Plasma processing apparatus and plasma processing method

Abstract

The plasma processing apparatus includes a chamber, a substrate support portion, a high-frequency power source, and a bias power source system. The substrate support part includes a central region on which a substrate can be placed, and is provided in the chamber. A high-frequency power source generates source high-frequency electrical power. The bias power supply system supplies the first and second electrical bias energies to the first and second electrodes, respectively. The first electrode is at least arranged in the central area of the substrate supporting part. The second electrode is provided in an outer region located radially outward from the center of the central region. The bias power supply system adjusts the first electrical bias energy and the second electrical bias energy such that an electric field intensity above one of the central region and the outer region is first higher than an electric field intensity above the other region.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to a plasma processing apparatus and a plasma processing method. Background Art

[0002] The plasma processing device is used for plasma processing of a substrate. The plasma processing device includes a chamber, an electrostatic chuck and a lower electrode. The electrostatic chuck and the lower electrode are arranged in the chamber. The electrostatic chuck is arranged on the lower electrode. The electrostatic chuck supports an edge ring placed thereon. The edge ring is sometimes called a focusing ring. The electrostatic chuck supports the substrate arranged in the area surrounded by the edge ring. When plasma processing is performed in the plasma processing device, gas is supplied into the chamber. In addition, high-frequency electric power is supplied to the lower electrode. Thereby, plasma is formed from the gas in the chamber. The substrate is treated with chemical species such as ions and free radicals from the plasma.

[0003] When plasma processing is performed, the edge ring is consumed and the thickness of the edge ring becomes smaller. When the thickness of the edge ring becomes smaller, the position of the upper end of the plasma sheath (hereinafter referred to as "sheath") above the edge ring becomes lower. The position of the upper end of the sheath above the edge ring in the vertical direction should be the same as the position of the upper end of the sheath above the substrate in the vertical direction. Patent document 1 listed below discloses a technology for applying a DC voltage to the edge ring in order to adjust the position of the upper end of the sheath above the edge ring in the vertical direction.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2008-227063 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] The present invention provides a technology for adjusting the distribution of plasma density in a chamber.

[0009] Technical solutions for solving technical problems

[0010] In an exemplary embodiment, a plasma processing device is provided. The plasma processing device includes a chamber, a substrate support, a high-frequency power supply, and a bias power supply system. The substrate support includes a central area on which a substrate can be placed, and is arranged in the chamber. The high-frequency power supply is configured to generate a high-frequency electric power of a generating source to generate plasma from a gas in the chamber. The bias power supply system is configured to supply a first electric bias energy to a first electrode and a second electric bias energy to a second electrode. The first electrode is at least arranged in the central area. The second electrode is arranged in an outer area radially outside the center of the central area. The bias power supply system is configured to adjust the first electric bias energy and the second electric bias energy so that the electric field strength above one of the central area and the outer area becomes higher before the electric field strength above the other area of ​​the central area and the outer area.

[0011] Effects of the Invention

[0012] According to an exemplary embodiment, a technique for adjusting the distribution of plasma density within a chamber is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0014] Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0015] Figure 3 This is a timing chart of an example related to a plasma processing apparatus according to an exemplary embodiment.

[0016] Figure 4 This is a timing chart of an example related to a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 5 This is a timing chart of an example related to a plasma processing apparatus according to an exemplary embodiment.

[0018] Figure 6 This is a timing chart of an example related to a plasma processing apparatus according to an exemplary embodiment.

[0019] Figure 7 FIG. 1 is a diagram showing a plasma processing apparatus according to another exemplary embodiment.

[0020] Figure 8 It is a diagram showing a plasma processing apparatus according to still another exemplary embodiment.

[0021] Fig. 9 It is a diagram showing a plasma processing apparatus according to still another exemplary embodiment.

[0022] Fig.10 This is an example of a timing chart related to a plasma processing apparatus according to still another exemplary embodiment.

[0023] Fig.11 is a flow chart of a plasma processing method according to an exemplary embodiment. DETAILED DESCRIPTION

[0024] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0025] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0026] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP: Capacitively Coupled Plasma), inductively coupled plasma (ICP: Inductively Coupled Plasma), ECR plasma (Electron-Cyclotron-resonance plasma: Electron Cyclotron Resonance Plasma), helicon wave plasma (HWP: Helicon Wave Plasma) or surface wave plasma (SWP: Surface Wave Plasma), etc.

[0027] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 may be configured to control the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 and acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0028] Hereinafter, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0029] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit introduces at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The substrate support unit 11 is electrically insulated from the shell of the plasma processing chamber 10.

[0030] The substrate support portion 11 includes a main body 111 and an edge ring 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the edge ring 112. A wafer is an example of a substrate W. The edge ring 112 is formed of a conductive material or an insulating material. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is arranged on the central region 111a of the main body 111, and the edge ring 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the edge ring 112.

[0031] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a constitutes the central area 111a. In one embodiment, the ceramic component 1111a also constitutes the annular area 111b. In addition, the annular area 111b may be constituted by other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component. In this case, the edge ring 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component.

[0032] In addition, the substrate support portion 11 may also include a temperature regulating module configured to adjust at least one of the electrostatic chuck 1111, the edge ring 112 and the substrate to a target temperature. The temperature regulating module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may also include a heat transfer gas supply portion configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0033] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction unit may also include one or more side gas injection units (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0034] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the gas source 21 corresponding thereto to the shower head 13 via the flow controller 22 corresponding thereto. Each flow controller 22 may also include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsing the flow of at least one processing gas.

[0035] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can also include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0036] The power supply system 30 includes a high frequency power supply 300 and a bias power supply system 310. The high frequency power supply 300 constitutes the plasma generating unit 12 of one embodiment. The high frequency power supply 300 is configured to generate a generation source high frequency electric power RF. The generation source high frequency electric power RF has a generation source frequency f RF That is, the generating source high frequency electric power RF has a frequency of the generating source frequency f RF The source frequency f RF The frequency may be in the range of 10 MHz to 150 MHz. The high frequency power supply 300 is configured to be electrically connected to the high frequency electrode via a matching device 300m, and can supply the high frequency electric power RF of the generating source to the high frequency electrode. The high frequency electrode may also be disposed in the substrate support portion 11. The high frequency electrode may also be at least one electrode disposed in a conductive component of the base 1110 or in a ceramic component 1111a. Alternatively, the high frequency electrode may also be an upper electrode. When the high frequency electric power RF of the generating source is supplied to the high frequency electrode, plasma is generated from the gas in the chamber 10.

[0037] The matching box 300m has a variable impedance. The variable impedance of the matching box 33 is set so as to reduce the reflection of the generated high-frequency electric power RF from the load. The matching box 33 can be controlled by the control unit 2, for example.

[0038] The bias power supply system 310 is configured to supply a first electrical bias energy BE1 to the first electrode and a second electrical bias energy BE2 to the second electrode. The bias power supply system 310 includes an output of the first electrical bias energy BE1 and an output of the second electrical bias energy BE2. The output of the first electrical bias energy BE1 is electrically connected to the first electrode, and the output of the second electrical bias energy BE2 is electrically connected to the second electrode. In one embodiment, the bias power supply system 310 may include a first power supply 311 that generates the first electrical bias energy BE1 and a second power supply 312 that generates the second electrical bias energy BE2.

[0039] The first electrode is disposed at least in the central region 111a. In one embodiment, the first electrode is an electrode 1111c. The electrode 1111c is disposed in the electrostatic chuck 1111 in the central region 111a. The electrode 1111c may be a film formed of a conductive material.

[0040] The second electrode is disposed in the outer region. The outer region is located radially outward relative to the central region 111a. Here, the radial direction is a radiation direction relative to the center (central axis) of the central region 111a. In one embodiment, the second electrode is an electrode 1111e. The electrode 1111e is disposed within the electrostatic chuck 1111 in the annular region 111b. Therefore, in one embodiment, the outer region is an annular region 111b on which the edge ring 112 can be placed. The electrode 1111e can be a film formed of a conductive material. The electrode 1111e extends in the circumferential direction. Here, the circumferential direction is a rotation direction relative to the central axis of the central region 111a. The electrode 1111e can also have an annular shape, for example.

[0041] The following, with Figure 2 Refer to Figure 3 to Figure 6 . Figure 3 to Figure 6 1 and 2 are timing diagrams of an example related to a plasma processing apparatus according to an exemplary embodiment. Figure 3 to Figure 6 As shown, the first electrical bias energy BE1 and the second electrical bias energy BE2 each have a waveform period CY and are supplied periodically. The waveform period CY is determined by the bias frequency. The bias frequency is lower than the source frequency, for example, a frequency of 50 kHz or more and 27 MHz or less. The time length of the waveform period CY is the inverse of the bias frequency.

[0042] like Figure 3As shown, the first electric bias energy BE1 and the second electric bias energy BE2 may each be bias high frequency electric power having a bias frequency. That is, the first electric bias energy BE1 and the second electric bias energy BE2 may each have a sinusoidal waveform whose frequency is the bias frequency. In this case, the output of the first electric bias energy BE1 in the bias power supply system 310 is electrically connected to the first electrode via a matcher 311m. The variable impedance of the matcher 311m is set to reduce the reflection of the first electric bias energy BE1 from the load. In addition, the output of the second electric bias energy BE2 in the bias power supply system 310 is electrically connected to the second electrode via a matcher 312m. The variable impedance of the matcher 312m is set to reduce the reflection of the second electric bias energy BE2 from the load.

[0043] Or, if Figures 4 to 6 As shown, the first electric bias energy BE1 and the second electric bias energy BE2 may each include a voltage pulse. The voltage pulse is generated within the waveform period CY. The waveform of the voltage pulse may be a rectangular wave, a triangular wave or an arbitrary waveform. The voltage pulse may be a negative voltage pulse or a negative DC voltage pulse. The voltage pulse of the first electric bias energy BE1 is periodically applied to the first electrode at a time interval equal to the time length of the waveform period CY. The voltage pulse of the second electric bias energy BE2 is periodically applied to the second electrode at a time interval equal to the time length of the waveform period CY. In addition, in the case where the first electric bias energy BE1 and the second electric bias energy BE2 are each a voltage pulse, the plasma processing device 1 may also not include the matcher 311m and the matcher 312m.

[0044] like Figure 3 to Figure 6 As shown, the high-frequency power supply 300 supplies the generating source high-frequency electric power RF to the high-frequency electrode in the first period P1. The high-frequency power supply 300 stops supplying the generating source high-frequency electric power RF in the second period P2, or supplies the generating source high-frequency electric power RF having a different power level from the power level of the generating source high-frequency electric power RF in the first period P1 (for example, a power level lower than the power level of the generating source high-frequency electric power RF in the first period P1) to the high-frequency electrode. The first period P1 and the second period P2 appear alternately. The high-frequency power supply 300 determines the first period P1 and the second period P2 according to the pulse control signal provided from the control circuit 320. In addition, the power level of the generating source high-frequency electric power RF may be changed in each of the first period P1 and the second period P2.

[0045] The bias power system 310 periodically supplies the first electrical bias energy BE1 to the first electrode during the ON period P11. The bias power system 310 stops supplying the first electrical bias energy BE1 during the OFF period P12. The ON period P11 and the OFF period P12 appear alternately. The cycle consisting of the ON period P11 and the OFF period P12 has the same time length as the cycle consisting of the first period P1 and the second period P2. The bias power system 310 determines the ON period P11 and the OFF period P12 according to the pulse control signal provided from the control circuit 320.

[0046] The bias power system 310 periodically supplies the second electrical bias energy BE2 to the second electrode during the on period P21. The bias power system 310 stops supplying the second electrical bias energy BE2 during the off period P22. The on period P21 and the off period P22 appear alternately. The cycle consisting of the on period P21 and the off period P22 has the same time length as the cycle consisting of the first period P1 and the second period P2. The bias power system 310 determines the on period P21 and the off period P22 according to the pulse control signal provided from the control circuit 320.

[0047] The bias power supply system 310 is configured to make the phase of the first electric bias energy BE1 in the on period P11 consistent with the phase of the second electric bias energy BE2 in the on period P21. The bias power supply system 310 determines the on period P11 and the on period P21 based on the two pulse signals, thereby making the phase of the first electric bias energy BE1 consistent with the phase of the second electric bias energy BE2.

[0048] In addition, when the first electrical bias energy BE1 is bias high frequency electric power, the control circuit 320 uses the voltage measurement value of the sensor 311s to generate the pulse control signal. The sensor 311s measures the voltage in the power supply path for the first electrical bias energy BE1 connected between the matching device 311m and the first electrode. The potential in the first electrode varies with the same period as the waveform period CY. Therefore, the phase of the period of the potential variation in the first electrode corresponding to the first electrical bias energy BE1 is determined based on the voltage measurement value of the sensor 311s.

[0049] In addition, when the second electrical bias energy BE2 is bias high frequency electric power, the control circuit 320 uses the voltage measurement value of the sensor 312s to generate the pulse control signal. The sensor 312s measures the voltage in the power supply path for the second electrical bias energy BE2 connected between the matching unit 312m and the second electrode. The potential in the second electrode varies with the same period as the waveform period CY. Therefore, the phase of the period of the potential variation in the second electrode corresponding to the second electrical bias energy BE2 is determined based on the voltage measurement value of the sensor 312s.

[0050] The control circuit 320 generates the two pulse control signals based on the voltage measurement values ​​of the sensors 311s and 312s, thereby making the phase of the first electrical bias energy BE1 in the on period P11 consistent with the phase of the second electrical bias energy BE2 in the on period P21.

[0051] The bias power supply system 310 adjusts the first electric bias energy BE1 and the second electric bias energy BE2 so that the electric field intensity above one of the central region 111a and the outer region becomes higher before the electric field intensity above the other region. The density of plasma tends to become higher in the region where the electric field intensity becomes higher first. Therefore, in the plasma processing device 1, the density of plasma above one region is relatively higher than the density of plasma in another region. Based on this principle, the plasma processing device 1 can adjust the distribution of plasma density in the radial direction of the chamber. For example, the plasma processing device 1 can adjust the distribution of plasma density so that the distribution of plasma density in the radial direction of the chamber 10 is uniform.

[0052] In one embodiment, if Figure 3 and Figure 4 As shown, the bias power supply system 310 can make the supply start timing of the first electrical bias energy BE1 earlier than the supply start timing of the second electrical bias energy BE2. The supply start timing of the first electrical bias energy BE1 is the start timing of the opening period P11, and the supply start timing of the second electrical bias energy BE2 is the start timing of the opening period P21.

[0053] Alternatively, the bias power supply system 310 may start supplying the second electrical bias energy BE2 earlier than starting supplying the first electrical bias energy BE1 .

[0054] That is, the bias power supply system 310 can start supplying one of the first electric bias energy BE1 and the second electric bias energy BE2 earlier than the other electric bias energy, so that the electric field intensity above the region supplied with one electric bias energy becomes higher before the electric field intensity above the other region.

[0055] In another embodiment, the first electrical bias energy BE1 and the second electrical bias energy BE2 may each include the above-mentioned voltage pulse. In this case, the bias power supply system 310 may adjust the voltage level at the start of supply of the voltage pulse of one of the first electrical bias energy BE1 and the second electrical bias energy BE2. The bias power supply system 310 may set the voltage level at the start of supply of the voltage pulse of one electrical bias energy to a voltage level different from the voltage level of the voltage pulse of one electrical bias energy after the start of supply.

[0056] The bias power supply system 310 can change the voltage level of the voltage pulse of the first electrical bias energy BE1 in the start period P11. For example, the voltage level at the start of supply of the voltage pulse of the first electrical bias energy BE1 in the start period P11 can be set to a voltage level different from the voltage level of the voltage pulse in the stable state after the start of supply in the start period P11. When the voltage level at the start of supply of the voltage pulse of the first electrical bias energy BE1 is high, the density of the plasma above the central region 111a becomes relatively high. When the voltage level at the start of supply of the voltage pulse of the first electrical bias energy BE1 is low, the density of the plasma above the central region 111a becomes relatively low.

[0057] In addition, the bias power supply system 310 may also change the voltage level of the voltage pulse of the second electrical bias energy BE2 in the start period P21. For example, the voltage level at the start of supply of the voltage pulse of the second electrical bias energy BE2 in the start period P21 may be set to a voltage level different from the voltage level of the voltage pulse in the stable state after the start of supply in the start period P21. When the voltage level at the start of supply of the voltage pulse of the second electrical bias energy BE2 is high, the density of the plasma above the outer region becomes relatively high. When the voltage level at the start of supply of the voltage pulse of the second electrical bias energy BE2 is low, the density of the plasma above the outer region becomes relatively low.

[0058] In addition, if Figure 5 As shown, the bias power system 310 may also step up the voltage level (absolute value) of the voltage pulse of the first electrical bias energy BE1 to a stable voltage level during the start-up period P11. In addition, the bias power system 310 may also step up the voltage level (absolute value) of the voltage pulse of the second electrical bias energy BE2 to a stable voltage level during the start-up period P21. In addition, the bias power system 310 may also make the start-up period P21 precede the start-up period P11. Alternatively, the bias power system 310 may also make the start-up period P11 precede the start-up period P21.

[0059] In another embodiment, the first electric bias energy BE1 and the second electric bias energy BE2 may each be bias high frequency electric power. In this case, the bias power system 310 may change the electric power level of one of the first electric bias energy BE1 and the second electric bias energy BE2. Specifically, the bias power system 310 may set the electric power level at the start of supply of one electric bias energy to a different level from the electric power level of one electric bias energy after the start of supply.

[0060] The bias power system 310 can change the electric power level of the first electric bias energy BE1 in the start period P11. For example, the electric power level at the start of supply in the start period P11 of the first electric bias energy BE1 can be set to an electric power level different from the electric power level of the first electric bias energy BE1 in the stable state after the start of supply in the start period P11. When the electric power level at the start of supply of the first electric bias energy BE1 is high, the density of the plasma above the central region 111a becomes relatively high. When the electric power level at the start of supply of the first electric bias energy BE1 is low, the density of the plasma above the central region 111a becomes relatively low.

[0061] In addition, the bias power system 310 may also change the electric power level of the second electric bias energy BE2 during the on period P21. For example, the electric power level at the start of supply during the on period P21 of the second electric bias energy BE2 may be set to a different electric power level from the electric power level of the second electric bias energy BE2 during the stable state after the start of supply. When the electric power level at the start of supply of the second electric bias energy BE2 is high, the density of the plasma above the outer region becomes relatively high. When the electric power level at the start of supply of the second electric bias energy BE2 is low, the density of the plasma above the outer region becomes relatively low.

[0062] Furthermore, the bias power system 310 can increase the power level of the first electrical bias energy BE1 stepwise to a stable power level during the start period P11. Furthermore, the bias power system 310 can increase the power level of the second electrical bias energy BE2 stepwise to a stable power level during the start period P21. In addition, the bias power system 310 can also make the start period P21 precede the start period P11. Alternatively, the bias power system 310 can also make the start period P11 precede the start period P21.

[0063] In another embodiment, the first electrical bias energy BE1 and the second electrical bias energy BE2 may each include the above-mentioned voltage pulse. In this case, the bias power supply system 310 may change the duty ratio of the voltage of one of the first electrical bias energy BE1 and the second electrical bias energy BE2. The duty ratio is the proportion of the period during which the voltage pulse is supplied in the waveform period CY. Specifically, the bias power supply system 310 may set the duty ratio at the start of supply of one electrical bias energy to a value different from the duty ratio of one electrical bias energy after the start of supply.

[0064] The bias power supply system 310 can change the duty ratio of the voltage pulse of the first electrical bias energy BE1 in the on period P11. For example, the duty ratio of the voltage pulse of the first electrical bias energy BE1 at the start of supply in the on period P11 can be set to a value different from the duty ratio of the voltage pulse at the stable state after the start of supply in the on period P11. When the duty ratio of the voltage pulse of the first electrical bias energy BE1 is high, the density of the plasma above the central region 111a becomes relatively high. When the duty ratio of the voltage pulse of the first electrical bias energy BE1 is low, the density of the plasma above the central region 111a becomes relatively low.

[0065] In addition, the bias power supply system 310 may also change the duty ratio of the voltage pulse of the second electrical bias energy BE2 in the on period P21. For example, the duty ratio of the voltage pulse of the second electrical bias energy BE2 at the start of supply in the on period P21 may be set to a value different from the duty ratio of the voltage pulse at the stable state after the start of supply in the on period P21. When the duty ratio of the voltage pulse of the second electrical bias energy BE2 is high, the density of the plasma above the outer region becomes relatively high. When the duty ratio of the voltage pulse of the second electrical bias energy BE2 is low, the density of the plasma above the outer region becomes relatively low.

[0066] In addition, if Figure 6 As shown, the bias power system 310 may also increase the duty cycle of the voltage pulse of the first electrical bias energy BE1 in a stepwise manner to a stable voltage level during the start-up period P11. Alternatively, or in addition, the bias power system 310 may also increase the duty cycle of the voltage pulse of the second electrical bias energy BE2 in a stepwise manner to a stable voltage level during the start-up period P21. Figure 6 As shown, the bias power system 310 may also make the turn-on period P11 precede the turn-on period P21. Alternatively, the bias power system 310 may also make the turn-on period P21 precede the turn-on period P11.

[0067] In addition, Figure 3 to Figure 6In any one of the above, the supply start timing of the generating source high-frequency electric power RF is earlier than the supply start timing of each of the first electric bias energy BE1 and the second electric bias energy BE2. That is, the first period P1 is earlier than the turn-on period P11 and the turn-on period P21. However, the supply start timing of the generating source high-frequency electric power RF may be earlier than the supply start timing of one or both of the first electric bias energy BE1 and the second electric bias energy BE2, or later than the supply start timing of one or both of the first electric bias energy BE1 and the second electric bias energy BE2. That is, the first period P1 may be earlier than one or both of the turn-on period P11 and the turn-on period P21, or later than one or both of the turn-on period P11 and the turn-on period P21. In addition, the supply start timing of the generating source high-frequency electric power RF may have a time difference of less than five waveform cycles CY relative to the supply start timing of one or both of the first electric bias energy BE1 and the second electric bias energy BE2. That is, the start timing of the first period P1 may have a time difference of less than five waveform cycles CY relative to the start timing of one or both of the opening period P11 and the opening period P21. The supply start timing of the generated source high-frequency electric power RF may have a time difference of more than 1 / 100 or more than 1 / 50 of the waveform cycle CY relative to the supply start timing of one or both of the first electric bias energy BE1 and the second electric bias energy BE2.

[0068] Alternatively, the supply start timing of the generated high frequency electric power RF may coincide with the supply start timing of one or both of the first electric bias energy BE1 and the second electric bias energy BE2. That is, the start timing of the first period P1 may coincide with the start timing of one or both of the opening period P11 and the opening period P21.

[0069] In one embodiment, the supply start timing of one of the first electric bias energy BE1 and the second electric bias energy BE2 may have a time difference with respect to the supply start timing of the other electric bias energy. For example, the supply start timing of one electric bias energy may have a time difference of less than five waveform cycles CY with respect to the supply start timing of the other electric bias energy. That is, the start timing of one of the opening periods P11 and the opening period P21 may also have a time difference of less than five waveform cycles CY with respect to the start timing of the other opening period.

[0070] In one embodiment, the control circuit 320 may also generate the pulse control signal to set the supply start timing of the first electric bias energy BE1, the second electric bias energy BE2, and the generation source high frequency electric power RF to the corresponding supply time specified by the control unit 2. In this case, the control unit 2 controls the control circuit 320 to set the supply start timing of the first electric bias energy BE1, the second electric bias energy BE2, and the generation source high frequency electric power RF to the supply start timing determined based on the past processing results or the light emission intensity in the chamber 10, or the supply start timing registered in the database of the control unit 2. The supply start timing of the first electric bias energy BE1, the second electric bias energy BE2, and the generation source high frequency electric power RF is determined, for example, so that the distribution of the density of the plasma in the chamber 10 is uniform.

[0071] The luminous intensity in the chamber 10 is obtained by one or more luminescence spectrometers 50. The plasma processing device 1 may also include a single luminescence spectrometer 50 or more luminescence spectrometers that measure the luminous intensity of the plasma at multiple locations along the radial direction in the chamber 10. The control unit 2 determines the distribution of the luminous intensity of the plasma in the chamber 10 based on the luminous intensity obtained by the one or more luminescence spectrometers 50. The control unit 2 determines each of the supply start timings of the first electric bias energy BE1, the second electric bias energy BE2, and the generation source high-frequency electric power RF so that the distribution of the determined luminous intensity is uniform. In addition, the control unit 2 may also determine the supply start timings of the first electric bias energy BE1, the second electric bias energy BE2, and the generation source high-frequency electric power RF based on the bias currents flowing through the first electrode and the second electrode, respectively, or the potential changes of several components in the chamber 10.

[0072] Below, refer to Figure 7 . Figure 7 FIG. 1 is a diagram showing another exemplary embodiment of a plasma processing apparatus. Figure 7 The plasma processing apparatus 1B shown will be described from the viewpoint of differences from the plasma processing apparatus 1 .

[0073] The plasma processing device 1B further includes an outer peripheral portion 114 and an outer ring 115. The outer peripheral portion 114 has a substantially cylindrical shape and extends along the outer periphery of the substrate support portion 11. The outer peripheral portion 114 is formed of an insulating material such as quartz. The outer ring 115 is disposed on the outer peripheral portion 114. The outer ring 115 has a substantially annular shape. The outer ring 115 is formed of the same material as the edge ring 112. The plasma processing device 1B further includes an electrode 1111o. The electrode 1111o is disposed below the outer ring 115 and in the outer peripheral portion 114. In addition, the plasma processing device 1B does not include an electrode 1111e.

[0074] In the plasma processing apparatus 1B, the outer ring 115 constitutes the outer peripheral region. Therefore, in the plasma processing apparatus 1B, the outer peripheral region is a region located radially outside the annular region 111b. In addition, in the plasma processing apparatus 1B, the electrode 1111o constitutes the second electrode. Therefore, in the plasma processing apparatus 1B, the output of the bias power supply system 310 for the second electrical bias energy BE2 is electrically connected to the electrode 1111o. The other structures of the plasma processing apparatus 1B are the same as the corresponding structures of the plasma processing apparatus 1.

[0075] Below, refer to Figure 8 . Figure 8 FIG. 1 is a diagram showing a plasma processing apparatus according to another exemplary embodiment. Figure 8 The plasma processing apparatus 1C shown in FIG. 1 is described from the perspective of the differences between the plasma processing apparatus 1C and the plasma processing apparatus 1B. In the plasma processing apparatus 1C, the electrode 1111c is provided over the central region 111a and the annular region 111b in the electrostatic chuck 1111. The other structures of the plasma processing apparatus 1C are the same as the corresponding structures of the plasma processing apparatus 1B.

[0076] Below, refer to Fig. 9 and Fig.10 . Fig. 9 It is a diagram showing a plasma processing apparatus according to still another exemplary embodiment. Fig.10 FIG. 1 is a timing chart of an example of a plasma processing apparatus according to another exemplary embodiment. Fig. 9 The plasma processing apparatus 1D will be described from the viewpoint of differences between the plasma processing apparatus 1D and the plasma processing apparatus 1B.

[0077] The plasma processing apparatus 1D further includes an electrode 1111e as a third electrode. The electrode 1111e is provided in the electrostatic chuck 1111 in the annular region 111b similarly to the electrode 1111e of the plasma processing apparatus 1.

[0078] In the plasma processing apparatus 1D, the bias power system 310 further has an output for third electrical bias energy BE3. The third electrical bias energy BE3 has a waveform period CY similar to the first electrical bias energy BE1 and is periodically supplied to the electrode 1111e. The third electrical bias energy BE3 can be generated by a third power supply 313.

[0079] The third electrical bias energy BE3 may be bias high frequency electric power similarly to the first electrical bias energy BE1. When the third electrical bias energy BE3 is bias high frequency electric power, the output for the third electrical bias energy BE3 in the bias power supply system 310 is electrically connected to the electrode 1111e via the matching device 313m.

[0080] Alternatively, the third electrical bias energy BE3 may be similar to the first electrical bias energy BE1. Fig.10 The voltage pulse of the third electrical bias energy BE3 is periodically applied to the electrode 1111e at a time interval equal to the time length of the waveform period CY. When the third electrical bias energy BE3 includes a voltage pulse, the plasma processing apparatus 1D may not include the matching unit 313m.

[0081] The third electric bias energy BE3 is periodically supplied to the electrode 1111e during the on-period P31. The phase of the third electric bias energy BE3 during the on-period P31 is synchronized with the phase of the first electric bias energy BE1 during the on-period P11 and the phase of the second electric bias energy BE2 during the on-period P21. The supply of the third electric bias energy BE3 to the electrode 1111e is stopped during the off-period P32. The on-period P31 and the off-period P32 appear alternately. The cycle composed of the on-period P31 and the off-period P32 has the same time length as the cycle composed of the first period P1 and the second period P2. In addition, as Fig.10 As shown, the on period P31 can be synchronized with the on period P11 , and the off period P32 can be synchronized with the off period P12 .

[0082] The bias power system 310 determines the on period P31 and the off period P32 according to the pulse control signal provided by the control circuit 320. The control circuit 320 may also generate the pulse control signal using the voltage measurement value of the sensor 313s. The sensor 313s measures the voltage in the supply path for the third electrical bias energy BE3 connected between the matcher 313m and the electrode 1111e.

[0083] The level of the third electric bias energy BE3 (the electric power level of the bias high frequency electric power or the voltage level of the voltage pulse) is set to set the traveling direction of the ions to be perpendicular to the edge of the substrate W. When the third electric bias energy BE3 is supplied to the electrode 1111e, the thickness of the sheath (plasma sheath) on the edge ring 112 is adjusted for the third electrode. Thus, the traveling direction of the ions to be perpendicular to the edge of the substrate W can be corrected. In addition, the other structures of the plasma processing apparatus 1D are the same as the corresponding structures of the plasma processing apparatus 1B.

[0084] Below, refer to Fig.11, a plasma processing method according to an exemplary embodiment is described. Fig.11 is a flow chart of a plasma processing method according to an exemplary embodiment. Fig.11 The illustrated plasma processing method (hereinafter referred to as "method MT") can be performed using the plasma processing apparatus 1. The method MT includes a step STa, a step STb, and a step STc.

[0085] In step STa, the high-frequency electric power RF of the generating source is supplied to the high-frequency electrode in order to generate plasma in the chamber 10. The high-frequency electric power RF of the generating source is supplied in the first period P1 as described above. In the second period P2 alternating with the first period P1, the supply of the high-frequency electric power RF is stopped. Alternatively, in the second period P2, the high-frequency electric power RF of the generating source having a power level lower than the power level of the high-frequency electric power RF of the generating source in the first period P1 is supplied.

[0086] In step STb, the first electrical bias energy BE1 is supplied to the first electrode. The first electrode is, for example, the electrode 1111c. As described above, the first electrical bias energy BE1 is periodically supplied to the first electrode during the on period P11. The supply of the first electrical bias energy BE1 is stopped during the off period P12.

[0087] In step STc, the second electrical bias energy BE2 is supplied to the second electrode. The second electrode is the electrode 1111e or the electrode 1111o. As described above, the second electrical bias energy BE2 is periodically supplied to the second electrode during the on period P21. The supply of the second electrical bias energy BE2 is stopped during the off period P22.

[0088] In method MT, the first electric bias energy BE1 and the second electric bias energy BE2 are adjusted so that the electric field intensity above one of the central region 111 a and the outer region becomes higher before the electric field intensity above the other region.

[0089] In one embodiment, as described above, the supply start timing of one of the first electric bias energy BE1 and the second electric bias energy BE2 may be earlier than the supply start timing of the other electric bias energy, so that the electric field intensity above the area supplied with one electric bias energy becomes higher before the electric field intensity above the other area.

[0090] In another embodiment, as described above, the voltage level of a voltage pulse of one of the first electrical bias energy BE1 and the second electrical bias energy BE2 may be changed. Specifically, the voltage level at the start of supply of a voltage pulse of an electrical bias energy may be set to a voltage level different from the voltage level of a voltage pulse of an electrical bias energy after the start of supply.

[0091] In another embodiment, as described above, the power level of one of the first electric bias energy BE1 and the second electric bias energy BE2 may be changed. Specifically, the power level at the start of supply of one electric bias energy may be set to a different level from the power level of one electric bias energy after the start of supply.

[0092] In another embodiment, as described above, the duty ratio of one of the first electrical bias energy BE1 and the second electrical bias energy BE2 may be changed. Specifically, the duty ratio at the start of supply of one electrical bias energy may be set to a value different from the duty ratio of one electrical bias energy after the start of supply.

[0093] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different embodiments may be combined to form other embodiments.

[0094] For example, the first electrode may be an electrode different from the electrode 1111 c . For example, the first electrode may be a conductive member of the base 1110 .

[0095] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E19].

[0096] [E1]

[0097] A plasma processing device, comprising:

[0098] Chamber;

[0099] a substrate support disposed in the chamber, the substrate support including a central region on which a substrate can be placed;

[0100] a high frequency power supply configured to generate a generation source high frequency electric power to generate plasma from a gas in the chamber; and

[0101] a bias power supply system for supplying a first electrical bias energy to a first electrode at least disposed in the central region and a second electrical bias energy to a second electrode disposed in an outer region radially outward relative to a center of the central region,

[0102] The bias power supply system is configured to adjust the first electrical bias energy and the second electrical bias energy so that the electric field intensity above one of the central region and the outer region becomes higher than the electric field intensity above the other of the central region and the outer region.

[0103] The density of plasma tends to be higher in the region where the electric field intensity becomes higher first. In the above embodiment, the electric field intensity above one of the central region and the outer region becomes higher first than the electric field intensity above the other of the central region and the outer region. Therefore, according to the above embodiment, the distribution of the plasma density in the radial direction in the chamber can be adjusted.

[0104] [E2]

[0105] The plasma processing apparatus according to [E1], wherein:

[0106] The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period, or having a waveform period and including periodically generated voltage pulses,

[0107] The bias power supply system is configured to enable a timing of starting supply of one of the first electrical bias energy and the second electrical bias energy to precede a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

[0108] [E3]

[0109] The plasma processing apparatus according to [E1], wherein:

[0110] The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period.

[0111] The bias power supply system is configured to be able to set an electric power level at the start of supply of one of the first electric bias energy and the second electric bias energy to a level different from an electric power level of the one electric bias energy after the start of supply.

[0112] [E4]

[0113] The plasma processing apparatus according to [E1], wherein:

[0114] The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically.

[0115] The bias power supply system is configured to set a voltage level at the start of supply of the voltage pulse of one of the first electrical bias energy and the second electrical bias energy to a voltage level different from a voltage level of the voltage pulse of the one electrical bias energy after the start of supply.

[0116] [E5]

[0117] The plasma processing apparatus according to [E1], wherein:

[0118] The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically.

[0119] The bias power supply system is configured to be able to set a duty ratio at the start of supply of one of the first electrical bias energy and the second electrical bias energy to a value different from a duty ratio of the one electrical bias energy after the start of supply.

[0120] [E6]

[0121] The plasma processing apparatus according to any one of [E1] to [E5], wherein:

[0122] The high frequency power supply is configured to start supplying the generation source high frequency electric power before or after supplying one or both of the first electrical bias energy and the second electrical bias energy.

[0123] [E7]

[0124] The plasma processing apparatus according to any one of [E2] to [E5], wherein:

[0125] The supply start timing of the generation source high frequency electric power has a time difference of not more than five of the waveform cycles with respect to the supply start timing of one or both of the first electrical bias energy and the second electrical bias energy.

[0126] [E8]

[0127] The plasma processing apparatus according to any one of [E1] to [E5], wherein:

[0128] The high-frequency power supply is configured to match a timing of starting supply of the generation-source high-frequency electric power with a timing of starting supply of one or both of the first electrical bias energy and the second electrical bias energy.

[0129] [E9]

[0130] The plasma processing apparatus according to any one of [E2] to [E5], wherein:

[0131] A timing of starting supply of one of the first electrical bias energy and the second electrical bias energy has a time difference of less than five of the waveform cycles relative to a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

[0132] [E10]

[0133] The plasma processing apparatus according to any one of [E1] to [E6], wherein:

[0134] The bias power supply system is configured to match a phase of the first electrical bias energy with a phase of the second electrical bias energy.

[0135] [E11]

[0136] The plasma processing apparatus according to any one of [E1] to [E10], wherein:

[0137] The supply start timing of each of the first electrical bias energy, the second electrical bias energy and the generated source high frequency electric power can be set to a supply start timing determined based on past processing results or the light emission intensity in the chamber, or a supply start timing registered in a database.

[0138] [E12]

[0139] The plasma processing apparatus as described in any one of [E1] to [E11], wherein the outer region is a region on which an edge ring can be placed.

[0140] [E13]

[0141] The plasma processing apparatus as described in any one of [E1] to [E11], wherein

[0142] The outer region is a region located outside in the radial direction relative to the annular region on which the edge ring can be placed.

[0143] [E14]

[0144] A plasma treatment method, comprising:

[0145] The step of supplying high frequency electric power to a generation source to generate plasma in a chamber of a plasma processing device;

[0146] A step of supplying a first electrical bias energy to a first electrode of a substrate support, the substrate support being disposed in the chamber and including a central region on which a substrate can be placed, the first electrode being disposed at least in the central region; and

[0147] a step of supplying a second electrical bias energy to a second electrode provided in an outer region radially outward relative to the center of the central region,

[0148] The first electrical bias energy and the second electrical bias energy are adjusted so that the electric field intensity above one of the central region and the outer region becomes higher before the electric field intensity above the other of the central region and the outer region.

[0149] [E15]

[0150] The plasma treatment method according to [E14], wherein

[0151] The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period, or having a waveform period and including periodically generated voltage pulses,

[0152] A timing of starting supply of one of the first electrical bias energy and the second electrical bias energy is earlier than a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

[0153] [E16]

[0154] The plasma treatment method according to [E14], wherein

[0155] The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period.

[0156] The electric power level at the start of supply of one of the first electric bias energy and the second electric bias energy is set to a level different from the electric power level of the one electric bias energy after the start of supply.

[0157] [E17]

[0158] The plasma treatment method according to [E14], wherein

[0159] The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically.

[0160] A voltage level at the start of supply of the voltage pulse of one of the first electrical bias energy and the second electrical bias energy is set to a voltage level different from a voltage level of the voltage pulse of the one electrical bias energy after the start of supply.

[0161] [E18]

[0162] The plasma treatment method according to [E14], wherein

[0163] The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically.

[0164] A duty ratio at the start of supply of one of the first electrical bias energy and the second electrical bias energy is set to a value different from a duty ratio of the one electrical bias energy after the start of supply.

[0165] [E19]

[0166] A plasma processing device, comprising:

[0167] Chamber;

[0168] a substrate support disposed in the chamber, the substrate support including a central region on which a substrate can be placed;

[0169] a high frequency power source configured to generate a generation source high frequency electric power to generate plasma from the gas in the chamber;

[0170] A first electrode disposed in the central area;

[0171] a second electrode provided in an outer region located radially outward relative to the center of the central region; and

[0172] a bias power supply system configured to supply a first electrical bias energy to the first electrode and a second electrical bias energy to the second electrode,

[0173] The bias power supply system is configured to enable the timing of starting supply of one of the first electrical bias energy and the second electrical bias energy to precede the timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

[0174] The high-frequency power supply is configured to start supplying the generation-source high-frequency electric power at a timing earlier than start supplying the first electrical bias energy and the second electrical bias energy.

[0175] According to the above description, it should be understood that various embodiments of the present invention are described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limited, and the true scope and spirit are given by the scope of the invention.

[0176] Description of Reference Numerals

[0177] 1... plasma processing device, 10... chamber, 11... substrate support portion, 300... high frequency power supply, 310... bias power supply system, RF... generating source high frequency electric power, BE1... first electric bias energy, BE2... second electric bias energy.

Claims

1. A plasma processing device, It is characterized in that include: Chamber; a substrate support disposed within the chamber, the substrate support including a central region on which a substrate can be placed; a high frequency power source configured to generate a generation source high frequency electric power to generate plasma from a gas in the chamber; and a bias power supply system configured to supply a first electrical bias energy to a first electrode at least provided in the central region, and to supply a second electrical bias energy to a second electrode provided in an outer region radially outward from a center of the central region, The bias power supply system is configured to adjust the first electrical bias energy and the second electrical bias energy so that the electric field intensity above one of the central region and the outer region becomes higher before the electric field intensity above the other of the central region and the outer region.

2. The plasma processing device according to claim 1, Features: The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period, or having a waveform period and including periodically generated voltage pulses, The bias power supply system is configured to enable a timing of starting supply of one of the first electrical bias energy and the second electrical bias energy to precede a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

3. The plasma processing device according to claim 1, Features: The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period, The bias power supply system is configured to be able to set an electric power level at the start of supply of one of the first electric bias energy and the second electric bias energy to a level different from an electric power level of the one electric bias energy after the start of supply.

4. The plasma processing apparatus according to claim 1, Features: The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically, The bias power supply system is configured to be capable of setting a voltage level at the start of supply of the voltage pulse of one of the first electrical bias energy and the second electrical bias energy to a voltage level different from a voltage level of the voltage pulse of the one electrical bias energy after the start of supply.

5. The plasma processing apparatus according to claim 1, Features: The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically, The bias power supply system is configured to be able to set a duty ratio at the start of supply of one of the first electrical bias energy and the second electrical bias energy to a value different from a duty ratio of the one electrical bias energy after the start of supply.

6. The plasma processing device according to any one of claims 1 to 5, Features: The high-frequency power supply is configured to start supplying the generation-source high-frequency electric power before or after start supplying one or both of the first electrical bias energy and the second electrical bias energy.

7. The plasma processing device according to any one of claims 2 to 5, Features: The supply start timing of the generation source high-frequency electric power has a time difference of less than five of the waveform cycles with respect to the supply start timing of one or both of the first electrical bias energy and the second electrical bias energy.

8. The plasma processing device according to any one of claims 1 to 5, Features: The high-frequency power supply is configured to match a timing of starting supply of the generation source high-frequency electric power with a timing of starting supply of one or both of the first electrical bias energy and the second electrical bias energy.

9. The plasma processing device according to any one of claims 2 to 5, Features: A timing of starting supply of one of the first electrical bias energy and the second electrical bias energy has a time difference of less than five of the waveform cycles relative to a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

10. The plasma processing device according to any one of claims 1 to 5, Features: The bias power supply system is configured to match a phase of the first electrical bias energy with a phase of the second electrical bias energy.

11. The plasma processing device according to any one of claims 1 to 5, Features: The supply start timing of each of the first electrical bias energy, the second electrical bias energy and the generated source high frequency electric power can be set to a supply start timing determined based on past processing results or the light emission intensity in the chamber, or a supply start timing registered in a database.

12. The plasma processing device according to any one of claims 1 to 5, Features: The outer area is an area on which the edge ring can be placed.

13. The plasma processing device according to any one of claims 1 to 5, Features: The outer region is a region located outside in the radial direction relative to the annular region on which the edge ring can be placed.

14. A plasma treatment method, It is characterized in that include: The step of supplying high frequency electric power to a generation source to generate plasma in a chamber of a plasma processing device; The step of supplying a first electrical bias energy to a first electrode of a substrate support, the substrate support being disposed in the chamber and including a central region on which a substrate can be placed, the first electrode being disposed at least in the central region; and a step of supplying a second electrical bias energy to a second electrode provided in an outer region radially outward relative to the center of the central region, The first electric bias energy and the second electric bias energy are adjusted so that the electric field intensity above one of the central region and the outer region becomes higher before the electric field intensity above the other of the central region and the outer region.

15. The plasma processing method according to claim 14, Features: The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period, or having a waveform period and including periodically generated voltage pulses, A timing of starting supply of one of the first electrical bias energy and the second electrical bias energy is earlier than a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy.

16. The plasma processing method according to claim 14, Features: The first electrical bias energy and the second electrical bias energy are each bias high-frequency electric power having a waveform period, An electric power level at which supply of one of the first electric bias energy and the second electric bias energy is started is set to a level different from an electric power level of the one electric bias energy after the supply is started.

17. The plasma processing method according to claim 14, Features: The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically, A voltage level at which supply of the voltage pulse of one of the first electrical bias energy and the second electrical bias energy starts is set to a voltage level different from a voltage level of the voltage pulse of the one electrical bias energy after the supply starts.

18. The plasma processing method according to claim 14, Features: The first electrical bias energy and the second electrical bias energy each have a waveform period and include voltage pulses generated periodically, A duty ratio at the start of supply of one of the first electrical bias energy and the second electrical bias energy is set to a value different from a duty ratio of the one electrical bias energy after the start of supply.

19. A plasma processing device, It is characterized in that include: Chamber; a substrate support disposed within the chamber, the substrate support including a central region on which a substrate can be placed; a high frequency power source configured to generate a generation source high frequency electric power to generate plasma from a gas in the chamber; A first electrode disposed in the central area; a second electrode disposed in an outer region located radially outward relative to the center of the central region; and a bias power supply system configured to supply a first electrical bias energy to the first electrode and a second electrical bias energy to the second electrode, The bias power supply system is configured to enable a timing of starting supply of one of the first electrical bias energy and the second electrical bias energy to precede a timing of starting supply of the other of the first electrical bias energy and the second electrical bias energy. The high-frequency power supply is configured to start supplying the generation source high-frequency electric power at a timing earlier than start supplying the first electrical bias energy and the second electrical bias energy.

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