Vertical Hall device and manufacturing method thereof

Abstract

The invention discloses a vertical Hall device and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the problems of low sensitivity and high offset voltage of a vertical Hall sensor in the prior art. The device comprises a substrate and an n-well region formed by performing N-type doping on the substrate, a plurality of groove structures are etched in the n-well region, and a plurality of N-type heavily doped contacts are formed; the plurality of contacts comprise electrode contacts and induction contacts; the electrode contact and the sensing contact are located on different planes. Through a grooving mode, an electrode contact is arranged in the device, an induction contact is still located on the surface of the device, multiple contacts are located on different planes, and due to the existence of a groove structure, carriers cannot flow on the surface of the device, so that the motion path of the carriers is changed, the short-circuit effect on the surface of the device is reduced, and the sensitivity of the device is improved; and compared with a P-type doped structure, the depth and the width are more easily and accurately controlled, and accurate control is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a vertical Hall device and a manufacturing method thereof. Background Art

[0002] The Hall sensor is a magnetic sensor based on the Hall effect. A magnetic sensor is an electronic component that can convert various magnetic signals such as magnetic field strength, magnetic field direction, magnetic flux, etc. into electrical signals. With the development of the economy, the scale of magnetic sensors is also increasing. Among many magnetic sensors, the Hall sensor occupies more than half of the market share of the magnetic sensor market due to its advantages such as small size, long life, compatibility with multiple processes, low cost, contactless sensing, no influence from dust and stains, and strong anti-interference ability. These advantages make Hall sensors widely used in various fields such as the automotive industry, household appliances, office supplies, health care, and aerospace.

[0003] As the market scale continues to expand, sensor products continue to enrich, and Hall sensors that can only detect magnetic fields in a single direction are gradually unable to meet market demand. At present, an important research object is an integrated Hall sensor that can detect magnetic fields in three-dimensional directions. An important research direction of three-dimensional integrated Hall sensors is to make horizontal Hall sensors and vertical Hall sensors on the same epitaxial structure. Horizontal Hall sensors can detect magnetic fields in a direction perpendicular to the device surface, and vertical Hall sensors can detect magnetic fields in a direction parallel to the device surface. Through the cooperation of the two, the detection of three-dimensional magnetic fields can be achieved. Vertical Hall sensors are an important component of three-dimensional Hall sensors, but compared with horizontal Hall sensors, vertical Hall sensors have low sensitivity and high offset voltage due to their own electrical asymmetry, which seriously limits the performance of this three-dimensional integrated Hall sensor.

[0004] Therefore, there is an urgent need to provide a more reliable vertical Hall device and a manufacturing method thereof. Summary of the invention

[0005] The object of the present invention is to provide a vertical Hall device and a manufacturing method thereof, so as to solve the problems of low sensitivity and high offset voltage of the vertical Hall sensor in the prior art.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] In a first aspect, the present invention provides a vertical Hall device, comprising:

[0008] substrate;

[0009] The substrate is N-type doped to form an n-well region;

[0010] A plurality of groove structures are etched in the n-well region to form a plurality of N-type heavily doped contacts; the plurality of contacts include electrode contacts and sensing contacts; the electrode contacts and the sensing contacts are located in different planes.

[0011] Optionally, the electrode contact is arranged inside the vertical Hall device, and the sensing contact is located on the surface of the vertical Hall device, so that carriers tend to move toward the inside of the vertical Hall device.

[0012] Optionally, when the vertical Hall device is a five-contact vertical Hall device, five contacts of the vertical Hall device are formed by five N-type heavily doped regions.

[0013] Optionally, the five contacts include three electrode contacts and two sensing contacts;

[0014] The electrode contacts include a first electrode contact, a second electrode contact and a third electrode contact; the first electrode contact and the second electrode contact are connected to a high level, and the third electrode contact is connected to a zero potential;

[0015] The two sensing contacts are used to measure the Hall voltage.

[0016] Optionally, the number of the trench structures etched in the n-well region is equal to the number of the electrode contacts.

[0017] Optionally, the depth of the groove structure is controlled to 0.1 micrometer.

[0018] Optionally, the substrate is a P-type substrate, and an insulating layer is deposited on the surface of the vertical Hall device.

[0019] Optionally, contact holes are provided in the insulating layer, and the contact holes correspond one-to-one to the multiple contacts.

[0020] Compared with the prior art, the vertical Hall device provided by the present invention comprises: a substrate; N-type doping is performed on the substrate to form an n-well region; a plurality of groove structures are etched in the n-well region to form a plurality of contacts with heavy N-type doping; the plurality of contacts include electrode contacts and inductive contacts; the electrode contacts and the inductive contacts are located in different planes. The electrode contacts are arranged inside the device by means of grooves, at which time the inductive contacts are still on the surface of the device, and the plurality of contacts are located in different planes. Due to the existence of the groove structure, the carriers cannot flow on the surface of the device, thereby changing the movement path of the carriers, reducing the short-circuit effect on the surface of the device, improving the sensitivity of the device, and reducing the offset voltage of the device. Compared with the P-type doping structure, the groove structure is easier to accurately control the depth and width, thereby achieving precise control.

[0021] In a second aspect, the present invention provides a method for manufacturing a vertical Hall device, the method being used to manufacture the vertical Hall device provided in the first aspect, the method comprising:

[0022] Performing N-type doping on the substrate to form an n-well region;

[0023] A plurality of groove structures are etched in the n-well region to form a plurality of N-type heavily doped contacts; the plurality of contacts include electrode contacts and sensing contacts; the electrode contacts and the sensing contacts are located in different planes;

[0024] An insulating layer is deposited on the surface of the vertical Hall device; metal is deposited and the excess part is etched to obtain the vertical Hall device.

[0025] Optionally, after depositing an insulating layer on the surface of the vertical Hall device, the method further comprises:

[0026] For each contact, a corresponding contact hole window is etched in the insulating layer; wherein the electrode contact is arranged inside the vertical Hall device, and the inductive contact is located on the surface of the vertical Hall device, so that the carriers tend to move toward the inside of the vertical Hall device; when no magnetic field is applied, the carriers move between the electrode contacts; under the same magnetic field, the number of additional deflected carriers received by the inductive contact increases, and the Hall voltage increases.

[0027] The manufacturing method provided in the second aspect has the same technical effect as that produced by the vertical Hall device structure provided in the first aspect, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0029] Figure 1 It is a top view of the conventional optimized structure of adding P doping type between contacts in the prior art;

[0030] Figure 2 This is a cross-sectional view of a conventional optimized structure with P-doping between contacts in the prior art;

[0031] Figure 3 A schematic diagram of the top view of the vertical Hall device provided by the present invention;

[0032] Figure 4 A schematic cross-sectional structure diagram of a vertical Hall device provided by the present invention;

[0033] Figure 5 A schematic flow chart of a method for manufacturing a vertical Hall device provided by the present invention;

[0034] Figure 6-Figure 11 A schematic structural diagram of a vertical Hall device manufactured by a manufacturing method provided in an embodiment of the present application provided by the present invention.

[0035] Reference numerals:

[0036] 1-substrate, 2-n-well region, 3-first electrode contact, 4-second electrode contact, 5-third electrode contact, 6-first sensing contact, 7-second sensing contact, 8-P-type heavily doped region. DETAILED DESCRIPTION

[0037] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0038] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0039] In the present invention, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0040] In the prior art, in order to improve the problems of low sensitivity and high offset voltage of the five-contact vertical Hall device, the conventional technology reduces the short-circuit effect on the device surface by introducing P-type doping between the five N+ contacts. The top view of the conventional optimized structure with P-type doping between the contacts is shown in FIG. Figure 1As shown, the cross-section of the traditional optimized structure with P-type doping between contacts is as follows Figure 2 As shown, it includes a substrate 1, which is a P-type substrate; an n-well region 2; five ohmic contacts formed by N-type heavily doped regions: a first electrode contact 3, a second electrode contact 4, a third electrode contact 5, and a first sensing contact 6 and a second sensing contact 7 for measuring the Hall voltage are in the same plane; between the contacts is a P-type heavily doped region 8. In the prior art, the P-type doping is performed by diffusion during the device manufacturing process. Due to the characteristics of the doping process, the problem of uneven doping will be brought about. The depth and length of the P-type heavily doped region 8 are also difficult to accurately control. In addition, the width of the depletion layer generated at the junction of P and N in the traditional optimized structure will also change with the change of the applied bias voltage, which will further affect the device performance.

[0041] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a novel vertical Hall device, in which the electrode contact is arranged inside the device by means of grooves, at which time the sensing contact is still on the surface of the device, and the electrode contact and the sensing contact are staggered. Such an arrangement can change the movement path of the carriers, thereby reducing the short-circuit effect on the surface of the device, improving the sensitivity of the device, and reducing the offset voltage of the device. Moreover, such a design can avoid the influence of factors such as the inability to accurately control the introduced P-type doping area on the device performance.

[0042] Next, the solution provided by the embodiments of this specification is described in conjunction with the accompanying drawings:

[0043] The structural schematic diagram of the vertical Hall device provided by the present invention is as follows Figure 3 as well as Figure 4 As shown, Figure 3 This is a top view of a vertical Hall device. Figure 4 This is a cross-sectional view of a vertical Hall device. Figure 3-4 In the invention, the vertical Hall device comprises a substrate 1; N-type doping is performed on the substrate 1 to form an n-well region 2; a plurality of groove structures are etched in the n-well region 2 to form a plurality of contacts heavily doped with N-type; the plurality of contacts comprise electrode contacts (3, 4, 5) and inductive contacts (6, 7); the electrode contacts and the inductive contacts are located in different planes. The electrode contacts (3, 4, 5) are arranged inside the vertical Hall device, and the inductive contacts (6, 7) are located on the surface of the vertical Hall device, so that carriers tend to move inside the vertical Hall device.

[0044] The substrate may be a semiconductor substrate, such as a bulk silicon substrate, and the substrate may be doped, such as a P-type doped silicon substrate or an N-type doped silicon substrate.

[0045] The required well depth can be achieved by injecting impurities into the substrate and forming a highly doped well region (well) after annealing. The doping type of the substrate is different for different device types. For P-type semiconductor devices, the highly doped well region is an N-well, and the injected impurities are n-type impurity ions, such as phosphorus (P) ions. For N-type semiconductor devices, the highly doped well region is a p-well, and the injected impurities are p-type impurity ions, such as boron (B) ions.

[0046] Semiconductors can generally be divided into intrinsic semiconductors, N-type semiconductors and P-type semiconductors, which represent no impurity doping, doped with N-type impurities (P, As) and doped with P-type impurities (B, Ga), respectively. If a P-type region is diffused on an N-type substrate, it is called a P-well region; if an N-type region is diffused on a P-type substrate, it is called an N-well region, i.e., an n-well region.

[0047] The vertical Hall device provided by the present invention sets the electrode contact inside the device by means of groove engraving. At this time, the sensing contact is still on the surface of the device, and multiple contacts are located in different planes. Due to the existence of the groove structure, carriers cannot flow on the surface of the device, thereby changing the movement path of the carriers, reducing the short-circuit effect on the surface of the device, improving the sensitivity of the device, and reducing the offset voltage of the device. In addition, compared with the P-type doping structure, the groove structure is easier to accurately control the depth and width, thereby achieving precise control.

[0048] In practical applications, vertical Hall devices can be divided into three-contact type, four-contact type, five-contact type, six-contact type and multi-three-contact type according to the number of contacts. The technical solution provided by the present invention is suitable for all types of vertical Hall devices.

[0049] Among many vertical Hall devices, the five-contact vertical Hall device has a smaller initial offset than the four-contact and six-contact Hall devices, a higher sensitivity than the multi-three-structure vertical Hall device, and a simpler manufacturing method. In comprehensive comparison, the five-contact vertical Hall device has great application potential. Therefore, Figure 3 and Figure 4 The five-contact vertical Hall device is used as an example to illustrate:

[0050] Due to the short-circuit effect between the N+ contacts, a large number of carriers flow directly from the electrode contact to the sensing contact when no magnetic field is applied in the traditional five-contact vertical Hall device, and the magnitude of the Hall voltage is directly related to the difference in the number of additional carriers received by the two sensing contacts after the magnetic field is applied. Therefore, when the total number of carriers remains unchanged, the more carriers the sensing contact receives when no magnetic field is applied, the fewer additional carriers the sensing contact receives under the action of the magnetic field after the magnetic field is applied, the lower the Hall voltage and the lower the sensitivity.

[0051] The traditional optimized structure adds a P-type doping structure between the five N+ contacts, and reduces the short-circuit effect on the surface through the depletion layer generated between the P region and the N region, thereby improving the sensitivity of the device. However, due to the characteristics of the doping process, the introduction of the P-type doping region will bring about the problem of uneven doping. The depth and length of the P-type doping region are also difficult to accurately control, which will cause the offset voltage of the device to increase.

[0052] In view of these problems, the present invention takes a novel five-contact vertical Hall device as an example to illustrate:

[0053] like Figure 3 and Figure 4 As shown in , when the vertical Hall device is a five-contact vertical Hall device, five contacts of the vertical Hall device are formed by five N-type heavily doped regions. The five contacts include three electrode contacts and two sensing contacts; the multiple contacts are not in contact with each other, and there is a certain distance between adjacent contacts.

[0054] The electrode contacts in the five-contact vertical Hall device include a first electrode contact 3, a second electrode contact 4 and a third electrode contact 5; the first electrode contact 3 and the second electrode contact 4 are connected to a high level, and the third electrode contact 5 is connected to a zero potential; the two sensing contacts include a first sensing contact 6 and a second sensing contact 7, which are used to measure the Hall voltage.

[0055] Among them, when the process parameters allow, the longer the trench structure is set, the more beneficial it is to reduce the surface effect of the device and improve the sensitivity of the device.

[0056] In addition, the number of groove structures can be equal to the number of electrode contacts. For example, a five-contact vertical Hall device includes three electrode contacts. In this case, three groove structures can be provided. Of course, the number of groove structures can also be determined according to actual conditions, as long as the purpose of reducing the short-circuit effect on the surface of the Hall device can be achieved.

[0057] An insulating layer may be deposited on the surface of the vertical Hall device.

[0058] The insulating layer may be provided with contact holes, and the contact holes correspond one-to-one to the plurality of contacts.

[0059] By setting a groove structure between multiple contacts, the groove structure blocks the flow of carriers between contacts, effectively inhibiting the direct flow of carriers from the electrode contact to the detection contact. At this time, the carriers need to bypass the groove structure to flow between the contacts, that is, the carriers tend to move toward the inside of the Hall device, reducing the short-circuit effect between the contacts. The groove structure is used to increase the length of the carrier movement path, increase the number of carriers deflected under the same magnetic field, and then increase the Hall voltage obtained by detection, thereby improving the sensitivity of the Hall device and enhancing the magnetic field response capability of the Hall device.

[0060] The vertical Hall device realizes the conversion from magnetic signal to electrical signal based on the Hall effect. When contacts 3 and 4 are connected to high level and 5 is connected to zero potential, two currents of equal magnitude and opposite directions will be generated inside the device, flowing from N+ contacts 3 and 4 to N+ contact 5, such as Figure 4 As shown. When a magnetic field perpendicular to the plane is applied, the carriers are deflected at the upper and lower ends of the device under the action of the magnetic field, and a potential difference will be generated between the two inductive contacts. This difference is the Hall voltage. The size of the Hall voltage is directly related to the sensitivity of the device.

[0061] Due to the influence of factors such as the surface short-circuit effect, a large number of carriers in traditional five-contact vertical Hall devices flow directly from the electrode contact to the sensing contact without applying a magnetic field, resulting in a decrease in the number of effective carriers that can be deflected under the action of the magnetic field after the magnetic field is applied, which in turn affects the sensitivity of the device.

[0062] The novel five-contact vertical Hall device proposed by the present invention sets three electrode contacts inside the device, which causes the carriers to tend to move inside the device. When no magnetic field is applied, the carriers can move directly between the electrode contacts without being received by the inductive contacts. Therefore, under the same magnetic field, the number of additional deflected carriers that can be received by the inductive contacts increases, and the Hall voltage increases, thereby improving the sensitivity of the device. In addition, the introduction of the groove structure further drives the carriers to move inside the device, greatly reducing the short-circuit effect on the surface of the device, and further improving the performance of the device.

[0063] The novel vertical Hall device provided by the present invention removes the P-type doped region between contacts on the basis of the traditional optimized structure, and by setting the three electrode contacts deeper in the device, the movement path of the carriers is changed, so that the carriers tend to move toward the inside of the device. And because there is no P-type doped region between the contacts, the width of the depletion layer generated at the PN junction will also change with the change of the applied bias voltage, which naturally will not affect the performance of the vertical Hall device. In addition, due to the presence of the long groove, the carriers cannot flow on the surface of the device. Such a design also achieves the purpose of reducing the surface effect of the device and improving the sensitivity of the device, and compared with the P-type doped structure, the groove structure is easier to accurately control the depth and width. According to the typical groove process design, the depth can be controlled to a range of 0.1 microns to achieve precise control.

[0064] for Figure 3-4 The vertical Hall device in the present invention also provides a corresponding manufacturing method. Figure 5 To explain:

[0065] like Figure 5 As shown, the manufacturing method of the vertical Hall device provided by the present invention comprises the following steps:

[0066] Step 510: Perform N-type doping on the substrate to form an n-well region.

[0067] Semiconductors can generally be divided into intrinsic semiconductors, N-type semiconductors and P-type semiconductors, which represent no impurity doping, doped with N-type impurities (P, As) and doped with P-type impurities (B, Ga). If a P-type region is diffused on an N-type substrate, it is called a P-well region; if an N-type region is diffused on a P-type substrate, it is called an N-well region.

[0068] The B end of NMOS is p-well, and p-well and psub are of the same injection type. The resistance of the substrate is large, so generally a P-type substrate contact is made around the NMOS to improve the performance of the tube. In the double-well process, except for n-well, it is p-well.

[0069] Step 520: etching a plurality of trench structures in the n-well region to form a plurality of N-type heavily doped contacts; the plurality of contacts include electrode contacts and sensing contacts; the electrode contacts and the sensing contacts are located in different planes.

[0070] Figure 1 and Figure 2In the device, five ohmic contacts formed by heavily N-type doped regions: electrode contacts 3, 4, 5, and inductive contacts 6 and 7 for measuring the Hall voltage are all located on the same plane. In order to reduce the short-circuit effect on the device surface, P-type doping can only be introduced between the five N+ contacts, which will bring about the problem of uneven doping. The depth and length of the P-type doped region are also difficult to accurately control, and the width of the depletion layer generated at the junction of P and N will also change with the change of the applied bias voltage, which will further affect the device performance. In the manufacturing method of the vertical Hall device provided by the present invention, three electrode contacts are set inside the device using the groove technology, and groove structures are set on both sides of the contacts. The five contacts are staggered and the P-type doped regions between the contacts are removed.

[0071] Step 530: depositing an insulating layer on the surface of the vertical Hall device; depositing metal and etching excess parts to obtain a vertical Hall device.

[0072] After depositing an insulating layer on the surface of the vertical Hall device, the method may further include:

[0073] For each contact, a corresponding contact hole window is etched in the insulating layer; wherein the electrode contact is arranged inside the vertical Hall device, and the inductive contact is located on the surface of the vertical Hall device, so that the carriers tend to move toward the inside of the vertical Hall device; when no magnetic field is applied, the carriers move between the electrode contacts; under the same magnetic field, the number of additional deflected carriers received by the inductive contact increases, and the Hall voltage increases.

[0074] The vertical Hall device can be a vertical Hall sensor, but is not limited to a vertical Hall sensor. Taking the vertical Hall sensor as an example, the vertical Hall sensor is used to detect the magnetic field parallel to the plane where the chip is located. It is usually made of a deep n-well (abbreviated as dnw) in a CMOS integrated circuit, that is, ion implantation is directly performed on the semiconductor substrate. Limited by existing technical conditions, its sensitivity is often low. In order to improve the sensitivity of the device, commonly used methods include reducing the dnw width, using narrow contact holes, and increasing the dnw depth. However, these methods will reduce the sensitivity of the vertical Hall sensor. The manufacturing method provided by the present invention performs N-type doping on a P-type substrate to form an n-well; etches three corresponding grooves in the n-well; uses the etched grooves to form five staggered N-type heavily doped regions; deposits an insulating layer on the surface of the device; etches 5 contact hole windows, deposits metal and etches excess parts. This process method can set the three electrode contacts inside the device, so that the carriers tend to move into the device. In addition, the groove structure is made to further drive the carriers to move into the device, greatly reducing the short-circuit effect on the device surface and further improving the performance of the device.

[0075] As an optional implementation, Figure 6 As shown, N-type doping is performed on a P-type substrate to form an n-well structure.

[0076] As an optional implementation, Figure 7 As shown, three corresponding grooves are etched in the n-well.

[0077] As an optional implementation, Figure 8 As shown, five staggered N-type heavily doped regions are formed by using the etched grooves.

[0078] As an optional implementation, Fig. 9 As shown, an insulating layer is deposited on the surface of the device, and the insulating layer is SiO2.

[0079] As an optional implementation, Fig.10 As shown, five contact hole windows are etched.

[0080] As an optional implementation, Fig.11 As shown, metal is deposited and the excess portion is etched, and the deposited metal is Al.

[0081] In the solution provided by the present invention, a vertical Hall sensor structure is designed, which mainly includes a staggered distribution form of five contacts and a groove structure on both sides of the contact. The three electrode contacts are set inside the device using the groove technology, which changes the movement path of the carriers. By combining the staggered distribution of the five contacts with the design of the long groove, the short-circuit effect on the surface of the device is greatly improved under the joint action of the two designs, so that the number of carriers that can be deflected by the device under the action of the magnetic field is increased. Therefore, under the same intensity of the magnetic field, the Hall voltage will also increase, and the sensitivity of the device will be improved. And compared with the P-type doped structure, the groove process is easier to accurately control the depth and width. According to the typical groove process design, the depth can be controlled to a range of 0.1 microns, which can achieve precise control.

[0082] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0083] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the claims of the present invention and their equivalents.

Claims

1. A vertical Hall device, characterized in that: include: substrate; The substrate is N-type doped to form an n-well region; A plurality of groove structures are etched in the n-well region to form a plurality of N-type heavily doped contacts; the plurality of contacts include electrode contacts and sensing contacts; the electrode contacts and the sensing contacts are located in different planes.

2. The vertical Hall device according to claim 1, characterized in that: The electrode contact is arranged inside the vertical Hall device, and the induction contact is located on the surface of the vertical Hall device, so that the carriers tend to move toward the inside of the vertical Hall device.

3. The vertical Hall device according to claim 2, characterized in that: When the vertical Hall device is a five-contact vertical Hall device, five contacts of the vertical Hall device are formed by five N-type heavily doped regions.

4. The vertical Hall device according to claim 3, characterized in that: The five contacts include three electrode contacts and two sensing contacts; The electrode contacts include a first electrode contact, a second electrode contact and a third electrode contact; the first electrode contact and the second electrode contact are connected to a high level, and the third electrode contact is connected to a zero potential; The two sensing contacts are used to measure the Hall voltage.

5. The vertical Hall device according to claim 1, characterized in that: The number of the trench structures etched in the n-well region is equal to the number of the electrode contacts.

6. The vertical Hall device according to claim 1, characterized in that: The depth of the groove structure is controlled to 0.1 micron.

7. The vertical Hall device according to claim 2, characterized in that: The substrate is a P-type substrate, and an insulating layer is deposited on the surface of the vertical Hall device.

8. The vertical Hall device according to claim 7, characterized in that: The insulating layer is provided with contact holes, and the contact holes correspond one-to-one to the plurality of contacts.

9. A method for manufacturing a vertical Hall device, the method being used to manufacture the vertical Hall device according to any one of claims 1 to 8, characterized in that: Methods include: Performing N-type doping on the substrate to form an n-well region; A plurality of groove structures are etched in the n-well region to form a plurality of N-type heavily doped contacts; the plurality of contacts include electrode contacts and sensing contacts; the electrode contacts and the sensing contacts are located in different planes; An insulating layer is deposited on the surface of the vertical Hall device; metal is deposited and the excess part is etched to obtain the vertical Hall device.

10. The method for manufacturing a vertical Hall device according to claim 9, characterized in that: After depositing an insulating layer on the surface of the vertical Hall device, the method further comprises: For each contact, a corresponding contact hole window is etched in the insulating layer; wherein the electrode contact is arranged inside the vertical Hall device, and the inductive contact is located on the surface of the vertical Hall device, so that the carriers tend to move toward the inside of the vertical Hall device; when no magnetic field is applied, the carriers move between the electrode contacts; under the same magnetic field, the number of additional deflected carriers received by the inductive contact increases, and the Hall voltage increases.

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