Cleaning device and process for semiconductor stainless steel TTN film

Abstract

The invention discloses a semiconductor stainless steel TTN film cleaning device and process, the semiconductor stainless steel TTN film cleaning device comprises an automatic mechanical arm, a soaking basket, a chemical liquid mixing soaking tank I, a pure water rinsing tank, a high-pressure washing tank, a chemical liquid mixing soaking tank II, a pure water soaking tank and a blow-drying tank, and the automatic mechanical arm is arranged above all tank bodies; the working end is connected with the soaking basket, ultrasonic vibration plates are arranged in the first chemical liquid mixing soaking tank and the second chemical liquid mixing soaking tank, a high-pressure water washing nozzle is arranged in the high-pressure water washing tank, a CDA high-pressure nozzle is arranged in the blow-drying tank, and the automatic cleaning device is composed of the soaking tank, a pure water tank, high-pressure water washing, CDA blowing and the like. Components are not manually conveyed and cleaned in the soaking basket any more, the required operation tank body is selected, the equipment can quickly complete conveying and operation, the cleaning tank adopts an external circulation filtering device, the cleanness of circulating liquid medicine is ensured, and the corrosion-resistant ultrasonic vibration plate is adopted in the cleaning tank, so that the cleaning efficiency is improved. The cavitation effect, the acceleration effect and the direct inflow effect of ultrasonic waves in liquid are utilized for indirectly dispersing and stripping a dirt layer of the liquid, and the cleaning purpose is achieved. The whole cleaning device adopts closed-loop process operation, and the effectiveness of component cleaning is guaranteed.

Description

Technical Field

[0001] The invention relates to a cleaning device and process for a semiconductor stainless steel TTN film. Background Art

[0002] Ti is often used as an adhesion layer to improve the adhesion between the material and the substrate; as a barrier layer, Ti prevents the diffusion of metals such as copper at high temperatures, and TiN is often used for hard coatings on tools to improve wear resistance and service life. Metal TTN deposition uses the commonly used PVD method. The current cleaning process for stainless steel parts of TTN devices in the cleaning industry mainly uses a certain proportion of nitric acid and fluoric acid to remove surface deposits. The thickness of the deposits near the target position during the sputtering process is higher than that at other positions; therefore, during the immersion process, the deposits at the normal position have been cleaned, but the deposits at the top position close to the target have not been cleaned. The parts will choose to continue to immerse to achieve the purpose of cleaning the remaining deposits.

[0003] The existing cleaning process technology has two disadvantages: 1. The TTN device is immersed in the nitric and fluoric acid solution. Ti will react quickly with HF and heat up, and then generate Ti+ ions and further react with nitric acid. The nitric acid solution after the reaction generates nitric oxide. Part of the generated nitric oxide reacts with oxygen in the air to generate nitrogen dioxide. Nitrogen dioxide is toxic and irritating, and the environmental pollution caused by nitrogen dioxide is also diverse. 2. When the TTN device is immersed in the nitric and hydrofluoric acid solution, Ti will react quickly with HF and heat up. The high temperature state of the solution is highly dangerous and is not suitable for on-site personnel to operate. At the same time, the high temperature nitric and hydrofluoric acid solution will react with stainless steel, corrode the component body, and reduce the service life of the device components.

[0004] Comparative document, Chinese patent (application number: 2022106743356) "TiN removal solution", the removal solution is composed of an oxidant, a pH buffer, additive A, additive B and deionized water. The oxidant is hydrogen peroxide, the pH buffer is a mixture of organic acids and organic acid salts, additive A is ammonium persulfate, and additive B is a mixture of phenolsulfonic acid, alcohols, and metal masking agents. A large amount of chemical agents are used for TiN removal, and a large amount of chemical waste will be generated during the reaction. Summary of the invention

[0005] The object of the present invention is to provide a cleaning device and process for a semiconductor stainless steel TTN film to solve the problems raised in the above background technology.

[0006] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a semiconductor stainless steel TTN film cleaning device and process, the device comprising an automatic robotic arm, an immersion basket, a chemical mixed liquid immersion tank 1, a pure water rinsing tank, a high-pressure water washing tank, a chemical mixed liquid immersion tank 2, a pure water immersion tank and a blow-drying tank arranged in the order of process steps, the automatic robotic arm is arranged above all the tank bodies, and the working end is connected to the immersion basket, the chemical mixed liquid immersion tank 1 and the chemical mixed liquid immersion tank 2 are provided with ultrasonic vibration plates, the high-pressure water washing tank is provided with a high-pressure water washing nozzle, and the blow-drying tank is provided with a CDA high-pressure nozzle.

[0007] Preferably, chemical mixed liquid immersion tank one and chemical mixed liquid immersion tank two are provided with a liquid medicine circulation device, including a liquid outlet arranged at the bottom of the tank body, the liquid outlet is connected to the liquid medicine circulation reactor, the reactor is connected to the filter device, and the filter device is connected to the liquid inlet above the tank body, and the connections are all through pipelines, and a water pump is provided on the pipeline.

[0008] Preferably, the formula of the medicine solution in the reactor is ammonium fluoride, hydrogen peroxide, high-purity water, and hexamethylenetetramine, which are configured in a mass ratio of 2:8:8:1, and are circulated and stirred for 30 minutes after configuration.

[0009] Preferably, the cleaning process steps using the device are as follows: S1, turn on the circulation pump of the chemical mixed liquid immersion tank to circulate the liquid in the immersion tank and the liquid reactor; S2, then turn on all ultrasonic waves in the chemical mixture immersion tank, with a power density of >1w / in²; S3, lift the immersion basket and place it in the chemical mixture immersion tank 1, and the component immersion time is ≥5min; S4, lift the immersion basket in the chemical mixture immersion tank, and then suspend the immersion bar in the air for 2-5 minutes; S5, move the soaking basket and place it in the pure water rinsing tank, and soak the parts for 5-10 minutes; S6, the soaking basket is placed in a high-pressure water washing tank, and the high-pressure water washing time is 10-20min; S7, lift the immersion basket and place it in the chemical mixture immersion tank 2, and the component immersion time is ≥5min; S8, lift the immersion basket in the chemical mixture immersion tank 2, and then suspend the immersion bar in the air for 2-5 minutes; S9, move the immersion basket and place it in the pure water immersion tank, and soak the parts for 5-10 minutes; S10, the soaking basket is placed in the drying tank, and the drying time is 10-15 minutes.

[0010] Compared with the prior art, the beneficial effects of the present invention are as follows: the automatic cleaning device is composed of an immersion tank, a pure water tank, high-pressure water washing, CDA purging, etc. The components in the immersion basket are no longer manually transported and cleaned. By selecting the required operating tank body, the equipment can quickly complete the transport and operation. The cleaning tank adopts an external circulation filtration device to ensure the cleanliness of the circulating liquid. The anti-corrosion ultrasonic vibration plate used inside utilizes the cavitation effect, acceleration effect and straight flow effect of ultrasonic waves in the liquid to indirectly disperse and peel off the dirt layer of the liquid to achieve the cleaning purpose; the entire cleaning device adopts a closed-loop process operation to ensure the effectiveness of component cleaning.

[0011] The device can stack multiple components according to the size of the components, greatly improving the cleaning efficiency. At the same time, the equipment investment cost is reduced and the labor intensity of employees is reduced.

[0012] Compared with strong acids and ammonium bifluoride, ammonium fluoride has lower viscosity, higher vapor pressure, and is easy to volatilize. Therefore, using ammonium fluoride as a masking agent can reduce the risk of residual pollutants. At the same time, ammonium fluoride is less toxic and causes less harm to operators, so it has better safety. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic diagram of the structure of the present invention; Figure 2 This is a schematic diagram of a chemical mixed liquid immersion tank circulation device.

[0014] In the figure: 1 automatic robot arm, 2 immersion basket, 3 ultrasonic vibration plate, 4 chemical mixture immersion tank 1, 5 pure water rinsing tank, 6 high-pressure water washing tank, 7 chemical mixture immersion tank 2, 8 pure water immersion tank, 9 drying tank, 10 CDA high-pressure nozzle, 11 high-pressure water washing nozzle, 12 tank body, 13 water pump, 14 reaction kettle, 15 filtering device. DETAILED DESCRIPTION

[0015] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0016] See also Figure 1-2The present invention provides a technical solution: a semiconductor stainless steel TTN film cleaning device and process, the device comprises an automatic robot arm 1, an immersion basket 2, a chemical mixed liquid immersion tank 1 4, a pure water rinsing tank 5, a high-pressure water washing tank 6, a chemical mixed liquid immersion tank 2 7, a pure water immersion tank 8 and a blow-drying tank 9 arranged in the order of process steps, the automatic robot arm 1 is arranged above all tank bodies, and the working end is connected to the immersion basket 2, the chemical mixed liquid immersion tank 1 4 and the chemical mixed liquid immersion tank 2 7 are provided with an ultrasonic vibration plate 3, the high-pressure water washing tank 6 is provided with a high-pressure water washing nozzle 11, and the blow-drying tank 9 is provided with a CDA high-pressure nozzle 10.

[0017] Chemical mixed liquid immersion tank 1 4 and chemical mixed liquid immersion tank 2 7 are provided with a liquid circulation device, including a liquid outlet arranged at the bottom of the tank body 12, the liquid outlet is connected to the reactor 14, the reactor 14 is connected to the filter device 15, and the filter device 15 is connected to the liquid inlet above the tank body. The connections are all through pipelines, and a water pump 13 is provided on the pipeline.

[0018] The formula of the medicine in the reactor is ammonium fluoride, hydrogen peroxide, high-purity water, and hexamethylenetetramine, which are configured in a mass ratio of 2:8:8:1. After configuration, the medicine is circulated and stirred for 30 minutes; the medicine in the reactor can maintain the concentration of the medicine in the chemical mixed liquid immersion tank.

[0019] The cleaning process steps using this device are as follows: S1, turn on the circulation pump of the chemical mixed liquid immersion tank to circulate the liquid in the immersion tank and the liquid reactor; S2, then turn on all ultrasonic waves in the chemical mixture immersion tank, with a power density of >1w / in²; S3, lift the immersion basket and place it in the chemical mixture immersion tank 1, and the component immersion time is ≥5min; S4, lift the immersion basket in the chemical mixture immersion tank, and then suspend the immersion bar in the air for 2-5 minutes; S5, move the soaking basket and place it in the pure water rinsing tank, and soak the parts for 5-10 minutes; S6, the soaking basket is placed in a high-pressure water washing tank, and the high-pressure water washing time is 10-20min; S7, lift the immersion basket and place it in the chemical mixture immersion tank 2, and the component immersion time is ≥5min; S8, lift the immersion basket in the chemical mixture immersion tank 2, and then suspend the immersion bar in the air for 2-5 minutes; S9, move the immersion basket and place it in the pure water immersion tank, and the parts are immersed for 5-10 minutes; S10, the soaking basket is placed in the drying tank, and the drying time is 10-15 minutes.

[0020] The automatic cleaning device consists of an immersion tank, a pure water tank, a high-pressure water wash, and a CDA purge. The parts in the immersion basket are no longer manually transported and cleaned. After selecting the required operation tank, the equipment can quickly complete the transport and operation. The cleaning tank adopts an external circulation filter device to ensure the cleanliness of the circulating liquid. The anti-corrosion ultrasonic vibration plate used inside uses the cavitation effect, acceleration effect, and straight flow effect of ultrasonic waves in the liquid to indirectly disperse and peel off the dirt layer of the liquid to achieve the cleaning purpose; the entire cleaning device adopts a closed-loop process operation to ensure the effectiveness of component cleaning. The device can stack multiple components according to the size of the components, greatly improving the cleaning efficiency. At the same time, the equipment investment cost is reduced and the labor intensity of employees is reduced.

[0021] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor stainless steel TTN film cleaning device and process, characterized by: The device comprises an automatic mechanical arm, an immersion basket, a chemical mixed liquid immersion tank 1, a pure water rinsing tank, a high-pressure water washing tank, a chemical mixed liquid immersion tank 2, a pure water immersion tank and a blow-drying tank arranged in the order of process steps, the automatic mechanical arm is arranged above all tank bodies, and the working end is connected to the immersion basket, the chemical mixed liquid immersion tank 1 and the chemical mixed liquid immersion tank 2 are provided with ultrasonic vibration plates, the high-pressure water washing tank is provided with a high-pressure water washing nozzle, and the blow-drying tank is provided with a CDA high-pressure nozzle.

2. The semiconductor stainless steel TTN film cleaning device and process according to claim 1, characterized in that: The chemical mixed liquid immersion tank 1 and the chemical mixed liquid immersion tank 2 are provided with a liquid medicine circulation device, including a liquid outlet arranged at the bottom of the tank body, the liquid outlet is connected to the liquid medicine circulation reactor, the reactor is connected to the filter device, and the filter device is connected to the liquid inlet above the tank body. The connections are all through pipelines, and a water pump is provided on the pipeline.

3. The cleaning device and process of a semiconductor stainless steel TTN film according to claim 2 is characterized in that: The formula of the medicine solution in the reaction kettle is ammonium fluoride, hydrogen peroxide, high-purity water, and hexamethylenetetramine, which are configured in a mass ratio of 2:8:8:1, and are circulated and stirred for 30 minutes after configuration.

4. The cleaning device and process of a semiconductor stainless steel TTN film according to claim 1, characterized in that: The cleaning process steps using this device are as follows: S1, turn on the circulation pump of the chemical mixed liquid immersion tank to circulate the liquid in the immersion tank and the liquid reactor; S2, then turn on all ultrasonic waves in the chemical mixture immersion tank, with a power density of >1w / in²; S3, lift the immersion basket and place it in the chemical mixture immersion tank 1, and the component immersion time is ≥5min; S4, lift the immersion basket in the chemical mixture immersion tank, and then suspend the immersion bar in the air for 2-5 minutes; S5, move the soaking basket and place it in the pure water rinsing tank, and soak the parts for 5-10 minutes; S6, the soaking basket is placed in a high-pressure water washing tank, and the high-pressure water washing time is 10-20min; S7, lift the immersion basket and place it in the chemical mixture immersion tank 2, and the component immersion time is ≥5min; S8, lift the immersion basket in the chemical mixture immersion tank 2, and then suspend the immersion bar in the air for 2-5 minutes; S9, move the immersion basket and place it in the pure water immersion tank, and soak the parts for 5-10 minutes; S10, the soaking basket is placed in the drying tank, and the drying time is 10-15 minutes.

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