Out-of-plane perpendicular anisotropy tunnel magnetoresistance sensor and preparation method thereof

Abstract

The invention relates to an out-of-plane perpendicular anisotropy tunneling magnetoresistance sensor and a preparation method thereof. The device comprises a target substrate and a stress providing module. The target substrate comprises a silicon substrate and a tunnel magnetoresistance multilayer film formed on the silicon substrate, and the tunnel magnetoresistance multilayer film has in-plane perpendicular anisotropy; and the stress providing module is used for applying target stress to the target substrate, so that the tunnel magnetoresistance multilayer film has out-of-plane perpendicular anisotropy after being bent and stretched. By adopting the sensor, the conversion from the in-plane anisotropy to the out-of-plane perpendicular anisotropy can be simply and conveniently realized, and the detection range is expanded.

Description

Technical Field

[0001] The present application relates to the technical field of tunnel magnetoresistance sensors, and in particular to an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor and a preparation method thereof. Background Art

[0002] Tunnel magnetoresistance (TMR) sensors have shown great potential in a variety of applications due to their ability to achieve high-precision detection in weak magnetic fields, especially in situations where low power consumption, precision measurement and high sensitivity are required.

[0003] Most of the existing TMR sensors are designed based on in-plane shape anisotropic tunnel junctions, which can better meet the needs of the current market. In addition, some sensors integrate flux controllers based on in-plane shape anisotropic tunnel junctions to detect out-of-plane magnetic fields. However, compared with in-plane perpendicular anisotropic tunnel junctions, out-of-plane perpendicular anisotropic tunnel junctions have higher anisotropy fields and can therefore provide a larger range, which is one of the key ways to significantly improve the detection range of TMR sensors.

[0004] However, due to the limitations of the preparation process, the production conditions of out-of-plane perpendicular anisotropic tunnel junctions are more stringent, which has become the main obstacle to their large-scale application. Summary of the invention

[0005] Based on this, it is necessary to provide an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor and a preparation method thereof to address the above technical problems.

[0006] In a first aspect, the present application provides an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor, comprising:

[0007] A target substrate, the target substrate comprising a silicon substrate and a tunnel magnetoresistance multilayer film formed on the silicon substrate, the tunnel magnetoresistance multilayer film having in-plane perpendicular anisotropy;

[0008] The stress providing module is used to apply target stress to the target substrate so that the tunnel magnetoresistance multilayer film has out-of-plane perpendicular anisotropy after bending and stretching.

[0009] In one embodiment, the stress providing module includes:

[0010] Support base;

[0011] The movable body is connected to the support base to limit the target substrate between the movable body and the support base, and the movable body can move along the extension direction of the support base. When the movable body is at the target position, the target stress is applied to the target substrate.

[0012] In one embodiment, the support base comprises:

[0013] Two support rods are symmetrically arranged based on the central normal line of the tunnel magnetoresistance multilayer film, and each support rod has a first limiting portion at the top;

[0014] At least one second limiting portion is formed on the top of the movable body;

[0015] Wherein, the first side surface of the target substrate contacts the first limiting portion, and the second side surface of the target substrate contacts the second limiting portion;

[0016] The first side surface and the second side surface are two opposite surfaces, and the first side surface is a surface on which the tunnel magnetoresistance multilayer film is provided on the target substrate.

[0017] In one embodiment, when there is one second limiting portion, the second limiting portion is located on the center normal of the tunnel magnetoresistance multilayer film; when there are multiple second limiting portions, the multiple second limiting portions are symmetrically distributed based on the center normal of the tunnel magnetoresistance multilayer film, so as to provide uniform target stress to the tunnel magnetoresistance multilayer film when the movable body is in the target position.

[0018] In one embodiment, the lower portion of each support rod has a first slot corresponding to the target position;

[0019] When the movable body is clamped in the first clamping grooves of the two support rods, a target stress is applied to the target substrate.

[0020] In one embodiment, each support rod has a second slot at the bottom, and the height of the second slot is lower than the height of the first slot;

[0021] When the movable body is stuck in the second slots of the two support rods, the movable body does not apply stress to the target substrate.

[0022] In one embodiment, the movable body comprises:

[0023] A bottom plate arranged along a first direction;

[0024] At least one support member is arranged along the second direction, the bottom of the support member is fixedly connected to the bottom plate, and the top of the support member has a second limiting portion; the second direction is perpendicular to the first direction;

[0025] The bottom plate is used for being clamped in the first clamping slot or the second clamping slot.

[0026] In one of the embodiments, when the stress providing module applies the target stress to the target substrate, the bending deformation amount of the target substrate in the thickness direction is less than 0.1%.

[0027] In a second aspect, the present application also provides a method for preparing an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor, the preparation method comprising:

[0028] The target substrate is limited on the stress providing module; the target substrate includes a silicon substrate and a tunnel magnetoresistance multilayer film formed on the silicon substrate, and the tunnel magnetoresistance multilayer film has in-plane perpendicular anisotropy;

[0029] A target stress is applied to the target substrate through a stress providing module so that the tunnel magnetoresistance multilayer film has out-of-plane perpendicular anisotropy after bending and stretching.

[0030] In one embodiment, the stress providing module includes a support base and a movable body, the movable body is connected to the support base to limit the target substrate between the movable body and the support base, and the movable body can move along the extension direction of the support base;

[0031] The preparation method also includes:

[0032] When the movable body is in an initial position, the target substrate is limited between the support base and the movable body;

[0033] The movable body is moved to a target position to apply a target stress to a target substrate.

[0034] The above-mentioned out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor and its preparation method have at least the following beneficial effects:

[0035] By forming a tunnel magnetoresistance multilayer film with in-plane perpendicular anisotropy on a silicon substrate and applying target stress using a stress providing module, the magnetic moment in the magnetic layer is caused to turn from the in-plane direction to the out-of-plane direction, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy. This transition not only enhances the anisotropy field of the sensor and expands the detection range, but also improves the sensitivity and reliability of the sensor, enabling it to achieve high-precision detection even in a weak magnetic field environment. It is suitable for low-power applications, precision measurements and high-sensitivity requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0037] FIG1 is a schematic diagram of the structure of an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor when no target stress is applied in one embodiment;

[0038] FIG2 is a schematic diagram of a structure of an in-plane perpendicular anisotropic tunnel junction in one embodiment;

[0039] FIG3 is a schematic diagram of a structure having an out-of-plane perpendicular anisotropic tunnel junction in one embodiment;

[0040] FIG4 is a second schematic structural diagram of an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor when no target stress is applied in one embodiment;

[0041] FIG5 is a diagram of an embodiment when the target stress is not applied;

[0042] FIG6 is a schematic diagram of the structure of an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor when a target stress is applied in one embodiment;

[0043] FIG7 is a fourth structural schematic diagram of an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor when no target stress is applied in one embodiment;

[0044] FIG. 8 is a schematic flow chart of a method for preparing an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor in one embodiment. DETAILED DESCRIPTION

[0045] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0047] It can be understood that the terms "first", "second", etc. used in the present application can be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element.

[0048] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0049] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to the other element, or connected to the other element through an intermediate element. In addition, the "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if there is transmission of electrical signals or data between the connected objects.

[0050] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0051] In an exemplary embodiment, as shown in FIG1 , the present application provides an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor, comprising a target substrate 2 and a stress providing module 4. The target substrate 2 comprises a silicon substrate 22 and a tunnel magnetoresistance multilayer film 24 formed on the silicon substrate 22, wherein the tunnel magnetoresistance multilayer film 24 has an in-plane perpendicular anisotropy; the stress providing module 4 is used to apply a target stress to the target substrate 2, so that the tunnel magnetoresistance multilayer film 24 has an out-of-plane perpendicular anisotropy after bending and stretching.

[0052] Among them, the target substrate 2 refers to a substrate having an in-plane perpendicular anisotropic tunnel junction, as shown in Figure 1. The in-plane perpendicular anisotropic tunnel junction includes a pinned layer, a barrier layer and a free layer stacked from bottom to top. When no target stress is applied to the target substrate 2, the magnetic moment direction of each layer is as shown in Figure 2.

[0053] Exemplarily, a tunnel magnetoresistance multilayer film 24 with in-plane perpendicular anisotropy is first deposited on a silicon substrate 22, and then a specific target stress is applied to the target substrate 2 through a stress providing module 4. When the stress acts on the multilayer film with in-plane anisotropy, the film layer will be deformed along the stress direction, so that the tunnel magnetoresistance multilayer film 24 bends and stretches under the stress, prompting the magnetization direction in the magnetic layer to turn from the in-plane direction to the out-of-plane direction (that is, the magnetic moment direction of each layer changes from that shown in FIG. 2 to that shown in FIG. 3), thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy, and enhancing the anisotropy field and detection range of the sensor. Specifically, for a multilayer film, as the thickness increases, the magnetic anisotropy will turn from out-of-plane to in-plane due to the presence of a demagnetization field. Therefore, under the action of stress, the multilayer film gradually becomes thinner, the force acting on the silicon substrate 22 is larger, the lattice distortion is larger, that is, the bond length and bond angle change, resulting in a change in magnetism, and gradually the multilayer film changes from in-plane anisotropy to out-of-plane perpendicular anisotropy. Secondly, under the action of stress, the lattice bond length and bond angle will also change, thus changing the original magnetism. In addition, from the perspective of magnetic domains, under the action of stress, the interaction coefficient is changed or chirality, DMI and other effects are produced, resulting in magnetism changes, thereby realizing the transformation of multilayer films from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0054] The above-mentioned out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor forms a tunnel magnetoresistance multilayer film 24 with in-plane perpendicular anisotropy on a silicon substrate 22, and uses a stress providing module 4 to apply a target stress, so as to cause the magnetic moment in the magnetic layer to turn from the in-plane direction to the out-of-plane direction, thereby realizing the transformation from in-plane anisotropy to out-of-plane perpendicular anisotropy. This transformation not only enhances the anisotropy field of the sensor and expands the detection range, but also improves the sensitivity and reliability of the sensor, so that it can achieve high-precision detection even in a weak magnetic field environment, and is suitable for low-power applications, precision measurements and high-sensitivity requirements.

[0055] In an exemplary embodiment, as shown in Fig. 4, the stress providing module 4 includes a support base 42 and a movable body 44. The movable body 44 is connected to the support base 42 to limit the target substrate 2 between the movable body 44 and the support base 42, and the movable body 44 can move along the extension direction of the support base 42, and when the movable body 44 is at the target position, the target stress is applied to the target substrate 2.

[0056] For example, as shown in Fig. 4, the extension direction of the support base 42 is the direction indicated by the arrow f1. The target substrate 2 is placed between the movable body 44 and the support base 42, and then the movable body 44 is moved so as to approach the support base 42 along the extension direction of the support base 42 until the predetermined target position is reached. At this time, the movable body 44 applies a target stress to the target substrate 2, so that the tunnel magnetoresistance multilayer film 24 bends and stretches under the stress, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0057] In this embodiment, the target substrate 2 is limited between the movable body 44 and the supporting base 42, and the target stress is accurately applied by moving the movable body 44 along the extension direction of the supporting base 42, thereby effectively realizing the transformation of the tunnel magnetoresistance multilayer film 24 from in-plane anisotropy to out-of-plane perpendicular anisotropy, thereby improving the anisotropy field and detection range of the sensor, and simplifying the preparation process.

[0058] In an exemplary embodiment, as shown in Figure 4, the support base 42 includes two support rods 422 symmetrically arranged based on the central normal of the tunnel magnetoresistance multilayer film 24, and the top of each support rod 422 has a first limit portion a; at least one second limit portion b is formed on the top of the moving body; wherein the first side surface of the target substrate 2 contacts the first limit portion a, and the second side surface of the target substrate 2 contacts the second limit portion b; the first side surface and the second side surface are two opposite surfaces, and the first side surface is a side of the target substrate 2 on which the tunnel magnetoresistance multilayer film 24 is provided.

[0059] Exemplarily, the center normal of the tunnel magnetoresistance multilayer film 24 is the direction indicated by the arrow f2 in FIG4 . The target substrate 2 is placed on the support base 42 so that the first side surface of the target substrate 2 (i.e., the side provided with the tunnel magnetoresistance multilayer film 24) contacts the first limit portion a, and the second side surface of the target substrate 2 contacts the second limit portion b on the moving body. Subsequently, the moving body moves along the extension direction of the support base 42 until it reaches the target position, at which time the moving body applies the target stress to the target substrate 2, causing the tunnel magnetoresistance multilayer film 24 to bend and stretch, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0060] In this embodiment, by symmetrically arranging support rods 422 on the support base 42 and cooperating with the moving body, the position accuracy and stability of the target substrate 2 when stress is applied are ensured, so that the tunnel magnetoresistance multilayer film 24 can be uniformly stressed and precisely bent and stretched, thereby efficiently realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy, improving the anisotropy field and detection range of the sensor, simplifying the preparation process, and enhancing the stability and reliability of the sensor.

[0061] In an exemplary embodiment, as shown in Figures 5 and 6, when there is one second limiting portion b, the second limiting portion b is located on the center normal of the tunnel magnetoresistance multilayer film 24; when there are multiple second limiting portions b, the multiple second limiting portions b are symmetrically distributed based on the center normal of the tunnel magnetoresistance multilayer film 24 to provide uniform target stress to the tunnel magnetoresistance multilayer film 24 when the movable body 44 is in the target position.

[0062] Exemplarily, the target substrate 2 is placed on the support base 42, so that the first side surface of the target substrate 2 (i.e., the side provided with the tunnel magnetoresistance multilayer film 24) contacts the first limiting portion a at the top of the support rod 422, and the second side surface of the target substrate 2 contacts the second limiting portion b on the moving body. As shown in FIG5, when the second limiting portion b is single, it is located on the center normal line; as shown in FIG6, when there are multiple, they are symmetrically distributed. Subsequently, the moving body moves to the target position along the extension direction of the support base 42, and at this time, a uniform target stress is applied to the target substrate 2 through the second limiting portion b, causing the tunnel magnetoresistance multilayer film 24 to be uniformly bent and stretched, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0063] In this embodiment, by designing the second limiting portion b to be single or multiple and symmetrically distributed on the center normal of the tunnel magnetoresistance multilayer film 24, the uniform distribution of stress is ensured when the target stress is applied, so that the tunnel magnetoresistance multilayer film 24 can be uniformly stressed and precisely bent and stretched, effectively realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy, improving the performance and reliability of the sensor, and simplifying the manufacturing process, ensuring the stability and high-precision detection capability of the sensor in various application environments.

[0064] In an exemplary embodiment, as shown in FIGS. 4 to 6 , the lower portion of each support rod 422 has a first slot S1 corresponding to the target position; when the movable body 44 is stuck in the first slots S1 of the two support rods 422 , the target stress is applied to the target substrate 2 .

[0065] Exemplarily, the target substrate 2 is placed on the support base 42, so that the first side surface of the target substrate 2 (i.e., the side provided with the tunnel magnetoresistance multilayer film 24) contacts the first limit portion a at the top of the support rod 422, and the second side surface of the target substrate 2 contacts the second limit portion b on the moving body. Then, the moving body is moved along the extension direction of the support base 42 until it is inserted into the first slot S1 at the lower part of the two support rods 422. At this time, the moving body applies a uniform target stress to the target substrate 2, causing the tunnel magnetoresistance multilayer film 24 to bend and stretch uniformly, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0066] In this embodiment, by setting a first card slot S1 at the lower part of each support rod 422, when the movable body 44 is inserted into the two first card slots S1, the target stress applied to the target substrate 2 can be accurately controlled to ensure uniform stress distribution, so that the tunnel magnetoresistance multilayer film 24 is uniformly stressed and precisely bent and stretched, effectively realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy, improving the performance and reliability of the sensor, and simplifying the manufacturing process, ensuring the stability and high-precision detection capability of the sensor in various application environments.

[0067] In an exemplary embodiment, as shown in Figures 4 to 6, each support rod 422 has a second card slot S2 at the lower portion, and the height of the second card slot S2 is lower than the height of the first card slot S1; when the movable body 44 is stuck in the second card slots S2 of the two support rods 422, the movable body 44 does not apply stress to the target substrate 2.

[0068] Exemplarily, the target substrate 2 is placed on the support base 42, so that the first side surface of the target substrate 2 (i.e., the side provided with the tunnel magnetoresistance multilayer film 24) contacts the first limit portion a on the top of the support rod 422, and the second side surface of the target substrate 2 contacts the second limit portion b on the movable body. Then, the movable body is moved along the extension direction of the support base 42, and first inserted into the second slot S2, at which time the movable body 44 does not apply stress to the target substrate 2; finally, the movable body 44 is further moved to be removed from the second slot S2 and inserted into the first slot S1, at which time the movable body applies target stress to the target substrate 2, causing the tunnel magnetoresistance multilayer film 24 to be uniformly bent and stretched, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0069] In this embodiment, by setting the first card slot S1 and the second card slot S2 of different heights at the lower part of the support rod 422, the movable body 44 can be first inserted into the second card slot S2 without applying stress to the target substrate 2, and then accurately apply the target stress when moving to the first card slot S1, which not only ensures the uniform distribution of stress, but also can conveniently adjust and position the target substrate 2 without applying stress, thereby simplifying the operation steps, improving the preparation accuracy and efficiency, and ensuring the accuracy and reliability of the transformation of the tunnel magnetoresistance multilayer film 24 from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0070] In an exemplary embodiment, as shown in Fig. 7, the movable body 44 includes a bottom plate 442 arranged along a first direction and at least one support member 444 arranged along a second direction. The bottom of the support member 444 is fixedly connected to the bottom plate 442, and the top of the support member 444 has a second limiting portion b; the second direction is perpendicular to the first direction; the bottom plate 442 is used to be clamped in the first card slot S1 or the second card slot S2.

[0071] Exemplarily, as shown in FIG7 , the first direction is the direction indicated by the arrow f3, and the second direction is the direction indicated by the arrow f1. The target substrate 2 is placed on the support base 42, so that the first side surface of the target substrate 2 (i.e., the side provided with the tunnel magnetoresistance multilayer film 24) contacts the first limit portion a at the top of the support rod 422, and the second side surface of the target substrate 2 contacts the second limit portion b on the movable body 44. Next, the bottom plate 442 of the movable body 44 is inserted into the second slot S2 at the lower part of the support rod 422, and no stress is applied to the target substrate 2 at this time; thereafter, the bottom plate 442 is continuously moved so that it is removed from the second slot S2 and inserted into the first slot S1, and at this time, the movable body 44 applies the target stress to the target substrate 2, causing the tunnel magnetoresistance multilayer film 24 to bend and stretch uniformly, thereby realizing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0072] In this embodiment, the movable body 44 is designed to include a base plate 442 arranged along a first direction and a support member 444 arranged along a second direction perpendicular to the first direction, so that the base plate 442 can be inserted into the slots of different heights of the support rod 422, thereby facilitating adjustment and positioning of the target substrate 2 without applying stress, and accurately applying the target stress when needed. This method not only simplifies the operating steps and improves the controllability and repeatability of the preparation process, but also ensures the accuracy and consistency of the transition of the tunnel magnetoresistance multilayer film 24 from in-plane anisotropy to out-of-plane perpendicular anisotropy, thereby enhancing the performance and reliability of the sensor.

[0073] In an exemplary embodiment, when the stress providing module 4 applies the target stress to the target substrate 2 , the bending deformation amount of the target substrate 2 in the thickness direction is less than 0.1%.

[0074] Exemplarily, the target substrate 2 is placed on the support base 42, so that the first side surface of the target substrate 2 (i.e., the side provided with the tunnel magnetoresistance multilayer film 24) contacts the first limit portion a on the top of the support rod 422, and the second side surface of the target substrate 2 contacts the second limit portion b on the movable body 44. Then, by moving the movable body 44, the bottom plate 442 thereof is moved from the second slot S2 to the first slot S1, at which time the movable body 44 applies the target stress to the target substrate 2, but ensures that the bending deformation of the target substrate 2 in the thickness direction does not exceed 0.1%, thereby achieving uniform and controllable stress application to the tunnel magnetoresistance multilayer film 24, causing the magnetization direction in the magnetic layer to turn from the in-plane direction to the out-of-plane direction, and completing the transition from in-plane anisotropy to out-of-plane perpendicular anisotropy.

[0075] In this embodiment, by controlling the bending deformation of the target substrate 2 in the thickness direction to be less than 0.1%, the uniformity and controllability of the stress distribution when the target stress is applied are ensured, and material damage or performance degradation that may be caused by excessive deformation is avoided, thereby achieving a precise transition of the tunnel magnetoresistance multilayer film 24 from in-plane anisotropy to out-of-plane perpendicular anisotropy, thereby improving the stability and reliability of the sensor, while also optimizing the preparation process, ensuring the high performance of the sensor in practical applications.

[0076] In an exemplary embodiment, as shown in FIG8 , the present application further provides a method for preparing an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor, the preparation method comprising:

[0077] S802, limiting the target substrate on the stress providing module; the target substrate includes a silicon substrate and a tunnel magnetoresistance multilayer film formed on the silicon substrate, and the tunnel magnetoresistance multilayer film has in-plane perpendicular anisotropy.

[0078] S804, applying a target stress to the target substrate through a stress providing module, so that the tunnel magnetoresistance multilayer film has out-of-plane perpendicular anisotropy after bending and stretching.

[0079] The specific implementation process of the preparation method of the out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor corresponds to the embodiment of the out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor. The specific implementation process and beneficial effects thereof can be referred to the description of the above embodiment and will not be repeated here.

[0080] In an exemplary embodiment, the stress providing module includes a support base and a movable body, the movable body is connected to the support base to limit the target substrate between the movable body and the support base, and the movable body can move along the extension direction of the support base;

[0081] The preparation method also includes:

[0082] When the movable body is in an initial position, the target substrate is limited between the support base and the movable body;

[0083] The movable body is moved to a target position to apply a target stress to a target substrate.

[0084] The specific implementation process and beneficial effects of this embodiment can refer to the description of the embodiment of the out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor mentioned above, which will not be repeated here.

[0085] It should be understood that, although the various steps in the flowchart of Fig. 8 are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in Fig. 8 may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0086] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0087] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0088] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. An out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor, characterized in that: include: A target substrate, the target substrate comprising a silicon substrate and a tunnel magnetoresistance multilayer film formed on the silicon substrate, the tunnel magnetoresistance multilayer film having in-plane perpendicular anisotropy; A stress providing module is used to apply target stress to the target substrate so that the tunnel magnetoresistance multilayer film has out-of-plane perpendicular anisotropy after bending and stretching.

2. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 1, characterized in that: The stress providing module comprises: Support base; A movable body is connected to the support base to limit the target substrate between the movable body and the support base, and the movable body can move along the extension direction of the support base. When the movable body is in the target position, the target stress is applied to the target substrate.

3. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 2, characterized in that: The support base comprises: Two support rods are symmetrically arranged based on the central normal line of the tunnel magnetoresistance multilayer film, and each of the support rods has a first limiting portion at the top; At least one second limiting portion is formed on the top of the movable body; Wherein, the first side surface of the target substrate contacts the first limiting portion, and the second side surface of the target substrate contacts the second limiting portion; The first side surface and the second side surface are two opposite surfaces, and the first side surface is a surface of the target substrate on which the tunnel magnetoresistance multilayer film is disposed.

4. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 3, characterized in that: When there is one second limiting portion, the second limiting portion is located on the center normal of the tunnel magnetoresistance multilayer film; when there are multiple second limiting portions, the multiple second limiting portions are symmetrically distributed based on the center normal of the tunnel magnetoresistance multilayer film, so as to provide uniform target stress to the tunnel magnetoresistance multilayer film when the movable body is in the target position.

5. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 3, characterized in that: The lower part of each support rod has a first slot corresponding to the target position; When the movable body is stuck in the first slots of the two support rods, the target stress is applied to the target substrate.

6. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 5, characterized in that: The lower part of each support rod has a second slot, and the height of the second slot is lower than the height of the first slot; When the movable body is stuck in the second slots of the two support rods, the movable body does not apply stress to the target substrate.

7. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 6, characterized in that: The movable body comprises: A bottom plate arranged along a first direction; at least one support member arranged along a second direction, the bottom of the support member being fixedly connected to the bottom plate, and the top of the support member having the second limiting portion; the second direction is perpendicular to the first direction; The bottom plate is used to be stuck in the first card slot or the second card slot.

8. The out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 1, characterized in that: When the stress providing module applies the target stress to the target substrate, the bending deformation amount of the target substrate in the thickness direction is less than 0.1%.

9. A method for preparing an out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor, characterized in that: The preparation method comprises: Limiting a target substrate on a stress providing module; the target substrate comprises a silicon substrate and a tunnel magnetoresistance multilayer film formed on the silicon substrate, wherein the tunnel magnetoresistance multilayer film has in-plane perpendicular anisotropy; The target stress is applied to the target substrate by the stress providing module, so that the tunnel magnetoresistance multilayer film has out-of-plane perpendicular anisotropy after bending and stretching.

10. The method for preparing the out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor according to claim 9, characterized in that: The stress providing module includes a support base and a movable body, wherein the movable body is connected to the support base so as to limit the target substrate between the movable body and the support base, and the movable body can move along the extension direction of the support base; The preparation method further comprises: When the movable body is in an initial position, limiting the target substrate between the supporting base and the movable body; The movable body is moved to a target position to apply the target stress to the target substrate.

Images