Preparation method of Real RGB OLEDoS
By performing incision and etching of the bottom of the dielectric material layer in the Real RGB OLEDoS preparation process, multiple etching of the anode structure is avoided, the anode surface damage problem is solved, and the quality and yield of the equipment are improved.
Patent Information
- Application Number
- CN202411329968.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-24
- Publication Date
- 2024-12-20
AI Technical Summary
In the existing Real RGB OLEDoS preparation process, the anode surface is damaged by multiple etching processes, affecting the equipment efficiency and yield.
By sequentially covering the first dielectric material layer, the conductor material layer and the second dielectric material layer on the silicon-based backplane and performing bottom etching and etching, the OLED functional material layer is deposited and etched only in the non-subpixel region. and the film encapsulation layer to avoid multiple etching of the anode structure.
Reduces damage to the anode surface and improves the quality and yield of Real RGB OLEDoS.
Smart Images
Figure CN119173119A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for preparing a Real RGB OLEDoS. Background Art
[0002] The current mainstream technology for OLED-on-silicon (OLEDoS) microdisplays uses white OLED (WOLED) to generate RGB colors through a color filter (CF) to achieve full-color display. The main problems with this technology are low efficiency and severe crosstalk between sub-pixels. The Real RGB structure uses R / G / B OLEDs on corresponding sub-pixels. The specific structural diagram is shown below. Figure 1 As shown in the figure, this structure does not use CF, so its efficiency is much higher than the traditional WOLED+CF solution. In addition, the reasonable Real RGB structure can effectively reduce the crosstalk problem between sub-pixels.
[0003] One of the mainstream processes for existing Real RGB technology is photolithography patterning. This involves depositing an OLED film of a specific color across all sub-pixel areas on a CMOS backplane with an anode structure. This process is then repeated three times to remove the OLED film from sub-pixel areas other than that color, creating R, G, and B OLEDs in the corresponding sub-pixel areas and achieving full-color display. This process causes some sub-pixel anodes to undergo multiple etching processes, resulting in surface damage. Summary of the Invention
[0004] In view of this, the object of the present invention is to provide a method for preparing Real RGB OLEDoS, which can protect the anode surface in the Real RGB photolithography patterning process.
[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:
[0006] The present invention provides a method for preparing Real RGB OLEDoS, comprising the following steps:
[0007] Providing a semi-finished product, the semi-finished product comprising a silicon-based backplate 100 and an anode structure 110, a first dielectric material layer, a conductor material layer, and a second dielectric material layer sequentially covering the upper surfaces of the silicon-based backplate 100 and the anode structure 110, wherein the anode structure 110 is embedded in the upper surface of the silicon-based backplate 100;
[0008] Performing a first bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 in the first sub-pixel region, then sequentially depositing the first sub-pixel region OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 to form the first sub-pixel region, and performing a first etching on the first sub-pixel region OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 in the non-first sub-pixel region;
[0009] Performing a second bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 of the second sub-pixel region, and then sequentially performing a second deposition of the second sub-pixel region OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 to form the second sub-pixel region, and performing a second etching on the second sub-pixel region OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 other than the second sub-pixel region;
[0010] A third bottom incision is performed on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 of the third sub-pixel area. Then, a third deposition of the OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 in the first sub-pixel area is performed in sequence to form the third sub-pixel area. The OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 in the third sub-pixel area other than the third sub-pixel area are subjected to a third etching to obtain the first dielectric material layer 200, the conductor material layer 300, and the second dielectric material layer 400, thereby obtaining the Real RGB OLEDoS.
[0011] Preferably, the first dielectric material layer and the second dielectric material independently include one or more of silicon oxide, silicon nitride, silicon oxynitride and Al2O3.
[0012] Preferably, the conductor material layer material includes conductive metal oxide and / or conductive metal; the conductive metal oxide includes indium tin oxide and / or indium zinc oxide; the conductive metal includes one or more of Ag, Al, Mo, W, Cu and Au.
[0013] Preferably, the first sub-pixel area OLED functional material layer 500, the second sub-pixel area OLED functional material layer 800 and the third sub-pixel area OLED functional material layer 900 all include a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer.
[0014] Preferably, the materials of the first sub-pixel area OLED functional material layer 500 , the second sub-pixel area OLED functional material layer 800 and the third sub-pixel area OLED functional material layer 900 independently include one or more of phosphorescent materials, fluorescent materials and high-fluorescent OLED materials.
[0015] Preferably, the colors of the first sub-pixel region OLED functional material layer 500 , the second sub-pixel region OLED functional material layer 800 and the third sub-pixel region OLED functional material layer 900 are any RGB colors and are all different.
[0016] Preferably, the cathode layer 600 is a single-layer thin film or a multi-layer composite thin film, and the material of the cathode layer 600 includes one or more of Mg, Ag, Al, indium zinc oxide, and aluminum zinc oxide.
[0017] Preferably, the thin film encapsulation layer 700 is a single-layer thin film or a multi-layer composite thin film, and the material of the thin film encapsulation layer 700 includes one or more of Al2O3, TiO2, silicon oxide material, silicon nitride material and silicon oxynitride material.
[0018] Preferably, the anode structure 110 is a single-layer thin film or a multi-layer composite thin film, and the material of the anode structure 110 includes one or more of Al, Ag, TiN and indium tin oxide.
[0019] Preferably, the silicon-based backplane 100 is a bare silicon substrate, a silicon substrate containing a circuit, or a silicon substrate containing a CMOS circuit.
[0020] The present invention provides a method for preparing Real RGB OLEDoS, comprising the following steps: providing a semi-finished product, the semi-finished product comprising a silicon-based backplane 100 and an anode structure 110, a first dielectric material layer, a conductor material layer, and a second dielectric material layer sequentially covering the upper surfaces of the silicon-based backplane 100 and the anode structure 110, wherein the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100 at intervals; performing a first bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 in the first sub-pixel area, and then sequentially performing a first deposition of an OLED functional material layer 500, a cathode layer 600, and a thin film encapsulation layer 700 in the first sub-pixel area to form a first sub-pixel area, performing a first etching on the OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 in the first sub-pixel area other than the first sub-pixel area; performing a second bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer. The anode structure 110 of the second sub-pixel area is exposed, and then the second OLED functional material layer 800, the cathode layer 600 and the thin film encapsulation layer 700 of the second sub-pixel area are sequentially deposited to form the second sub-pixel area. The OLED functional material layer 800, the cathode layer 600 and the thin film encapsulation layer 700 of the second sub-pixel area other than the second sub-pixel area are subjected to a second etching. The first dielectric material layer, the conductor material layer and the second dielectric material layer are subjected to a third bottom incision to expose the anode structure 110 of the third sub-pixel area. The third OLED functional material layer 900, the cathode layer 600 and the thin film encapsulation layer 700 of the first sub-pixel area are sequentially deposited to form the third sub-pixel area. The OLED functional material layer 900, the cathode layer 600 and the thin film encapsulation layer 700 of the third sub-pixel area other than the third sub-pixel area are subjected to a third etching to obtain the first dielectric material layer 200, the conductor material layer 300 and the second dielectric material layer 400, thereby obtaining the Real RGB OLEDoS.
[0021] Compared with the prior art, the present invention has the following beneficial effects:
[0022] The present invention performs a first bottom incision, a second bottom incision, and a third bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer, respectively, and performs a first etching on the OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 in the first sub-pixel area other than the first sub-pixel area, performs a second etching on the OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 in the first sub-pixel area other than the second sub-pixel area, and performs a third etching on the OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 in the first sub-pixel area other than the third sub-pixel area, thereby exposing the anode structure 110 in different sub-pixel areas. This ensures that the sub-pixel anode undergoes only one etching process, reduces damage to the anode surface, and improves the quality and yield of Real RGB OLEDoS. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 This is a schematic diagram of the structure of Real RGB OLEDoS;
[0024] Figure 2 Schematic diagram of the process for preparing Real RGB OLEDoS using anode protection according to the present invention;
[0025] In the figure, 100 is a silicon-based backplane, 110 is an anode structure, 200 is a first dielectric material layer, 300 is a conductor material layer, 400 is a second dielectric material layer, 500 is a first sub-pixel area OLED functional material layer, 600 is a cathode layer, 700 is a thin film encapsulation layer, 800 is a second sub-pixel area OLED functional material layer, and 900 is a third sub-pixel area OLED functional material layer. DETAILED DESCRIPTION
[0026] The present invention provides a method for preparing Real RGB OLEDoS, comprising the following steps:
[0027] Providing a semi-finished product, the semi-finished product comprising a silicon-based backplate 100 and an anode structure 110, a first dielectric material layer, a conductor material layer, and a second dielectric material layer sequentially covering the upper surfaces of the silicon-based backplate 100 and the anode structure 110, wherein the anode structure 110 is embedded in the upper surface of the silicon-based backplate 100;
[0028] Performing a first bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 in the first sub-pixel region, then sequentially depositing the first sub-pixel region OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 to form the first sub-pixel region, and performing a first etching on the first sub-pixel region OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 in the non-first sub-pixel region;
[0029] Performing a second bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 of the second sub-pixel region, and then sequentially performing a second deposition of the second sub-pixel region OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 to form the second sub-pixel region, and performing a second etching on the second sub-pixel region OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 other than the second sub-pixel region;
[0030] A third bottom incision is performed on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 of the third sub-pixel area. Then, a third deposition of the OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 in the first sub-pixel area is performed in sequence to form the third sub-pixel area. The OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 in the third sub-pixel area other than the third sub-pixel area are subjected to a third etching to obtain the first dielectric material layer 200, the conductor material layer 300, and the second dielectric material layer 400, thereby obtaining the Real RGB OLEDoS.
[0031] In the present invention, the structure of the Real RGB OLEDoS preferably includes:
[0032] Silicon-based backplane 100;
[0033] Sub-pixel areas, the number of the sub-pixel areas is 3N, where N≥1, the sub-pixel areas include an anode structure 110, an OLED functional material layer, a cathode layer 600, and a thin-film encapsulation layer 700 stacked in sequence, the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100, and the sub-pixel areas are spaced apart by spacing units, and the spacing units include a first dielectric material layer 200, a conductor material layer 300, and a second dielectric material layer 400 stacked in sequence, and the first dielectric material layer 200 is arranged on the upper surface of the silicon-based backplane 100; the OLED functional material layers of the three sub-pixel areas are a first sub-pixel area OLED functional material layer 500, a second sub-pixel area OLED functional material layer 800, and a third sub-pixel area OLED functional material layer 900, and the colors of the first sub-pixel area OLED functional material layer 500, the second sub-pixel area OLED functional material layer 800, and the third sub-pixel area OLED functional material layer 900 are any of RGB colors and are different.
[0034] Figure 1 This is a structural diagram of Real RGB OLEDoS. Figure 1The structure of the Real RGB OLEDoS is described below. In the figure, 100 is a silicon-based backplane, 110 is an anode structure, 200 is a first dielectric material layer, 300 is a conductor material layer, 400 is a second dielectric material layer, 500 is a first sub-pixel area OLED functional material layer, 600 is a cathode layer, 700 is a thin film encapsulation layer, 800 is a second sub-pixel area OLED functional material layer, and 900 is a third sub-pixel area OLED functional material layer.
[0035] The Real RGB OLEDoS of the present invention includes a silicon-based backplane 100, which is preferably a bare silicon substrate or a circuit-containing silicon substrate.
[0036] In the present invention, the circuit-containing silicon substrate is preferably a CMOS circuit-containing silicon substrate.
[0037] The Real RGB OLEDoS of the present invention includes sub-pixel areas, the number of which is 3N, where N≥1. The sub-pixel areas include an anode structure 110, an OLED functional material layer, a cathode layer 600, and a thin-film encapsulation layer 700 stacked in sequence. The anode structure 110 is embedded in the upper surface of the silicon-based backplane 100 at intervals. The sub-pixel areas are spaced apart by spacer units, and the spacer units include a first dielectric material layer 200, a conductor material layer 300, and a second dielectric material layer 400 stacked in sequence. The first dielectric material layer 200 is disposed on the upper surface of the silicon-based backplane 100; the OLED functional material layers of the three sub-pixel areas are a first sub-pixel area OLED functional material layer 500, a second sub-pixel area OLED functional material layer 800, and a third sub-pixel area OLED functional material layer 900. The colors of the first sub-pixel area OLED functional material layer 500, the second sub-pixel area OLED functional material layer 800, and the third sub-pixel area OLED functional material layer 900 are any RGB colors and are different.
[0038] In the present invention, the anode structure 110 is preferably a single-layer film or a multi-layer composite film, the number of layers of the multi-layer composite film is preferably ≥3, and the material of the anode structure 110 preferably includes one or more of Al, Ag, TiN and indium tin oxide (ITO).
[0039] When the anode structure 110 is preferably a multi-layer composite film, the anode structure 110 is preferably composed of two or more materials selected from the group consisting of Al, Ag, TiN, and indium tin oxide to form the multi-layer composite film.
[0040] In the present invention, the materials of the first dielectric material layer 200 and the second dielectric material layer 400 are independently preferably silicon oxide materials (SiO x ), silicon nitride material (SiNx ), silicon oxynitride materials (SiO x N y ) and one or more of Al2O3.
[0041] In the present invention, the material of the conductor material layer 300 preferably includes conductive metal oxide and / or conductive metal; the conductive metal oxide includes indium tin oxide and / or indium zinc oxide (IZO); the conductive metal includes one or more of Ag, Al, Mo, W, Cu and Au.
[0042] In the present invention, the OLED functional material layer preferably includes, in order, a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), an emitting layer (EML), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). The present invention does not particularly limit the thickness of the hole injection layer, hole transport layer, electron injection layer, emitting layer, hole blocking layer, electron transport layer, and electron blocking layer, and any method known to those skilled in the art can be used.
[0043] In the present invention, the material of the OLED functional material layer (including the first sub-pixel region OLED functional material layer 500, the second sub-pixel region OLED functional material layer 800, and the third sub-pixel region OLED functional material layer 900) preferably includes one or more of a phosphorescent material, a fluorescent material, and a high-fluorescent OLED material. The present invention does not particularly limit the specific types of the phosphorescent material, fluorescent material, and high-fluorescent OLED material; those skilled in the art may employ any of the following methods.
[0044] In the present invention, the first sub-pixel area OLED functional material layer 500 preferably emits light in any RGB color, the second sub-pixel area OLED functional material layer 800 emits light in any RGB color other than the light-emitting color of the first sub-pixel area OLED functional material layer 500, and the third sub-pixel area OLED functional material layer 900 emits light in any RGB color other than the light-emitting color of the first sub-pixel area OLED functional material layer 500 and the light-emitting color of the second sub-pixel area OLED functional material layer 800.
[0045] In the present invention, the cathode layer 600 is preferably a single-layer film or a multi-layer composite film, the number of layers of the multi-layer composite film is preferably ≥3, and the material of the cathode layer 600 preferably includes one or more of Mg, Ag, Al, indium zinc oxide and aluminum zinc oxide (AZO).
[0046] When the cathode layer 600 is preferably a multi-layer composite film, the cathode layer 600 is preferably composed of two or more materials selected from the group consisting of Mg, Ag, Al, indium zinc oxide, and aluminum zinc oxide.
[0047] In the present invention, the thin film encapsulation layer 700 is preferably a single-layer thin film or a multi-layer composite thin film, the number of layers of the multi-layer composite thin film is preferably ≥3, and the material of the thin film encapsulation layer 700 preferably includes one or more of Al2O3, TiO2, silicon oxide material, silicon nitride material and silicon oxynitride material.
[0048] When the thin film encapsulation layer 700 is preferably a multi-layer composite thin film, the thin film encapsulation layer 700 is preferably composed of two or more materials selected from the group consisting of Al2O3, TiO2, silicon oxide, silicon nitride and silicon oxynitride.
[0049] Figure 2 The following is a schematic diagram of the preparation process of Real RGB OLEDoS of the present invention. Figure 2 The method of the present invention will be described.
[0050] The present invention provides a semi-finished product, which includes a silicon-based backplane 100 and an anode structure 110, a first dielectric material layer, a conductor material layer and a second dielectric material layer covering the upper surfaces of the silicon-based backplane 100 and the anode structure 110 in sequence, and the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100 at intervals.
[0051] The present invention preferably deposits a first dielectric material layer, a conductor material layer and a second dielectric material layer in sequence on the upper surfaces of the silicon-based backplane 100 and the anode structure 110, and the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100 to obtain the semi-finished product.
[0052] In the present invention, the anode structure 110 is preferably integrated on the silicon-based backplane 100 .
[0053] In the present invention, the first dielectric material layer is made of the same material as the first dielectric material layer 200 , the conductor material layer is made of the same material as the conductor material layer 300 , and the second dielectric material layer is made of the same material as the second dielectric material layer 400 .
[0054] After obtaining the first dielectric material layer material, the conductor material layer material, and the second dielectric material layer material, the present invention performs a first bottom undercut on the first dielectric material layer material, the conductor material layer material, and the second dielectric material layer material to expose the anode structure 110 (undercut structure) of the first sub-pixel area, and then sequentially deposits the first sub-pixel area OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 to form the first sub-pixel area, and performs a first etching on the first sub-pixel area OLED functional material layer 500, the cathode layer 600, and the thin film encapsulation layer 700 that are not the first sub-pixel area.
[0055] In the present invention, the first deposition includes deposition on the surface of the anode structure 110 and the second dielectric material layer in the first sub-pixel region.
[0056] After the first etching is completed, the present invention performs a second bottom incision on the first dielectric material layer, the conductor material layer and the second dielectric material layer to expose the anode structure 110 of the second sub-pixel area, and then sequentially deposits the second sub-pixel area OLED functional material layer 800, the cathode layer 600 and the thin film encapsulation layer 700 to form the second sub-pixel area, and performs a second etching on the second sub-pixel area OLED functional material layer 800, the cathode layer 600 and the thin film encapsulation layer 700 that are not the second sub-pixel area.
[0057] In the present invention, the second deposition includes deposition on the anode structure 110 of the second sub-pixel region, the second dielectric material layer 400 of the first sub-pixel region, and the surface of the second dielectric material layer.
[0058] After the second etching is completed, the present invention performs a third bottom incision on the first dielectric material layer, the conductor material layer, and the second dielectric material layer to expose the anode structure 110 of the third sub-pixel area, and then sequentially deposits the OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 of the first sub-pixel area to form the third sub-pixel area. The third etching is performed on the OLED functional material layer 900, the cathode layer 600, and the thin film encapsulation layer 700 of the third sub-pixel area other than the third sub-pixel area to obtain the first dielectric material layer 200, the conductor material layer 300, and the second dielectric material layer 400, thereby obtaining the RealRGB OLEDoS.
[0059] In the present invention, the third deposition includes deposition on the surfaces of the anode structure 110 in the third sub-pixel region, the second dielectric material layer 400 in the first sub-pixel region, the second dielectric material layer 400 in the second sub-pixel region, and the second dielectric material layer.
[0060] The present invention has no special limitation on the specific manners of the first bottom incision, the second bottom incision and the third bottom incision, and any manner familiar to those skilled in the art may be used, such as dry etching, wet etching or a combination of the two.
[0061] In the present invention, the deposition, first deposition, second deposition, and third deposition methods are preferably evaporation, physical vapor deposition (PVD), atomic layer deposition (ALD), or chemical vapor deposition (CVD). The present invention does not particularly limit the specific parameters of the deposition, and methods well known to those skilled in the art can be used.
[0062] The present invention has no special limitation on the methods of the first etching, the second etching and the third etching, and can adopt the photolithography etching and resist removal process familiar to those skilled in the art. The present invention has no special limitation on the specific method of the photolithography etching and resist removal process, and can adopt the method familiar to those skilled in the art, such as dry etching, wet etching or a combination of the two, more preferably dry etching.
[0063] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions of the present invention. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0064] Example 1
[0065] The structure of the prepared Real RGB OLEDoS is as follows Figure 1 As shown, the specific preparation method is as follows:
[0066] Step 1. Deposit SiO on the silicon-based backplane 100 with the anode structure 110 x , W and SiO x , the deposition methods are CVD, PVD and CVD in sequence, forming a first dielectric material layer material, a conductor material layer material and a second dielectric material layer material respectively;
[0067] Step 2. Undercut the first dielectric material layer, the conductive material layer, and the second dielectric material layer using a photolithography and resist removal process to expose the anode structure 110 of the first sub-pixel region and form a first undercut structure. The etching process is a combination of dry etching and wet etching.
[0068] Step 3. After making the first undercut structure, the OLED layer of the R pixel area (the first sub-pixel area OLED functional material layer 500), the cathode layer 600 and the thin film encapsulation layer 700 are deposited in sequence. The first sub-pixel area OLED functional material layer 500 is Mg, the cathode layer 600 is Ag, and the thin film encapsulation layer 700 is SiN. x , the deposition methods are evaporation, evaporation and CVD;
[0069] Step 4. Use photolithography and etching to remove the OLED functional material layer 500 (Mg), cathode layer 600 (Ag) and thin film encapsulation layer 700 (SiN) in the first sub-pixel area formed in Step 3 and not in the R sub-pixel area. x );
[0070] Step 5. Perform a second undercut on the first dielectric material layer, the conductive material layer, and the second dielectric material layer using a photolithography and resist removal process to expose the anode structure 110 of the second sub-pixel region and form a second undercut structure. The etching process is a combination of dry etching and wet etching.
[0071] Step 6. After making the second undercut structure, the OLED layer of the G pixel area (the second sub-pixel area OLED functional material layer 800), the cathode layer 600 and the thin film encapsulation layer 700 are deposited in sequence. The second sub-pixel area OLED functional material layer 800 is Mg, the cathode layer 600 is Ag, and the thin film encapsulation layer 700 is SiN. x , the deposition methods are evaporation, evaporation and CVD;
[0072] Step 7. Use photolithography and etching to remove the OLED functional material layer 800 (Mg), cathode layer 600 (Ag) and thin film encapsulation layer 700 (SiN) in the second sub-pixel area formed in Step 6 and not in the G sub-pixel area. x );
[0073] Step 8. Perform a third undercut on the first dielectric material layer, the conductive material layer, and the second dielectric material layer using a photolithography and resist removal process to expose the anode structure 110 of the third sub-pixel region and form a third undercut structure. The etching process is a combination of dry etching and wet etching.
[0074] Step 9. After making the third undercut structure, the OLED layer of the B pixel area (the third sub-pixel area OLED functional material layer 900), the cathode layer 600 and the thin film encapsulation layer 700 are deposited in sequence. The third sub-pixel area OLED functional material layer 900 is Mg, the cathode layer 600 is Ag, and the thin film encapsulation layer 700 is SiN. x, the deposition methods are evaporation, evaporation and CVD;
[0075] Step 10. Use photolithography and etching to remove the OLED functional material layer 900 (Mg), cathode layer 600 (Ag) and thin film encapsulation layer 700 (SiN) in the third sub-pixel area formed in Step 9 and not in the B sub-pixel area. x ) to get Real RGBOLEDoS.
[0076] The above description is merely a preferred embodiment of the present invention and does not constitute any limitation thereto. It should be noted that those skilled in the art may make various improvements and modifications without departing from the principles of the present invention, and such improvements and modifications shall also be considered within the scope of protection of the present invention.
Claims
1. A method for preparing RealRGB OLEDoS, characterized in that: The following steps are involved: Providing a semi-finished product, the semi-finished product comprising a silicon-based backplane (100) and an anode structure (110), a first dielectric material layer, a conductor material layer, and a second dielectric material layer sequentially covering the upper surfaces of the silicon-based backplane (100) and the anode structure (110), the anode structure (110) being embedded in the upper surface of the silicon-based backplane (100) at intervals; Performing a first bottom incision on the first dielectric material layer, the conductor material layer and the second dielectric material layer to expose the anode structure (110) of the first sub-pixel region, then sequentially performing a first deposition on the first sub-pixel region OLED functional material layer (500), the cathode layer (600) and the thin film encapsulation layer (700) to form the first sub-pixel region, and performing a first etching on the first sub-pixel region OLED functional material layer (500), the cathode layer (600) and the thin film encapsulation layer (700) other than the first sub-pixel region; Performing a second bottom incision on the first dielectric material layer, the conductor material layer and the second dielectric material layer to expose the anode structure (110) of the second sub-pixel region, then sequentially performing a second deposition on the second sub-pixel region OLED functional material layer (800), the cathode layer (600) and the thin film encapsulation layer (700) to form the second sub-pixel region, and performing a second etching on the second sub-pixel region OLED functional material layer (800), the cathode layer (600) and the thin film encapsulation layer (700) other than the second sub-pixel region; The first dielectric material layer, the conductor material layer and the second dielectric material layer are subjected to a third bottom incision to expose the anode structure (110) of the third sub-pixel region, and then the first sub-pixel region OLED functional material layer (900), the cathode layer (600) and the thin film encapsulation layer (700) are sequentially deposited for a third time to form the third sub-pixel region, and the third sub-pixel region OLED functional material layer (900), the cathode layer (600) and the thin film encapsulation layer (700) are subjected to a third etching to obtain the first dielectric material layer (200), the conductor material layer (300) and the second dielectric material layer (400), thereby obtaining the Real RGBOLEDoS.
2. The preparation method according to claim 1, characterized in that: The first dielectric material layer material and the second dielectric material layer material independently include one or more of silicon oxide material, silicon nitride material, silicon oxynitride material and Al2O3.
3. The preparation method according to claim 1, characterized in that: The conductor material layer material includes conductive metal oxide and / or conductive metal; the conductive metal oxide includes indium tin oxide and / or indium zinc oxide; the conductive metal includes one or more of Ag, Al, Mo, W, Cu and Au.
4. The preparation method according to claim 1, characterized in that: The first sub-pixel area OLED functional material layer (500), the second sub-pixel area OLED functional material layer (800) and the third sub-pixel area OLED functional material layer (900) all include a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer.
5. The preparation method according to claim 4, characterized in that: The materials of the first sub-pixel area OLED functional material layer (500), the second sub-pixel area OLED functional material layer (800) and the third sub-pixel area OLED functional material layer (900) independently include one or more of phosphorescent materials, fluorescent materials and high-fluorescent OLED materials.
6. The preparation method according to claim 1, characterized in that: The colors of the first sub-pixel region OLED functional material layer (500), the second sub-pixel region OLED functional material layer (800) and the third sub-pixel region OLED functional material layer (900) are any RGB colors and are all different.
7. The preparation method according to claim 1, characterized in that: The cathode layer (600) is a single-layer thin film or a multi-layer composite thin film, and the material of the cathode layer (600) includes one or more of Mg, Ag, Al, indium zinc oxide and zinc aluminum oxide.
8. The preparation method according to claim 1, characterized in that: The thin film encapsulation layer (700) is a single-layer thin film or a multi-layer composite thin film, and the material of the thin film encapsulation layer (700) includes one or more of Al2O3, TiO2, silicon oxide material, silicon nitride material and silicon oxynitride material.
9. The preparation method according to claim 1, characterized in that: The anode structure (110) is a single-layer thin film or a multi-layer composite thin film, and the material of the anode structure (110) includes one or more of Al, Ag, TiN and indium tin oxide.
10. The preparation method according to claim 1, characterized in that: The silicon-based backplane (100) is a bare silicon substrate or a circuit-containing silicon substrate.