Device interconnection assembly, preparation method thereof and electronic equipment

Abstract

The embodiment of the invention discloses a device interconnection assembly, a preparation method thereof and electronic equipment, relates to a mechanical structure, and solves the problem of poor performance at a device interconnection position. According to the specific scheme, a first continuous phase structure layer is formed on the surface of a first device, the first continuous phase structure layer comprises first metal particles with large particle sizes and pores penetrating through the first metal particles, and the first metal particles are connected with one another. And forming a prefabricated layer containing second metal particles with small particle sizes on the surface of the second device, laminating the prefabricated layer and the first continuous phase structure layer, and then sintering to enable the second metal particles to enter the pores and be connected to form a second continuous phase structure. The second continuous phase structure is connected with the first metal particles. Liquid or gas is discharged from the pores in the sintering process, so that the texture of the composite layer is uniform. The first metal particles and the second metal particles with different sizes are mutually filled, so that the connection strength and the heat transfer performance of the first device and the second device are improved, and meanwhile, gaps provide buffering for stress.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of mechanical structures, and in particular to a device interconnection assembly and a preparation method thereof, and an electronic device. Background Art

[0002] In the process of device production and assembly, the interconnection of devices is a common process. As the performance requirements of devices increase, the connection performance requirements of the interconnection of devices also increase accordingly. At present, the structural performance of connecting two devices is poor, resulting in poor performance at the device connection. Summary of the invention

[0003] The embodiments of the present application provide a device interconnection assembly and a method for preparing the same, and an electronic device, which improve the problem of poor performance at device connections.

[0004] In order to achieve the above objectives, this application adopts the following technical solutions:

[0005] In a first aspect, a device interconnection assembly is provided, the device interconnection assembly comprising a first device, a second device and a composite layer; the composite layer is connected to the first device on one side and to the second device on the other side; the composite layer comprises a first continuous phase structure and a second continuous phase structure, the first continuous phase structure comprises a plurality of pores and a plurality of first metal particles, the plurality of first metal particles are connected, and the pore is located between the plurality of first metal particles. The second continuous phase structure is located in the pore and is connected to the first metal particles, and the volume of the second continuous phase structure is smaller than the volume of the pore. The second continuous phase structure comprises a plurality of second metal particles, and the plurality of second metal particles are connected. Thus, the plurality of connected first metal particles provide excellent mechanical strength for the composite layer. The pores between the plurality of first metal particles can absorb force, and the plurality of pores provide buffering for the internal stress between the first device and the second device, thereby reducing the probability of cracks in the composite layer. Heat can be transferred through the connected first metal particles in the first continuous phase structure. The second continuous phase structure formed by the connection of the second metal particles has a better supporting strength, and heat can be transferred between the second continuous phase structures through the connected second metal particles. Since the second continuous phase structure is connected to the first metal particles, the second continuous phase structure assists the first metal particles in providing support for the first device and the second device. At the same time, the second continuous phase structure can increase the heat transfer area between the first metal particles, improve the heat transfer efficiency, and reduce the thermal resistance between the first device and the second device. In addition, the volume of the second continuous phase structure is smaller than the volume of the pores, and the existence of the second continuous phase structure will not destroy the buffering of the internal stress between the first device and the second device by the pores. In summary, the composite layer makes the support performance, heat transfer performance and internal stress buffering performance between the first device and the second device better. Furthermore, due to the presence of pores, the roughness of the composite layer itself is relatively large. Even if the roughness of the surface to be connected of the first device and the second device is relatively high, they can be connected through the composite layer, thereby reducing the processing accuracy requirements for the surface to be connected of the first device and the surface to be connected of the second device, thereby reducing manufacturing costs.

[0006] In combination with the first aspect, in some achievable methods, the particle size of the first metal particles is larger than the particle size of the second metal particles. The first metal particles with larger particle size make the pores of the first continuous phase structure larger, so that the composite layer has good buffering performance against force. After connecting multiple second metal particles with smaller particle sizes, the strength of the second continuous phase structure is higher. After the high-strength second continuous phase structure is connected to the first metal particles, the support strength and heat transfer performance of the first continuous phase structure can be improved.

[0007] In conjunction with the first aspect, in some achievable manners, the ratio of the particle size of the first metal particles to the particle size of the second metal particles is 50 to 1000. Thus, the particle sizes of the first metal particles and the second metal particles differ greatly, and the first metal particles can fill the area with smaller pore size, thereby increasing the support strength and heat transfer performance of the area.

[0008] In combination with the first aspect, in some achievable methods, the device interconnection component further includes: a first metal film, the two opposite sides of the first metal film are in contact with and connected to the first device and the composite layer respectively. In this way, the first metal film can protect the surface to be connected of the first device and reduce the influence of the composite layer on the first device. In addition, the first metal film and the first metal particles and the second metal particles all have the material properties of metal. In an embodiment where the surface to be connected of the first device is non-metallic, the material properties of the first metal film are closer to those of the composite layer relative to the first device, thereby increasing the connection performance.

[0009] In conjunction with the first aspect, in some achievable ways, the material of the first metal film is the same as the material of the first metal particles. In this way, the lattice constant of the first metal film is close to the lattice constant of the first metal particles, the internal stress between the first metal film and the first continuous phase structure is small, and when the first device is subjected to external force, the first metal film and the first continuous phase structure are not easy to delaminate. This is conducive to improving the connection strength between the composite layer and the first metal film.

[0010] In conjunction with the first aspect, in some achievable embodiments, the device interconnection assembly further includes: a second metal film, the second metal film being located between the second device and the composite layer. Thus, the second metal film can protect the surface to be connected of the second device and reduce the influence of the composite layer on the material properties in the second device.

[0011] In combination with the first aspect, in some achievable ways, the material of the second metal film is the same as the material of the first metal particles. In this way, the lattice constant of the second metal film is close to the lattice constant of the first metal particles, the internal stress between the second metal film and the first continuous phase structure is small, and when the first device is subjected to external force, the second metal film and the first continuous phase structure are not easy to delaminate. This is conducive to improving the connection strength between the composite layer and the second metal film.

[0012] In combination with the first aspect, in some achievable methods, the particle size of the first metal particles is 1 μm to 10 μm. Thus, the first metal particles connected to each other can form a first continuous phase structure with greater support strength, and the first metal particles with large particle sizes are not easy to melt and collapse in a high temperature environment. Even if the operating temperature of the device interconnection component is high, the connection performance between the first device and the second device can be guaranteed. The first metal particles have a large particle size and a large thickness of the composite layer, which is not conducive to forming a small device interconnection component. The first metal particles have a small particle size, which is not conducive to support strength, and the first metal particles with small particle sizes are easy to melt at high temperatures.

[0013] In combination with the first aspect, in some achievable methods, the particle size of the second metal particles is 20nm to 200nm. Thus, the second metal particles with small particle size are connected to the first metal particles, the gap between the second metal particles and the first metal particles is small, the thermal resistance is low and the connection strength is high. Even if the operating temperature of the device interconnection component is high, the second metal particles are partially melted, and after melting, the connection strength and heat transfer performance between the second metal particles and the first metal particles can be further increased.

[0014] In combination with the first aspect, in some achievable manners, the inner diameter of the pore is 200 nm to 1 μm. Thus, the pore of this size can accommodate the second continuous phase structure, and at the same time, the pore provides a buffer for the stress between the first device and the second device.

[0015] In conjunction with the first aspect, in some achievable manners, the material of the first metal particles includes at least one of silver, gold, copper and platinum. Thus, silver, gold, copper and platinum all have good heat transfer performance, which can reduce the thermal resistance between the first device and the second device.

[0016] In combination with the first aspect, in some achievable ways, the material of the second metal particles includes at least one of silver, gold, copper and platinum. Thus, silver, gold, copper and platinum all have good heat transfer performance, and the second continuous phase structure formed by the connection of the second metal particles can reduce the thermal resistance between the first device and the second device. In addition, in an embodiment where the first metal particles and the second metal particles are made of the same material, the lattice constants of the first metal particles and the second metal particles are close, the internal stress between the two is small, and the mechanical properties of the composite layer are improved.

[0017] In conjunction with the first aspect, in some achievable manners, the first device is a chip, and the second device is a printed circuit board. Thus, the composite layer provides a strong mechanical strength for the connection between the chip and the printed circuit board, and the pores in the composite layer can buffer the internal stress between the chip and the printed circuit board. In addition, the composite layer improves the heat transfer efficiency between the chip and the printed circuit board, and prevents high temperature from affecting the electrical performance of the chip.

[0018] In conjunction with the first aspect, in some achievable manners, the first device is an optical element, and the second device is a bracket. Thus, the composite layer provides strong mechanical strength for the optical element and the bracket, and in addition, the composite layer improves the heat transfer efficiency between the optical element and the bracket.

[0019] In a second aspect, a method for preparing a device interconnection assembly is provided, comprising: forming a first continuous phase structure layer on a first device. The first continuous phase structure layer comprises a plurality of pores and a plurality of first metal particles, the plurality of first metal particles are connected, and the pores are located between the plurality of first metal particles. A first prefabricated layer and a second device are stacked on the first continuous phase structure layer to form a preform. The preform comprises the first device, the first continuous phase structure layer, the first prefabricated layer and the second device stacked in sequence. The preform is sintered so that the first prefabricated layer forms a second continuous phase structure connected to the first metal particles in the pores. The second continuous phase structure comprises a plurality of second metal particles, the plurality of second metal particles are connected. The first continuous phase structure layer formed by connecting a plurality of first metal particles has a better supporting strength, and heat can be transferred between the first continuous phase structure layers through the first metal particles connected to each other. The second continuous phase structure is formed by sintering, and during the sintering process, the first metal particles in the first continuous phase structure layer are not easy to collapse, and the supporting performance and heat transfer performance of the first continuous phase structure layer will hardly deteriorate due to sintering. The plurality of connected second metal particles assist the support and heat transfer capabilities of the first continuous phase structure layer. In addition, after sintering, a second continuous phase structure is formed on the inner wall of the pores. The pores have a flow-guiding function during the sintering process, which can be used for liquid or gas discharge, thereby preventing gas and liquid from gathering in the first continuous phase structure layer and causing the first continuous phase structure layer to be uneven. In addition, the presence of the pores can buffer the internal stress between the first device and the second device.

[0020] In conjunction with the second aspect, in some achievable methods, the step of stacking the first prefabricated layer and the second device on the first continuous phase structure layer to form a prefabricated part includes: forming the first prefabricated layer on the second device; and laminating the first prefabricated layer and the first continuous phase structure layer to form the prefabricated part. Thus, in this method, the first prefabricated layer can be first formed on the surface to be connected of the second device, which is convenient for preprocessing the first prefabricated layer. In addition, the support of the second device to the first prefabricated layer facilitates the adjustment of the shape of the first prefabricated layer.

[0021] In conjunction with the second aspect, in some achievable ways, the step of forming the first continuous phase structure layer on the first device includes: forming a second prefabricated layer on the first device; the second prefabricated layer includes the first dispersant and the second metal particles mixed with each other; and sintering the second prefabricated layer to form the first continuous phase structure layer. Thus, by sintering the first dispersant and the first metal particles, the first metal particles can be kept in a granular state while being connected to each other, and the pores between the first metal particles have a guiding effect on the liquid or gas of the first dispersant, thereby obtaining a first continuous phase structure layer with a uniform texture.

[0022] In conjunction with the second aspect, in some achievable ways, the first prefabricated layer includes a second dispersant and the second metal particles that are mixed with each other. Thus, at least part of the second metal particles in the first prefabricated layer can diffuse into the pores. During the sintering process of the preform, a second continuous phase structure is formed in situ, and the pores have a guiding effect on both the second dispersant and the first metal particles in the first prefabricated layer, so that the second metal particles are relatively evenly distributed in the first continuous phase structure layer.

[0023] In conjunction with the second aspect, in some achievable methods, before the step of forming the first continuous phase structure layer on the first device, the step further includes: forming a first metal film on the first device; the step of forming the first continuous phase structure layer on the first device includes: forming the first continuous phase structure layer on the surface of the first metal film away from the first device. Thus, the first metal film can reduce the impact on the first device during the sintering process of the preform, and in addition, the first metal film can also improve the morphology of the surface of the first device and improve the connection strength between the first device and the first continuous phase structure layer.

[0024] In a third aspect, an electronic device is provided, the electronic device comprising: a housing and any one of the device interconnection components provided in the first aspect, the device interconnection component being located in the housing. Due to the composite layer of the device interconnection component, the supporting performance, heat transfer performance, and internal stress buffering performance of the first device and the second device are improved. Obviously, the performance of the electronic device is also improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0026] Figure 2 It is a schematic diagram of the structure of a chip and a printed circuit board in the related technology.

[0027] Figure 3 A cross-sectional schematic diagram of an interconnection assembly provided in an embodiment of the present application.

[0028] Figure 4 A further cross-sectional schematic diagram of a device interconnection assembly provided in an embodiment of the present application.

[0029] Figure 5 Another cross-sectional schematic diagram of a device interconnection assembly provided in an embodiment of the present application.

[0030] Figure 6a A process flow chart of a device interconnection assembly provided in an embodiment of the present application.

[0031] Figure 6b To complete Figure 6a Schematic diagram of the structure after S1.

[0032] Figure 6c To complete Figure 6a Schematic diagram of the structure after S2.

[0033] Figure 6d For execution Figure 6a Schematic diagram of the structure during the S3 process.

[0034] Figure 6e A microscope scan of a device interconnect assembly provided in an embodiment of the present application.

[0035] Figure 6f This is a scanning image of the composite layer provided in an embodiment of the present application taken using an ultrasonic scanning microscope.

[0036] Figure 6g for Figure 6e A magnified schematic diagram of center A.

[0037] Figure 6h for Figure 6g A magnified schematic diagram of point B in the middle.

[0038] Figure 7a For execution Figure 6a A process flow chart of S1 in FIG.

[0039] Figure 7b To complete Figure 7a Schematic diagram of the structure after S11.

[0040] Figure 7c To complete Figure 7a Scanning microscope scan of the surface of the first continuous phase structure after S12.

[0041] Figure 7d To complete Figure 7a Scanning microscope scan of the first device and the first continuous phase structure.

[0042] Figure 8a For execution Figure 6a A process flow chart of S2.

[0043] Figure 8b To complete Figure 8a Schematic diagram of the structure after S21.

[0044] Figure 9a A process flow chart of another device interconnection assembly provided in an embodiment of the present application.

[0045] Figure 9b To complete Figure 9a Schematic diagram of the structure after S4.

[0046] In the figure: 01-chip; 02-printed circuit board; 03-solder layer; 20-electronic device; 21-housing; 10-device interconnection assembly; 11-first device; 12-second device; 101-body; 102-substrate; 100-composite layer; 13-first metal film; 14-second metal film; 110-first continuous phase structure; 111-pores; 112-first metal particles; 120-second continuous phase structure; 121-second metal particles; 130-first prefabricated layer; 140-prefabricated part; 150-second prefabricated layer. DETAILED DESCRIPTION

[0047] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0048] In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0049] In addition, in the present application, directional terms such as "upper" and "lower" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the changes in the orientation of the components in the drawings.

[0050] Figure 1 For a structural diagram of an electronic device 20 provided in an embodiment of the present application, please refer to Figure 1 The embodiment of the present application provides an electronic device 20, which includes a device interconnection assembly 10 and a housing 21, wherein the device interconnection assembly 10 is located in the housing 21. The interconnection assembly 10 includes a first device 11, a second device 12, and a composite layer 100. The first device 11 and the second device 12 are connected through the composite layer 100.

[0051] The embodiment of the present application does not limit the type of the electronic device 20. In some embodiments, the electronic device 20 is an optical module, the first device 11 is an optical device (such as a reflector), and the second device 12 is a bracket. The optical device and the bracket are both located in the housing 21. In other embodiments, the electronic device 20 is a device packaging structure, the housing 21 is a packaging component, the first device 11 is a chip, and the second device 12 is a printed circuit board. The embodiment of the present application does not limit the type of chip, for example, it can be an insulated gate bipolar transistor (IGBT) or a metal oxide semiconductor field effect transistor (MOSFET). Alternatively, the electronic device 20 is not limited to an optical module and a device packaging structure. In some other embodiments, the electronic device 20 can be a radio frequency module or a micro-electro-mechanical system (MEMS), etc. The following description takes the first device 11 as a chip and the second device 12 as a printed circuit board as an example. The same applies to the other examples.

[0052] Figure 2 This is a schematic diagram of the structure of the chip 01 and the printed circuit board 02 in the related art, please refer to Figure 2 , the chip 01 and the printed circuit board 02 are connected by the solder layer 03. For example, solder is filled between the chip 01 and the printed circuit board 02, and the solder is heated and condensed to form the solder layer 03. Figure 2 As shown, after the solder is heated, holes exist in the solder layer 03 due to factors such as wetting or reflow. The existence of holes makes the chip 01 and the printed circuit board 02 not tightly connected, the connection strength is low, and the outgassing rate of the solder layer 03 is large. The chip 01 and the printed circuit board 02 are not easy to be used in a vacuum system, and their use is limited. Uneven holes also increase the thermal resistance of the solder layer 03, reduce the heat dissipation performance of the chip 01, and affect the service life of the chip 01. In addition, when the contact area between the chip 01 and the printed circuit board 02 is large, the proportion of holes in the solder layer 03 is significantly increased, further exacerbating the aforementioned effects.

[0053] Therefore, the embodiment of the present application provides a device interconnection assembly 10, which aims to improve the strength of the connection between the first device 11 and the second device 12. The performance of the device interconnection assembly 10 is optimized.

[0054] like Figure 1 As shown, in an embodiment where the first device 11 is a chip, the first device 11 includes a body 101 and a substrate 102, the substrate 102 is connected to the body 101, and one side of the composite layer 100 is connected to the substrate 102, and the other side is connected to the second device 12. The heat of the substrate 102 can be transferred to the second device 12 through the composite layer 100.

[0055] The embodiment of the present application does not limit the size of the surface to be connected of the first device 11. For example, the size of the end surface of the surface to be connected of the first device 11 is in the range of 10 mm (millimeter) × 10 mm to 100 mm × 100 mm. The embodiment of the present application does not limit the material of the end surface of the first device 11 close to the composite layer 100. For example, the material includes at least one of silicon, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum and iron.

[0056] Similarly, the embodiment of the present application does not limit the size and material of the end face of the second device 12 close to the composite layer 100. Please refer to the description of the first device 11 above, which will not be repeated here. The embodiment of the present application does not limit the ratio of the size of the end face of the first device 11 close to the composite layer 100 to the size of the end face of the second device 12 close to the composite layer 100. For example, the former is greater than or equal to the latter, or the former is smaller than the latter. In addition, the material of the end face of the first device 11 close to the composite layer 100 and the material of the end face of the second device 12 close to the composite layer 100 can be the same or different.

[0057] Figure 3 This is a schematic cross-sectional view of the device interconnect assembly 10 provided in an embodiment of the present application, and the cross-sectional view is parallel to the thickness direction of the composite layer 100. Figure 3 The first device 11 and the second device 12 are located on two opposite sides of the composite layer 100 , and the first device 11 and the second device 12 are connected to two opposite surfaces of the composite layer 100 , respectively.

[0058] Figure 3 In the embodiment, the composite layer 100 includes a first continuous phase structure 110 and a second continuous phase structure 120. The first continuous phase structure 110 includes a plurality of pores 111 and a plurality of first metal particles 112, the plurality of first metal particles 112 are connected, the pores 111 are located between the plurality of first metal particles 112, and the plurality of pores 111 are interconnected. The volume of the second continuous phase structure 120 is smaller than the volume of the pores 111, the second continuous phase structure 120 is located in the pores 111 and is connected to the first metal particles 112, the second continuous phase structure 120 includes a plurality of second metal particles 121, the plurality of second metal particles 121 are connected, and the second metal particles 121 and the first metal particles 112 are connected.

[0059] The continuous phase structure includes but is not limited to: metal atoms on the surface of metal particles diffuse to the interface of adjacent metal particles and fuse, so that two or more metal particles fuse into an integral structure. The present application embodiment does not limit the process for producing the aforementioned atomic diffusion and fusion. For example, it can be a sintering process.

[0060] Heat can be conducted between the interconnected metal particles. In this way, the first continuous phase structure 110 including a plurality of connected first metal particles 112 provides a higher mechanical strength for the composite layer 100. The first metal particles 112 connected to each other provide a higher heat transfer efficiency for the composite layer 100. In addition, the pores 111 have the effect of stress buffering, which can reduce the probability of cracks in the composite layer 100 and increase the reliability of the composite layer 100. When the first device 11 and the second device 12 are subjected to external force, the pores 111 can absorb part of the external force and weaken the influence of the external force on the composite layer 100. The second continuous phase structure 120 formed by connecting a plurality of second metal particles 121 is connected to the inner wall of the pore 111, which can increase the density of the composite layer 100. The second continuous phase structure 120 assists the first metal particles 112 in supporting and improves the supporting performance of the composite layer 100. Heat can also be conducted between the second metal particles 121 connected to each other, thereby improving the heat transfer efficiency of the composite layer 100. Furthermore, the volume of the second continuous phase structure 120 is smaller than the volume of the pores 111, and the presence of the second continuous phase structure 120 will not destroy the buffering of the internal stress between the first device 11 and the second device 12 by the pores 111. When gas or liquid is generated during the use of the first device 11 and the second device 12, the gas or liquid can be discharged from the pores 111. Due to the presence of the pores 111, the roughness of the composite layer 100 itself is relatively large. Even if the surface roughness of the first device 11 and the second device 12 is relatively high, a good connection can be achieved through the composite layer 100, reducing the processing accuracy requirements for the surface to be connected of the first device 11 and the surface to be connected of the second device 12, thereby reducing the manufacturing cost. As a result, the connection strength and thermal conductivity between the first device 11 and the second device 12 are guaranteed.

[0061] In the embodiment where the first device 11 is a chip and the second device 12 is a printed circuit board, the composite layer 100 ensures good heat transfer efficiency between the chip and the printed circuit board, thereby guaranteeing the performance of the chip. In the embodiment where the first device 11 is a reflector and the second device is a bracket, the composite layer 100 ensures the connection performance and heat transfer performance between the reflector and the bracket.

[0062] The embodiment of the present application does not limit the number of the first continuous phase structure 110 in the composite layer 100. For example, the number of the first continuous phase structure 110 is one, two, three or more. In the embodiment where there are multiple first continuous phase structures 110, the shapes and sizes of the multiple first continuous phase structures 110 may be different or the same. In addition, in the embodiment where there are multiple first continuous phase structures 110, two adjacent first continuous phase structures 110 may be connected or not connected.

[0063] The embodiment of the present application does not limit the number of the first metal particles 112 connected to form a first continuous phase structure 110 , for example, the number may be two, three, four or more.

[0064] The embodiment of the present application does not limit the number of first metal particles 112 that enclose a pore 111. For example, there may be two, three, four, or more first metal particles 112. The embodiment of the present application does not limit the relationship between the size and shape of the multiple pores 111. The size and shape of the multiple pores 111 are not the same or not completely the same.

[0065] The embodiment of the present application does not limit the shape of the first metal particles 112 . For example, the first metal particles 112 may be spherical, ellipsoidal, or irregular in shape.

[0066] The embodiment of the present application does not limit the material of the first metal particles 112. For example, the material of the first metal particles 112 includes at least one of silver, gold, copper and platinum. Silver, gold, copper and platinum all have good thermal conductivity, which can improve the thermal conductivity of the first continuous phase structure 110. In addition, the particles of silver, gold, copper and platinum are easy to connect to form a continuous phase structure. The preparation cost is low.

[0067] The embodiment of the present application does not limit the particle size of the first metal particles 112. For example, the particle size of the first metal particles 112 is 1 μm (micrometer) to 10 μm. For example, the particle size of the first metal particles 112 is 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm or 10 μm. It is understandable that the particle sizes of the plurality of first metal particles 112 may be different. When the particle size of the first metal particles 112 is within the above range, the mechanical strength of the first continuous phase structure 110 is high, so that the composite layer 100 has a greater support strength. In addition, the sinterable temperature of the micron-sized first metal particles 112 is relatively high. When the operating temperature of the device interconnection assembly 10 is relatively high, the pores 111 between the first metal particles 112 are not easy to collapse, and the support performance of the composite layer 100 is good. If the particle size of the first metal particles 112 is relatively small (for example, less than 1 μm), it is not conducive to the support strength of the first continuous phase structure 110, and the support strength of the first continuous phase structure 110 is low. If the particle size of the first metal particles 112 is larger (for example, larger than 10 μm), the size of the first continuous phase structure 110 will increase accordingly, which is not conducive to reducing the volume and mass of the device interconnect assembly 10 .

[0068] The embodiment of the present application does not limit the size of the second continuous phase structure 120. For example, the volume of the second continuous phase structure 120 is smaller than the volume of the pore 111. There is a gap between the second continuous phase structure 120 and the inner wall of the pore 111. The embodiment of the present application does not limit the size ratio of the gap to the second continuous phase structure 120.

[0069] The embodiment of the present application does not limit the inner diameter of the pore 111. Exemplarily, the average pore diameter of the pore 111 is 1 μm to 10 μm, for example, the average pore diameter is 1 μm, 2 μm, 3 μm, 5 μm, 6 μm, 8 μm or 10 μm, etc. If the average pore diameter of the pore 111 is small (for example, less than 1 μm), it is not conducive to the absorption of internal stress by the pore 111. In the use scenario where the force between the first device 11 and the second device 12 is large, cracks may appear in the first continuous phase structure 110. If the average pore diameter of the pore 111 is large (for example, greater than 10 μm), it is not conducive to the support strength of the first continuous phase structure 110.

[0070] The embodiment of the present application does not limit the shape of the second continuous phase structure 120. For example, the second continuous phase structure 120 may have a plurality of interconnected channels inside, or the second continuous phase structure 120 may be a solid structure.

[0071] The size of the second continuous phase structure 120 is smaller than the inner diameter of the pore 111. The pores 111 are distributed in the composite layer 100, the degassing rate of the composite layer 100 is small, and the device interconnect assembly 10 can be used in a vacuum environment. The embodiment of the present application does not limit the number of second continuous phase structures 120 in a pore 111. For example, a pore 111 includes one, two, three or more second continuous phase structures 120. Alternatively, some pores 111 may not include the second continuous phase structure 120.

[0072] The embodiment of the present application does not limit the number of second metal particles 121 connected to first metal particles 112 . For example, one first metal particle 112 is connected to one, two or more second metal particles 121 , or two or more first metal particles 112 are connected to one second metal particle 121 .

[0073] The present embodiment of the present application does not limit the material of the second metal particles 121. For example, the material of the second metal particles 121 includes at least one of silver, gold, copper and platinum. Silver, gold, copper and platinum all have good thermal conductivity, which can improve the thermal conductivity of the second continuous phase structure 120, thereby improving the thermal conductivity of the composite layer 100.

[0074] In some embodiments, the first metal particles 112 and the second metal particles 121 are made of the same metal material, for example, the first metal particles 112 and the second metal particles 121 are made of copper. In this way, the lattice constants of the second continuous phase structure 120 and the first continuous phase structure 110 are relatively close, and the connection strength between the second continuous phase structure 120 and the first continuous phase structure 110 is relatively large, thereby improving the strength of the composite layer 100.

[0075] In some embodiments, the particle size of the first metal particles 112 is larger than the particle size of the second metal particles 121. Thus, the pores 111 between the plurality of first metal particles 112 provide excellent buffering performance. The connected plurality of second metal particles 121 improves the strength and heat transfer performance of the first continuous phase structure 110.

[0076] Exemplarily, the particle size of the second metal particle 121 is 20nm (nanometer) to 200nm. For example, the particle size of the second metal particle 121 can be 20nm, 30nm, 40nm, 50nm, 80nm, 90nm, 100nm, 110nm, 120nm, 150nm, 180nm, 190nm or 200nm. In this way, the second metal particle 121 enables the second continuous phase structure 120 to have a strong supporting ability, and at the same time, avoids the second continuous phase structure 120 from occupying a larger space of the pore 111. If the particle size of the second metal particle 121 is small (for example, less than 20nm), the supporting strength of the second continuous phase structure 120 formed by the second metal particles 121 will be weakened. If the particle size of the second metal particle 121 is large (for example, greater than 20nm), the space formed between the second metal particle 121 and the first metal particle 112 is large, which is not conducive to the conduction of heat between the two. It can be understood that the particle size and shape of the plurality of second metal particles 121 can be different.

[0077] The sinterable temperature of the nano-scale second metal particles 121 is relatively low. At high temperatures, the metal atoms on the surfaces of the plurality of second metal particles 121 are easily diffused and fused into an integral structure, thereby improving the heat transfer efficiency of the second continuous phase structure 120, thereby improving the heat transfer efficiency of the composite layer 100. The first continuous phase structure 110 in the pores 111 can improve the mechanical strength of the first continuous phase structure 110.

[0078] In addition, in the embodiment where the particle size of the second metal particles 121 is 20nm~200nm and the particle size of the first metal particles 112 is 1μm~10μm, the second continuous phase structure 120 formed by the first metal particles 112 can better fill the gap between two adjacent second metal particles 121, increase the connection strength between two adjacent second metal particles 121, and at the same time improve the heat transfer efficiency of the first continuous phase structure 110.

[0079] In some embodiments, the ratio of the particle size of the first metal particles 112 to the particle size of the second metal particles 121 is 50 to 1000. Exemplarily, the ratio of the particle size of the first metal particles 112 to the particle size of the second metal particles 121 is 50, 60, 70, 80, 90, 100, 150, 200, 260, 300, 350, 400, 450, 500, 600, 700, 800, 900 or 1000, etc. It can be understood that since the first metal particles 112 and the second metal particles 121 are not limited to uniform particle sizes. Obviously, the ratio of the particle size of the first metal particles 112 to the particle size of the second metal particles 121 is not limited to the same value. For example, the ratio of the particle size of some first metal particles 112 to the particle size of the second metal particles 121 is 100, and the ratio of the particle size of some first metal particles 112 to the particle size of the second metal particles 121 is 800, etc.

[0080] The difference between the particle size of the first metal particle 112 and the particle size of the second metal particle 121 is large, and the second metal particle 121 easily enters the gap between two adjacent first metal particles 112. The second continuous phase structure 120 provides good support performance and good thermal conductivity for the first metal particles 112, thereby improving the density of the composite layer 100. If the difference between the particle size of the first metal particle 112 and the particle size of the second metal particle 121 is small (for example, less than 50), the difference between the outer diameter of the second metal particle 121 and the first metal particle 112 after the cavity is overlapped is small, and the second metal particle 121 has limited auxiliary effect on the heat transfer and support strength of the first continuous phase structure 110. Similarly, if the difference between the particle size of the first metal particle 112 and the particle size of the second metal particle 121 is large (for example, greater than 1000), the size of the second continuous phase structure 120 formed by connecting multiple second metal particles 121 is smaller than that of the second metal particle 121, and the second continuous phase structure 120 has limited auxiliary effect on the first continuous phase structure 110.

[0081] Please refer again Figure 3 , the two opposite surfaces of the composite layer 100 are connected to the first device 11 and the second device 12 respectively. It can be understood that, in some embodiments, in order to further improve the connection strength between the first device 11 and the composite layer 100, a metal film may be further included between the first device 11 and the composite layer 100. Alternatively, in order to further improve the connection strength between the second device 12 and the composite layer 100, a metal film may be further included between the second device 12 and the composite layer 100. Figure 4 and Figure 5 This is explained by way of example.

[0082] Figure 4 This is another cross-sectional schematic diagram of the device interconnection assembly 10 provided in the embodiment of the present application. The cross section is parallel to the thickness direction of the composite layer 100. Figure 4 and Figure 3 , Figure 4 and Figure 3 The difference is that a first metal film 13 is further included between the first device 11 and the composite layer 100. For the rest of the description, please refer to Figure 3 The first metal film 13 and the composite layer 100 are stacked, and the first device 11 and a side of the first metal film 13 away from the composite layer 100 are in contact and connected.

[0083] The first metal film 13 has a protective effect on the first device 11, preventing the composite layer 100 from affecting the performance of the first device 11. The first metal film 13 can increase the connection strength between the first device 11 and the composite layer 100. In addition, the first metal film 13 having a material property closer to that of the composite layer 100 can be selected to improve the problem of mismatching material properties between the first device 11 and the composite layer 100. Exemplarily, in an embodiment where the material properties of the first device 11 and the material properties of the composite layer 100 are greatly different, the first metal film 13 can improve the problems caused by the large difference in the aforementioned material properties. For example, in an embodiment where the material of the first device 11 is a non-metal (such as silicon) and the material of the composite layer 100 is a metal, the metal in the first metal film 13 can improve the problem of poor matching performance between the non-metal and the metal, and increase the connection strength between the first device 11 and the composite layer 100. In addition, the first metal film 13 can improve the roughness of the surface of the first device 11, which is beneficial to the connection between the composite layer 100 and the first metal film 13.

[0084] The embodiment of the present application does not limit the connection method between the first metal film 13 and the composite layer 100. For example, the first metal film 13 and the composite layer 100 are connected to form a continuous phase structure, so that the connection strength and thermal conductivity of the first metal film 13 and the composite layer 100 are good.

[0085] The embodiment of the present application does not limit the type of the first metal film 13. For example, the first metal film 13 is a plated film, or the first metal film 13 is a film formed by curing a conductive paste, or the first metal film 13 is a film formed by sputtering.

[0086] The embodiment of the present application does not limit the thickness of the first metal film 13. Exemplarily, the thickness of the first metal film 13 is 0.1μm to 1μm. For example, the thickness of the first metal film 13 is 0.1μm, 0.2μm, 0.3μm, 0.4μm, 0.5μm, 0.6μm, 0.7μm, 0.8μm, 0.9μm or 1μm.

[0087] The present embodiment does not limit the material of the first metal film 13 , and illustratively, the material is at least one of silver, gold, copper, platinum, titanium, molybdenum, chromium and tungsten. The good thermal conductivity of the above materials can improve the thermal conductivity between the composite layer 100 and the first metal film 13 .

[0088] The first metal film 13 may be a single-layer film structure or a film structure formed by stacking multiple layers. For example, the first metal film 13 may include a stacked copper layer and a silver layer, or a stacked molybdenum layer, a platinum layer, and a silver layer.

[0089] In some embodiments, the first metal film 13 and the first metal particles 112 are made of the same material. Therefore, the lattice constants of the first metal film 13 and the first metal particles 112 are close, the internal stress between the first metal film 13 and the first continuous phase structure 110 is small, the first metal film 13 and the composite layer 100 are not easily delaminated, and the mechanical strength is good.

[0090] Figure 5 Another cross-sectional schematic diagram of the device interconnection assembly 10 provided in the embodiment of the present application is shown in FIG. Figure 5 and Figure 3 , Figure 5 and Figure 3 The difference is that Figure 5 In the embodiment, a second metal film 14 is further included between the second device 12 and the composite layer 100. The second metal film 14 and the composite layer 100 are stacked, and the second device 12 is in contact with and connected to a side of the second metal film 14 away from the composite layer 100.

[0091] The performance of the second metal film 14 can be found in Figure 4 The description of the first metal film 13 is not repeated here.

[0092] In some embodiments, the device interconnect assembly 10 may include a first metal film 13 and a second metal film 14. In other words, the first metal film 13 and the second metal film 14 may be disposed on opposite sides of the composite layer 100. In this way, the first metal film 13 may improve the connection strength and thermal conductivity of the first device 11 and the composite layer 100. The second metal film 14 may improve the connection strength and thermal conductivity of the second device 12 and the composite layer 100. Thus, the connection strength and thermal conductivity between the first device 11 and the second device 12 are improved.

[0093] As described above, the embodiments of the present application do not limit the types of the first device 11 and the second device 12 , and the material of the end surface of the first device 11 close to the composite layer 100 may be different from the material of the end surface of the second device 12 close to the composite layer 100 .

[0094] In the embodiment where the material of the end surface of the first device 11 close to the composite layer 100 is non-metal (e.g., silicon or ceramic), and the material of the end surface of the second device 12 close to the composite layer 100 is metal (e.g., copper or aluminum), the material properties (e.g., lattice constant, thermal conductivity) of the first metal film 13 and the composite layer 100 are closer than those of the first device 11. The first metal film 13 can improve the matching performance of the first device 11 and the composite layer 100. Similarly, the material properties of the second metal film 14 and the composite layer 100 are closer than those of the second device 12. The second metal film 14 can improve the matching performance of the second device 12 and the composite layer 100, thereby improving the performance of the connection between the first device 11 and the second device 12 as a whole.

[0095] In addition, in the embodiment where the material of the end surface of the first device 11 close to the composite layer 100, the material of the end surface of the second device 12 close to the composite layer 100 and the material of the composite layer 100 are all different metals, the provision of the first metal film 13 and the second metal film 14 can improve the problem of internal stress caused by the difference in performance of different metals.

[0096] The present application embodiment does not limit the preparation process of the device interconnection assembly 10. Figure 6a and Figure 9a The process of the device interconnect assembly 10 is described as an example.

[0097] Figure 6a For a process flow chart of a device interconnect assembly 10 provided in an embodiment of the present application, please refer to Figure 6a , the preparation method of the device interconnection component comprises:

[0098] S1. Figure 6b As shown, a first continuous phase structure 110 is formed on the first device 11 .

[0099] Figure 6b To complete Figure 6a The schematic diagram of the structure after S1 in FIG. 1 shows a first device 11 having one or more first continuous phase structures 110 on its surface. The first continuous phase structure 110 includes a plurality of pores 111 and a plurality of first metal particles 112 , and the plurality of first metal particles 112 are connected to form a plurality of pores 111 .

[0100] In some embodiments, before forming the first continuous phase structure 110 on the first device 11, the first device 11 may be pretreated. For example, the surface to be connected of the first device 11 is first polished, then the surface of the material to be connected is cleaned with acetone or alcohol, then the surface to be connected is washed with deionized water, and then dried.

[0101] The embodiment of the present application does not limit the pore size of the pore 111 of the first continuous phase structure 110. For example, the pore size of the pore 111 is greater than or equal to 200 nm. For example, the pore size of the pore 111 is 200 nm, 210 nm, 220 nm, 250 nm, 300 nm, 400 nm, or 500 nm.

[0102] The present embodiment does not limit the thickness of the first continuous phase structure 110 , and illustratively, the thickness is 1 μm to 10 μm, such as 1 μm, 2 μm, 3 μm, 4 μm, 7 μm, 8 μm or 10 μm, etc. The thickness can be set according to the size of the first device 11 and the second device 12 .

[0103] The embodiment of the present application does not limit the porosity of the first continuous phase structure 110, and the porosity of the first continuous phase structure 110 can be set according to the density and support strength of the first continuous phase structure 110. Exemplarily, the porosity of the first continuous phase structure 110 is greater than or equal to 20%, for example, it can be 20%, 22%, 25%, 28%, 30%, 35% or 40%, etc.

[0104] The present application embodiment performs Figure 6a The method of S1 is not limited. Figure 7a For execution Figure 6a For a process flow chart of S1, please refer to Figure 7a , S1 includes:

[0105] S11. Figure 7b As shown, a second prefabricated layer 150 is formed on the first device 11 .

[0106] Figure 7b To complete Figure 7a In the structural diagram after S11, the present embodiment does not limit the method for forming the second prefabricated layer 150. Exemplarily, the second prefabricated layer 150 is coated on the surface of the first device 11 by screen printing or the like.

[0107] S12. Sintering the second prefabricated layer 150 to form Figure 6b A first continuous phase structure 110 is shown.

[0108] Among them, the second prefabricated layer 150 includes a first dispersant and first metal particles 112 that are mixed with each other. The first dispersant can disperse the first metal particles 112. During the sintering process, the first dispersant volatilizes, and multiple first metal particles 112 are connected to each other, and pores are formed between the multiple first metal particles 112. The particle size of the first metal particles 112 is related to the sintering temperature, the strength required between the first device and the second device, etc., and can be set according to requirements. For example, the particle size of the first metal particles 112 is 1μm to 10μm, for example, it can be 1μm, 2μm, 5μm or 10μm, etc. Within this range, the supporting strength of the first metal particles 112 is better. For example, the thickness of the second prefabricated layer 150 is 10μm to 100μm, for example, it can be 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm or 100μm, etc.

[0109] Exemplarily, the first dispersant includes at least one of oxalic acid, terpineol, ethylene glycol, isopropyl alcohol, acetone and ethanol. The first dispersant can disperse the first metal particles 112. In addition, the fluidity of the second prefabricated layer 150 can be reduced by adjusting the ratio of the first dispersant and the first metal particles 112 to prevent the first metal particles 112 from overflowing.

[0110] It is understandable that during the sintering process, adjacent first metal particles 112 are connected to each other. Pores 111 are formed between the first metal particles 112. The sintering temperature can be adjusted according to the particle size of the first metal particles 112 to prevent the first metal particles 112 from collapsing and filling the pores 111. The pores 111 of the first continuous phase structure 110 can buffer the force. In addition, during the sintering process, the surfaces of the first continuous phase structure 110 and the first device 11 also form a continuous phase structure, and the connection strength between the two is improved. Due to reasons such as the diffusion and fusion of metal atoms on the surface of the first metal particles 112, the shapes of the first metal particles 112 in the first continuous phase structure 110 and the first metal particles 112 in the second prefabricated layer 150 are different.

[0111] For example, during the sintering process, it is not necessary to melt the entire second metal particle 121, so the sintering temperature is low, which has little effect on the performance of the first device 11. In addition, at this sintering temperature, the first metal particles 112 can be connected to each other but not melted, that is, there are pores 111 between the first metal particles 112. During the sintering process, the liquid conduction and exhaust functions of the pores 111 can be used to remove the first dispersant, etc., to avoid organic residues, and the gas formed between the first device 11 and the first continuous phase structure 110 can also be removed from the pores 111.

[0112] Figure 7c To complete Figure 7aScanning microscope scan of the surface of the first continuous phase structure 110 after S12, Figure 7d To complete Figure 7a Scanning image of the first device 11 and the first continuous phase structure 110 taken by a scanning microscope. Figure 7c The paper surface is parallel to the surface of the first continuous phase structure 110, Figure 7b The paper surface is perpendicular to the surface of the first continuous phase structure 110 . Figure 7c and Figure 7d It can be seen that the first continuous phase structure 110 has a plurality of interconnected pores and a plurality of interconnected metal particles, the pores are arranged between the metal particles, the pores run through the entire first continuous phase structure and are evenly distributed, and the first continuous phase structure has a uniform texture.

[0113] It is understandable that in other embodiments, the second prefabricated layer 150 may not include the first metal particles 112. Exemplarily, the second prefabricated layer 150 includes a metal compound and a first dispersant, and the metal oxide forms first metal particles 112 connected to each other during the sintering process, and pores 111 are provided between the first metal particles 112, that is, a first continuous phase structure 110 is formed. For example, the second prefabricated layer 150 includes silver carbonate, and silver carbonate is sintered to generate silver particles. Among them, the size of the first metal particles 112 and the size of the pores 111 can be controlled by controlling the concentration of the metal compound in the second prefabricated layer 150 or the sintering temperature and other conditions.

[0114] Please refer again Figure 6a ,implement Figure 6a After S1, it also includes:

[0115] S2. Figure 6c As shown, the first preform layer 130 and the second device 12 are stacked on the first continuous phase structure 110 to form a preform 140 .

[0116] Figure 6c To complete Figure 6a Schematic diagram of the structure after S2 in FIG. 1 , wherein the preform 140 includes a first device 11, a first continuous phase structure 110, a first prefabricated layer 130, and a second device 12 stacked in sequence. It can be understood that since the first continuous phase structure 110 includes pores 111, the first prefabricated layer 130 in the preform 140 may partially diffuse into the pores 111 of the first continuous phase structure 110, or the entire preform 140 may diffuse into the pores 111.

[0117] The embodiment of the present application does not limit the relative positional relationship between the first continuous phase structure 110 and the first prefabricated layer 130 in the preform 140. In some embodiments, the first prefabricated layer 130 is located above the first continuous phase structure 110, so that the second metal particles 121 in the first prefabricated layer 130 can enter the pores 111 by their own gravity, which is conducive to the full contact between the second metal particles 121 and the first continuous phase structure 110. In other embodiments, the first continuous phase structure 110 can be located above the first prefabricated layer 130.

[0118] In some embodiments, the projection of the first prefabricated layer 130 on the surface of the first continuous phase structure 110 is located within the first continuous phase structure 110. For example, in an embodiment where the area of ​​the surface to be connected of the first device 11 is larger than the area of ​​the surface to be connected of the second device 12, the first prefabricated layer 130 is connected to a device (second device 12) having a relatively small area of ​​the surface to be connected. The first continuous phase structure 110 is connected to a device (first device 11) having a relatively large area of ​​the surface to be connected. In this way, the first prefabricated layer 130 located above the first continuous phase structure 110 is not easy to overflow, thereby avoiding the problem of uneven density at the connection between the first device 11 and the second device 12 caused by the overflowing second metal particles 121.

[0119] In some embodiments, before laminating the second device 12, the second device 12 may be pre-processed as required. For example, the surface to be connected of the second device 12 may be polished, cleaned, and dried in sequence.

[0120] The embodiments of the present application are Figure 6a There is no restriction on the execution method of S2. Figure 8a For execution Figure 6a For a process flow chart of S2, please refer to Figure 8a , S2 includes:

[0121] S21. Figure 8b As shown, a first prefabricated layer 130 is formed on the second device 12 .

[0122] Figure 8b To complete Figure 8a In the structural diagram after S21, the present embodiment of the application does not limit the method for forming the first prefabricated layer 130. Exemplarily, the first prefabricated layer 130 is formed by a coating method such as screen printing.

[0123] S22. Laminating the first prefabricated layer 130 and the first continuous phase structure 110 to form Figure 6c Preform 140 is shown.

[0124] Figure 8aThe method shown can pre-connect the first prefabricated layer 130 and the second device 12, which is convenient for controlling the size of the first prefabricated layer 130. In the embodiment where the shapes of the surfaces to be connected of the first device 11 and the second device 12 are different, the first prefabricated layer 130 is first formed on the second device 12 and then stacked to form the preform 140, which is conducive to aligning the surfaces to be connected of the second device 12 and the first device 11. In the embodiment where the surface of the first prefabricated layer 130 is flexible (for example, paste or slurry), even if the surface of the second device 12 has a rough surface or the surface is a curved surface, the first prefabricated layer 130 and the second device 12 can be closely attached, thereby improving the bonding quality between the first prefabricated layer 130 and the second device 12, and making the cross-section of the first prefabricated layer 130 and the second device 12 well bonded. It is conducive to improving the mechanical strength between the second device 12 and the first device 11.

[0125] In addition, during the process of forming the first prefabricated layer 130 on the second device 12 , it is convenient to perform pretreatment such as activation on the first prefabricated layer 130 .

[0126] It is understood that in other embodiments, Figure 6a The method for executing step S2 may also include: first forming a first prefabricated layer 130 on the first continuous phase structure 110 , and then stacking the first prefabricated layer 130 and the second device 12 to form a prefabricated member 140 .

[0127] Please refer again Figure 6a After executing S2, it also includes:

[0128] S3. Figure 6d As shown, the preform 140 is sintered to form Figure 3 The device interconnect assembly 10 is shown.

[0129] Figure 6d For execution Figure 6a Schematic diagram of the structure in the process S3, wherein after the preform 140 is sintered, the first preformed layer 130 forms a second continuous phase structure 120 (such as Figure 3 ); the second continuous phase structure 120 is connected to the first metal particles 112. The second continuous phase structure 120 includes a plurality of second metal particles 121, and the plurality of second metal particles 121 are connected.

[0130] Figure 6e A microscope scan of a device interconnect assembly 10 provided in an embodiment of the present application is shown in FIG. Figure 6e It can be seen that the composite layer 100 between the first device 11 and the second device 12 has a uniform texture inside. Figure 6f This is a scanning image of the composite layer 100 provided in the embodiment of the present application taken with an ultrasonic scanning microscope. Figure 6fIn the figure, the dark gray area indicates that the density of the area is larger, and the light gray area indicates that the density of the area is smaller. Figure 6f It can be seen that the density in each area of ​​the composite layer 100 is uniform, which means that the support strength of each composite layer 100 is uniform and the pores 111 are still retained in the composite layer 100.

[0131] Figure 6g for Figure 6e The enlarged schematic diagram of point A in the middle. Figure 6g As can be seen in FIG. 1 , a plurality of first metal particles 112 are connected. Figure 6g The center line m is a connection interface of the plurality of first metal particles 112. The pores 111 are located between the plurality of first metal particles 112. The second continuous phase structure 120 is located in the pores 111 and connected to the inner wall of the pores 111. Figure 6h for Figure 6g The enlarged schematic diagram of point B in the middle, Figure 6h As can be seen from the figure, the second continuous phase structure 120 includes a plurality of second metal particles 121 connected to each other.

[0132] Thus, the preparation method provided in the embodiment of the present application forms a composite layer 100 with uniform texture and high support strength between the first device 11 and the second device 12. Compared with the solder welding process, the preparation method provided in the embodiment of the present application utilizes the pores 111 in the first continuous phase structure 110 to remove the gas and liquid during the sintering process, and avoids the liquid or solid in the sintering process directly sublimating and leaving uneven holes. The composite layer 100 obtained by this method has better interface quality and lower interface thermal resistance. For example, the thermal resistance of the composite layer 100 is less than or equal to 2mm 2 K / W (square millimeter. Kelvin per Watt), the connection strength is greater than or equal to 50MPa.

[0133] Secondly, the preparation method provided in the embodiment of the present application evenly distributes the pores 111 between the first device 11 and the second device 12. It is not necessary to fill the entire pore 111, and the connection strength between the first device 11 and the second device 12 can also be relatively high. In this way, it is not necessary to achieve high temperature and high pressure conditions to make the first device 11 and the second device 12 free of holes during the process. The purpose of excellent connection is achieved, while the requirements for process conditions are reduced, the manufacturing cost is reduced, and the impact of high temperature and high pressure on the performance of the first device 11 and the second device 12 is weakened. The pores 111 can also guide the gas or liquid generated during the use of the first device 11 and the second device 12. In addition, the pores 111 are distributed in the composite layer 100, the degassing rate of the composite layer 100 is small, and the device interconnection assembly 10 can be used in a vacuum environment.

[0134] The sintering temperature of the embodiment of the present application is lower than the welding temperature, which reduces the impact of high temperature on the performance of the first device 11 and the second device 12. In addition, the preparation method provided in the embodiment of the present application has few restrictions on the materials of the end faces to be connected of the first device 11 and the second device 12, and the materials of the end faces to be connected include but are not limited to: at least one of silicon, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum and iron.

[0135] In addition, compared with the vacuum diffusion welding process, the preparation method provided in the embodiment of the present application has lower requirements on the roughness of the end faces to be connected of the first device 11 and the second device 12. This method can be applied to more first devices 11 and second devices 12. Figure 6a The production method shown is less expensive.

[0136] Furthermore, the preparation method provided in the embodiment of the present application does not restrict the size of the first continuous phase structure 110 and the first prefabricated layer 130, and the size of the two has little effect on the performance of the composite layer 100 finally formed. Figure 6a The manufacturing method shown can also ensure excellent connection strength and heat transfer performance between the first device 11 and the second device 12. In other words, Figure 6a The manufacturing method shown has little restriction on the area of ​​the end faces to be connected of the first device 11 and the second device 12. For example, the area of ​​the end faces to be connected can be in the range of 10 mm×10 mm to 100 mm×100 mm.

[0137] The embodiments of the present application are Figure 6a The hot pressing sintering conditions in S3 are not limited. For example, the sintering conditions can be set according to the particle size of the first metal particles 112. During the sintering process, the first metal particles 112 do not completely melt. This can avoid the collapse of the pores 111. The sintering conditions have little effect on the performance of the first device 11 and the second device 12.

[0138] Under the condition that the end faces to be connected have the same size, the preparation method provided in the embodiment of the present application requires lower pressure compared with the micro-nano metal sintering method.

[0139] Based on the above, execute Figure 6a After S3, the first prefabricated layer 130 forms a second continuous phase structure 120 in the pores 111. The embodiment of the present application does not limit the type of the first prefabricated layer 130 that forms the second continuous phase structure 120.

[0140] In some embodiments, the first prefabricated layer 130 includes second metal particles 121 and a second dispersant mixed with each other, and the particle size of the second metal particles 121 is smaller than the particle size of the first metal particles 112. Figure 6a After S2, the second metal particles 121 in the first prefabricated layer 130 enter the pores 111. During the sintering process of the preform 140, the second metal particles 121 are sintered in situ to form the second continuous phase structure 120. Further, in an embodiment where the ratio of the particle size of the first metal particles 112 to the particle size of the second metal particles 121 is 50 to 1000, the second metal particles 121 are easier to enter the pores 111, and the second metal particles 121 can enter the smaller area between two adjacent first metal particles 112, which is beneficial to the connection between the second metal particles 121 and the first metal particles 112 during the sintering process.

[0141] The second dispersant in the first prefabricated layer 130 can avoid performing Figure 6a After S2, the second metal particles 121 agglomerate in the pores 111. Exemplarily, the second dispersant includes at least one of oxalic acid, terpineol, ethylene glycol, isopropanol, acetone and ethanol. The above dispersant can fully disperse the second metal particles 121, which is conducive to the subsequent second metal particles 121 being dispersed and entering the pores 111 (such as Figure 6b As shown). It is understood that the viscosity of the first prefabricated layer 130 can be adjusted by adjusting the mass fraction of the second metal particles 121 in the first prefabricated layer 130. Exemplarily, the viscosity is adjusted to reduce the fluidity of the first prefabricated layer 130 so that the first prefabricated layer 130 is located in the area to be connected.

[0142] The embodiment of the present application does not limit the thickness of the first prefabricated layer 130. Exemplarily, the thickness of the first prefabricated layer 130 may be 0.1 μm to 1 μm, for example, 0.1 μm, 0.2 μm, 0.3 μm, 0.5 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm.

[0143] In some embodiments, in order to increase the wettability of the first prefabricated layer 130, the dispersion of the second metal particles 121 in the first continuous phase structure 110 is increased. After forming the first prefabricated layer 130, before forming the preform 140, the method further includes: plasma activation treatment of the first prefabricated layer 130. The plasma activation treatment is beneficial to reducing the sintering temperature and sintering pressure of the preform 140, and can further reduce the influence of the temperature and pressure when sintering the preform 140 on the performance of the first device 11 and the second device 12.

[0144] Exemplarily, the gas for plasma activation treatment includes at least one of argon, nitrogen, oxygen and hydrogen. The pressure and gas flow rate of the plasma activation treatment of the first prefabricated layer 130 are not limited in the embodiment of the present application.

[0145] Similar to the aforementioned second prefabricated layer 150, in other embodiments, the first prefabricated layer 130 may not include the second metal particles 121. Exemplarily, the first prefabricated layer 130 includes a metal compound, and the metal oxide first forms the second metal particles 121 during the sintering process, and the second metal particles 121 continue to connect to form the second continuous phase structure 120. For example, the first prefabricated layer 130 includes silver carbonate, and the silver carbonate is sintered to generate silver particles. Among them, the second metal particles 121 can be controlled by controlling the concentration of the metal compound in the first prefabricated layer 130 or the sintering temperature and other conditions.

[0146] In some embodiments, before sintering the preform 140, the preform 140 is further pre-pressed. For example, pressure is applied to both sides of the preform 140 so that more first preformed layers 130 in the preform 140 can diffuse into the first continuous phase structure 110. In an embodiment where the first preformed layer 130 includes the second metal particles 121, the second metal particles 121 can enter the pores 111.

[0147] In some embodiments of the present application, the material of the end surface to be connected of the first device 11 and the material of the first metal particles 112 may have greatly different properties. Figure 9a As shown, the present embodiment provides another preparation process of the device interconnection assembly 10. Please refer to Figure 9a and Figure 6a , Figure 9a and Figure 6a The difference is that Figure 9a In the previous versions, S1 also included:

[0148] S4. Figure 9b As shown, a first metal film 13 is formed on the first device 11 .

[0149] Figure 9b To complete Figure 9a The schematic diagram of the structure after S4, wherein the first metal film 13 is formed on the end face to be connected of the first device 11. The embodiment of the present application does not limit the method of forming the first metal film 13, for example, it can be sputtering, deposition, electroplating or chemical plating.

[0150] Figure 9b S1 in the step includes: forming a first continuous phase structure 110 on a surface of the first metal film 13 away from the first device 11 .

[0151] The first metal film 13 can protect the first device 11. Reduce the impact of the hot pressing sintering process on the first device 11. The first metal film 13 can increase the connection performance between the first device 11 and the first continuous phase structure 110. In an embodiment where the material of the end surface to be connected of the first device 11 and the material of the first metal particles 112 are greatly different, the material of the first metal film 13 and the material of the first metal particles 112 can be the same, so that the connection performance of the first metal film 13 and the first metal particles 112 is better.

[0152] Furthermore, in S1 Figure 7a In the process flow shown in , during the sintering process to form the first continuous phase structure 110 , a continuous phase structure may also be formed between the first metal film 13 and the first continuous phase structure 110 , thereby increasing the connection performance between the first device 11 and the first continuous phase structure 110 .

[0153] and Figure 9a The method shown is similar to that shown in the figure. In some embodiments, a second metal film may be formed on the surface to be connected of the second device 12, which will not be described in detail here.

[0154] The preparation method provided in the embodiment of the present application can obtain a composite layer 100 with uniform texture, and the composite layer 100 has low thermal resistance, has a stress buffering effect, and improves the connection performance between the first device 11 and the second device 12.

[0155] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A device interconnect assembly, characterized in that: The device interconnect assembly comprises: a first device and a second device; and A composite layer, one side of the composite layer is connected to the first device, and the other side is connected to the second device; the composite layer includes a first continuous phase structure and a second continuous phase structure, the first continuous phase structure includes a plurality of pores and a plurality of first metal particles, and the plurality of first metal particles are connected to form the plurality of pores; the second continuous phase structure is located in the pores; the volume of the second continuous phase structure is smaller than the volume of the pores; the second continuous phase structure includes a plurality of second metal particles, and the plurality of second metal particles are connected; the second metal particles are connected to the first metal particles.

2. The device interconnect assembly according to claim 1, characterized in that: The particle size of the first metal particles is larger than that of the second metal particles.

3. The device interconnect assembly according to claim 2, characterized in that: The ratio of the particle size of the first metal particles to the particle size of the second metal particles is 50 to 1000.

4. The device interconnection assembly according to any one of claims 1 to 3, characterized in that: The device interconnection assembly further includes: a first metal film, wherein two opposite surfaces of the first metal film are in contact with and connected to the first device and the composite layer respectively.

5. The device interconnect assembly according to claim 4, characterized in that: The material of the first metal film is the same as that of the first metal particles.

6. The device interconnection assembly according to any one of claims 1 to 5, characterized in that: The device interconnection assembly further includes: a second metal film, wherein two opposite surfaces of the second metal film are in contact with and connected to the second device and the composite layer respectively.

7. The device interconnect assembly according to claim 6, characterized in that: The material of the second metal film is the same as that of the first metal particles.

8. The device interconnect assembly according to any one of claims 1 to 7, characterized in that: The particle size of the first metal particles is 1 μm to 10 μm.

9. The device interconnect assembly according to any one of claims 1 to 8, characterized in that: The particle size of the second metal particles is 20 nm to 200 nm.

10. The device interconnection assembly according to any one of claims 1 to 9, characterized in that: The inner diameter of the pore is 200 nm to 1 μm.

11. The device interconnect assembly according to any one of claims 1 to 10, characterized in that: The material of the first metal particles includes at least one of silver, gold, copper and platinum.

12. The device interconnect assembly according to any one of claims 1 to 11, characterized in that: The material of the second metal particles includes at least one of silver, gold, copper and platinum.

13. The device interconnect assembly according to any one of claims 1 to 12, characterized in that: The first device is a chip, and the second device is a printed circuit board.

14. The device interconnect assembly according to any one of claims 1 to 12, characterized in that: The first component is an optical element, and the second component is a bracket.

15. A method for preparing a device interconnect assembly, characterized in that: include: forming a first continuous phase structure layer on the first device; The first continuous phase structure layer comprises a plurality of pores and a plurality of first metal particles, and the plurality of first metal particles are connected to form the plurality of pores; Laminating a first prefabricated layer and a second device on the first continuous phase structure layer to form a prefabricated part; wherein the prefabricated part comprises the first device, the first continuous phase structure layer, the first prefabricated layer and the second device stacked in sequence; The preform is sintered so that the first preformed layer forms a second continuous phase structure in the pores; the second continuous phase structure includes a plurality of second metal particles, and the plurality of second metal particles are connected; the second metal particles are connected to the first metal particles.

16. The method for preparing a device interconnect assembly according to claim 15, characterized in that: The step of stacking the first prefabricated layer and the second device on the first continuous phase structure layer to form a prefabricated member comprises: forming the first prefabricated layer on the second device; The first preformed layer and the first continuous phase structure layer are laminated to form the preform.

17. The method for preparing a device interconnection assembly according to claim 15 or 16, characterized in that: The step of forming a first continuous phase structure layer on the first device comprises: forming a second prefabricated layer on the first device; the second prefabricated layer comprises a first dispersant and the second metal particles mixed with each other; The second prefabricated layer is sintered to form the first continuous phase structure layer.

18. The method for preparing a device interconnection assembly according to any one of claims 15 to 16, characterized in that: The first prefabricated layer includes a second dispersant and the second metal particles mixed with each other.

19. The method for preparing a device interconnection assembly according to any one of claims 15 to 18, characterized in that: Before the step of forming the first continuous phase structure layer on the first device, the method further comprises: forming a first metal film on the first device; The step of forming the first continuous phase structure layer on the first device includes: forming the first continuous phase structure layer on a surface of the first metal film away from the first device.

20. An electronic device, characterized in that: The electronic device comprises: a housing and a device interconnection assembly according to any one of claims 1 to 14, wherein the device interconnection assembly is located inside the housing.

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