Control method and control system for a heating-type laser

Abstract

This invention provides a control method and control system for a heated laser. The method includes: pre-constructing a laser operating temperature relationship model and pre-configuring corresponding laser off-time t1 and laser on-time t0; acquiring the ambient temperature parameter x detected in real time by thermistor I. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the temperature difference parameter, the temperature difference parameter corresponding to the heated laser is determined; based on the temperature difference parameter and the external ambient temperature parameter x... i The real-time target operating temperature parameters of the heated laser are determined; based on the real-time target operating temperature parameters and the pre-configured laser off time t1 and laser on time t0, the heated laser is controlled so that the position of the absorption pit meets the preset conditions, thereby improving the detection accuracy.

Description

Technical Field

[0001] This invention relates to the field of laser gas sensing technology, and more specifically, to a control method and control system for a heated laser. Background Technology

[0002] In recent years, laser gas sensing technology has become a hot topic in the field of gas detection. Compared with traditional non-laser sensing technologies, laser gas detection methods have advantages such as high sensitivity, high detection accuracy, good operational stability, resistance to external interference, and good environmental adaptability. Tunable Diode Laser Absorption Spectroscopy (TDLAS) is one of the most widely used methods in laser gas sensing technology. It utilizes a tunable semiconductor laser to accurately measure the absorption spectrum of gas molecules, thereby retrieving the concentration of the gas to be measured. The main components of a TDLAS system include a tunable semiconductor laser, a laser controller, a beam splitter, a gas cell, a photodetector, and a computer. Among these, the tunable semiconductor laser, the reference gas cell, and the reference detector are the key components of the TDLAS system, accounting for the majority of its cost. To reduce the cost of a TDLAS system, it is essential to design a TDLAS system based on a heated laser without a reference gas cell and without a reference detector.

[0003] It should be noted that in a TDLAS system, the location of the absorption pit is not only an important indicator for identifying the type of gas, but also a crucial basis for measuring gas concentration. By accurately measuring and analyzing the location and depth information of the absorption pit, high-sensitivity and high-accuracy gas detection can be achieved. Currently, the common approach to laser gas detection is to adjust the absorption pit position of the main path signal to a fixed position in real time by demodulating the absorption pit position of the reference detector signal after passing through the reference gas chamber. However, TDLAS systems based on heated lasers without a reference gas chamber or reference detector cannot adjust the absorption pit position based on the reference detector signal after the reference gas chamber. Therefore, how to quickly and accurately control the heated laser and simultaneously adjust the absorption pit position in the absence of a reference gas chamber and reference detector has become a pressing technical problem to be solved.

[0004] In order to solve the above problems, people have been seeking an ideal technological solution. Summary of the Invention

[0005] Therefore, it is necessary to provide a control method and control system for a heated laser to address the above-mentioned technical problems. The heated laser is controlled based on real-time target operating temperature parameters and pre-configured laser off-time t1 and laser on-time t0 to ensure that the position of the absorption pit meets the preset conditions, thereby controlling the heated laser quickly and accurately.

[0006] To achieve the above objectives, a first aspect of the present invention provides a control method for a heated laser, the method comprising: pre-constructing a laser operating temperature relationship model, and pre-configuring corresponding laser off-time t1 and laser on-time t0; wherein the laser operating temperature relationship model is expressed as Δ AD =a1×x-a2,Δ AD The temperature difference parameter corresponding to the heated laser is represented by x, the ambient temperature parameter reflected by the thermistor I is represented by a1, the first temperature coefficient is represented by a2, and the second temperature coefficient is represented by a2.

[0007] Obtain the ambient temperature parameter x detected in real time by thermistor I. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the laser's operating temperature, the temperature difference parameter Δ corresponding to the heated laser is determined. i Wherein, the temperature difference parameter Δ i This refers to the difference between the ambient temperature parameter reflected by the thermistor I and the laser target operating temperature parameter;

[0008] Based on temperature difference parameter Δ i and the external ambient temperature parameter x i The real-time target operating temperature parameter of the heated laser is determined; wherein, the real-time target operating temperature parameter = the ambient temperature parameter x i - The temperature difference parameter Δ i ;

[0009] The heating laser is controlled based on the real-time target operating temperature parameters and the pre-configured laser off time t1 and laser on time t0 to ensure that the position of the absorption pit meets the preset conditions.

[0010] To achieve the above objectives, a second aspect of the present invention provides a control system for a heated laser, comprising a configuration module, a real-time temperature difference determination module, a real-time target operating temperature determination module, and a control module, wherein...

[0011] The configuration module is used to pre-build a laser operating temperature relationship model and pre-configure the corresponding laser off-time t1 and laser on-time t0; wherein, the laser operating temperature relationship model is expressed as Δ AD=a1×x-a2,Δ AD The temperature difference parameter corresponding to the heated laser is represented by x, the ambient temperature parameter reflected by the thermistor I is represented by a1, the first temperature coefficient is represented by a2, and the second temperature coefficient is represented by a2.

[0012] The real-time temperature difference determination module is used to acquire the ambient temperature parameter x detected in real time by the thermistor I. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the laser's operating temperature, the temperature difference parameter Δ corresponding to the heated laser is determined. i Wherein, the temperature difference parameter Δ i This refers to the difference between the ambient temperature parameter reflected by the thermistor I and the laser target operating temperature parameter;

[0013] The real-time target operating temperature determination module is used to determine the temperature based on the temperature difference parameter Δ. i and the external ambient temperature parameter x i Determine the real-time target operating temperature parameter of the heated laser; wherein, the real-time target operating temperature parameter = the ambient temperature parameter x i - The temperature difference parameter Δ i ;

[0014] The control module is used to control the heated laser based on the real-time target operating temperature parameter and the pre-configured laser off time t1 and laser on time t0, so that the position of the absorption pit meets the preset conditions.

[0015] To achieve the above objectives, a third aspect of the present invention provides a computer device comprising a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other via the communication bus; the memory is used to store computer programs; and the processor, when executing the program stored in the memory, implements the control method for the heating laser as described above.

[0016] To achieve the above objectives, a fourth aspect of the present invention provides a readable storage medium having instructions stored thereon that, when executed by one or more processors, cause the processors to perform the control method for a heated laser as described above.

[0017] The beneficial effects of this invention are as follows:

[0018] This invention controls a heated laser by pre-constructing a laser operating temperature relationship model and pre-configuring the laser off-time t1 and laser on-time t0 corresponding to the laser operating temperature relationship model; this invention first determines the external ambient temperature parameter x. iThe model relating the laser's operating temperature determines the corresponding temperature difference parameter Δ. i Then based on the temperature difference parameter Δ i and external environmental temperature parameter x i The real-time target operating temperature parameters are determined; the present invention also pre-configures the laser turn-off time t1, the laser turn-on time t0 and the corresponding driving waveform, and makes the position of the absorption pit in the t0 segment waveform in the middle position.

[0019] Therefore, in the absence of a reference gas chamber and a reference detector, this invention achieves the effect of simultaneously adjusting the position of the absorption pit by dynamically adjusting the operating temperature of the heated laser, thereby enabling rapid and accurate control of the heated laser. Attached Figure Description

[0020] Figure 1 This is a schematic flowchart of the control method for the heated laser of the present invention;

[0021] Figure 2 This is a schematic diagram of the control system of the heating laser of the present invention;

[0022] Figure 3 This is a schematic diagram of the structure of the heating laser of the present invention;

[0023] Figure 4 This is a schematic diagram of the laser operating temperature relationship model of the present invention;

[0024] Figure 5 This is a schematic diagram of the single-cycle laser drive waveform output by the DAC (the horizontal axis represents the number of sampling points, and the vertical axis represents the waveform amplitude).

[0025] In the diagram: 1. Tube base; 2. Tube cap; 3. Tube pin; 4. Lens; 5. Laser chip; 6. Thermistor II; 7. Heating resistor; 8. Optical path reversal structure; 9. Heat sink; 10. Thermistor I. Detailed Implementation

[0026] The technical solution of the present invention will be further described in detail below through specific embodiments.

[0027] To facilitate understanding, the interactive parties and / or terms and / or custom terms involved in this invention will first be explained in conjunction with the technical solution of this invention:

[0028] Heated laser: Includes lens 4, laser chip 5, thermistor II 6, heating resistor 7, optical path reversing structure 8, heat sink 9, tube cap 2, tube base 1, and pins 3, etc. The heat sink 9 is mounted on the tube base 1. The laser chip 5, thermistor II 6, heating resistor 7, and optical path reversing structure 8 are mounted on the heat sink 9. The lens 4 is embedded in the tube cap 2. The tube cap 2 and the tube base 1 are sealed together, as shown in the attached diagram. Figure 3 As shown; the laser chip 5 is used to output laser light, the optical path reversing structure 8 is used to change the laser light emitted by the laser chip from horizontal to vertical emission, the lens 4 is used to shape the laser beam, the heating resistor 7 is used to increase the internal temperature of the heated laser, the thermistor II 6 is used to detect the internal temperature of the heated laser, and the heat sink 9 is used to absorb the heat generated when the laser is working and quickly dissipate the heat to ensure the normal operation of the laser.

[0029] Thermistor I: Located near the heated laser and on the laser control board inside the sensor that integrates the heated laser; used to detect the ambient temperature around the heated laser and can reflect the external ambient temperature parameters.

[0030] Absorption pits: These are depressions or attenuation regions that appear at specific locations on a waveform, representing the absorption of light by the gas being tested at specific frequencies or wavelengths.

[0031] The driving waveform period T0 refers to the time of one driving waveform output by the heating laser; T0 = t1 + t0, where t1 is the laser off time and t0 is the laser on time; the longer the laser off time and the shorter the on time, the less heat is generated inside the laser during the overall off and on time period.

[0032] The pre-configured laser off time t1 and laser on time t0 are not equal, such as laser off time t1 > laser on time t0.

[0033] It should be noted that the laser turn-off time t1 is the same for the same model of heated laser, and the laser turn-on time t0 is the same for the same model of heated laser. The laser turn-off time t1 may be the same or different for different models of heated laser; the laser turn-on time t0 may be the same or different for different models of heated laser. Specifically, the laser turn-off time t1 and laser turn-on time t0 determined when establishing the laser operating temperature relationship model shall prevail (at this time, the external temperature reflected by the thermistor I10 is within the set laser operating temperature range, and the position where the absorption pit appears in the waveform of segment t0 is the middle position).

[0034] Driving waveform: The driving waveform of a laser has a significant impact on its performance and stability, and mainly includes DC, triangular wave, sawtooth wave, and pulse waveform. The driving waveform pre-stored in this invention refers to the driving waveform corresponding to the laser off-time t1 and the laser on-time t0. The driving waveform output by the heating laser is shown in the attached figure. Figure 5 As shown.

[0035] Laser operating temperature relationship model: refers to the relationship model between "the ambient temperature parameter reflected by the thermistor I10" and "the temperature difference parameter between the ambient temperature and the target operating temperature", and is related to the pre-configured laser off time t1 and laser on time t0.

[0036] As attached Figure 4 As shown, the horizontal axis represents the external ambient temperature parameter x. i Specifically, this refers to the ambient temperature AD value measured by the thermistor I10 (this AD value refers to the AD sample value obtained after the output value of the thermistor I is converted by an ADC (Analog-to-Digital Converter) circuit, etc.);

[0037] As attached Figure 4 As shown, the vertical axis represents the temperature difference parameter Δ corresponding to the heated laser. i Specifically, this refers to the difference between the ambient temperature parameter reflected by the thermistor I10 and the target operating temperature parameter of the laser (the difference between the ambient temperature AD value measured by thermistor I and the target operating temperature AD value of the laser).

[0038] Example 1

[0039] This embodiment provides a specific implementation method for controlling a heated laser, as shown in the attached figure. Figure 1 As shown; the control method includes:

[0040] A laser operating temperature relationship model is pre-constructed, and the corresponding laser off-time t1 and laser on-time t0 are pre-configured; wherein, the laser operating temperature relationship model is expressed as Δ AD =a1×x-a2,Δ AD The temperature difference parameter corresponding to the heated laser is represented by x, the ambient temperature parameter reflected by the thermistor I10 is represented by a1, and the first temperature coefficient is represented by a2.

[0041] The ambient temperature parameter x is obtained in real time from the thermistor I10. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the laser's operating temperature, the temperature difference parameter Δ corresponding to the heated laser is determined. i;

[0042] Based on temperature difference parameter Δ i and the external ambient temperature parameter x i Determine the real-time target operating temperature parameter of the heated laser; wherein, the real-time target operating temperature parameter = the ambient temperature parameter x i - The temperature difference parameter Δ i ;

[0043] The heating laser is controlled based on the real-time target operating temperature parameters and the pre-configured laser off time t1 and laser on time t0 to ensure that the position of the absorption pit meets the preset conditions.

[0044] It should be noted that the absorption pit position meets the preset conditions, which means that when there is target gas, during the laser wavelength scanning process, the position of the absorption pit in the t0 segment waveform is in the middle of the t0 segment waveform.

[0045] It should be noted that, by pre-configuring the laser off-time t1, laser on-time t0, and the corresponding laser off-time t1 and laser on-time t0, the present invention controls the heated laser based on the real-time target operating temperature parameter and the pre-configured laser off-time t1 and laser on-time t0 after the heated laser is started, so that the position of the absorption pit detected by the detector meets the preset conditions, thereby quickly and accurately controlling the heated laser in the absence of a reference gas chamber and a reference detector.

[0046] In some embodiments, controlling a heated laser based on a pre-configured laser off-time t1 and laser on-time t0 includes:

[0047] The driving waveforms corresponding to the pre-stored laser off time t1 and laser on time t0;

[0048] After the heated laser is started, the heated laser outputs a pre-stored driving waveform; wherein the driving waveform refers to the driving waveform corresponding to the laser off time t1 and the laser on time t0, and the pre-configured laser off time t1 and laser on time t0 are not equal.

[0049] For example, in actual products, the laser off time t1 is 10 milliseconds and the laser on time t0 is 5 milliseconds.

[0050] It should be noted that the two operations of outputting the pre-stored driving waveform of the heating laser and adjusting the operating temperature of the heating laser can be performed in parallel to improve the response speed.

[0051] In some embodiments, controlling the heated laser based on the real-time target operating temperature parameter includes:

[0052] Based on the real-time target operating temperature parameters, the operating temperature of the heated laser is dynamically adjusted using the heating resistor inside the heated laser.

[0053] It should be noted that the operating temperature of a heated laser is usually higher than the operating temperature of the sensor that integrates the heated laser. Therefore, the target operating temperature of the heated laser will also be higher than the temperature reflected by the thermistor I. Once the real-time target operating temperature parameter (laser target operating temperature) is determined, the operating temperature of the heated laser can be dynamically adjusted by the heating resistor inside the laser.

[0054] For example, if the target operating temperature of the heated laser is 60℃ (the temperature value obtained after converting the real-time target operating temperature parameter), and the ambient temperature reflected by the thermistor I10 collected by the processor is 40℃, then the proportional-integral-differential algorithm and the heating resistor control circuit are used to raise the temperature near the heated laser to 60℃.

[0055] It should also be noted that this invention is based on the external environmental temperature parameter x. i The model relating the laser's operating temperature determines the corresponding temperature difference parameter Δ. i Then based on the temperature difference parameter Δ i and external environmental temperature parameter x i Determining the real-time target operating temperature parameter improves the accuracy of the target operating temperature and further enhances detection accuracy.

[0056] It should also be noted that the value of the first temperature coefficient a1 ranges from 0.9 to 1, and the value of the second temperature coefficient a2 ranges from 660 to 700.

[0057] Example 2

[0058] Based on Example 1, this embodiment provides a specific implementation method for pre-constructing a laser operating temperature relationship model;

[0059] Specifically, when pre-building the laser operating temperature relationship model, the following steps are performed:

[0060] (1) Using equipment such as an annular gas chamber and an infrared analyzer, a test environment was built to study the working temperature relationship model of lasers;

[0061] (2) Determine the driving current range for the target gas based on the laser's datasheet, and adopt... Figure 5The target laser is driven using the laser driving method described in the text. First, the laser off-time t1 is set to be equal to the laser on-time t0. When target gas is present, the position of the absorption pit appearing in the t0 segment of the waveform is set to its middle position.

[0062] (3) Set the temperature of the annular gas chamber to the highest operating ambient temperature of the laser gas sensor, introduce a certain concentration of target gas, and adjust the position of the absorption pit in the t0 segment waveform by changing the operating temperature of the laser. The problems at this time are: (1) No matter how the operating temperature of the laser is changed, the position of the absorption pit in the t0 segment waveform is not in the middle; (2) The temperature fed back by the thermistor I10 gradually exceeds the maximum value of the set laser operating temperature;

[0063] (4) To solve the problem in (3), while keeping the driving waveform of segment t0 unchanged, gradually increase the laser turn-off time t1 so that the temperature fed back by the thermistor I10 is within the set operating temperature range of the laser, and make the position of the absorption pit in segment t0 the middle position. The "waveform of laser turn-off time t1 and laser turn-on time t0" under this condition is used as the final driving waveform of the laser. Record the operating temperature of the laser at this time as the target operating temperature parameter, and record the AD value reflected by the thermistor I collected by the processor as the external ambient temperature parameter.

[0064] (5) Keep the laser off time t1 and laser on time t0 unchanged;

[0065] While keeping the concentration of the target gas constant, the operating temperature of the annular gas chamber is changed every 10°C. By changing the operating temperature of the laser, the temperature fed back by the thermistor I10 is made to be in the middle position between the set laser operating temperature range and the position where the absorption pit appears in the waveform of segment t0. The target operating temperature parameters of the laser and the external ambient temperature parameters reflected by the thermistor I10 are recorded at this time.

[0066] (6) Establish a model relating the ambient temperature parameters of the thermistor I reaction to the temperature difference parameters of the heating laser, and pre-store it in the laser control board.

[0067] It should be noted that different ambient temperature parameters correspond to different target operating temperature parameters for the laser. When pre-constructing the laser operating temperature relationship model, different target operating temperature parameters are set for different ambient temperature parameters under different chamber temperatures. Specifically, the lower the ambient temperature, the higher the target operating temperature of the laser.

[0068] In one specific embodiment, the correspondence between the ambient temperature parameter and the temperature difference parameter corresponding to the heated laser is shown in the table below:

[0069]

[0070] The laser operating temperature relationship model fitted based on the data in the table above is expressed as: Δ AD =0.9899x - 690.81, at this time, a1 is 0.9899 and a2 is 690.81; see attached. Figure 4 As shown, the vertical axis represents the temperature difference parameter Δ corresponding to the heated laser. AD The horizontal axis represents the ambient temperature parameter reflected by the thermistor I10;

[0071] For example, the ambient temperature parameter x detected in real time by thermistor I. i The value is 1600. Based on the laser operating temperature relationship model, the temperature difference parameter Δ corresponding to the heated laser is obtained. i The value is 893.03, thus determining the real-time target operating temperature parameter of the heated laser as 1600 - 893.03 = 706.97.

[0072] When determining the real-time target operating temperature parameters, and subsequently dynamically adjusting the operating temperature of the heated laser based on the real-time target operating temperature parameters, it is not necessary to convert the AD value to the unit of ℃. This is to save processing time and improve response speed.

[0073] In another specific embodiment, the correspondence between the ambient temperature parameter and the temperature difference parameter corresponding to the heated laser is shown in the table below:

[0074]

[0075] The laser operating temperature relationship model fitted based on the data in the table above is expressed as: Δ AD =0.9903x - 661.02, at this time a1 is 0.9903 and a2 is 661.02; the vertical axis represents the temperature difference parameter Δ corresponding to the heated laser. AD The horizontal axis represents the ambient temperature parameter reflected by thermistor I;

[0076] For example, the ambient temperature parameter x detected in real time by thermistor I. i The value is 1800. Based on the laser operating temperature relationship model, the temperature difference parameter Δ corresponding to the heated laser is obtained. i The value is 1121.52, thus determining the real-time target operating temperature parameter of the heated laser as 1800 - 1121.52 = 670.48.

[0077] Example 3

[0078] Based on the same inventive concept, this embodiment provides a specific implementation of a control system for a heated laser. The solution provided by this control system is similar to the solution described in the above method; therefore, the specific limitations in one or more control system embodiments provided below can be found in the limitations of the control method for the heated laser described above, and will not be repeated here.

[0079] As attached Figure 2 As shown, the control system of the heated laser includes a configuration module, a real-time temperature difference determination module, a real-time target operating temperature determination module, and a control module, wherein...

[0080] The configuration module is used to pre-build a laser operating temperature relationship model and pre-configure the corresponding laser off-time t1 and laser on-time t0; wherein, the laser operating temperature relationship model is expressed as Δ AD =a1×x-a2,Δ AD The temperature difference parameter corresponding to the heated laser is represented by x, the ambient temperature parameter reflected by the thermistor I is represented by a1, the first temperature coefficient is represented by a2, and the second temperature coefficient is represented by a2.

[0081] The real-time temperature difference determination module is used to acquire the ambient temperature parameter x detected in real time by the thermistor I. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the laser's operating temperature, the temperature difference parameter Δ corresponding to the heated laser is determined. i Wherein, the temperature difference parameter Δ i This refers to the difference between the ambient temperature parameter reflected by the thermistor I and the laser target operating temperature parameter;

[0082] The real-time target operating temperature determination module is used to determine the temperature based on the temperature difference parameter Δ. i and the external ambient temperature parameter x i Determine the real-time target operating temperature parameter of the heated laser; wherein, the real-time target operating temperature parameter = the ambient temperature parameter x i - The temperature difference parameter Δ i ;

[0083] The control module is used to control the heated laser based on the real-time target operating temperature parameter and the pre-configured laser off time t1 and laser on time t0, so that the position of the absorption pit meets the preset conditions.

[0084] In some embodiments, the configuration module is further configured to:

[0085] The drive waveforms corresponding to the laser off time t1 and the laser on time t0 are pre-stored; wherein, the pre-configured laser off time t1 and laser on time t0 are not equal.

[0086] In one specific embodiment, after the heating laser is started, the control module causes the heating laser to output a pre-stored driving waveform, specifically including:

[0087] (1) Initialize the timer interval of timer 0 to 10 milliseconds and the timer interval of timer 1 to 5 microseconds; turn off timer 0 and turn on timer 1; (the reason is: considering the response time, the maximum operating temperature of the laser gas sensor is increased from 55℃ to 65℃)

[0088] (2) In the timer interrupt of Timer 1, the waveform points are output using DAC. After power-on, the first waveform point is output. Each time the interrupt of Timer 1 is entered, one waveform point is output using DAC until the last waveform point is output. Timer 1 is turned off, Timer 0 is turned on, and the laser is turned off.

[0089] (3) Once the timer interrupt of timer 0 is entered, timer 1 is started, timer 0 is stopped, and then steps (2) and (3) are repeated.

[0090] Note: The timing interval of Timer 0 is determined based on the laser off time t1, and the timing interval of Timer 1 is determined based on the laser on time t0 / N, where N is the preset total number of waveform points.

[0091] In some embodiments, the control system of the heated laser further includes an operating temperature adjustment module, which is used to dynamically adjust the operating temperature of the heated laser according to the real-time target operating temperature parameter.

[0092] It should be noted that, depending on the application scenario of the laser gas sensor (such as a home application), the control system using a heated laser can effectively broaden the high-temperature operating environment of the laser gas sensor.

[0093] It should also be noted that the present invention can effectively reduce the cost of laser gas sensors (by eliminating the need for a reference detector and a reference gas chamber).

[0094] It should also be noted that the longer the laser is turned off and the shorter the laser is turned on, the less heat is generated inside the laser during the overall turn-off and turn-on time period. Therefore, this invention reduces the power consumption of the laser and the laser gas sensor as much as possible while ensuring that the location of the absorption pit detected by the detector meets the preset conditions, thereby improving the detection accuracy.

[0095] Example 3

[0096] Based on the above embodiments, this embodiment provides a specific implementation of a computer device, which includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus;

[0097] Memory, used to store computer programs;

[0098] The processor, when executing a program stored in the memory, implements the control method for the heating laser as described in Embodiment 1 or 2.

[0099] Based on the above embodiments, this embodiment also provides a readable storage medium storing instructions that, when executed by one or more processors, cause the processors to perform a control method for a heated laser as described in Embodiment 1 or 2:

[0100] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0101] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0102] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A control method for a heated laser, characterized in that, include: A laser operating temperature relationship model is pre-constructed, and the corresponding laser off-time t1 and laser on-time t0 are pre-configured; wherein, the laser operating temperature relationship model is expressed as Δ AD =a1×x-a2,Δ AD The temperature difference parameter corresponding to the heated laser is represented by x, the ambient temperature parameter reflected by the thermistor I is represented by a1, the first temperature coefficient is represented by a2, and the second temperature coefficient is represented by a2. Obtain the ambient temperature parameter x detected in real time by thermistor I. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the laser's operating temperature, the temperature difference parameter Δ corresponding to the heated laser is determined. i ; Based on temperature difference parameter Δ i and the external ambient temperature parameter x i Determine the real-time target operating temperature parameter of the heated laser; wherein, the real-time target operating temperature parameter = the ambient temperature parameter x i - The temperature difference parameter Δ i ; The heating laser is controlled based on the real-time target operating temperature parameters and the pre-configured laser off time t1 and laser on time t0 to ensure that the position of the absorption pit meets the preset conditions. The position of the absorption pit meeting the preset conditions means that when there is target gas, during the laser wavelength scanning process, the position of the absorption pit in the t0 segment waveform is in the middle of the t0 segment waveform.

2. The control method for a heated laser according to claim 1, characterized in that, The heating laser is controlled based on a pre-configured laser off-time t1 and laser on-time t0, including: After the heated laser is started, the heated laser outputs a pre-stored driving waveform; wherein the driving waveform refers to the driving waveform corresponding to the laser off time t1 and the laser on time t0, and the pre-configured laser off time t1 and laser on time t0 are not equal.

3. The control method for a heated laser according to claim 1 or 2, characterized in that, Controlling the heated laser based on the real-time target operating temperature parameters includes: The operating temperature of the heated laser is dynamically adjusted based on the real-time target operating temperature parameter.

4. A control system for a heating laser, characterized in that: It includes a configuration module, a real-time temperature difference determination module, a real-time target operating temperature determination module, and a control module, among which, The configuration module is used to pre-build a laser operating temperature relationship model and pre-configure the corresponding laser off-time t1 and laser on-time t0; wherein, the laser operating temperature relationship model is expressed as Δ AD =a1×x-a2,Δ AD The temperature difference parameter corresponding to the heated laser is represented by x, the ambient temperature parameter reflected by the thermistor I is represented by a1, the first temperature coefficient is represented by a2, and the second temperature coefficient is represented by a2. The real-time temperature difference determination module is used to acquire the ambient temperature parameter x detected in real time by the thermistor I. i According to the external ambient temperature parameter x i Based on the relationship model between the laser's operating temperature and the laser's operating temperature, the temperature difference parameter Δ corresponding to the heated laser is determined. i Wherein, the temperature difference parameter Δ i This refers to the difference between the ambient temperature parameter reflected by the thermistor I and the laser target operating temperature parameter; The real-time target operating temperature determination module is used to determine the temperature based on the temperature difference parameter Δ. i and the external ambient temperature parameter x i Determine the real-time target operating temperature parameter of the heated laser; wherein, the real-time target operating temperature parameter = the ambient temperature parameter x i - The temperature difference parameter Δ i ; The control module is used to control the heated laser based on the real-time target operating temperature parameter and the pre-configured laser off time t1 and laser on time t0, so that the position of the absorption pit meets the preset conditions. The position of the absorption pit meets the preset conditions, which means that when there is target gas, during the laser wavelength scanning process, the position of the absorption pit in the t0 segment waveform is in the middle of the t0 segment waveform.

5. The control system for the heated laser according to claim 4, characterized in that, The configuration module is also used for: The drive waveforms corresponding to the laser off time t1 and the laser on time t0 are pre-stored; wherein, the drive waveforms refer to the drive waveforms corresponding to the laser off time t1 and the laser on time t0, and the pre-configured laser off time t1 and laser on time t0 are not equal.

6. The control system for the heated laser according to claim 4 or 5, characterized in that, It also includes a working temperature adjustment module, which is used to dynamically adjust the working temperature of the heated laser according to the real-time target working temperature parameter.

7. A computer device, characterized in that: It includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; A processor, when executing a program stored in a memory, implements the control method for a heating laser as described in any one of claims 1 to 3.

8. A readable storage medium, characterized in that: It stores instructions that, when executed by one or more processors, cause the processors to perform the control method for the heated laser as described in any one of claims 1 to 3.

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