Substrate processing method and apparatus
By replacing the chamber atmosphere from the first gas to the second gas in the substrate processing method and device, and liquid processing is performed in the second gas atmosphere, combined with the gas recovery technology, the semiconductor substrate cleaning/wet etching is solved. The problem of gas waste has achieved cost savings and improved gas use efficiency.
Patent Information
- Application Number
- CN202310761193.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-26
- Publication Date
- 2024-12-27
AI Technical Summary
In the prior art, the use of special gases (such as nitrogen or rare gases) during semiconductor substrate cleaning/wet etching has resulted in gas waste and increased costs, which has failed to effectively solve this problem.
In the substrate processing method and device, after liquid treatment is performed in the first gas atmosphere, the chamber atmosphere is replaced with a second gas atmosphere, and liquid treatment is performed in the second gas atmosphere, and non-oxygen-containing gas is used for engraving. Erosion, combined with gas atmosphere replacement and recycling technology to avoid gas waste.
It effectively avoids the waste of special gases, reduces process costs, and improves gas usage efficiency.
Smart Images
Figure CN119208182A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of substrate processing, and in particular to a substrate processing method and device. Background Art
[0002] For semiconductor substrate cleaning / wet etching, a stable and controllable system is obviously very important, especially for certain specific solutions (such as tetramethylammonium hydroxide (TMAH)).
[0003] In the current cleaning and etching process, in order to promptly remove the residual chemicals and products during the semiconductor substrate cleaning / wet etching process and solve the particle problem, special gases (similar to nitrogen or rare gases) are continuously transported into the cleaning chamber. This not only causes a waste of special gases, but also increases costs.
[0004] Currently, no effective solution has been proposed for the problem of special gas waste in related technologies. Summary of the invention
[0005] The embodiments of the present application provide a substrate processing method and device to at least solve the problem of waste of special gases in the related art.
[0006] In a first aspect, an embodiment of the present application provides a substrate processing method, the method comprising:
[0007] A first liquid treatment step: performing liquid treatment on the substrate by using a first liquid in a chamber in a first gas atmosphere, wherein the first gas atmosphere means that there is only the first gas in the chamber;
[0008] A gas atmosphere replacement step: replacing the atmosphere of the chamber from the first gas atmosphere to a second gas atmosphere, wherein the second gas atmosphere means that there is only a second gas in the chamber, and the second gas is different from the first gas;
[0009] A second liquid treatment step: performing liquid treatment on the substrate using a second liquid in the chamber in the second gas atmosphere, wherein the second liquid is different from the first liquid.
[0010] In some of the embodiments, the second gas is a non-oxygen-containing gas.
[0011] In some of the embodiments, in the gas atmosphere replacement step, the replacement time used to replace the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere is not less than a replacement critical time, wherein the replacement critical time is the minimum time used to allow only the second gas to be present in the chamber.
[0012] In some of the embodiments, the gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas;
[0013] The replacement critical time t satisfies the following equation:
[0014]
[0015] Wherein, V is the volume occupied by the gas in the chamber;
[0016] Q is the gas flow rate of the gas exhausted from the chamber in the gas atmosphere replacement step.
[0017] In some of these embodiments,
[0018] The second liquid processing step further includes: introducing the second gas into the chamber, exhausting the second gas from the chamber, and recovering the second gas exhausted from the chamber.
[0019] In some of the embodiments, the method further includes filtering the second gas exhausted from the chamber before recovering the second gas exhausted from the chamber.
[0020] In some of these embodiments,
[0021] The first liquid processing step further includes: introducing the first gas into the chamber and simultaneously exhausting the first gas from the chamber;
[0022] The gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas.
[0023] In some embodiments, the first liquid is a cleaning liquid, and the second liquid is an etching liquid.
[0024] In some embodiments, the first gas is an oxygen-containing gas.
[0025] In a second aspect, an embodiment of the present application further provides a substrate processing device, comprising: a chamber and a controller,
[0026] The chamber is provided with a first air inlet pipeline, a second air inlet pipeline and an air outlet pipeline, wherein the first air inlet pipeline is used to introduce a first gas into the chamber; the second air inlet pipeline is used to introduce a second gas into the chamber, and the air outlet pipeline is used to exhaust gas from the chamber; the controller is used to control the substrate processing device to perform the substrate processing method as described in the first aspect.
[0027] In some of the embodiments, a recovery device is further included, which is connected to the gas outlet pipeline and is used to accommodate the recovered second gas.
[0028] In some of the embodiments, a filtering device is further included, which is arranged on the gas outlet pipeline and connected to the recovery device, and is used to filter the second gas exhausted from the chamber and allow the filtered second gas to enter the recovery device.
[0029] In some embodiments, the gas outlet pipeline includes a first gas outlet pipeline and a second gas outlet pipeline, wherein the first gas outlet pipeline is used to exhaust the first gas from the chamber, and the second gas outlet pipeline is used to exhaust the second gas from the chamber.
[0030] Compared with the related art, the substrate processing method and device provided in the embodiment of the present application include: a first liquid processing step: in a chamber in a first gas atmosphere, liquid processing is performed on the substrate by using a first liquid; a gas atmosphere replacement step: replacing the atmosphere of the chamber from the first gas atmosphere to a second gas atmosphere; a second liquid processing step: in a chamber in a second atmosphere, liquid processing is performed on the substrate by using a second liquid. The problem of waste of special gases in the related art is solved, waste of special gases is avoided, and costs are saved.
[0031] Details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more readily apparent. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0033] Figure 1 is a flow chart of a substrate processing method according to a first embodiment of the present application;
[0034] Figure 2 is a structural schematic diagram of a substrate processing device according to a second embodiment of the present application;
[0035] Figure 3 It is a structural schematic diagram of a substrate processing device according to the third embodiment of the present application. DETAILED DESCRIPTION
[0036] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application. In addition, it can also be understood that although the efforts made in this development process may be complex and lengthy, for ordinary technicians in the field related to the contents disclosed in the present application, some changes such as design, manufacturing or production based on the technical contents disclosed in the present application are only conventional technical means, and should not be understood as insufficient contents disclosed in the present application.
[0037] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those of ordinary skill in the art that the embodiments described in this application may be combined with other embodiments without conflict.
[0038] Unless otherwise defined, the technical terms or scientific terms involved in this application should be understood by people with ordinary skills in the technical field to which this application belongs. The words "one", "a", "a", "the" and the like involved in this application do not indicate a quantitative limitation, and may represent the singular or plural. The terms "include", "comprise", "have" and any of their variations involved in this application are intended to cover non-exclusive inclusions; for example, a process, method, system, product or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units that are not listed, or may also include other steps or units inherent to these processes, methods, products or devices. The words "connect", "connected", "coupled" and the like involved in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The "multiple" involved in this application refers to greater than or equal to two. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships, for example, "A and / or B" can represent: A exists alone, A and B exist at the same time, and B exists alone. The terms "first", "second", "third" and the like involved in the present application are merely used to distinguish similar objects and do not represent a specific ordering of the objects.
[0039] First embodiment
[0040] The present application provides a substrate processing method. Figure 1 FIG. 1 is a flow chart of a substrate processing method according to an embodiment of the present application. Figure 1 As shown, the method comprises the following steps:
[0041] First liquid processing step S102: In a chamber in a first gas atmosphere, liquid processing is performed on the substrate using a first liquid, wherein the first gas atmosphere means that there is only the first gas in the chamber.
[0042] In this embodiment, the first liquid may be a cleaning liquid; and the first gas may be an oxygen-containing gas.
[0043] Gas atmosphere replacement step S104: replacing the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere, wherein the second gas atmosphere means that there is only a second gas in the chamber, and the second gas is different from the first gas.
[0044] It should be noted that the starting time of replacing the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere in step S104 can be after the first liquid completes the liquid treatment of the substrate or during the liquid treatment of the substrate by the first liquid, which is not specifically limited in this embodiment.
[0045] Second liquid treatment step S106: In a chamber in a second gas atmosphere, liquid treatment is performed on the substrate using a second liquid, where the second liquid is different from the first liquid.
[0046] In some embodiments, the second liquid may be an etching solution; and the second gas may be a non-oxygen-containing gas.
[0047] It should be noted that in the substrate processing method of the present application, compared with the first liquid, the second liquid has higher requirements for the chamber atmosphere when liquid-treating the substrate. In other words, the first liquid can not only liquid-treat the substrate under the first gas atmosphere, but also liquid-treat the substrate under the second gas atmosphere, but the second liquid cannot liquid-treat the substrate under the first gas atmosphere. For example, in a specific example of an etching process for a substrate, the first liquid is deionized water and the second liquid is TMAH, wherein the chamber is in the first gas atmosphere when the deionized water performs a cleaning process (liquid treatment) on the substrate; when TMAH performs an etching process (liquid treatment) on the substrate, the chamber is in the second gas atmosphere. Compared with deionized water, the etching rate and effect of TMAH are greatly affected by the oxygen content in the chamber. For this reason, the second gas atmosphere needs to be a non-oxygen-containing gas atmosphere, that is, the second gas needs to use a non-oxygen-containing gas, such as a high-cost non-oxygen-containing gas such as nitrogen or a rare gas, so as to achieve etching of the substrate by TMAH in an oxygen-free environment. However, the cleaning efficiency and effect of deionized water are not affected by the oxygen content in the chamber, that is, the first gas can be selected not to use high-cost non-oxygen-containing gas, but to use low-cost gas such as compressed air, thereby saving the use of non-oxygen-containing gas in the entire etching process of the substrate and reducing the process cost.
[0048] It should be noted that the steps shown in the above process or the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although the logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a different order than here. For example, step S106 can be executed first, and then step S102, etc.
[0049] When performing the atmosphere replacement step S104, there may be a problem that the replacement time is too short, resulting in the first gas atmosphere in the chamber not being completely replaced by the second gas atmosphere, and part of the first gas still remains in the chamber. Therefore, in order to avoid the problem of incomplete atmosphere replacement due to the replacement time being too short, in some embodiments, in step S104, the replacement time used to replace the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere may be not less than the replacement critical time, wherein the replacement critical time is the minimum time used to make the chamber have only the second gas.
[0050] In addition, when executing the atmosphere replacement step S104, there may be a problem of waste of the second gas due to the replacement time being too long. Therefore, in order to avoid the problem of waste of the second gas due to the replacement time being too long, in step S104, the replacement time of the chamber's gas atmosphere from the first gas atmosphere to the second gas atmosphere is set to 1.3 to 1.5 times the replacement critical time.
[0051] In this embodiment, the replacement time of the gas atmosphere in the chamber is set according to the replacement critical time, so that the replacement time can be accurately controlled to avoid the replacement time being too long or too short.
[0052] In some embodiments, the gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas;
[0053] Specifically, the replacement critical time t can satisfy the following equation:
[0054]
[0055] Where V is the volume occupied by the gas in the chamber;
[0056] Q is the gas flow rate of the gas exhausted from the chamber in the gas atmosphere replacement step.
[0057] It should be noted that, combined with Figure 2 When the chamber 10 is provided with a fan 16, since the fan 16 is connected to the chamber 10, the volume of the chamber 10 actually includes the volume inside the fan. Therefore, the atmosphere replacement volume is the sum of the volumes of the fan and the chamber body.
[0058] In order to further improve the utilization rate of the second gas (non-oxygen-containing gas such as nitrogen or rare gas), in some embodiments, the substrate processing method of the present application also includes a step of recycling the second gas. Specifically, the second liquid processing step S106 also includes: introducing the second gas into the chamber, discharging the second gas from the chamber, and recycling the second gas discharged from the chamber. Therefore, by recycling the second gas discharged from the chamber during the second liquid processing step S106, the second gas can be recycled, the waste of the second gas can be avoided, and the utilization rate of the second gas can be improved.
[0059] In some embodiments, the second gas exhausted from the chamber may be filtered before being recycled. By filtering the second gas before recycling, other gases can be filtered, thereby improving the purity of the second gas.
[0060] It should be noted that the filtering method can achieve filtering of the second gas through a separation device or a gas purification device.
[0061] In some embodiments, the first liquid treatment step further includes: introducing a first gas into the chamber and exhausting the first gas from the chamber; the gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas. According to these embodiments, the introduction and exhaust of gas in the chamber is a continuous process, which is conducive to the control of gas transmission.
[0062] Second embodiment
[0063] The present application also provides a substrate processing device, which can be used to perform the substrate processing method described above. It should be noted that the substrate processing method described above can also be performed by any other device capable of implementing the method, and is not limited to the substrate processing device of the present application.
[0064] Figure 2 is a schematic structural diagram of a substrate processing device according to an embodiment of the present application, such as Figure 2 As shown, the device includes: a chamber 10 and a controller (not shown in the figure), the chamber 10 is provided with a first air inlet pipeline 11, a second air inlet pipeline 12 and an air outlet pipeline 13, wherein the first air inlet pipeline 11 is used to introduce the first gas into the chamber 10; the second air inlet pipeline 12 is used to introduce the second gas into the chamber 10; the air outlet pipeline 13 is used to exhaust the gas from the chamber 10; wherein a nozzle 18 is also provided in the chamber 10, for supplying the first liquid or the second liquid to the substrate 19; a fan 16 is provided in the chamber 10, and the first air inlet pipeline 11 and the second air inlet pipeline 12 are connected to the chamber 10 through the fan 16; a carrying platform 20 is also provided in the chamber 1, and the carrying platform 20 is used to carry the substrate 19.
[0065] The present application does not limit the specific locations of the first air inlet pipeline 11, the second air inlet pipeline 12 and the air outlet pipeline 13 on the chamber 10. Figure 2 As shown, the first air inlet pipeline 11 and the second air inlet pipeline 12 are arranged at the top of the chamber 10, and the air outlet pipeline 13 is arranged at the bottom of the chamber 10. Such an arrangement is conducive to the complete discharge and complete replacement of the gas.
[0066] In this embodiment, the controller is used to control the substrate processing apparatus to execute the substrate processing method of the first embodiment.
[0067] Specifically, in the first liquid processing step S102, the controller controls the first gas inlet line 11 to supply the first gas into the chamber 10, and controls the gas outlet line 13 to discharge the first gas from the chamber 10, so that the chamber 10 is in a first gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the first liquid to the substrate 19, so as to perform liquid processing on the substrate 19 with the first liquid.
[0068] In the gas atmosphere replacement step S104, the controller controls the second gas inlet pipeline 12 to supply the second gas to the chamber 10, and controls the gas outlet pipeline 13 to exhaust the gas from the chamber 10. At the same time, the controller also controls the first gas inlet pipeline 11 to be closed, so as to replace the atmosphere of the chamber 10 from the first gas atmosphere to the second gas atmosphere. It can be understood that in step S104, at the initial stage, the exhausted gas may still be the first gas, and as the second gas gradually increases, the exhausted gas includes both the first gas and the second gas.
[0069] In the second liquid processing step S106, the controller controls the second gas inlet line 12 to supply the second gas into the chamber 10, and controls the gas outlet line 13 to exhaust the second gas from the chamber 10, so that the chamber 10 is in a second gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the second liquid to the substrate 19, so as to perform liquid processing on the substrate 19 with the second liquid.
[0070] In addition, the device may also be provided with a recovery device (not shown in the figure), so that the controller can also recover the second gas discharged from the gas outlet pipeline 13 by controlling the recovery device while executing the second liquid processing step S106.
[0071] In some embodiments, the device may also be provided with a filtering device (not shown in the figure), which is arranged on the gas outlet pipeline and connected to the recovery device, for filtering the second gas discharged from the chamber 10 and allowing the filtered second gas to enter the recovery device.
[0072] It should be noted that the specific examples in this embodiment can refer to the examples described in the above method embodiments and optional implementation modes, and this embodiment will not be described in detail here.
[0073] Third embodiment
[0074] The present application also provides a substrate processing device. Figure 3 is a schematic diagram of the structure of a substrate processing device according to an embodiment of the present application, such as Figure 3 As shown, the only difference from the second embodiment is the gas outlet pipeline setting of the chamber. Specifically, in the third embodiment, the chamber 10 is provided with two gas outlet pipelines, namely the first gas outlet pipeline 14 and the second gas outlet pipeline 15, which can avoid the first gas from being retained in the second gas outlet pipeline 15, so that when the second gas is recovered through the second gas outlet pipeline 15, there is the first gas, which causes the problem of impure second gas recovery.
[0075] In this embodiment, the controller is used to control the substrate processing apparatus to execute the substrate processing method of the first embodiment.
[0076] Specifically, in the first liquid processing step S102, the controller controls the first gas inlet pipeline 11 to supply the first gas into the chamber 10, and controls the first gas outlet pipeline 14 to exhaust the first gas from the chamber 10, so that the chamber 10 is in the first gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the first liquid to the substrate 19, so as to perform liquid processing on the substrate 19 through the first liquid. Specifically, the controller can control the first gas outlet pipeline 14 to be turned on, and the second gas inlet pipeline 12 and the second gas outlet pipeline 15 to be turned off.
[0077] In the gas atmosphere replacement step S104, the controller controls the second gas inlet pipeline 12 to supply the second gas to the chamber 10, and controls the first gas outlet pipeline 14 to exhaust the gas from the chamber 10. At the same time, the controller also controls the first gas inlet pipeline 11 and the second gas outlet pipeline 15 to be closed, so as to replace the atmosphere of the chamber 10 from the first gas atmosphere to the second gas atmosphere. In this embodiment, the method of exhausting the gas through the first gas outlet pipeline 14 during the entire atmosphere process can avoid the problem that the steps S102, S104 and S106 share the same pipeline, and the first gas exists in the pipeline, which causes the second gas to be impure, so as to improve the purity of the second gas recovery.
[0078] In the second liquid processing step S106, the controller controls the second gas inlet pipeline 12 to supply the second gas into the chamber 10, and controls the second gas outlet pipeline 15 to discharge the second gas from the chamber 10. At the same time, the controller also controls the first gas inlet pipeline 11 and the first gas outlet pipeline 14 to be closed so that the chamber 10 is in the second gas atmosphere. At the same time, the controller controls the nozzle 18 to supply the second liquid to the substrate 19 so as to perform liquid processing on the substrate 19 with the second liquid.
[0079] In addition, the device may also be provided with a recovery device (not shown in the figure), and the controller may also recover the second gas exhausted from the chamber 10 through the second gas outlet pipeline 15 by controlling the recovery device while executing the second liquid processing step S106.
[0080] In some embodiments, the device may also be provided with a filtering device (not shown in the figure), which is arranged on the second gas outlet pipeline 15 and connected to the recovery device, for filtering the second gas discharged from the chamber 10 and allowing the filtered second gas to enter the recovery device.
[0081] In this embodiment, by setting a first gas outlet pipeline and a second gas outlet pipeline, in both the first liquid processing step S102 and the atmosphere replacement step S104, gas containing the first gas can be discharged from the chamber through the first gas outlet pipeline. After the chamber is completely replaced with the second gas atmosphere, when the second liquid processing step S106 is started, the chamber exhaust path is switched from the first gas outlet pipeline to the second gas outlet pipeline, and the second gas is recovered through the second gas outlet pipeline, thereby avoiding the problem of impure second gas caused by the presence of the first gas in the pipeline among steps S102, S104 and S106, thereby improving the recovery purity of the second gas.
[0082] It should be noted that the specific examples in this embodiment can refer to the examples described in the above method embodiments and optional implementation modes, and this embodiment will not be described in detail here.
[0083] Those skilled in the art should understand that the technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0084] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.
Claims
1. A substrate processing method, characterized in that: The method comprises: A first liquid treatment step: performing liquid treatment on the substrate by using a first liquid in a chamber in a first gas atmosphere, wherein the first gas atmosphere means that there is only the first gas in the chamber; A gas atmosphere replacement step: replacing the atmosphere of the chamber from the first gas atmosphere to a second gas atmosphere, wherein the second gas atmosphere means that there is only a second gas in the chamber, and the second gas is different from the first gas; A second liquid treatment step: performing liquid treatment on the substrate using a second liquid in the chamber in the second gas atmosphere, wherein the second liquid is different from the first liquid.
2. The substrate processing method according to claim 1, characterized in that: The second gas is a non-oxygen-containing gas.
3. The substrate processing method according to claim 1, characterized in that: In the gas atmosphere replacement step, the replacement time for replacing the atmosphere of the chamber from the first gas atmosphere to the second gas atmosphere is not less than the replacement critical time. The critical replacement time is the minimum time required for the chamber to contain only the second gas.
4. The substrate processing method according to claim 3, characterized in that: The gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas; The replacement critical time t satisfies the following equation: Wherein, V is the volume occupied by the gas in the chamber; Q is the gas flow rate of the gas exhausted from the chamber in the gas atmosphere replacement step.
5. The substrate processing method according to claim 1, characterized in that: The second liquid processing step further includes: introducing the second gas into the chamber, exhausting the second gas from the chamber, and recovering the second gas exhausted from the chamber.
6. The substrate processing method according to claim 5, characterized in that: Also includes: Before the second gas exhausted from the chamber is recovered, the second gas exhausted from the chamber is filtered.
7. The substrate processing method according to claim 5, characterized in that: The first liquid processing step further includes: introducing the first gas into the chamber and simultaneously exhausting the first gas from the chamber; The gas atmosphere replacement step further includes: exhausting gas from the chamber, the gas including any one of the first gas, a mixed gas of the first gas and the second gas, and the second gas.
8. The substrate processing method according to claim 1, characterized in that: The first liquid is a cleaning liquid, and the second liquid is an etching liquid.
9. The substrate processing method according to claim 1, characterized in that: The first gas is an oxygen-containing gas.
10. A substrate processing device, characterized in that: include: Chamber and controller, The chamber is provided with a first air inlet pipeline, a second air inlet pipeline and an air outlet pipeline, wherein the first air inlet pipeline is used to introduce a first gas into the chamber; the second air inlet pipeline is used to introduce a second gas into the chamber, and the air outlet pipeline is used to exhaust gas from the chamber; The controller is used to control the substrate processing apparatus to perform the substrate processing method according to any one of claims 1 to 9.
11. The substrate processing apparatus according to claim 10, wherein: It also includes a recovery device connected to the gas outlet pipeline and used for accommodating the recovered second gas.
12. The substrate processing apparatus according to claim 11, characterized in that: It also includes a filtering device, which is arranged on the gas outlet pipeline and connected to the recovery device, and is used for filtering the second gas discharged from the chamber and allowing the filtered second gas to enter the recovery device.
13. The substrate processing apparatus according to claim 10, wherein: The gas outlet pipeline includes a first gas outlet pipeline and a second gas outlet pipeline, wherein the first gas outlet pipeline is used to exhaust a first gas from the chamber, and the second gas outlet pipeline is used to exhaust a second gas from the chamber.