De-bonding method and de-bonding system

Abstract

The invention relates to a de-bonding method and a de-bonding system. The method comprises the following steps: acquiring edge height data and center height data of a target product; performing regional division on the target product according to the edge height data and the center height data to obtain at least one height partition; controlling a laser beam to scan and process each height partition along a preset track so as to complete de-bonding of the target product; wherein the focus position of the laser beam is correspondingly adjusted during height partition switching. According to the method, only the edge height data and the center height data of the target product need to be collected, partition processing is carried out, at least one height partition is obtained, the height data of the whole surface of the target product does not need to be collected, data processing is more simplified, and the wafer de-bonding efficiency can be improved; and meanwhile, the position of the focal point of the laser beam is rapidly adjusted according to different height partitions, so that the wafer de-bonding efficiency can be further improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor wafer processing, and in particular to a debonding method and a debonding system. Background Art

[0002] With the increasing demand for large-scale integration and high-density packaging, the thickness of each layer of chips used in the stack inevitably needs to be thinned. Currently, the thickness of the chips in the more advanced stacked packages is less than 100um. For some applications, the silicon wafer / chip is back-ground and polished to 50um or even thinner. Although single-crystal silicon has very high mechanical strength, the brittleness of the silicon wafer will increase in the process of reducing the thickness. The thinned silicon wafer is very easy to bend or break during the subsequent processing, which poses a great challenge to automated equipment. Therefore, in order to enhance the mechanical strength of the wafer during the processing, it is necessary to adhere the processed wafer to the substrate, and after the wafer processing is completed, the wafer and the substrate are peeled off. The process of peeling the wafer and the substrate is the debonding process.

[0003] Since laser debonding is a stress-free debonding method, it can significantly reduce the risk of chip breakage, thus significantly improving the success rate of the chip debonding process and improving the yield rate. As the chip thickness becomes thinner and the line width and line spacing continue to shrink, the advantages of laser debonding will become more obvious.

[0004] In conventional technology, the wafer is debonded by detecting the height of the wafer surface in real time and adjusting the height of the Z-axis of the mechanical motion axis according to the height detection result to adjust the position of the laser focus.

[0005] However, due to the heating and cooling processes of some types of wafers during the bonding process, the bonded wafers are warped and uneven, which in turn leads to a variable height difference on the surface of the bonded wafer. Therefore, when detecting the height of the wafer surface, the traditional technology needs to monitor the wafer surface height data in real time, which reduces the rate of determining the focus position; at the same time, the height of the Z axis of the mechanical motion axis is adjusted according to the real-time monitoring results, resulting in the wafer debonding rate being limited by the movement speed of the mechanical motion axis, which further reduces the efficiency of wafer debonding. Summary of the invention

[0006] Based on this, it is necessary to provide a debonding method and a debonding system that can improve the chip debonding efficiency in order to solve the above technical problems.

[0007] In a first aspect, the present application provides a debonding method, comprising:

[0008] Obtain edge height data and center height data of the target product;

[0009] Divide the target product into regions according to the edge height data and the center height data to obtain at least one height partition;

[0010] The laser beam is controlled to scan and process each height partition along a preset trajectory to complete the debonding of the target product; wherein the focal position of the laser beam is correspondingly adjusted when the height partition is switched.

[0011] In one embodiment, the target product is divided into regions according to the edge height data and the center height data to obtain at least one height partition, including:

[0012] Determine a target height difference of the target product according to the edge height data and the center height data of the target product;

[0013] The target product is divided into regions according to the target height difference to obtain at least one height partition.

[0014] In one embodiment, the target product is divided into regions according to the target height difference to obtain at least one height partition, including:

[0015] Determine the focal depth of the laser beam corresponding to the focused spot and compare the focal depth with the target height difference;

[0016] When the target height difference is less than or equal to the focal depth, the target product is divided into regions to obtain a height partition;

[0017] When the target height difference is greater than the focal depth, the target product is divided into regions to obtain multiple height partitions.

[0018] In one embodiment, the method further comprises:

[0019] According to the height difference range corresponding to each height partition, the focus position corresponding to each height partition is determined.

[0020] In one embodiment, the method further comprises:

[0021] When acquiring the edge height data and the center height data of the target product, recording the edge coordinate data and the center coordinate data of the target product;

[0022] Determine the switching coordinate data between any two adjacent height partitions in the target product according to the edge coordinate data and the center coordinate data of the target product;

[0023] When it is recognized that the processing point of the laser beam moves to the switching coordinate data, the focal position of the laser beam is adjusted according to the focal positions corresponding to the height partitions.

[0024] In one embodiment, controlling the laser beam to scan and process each height partition along a preset trajectory to complete the debonding of the target product includes:

[0025] Performing collimation and beam expansion processing on the laser beam to obtain a collimated and beam expanded laser beam;

[0026] The collimated and expanded laser beam is subjected to beam shaping processing to obtain a shaped laser beam; wherein the shaped laser beam is a square flat-top beam.

[0027] In a second aspect, the present application further provides a debonding system, the system comprising a control device, the control device comprising:

[0028] An acquisition module, used to acquire edge height data and center height data of a target product;

[0029] A partitioning module, used to partition the target product into regions according to the edge height data and the center height data, and obtain at least one height partition;

[0030] The debonding module is used to control the laser beam to scan and process each height partition along a preset trajectory to complete the debonding of the target product; wherein the focus position of the laser beam is correspondingly adjusted when the height partition is switched.

[0031] In one embodiment, the system further comprises:

[0032] The optical zoom module comprises a lens and a motor, and the optical zoom module is used to adjust the focal position of the laser beam.

[0033] In one embodiment, the system further comprises:

[0034] The beam expander is used to collimate and expand the laser beam to obtain a collimated and expanded laser beam.

[0035] In one embodiment, the system further comprises:

[0036] The diffractive optical element is used to perform beam shaping processing on the collimated and expanded laser beam to obtain a shaped laser beam; wherein the shaped laser beam is a flat-top beam.

[0037] The above debonding method and debonding system obtain edge height data and center height data of the target product; divide the target product into regions according to the edge height data and center height data to obtain at least one height partition; control the laser beam to scan and process each height partition along a preset trajectory to complete the debonding of the target product; wherein the focus position of the laser beam is adjusted accordingly when the height partition is switched. With this method, based on the characteristics of wafer warpage, only the edge height data and center height data of the wafer product need to be collected and partitioned, without the need to collect the height data of the entire surface of the wafer product, which simplifies data processing and can improve the efficiency of wafer debonding. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0039] FIG1 is a diagram of an application environment of a debonding method in one embodiment;

[0040] FIG2 is a schematic diagram of the structure of a product to be debonded in one embodiment;

[0041] FIG3 is a schematic flow diagram of a debonding method in one embodiment;

[0042] FIG4 is a schematic diagram of a process of dividing target products into regions in one embodiment;

[0043] FIG5 is a schematic diagram of a warping state of a wafer in one embodiment;

[0044] FIG6 is a schematic diagram of the structure of a control device in a debonding system according to an embodiment;

[0045] FIG. 7 is a schematic diagram of the structure of a debonding device in one embodiment. DETAILED DESCRIPTION

[0046] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0047] The debonding method provided in the embodiment of the present application can be applied in the application environment shown in FIG. 1. The terminal 102 communicates with the debonding system 104 through a network, and the debonding system 104 includes a human-computer interaction interface. The terminal 102 sends a debonding request to the debonding system 104, and the debonding system 104 receives the debonding request, obtains the edge height data and the center height data of the target product; divides the target product into regions according to the edge height data and the center height data to obtain at least one height partition; controls the laser beam to scan and process each height partition along a preset trajectory to complete the debonding of the target product; wherein the focus position of the laser beam is adjusted accordingly when the height partition is switched. The terminal 102 can be, but is not limited to, various personal computers, laptops, smart phones, tablet computers, Internet of Things devices and portable wearable devices, and the Internet of Things devices can be smart speakers, smart TVs, smart air conditioners, smart car-mounted devices, etc. The portable wearable device can be a smart watch, a smart bracelet, a head-mounted device, etc. The debonding system 104 can include a server.

[0048] Taking the laser debonding process of wafers (chips) as an example, the wafer is fixed on the glass substrate by bonding glue. The laser is incident through the glass substrate and acts on the bonding glue. The glue material decomposes, and the wafer is separated from the substrate to achieve debonding. As shown in Figure 2, it is a schematic diagram of the structure of the product to be debonded. Due to the heating, pressing, and cooling process during the bonding process, some types of wafers cause the entire bonded wafer to be uneven and warped, and some encapsulated resin wafers (EMC / PMMA) generally also have warping. During the laser debonding process of the wafer, the warping, unevenness, height difference, etc. of the wafer will have a significant impact on the focusing position of the laser beam (the change in spot size affects the energy density), resulting in poor laser debonding processing, and then leading to debonding failure, local damage to the substrate wafer, or unclean texture cleaning, etc. However, in the conventional technology, during the laser debonding process, the height of the wafer surface is detected, and the Z-axis height is adjusted according to the height detection result, and then the laser focus position is adjusted to debond the wafer, but the conventional technology is limited by the movement speed of the mechanical motion axis, and the processing efficiency is low. A debonding method and a debonding system provided in an embodiment of the present application can capture the rapidly changing height difference of the wafer surface in real time, and quickly adjust the position of the laser beam focus according to the height data of different height partitions, thereby improving the efficiency of wafer debonding.

[0049] In an exemplary embodiment, as shown in FIG3 , a debonding method is provided, which is described by taking the method applied to the debonding system in FIG1 as an example, and includes the following steps 302 to 306. Among them:

[0050] Step 302, obtaining edge height data and center height data of the target product.

[0051] The target product refers to the product that needs to be separated from the substrate during the laser debonding process. The product can be a silicon-based wafer, chip, RF component, etc.

[0052] For example, taking the target product as a wafer (chip) that needs to be laser debonded as an example, the edge height data of the wafer refers to the height information measured in the edge area of ​​the wafer, that is, the area closer to the outer edge of the wafer. The center height data of the wafer refers to the height information measured in the center area of ​​the wafer, that is, the middle position of the wafer. The edge height data and center height data of the wafer can be obtained by equipment such as a 3D surface profiler or a laser scanning confocal microscope, which can measure the height changes at different positions on the wafer surface with high precision.

[0053] Step 304: divide the target product into regions according to the edge height data and the center height data to obtain at least one height partition.

[0054] Optionally, height measurement equipment such as laser scanning, confocal microscopy, white light interferometry, etc. are used to accurately measure the height data of different positions on the surface of the target product (wafer). These height data will change with different positions, and the edge height data and center height data of the target product (wafer) are obtained. According to the edge height data and center height data obtained, multiple height difference ranges are set, and the surface of the target product (wafer) is divided into at least one height partition according to the multiple height difference ranges. The wafer surface can also be divided into at least one height partition according to the change rate of the wafer surface height data.

[0055] Step 306, controlling the laser beam to scan and process each height partition along a preset trajectory to complete the debonding of the target product; wherein the focus position of the laser beam is correspondingly adjusted when the height partition is switched.

[0056] Optionally, controlling the laser beam to scan and process each height partition along a preset trajectory may include adjusting the laser beam, such as adjusting the intensity, shape and other parameters of the laser beam according to specific needs to ensure that the energy distribution of the laser beam in the target area meets expectations. Among them, the energy density of the laser beam can be adjusted by changing the output power of the laser source, that is, adjusting the intensity of the laser beam. The shape of the laser beam can be adjusted by a diffractive optical element and a beam shaper, and the shape of the laser beam can be adjusted to a rectangle, etc.

[0057] Controlling the laser beam to scan and process each height partition along a preset trajectory also includes adjusting the focal position of the laser beam according to the focal positions corresponding to each height partition. Exemplarily, the focal length of the laser beam can be adjusted by an optical element, thereby adjusting the focal position of the laser beam, so that the laser beam can be focused on the focal positions corresponding to each height partition, that is, the focal depth of the laser beam can meet the requirements of each height partition. Among them, the optical element can be an optical zoom module. At the same time, the laser beam can be moved along a preset trajectory by controlling devices such as a scanning galvanometer. It can be understood that the use of optical focusing instead of the original mechanical axis focusing method can further improve the efficiency of debonding.

[0058] In the above debonding method, the edge height data and center height data of the target product are obtained, and the target product is divided into regions according to the edge height data and the center height data to obtain at least one height partition. The position of the laser beam focus can be quickly adjusted according to the different height partitions, thereby improving the efficiency of chip debonding and avoiding the problem of laser beam focus offset or inaccurate laser energy concentration; the laser beam is controlled to scan and process each height partition along a preset trajectory to complete the debonding of the target product; wherein, the focus position of the laser beam is adjusted accordingly when the height partition is switched, and the focus position can be adjusted for different height partitions, so as to flexibly respond to the processing requirements of different height partitions, and ensure that the adjusted beam can be accurately focused on each height partition, thereby improving the chip debonding accuracy.

[0059] During the laser debonding process of the target product, the focal depth of the laser beam is an effective depth range. Only within this range can the laser beam be effectively focused and process the surface of the target product. If the surface of the target product is flat, the focus of the laser beam can be simply set at a fixed height, for example, the entire surface can be processed with the same focal depth. However, if there is a height difference on the surface of the target product, for example, the center of the target product is higher than the edge (or vice versa), then the surface height of the target product at different positions will affect the focusing effect of the laser beam. If the depth of the laser beam focus is not aligned with the different heights of the surface, the laser beam will not be able to effectively focus on certain areas, thereby affecting the accuracy and consistency of the processing. That is, when one area of ​​the target product is higher than another area, the focus of the laser beam needs to be adjusted to the surface height of this area in order to effectively irradiate and process. In the actual debonding process of the target product, the surface of the target product is usually not completely flat, and factors such as temperature changes, processing and cooling may cause different degrees of warping (i.e., height difference) on the surface of the target product. Therefore, it is necessary to divide the target product into regions according to the surface height difference of the target product, and then determine the corresponding focus position according to the different areas of the target product. In an exemplary embodiment, as shown in FIG4 , dividing the target product into regions according to the edge height data and the center height data to obtain at least one height partition includes steps 402 to 404. Among them:

[0060] Step 402: determining a target height difference of the target product according to the edge height data and the center height data of the target product.

[0061] Step 404 , dividing the target product into regions according to the target height difference to obtain at least one height partition.

[0062] Optionally, the target height difference of the target product is calculated based on the edge height data and center height data of the target product. The target height difference is calculated based on the height data corresponding to the lowest point and the height data corresponding to the highest point of the target product. Since the warping of the surface of the target product during processing, temperature change or cooling is generally symmetrical, the height difference range corresponding to each position on the wafer surface can be inferred through a proportional relationship based on the target height difference, thereby determining multiple height partitions of the wafer.

[0063] Taking the target product as a wafer as an example, during wafer processing, temperature change or cooling, the warping of the wafer is generally symmetrical, with the edges on both sides bending upward or downward. FIG5 is a schematic diagram of the warping state of the wafer. For example, if the edge position of the wafer is determined to be the lowest position based on the edge height data and center height data of the wafer, the center position of the wafer is the highest position at this time. The lowest position is used as the reference point, and the target height difference is calculated based on the height data corresponding to the reference point and the highest position. Assuming that the target height difference is 15mm, according to the target height difference, the height difference range of the wafer surface is calculated through a proportional relationship, including a 0-5mm height difference area, a 5-10mm height difference area, and a 10-15mm height difference area, and the wafer is divided into regions according to these height difference areas to obtain multiple height partitions. Among them, the 0-5mm height difference area, the 5-10mm height difference area, and the 10-15mm height difference area correspond to a height partition respectively.

[0064] In the previous exemplary embodiment, the target product is divided into regions according to the target height difference to obtain at least one height partition, including: determining the focal depth of the laser beam corresponding to the focused spot, and comparing the focal depth with the target height difference; when the target height difference is less than or equal to the focal depth, the target product is divided into regions to obtain one height partition; when the target height difference is greater than the focal depth, the target product is divided into regions to obtain multiple height partitions.

[0065] Among them, the focal depth refers to the depth range in which the focused spot of the laser beam can maintain an effective focusing state; and the larger the focal depth, the wider the height range that the laser beam can cover.

[0066] Exemplarily, when the target height difference is less than or equal to the focal depth, it means that the height variation range of the wafer surface is within the depth range of the effective focusing state of the laser beam, so the wafer surface is divided into one height partition. When the target height difference is greater than the focal depth, it means that the height difference of the wafer surface exceeds the depth range in which the laser beam can maintain an effective focusing state, so the target product is divided into multiple height partitions according to the target height difference.

[0067] In this embodiment, the target height difference of the target product is determined based on the edge height data and the center height data of the target product, and the target product is divided into regions based on the target height difference and the focal depth of the laser beam corresponding to the focused spot, so that each height partition of the target product can be covered by the focal depth of the laser beam corresponding to the focused spot, thereby ensuring the consistency and accuracy of the debonding effect of the target product. At the same time, since the warping direction of the target product basically has only two situations, that is, the edges on both sides are bent upward or downward, this embodiment only needs to collect the edge height data and the center height data of the target product to partition the target product, without measuring the surface height of the target product multiple times, which can reduce the amount of data processing and further improve the debonding processing efficiency.

[0068] In the previous exemplary embodiment, the focus position corresponding to each height partition is determined according to the height difference range corresponding to each height partition.

[0069] For example, the laser beam usually has a limited focal depth during the processing. When the height difference of the wafer surface exceeds the depth range in which the laser beam can maintain an effective focusing state, the focal depth of the laser beam corresponding to the focused spot cannot cover the entire wafer surface. Therefore, it is necessary to adjust the focal position of the laser beam according to the height difference range corresponding to different height partitions of the wafer surface, that is, a focal position corresponds to a 0-5mm height difference area, a second focal position corresponds to a 5-10mm height difference area, and a third focal position corresponds to a 10-15mm height difference area. In this way, each height partition of the wafer can be covered by the focal depth of the laser beam, thereby ensuring the consistency and accuracy of the wafer laser debonding effect. For example, the 0-5mm height difference area indicates that the surface height of the wafer is relatively low, so the focal position is set at a lower height; the 5-10mm height difference area indicates that the surface height of the wafer is relatively moderate, so the focal position is set at a relatively moderate height; the 10-15mm height difference area indicates that the surface height of the wafer is higher, so the focal position is set at a higher height. At the same time, during wafer laser debonding, the focal position of the laser beam only needs to be adjusted three times, without the need to frequently move the processing position and measure the surface height of the wafer again, and then adjust the focal position of the laser beam, which can greatly improve the debonding processing efficiency.

[0070] In this embodiment, the focal position corresponding to each height partition is determined according to the height difference range corresponding to each height partition, so that each height partition of the target product can be covered by the focal depth of the laser beam, thereby ensuring the consistency and accuracy of the debonding effect of the target product. At the same time, during the debonding process of the target product, only a few adjustments to the focal position of the laser beam are required, without the need to frequently move the processing position and then measure the surface height of the target product multiple times, and then adjust the focal position of the laser beam for debonding, which can greatly improve the debonding processing efficiency.

[0071] In an exemplary embodiment, the method also includes: when acquiring the edge height data and center height data of the target product, recording the edge coordinate data and center coordinate data of the target product; determining the switching coordinate data between any two adjacent height partitions in the target product based on the edge coordinate data and center coordinate data of the target product; when it is identified that the processing point of the laser beam moves to the switching coordinate data, adjusting the focal position of the laser beam according to the focal positions corresponding to each height partition.

[0072] Among them, the edge coordinate data and center coordinate data of the target product refer to the coordinate data corresponding to the edge position and center position of the target product respectively. The switching coordinate data refers to the coordinate data corresponding to the switching position, and the switching position refers to the "critical position" where the laser beam needs to adjust the focal position when transitioning from one height partition to the next height partition. The processing point of the laser beam refers to the specific position where the laser beam acts on the wafer surface during the wafer debonding process. The processing point of the laser beam can refer to the position where the focus of the laser beam is located.

[0073] Since when the processing point of the laser beam moves from one height partition to a new height partition, the height change of the height partition is different from that of the previous height partition, the focal position of the laser beam needs to be adjusted to adapt to the height conditions corresponding to the new height partition. Exemplarily, when the target height difference of the wafer is greater than the focal depth of the focused spot corresponding to the laser beam, the wafer is divided into regions to obtain multiple height partitions. According to the edge coordinate data and center coordinate data of the wafer, the switching coordinate data between any two adjacent height partitions in the wafer is determined. When it is identified that the processing point of the laser beam moves to the switching coordinate data, the laser beam is controlled to automatically adjust the focal position so that the focal position of the laser beam adapts to the height conditions corresponding to the new height partition, thereby ensuring the debonding accuracy of the laser beam in each height partition. Among them, the switching position corresponding to the switching coordinate data can be the junction of any two adjacent height partitions on the wafer.

[0074] In this embodiment, when it is identified that the processing point of the laser beam moves to the switching coordinate data, the focal position of the laser beam can be quickly adjusted according to the focal positions corresponding to each height partition, thereby improving the efficiency of debonding; at the same time, within different height partitions, it can ensure that the focal position of the laser beam is always focused on the focal position corresponding to each height partition, thereby ensuring the effectiveness of the laser beam in debonding in each height partition.

[0075] In an exemplary embodiment, the laser beam is controlled to scan each of the height partitions along a preset trajectory to complete the debonding of the target product, including: collimating and expanding the laser beam to obtain a collimated and expanded laser beam; and beam shaping the collimated and expanded laser beam to obtain a shaped laser beam; wherein the shaped laser beam is a flat-top beam.

[0076] Exemplarily, due to the large divergence and uneven energy distribution of the laser beam, this may affect the efficiency and effect of debonding. Therefore, in order to ensure that the laser beam can achieve the ideal debonding effect, the laser beam needs to be processed in a variety of ways. Since the laser beam will gradually diffuse after emission, forming a wider spot, which makes focusing difficult and affects the accuracy of debonding, it is necessary to collimate and expand the laser beam to reduce the divergence of the laser beam, so that the laser beam is more parallel and avoids the beam from diffusing too quickly. Optionally, the pre-emitted laser beam can be collimated and expanded by an optical collimation system. After the laser beam is collimated and expanded, in order to make the spot of the laser beam cover the entire processing area more evenly, thereby ensuring the consistency and efficiency of the processing, the laser beam after collimation and expansion is subjected to beam shaping to obtain a flat-top beam. Optionally, the collimated and expanded laser beam can be shaped from the original circular or elliptical Gaussian beam to a flat-top beam by an optical diffraction optical element.

[0077] In the previous exemplary embodiment, the method further includes: performing filtering processing on the shaped laser beam to obtain an adjusted beam.

[0078] After the pre-emitted laser beam is collimated, expanded and shaped, the shaped laser beam may still contain some undesirable components, such as high-order diffracted light, stray light, interference light, etc. High-order diffracted light will have an adverse effect on the focusing effect of the laser beam, resulting in unevenness during the debonding process. Therefore, in order to filter out the high-order diffracted light, the shaped laser beam is filtered.

[0079] In this embodiment, the laser beam is collimated, expanded and shaped to improve the focusing ability of the laser beam and to make the laser beam evenly cover the entire processing area. The shaped laser beam is filtered to remove unnecessary light components, and the filtered beam can ensure that the laser debonding process on the surface of the target product is more accurate, thereby improving the debonding processing effect.

[0080] In another embodiment, a debonding method is provided, the method comprising:

[0081] Obtain edge height data and center height data of the target product;

[0082] According to the edge height data and center height data of the target product, the target height difference of the target product is determined; the focal depth of the laser beam corresponding to the focused spot is determined, and the focal depth is compared with the target height difference; when the target height difference is less than or equal to the focal depth, the target product is divided into regions to obtain a height partition; when the target height difference is greater than the focal depth, the target product is divided into regions to obtain multiple height partitions.

[0083] According to the height difference range corresponding to each height partition, the focus position corresponding to each height partition is determined.

[0084] When acquiring the edge height data and center height data of the target product, the edge coordinate data and center coordinate data of the target product are recorded; based on the edge coordinate data and center coordinate data of the target product, the switching coordinate data between any two adjacent height partitions in the target product are determined; when it is identified that the processing point of the laser beam moves to the switching coordinate data, the focal position of the laser beam is adjusted according to the focal positions corresponding to each of the height partitions.

[0085] The laser beam is collimated and expanded to obtain a collimated and expanded laser beam; the collimated and expanded laser beam is beam shaped to obtain a shaped laser beam; wherein the shaped laser beam is a flat-top beam.

[0086] The laser beam is controlled to scan and process each of the height partitions along a preset trajectory to complete the debonding of the target product; wherein the focal position of the laser beam is correspondingly adjusted when the height partitions are switched.

[0087] In this embodiment, the target product is divided into regions according to the target height difference and the focal depth of the laser beam corresponding to the focused spot, so that each height partition of the target product can be covered by the focal depth of the laser beam corresponding to the focused spot, thereby ensuring the consistency and accuracy of the debonding effect of the target product. At the same time, since the warping direction of the target product basically has only two situations in which the edges on both sides are bent upward or downward, the present application only needs to collect the edge height data and the center height data of the target product to partition the target product, without measuring the surface height of the target product multiple times, which can reduce the amount of data processing, and further improve the debonding processing efficiency. According to the height difference range corresponding to each height partition, the focal position corresponding to each height partition is determined, so that each height partition of the target product can be covered by the focal depth of the laser beam, thereby ensuring the consistency and accuracy of the debonding effect of the target product. At the same time, during the debonding process of the target product, only a few adjustments to the focal position of the laser beam are required, without the need to frequently move the processing position and then measure the surface height of the target product multiple times, and then adjust the focal position of the laser beam for debonding, which can greatly improve the debonding processing efficiency. When it is identified that the processing point of the laser beam moves to the switching coordinate data, the focal position of the laser beam can be quickly adjusted according to the focal positions corresponding to each height partition, thereby improving the efficiency of debonding; at the same time, it can ensure that the focal position of the laser beam is always focused on the focal position corresponding to each height partition in different height partitions, thereby ensuring the effectiveness of the laser beam in debonding in each height partition. Collimating and expanding the laser beam and shaping the beam can improve the focusing ability of the laser beam and enable the laser beam to evenly cover the entire processing area. Filtering the shaped laser beam can remove unnecessary light components, and the filtered beam can ensure that the laser debonding process on the surface of the target product is more accurate, thereby improving the debonding processing effect.

[0088] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0089] Based on the same inventive concept, an embodiment of the present application also provides a debonding system for implementing the above-mentioned debonding method.

[0090] In an exemplary embodiment, the debonding system includes a control device and a debonding device, the debonding device is in communication with the control device, and the control device is used to control the debonding device to perform a debonding operation. As shown in FIG6 , it is a schematic diagram of the structure of the control device, including: an acquisition module 602, a division module 604 and a debonding module 606, wherein:

[0091] An acquisition module 602 is used to acquire edge height data and center height data of a target product;

[0092] A division module 604 is used to divide the target product into regions according to the edge height data and the center height data to obtain at least one height partition;

[0093] The debonding module 606 is used to control the laser beam to scan and process each of the height partitions along a preset trajectory to complete the debonding of the target product; wherein the focus position of the laser beam is correspondingly adjusted when the height partitions are switched.

[0094] Each module in the control device of the above debonding system can be implemented in whole or in part by software, hardware and a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each module.

[0095] In an exemplary embodiment, as shown in FIG7 , a schematic diagram of the structure of a debonding device is shown. The debonding device includes a laser, a beam expander, a diffractive optical element (DOE), a first lens and a second lens, an aperture, an optical zoom module, a scanning galvanometer, and a focusing mirror.

[0096] Among them, the laser is used to emit the initial laser beam. The beam expander is used to collimate and expand the initial laser beam emitted by the laser. The diffractive optical element is connected after the beam expander, and is used to shape the collimated and expanded laser beam into a flat-top light, which is convenient for debonding processing, that is, the diffractive optical element is used to change the shape and energy distribution of the beam, and it can shape the laser beam into the required spot shape (such as a flat-top beam). The first lens and the second lens are combined to form a 4F system, in which the aperture is located at the focus of the first lens and the second lens, which is used to filter out high-order diffraction light to obtain an adjusted beam and improve the processing effect. The optical zoom module is used to quickly change the focal position of the adjusted beam. Specifically, the optical zoom module is used to adjust the focusing distance and spot size of the adjusted beam. By adjusting the focal length, the focusing effect of the adjusted beam can be changed to meet different processing requirements; the optical zoom module includes a lens and a motor, and the motor drives the lens to move to change the divergence angle of the laser beam to achieve zooming. The scanning galvanometer is used to drive the adjusted beam for rapid scanning processing. The focusing mirror is used to focus the adjusted light beam after passing through the scanning galvanometer.

[0097] Exemplarily, after the pre-emitted laser beam is collimated and expanded, beam shaped, and filtered by a beam expander, a diffractive optical element, a first lens, a second lens, and an aperture to obtain an adjusted beam, an optical zoom module is used to quickly change the focal position of the adjusted beam according to the focal positions corresponding to each height partition, so that the adjusted beam can be focused on the focal positions corresponding to each height partition. Specifically, the lens is driven to move by a motor, and the focal length of the beam is changed as the lens position is adjusted, thereby controlling the focal position of the adjusted beam on the target product, and adjusting the focal position of the adjusted beam in each height partition.

[0098] After the optical zoom module is used to focus the adjusted light beam at the focal position corresponding to each height partition, the scanning galvanometer and the focusing mirror are controlled to adjust the focusing state of the adjusted light beam in each height partition, that is, the adjusted light beam is quickly scanned in each height partition by the scanning galvanometer. The focusing mirror is controlled so that the adjusted light beam can be focused on the focal position corresponding to each height partition. The focal position corresponding to each height partition is the bonding area corresponding to each height partition, such as the bonding area between the wafer and the substrate.

[0099] In this embodiment, the debonding system includes a control device and a debonding device, the debonding device is connected to the control device in communication, and the control device is used to control the debonding device to perform a debonding operation. The control device adjusts the focal position of the laser beam in each height partition according to the height difference range corresponding to each height partition, so that the laser beam can quickly adapt to the different heights of the target product, improve the rate and flexibility of the laser beam zoom, and thus improve the processing efficiency and versatility of the debonding.

[0100] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0101] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0102] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A debonding method, characterized in that: The method comprises: Obtain edge height data and center height data of the target product; Divide the target product into regions according to the edge height data and the center height data to obtain at least one height partition; The laser beam is controlled to scan and process each of the height partitions along a preset trajectory to complete the debonding of the target product; wherein the focal position of the laser beam is correspondingly adjusted when the height partitions are switched.

2. The method according to claim 1, characterized in that The step of dividing the target product into regions according to the edge height data and the center height data to obtain at least one height partition includes: Determining a target height difference of the target product according to the edge height data and the center height data of the target product; The target product is divided into regions according to the target height difference to obtain at least one height partition.

3. The method according to claim 2, characterized in that The step of dividing the target product into regions according to the target height difference to obtain at least one height partition includes: Determining the focal depth of the laser beam corresponding to the focused spot, and comparing the focal depth with the target height difference; When the target height difference is less than or equal to the focal depth, the target product is divided into regions to obtain a height partition; When the target height difference is greater than the focal depth, the target product is divided into regions to obtain a plurality of height partitions.

4. The method according to claim 2, characterized in that: The method further comprises: The focus positions corresponding to the height partitions are determined according to the height difference ranges corresponding to the height partitions.

5. The method according to claim 4, characterized in that The method further comprises: When acquiring the edge height data and the center height data of the target product, recording the edge coordinate data and the center coordinate data of the target product; Determine switching coordinate data between any two adjacent height partitions in the target product according to the edge coordinate data and the center coordinate data of the target product; When it is identified that the processing point of the laser beam moves to the switching coordinate data, the focal position of the laser beam is adjusted according to the focal positions corresponding to the height partitions.

6. The method according to claim 1, characterized in that The controlling the laser beam to scan and process each of the height partitions along a preset trajectory to complete the debonding of the target product includes: Performing collimation and beam expansion processing on the laser beam to obtain a collimated and expanded laser beam; The collimated and expanded laser beam is subjected to beam shaping processing to obtain a shaped laser beam; wherein the shaped laser beam is a flat-top beam.

7. A debonding system, characterized in that: The system comprises a control device, the control device comprising: An acquisition module, used to acquire edge height data and center height data of a target product; A partitioning module, used for partitioning the target product into regions according to the edge height data and the center height data to obtain at least one height partition; The debonding module is used to control the laser beam to scan and process each of the height partitions along a preset trajectory to complete the debonding of the target product; wherein the focus position of the laser beam is correspondingly adjusted when the height partitions are switched.

8. The system according to claim 7, characterized in that The system further comprises: The optical zoom module comprises a lens and a motor, and the optical zoom module is used to adjust the focal position of the laser beam.

9. The system according to claim 7, characterized in that The system further comprises: The beam expander is used to collimate and expand the laser beam to obtain a collimated and expanded laser beam.

10. The system according to claim 9, characterized in that The system further comprises: The diffractive optical element is used to perform beam shaping processing on the collimated and expanded laser beam to obtain a shaped laser beam; wherein the shaped laser beam is a flat-top beam.

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