Solar cell and preparation method thereof

Abstract

The invention discloses a solar cell and a preparation method thereof. The preparation method comprises the following steps that a cell body is prepared, and the cell body comprises a perovskite layer; a top electrode and a bottom electrode are prepared on the front face and the back face of the cell body respectively, and the top electrode is a metal grid line; the metal grid lines on the front face of the cell body are sintered through local laser, and when the laser width of the local laser is larger than the grid line width of the metal grid lines, the photon energy of the laser is smaller than the perovskite band gap. By executing the steps, the preparation method can reduce thermal damage to the perovskite in a non-grid line area when the slurry is heated, so that the efficiency attenuation of the solar cell caused by the thermal damage is reduced.

Description

Technical Field

[0001] The invention relates to the field of photovoltaic cells, and in particular to a method for preparing a solar cell and a solar cell. Background Art

[0002] The efficiency of perovskite / crystalline silicon tandem cells has reached a maximum of 33.9%, far exceeding the 27.3% of the mainstream crystalline silicon single-junction cells in the market. Based on the industrial advantages of existing crystalline silicon cells, perovskite / crystalline silicon tandem cells can better iterate the industry. In addition, perovskite raw materials are abundant, preparation is simple and cost-effective, and it is considered to be the next generation of disruptive photovoltaic technology. The metal grid on the front of the tandem cell is the key technology for preparing efficient and stable tandem cells.

[0003] At present, the sintering process of the slurry for perovskite / crystalline silicon tandem cells usually adopts hot plate or annealing furnace heating and sintering. However, in the process of sintering the metal grid lines in the hot plate or annealing furnace, the perovskite material itself will also be heated to the corresponding temperature. The stability of perovskite decreases with the increase of temperature, but the electrical properties of the metal slurry increase with the increase of temperature. Therefore, in the prior art, the conventional hot plate or annealing furnace method of sintering the metal grid lines is difficult to balance the temperature requirements of the stability of perovskite and the electrical properties of the metal grid lines.

[0004] In order to solve the above problems existing in the prior art, the art urgently needs an improved solar cell preparation technology that can reduce thermal damage to perovskite in non-gridline areas when heating the slurry, thereby reducing solar cell efficiency attenuation caused by thermal damage. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a method for preparing a solar cell and a solar cell, which can reduce the thermal damage to the perovskite in the non-grid line area when heating the slurry, thereby reducing the solar cell efficiency attenuation caused by thermal damage.

[0007] Specifically, the method for preparing the above-mentioned solar cell provided in the first aspect of the present invention comprises the following steps: preparing a battery body, wherein the battery body includes a perovskite layer; preparing a top electrode and a bottom electrode on the front and back sides of the battery body respectively, wherein the top electrode is a metal grid line; and sintering the metal grid line on the front side of the battery body by local laser sintering, wherein when the laser width of the local laser is greater than the grid line width of the metal grid line, the photon energy of the laser is less than the perovskite band gap.

[0008] Furthermore, in some embodiments of the present invention, the step of sintering the metal grid lines on the front side of the battery body by localized laser further includes: when the laser width of the localized laser is less than or equal to the grid line width of the metal grid lines, the photon energy of the laser is less than or equal to or greater than the perovskite band gap.

[0009] Furthermore, in some embodiments of the present invention, the laser width is less than or equal to the sum of the gate line width and an upper limit value of the width.

[0010] Furthermore, in some embodiments of the present invention, the upper limit of the width is 100 um.

[0011] Furthermore, in some embodiments of the present invention, the step of preparing the battery body includes: preparing a crystalline silicon bottom cell; and preparing a perovskite top cell on the upper layer of the crystalline silicon bottom cell, wherein the perovskite top cell includes the perovskite layer, a hole transport layer, and an electron transport layer, and the hole transport layer and the electron transport layer are respectively located on the upper surface or the lower surface of the perovskite layer.

[0012] Furthermore, in some embodiments of the present invention, before the step of preparing a perovskite top cell on the upper layer of the crystalline silicon bottom cell, the preparation method also includes: preparing a composite layer between the crystalline silicon bottom cell and the perovskite top cell to electrically couple the crystalline silicon bottom cell and the perovskite top cell in series.

[0013] Furthermore, in some embodiments of the present invention, the method for preparing the perovskite layer includes any one or a combination of spin coating, blade coating, evaporation, printing, spraying, spray pyrolysis, and slit coating.

[0014] Furthermore, in some embodiments of the present invention, after the step of preparing a perovskite top cell on the upper layer of the crystalline silicon bottom cell, it also includes: preparing a cache layer on the upper layer of the electron transport layer or the hole transport layer between the perovskite layer and the top electrode in the perovskite top cell; and preparing a transparent electrode layer on the upper layer of the cache layer.

[0015] Furthermore, in some embodiments of the present invention, the method for preparing the metal grid line on the front side of the battery body includes but is not limited to any one of screen printing, inkjet printing, and laser transfer, and the method for preparing the metal electrode layer on the back side of the battery body includes but is not limited to any one of thermal evaporation, screen printing, inkjet printing, and laser transfer.

[0016] In addition, the above-mentioned solar cell provided according to the second aspect of the present invention includes: a solar cell prepared using the above-mentioned solar cell preparation method provided by the first aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A flow chart showing a method for preparing a solar cell according to some embodiments of the present invention; and

[0019] Figure 2 A schematic structural diagram of a solar cell provided according to some embodiments of the present invention is shown.

[0020] Reference numerals:

[0021] Steps S110 to S130;

[0022] 20 Solar cells;

[0023] 200 battery body;

[0024] 210 crystalline silicon bottom cell;

[0025] 211 monocrystalline silicon;

[0026] 212 Intrinsic amorphous silicon;

[0027] 213 p-type microcrystalline silicon;

[0028] 214 n-type microcrystalline silicon;

[0029] 215 composite layer;

[0030] 216 back electrode;

[0031] 220 Perovskite top cell;

[0032] 221 Perovskite layer;

[0033] 222 hole transport layer;

[0034] 223 Electron transport layer;

[0035] 231 metal grid line;

[0036] 232 metal electrode layer;

[0037] 240 caching layer; and

[0038] 250 transparent electrode layer. DETAILED DESCRIPTION

[0039] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0040] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0042] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0043] As mentioned above, during the process of sintering the metal grid lines on a hot plate or in an annealing furnace, the perovskite material itself will also be heated to a corresponding temperature. The stability of perovskite decreases with increasing temperature, but the electrical properties of the metal slurry increase with increasing temperature. Therefore, in the prior art, it is difficult to balance the temperature requirements of the stability of perovskite and the electrical properties of the metal grid lines using conventional hot plates or in annealing furnaces.

[0044] In order to solve the above problems existing in the prior art, the present invention provides a method for preparing a solar cell and a solar cell, which can reduce the thermal damage to the perovskite in the non-grid line area when heating the slurry, thereby reducing the solar cell efficiency attenuation caused by thermal damage.

[0045] In some non-limiting embodiments, the method for preparing the solar cell provided in the first aspect of the present invention may be used to prepare the solar cell provided in the second aspect of the present invention.

[0046] The structure of the above solar cell will be described below in conjunction with some examples of methods for preparing solar cells. Those skilled in the art will understand that the examples of methods for preparing these solar cells are only some non-limiting implementations provided by the present invention, and are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the solar cell. Similarly, the solar cell is only a non-limiting implementation provided by the present invention, and does not constitute a limitation on the implementation subject of each step in the methods for preparing these solar cells.

[0047] Please see Figure 1 , Figure 1 A flow chart of a method for preparing a solar cell provided according to some embodiments of the present invention is shown.

[0048] In some embodiments of the present invention, the method for preparing a solar cell may include the following step S110: preparing a cell body, wherein the cell body includes a perovskite layer.

[0049] Can be combined with reference Figure 2 , Figure 2 A schematic structural diagram of a solar cell provided according to some embodiments of the present invention is shown.

[0050] like Figure 2 As shown, in some embodiments of the present invention, the solar cell 20 may include a perovskite / crystalline silicon tandem cell. The working principle of the perovskite / crystalline silicon tandem solar cell is to use different band gaps to absorb different solar light spectra to improve the conversion efficiency of the cell. Therefore, the perovskite / crystalline silicon tandem solar cell can not only broaden the spectral response range of the cell, improve the efficiency of the solar cell, but also reduce the preparation cost.

[0051] Specifically, a crystalline silicon bottom cell 210 may be prepared first, and then a perovskite top cell 220 may be prepared on the upper layer of the crystalline silicon bottom cell 210, wherein the perovskite top cell 220 may include a perovskite layer 221, a hole transport layer 222, and an electron transport layer 223. The hole transport layer 222 and the electron transport layer 223 may be located on the upper surface or the lower surface of the perovskite layer 221, respectively.

[0052] like Figure 2 As shown, in some optional embodiments, the device structure of the perovskite top cell 220 can be a trans structure, the electron transport layer 223 is located on the upper surface of the perovskite layer 221, and the hole transport layer 222 is located on the lower surface of the perovskite layer 221. Light can be incident from one side of the crystalline silicon bottom cell 210, and is first received by the hole transport layer 222. The perovskite layer 221 absorbs light to generate electron-hole pairs, and the holes are collected by the hole transport layer 222 and transmitted to the crystalline silicon bottom cell 210, while the electrons pass through the electron transport layer 223 to reach the metal electrode layer 232, thereby forming a photocurrent.

[0053] In some other optional embodiments, the device structure of the perovskite top cell 220 may also be a formal structure, the electron transport layer 223 is located on the lower surface of the perovskite layer 221, and the hole transport layer 222 is located on the upper surface of the perovskite layer 221. Light can also be incident from one side of the crystalline silicon bottom cell 210, but passes through the electron transport layer 223 to reach the perovskite layer 221. After the perovskite layer 221 absorbs light to generate electron-hole pairs, the electrons are collected by the electron transport layer 223 and transmitted to the crystalline silicon bottom cell 210, and the holes pass through the hole transport layer 222 to reach the metal electrode layer 232, thereby forming a photocurrent.

[0054] Optionally, the crystalline silicon bottom cell 210 may include a P-type silicon substrate or an N-type silicon substrate, wherein the P-type silicon substrate may include but is not limited to a passivated emitter and rear contact cell (Passivated Emitter and Rear Cell, referred to as PERC cell), and the N-type silicon substrate may include but is not limited to a tunnel oxide passivated contact cell (TOPCon cell), an intrinsic thin film heterojunction cell (Heterojunction with Intrinsic Thin-film) cell (HJT cell), and an interdigitated back contact cell (IBC cell).

[0055] Continue as Figure 2As shown, the perovskite layer 221 in the perovskite top cell 220 is a light absorption layer for absorbing light and generating electron-hole pairs, and its structure is generally an organic / inorganic metal halide ABX3, wherein A can be a monovalent cation, including but not limited to cesium (Cs), rubidium (Rb), methylamine (CH3NH3), guanidine (CH2(NH2)2) One or a mixture of monovalent cations, B can be a divalent cation, including but not limited to lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), calcium (Ca) One or a mixture of divalent cations, and X can be a monovalent anion, including but not limited to iodine (I), bromine (Br), chlorine (Cl), fluorine (F), and a mixture of monovalent anions in thiocyanate ion (SCN).

[0056] The electron and hole pairs are rapidly separated inside the perovskite layer 221 and transported to the cathode and anode through the electron transport layer 223 (ETL) and the hole transport layer 222 (HTL). As the electrons and holes accumulate at the anode and cathode, a photo-generated electromotive force is generated between the two electrodes, which then generates a photocurrent after conduction.

[0057] The electron transport layer 223 and the hole transport layer 222 are in good contact with the perovskite layer 221. The electron transport layer 223 reduces the potential barrier of electrons in the transport process and prevents holes from being transported to the cathode while completing the electron transport. The material of the electron transport layer 223 may include: fullerene (C 60 ), titanium dioxide (TiO2), zinc oxide (ZnO), tin dioxide (SnO2), etc. The hole transport layer 222 is used to reduce the potential barrier in the hole transport process, completing the hole transport while preventing the electrons from moving to the anode. The material of the hole transport layer 222 may include nickel oxide (NiO), etc.

[0058] In this embodiment, in the wide spectrum of solar energy, the crystalline silicon solar cell can effectively utilize the photon energy in the near-infrared region, but cannot efficiently utilize the photon energy in the visible light region. About 30% of the visible light energy will be wasted due to thermal relaxation loss. Therefore, according to the principle of stacked solar cells, a wide-bandgap perovskite top cell 220 that can efficiently utilize visible light is directly prepared on the crystalline silicon bottom cell 210, thereby maximizing the conversion of light energy into electrical energy, greatly improving the utilization rate of the solar spectrum, the performance and stability of the cell.

[0059] The thickness of the perovskite layer 221 may range from 10 nm to 100 μm, and the band gap thereof may range from 0.9 eV to 3.0 eV. In addition, the preparation method of the perovskite layer 221 may include but is not limited to any one or more combinations of spin coating, blade coating, evaporation, printing, spray coating, spray pyrolysis, and slit coating.

[0060] Furthermore, if Figure 2 As shown, before the step of preparing the perovskite top cell 220 on the upper layer of the crystalline silicon bottom cell 210, the step may also be included: preparing a composite layer 215 between the crystalline silicon bottom cell 210 and the perovskite top cell 220, for electrically coupling the crystalline silicon bottom cell 210 and the perovskite top cell 220 in series, thereby greatly reducing thermal relaxation losses, achieving efficient combined utilization of the solar spectrum and superposition of open circuit voltages, and further improving photoelectric conversion efficiency.

[0061] Optionally, a transparent conductive layer or an electron tunneling junction may be selected for the composite layer 215. For example, the transparent conductive layer may be selected from indium tin oxide (ITO).

[0062] like Figure 2 As shown, after the step of preparing the perovskite top cell 220 on the upper layer of the crystalline silicon bottom cell 210, it may also include: preparing a cache layer 240 (for example, tin dioxide) on the upper layer of the electron transport layer 223 or the hole transport layer 222 between the perovskite layer 221 and the top electrode in the perovskite top cell 220, and preparing a transparent electrode layer 250 on the upper layer of the cache layer 240. By depositing the cache layer 240, the sputtering damage to the lower perovskite layer 221 can be reduced during the preparation of the subsequent transparent electrode layer 250.

[0063] Since there are many optical losses in the photoelectric conversion process of the solar cell 20, the efficiency of the solar cell is greatly limited. In order to improve the utilization rate of solar photons, a transparent electrode layer 250 (for example, indium zinc oxide) can be used as a window electrode on the upper layer of the perovskite top cell 220 to receive light and improve the cell conversion efficiency.

[0064] After preparing the battery body 200, please continue to return to Figure 1 The method for preparing the solar cell provided by the present invention may further include step S120: preparing a top electrode and a bottom electrode on the front and back of the cell body respectively, wherein the top electrode is a metal grid line.

[0065] like Figure 2As shown, the metal grid line 231 as the top electrode can be prepared on the front side of the battery body 200 by any method including but not limited to screen printing, inkjet printing, and laser transfer. For example, the metal grid line 231 can be formed by screen printing a low-temperature silver paste and then sintering. The metal electrode layer 232 can be prepared as the bottom electrode on the back side of the battery body 200 by any method including but not limited to thermal evaporation, screen printing, inkjet printing, and laser transfer. Further, the metal grid line 231 and the metal electrode layer 232 can be selected from one of silver, copper, aluminum, silver-coated copper, and silver-coated aluminum.

[0066] Please continue to return Figure 1 The method for preparing the solar cell provided by the present invention may further include step S130: sintering the metal grid lines on the front side of the cell body by local laser sintering, wherein when the laser width of the local laser is greater than the grid line width of the metal grid lines, the photon energy of the laser is less than the perovskite band gap.

[0067] Specifically, when the laser width of the local laser is greater than the grid width of the metal grid line 231, the laser photon energy is controlled to be less than the perovskite band gap, so that the perovskite top cell 220 can be guaranteed not to be damaged while sintering the metal grid line 231. When the laser width of the local laser is less than or equal to the grid width of the metal grid line 231, the laser photon energy can be less than, equal to, or greater than the perovskite band gap, because at this time, any laser can be absorbed by the metal grid line 231 but not by the perovskite, so the perovskite top cell 220 will not be damaged during the laser sintering of the metal grid line 231.

[0068] Further, in some preferred embodiments, the laser width of the local laser can be less than or equal to the sum of the grid line width and the upper limit of the width, so that the laser width range can be widened while ensuring local sintering. Optionally, the upper limit of the width can be 100um, that is, the laser width can be less than or equal to the grid line width plus 100um.

[0069] The duration of local laser can be controlled within 1ms to 1min, and the laser power is not limited.

[0070] In order to better introduce a solar cell 20 and a preparation method thereof provided by the present invention, a specific embodiment will be described in detail below.

[0071] like Figure 2As shown, N-type single crystal silicon 211 (c-Si) with a resistivity of 2Ω.cm can be selected as the substrate light absorption region. The thickness of the single crystal silicon 211 can be 300um. Since there are many defects on the surface of the single crystal silicon 211, the plasma enhanced chemical vapor deposition (PECVD) technology can be used to prepare intrinsic amorphous silicon 212 (ia-Si) with a thickness of 5nm on the front and back of the single crystal silicon 211 to better passivate the surface of the single crystal silicon 211.

[0072] Afterwards, PECVD technology can be continued to be used to prepare n-type microcrystalline silicon 214 (n-uc-Si) on the front side of the intrinsic amorphous silicon 212 (ia-Si), and p-type microcrystalline silicon 213 (p-uc-Si) can be prepared on the back side of the intrinsic amorphous silicon 212 as a current selective layer.

[0073] Furthermore, in order to connect the crystalline silicon bottom cell 210 and the perovskite top cell 220, p-type microcrystalline silicon 213 (p-uc-Si) can be further deposited on the upper layer of n-type microcrystalline silicon 214 (n-uc-Si) as a tunneling layer to improve the filling factor of the cell.

[0074] Afterwards, magnetron sputtering can be used to prepare 80nm of indium tin oxide (ITO) as the back electrode 216 on the surface of the p-type microcrystalline silicon 213 (p-uc-Si) on the back. On the surface of the p-type microcrystalline silicon 213 (p-uc-Si) on the front, 20nm of indium tin oxide (ITO) can be prepared as the composite layer 215. In this embodiment, the back side of the battery body 120 must include a back electrode 216 (indium tin oxide) or a similar electrode. If it is removed, current collection cannot be achieved, and if the composite layer 215 (indium tin oxide) is removed, the battery fill factor will decrease.

[0075] Afterwards, a 20 nm nickel oxide (NiO) can be prepared on the upper layer of the composite layer 215 (indium tin oxide) by magnetron sputtering as a hole transport layer 222 to increase the hole transport rate in the device. Perovskite is prepared by slit coating as a perovskite layer 221 (Perovskite), which is used to effectively convert the light energy absorbed in the solar cell 20 into electrical energy. The thickness of the perovskite layer 221 can be 1000 nm. In addition, a carbon 60 (C 60) layer with a thickness of 30 nm can be thermally evaporated. 60 ) is provided as an electron transport layer 223 above the perovskite layer 221.

[0076] Further, preferably, above the electron transport layer 223, 20nm of tin dioxide (SnO2) can be prepared by atomic layer deposition (ALD) technology as a cache layer 240 to reduce the sputtering damage to the underlying perovskite layer 221 during the preparation of the subsequent transparent electrode layer 250. Above the cache layer 240, 100nm of indium zinc oxide (IZO) can be prepared by magnetron sputtering as a transparent electrode layer 250. On the upper surface of the transparent electrode layer 250, a front metal grid line 231, such as a silver grid line, can be screen-printed. A back metal electrode layer 232, such as a silver electrode layer, can be prepared on the back of the back electrode 216 by thermal evaporation.

[0077] Finally, local laser sintering can be used to sinter the metal grid lines 231 on the front of the cell body 200. While ensuring the temperature required for sintering the metal grid lines 231 with low contact resistance and line resistance, the temperature of the perovskite region outside the metal grid lines 231 can be reduced to improve the performance of the solar cell 20 (perovskite / crystalline silicon stacked cell).

[0078] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0079] In summary, the present invention provides a method for preparing a solar cell and a solar cell, which can reduce thermal damage to perovskite in non-gridline areas when heating the slurry, thereby reducing solar cell efficiency attenuation caused by thermal damage.

[0080] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for preparing a solar cell, characterized in that: The following steps are involved: preparing a battery body, wherein the battery body includes a perovskite layer; A top electrode and a bottom electrode are respectively prepared on the front and back sides of the battery body, wherein the top electrode is a metal grid line; and The metal grid lines on the front side of the battery body are sintered by local laser sintering, wherein when the laser width of the local laser is greater than the grid line width of the metal grid lines, the photon energy of the laser is less than the perovskite band gap.

2. The preparation method according to claim 1, characterized in that The step of sintering the metal grid lines on the front side of the battery body by local laser sintering also includes: When the laser width of the local laser is less than or equal to the grid line width of the metal grid line, the photon energy of the laser is less than, equal to, or greater than the perovskite band gap.

3. The preparation method according to claim 1, characterized in that: The laser width is less than or equal to the sum of the grid line width and an upper limit value of the width.

4. The preparation method according to claim 3, characterized in that: The upper limit of the width is 100 um.

5. The preparation method according to claim 1, characterized in that: The steps of preparing the battery body include: preparing a crystalline silicon bottom cell; and A perovskite top cell is prepared on the upper layer of the crystalline silicon bottom cell, wherein the perovskite top cell includes the perovskite layer, a hole transport layer, and an electron transport layer, and the hole transport layer and the electron transport layer are respectively located on the upper surface or the lower surface of the perovskite layer.

6. The preparation method according to claim 5, characterized in that: Before the step of preparing a perovskite top cell on the upper layer of the crystalline silicon bottom cell, the preparation method further comprises: A composite layer is prepared between the crystalline silicon bottom cell and the perovskite top cell to electrically couple the crystalline silicon bottom cell and the perovskite top cell in series.

7. The preparation method according to claim 5, characterized in that: The preparation method of the perovskite layer includes any one or a combination of spin coating, blade coating, evaporation, printing, spraying, spray pyrolysis, and slit coating.

8. The preparation method according to claim 5, characterized in that: After the step of preparing a perovskite top cell on the upper layer of the crystalline silicon bottom cell, the method further comprises: Preparing a buffer layer on the upper layer of the electron transport layer or the hole transport layer between the perovskite layer and the top electrode in the perovskite top cell; and A transparent electrode layer is prepared on the upper layer of the cache layer.

9. The preparation method according to claim 1, characterized in that: The preparation method of the metal grid line on the front side of the battery body includes but is not limited to any one of screen printing, inkjet printing, and laser transfer, and the preparation method of the metal electrode layer on the back side of the battery body includes but is not limited to any one of thermal evaporation, screen printing, inkjet printing, and laser transfer.

10. A solar cell, characterized in that: include: A solar cell manufactured using the method for manufacturing a solar cell according to any one of claims 1 to 9.

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