Tumor treatment transducer, preparation method thereof, tumor treatment electrode patch and tumor treatment system

Abstract

The invention provides a tumor treatment transducer and a preparation method thereof, a tumor treatment electrode patch and a tumor treatment system, and the tumor treatment transducer comprises a first conductive carrier which is provided with a first side close to the skin and a second side away from the skin; the dielectric layer is positioned on the second side of the first conductive carrier and is in electric contact with the first conductive carrier; wherein the first conductive carrier comprises a first flexible substrate layer and a first electrode layer which are attached to each other, the first flexible substrate layer is located on the second side of the first conductive carrier, and the first electrode layer is located on the second side of the first conductive carrier; a first groove is formed in the first flexible substrate layer, the first groove at most penetrates to the first electrode layer in the direction from the second side to the first side, and the dielectric layer is located in the first groove and attached to the first electrode layer. Moisture transmitted from the skin direction can be well blocked, the dielectric layer is prevented from being soaked by the moisture, and then the problem that the dielectric layer is broken down due to moisture is solved.

Description

Technical Field

[0001] The present application relates to the technical field of tumor treatment, and specifically to a tumor treatment transducer and a preparation method thereof, a tumor treatment electrode patch, and a tumor treatment system. Background Art

[0002] Currently, there are many methods for treating tumors. Common treatments include surgical operation, radiotherapy, chemotherapy, molecular targeted therapy, etc. However, common treatments all have corresponding disadvantages. For example, radiotherapy or chemotherapy will kill normal cells. For another example, although surgical operation can cure early tumors, some patients may be easily injured due to surgical contraindications.

[0003] The use of alternating electric fields to treat tumors is one of the most cutting-edge tumor treatment methods currently under development. Tumor electric field therapy applies an alternating electric field to the treatment site of the human body, thereby affecting the aggregation of tumor microtubule proteins and preventing spindle formation, thereby achieving the purpose of inhibiting the mitotic process of cancer cells and inducing apoptosis of cancer cells. Specifically, the existing tumor electric field therapy mainly attaches electrode patches to the opposite sides of the patient's treatment site, such as the two sides of the patient's waist, and blocks the current from flowing directly to the patient through the tumor treatment transducer in the electrode patch. At the same time, the electrode plates of the tumor treatment transducers on the opposite sides apply an alternating electric field to the patient's treatment site, thereby achieving the purpose of tumor treatment.

[0004] However, the tumor treatment transducer may be punctured during use, and even if the dielectric material is replaced, it is difficult to solve the problem of puncture. The inventor has found through research that the sweat of the patient's treatment area or the water vapor in the hydrogel that fits the human skin can easily penetrate into the tumor treatment transducer, causing the dielectric material to be soaked by the water from the human body, which makes the tumor treatment transducer prone to puncture. Summary of the invention

[0005] The present application provides a tumor treatment transducer and a preparation method thereof, a tumor treatment electrode patch, and a tumor treatment system, aiming to solve the current technical problem that the tumor treatment transducer is easily immersed in water and causes the tumor treatment transducer to be broken down.

[0006] In a first aspect, the present application provides a tumor treatment transducer, comprising:

[0007] a first conductive carrier having a first side close to the skin and a second side away from the skin;

[0008] a dielectric layer, the dielectric layer being located on the second side of the first conductive carrier and being in electrical contact with the first conductive carrier;

[0009] The first conductive carrier comprises a first flexible substrate layer and a first electrode layer attached to each other, the first flexible substrate layer is located on the second side of the first conductive carrier, and the first electrode layer is located on the first side of the first conductive carrier;

[0010] The first flexible substrate layer is formed with a first groove, the first groove penetrates at most to the first electrode layer along the direction from the second side toward the first side, and the dielectric layer is located in the first groove.

[0011] In some embodiments, when the tumor treatment transducer is bent, the side surface of the dielectric layer may be separated from the side wall surface of the first groove.

[0012] In some embodiments, the tumor treatment transducer further includes a covering layer, which covers the first groove and is bonded to a side of the first flexible substrate layer facing away from the first electrode layer, and the covering layer is directly or indirectly pressed against the dielectric layer.

[0013] In some embodiments, the cover layer includes an abutment portion and an adhesive portion surrounding the abutment portion;

[0014] The pressing portion is opposite to the first groove, and the bonding portion is bonded to a surface of the first flexible substrate layer that is away from the first electrode layer.

[0015] In some embodiments, the abutting portion protrudes toward the first electrode layer, and the abutting portion abuts against the dielectric layer indirectly or directly.

[0016] In some embodiments, the depth of the first groove is greater than the thickness of the dielectric layer, and the abutting portion is at least partially embedded in the first groove.

[0017] In some embodiments, the tumor treatment transducer further comprises a second conductive carrier;

[0018] The second conductive carrier comprises a second flexible substrate layer and a close-fitting conductive layer which are attached to each other, wherein the close-fitting conductive layer is located on a side of the second flexible substrate layer adjacent to the first flexible substrate layer;

[0019] The second conductive carrier covers the first groove, the first flexible substrate layer is bonded to the second flexible substrate layer, the conductive layer is pressed against the first groove, and the conductive layer is pressed against the dielectric layer indirectly or directly.

[0020] In some embodiments, the second flexible substrate layer is curved in an arcuate shape in a direction away from the first flexible substrate layer.

[0021] In some embodiments, the thickness of the dielectric layer is less than the depth of the first groove, and the conductive layer is at least partially embedded in the first groove.

[0022] In some embodiments, the thickness of the dielectric layer, the depth of the first groove, and the thickness of the abutting conductive layer satisfy the following relationship:

[0023] H2>H-H1

[0024] Wherein, H is the depth of the first groove, H1 is the thickness of the dielectric layer, and H2 is the thickness of the abutting conductive layer.

[0025] In some embodiments, the first flexible substrate layer has a first edge region surrounding the first groove;

[0026] A second edge region is provided surrounding and pressing against the conductive layer, and the first edge region is bonded to the second edge region.

[0027] In some embodiments, an adhesive layer is filled between the first edge region and the second edge region;

[0028] The thickness of the bonding layer gradually decreases along the circumferential direction away from the first groove.

[0029] In some embodiments, the tumor treatment transducer further includes a defect repair layer, the defect repair layer being bonded to a side of the dielectric layer facing away from the first electrode layer;

[0030] A side of the dielectric layer facing the defect repairing layer has microscopic pits, and the defect repairing layer is tightly combined with the dielectric layer to fill the microscopic pits.

[0031] In some embodiments, a surface of the dielectric layer facing away from the first electrode layer has a first roughness, and a surface of the defect repairing layer facing away from the dielectric layer has a second roughness;

[0032] The second roughness is less than or equal to the first roughness.

[0033] In some embodiments, the tumor treatment transducer further includes a second electrode layer, the second electrode layer being in contact with the defect repairing layer.

[0034] In some embodiments, the tumor treatment transducer further comprises a flexible conductive layer;

[0035] One side of the flexible conductive layer is bonded to the defect repairing layer, and the other side is bonded to the second electrode layer.

[0036] In some embodiments, at least a portion of the defect repair layer and the flexible conductive layer are located in the first groove;

[0037] The second electrode layer covers the first groove, and the edge area of ​​the second electrode layer is in contact with the first flexible substrate layer.

[0038] In some embodiments, the tumor treatment transducer further includes an insulating layer disposed between the dielectric layer and the first electrode layer.

[0039] In some embodiments, the insulating layer has a dielectric strength greater than that of the dielectric layer.

[0040] In some embodiments, a conductive hydrogel is further provided on the side of the first electrode layer facing the skin.

[0041] In some embodiments, the first groove is located at the center of the first flexible substrate layer.

[0042] In some embodiments, the thickness of the dielectric layer is 1 um to 10 um.

[0043] In some embodiments, the thickness of the dielectric layer is 2 um to 8 um.

[0044] In some embodiments, the area of ​​the first groove is 1 cm 2 Up to 1200cm 2 .

[0045] In some embodiments, the area of ​​the first groove is 3 cm 2 Up to 100cm 2 .

[0046] In some embodiments, a distance between an edge of the first flexible substrate layer and the first groove is 0.2 mm to 10 mm.

[0047] In some embodiments, the first groove has a depth of 0.005 mm to 2 mm.

[0048] In a second aspect, the present application provides a method for preparing a tumor treatment transducer, comprising:

[0049] A first conductive carrier is provided, wherein the first conductive carrier has a first side close to the skin and a second side away from the skin, and the first conductive carrier comprises a first flexible substrate layer and a first electrode layer attached to each other, wherein the first flexible substrate layer is located on the second side of the first conductive carrier, and the first electrode layer is located on the first side of the first conductive carrier;

[0050] forming a first groove on the first flexible substrate layer, wherein the first groove penetrates at most to the first electrode layer along the direction from the second side toward the first side;

[0051] A dielectric layer is formed in the first groove, and the dielectric layer is bonded to the first electrode layer.

[0052] In a third aspect, the present application provides a tumor treatment electrode patch, comprising the tumor treatment transducer as described in the first aspect.

[0053] In a fourth aspect, the present application provides a tumor treatment system, comprising the tumor treatment electrode patch as described in the third aspect.

[0054] The present application sets the first side of the first conductive carrier facing the skin as the first electrode layer, and the second side of the first conductive carrier as the first flexible substrate layer, and opens a first groove on the first electrode layer. Since the first groove penetrates from the second side to the first side to the first electrode layer, the dielectric layer can be filled in the first groove and fit with the first electrode layer to achieve electrical contact, so that the side of the dielectric layer facing the skin is protected by the first electrode layer, and the side of the dielectric layer is protected by the first flexible substrate layer, so as to better block moisture transmitted from the skin direction, prevent the dielectric layer from being infiltrated by moisture, and thus solve the problem of dielectric layer being broken down due to moisture. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0056] Figure 1 is a structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application;

[0057] Figure 2 is a structural schematic diagram of a first conductive carrier provided in an embodiment of the present application;

[0058] Figure 3 is another structural schematic diagram of the first conductive carrier provided in an embodiment of the present application;

[0059] Figure 4 is a structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application when bent;

[0060] Figure 5 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application;

[0061] Figure 6 is another structural schematic diagram of the tumor treatment transducer provided in the embodiment of the present application when it is bent;

[0062] Figure 7 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application;

[0063] Figure 8 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application;

[0064] Fig. 9 Another structural schematic diagram of the tumor treatment transducer in the embodiment of the present application is shown;

[0065] Fig.10 A schematic structural diagram of a side of the first conductive carrier facing the second conductive carrier in an embodiment of the present application is shown;

[0066] Fig.11 A schematic structural diagram of a side of the second conductive carrier facing the first conductive carrier in an embodiment of the present application is shown;

[0067] Fig.12 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application;

[0068] Fig.13 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application;

[0069] Fig.14 is another structural schematic diagram of the tumor treatment transducer provided in the embodiment of the present application when it is bent;

[0070] Fig.15 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application; Fig.16 is another structural schematic diagram of a tumor treatment transducer provided in an embodiment of the present application; Fig.17 It is a schematic diagram of a process of preparing a tumor treatment transducer provided in an embodiment of the present application; Fig.18 It is another flow chart of the method for preparing a tumor treatment transducer provided in the embodiments of the present application.

[0071] Among them, 10 is a first conductive carrier, 11 is a first flexible substrate layer, 111 is a first groove, 112 is a first edge region, 12 is a first electrode layer, 20 is a dielectric layer, 21 is a microscopic pit, 30 is a covering layer, 31 is a pressing part, 32 is an adhesive part, 40 is a defect repairing layer, 41 is a first defect repairing layer, 42 is a second defect repairing layer, 50 is a second electrode layer, 60 is a flexible conductive layer, 70 is an insulating layer, 80 is a conductive attachment layer, 90 is a second conductive carrier, 91 is a second flexible substrate layer, 911 is a second edge region, 92 is a pressing conductive layer, and 93 is an adhesive layer. DETAILED DESCRIPTION

[0072] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0073] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0074] In this application, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described in this application as "exemplary" is not necessarily to be construed as being preferred or advantageous over other embodiments. The following description is given to enable any person skilled in the art to implement and use the invention. In the following description, details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the invention can be implemented without using these specific details. In other instances, well-known structures and processes are not elaborated in detail to avoid obscuring the description of the invention with unnecessary details. Therefore, the present invention is not intended to be limited to the embodiments shown, but is consistent with the widest scope consistent with the principles and features disclosed in this application.

[0075] The embodiments of the present application provide a tumor treatment transducer and a preparation method thereof, a tumor treatment electrode patch, and a tumor treatment system, which are described in detail below.

[0076] First, see Figure 1 , Figure 1 A schematic diagram of the structure of a tumor treatment transducer in an embodiment of the present application is shown, wherein the tumor treatment transducer comprises:

[0077] A first conductive carrier 10, the first conductive carrier 10 having a first side close to the skin and a second side away from the skin;

[0078] a dielectric layer 20 , the dielectric layer 20 being located on the second side of the first conductive carrier 10 and being in electrical contact with the first conductive carrier 10 ;

[0079] The first conductive carrier 10 includes a first flexible substrate layer 11 and a first electrode layer 12 attached to each other, the first flexible substrate layer 11 is located on the second side of the first conductive carrier 10, and the first electrode layer 12 is located on the first side of the first conductive carrier 10;

[0080] The first flexible substrate layer 11 is formed with a first groove 111 . The first groove 111 penetrates at most to the first electrode layer 12 along the direction from the second side toward the first side. The dielectric layer 20 is located in the first groove 111 .

[0081] Specifically, the first flexible substrate layer 11 and the first electrode layer 12 of the first conductive carrier 10 are both flexible, so that the tumor treatment transducer can be bent and adapted to the human skin surface that is approximately a curved surface. Exemplarily, the first flexible substrate layer 11 of the first conductive carrier 10 can be one or more of polyimide, polyester film, silicone resin, polyvinyl chloride, polyethylene, polytetrafluoroethylene, chloroprene rubber or polyvinyl acetal, for example, the first flexible substrate layer 11 includes a polyimide material layer and a polyester film material layer that are bonded to each other; the first electrode layer 12 can be a thinner metal or a non-metal layer with flexibility, conductivity and waterproof properties, such as a metal layer such as a 0.1mm to 1mm thick metal copper foil or a metal silver foil, and another non-metal layer such as a transparent tin-doped indium oxide conductive film (Indium Tin Oxides, ITO) or a fluorine-doped tin oxide conductive film (F-doped Tin Oxide, FTO). In some embodiments of the present application, the first conductive carrier 10 may be a flexible circuit board with a flexible material such as polyimide, polyester film, silicone resin, polyvinyl chloride, polyethylene, polytetrafluoroethylene, chloroprene rubber or polyvinyl acetal as a substrate, so as to directly open the first groove 111 on the flexible substrate of the flexible circuit board.

[0082] A first groove 111 is formed on the first flexible substrate layer 11 and penetrates to the first electrode layer 12 at most, so as to prepare the dielectric layer 20 in the first groove 111. In some embodiments of the present application, Figure 1 As shown, the inner wall surface of the first groove 111 may be perpendicular to the first electrode layer 12. In some embodiments of the present application, see Figure 2 , Figure 2 1 shows a schematic diagram of the structure of the first conductive carrier 10 in an embodiment of the present application, wherein the inner wall surface of the first groove 111 can be arranged at an acute angle with the surface of the first electrode layer 12, so that the cross section of the first groove 111 is approximately trapezoidal. Figure 3 , Figure 3 A schematic structural diagram of the first conductive carrier 10 in an embodiment of the present application is shown, and the inner wall surface of the first groove 111 is arranged in a stepped state.

[0083] In some embodiments of the present application, Figure 1 As shown, the first groove 111 may penetrate to the first electrode layer 12, so that the dielectric layer 20 in the first groove 111 is directly in contact with and electrically connected to the first electrode layer 12. In some other embodiments of the present application, Figure 2 As shown, the first groove 111 may not penetrate to the first electrode layer 12, so that there is a portion of the first flexible substrate layer 11 between the dielectric layer 20 and the first electrode layer 12, and the portion of the first flexible substrate layer 11 can be used as an insulating layer, thereby enhancing the anti-breakdown performance of the tumor treatment transducer.

[0084] It can be understood that the inner wall surface of the first groove 111 can also be arranged in other shapes, such as a spherical surface or an ellipsoidal surface.

[0085] In some embodiments of the present application, the shape of the first groove 111 can be rectangular, circular, elliptical or a combination thereof. In some embodiments of the present application, illustratively, the first groove 111 can be formed by processes such as photolithography, etching or laser removal.

[0086] In some embodiments of the present application, the area of ​​the first groove 111 is 1 cm 2 Up to 1200cm 2 Preferably, the area of ​​the first groove is 3 cm 2 Up to 100cm 2 , to ensure that the dielectric layer 20 has a sufficiently large contact area, thereby ensuring the capacitance of the tumor treatment transducer.

[0087] In some embodiments of the present application, the distance between the edge of the first flexible substrate layer 11 and the first groove 111 is 0.2 mm to 10 mm. The distance between the edge of the first flexible substrate layer 11 and the first groove 111 meets this requirement, so that the first flexible substrate layer 11 has a sufficient edge area to bond the cover layer 30 or the second electrode layer 50.

[0088] In some embodiments of the present application, the depth of the first groove 111 is 0.005 mm to 2 mm. When the first flexible substrate layer 11 is flat and approximately cube-shaped, the thickness of the first flexible substrate layer 11 is 0.015 mm to 0.5 mm. The depth of the first groove 111 meets the size requirement, and the dielectric layer 20, the defect repair layer 40, etc. can be formed in the first groove, and a good coating and packaging effect is achieved, so that the transducer structure is more stable and has excellent sealing characteristics.

[0089] In some embodiments of the present application, only one first groove 111 may be provided on the first conductive carrier 10, so that a single tumor treatment transducer is prepared on the first conductive carrier 10. In some other embodiments of the present application, a plurality of first grooves 111 may be arranged in an array on the first conductive carrier 10, so as to facilitate the arrangement of a plurality of tumor treatment transducers in an array on the first conductive carrier 10. In some embodiments of the present application, for example, in an embodiment in which only one first groove 111 may be provided on the first conductive carrier 10, the first groove 111 is located at the center of the first flexible substrate layer 11, so as to facilitate the preparation of the dielectric layer 20 at the center of the first flexible substrate layer 11.

[0090] The dielectric layer 20 is made of a dielectric material and can prevent current from flowing through to prevent the current of the tumor treatment transducer from directly acting on the human body. In some embodiments of the present application, the dielectric layer 20 can be made of an organic material or an inorganic material, such as ceramic, glass, mica, polypropylene, polystyrene or polyethylene terephthalate.

[0091] Preferably, the material of the dielectric layer 20 may include one or more of poly(VDF-TrFE-CTFE)(poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)), poly(VDF-TrFE-CFE)(poly(vinylidene fluoride-trifluoroethylene-1-chlorofluoroethylene)), poly(VDF-TrFECFE-CTFE)(poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene-chlorofluoroethylene)), and poly(VDF-DB)(poly(vinylidene fluoride-diethylene glycol butyl ether)). Since the above materials have a higher dielectric constant, they help to increase the capacitance of the tumor treatment transducer when the thickness and area of ​​the dielectric layer 20 are certain, thereby better applying the tumor treatment alternating electric field to the patient's treatment site.

[0092] In some embodiments of the present application, the thickness of the dielectric layer 20 is 1um to 100um. In some embodiments of the present application, the thickness of the dielectric layer 20 is 1um to 10um. Preferably, the thickness of the dielectric layer 20 is 2um to 8um. The thickness of the dielectric layer 20 meets the above-mentioned size requirements, so that the tumor treatment transducer has a higher capacitance, and at the same time, it can also avoid the phenomenon of breakdown of the tumor treatment transducer due to the thin dielectric layer 20.

[0093] In some embodiments of the present application, the dielectric layer 20 can be formed in the first groove 111 by spin coating, scraping, atomization, casting or screen printing. In some other embodiments of the present application, the dielectric layer 20 is directly attached to the first groove 111 in the form of a finished film and contacts the first electrode layer 12.

[0094] In the embodiment of the present application, the present application sets the first side of the first conductive carrier 10 facing the skin as the first electrode layer 12, and the second side of the first conductive carrier 10 as the first flexible substrate layer 11, and opens a first groove 111 on the first electrode layer 12. Since the first groove 111 penetrates at most to the first electrode layer 12 along the direction from the second side toward the first side, the dielectric layer 20 can be filled in the first groove 111, so that the side of the dielectric layer 20 facing the skin is protected by the first electrode layer 12, and the side of the dielectric layer 20 is protected by the first flexible substrate layer 11, so that the moisture transmitted from the skin direction can be better blocked, and the dielectric layer 20 is prevented from being infiltrated by moisture, thereby solving the problem of the dielectric layer 20 being broken down due to moisture.

[0095] In some embodiments of the present application, see Figure 4 , Figure 4 A schematic diagram of the structure of the tumor treatment transducer when it is bent in an embodiment of the present application is shown. When the tumor treatment transducer is bent, the side surface of the dielectric layer 20 can be separated from the side wall surface of the first groove 111.

[0096] Specifically, when the electrode patch including the tumor treatment transducer is attached to the surface of human skin, since the surface of human skin is usually not a plane but a curved surface, the tumor treatment transducer will bend and deform along with the surface of human skin, which may cause cracks in the dielectric layer 20.

[0097] In the above embodiment, since the dielectric layer 20 is located in the first groove 111, when the tumor treatment transducer is bent, especially when the tumor treatment transducer is placed close to the protruding skin surface of the human body, so that the tumor treatment transducer as a whole is bent in an arch shape close to the skin surface of the human body, the side surface of the dielectric layer 20 is separated from the side wall surface of the first groove 111. At this time, the bending radius of the first flexible substrate layer 11 is greater than the bending radius of the dielectric layer 20, thereby reducing the bending degree of the dielectric layer 20, which is beneficial to improving the anti-cracking performance of the dielectric layer 20; at the same time, since the bending degree of the dielectric layer 20 is reduced, the dielectric layer 20 can be made thinner, which is beneficial to improving the capacitance of the tumor treatment transducer, so that the tumor treatment transducer can better couple the alternating electric field to the treatment part of the human body.

[0098] It should be noted that the bending radius of the dielectric layer 20 may refer to the radius corresponding to the arc made by the lowest points on both sides of the bending of the dielectric layer 20 and the vertex of the dielectric layer 20 away from the first electrode layer 12, and the bending radius of the first flexible substrate layer 11 may refer to the radius corresponding to the arc made by the lowest points on both sides of the bending of the first flexible substrate layer 11 and the vertex of the first flexible substrate layer 11 away from the first electrode layer 12.

[0099] It can be understood that the bending radius of the dielectric layer 20 can also refer to the radius corresponding to a certain curved surface of the dielectric layer 20, or it can also refer to the average value of the radii corresponding to multiple curved surfaces of the dielectric layer 20; the bending radius of the first flexible substrate layer 11 can also refer to the radius corresponding to a certain curved surface of the first flexible substrate layer 11, or it can also refer to the average value of the radii corresponding to multiple curved surfaces of the first flexible substrate layer 11.

[0100] In some embodiments of the present application, see Figure 5 as well as Figure 6 , Figure 5 A schematic diagram of the structure of a tumor treatment transducer in an embodiment of the present application is shown. Figure 6 Another structural schematic diagram of the tumor treatment transducer when bent in an embodiment of the present application is shown, wherein the tumor treatment transducer also includes a covering layer 30, the covering layer 30 covers the first groove 111 and is bonded to the side of the first flexible substrate layer 11 facing away from the first electrode layer 12, and the covering layer 30 is indirectly or directly pressed against the dielectric layer 20.

[0101] Specifically, the covering layer 30 covers the first groove 111 and the edge area of ​​the first flexible substrate layer 11. When the tumor treatment transducer is bent, the edge area where the first flexible substrate layer 11 is bonded to the covering layer 30 pulls the covering layer 30 to bend. Since the dielectric layer 20 will indirectly or directly press against the covering layer 30, the bending radius of the covering layer 30 will be greater than the bending radius of the dielectric layer 20, and the middle part of the covering layer 30 will also generate pressure close to the first electrode layer 12, so that the covering layer 30 is indirectly or directly pressed against the dielectric layer 20, ensuring the electrical connectivity between the dielectric layer 20 and the covering layer 30, avoiding the generation of interlayer gaps between the functional layers and thus causing air gap ionization.

[0102] It should be noted that the bending radius of the covering layer 30 may refer to the radius corresponding to the arc formed by the lowest point on both sides of the bending of the covering layer 30 and the vertex of the covering layer 30 away from the first electrode layer 12. It can be understood that the bending radius of the covering layer 30 may also refer to the radius corresponding to a certain arc surface of the covering layer 30, or may also refer to the average value of the radii corresponding to multiple arc surfaces of the covering layer 30.

[0103] In some embodiments of the present application, the covering layer 30 is conductive, so that the covering layer 30 and the first electrode layer 12 of the first conductive carrier 10 are respectively used as two electrodes of the tumor treatment transducer. Exemplarily, the material of the covering layer 30 can be one or a combination of Al, Ti, Au, Ag, Zn, Cu, Pt, Cr, Fe, Sn or Ni.

[0104] In some embodiments of the present application, see Figure 5 as well as Figure 6The cover layer 30 includes a pressing portion 31 and an adhesive portion 32 surrounding the pressing portion 31; the pressing portion 31 is opposite to the first groove 111, and the adhesive portion 32 is bonded to a side of the first flexible substrate layer 11 away from the first electrode layer 12. Specifically, the pressing portion 31 of the cover layer 30 can be pressed against the dielectric layer 20 indirectly or directly, thereby ensuring the interface electrical connectivity between the functional layers of the tumor treatment transducer, and the annular adhesive portion 32 can be bonded to the annular edge area of ​​the first flexible substrate layer 11 through glue to ensure the bonding firmness between the cover layer 30 and the first flexible substrate layer 11.

[0105] In some embodiments of the present application, see Figure 5 as well as Figure 6 , the pressing portion 31 protrudes toward the first electrode layer 12, and the pressing portion 31 directly or indirectly presses against the dielectric layer 20. That is, the pressing portion 31 is closer to the dielectric layer 20 than the bonding portion 32, and after the bonding portion 32 is bonded to the first flexible substrate layer 11, the protruding pressing portion 31 can press against the dielectric layer 20 better.

[0106] Exemplarily, the protrusion of the pressing portion 31 toward the first electrode layer 12 may be a protrusion structure such as a columnar protrusion, a spherical protrusion or a prism protrusion.

[0107] It is understandable that when the covering layer 30 is a flat material layer (such as a metal layer or an insulating material layer), a pressing block may be provided between the covering layer 30 and the dielectric layer, and the covering layer 30 is pressed against the pressing block to indirectly press against the dielectric layer.

[0108] In some embodiments of the present application, for example, in an embodiment where the thickness of the abutting portion 31 is greater than the thickness of the bonding portion 32, see Figure 5 as well as Figure 6 The depth of the first groove 111 is greater than the thickness of the dielectric layer 20, and the pressing portion 31 is at least partially embedded in the first groove 111, so that the pressing portion 31 presses against the dielectric layer 20 indirectly or directly in the first groove 111, thereby ensuring the contact reliability of the pressing portion 31 and avoiding the phenomenon that the pressing portion 31 is offset and fails to press against the dielectric layer 20 as the tumor treatment transducer is bent.

[0109] In some embodiments of the present application, for example, in an embodiment where the thickness of the abutting portion 31 is greater than the thickness of the bonding portion 32, see Figure 7 , Figure 7Another structural schematic diagram of the tumor treatment transducer in the embodiment of the present application is shown, wherein the depth of the first groove 111 is approximately equal to the thickness of the dielectric layer 20, that is, the dielectric layer 20 is approximately flush with the first flexible substrate layer 11. When the tumor treatment transducer is in a normal state (not bent), since the thickness of the pressing portion 31 is greater than the thickness of the adhesive portion 32, the covering layer 30 itself is in a bent state at this time, and the elastic force generated by the bent state can ensure that the pressing portion 31 presses against the dielectric layer 20.

[0110] It is understandable that the depth of the first groove 111 may also be less than the thickness of the dielectric layer 20, for example, see Figure 8 , Figure 8 Another structural schematic diagram of the tumor treatment transducer in the embodiment of the present application is shown, in which the protruding portion of the dielectric layer 20 is outside the first groove 111, thereby supporting the pressing portion 31 of the covering layer 30, so that the dielectric layer 20 and the pressing portion 31 are pressed against each other.

[0111] In some embodiments of the present application, see Fig. 9 , Fig. 9 Another structural schematic diagram of the tumor treatment transducer in the embodiment of the present application is shown, wherein the tumor treatment transducer also includes a second conductive carrier 90; the second conductive carrier 90 includes a second flexible substrate layer 91 and a pressing conductive layer 92 which are bonded to each other, and the pressing conductive layer 92 is located on a side of the second flexible substrate layer 91 adjacent to the first flexible substrate layer 11; the second conductive carrier 90 covers the first groove 111, the first flexible substrate layer is bonded to the second flexible substrate layer, the pressing conductive layer 92 is opposite to the first groove 111, and the pressing conductive layer 92 is directly or indirectly pressed against the dielectric layer 20.

[0112] Specifically, the second flexible substrate layer 91 of the second conductive carrier 90 can be one or more of polyimide, polyester film, silicone resin, polyvinyl chloride, polyethylene, polytetrafluoroethylene, chloroprene rubber or polyvinyl acetal. For example, the second flexible substrate layer 91 includes a polyimide material layer and a polyester film material layer bonded to each other; the abutting conductive layer 92 can be a thinner metal or a non-metallic layer with flexibility, conductivity and waterproof properties, such as a metal layer such as a metal copper foil or a metal silver foil with a thickness of 0.1 mm to 1 mm, or a non-metallic layer such as a transparent tin-doped indium oxide conductive film (Indium Tin Oxides, ITO) or a fluorine-doped tin oxide conductive film (F-doped Tin Oxide, FTO).

[0113] In some embodiments of the present application, the second conductive carrier 90 may be a flexible circuit board with a flexible material such as polyimide, polyester film, silicone resin, polyvinyl chloride, polyethylene, polytetrafluoroethylene, chloroprene rubber or polyvinyl acetal as a substrate.

[0114] In the above embodiment, in combination with the embodiment of the present application in which the first conductive carrier 10 is a circuit board, that is, by bonding the flexible substrate of one circuit board to the flexible substrate of another circuit board, the conductive layer of one circuit board can be indirectly or directly pressed against the dielectric layer 20 in the first groove 111 corresponding to the flexible substrate of the other circuit board, thereby ensuring the electrical connectivity between the layers of the thin film capacitor and avoiding the air gap ionization phenomenon or the tip discharge phenomenon caused by the interlayer gap phenomenon of the thin film capacitor; at the same time, since the dielectric layer 20 is located in the first groove 111 and the other circuit board covers the first groove 111, the dielectric layer 20 can be fully protected, thereby better preventing moisture transmitted from the skin direction from entering the thin film capacitor; in addition, using two circuit boards to prepare a thin film capacitor can reduce the difficulty of preparing the thin film capacitor, and ultimately provide a thin film capacitor that is easy to process, easy to package and ensures electrical connectivity at the interface of each layer.

[0115] Further, in some embodiments of the present application, continue to refer to Fig. 9 , wherein the second flexible substrate layer 91 is arched in a direction away from the first flexible substrate layer 11. Since the second flexible substrate layer 91 is in a bent and deformed state, the second flexible substrate layer 91 will generate an elastic force to restore the deformation and point to the direction of the first flexible substrate layer 11 (first electrode layer 12). The elastic force makes the conductive layer 92 press against the dielectric layer 20, so that the layers of the thin film capacitor are in close contact, avoiding the phenomenon of interlayer gaps.

[0116] Further, in some embodiments of the present application, continue to refer to Fig. 9 The thickness of the dielectric layer 20 is less than the depth of the first groove 111, so that the abutting conductive layer 92 is at least partially embedded in the first groove 111 and abuts against the dielectric layer 20, ensuring the abutting reliability of the abutting conductive layer 92 and avoiding the phenomenon that the abutting conductive layer 92 is offset and fails to abut against the dielectric layer 20 as the thin film capacitor bends.

[0117] In some embodiments of the present application, the thickness of the dielectric layer 20, the depth of the first groove 111, and the thickness of the abutting conductive layer 92 satisfy the following relationship:

[0118] H2>H-H1

[0119] Wherein, H is the depth of the first groove 111 , H1 is the thickness of the dielectric layer 20 , and H2 is the thickness of the abutting conductive layer 92 .

[0120] It should be noted that, since the thickness of the dielectric layer 20, the depth of the first groove 111 and the thickness of the second electrode layer 50 satisfy the above relationship, it means that there is still some space left after the dielectric layer 20 is set in the first groove 111, and the height of the abutting conductive layer 92 is greater than the height of the remaining space, so part of the abutting conductive layer 92 can be embedded in the first groove 111, and the remaining part is outside the first groove 111. Since the second flexible substrate layer 91 needs to be bonded to the first flexible substrate layer 11, the abutting conductive layer 92 partially exposed outside the first groove 111 causes a height difference in the bonding of the second flexible substrate layer 91, thereby causing the second flexible substrate layer 91 to bend in an arch shape in a direction away from the first flexible substrate layer 11 after bonding, ultimately ensuring that the second flexible substrate layer 91 bends and generates an elastic force against the dielectric layer 20.

[0121] In some embodiments of the present application, see Fig.10 as well as Fig.11 , Fig.10 FIG. 1 shows a schematic structural diagram of a side of the first conductive carrier 10 facing the second conductive carrier 90 in an embodiment of the present application. Fig.11 The schematic diagram of the structure of the second conductive carrier 90 facing the first conductive carrier 10 in the embodiment of the present application is shown, the first flexible substrate layer 11 has a first edge region 112 surrounding the first groove 111; and has a second edge region 911 surrounding the conductive layer 92, and the first edge region 112 is bonded to the second edge region 911. In other words, the first flexible substrate layer 11 and the second flexible substrate layer 91 are bonded in a ring shape around the first groove 111, so that the first flexible substrate layer 11 and the second flexible substrate layer 91 are fully bonded and external moisture or impurities are prevented from entering the first groove 111.

[0122] It can be understood that the first flexible substrate layer 11 and the second flexible substrate layer 91 can also bond the first groove 111 and the areas on opposite sides of the conductive layer 92 (for example, both sides of the length direction or width direction of the first groove 111), so that the first flexible substrate layer 11 and the second flexible substrate layer 91 are bonded.

[0123] Further, in some embodiments of the present application, continue to refer to Fig. 9 An adhesive layer 93 is filled between the first edge region 112 and the second edge region 911 to facilitate bonding the first flexible substrate layer 11 and the second flexible substrate layer 91 to each other.

[0124] In some embodiments of the present application, see Fig.12 , Fig.12Another structural schematic diagram of the tumor treatment transducer in the embodiment of the present application is shown, wherein the tumor treatment transducer also includes a defect repair layer 40, the defect repair layer 40 is bonded to the side of the dielectric layer 20 away from the first electrode layer 12, and the side of the dielectric layer 20 facing the defect repair layer 40 has microscopic pits 21, and the defect repair layer 40 is tightly combined with the dielectric layer 20 to fill the microscopic pits 21.

[0125] It should be noted that there are surface defects on the surface of the dielectric layer 20. The surface defects refer to the unevenness that may exist on the surface under some process methods of forming the dielectric layer 20. Such interface defects make it easy for air gap ionization to occur when it contacts the metal electrode layer again due to the existence of gaps.

[0126] In the above embodiment, a defect repair layer 40 is provided on the side of the dielectric layer 20 away from the first electrode layer 12, and the defect repair layer 40 is utilized to compensate for the surface defects of the side of the dielectric layer 20 away from the first electrode layer 12, so that the defect repair layer 40 is tightly combined with the dielectric layer 20 and fits with the inner wall surface of the microscopic pit 21, thereby avoiding the generation of tiny gaps between the dielectric layer 20 and the defect repair layer 40 and the resulting air gap ionization phenomenon, which is beneficial to ensuring the safety of the tumor treatment transducer in the tumor treatment electrode patch.

[0127] In some embodiments of the present application, the defect repair layer 40 is conductive to avoid increasing the thickness of the tumor treatment transducer dielectric layer 20 to ensure the capacitance of the tumor treatment transducer. In other embodiments of the present application, the defect repair layer 40 can be made of an insulating material to avoid the dielectric layer 20 of the tumor treatment transducer being broken down.

[0128] In some embodiments of the present application, the defect repair layer 40 is a metal layer. In some embodiments of the present application, the material of the defect repair layer 40 can be one or a combination of Al, Ti, Au, Ag, Zn, Cu, Pt, Cr, Fe, Sn or Ni. For example, the defect repair layer 40 includes a magnetron sputtered Al material layer, a Zn material layer and an Ag material layer in sequence. For another example, the defect repair layer 40 includes a magnetron sputtered Al material layer or an Au material layer. In some embodiments of the present application, the defect repair layer 40 can be formed by spin coating or spray coating of non-metallic materials such as graphite, conductive silicon, silicon dioxide, zirconium oxide, etc.

[0129] In some embodiments of the present application, for example, for an embodiment in which the defect repair layer 40 is a metal layer, the thickness of the defect repair layer 40 is 1 nm to 1000 nm. Preferably, the thickness of the defect repair layer 40 is 10 nm to 800 nm. More preferably, the thickness of the defect repair layer 40 is 50 nm to 300 nm. The defect repair layer 40 can have good flexibility when it meets the above-mentioned size range, and can also prevent the defect repair layer 40 from being too thick and prone to cracking due to bending, or from being too thin and failing to completely cover the dielectric layer 20.

[0130] In some embodiments of the present application, the defect repair layer 40 includes multiple metal layers. It should be noted that when the defect repair layer 40 is a metal layer, the defect repair layer 40 may undergo an oxidation reaction with oxygen in the air, thereby causing the defect repair layer 40 to fail. In the above embodiments, since the defect repair layer 40 includes multiple metal layers, the metal layer away from the dielectric layer can be made of a material with relatively weaker metal activity (i.e., a metal material with more stable chemical properties) than the metal layer close to the dielectric layer, so as to protect the metal layer close to the dielectric layer, thereby avoiding the phenomenon of oxidation failure of the metal layer close to the dielectric layer.

[0131] In some embodiments of the present application, the defect repair layer 40 includes overlapping aluminum metal layers and zinc metal layers, and the aluminum metal layer is located between the zinc metal layer and the dielectric layer 20, that is, the aluminum metal layer first covers the dielectric layer 20, and then the zinc metal layer covers the aluminum metal layer. Since the aluminum metal layer has good ductility and a conductive layer, the phenomenon of cracks in the aluminum metal layer when the tumor treatment transducer is bent can be avoided as much as possible; at the same time, the zinc metal layer has good calendering properties and stable chemical properties, which can protect the aluminum metal layer from oxidation failure and avoid cracks in the zinc metal layer.

[0132] It can be understood that the defect repair layer 40 can also include multiple layers of aluminum metal layers and zinc metal layers arranged in an alternating manner, that is, there is a zinc metal layer between adjacent aluminum metal layers, and there is an aluminum metal layer between adjacent zinc metal layers, so that the multiple layers of aluminum metal layers and zinc metal layers arranged in an alternating manner serve as multiple metal layers; or, the defect repair layer 40 can also include multiple layers of sub-metal layers of different materials (such as aluminum, silver, zinc, titanium and gold) or sub-metal layers of the same material (such as aluminum, gold).

[0133] In some embodiments of the present application, the defect repair layer 40 includes overlapping aluminum metal layers and gold (Au) metal layers, and the aluminum metal layer is located between the gold (Au) metal layer and the dielectric layer 20, so that the gold (Au) metal layer with more stable chemical properties protects the aluminum metal layer.

[0134] In some embodiments of the present application, the defect repair layer 40 includes an overlapping aluminum metal layer and a titanium metal layer, and the aluminum metal layer is protected by the titanium metal layer having stable chemical properties and high structural strength.

[0135] In some embodiments of the present application, the defect repair layer 40 can be formed on the side of the dielectric layer 20 away from the first electrode layer 12 by magnetron sputtering. During the magnetron sputtering process, the target material (such as aluminum) is sputtered by ion bombardment to produce target atoms or molecules with small diameters that can be deposited and enter the tiny pits on the surface of the dielectric layer 20, thereby compensating for the surface defects of the dielectric layer 20. In some embodiments of the present application, the defect repair layer 40 can also be formed on the side of the dielectric layer 20 away from the first electrode layer 12 by electron beam evaporation. During the electron beam evaporation process, accelerated electrons are used to bombard the coating material (such as gold, titanium), and the kinetic energy of the electrons is converted into heat energy to heat and evaporate the coating material, and finally the defect repair layer 40 is formed on the surface of the dielectric layer 20.

[0136] In some embodiments of the present application, for example, for an embodiment in which the defect repair layer 40 includes overlapping aluminum metal layers and zinc metal layers, when preparing the defect repair layer 40, an aluminum metal layer can be first formed on the surface of the dielectric layer 20 by magnetron sputtering, and then a zinc metal layer can be formed on the aluminum metal layer by magnetron sputtering.

[0137] In some embodiments of the present application, for example, the defect repairing layer 40 includes an overlapping aluminum metal layer and a zinc metal layer, the thickness of the aluminum metal layer is 5 nm to 500 nm, and the thickness of the zinc metal layer is 5 nm to 500 nm.

[0138] In some embodiments of the present application, the material of the defect repair layer 40 can be at least one of non-conductive oxides, nitrides, carbides and insulating polymers, wherein: oxides, nitrides, carbides: are selected from at least one of silicon dioxide, silicon nitride, zirconium oxide, boron nitride, aluminum nitride, chromium carbide and aluminum oxide. Insulating polymers: are selected from at least one of siloxane polymers, silazane polymers, polymethyl methacrylate (PMMA), polyimide (PI), polyethylene (PE), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyurethane (PU), fluorinated ethylene propylene copolymer (FEP), fusible polytetrafluoroethylene (PFA), ethylene-tetrafluoroethylene copolymer (ETFE), polyetheretherketone (PEEK), polysilazane, polycarbonate, silicone resin, fluoride materials and rubber to enhance the insulation performance of the dielectric layer 20 and prevent the dielectric layer 20 from being broken down.

[0139] In some embodiments of the present application, for example, for embodiments in which the defect repair layer 40 can be made of an insulating material, the thickness of the defect repair layer 40 is 1 nm to 1000 nm. Preferably, the thickness of the defect repair layer 40 is 5 nm to 800 nm. More preferably, the thickness of the defect repair layer 40 is 10 nm to 300 nm. The thickness of the defect repair layer 40 satisfies the above-mentioned dimensional relationship. On the one hand, it can avoid the defect repair layer 40 being too thick, which increases its brittleness and causes cracking when the tumor treatment transducer is bent. On the other hand, it can also avoid the phenomenon that the capacitance of the tumor treatment transducer is reduced due to the defect repair layer 40 being too thick.

[0140] In some embodiments of the present application, the defect repair layer 40 can be formed on the dielectric layer 20 by magnetron sputtering. During the magnetron sputtering process, the target material (such as silicon dioxide) is sputtered by ion bombardment to produce target atoms or molecules with small diameters, which can be deposited and enter the tiny pits on the surface of the dielectric layer 20, so that the defect repair layer 40 is tightly combined with the dielectric layer 20 and fills the microscopic pits 21, thereby compensating for the surface defects of the dielectric layer 20. In some embodiments of the present application, the defect repair layer 40 can also be formed on the dielectric layer 20 by electron beam evaporation. During the electron beam evaporation process, accelerated electrons are used to bombard the coating material (such as silicon dioxide), and the kinetic energy of the electrons is converted into heat energy to heat and evaporate the coating material, and finally the defect repair layer 40 is formed on the surface of the dielectric layer 20.

[0141] It is understandable that the defect repairing layer 40 can also be formed on the surface of the dielectric layer 20 by physical vapor deposition, such as arc plasma plating, ion plating and molecular beam epitaxy, so as to compensate for the surface defects of the dielectric layer 20.

[0142] In some embodiments of the present application, see Fig.12 , wherein a side of the dielectric layer 20 facing away from the first electrode layer 12 has a first roughness, and a side of the defect repairing layer 40 facing away from the dielectric layer 20 has a second roughness, wherein the second roughness is less than or equal to the first roughness.

[0143] Preferably, the second roughness is smaller than the first roughness. After the defect repair layer 40 is formed on the dielectric layer 20, the defect repair layer 40 is tightly combined with the microscopic pits of the dielectric layer 20, and the larger pits corresponding to the first roughness of the dielectric layer 20 are partially filled, thereby reducing the plane height difference caused by the microscopic pits, so that the second roughness of the side of the defect repair layer 40 away from the dielectric layer 20 is smaller. After the second electrode layer 50 is bonded to the defect repair layer 40, the tip discharge phenomenon between the second electrode layer 50 and the defect repair layer 40 can be weakened.

[0144] It should be noted that the roughness (first roughness, second roughness, etc.) referred to in this application may refer to the arithmetic mean of the contour deviation of the object within the sampling length, or may refer to the sum of the average value of multiple (for example, 5) largest contour peak heights and the average value of multiple (for example, 5) largest contour valley depths within the sampling length of the object, or may refer to the distance between the contour peak top line and the contour valley bottom line within the sampling length of the object. When measuring the first roughness and the second roughness, the surface roughness of the defect repair layer 40 can be measured by an atomic force microscope (AFM) or a scanning probe microscope (SPM), and then the surface roughness of the dielectric layer 20 can be measured after the defect repair layer 40 is removed. For example, the defect repair layer 40 can be removed by chemical corrosion, and then the surface roughness of the dielectric layer 20 can be measured by a scanning probe microscope; alternatively, the thin film capacitor can be cut open through a cutting plane perpendicular to the dielectric layer 20, and the cross-sectional view of the thin film capacitor can be magnified through an electron microscope, and finally the corresponding roughness can be calculated through the contour lines between the interfaces (for example, the interface between the dielectric layer 20 and the defect repair layer 40 or the surface contour line of the defect repair layer 40, etc.).

[0145] In some embodiments of the present application, see Fig.13 as well as Fig.14 , Fig.13 Another structural schematic diagram of the tumor treatment transducer in the embodiment of the present application is shown. Fig.14 A schematic diagram of another bending state of the tumor treatment transducer in an embodiment of the present application is shown, wherein the tumor treatment transducer also includes a second electrode layer 50, and the second electrode layer 50 is in contact with the defect repair layer 40, so that the second electrode layer 50 and the first electrode layer 12 form the two poles of the tumor treatment transducer.

[0146] In some embodiments of the present application, for example, for an embodiment in which the defect repairing layer 40 is conductive, please refer to Fig.13 as well as Fig.14 The tumor treatment transducer further includes a flexible conductive layer 60 ; one side of the flexible conductive layer 60 is bonded to the defect repairing layer 40 , and the other side is bonded to the second electrode layer 50 .

[0147] Specifically, the flexible conductive layer 60 has conductivity and a small elastic modulus, so that the flexible conductive layer 60 electrically connects the defect repair layer 40 with the second electrode layer 50, ensuring the electrical connectivity between the defect repair layer 40 and the second electrode layer 50. At the same time, the small elastic modulus of the flexible conductive layer 60 can avoid the phenomenon of tiny gaps between the defect repair layer 40 and the second electrode layer 50, and prevent the occurrence of tip ionization between the defect repair layer 40 and the second electrode layer 50.

[0148] In some embodiments of the present application, the thickness of the flexible conductive layer 60 is 0.001 mm to 1 mm. Preferably, the thickness of the flexible conductive layer 60 is 0.01 mm to 0.8 mm. More preferably, the thickness of the flexible conductive layer 60 is 0.1 mm to 0.6 mm. Specifically, the thickness of the flexible conductive layer 60 meets the above dimensions, which can avoid the phenomenon that the flexible conductive layer 60 is too thick and causes its flexibility to decrease, and can also prevent the flexible conductive layer 60 from being too thin and causing it to crack.

[0149] Preferably, the flexible conductive layer 60 may include conductive paper, so that the flexible conductive layer 60 further has higher tensile and tearing strength, and avoids the flexible conductive layer 60 from being torn when the tumor treatment transducer is bent in contact with the human body surface. In some embodiments of the present application, the flexible conductive layer 60 may also include conductive rubber or conductive silicone.

[0150] It can be understood that the flexible conductive layer 60 can also be formed by stacking at least two of conductive paper, conductive rubber and conductive silicone. For example, conductive paper and conductive rubber are stacked to form the first flexible conductive layer 60. The conductive paper ensures the tensile properties of the flexible conductive layer 60, while the conductive rubber ensures the elasticity of the flexible conductive layer 60.

[0151] In some embodiments of the present application, see Fig.13 as well as Fig.14 , the defect repairing layer 40 and the flexible conductive layer 60 are at least partially located in the first groove 111, the second electrode layer 50 covers the first groove 111, and the edge area of ​​the second electrode layer 50 is in contact with the first flexible substrate layer 11. The second electrode layer 50 is partially embedded in the first groove 111 and pressed against the flexible conductive layer 60, so that the flexible conductive layer 60 and the defect repairing layer 40, the second electrode layer 50 and the flexible conductive layer 60 are in close contact, and the phenomenon of gaps between the flexible conductive layer 60 and the defect repairing layer 40, and between the second electrode layer 50 and the flexible conductive layer 60 is avoided.

[0152] Exemplarily, the second electrode layer 50 may be a relatively thin metal, such as a metal copper foil or a metal silver foil with a thickness of 0.1 mm to 1 mm.

[0153] In some embodiments of the present application, see Fig.15 , Fig.15 A schematic diagram of the structure of a tumor treatment transducer in an embodiment of the present application is shown, wherein the insulating layer 70 is further included, and the insulating layer 70 is arranged between the dielectric layer 20 and the first electrode layer 12. Specifically, the insulating layer 70 can improve the anti-breakdown performance of the tumor treatment transducer, thereby effectively preventing the dielectric layer 20 of the tumor treatment transducer from being broken down and damaged, which is beneficial to ensure the safety of the tumor treatment transducer in the tumor treatment electrode patch.

[0154] In some embodiments of the present application, the insulation strength of the insulating layer 70 is greater than the insulation strength of the dielectric layer 20. Exemplarily, the material of the insulating layer 70 can be a soluble insulating material such as silicon dioxide, ceramic, rubber, zirconium oxide or polydimethylsiloxane to enhance the insulation performance of the dielectric layer 70 and prevent the dielectric layer 20 from being broken down.

[0155] In some embodiments of the present application, the thickness of the insulating layer 70 is 1 nm to 1000 nm. Preferably, the thickness of the insulating layer 70 is 5 nm to 800 nm. More preferably, the thickness of the insulating layer 70 is 10 nm to 300 nm. The thickness of the insulating layer 70 satisfies the above-mentioned dimensional relationship. On the one hand, it can avoid the insulating layer 70 being too thick in some cases (for example, the insulating layer 70 is not flexible or has poor flexibility) and causing its brittleness to increase, thereby causing cracking when the tumor treatment transducer is bent. On the other hand, it can also avoid the phenomenon that the capacitance of the tumor treatment transducer is greatly reduced due to the insulating layer 70 being too thick.

[0156] In some embodiments of the present application, the insulating layer 70 may be formed on the first electrode layer 12 exposed in the first groove 111 by magnetron sputtering, and then the dielectric layer 20 is formed in the first groove. In some embodiments of the present application, the insulating layer 70 may also be formed on the first electrode layer 12 exposed in the first groove 111 by electron beam evaporation. In some embodiments of the present application, the insulating layer 70 may be formed on the first electrode layer 12 exposed in the first groove 111 by spin coating of an organic solution, for example, by spin coating a solution containing a polydimethylsiloxane soluble insulating material.

[0157] It can be understood that the insulating layer 70 can also be directly attached to the first electrode layer 12 exposed in the first groove 111, thereby achieving the purpose of improving the anti-breakdown performance of the dielectric layer 30 of the tumor treatment transducer; or, the insulating layer 70 can also be formed by physical vapor deposition, such as arc plasma plating, ion plating and molecular beam epitaxy.

[0158] In some embodiments of the present application, the tumor treatment transducer further includes a conductive attachment layer 80 attached to the first electrode layer 12. The conductive attachment layer 80 is flexible and sticky so as to adhere to the surface of human skin through the conductive attachment layer 80 and minimize contact damage caused by mismatch between the tumor treatment transducer and soft tissue. Exemplarily, the conductive attachment layer 80 can be a conductive hydrogel or a conductive silicone gel.

[0159] It is worth noting that the above contents about the tumor treatment transducer are intended to clearly illustrate the implementation verification process of the present application. Under the guidance of the present application, those skilled in the art can also make equivalent modified designs. For example, continue to refer to Fig.16 , Fig.16 A structural schematic diagram of a tumor treatment transducer in an embodiment of the present application is shown, wherein the tumor treatment transducer can also simultaneously set a first defect repair layer 41 and a second defect repair layer 42, wherein the first defect repair layer 41 is made of an insulating material to prevent the dielectric layer 20 from being broken down, and the second defect repair layer 42 is made of a conductive material.

[0160] Furthermore, in order to better implement the tumor treatment transducer in the embodiment of the present application, on the basis of the tumor treatment transducer, the present application also provides a method for preparing the tumor treatment transducer, see Fig.17 , Fig.17 A schematic flow chart of a method for preparing a tumor treatment transducer in an embodiment of the present application is shown, wherein the method for preparing the tumor treatment transducer comprises:

[0161] Step S1401, providing a first conductive carrier 10, wherein the first conductive carrier 10 has a first side close to the skin and a second side away from the skin, and the first conductive carrier 10 comprises a first flexible substrate layer 11 and a first electrode layer 12 attached to each other, wherein the first flexible substrate layer 11 is located on the second side of the first conductive carrier 10, and the first electrode layer 12 is located on the first side of the first conductive carrier 10;

[0162] Step S1402, forming a first groove 111 on the first flexible substrate layer 11, wherein the first groove 111 penetrates at most to the first electrode layer 12 along the direction from the second side toward the first side;

[0163] Step S1403 , forming a dielectric layer 20 in the first groove 111 , and the dielectric layer 20 is bonded to the first electrode layer 12 .

[0164] The tumor treatment transducer prepared in the embodiment of the present application is configured such that the first side of the first conductive carrier 10 facing the skin is set as the first electrode layer 12, and the second side of the first conductive carrier 10 is the first flexible substrate layer 11, and a first groove 111 is provided on the first electrode layer 12. Since the first groove 111 penetrates the first electrode layer 12 along the direction from the second side toward the first side, the dielectric layer 20 can be filled in the first groove 111 and fit with the first electrode layer 12 to achieve electrical contact, so that the side of the dielectric layer 20 facing the skin is protected by the first electrode layer 12, and the side of the dielectric layer 20 is protected by the first flexible substrate layer 11, so that the moisture transmitted from the skin direction can be better blocked, and the dielectric layer 20 is prevented from being infiltrated by moisture, thereby solving the problem of the dielectric layer 20 being broken down due to moisture.

[0165] In some embodiments of the present application, see Fig.17 , the preparation method of the tumor treatment transducer also includes:

[0166] Step S1404 : forming a covering layer 30 on a side of the first flexible substrate layer 11 away from the first electrode layer 12 , wherein the covering layer 30 covers the first groove 111 and is bonded to a side of the first flexible substrate layer 11 away from the first electrode layer 12 .

[0167] Step S1405 , forming a conductive attachment layer 80 on a side of the first electrode layer 12 facing away from the first flexible substrate layer 11 .

[0168] It should be noted that the cover layer 30 covers the first groove 111 and the edge area of ​​the first flexible substrate layer 11. When the tumor treatment transducer is bent, the edge of the first flexible substrate layer 11 pulls the cover layer 30 to bend. Since the dielectric layer 20 will indirectly or directly press against the cover layer 30, the bending radius of the cover layer 30 will be greater than the bending radius of the dielectric layer 20, and the middle of the cover layer 30 will produce pressure close to the first electrode layer 12, so that the cover layer 30 will indirectly or directly press against the dielectric layer 20, ensuring the electrical connectivity between the dielectric layer 20 and the cover layer 30, avoiding the generation of interlayer gaps between the functional layers and causing air gap ionization. The conductive attachment layer 80 is flexible and sticky, so that it can be adhered to the surface of human skin through the conductive attachment layer 80, and can minimize the contact damage caused by the mismatch between the tumor treatment transducer and the soft tissue.

[0169] In some embodiments of the present application, see Fig.18 , Fig.18 Another schematic flow chart of a method for preparing a tumor treatment transducer in an embodiment of the present application is shown, wherein the method for preparing a tumor treatment transducer comprises:

[0170] Step S1501, providing a first conductive carrier 10, the first conductive carrier 10 having a first side close to the skin and a second side away from the skin, the first conductive carrier 10 comprising a first flexible substrate layer 11 and a first electrode layer 12 attached to each other, the first flexible substrate layer 11 being located on the second side of the first conductive carrier 10, the first electrode layer 12 being located on the second side of the first conductive carrier 10, the first flexible substrate layer 11 having a first groove 111, the first groove 111 penetrating at most to the first electrode layer 12 in a direction from the second side toward the first side;

[0171] Step S1502, forming a dielectric layer 20 in the first groove 111, and the dielectric layer 20 is bonded to the first electrode layer 12;

[0172] Step S1503, forming a defect repairing layer 40 in the first groove 111, the defect repairing layer 40 is attached to the dielectric layer 20;

[0173] Step S1504, disposing a flexible conductive layer 60 in the first groove 111, and the flexible conductive layer 60 is laminated to the defect repairing layer 40;

[0174] Step S1505, forming a second electrode layer 50 on a side of the first flexible substrate layer 11 away from the first electrode layer 12, the second electrode layer 50 covers the first groove 111 and the covering area is in contact with the flexible conductive layer 60, and the edge area of ​​the second electrode layer 50 is bonded to the side of the first flexible substrate layer 11 away from the first electrode layer 12.

[0175] Furthermore, in order to better implement the tumor treatment transducer in the embodiment of the present application, on the basis of the tumor treatment transducer, the present application also provides a tumor treatment electrode patch, and the tumor treatment electrode patch includes the tumor treatment transducer of any of the above embodiments. Since the tumor treatment electrode patch in the embodiment of the present application is provided with the tumor treatment transducer of the above embodiment, it has all the beneficial effects of the above tumor treatment transducer, which will not be repeated here.

[0176] Furthermore, in order to better implement the tumor treatment electrode patch in the embodiment of the present application, on the basis of the tumor treatment electrode patch, the present application also provides a tumor treatment system, and the tumor treatment system includes the tumor treatment electrode patch as in any of the above embodiments. Since the tumor treatment system in the embodiment of the present application is provided with the tumor treatment transducer in the above embodiment, it has all the beneficial effects of the above tumor treatment transducer, which will not be described in detail here.

[0177] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, please refer to the detailed description of other embodiments above, and will not be repeated here.

[0178] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0179] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0180] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0181] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0182] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, documents, etc., cited in this application is hereby incorporated by reference in its entirety, except for application history documents that are inconsistent with or conflicting with the content of this application, and documents that limit the broadest scope of the claims of this application (currently or later attached to this application). It should be noted that if the descriptions, definitions, and / or use of terms in the accompanying materials of this application are inconsistent or conflicting with the content described in this application, the descriptions, definitions, and / or use of terms in this application shall prevail.

[0183] The above is a detailed introduction to a tumor treatment transducer and a preparation method thereof, a tumor treatment electrode patch, and a tumor treatment system provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for technical personnel in this field, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A tumor treatment transducer, characterized in that: include: a first conductive carrier having a first side close to the skin and a second side away from the skin; a dielectric layer, the dielectric layer being located on the second side of the first conductive carrier and being in electrical contact with the first conductive carrier; The first conductive carrier comprises a first flexible substrate layer and a first electrode layer attached to each other, the first flexible substrate layer is located on the second side of the first conductive carrier, and the first electrode layer is located on the first side of the first conductive carrier; The first flexible substrate layer is formed with a first groove, the first groove penetrates at most to the first electrode layer along the direction from the second side toward the first side, and the dielectric layer is located in the first groove.

2. The tumor treatment transducer according to claim 1, characterized in that: When the tumor therapeutic transducer is bent, the side surface of the dielectric layer may be separated from the side wall surface of the first groove.

3. The tumor treatment transducer according to claim 1, characterized in that: The tumor treatment transducer further includes a covering layer, which covers the first groove and is bonded to a side of the first flexible substrate layer facing away from the first electrode layer, and the covering layer is directly or indirectly pressed against the dielectric layer.

4. The tumor treatment transducer according to claim 3, characterized in that: The covering layer comprises a pressing portion and an adhesive portion surrounding the pressing portion; The pressing portion is opposite to the first groove, and the bonding portion is bonded to a surface of the first flexible substrate layer facing away from the first electrode layer.

5. The tumor treatment transducer according to claim 4, characterized in that: The pressing portion protrudes toward the first electrode layer, and the pressing portion presses against the dielectric layer indirectly or directly.

6. The tumor treatment transducer according to claim 4, characterized in that: The depth of the first groove is greater than the thickness of the dielectric layer, and the abutting portion is at least partially embedded in the first groove.

7. The tumor treatment transducer according to claim 1, characterized in that: The tumor treatment transducer further includes a second conductive carrier; The second conductive carrier comprises a second flexible substrate layer and a close-fitting conductive layer which are attached to each other, and the close-fitting conductive layer is located on a side of the second flexible substrate layer adjacent to the first flexible substrate layer; The second conductive carrier covers the first groove, the first flexible substrate layer is bonded to the second flexible substrate layer, the abutting conductive layer is opposite to the first groove, and the abutting conductive layer abuts against the dielectric layer indirectly or directly.

8. The tumor treatment transducer according to claim 7, characterized in that: The thickness of the dielectric layer is smaller than the depth of the first groove, and the abutting conductive layer is at least partially embedded in the first groove.

9. The tumor treatment transducer according to claim 8, characterized in that: The thickness of the dielectric layer, the depth of the first groove and the thickness of the abutting conductive layer satisfy the following relationship: H2>H-H1 Wherein, H is the depth of the first groove, H1 is the thickness of the dielectric layer, and H2 is the thickness of the abutting conductive layer.

10. The tumor treatment transducer according to claim 7, characterized in that: The first flexible substrate layer has a first edge region surrounding the first groove; The device has a second edge region surrounding the abutting conductive layer, and the first edge region is bonded to the second edge region.

11. The tumor treatment transducer according to claim 1, characterized in that: The tumor treatment transducer further comprises a defect repair layer, wherein the defect repair layer is bonded to a side of the dielectric layer away from the first electrode layer; A side of the dielectric layer facing the defect repairing layer has microscopic pits, and the defect repairing layer is tightly combined with the dielectric layer to fill the microscopic pits.

12. The tumor treatment transducer according to claim 11, characterized in that: A side of the dielectric layer facing away from the first electrode layer has a first roughness, and a side of the defect repairing layer facing away from the dielectric layer has a second roughness; Wherein, the second roughness is less than or equal to the first roughness.

13. The tumor treatment transducer according to claim 12, characterized in that: The tumor treatment transducer further includes a second electrode layer, which is in contact with the defect repairing layer.

14. The tumor treatment transducer according to claim 13, characterized in that: The tumor treatment transducer also includes a flexible conductive layer; One side of the flexible conductive layer is bonded to the defect repairing layer, and the other side is bonded to the second electrode layer.

15. The tumor treatment transducer according to claim 14, characterized in that: At least a portion of the defect repairing layer and the flexible conductive layer are located in the first groove; The second electrode layer covers the first groove, and an edge area of ​​the second electrode layer is in contact with the first flexible substrate layer.

16. The tumor treatment transducer according to claim 1, characterized in that: The tumor treatment transducer further includes an insulating layer, which is arranged between the dielectric layer and the first electrode layer.

17. The tumor treatment transducer according to claim 16, characterized in that: The insulation strength of the insulating layer is greater than the insulation strength of the dielectric layer 。 18. The tumor treatment transducer according to claim 1, characterized in that: The side of the first electrode layer facing the skin is also provided with a conductive hydrogel.

19. The tumor treatment transducer according to claim 1, characterized in that: The area of ​​the first groove is 1 cm 2 Up to 1200cm 2 Preferably, the area of ​​the first groove is 3cm 2 Up to 100cm 2 .

20. The tumor treatment transducer according to claim 1, characterized in that: The distance between the edge of the first flexible substrate layer and the first groove is 0.2 mm to 10 mm.

21. The tumor treatment transducer according to claim 1, characterized in that: The depth of the first groove is 0.005 mm to 2 mm.

22. A method for preparing a tumor treatment transducer, characterized in that: include: Providing a first conductive carrier, the first conductive carrier having a first side close to the skin and a second side away from the skin, the first conductive carrier comprising a first flexible substrate layer and a first electrode layer attached to each other, the first flexible substrate layer being located on the second side of the first conductive carrier, and the first electrode layer being located on the first side of the first conductive carrier; forming a first groove on the first flexible substrate layer, wherein the first groove penetrates at most to the first electrode layer along the direction from the second side toward the first side; A dielectric layer is formed in the first groove, and the dielectric layer is attached to the first electrode layer.

23. A tumor treatment electrode patch, characterized in that: Comprising the tumor treatment transducer according to any one of claims 1 to 17.

24. A tumor treatment system, characterized in that: Comprising the tumor treatment electrode patch as described in claim 19.

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