Light-emitting element, display panel and preparation method of display panel

Abstract

The invention discloses a light-emitting element, a display panel and a preparation method of the display panel, the light-emitting element grows on one side of a substrate, and the light-emitting element comprises a light-emitting main body which is located on one side of the substrate and comprises a first semiconductor layer, a quantum well layer and a second semiconductor layer which are sequentially stacked in the direction away from the substrate, a first groove is formed in the surface, deviating from the substrate, of the light-emitting main body, penetrates through the second semiconductor layer and the quantum well layer and is communicated with the first semiconductor layer; the first conductive material is filled in the first groove; the first electrode and the second electrode are arranged on the side, away from the substrate, of the light-emitting body, the first electrode is electrically connected with the first conductive material, and the second electrode is electrically connected with the second semiconductor layer. Through the design, the problems of adhesive residue and pseudo soldering in the transferring and welding process due to the existence of height difference in the prior art can be solved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting element, a display panel, and a method for preparing the display panel. Background Art

[0002] In the prior art, during the preparation of flip-chip Micro LED (Micro Light Emitting Diode) components, since the P-type semiconductor layer and the N-type semiconductor layer are not on the same level, a height difference will appear after electrodes are prepared on the P-type semiconductor layer and the N-type semiconductor layer, resulting in problems such as residual glue and cold solder joints during the transfer and welding process.

[0003] Secondly, during the transfer and welding process of Micro LED components, some Micro LED components in the non-pad area were dislocated and adhered to the driver backplane. Summary of the invention

[0004] The present application provides a light-emitting element, a display panel and a method for manufacturing the display panel, which can improve the problems of residual glue and cold solder joints.

[0005] A first aspect of an embodiment of the present application provides a light-emitting element, which is grown on one side of a substrate, and includes: a light-emitting body, which is located on one side of the substrate, and includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer stacked in sequence in a direction away from the substrate, a first groove is provided on the surface of the light-emitting body away from the substrate, and the first groove passes through the second semiconductor layer and the quantum well layer and is connected to the first semiconductor layer; a first conductive material is filled in the first groove; a first electrode and a second electrode are arranged on the side of the light-emitting body away from the substrate, the first electrode is electrically connected to the first conductive material, and the second electrode is electrically connected to the second semiconductor layer.

[0006] Furthermore, the light emitting element also includes: an insulating layer, at least partially formed on the side of the second semiconductor layer away from the substrate, having a second groove connected to the second semiconductor layer, the second groove is filled with a second conductive material, and the second electrode is electrically connected to the second conductive material.

[0007] Furthermore, the insulating layer further extends to the groove wall of the first groove.

[0008] The first electrode and the second electrode are made of the same material; and / or the first conductive material and the second conductive material are the same material.

[0009] The orthographic projection of the first electrode on the substrate covers the orthographic projection of the first conductive material on the substrate; and / or the orthographic projection of the second electrode on the substrate covers the orthographic projection of the second conductive material on the substrate.

[0010] A second aspect of the embodiments of the present application provides a display panel, comprising a light-emitting element as described in any one of the above embodiments and a driving backplane electrically connected to the light-emitting element.

[0011] Wherein, the driving backplane includes: a backplane main body, a first surface of which is convexly provided with a welding pad; and a viscosity-reducing layer, which is arranged on the first surface of the backplane main body and around the welding pad.

[0012] Wherein, in the thickness direction of the backplane body, the welding pad protrudes out of the adhesion-reducing layer.

[0013] Preferably, in the thickness direction of the backplane body, the height of the pad protruding from the anti-adhesion layer ranges from 1um to 5um; and / or the material of the anti-adhesion layer includes at least one of silicon oxide, silicon nitride and silicon oxynitride.

[0014] A third aspect of an embodiment of the present application provides a method for preparing a display panel, the method comprising: forming a light-emitting body on one side of a substrate, wherein the light-emitting body comprises a first semiconductor layer, a quantum well layer, and a second semiconductor layer stacked in sequence in a direction away from the substrate, and a first groove is provided on a surface of the light-emitting body away from the substrate, the first groove penetrates the second semiconductor layer and the quantum well layer and is connected to the first semiconductor layer; filling a first conductive material in the first groove; forming a first electrode and a second electrode on a side of the light-emitting body away from the substrate to obtain a light-emitting element, wherein the first electrode is electrically connected to the first conductive material, and the second electrode is electrically connected to the second semiconductor layer.

[0015] Before the step of filling the first groove with the first conductive material, the method further includes: forming an insulating layer on at least one side of the second semiconductor layer away from the substrate; forming a second groove penetrating the insulating layer; and after the step of filling the first groove with the first conductive material, the method further includes: filling the second groove with a second conductive material.

[0016] Preferably, after obtaining the light-emitting element, the method further includes: providing a backplane body, a first surface of which is convexly provided with a solder pad; forming a de-adhesion layer surrounding the solder pad on the first surface to obtain a driving backplane; transferring the light-emitting element to the driving backplane, and electrically connecting the first electrode, the second electrode and the solder pad.

[0017] The beneficial effect is that the present application fills the first conductive material in the first groove of the light-emitting element, thereby eliminating the height difference caused by partial depression when preparing the first electrode, and improving the problems of residual glue and cold solder joints in the transfer and welding process in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0019] Figure 1 It is a schematic structural diagram of an embodiment of a light-emitting element of the present application;

[0020] Figure 2 It is a structural schematic diagram of a light-emitting element in the prior art;

[0021] Figure 3 yes Figure 1 Schematic diagram of the structure in which the light-emitting element is transferred and welded to the driver backplane;

[0022] Figure 4 It is a schematic diagram of the structure of transferring and welding the light emitting element to the driving back plate in the prior art;

[0023] Figure 5 It is a schematic diagram of a process of an embodiment of a method for preparing a display panel of the present application;

[0024] Figure 6 yes Figure 5 Corresponding preparation process diagram;

[0025] Figure 7 yes Figure 6 Figure 2 shows the subsequent preparation process. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0027] It should be noted that the terms "first" and "second" in this application are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0028] See also Figure 1 The light emitting element 10 is grown on one side of the substrate 100, and the light emitting element 10 includes a light emitting body 200, a first electrode 310 and a second electrode 320. The material of the substrate 100 includes any one of sapphire, gallium phosphide, silicon carbide, aluminum oxide and zinc oxide, and mainly plays a supporting role.

[0029] The light-emitting body 200 is located on one side of the substrate 100, and includes a first semiconductor layer 210, a quantum well layer 220, and a second semiconductor layer 230 stacked in sequence in a direction away from the substrate 100. A first groove 410A is provided on the surface of the light-emitting body 200 away from the substrate 100. The first groove 410A passes through the second semiconductor layer 230 and the quantum well layer 220 and is connected to the first semiconductor layer 210.

[0030] Specifically, the light-emitting body 200 includes a first semiconductor layer 210, a quantum well layer 220, and a second semiconductor layer 230. The function of the quantum well layer 220 is to emit light by compounding holes and electrons, and the first semiconductor layer 210 and the second semiconductor layer 230 provide holes and electrons. Exemplarily, the first semiconductor layer 210 provides holes for a P-type semiconductor layer, and the second semiconductor layer 230 provides electrons for an N-type semiconductor layer; or, the first semiconductor layer 210 provides electrons for an N-type semiconductor layer, and the second semiconductor layer 230 provides holes for a P-type semiconductor layer. The materials of the first semiconductor layer 210, the quantum well layer 220, and the second semiconductor layer 230 include semiconductor materials such as nitrides, arsenides, and phosphides, and specifically, for example, are prepared from at least one of gallium nitride (GaN), gallium selenide (GaAs), aluminum gallium arsenide (AlGaAs), and gallium phosphide (GaP). The first groove 410A penetrates the second semiconductor layer 230 and the quantum well layer 220 in the light emitting body 200, so that the first semiconductor layer 210 is exposed on the side away from the substrate 100 (ie, not covered by the second semiconductor layer 230 and the quantum well layer 220), which facilitates electrical connection with external electrodes.

[0031] The first conductive material 410 is filled in the first groove 410A. The first conductive material 410 fills the first groove 410A, and the first conductive material 410 is electrically connected to the first semiconductor layer 210 , and the height difference caused by setting the first groove 410A in the second semiconductor layer 230 and the quantum well layer 220 can be eliminated.

[0032] The first electrode 310 and the second electrode 320 are disposed on a side of the light emitting body 200 away from the substrate 100 . The first electrode 310 is electrically connected to the first conductive material 410 , and the second electrode 320 is electrically connected to the second semiconductor layer 230 .

[0033] Specifically, the first electrode 310 is electrically connected to the first conductive material 410, and further to the first semiconductor layer 210, and the second electrode 320 is electrically connected to the second semiconductor layer 230. By applying an external power signal to the first electrode 310 and the second electrode 320, a loop is formed, and the holes and electrons in the quantum well layer 220 are combined to emit light. Figure 2 In the prior art, the first semiconductor layer 210 is directly electrically connected to the first electrode 310. Based on the structure and the material characteristics, the first electrode 310 is filled into the first groove 410A. After a period of time, the portion of the first electrode 310 that is higher than the first groove 410A will inevitably produce the following Figure 2 As shown in the depression, a large height difference will be generated on the side of the first electrode 310 away from the substrate 100. In the subsequent pad transfer and welding process with the driving backplane, the depressed part is prone to residual glue and the problem of cold solder joints is prone to occur, which greatly reduces the reliability. In the present application, the first conductive material 410 is filled in the first groove 410A, eliminating the height difference caused by the depression on the side of the first electrode 310 away from the substrate 100. Therefore, in the subsequent pad transfer and welding process with the driving backplane, the problem of residual glue and cold solder joints will not be generated, and the reliability is improved. At the same time, the first electrode 310 and the second electrode 320 are integrally convexly arranged on the side of the light-emitting body 200 away from the substrate 100. In the subsequent pad transfer and welding process between the first electrode 310, the second electrode 320 and the driving backplane, it will not interfere with the light-emitting body 200, and the stability of the preparation is improved.

[0034] Please continue reading Figure 1 The light emitting element 10 further includes an insulating layer 500. The insulating layer 500 is at least partially formed on the side of the second semiconductor layer 230 away from the substrate 100, and the insulating layer 500 is provided with a second groove 420A connected to the second semiconductor layer 230, the second groove 420A is filled with a second conductive material 420, and the second electrode 320 is electrically connected to the second conductive material 420.

[0035] Specifically, the insulating layer 500 at least partially covers the surface of the second semiconductor layer 230 on the side facing away from the substrate 100, and is used to protect the light-emitting body 200. A second groove 420A is provided in the insulating layer 500, and the second conductive material 420 is filled in the second groove 420A. The second electrode 320 is electrically connected to the second semiconductor layer 230 through the second conductive material 420. It should be noted that in this embodiment, in order to electrically connect the first electrode 310 to the first semiconductor layer 210, the first groove 410A further penetrates the insulating layer 500, so that the first conductive material 410 is electrically connected to the first electrode 310 and the first semiconductor layer 210, so that the height difference problem existing in the preparation of the first electrode 310 and the second electrode 320 can be eliminated.

[0036] In some other embodiments, the insulating layer 500 may not be disposed on the surface of the second semiconductor layer 230 facing away from the substrate 100 .

[0037] In some other embodiments, the second groove 420A may not be provided and the second conductive material 420 may not be filled, so as to reduce the complexity of the process.

[0038] Further, see Figure 1 , the insulating layer 500 further extends to the groove wall of the first groove 410A.

[0039] Specifically, the insulating layer 500 is disposed between the first conductive material 410 and the second semiconductor layer 230 and the quantum well layer 220, so that the light emitting element 10 can be protected and short circuits can be prevented between the first conductive material 410 and the second semiconductor layer 230 and the quantum well layer 220. The material of the insulating layer 500 can be an inorganic material, an organic material, or an organic-inorganic hybrid material. The inorganic material includes silicon nitride, silicon oxide, or silicon oxynitride, and the organic material includes polyimide, polyvinyl chloride, polyethylene, or polymethyl methacrylate.

[0040] Of course, in some other embodiments, a gap may be provided between the first conductive material 410 and the second semiconductor layer 230 and the quantum well layer 220 in the light emitting body 200 to achieve the purpose of insulation.

[0041] Further, the first electrode 310 and the second electrode 320 are made of the same material. The materials of the first electrode 310 and the second electrode 320 include a combination of one or more of chromium (Cr), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), nickel (Ni) or molybdenum (Mo). The first electrode 310 and the second electrode 320 are made of the same material so that the two can be prepared at the same time, saving the preparation cost, and the first electrode 310 and the second electrode 320 can ensure the same conductive properties.

[0042] In some other embodiments, the first electrode 310 and the second electrode 320 may also be made of different materials.

[0043] Further, the first conductive material 410 is the same as the second conductive material 420. The first conductive material 410 and the second conductive material include a combination of one or more of chromium (Cr), platinum (Pt), gold (Au), or indium tin oxide, etc. The first conductive material 410 and the second conductive material 420 are made of the same material, which can simplify the preparation process.

[0044] In some other embodiments, the first conductive material 410 and the second conductive material may also be made of different materials.

[0045] Continue reading Figure 1 In the embodiment of the present application, the orthographic projection of the first electrode 310 on the substrate 100 covers the orthographic projection of the first conductive material 410 on the substrate 100. In the above design, the surface of the first conductive material 410 facing away from the substrate 100 is completely covered by the first electrode 310, which ensures the conductive contact area between the first conductive material 410 and the first electrode 310, and improves the conductive performance between the first conductive material 410 and the first electrode 310.

[0046] Similarly, the orthographic projection of the second electrode 320 on the substrate 100 covers the orthographic projection of the second conductive material 420 on the substrate 100. In the above design, the surface of the second conductive material 420 facing away from the substrate 100 is completely covered by the second electrode 320, which ensures the conductive contact area between the second conductive material 420 and the second electrode 320 and improves the conductive performance between the second conductive material 420 and the second electrode 320.

[0047] Of course, in some other embodiments, the orthographic projection of the first electrode 310 on the substrate 100 does not completely cover the orthographic projection of the first conductive material 410 on the substrate 100. And / or, the orthographic projection of the second electrode 320 on the substrate 100 does not completely cover the orthographic projection of the second conductive material 420 on the substrate 100.

[0048] Please refer to Figure 3 The present application also provides a driving backplane 20, which includes a backplane body 600 and a de-adhesion layer 700. A soldering pad 800 is convexly provided on the first surface A of the backplane body 600. The backplane body 600 includes a substrate and a driving layer, the driving layer is electrically connected to the soldering pad 800, and the driving layer includes a driving circuit for driving the light-emitting element 10 to emit light. The soldering pad 800 is convexly provided on the first surface A, which can ensure that the first electrode 310 and the second electrode 320 of the light-emitting element 10 will not affect the backplane body 600 when being transferred and welded with the soldering pad 800.

[0049] Further, the anti-adhesion layer 700 is disposed on the first surface A of the backplane body 600 and is disposed around the soldering pad 800. Exemplarily, the number of light-emitting elements 10 is multiple, wherein the multiple light-emitting elements 10 are respectively defined as light-emitting elements 10A and 10B, 10A and 10B can be sub-light-emitting elements including multiple colors, such as red sub-light-emitting elements, green sub-light-emitting elements and blue sub-light-emitting elements. When the multiple light-emitting elements 10A and 10B are grown on the substrate 100, in the vertical direction, some of the sub-light-emitting elements in the light-emitting element 10B will have slight position fluctuations. When the light-emitting element 10A is transferred and soldered to the soldering pad 800 on the driving backplane 20, the non-welding area around the soldering pad 800 will also correspond to the light-emitting element 10B, and the light-emitting element 10B will be used for the next round of transfer and soldering. In the prior art, please refer to Figure 4 , some of the sub-light emitting elements in the light emitting element 10B are in contact with the back plate body 600 due to position fluctuations. When transferring and welding the light emitting element 10A, some of the sub-light emitting elements in the light emitting element 10B will touch the back plate body 600. The slight adhesion of the back plate body 600 will cause some of the sub-light emitting elements in the light emitting element 10B to shift or fall off. In this way, some of the sub-light emitting elements in the light emitting element 10B cannot complete the subsequent transfer, and some of the sub-light emitting elements in the light emitting element 10B fall off to the back plate body 600, which also affects the back plate body 600. Please refer to Figure 3 In the present application, a layer of anti-adhesion layer 700 is provided in the area surrounding the solder pad 800 on the back panel body 600. In this way, when the light-emitting element 10A is transferred and welded, the light-emitting element 10B in the non-welding position touches the anti-adhesion layer 700 and will not shift or fall off, thereby ensuring the success rate of the transfer and welding of the light-emitting element 10.

[0050] For further information, see Figure 3 In the thickness direction of the back plate body 600, the pad 800 protrudes from the anti-adhesion layer 700. When the light emitting element 10 is transferred and welded, the light emitting element 10 first contacts the pad 800 at the position of the pad 800. The pad 800 protrudes from the anti-adhesion layer 700, which can reduce the possibility that the anti-adhesion layer 700 around the pad 800 contacts the light emitting element 10 at the corresponding position, thereby improving the success rate of transfer and welding.

[0051] In one embodiment, the height of the pad 800 protruding from the anti-adhesion layer 700 in the thickness direction of the backplane body 600 is in the range of 1um to 5um. For example, it can be 2um, 3um or 4um. On the one hand, the height does not need to be too low to ensure the success rate of transfer and welding. On the other hand, the height is not too high to better protect the pad 800.

[0052] In an optional embodiment, the thickness of the anti-adhesion layer 700 is greater than or equal to 0.5 um, so as to ensure the anti-adhesion effect of the anti-adhesion layer 700 , and the thickness of the pad 800 is greater than or equal to 2 um, so as to ensure the conductive contact effect of the pad 800 .

[0053] In some other implementations, the height of the pad 800 protruding from the adhesion-reducing layer 700 may be selected to be greater than 5 um.

[0054] Furthermore, the material of the adhesion reducing layer 700 includes at least one of silicon oxide, silicon nitride, and silicon oxynitride. The above materials can reduce adhesion with the first electrode 310 and the second electrode 320 of the light emitting element 10.

[0055] Of course, the adhesion reducing layer 700 may also be made of other materials as long as it can reduce adhesion between the first electrode 310 and the second electrode 320 .

[0056] The present application also provides a method for preparing a display panel, combining Figure 5 and Figure 6 , the method comprising:

[0057] S100: A light-emitting body 200 is formed on one side of a substrate 100, wherein the light-emitting body 200 includes a first semiconductor layer 210, a quantum well layer 220, and a second semiconductor layer 230 stacked in sequence in a direction away from the substrate 100, and a first groove 410A is provided on the surface of the light-emitting body 200 away from the substrate 100, and the first groove 410A penetrates the second semiconductor layer 230 and the quantum well layer 220 and is connected with the first semiconductor layer 210.

[0058] Specifically, the first semiconductor layer 210, quantum well layer 220, and second semiconductor layer 230 stacked in sequence can be prepared by MOCVD (metal organic chemical vapor deposition) to form the light-emitting body 200, and the first groove 410A can be prepared by photolithography technology to expose the first semiconductor layer 210 to facilitate electrical connection of external electrodes.

[0059] S200 : Filling the first groove 410A with a first conductive material 410 .

[0060] Specifically, the first conductive material 410 may be filled in the first groove 410A by thermal evaporation or sputtering. Filling the first groove 410A may facilitate electrical connection between the first semiconductor layer 210 and the external electrode.

[0061] S300 : forming a first electrode 310 and a second electrode 320 on the side of the light-emitting body 200 facing away from the substrate 100 to obtain a light-emitting element 10 , wherein the first electrode 310 is electrically connected to the first conductive material 410 , and the second electrode 320 is electrically connected to the second semiconductor layer 230 .

[0062] Specifically, the first electrode 310 and the second electrode 320 can be formed on the side of the light-emitting body 200 facing away from the substrate 100 by evaporation, and the first electrode 310 and the second electrode 320 can be prepared at the same time, so that the first electrode 310 is electrically connected to the first semiconductor layer 210, and the second electrode 320 is electrically connected to the second semiconductor layer 230. An electrical signal is applied to the first electrode 310 and the second electrode 320 by an external power supply, so that the light-emitting element 10 emits light.

[0063] Furthermore, before the above step S200, please refer to FIG. 6 , it also includes:

[0064] S110 : forming an insulating layer 500 at least on a side of the second semiconductor layer 230 facing away from the substrate 100 .

[0065] Specifically, an inorganic insulating layer may be formed by PECVD (plasma enhanced chemical vapor deposition), or an insulating layer may be formed by coating or printing, which may play a role in protecting the light-emitting body 200 .

[0066] Of course, in some implementations, it is also possible not to form the insulating layer 500 .

[0067] S120 : forming a second groove 420A penetrating through the insulating layer 500 .

[0068] Specifically, the second groove 420A is etched in the insulating layer 500 by photolithography technology, so that the second semiconductor layer 230 is exposed, which is convenient for electrical connection with external electrodes.

[0069] Furthermore, after the above step S200, the method further includes:

[0070] S210 : Filling the second groove 420A with a second conductive material 420 .

[0071] Specifically, the second conductive material 420 may be filled in the second groove 420A by thermal evaporation or sputtering. Filling the second groove 420A may facilitate electrical connection between the second semiconductor layer 230 and the external electrode.

[0072] For further information, please refer to Figure 7 After the light emitting element 10 is obtained in the above step S300, the method further includes:

[0073] S400: Provide a back plate body 600 , wherein a solder pad 800 is convexly disposed on a first surface A of the back plate body 600 .

[0074] Specifically, the pad 800 may be formed by sputtering or evaporation, and the pad 800 is electrically connected to the driving layer in the back panel body 600 .

[0075] S500 : forming an adhesion reducing layer 700 surrounding the pad 800 on the first surface A to obtain the driving back plate 20 .

[0076] Specifically, the adhesion reducing layer 700 may be formed by PECVD, and the adhesion reducing layer 700 may reduce adhesion to the first electrode 310 and the second electrode 320 .

[0077] S600 : transferring the light emitting element 10 to the driving backplane 20 , and electrically connecting the first electrode 310 , the second electrode 320 and the pad 800 .

[0078] Specifically, the light-emitting element 10 can be directly transferred from the substrate 100 to the driving backplane 20, or transferred to the driving backplane 20 through a temporary substrate. The transfer method can be laser peeling, static electricity, van der Waals force, elastic stamping or self-assembly technology, etc. During the transfer process, a receiving glue or flux is coated on the driving backplane 20, and then the light-emitting element 10 and the driving backplane 20 are welded by reflow soldering or laser welding. Through the above design, the problems of residual glue and cold solder joints during the transfer and welding process can be improved, and the success rate of transfer and welding can be increased.

[0079] Furthermore, the present application also protects a display panel, such as any of the above-mentioned light-emitting elements 10 and a driving backplane 20 electrically connected to the light-emitting element 10 .

[0080] The present invention can be any electronic device such as a watch, a virtual display terminal, etc., without limitation. The specific structure of the light emitting element 10 and the driving backplane 20 can refer to the above-mentioned related content and will not be repeated here.

[0081] The above description is only an embodiment of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A light emitting element, characterized in that: The light emitting element is grown on one side of the substrate, and the light emitting element comprises: A light-emitting body, located on one side of the substrate, includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer stacked in sequence in a direction away from the substrate, wherein a first groove is provided on a surface of the light-emitting body away from the substrate, and the first groove penetrates the second semiconductor layer and the quantum well layer and is connected to the first semiconductor layer; A first conductive material is filled in the first groove; The first electrode and the second electrode are arranged on the side of the light emitting body away from the substrate. The first electrode is electrically connected to the first conductive material, and the second electrode is electrically connected to the second semiconductor layer.

2. The light emitting element according to claim 1, characterized in that The light emitting element further comprises: The insulating layer is at least partially formed on the side of the second semiconductor layer away from the substrate, and is provided with a second groove connected to the second semiconductor layer. The second groove is filled with a second conductive material, and the second electrode is electrically connected to the second conductive material.

3. The light emitting element according to claim 2, characterized in that The insulating layer further extends onto a groove wall of the first groove.

4. The light emitting element according to claim 2, characterized in that The first electrode and the second electrode are made of the same material; And / or, the first conductive material is the same as the second conductive material.

5. The light emitting element according to claim 2, characterized in that: The orthographic projection of the first electrode on the substrate covers the orthographic projection of the first conductive material on the substrate; And / or, the orthographic projection of the second electrode on the substrate covers the orthographic projection of the second conductive material on the substrate.

6. A display panel, characterized in that: The invention comprises the light emitting element as claimed in any one of claims 1 to 5 and a driving backplane electrically connected to the light emitting element.

7. The display panel according to claim 6, characterized in that: The driving backplane comprises: A back plate body, wherein a solder pad is convexly disposed on a first surface of the back plate body; The anti-adhesion layer is arranged on the first surface of the back plate body and is arranged around the welding pad.

8. The display panel according to claim 7, characterized in that: In the thickness direction of the back plate body, the pad protrudes out of the adhesion reduction layer; Preferably, in the thickness direction of the backplane body, the height of the pad protruding from the adhesion reduction layer ranges from 1um to 5um; And / or, the material of the anti-adhesion layer includes at least one of silicon oxide, silicon nitride, and silicon oxynitride.

9. A method for preparing a display panel, characterized in that: The method comprises: A light-emitting body is formed on one side of the substrate, wherein the light-emitting body includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer stacked in sequence in a direction away from the substrate, and a first groove is provided on a surface of the light-emitting body away from the substrate, and the first groove penetrates the second semiconductor layer and the quantum well layer and is connected to the first semiconductor layer; Filling a first conductive material in the first groove; A first electrode and a second electrode are formed on a side of the light-emitting body away from the substrate to obtain a light-emitting element, wherein the first electrode is electrically connected to the first conductive material, and the second electrode is electrically connected to the second semiconductor layer.

10. The method for preparing a display panel according to claim 9, characterized in that: Before the step of filling the first groove with the first conductive material, the method further includes: forming an insulating layer at least on a side of the second semiconductor layer facing away from the substrate; forming a second groove penetrating the insulating layer; After the step of filling the first groove with the first conductive material, the method further includes: Filling a second conductive material in the second groove; Preferably, after obtaining the light-emitting element, the method further comprises: Providing a back plate body, wherein a solder pad is convexly disposed on a first surface of the back plate body; Forming an adhesion-reducing layer surrounding the pad on the first surface to obtain a driving backplane; The light emitting element is transferred to the driving backplane, and the first electrode, the second electrode and the pad are electrically connected.

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