Photoelectric sensor assembly and preparation method thereof, readout circuit structure and photoelectric structure

Abstract

The invention relates to a photoelectric sensor assembly and a preparation method thereof, a readout circuit structure and a photoelectric structure. The photoelectric sensor assembly comprises a readout circuit structure and at least one photoelectric structure. The readout circuit structure is provided with a first surface and at least one readout unit, and the first surface of each readout unit is provided with a first welding bump setting area and a first peripheral area; each photoelectric structure is correspondingly bonded on one readout unit to form one photoelectric sensor unit, the photoelectric structure is provided with a third surface, and the third surface is provided with a second welding bump setting area and a second peripheral area; in each photoelectric sensor unit, strip-shaped protrusions are arranged in peripheral areas on the two opposite sides of the first welding protruding point arrangement area and the second welding protruding point arrangement area.

Description

Technical Field

[0001] The present application relates to the field of infrared detection technology, and in particular to a photoelectric sensor component and a preparation method thereof, a readout circuit structure and a photoelectric structure. Background Art

[0002] Microelectronic devices, such as infrared detection devices, need to bond the solder bumps of the infrared photodetector and the readout circuit unit to achieve electrical connection, and fill the gap between the two with primer after bonding. The filling effect of primer directly affects the performance of solder bumps and device resistance to external forces. Summary of the invention

[0003] The present application provides a photoelectric sensor assembly, which includes:

[0004] A readout circuit structure has a first surface and at least one readout unit, wherein the first surface of each readout unit has a first solder bump setting area and a first peripheral area located outside the first solder bump setting area;

[0005] At least one optoelectronic structure, each optoelectronic structure is bonded to a readout unit and forms an optoelectronic sensor unit with the corresponding readout unit, the optoelectronic structure having a third surface, the third surface having a second solder bump setting area located in the middle and opposite to the first solder bump setting area, and a second peripheral area located at the periphery of the second solder bump setting area and opposite to the first peripheral area;

[0006] Wherein, in each photoelectric sensor unit, a strip-shaped protrusion is provided in the peripheral area located on two opposite sides of the first welding bump arrangement area and the second welding bump arrangement area.

[0007] In some embodiments, the first welding bump arrangement area is provided with a plurality of first welding bumps arranged in an array, the second welding bump arrangement area is provided with a plurality of second welding bumps corresponding to the plurality of first welding bumps one by one, and the first welding bump and the second welding bump have a first thickness T1 and a second thickness T2 respectively in the thickness direction of the photoelectric sensor assembly;

[0008] The strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, the strip protrusion arranged in the first peripheral area has a first protrusion thickness t1 in the thickness direction of the photoelectric sensor component, and the strip protrusion arranged in the second peripheral area has a second protrusion thickness t2 in the thickness direction of the photoelectric sensor component; wherein the first protrusion thickness t1, the second protrusion thickness t2, the first thickness T1 and the second thickness T2 satisfy the relationship: t1+t2≤T1+T2; or,

[0009] There is one strip-shaped protrusion located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit, one of the strip-shaped protrusions is arranged on one of the first peripheral area and the second peripheral area, and one of the strip-shaped protrusions has a third protrusion thickness t3 in the thickness direction of the photoelectric sensor component; wherein the third protrusion thickness t3, the first thickness T1 and the second thickness T2 satisfy the relationship: t3<T1+T2.

[0010] In some embodiments, when the strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photosensor unit are two strip protrusions respectively provided in the first peripheral area and the second peripheral area and facing each other, the facing spacing distance between the strip protrusion provided in the first peripheral area and the strip protrusion provided in the second peripheral area is less than 2 μm;

[0011] When there is one strip-shaped protrusion located on the same side of the first solder bump arrangement region and the second solder bump arrangement region included in the photoelectric sensor unit, the spacing distance between the strip-shaped protrusion and the corresponding peripheral region is less than 2 μm.

[0012] In some embodiments, when the strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, the width of the two strip protrusions is greater than twice the alignment accuracy when the readout circuit structure and the photoelectric structure are bonded.

[0013] In some embodiments, the first welding bump arrangement area is provided with a plurality of first welding bumps arranged in an array, and the second welding bump arrangement area is provided with a plurality of second welding bumps corresponding to the plurality of first welding bumps one by one;

[0014] The distance between each two adjacent welding bumps among the plurality of the first welding bumps is a first distance, and the distance between the strip-shaped bump and the first welding bump closest to the strip-shaped bump is a second distance; wherein the second distance is smaller than the first distance.

[0015] In some embodiments, the strip-shaped protrusions are made of one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials.

[0016] In some embodiments, a glue application area is provided in the first peripheral area located on one side of the first welding bump setting area and the second welding bump setting area, wherein both sides where the strip-shaped protrusion is provided are adjacent to one side where the glue application area is provided.

[0017] In some embodiments, each of the first peripheral regions is provided with a plurality of lead-out pads, and when at least some of the lead-out pads and at least one side of the strip-shaped protrusion are located on the same side of the first solder bump setting region, among the lead-out pads and the strip-shaped protrusion located on the same side of the first solder bump setting region, the lead-out pads are located on the side of the strip-shaped protrusion away from the first solder bump setting region; or,

[0018] Each of the first peripheral areas is provided with a plurality of lead pads. When at least some of the lead pads are located on the same side as the glue application area, the lead pads located at the same end as the glue application area are located on the side of the glue application area away from the first solder bump setting area.

[0019] In some embodiments, an extension direction of the glue application area is perpendicular to an extension direction of the strip-shaped protrusions.

[0020] In some embodiments, the glue application area is directly opposite to the first welding bump setting area;

[0021] The length l1 of the readout unit corresponding to the glue application area in the extending direction of the glue application area and the length l2 of the glue application area have the following relationship: 1 / 2l1≤l2≤2 / 3l1.

[0022] In some embodiments, the first welding bump setting area is provided with a plurality of first welding bumps arranged in an array, the second welding bump setting area is provided with a plurality of second welding bumps corresponding one-to-one to the plurality of first welding bumps, and there is a spacing space between the readout circuit structure and the photoelectric structure readout unit outside the first welding bump and the second welding bump, and the photoelectric sensor assembly includes a base glue located in the spacing space.

[0023] The present application further provides a method for preparing a photoelectric sensor assembly, which comprises:

[0024] A readout circuit structure is provided, wherein the readout circuit structure has a first surface and at least one readout unit, wherein the first surface of each readout unit has a first solder bump setting area and a first peripheral area located outside the first solder bump setting area;

[0025] Providing at least one optoelectronic structure, and bonding each optoelectronic structure to a corresponding readout unit to form an optoelectronic sensor assembly including at least one optoelectronic sensor unit, each optoelectronic sensor unit including an optoelectronic structure and a corresponding readout unit, the optoelectronic structure having a third surface, the third surface having a second solder bump arrangement area located in the middle and opposite to the first solder bump arrangement area, and a second peripheral area located at the periphery of the second solder bump arrangement area and opposite to the first peripheral area;

[0026] Wherein, in each photoelectric sensor unit, a strip-shaped protrusion is provided in the peripheral area located on two opposite sides of the first welding bump arrangement area and the second welding bump arrangement area.

[0027] In some embodiments, after bonding each optoelectronic structure to a corresponding readout unit, the method includes:

[0028] A primer is filled in the spacing space between the readout circuit structure and the optoelectronic structure.

[0029] In some embodiments, the first peripheral area located on one side of the first welding bump setting area is provided with a glue application area, wherein both sides of the strip-shaped protrusion are adjacent to the side of the glue application area; and the filling of the primer in the interval between the readout circuit structure and the optoelectronic structure includes:

[0030] Applying primer to the glue application area of ​​the photoelectric sensor assembly at room temperature;

[0031] Placing the photoelectric sensor assembly with the primer applied thereto in a vacuum environment, and preliminarily heating it to a first temperature so that the primer fills the spacing space between the readout circuit structure and the photoelectric structure;

[0032] Continue heating to a second temperature to solidify the primer.

[0033] In some embodiments, when the photoelectric sensor assembly with the primer applied thereto is placed in a vacuum environment and preliminarily heated to a first temperature so that the primer fills the spacing space between the readout circuit structure and the photoelectric structure, the method further comprises:

[0034] The end of the photoelectric sensor assembly facing away from the glue application area is tilted downward at a preset angle.

[0035] The present application further provides a readout circuit structure, the readout circuit structure having a first surface and comprising at least one readout unit;

[0036] The readout unit has a first welding bump setting area located in the middle and a first peripheral area located outside the first welding bump setting area, and strip protrusions are provided on one side or two opposite sides of the first welding bump setting area in the first peripheral area.

[0037] In some embodiments, the first welding bump arrangement area is provided with a plurality of first welding bumps arranged in an array; the distance between the strip-shaped protrusion and the first welding bump closest to the strip-shaped protrusion is smaller than the distance between each adjacent two first welding bumps among the plurality of the first welding bumps;

[0038] The material of the strip-shaped protrusions is one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials.

[0039] The present application further provides a photoelectric structure, which has a third surface, wherein the third surface has a second welding bump setting area located in the middle, and a second peripheral area located outside the second welding bump setting area, wherein a strip-shaped protrusion is provided on one side or on two opposite sides of the second welding bump setting area.

[0040] In some embodiments, the second welding bump arrangement area is provided with a plurality of second welding bumps arranged in an array; the distance between the strip-shaped protrusion and the second welding bump closest to the strip-shaped protrusion is smaller than the distance between each adjacent two second welding bumps among the plurality of second welding bumps;

[0041] The material of the strip-shaped protrusions is one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials.

[0042] The photoelectric sensor assembly provided in the embodiment of the present application, by setting strip protrusions between the photoelectric structure and the corresponding read-out unit and located on opposite sides of the first welding bump setting area and the second welding bump setting area in a first direction, when filling the base glue, the base glue can be spread more evenly in the welding bump setting area, and the occurrence of bubbles in the base glue due to too fast spreading speed in the edge area during the base glue filling can be avoided, thereby improving the effect of base glue filling.

[0043] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the drawings required for use in the embodiments or the related technical descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0045] Figure 1 A cross-sectional view of a photoelectric sensor assembly provided in one embodiment of the present application;

[0046] Figure 2 A schematic top view of an intermediate photoelectric sensor assembly provided in one embodiment of the present application;

[0047] Figure 3 For along Figure 2 A cross-sectional view taken along the section line AA' shown;

[0048] Figure 4 For along Figure 2 A cross-sectional view taken along the section line BB' shown;

[0049] Figure 5 A top view of a readout circuit structure provided in one embodiment of the present application;

[0050] Figure 6 A top view of a photoelectric structure provided in one embodiment of the present application;

[0051] Figure 7 A schematic top view of another intermediate photoelectric sensor assembly provided by an embodiment of the present application;

[0052] Figure 8 A top view of another readout circuit structure provided in an embodiment of the present application;

[0053] Fig. 9 A top view of another optoelectronic structure provided in one embodiment of the present application;

[0054] Fig.10 A schematic top view of another intermediate photoelectric sensor assembly provided in an embodiment of the present application;

[0055] Fig.11 A method flow chart of a method for preparing a photoelectric sensor component provided in one embodiment of the present application;

[0056] Figures 12 to 20 A preparation process diagram of a method for preparing a photoelectric sensor component provided in one embodiment of the present application. DETAILED DESCRIPTION

[0057] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0058] The present application provides a photoelectric sensor assembly, which includes a readout circuit structure and at least one photoelectric structure. The readout circuit structure has a first surface and at least one readout unit, and the first surface of each readout unit has a first welding bump setting area and a first peripheral area located outside the first welding bump setting area; each of the photoelectric structures is bonded to a readout unit, and forms a photoelectric sensor unit with the corresponding readout unit, and the photoelectric structure has a third surface and, and the third surface has a second welding bump setting area located in the middle and opposite to the first welding bump setting area, and a second peripheral area located outside the second welding bump setting area and opposite to the first peripheral area; wherein, in each photoelectric sensor unit, the peripheral areas located on opposite sides of the first welding bump setting area and the second welding bump setting area are provided with strip-shaped protrusions. The photoelectric sensor component, by arranging strip protrusions between the photoelectric structure and the corresponding read-out unit and located on opposite sides of the first welding bump setting area and the second welding bump setting area in the first direction, can spread the base glue more evenly in the welding bump setting area when filling the base glue, and can effectively avoid the occurrence of bubbles in the base glue due to too fast spreading speed in the edge area when filling the base glue, thereby improving the effect of base glue filling.

[0059] The following is combined with Figures 1 to 20 The photoelectric sensor assembly and its preparation method, readout circuit structure and photoelectric structure provided in the present application are described in detail.

[0060] First, please refer to Figure 1 , and when necessary, combine Figures 2 to 10 As shown, the present application provides a photoelectric sensor assembly 1000 , which includes a readout circuit structure 1 , at least one photoelectric structure 20 , and a primer 30 filled in a spacing space 101 between the readout circuit structure 1 and the photoelectric structure 20 .

[0061] The readout circuit structure 1 has a readout circuit structure body 11. The readout circuit structure body 11 has a first surface S1 and a second surface S2 that are separated from each other, and has at least one readout unit 10. The first surface S1 of each readout unit 10 has a first solder bump setting area Q1 and a first peripheral area Q2 located outside the first solder bump setting area Q1. The first solder bump setting area Q1 of the readout circuit structure body 11 is provided with a plurality of first solder bumps 12 arranged in an array.

[0062] Each optoelectronic structure 20 is bonded to a corresponding readout unit 10, and forms a photoelectric sensor unit with the corresponding readout unit 10. The optoelectronic structure 20 has an optoelectronic structure body 21. The optoelectronic structure body 21 has a third surface S3 and a fourth surface S4 that are separated from each other. The third surface S3 has a second solder bump setting area Q3 located in the middle and opposite to the first solder bump setting area Q1, and a second peripheral area Q4 located at the periphery of the second solder bump setting area Q3 and opposite to the first peripheral area Q2. The second solder bump setting area Q3 of the optoelectronic structure body 21 is provided with a plurality of second solder bumps 22 corresponding to the plurality of first solder bumps 12. Each first solder bump 12 is bonded to the corresponding second solder bump 22 to achieve electrical connection.

[0063] There is a spacing space 101 between the readout circuit structure 1 and the optoelectronic structure 20, which is located outside the first solder bump 12 and the second solder bump 22. The primer 30 is disposed in the spacing space 101 in the optoelectronic sensor assembly 1000.

[0064] In each photoelectric sensor unit, strip-shaped protrusions are provided in the peripheral areas on opposite sides of the first solder bump arrangement area Q1 and the second solder bump arrangement area Q3, such as Figure 1 The strip-shaped protrusions 23 and 13 are shown on opposite sides of the first welding bump arrangement area Q1 and the second welding bump arrangement area Q3. The primer 30 is also located between the strip-shaped protrusions on opposite sides.

[0065] It should be noted that Figure 1 The photoelectric sensor assembly 1000 shown has a readout circuit structure 1 including a readout unit 10, and a corresponding photoelectric structure 20. In some other embodiments, the readout circuit of the sensor assembly may include multiple readout units, and accordingly, may include multiple photoelectric structures bonded to each readout unit.

[0066] In some embodiments, the strip protrusions located on the same side of the first welding bump setting area Q1 and the second welding bump setting area Q3 included in the photosensor unit are two strip protrusions respectively arranged in the first peripheral area Q2 and the second peripheral area Q4 and facing each other.

[0067] for example Figures 3 to 6 As shown, in some embodiments, the first peripheral area Q2 included in the readout unit 10 is provided with two strip-shaped protrusions 13 located on opposite sides of the first welding bump setting area Q1 of the same readout unit 10, that is, two strip-shaped protrusions 13 at opposite ends in the width direction W1 of the readout circuit structure. The second peripheral area Q4 included in the optoelectronic structure 20 is provided with two strip-shaped protrusions 23 located on opposite sides of the second welding bump setting area Q3 of the same optoelectronic structure 20, that is, two strip-shaped protrusions 23 at opposite ends in the width direction W2 of the optoelectronic structure 20. The two strip-shaped protrusions 13 in the first peripheral area Q2 and the two strip-shaped protrusions 23 in the second peripheral area Q4 extend along their respective length directions L1 and L2, and are respectively arranged opposite to each other. In the intermediate photoelectric sensor assembly 100 and the photoelectric sensor assembly 1000 formed by bonding the photoelectric structure 20 to the corresponding readout unit 10, the width direction W1 of the readout circuit structure 1 is consistent with the width direction W2 of the photoelectric structure 20, and the width directions of the two are consistent with the second direction W of the photoelectric sensor assembly 1000 and the intermediate photoelectric sensor assembly 100. The length direction L1 of the readout circuit structure 1 is consistent with the length direction L2 of the photoelectric structure 20, and the length directions of the two are consistent with the first direction L of the photoelectric sensor assembly 1000 and the intermediate photoelectric sensor assembly 100. That is, in the intermediate photoelectric sensor assembly 100, the two strip-shaped protrusions 13 in the same readout unit 10 are located on the opposite sides of the corresponding first welding bump setting area Q1 (that is, the opposite ends in the second direction). The two strip-shaped protrusions 23 in the photoelectric structure 20 are located on the opposite sides of the included second welding bump setting area Q3 (that is, the opposite ends in the second direction). The strip-shaped protrusions 13 and 23 can both extend along the first direction L of the photoelectric sensor assembly. The corresponding photoelectric sensor assembly 1000 is formed when the primer 30 is filled in the middle photoelectric sensor assembly 100 .

[0068] In this embodiment, the first direction L may be a direction corresponding to the length directions L1 and L2 of the readout unit 10 and the optoelectronic structure 20. Accordingly, the direction between the two sides of the first direction L, i.e., the second direction W, may correspond to the width directions W1 and W2 of the readout unit 10 and the optoelectronic structure 20, respectively.

[0069] It should be noted that the first direction L and the second direction W of the present application are preferably perpendicular to each other. Correspondingly, the length direction L1 and the width direction W1 of the readout unit are perpendicular to each other, and the length direction L2 and the width direction W2 of the optoelectronic structure are perpendicular to each other. Of course, in some other embodiments, the first direction L and the direction W may also have a non-right angle.

[0070] For example Figures 7 to 9 As shown, in other embodiments, the first peripheral area Q2 included in the readout unit 10 is provided with two strip-shaped protrusions 13 located on opposite sides of the first welding bump setting area Q1 of the same readout unit 10, that is, two strip-shaped protrusions 13 at opposite ends in the length direction L1 of the readout circuit structure. The second peripheral area Q4 included in the optoelectronic structure 20 is provided with two strip-shaped protrusions 23 located on opposite sides of the same optoelectronic structure 20, that is, two strip-shaped protrusions 23 at opposite ends of the second welding bump setting area Q3 in the length direction L2 of the optoelectronic structure. The two strip-shaped protrusions 13 in the first peripheral area Q2 and the two strip-shaped protrusions 23 in the second peripheral area Q4 extend along their respective width directions L1 and L2, and are respectively arranged opposite to each other. Correspondingly, in the intermediate optoelectronic sensor assembly 200, the two strip-shaped protrusions 13 in the same readout unit 10 are located on opposite sides of the first welding bump setting area Q1 included in the readout unit 10, that is, located at opposite ends in the first direction L. The two strip-shaped protrusions 23 in the optoelectronic structure 20 are located at opposite sides of the included second solder bump setting area Q3, that is, at opposite ends of the first direction L. In this embodiment, the width direction W1 of the readout unit 10' (that is, the width direction of the readout circuit structure) is consistent with the width direction W2 of the optoelectronic structure 20', and the width directions of the two are consistent with the first direction L of the optoelectronic sensor assembly 1000 and the intermediate optoelectronic sensor assembly 200. The length direction L1 of the readout unit 10' (the length direction of the readout circuit structure) is consistent with the length direction L2 of the optoelectronic structure 20, and the length directions of the two are consistent with the second direction W of the optoelectronic sensor assembly 1000 and the intermediate optoelectronic sensor assembly 200.

[0071] In this embodiment, the first direction L is regarded as a direction corresponding to the width directions W1 and W2 of the readout unit 10 and the optoelectronic structure 20 , respectively. Accordingly, the second direction W may correspond to the length directions L1 and L2 of the readout unit 10 and the optoelectronic structure 20 , respectively.

[0072] In other embodiments, there is one strip protrusion located on the same side of the first welding bump setting area Q1 and the second welding bump setting area Q3 included in the photoelectric sensor unit, and one of the strip protrusions is arranged on one of the first peripheral area Q2 and the second peripheral area Q4.

[0073] for example Fig.10As shown, in some embodiments, the first peripheral area Q2 is provided with two strip protrusions 13 located on opposite sides (i.e. opposite ends in the second direction W) of the corresponding first welding bump setting area Q1 on the photoelectric sensor component, and the strip protrusions 13 extend along the first direction L of the photoelectric sensor component. That is, the strip protrusions are only provided in the readout unit 10" of the readout circuit structure 1.

[0074] Fig.10 In the illustrated embodiment, the strip-shaped protrusion 13 may extend along the length direction L1 of the readout unit 10. In addition, in some other embodiments, the strip-shaped protrusion may be provided only in the readout unit of the readout circuit structure, and the two strip-shaped protrusions extend along the width direction of the readout unit and are located at opposite ends of the first welding bump setting area Q1 in the length direction of the readout unit. Alternatively, two opposite strip-shaped protrusions may be provided only on the optoelectronic structure. The specific position of the strip-shaped protrusion may be similar to the setting position of the strip-shaped protrusion in the readout unit of the readout circuit structure 1. Alternatively, one of the two protrusion structures located on opposite sides is provided on the optoelectronic structure, and the other is provided on the readout unit, etc.

[0075] In some embodiments, the cross-sectional radial dimension or width dimension of the first welding bump 12 is less than or equal to 10 μm, such as 10 μm, 9 μm, 8 μm, 5 μm, etc. The cross-sectional dimension and shape of the second welding bump 22 are the same as those of the first welding bump 12 .

[0076] In some embodiments, the distance between adjacent first welding bumps 12 is less than or equal to 20 μm, such as 20 μm, 18 μm, 15 μm, 13 μm, 10 μm, etc.

[0077] In some embodiments, the first solder bump 12 and the second solder bump 22 have a first thickness T1 and a second thickness T2 in the thickness direction T of the photosensor assembly, respectively.

[0078] In some embodiments, in the photoelectric sensor assembly, the strip protrusions located on the same side of the first welding bump setting area Q1 and the second welding bump setting area Q3 included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, that is, when the first peripheral area Q2 and the second peripheral area Q4 are both provided with two strip protrusions, the strip protrusions arranged in the first peripheral area Q2 have a first protrusion thickness t1 in the thickness direction T of the photoelectric sensor assembly, and the strip protrusions arranged in the second peripheral area Q4 have a second protrusion thickness t2 in the thickness direction T of the photoelectric sensor assembly. For example, in combination with Figure 3 As shown, in the photosensor assembly 1000 , the strip-shaped protrusions 13 have a first protrusion thickness t1 , and the strip-shaped protrusions 23 have a second protrusion thickness t2 .

[0079] The first protrusion thickness t1, the second protrusion thickness t2, the first welding bump 12 thickness T1 and the second welding bump 22 thickness T2 satisfy the following relationship: t1+t2<T1+T2.

[0080] The sum of the thicknesses of the two opposing strip-shaped protrusions 13 and 23 is smaller than the sum of the thickness T1 of the first welding bump 12 and the thickness T2 of the second welding bump 22, so that a gap 102 is formed between the strip-shaped protrusions 13 and 23, which is beneficial for the gas to be discharged from the gap 102 on both sides when the base glue is spread, and is beneficial for further avoiding the occurrence of bubbles in the base glue due to too fast spreading speed in the edge area when the base glue is filled.

[0081] In some other embodiments, in the photoelectric sensor assembly, when only the first peripheral area Q2 or the second peripheral area Q4 is provided with two strip-shaped protrusions, the strip-shaped protrusions have a third protrusion thickness t3 in the thickness direction T of the photoelectric sensor assembly. Fig.10 As shown, the strip-shaped protrusion 13 has a third protrusion thickness t13. The third protrusion thickness t3, the thickness T1 of the first welding protrusion 12 and the thickness T2 of the second welding protrusion 22 satisfy the following relationship: t3<T1+T2.

[0082] Here, the thickness t3 of the third protrusion is smaller than the sum of the thickness T1 of the first welding bump 12 and the thickness T2 of the second welding bump 22, so that a gap 103 is formed between the top of the strip protrusion 13 and the optoelectronic structure 20, which is beneficial for the gas to be discharged from the gap 103 on both sides when the base glue is spread, and is beneficial for further avoiding the occurrence of bubbles in the base glue due to too fast spreading speed in the edge area when the base glue is filled.

[0083] In some embodiments, when the strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively provided in the first peripheral area and the second peripheral area and facing each other, that is, when the first peripheral area Q1 and the second peripheral area Q3 are each provided with two strip protrusions, the distance between the strip protrusion 13 of the first peripheral area Q1 and the strip protrusion 23 of the second peripheral area Q3 facing each other is less than 2μm. For example, Figure 3 The dimension D1 of the gap 102 shown in the thickness direction T is less than 2 μm to prevent the occurrence of a short circuit problem caused by contact between some adjacent solder joints due to the large relative inclination angle between the two when the optoelectronic structure 20 is flipped and bonded to the corresponding read-out unit 10 in the read-out circuit structure 1.

[0084] In other embodiments, when there is one strip-shaped protrusion located on the same side of the first solder bump setting area and the second solder bump setting area included in the photoelectric sensor unit in the first direction, in the photoelectric sensor assembly, the distance between the top of one protrusion structure and the relative peripheral area is less than 2μm. The relative peripheral area mentioned here can be another peripheral area without a protrusion structure that is directly opposite to the peripheral area with the protrusion structure. For example Fig.10 The first peripheral area of ​​the readout unit 10" is provided with a protruding structure 13, and the second peripheral area of ​​the optoelectronic structure 20" is not provided with a protruding structure 13. The distance between the top of the protruding structure 13 and the second peripheral area of ​​the optoelectronic structure 20" is less than 2 μm, that is, Fig.10 The dimension D2 of the gap 103 shown in the thickness direction T is less than 2 μm to prevent the occurrence of a short circuit problem caused by contact between some adjacent solder joints due to the large relative inclination angle between the two when the optoelectronic structure 20 is flipped and bonded to the corresponding read-out unit 10 in the read-out circuit structure 1.

[0085] In some embodiments, the strip protrusions on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, that is, the first peripheral area Q2 and the second peripheral area Q4 are each provided with two strip protrusions, and the width of the two strip protrusions is greater than twice the alignment accuracy when the readout circuit structure 1 and the photoelectric structure 20 are bonded, so as to ensure that under the alignment accuracy of the actual bonding process, the two strip protrusions facing each other can be aligned to prevent the two from being misaligned.

[0086] In some embodiments, the distance between each adjacent two welding bumps in the plurality of first welding bumps 12 is a first distance d1, and the distance between the strip-shaped protrusion and the first welding bump 12 closest to the strip-shaped protrusion is a second distance d2. The second distance d2 is smaller than the first distance d1, so as to be more conducive to the spreading of the primer.

[0087] In some embodiments, the strip-shaped protrusion is made of one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials. The strip-shaped protrusion can be integrally formed with the corresponding readout circuit structure body or optoelectronic structure body. For example, a thicker structure including a corresponding part of the second body and a corresponding part of the strip-shaped protrusion can be formed first, and then the second body and the corresponding strip-shaped protrusion are formed by etching.

[0088] Of course, in some other embodiments, the second body may be formed first, and the strip-shaped protrusions are subsequently provided separately on the optoelectronic structure body.

[0089] In some embodiments, the first peripheral area Q2 located on one side of the first welding bump setting area Q1 and the second welding bump setting area Q3 is provided with a glue application area 1001, wherein both sides of the strip-shaped protrusion are adjacent to one side of the glue application area 1001.

[0090] In some embodiments, each of the first peripheral regions Q2 is provided with a plurality of lead-out pads. When at least some of the lead-out pads and at least one side of the strip-shaped protrusion are located on the same side of the first solder bump setting region, among the lead-out pads and the strip-shaped protrusion located on the same side of the first solder bump setting region, the lead-out pads are located on the side of the strip-shaped protrusion away from the first solder bump setting region Q1.

[0091] For example, combining Figure 5 As shown, the first peripheral region Q2 is provided with a plurality of lead pads 14. The lead pads 14 and the strip protrusions 13 are located on the same side of the first solder bump arrangement region Q1, and the lead pads 14 are located on the side of the strip protrusions 13 away from the first solder bump arrangement region Q1.

[0092] Of course, in other embodiments, the lead pads may be arranged on a different side from the strip-shaped protrusions. For example, at least a portion of the lead pads may be located on the same side as the glue application area 1001. When at least a portion of the lead pads 14 are located on the same side as the glue application area 1001, the lead pads 14 located at the same end as the glue application area 1001 are located on the side of the glue application area 1001 away from the first solder bump setting area Q1, for example Figure 8 shown.

[0093] In some embodiments, the optoelectronic structure is a photodetection structure.

[0094] The optoelectronic structure 20 is a readout circuit unit structure having one readout unit or a readout circuit wafer having a plurality of readout units.

[0095] In some embodiments, the orthographic projection of the optoelectronic structure 20 on the first surface falls within the orthographic projection of the corresponding readout unit on the first surface.

[0096] The extension direction of the glue application area 1001 may be the same as the extension direction of the side edge of the first solder bump arrangement area Q1 where the glue application area 1001 is arranged. Figure 2 As shown, the glue application area 1001 can extend along the second direction W.

[0097] In some embodiments, the extension direction of the glue application area 1001 may be perpendicular to the extension direction of the strip-shaped protrusions 13. Figures 2 to 4As shown, each of the first solder bump setting areas Q1 has two opposite side ends 1002 and 1003 in the first direction L of the photoelectric sensor assembly, wherein one side end 1002 is provided with a glue application area 1001 .

[0098] For example Figure 7 and Figure 8 As shown, each of the first solder bump setting areas Q1 has two opposite side ends 1004 and 1005 in the second direction W of the photoelectric sensor assembly, wherein one side end 104 is provided with a glue application area 1001 .

[0099] In some embodiments, the glue application area 1001 is directly opposite to the first welding bump setting area Q1, which is beneficial to improving the uniformity of the base glue spreading.

[0100] In some embodiments, the length l1 of the readout unit 10 corresponding to the glue application area 1001 in the extending direction of the glue application area 1001 and the length l2 of the glue application area have the following relationship: 1 / 2l1≤l2≤2 / 3l1.

[0101] Optionally, the length l1 of the readout unit 10 corresponding to the glue application area 1001 in the extending direction of the glue application area 1001 may be equal to the spanning length of the first welding bump 12 and the second welding bump of the array in the same direction.

[0102] In some embodiments, the first solder bump 12 includes a solder metal layer 121 close to the readout circuit structure body 11 and a solder layer 122 located at the solder metal layer 121 away from the readout circuit structure body 11. The solder metal layer may include a bottom layer close to the readout circuit structure body 11, an intermediate layer located at the bottom layer away from the readout circuit structure body 11, and a top metal layer located at the intermediate layer away from the readout circuit structure body 11. Among them, the bottom layer is a bonding layer, mainly including materials such as Cr and Ti, which can achieve bonding between the intermediate layer and the circuit structure in the readout circuit structure body 11. The intermediate layer is a barrier layer to prevent the top metal from diffusing into the readout circuit structure body 11. The top metal layer mainly includes materials such as Ni and Pt. The solder layer body includes materials such as Au and Ag.

[0103] The second solder bump 22 includes a solder metal layer 221 close to the optoelectronic structure body 21 and a solder layer 222 located at the solder metal layer 221 away from the optoelectronic structure body 21. The second solder bump 22 may have a similar specific structure to the first solder bump 12.

[0104] like Fig.11 As shown, the present application further provides a method for preparing a photoelectric sensor assembly, which includes the following steps S101 and S103:

[0105] In step S101, a readout circuit structure is provided, wherein the readout circuit structure has a first surface and at least one readout unit, and the first surface of each readout unit has a first solder bump setting area and a first peripheral area located outside the first solder bump setting area;

[0106] In step S103, at least one optoelectronic structure is provided, and each optoelectronic structure is bonded to a readout unit to form an optoelectronic sensor assembly including at least one optoelectronic sensor unit, each optoelectronic sensor unit includes an optoelectronic structure and a corresponding readout unit, the optoelectronic structure has a third surface, the third surface has a second solder bump arrangement area located in the middle and opposite to the first solder bump arrangement area, and a second peripheral area located at the periphery of the second solder bump arrangement area and opposite to the first peripheral area;

[0107] Wherein, in each photoelectric sensor unit, a strip-shaped protrusion is provided in the peripheral area located on two opposite sides of the first welding bump arrangement area and the second welding bump arrangement area.

[0108] Combine the following Figures 12 to 20 As shown, the preparation method of the photoelectric sensor component is described.

[0109] like Fig.12 In step S101, a readout circuit structure 1 is provided, having a first surface S1 and a second surface S2 that are opposite to each other, and having at least one readout unit 10. The first surface S1 of each readout unit 10 has a first welding bump setting area Q1 and a first peripheral area Q2 located outside the first welding bump setting area Q1.

[0110] like Figures 13 to 15 As shown, in step S103, at least one optoelectronic structure 20 is provided, and each optoelectronic structure 20 is bonded to a readout unit 10 to form a photoelectric sensor assembly, the optoelectronic structure 20 having a third surface S3 and a fourth surface S4 that are opposite to each other, the third surface S3 having a second welding bump setting area Q3 located in the middle and opposite to the first welding bump setting area Q1, and a second peripheral area Q4 located at the periphery of the second welding bump setting area Q3 and opposite to the first peripheral area Q2.

[0111] Among them, in each photoelectric sensor unit, the first peripheral area Q2 has a glue application area 1001 located at one end of the first welding bump setting area Q1 in the first direction L, and between the photoelectric structure 20 and the corresponding read-out unit 10, there are strip protrusions (such as strip protrusions 13 and 23) located on opposite sides of the first welding bump setting area Q1 and the second welding bump setting area Q3 in the first direction.

[0112] In some embodiments, in step S103, before each optoelectronic structure 20 is bonded to a readout unit 10, an intermediate sensor assembly, such as the intermediate sensor assembly 100, may be formed first. Accordingly, after each optoelectronic structure 20 is bonded to a readout unit 10, the method includes the following step S105:

[0113] In step S105 , a primer 30 is filled in the spacing space between the readout circuit structure 1 and the optoelectronic structure 20 .

[0114] Combination Figures 16 to 19 As shown, step S105 of filling the primer in the gap between the readout circuit structure 1 and the optoelectronic structure 20 may specifically include the following steps S1051 to S1053:

[0115] In step S1051, at room temperature, a primer 30' is applied to the glue application area of ​​the photoelectric sensor assembly.

[0116] In step S1052 , the photoelectric sensor assembly with the primer 30 ′ applied thereto is placed in a vacuum environment and preliminarily heated to a first temperature so that the primer fills the spacing space between the readout circuit structure 1 and the photoelectric structure 20 .

[0117] In some embodiments, the first temperature is 50 degrees Celsius to 70 degrees Celsius, and the initial addition time may be about 30 minutes. The vacuum environment of step S1052 may be a chamber of a vacuum oven.

[0118] The first temperature is lower than the curing temperature of the primer and lower than the viscosity inflection point temperature of the primer.

[0119] In step S1053 , the heating is continued to the second temperature so that the primer is cured to form the primer 30 .

[0120] The second temperature is 100 degrees Celsius to 130 degrees Celsius, and the duration of the second temperature (ie, the curing duration) is approximately 30 minutes. The step S1053 can continue to be performed in the vacuum environment provided by the vacuum oven.

[0121] The second temperature may be a curing temperature of the primer, or may be greater than a curing temperature of the primer.

[0122] This implementation method is beneficial to improving the efficiency of primer filling.

[0123] Of course, in some other embodiments, the primer spreading and primer curing can also be performed at room temperature.

[0124] Please combine Fig. 20As shown, in some embodiments, in step S1052, the photoelectric sensor assembly with the primer applied is placed in a vacuum environment and preliminarily heated to a first temperature so that the primer fills the spacing space between the readout circuit structure 1 and the photoelectric structure 20, and the method further includes:

[0125] The end of the middle photoelectric sensor assembly 100 that is away from the glue application area is tilted downward at a preset angle to help increase the speed of base glue laying and improve the base glue filling efficiency.

[0126] here Figures 12 to 20 Take the case where both the readout circuit structure and the photoelectric structure are provided with strip-shaped protrusions as an example for explanation. When the strip-shaped protrusions are provided in other ways, the preparation of the photoelectric sensor assembly can refer to the above-mentioned related steps and be prepared by a similar preparation method.

[0127] It should be noted that when the readout circuit structure 1 of the above-mentioned photoelectric sensor assembly has one readout unit 10, the photoelectric sensor assembly is a photoelectric sensor having one photoelectric sensor unit. When the above-mentioned photoelectric sensor assembly has multiple readout units 10, the photoelectric sensor assembly is a photoelectric sensor wafer having multiple photoelectric sensor units. The photoelectric sensor wafer can be cut into a photoelectric sensor having one photoelectric sensor unit.

[0128] In the present application, the structural embodiments and method embodiments may complement each other if they do not conflict.

[0129] In the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The terms "plurality" and "several" refer to two or more than two, unless otherwise clearly defined.

[0130] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the disclosure disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0131] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A photoelectric sensor assembly, characterized in that: include: A readout circuit structure has a first surface and at least one readout unit, wherein the first surface of each readout unit has a first solder bump setting area and a first peripheral area located outside the first solder bump setting area; At least one optoelectronic structure, each optoelectronic structure is bonded to a readout unit and forms an optoelectronic sensor unit with the corresponding readout unit, the optoelectronic structure having a third surface, the third surface having a second solder bump setting area located in the middle and opposite to the first solder bump setting area, and a second peripheral area located at the periphery of the second solder bump setting area and opposite to the first peripheral area; Wherein, in each photoelectric sensor unit, a strip-shaped protrusion is provided in the peripheral area located on two opposite sides of the first welding bump arrangement area and the second welding bump arrangement area.

2. The photoelectric sensor assembly according to claim 1, characterized in that: The first welding bump arrangement area is provided with a plurality of first welding bumps arranged in an array, the second welding bump arrangement area is provided with a plurality of second welding bumps corresponding to the plurality of first welding bumps one by one, and the first welding bumps and the second welding bumps have a first thickness T1 and a second thickness T2 respectively in the thickness direction of the photoelectric sensor component; The strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, the strip protrusion arranged in the first peripheral area has a first protrusion thickness t1 in the thickness direction of the photoelectric sensor component, and the strip protrusion arranged in the second peripheral area has a second protrusion thickness t2 in the thickness direction of the photoelectric sensor component; wherein the first protrusion thickness t1, the second protrusion thickness t2, the first thickness T1 and the second thickness T2 satisfy the relationship: t1+t2≤T1+T2; or, There is one strip-shaped protrusion located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit, one of the strip-shaped protrusions is arranged on one of the first peripheral area and the second peripheral area, and one of the strip-shaped protrusions has a third protrusion thickness t3 in the thickness direction of the photoelectric sensor component; wherein the third protrusion thickness t3, the first thickness T1 and the second thickness T2 satisfy the relationship: t3<T1+T2.

3. The photoelectric sensor assembly according to claim 2, characterized in that: When the strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, the spacing distance between the strip protrusion arranged in the first peripheral area and the strip protrusion arranged in the second peripheral area is less than 2 μm; When there is one strip-shaped protrusion located on the same side of the first solder bump arrangement region and the second solder bump arrangement region included in the photoelectric sensor unit, the spacing distance between the strip-shaped protrusion and the corresponding peripheral region is less than 2 μm.

4. The photoelectric sensor assembly according to claim 2, characterized in that: When the strip protrusions located on the same side of the first welding bump setting area and the second welding bump setting area included in the photoelectric sensor unit are two strip protrusions respectively arranged in the first peripheral area and the second peripheral area and facing each other, the width of the two strip protrusions is greater than twice the alignment accuracy when the readout circuit structure and the photoelectric structure are bonded.

5. The photoelectric sensor assembly according to claim 1, characterized in that: The first welding bump arrangement area is provided with a plurality of first welding bumps arranged in an array, and the second welding bump arrangement area is provided with a plurality of second welding bumps corresponding to the plurality of the first welding bumps one by one; The distance between each two adjacent welding bumps among the plurality of the first welding bumps is a first distance, and the distance between the strip-shaped bump and the first welding bump closest to the strip-shaped bump is a second distance; wherein the second distance is smaller than the first distance.

6. The photoelectric sensor assembly according to claim 1, characterized in that: The material of the strip-shaped protrusions is one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials.

7. The photoelectric sensor assembly according to claim 1, characterized in that: The first peripheral area located on one side of the first welding bump setting area and the second welding bump setting area is provided with a glue application area, wherein both sides where the strip-shaped protrusions are provided are adjacent to one side where the glue application area is provided.

8. The photoelectric sensor assembly according to claim 7, characterized in that: Each of the first peripheral regions is provided with a plurality of lead-out pads, and when at least some of the lead-out pads and at least one side of the strip-shaped protrusion are located on the same side of the first solder bump setting region, among the lead-out pads and the strip-shaped protrusion located on the same side of the first solder bump setting region, the lead-out pad is located on a side of the strip-shaped protrusion away from the first solder bump setting region; or, Each of the first peripheral areas is provided with a plurality of lead pads. When at least some of the lead pads are located on the same side as the glue application area, the lead pads located at the same end as the glue application area are located on the side of the glue application area away from the first solder bump setting area.

9. The photoelectric sensor assembly according to claim 7 or 8, characterized in that: The extending direction of the glue application area is perpendicular to the extending direction of the strip-shaped protrusions.

10. The photoelectric sensor assembly according to claim 9, characterized in that: The glue application area is directly opposite to the first welding bump setting area; The length l1 of the readout unit corresponding to the glue application area in the extending direction of the glue application area and the length l2 of the glue application area have the following relationship: 1 / 2l1≤l2≤2 / 3l1.

11. The photoelectric sensor assembly according to claim 1, characterized in that: The first welding bump setting area is provided with a plurality of first welding bumps arranged in an array, the second welding bump setting area is provided with a plurality of second welding bumps corresponding one-to-one to the plurality of first welding bumps, there is a spacing space between the readout circuit structure and the photoelectric structure readout unit located outside the first welding bump and the second welding bump, and the photoelectric sensor assembly includes a base glue located in the spacing space.

12. A method for preparing a photoelectric sensor assembly, characterized in that: include: A readout circuit structure is provided, wherein the readout circuit structure has a first surface and at least one readout unit, wherein the first surface of each readout unit has a first solder bump setting area and a first peripheral area located outside the first solder bump setting area; Providing at least one optoelectronic structure, and bonding each optoelectronic structure to a corresponding readout unit to form an optoelectronic sensor assembly including at least one optoelectronic sensor unit, each optoelectronic sensor unit including an optoelectronic structure and a corresponding readout unit, the optoelectronic structure having a third surface, the third surface having a second solder bump arrangement area located in the middle and opposite to the first solder bump arrangement area, and a second peripheral area located at the periphery of the second solder bump arrangement area and opposite to the first peripheral area; Wherein, in each photoelectric sensor unit, a strip-shaped protrusion is provided in the peripheral area located on two opposite sides of the first welding bump arrangement area and the second welding bump arrangement area.

13. The method for preparing a photoelectric sensor assembly according to claim 12, characterized in that: After each optoelectronic structure is bonded to a readout unit, the method includes: A primer is filled in the spacing space between the readout circuit structure and the optoelectronic structure.

14. The method for preparing a photoelectric sensor assembly according to claim 13, characterized in that: The first peripheral area located on one side of the first welding bump setting area is provided with a glue application area, wherein both sides of the strip-shaped protrusion are adjacent to the side of the glue application area; and the filling of the primer in the interval between the readout circuit structure and the optoelectronic structure includes: Applying primer to the glue application area of ​​the photoelectric sensor assembly at room temperature; Placing the photoelectric sensor assembly with the primer applied thereto in a vacuum environment, and preliminarily heating it to a first temperature so that the primer fills the spacing space between the readout circuit structure and the photoelectric structure; Continue heating to a second temperature to solidify the primer.

15. The method for preparing a photoelectric sensor assembly according to claim 14, characterized in that: When the photoelectric sensor assembly with the primer applied thereto is placed in a vacuum environment and preliminarily heated to a first temperature so that the primer fills the spacing space between the readout circuit structure and the photoelectric structure, the method further comprises: The end of the photoelectric sensor assembly facing away from the glue application area is tilted downward at a preset angle.

16. A readout circuit structure, characterized in that: The readout circuit structure has a first surface and includes at least one readout unit; The readout unit has a first welding bump setting area located in the middle and a first peripheral area located outside the first welding bump setting area, and strip protrusions are provided on one side or two opposite sides of the first welding bump setting area in the first peripheral area.

17. The readout circuit structure according to claim 16, characterized in that: The first welding bump setting area is provided with a plurality of first welding bumps arranged in an array; the distance between the strip-shaped bump and the first welding bump closest to the strip-shaped bump is smaller than the distance between each adjacent two first welding bumps among the plurality of the first welding bumps; The material of the strip-shaped protrusions is one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials.

18. A photovoltaic structure, characterized in that: The optoelectronic structure has a third surface, which has a second welding bump setting area located in the middle and a second peripheral area located outside the second welding bump setting area. Strip protrusions are provided on one side or on two opposite sides of the second welding bump setting area in the second peripheral area.

19. The optoelectronic structure according to claim 18, characterized in that: The second welding bump setting area is provided with a plurality of second welding bumps arranged in an array; the distance between the strip-shaped protrusion and the second welding bump closest to the strip-shaped protrusion is smaller than the distance between each adjacent two second welding bumps among the plurality of second welding bumps; The material of the strip-shaped protrusions is one or more of silicon-based materials, compound materials, metals, ceramics, and organic materials.

Images