VCSEL Chip Relaxation Oscillation Frequency Estimation Method, Device, Equipment, Medium and Program Product

Abstract

The present application relates to a method, device, equipment, medium and program product for estimating the relaxation oscillation frequency of a VCSEL chip. The method includes: obtaining RIN test data of the VCSEL chip; obtaining a frequency response curve graph based on a data point set representing the RIN intensity at each frequency in the RIN test data; the horizontal axis of the frequency response curve graph represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude; performing a differential processing on the frequency response curve graph to obtain a first derivative curve graph; taking the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip. By using this method, the theoretical relaxation oscillation frequency of the VCSEL chip can be determined by using the existing RIN test data of the VCSEL chip, and the data utilization rate in the VCSEL chip test process can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of chip testing, and in particular, to a method, device, equipment, medium, and program product for predicting the relaxation oscillation frequency of a VCSEL chip. Background Art

[0002] A vertical cavity surface emitting laser (VCSEL) is a semiconductor laser widely used in the field of optical communication. Due to its complex manufacturing process and working principle, VCSEL usually requires a large number of performance test items during the production process, including RIN test, S-parameter test, etc. These performance test items are crucial for ensuring the performance and quality of VCSEL.

[0003] With the rapid development of the optical communication field, higher requirements for the production efficiency of VCSEL have been put forward in the market. However, currently, during the production process of VCSEL, the existing test data of VCSEL cannot be effectively utilized during the testing of VCSEL, resulting in the need for comprehensive performance testing for each VCSEL chip. Furthermore, this will lead to a very cumbersome testing process for VCSEL and consume a large amount of time and labor costs. Obviously, the existing production method that cannot effectively utilize the existing test data of VCSEL is not conducive to improving the production efficiency of VCSEL during large-scale production. Summary of the Invention

[0004] Based on this, in view of the above technical problems, it is necessary to provide a method, device, computer equipment, computer-readable storage medium, and computer program product for predicting the relaxation oscillation frequency of a VCSEL chip, which can improve the testing efficiency of VCSEL chips.

[0005] In a first aspect, the present application provides a method for predicting the relaxation oscillation frequency of a VCSEL chip, including:

[0006] Obtaining the RIN test data of the VCSEL chip;

[0007] Based on the data point set representing the RIN intensity at each frequency in the RIN test data, obtaining a frequency response curve graph; the horizontal axis of the frequency response curve graph represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude;

[0008] Performing a differentiation process on the frequency response curve graph to obtain a first derivative curve graph;

[0009] Taking the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0010] In a second aspect, the present application further provides a device for predicting the relaxation oscillation frequency of a VCSEL chip, including:

[0011] An acquisition module, configured to acquire the RIN test data of the VCSEL chip;

[0012] A response module, configured to obtain a frequency response curve based on the data point set representing the RIN intensity at each frequency in the RIN test data; the horizontal axis of the frequency response curve represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude;

[0013] A differentiation module, configured to perform a differentiation process on the frequency response curve to obtain a first derivative curve;

[0014] An estimation module, configured to use the frequency corresponding to the zero point in the first derivative curve as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0015] In a third aspect, the present application further provides a computer device. The computer device includes a memory and a processor, the memory stores a computer program, and when the processor executes the computer program, it implements some or all of the steps described in any method of the first aspect of the embodiments of the present application.

[0016] In a fourth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, it implements some or all of the steps described in any method of the first aspect of the embodiments of the present application.

[0017] In a fifth aspect, the present application further provides a computer program product. The computer program product includes a computer program, and when the computer program is executed by a processor, it implements some or all of the steps described in any method of the first aspect of the embodiments of the present application.

[0018] For the above-mentioned method, device, computer device, computer-readable storage medium, and computer program product for predicting the relaxation oscillation frequency of a VCSEL chip, the RIN test data of the VCSEL chip is acquired; a frequency response curve is obtained based on the data point set representing the RIN intensity at each frequency in the RIN test data; the horizontal axis of the frequency response curve represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude; the frequency response curve is differentiated to obtain a first derivative curve; the frequency corresponding to the zero point in the first derivative curve is used as the theoretical relaxation oscillation frequency of the VCSEL chip. By using the method for predicting the relaxation oscillation frequency of a VCSEL chip provided by the present application, the theoretical relaxation oscillation frequency of the VCSEL chip can be determined by using the existing RIN test data of the VCSEL chip, improving the data utilization rate in the VCSEL chip test process, and thus improving the test efficiency of the VCSEL chip. Brief Description of the Drawings

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the following will briefly introduce the drawings required for the description of the embodiments of the present application or the related art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0020] Figure 1 It is an application environment diagram of the relaxation oscillation frequency prediction method for a VCSEL chip in an embodiment;

[0021] Figure 2 It is a flowchart of the relaxation oscillation frequency prediction method for a VCSEL chip in an embodiment;

[0022] Figure 3 It is a curve diagram of the initial response curve before filtering and the frequency response curve after filtering in an embodiment;

[0023] Figure 4 It is a curve diagram of the first derivative curve obtained in an embodiment;

[0024] Figure 5 It is a structural block diagram of the relaxation oscillation frequency prediction device for a VCSEL chip in an embodiment;

[0025] Figure 6 It is an internal structure diagram of a computer device in an embodiment;

[0026] Figure 7 It is an internal structure diagram of a computer device in another embodiment. Detailed Embodiments

[0027] In order to make the objectives, technical solutions and advantages of the present application clearer, the following further details the present application in conjunction with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0028] The relaxation oscillation frequency prediction method for a VCSEL chip provided by the embodiments of the present application can be applied to an application environment as shown in Figure 1 Among them, the terminal 102 communicates with the measurement device 104 through the network. The data storage system can store the data that the measurement device 104 needs to process. The data storage system can be integrated on the measurement device 104, or placed in the cloud or other network servers. Among them, the terminal 102 can be, but is not limited to, various personal computers, laptop computers, smart phones and tablet computers.

[0029] In an exemplary embodiment, as Figure 2 shown, a method for predicting the relaxation oscillation frequency of a VCSEL chip is provided. Taking the case where this method is applied to Figure 1 a terminal as an example, it includes the following steps 202 to 208. Among them:

[0030] Step 202, obtain the RIN test data of the VCSEL chip.

[0031] Among them, the full English name of RIN is Relative Intensity Noise, that is, relative intensity noise. The RIN test data refers to a set of test data used to characterize the optical intensity fluctuation characteristics in the test of a laser or other light source. The RIN test data is usually in decibels per hertz (dB / Hz), indicating the amplitude of the optical intensity fluctuation at a specific frequency.

[0032] Specifically, an optical detector is used to obtain the optical signal output by the VCSEL and convert the optical signal into an electrical signal, and the electrical signal is input into a measuring device so that the measuring device outputs the RIN test data of the VCSEL chip based on preset test conditions, and the terminal obtains the RIN test of the VCSEL chip output by the measuring device.

[0033] Optionally, the measuring device can be ANRITSU MS2728C or other devices capable of outputting the RIN test data of the VCSEL chip; the preset test conditions can include the test environment, the test frequency range, and the test current. The test environment can be a normal temperature and pressure environment, the test frequency range can be 10 MHz to 40 GHz, and the test current can be 6 - 11 mA.

[0034] Step 204, based on the data point set representing the RIN intensity at each frequency in the RIN test data, obtain a frequency response curve graph; the horizontal axis of the frequency response curve graph represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude.

[0035] Among them, the data point set in the RIN test data includes multiple data points representing the corresponding relationship between the frequency magnitude and the RIN intensity magnitude within a certain frequency range, and the frequency range corresponding to the data point set is determined by the test frequency range corresponding when obtaining the RIN test data.

[0036] Optionally, the unit of the frequency magnitude represented by the horizontal axis of the frequency response curve graph is GHz; the unit of the RIN intensity magnitude represented by the vertical axis of the frequency response curve graph is dB / Hz.

[0037] Optionally, a frequency response curve graph can be obtained based on a programming language with graph plotting capabilities and a set of data points representing the RIN intensity at each frequency in the RIN test data. Optionally, the programming language with graph plotting capabilities can be MATLAB, PYTHON, or other programming languages.

[0038] Step 206: Differentiate the frequency response curve graph to obtain a first derivative curve graph.

[0039] Among them, the first derivative curve graph is used to intuitively display the rate of change of the RIN intensity with frequency. Understandably, the amount of data in the first derivative curve graph is reduced compared to the frequency response curve graph because in the first derivative curve graph, only the rate of change of the RIN intensity needs to be concerned, and no longer the absolute value of the RIN intensity.

[0040] Optionally, the frequency response curve graph can be differentiated based on MATLAB, PYTHON, or other programming languages to obtain a first derivative curve graph.

[0041] Step 208: Take the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0042] Among them, the theoretical relaxation oscillation frequency is unique in the first derivative curve graph. Since the first derivative curve graph is obtained based on the RIN test data, it can also be understood that the theoretical relaxation oscillation frequency is unique in the RIN test data, that is to say, only one unique theoretical relaxation oscillation frequency can be determined based on the RIN test data.

[0043] Specifically, since the first derivative curve graph represents the rate of change of the RIN intensity with frequency, understandably, the zero point in the first derivative curve graph can represent the peak value of the RIN intensity within a local frequency range. Usually, the VCSEL chip also corresponds to a peak value of the RIN intensity at the relaxation oscillation frequency. Therefore, the frequency corresponding to the zero point in the first derivative curve graph can be determined as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0044] In the above method for estimating the relaxation oscillation frequency of a VCSEL chip, RIN test data of the VCSEL chip is obtained; based on the data point set representing the RIN intensity at each frequency in the RIN test data, a frequency response curve graph is obtained; the horizontal axis of the frequency response curve graph represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude; the frequency response curve graph is differentiated to obtain a first derivative curve graph; the frequency corresponding to the zero point in the first derivative curve graph is used as the theoretical relaxation oscillation frequency of the VCSEL chip. By using the method for estimating the relaxation oscillation frequency of a VCSEL chip provided in this application, the theoretical relaxation oscillation frequency of the VCSEL chip can be determined by utilizing the existing RIN test data of the VCSEL chip, improving the data utilization rate in the VCSEL chip testing process, and thus improving the VCSEL chip testing efficiency.

[0045] In an exemplary embodiment, the above method further includes:

[0046] Obtaining the measured relaxation oscillation frequency of the VCSEL chip;

[0047] Determining the matching result between the theoretical relaxation oscillation frequency and the measured relaxation oscillation frequency;

[0048] When the matching result meets the preset matching condition, the S-parameter test of the VCSEL chip is not performed.

[0049] Among them, the measured relaxation oscillation frequency is the known relaxation oscillation frequency of the VCSEL chip, that is to say, the VCSEL chip in the embodiment of this application has a known measured relaxation oscillation frequency.

[0050] Optionally, the measured relaxation oscillation frequency of the VCSEL chip can be obtained through methods such as optical intensity modulation and phase noise measurement, or can be provided by the manufacturer of the VCSEL chip, as long as it is not obtained through the first derivative curve graph. The embodiment of this application does not make any restrictions here.

[0051] Optionally, the matching result between the theoretical relaxation oscillation frequency and the measured relaxation oscillation frequency can be the error range between the theoretical relaxation oscillation frequency and the measured relaxation oscillation frequency. Based on this, further optionally, the preset matching condition can be that the error range corresponding to the matching result is within the preset error range.

[0052] The S-parameter test, also known as the scattering parameter test, is a general test method for evaluating the performance of radio frequency and microwave devices. One purpose of the S-parameter test is to extract the relaxation oscillation frequency of the VCSEL chip. Therefore, if an accurate theoretical relaxation oscillation frequency can be extracted through the RIN test data of the VCSEL chip, the S-parameter test of the VCSEL chip can be omitted, thus significantly improving the VCSEL chip testing efficiency.

[0053] In this embodiment, the RIN test data of the VCSEL chip and the measured relaxation oscillation frequency known in advance are obtained. After obtaining the theoretical relaxation oscillation frequency from the RIN test data, the theoretical relaxation oscillation frequency is matched with the measured relaxation oscillation frequency. Thus, when the matching result meets the preset matching condition, it is determined that the theoretical relaxation oscillation frequency obtained from the existing RIN test data has accuracy and credibility. Therefore, the VCSEL chip does not need to perform the subsequent S-parameter test step that can be used to extract the relaxation oscillation frequency, that is, the S-parameter test is not performed on the VCSEL chip. It can be seen that this embodiment improves the data utilization rate in the VCSEL chip test process, and further improves the test efficiency of the VCSEL chip.

[0054] In an exemplary embodiment, obtaining the frequency response curve graph based on the data point set representing the RIN intensity at each frequency in the RIN test data includes:

[0055] Obtaining an initial response curve graph based on the data point set representing the RIN intensity at each frequency in the RIN test data;

[0056] Performing denoising processing on at least one data point included in the data point set in the initial response curve graph to obtain the frequency response curve graph.

[0057] Among them, the initial response curve graph is a curve graph that has not been denoised and is drawn based on the data point set representing the RIN intensity at each frequency in the RIN test data.

[0058] Specifically, since the frequency response curve graph is obtained by denoising the initial response curve graph, the curve smoothness of the frequency response curve graph is greater than that of the initial response curve graph.

[0059] Optionally, performing denoising processing on at least one data point included in the data point set in the initial response curve graph may be performing denoising processing on the peak data points included in the data point set in the initial response curve graph to obtain the frequency response curve graph; or performing differential processing on the initial response curve graph, and then performing denoising processing on the peak data points included in the data point set in the initial response curve graph after the differential processing to obtain the frequency response curve graph.

[0060] In this embodiment, based on the data point set representing the RIN intensity at each frequency in the RIN test data, an initial response curve graph is obtained. Then, at least one data point included in the data point set in the initial response curve graph is denoised to obtain a frequency response curve graph. Thus, the data point set in the frequency response curve graph can better reflect the data characteristics of the RIN test data. At the same time, the data quality of the frequency response curve graph can be improved to make the subsequent obtained theoretical relaxation oscillation frequency more accurate and reliable.

[0061] In an exemplary embodiment, the above-mentioned denoising at least one data point included in the data point set in the initial response curve graph to obtain a frequency response curve graph includes:

[0062] Based on a Gaussian filter, at least one data point included in the data point set in the initial response curve graph is denoised to obtain a first intermediate response curve graph;

[0063] Perform a first-order differentiation on the first intermediate response curve graph to obtain a second intermediate response curve graph;

[0064] Cut off at least one extreme value data point in the data point set of the second intermediate response curve graph to obtain a frequency response curve graph.

[0065] Optionally, the window size of the Gaussian filter can be set to 5 and the threshold size can be set to 3.

[0066] In an exemplary embodiment, the above-mentioned cutting off at least one extreme value data point in the data point set of the second intermediate response curve graph to obtain a frequency response curve graph includes: Based on MATLAB or Python, cut off at least one extreme value data point in the data point set of the second intermediate response curve graph to obtain a frequency response curve graph.

[0067] In an exemplary embodiment, the above-mentioned cutting off at least one extreme value data point in the data point set of the second intermediate response curve graph to obtain a frequency response curve graph includes: Cut off at least one extreme value data point in the data point set of the second intermediate response curve graph, and integrate the second intermediate response curve graph after cutting off at least one extreme value data point to obtain a frequency response curve graph.

[0068] Exemplarily, assuming that the frequency range is from 0 to 40 GHz and the RIN intensity range is from -15 to 15 dB / Hz, the horizontal axis represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude. As Figure 3 shown, the blue curve and the orange curve are respectively the initial response curve graph before filtering and the frequency response curve graph after filtering. It can be seen that the curve smoothness of the frequency response curve graph after filtering is significantly greater than that of the initial response curve graph before filtering.

[0069] In this embodiment, in the process of denoising at least one data point included in the data point set in the initial response curve graph, first, at least one data point included in the data point set in the initial response curve graph is denoised based on a Gaussian filter, and then the first intermediate response curve graph obtained after the Gaussian denoising process is subjected to a first-order differentiation, and at least one extreme value data point in the data point set in the second intermediate response curve graph obtained after the first-order differentiation is truncated to obtain a frequency response curve graph. Thus, through two-step denoising processing, the data point set in the frequency response curve graph can better reflect the data characteristics of the RIN test data. At the same time, by improving the data quality of the frequency response curve graph, the theoretically obtained relaxation oscillation frequency can be further made more accurate and reliable.

[0070] In an exemplary embodiment, the above-mentioned taking the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip includes:

[0071] Determine a first target frequency range according to the bandwidth of the VCSEL chip;

[0072] Within the first target frequency range, determine the zero point in the first derivative curve graph;

[0073] Determine the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0074] Among them, usually, since the relaxation oscillation frequency of the VCSEL chip is near the bandwidth frequency, therefore, the first target frequency range can be determined according to the magnitude of the bandwidth frequency of the VCSEL chip.

[0075] There is a data point set corresponding in the first derivative curve graph, and the data point set corresponding in the first derivative curve graph includes data points representing the corresponding relationship between the frequency magnitude and the RIN intensity change rate within the same frequency range as the frequency response curve.

[0076] Exemplarily, the first target frequency range can be a frequency range including the bandwidth frequency of the VCSEL chip; optionally, the first target frequency range is within the first preset number of units of the bandwidth frequency of the VCSEL chip, that is to say, the first target frequency range = the bandwidth frequency of the VCSEL chip ± the first preset number of units.

[0077] Exemplarily, the first preset value may be 10 or other values. Accordingly, the first target frequency range may be the bandwidth frequency of the VCSEL chip ± 10 GHz. Further exemplarily, assuming that the bandwidth frequency of the VCSEL chip is 25 and the unit is GHz, then the first target frequency range at this time is 25 GHz ± 10 GHz, that is to say, the first target frequency range may be from 15 to 35 GHz.

[0078] In an exemplary embodiment, the first target frequency range is within ± 10 GHz of the bandwidth of the VCSEL chip.

[0079] In an exemplary embodiment, the above method further includes:

[0080] Determine whether the number of zeros determined within the first target frequency range is unique;

[0081] In response to the number of zeros within the first target frequency range being unique, the frequency corresponding to the zero in the first derivative curve graph is used as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0082] In an exemplary embodiment, the above method further includes:

[0083] In response to the number of zeros within the first target frequency range not being unique, determine whether the determined zeros meet the preset zero conditions;

[0084] The frequency corresponding to the zero that meets the preset zero conditions in the first derivative curve graph is used as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0085] Among them, the preset zero conditions should ensure that the determined theoretical relaxation oscillation frequency is unique in the RIN test data. Optionally, the preset zero conditions may mean that the frequency corresponding to the zero is within a specified frequency range, or it may mean that the zero is the only zero within the specified frequency range.

[0086] In an exemplary embodiment, the preset zero condition is that the RIN intensity change rate within a certain frequency range to the left of the zero is greater than 0, and the RIN intensity change rate within a certain frequency range to the right of the zero is less than 0.

[0087] Among them, it is easy to understand that since the first derivative curve graph corresponds to the frequency response curve graph, and the vertical axis of the frequency response curve graph represents the RIN intensity, the vertical axis of the first derivative curve graph represents the RIN intensity change rate.

[0088] Specifically, the preset zero-point condition is that the change rate of the RIN intensity within a certain frequency range to the left of the zero point is greater than 0, and the change rate of the RIN intensity within a certain frequency range to the right of the zero point is less than 0, indicating that the frequency representing the zero point corresponds to the maximum value of the RIN intensity within a certain frequency range to the left of the zero point and within a certain frequency range to the right of the zero point.

[0089] Optionally, the certain frequency range is within the second preset number of units of the frequency corresponding to the zero point that meets the preset zero-point condition, that is to say, the certain frequency range = the zero point that meets the preset zero-point condition ± the second preset number of units.

[0090] Exemplarily, the second preset number can be 5 or other values. Thus, the certain frequency range can be the frequency corresponding to the zero point that meets the preset zero-point condition ± 5 GHz; further exemplarily, when the size of the frequency corresponding to the zero point that meets the preset zero-point condition is 20 GHz, then the certain frequency range to the left of the zero point is 15 - 20 GHz, and the certain frequency range to the right of the zero point is 20 - 25 GHz.

[0091] In an exemplary embodiment, the above-mentioned certain frequency range is within ± 5 GHz of the frequency corresponding to the zero point.

[0092] In an exemplary embodiment, the above-mentioned preset zero-point condition indicates that there is only one zero point that meets the preset zero-point condition within the first target frequency range.

[0093] Specifically, the size of the certain frequency range can be obtained by testing multiple VCSEL chips in advance. The size of the certain frequency range should meet the condition that the zero point that meets the preset zero-point condition is unique, that is to say, there cannot be multiple zero points that meet the preset zero-point condition within the first target frequency range.

[0094] Exemplarily, for Figure 3 the filtered frequency response curve shown in the figure, after performing differential processing, the obtained first derivative curve is as Figure 4 shown. Assuming that the range of the change rate of the RIN intensity size after differential processing is from -0.08 to 0.06, and the frequency size range is still from 0 to 40 GHz, the horizontal axis represents the frequency size and the vertical axis represents the change rate size of the RIN intensity size. Assuming that the first target frequency range is from 15 to 35 GHz, then from Figure 4As can be seen, within the first target frequency range corresponding to the red box, there is a zero point at a frequency of 20 GHz, and there is only this one zero point within the first target frequency range. At the same time, the preset zero point condition is that the change rate of the RIN intensity within the -5 GHz frequency range to the left of the zero point is greater than 0, and the change rate of the RIN intensity within the +5 GHz frequency range to the right of the zero point is less than 0. That is to say, the change rate of the RIN intensity is greater than 0 from 15 to 20 GHz and less than 0 from 20 to 25 GHz. Therefore, the zero point at a frequency of 20 GHz meets the preset zero point condition. Thus, the theoretical relaxation oscillation frequency of the VCSEL chip is estimated to be 20 GHz.

[0095] In this embodiment, by setting the preset zero point condition, the situation where there are multiple zero points within the first target frequency range, which may lead to the inability to specifically determine the theoretical relaxation oscillation frequency of the VCSEL chip, is avoided. Moreover, by emphasizing the preset zero point condition for the change rate of the specific RIN intensity, it actually also indicates that the RIN intensity corresponding to the zero point meeting the preset zero point condition has a maximum peak within a certain frequency range to the left of the zero point and within a certain frequency range to the right of the zero point. Thus, the zero point meeting the preset zero point condition determined from the data points concentrated in the first derivative curve graph can determine the theoretical relaxation oscillation frequency with accuracy and credibility.

[0096] The application process of the above method for estimating the relaxation oscillation frequency of the VCSEL chip is elaborated below in combination with a detailed embodiment, as follows:

[0097] (1) Process of obtaining VCSEL chip data

[0098] The terminal obtains the RIN test data and the measured relaxation oscillation frequency of the VCSEL chip.

[0099] (2) Process of obtaining the frequency response curve graph

[0100] The terminal obtains the initial response curve graph based on the data point set representing the RIN intensity at each frequency in the RIN test data; performs noise reduction processing on at least one data point included in the data point set in the initial response curve graph based on a Gaussian filter to obtain the first intermediate response curve graph; performs first-order differentiation on the first intermediate response curve graph to obtain the second intermediate response curve graph; truncates at least one extreme value data point in the data point set in the second intermediate response curve graph to obtain the frequency response curve graph; the horizontal axis of the frequency response curve graph represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude.

[0101] (3) Process of obtaining the first derivative curve graph

[0102] The terminal performs differential processing on the frequency response curve graph to obtain the first derivative curve graph.

[0103] (4)Determination process of theoretical relaxation oscillation frequency

[0104] The terminal determines a first target frequency range according to the bandwidth of the VCSEL chip; determines whether the number of zeros determined within the first target frequency range is unique; in response to the number of zeros within the first target frequency range being unique, takes the frequency corresponding to the zero in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip; in response to the number of zeros within the first target frequency range not being unique, determines whether each determined zero meets a preset zero condition; takes the frequency corresponding to the zero that meets the preset zero condition in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip; specifically, the preset zero condition is that the rate of change of the RIN intensity within the -5 GHz frequency range to the left of the zero is greater than 0, and the rate of change of the RIN intensity within the +5 GHz frequency range to the right of the zero is less than 0.

[0105] (5)Determination process of S-parameter test results

[0106] The terminal determines the matching result between the theoretical relaxation oscillation frequency and the measured relaxation oscillation frequency; in the case where the matching result meets the preset matching condition, does not perform an S-parameter test on the VCSEL chip.

[0107] In this embodiment, by obtaining the existing data of the VCSEL chip: RIN test data and measured relaxation oscillation frequency, thereby, through denoising processing and differential processing of the RIN test data, a first derivative curve graph representing the rate of change of the RIN intensity with frequency is obtained. In the first target frequency range including the frequency range near the bandwidth frequency of the VCSEL chip, a zero of the RIN intensity with no other zeros in the frequency range near the corresponding frequency and having the maximum peak at the corresponding frequency is further determined as the theoretical relaxation oscillation frequency of the VCSEL chip. It can be seen that in this embodiment, through the existing RIN test data of the VCSEL chip, thereby, the theoretical relaxation oscillation frequency located near the VCSEL bandwidth frequency and corresponding to the maximum RIN intensity is determined. Furthermore, by matching the theoretical relaxation oscillation frequency with the existing measured relaxation oscillation frequency of the VCSEL, in the case where the matching result meets the preset matching condition, it can be shown that the determined theoretical relaxation oscillation frequency has accuracy and credibility. Therefore, it is possible to avoid subsequent S-parameter tests that can also be used to determine the relaxation oscillation frequency of the VCSEL chip. Based on this, the test efficiency of the VCSEL chip is significantly improved, and the test cost of the VCSEL chip is greatly saved.

[0108] It should be understood that although the steps in the flowcharts involved in the above-described embodiments are sequentially shown according to the indications of the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless there is a clear indication in this article, there is no strict order limit for the execution of these steps, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same moment, but can be executed at different moments. The execution order of these steps or stages is not necessarily sequential, but can be executed alternately or in turn with at least a part of other steps or steps or stages in other steps.

[0109] Based on the same inventive concept, an embodiment of the present application further provides a VCSEL chip relaxation oscillation frequency estimation device for implementing the above-mentioned VCSEL chip relaxation oscillation frequency estimation method. The implementation solution provided by this device to solve the problem is similar to the implementation solution described in the above method. Therefore, the specific limitations in one or more embodiments of the VCSEL chip relaxation oscillation frequency estimation device provided below can refer to the limitations on the VCSEL chip relaxation oscillation frequency estimation method in the above text, and will not be repeated here.

[0110] In an exemplary embodiment, as Figure 5 shown, a VCSEL chip relaxation oscillation frequency estimation device is provided, including: an acquisition module 502, a response module 504, a differential module 506, and an estimation module 508, where:

[0111] The acquisition module 502 is used to acquire RIN test data of the VCSEL chip.

[0112] The response module 504 is used to obtain a frequency response curve based on the data point set representing the RIN intensity at each frequency in the RIN test data; the horizontal axis of the frequency response curve represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude.

[0113] The differential module 506 is used to perform differential processing on the frequency response curve to obtain a first derivative curve.

[0114] The estimation module 508 is used to use the frequency corresponding to the zero point in the first derivative curve as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0115] In an exemplary embodiment, the above acquisition module 502 is further used to acquire the measured relaxation oscillation frequency of the VCSEL chip; determine the matching result between the theoretical relaxation oscillation frequency and the measured relaxation oscillation frequency; and if the matching result meets the preset matching condition, then the VCSEL chip is not subjected to S-parameter testing.

[0116] In an exemplary embodiment, the above-mentioned response module 504 is further configured to obtain an initial response curve graph based on a data point set representing the RIN intensity at each frequency in the RIN test data; perform denoising processing on at least one data point included in the data point set in the initial response curve graph to obtain a frequency response curve graph.

[0117] In an exemplary embodiment, the above-mentioned response module 504 is further configured to perform denoising processing on at least one data point included in the data point set in the initial response curve graph based on a Gaussian filter to obtain a first intermediate response curve graph; perform a first-order differentiation on the intermediate response curve graph to obtain a second intermediate response curve graph; cut off at least one extreme value data point in the data point set in the second intermediate response curve graph to obtain a frequency response curve graph.

[0118] In an exemplary embodiment, the above-mentioned estimation module 508 is further configured to determine a first target frequency range according to the bandwidth of the VCSEL chip; within the first target frequency range, determine the zero points in the first derivative curve graph; determine the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0119] In an exemplary embodiment, the above-mentioned first target frequency range is within ±10 GHz of the bandwidth of the VCSEL chip.

[0120] In an exemplary embodiment, the above-mentioned estimation module 508 is further configured to determine whether the number of zero points determined within the first target frequency range is unique; in response to the number of zero points within the first target frequency range being unique, use the frequency corresponding to the zero point in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0121] In an exemplary embodiment, the above-mentioned estimation module 508 is further configured to, in response to the number of zero points within the first target frequency range not being unique, determine whether the determined zero points meet a preset zero point condition; use the frequency corresponding to the zero point that meets the preset zero point condition in the first derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

[0122] In an exemplary embodiment, the above-mentioned preset zero point condition is that the rate of change of the RIN intensity within a certain frequency range to the left of the zero point is greater than 0, and the rate of change of the RIN intensity within a certain frequency range to the right of the zero point is less than 0.

[0123] In an exemplary embodiment, the above-mentioned certain frequency range is within ±5 GHz of the frequency corresponding to the zero point.

[0124] Each module in the above VCSEL chip relaxation oscillation frequency estimation device can be implemented in whole or in part by software, hardware, and their combination. Each of the above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0125] In an exemplary embodiment, a computer device is provided. The computer device can be a server, and its internal structure diagram can be as Figure 6 shown. The computer device includes a processor, a memory, an input / output interface (Input / Output, abbreviated as I / O), and a communication interface. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store RIN test data. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, it implements a method for estimating the relaxation oscillation frequency of a VCSEL chip.

[0126] In an exemplary embodiment, a computer device is provided. The computer device can be a terminal, and its internal structure diagram can be as Figure 7As shown in the figure. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface, the display unit, and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals in a wired or wireless manner, and the wireless manner can be implemented through WIFI, a mobile cellular network, near field communication (NFC), or other technologies. When the computer program is executed by the processor, it implements a relaxation oscillation frequency method. The display unit of the computer device is used to form a visually visible picture, which can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer covering the display screen, or a button, a trackball, or a touchpad provided on the computer device housing, or an external keyboard, touchpad, or mouse, etc.

[0127] Those skilled in the art can understand that Figure 7 the structure shown in the figure is only a block diagram of some structures related to the solution of this application, and does not constitute a limitation on the computer device to which the solution of this application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine some components, or have different component arrangements.

[0128] In an exemplary embodiment, a computer device is further provided, including a memory and a processor. A computer program is stored in the memory, and when the processor executes the computer program, the steps in the above method embodiments are implemented.

[0129] In an exemplary embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by the processor, the steps in the above method embodiments are implemented.

[0130] In an exemplary embodiment, a computer program product is provided, including a computer program. When the computer program is executed by the processor, the steps in the above method embodiments are implemented.

[0131] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) involved in this application are all information and data that have been authorized by the user or fully authorized by all parties, and the collection, use, and processing of relevant data need to comply with relevant regulations.

[0132] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in this application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in this application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, artificial intelligence (AI) processors, etc., without limitation.

[0133] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this application.

[0134] The above-described embodiments merely represent several implementation manners of this application. The description is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of this application. It should be noted that for those of ordinary skill in the art, without departing from the concept of this application, several modifications and improvements can still be made, and these all belong to the protection scope of this application. Therefore, the protection scope of this application should be subject to the appended claims.

Claims

1. A method for estimating relaxation oscillation frequency of a VCSEL chip, characterized in that: The method comprises: Acquire the existing RIN test data of the VCSEL chip; the RIN test data is a set of test data characterizing the light intensity fluctuation characteristics; Based on a data point set representing the RIN intensity at each frequency in the RIN test data, a frequency response curve graph is obtained; the horizontal axis of the frequency response curve graph represents the frequency and the vertical axis represents the RIN intensity; Performing differentiation processing on the frequency response curve graph to obtain a first-order derivative curve graph; The frequency corresponding to the zero point in the first-order derivative curve is used as the theoretical relaxation oscillation frequency of the VCSEL chip; The method of using the frequency corresponding to the zero point in the first-order derivative curve as the theoretical relaxation oscillation frequency of the VCSEL chip includes: Determine a first target frequency range according to the bandwidth of the VCSEL chip; determine a zero point in the first-order derivative curve graph within the first target frequency range; and determine a frequency corresponding to the zero point in the first-order derivative curve graph as a theoretical relaxation oscillation frequency of the VCSEL chip; The method further comprises: Determine whether the number of zero points determined within the first target frequency range is unique; in response to the number of zero points within the first target frequency range being unique, use the frequency corresponding to the zero point in the first-order derivative curve graph as the theoretical relaxation oscillation frequency of the VCSEL chip.

2. The method according to claim 1, characterized in that The method further comprises: Obtaining a measured relaxation oscillation frequency of the VCSEL chip; Determining a matching result between the theoretical relaxation oscillation frequency and the measured relaxation oscillation frequency; When the matching result meets the preset matching condition, the S parameter test is not performed on the VCSEL chip.

3. The method according to claim 1, characterized in that The obtaining of a frequency response curve graph based on a data point set representing the RIN intensity at each frequency in the RIN test data comprises: Based on a data point set representing the RIN intensity at each frequency in the RIN test data, an initial response curve graph is obtained; A denoising process is performed on at least one data point included in the data point set in the initial response curve graph to obtain the frequency response curve graph.

4. The method according to claim 3, characterized in that The step of performing denoising on at least one data point included in the data point set in the initial response curve graph to obtain the frequency response curve graph comprises: Performing denoising processing on at least one data point included in the data point set in the initial response curve graph based on a Gaussian filter to obtain a first intermediate response curve graph; Performing a first-order differentiation on the first intermediate response curve graph to obtain a second intermediate response curve graph; At least one extreme value data point in the data point set in the second intermediate response curve graph is truncated to obtain the frequency response curve graph.

5. The method according to claim 1, characterized in that The first target frequency range is within ±10 GHz of the bandwidth of the VCSEL chip.

6. The method according to claim 1, characterized in that The method further comprises: In response to the number of zero points within the first target frequency range not being unique, determining whether each determined zero point satisfies a preset zero point condition; The frequency corresponding to the zero point that meets the preset zero point condition in the first-order derivative curve graph is used as the theoretical relaxation oscillation frequency of the VCSEL chip.

7. The method according to claim 6, characterized in that The preset zero point condition is that the RIN intensity change rate within a certain frequency range on the left side of the zero point is greater than 0, and the RIN intensity change rate within a certain frequency range on the right side of the zero point is less than 0.

8. The method according to claim 7, characterized in that The certain frequency range is within a range of ±5 GHz of the frequency corresponding to the zero point.

9. A VCSEL chip relaxation oscillation frequency estimation device, characterized in that: The device comprises: An acquisition module is used to acquire the existing RIN test data of the VCSEL chip; the RIN test data is a set of test data that characterizes the light intensity fluctuation characteristics; A response module, configured to obtain a frequency response curve graph based on a data point set representing the RIN intensity at each frequency in the RIN test data; the horizontal axis of the frequency response curve graph represents the frequency magnitude and the vertical axis represents the RIN intensity magnitude; A differentiation module, used for performing differentiation processing on the frequency response curve graph to obtain a first-order derivative curve graph; An estimation module, used for taking the frequency corresponding to the zero point in the first-order derivative curve as the theoretical relaxation oscillation frequency of the VCSEL chip; The estimation module is further used to determine a first target frequency range according to the bandwidth of the VCSEL chip; within the first target frequency range, determine a zero point in the first-order derivative curve graph; and determine a frequency corresponding to the zero point in the first-order derivative curve graph as a theoretical relaxation oscillation frequency of the VCSEL chip; The estimation module is also used to determine whether the number of zero points determined within the first target frequency range is unique; in response to the number of zero points within the first target frequency range being unique, the frequency corresponding to the zero point in the first-order derivative curve graph is used as the theoretical relaxation oscillation frequency of the VCSEL chip.

10. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 8 are implemented.

11. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 8 are implemented.

12. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 8 are implemented.

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