Film-like adhesive, dicing die-bonded film, and semiconductor device and method for manufacturing same

Abstract

Disclosed is a film-like adhesive which contains a thermosetting resin component and an elastomer, and may further contain an inorganic filler. The content of the elastomer is 18% by mass or more based on the total amount of the film-like adhesive. The content of the inorganic filler is 0-25% by mass based on the total amount of the film-like adhesive. The storage modulus at 150 DEG C of a cured product obtained by curing the film-like adhesive at 140 DEG C for 30 minutes is 80 MPa or more. The thickness of the film-like adhesive is 15 [mu] m or less.

Description

Technical Field

[0001] The present invention relates to a film adhesive, a dicing / die-bonding integrated film, a semiconductor device and a manufacturing method thereof. Background Art

[0002] In recent years, stacked MCP (Multi Chip Package) in which semiconductor chips are stacked in multiple stages has become popular and is used as memory semiconductor packages for mobile phones and portable audio devices. In addition, with the multifunctionality of mobile phones, the speed, density, and integration of semiconductor packages are also being promoted.

[0003] As a method for manufacturing a semiconductor device, a dicing die bonding integrated film having an adhesive layer and a pressure-sensitive adhesive layer is generally used, and then the semiconductor wafer, the adhesive layer, and a part of the pressure-sensitive adhesive layer are cut to separate them into pieces (a semiconductor wafer back-side bonding method). For example, patent documents 1 and 2 disclose film-like adhesives used for the adhesive layer in this method.

[0004] Previous technical literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2013 / 133275

[0007] Patent Document 2: International Publication No. 2020 / 013250 Summary of the invention

[0008] Technical issues to be solved by the invention

[0009] In a stacked MCP, since semiconductor chips are stacked in multiple stages, the film adhesive used to cut the die-bonding integrated film is required to have sufficient fracture strength when forming a thin film (e.g., thickness of 15 μm or less). If the film adhesive has sufficient fracture strength, it tends to have excellent processability when forming a thin film (e.g., film cutting performance for die-cutting into a specified shape).

[0010] In addition, in recent years, in semiconductor packages, in semiconductor chips composed of a circuit layer and a semiconductor layer, there is a tendency for the circuit layer to become thicker and the semiconductor layer to become thinner. In such semiconductor packages, for example, when the circuit layer of the semiconductor chip is connected to the electrode of the substrate by wire bonding with a bonding wire, chip cracks sometimes occur. It is speculated that such chip cracks are caused by the vibration during wire bonding due to the thinning and brittleness of the semiconductor layer. Therefore, it is also required that the film adhesive used for cutting the integrated film for die bonding can suppress the occurrence of chip cracks.

[0011] Therefore, a main object of the present invention is to provide a film-like adhesive which has excellent processability when formed into a thin film and can suppress the occurrence of chip cracks.

[0012] Means for solving technical problems

[0013] The inventors of the present invention conducted in-depth research to solve the above-mentioned problems and found that by making the content of the elastomer in the film adhesive above a prescribed range, making the content of the inorganic filler in the film adhesive below a prescribed range, and making the storage modulus of the cured film adhesive above a prescribed range, the processability during thin film formation can be improved, and the occurrence of chip cracking can be suppressed, thereby completing the invention of the present invention.

[0014] The present invention provides a film adhesive as described in [1] to [8], a dicing die bonding integrated film as described in [9], a semiconductor device as described in

[10] and

[11] , and a semiconductor device as described in

[12] and

[13] .

[0015] [1] A film-like adhesive comprising a thermosetting resin component and an elastomer, and may further comprise an inorganic filler, wherein:

[0016] The content of the elastomer is 18% by mass or more based on the total amount of the film adhesive.

[0017] Based on the total amount of the film adhesive, the content of the inorganic filler is 0 to 25% by mass.

[0018] The film adhesive is cured at 140° C. for 30 minutes to obtain a cured product having a storage modulus of 80 MPa or more at 150° C.,

[0019] The film adhesive has a thickness of 15 μm or less.

[0020] [2] The film-like adhesive according to [1], wherein:

[0021] The content of the elastomer is 18 to 35% by mass based on the total amount of the film adhesive.

[0022] [3] The film-like adhesive according to [1] or [2], wherein:

[0023] The content of the inorganic filler is 0 to 3% by mass based on the total amount of the film adhesive.

[0024] [4] The film-like adhesive according to any one of [1] to [3], wherein

[0025] The storage modulus of a cured product at 30° C. after curing the film adhesive at 140° C. for 30 minutes is 2000 MPa or less.

[0026] [5] The film-like adhesive according to any one of [1] to [4], wherein

[0027] The thermosetting resin component includes epoxy resin and phenolic resin.

[0028] [6] The film-like adhesive according to any one of [1] to [5], wherein

[0029] The glass transition temperature of the elastomer is 0-30°C.

[0030] [7] The film adhesive according to any one of [1] to [6], which is used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked.

[0031] [8] The film-like adhesive according to [7], wherein:

[0032] The semiconductor device is a three-dimensional NAND memory.

[0033] [9] A dicing die bonding integrated film comprising, in this order, a substrate layer, a pressure-sensitive adhesive layer, and an adhesive layer formed of the film-like adhesive described in any one of [1] to [6].

[0034]

[10] A semiconductor device comprising:

[0035] 1st semiconductor chip;

[0036] a supporting member for mounting the first semiconductor chip; and

[0037] The cured product of the film adhesive according to any one of [1] to [6] is provided between the first semiconductor chip and the support member to bond the first semiconductor chip and the support member.

[0038]

[11] The semiconductor device according to

[10] , further comprising a second semiconductor chip that is stacked on the surface of the first semiconductor chip and is different from the first semiconductor chip.

[0039]

[12] A method for manufacturing a semiconductor device, comprising the following steps:

[0040] Attaching the adhesive layer of the dicing die bonding integrated film described in [9] to a semiconductor wafer;

[0041] Manufacturing a plurality of semiconductor chips with adhesive sheets by dicing the semiconductor wafer with the adhesive layer attached thereto; and

[0042] A first semiconductor chip with an adhesive sheet, which is the semiconductor chip with an adhesive sheet and includes a first semiconductor chip and a first adhesive sheet, is bonded to a supporting member via an adhesive sheet.

[0043]

[13] The method for manufacturing a semiconductor device according to

[12] , further comprising the following steps:

[0044] A second semiconductor chip with an adhesive sheet having a second semiconductor chip and the second adhesive sheet as the semiconductor chip with an adhesive sheet is bonded to the surface of the first semiconductor chip among the first semiconductor chips with an adhesive sheet bonded to the supporting member via a second adhesive sheet.

[0045] Effects of the Invention

[0046] According to the present invention, a film adhesive is provided that has excellent processability when forming a thin film and can suppress the occurrence of chip cracks. Certain forms of film adhesives can also suppress the warping of semiconductor devices (semiconductor packages). Furthermore, according to the present invention, a dicing die bonding integrated film using such a film adhesive, as well as a semiconductor device and a method for manufacturing the same are provided. Furthermore, according to the present invention, a method for manufacturing a semiconductor device using such a dicing die bonding integrated film is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 It is a schematic cross-sectional view showing one embodiment of the film-like adhesive.

[0048] Figure 2 It is a schematic cross-sectional view showing one embodiment of a dicing die bonding integrated film.

[0049] Figure 3 It is a schematic cross-sectional view showing one embodiment of a semiconductor device.

[0050] Figure 4It is a schematic cross-sectional view showing another embodiment of a semiconductor device.

[0051] Figure 5 It is a schematic cross-sectional view showing another embodiment of a semiconductor device.

[0052] Figure 6 It is a figure which shows the shape of the test piece for measuring the breaking strength. DETAILED DESCRIPTION

[0053] Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, except for the cases specifically indicated, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in each figure are conceptual sizes, and the relative relationship between the sizes of the constituent elements is not limited to the relationship shown in each figure.

[0054] The same is true for the numerical value and its range in the present invention, and the present invention is not limited. In this specification, the numerical range represented by "~" represents the range in which the numerical values ​​before and after "~" are respectively included as the minimum value and the maximum value. In the numerical range recorded in stages in this specification, the upper limit or lower limit recorded in one numerical range can also be replaced by the upper limit or lower limit of the numerical range recorded in other stages. And, in the numerical range recorded in this specification, the upper limit or lower limit of the numerical range can also be replaced by the value shown in the embodiment. And, the upper limit and lower limit recorded separately can be combined arbitrarily. And, "A or B" includes either A and B, and both can be included. And, the materials exemplified below can be used alone as long as they are not particularly specified, or can be used in combination of more than two. When there are a variety of substances belonging to each component in the composition, as long as there is no special description, the content of each component in the composition refers to the total amount of the multiple substances present in the composition.

[0055] In the present specification, (meth)acrylate refers to acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl, (meth)acrylic copolymer, etc.

[0056] [Film Adhesive]

[0057] Figure 1 It is a schematic cross-sectional view showing one embodiment of the film-like adhesive. Figure 1 The film-like adhesive 1 shown may be thermosetting, or may be an adhesive that is in a semi-cured (B stage) state and can become a fully cured (C stage) state after a curing treatment.

[0058] The film adhesive 1 satisfies the following conditions.

[0059] The storage modulus at 150°C after curing at 140°C for 30 minutes is 80 MPa or more.

[0060] ·Thickness less than 15μm

[0061] The film adhesive 1 has a storage modulus of 80 MPa or more at 150°C after curing at 140°C for 30 minutes, and may be 85 MPa or more, 90 MPa or more, 95 MPa or more, 100 MPa or more, 105 MPa or more, 110 MPa or more, 115 MPa or more, 120 MPa or more, 125 MPa or more, or 130 MPa or more. If the storage modulus is 80 MPa or more, the brittleness of the semiconductor chip caused by the thin film can be compensated, and the chip cracking can be suppressed. The upper limit of the storage modulus is not particularly limited, for example, it can be 500 MPa or less, 300 MPa or less, 250 MPa or less, or 200 MPa or less.

[0062] The storage modulus of the film adhesive 1 at 30°C after curing at 140°C for 30 minutes can be 2000MPa or less, or 1800MPa or less, 1600MPa or less, 1400MPa or less, or 1200MPa or less. If the storage modulus is 2000MPa or less, the film adhesive can be more easily thinned, and in the cured product of the film adhesive, the tendency to become too hard can be more fully suppressed. The lower limit of the storage modulus is not particularly limited, for example, it can be 600MPa or more, 700MPa or more, 800MPa or more, 900MPa or more, or 1000MPa or more.

[0063] In the present specification, for example, the storage modulus at 150°C after the film adhesive is cured can be measured by the following method. A plurality of film adhesives with a thickness of 5 μm are stacked to make the thickness 100 μm or more, and a measurement sample is prepared by making it into a size of 4 mm in width × 20 mm in length or more. After the prepared sample is cured at 140°C for 30 minutes, the cured sample is placed in a dynamic viscoelasticity measuring device (e.g., Rheogel E-4000, manufactured by Universal Building Materials Co., Ltd.), a tensile load is applied, and the dynamic viscoelasticity is measured in a temperature-dependent measurement mode at room temperature (25°C) to 300°C under the conditions of a distance between chucks of 20 mm, a frequency of 10 Hz, and a heating rate of 3°C / min. Here, the values ​​of the storage modulus at 30°C and 150°C are read, and the respective values ​​are taken as the storage modulus at 30°C and 150°C.

[0064] The thickness of the film adhesive 1 is 15 μm or less, and may be 12 μm or less, 10 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, or 5 μm or less. The lower limit of the thickness of the film adhesive is not particularly limited, and may be, for example, 1 μm or more.

[0065] The film adhesive 1 contains a thermosetting resin component (hereinafter, sometimes referred to as "component (A)") and an elastomer (hereinafter, sometimes referred to as "component (B)"), and may further contain an inorganic filler (hereinafter, sometimes referred to as "component (C)".). Component (A) may include, for example, an epoxy resin (hereinafter, sometimes referred to as "component (A1)") and a phenolic resin (hereinafter, sometimes referred to as "component (A2)".). The content of component (B) is 18% by mass or more based on the total amount of the film adhesive. The content of component (C) is 0 to 25% by mass based on the total amount of the film adhesive. In addition to components (A), (B) and (C), the film adhesive 1 may further contain a coupling agent (hereinafter, sometimes referred to as "component (D)"), a curing accelerator (hereinafter, sometimes referred to as "component (E)") and other components. By adopting such a constituent component, it is easy to produce a film adhesive that satisfies the above-mentioned storage modulus after curing and the above-mentioned thickness conditions.

[0066] (A) Component: Thermosetting resin component

[0067] (A1) Component: Epoxy resin

[0068] As long as the component (A1) is a resin having an epoxy group in the molecule, it can be used without particular limitation. Examples of the component (A1) include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, bisphenol A novolac epoxy resin, bisphenol F novolac epoxy resin, stilbene epoxy resin, epoxy resin containing a triazine skeleton, epoxy resin containing a fluorene skeleton, trisphenol methane epoxy resin, biphenyl epoxy resin, xylylene epoxy resin, biphenylaralkyl epoxy resin, naphthalene epoxy resin, diglycidyl ether compounds of polycyclic aromatics such as polyfunctional phenols and anthracene, etc. Among these, component (A1) may include cresol novolac epoxy resin, bisphenol F epoxy resin, bisphenol A epoxy resin or naphthalene epoxy resin from the viewpoint of film viscosity and flexibility. Bisphenol F epoxy resin has a relatively low softening point, which is often 40° C. or less.

[0069] The component (A1) may include an epoxy resin having a softening point of 40°C or less (or an epoxy resin that is liquid at 30°C, hereinafter sometimes referred to as "component (A1a)"). The component (A1) may be a combination of the component (A1a) and an epoxy resin having a softening point exceeding 40°C (or an epoxy resin that is solid at 30°C, hereinafter sometimes referred to as "component (A1b)"). By including the component (A1a), the component (A1) tends to more easily increase the storage modulus after curing. Furthermore, by making the component (A1) a combination of the component (A1a) and the component (A1b), it tends to be easier to achieve thin film formation. The component (A1a) may, for example, include a bisphenol F-type epoxy resin.

[0070] In addition, in this specification, the softening point means the value measured by the spherical method according to JIS K7234:1986.

[0071] Examples of commercially available products of the component (A1a) include EXA-830CRP (trade name, manufactured by DIC Corporation, liquid at 30°C), YDF-8170C (trade name, manufactured by NIPPON STEEL Chemical & Material Co., Ltd., liquid at 30°C), and EP-4088S (trade name, manufactured by ADEKA Corporation, liquid at 30°C).

[0072] When the component (A1) is a combination of the component (A1a) and the component (A1b), the content of the component (A1a) may be 5% by mass or more, 10% by mass or more, or 15% by mass or more, and may be 70% by mass or less, 60% by mass or less, or 50% by mass or less, based on the total amount of the component (A1). In addition, the content of the component (A1a) in the component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0073] When the component (A1) is a combination of the component (A1a) and the component (A1b), the content of the component (A1b) may be 30% by mass or more, 40% by mass or more, or 50% by mass or more, and may be 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total amount of the component (A1). In addition, the content of the component (A1b) in the component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0074] The epoxy equivalent of the component (A1) is not particularly limited and may be 90 to 300 g / eq or 110 to 290 g / eq. If the epoxy equivalent of the component (A1) is within such a range, the bulk strength of the film adhesive is maintained and the fluidity of the adhesive composition when the film adhesive is formed tends to be easily ensured.

[0075] (A2) Component: Phenolic resin

[0076] The component (A2) may be a component that functions as a curing agent for the component (A1), that is, a curing agent for epoxy resin. When the film adhesive contains the component (A2), the film adhesive is highly cross-linked, thereby increasing the storage modulus after curing.

[0077] As long as the component (A2) is a resin having a phenolic hydroxyl group in the molecule, it can be used without particular limitation. As long as the component (A2) is a resin having a phenolic hydroxyl group in the molecule, it is not particularly limited. As the component (A2), for example, phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and other phenols and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene and compounds having aldehyde groups such as formaldehyde are condensed or co-condensed under an acidic catalyst to obtain a novolac type phenolic resin; phenol aralkyl resin synthesized from phenols and / or naphthols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolac, phenol and dimethoxy-p-xylene or bis(methoxymethyl)biphenyl; naphthol aralkyl resin; biphenyl aralkyl type phenolic resin; phenyl aralkyl type phenolic resin, etc. Among these, the phenol resin may contain a novolac type phenol resin or a phenylaralkyl type phenol resin.

[0078] The hydroxyl equivalent of component (A2) may be 70 g / eq or more or 70 to 300 g / eq. When the hydroxyl equivalent of component (A2) is 70 g / eq or more, the storage modulus tends to be further improved, and when it is 300 g / eq or less, it is possible to prevent the occurrence of defects such as foaming and degassing.

[0079] The softening point of the component (A2) is not particularly limited, and may be, for example, 90° C. or higher, 100° C. or higher, or 110° C. or higher. The upper limit of the softening point of the component (A2) may be, for example, 200° C. or lower.

[0080] Examples of commercially available products of the component (A2) include PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., softening point: 120° C.), J-DPP-140 (trade name, manufactured by JFE Chemical Corporation, softening point: 140° C.), and GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., softening point: 99 to 106° C.).

[0081] From the viewpoint of curability, the ratio of the epoxy equivalent of component (A1) to the hydroxy equivalent of component (A2) (epoxy equivalent of component (A1) / hydroxy equivalent of component (A2)) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45. When the equivalent ratio is 0.30 / 0.70 or more, there is a tendency to obtain more sufficient curability. When the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.

[0082] Based on the total amount of the film-like adhesive, the content of component (A1) (the total of component (A1a) and component (A1b)) can be 20% by mass or more, or 25% by mass or more, 30% by mass or more, 35% by mass or more, 40% by mass or more, or 45% by mass or more. If the content of component (A1) is within such a range, it tends to be easier to increase the storage modulus after curing. From the perspective of operability, based on the total amount of the film-like adhesive, the content of component (A1) can be 70% by mass or less, 65% by mass or less, 60% by mass or less, or 55% by mass or less. In addition, the content of component (A1) (the total of component (A1a) and component (A1b)) in the adhesive composition when forming a film-like adhesive can be the same as the above range.

[0083] Based on the total amount of the film-like adhesive, the content of (A2) component can be 10% by mass or more, or 12% by mass or more, 15% by mass or more, 18% by mass or more, 20% by mass or more, or 22% by mass or more. If the content of (A2) component is within such a range, it is easier to improve the storage modulus after curing. From the viewpoint of operability, based on the total amount of the film-like adhesive, the content of (A2) component can be 35% by mass or less, 32% by mass or less, or 30% by mass or less. In addition, the content of (A2) component in the adhesive composition when forming the film-like adhesive can be the same as the above range.

[0084] Based on the total amount of the film-like adhesive, the content of component (A) (the total of component (A1) and component (A2)) can be 40% by mass or more, or 45% by mass or more, 50% by mass or more, 55% by mass or more, 60% by mass or more, 65% by mass or more, or 70% by mass or more. If the content of component (A) is within such a range, it tends to be easier to increase the storage modulus after curing. From the perspective of operability, based on the total amount of the film-like adhesive, the content of component (A) can be 90% by mass or less, 85% by mass or less, or 80% by mass or less. In addition, the content of component (A) (the total of component (A1) and component (A2)) in the adhesive composition when forming a film-like adhesive can be the same as the above range.

[0085] (B) Component: Elastomer

[0086] As the (B) component, for example, acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, butadiene resin; modified bodies of these resins, etc. can be cited. In addition, as the (B) component, for example, a polymer having an organopolysiloxane in the side chain can be cited. Among these, the (B) component has fewer ionic impurities and better heat resistance, which makes it easier to ensure the connection reliability of the semiconductor device and has better fluidity. Therefore, it can also be an acrylic resin (acrylic rubber) having a constituent unit derived from (meth) acrylate as the main component. Based on the total amount of constituent units, the content of the constituent unit derived from (meth) acrylate in the (B) component can be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more. The acrylic resin (acrylic rubber) can contain constituent units derived from (meth) acrylate having crosslinking functional groups such as epoxy groups, alcoholic or phenolic hydroxyl groups, and carboxyl groups.

[0087] The glass transition temperature (Tg) of the (B) component may be 0 to 30°C. When the Tg of the (B) component is 0°C or higher, the adhesive strength of the film adhesive can be further improved, and the flexibility of the film adhesive can be prevented from becoming too high. If the Tg of the (B) component is 30°C or lower, the decrease in the flexibility of the film adhesive can be suppressed, thereby having an excellent breaking strength when forming a thin film and a tendency to be excellent in processability. The glass transition temperature (Tg) of the (B) component may be 5°C or higher or 10°C or higher, and may be 25°C or lower or 20°C or lower. Here, Tg refers to a value measured using a DSC (differential scanning calorimeter) (for example, manufactured by Rigaku Corporation, Thermo Plus2). By adjusting the type and content of the constituent units constituting the (B) component (when the (B) component is an acrylic resin (acrylic rubber), the constituent units derived from (meth) acrylates), the Tg of the (B) component can be adjusted to the desired range.

[0088] The weight average molecular weight (Mw) of (B) component can be more than 100,000, more than 300,000 or more than 500,000, and can be less than 3,000,000, less than 2,000,000 or less than 1,000,000. If the Mw of (B) component is within such a range, film forming property, film strength, flexibility, viscosity, etc. can be properly controlled, and reflow soldering (Reflow soldering) is excellent, and embeddability can be improved. Here, Mw refers to the value converted using a calibration curve based on standard polystyrene measured by gel permeation chromatography (GPC). In addition, when multiple peaks are observed in GPC, the weight average molecular weight of the peak with the highest peak intensity is defined as the weight average molecular weight in this specification.

[0089] Examples of commercially available products of the component (B) include SG-P3 and SG-80H (both manufactured by Nagase ChemteX Corporation) and KH-CT-865 (manufactured by Resonac Corporation).

[0090] Based on the total amount of the film-like adhesive, the content of the component (B) is 18% by mass or more, and can be 18 to 35% by mass. Based on the total amount of the film-like adhesive, the content of the component (B) can be 20% by mass or more, 22% by mass or more, or 24% by mass or more. If the content of the component (B) is 18% by mass or more based on the total amount of the film-like adhesive, the fracture strength when the film is formed is excellent, the processability is also excellent, and there is a tendency to suppress the warping of the semiconductor device (semiconductor package). In addition, if the content of the component (B) is 18% by mass or more based on the total amount of the film-like adhesive, there is a tendency to suppress the storage modulus at 30°C after curing from becoming too high. Based on the total amount of the film-like adhesive, the content of the component (B) is 35% by mass or less, and can also be 33% by mass or less, 30% by mass or less, or 28% by mass or less. If the content of component (B) is 35% by mass or less based on the total amount of the film adhesive, the storage modulus after curing tends to be more easily increased. In addition, the content of component (B) in the adhesive composition when forming a film adhesive may be the same as the above range.

[0091] (C) Ingredients: Inorganic filler

[0092] The film-like adhesive 1 may further contain the component (C). That is, the film-like adhesive 1 may exist in a form containing the component (C) or in a form substantially not containing the component (C).

[0093] As the component (C), for example, fillers such as aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and silicon dioxide can be cited. Among these, from the viewpoint of adjusting the melt viscosity, the component (C) can be a silicon dioxide filler. The shape of the component (C) is not particularly limited, and can be spherical.

[0094] From the viewpoint of fluidity and storage modulus, the average particle size of component (C) can be less than 0.7 μm, or less than 0.6 μm, less than 0.5 μm, less than 0.4 μm or less than 0.3 μm. The average particle size of component (C) can be, for example, more than 0.01 μm. Here, the average particle size refers to the particle size with a cumulative frequency of 50% in the particle size distribution obtained by the laser diffraction / scattering method. In addition, the average particle size of component (C) can also be obtained by using a film-like adhesive containing component (C). In this case, the residue obtained by decomposing the resin component by heating the film-like adhesive is dispersed in a solvent to prepare a dispersion, and the average particle size of component (C) can be obtained based on the particle size distribution obtained by applying the laser diffraction / scattering method thereto.

[0095] Based on the total amount of the film-like adhesive, the content of the component (C) is 0 to 25% by mass, and can be 0 to 22% by mass, 0 to 20% by mass, 0 to 17% by mass, 0 to 15% by mass, 0 to 12% by mass, 0 to 10% by mass, 0 to 7% by mass, 0 to 5% by mass, 0 to 4% by mass, 0 to 3% by mass, 0 to 2% by mass, 0 to 1% by mass, 0 to 0.5% by mass or 0 to 0.1% by mass. If the content of the component (C) is within such a range, there is a tendency to be able to further thin film. In addition, if the content of the component (C) is 25% by mass or less based on the total amount of the film-like adhesive, there is an excellent fracture strength when forming a thin film, excellent processability, and a tendency to suppress the warping of the semiconductor device (semiconductor package). In one embodiment, based on the total amount of the film-like adhesive, the content of the (C) component may be 22% by mass or less, 20% by mass or less, 17% by mass or less, 15% by mass or less, 12% by mass or less, 10% by mass or less, 7% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.5% by mass or less, or 0.1% by mass or less. In one embodiment, based on the total amount of the film-like adhesive, the content of the (C) component may be 0% by mass. That is, in one embodiment, the film-like adhesive may not contain the (C) component. In one embodiment, based on the total amount of the film-like adhesive, the lower limit of the content of the (C) component may be 0% by mass or more, more than 0% by mass, 1% by mass or more, 3% by mass or more, or 5% by mass or more. In addition, the content of the (C) component in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0096] The (A) component and the (B) component or the (A) component, the (B) component and the (C) component can be the main components of the film-like adhesive of the present embodiment. The total content of the (A) component and the (B) component or the total content of the (A) component, the (B) component and the (C) component can be, for example, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 96% by mass or more, 97% by mass or more, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, 99.7% by mass or more, or 99.9% by mass or more. The total content of the (A) component and the (B) component or the total content of the (A) component, the (B) component and the (C) component can be, for example, 100% by mass or less, 99.9% by mass or less, 99.7% by mass or less, or 99.5% by mass or less.

[0097] (D) Ingredient: Coupling agent

[0098] (D) Component may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

[0099] (E) Component: Curing accelerator

[0100] Examples of the component (E) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, the component (E) may be imidazoles and derivatives thereof from the viewpoint of reactivity.

[0101] Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0102] (E) Component may contain 2-phenylimidazole from the viewpoint of easily promoting curing at low temperature.

[0103] The film-like adhesive may further contain other components. Examples of other components include pigments, ion scavengers, antioxidants, and the like.

[0104] Based on the total amount of the film-like adhesive, the total content of the component (D), the component (E) and the other components may be 0% by mass or more, 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass or more, and may be 30% by mass or less, 20% by mass or less, 10% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, or 1% by mass or less. In addition, the total content of the component (D), the component (E) and the other components in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0105] Figure 1 The film-like adhesive 1 shown is an adhesive formed by forming an adhesive composition containing (A) component and (B) component and components and (C) component added as needed into a film shape. This film-like adhesive 1 can be formed by applying the adhesive composition on a support film. In the formation of the film-like adhesive 1, a varnish (adhesive varnish) containing an adhesive composition and a solvent can be used. When using an adhesive varnish, the (A) component and (B) component and components and (C) component added as needed are mixed or kneaded in a solvent to prepare the adhesive varnish, the obtained adhesive varnish is applied to a support film, and the solvent is removed by heating and drying, thereby obtaining the film-like adhesive 1.

[0106] The support film is not particularly limited as long as it is a film that can withstand the above-mentioned heating and drying, and can be, for example, a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyethylene naphthalate film, a polymethylpentene film, etc. The support film can be a multilayer film formed by combining two or more kinds of films, or a film whose surface is treated with a silicone-based, silica-based release agent, etc. The thickness of the support film can be, for example, 10 to 200 μm or 20 to 170 μm.

[0107] The mixing or kneading can be carried out using a common disperser such as a stirrer, a pestle, a three-roll mill, or a ball mill, or by combining them as appropriate.

[0108] The solvent used to prepare the adhesive varnish is not limited as long as it can evenly dissolve, knead or disperse the various components, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From the viewpoint of drying speed and price, the solvent may be methyl ethyl ketone or cyclohexanone.

[0109] As a method for coating the adhesive varnish on the support film, a known method can be used, for example, a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a rod coating method, a curtain coating method, etc. The heating and drying conditions are not particularly limited as long as the used solvent is fully volatilized, and can be 50 to 150° C. and 1 to 30 minutes.

[0110] Since the film adhesive 1 can be made thinner, it can be preferably used in the manufacturing process of a semiconductor device formed by stacking a plurality of semiconductor chips. In this case, the semiconductor device can be a stacked MCP or a three-dimensional NAND memory.

[0111] [Dicing and Die Bonding Integrated Film]

[0112] Figure 2 It is a schematic cross-sectional view showing one embodiment of a dicing die bonding integrated film. Figure 2 The dicing die bonding integrated film 10 shown in the figure sequentially comprises a base material layer 2, a pressure-sensitive adhesive layer 3, and an adhesive layer 1A formed by the above-mentioned film-like adhesive 1. The laminate composed of the base material layer 2 and the pressure-sensitive adhesive layer 3 is sometimes referred to as a dicing film 4 (dicing tape). When such a dicing die bonding integrated film 10 is used, the lamination process for the semiconductor wafer is one time, so that the operation can be made efficient. The dicing die bonding integrated film can also be in the form of a film, a sheet, a tape, etc.

[0113] The dicing film 4 includes a base material layer 2 and a pressure-sensitive adhesive layer 3 provided on the base material layer 2 .

[0114] As the substrate layer 2, for example, plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, polyimide film, etc. can be cited. These substrate layers 2 can also be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, grinding treatment, and etching treatment as needed.

[0115] The pressure-sensitive adhesive layer 3 is a layer formed by a pressure-sensitive adhesive. There are no particular restrictions on the pressure-sensitive adhesive as long as it has sufficient adhesive force to prevent the semiconductor chip from flying during the cutting process and has a low adhesive force that does not damage the semiconductor chip in the subsequent semiconductor chip pickup process. It is possible to use a previously known pressure-sensitive adhesive in the field of cutting films. The pressure-sensitive adhesive may also be either a radiation-curing type or a non-radiation-curing type. The radiation may be, for example, ultraviolet rays. A non-radiation-curing pressure-sensitive adhesive is a pressure-sensitive adhesive that shows constant adhesiveness under short-term pressure. On the other hand, a radiation-curing pressure-sensitive adhesive is a pressure-sensitive adhesive that has the property of decreasing adhesiveness by irradiation with radiation (for example, ultraviolet rays).

[0116] From the viewpoint of economic efficiency and film handling properties, the thickness of the dicing film 4 (the base material layer 2 and the pressure-sensitive adhesive layer 3 ) may be 60 to 150 μm or 70 to 130 μm.

[0117] The dicing die bonding integrated film 10 can be obtained, for example, by preparing a film adhesive 1 and a dicing film 4, and bonding the film adhesive 1 to the pressure-sensitive adhesive layer 3 of the dicing film 4. Furthermore, the dicing die bonding integrated film 10 can also be obtained, for example, by preparing a dicing film 4, and applying an adhesive composition (adhesive varnish) on the pressure-sensitive adhesive layer 3 of the dicing film 4 in the same manner as the method of forming the above-mentioned film adhesive 1.

[0118] When the film adhesive 1 is bonded to the pressure-sensitive adhesive layer 3 of the dicing film 4, the dicing die bonding integrated film 10 can be formed by laminating the film adhesive 1 on the dicing film 4 under specified conditions (for example, room temperature (25° C.) or heated) using a roll laminator, a vacuum laminator, etc. The dicing die bonding integrated film 10 can be manufactured continuously with excellent efficiency, and thus can be formed using a roll laminator in a heated state.

[0119] Film adhesives and dicing die bonding integrated films can be used in the manufacturing process of semiconductor devices, and can also be used in the manufacturing process of semiconductor devices formed by stacking multiple semiconductor chips. Film adhesives and dicing die bonding integrated films can be used in the manufacturing process of semiconductor devices, and the manufacturing process of semiconductor devices includes the following steps: laminating the adhesive layer of the film adhesive or dicing die bonding integrated film on a semiconductor wafer or a singulated semiconductor chip, and obtaining a semiconductor chip with an adhesive sheet by dividing it based on a rotating blade, laser or stretching; and bonding the semiconductor chip with the adhesive sheet to a supporting component or a semiconductor chip through the adhesive sheet.

[0120] The film adhesive can also be suitably used as an adhesive for bonding semiconductor chips together in a stacked MCP (for example, a three-dimensional NAND memory) which is a semiconductor device in which a plurality of semiconductor chips are stacked.

[0121] The film-like adhesive can be used, for example, as a protective sheet for protecting the back surface of a semiconductor chip of a flip-chip semiconductor device, a sealing sheet for sealing between the surface of a semiconductor chip of a flip-chip semiconductor device and an adherend, and the like.

[0122] The following is a detailed description of a semiconductor device manufactured using a film adhesive and a dicing die bonding integrated film using the accompanying drawings. In addition, semiconductor devices of various structures have been proposed in recent years, and the use of the film adhesive and dicing die bonding integrated film of this embodiment is not limited to the semiconductor device of the structure described below.

[0123] [Semiconductor devices]

[0124] Figure 3 It is a schematic cross-sectional view showing one embodiment of a semiconductor device. Figure 3 The semiconductor device 100 shown in the figure includes a semiconductor chip 11 (first semiconductor chip), a support member 12 on which the semiconductor chip 11 is mounted, and an adhesive member 15. The adhesive member 15 is provided between the semiconductor chip 11 and the support member 12 to bond the semiconductor chip 11 to the support member 12. The adhesive member 15 is a cured product of an adhesive composition (cured product of a film-like adhesive). The connection terminal (not shown) of the semiconductor chip 11 is electrically connected to an external connection terminal (not shown) via a bonding wire 13 and is sealed by a sealing material 14.

[0125] Figure 4 FIG. 1 is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 4In the semiconductor device 110 shown, the first semiconductor chip 11a (first semiconductor chip) is bonded to a support member 12 having a terminal 16 by an adhesive member 15a (a cured product of an adhesive composition (a cured product of a film-like adhesive)), and a second semiconductor chip 11b (second semiconductor chip) is further bonded to the first semiconductor chip 11a by an adhesive member 15b (a cured product of an adhesive composition (a cured product of a film-like adhesive)). The connection terminals (not shown) of the first semiconductor chip 11a and the second semiconductor chip 11b are electrically connected to external connection terminals via bonding wires 13 and sealed by a sealing material 14. It can also be said that Figure 4 The semiconductor device 110 shown in FIG. Figure 3 The semiconductor device 100 shown further includes another semiconductor chip (11b) stacked on the surface of the semiconductor chip (11a).

[0126] Figure 5 It is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 5 The semiconductor device 120 shown in the figure includes a support member 12, and semiconductor chips 11a (first semiconductor chip), 11b (second semiconductor chip), 11c (third semiconductor chip), and 11d (fourth semiconductor chip) stacked on the support member 12. In order to connect to the connection terminals (not shown) formed on the surface of the support member 12, the four semiconductor chips 11a, 11b, 11c, and 11d are stacked at positions that are offset from each other in the lateral direction (direction perpendicular to the stacking direction) (refer to Figure 5 ). The semiconductor chip 11a is bonded to the support member 12 by the adhesive member 15a (cured material of the adhesive composition (cured material of the film-like adhesive)), and the three semiconductor chips 11b, 11c, and 11d are also respectively interposed with adhesive members 15b, 15c, and 15d (cured material of the adhesive composition (cured material of the film-like adhesive)). It can also be said that Figure 5 The semiconductor device 120 shown in FIG. Figure 3 The semiconductor device 100 shown in the figure further includes other semiconductor chips (11b, 11c, 11d) stacked on the surface of the semiconductor chip (11a).

[0127] The semiconductor device (semiconductor package) has been described in detail above with respect to the embodiments of the present invention, but the present invention is not limited to the above embodiments. Figure 5 In the embodiment, a semiconductor device in which four semiconductor chips are stacked is exemplified, but the number of stacked semiconductor chips is not limited thereto. Figure 5In the figure, a semiconductor device is illustrated in which semiconductor chips are stacked at positions offset from each other in the lateral direction (direction perpendicular to the stacking direction), but a semiconductor device may also be illustrated in which semiconductor chips are stacked at positions not offset from each other in the lateral direction (direction perpendicular to the stacking direction).

[0128] [Method for manufacturing semiconductor device]

[0129] Figure 3 , Figure 4 and Figure 5 The semiconductor device (semiconductor package) shown can be obtained by the following method, which includes the following steps: interposing the above-mentioned film-like adhesive between the semiconductor chip (first semiconductor chip) and the supporting member or between the semiconductor chip (first semiconductor chip) and the semiconductor chip (second semiconductor chip), so as to bond the semiconductor chip (first semiconductor chip) and the supporting member or the semiconductor chip (first semiconductor chip) and the semiconductor chip (second semiconductor chip). More specifically, the above-mentioned film-like adhesive can be interposed between the semiconductor chip and the supporting member or between the semiconductor chip (first semiconductor chip) and the semiconductor chip (second semiconductor chip), and the two can be bonded by heating and pressing them, and then, according to need, it can be obtained through a heat curing step, a wire bonding step, a sealing step using a sealing material, a heating and melting step including solder reflow, etc.

[0130] As a method for placing a film-like adhesive between a semiconductor chip (first semiconductor chip) and a supporting component or between a semiconductor chip (first semiconductor chip) and a semiconductor chip (second semiconductor chip), as described later, a semiconductor chip with an adhesive sheet is pre-fabricated and then attached to a supporting component or another semiconductor chip.

[0131] Next, use Figure 2 An embodiment of a method for manufacturing a semiconductor device using a dicing die bonding integrated film will be described below. The method for manufacturing a semiconductor device using a dicing die bonding integrated film is not limited to the method for manufacturing a semiconductor device described below.

[0132] A semiconductor device can be obtained, for example, by the following method, which includes the following steps: attaching a semiconductor wafer to the adhesive layer of the above-mentioned cut die bonding integrated film (lamination step); producing a plurality of singulated semiconductor chips with adhesive sheets by cutting the semiconductor wafer with the adhesive layer attached (cutting step); and bonding a first semiconductor chip with an adhesive sheet having a first semiconductor chip and a first adhesive sheet as a semiconductor chip with an adhesive sheet to a supporting component via a first adhesive sheet (bonding the semiconductor chip with an adhesive sheet to a supporting component via an adhesive sheet) (first bonding step). The manufacturing method of a semiconductor device may further include the following steps: bonding a second semiconductor chip with an adhesive sheet having a second semiconductor chip and a second adhesive sheet as a semiconductor chip with an adhesive sheet to the surface of the first semiconductor chip in the first semiconductor chip with an adhesive sheet bonded to a supporting component via a second adhesive sheet (bonding another semiconductor chip with an adhesive sheet to the surface of the semiconductor chip bonded to the supporting component via an adhesive sheet possessed by the other semiconductor chip with an adhesive sheet) (second bonding step).

[0133] The lamination step is a step of pressing the semiconductor wafer onto the adhesive layer 1A of the dicing die bonding integrated film 10 to bond and hold the semiconductor wafer. This step may be performed while pressing with a pressing mechanism such as a pressure roller.

[0134] Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

[0135] The cutting process is a process for cutting the semiconductor wafer. In this way, the semiconductor wafer can be cut into a specified size to manufacture a plurality of single-piece semiconductor chips with adhesive sheets. Cutting can be performed, for example, from the circuit surface side of the semiconductor wafer according to a conventional method. In addition, in this process, for example, a method called full cutting in which a cut is provided to the cutting film, a method of dividing by providing a half cut on the semiconductor wafer and cooling and stretching it, a method of dividing it by laser, etc. can be adopted. There is no particular limitation on the cutting device used in this process, and a conventionally known device can be used.

[0136] Semiconductor chips are composed of, for example, a circuit layer and a semiconductor layer (for example, single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide). Examples of semiconductor chips include ICs (integrated circuits). Examples of supporting components include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resins and epoxy resins; modified plastic films formed by impregnating and curing plastics such as polyimide resins and epoxy resins in substrates such as glass nonwoven fabrics; ceramics such as alumina, etc.

[0137] The manufacturing method of the semiconductor device may also include a picking-up process as needed. The picking-up process is a process for picking up the semiconductor chip with the adhesive sheet in order to peel off the semiconductor chip with the adhesive sheet that is bonded and fixed to the dicing die bonding integrated film. There is no particular limitation on the picking-up method, and various methods known in the past can be used. As such a method, for example, a method of lifting each semiconductor chip with the adhesive sheet from the dicing die bonding integrated film side by a needle, and picking up the lifted semiconductor chip with the adhesive sheet by a picking-up device, etc.

[0138] Here, when the pressure-sensitive adhesive layer is a radiation (e.g., ultraviolet) curing type, the pressure-sensitive adhesive layer can be irradiated with radiation before picking up. As a result, the adhesive strength of the pressure-sensitive adhesive layer to the adhesive sheet decreases, and the semiconductor chip with the adhesive sheet can be easily peeled off. As a result, the semiconductor chip with the adhesive sheet can be picked up without damaging it.

[0139] The first bonding step is a step of bonding the first semiconductor chip with an adhesive sheet formed by cutting to a support component for mounting the semiconductor chip via the first adhesive sheet. The method for manufacturing a semiconductor device may also include a step of bonding the second semiconductor chip with an adhesive sheet to the surface of the semiconductor chip bonded to the support component via the second adhesive sheet (second bonding step) as needed. The bonding can be performed by crimping. There is no particular limitation on the crimping conditions, and they can be appropriately set as needed. The crimping conditions may be, for example, a temperature of 80 to 160°C, a load of 5 to 15N, and a time of 1 to 10 seconds. In addition, as a support component, the same support component as described above can be exemplified.

[0140] The method for manufacturing a semiconductor device may also include a step (thermal curing step) of further thermally curing the adhesive sheet (the first adhesive sheet in the first semiconductor chip with an adhesive sheet and the second adhesive sheet in the second semiconductor chip with an adhesive sheet) or the film-like adhesive as required. By further thermally curing the adhesive sheet (the first adhesive sheet in the first semiconductor chip with an adhesive sheet and the second adhesive sheet in the second semiconductor chip with an adhesive sheet) to which the semiconductor chip (the first semiconductor chip) and the supporting component, as well as the semiconductor chip (the first semiconductor chip) and the semiconductor chip (the second semiconductor chip) are bonded, they can be more firmly bonded and fixed. In the case of thermal curing, pressure may also be applied at the same time to cure it. The heating temperature in this step can be appropriately changed according to the constituent components of the adhesive sheet. The heating temperature may be, for example, 60 to 200°C or 100 to 180°C. In addition, the temperature or pressure may also be changed in stages. The heating time may be, for example, 1 to 120 minutes or 15 to 60 minutes.

[0141] The method for manufacturing a semiconductor device may also include, as needed, a step of electrically connecting the first semiconductor chip and the second semiconductor chip to a supporting component using a bonding wire. More specifically, it may include a step of electrically connecting an electrode pad on the semiconductor chip to the end of a terminal portion (inner lead) of the supporting component using a bonding wire (wire bonding step). As bonding wires, for example, gold wires, aluminum wires, copper wires, etc. are used. The temperature during wire bonding may be in the range of 80 to 250°C or 80 to 220°C. The heating time may be from several seconds to several minutes. Wire bonding may also be performed by simultaneously using ultrasonic vibration energy and pressure-applied compression energy while heating within the above-mentioned temperature range.

[0142] The method for manufacturing a semiconductor device may also include, as required, a step of sealing a semiconductor chip using a sealing material (sealing step). This step is performed to protect a semiconductor chip or a bonding wire mounted on a supporting member. This step can be performed by molding a sealing resin (sealing resin) with a mold. As a sealing resin, for example, an epoxy resin can be used. By burying the supporting member and the residue by heat and pressure during sealing, peeling caused by bubbles in the bonding interface can be prevented.

[0143] The method for manufacturing a semiconductor device may also include a step (post-curing step) of completely curing the sealing resin that is not fully cured in the sealing step as needed. Even if the adhesive sheet is not thermally cured in the sealing step, the adhesive sheet can be thermally cured while curing the sealing resin in this step to bond and fix. The heating temperature in this step can be appropriately set according to the type of sealing resin, for example, it can be in the range of 165 to 185° C., and the heating time can be about 0.5 to 8 hours.

[0144] The method for manufacturing a semiconductor device may also include, as needed, a step of heating a semiconductor chip bonded to a supporting member or a semiconductor chip using a reflow furnace (heating and melting step). In this step, the resin-sealed semiconductor device may also be surface-mounted on the supporting member. As a surface mounting method, for example, solder may be supplied to a printed circuit board in advance, and then heated and melted by warm air or the like, and then reflowed. As a heating method, for example, hot air reflow, infrared reflow, etc. may be mentioned. Furthermore, the heating method may heat the entire device or may heat a part of the device. The heating temperature may be, for example, in the range of 240 to 280°C.

[0145] Example

[0146] Hereinafter, the present invention will be specifically described based on Examples, but the present invention is not limited to these.

[0147] [Production of film adhesive]

[0148] (Examples 1 to 5 and Comparative Examples 1 to 4)

[0149] <Preparation of adhesive varnish>

[0150] Cyclohexanone was added to a mixture of component (A) (component (A1) and component (A2)) and component (C) in the components and contents (unit: parts by mass) shown in Table 1, and stirred and mixed. Component (B) was added thereto in the components and contents (unit: parts by mass) shown in Table 1, and components (D) and (E) were further added and stirred until the components became uniform, thereby preparing an adhesive varnish. In addition, the components shown in Table 1 refer to the following components, and the numerical values ​​shown in Table 1 refer to the parts by mass of the components (solid content) excluding the solvent and the like.

[0151] (A) Component: Thermosetting resin component

[0152] (A1) Component: Epoxy resin

[0153] (A1a-1) EXA830-CRP (trade name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 155 to 163 g / eq, softening point: 40°C or less, liquid at 30°C)

[0154] (A1b-1) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 75 to 85°C, solid at 30°C)

[0155] (A1b-2) HP-4710 (trade name, manufactured by DIC Corporation, naphthalene-type epoxy resin, epoxy equivalent: 170 g / eq, softening point: 95° C., solid at 30° C.)

[0156] (A2) Component: Phenolic resin

[0157] (A2-1) PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., novolac type phenolic resin, hydroxyl equivalent: 105 g / eq, softening point: 120° C.)

[0158] (B) Component: Elastomer

[0159] (B-1) SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C)

[0160] (C) Ingredients: Inorganic filler

[0161] (C-1) Silica filler dispersion (manufactured by CIK NanoTek Corporation, silica filler, average particle size: 0.10 μm)

[0162] (C-2) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm)

[0163] (D) Ingredient: Coupling agent

[0164] (D-1) Z-6119 (trade name, manufactured by Dow Toray Co., Ltd., γ-ureidopropyltriethoxysilane)

[0165] (D-2) A-189 (trade name, manufactured by Nippon Unicar Company Limited, γ-mercaptopropyltrimethoxysilane)

[0166] (E) Component: Curing accelerator

[0167] (E-1) 2PZ (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 2-phenylimidazole)

[0168] (E-2) 2PZ-CN (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole)

[0169] <Production of film adhesive>

[0170] The prepared adhesive varnish was filtered through a 100 mesh filter and vacuum defoamed. A 38 μm thick polyethylene terephthalate film (PET) film that had been subjected to demolding treatment was prepared as a support film, and the vacuum defoamed adhesive varnish was applied to the PET film. The applied adhesive varnish was heated and dried at 90°C for 5 minutes, and then heated and dried at 140°C for 5 minutes to obtain film-like adhesives of Examples 1 to 5 and Comparative Examples 1 to 4 in the B stage state. In the film-like adhesives of Examples 1 to 5 and Comparative Examples 1 to 4, the thickness of the film-like adhesive was adjusted to 5 μm by the amount of adhesive varnish applied.

[0171] [Evaluation of film adhesives]

[0172] <Measurement of storage modulus>

[0173] Using the film adhesives of Examples 1 to 5 and Comparative Examples 1 to 4, the storage modulus after curing was measured. The storage modulus after curing was measured by the following method. That is, by stacking a plurality of film adhesives with a thickness of 5 μm to make the thickness of 100 μm or more, and by making it into a size of 4 mm in width × 20 mm in length or more, a sample for measurement was prepared. After the prepared sample was cured at 140°C for 30 minutes, the cured sample was placed in a dynamic viscoelasticity measuring device (Rheogel E-4000, manufactured by Universal Building Materials Co., Ltd.), a tensile load was applied, and the dynamic viscoelasticity was measured in a temperature-dependent measurement mode at room temperature (25°C) to 300°C under the conditions of a distance between chucks of 20 mm, a frequency of 10 Hz, and a heating rate of 3°C / min, and the storage modulus values ​​at 30°C and 150°C were read, and the respective values ​​were used as the storage modulus at 30°C and 150°C. The results are shown in Table 1. The larger the storage modulus at 150°C (e.g., 80 MPa or more), the more the brittleness of the semiconductor chip caused by thin filming can be compensated, and the chip cracking can be suppressed. The smaller the storage modulus at 30°C (e.g., 2000 MPa or less), the easier it is to make the film adhesive thinner, and in the cured product of the film adhesive, it can be more fully suppressed from becoming too hard.

[0174] <Measurement of breaking strength>

[0175] The film adhesives of Examples 1 to 5 and Comparative Examples 1 to 4 were measured for breaking strength at 25° C. using a tensile tester (RTF-1250-HS-PL, A&D Company, Limited). More specifically, the film adhesives in the B-stage state were used to prepare Figure 6 A test piece of the shape shown. The two ends of the prepared test piece were clamped with a testing machine, and a tensile test was carried out. The tensile test was carried out in an environment of 25°C, and the tensile speed was set to 100 mm / min. The breaking strength was calculated by the following formula based on the average thickness (0.005 mm (5 μm)) and width (10 mm) of the test piece before the test and the maximum load (N) before the test piece was cut. The results are shown in Table 1. In addition, the numerical values ​​shown in Table 1 are converted to the load values ​​when the average thickness of the test piece before the test is 5 μm (unit: N / 10mm). The breaking strength refers to the larger the numerical value (for example, above 0.7 N / 10mm), the better the processability when forming a thin film.

[0176] Breaking strength (MPa) = Maximum load before test piece cutting (N) / (average thickness of test piece (mm) × width (mm))

[0177] <Evaluation of Warpage of Semiconductor Device (Semiconductor Package)>

[0178] (Production of Die-cutting and Bonding Integrated Film)

[0179] A dicing film (trade name 6363-45, manufactured by Resonac Corporation) having a substrate and a pressure-sensitive adhesive layer was prepared, and the pressure-sensitive adhesive layer of the dicing film was adhered to each of the film-like adhesives of Examples 1 to 5 and Comparative Examples 1 to 4 using a rubber roller, thereby producing dicing die bonding integrated films of Examples 1 to 5 and Comparative Examples 1 to 4 having a substrate, a pressure-sensitive adhesive layer and an adhesive layer (film-like adhesive) in sequence.

[0180] (Preparation of Evaluation Samples)

[0181] Evaluation samples were prepared using the dicing die bonding integrated film of Examples 1 to 5 and Comparative Examples 1 to 4. Evaluation samples for evaluating warpage were prepared as follows. A semiconductor wafer with a thickness of 40 μm was prepared, and the film adhesive side of the dicing die bonding integrated film was laminated on the semiconductor wafer at a table temperature of 70°C to prepare a dicing sample. The obtained dicing sample was cut using a fully automatic cutting machine DFD-6362 (manufactured by DISCO Corporation). Cutting was performed in a single cut manner using one blade, using ZH05-SD4000-N1-70-EE (manufactured by DISCO Corporation). The cutting conditions were set to a blade speed of 40,000 rpm, a cutting speed of 50 mm / sec, and a chip size of 10 mm×6 mm. Regarding cutting, cutting was performed in a manner that formed a cut of about 20 μm on the dicing film. Next, ultraviolet rays were irradiated to the pressure-sensitive adhesive layer formed by the ultraviolet curing pressure-sensitive adhesive to cure the pressure-sensitive adhesive layer, and the semiconductor chip with the adhesive sheet was picked up. Next, under the conditions of temperature 130°C, load 10N and time 1 second, the adhesive sheet of the semiconductor chip with the adhesive sheet was crimped onto an organic substrate with a solder resist of 90μm thickness×240mm width×74mm length, and evaluation samples of Examples 1 to 5 and Comparative Examples 1 to 4 were prepared. In the evaluation samples, 60 first-layer semiconductor chips were arranged in 15 rows and 4 columns, and then 60 second-layer semiconductor chips were arranged on the surface of each of the first-layer semiconductor chips.

[0182] (Evaluation of Warpage of Semiconductor Device (Semiconductor Package))

[0183] The warpage of the semiconductor device (semiconductor package) was evaluated using the evaluation samples of Examples 1 to 5 and Comparative Examples 1 to 4. Each evaluation sample was placed in an oven, heated from 35°C to 140°C at a heating rate of 3°C / min, and heated at 140°C for 30 minutes. The evaluation sample after the heat treatment was taken out from the pressurized oven, and the warpage of the semiconductor device (semiconductor package) was measured. More specifically, the evaluation sample after the heat treatment was placed on a plane with the semiconductor chip side facing down, and a digital indicator (Digimatic Indicator) ID-H0530 (manufactured by Mitutoyo Corporation) was used. The five points of the upper left, upper right, center, lower left and lower right of the evaluation sample after the heat treatment placed on the plane were used as measurement points, and the difference between the maximum and minimum values ​​of the measurement results was obtained, and it was used as the warpage. The case where the warpage is less than 3.0 mm is regarded as the warpage being fully suppressed and evaluated as "A", and the case where the warpage exceeds 3.0 mm is evaluated as "B". Table 1 shows the results.

[0184]

[0185] As shown in Table 1, the film adhesives of Examples 1 to 5 were excellent in both storage modulus and breaking strength at 150° C., whereas the film adhesives of Comparative Examples 1 to 4 were insufficient in at least one of the storage modulus and breaking strength at 150° C. These results confirmed that the film adhesive of the present invention was excellent in processability when formed into a thin film and could suppress the occurrence of chip cracks.

[0186] Explanation of symbols

[0187] 1-film adhesive, 1A-adhesive layer, 2-base material layer, 3-pressure-sensitive adhesive layer, 4-dicing film, 10-dicing die bonding integrated film, 11, 11a, 11b, 11c, 11d-semiconductor chip, 12-support component, 13-bonding wire, 14-sealing material, 15, 15a, 15b, 15c, 15d-adhesive component, 16-terminal, 100, 110, 120-semiconductor device.

Claims

1. A film-like adhesive comprising a thermosetting resin component and an elastomer, and further comprising an inorganic filler, wherein: The content of the elastomer is 18% by mass or more based on the total amount of the film adhesive. Based on the total amount of the film adhesive, the content of the inorganic filler is 0 to 25% by mass. The film adhesive is cured at 140° C. for 30 minutes to obtain a cured product having a storage modulus of 80 MPa or more at 150° C., The film adhesive has a thickness of 15 μm or less.

2. The film adhesive according to claim 1, wherein The content of the elastomer is 18 to 35% by mass based on the total amount of the film adhesive.

3. The film adhesive according to claim 1, wherein The content of the inorganic filler is 0 to 3% by mass based on the total amount of the film adhesive.

4. The film-like adhesive according to any one of claims 1 to 3, wherein The storage modulus of a cured product at 30° C. after curing the film adhesive at 140° C. for 30 minutes is 2000 MPa or less.

5. The film-like adhesive according to any one of claims 1 to 3, wherein The thermosetting resin component includes epoxy resin and phenolic resin.

6. The film-like adhesive according to any one of claims 1 to 3, wherein The glass transition temperature of the elastomer is 0-30°C. 7 . The film-like adhesive according to claim 1 , which is used in a process for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked.

8. The film-like adhesive according to claim 7, wherein: The semiconductor device is a three-dimensional NAND memory. 9 . A dicing die bonding integrated film comprising, in this order, a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer formed of the film-like adhesive according to claim 1 .

10. A semiconductor device comprising: 1st semiconductor chip; a supporting member for mounting the first semiconductor chip; and The cured product of the film-like adhesive according to claim 1 or 2 is provided between the first semiconductor chip and the supporting member to bond the first semiconductor chip and the supporting member. 11 . The semiconductor device according to claim 10 , further comprising a second semiconductor chip which is stacked on a surface of the first semiconductor chip and is different from the first semiconductor chip.

12. A method for manufacturing a semiconductor device, comprising the following steps: Attaching the adhesive layer of the dicing die bonding integrated film according to claim 9 to a semiconductor wafer; Manufacturing a plurality of semiconductor chips with adhesive sheets by dicing the semiconductor wafer with the adhesive layer attached thereto; and A first semiconductor chip with an adhesive sheet, which is the semiconductor chip with an adhesive sheet and includes a first semiconductor chip and a first adhesive sheet, is bonded to a supporting member via an adhesive sheet.

13. The method for manufacturing a semiconductor device according to claim 12, further comprising the following step: A second semiconductor chip with an adhesive sheet having a second semiconductor chip and the second adhesive sheet as the semiconductor chip with an adhesive sheet is bonded to the surface of the first semiconductor chip among the first semiconductor chips with an adhesive sheet bonded to the supporting member via a second adhesive sheet.

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