Device and method for recovering phosphorus and indium by using semiconductor indium phosphide

Abstract

A device and a method for recovering phosphorus and indium by using semiconductor indium phosphide belong to the technical field of semiconductor materials, and the device comprises a sealed furnace body, a crucible in the furnace body, a cooling cylinder and a cooling device at the upper part of the furnace body, and a charging barrel and a heating device which are arranged in the center of the cooling cylinder, and an exhaust hole and a drainage hole are formed in the charging barrel. Indium phosphide in the charging barrel is decomposed into phosphorus and indium by heating the charging barrel, phosphorus gas is discharged through the exhaust holes and deposited on the inner wall of the cooling barrel, liquid indium drips into the crucible through the indium discharging holes, and then indium in the crucible grows and is pulled out through quartz seed crystals. By using the device and the method provided by the invention, the indium phosphide recovery operation is simple, the efficiency is high, and the material polluting the environment in the recovery process is environment-friendly; the device is not damaged in the recovery process and can be repeatedly used; in the recovery process, the indium is primarily purified, so that the pollution to the indium in the recovery process is avoided.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a device and a method for recovering phosphorus and indium by using semiconductor indium phosphide. Background Art

[0002] Indium phosphide is an important compound semiconductor material, which is widely used in the microelectronics and optoelectronics industries. The global consumption of indium phosphide crystal materials is very large.

[0003] The yield rate of InP single crystal is very low. In the process of growing InP crystal, the raw materials are reused. With the repeated use of raw materials, the purity will be greatly reduced, and even eventually it will become unusable. In the process of preparing InP single crystal, a large amount of InP waste will be generated.

[0004] Indium is a rare metal, and the preparation of phosphorus is highly polluting, so it is very necessary to recycle and reuse indium and phosphorus.

[0005] In the prior art, the recovery of indium from indium phosphide will cause certain phosphorus pollution, especially when the chlorination method is used for recovery, which will produce flammable and highly toxic phosphine.

[0006] At present, the main processes for treating indium phosphide waste are wet oxidation acid leaching and vacuum high temperature decomposition. In the wet acid leaching process, after leaching with inorganic acid and oxidant, the metal indium is recovered from the leachate by reduction, and the phosphorus is treated with sewage after reduction, which causes a huge waste of resources and increases the cost of sewage treatment. In addition, the oxidation reaction with acid easily produces highly toxic gas PH3, which threatens the life safety of personnel. For example, Chinese patent CN106319224B proposes a method for recovering indium, which uses the property of indium phosphide that it is slightly soluble in mineral acid, and uses acidic leachate to recover indium from indium phosphide in semiconductor waste.

[0007] The vacuum high-temperature decomposition process is to place the indium phosphide waste in a vacuum furnace and heat it at high temperature to decompose the indium phosphide to obtain liquid indium and gaseous phosphorus, which is absorbed by an absorption liquid. U.S. Patent No. 6126719 discloses a method for recovering group IIIA elements from group III-V compounds by vacuum decomposition, in which the phosphorus vapor produced by the decomposition of indium phosphide is absorbed by a transition metal sulfate solution, which will produce a large amount of phosphorus-containing residues and sulfuric acid waste liquid, with a low resource recovery rate and increased residue and waste liquid treatment costs.

[0008] Chinese patent CN106586988B discloses a method for comprehensive recovery of indium and phosphorus from indium phosphide waste, wherein the indium phosphide waste is placed in a reaction boat, the reaction boat is placed at one end of a quartz tube, the quartz tube is placed in a vacuum tube furnace, an inert gas is introduced into the quartz tube to replace the air in the tube, and when the air in the tube is completely replaced, vacuum is drawn, the quartz tube is sealed, and heating is started according to a two-temperature zone heating program; after heating, the temperature is lowered according to the program, and after it drops to room temperature, the quartz tube is taken out to obtain indium and red phosphorus. This method uses a disposable quartz tube, and the production cost is relatively high; after the indium phosphide is decomposed, the phosphorus gas spreads in the quartz tube, and it cannot be guaranteed to be gathered within the temperature zone 2; the indium remains in the quartz boat and is mixed with the original impurities, and the purity is low.

[0009] Chinese patent application 202210129275.X proposes a method for recovering indium from indium phosphide, which is to mix indium phosphide powder and iron powder, heat them for high-temperature solid-phase reaction, cool them to the chlorination reaction temperature after the high-temperature solid-phase reaction is completed, and introduce hydrogen chloride gas for chlorination and volatilization of indium chloride gas. The obtained indium chloride gas is recovered by condensation.

[0010] Chinese patent CN116177505B proposes a method for efficiently recovering indium and phosphorus from indium phosphide waste in a molten salt system. The method is to thermally decompose the indium phosphide waste in a molten salt system under normal pressure conditions, and the simultaneous recovery of metallic indium and elemental phosphorus can be achieved through a one-step reaction.

[0011] The above method requires the participation of auxiliary materials and may cause pollution. Summary of the invention

[0012] In order to overcome the defects of the prior art, this application is proposed.

[0013] In order to achieve the purpose of the invention, this application adopts the following technical solutions.

[0014] On the one hand, the present invention proposes a device for recovering phosphorus and indium using semiconductor indium phosphide, including a sealed furnace body, a crucible arranged at the bottom of the furnace body and a main heater around the crucible, and a vacuum valve arranged on the side wall of the furnace body to connect the pipeline. The device also includes an observation window arranged inside the crucible, a cooling cylinder and a cooling device arranged at the top of the upper part of the furnace body with a through hole, a loading barrel and a heating device arranged at the center of the cooling cylinder through the through hole via a lifting rod, the loading barrel and the cooling cylinder are equipped with a temperature measuring device, the lower opening position of the cooling cylinder corresponds to the upper opening of the crucible, and the loading barrel is provided with an exhaust hole and a drainage hole.

[0015] Furthermore, the cooling device includes a cooling pipe arranged inside the cooling cylinder, a refrigerant inlet and a refrigerant outlet connected to the cooling pipe, and the refrigerant inlet and the refrigerant outlet extend out of the furnace body and are connected to external pipelines.

[0016] Furthermore, the heating device includes an induction coil arranged on the periphery of the cooling cylinder, and the induction coil heats the object in the charging barrel.

[0017] Furthermore, the temperature measuring device supporting the charging barrel includes a first infrared thermometer arranged from the top of the furnace body, and the first infrared thermometer is aligned with the top of the charging barrel through a hole; the temperature measuring device supporting the cooling cylinder includes a second infrared thermometer that can move horizontally through the side wall of the furnace body and a temperature measuring hole arranged on the side wall of the cooling cylinder and corresponding to the position of the second infrared thermometer, and the end of the temperature measuring hole is 2-10mm away from the inner surface of the cooling cylinder.

[0018] Furthermore, the loading barrel is composed of an upper cover and a barrel body, an upper assembly end is arranged below the top edge of the upper cover, a lower assembly end matching the upper assembly end is arranged on the top of the barrel body, and an indium backflow groove is arranged at the bottom; the upper cover and the barrel body are assembled together through the upper assembly end and the lower assembly end; the exhaust holes include a plurality of upper exhaust holes arranged on the top of the upper cover and a plurality of side exhaust holes arranged on the side of the barrel body, and the drainage holes include a plurality of indium drainage holes arranged on the indium backflow groove.

[0019] On the other hand, based on the above device, the present invention also proposes a method for recovering phosphorus and indium using semiconductor indium phosphide, comprising the following steps: Furnace loading: The crucible is supported and placed in the furnace body by a crucible support, a main heater is arranged outside, and an insulation sleeve is arranged outside the main heater; a temperature measuring thermocouple passes through the insulation sleeve and contacts the crucible; an observation window is installed; a charging barrel is placed, and semiconductor indium phosphide to be recycled is placed inside the charging barrel; a seed crystal chuck for clamping quartz seed crystals is installed in the seed crystal chuck assembly hole; a first infrared thermometer is installed; a cooling cylinder is installed in the furnace body; a refrigerant inlet and a refrigerant outlet are connected to external pipelines; an induction coil is placed; a second infrared thermometer is installed, and the second infrared thermometer is moved horizontally and inserted into the temperature measuring hole; and the furnace body is sealed.

[0020] Decomposition: Evacuate the furnace to 10 -5The invention relates to a method for preparing a crucible comprising: starting the induction coil and the main heater for heating, measuring the temperature of the inner surface of the charging barrel and the cooling cylinder by means of the first infrared thermometer and the second infrared thermometer, and measuring the temperature of the crucible by means of the temperature measuring thermocouple; adjusting the power of the induction coil so that the temperature of the charging barrel reaches above 800°C, and at the same time controlling the refrigerant speed by adjusting the refrigerant inlet and the refrigerant outlet, and controlling the temperature of the inner surface of the cooling cylinder to be between 280°C and 500°C; adjusting the power of the main heater at the same time so that the displayed temperature of the temperature measuring thermocouple is between 700°C and 900°C; indium phosphide placed in the charging barrel is decomposed into phosphorus gas and liquid indium by heat, and the phosphorus gas is discharged through the exhaust hole and finally deposited on the inner wall of the cooling cylinder; the liquid indium flows into the indium backflow trough and drips into the crucible through the indium discharge hole; and continuously induction heating the charging barrel until no more indium is dripped as observed through the observation window.

[0021] Purifying indium: Stop the induction coil and lower the lifting rod until the quartz seed crystal contacts the separated indium melt. Then reduce the power of the main heater until indium starts to grow on the quartz seed crystal. Then move the lifting rod upward to pull the indium ingot out of the crucible.

[0022] Dismantling the furnace: stop the main heater from heating; vent the furnace, take out the cooling cylinder, indium ingot, charging barrel and crucible; soak the phosphorus inside the cooling cylinder in water for 5-10 hours, and then spray it with a water gun.

[0023] Furthermore, in the furnace charging step, boron oxide is placed in the crucible.

[0024] Furthermore, in the purification step, after stopping the induction coil, a gas replacement step is added: adjusting the refrigerant inlet and outlet, controlling the refrigerant speed, and controlling the temperature of the inner surface of the cooling cylinder to be less than 280°C; evacuating the furnace body to 10 -5 Pa~10Pa, then fill with inert gas to 0.1Mpa, repeat 1-3 times.

[0025] The present invention heats indium phosphide to above 800° C. in a charging barrel, collects phosphorus on a cooling cylinder, decomposes indium and flows into a crucible, and then pulls the indium in the crucible out of the crucible through a seed crystal, thereby achieving separation of indium and phosphorus and purification of indium.

[0026] Beneficial effects: The indium phosphide recycling operation is simple and efficient, and the materials that cause environmental pollution during the recycling process are environmentally friendly; the recycling process does not destroy the device, and the device can be reused; while recycling, the indium is preliminarily purified, avoiding the pollution of indium during the recycling process. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic diagram of the composition of the device of the present invention, Figure 2 This is a schematic diagram of the device after the decomposition of indium phosphide. Figure 3 It is a schematic diagram of the state of the purification step device. Figure 4 is a state diagram of another embodiment of the device, Figure 5 It is a schematic diagram of the structure of the charging barrel.

[0028] Among them, 1: furnace body; 2: refrigerant inlet; 3: lifting rod; 3-1: lifting rod driving motor; 4: refrigerant outlet; 5: cooling cylinder; 5-1: through hole; 6: induction coil; 7: vacuum gauge; 8: cooling pipe; 9: charging barrel; 9-1: side exhaust hole; 9-2: lower assembly end; 9-3: seed crystal chuck assembly hole; 9-4: indium backflow groove; 9-5: indium discharge hole; 9-6: upper exhaust hole; 9-7: upper assembly end; 10: indium phosphide; 11: observation window; 12: first infrared thermometer; 13: seed crystal chuck; 14: quartz seed crystal; 15: insulation sleeve; 16: temperature measuring thermocouple; 17: main heater; 18: crucible; 19: crucible support; 20: crucible support; 21: vacuum valve; 22: separated phosphorus; 23: separated indium melt; 24: indium ingot; 25: liquid boron oxide; 26: second infrared thermometer; 27: temperature measuring hole. DETAILED DESCRIPTION

[0029] A device for recovering phosphorus and indium using semiconductor indium phosphide, see Figure 1 , including a sealed furnace body 1, a crucible 18 arranged at the bottom of the furnace body 1 and a main heater 17 around the crucible 18, a vacuum valve 21 connected to a pipeline arranged on the side wall of the furnace body 1, and a vacuum gauge 7 arranged on the side wall of the furnace body 1.

[0030] The device also includes a cooling cylinder 5 and a cooling device arranged on the upper part of the furnace body 1. The cooling device includes a cooling pipe 8 arranged inside the cooling cylinder 5, a refrigerant inlet 2 and a refrigerant outlet 4 connected to the cooling pipe 8. The refrigerant inlet 2 and the refrigerant outlet 4 extend out of the furnace body 1 and are connected to external pipelines.

[0031] The device can use water cooling, using cooling water as the refrigerant, or air cooling, using air as the refrigerant.

[0032] The cooling cylinder 5 has a through hole 5-1 in the middle of the top and is open at the bottom. The charging barrel 9 is arranged at the central position of the cooling cylinder 5 through the lifting rod 3 passing through the through hole 5-1. The length of the charging barrel 9 is smaller than that of the cooling cylinder 5. The charging barrel 9 is equipped with a heating device. In this embodiment, the heating device equipped with the charging barrel 9 is an induction coil 6 arranged at the position corresponding to the charging barrel 9 on the periphery of the cooling cylinder 5. The induction coil 6 heats the object in the charging barrel 9 and has no effect on the cooling cylinder 5.

[0033] The charging barrel 9 and the cooling cylinder 5 are equipped with temperature measuring devices. In this embodiment, the temperature measuring device equipped with the charging barrel 9 includes a first infrared thermometer 12 set from the top of the furnace body 1, and the first infrared thermometer 12 is aligned with the top of the charging barrel 9 through the hole 5-1; the temperature measuring device equipped with the cooling cylinder 5 includes a second infrared thermometer 26 that passes through the side wall of the furnace body 1 and can move horizontally, and a temperature measuring hole 27 that is set on the side wall of the cooling cylinder 5 and corresponds to the position of the second infrared thermometer 26. The temperature measuring hole 27 does not penetrate the side wall of the cooling cylinder 5, and its end is 2-10mm away from the inner surface of the cooling cylinder 5. The inner diameter of the temperature measuring hole 27 is larger than the diameter of the second infrared thermometer 26.

[0034] The lower opening position of the cooling cylinder 5 corresponds to the upper opening of the crucible 18 , and the charging barrel 9 is provided with an exhaust hole and a discharge hole.

[0035] See also Figure 5 The loading barrel 9 is composed of an upper cover and a barrel body, an upper assembly end 9-7 is arranged below the top edge of the upper cover, a lower assembly end 9-2 cooperating with the upper assembly end 9-7 is arranged on the top of the barrel body, and an indium backflow groove 9-4 is arranged at the bottom; the upper cover and the barrel body are assembled together through the upper assembly end 9-7 and the lower assembly end 9-2.

[0036] The exhaust holes include a plurality of upper exhaust holes 9-6 arranged on the top of the upper cover and a plurality of side exhaust holes 9-1 arranged on the side of the barrel body, and the drainage holes include a plurality of indium drainage holes 9-5 arranged on the indium backflow groove 9-4.

[0037] A seed crystal chuck assembly hole 9 - 3 is also provided at the bottom of the barrel body, and a seed crystal chuck 13 for clamping a quartz seed crystal 14 is built in.

[0038] The device further comprises an observation window 11 which passes through the side wall of the furnace body 1 and has an observation port arranged inside the crucible 18 .

[0039] Based on the above device, the present invention proposes a method for recovering phosphorus and indium by using semiconductor indium phosphide.

[0040] Example 1.

[0041] Loading the furnace: In this embodiment, the furnace is loaded starting from the bottom device, but other loading sequences are not excluded.

[0042] Install the crucible: The crucible 18 is supported by the crucible support 20 and placed at the bottom of the furnace body 1. A main heater 17 is arranged outside the crucible 18, and an insulation sleeve 15 is arranged outside the main heater 17. A temperature measuring thermocouple 16 passes through the insulation sleeve 15 and contacts the crucible 18. An observation window 11 is installed.

[0043] Place the charging barrel 9: place the semiconductor indium phosphide 10 to be recycled inside the charging barrel 9; install the seed crystal chuck 13 for clamping the quartz seed crystal 14 in the seed crystal chuck assembly hole 9-3; connect the charging barrel 9 and the lifting rod 3, and set the charging barrel 9 inside the crucible 1 through the lifting rod 3; install the first infrared thermometer 12.

[0044] A cooling cylinder 5 is installed in the furnace body 1: the cooling cylinder 5 can be fixed on the inside of the furnace body 1 through the pipelines of the refrigerant inlet 2 and the refrigerant outlet 4; the refrigerant inlet 2 and the refrigerant outlet 4 are connected to the external pipeline, and the induction coil 6 is placed outside the cooling cylinder 5; the second infrared thermometer 26 is installed, the second infrared thermometer 26 is moved horizontally, and the second infrared thermometer 26 is inserted into the temperature measuring hole 27. The charging barrel 9 is located in the central position of the cooling cylinder 5.

[0045] The furnace body 1 is sealed.

[0046] After the furnace is loaded, the status of the device is as follows Figure 1 In the figure, the second infrared thermometer 26 is not inserted into the temperature measuring hole 27.

[0047] break down: The furnace body 1 is evacuated to 10 by vacuum valve 21. -5 Pa~10Pa.

[0048] The induction coil 6 and the main heater 17 are started to heat, the temperatures of the inner surfaces of the charging barrel 9 and the cooling cylinder 5 are measured by the first infrared thermometer 12 and the second infrared thermometer 26 , and the temperature of the crucible 18 is measured by the temperature measuring thermocouple 16 .

[0049] The power of the induction coil 6 is adjusted so that the temperature of the charging barrel 9 reaches above 800°C. At the same time, the refrigerant speed is controlled by adjusting the refrigerant inlet 2 and the refrigerant outlet 4, and the temperature of the inner surface of the cooling tube 5 is controlled between 280-500°C. At the same time, the power of the main heater 17 is adjusted so that the displayed temperature of the temperature measuring thermocouple 16 is between 700-900°C.

[0050] The indium phosphide 10 placed in the charging barrel 9 is heated to decompose phosphorus gas and liquid indium, and the phosphorus gas is discharged through the exhaust holes. The exhaust holes are arranged on the top and periphery of the charging barrel 9, including multiple upper exhaust holes 9-6 arranged on the top of the upper cover and multiple side exhaust holes 9-1 arranged on the side of the barrel body. The relative density of phosphorus is 2.34, the melting point is 590°C, and the temperature of the inner surface of the cooling cylinder 5 is between 280-500°C, ensuring that the separated phosphorus 22 condenses and deposits on the inner wall of the cooling cylinder 5. Liquid indium flows into the indium backflow trough 9-4, and drips into the crucible 18 through the indium discharge hole 9-5, as shown in the figure by the separated indium melt 23. When the indium melt drips, because the droplets are linear or water droplets and have a large specific surface area, the residual phosphorus is further quickly discharged from the indium melt in the process. Continue to induction heat the charging barrel 9 until no more indium is observed to drip through the observation window 11.

[0051] At this time, the indium phosphide 10 is completely decomposed, and the state of the device is as follows Figure 2 shown.

[0052] Purification of Indium: In the method proposed by the present invention, purifying indium is one of the innovative points.

[0053] The operation of the induction coil 6 is stopped.

[0054] The lifting rod driving motor 3-1 is started, and the lifting rod 3 is lowered until the quartz seed crystal 14 contacts the separated indium melt 23, and then the power of the main heater 17 is reduced until indium starts to grow on the quartz seed crystal 14; the lifting rod 3 moves upward, indium continues to grow, and the indium ingot 24 is pulled out of the crucible 18. In the indium purification step, the state of the device is as follows: Figure 3 shown.

[0055] Furnace dismantling: Stop heating by the main heater 17; vent the furnace body 1, take out the cooling cylinder 5, the indium ingot 24, the charging barrel 9 and the crucible 18; soak the phosphorus 22 separated inside the cooling cylinder 5 in water for 5-10 hours, and then spray it with a water gun; clean the crucible.

[0056] During the decomposition process, part of the phosphorus gas may not immediately condense on the inner wall of the cooling cylinder 5 and float freely inside the furnace body 1. This part of phosphorus may enter the indium melt 23 separated in the crucible 18, affecting the purity of indium.

[0057] In order to solve this problem, the present invention proposes Embodiment 2.

[0058] Example 2.

[0059] In the furnace charging step, boron oxide is placed in the crucible 18 .

[0060] In the decomposition step, the temperature of the crucible 18 reaches 700-900°C, the boron oxide melts, and the liquid indium drips into the crucible 18 through the indium discharge hole 9-5. The separated indium melt 23 is covered by the liquid boron oxide 25, isolating the phosphorus gas and preventing the phosphorus gas from entering the indium melt. At the same time, due to surface tension, trace impurities float on the surface of the liquid boron oxide 25 and are separated from the indium melt. In the indium purification step, the separated indium melt 23 is always below the liquid boron oxide 25. Figure 4 shown.

[0061] Example 3.

[0062] On the basis of Embodiment 1 or 2, in the purification step, after stopping the operation of the induction coil 6, a gas replacement step is added: adjusting the refrigerant inlet 2 and the refrigerant outlet 4, controlling the refrigerant speed, and controlling the temperature of the inner surface of the cooling cylinder 5 to be less than 280° C. The purpose of this is to accelerate the condensation of phosphorus gas, so that most of the phosphorus is deposited on the inner wall of the cooling cylinder 5 to reduce waste.

[0063] The furnace body 1 is evacuated to 10 by vacuum valve 21. -5 Pa~10Pa, then fill with inert gas to 0.1Mpa, repeat 1-3 times.

[0064] Through the gas replacement step, the phosphorus gas in the furnace body 1 is discharged to prevent the influence of the phosphorus gas on indium.

[0065] Based on Example 1, without using boron oxide covering, phosphorus will also escape from the indium melt during the vacuuming process.

[0066] In the above embodiment, all the indium in the crucible can be extracted in the purification step, but there are impurities in the separated indium melt 23, which will gather at the end, so the purity of the indium at the bottom of the ingot 24 is not high. The part of the indium with more impurities at the bottom can be removed later, but the process steps will be increased.

[0067] In order to obtain indium with consistent purity, the present invention proposes the following embodiments.

[0068] Example 4.

[0069] In the step of purifying indium, after 95-98% of the indium in the crucible 18 is pulled out, the lifting rod 3 is raised, the indium ingot 24 is separated from the indium melt 23 separated from the crucible, and the impurities are partially removed by condensation.

[0070] In the furnace dismantling step, the contents of the crucible 18 are heated and poured out, then corroded with dilute hydrochloric acid and dried.

[0071] Although this embodiment loses a small amount of indium, its purity is greatly increased.

[0072] By using the device and method proposed in the present invention, the recovery rate of indium can reach more than 90%, and the purity of indium can reach more than 99.9at.%.

Claims

1. A device for recovering phosphorus and indium using semiconductor indium phosphide, comprising a sealed furnace body (1), a crucible (18) arranged at the bottom of the furnace body (1), a main heater (17) around the crucible (18), and a vacuum valve (21) arranged on the side wall of the furnace body (1) and connected to a pipeline, characterized in that: The device also includes an observation window (11) arranged inside the crucible (18), a cooling cylinder (5) and a cooling device arranged at the top of the upper part of the furnace body (1) and having a through hole (5-1), a charging barrel (9) and a heating device arranged at the center of the cooling cylinder (5) through the through hole (5-1) via a lifting rod (3), the charging barrel (9) and the cooling cylinder (5) being equipped with a temperature measuring device, the lower opening position of the cooling cylinder (5) corresponding to the upper opening of the crucible (18), and the charging barrel (9) being provided with an exhaust hole and a discharge hole.

2. The device according to claim 1, characterized in that The cooling device comprises a cooling pipe (8) arranged inside a cooling tube (5), a refrigerant inlet (2) and a refrigerant outlet (4) connected to the cooling pipe (8); the refrigerant inlet (2) and the refrigerant outlet (4) extend out of the furnace body (1) and are connected to an external pipeline.

3. The device according to claim 1, characterized in that The heating device comprises an induction coil (6) arranged on the periphery of the cooling cylinder (5), and the induction coil (6) heats the object in the charging barrel (9).

4. The device according to claim 1, characterized in that The temperature measuring device matched with the charging barrel (9) comprises a first infrared thermometer (12) arranged from the top of the furnace body (1), and the first infrared thermometer (12) is aligned with the top of the charging barrel (9) through the through hole (5-1); the temperature measuring device matched with the cooling cylinder (5) comprises a second infrared thermometer (26) that passes through the side wall of the furnace body (1) and can move horizontally, and a temperature measuring hole (27) arranged on the side wall of the cooling cylinder (5) and corresponding to the position of the second infrared thermometer (26), and the end of the temperature measuring hole (27) is 2-10 mm away from the inner surface of the cooling cylinder (5).

5. The device according to any one of claims 1 to 4, characterized in that: The charging barrel (9) is composed of an upper cover and a barrel body, an upper assembly end (9-7) is arranged below the top edge of the upper cover, a lower assembly end (9-2) matching with the upper assembly end (9-7) is arranged at the top of the barrel body, and an indium backflow groove (9-4) is arranged at the bottom; the upper cover and the barrel body are assembled together via the upper assembly end (9-7) and the lower assembly end (9-2); The exhaust holes include a plurality of upper exhaust holes (9-6) arranged on the top of the upper cover and a plurality of side exhaust holes (9-1) arranged on the side of the barrel body, and the drainage holes include a plurality of indium drainage holes (9-5) arranged on the indium backflow groove (9-4).

6. The device according to claim 5, characterized in that A seed crystal chuck assembly hole (9-3) is provided at the bottom of the barrel body, and a seed crystal chuck (13) for clamping a quartz seed crystal (14) is built therein.

7. A method for recovering phosphorus and indium using semiconductor indium phosphide, characterized in that: The following steps are involved: Loading the furnace: The crucible (18) is supported by a crucible support (20) and placed in the furnace body (1). A main heater (17) is arranged outside the furnace body, and a heat preservation sleeve (15) is arranged outside the main heater (17). A temperature measuring thermocouple (16) passes through the heat preservation sleeve (15) and contacts the crucible (18). An observation window (11) is installed. A loading barrel (9) is placed, and semiconductor indium phosphide (10) to be recycled is placed inside the loading barrel (9); a seed crystal chuck (13) for clamping a quartz seed crystal (14) is installed in the seed crystal chuck assembly hole (9-3); and a first infrared thermometer (12) is installed; A cooling cylinder (5) is installed in the furnace body (1); the refrigerant inlet (2) and the refrigerant outlet (4) are connected to external pipelines; an induction coil (6) is placed; a second infrared thermometer (26) is installed, and the second infrared thermometer (26) is moved horizontally and inserted into the temperature measuring hole (27); Sealing the furnace body (1); break down: The furnace body (1) is evacuated to 10°C via the vacuum valve (21). -5 Pa~10Pa; The induction coil (6) and the main heater (17) are started to heat, the temperatures of the inner surfaces of the charging barrel (9) and the cooling cylinder (5) are measured by a first infrared thermometer (12) and a second infrared thermometer (26), and the temperature of the crucible (18) is measured by a temperature measuring thermocouple (16); The power of the induction coil (6) is adjusted so that the temperature of the charging barrel (9) reaches above 800°C. At the same time, the refrigerant speed is controlled by adjusting the refrigerant inlet (2) and the refrigerant outlet (4), and the temperature of the inner surface of the cooling cylinder (5) is controlled between 280°C and 500°C. At the same time, the power of the main heater (17) is adjusted so that the temperature displayed by the temperature measuring thermocouple (16) is between 700°C and 900°C. The indium phosphide (10) placed in the charging barrel (9) is decomposed into phosphorus gas and liquid indium when heated, and the phosphorus gas is discharged through the exhaust hole and finally deposited on the inner wall of the cooling cylinder (5); the liquid indium flows into the indium backflow groove (9-4) and drips into the crucible (18) through the indium discharge hole (9-5); the charging barrel (9) is continuously inductively heated until no indium drips as observed through the observation window (11); Purification of Indium: Stopping the operation of the induction coil (6); Lowering the lifting rod (3) until the quartz seed crystal (14) contacts the separated indium melt (23), then lowering the power of the main heater (17) until indium starts to grow on the quartz seed crystal (14), and then moving the lifting rod (3) upward to pull the indium ingot (24) out of the crucible (18); Furnace dismantling: Stop the main heater (17) from heating; Deflate the furnace body (1), and take out the cooling cylinder (5), the indium ingot (24), the charging barrel (9), and the crucible (18); Soak the phosphorus inside the cooling cylinder (5) in water for 5-10 hours and then spray it with a water gun.

8. The method according to claim 7, characterized in that In the furnace charging step, boron oxide is placed in the crucible (18).

9. The method according to claim 7 or 8, characterized in that: In the purification step, after stopping the operation of the induction coil (6), a gas replacement step is added: Adjust the refrigerant inlet (2) and the refrigerant outlet (4), control the refrigerant velocity, and control the temperature of the inner surface of the cooling cylinder (5) to be less than 280°C; The furnace body (1) is evacuated to 10°C via the vacuum valve (21). -5 Pa~10Pa, then fill with inert gas to 0.1Mpa, repeat 1-3 times.

10. The method according to claim 9, characterized in that In the step of purifying indium, after 95-98% of the indium in the crucible (18) is pulled out, the lifting rod (3) is raised, the indium ingot (24) is separated from the indium melt (23) separated from the crucible, and impurities are partially removed by condensation; In the furnace dismantling step, the material in the crucible (18) is finally heated and poured out, and then corroded with dilute hydrochloric acid and dried.

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