High-integration microwave transceiving assembly

Abstract

The invention discloses a high-integration microwave transceiving assembly, and belongs to the technical field of active phased-array antenna transceiving assemblies. According to the invention, the AlN HTCC substrate, the molybdenum copper or oxygen-free copper enclosure frame and the cover plate are adopted to form an integrated package, heat of the transceiving assembly can be dissipated through the solder balls at the bottom of the substrate, and multi-path heat conduction can be carried out to the side wall through the enclosure frame and to the heat dissipation part at the top through the cover plate, so that the package thermal resistance can be reduced greatly, the junction temperature of the chip is reduced, and the reliability of the package is improved. The chip reliability is improved; the types of chips in the transceiving assembly can be reduced from the six types to two types, so that the arrangement area of internal devices is effectively reduced, and the integration level of the transceiving assembly is improved; in addition, the reduced device arrangement area under the same packaging size can be used for increasing the side edge packaging thickness and improving the heat dissipation capability; by optimizing the circuit form, the types and the number of internal devices are reduced, the component cost is reduced, assembly is easy, and the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of active phased array antenna transceiver components, and in particular to a highly integrated microwave transceiver component. Background Art

[0002] As active phased array antenna systems are increasingly used in military and civilian fields such as aerospace, they are usually required to have small size, light weight, and high performance. This urgently requires them to develop in the direction of miniaturization and high integration. As the core component with the largest installed capacity, the performance of the transceiver component in the antenna system greatly restricts the performance of the entire antenna system. Especially for satellite-borne and airborne platforms with harsh load conditions, how to make the transceiver component as light and small as possible has become a problem that needs to be solved urgently.

[0003] In order to solve the problem of lightweight and miniaturized components, it is necessary to start from the functional characteristics of the transceiver components and optimize the design in combination with the internal circuit structure of the components. The main factors affecting the size of the component are the area required for the internal device layout and the packaging form of the component. The devices inside the transceiver component mainly include microwave chips, power control chips, ring isolators and peripheral resistors and capacitors. Microwave chips usually include limiters, low-noise amplifiers, compensation amplifiers, CNC phase shifters, CNC attenuators, transceiver switches, driver amplifiers and power amplifiers. Power control chips include wave control chips, receiving power modulation chips, gate voltage chips, transmitting power driver chips and transmitting power modulation MOS tube chips. The above devices are numerous and occupy a large amount of space inside the component, so they can be further optimized:

[0004] 1. Use transceiver switch chip instead of ring isolator;

[0005] 2. Integrate the limiter and low noise amplifier chip into a limiting low noise amplifier chip;

[0006] 3. Integrate the compensation amplifier, digitally controlled phase shifter, digitally controlled attenuator, transceiver switch, driver amplifier, wave control chip, etc. into an amplitude and phase multifunctional chip;

[0007] 4. The receiving power modulation chip, gate voltage chip and transmitting power driver chip are integrated into a multifunctional power modulation chip.

[0008] Through the above optimization, the original more than ten chips inside the component can be reduced to six chips, greatly reducing the area of ​​the device arrangement inside the component. Since the arrangement area is greatly reduced, the packaging form can also be transformed from component-level packaging to device-level packaging, and SM, QFP, QFN and BGA can be used. These packages can integrate the substrate and box body of the transceiver component, and eliminate the microwave and low-frequency connectors of the transceiver component package, greatly reducing the size of the package. The BGA package is more widely used because its RF interface can be designed as a quasi-coaxial structure and has better high-frequency microwave transmission characteristics.

[0009] Usually, the BGA package of the transceiver component uses alumina HTCC as the package substrate and Kovar alloy as the package frame. The two are welded by silver and copper to form a box body, and then the Kovar cover and the box body are welded by parallel seam welding to form an airtight integrated package. Although this package is small in size, light in weight, and easy to install, the thermal conductivity of the bottom alumina ceramic substrate is low. And when the transceiver component is used in the antenna array, it is usually installed on a composite dielectric board with low thermal conductivity. Therefore, the thermal resistance between the internal heat-generating chip of the component and the external heat dissipation surface is large, making heat dissipation difficult.

[0010] The above problems need to be solved urgently, and for this purpose, a highly integrated microwave transceiver component is proposed. Summary of the invention

[0011] The technical problem to be solved by the present invention is: how to make the transceiver component realize lightweight and miniaturized design while improving its heat dissipation performance, reducing the chip junction temperature, and improving the reliability of the transceiver component, thereby providing a highly integrated microwave transceiver component.

[0012] The present invention solves the above technical problems through the following technical solutions. The present invention comprises a cover plate, a surrounding frame, a substrate and a BGA solder ball which are arranged in sequence from top to bottom;

[0013] The lower surface of the cover plate is provided with a groove structure, forming a concave-convex structure with the partition wall arranged in the surrounding frame;

[0014] The surrounding frame and the base plate together form a box body, and a partition wall is provided inside the surrounding frame;

[0015] The substrate is multi-layered, with microwave signal vertical interconnection circuits, control signal interconnection circuits and power distribution networks on the inner layer, amplitude and phase multifunctional chips, transceiver multifunctional chips and resistor and capacitor components on the surface layer, and the substrate is vertically interconnected with external interfaces through BGA solder balls;

[0016] The BGA solder balls are arranged on the lower surface of the substrate.

[0017] Furthermore, the frame is made of molybdenum copper or oxygen-free copper material, the bottom of the frame and the substrate are welded by silver-copper to form a box body, and the top of the frame and the cover are welded by gold-tin to achieve airtight packaging.

[0018] Furthermore, the substrate is an AlN HTCC substrate with 5 to 20 layers.

[0019] Furthermore, a transceiver multifunctional substrate is provided on the base plate, which is made of molybdenum copper or oxygen-free copper material and is used for welding the transceiver multifunctional chip.

[0020] Furthermore, in the case where the highly integrated microwave transceiver assembly includes n transceiver channels, a transceiver multifunctional chip and an amplitude and phase multifunctional chip are provided on the upper surface of the substrate for each transceiver channel, wherein n≥1;

[0021] The transceiver common ports of the transceiver multifunctional chips in the n transceiver channels are interconnected with the external interface through the AlN HTCC substrate and the BGA solder balls;

[0022] The receiving output port and transmitting input port of the transceiver multifunctional chip in the n transceiver channels are interconnected with the receiving input port and transmitting output port of the amplitude and phase multifunctional chip of the n channel through the surface of the AlN HTCC substrate, and finally the input and output are synthesized through the total port of the amplitude and phase multifunctional chip. The total port signal is interconnected with the external interface through the AlN HTCC substrate and the BGA solder ball.

[0023] Furthermore, the transceiver multifunctional chip includes a switch circuit, a limiter circuit, a low-noise amplifier circuit and a power amplifier circuit.

[0024] Furthermore, the power amplifier circuit inside the transceiver multifunctional chip adopts an enhancement transistor circuit, and the gate is adjusted in the form of TTL or LVTTL level to perform transmission pulse power modulation.

[0025] Furthermore, the amplitude-phase multifunctional chip has microwave circuits of n-channel phase shifting, attenuation, transmit-receive switching, compensation amplification and 1:n synthesis network, and integrates data serial-to-parallel conversion circuit, logic judgment protection circuit, receiving power modulation circuit and transmitting drive circuit.

[0026] Compared with the prior art, the present invention has the following advantages:

[0027] 1. The transceiver assembly of the present invention uses AlN HTCC substrate, molybdenum copper or oxygen-free copper frame and cover plate to form an integrated package. The thermal conductivity of the aluminum nitride substrate of this packaging structure is usually greater than 170W / (mK), which is nearly 10 times higher than the thermal conductivity of the aluminum oxide substrate, and is more conducive to the heat dissipation of internal devices. In addition, the thermal conductivity of the molybdenum copper or oxygen-free copper material of the package frame and cover plate is at least 160W / (mK), which is also much higher than the 21W / (mK) of the Kovar material. Therefore, in addition to dissipating the heat of the transceiver assembly through the solder balls at the bottom of the substrate, it can also be multi-path heat conduction through the frame to the side wall and through the cover plate to the top heat dissipation component, which can greatly reduce the thermal resistance of the package, reduce the chip junction temperature, and improve the chip reliability.

[0028] 2. The transceiver component of the present invention adopts a transceiver multifunctional chip including a limiter, a low noise amplifier and a power amplifier, and the power amplifier of the transceiver multifunctional chip directly performs pulse modulation using the TTL or LVTTL level generated by the amplitude and phase multifunction, eliminating the negative gate voltage generation circuit, the transmission power drive and the transmission power MOS tube; the types of chips inside the transceiver component can be reduced from the previous 6 to 2, effectively reducing the layout area of ​​the internal devices and improving the integration of the transceiver component; in addition, the reduced device layout area under the same package size can be used to increase the side package thickness and improve the heat dissipation capacity.

[0029] 3. The transceiver assembly of the present invention reduces the types and quantities of internal devices by optimizing the circuit form, which not only reduces the cost of components, but also facilitates assembly and helps reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Schematic diagram of the internal circuit of a four-channel highly integrated transceiver assembly in an embodiment of the present invention;

[0031] Figure 2 for Figure 1 A partial enlarged view of the middle A part;

[0032] Figure 3 for Figure 1 A partial enlarged view of part B in the middle;

[0033] Figure 4 Schematic diagram of the structure of a four-channel highly integrated transceiver assembly in an embodiment of the present invention. DETAILED DESCRIPTION

[0034] The following is a detailed description of an embodiment of the present invention. This embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation method and a specific operation process are given, but the protection scope of the present invention is not limited to the following embodiment.

[0035] This embodiment provides a technical solution: a highly integrated microwave transceiver component, such as Figure 1 As shown, a highly integrated microwave transceiver component with four transceiver channels is taken as an example for a detailed introduction.

[0036] The four transceiver channels are integrated into a BGA package on an AlN HTCC substrate to achieve functions such as four-channel transceiver amplification and phase shift attenuation.

[0037] Figure 1 This is a principle block diagram of a four-channel highly integrated microwave transceiver assembly according to an embodiment of the present invention:

[0038] The transceiver component mainly includes: a transceiver multifunctional chip and a 4-channel amplitude and phase multifunctional chip.

[0039] The transceiver multifunctional chip consists of a switch circuit, a limiter circuit, a low-noise amplifier circuit and a power amplifier circuit, replacing the switch chip, the limiter low-noise amplifier chip and the power amplifier chip. Compared with the previous three devices, it reduces the board area, simplifies the number of gold wire interconnections, and improves system reliability.

[0040] The power amplifier circuit inside the transceiver multifunctional chip adopts an enhanced transistor circuit, and uses TTL or LVTTL level to adjust the gate for transmitting pulse power modulation.

[0041] In addition to the microwave circuits of 4-channel phase shift, attenuation, transceiver switch, compensation amplification and 1:4 synthesis network, the 4-channel amplitude-phase multifunctional chip also integrates data serial-to-parallel conversion circuit, logic judgment protection circuit, receiving power modulation circuit, transmitting modulation drive circuit, etc. Among them, the receiving power modulation circuit can directly provide the required receiving pulse modulation power for the low noise amplifier circuit of the transceiver multifunctional chip. The transmitting modulation drive circuit can generate TTL or LVTTL level and directly provide the driving signal for the transmitting pulse modulation required by the power amplifier circuit of the transceiver multifunctional chip. Compared with the traditional solution, the 4-channel negative gate voltage generation circuit, the transmitting power drive and the transmitting power MOS tube circuit can be omitted, which effectively reduces the layout area of ​​the internal devices and improves the integration of the transceiver components. In addition, the reduced device layout area can be used to increase the side package thickness and improve the heat dissipation capacity.

[0042] The transmit-receive common ports of the transmit-receive multifunctional chips in the four transmit-receive channels are interconnected with the external interface through the AlN HTCC substrate and the BGA solder balls;

[0043] The receiving output port and transmitting input port of the transceiver multifunctional chip in the four transceiver channels are interconnected with the receiving input port and transmitting output port of the four-channel amplitude and phase multifunctional chip through the surface of the AlN HTCC substrate, and finally the input and output are synthesized through the main port of the amplitude and phase multifunctional chip. The main port signal is interconnected with the external interface through the AlN HTCC substrate and BGA solder balls.

[0044] Figure 4 This is a schematic diagram of the structure of the above four-channel highly integrated radar transceiver assembly in this embodiment, which specifically includes the following structure:

[0045] The cover plate 1 is made of molybdenum copper or oxygen-free copper material. The lower surface of the cover plate has a groove structure, which can form a concave-convex structure with the partition wall in the frame to improve the electromagnetic shielding effect.

[0046] The frame 2 is made of molybdenum copper or oxygen-free copper material, and can form a box body together with the AlN HTCC substrate 4. The frame 2 has partition walls inside, which can improve the isolation between channels inside the component and the electromagnetic shielding inside the channel.

[0047] The transceiver multifunctional substrate 3 is made of molybdenum copper or oxygen-free copper material to ensure that the power amplifier is highly matched with the transmission line, and at the same time has good heat dissipation capability and thermal matching between chips.

[0048] AlN HTCC substrate 4, with a total of 7 layers, the inner layer contains microwave signal vertical interconnection circuits, control signal interconnection circuits and power distribution networks, and the surface layer is provided with amplitude and phase multifunctional chips, transceiver multifunctional chips and resistors and capacitors and other devices;

[0049] BGA solder balls 5 are disposed on the lower surface of the substrate 4 and are used to connect the component with external signals.

[0050] During the assembly process, the frame 2 is first welded to the upper surface of the AlN HTCC substrate 4 by silver-copper welding to form a box body with an airtight structure. The multifunctional chip for transmitting and receiving is eutectic welded to the substrate 3, and then soldered together in the box body by lead-tin. The remaining chips and components are fixed to the AlN HTCC substrate 4 by conductive adhesive, and then electrically connected by gold wire bonding. After the commissioning is completed, the cover plate 1 is covered on the box body, and the welding between the two is achieved by gold-tin soldering to achieve airtight packaging.

[0051] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A highly integrated microwave transceiver component, characterized in that: It includes a cover plate, a surrounding frame, a substrate and BGA solder balls which are arranged in sequence from top to bottom; The lower surface of the cover plate is provided with a groove structure, forming a concave-convex structure with the partition wall arranged in the surrounding frame; The surrounding frame and the base plate together form a box body, and a partition wall is provided inside the surrounding frame; The substrate is multi-layered, with microwave signal vertical interconnection circuits, control signal interconnection circuits and power distribution networks on the inner layer, amplitude and phase multifunctional chips, transceiver multifunctional chips and resistor and capacitor components on the surface layer, and the substrate is vertically interconnected with external interfaces through BGA solder balls; The BGA solder balls are arranged on the lower surface of the substrate.

2. The highly integrated microwave transceiver assembly according to claim 1, characterized in that: The frame is made of molybdenum copper or oxygen-free copper material, the bottom of the frame and the substrate are welded with silver copper to form a box body, and the top of the frame and the cover are welded with gold tin to form an airtight package.

3. The highly integrated microwave transceiver assembly according to claim 1, characterized in that: The substrate is an AlN HTCC substrate with 5 to 20 layers.

4. The highly integrated microwave transceiver assembly according to claim 1, characterized in that: The base plate is provided with a transceiver multifunctional substrate, which is made of molybdenum copper or oxygen-free copper material and is used for welding a transceiver multifunctional chip.

5. The highly integrated microwave transceiver assembly according to claim 1, characterized in that: In the case where the highly integrated microwave transceiver assembly includes n transceiver channels, a transceiver multifunctional chip and an amplitude and phase multifunctional chip are provided on the upper surface of the substrate for each transceiver channel, where n≥1; The transceiver common ports of the transceiver multifunctional chips in the n transceiver channels are interconnected with the external interface through the AlN HTCC substrate and the BGA solder balls; The receiving output port and transmitting input port of the transceiver multifunctional chip in the n transceiver channels are interconnected with the receiving input port and transmitting output port of the amplitude and phase multifunctional chip of the n channel through the surface of the AlN HTCC substrate, and finally the input and output are synthesized through the total port of the amplitude and phase multifunctional chip. The total port signal is interconnected with the external interface through the AlN HTCC substrate and the BGA solder ball.

6. The highly integrated microwave transceiver assembly according to claim 5, characterized in that: The transceiver multifunctional chip comprises a switch circuit, a limiter circuit, a low noise amplifier circuit and a power amplifier circuit.

7. The highly integrated microwave transceiver assembly according to claim 6, characterized in that: The power amplifier circuit inside the transceiver multifunctional chip adopts an enhanced transistor circuit, and uses TTL or LVTTL level to adjust the gate to perform transmission pulse power supply modulation.

8. The highly integrated microwave transceiver assembly according to claim 5, characterized in that: The amplitude-phase multifunctional chip has n-channel phase shifting, attenuation, transceiver switching, compensation amplification and 1:n synthesis network microwave circuits, and also integrates data serial-to-parallel conversion circuit, logic judgment protection circuit, receiving power modulation circuit and transmitting drive circuit.

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