 600, and a signal input detection protection module 400. The signal input module 100, the primary full-bridge drive amplifier module 200, the isolation drive module 500, the main full-bridge amplifier module 300, and the rectifier filter module 600 are connected in sequence, that is, the output end of the signal input module 100 is connected to the input end of the primary full-bridge drive amplifier module 200, the output end of the primary full-bridge drive amplifier module 200 is connected to the input end of the isolation drive module 500, the output end of the isolation drive module 500 is connected to the input end of the main full-bridge amplifier module 300, and the output end of the main full-bridge amplifier module 300 is connected to the input end of the rectifier filter module 600.

[0071] Among them, the input end of the isolation driving module 500 is connected to the output end of the first-stage full-bridge driving amplifier module 200, receives the amplified RF driving signal after being amplified by the first-stage full-bridge driving amplifier module 200, transmits the amplified RF driving signal to the main full-bridge amplifier module 300, and separates the processing of the RF driving signal from the processing of the RF power through the isolation driving module 500 to avoid mutual influence between the two.

[0072] Among them, the signal input module 100 is the input part of the system, including the RF drive signal and the initial enable signal, and the RF power supply is controlled to output RF power through the RF drive signal and the initial enable signal. The signal input module 100 can output the RF drive signal and the initial enable signal. The first-stage full-bridge drive amplifier module 200 can perform primary amplification on the RF drive signal, generate an amplified RF drive signal, and increase the driving ability of the RF drive signal. For example, the RF drive signal can be primary amplified using a 24V voltage. Among them, the first-stage full-bridge drive amplifier module 200 is controlled by the signal input detection protection module 400, and the signal input detection protection module 400 can output a working enable signal based on the amplified RF drive signal to enable the first-stage full-bridge drive amplifier module 200, and can also shut down the first-stage full-bridge drive amplifier module 200. The isolation drive module 500 can transmit the amplified RF drive signal, and at the same time isolate the drive voltage and the RF main voltage to increase the stability and anti-interference of the circuit. The main full-bridge amplifier module 300 is controlled by the amplified RF drive signal transmitted by the isolation drive module 500. Under the control of the amplified RF drive signal, the main full-bridge amplifier module 300 is turned on or off, and generates RF power for output under the action of high voltage and high current. The rectifier and filter module 600 is the final output of the RF drive circuit; the RF power is rectified and filtered to filter out interference signals in the RF power.

[0073] In a specific implementation, the input end of the signal input detection protection module 400 can be connected to the output end of the signal input module 100 and the isolation drive module 500 to receive the output signal of the isolation drive module 500, thereby forming a feedback circuit. By detecting the amplified RF drive signal, a work enable signal is generated to determine whether the amplified RF drive signal output by the first-stage full-bridge drive amplifier module 200 is normal. When the output is normal, the first-stage full-bridge drive amplifier module 200 is continuously enabled based on the amplified RF drive signal; when the output is abnormal, the first-stage full-bridge drive amplifier module 200 is promptly turned off to avoid damage to the first-stage full-bridge drive amplifier module 200 and its subsequent devices, thereby protecting the drive circuit.

[0074] Specifically, the first-stage full-bridge driver amplifier module 200 can be enabled at the initial time when the input of the initial enable signal is valid to start the RF power processing. Then the amplified RF drive signal is detected and a work enable signal is generated. The first-stage full-bridge driver amplifier module 200 is enabled based on the work enable signal. When the amplified RF drive signal is abnormal, the first-stage full-bridge driver amplifier module 200 is turned off to protect the output of the main full-bridge amplifier module 300. Specifically, the signal feedback input terminal of the signal input module 100 can be connected to the isolation driver module 500 to collect and amplify the RF drive signal. In response to the abnormality of the amplified RF drive signal, the first-stage full-bridge driver amplifier module 200 is turned off to protect the main output.

[0075] Further, please refer to Figure 3 The signal input module 100 may include a first RF input interface IN1 and a second RF input interface IN2, and the RF driving signals between the first RF input interface IN1 and the second RF input interface IN2 have a preset phase difference. The phase difference can be set according to actual process requirements. That is, the signal input module 100 can output two RF driving signals with a preset phase difference through the first RF input interface IN1 and the second RF input interface IN2.

[0076] The first RF input interface IN1 and the second RF input interface IN2 are both connected to the input end of the first-stage full-bridge driver amplifier module 200. The first RF input interface IN1 and the second RF input interface IN2 drive a first full-bridge amplifier circuit 220 respectively through two first inverters 210. The first full-bridge amplifier circuit 220 forms a full-bridge circuit through two half-bridge amplifier parts, ensuring that the upper and lower bridge arms will not be turned on at the same time.

[0077] Specifically, the input end of the first inverter 210 is connected to the signal input module 100 for receiving the corresponding RF drive signal, and the output end of the first inverter 210 is connected to the first full-bridge amplifier circuit 220; the first full-bridge amplifier circuit 220 is used to amplify the RF drive signal when enabled to generate an amplified RF drive signal. The input signal is inverted by the first inverter 210, and the first full-bridge amplifier circuit 220 is enabled when receiving the inverted signal, and the RF drive signal is amplified to generate an amplified RF drive signal. At the same time, the first-stage full-bridge drive amplifier module 200 has a strong driving capability, which can quickly drive the main bridge arm to start and shut down, and can meet the needs of the RF power supply.

[0078] Furthermore, each first full-bridge amplifier circuit 220 includes: two half-bridge drive circuits 221 and a second inverter 222; one of the two half-bridge drive circuits 221 is connected to the output end of the first inverter 210, and the other half-bridge drive circuit 221 is connected to the output end of the first inverter 210 through the second inverter 222.

[0079] You can refer to Figure 4 , the half-bridge driving circuit 221 includes a half-bridge circuit 2211 and a logic control circuit 2212;

[0080] Among them, the logic control circuit 2212 in one of the two half-bridge drive circuits 221 is connected to the output end of the first inverter 210, the output end of the signal input detection protection module 400 and the half-bridge circuit 2211; the logic control circuit 2212 in the other half-bridge drive circuit 221 of the two half-bridge drive circuits 221 is connected to the output end of the second inverter 222, the output end of the signal input detection protection module 400 and the half-bridge circuit 2211; the logic control circuit 2212 is used to turn on the half-bridge circuit 2211 according to the work enable signal and the RF drive signal;

[0081] The half-bridge circuit 2211 is connected to the main full-bridge amplifier module 300 and the first working power supply VCC1, and is used to connect the first working power supply VCC1 when enabled to generate the amplified RF driving signal.

[0082] Specifically, the half-bridge circuit 2211 includes:

[0083] A first effect transistor Q3, wherein the drain of the first effect transistor Q3 is connected to the first working power supply VCC1, the gate of the first effect transistor Q3 is connected to the output end of the logic control circuit 2212, and the source of the first effect transistor Q3 is connected to the main full-bridge amplifier module 300;

[0084] A second effect tube Q4, wherein the drain of the second effect tube Q4 is connected to the source of the first effect tube Q3 and the main full-bridge amplifier module 300, the gate of the second effect tube Q4 is connected to the output end of the logic control circuit 2212, and the source of the first effect tube Q3 is grounded;

[0085] The first field effect transistor Q3 and the second field effect transistor Q4 form a bridge; the output end of the signal input detection protection module 400 is connected to the gate of the first field effect transistor Q3 and the gate of the second field effect transistor Q4; the half-bridge circuit 2211 is used to generate the amplified RF drive signal when the first field effect transistor Q3 and the second field effect transistor Q4 are both turned on.

[0086] The half-bridge circuit 2211 is controlled to be turned on by two logic control circuits 2212 with EN1 (enable) control. The logic control circuit 2212 includes: a third inverter U3, a first AND gate logic device U1, a fourth inverter U4 and a second AND gate logic device U2;

[0087] The input end of the third inverter U3 of one of the two logic control circuits 2212 is connected to the output end of the second inverter 222, and the input end of the third inverter U3 of the other of the two logic control circuits 2212 is connected to the output end of the first inverter 210;

[0088] A first AND gate logic device U1, wherein a first input end of the first AND gate logic device U1 is connected to an output end of the third inverter U3, a second input end of the first AND gate logic device U1 is connected to an output end of the signal input detection protection module 400, and an output end of the first AND gate logic device U1 is connected to a gate of the first effect tube Q3, and is used to receive the work enable signal, and perform an AND operation on the work enable signal and the RF drive signal to control a conduction state of the first effect tube Q3;

[0089] A fourth inverter U4, wherein an input end of the fourth inverter U4 is connected to an output end of the third inverter U3;

[0090] A second AND gate logic device U2, wherein the first input end of the second AND gate logic device U2 is connected to the output end of the fourth inverter U4, the second input end of the second AND gate logic device U2 is connected to the output end of the signal input detection protection module 400, and the output end of the second AND gate logic device U2 is connected to the gate of the second effect tube Q4, for receiving the work enable signal, and performing an AND operation on the work enable signal and the RF drive signal to control the conduction state of the second effect tube Q4.

[0091] The bridge is composed of the first field effect transistor Q3 and the second field effect transistor Q4. The output end of the signal input detection protection module 400 is connected to the gate of the first field effect transistor Q3 and the gate of the second field effect transistor Q4 respectively. The work enable signal is received by the EN1 port, and the RF drive signal is output to the first AND gate logic device U1 through the third inverter U3, and is output to the second AND gate logic device U2 through the fourth inverter U4. At this time, based on the operation logic of the AND logic, when both ends of the first AND gate logic device U1 are high level, the first AND gate logic device U1 outputs a high level, and correspondingly, since the second AND gate logic device U2 receives the reverse RF signal and the work enable signal, the second AND gate logic device U2 outputs a low level, and the first field effect transistor Q3 and the second field effect transistor Q4 are opened and closed accordingly, thereby outputting the RF drive signal of the corresponding phase. Since the field effect tube has a large pressure range and a large input current, the field effect tube has good high-frequency characteristics and fast conduction and cutoff speeds. Through the field effect tube, it can respond quickly in high-frequency and high-voltage scenarios.

[0092] In addition, in order to filter out interference signals, an inductor-capacitor filter circuit may be provided in the half-bridge circuit 2211, and filtering may be performed through the inductor-capacitor filter circuit. The filtering frequency may be adjusted by adjusting the inductance value or the capacitance value in the inductor-capacitor filter circuit. In order to ensure the voltage range of the logic control circuit 2212, a first voltage-dividing resistor R1 may be provided between the logic control circuit 2212 and the half-bridge circuit 2211, and the voltage may be divided using the first voltage-dividing resistor R1.

[0093] Furthermore, the isolation driving module 500 includes: an isolation transformer and an enabling sampling circuit,

[0094] The primary side of the isolation transformer is connected to the first-level full-bridge drive amplifier module 200, the secondary side of the isolation transformer is connected to the enable sampling circuit input end and the main full-bridge amplifier module 300 input end, and the enable sampling circuit output end is connected to the signal input detection protection module 400.

[0095] The amplified RF drive signal of the primary full-bridge driver amplifier module 200 is isolated from the RF power of the main full-bridge amplifier module 300 by an isolation transformer to avoid interference between the signals. The enabling sampling circuit detects on the secondary side of the isolation transformer to determine whether the output is normal.

[0096] like Figure 5 The output end of the first-stage full-bridge driver amplifier module 200 is connected to an isolation transformer, that is, the primary side of the isolation transformer is connected to the output of the first-stage full-bridge driver amplifier module 200, and the output of the isolation transformer is two opposite windings, which are respectively connected to the upper and lower bridge arm field effect transistors of the main full-bridge amplifier module 300 to prevent the upper and lower bridges of the main full-bridge amplifier module 300 from being turned on at the same time. At the same time, the output voltage of the isolation transformer will not burn out the field effect transistors of the full-bridge bridge arms.

[0097] Furthermore, the enabling sampling circuit comprises:

[0098] A second voltage-dividing resistor in contact with two ends of the secondary side of the isolation transformer;

[0099] A first diode, wherein the cathode of the first diode is connected to one end of the second voltage-dividing resistor, the anode of the first diode is connected to a feedback interface, the feedback interface is connected to the signal input detection protection module 400, and the feedback interface is used to detect the amplified RF drive signal.

[0100] like Figure 5As shown, the second voltage-dividing resistor R2 is connected to both ends of the secondary side of the isolation transformer, thereby dividing the voltage of the amplified RF drive signal so that the sampled voltage range meets the requirements. Then, a first diode D3 is set at one end of the second voltage-dividing resistor R2, the second voltage-dividing resistor R2 is connected to the cathode of the first diode D3, the anode of the first diode D3 is connected to the feedback interface Readback, and the feedback interface Readback is connected to the signal input detection protection module 400, so that the amplified RF drive signal can be transmitted to the signal input detection protection module 400 by the feedback interface Readback, and the signal input detection protection module 400 performs signal recognition and generates a work enable signal.

[0101] Furthermore, a filter circuit can be set at the feedback interface, referring to Figure 5 A capacitor C3 is connected to the feedback interface, and filtering is performed based on the capacitor C3. A second diode D4 is also provided to protect the signal of the feedback interface Readback.

[0102] Further, refer to Figure 5 The isolation driving module 500 may further include a third diode D5 and a fourth diode D6.

[0103] Furthermore, the main full-bridge amplifier module 300 includes: a full-bridge rectifier circuit composed of four field effect transistors, and the input end of the full-bridge rectifier circuit is connected to the output end of the isolation drive module 500;

[0104] An amplifier transformer, the primary side of which is connected to the first-stage full-bridge drive amplifier module 200, and the secondary side of which is connected to the full-bridge rectifier circuit, for dividing the amplified RF drive signal into different field effect transistors of the full-bridge rectifier circuit.

[0105] The main full-bridge amplifier module 300 is a full-bridge rectifier circuit composed of four field effect transistors and an amplifier transformer. The four field effect transistors are connected to the secondary side of the amplifier transformer to rectify and output the input current transmitted from the secondary side of the amplifier transformer.

[0106] In an optional embodiment of the present invention, the signal input module 100 has an enable input interface, and the enable input interface is used to output the initial enable signal. The signal input detection protection module 400 includes: a third field effect transistor Q4, a fourth field effect transistor Q5 and an operational amplifier U4.

[0107] The drain of the third field effect transistor Q4 is connected to the non-inverting input terminal of the operational amplifier U4 and the second working power supply VCC2, and the gate of the third field effect transistor Q4 is connected to the enable input interface; the source of the third field effect transistor Q4 is grounded;

[0108] The gate of the fourth field effect transistor Q5 is connected to the enable input interface and the output end of the operational amplifier U4, the drain of the fourth field effect transistor Q5 is connected to the enable output interface, and the source of the fourth field effect transistor Q5 is grounded;

[0109] The enable output interface is used to output the working enable signal to the first-level full-bridge drive amplifier module 200; the operational amplifier U4 is used to send a high-level signal or a low-level signal to the fourth field effect transistor Q5 based on the comparison between the amplified RF drive signal and the second working power supply VCC2 when receiving the amplified RF drive signal; the fourth field effect transistor Q5 is used to turn off the fourth field effect transistor Q5 when the signal output from the output end of the operational amplifier is the same as the potential of the initial enable signal, and turn on the fourth field effect transistor Q5 when the signal output from the output end of the operational amplifier is opposite to the potential of the initial enable signal; the third field effect transistor Q4 is used to turn off when the initial enable signal is input.

[0110] In the embodiment of the present invention, the signal input detection protection module 400 may mainly include a third field effect transistor Q4, a fourth field effect transistor Q5 and an operational amplifier U4. The gate of the third field effect transistor Q4 is connected to the enable input interface, the source of the third field effect transistor Q4 is grounded, and the drain of the third field effect transistor Q4 is connected to the non-inverting input terminal of the operational amplifier.

[0111] The gate of the fourth field effect transistor Q5 is connected to the enable input interface and the output end of the operational amplifier, the source of the fourth field effect transistor Q5 is grounded, the drain of the fourth field effect transistor Q5 is connected to the first-level full-bridge drive amplifier module 200, and the inverting input end of the operational amplifier is connected to the isolation drive module 500.

[0112] When the operational amplifier U4 receives the amplified RF drive signal, it compares the input level of the amplified RF drive signal with the level of the second working power supply. When the input level of the amplified RF drive signal is greater than the level of the second working power supply, it outputs one of a high level signal or a low level signal. When the input level of the amplified RF drive signal is not greater than the level of the second working power supply, it outputs the other of a high level signal or a low level signal. The specific output level can be determined according to actual conditions, and the embodiment of the present invention does not specifically limit this. The output high level signal or low level signal is sent to the fourth field effect tube Q5. When the signal output by the fourth field effect tube Q5 at the output end of the operational amplifier U4 is the same as the potential of the initial enable signal, that is, the potential of the initial enable signal and the signal output by the output end of the operational amplifier U4 are the same, the fourth field effect tube Q5 can be turned off, thereby driving the first-stage full-bridge drive amplifier module 200. When the signal output at the output end of the operational amplifier U4 is opposite to the potential of the initial enable signal, the fourth field effect tube Q5 is turned on; the third field effect tube Q4 is used to turn off when the initial enable signal is input, thereby turning off the first-stage full-bridge drive amplifier module 200. The same potential means that the signal output from the output terminal of the operational amplifier U4 and the initial enable signal are both high level signals or the signal output from the output terminal of the operational amplifier U4 and the initial enable signal are both low level signals. The different potential means that one of the signal output from the output terminal of the operational amplifier U4 and the initial enable signal is a high level signal and the other is a low level signal.

[0113] Taking the second working power supply VCC2 as 5V as an example, combined with Figure 6 When a normal RF drive signal is input, the isolation transformer will output a high level, the current flowing from Readback to the resistor R1 will decrease, the voltage at the reverse input terminal of the operational amplifier U4 will increase, the output terminal of the operational amplifier U4 outputs 0V, and EN1 outputs a high level, so that the driver EN1 is pulled high; that is, the work enable signal is received to enable the first-stage full-bridge drive amplifier module 200. On the contrary, when there is no input of the RF drive signal, the transformer outputs a low level, the current flowing from Readback to the resistor R1 will increase, and the voltage at the reverse input terminal of the operational amplifier U4 will decrease, so that the output terminal of the operational amplifier outputs 5V, EN1 outputs a low level, and the first-stage full-bridge drive amplifier module 200 is turned off. By detecting the level change of the output of the isolation drive module 500 and using the operational amplifier U4 for pure hardware control, the circuit has a fast response speed and high stability; and protects the subsequent power and main output.

[0114] In addition, the signal input detection protection module 400 may also include a working indication circuit, which includes an indicator light L1, a voltage dividing resistor R11 and a diode D7. When the fourth field effect tube Q5 is turned on, the first-stage full-bridge driving amplifier module 200 can be turned on, and the diode D7 is turned on at the same time, so that the indicator light L1 is turned on, thereby emitting light, and the user can observe whether the RF power supply is working normally through the light.

[0115] The signal input detection protection module 400 may also include a filter circuit to filter the initial enable signal to avoid abnormal startup. The filter circuit is composed of a resistor R2 and a capacitor C3 connected in series. The filter frequency is determined by the resistance value of the resistor R2 and the capacitance value of the capacitor C3 to filter out interference signals in the input initial enable signal.

[0116] The signal input detection protection module 400 may further include a voltage stabilizing circuit, which includes a voltage stabilizing diode D2 connected in series before the fourth field effect transistor Q5 and a voltage stabilizing diode D1 connected in series before the third field effect transistor Q4; when the circuit where the fourth field effect transistor Q5 is located oscillates, the voltage stabilizing diode D2 absorbs a certain voltage, thereby protecting the fourth field effect transistor Q5. When the circuit where the fourth field effect transistor Q4 is located oscillates, the voltage stabilizing diode D1 absorbs a certain voltage, thereby protecting the fourth field effect transistor Q4.

[0117] An embodiment of the present invention also discloses a radio frequency power supply, which includes the radio frequency power supply driving circuit, power amplifier and radio frequency power supply sensor as described above, wherein the output end of the driving device is connected to the input end of the power amplifier; the output end of the power amplifier is connected to the input end of the radio frequency power supply sensor; and the radio frequency power supply sensor is used to detect the radio frequency power.

[0118] Reference Figure 7 , showing that an embodiment of the present invention also discloses a semiconductor process equipment, the semiconductor process equipment includes a radio frequency power supply 720, a radio frequency matcher 730, and a process chamber 710, the radio frequency power supply 720 is the above-mentioned radio frequency power supply, the radio frequency power supply 720 is used to output a DC voltage to the electrode of the process chamber 710, the radio frequency matcher 730 is used to load the radio frequency power to the process chamber 710 to excite the process gas in the process chamber 710 to form plasma; the process chamber 710 is used to process the wafer to be processed based on the plasma.

[0119] The process chamber 710 includes a cathode (metal target) 711 and an anode (sputtered object) 712. The positive electrode of the RF power supply 720 is grounded and connected to the anode (sputtered object) 712 of the process chamber 710 through the RF matcher 730, and the negative electrode of the RF power supply 720 is connected to the cathode (metal target) 711 of the process chamber 710. After the positive and negative electrodes of the RF power supply 72 are connected to the process chamber 710, a plasma is generated by using a DC high voltage, and the generated plasma rushes toward the cathode (metal target) 711. The metal atoms of the cathode (metal target) 711 are sputtered out and attached to the anode (sputtered object) 712, completing the thin film deposition of the anode (sputtered object).

[0120] When the process requires increased RF power, the power amplifier module in the RF power supply 720 can output multiple RF powers at the same time, and the RF power synthesis device in the RF power supply 720 synthesizes the above-mentioned multiple RF powers and outputs a synthesized RF power to the process chamber.

[0121] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0122] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0123] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0124] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0125] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0126] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0127] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0128] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0129] The above is a detailed introduction to a radio frequency power drive circuit, a radio frequency power supply and a semiconductor process equipment provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A radio frequency driving circuit, characterized in that: include: A signal input module, used for outputting a radio frequency driving signal and an initial enabling signal; A first-stage full-bridge drive amplifier module is connected to the output end of the signal input module and is used to amplify the RF drive signal to generate an amplified RF drive signal when enabled; A main full-bridge amplifier module, connected to the output end of the first-stage full-bridge drive amplifier module, for amplifying the amplified RF drive signal, generating and outputting RF power; A signal input detection protection module, whose input end is connected to the output end of the signal input module and the input end of the main full-bridge amplifier module, and whose output end is connected to the input end of the first-level full-bridge drive amplifier module, is used to generate a working enable signal according to the amplified RF drive signal when the initial enable signal is obtained, so as to enable the first-level full-bridge drive amplifier module.

2. The radio frequency driving circuit according to claim 1, characterized in that: The signal input detection protection module is also used to shut down the first-stage full-bridge drive amplification module in response to the amplified RF drive signal being abnormal.

3. The radio frequency driving circuit according to claim 1, characterized in that: The signal input module is used to output two RF drive signals with a phase difference, and the RF drive circuit includes two first-level full-bridge drive amplifier modules, and the two first-level full-bridge drive amplifier modules are respectively used to access the RF drive signals with different phases; The first-stage full-bridge drive amplifier module includes: a first full-bridge amplifier circuit and a first inverter; The input end of the first inverter is connected to the signal input module for receiving the corresponding RF drive signal, and the output end of the first inverter is connected to the first full-bridge amplifier circuit; the first full-bridge amplifier circuit is used to amplify the RF drive signal when enabled to generate the amplified RF drive signal.

4. The radio frequency driving circuit according to claim 3, characterized in that: The first full-bridge amplifier circuit includes two half-bridge drive circuits and a second inverter; one of the two half-bridge drive circuits is connected to the output end of the first inverter, and the other half-bridge drive circuit is connected to the output end of the first inverter through the second inverter; The half-bridge driving circuit comprises a half-bridge circuit and a logic control circuit; The logic control circuit in one of the two half-bridge drive circuits is connected to the output end of the first inverter, the output end of the signal input detection protection module and the half-bridge circuit; The logic control circuit in the other half-bridge drive circuit of the two half-bridge drive circuits is connected to the output end of the second inverter, the output end of the signal input detection protection module and the half-bridge circuit; the logic control circuit is used to turn on the half-bridge circuit according to the work enable signal and the RF drive signal; The half-bridge circuit is connected to the main full-bridge amplifier module and the first working power supply, and is used to connect the first working power supply when enabled to generate the amplified RF drive signal.

5. The radio frequency driving circuit according to claim 4, characterized in that: The half-bridge circuit comprises: A first effect tube, wherein the drain of the first effect tube is connected to the first working power supply, the gate of the first effect tube is connected to the output end of the logic control circuit, and the source of the first effect tube is connected to the main full-bridge amplifier module; a second effect tube, wherein the drain of the second effect tube is connected to the source of the first effect tube and the main full-bridge amplifier module, the gate of the second effect tube is connected to the output end of the logic control circuit, and the source of the first effect tube is grounded; The half-bridge circuit is used to generate the amplified RF driving signal when the first effect tube and the second effect tube are both turned on.

6. The radio frequency driving circuit according to claim 5, characterized in that: The logic control circuit includes: a third inverter, a first AND gate logic device, a fourth inverter and a second AND gate logic device; wherein, The third inverter input terminal of one of the two logic control circuits is connected to the output terminal of the second inverter, and the third inverter input terminal of the other of the two logic control circuits is connected to the output terminal of the first inverter; A first AND gate logic device, wherein a first input end of the first AND gate logic device is connected to an output end of the third inverter, a second input end of the first AND gate logic device is connected to an output end of the signal input detection protection module, and an output end of the first AND gate logic device is connected to a gate of the first effect tube; a fourth inverter, wherein an input terminal of the fourth inverter is connected to an output terminal of the third inverter; A second AND gate logic device, wherein the first input end of the second AND gate logic device is connected to the output end of the fourth inverter, the second input end of the second AND gate logic device is connected to the output end of the signal input detection protection module, and the output end of the second AND gate logic device is connected to the gate of the second effect tube.

7. The radio frequency driving circuit according to claim 6, characterized in that: The half-bridge driving circuit also includes: A first voltage-dividing resistor is connected in series between the logic control circuit and the half-bridge circuit.

8. The radio frequency driving circuit according to claim 1 or 2, characterized in that: The radio frequency driving circuit further includes: An isolation driving module, located between the primary full-bridge driving amplifier module and the main full-bridge amplifier module, and used to isolate the amplified RF driving signal from the RF power; The signal input detection protection module is connected to the isolation driving module.

9. The radio frequency driving circuit according to claim 8, characterized in that: The isolation driving module includes an isolation transformer and an enabling sampling circuit; The primary side of the isolation transformer is connected to the first-level full-bridge drive amplifier module, the secondary side of the isolation transformer is connected to the enable sampling circuit input end and the main full-bridge amplifier module input end, and the enable sampling circuit output end is connected to the signal input detection protection module.

10. The radio frequency driving circuit according to claim 9, characterized in that: The enabling sampling circuit comprises: A second voltage-dividing resistor in contact with two ends of the secondary side of the isolation transformer; A first diode, wherein the cathode of the first diode is connected to one end of the second voltage-dividing resistor, the anode of the first diode is connected to a feedback interface, the feedback interface is connected to the signal input detection protection module, and the feedback interface is used to detect the amplified RF drive signal.

11. The radio frequency driving circuit according to claim 10, characterized in that: The signal input module has an enable input interface, and the enable input interface is used to output the initial enable signal. The signal input detection protection module includes: a third field effect transistor, a fourth field effect transistor and an operational amplifier; The drain of the third field effect tube is connected to the non-inverting input terminal of the operational amplifier and the second working power supply, and the gate of the third field effect tube is connected to the enable input interface; the source of the third field effect tube is grounded; The gate of the fourth field effect tube is connected to the enable input interface and the output end of the operational amplifier, the drain of the fourth field effect tube is connected to the enable output interface, and the source of the fourth field effect tube is grounded; The enable output interface is used to output the working enable signal to the first-level full-bridge drive amplifier module; the operational amplifier is used to send a high-level signal or a low-level signal to the fourth field effect tube based on the comparison between the amplified RF drive signal and the second working power supply when receiving the amplified RF drive signal; the fourth field effect tube is used to turn off the fourth field effect tube when the signal output from the output end of the operational amplifier is the same as the potential of the initial enable signal, and turn on the fourth field effect tube when the signal output from the output end of the operational amplifier is opposite to the potential of the initial enable signal; the third field effect tube is used to turn off when the initial enable signal is input.

12. The radio frequency driving circuit according to claim 8, characterized in that: The main full-bridge amplifier module comprises: A full-bridge rectifier circuit composed of four field effect transistors, wherein the input end of the full-bridge rectifier circuit is connected to the output end of the isolation drive module; An amplifier transformer, wherein the primary side of the amplifier transformer is connected to the first-level full-bridge drive amplifier module, and the secondary side of the amplifier transformer is connected to the full-bridge rectifier circuit, and is used to divide the amplified RF drive signal into different field effect transistors of the full-bridge rectifier circuit.

13. The radio frequency driving circuit according to claim 1 or 2, characterized in that: The radio frequency driving circuit further includes: A rectification and filtering module, whose input end is connected to the output end of the main full-bridge amplifier module, is used to perform rectification and filtering on the radio frequency power.

14. A radio frequency power supply, characterized in that: The RF power supply includes the RF driving circuit, power amplifier and RF power supply sensor as described in any one of claims 1 to 13, the RF driving circuit output end is connected to the power amplifier input end; the power amplifier output end is connected to the RF power supply sensor input end; the RF power supply sensor is used to detect the RF power.

15. A semiconductor process equipment, characterized in that: The semiconductor process equipment comprises a radio frequency power supply, a radio frequency matcher, and a process chamber, wherein the radio frequency power supply is the radio frequency power supply according to claim 14, the radio frequency power supply is used to generate radio frequency power, and the radio frequency matcher is used to load the radio frequency power to the process chamber to excite the process gas in the process chamber to form plasma; The process chamber is used for processing a wafer to be processed based on the plasma.

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