Surface emitting laser and distance measuring device

Abstract

Provided is a surface-emitting laser capable of obtaining desired characteristics while suppressing the occurrence of structural defects. A surface emitting laser according to the present technology includes a resonator including: a first structure including a substrate and a first reflector stacked on each other; a second structure including a second reflector and disposed on a side of the first reflector of the first structure; and an intermediate structure including an active layer and disposed between the first and second structures. The substrate is made of a material having a lattice constant greater than that of GaAs and less than that of AlAs. The first reflector and the intermediate structure are made of different material systems. According to the present technology, it is possible to provide a surface-emitting laser capable of obtaining desired characteristics while suppressing the occurrence of structural defects.

Description

Technical Field

[0001] A technology according to the present disclosure (hereinafter also referred to as “the present technology”) relates to a surface emitting laser and a distance measuring device. Background Art

[0002] Conventionally, a vertical cavity surface emitting laser (VCSEL) that emits light in a direction perpendicular to a substrate is known.

[0003] Among conventional surface emitting lasers, there is a surface emitting laser in which a resonator including a lower reflector, an active layer, and an upper reflector is provided on a substrate (for example, see Patent Document 1).

[0004] Among conventional surface emitting lasers, there is a surface emitting laser that includes a resonator that includes different multiple material systems and is provided on a substrate, and through which desired characteristics (for example, an oscillation wavelength with an eye-safe zone, high reflectivity, and high heat dissipation characteristics) can be obtained (for example, see Patent Document 2).

[0005] Reference List

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2005-159071

[0008] Patent Document 2: Japanese Patent Application Publication No. 11-186653 Summary of the invention

[0009] Problems to be solved by the present invention

[0010] For example, with the surface emitting laser described in Patent Document 1, since the resonator includes a single material system, it is difficult to obtain the above-described desired characteristics.

[0011] For example, with the surface emitting laser described in Patent Document 2, there is room for improvement in suppressing the occurrence of structural defects (eg, bonding defects) due to deformation of the substrate and the resonator.

[0012] Therefore, a main object of the present technology is to provide a surface emitting laser capable of obtaining desired characteristics while suppressing the occurrence of structural defects.

[0013] The present technology provides a surface emitting laser, comprising:

[0014] Resonator, including:

[0015] a first structure including a substrate and a first reflector stacked on each other;

[0016] a second structure including a second reflector and disposed on a side of the first structure corresponding to the first reflector; and

[0017] an intermediate structure including an active layer and disposed between the first and second structures, wherein

[0018] The substrate includes a material having a lattice constant greater than that of GaAs and less than that of AlAs, and

[0019] The first reflector and the intermediate structure comprise different material systems.

[0020] The first reflector may include a material system lattice matched to GaAs, and the intermediate structure may include a material system lattice matched to InP.

[0021] The substrate may include Ge.

[0022] The first structure and the intermediate structure may be combined.

[0023] An adhesive layer may be formed between the first structure and the intermediate structure.

[0024] The intermediate structure may include a tunnel junction layer stacked on the active layer, the intermediate structure may include a limiting portion configured to at least limit the current, and the limiting portion may include a high resistance region or an insulating region present in a peripheral portion of at least a portion of the intermediate structure in the thickness direction.

[0025] The confinement portion may include an ion implantation region.

[0026] The confinement portion may include a high resistance region or an insulating region present at least around the tunnel junction layer.

[0027] The tunnel junction layer may have a mesa shape, and the confinement portion may include a high resistance region existing around the tunnel junction layer.

[0028] The confinement portion may include an insulating region present around the tunnel junction layer.

[0029] The tunnel junction layer may include an InAlAs layer, and an insulating region exists around the InAlAs layer.

[0030] The insulating region may include an oxidized region.

[0031] The insulating region may include a void.

[0032] The active layer may include a quantum dot active layer.

[0033] The limiting portion may be ring-shaped, the substrate may include a through hole at a position corresponding to a region surrounded by the limiting portion, and the surface emitting laser may be configured to emit light to a back side of the substrate.

[0034] The tunnel junction layer may be disposed on a side of the active layer opposite to the substrate.

[0035] The tunnel junction layer may be disposed on a side of the active layer corresponding to the substrate. The intermediate structure may include a plurality of semiconductor structures stacked on each other, and each of the plurality of semiconductor structures may include an active layer and a tunnel junction layer.

[0036] The intermediate structure may include a plurality of restriction portions arranged in the in-plane direction.

[0037] The present technology also provides a distance measuring device, comprising:

[0038] The surface emitting laser described above; and

[0039] A light receiving element is provided on the substrate of the surface emitting laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 is a cross-sectional view of a surface emitting laser according to a first embodiment of the present technology.

[0041] Figure 2 is a plan view of a surface emitting laser according to a first embodiment of the present technology.

[0042] Figure 3 It is used to describe the manufacturing Figure 1 Flow chart of a first example of a method of producing a surface emitting laser.

[0043] Figure 4 A to Figure 4 C is used to manufacture Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0044] Figure 5 A and 5B are used to make Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0045] Figure 6 A and 6B are used to make Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0046] Figure 7 A and Figure 7 B is used for manufacturing Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0047] Figure 8 A and Figure 8 B is used for manufacturing Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0048] Fig. 9 A and Fig. 9 B is used for manufacturing Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0049] Fig.10 It is used to manufacture Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0050] Fig.11 It is used to manufacture Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0051] Fig.12 It is used to manufacture Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0052] Fig.13 A and Fig.13 B is used for manufacturing Figure 1 A cross-sectional view of each process of a first example of a surface emitting laser method.

[0053] Fig.14 It is used to describe the manufacturing Figure 1 Flow chart of a second example of a method of producing a surface emitting laser.

[0054] Fig.15 A to Fig.15 C is used to manufacture Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0055] Fig.16 A and 16B are used to make Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0056] Fig.17 A and Fig.17 B is used for manufacturing Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0057] Fig.18 A and Fig.18 B is used for manufacturing Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0058] Fig.19A and Fig.19 B is used for manufacturing Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0059] Fig. 20 A and Fig. 20 B is used for manufacturing Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0060] Fig.21 A and Fig.21 B is used for manufacturing Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0061] Fig. 22 A and Fig. 22 B is used for manufacturing Figure 1 A cross-sectional view of each process of a second example of a surface emitting laser method.

[0062] Fig.23 is a cross-sectional view of a surface emitting laser according to a second embodiment of the present technology.

[0063] Fig.24 is a cross-sectional view of a surface emitting laser according to Example 1 of the third embodiment of the present technology.

[0064] Fig.25 is a cross-sectional view of a surface emitting laser according to Example 2 of the third embodiment of the present technology.

[0065] Fig.26 is a cross-sectional view of a surface emitting laser according to Example 3 of the third embodiment of the present technology.

[0066] Fig. 27 is a cross-sectional view of a surface emitting laser according to Example 1 of the fourth embodiment of the present technology.

[0067] Fig.28 is a cross-sectional view of a surface emitting laser according to Example 2 of the fourth embodiment of the present technology.

[0068] Fig.29 is a cross-sectional view of a surface emitting laser according to Example 3 of the fourth embodiment of the present technology.

[0069] Fig.30 is a cross-sectional view of a surface emitting laser according to a fifth embodiment of the present technology.

[0070] Fig.31 is a cross-sectional view of a surface emitting laser according to Example 1 of a sixth embodiment of the present technology.

[0071] Fig.32 is a cross-sectional view of a surface emitting laser according to Example 2 of the sixth embodiment of the present technology.

[0072] Fig.33 is a cross-sectional view of a surface emitting laser according to Example 3 of the sixth embodiment of the present technology.

[0073] Fig.34 is a cross-sectional view of a surface emitting laser according to a seventh embodiment of the present technology.

[0074] Fig.35 is a cross-sectional view of a surface emitting laser according to an eighth embodiment of the present technology.

[0075] Fig.36 is a cross-sectional view of a surface emitting laser according to a ninth embodiment of the present technology.

[0076] Fig.37 is a plan view of a surface emitting laser according to a ninth embodiment of the present technology.

[0077] Fig.38 is a cross-sectional view of a distance measuring device according to a tenth embodiment of the present technology.

[0078] Fig.39 is a cross-sectional view of a surface emitting laser according to an eleventh embodiment of the present technology.

[0079] Fig.40 is a cross-sectional view of a surface emitting laser according to a twelfth embodiment of the present technology.

[0080] Fig.41 is a cross-sectional view of a surface emitting laser according to a thirteenth embodiment of the present technology.

[0081] Fig.42 is a cross-sectional view of a surface emitting laser according to a fourteenth embodiment of the present technology.

[0082] Fig.43 is a cross-sectional view of a surface emitting laser according to a fifteenth embodiment of the present technology.

[0083] Fig.44 is a cross-sectional view of a surface emitting laser according to a sixteenth embodiment of the present technology.

[0084] Fig.45 is a cross-sectional view of a surface emitting laser according to a seventeenth embodiment of the present technology.

[0085] Fig.46 is a diagram for explaining the lattice constant of Ge.

[0086] Fig.47 is a diagram showing an application example of the surface emitting laser according to the present technology to a distance measuring device.

[0087] Fig.48 is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0088] Fig.49 : is an explanatory diagram showing an example of the installation position of the distance measuring device. DETAILED DESCRIPTION

[0089] Hereinafter, preferred embodiments of the present technology will be described in detail with reference to the accompanying drawings. Note that in this specification and the accompanying drawings, components having substantially the same functional configuration are represented by the same reference numerals, and redundant descriptions are omitted. The embodiments described below provide representative embodiments of the present technology, and the scope of the present technology should not be narrowly interpreted based on these embodiments. In this specification, even in the case where a surface-emitting laser and a distance-finding device according to the present technology are described to exhibit multiple effects, it is sufficient if the surface-emitting laser and the distance-finding device according to the present technology exhibit at least one effect. The effects described in this specification are merely examples and are not limited, and other effects may be applied.

[0090] Furthermore, the description will be made in the following order.

[0091] 0. Introduction

[0092] 1. Surface emitting laser according to first embodiment of the present technology

[0093] 2. Surface emitting laser according to second embodiment of the present technology

[0094] 3. Surface emitting laser according to third embodiment of the present technology

[0095] 4. Surface-emitting laser according to fourth embodiment of the present technology

[0096] 5. Surface-emitting laser according to fifth embodiment of the present technology

[0097] 6. Surface-emitting laser according to sixth embodiment of the present technology

[0098] 7. Surface emitting laser according to seventh embodiment of the present technology

[0099] 8. Surface emitting laser according to eighth embodiment of the present technology

[0100] 9. Surface emitting laser according to ninth embodiment of the present technology

[0101] 10. Distance measuring device according to tenth embodiment of the present technology

[0102] 11. Surface emitting laser according to eleventh embodiment of the present technology

[0103] 12. Surface emitting laser according to twelfth embodiment of the present technology

[0104] 13. Surface emitting laser according to thirteenth embodiment of the present technology

[0105] 14. Surface emitting laser according to fourteenth embodiment of the present technology

[0106] 15. Surface emitting laser according to fifteenth embodiment of the present technology

[0107] 16. Surface emitting laser according to sixteenth embodiment of the present technology

[0108] 17. Surface emitting laser according to seventeenth embodiment of the present technology

[0109] 18. Modifications to this Technology

[0110] 19. Application examples of electronic devices

[0111] 20. Example of using surface emitting lasers for distance measuring devices

[0112] 21. Example of distance measuring device installed on a moving object

[0113] <0. Introduction>

[0114] Generally, for InP-based VCSELs, it is difficult to form a semiconductor distributed Bragg reflector (DBR) having high reflectivity and high thermal conductivity (high heat dissipation). Therefore, a technique is known in which a semiconductor DBR (e.g., a GaAs-based semiconductor DBR) is grown on a substrate (e.g., a GaAs substrate) made of a material system (e.g., a GaAs-based semiconductor) different from an InP-based material, and the semiconductor DBR and the InP-based material are bonded together. However, when a GaAs-based semiconductor DBR is formed on a GaAs substrate, the GaAs substrate and the GaAs-based semiconductor DBR are greatly distorted, and there is a possibility that the bonding between the GaAs-based semiconductor DBR and the InP-based material is hindered. Therefore, due to concerns about a reduction in yield caused by structural defects (e.g., bonding defects), this bonding technique has not been put into practical use.

[0115] On the other hand, although InP-based VCSELs using dielectric DBRs have been put into practical use, there is a problem that high-temperature operation is difficult due to poor thermal conductivity (heat dissipation) of dielectric materials.

[0116] Therefore, after intensive studies, the inventors developed a surface emitting laser according to the present technology as a surface emitting laser capable of obtaining desired characteristics (eg, an oscillation wavelength with an eye-safe zone, high reflectivity, and high heat dissipation characteristics) while suppressing the occurrence of structural defects.

[0117] Hereinafter, embodiments of the surface emitting laser according to the present technology will be described in detail through some embodiments. Figure 1 The upper portion in the cross-sectional view of the Figure 1 The lower portion in the cross-sectional view and the like will be described as the lower side.

[0118] <1. Surface-Emitting Laser According to First Embodiment of the Present Technology>

[0119] Hereinafter, a surface emitting laser 10 according to a first embodiment of the present technology will be described.

[0120] <<Configuration of surface emitting laser>>

[0121] [Overall structure]

[0122] Figure 1 is a cross-sectional view of a surface emitting laser 10 according to a first embodiment of the present technology. Figure 2 1 is a plan view of a surface emitting laser 10 according to a first embodiment of the present technology. The surface emitting laser 10 is a vertical cavity surface emitting laser (VCSEL). As an example, the surface emitting laser 10 can constitute a VCSEL having a long wavelength band (eye safety band) of an oscillation wavelength λ of, for example, 900 nm or more, or 1.4 μm or more. In the eye safety band, the oscillation wavelength λ is particularly preferably 1.2 μm or more and 2 μm or less. In one example, the surface emitting laser 10 is driven by a laser driver.

[0123] like Figure 1 and Figure 2 As shown, in one example, the surface emitting laser 10 includes a resonator R, the resonator R includes a first structure ST1, a second structure ST2 and an intermediate structure IST, the first structure ST1 includes a substrate 101 and a first reflector 102 stacked on each other, the second structure ST2 includes a second reflector 108 and is arranged on a side of the first reflector 102 corresponding to the first structure ST1, and the intermediate structure IST includes an active layer 104 and is arranged between the first structure ST1 and the second structure ST2. In one example, the second reflector 108 is a reflector on the emission side. The first reflector 102 is also referred to as a lower reflector. The second reflector 108 is also referred to as an upper reflector. In the following, the direction in which the substrate 101, the first reflector 102, etc. are stacked is also referred to as a "stacking direction".

[0124] As an example, the intermediate structure IST further includes a tunnel junction layer 106 stacked on the active layer 104, a first cladding layer 103 disposed on the side (lower side) of the active layer 104 corresponding to the first structure ST1, a second cladding layer 105 disposed between the active layer 104 and the tunnel junction layer 106, and a third cladding layer 107 disposed around the tunnel junction layer 106. In the example, the tunnel junction layer 106 is disposed on the side of the active layer 104 opposite to the substrate 101.

[0125] As an example, the first structure ST1 and the intermediate structure IST are combined. As an example, an adhesive layer may be formed between the first reflector 102 of the first structure ST1 and the first cladding layer 103 of the intermediate structure IST.

[0126] As an example, the intermediate structure IST includes a mesa M on the first cladding layer 103 , the mesa M including the active layer 104 , the second cladding layer 105 , the tunnel junction layer 106 , and the third cladding layer 107 . At least the side surface of the mesa M is covered by the insulating film 109 .

[0127] As an example, the second reflector 108 is disposed on the central portion of the top of the mesa M (on the central portion of the upper surface of the third cladding layer 107). An annular (e.g., ring-shaped) anode electrode 110 is disposed on the peripheral portion of the top of the mesa M (on the area around the second reflector 108 on the upper surface of the third cladding layer 107) to surround the second reflector 108.

[0128] For example, the cathode electrode 111 is provided on the upper surface of the first cladding layer 103 on the side surface side of the mesa M via the insulating film 109. That is, the surface emitting laser 10 has an intracavity structure in which the anode electrode 110 and the cathode electrode 111 are arranged on the same surface side of the resonator R.

[0129] The intermediate structure IST includes a limiting portion that at least limits the current. The limiting portion is a high resistance region or an insulating region present in the peripheral portion of at least a portion of the thickness direction (stacked direction) of the intermediate structure IST. More specifically, the limiting portion is a high resistance region or an insulating region present around the tunnel junction layer 106. More specifically, the tunnel junction layer 106 is arranged on the second cladding layer 105 in a table shape, and the limiting portion is a high resistance region present around the tunnel junction layer 106. Here, the third cladding layer 107 is an embedded layer that fills the periphery of the tunnel junction layer 106, and the region of the third cladding layer 107 that surrounds the tunnel junction layer 106 and has a higher resistance than the tunnel junction layer 106 is used as a limiting portion. That is, the tunnel junction layer 106 and the third cladding layer 107 constitute a buried tunnel junction (BTJ). Hereinafter, the tunnel junction layer 106 is also referred to as a "TJ table". In the BTJ, the limiting portion (high resistance region) surrounding the TJ table has a higher resistance than the TJ table, and therefore serves as a current limiting portion. In the BTJ, if the refractive index is lower than that of the TJ mesa, a confinement portion surrounding the TJ mesa also functions as a light confinement portion.

[0130] [First Structure]

[0131] (Substrate)

[0132] For example, the substrate 101 includes a material having a lattice constant greater than that of GaAs (5.653) and less than that of AlAs (5.661). More specifically, the substrate 101 includes, for example, Ge (lattice constant: 5.658) (see Fig.46 ). The substrate 101 is ideally undoped, but may be doped with, for example, n-type doping. In this case, the dopant (n-type impurity) may be, for example, a Group V element (e.g., As, Sb, etc.). Since the Ge substrate has low defects and can produce wafers with a large diameter, the Ge substrate contributes to reliability improvement and cost reduction.

[0133] (First reflector)

[0134] The first reflector 102 is, for example, a semiconductor multilayer film reflector (semiconductor DBR). The semiconductor multilayer film reflector has a structure in which multiple (for example, two types) refractive index layers (semiconductor layers) with different refractive indices are alternately stacked with an optical thickness of 1 / 4 (λ / 4) of the oscillation wavelength λ. Here, the semiconductor stacked film reflector as the first reflector 102 is preferably undoped, but may also be doped with, for example, n-type doping. The dopant (n-type impurity) in this case may be, for example, Si, Se, Te, etc.

[0135] For example, the first reflector 102 is a semiconductor multilayer film DBR of a first material system (GaAs system), which is a material system lattice-matched with GaAs. The first material system (GaAs-based) can also be defined as a material system having a lattice constant within the range of ±0.2% of the GaAs lattice constant. Compared with, for example, an InP-based semiconductor DBR having the same logarithm, a GaAs-based semiconductor DBR can obtain high reflectivity and high thermal conductivity. As the first material system (GaAs-based), for example, Al x Ga 1-x As / Al y Ga 1-y As(0≤x<1, 0<y≤1, x<y) (see Fig.46 ). Here, the first reflector 102 includes GaAs / AlAs, for example.

[0136] In the first structure ST1, the lattice constant (5.658) of Ge constituting the substrate 101 is preferably greater than or equal to the lattice constant (eg, Al x Ga 1-x As) and is less than or equal to the lattice constant of the low refractive index layer of the first reflector 102 (e.g., Al y Ga 1-y As)(see Fig.46 That is, the high refractive index layer (eg, Al x Ga 1-x The lattice constant of As) is preferably smaller than that of Ge, and the low refractive index layer (e.g., Al y Ga 1-y The lattice constant of As) is preferably greater than that of Ge. This is because high refractive index layers (e.g., Al x Ga 1-x As) and a low refractive index layer (e.g., Al y Ga 1-y As) in the strain (tensile strain and compressive strain) that cancel each other out, and a strain compensation relationship is established. Therefore, the value of x is preferably set to Al x Ga 1-x The lattice constant of As is smaller than that of Ge, and the value of y is preferably set to Al y Ga 1-y The lattice constant of As exceeds that of Ge.

[0137] The first structure ST1 may have a buffer layer between the substrate 101 and the second reflector 102 .

[0138] [Intermediate structure]

[0139] As an example, the intermediate structure IST includes a material system different from the material system of the first reflector 102. The intermediate structure IST includes a second material system (InP system), which is a material system lattice-matched with InP. The second material system (InP system) can also be defined as a material system having a lattice constant within the range of ±0.2% of the lattice constant of InP. The second material system (based on InP) includes, for example, InP, AlInAs, AlGaInAs, InGaAsP, etc.

[0140] (First coating layer)

[0141] For example, the first cladding layer 103 includes an n-InP layer. For example, Si may be used as a dopant of the n-InP layer.

[0142] (Active layer)

[0143] For example, the active layer 104 includes an InP-based compound semiconductor. More specifically, as an example, the active layer 104 has a multiple quantum well structure (MQW structure) including AlGaInAs or GaInAsP. Here, the active layer 104 includes, for example, an AlGaInAs / AlGaInAs multiple quantum well layer. In the AlGaInAs / AlGaInAs multiple quantum well layer, the composition and thickness are designed so that the emission wavelength falls within the range of an eye safety band, for example, longer than 1400nm, but it is preferred to apply opposite strains to the well layer and the barrier layer. In this case, for example, the magnitude of the strain can be about 1%, and the number of wells can be 4 to 8. In the active layer 104, the area corresponding to the tunnel junction layer 106 is a light-emitting area. The light-emitting area of ​​the active layer 104 is also a heat-generating portion.

[0144] (Second coating layer)

[0145] For example, the second cladding layer 105 includes a p-InP layer. For example, Mg may be used as a dopant of the p-InP layer.

[0146] (BTJ)

[0147] The BTJ includes the tunnel junction layer 106 and the third cladding layer 107 as described above. As described above, the BTJ is disposed on the side of the active layer 104 corresponding to the second reflector 108. That is, the BTJ is located upstream of the active layer 104 along the current path from the anode electrode 110 to the cathode electrode 111.

[0148] For example, the third cladding layer 107 includes an n-InP layer. For example, Si may be used as a dopant of the n-InP layer.

[0149] The tunnel junction layer 106 (TJ mesa) has a much lower resistance (very high carrier conductivity) than the surrounding third cladding layer 107, and serves as a current passing region. As described above, the region of the third cladding layer 107 surrounding the TJ mesa is a confinement portion. The tunnel junction layer 106 is also a heat generating portion. The diameter of the mesa (TJ mesa) of the tunnel junction layer 106 is, for example, several μm to several tens of μm.

[0150] The tunnel junction layer 106 includes a p-type semiconductor region 106a and an n-type semiconductor region 106b stacked on each other. Here, the p-type semiconductor region 106a is arranged on one side (lower side) of the n-type semiconductor region 106b adjacent to the active layer 104. For example, the p-type semiconductor region 106a includes p-type AlInAs (p-AlInAs) doped with a high concentration of carbon (C). The n-type semiconductor region 106b includes, for example, n-type InP (n-InP) doped with a high concentration of Si, Te, etc. Note that one of the p-type semiconductor region 106a and the n-type semiconductor region 106b can be made of AlInA, the other can be made of InP, or both can be made of AlInA or InP.

[0151] [Second Structure]

[0152] (Second reflector)

[0153] As an example, the second reflector 108 includes a material system different from that of the intermediate structure IST. The second reflector 108 is, for example, a dielectric multilayer film reflector (dielectric DBR). The dielectric multilayer film reflector has a structure in which multiple (for example, two types) refractive index layers (dielectric layers) with different refractive indices are alternately stacked with an optical thickness of 1 / 4 (λ / 4) of the oscillation wavelength λ. The second reflector 108 is, for example, made of a dielectric material including SiO 2 、TiO 2 、 2 O 5 、SiN、a-Si、MgF 2 , CaF 2 The dielectric multilayer reflector as the second reflector 108 may include, for example, SiO 2 / TiO 2 、 2 O 5 / SiO 2 , or a-Si / Ta 2 O 5 The reflectivity of the second reflector 108 is set slightly lower than the reflectivity of the first reflector 102. That is, the surface emitting laser 10 is a surface emitting type surface emitting laser 10 that emits laser light as emission light EL to the surface side (the side corresponding to the second reflector 108).

[0154] (Insulation film)

[0155] The insulating film 109 is made of SiO 2 , SiN, SiON and other dielectrics.

[0156] (negative electrode)

[0157] For example, the anode electrode 110 includes Au / Ni / AuGe, Au / Pt / Ti, etc. The anode electrode 110 is electrically connected to, for example, an anode (positive electrode) of a laser driver. Note that a contact layer (current injection layer) having a lower resistance than the third cladding layer 107 may be provided between the anode electrode 110 and the third cladding layer 107.

[0158] (positive electrode)

[0159] The cathode electrode 111 is composed of, for example, Au / Ni / AuGe, Au / Pt / Ti, etc. The cathode electrode 111 is electrically connected to, for example, a cathode (negative electrode) of a laser driver.

[0160] <<Operation of Surface Emitting Laser>>

[0161] In the surface emitting laser 10, the current flowing from the anode side of the laser driver via the anode electrode 110 is limited by the BTJ and injected into the active layer 104 via the second cladding layer 105. At this time, the active layer 104 emits light, and the light reciprocates while being limited by the BTJ and amplified by the active layer 104 between the first reflector 102 and the second reflector 108, and when the oscillation condition is satisfied, the light is emitted as laser light (emission light EL) from the side (surface side) corresponding to the second reflector 108. The current injected into the active layer 104 flows out to the cathode side of the laser driver through the first cladding layer 103 and the cathode 111 in sequence.

[0162] When the surface emitting laser 10 is driven, part of the heat generated in the tunnel junction layer 106 and the active layer 104 is transferred to the first reflector 102 through the first cladding layer 103. Part of the heat transferred to the first reflector 102 is released to the outside from the side surface of the first reflector 102, and the other part is transferred to the first substrate 101 and released to the outside from the substrate 101. In this case, compared with the case where the first reflector 102 is formed of an InP-based semiconductor stacked film reflector, heat dissipation can be improved.

[0163] <<First Embodiment of Method for Manufacturing Surface Emitting Laser>>

[0164] In the following, reference will be made to e.g. Figure 3The flowchart of FIG. 1 describes a first example of a method for manufacturing the surface emitting laser 10. Here, as an example, by a semiconductor manufacturing method using a semiconductor manufacturing device, a plurality of surface emitting lasers 10 are simultaneously generated on one wafer as a base material of the substrate 101. Next, the plurality of surface emitting lasers 10 integrated in series are separated to obtain a plurality of chip-shaped surface emitting lasers 10 (surface emitting laser chips).

[0165] In a first step S1, a first laminate L1 (first structure ST1) is produced (see Figure 4 A). Specifically, for example, the first reflector 102 (for example, GaAs / AlAs) is epitaxially grown on the substrate 101 (for example, Ge substrate) by a metal organic chemical vapor deposition (MOCVD) method to generate the first laminate L1. At this time, in the first laminate L1, since the lattice constant of Ge constituting the substrate 101 is between the lattice constants of GaAs and AlAs constituting the first reflector 102, strain compensation occurs and stress is released. Therefore, the substrate 101 and the first reflector 102 do not warp or substantially do not warp.

[0166] In the next step S2, a second laminate L2 is generated (see Figure 4 B). Specifically, an etch stop layer ESL (e.g., an InGaAs layer), a first cladding layer 103 (e.g., an n-InP layer), an active layer 104, a second cladding layer 105 (e.g., a p-InP layer), and a tunnel junction layer 106 are sequentially epitaxially grown on a growth substrate GS (e.g., an n-InP substrate) by an MOCVD method to generate a second laminate L2.

[0167] In the next step S3, a TJ mesa is formed. Specifically, first, a resist pattern RP (see FIG. 1 ) is formed by photolithography to cover a portion of the second laminate L2 on which the TJ mesa is to be formed, corresponding to the tunnel junction layer 106. Figure 4 C). Next, using the resist pattern RP as a mask, the tunnel junction layer 106 is etched by wet etching using a hydrochloric acid-based etchant to form a TJ mesa (see Figure 5 A). In this case, for example, HCl, H 3 PO 4 , CH 3 COOH, H 2 As an etchant for etching the n-type semiconductor region 106b (e.g., n-InP layer) of the tunnel junction layer 106, a mixed solution of H2O, etc. can be used. As an etchant for etching the p-type semiconductor region 106a (e.g., p-AlInAs layer), for example, H 3 PO 4 , H 2 O2 , H 2 Next, wet etching using an organic solvent or etching using a mixture of O 2 , CF4 or H 2 The resist pattern RP is removed by dry etching with a gas (see Figure 5 B).

[0168] In the next step S4, a third cladding layer 107 (see Figure 6 A). Specifically, on the second laminate (on the second cladding layer 105) on which the TJ mesa is formed by the MOCVD method, a third cladding layer 107 (eg, n-InP layer) is grown as an embedded layer. As a result, the TJ mesa is embedded with the third cladding layer 107.

[0169] In the next step S5, a mesa M is formed. Specifically, first, an oxide film (for example, SiO2) is formed by photolithography to cover the portion of the third cladding layer 107 of the second laminate where the mesa M is to be formed. 2 The hard mask HM (see Figure 6 B). At this time, an oxide film as a hard mask HM is formed by a CVD method, a sputtering method, a vapor deposition method, or the like, and patterning of the oxide film is performed by wet etching using a hydrofluoric acid-based etchant using the resist pattern as a mask. Next, with the hard mask HM as a mask, the second stack is etched by dry etching using a Cl-based gas to form a mesa M (see FIG. Figure 7 A). At this time, for example, using a 2 , BCl 3 、SiCl 4 , Ar or O 2 Here, etching is performed at least until the first cladding layer 103 is exposed, but the etching stop layer ESL restricts over-etching. Then, the oxide film is removed by wet etching using a hydrofluoric acid-based etchant (see Figure 7 B).

[0170] In the next step S6, an insulating film 109 (see Figure 8 A) Specifically, an insulating film 109 is formed on the entire surface of the second laminated board.

[0171] In the next step S7, a portion of the insulating film 109 is removed (see Figure 8B). Specifically, first, a resist pattern is formed by photolithography to cover the insulating film 109 except for a portion covering the top of the mesa M and a portion covering the area around the mesa M on the upper surface of the first cladding layer 103. Next, using the resist pattern as a mask, the second laminate is etched by dry etching using, for example, CF4 gas, thereby exposing the top of the mesa M and the area of ​​the upper surface of the first cladding layer 103 around the mesa M.

[0172] In the next step S8, the anode electrode 110 and the cathode electrode 111 are formed (see Fig. 9 A). Specifically, for example, a ring-shaped (e.g., annular) anode electrode 110 is formed on the periphery of the top of the mesa M by a lift-off method, and a cathode electrode 111 is formed on the region of the upper surface of the first cladding layer 103 around the mesa M. At this time, the electrode materials of the anode electrode 110 and the cathode electrode 111 are formed by a sputtering method or a vapor deposition method.

[0173] In the next step S9, the second reflector 108 (see Fig. 9 B). Specifically, first, a dielectric multilayer film as a material of the second reflector 108 is formed on the entire surface of the second laminate. Next, a resist pattern is formed on the dielectric multilayer film covering the central portion of the top of the mesa M by photolithography. Next, the dielectric multilayer film is etched by dry etching or wet etching using the resist pattern as a mask. Thus, the second reflector 108 is formed on the central portion of the top of the mesa M. In addition, the second reflector 108 can also be formed by, for example, lift-off.

[0174] In the next step S10, the support substrate SB is attached to the second laminate (see Fig.10 ). Specifically, the supporting substrate SB is attached to the surface of the second laminated plate on the side where the mesa M is formed via, for example, wax W. Note that a resin or a tape may be used instead of the wax W to attach the supporting substrate SB.

[0175] In the next step S11, the growth substrate GS and the etching stop layer ESL (see Fig.11 Specifically, the back side of the growth substrate GS is polished using a grinder or CMP equipment to thin the growth substrate GS, and then the thinned growth substrate GS and the etching stop layer ESL are removed by wet etching using a hydrochloric acid-based etchant. As a result, the first cladding layer 103 (n-InP layer) of the second laminate is exposed.

[0176] In the next step S12, the first and second laminates are joined (see Fig.12 and Fig.13A). Specifically, the surface of the first laminate on the side corresponding to the first reflector 102 and the surface of the second laminate on the side corresponding to the first cladding layer 103 are bonded to each other by, for example, room temperature bonding, plasma bonding, thermal compression bonding, etc. so as to face each other. In the bonded body JB obtained by bonding (see Fig.13 A), the first laminate inherently has no or substantially no warpage, so that the bonding interface is in a favorable state. Note that when dust or the like generated during crystal growth exists on the surface of the first laminate corresponding to the first reflector 102, it is preferable to remove the dust or the like by wet etching, chemical mechanical polishing, etc. before bonding.

[0177] In the final step S13, the support substrate SB is removed (see Fig.13 B). Specifically, the wax W is melted by heating to remove the support substrate SB and the wax W. Then, cleaning and separation of the surface emitting lasers 10 are performed, and the anode electrode 110 and the cathode electrode 111 of each surface emitting laser 10 are connected to the corresponding terminals of the laser driver by, for example, wire bonding.

[0178] <<Second Embodiment of Method for Manufacturing Surface Emitting Laser>>

[0179] In the following, reference will be made to e.g. Fig.14 The flowchart of FIG. 1 describes a second example of a method for manufacturing the surface emitting laser 10. Here, as an example, by a semiconductor manufacturing method using a semiconductor manufacturing device, a plurality of surface emitting lasers 10 are simultaneously generated on one wafer as a base material of the substrate 101. Next, the plurality of surface emitting lasers 10 integrated in series are separated to obtain a plurality of chip-shaped surface emitting lasers 10 (surface emitting laser chips).

[0180] In a first step S21, a first laminate L1 (see Fig.15 A). Specifically, the first reflector 102 is stacked on the substrate 101. More specifically, for example, a GaAs-based compound semiconductor layer as a material of the first reflector 102 is epitaxially grown on the substrate 101 (Ge substrate) as the first substrate by a metal organic chemical vapor deposition (MOCVD) method.

[0181] In the next step S22, the first laminate L1 and the second substrate 103GS (for example, an n-InP substrate) are bonded (see Fig.15 B and Fig.15C). Specifically, the surface of the first laminate L1 corresponding to one side of the first reflector 102 and one surface of the second substrate 103GS are bonded to face each other by, for example, room temperature bonding, plasma bonding, thermal compression bonding, etc. In the bonded body JB obtained by bonding, the first laminate L1 inherently has no or substantially no warpage, so that the bonding interface is in a favorable state. Note that when dust or the like generated when crystals grow is present on the surface of the first laminate corresponding to the first reflector 102, it is preferred to remove the dust or the like by wet etching, chemical mechanical polishing, etc. before bonding.

[0182] In the next step S23, the second substrate 103GS is removed while leaving a portion (see Fig.16 A) Specifically, the surface of the bonded body JB on the side corresponding to the second substrate 103GS is polished by a grinder or a CMP apparatus to thin the second substrate 103GS.

[0183] In the next step S24, a second laminate L2 is generated (see Fig.16 B). Specifically, as an example, a first cladding layer 103, an active layer 104, a second cladding layer 105 and a tunnel junction layer 106 are epitaxially grown in sequence on a second substrate 103GS (growth substrate) of the junction body JB by metal organic chemical vapor deposition (MOCVD).

[0184] In the next step S25, a TJ mesa is formed. Specifically, first, a resist pattern RP (see FIG. 1 ) is formed by photolithography to cover a portion of the surface of the second laminate L2 on the side corresponding to the tunnel junction layer 106 where the TJ mesa is to be formed. Fig.17 A). Next, using the resist pattern RP as a mask, the tunnel junction layer 106 is etched by wet etching using a hydrochloric acid-based etchant to form a TJ mesa (see FIG. Fig.17 B). In this case, for example, HCl, H 3 PO 4 , CH 3 COOH, H 2 As an etchant for etching the n-type semiconductor region 106b (e.g., n-InP layer) of the tunnel junction layer 106, a mixed solution of H2O, etc. can be used. As an etchant for etching the p-type semiconductor region 106a (e.g., p-AlInAs layer), for example, H 3 PO 4 , H 2 O 2 , H 2 Next, wet etching using an organic solvent or etching using a mixture of O 2 , CF4 or H 2 The resist pattern RP is removed by dry etching with a gas (see Fig.18 A).

[0185] In the next step S26, a third cladding layer 107 (see Fig.18 B) Specifically, as an example, on the second laminate (on the second cladding layer 105) on which the TJ mesa is formed by the MOCVD method, a third cladding layer 107 (for example, an n-InP layer) is grown as an embedded layer. As a result, the TJ mesa is embedded with the third cladding layer 107.

[0186] In the next step S27, a mesa M is formed. Specifically, first, an oxide film (for example, SiO2) is formed by photolithography to cover the portion of the third cladding layer 107 of the second laminate where the mesa M is to be formed. 2 The hard mask HM (see Fig.19 A). At this time, an oxide film as a hard mask HM is formed by a CVD method, a sputtering method, a vapor deposition method, or the like, and patterning of the oxide film is performed by wet etching using a hydrofluoric acid-based etchant using the resist pattern as a mask. Next, with the hard mask HM as a mask, the second stack is etched by dry etching using a Cl-based gas to form a mesa M (see Fig.19 B) At this time, for example, using a 2 , BCl 3 、SiCl 4 , Ar or O 2 Here, etching is performed at least until the first cladding layer 103 is exposed. Then, the oxide film is removed by wet etching using a hydrofluoric acid-based etchant (see Fig. 20 A).

[0187] In the next step S28, an insulating film 109 (see Fig. 20 B) Specifically, an insulating film 109 is formed on the entire surface of the second laminated board.

[0188] In the next step S29, a portion of the insulating film 109 is removed (see Fig.21 A). Specifically, first, a resist pattern is formed by photolithography to cover the insulating film 109 except for a portion covering the top of the mesa M and a portion covering the area around the mesa M on the upper surface of the first cladding layer 103. Next, using the resist pattern as a mask, the second laminate is etched by dry etching using, for example, CF4 gas, thereby exposing the top of the mesa M and the area of ​​the upper surface of the first cladding layer 103 around the mesa M.

[0189] In the next step S30, the negative electrode 110 and the positive electrode 111 are formed (see Fig.21B). Specifically, for example, a ring-shaped (e.g., annular) anode electrode 110 is formed on the periphery of the top of the mesa M by a lift-off method, and a cathode electrode 111 is formed on the region of the upper surface of the first cladding layer 103 around the mesa M. At this time, the electrode materials of the anode electrode 110 and the cathode electrode 111 are formed by a sputtering method or a vapor deposition method.

[0190] In the next step S31, the second reflector 108 is formed. Specifically, first, a dielectric multilayer film as a material of the second reflector 108 is formed on the entire surface of the second laminate (see Fig. 22 A). Next, a resist pattern is formed on the dielectric multilayer film covering the central portion of the top of the mesa M by photolithography. Next, the dielectric multilayer film is etched by dry etching or wet etching using the resist pattern as a mask (see Fig. 22 B). Therefore, the second reflector 108 is formed on the central portion of the top of the mesa M. In addition, the second reflector 108 may also be formed by lift-off, for example.

[0191] <<Effects of surface emitting laser and method of manufacturing the same>>

[0192] The surface emitting laser 10 according to the first embodiment of the present technology includes a resonator including: a first structure ST1 including a substrate 101 and a first reflector 102 stacked on each other; a second structure ST2 including a second reflector 108 and arranged on one side of the first structure ST1 corresponding to the first reflector 102; and an intermediate structure IST including an active layer 104 and arranged between the first structure ST1 and the second structure ST2. The substrate 101 includes a material having a lattice constant greater than GaAs and less than AlAs, and the first reflector 102 and the intermediate structure IST include different material systems.

[0193] In this case, for example, even when a GaAs-based material is used as the material system of the first reflector 102, the warpage of the substrate 101 and the first reflector 102 can be significantly reduced compared to the case where a GaAs-based semiconductor DBR is provided on a GaAs substrate. In addition, for example, an InP-based material different from a GaAs-based material can be used as the material system of the intermediate structure IST. As a supplementary explanation, for example, the stress of a GaAs-based semiconductor stacked film reflector epitaxially grown on a GaAs substrate is one degree greater than the stress of a GaAs-based DBR epitaxially grown on a Ge substrate, and a warpage correction film is required on the back side of the GaAs substrate.

[0194] As a result, according to the surface emitting laser 10 of the first embodiment, it is possible to provide a surface emitting laser capable of obtaining desired characteristics (e.g., an oscillation wavelength in an eye-safe band, characteristics having high reflectivity and high heat dissipation, etc.) while suppressing the occurrence of structural defects in the resonator R. More specifically, according to the surface emitting laser 10, it is possible to realize a high-efficiency and high-output surface emitting laser capable of performing high-temperature operation, improving yield and reliability, and performing laser oscillation in an eye-safe band.

[0195] The first reflector 102 preferably includes a material system lattice-matched to GaAs, and the intermediate structure IST preferably includes a material system lattice-matched to InP. Therefore, high temperature operation, increased yield, increased reliability, laser oscillation in eye safety belts, high efficiency, and high output can be more reliably achieved.

[0196] The substrate 101 preferably includes Ge. As a result, the yield can be reliably improved and the manufacturing cost can be reduced.

[0197] The first structure ST1 and the intermediate structure IST may be combined. Therefore, a resonator including different material systems may be easily realized.

[0198] An adhesive layer may be formed between the first structures ST1 and the intermediate structures IST.

[0199] The intermediate structure IST includes a tunnel junction layer 106 stacked on the active layer 104, the intermediate structure IST includes a limiting portion that at least limits the current, and the limiting portion may include a high resistance region or an insulating region that exists in the peripheral portion of at least a portion of the intermediate structure IST in the thickness direction. Therefore, the current can be effectively injected into the active layer 104. In addition, the light limiting function can also be given to the limiting portion.

[0200] The confinement portion may include a high resistance region or an insulating region present around the tunnel junction layer 106 .

[0201] When the tunnel junction layer 106 has a mesa shape, the confinement portion may include a high resistance region existing around the tunnel junction layer.

[0202] The tunnel junction layer 106 may be disposed on a side of the active layer 104 opposite the substrate 101 side.

[0203] The second reflector 108 and the intermediate structure IST may include different material systems. Therefore, the second reflector 108 may have characteristics (eg, reflectivity, heat dissipation, etc.) that are not limited by the material system of the intermediate structure IST.

[0204] The second reflector 108 may include a dielectric multilayer film reflector. In this case, it is helpful to thin the surface emitting laser 10 while obtaining high reflectivity.

[0205] A first example of a method for manufacturing a surface emitting laser 10 includes a step of generating a first stack L1 by stacking a first reflector 102 including a first material system on a substrate 101 (first substrate) including a material having a lattice constant greater than GaAs and less than AlAs, a step of generating a second laminate L2 by forming an intermediate structure IST (stacked structure) on a growth substrate GS (second substrate), the intermediate structure IST including a second material system and including, in this order, an active layer 104 and a second reflector 108, a step of removing at least the growth substrate GS from the second laminate L2, and a step of joining a surface of the first laminate L1 corresponding to one side of the first reflector 102 and a surface of the second laminate L2 corresponding to one side of the stacked structure to face each other.

[0206] Therefore, the surface emitting laser 10 can be manufactured relatively easily.

[0207] A second example of a method for manufacturing the surface emitting laser 10 includes a step of generating a first laminate L1 by stacking a first reflector 102 including a first material system on a substrate 101 (first substrate) including a material having a lattice constant greater than GaAs and less than AlAs, a step of generating a joint body JB by bonding a surface of the first laminate L1 corresponding to one side of the first reflector 102 and a surface of a second substrate 103GS to face each other, a step of removing a portion of the second substrate 103GS from the joint body JB, and a step of generating a second laminate L2 by forming a stacked structure including the second material system and the second reflector 102 on another portion of the second substrate 103GS of the joint body JB in this order.

[0208] Therefore, the surface emitting laser 10 can be manufactured relatively easily with less man-hours.

[0209] <2. Surface Emitting Laser According to Second Embodiment of the Present Technology

[0210] Fig.23 2 is a cross-sectional view of a surface emitting laser 20 according to a second embodiment of the present technology. Fig.23 As shown in FIG. 1 , the surface emitting laser 20 has a configuration similar to that of the surface emitting laser 10 according to the first embodiment, but an ion implantation region IIA is provided as a confinement portion instead of the BTJ.

[0211] In the surface emitting laser 20, the confinement portion is an ion implantation region IIA which is a high resistance region present at least around the tunnel junction layer 106. The ion implantation region IIA is an annular (e.g., ring-shaped) region surrounding at least the central portion of the tunnel junction layer 106. Here, in the tunnel junction layer 106, the low resistance central portion is used as a current path region, and the high resistance peripheral portion where the ion implantation region IIA is formed is used as a current confinement region. The inner diameter (current confinement diameter) of the ion implantation region IIA is, for example, several μm to several tens of μm. As the ion species of the ion implantation region IIA, for example, H, He, O, B, etc. plasma is used.

[0212] Here, the ion implantation region IIA is formed in peripheral portions of the third cladding layer 107 , the tunnel junction layer 106 , and the second cladding layer 105 , but is not limited thereto and may be formed in at least the peripheral portion of the tunnel junction layer 106 .

[0213] The surface emitting laser 20 can be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 10 according to the first embodiment. However, in the method for manufacturing the surface emitting laser 20, although it is necessary to perform ion implantation, it is not necessary to perform TJ mesa formation and embedded regrowth, so that the manufacturing process is simplified and the manufacturing cost can be reduced. The ion implantation can be performed before or after the mesa M is formed.

[0214] According to the surface emitting laser 20, it is possible to provide a surface emitting laser capable of obtaining substantially similar effects to the surface emitting laser 10 according to the first embodiment and reducing manufacturing costs.

[0215] <3. Surface-Emitting Laser According to Third Embodiment of the Present Technology>

[0216] (Example 1)

[0217] Fig.24 : is a cross-sectional view of a surface emitting laser 30-1 according to Example 1 of the third embodiment of the present technology. Fig.24 As shown, the surface emitting laser 30 - 1 has a configuration similar to that of the surface emitting laser 20 according to the second embodiment, except that an oxidized region is provided instead of the ion implantation region IIA as a confinement portion.

[0218] In the surface emitting laser 30-1, the confining portion is an oxidized region as an insulating region existing around the tunnel junction layer 106. More specifically, in the surface emitting laser 30-2, an oxidized region 106a2 as an insulating region exists around the p-InAlAs layer of the p-type semiconductor region 106a as the tunnel junction layer 106. The oxidized region 106a2 is provided in a loop shape (annular shape) so as to surround the non-oxidized region 106a1 of the p-InAlAs layer. The oxidized region 106a2 includes an oxide (e.g., Al2O3) generated by selectively oxidizing the p-InAlAs layer from the side surface. 2 O 3 ). The oxidized region 106a2 as the limiting portion has a current limiting function due to its insulation, and has a light limiting function due to the difference in refractive index from the unoxidized region 106a1. The inner diameter (limiting diameter) of the oxidized region 106a2 is, for example, several μm to several tens of μm.

[0219] (Example 2)

[0220] Fig.25 is a cross-sectional view of a surface emitting laser 30-2 according to Example 2 of the third embodiment of the present technology. Fig.25 As shown, the surface emitting laser 30 - 2 has a configuration substantially similar to the surface emitting laser 30 - 1 according to Example 1, except that an oxidized region as a confinement portion is provided in the n-type semiconductor region 106 b of the tunnel junction layer 106 .

[0221] In the surface emitting laser 30-2, the n-type semiconductor region 106b of the tunnel junction layer 106 includes an n-InAlAs layer. In the surface emitting laser 30-2, the confining portion is an oxidized region 106b2 as an insulating region existing around the n-type semiconductor region 106b (n-InAlAs layer) of the tunnel junction layer 106. The oxidized region 106b2 is provided in a loop shape (annular shape) so as to surround the non-oxidized region 106b1 of the n-InAlAs layer. The oxidized region 106b2 includes an oxide (e.g., Al2O3) generated by selectively oxidizing the n-InAlAs layer from the side surface. 2 O 3 ). The oxidized region 106b2 as the limiting portion has a current limiting function due to its insulation, and has a light limiting function due to the difference in refractive index from the unoxidized region 106b1. The inner diameter (limiting diameter) of the oxidized region 106b2 is, for example, several μm to several tens of μm.

[0222] (Example 3)

[0223] Fig.26 : is a cross-sectional view of a surface emitting laser 30-3 according to Example 3 of the third embodiment of the present technology. Fig.26As shown in , the surface emitting laser 30 - 3 has a configuration substantially similar to the surface emitting laser 30 - 1 according to Example 1, except that an oxidized region as a confinement portion is provided in both the p-type semiconductor region 106 a and the n-type semiconductor region 106 b of the tunnel junction layer 106 .

[0224] In the surface emitting laser 30-3, the p-type semiconductor region 106a of the tunnel junction layer 106 includes a p-InAlAs layer, and the n-type semiconductor region 106b includes an n-InAlAs layer. In the surface emitting laser 30-3, the confinement portion includes an oxidized region 106a2 as an insulating region existing around the p-type semiconductor region 106a (p-InAlAs layer) of the tunnel junction layer 106 and an oxidized region 106b2 as an insulating region existing around the n-type semiconductor region 106b (n-InAlAs layer). The oxidized region 106a2 is provided in a loop shape (annular shape) so as to surround the non-oxidized region 106a1 of the p-InAlAs layer. The oxidized region 106b2 is provided in a loop shape (annular shape) so as to surround the non-oxidized region 106b1 of the n-InAlAs layer. The oxidized region 106a2 includes an oxide (e.g., Al) generated by selectively oxidizing the p-InAlAs layer from the side surface. 2 O 3 The oxidized region 106b2 includes an oxide (eg, Al 2 O 3 ). The oxidized region 106a2 of the limiting portion has a current limiting function due to the insulating properties, and has a light limiting function due to the difference in refractive index with the unoxidized region 106a1. The inner diameter (limiting diameter) of the oxidized region 106a2 is, for example, several μm to several tens of μm. The oxidized region 106b2 of the limiting portion has a current limiting function due to the insulating properties, and has a light limiting function due to the difference in refractive index with the unoxidized region 106b1. The inner diameter (limiting diameter) of the oxidized region 106b2 is substantially the same as the inner diameter of the oxidized region 106a2 (for example, several μm to several tens of μm).

[0225] The surface emitting lasers 30-1 to 30-3 according to Examples 1 to 3 of the third embodiment can be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 10 according to the first embodiment. However, in the method for manufacturing the surface emitting lasers 30-1 to 30-3, although it is necessary to perform the oxidation step, it is not necessary to perform TJ mesa formation and embedded regrowth, so that the manufacturing process is simplified and the manufacturing cost can be reduced. The oxidation step can be performed after the mesa M is formed.

[0226] According to the surface emitting lasers 30 - 1 to 30 - 3 , it is possible to provide a surface emitting laser capable of obtaining substantially similar effects to the surface emitting laser 10 according to the first embodiment and reducing manufacturing costs.

[0227] <4. Surface-emitting laser according to fourth embodiment of the present technology>

[0228] (Example 1)

[0229] Fig. 27 4 is a cross-sectional view of a surface emitting laser 40-1 according to Example 1 of a fourth embodiment of the present technology. Fig. 27 As shown, the surface emitting laser 40 - 1 has a configuration similar to that of the surface emitting laser 30 - 1 according to Example 1 of the third embodiment, except that a void V (air gap) is provided instead of the oxidized region as the confinement portion.

[0230] In the surface emitting laser 40-1, a ring-shaped void V is provided around the p-type semiconductor region 106a of the tunnel junction layer 106. The void V as a confinement portion has a current confinement function due to the insulating property, and has a light confinement function due to the refractive index difference with the p-type semiconductor region 106a. The inner diameter (confinement diameter) of the void V is, for example, several μm to several tens of μm.

[0231] (Example 2)

[0232] Fig.28 4 is a cross-sectional view of a surface emitting laser 40-2 according to Example 2 of the fourth embodiment of the present technology. Fig.28 As shown, the surface emitting laser 40 - 2 has a configuration similar to the surface emitting laser 40 - 1 according to Example 1, except that a void V (air gap) is provided around the n-type semiconductor region 106 b of the tunnel junction layer 106 as a confinement portion.

[0233] In the surface emitting laser 40-2, a ring-shaped gap V is provided around the n-type semiconductor region 106b of the tunnel junction layer 106. The gap V as a limiting portion has a current limiting function due to insulation and a light limiting function due to a difference in refractive index with the n-type semiconductor region 106b. The inner diameter (limiting diameter) of the gap V is, for example, several μm to several tens of μm.

[0234] (Example 3)

[0235] Fig.29 4 is a cross-sectional view of a surface emitting laser 40-3 according to Example 3 of the fourth embodiment of the present technology. Fig.29As shown in , the surface emitting laser 40-3 has a configuration similar to the surface emitting laser 40-1 according to Example 1, except that a void V (air gap) is provided around both the p-type semiconductor region 106a and the n-type semiconductor region 106b of the tunnel junction layer 106 as a limiting portion.

[0236] In the surface emitting laser 40-3, a ring-shaped gap V is provided around the p-type semiconductor region 106a and the n-type semiconductor region 106b of the tunnel junction layer 106. The gap V as a limiting portion has a current limiting function due to the insulating property, and has a light limiting function due to the refractive index difference between the p-type semiconductor region 106a and the n-type semiconductor region 106b. The inner diameter (limiting diameter) of the gap V is, for example, several μm to several tens of μm.

[0237] The surface emitting lasers 40-1 to 40-3 according to Examples 1 to 3 of the above-described fourth embodiment can be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 10 according to the first embodiment. However, in the method for manufacturing the surface emitting lasers 40-1 to 40-3, after at least one of the p-type semiconductor region 106a and the n-type semiconductor region 106b of the tunnel junction layer 106 is formed in a mesa shape, it is necessary to grow the third cladding layer 107 to form the void V. At this time, the void V may be formed in a ring shape so as to surround at least a portion of the tunnel junction layer 106 in the thickness direction.

[0238] According to the surface emitting lasers 40 - 1 to 40 - 3 , it is possible to provide a surface emitting laser capable of obtaining substantially similar effects to the surface emitting laser 10 according to the first embodiment.

[0239] <5. Surface-emitting laser according to fifth embodiment of the present technology>

[0240] Fig.30 5 is a cross-sectional view of a surface emitting laser 50 according to a fifth embodiment of the present technology. Fig.30 As shown, the surface emitting laser 50 has a configuration similar to that of the surface emitting laser 10 according to the first embodiment, except that the active layer 104 is a quantum dot active layer having quantum dots (e.g., InAs). According to the surface emitting laser 50, a surface emitting laser capable of obtaining an effect similar to that of the surface emitting laser 10 according to the first embodiment and achieving a low threshold can be provided.

[0241] <6. Surface-Emitting Laser According to Sixth Embodiment of the Present Technology>

[0242] (Example 1)

[0243] Fig.31: is a cross-sectional view of a surface emitting laser 60-1 according to Example 1 of a sixth embodiment of the present technology. Fig.31 As shown, the surface emitting laser 60-1 has a configuration substantially similar to the surface emitting laser 10 according to the first embodiment, except that a through hole TH is provided at a position corresponding to a region (tunnel junction layer 106) of the substrate 101 surrounded by the third cladding layer 107 as a limiting portion, and light is emitted to the back side of the substrate 101. In the surface emitting laser 60-1, heat dissipation is improved by providing the through hole TH.

[0244] In the surface emitting laser 60-1, the second reflector 108 is a hybrid mirror including a dielectric multilayer film reflector 108a and a metal reflector 108b. The metal reflector 108b is a part of a metal material MM stacked on the dielectric multilayer film reflector 108a in a manner of covering the dielectric multilayer film reflector 108a. The other part of the metal material MM is used as an anode electrode 110. The metal material MM may include the material of the anode electrode 110 (for example, a multilayer structure of Au / Ni / AuGe, Au / Pt / Ti, etc.), or may have a single layer structure including, for example, Au, Ag, Cu, Al, etc. The metal material MM is also used as a heat dissipation portion.

[0245] In the surface emitting laser 60 - 1 , the reflectivity of the second reflector 108 is set to be slightly larger than the reflectivity of the first reflector 102 .

[0246] The surface emitting laser 60-1 may be manufactured by a manufacturing method substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the through hole TH is formed in the substrate 101 and the metal material MM is formed to cover the mesa M and the dielectric multilayer film reflector 108a.

[0247] According to the surface emitting laser 60 - 1 , effects similar to those of the surface emitting laser 10 according to the first embodiment can be obtained, and a back-emitting type surface emitting laser suitable for high-temperature operation with higher efficiency and higher output can be provided.

[0248] It should be noted that, in the surface emitting laser 60-1, only the anode electrode 110 may be provided instead of the metal material MM (see, for example, Figure 1 ).

[0249] (Example 2)

[0250] Fig.32 : is a cross-sectional view of a surface emitting laser 60-2 according to Example 2 of the sixth embodiment of the present technology. Fig.32As shown in , the surface emitting laser 60 - 2 has a configuration substantially similar to the surface emitting laser 60 - 1 according to Example 1, except that a metal reflector 102 b is provided in a through hole TH provided in a substrate 101 and light is emitted to the front surface side of the substrate 101 .

[0251] In the surface emitting laser 60-2, the first reflector 102 is a hybrid mirror including a semiconductor stacked film reflector 102a (for example, a GaAs-based semiconductor stacked film reflector) and a metal reflector 102b. The metal reflector 102b has a single-layer structure or a multi-layer structure including, for example, Au, Ag, Cu, Al, etc. The metal reflector 102b also serves as a heat sink.

[0252] The surface emitting laser 60 - 2 may be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 10 according to the first embodiment, except that the through hole TH is formed in the substrate 101 and the metal reflector 102 b is formed in the through hole TH.

[0253] According to the surface emitting laser 60 - 2 , effects similar to those of the surface emitting laser 10 according to the first embodiment can be obtained, and a surface emitting type surface emitting laser suitable for high temperature operation with higher efficiency and higher output can be provided.

[0254] (Example 3)

[0255] Fig.33 : is a cross-sectional view of a surface emitting laser 60-3 according to Example 3 of the sixth embodiment of the present technology. Fig.33 As shown, the surface emitting laser 60 - 3 has a configuration substantially similar to the surface emitting laser 60 - 2 according to Example 2, except that a metal reflector 102 b is provided in a through hole TH provided in the substrate 101 and on the rear surface of the substrate 101 .

[0256] In the surface emitting laser 60-3, the metal reflector 102b constituting the hybrid mirror together with the semiconductor stacked film reflector 102a (for example, a GaAs-based semiconductor stacked film reflector) is provided on the rear surface of the substrate 101 in a state where a part of it is in the through hole TH. That is, in the surface emitting laser 60-3, the metal reflector 102b also used as the first reflector 102 and a part of the dissipation part is enlarged. The metal reflector 102b has a single-layer structure or a multi-layer structure including, for example, Au, Ag, Cu, Al, etc.

[0257] The surface emitting laser 60 - 3 may be manufactured by a manufacturing method substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the through hole TH is formed in the substrate 101 and the metal reflector 102 b is formed in the through hole TH and on the back surface of the substrate 101 .

[0258] According to the surface emitting laser 60 - 3 , effects similar to those of the surface emitting laser 10 according to the first embodiment can be obtained, and a surface emitting type surface emitting laser suitable for high temperature operation with higher efficiency and higher output can be provided.

[0259] <7. Surface-emitting laser according to seventh embodiment of the present technology>

[0260] Fig.34 is a cross-sectional view of a surface emitting laser 70 according to a seventh embodiment of the present technology. Fig.34 As shown, the surface emitting laser 70 has a configuration similar to the surface emitting laser 20 according to the second embodiment, except that the intermediate structure IST has a vertically inverted configuration and the positional relationship between the anode electrode 110 and the cathode electrode 111 is reversed.

[0261] In the surface emitting laser 70, the tunnel junction layer 106 is disposed on the side of the active layer 104 corresponding to the substrate 101. More specifically, in the surface emitting laser 70, the third cladding layer 107, the tunnel junction layer 106, the second cladding layer 105, the active layer 104 and the first cladding layer 103 are stacked in this order on the first structure ST1.

[0262] In the surface emitting laser 70, the p-type semiconductor region 106a is arranged on one side (upper side) of the n-type semiconductor region 106b corresponding to the active layer 104 in the tunnel junction layer 106. In the surface emitting laser 70, the anode electrode 110 is provided on the area around the mesa M on the upper surface of the third cladding layer 107, and the cathode electrode 111 is provided in a loop shape (annular shape) to surround the second reflector 108 on the top of the mesa M.

[0263] In the surface emitting laser 70, the ion implantation region IIA is not provided at least on the surface layer of the first cladding layer 103 on the side opposite to the active layer 104 or the surface layer of the third cladding layer 107 on the side opposite to the active layer 104. In this case, since the ion implantation region IIA does not exist on the current path from the anode electrode 110 to the cathode electrode 111, the current injection efficiency into the active layer 104 can be improved. As described above, in the surface emitting laser 70, the formation position of the ion implantation region IIA is optimized.

[0264] The surface emitting laser 70 may be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 20 according to the second embodiment, except that when the intermediate structure IST is formed by reverse epitaxial growth, a portion of the first cladding layer 103 or the third cladding layer 107 is grown, ion implantation is then performed, and the remaining portion is regrown. Note that the formation position of the ion implantation region IIA may be optimized by introducing a technique of re-growth after ion implantation performed by the manufacturing method of the surface emitting laser 20 in the manufacture of the surface emitting laser 70 according to the second embodiment.

[0265] According to the surface emitting laser 70 , it is possible to obtain effects similar to those of the surface emitting laser 10 according to the first embodiment, and provide a more efficient surface emitting type surface emitting laser.

[0266] <8. Surface-emitting laser according to eighth embodiment of the present technology>

[0267] Fig.35 : is a cross-sectional view of a surface emitting laser 80 according to an eighth embodiment of the present technology. Fig.35 As shown, the surface emitting laser 80 has a configuration substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the intermediate structure IST includes a plurality of (e.g., two) semiconductor structures stacked on each other, and each of these plurality of semiconductor structures has an active layer and a tunnel junction layer.

[0268] In the surface emitting laser 80, the intermediate structure IST includes a first semiconductor structure including a first active layer 104-1 and a first tunnel junction layer 106-1 and disposed on the first structure ST1, and a second semiconductor structure including a second active layer 104-2 and a second tunnel junction layer 106-2 and disposed on the first semiconductor structure.

[0269] In the first semiconductor structure, the first cladding layer 103-1 (e.g., n-InP layer), the first active layer 104-1, the second cladding layer 105-1 (e.g., p-InP layer), the first tunnel junction layer 106-1 and the third cladding layer 107-1 (e.g., n-InP layer) are stacked in this order from the side corresponding to the first structure ST1. In the second semiconductor structure, the third cladding layer 107-1 (e.g., n-InP layer), the second active layer 104-2, the second cladding layer 105-2 (e.g., p-InP layer), the second tunnel junction layer 106-2 and the third cladding layer 107-2 (e.g., n-InP layer) are stacked in sequence from the first semiconductor structure side. The third cladding layer 107-1 is shared by the first and second semiconductor structures.

[0270] In the surface emitting laser 80, since the first tunnel junction layer 106-1 is disposed between the first active layer 104-1 and the second active layer 104-2, substantially the same magnitude of current may flow through the first active layer 104-1 and the second active layer 104-2.

[0271] The first tunnel junction layer 106-1 has a wide flat shape. The second tunnel junction layer 106-2 has a mesa shape and constitutes a BTJ together with the third cladding layer 107-2 as an embedded layer.

[0272] The surface emitting laser 80 may be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 10 according to the first embodiment except that the first and second semiconductor structures are stacked.

[0273] According to the surface emitting laser 80 , it is possible to provide a surface emitting type surface emitting laser capable of obtaining effects similar to those of the surface emitting laser 10 according to the first embodiment and further increasing outputs of a plurality of active layers.

[0274] Note that a high-output surface-emitting laser having a plurality of active layers in which three or more active layers are stacked can also be realized by a technique similar to that of the surface-emitting laser 80 .

[0275] <9. Surface-emitting laser according to ninth embodiment of the present technology>

[0276] Fig.36 is a cross-sectional view of a surface emitting laser 90 according to a ninth embodiment of the present technology. Fig.37 is a plan view of a surface emitting laser 90 according to an eighth embodiment of the present technology. Fig.36 and Fig.37 As shown, the surface emitting laser 90 has a configuration substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that a plurality of limiting portions are provided in the in-plane direction in the intermediate structure IST.

[0277] In the surface emitting laser 90, a plurality of sets of mesa-shaped tunnel junction layers 106 (TJ mesas) and confinement portions (parts of the third cladding layer 107) surrounding the TJ mesas are arranged in the intermediate structure IST in the in-plane direction.

[0278] In the surface emitting laser 90, the first reflector 102 is provided so as to be shared by a plurality of TJ mesas. The second reflector 108 has a plurality of reflection regions individually corresponding to the plurality of TJ mesas. The region of the active layer 104 corresponding to each TJ mesas is a light emitting region. Here, both the anode electrode 110 and the cathode electrode 111 are commonly disposed in the plurality of light emitting regions.

[0279] The surface emitting laser 90 may be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 10 according to the first embodiment, except that a plurality of TJ mesas are formed.

[0280] According to the surface emitting laser 90 , it is possible to provide a surface emitting type surface emitting laser (basically, a surface emitting laser array) having a plurality of light emitting units and capable of obtaining effects similar to those of the surface emitting laser 10 according to the first embodiment.

[0281] For example, the anode electrode 110 may include electrode regions insulated from each other in respective light emitting regions so that the light emitting cells can be independently driven.

[0282] <10. Distance-measuring device according to tenth embodiment of the present technology>

[0283] Fig.38 1 is a cross-sectional view of a distance measuring device 100 according to a tenth embodiment of the present technology. Fig.38 As shown in , a distance measuring device 100 includes a surface emitting laser having a configuration substantially similar to that of the surface emitting laser 90 according to the ninth embodiment, and a light receiving element 115 provided on a substrate 101 of the surface emitting laser.

[0284] As an example, the substrate 101 of the surface emitting laser of the distance measuring device 100 is a Ge substrate on which an IC including a laser driver and a light receiving circuit is formed. The light receiving circuit includes, for example, an A / D converter, a time of flight (TOF) calculation unit, and the like.

[0285] As an example, the light receiving element 115 is provided in a state where the light receiving surface is exposed to a hole portion formed in the surface of the substrate 101 in the area around the surface emitting laser. As an example, the light receiving element 115 is an avalanche photodiode (APD) made of SiGe having long wavelength sensitivity (having sensitivity in the eye safety band).

[0286] The distance measuring device 100 can be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 90 according to the ninth embodiment, except that the IC and the light receiving element 115 are formed on the substrate 101 .

[0287] According to the distance measuring device 100, a high-performance eye-safe TOF module including a surface emitting laser array including a plurality of light emitting units achieving effects similar to those of the surface emitting laser 10 according to the first embodiment and a light receiving element 115 having long wavelength sensitivity can be provided.

[0288] <11. Surface-emitting laser according to eleventh embodiment of the present technology>

[0289] Fig.39 1 is a cross-sectional view of a surface emitting laser 120 according to an eleventh embodiment of the present technology. Fig.39 As shown, the surface emitting laser 120 has a configuration substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the second reflector 108 is a semiconductor multilayer film reflector.

[0290] In the surface emitting laser 120, the second reflector 108 and the intermediate structure IST include different material systems. Specifically, in the surface emitting laser 120, the second reflector 108 includes a GaAs-based material, and the intermediate structure IST includes an InP-based material.

[0291] In the surface emitting laser 120, the first reflector 102 and the second reflector 108 include the same material system. Specifically, in the surface emitting laser 120, each of the first reflector 102 and the second reflector 108 includes a material system (GaAs system) that matches the GaAs lattice. Specifically, each of the first reflector 102 and the second reflector 108 is a GaAs-based semiconductor multilayer film reflector. The second reflector 108 is configured on the inner diameter side of the anode electrode 110. The GaAs-based semiconductor multilayer film reflector as the second reflector 108 can be, for example, undoped i-type or doped P-type doped. The second reflector 108 of the second structure ST2 and the third cladding 107 of the intermediate structure IST are bonded. A bonding layer can be formed between the second reflector 108 and the third cladding 107.

[0292] The surface emitting laser 120 can be manufactured by a manufacturing method substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the second reflector 108 and the third cladding layer 107 are bonded.

[0293] In the surface emitting laser 120, since a GaAs-based semiconductor multilayer film reflector is used as the second reflector 108, heat dissipation can be improved compared to the case where a dielectric multilayer film reflector is used.

[0294] According to the surface emitting laser 120 , it is possible to provide a surface emitting type surface emitting laser which is capable of obtaining effects similar to those of the surface emitting laser 10 according to the first embodiment and is suitable for high temperature operation.

[0295] <12. Surface-Emitting Laser According to Twelfth Embodiment of the Present Technology

[0296] Fig.40 1 is a cross-sectional view of a surface emitting laser 130 according to a twelfth embodiment of the present technology. Fig.40As shown, the configuration of the surface emitting laser 130 is basically similar to that of the surface emitting laser 120 according to the eleventh embodiment, except that an anode electrode 110 is provided as the second reflector 108 on a GaAs-based semiconductor multilayer film reflector.

[0297] In the surface emitting laser 130, the GaAs-based semiconductor multilayer film reflector as the second reflector 108 is doped with, for example, a P-type dopant. Therefore, current can flow from the anode electrode 110 to the intermediate structure IST via the second reflector 108.

[0298] The surface emitting laser 130 can be manufactured by a manufacturing method substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the second reflector 108 and the third cladding layer 107 are bonded and the anode electrode 110 is formed on the second reflector 108 .

[0299] In the surface emitting laser 130, since a GaAs-based semiconductor multilayer film reflector is used as the second reflector 108, heat dissipation can be improved compared to the case where a dielectric multilayer film reflector is used.

[0300] According to the surface emitting laser 130 , it is possible to provide a surface emitting type surface emitting laser which is capable of obtaining effects similar to those of the surface emitting laser 10 according to the first embodiment and is suitable for high temperature operation.

[0301] <13. Surface-emitting laser according to thirteenth embodiment of the present technology>

[0302] Fig.41 1 is a cross-sectional view of a surface emitting laser 140 according to a thirteenth embodiment of the present technology. Fig.41 As shown, the surface emitting laser 140 has a configuration substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the bottom surface of the mesa M coincides with the upper surface of the first reflector 102 .

[0303] In the surface emitting laser 140 , a GaAs-based semiconductor multilayer film reflector as the first reflector 102 is doped with an n-type dopant, and a cathode electrode 111 is provided on the first reflector 102 .

[0304] The surface emitting laser 140 may be manufactured by a manufacturing method substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the first cladding layer 103 is also etched when the mesa M is formed and the cathode electrode 111 is provided on the first reflector 102 .

[0305] According to the surface emitting laser 140 , it is possible to provide a surface emitting laser capable of obtaining effects similar to those of the surface emitting laser 10 according to the first embodiment.

[0306] <14. Surface-emitting laser according to fourteenth embodiment of the present technology>

[0307] Fig.42 1 is a cross-sectional view of a surface emitting laser 150 according to a fourteenth embodiment of the present technology. Fig.42 As shown, the surface emitting laser 150 has a configuration substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the surface emitting laser 150 has a mesa-less structure and a back electrode structure.

[0308] In the surface emitting laser 150 , the substrate 101 and the first reflector 102 are doped with n-type doping, and the cathode electrode 111 is firmly disposed on the rear surface of the substrate 101 .

[0309] The surface emitting laser 150 can be manufactured by a manufacturing method substantially similar to that of the surface emitting laser 10 according to the first embodiment, except that the mesa forming step is unnecessary and the cathode electrode 111 is provided on the back surface of the substrate 101 .

[0310] According to the surface emitting laser 150 , it is possible to provide a surface emitting type surface emitting laser which has a back electrode type mesa-less structure and is capable of obtaining effects similar to those of the surface emitting laser 10 according to the first embodiment.

[0311] <15. Surface-emitting laser according to fifteenth embodiment of the present technology>

[0312] Fig.43 1 is a cross-sectional view of a surface emitting laser 160 according to a fifteenth embodiment of the present technology. Fig.43 As shown in , the surface emitting laser 160 has a configuration substantially similar to that of the surface emitting laser 20 according to the second embodiment, except that the surface emitting laser 160 has a mesa-less structure.

[0313] In the surface emitting laser 160, a plurality of trenches TR (grooves) are formed in the peripheral portion of the intermediate structure IST. Here, the bottom surface of each trench TR is the upper surface of the first cladding layer 103, and the cathode electrode 111 is provided on the bottom surface. Note that a via (hole) may be provided instead of the trench TR. In addition, the bottom surface of the trench TR provided with the cathode electrode 111 may be located in the first cladding layer 103. In addition, when the first reflector 102 has conductivity, the bottom surface of the trench TR may be the upper surface of the first reflector 102 or may be located in the first reflector 102. In addition, for example, when the substrate 101 and the first reflector 102 have conductivity, the bottom surface of the trench TR may be the upper surface of the substrate 101 or may be located in the substrate 101.

[0314] An ion implantation region IIA surrounding the light emitting unit is provided in the intermediate structure IST. For example, in a plan view, a plurality of (e.g., two) ion implantation regions IIA are provided approximately concentrically. The ion implantation region IIA has a function of substantially insulating the cathode electrode 111 from a portion of the intermediate structure IST other than the first cladding layer 103 and a current limiting function. The anode electrode 110 is provided on the upper surface of the third cladding layer 107 in the region within the ion implantation region IIA.

[0315] The surface emitting laser 160 may be manufactured by a method substantially similar to the method of manufacturing the surface emitting laser 20 according to the second embodiment, except that the trench TR is formed and the cathode electrode 111 is provided on the bottom surface of the trench TR.

[0316] According to the surface emitting laser 160 , it is possible to provide a surface emitting type surface emitting laser having a mesa-free structure capable of obtaining effects similar to those of the surface emitting laser 20 according to the second embodiment.

[0317] <16. Surface-emitting laser according to sixteenth embodiment of the present technology>

[0318] Fig.44 1 is a cross-sectional view of a surface emitting laser 170 according to a sixteenth embodiment of the present technology. Fig.44 As shown, the surface emitting laser 170 has a configuration substantially similar to that of the surface emitting laser 160 according to the fifteenth embodiment except that it is a back-emitting type.

[0319] In the surface emitting laser 170, a through hole TH is provided at a position corresponding to the light emitting unit in the substrate 101. The surface emitting laser 170 includes a pad metal 116 having a portion in contact with the cathode electrode 111 and another portion provided on a region of the upper surface of the third cladding layer 107 around the side surface of the trench TR and the through hole TH. The surface emitting laser 170 also includes a plating metal 117 having a portion provided on the pad metal 116 and another portion exposed on the third cladding layer 107.

[0320] The reflectivity of the second reflector 108 is set to be slightly higher than the reflectivity of the first reflector 102 .

[0321] Since the anode electrode 110 and the cathode electrode 111 are exposed on the third cladding layer 107, the surface emitting laser 170 is suitable for flip-chip (junction-down) mounting on a laser driver.

[0322] The surface emitting laser 170 may be manufactured by a method substantially similar to the method of manufacturing the surface emitting laser 160 according to the fifteenth embodiment, except that the pad metal 116 and the plated metal 117 are formed in the trench TR, and the through hole TH is formed in the substrate 101 .

[0323] According to the surface emitting laser 170, effects similar to those of the surface emitting laser 10 according to the first embodiment can be obtained, and a back-emitting surface emitting laser having a mesa-free structure and easily flip-chip mounted on a laser driver can be provided.

[0324] <17. Surface-emitting laser according to seventeenth embodiment of the present technology>

[0325] Fig.45 17 is a cross-sectional view of a surface emitting laser 180 according to a seventeenth embodiment of the present technology. Fig.45 As shown, the configuration of the surface emitting laser 180 is substantially similar to that of the surface emitting laser 20 according to the second embodiment, except that the bottom surface of the mesa M coincides with the upper surface of the first reflector 102, and the ion implantation area IIA is not disposed at least above the third cladding layer 107.

[0326] In the surface emitting laser 180 , a GaAs-based semiconductor multilayer film reflector as the first reflector 102 is doped with an n-type dopant, and a cathode electrode 111 is provided on the first reflector 102 .

[0327] In the surface emitting laser 180 , an ion implantation region IIA is provided at least on the first cladding layer 103 , the active layer 104 , the second cladding layer 105 , and the tunnel junction layer 106 .

[0328] The surface emitting laser 180 can be manufactured by a manufacturing method substantially similar to the manufacturing method of the surface emitting laser 20 according to the second embodiment, except that the first cladding layer 103 is also etched when the mesa M is formed, the cathode electrode 111 is provided on the first reflector 102, and ion implantation is performed from the side corresponding to the first cladding layer 103.

[0329] According to the surface emitting laser 180 , effects similar to those of the surface emitting laser 20 according to the second embodiment can be obtained, and a surface emitting laser with higher efficiency and higher output can be provided.

[0330] <18. Modification of this Technology>

[0331] The present technology is not limited to the above-described embodiments, and various modifications may be made.

[0332] For example, the material of the substrate 101 is not limited to Ge, and may be any material as long as the material has a lattice constant greater than that of GaAs and smaller than that of AlAs.

[0333] For example, instead of InP-based materials, GaN-based materials (material systems lattice-matched to GaN) may be used for the intermediate structure IST.

[0334] In the surface emitting laser of each of the above embodiments, the conductivity types (p-type and n-type) of the first structure ST1 and the second structure ST2 can be interchanged. In this case, the Ge substrate as the substrate 101 can be undoped or doped with p-type doping. Examples of p-type impurities doped in the Ge substrate include group III elements (e.g., Ga). In the case where the first reflector 102 or the second reflector 108 is a p-type GaAs-based semiconductor stacked film reflector, Mg, C, Zn, etc., for example, can be used as a dopant (p-type impurity).

[0335] Some configurations of the surface emitting laser according to each of the above-described embodiments may be combined within a range in which they do not conflict with each other.

[0336] In each of the above-described embodiments, the material, conductivity type, thickness, width, length, shape, size, layout, etc. of each component constituting the surface emitting laser and the distance measuring device can be appropriately changed within the range of use as a surface emitting laser or a distance measuring device.

[0337] <19. Application examples of electronic devices>

[0338] The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure can be implemented as any type of mobile body, such as a car, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot, or implemented as a device installed on a low-power device (e.g., a smart phone, a tablet, a mouse, etc.).

[0339] The surface emitting laser according to the present technology can also be used as, for example, a light source of a device that forms or displays an image by laser (eg, a laser printer, a laser copier, a projector, a head-mounted display, a head-up display, etc.).

[0340] <20. Example of Surface Emitting Laser Applied to Distance Measuring Device>

[0341] Hereinafter, application examples of the surface emitting laser according to each of the above-described embodiments and modifications will be described.

[0342] Fig.47 An example of a schematic configuration of a distance measuring device 1000 including a surface emitting laser 10 as an example of an electronic device is shown. The distance measuring device 1000 measures the distance to an object S by a time-of-flight (TOF) method. The distance measuring device 1000 includes the surface emitting laser 10 as a light source. The distance measuring device 1000 includes, for example, the surface emitting laser 10, a light receiving device 125, lenses 119 and 135, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0343] The light receiving device 125 detects light reflected by the object S. The lens 119 is a lens for collimating light emitted from the surface emitting laser 10, and is a collimating lens. The lens 135 is a lens for converging light reflected by the object S and guiding the light to the light receiving device 125, and is a condensing lens.

[0344] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 155. The control unit 155 includes, for example, a time digital converter (TDC). The reference signal may be a signal input from the control unit 155, or may be an output signal of a detection unit that directly detects the output of the surface emitting laser 10. For example, the control unit 155 is a processor that controls the surface emitting laser 10, the light receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit for measuring the distance to the object S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the object S, and outputs the video signal to the display unit 165. The display unit 165 displays information about the distance to the object S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the object S in the storage unit 175.

[0345] In the present application example, instead of the surface emitting laser 10, any one of the surface emitting lasers 10, 20, 30-1, 30-2, 30-3, 40-1, 40-2, 40-3, 50, 60-1, 60-2, 60-3, 70, 80, 90, 120, 130, 140, 150, 160, 170, 180 and the distance measuring device 100 may be applied to the distance measuring device 1000.

[0346] <21. Example of Distance Measuring Device Mounted on Moving Object>

[0347] Fig.48 is a block diagram describing an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to the embodiment of the present disclosure can be applied.

[0348] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Fig.48 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an inside information detection unit 12040, and an integrated control unit 12050. In addition, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown as a functional configuration of the integrated control unit 12050.

[0349] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 is a control device for a drive force generating device for generating a drive force of the vehicle (e.g., an internal combustion engine, a drive motor, etc.), a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, and the like.

[0350] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as a headlight, a backup light, a brake light, a turn signal, a fog light, etc. In this case, a radio wave or a signal of various switches transmitted from a mobile device as a substitute for a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of the radio wave or the signal and controls the door locking device, the power window device, the lights, etc. of the vehicle.

[0351] The vehicle exterior information detection unit 12030 detects information outside the vehicle including the vehicle control system 12000. For example, a distance measuring device 12031 is connected to the vehicle exterior information detection unit 12030. The distance measuring device 12031 includes the above-mentioned distance measuring device 1000. The vehicle exterior information detection unit 12030 causes the distance measuring device 12031 to measure the distance to an object (object S) outside the vehicle, and obtains distance data obtained by the measurement. The vehicle exterior information detection unit 12030 can perform object detection processing such as a person, a car, an obstacle, a sign, etc. based on the obtained distance data.

[0352] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the state of the driver. The driver state detection unit 12041 has, for example, a camera that photographs the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue or the driver's concentration, or can determine whether the driver is dozing off.

[0353] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information about the inside or outside of the vehicle obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), which includes collision prevention or shock absorption for the vehicle, follow-up driving based on the following distance, maintaining the vehicle speed for driving, warning of vehicle collision, warning of vehicle deviation from the lane, etc.

[0354] In addition, the microcomputer 12051 can perform collaborative control for automatic driving by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about outside or inside the vehicle obtained by the outside information detection unit 12030 or the inside information detection unit 12040, thereby enabling the vehicle to travel automatically without relying on the driver's operation, etc.

[0355] In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle obtained by the vehicle outside information detection unit 12030. For example, the microcomputer 12051 can perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam according to the position of the front vehicle or the oncoming vehicle detected by the vehicle outside information detection unit 12030.

[0356] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device that can visually or auditorily notify the occupants of the vehicle or the outside of the vehicle of information. Fig.48 In the example of FIG. 1 , an audio speaker 12061, a display unit 12062, and a dashboard 12063 are shown as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0357] Fig.49 This is a diagram showing an example of the installation position of the distance measuring device 12031.

[0358] exist Fig.49 In the figure, vehicle 12100 includes ranging devices 12101, 12102, 12103, 12104 and 12105 as ranging device 12031.

[0359] For example, the distance measuring devices 12101, 12102, 12103, 12104 and 12105 are arranged at positions such as the front nose, side mirrors, rear bumper, rear door, upper part of the windshield inside the vehicle 12100, etc. The distance measuring device 12101 arranged at the front nose inside the vehicle and the distance measuring device 12105 arranged at the upper part of the windshield mainly obtain data of the front side of the vehicle 12100. The distance measuring devices 12102 and 12103 arranged at the side mirrors mainly obtain data of the side of the vehicle 12100. The distance measuring device 12104 arranged at the rear bumper or rear door mainly obtains data of the rear side of the vehicle 12100. The data of the front side obtained by the distance measuring devices 12101 and 12105 are mainly used to detect the front vehicle, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0360] It should be noted that Fig.49 There are shown examples of detection ranges of the ranging devices 12101 to 12104. Detection range 12111 indicates the detection range of the ranging device 12101 provided at the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the ranging devices 12102 and 12103 provided at the side mirrors, respectively, and detection range 12114 indicates the detection range of the ranging device 12104 provided at the rear bumper or the rear door.

[0361] For example, the microcomputer 12051 can obtain the distance to each three-dimensional object within the detection range 12111 to 12114 and the time change of the distance (relative speed relative to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104, thereby, in particular, the nearest three-dimensional object existing on the driving path of the vehicle 12100 in the same direction as the vehicle 12100 at a prescribed speed (for example, greater than or equal to 0 km / h) can be extracted as the front vehicle. In addition, the microcomputer 12051 can pre-set the following distance to keep in front of the front vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. As a result, coordinated control for automatic driving for autonomous driving, etc. can be performed without relying on the driver's operation.

[0362] For example, the microcomputer 12051 can classify the three-dimensional object data related to the three-dimensional object into three-dimensional objects such as two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, etc. based on the distance data obtained from the distance measuring devices 12101 to 12104, extract the three-dimensional object data, and use the three-dimensional object data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that can be visually recognized by the driver of the vehicle 12100 and obstacles that are difficult for the driver of the vehicle 12100 to visually recognize. Then, the microcomputer 12051 can determine the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than the set value and there is a possibility of collision, provide driving assistance for collision prevention by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration and evasive steering via the drive system control unit 12010.

[0363] An example of a mobile control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present application can be applied to the distance measuring device 12031 in the above structure.

[0364] Furthermore, the present technology can also adopt the following configurations.

[0365] (1) A surface emitting laser comprising:

[0366] Resonator, including:

[0367] a first structure including a substrate and a first reflector stacked on each other;

[0368] a second structure including a second reflector and disposed on a side of the first structure corresponding to the first reflector; and

[0369] an intermediate structure including an active layer and disposed between the first and second structures, wherein

[0370] The substrate includes a material having a lattice constant greater than that of GaAs and less than that of AlAs, and

[0371] The first reflector and the intermediate structure comprise different material systems.

[0372] (2) The surface emitting laser according to (1), wherein the first reflector includes a material system lattice-matched to GaAs, and the intermediate structure includes a material system lattice-matched to InP.

[0373] (3) The surface emitting laser according to (1) or (2), wherein the substrate includes Ge.

[0374] (4) The surface emitting laser according to any one of (1) to (3), wherein the first structure and the intermediate structure are combined.

[0375] (5) The surface emitting laser according to (4), wherein an adhesive layer is formed between the first structure and the intermediate structure.

[0376] (6) A surface emitting laser according to any one of (1) to (5), wherein the intermediate structure includes a tunnel junction layer stacked on the active layer, the intermediate structure includes a confinement portion configured to at least confine current, and the confinement portion includes a high resistance region or an insulating region present in a peripheral portion of at least a portion of the intermediate structure in a thickness direction.

[0377] (7) The surface emitting laser according to (6), wherein the confinement portion includes an ion implantation region.

[0378] (8) The surface emitting laser according to (6) or (7), wherein the confinement portion includes a high resistance region or an insulating region present around at least the tunnel junction layer.

[0379] (9) The surface emitting laser according to any one of (6) to (8), wherein the tunnel junction layer has a mesa shape, and the confinement portion includes a high resistance region present around the tunnel junction layer.

[0380] (10) The surface emitting laser according to any one of (6) to (9), wherein the confinement portion includes an insulating region present around the tunnel junction layer.

[0381] (11) The surface emitting laser according to any one of (6) to (10), wherein the tunnel junction layer includes an InAlAs layer, and the insulating region exists around the InAlAs layer.

[0382] (12) The surface emitting laser according to any one of (6) to (11), wherein the insulating region includes an oxidized region.

[0383] (13) The surface emitting laser according to any one of (6) to (12), wherein the insulating region includes a void.

[0384] (14) The surface emitting laser according to any one of (1) to (13), wherein the active layer includes a quantum dot active layer.

[0385] (15) The surface emitting laser according to any one of (6) to (14), wherein the limiting portion is ring-shaped, the substrate includes a through hole at a position corresponding to a region surrounded by the limiting portion, and the surface emitting laser is configured to emit light to a back side of the substrate.

[0386] (16) The surface emitting laser according to any one of (6) to (15), wherein the tunnel junction layer is provided on a side of the active layer opposite to the substrate.

[0387] (17) The surface emitting laser according to any one of (6) to (16), wherein the tunnel junction layer is provided on a side of the active layer corresponding to the substrate.

[0388] (18) The surface emitting laser according to any one of (6) to (17), wherein the intermediate structure includes a plurality of semiconductor structures stacked on one another, and each of the plurality of semiconductor structures includes an active layer and a tunnel junction layer.

[0389] (19) The surface emitting laser according to any one of (6) to (18), wherein the intermediate structure includes a plurality of confinement portions arranged in an in-plane direction.

[0390] (20) A distance measuring device comprising:

[0391] The surface emitting laser according to any one of (1) to (19); and

[0392] A light receiving element is provided on the substrate of the surface emitting laser.

[0393] (21) The distance measuring device according to (20), wherein the light receiving element includes a material including at least SiGe.

[0394] (22) The surface emitting laser according to any one of (1) to (21), wherein the second reflector and the intermediate structure include different material systems.

[0395] (23) The surface emitting laser according to any one of (1) to (22), wherein the first reflector and the second reflector include the same material system.

[0396] (24) The surface emitting laser according to any one of (1) to (23), wherein the second reflector includes a material system lattice matched to GaAs.

[0397] (25) The surface emitting laser according to any one of (1) to (24), wherein the second structure and the intermediate structure are combined.

[0398] (26) The surface emitting laser according to any one of (1) to (25), wherein the second reflector includes a dielectric multilayer film reflector.

[0399] (27) A method for manufacturing a surface emitting laser, the method comprising the following steps:

[0400] producing a first laminate by stacking a first reflector comprising a first material system on a first substrate comprising a material having a lattice constant greater than GaAs and less than AlAs;

[0401] generating a second laminate by forming a stack structure comprising a second material system and including an active layer and a second reflector on a second substrate;

[0402] removing at least the second substrate from the second laminate;

[0403] A surface of a side of the first laminated plate corresponding to the first reflector and a surface of a side of the second laminated plate corresponding to the stacked structure are joined to face each other.

[0404] (28) A method for manufacturing a surface emitting laser, the method comprising the steps of:

[0405] producing a first laminate by stacking a first reflector comprising a first material system on a first substrate comprising a material having a lattice constant greater than GaAs and less than AlAs;

[0406] producing a joined body by bonding a surface of a side of the first laminate corresponding to the first reflector and one surface of the second substrate so as to face each other;

[0407] removing a portion of the second substrate from the bonded body; and

[0408] A stack structure including a second material system and a second reflector is formed on another portion of the second substrate bonded to the body.

[0409] Reference Symbols List

[0410] 10, 20, 30-1, 30-2, 30-3, 40, 40-1, 40-2, 40-3, 50, 60-1, 60-2, 60-3, 70, 80, 90, 110, 120, 130, 140, 150, 160, 170, 180 surface emitting laser

[0411] 100 Distance measuring device

[0412] 101 Substrate

[0413] 102 First reflector

[0414] 104 Active layer

[0415] 106 Tunnel Junction Layer

[0416] 106a2 Oxidation area (restricted part)

[0417] 106b2 Oxidation area (restricted part)

[0418] 107 Third coating layer (restricted part)

[0419] 108 Second reflector

[0420] ST1 First Structure

[0421] ST2 Second structure

[0422] IST intermediate structure

[0423] R Resonator

[0424] IIA ion implantation area (restricted part)

[0425] V gap (restricted part).

Claims

1. A surface emitting laser comprising: Resonator, including: a first structure including a substrate and a first reflector stacked on each other; a second structure including a second reflector and disposed on a side of the first structure corresponding to the first reflector; as well as an intermediate structure including an active layer and disposed between the first and second structures, wherein the substrate includes a material having a lattice constant greater than that of GaAs and less than that of AlAs, and The first reflector and the intermediate structure comprise different material systems.

2. The surface emitting laser according to claim 1, wherein The first reflector comprises a material system lattice matched to GaAs, and The intermediate structure includes a material system that is lattice matched to InP.

3. The surface emitting laser according to claim 1, wherein The substrate includes Ge.

4. The surface emitting laser according to claim 1, wherein The first structure and the intermediate structure are bonded.

5. The surface emitting laser according to claim 4, wherein An adhesive layer is formed between the first structure and the intermediate structure.

6. The surface emitting laser according to claim 1, wherein The intermediate structure includes a tunnel junction layer stacked on the active layer, The intermediate structure includes a limiting portion configured to at least limit current, and the limiting portion includes a high resistance region or an insulating region present in a peripheral portion of at least a portion of the intermediate structure in a thickness direction.

7. The surface emitting laser according to claim 6, wherein The confinement portion includes an ion implantation region.

8. The surface emitting laser according to claim 6, wherein The confinement portion includes the high resistance region or the insulating region at least present around the tunnel junction layer.

9. The surface emitting laser according to claim 8, wherein The tunnel junction layer has a mesa shape, and The confinement portion includes the high resistance region present around the tunnel junction layer.

10. The surface emitting laser according to claim 8, wherein The confinement portion includes the insulating region present around the tunnel junction layer.

11. The surface emitting laser according to claim 8, wherein The tunnel junction layer includes an InAlAs layer, and an insulating region exists around the InAlAs layer.

12. The surface emitting laser according to claim 10, wherein The insulating region includes an oxidized region.

13. The surface emitting laser according to claim 10, wherein The insulating region includes a void.

14. The surface emitting laser according to claim 1, wherein The active layer includes a quantum dot active layer.

15. The surface emitting laser according to claim 6, wherein The limiting portion is annular, The substrate includes a through hole at a position corresponding to a region surrounded by the limiting portion, and The surface emitting laser is configured to emit light to a back side of the substrate.

16. The surface emitting laser according to claim 6, wherein The tunnel junction layer is disposed on a side of the active layer opposite to the substrate.

17. The surface emitting laser according to claim 6, wherein The tunnel junction layer is located on a side of the active layer corresponding to the substrate.

18. The surface emitting laser according to claim 6, wherein The intermediate structure includes a plurality of semiconductor structures stacked on top of each other, and Each of the plurality of semiconductor structures includes the active layer and the tunnel junction layer.

19. The surface emitting laser according to claim 6, wherein The intermediate structure includes a plurality of restriction portions arranged in an in-plane direction.

20. A distance measuring device, comprising: The surface emitting laser according to claim 1; as well as A light receiving element is provided on the substrate of the surface emitting laser.

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