Rare earth silicate glass and preparation method thereof, glass substrate and application

Abstract

The present invention provides a rare earth silicate glass and a preparation method thereof, a glass substrate and applications. The rare earth silicate glass comprises components: silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, and the rare earth oxides include one or more of oxides composed of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium. Among them, 99.5% ≤ the mass percentage content of (silicon dioxide + boron oxide + potassium oxide + aluminum oxide) ≤ 99.9%. The expansion coefficient of the rare earth silicate glass is close to that of a single crystal silicon wafer, the expansion curve is close to that of a single crystal silicon wafer, chip damage caused by differences in expansion coefficients can be avoided during use, the service life is extended, and it has a stable dielectric constant and dielectric loss.

Description

Technical Field

[0001] The present invention relates to the technical field of glass production, and in particular to a rare earth silicate glass and a preparation method thereof, a glass substrate and an application thereof. Background Art

[0002] With the development of the economy and the progress of technology, various devices are developing towards the characteristics of multi-functional integration, miniaturization, reliability, stability, environmental protection, etc. At present, high-power chip packaging devices can be used in the fields of aerospace, microwave communication, electronic components, etc. With the development of devices towards multi-functional integration, miniaturization and light weight, traditional chip packaging is difficult to meet the reliability requirements of current devices.

[0003] The traditional chip packaging process is used for installing semiconductor integrated circuit chips. The substrate is made of PCB resin material, and the substrate plays the roles of conducting electricity, fixing, sealing, protecting the chip and dissipating heat. Chip packaging includes the process steps of wafer dicing, chip mounting, wire bonding, injection molding, and package testing.

[0004] However, the organic substrate made of PCB resin material has defects such as low thermal conductivity, high dielectric loss, and slow signal transmission speed. Therefore, the above organic substrate is not suitable for application in high-power devices. Summary of the Invention

[0005] The purpose of the present invention is to provide a rare earth silicate glass, whose expansion coefficient is close to that of a single crystal silicon wafer, the expansion curve is close to that of a single crystal silicon wafer, chip damage caused by differences in expansion coefficients can be avoided during use, the service life can be extended, and it has a stable dielectric constant and dielectric loss. The glass substrate formed by the rare earth silicate glass provided in this application is beneficial for chip architecture engineers to create higher-density and higher-performance chip packaging, provides strong support for the production of data-intensive chips such as artificial intelligence, and is more suitable for application in high-power devices.

[0006] The present application provides a rare earth silicate glass, which comprises the following components by mass percentage: 77% ≤ silicon dioxide ≤ 80%, 16% ≤ boron oxide ≤ 20%, 1.5% ≤ potassium oxide ≤ 2.7%, 1.3% ≤ aluminum oxide ≤ 1.6%, and 0.05% < rare earth oxide ≤ 0.5%;

[0007] wherein, 99.5% ≤ silicon dioxide + boron oxide + potassium oxide + aluminum oxide ≤ 99.9%;

[0008] The rare earth oxide includes one or more of the oxides composed of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium;

[0009] Tested under the environment of 20°C and 1 MHz, the dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is less than 0.0006, and when the environmental temperature changes within 20°C ± 10°C, the dielectric constant of the rare earth silicate glass shows no volatility.

[0010] In one embodiment, the rare earth oxide is a mixture of cerium oxide and samarium oxide;

[0011] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0012] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0013] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide and dysprosium oxide;

[0014] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide;

[0015] The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide;

[0016] The rare earth oxide is a mixture of dysprosium oxide and neodymium oxide;

[0017] The rare earth oxide is a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide; or,

[0018] The rare earth oxide is a mixture of cerium oxide, dysprosium oxide and neodymium oxide.

[0019] In one embodiment, the metal impurity concentrations in the silica, boron oxide, potassium oxide, alumina and rare earth oxide are all less than 100 ppm.

[0020] This application also provides a method for preparing rare earth silicate glass, including:

[0021] S1, providing silica, boron oxide, potassium oxide, alumina and rare earth oxide, and mixing them according to the mass percentage content described in any one of the above to form mixed particles;

[0022] S2, putting the mixed particles into a crucible for dissolution, where a high temperature of 1450°C to 1600°C is used during dissolution, melting and homogenizing for 32 to 48 hours, injecting the glass liquid into distilled water at room temperature for cooling within 2 minutes to form preformed glass, and then crushing the glass into preformed glass powder with a particle size of 1 to 3 microns;

[0023] S3, putting the preformed glass powder into a forming container and heating to form rare earth silicate glass;

[0024] The rare earth silicate glass formed by the above preparation method, when tested at 20°C and 1 MHz, has a dielectric constant of 4.1, a dielectric loss less than 0.0006, and when the environmental temperature changes from 20°C ± 10°C, the dielectric constant of the rare earth silicate glass has no fluctuation.

[0025] In one embodiment, the rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide, and neodymium oxide;

[0026] In S2, when dissolving the mixed particles in a crucible, the temperature is raised to 1460°C ± 10°C at a heating rate of 50°C / min and maintained at 1460°C ± 10°C for 40 hours, so that chemical bonds are formed between the rare earth oxide and the silicon dioxide, boron oxide, potassium oxide, and aluminum oxide.

[0027] In one embodiment, the rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide, and neodymium oxide;

[0028] In S2, when dissolving the mixed particles in a crucible, the temperature is raised to 1580°C ± 10°C at a heating rate of 100°C / min and maintained at 1580°C ± 10°C for 32 hours; special chemical bonds are formed between the rare earth oxide and the silicon dioxide, boron oxide, potassium oxide, and aluminum oxide.

[0029] In one embodiment, in S3, the preformed glass can also be rolled into a glass sheet by rolling the preformed glass.

[0030] This application also provides a glass substrate, which includes glass plate layers and glass paste layers alternately stacked from bottom to top in sequence. Among them, the number of glass plate layers is equal to the number of glass paste layers plus one;

[0031] The glass plate layer includes: a first metal layer, a single glass plate layer, and a second metal layer stacked in sequence; among them, the materials of the first metal layer and the second metal layer are one or more of titanium, nickel, copper, or indium oxide, and the single glass plate layer is the rare earth silicate glass described in any of the above items.

[0032] In one embodiment, the glass substrate includes a plurality of via holes, and the maximum penetration depth of the plurality of via holes is equal to the sum of the thicknesses of the glass plate layer and the glass paste layer;

[0033] The diameter of the via hole is 0.03 mm - 0.07 mm, and the distance between any two adjacent via holes is greater than or equal to 0.04 mm.

[0034] The present application also provides an application of a glass substrate, where the glass substrate described in any of the above is applied to a packaging structure of an artificial intelligence computing power chip, a photonic chip, a high-power solid-state laser chip, a 6G transmission chip, or a high-power radar chip.

[0035] The rare earth silicate glass provided by the present application has the following beneficial effects:

[0036] 1. The rare earth silicate glass provided by the present application includes components: silicon dioxide, boron oxide, potassium oxide, aluminum oxide, and rare earth oxides. The rare earth oxides include one or more of the oxides composed of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, or yttrium. Among them, 99.5% ≤ the mass percentage content of (silicon dioxide + boron oxide + potassium oxide + aluminum oxide) ≤ 99.9%. The expansion coefficient of this rare earth silicate glass is close to that of a single crystal silicon wafer, the expansion curve is close to that of a single crystal silicon wafer, chip damage caused by differences in expansion coefficients can be avoided during use, the service life can be extended, and it has a stable dielectric constant and dielectric loss.

[0037] 2. The rare earth silicate glass formed by using the preparation method of the rare earth silicate glass provided by the present application has an expansion coefficient close to that of a single crystal silicon wafer, an expansion curve close to that of a single crystal silicon wafer, chip damage caused by differences in expansion coefficients can be avoided during use, the service life can be extended, and it has a stable dielectric constant and dielectric loss. The rare earth silicate glass prepared by the above method is more conducive to chip architecture engineers to create higher-density and higher-performance chip packages, provides strong support for the production of data-intensive chips such as artificial intelligence, and is more suitable for application in high-power devices.

[0038] 3. The advantages of the rare earth silicate glass substrate provided by the present application compared to a PCB substrate are: high thermal conductivity, small signal loss, stable dielectric constant, fast signal transmission, a 30% increase in chip layout on a substrate of the same area, an expansion coefficient close to that of a chip wafer, high reliability, large wiring density, the via density can be increased by 5 to 10 times, the warpage is reduced by 30 times, and the range of use environments is wider. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0040] Figure 1 It is a test chart of the expansion coefficient of the rare earth silicate glass provided in Embodiment 2 of the present invention;

[0041] Figure 2 Dielectric loss test chart of the rare earth silicate glass provided by Embodiments 1-7 and Comparative Examples 8-9 of the present invention;

[0042] Figure 3 Schematic diagram of the glass substrate provided by the embodiment of the present invention.

[0043] Description of reference numerals:

[0044] Glass substrate 100: Glass plate layer 10, first metal layer 11, single glass plate layer 12, second metal layer 13, glass paste layer 20, via hole 40. Detailed implementation manners

[0045] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents the selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0047] It should be noted that: Similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0048] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present invention is usually placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be understood as indicating or implying relative importance.

[0049] In addition, the terms "horizontal", "vertical", etc. do not mean that the components are required to be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0050] In the description of the present invention, it should also be noted that unless otherwise clearly specified and defined, the terms "arranged", "installed", "connected", and "linked" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] The present application provides a rare earth silicate glass, which includes the following components by mass percentage: 77% ≤ silicon dioxide (SiO2) ≤ 80%, 16% ≤ boron oxide (BO) ≤ 20%, 1.5% ≤ potassium oxide (K2O) ≤ 2.7%, 1.3% ≤ aluminum oxide (Al2O3) ≤ 1.6%, and 0.05% < rare earth oxide ≤ 0.5%.

[0052] Among them, 99.5% ≤ silicon dioxide + boron oxide + potassium oxide + aluminum oxide ≤ 99.9%. That is, 99.5% ≤ mass percentage of (SiO2 + B2O3 + K2O + Al2O3) ≤ 99.9%

[0053] The rare earth oxide includes one or more of the oxides composed of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium.

[0054] Tested under the environment of 20°C and 1 MHz, the dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is less than 0.0006, and when the environmental temperature changes from 20°C ± 10°C, the dielectric constant of the rare earth silicate glass has no fluctuation. In addition, the rare earth silicate glass also has high thermal stability and high strength (specifically, see Table 1 below).

[0055] In one embodiment, the rare earth oxide in the rare earth silicate glass can be any of the following forms:

[0056] The rare earth oxide is a mixture of cerium oxide and samarium oxide;

[0057] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0058] The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide;

[0059] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide and dysprosium oxide;

[0060] The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide;

[0061] The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide;

[0062] The rare earth oxide is a mixture of dysprosium oxide and neodymium oxide;

[0063] The rare earth oxide is a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide; or,

[0064] The rare earth oxide is a mixture of cerium oxide, dysprosium oxide and neodymium oxide.

[0065] In one embodiment, in the raw materials of the rare earth silicate glass, the metal impurity concentrations in the silica, the boron oxide, the potassium oxide, the alumina and the rare earth oxide are all less than 10 ppm.

[0066] In this embodiment, the metal doping concentrations of various substances in the raw materials of the rare earth silicate glass are specifically limited to be less than a certain value, which can ensure the purity of the rare earth silicate glass products and improve the performance of the rare earth silicate glass.

[0067] This application also provides a method for preparing a rare earth silicate glass, including:

[0068] S1. Provide silica, boron oxide, potassium oxide, alumina and rare earth oxide, and mix them according to the mass percentage content described in any one of the above embodiments (multiple methods can be used) to form mixed particles. In this step, when mixing the above raw materials, the V - mixing method can be used, and V - mixing can achieve the uniform mixing of the above five raw materials (powder or particles). In addition, the raw materials (silica, boron oxide, potassium oxide, alumina and rare earth oxide) in S1 should not contain metal impurities or the content of metal impurities should be controlled. The specific control ratio is limited to that the metal impurity concentration in each raw material is less than 10 ppm.

[0069] S2. Put the mixed particles into a crucible for dissolution, where a high temperature of 1450 °C to 1600 °C is used during dissolution, and melting and homogenization are carried out for 32 to 48 hours, so that special chemical bonds are formed between the silica, the boron oxide, the potassium oxide, the alumina and the rare earth, thereby forming a pre - formed glass. The crucible used in this step can be a platinum crucible. In this step, high - temperature dissolution is used, and a suitable homogenization time should be coordinated during high - temperature dissolution to ensure the uniformity of the pre - formed glass.

[0070] S3. Place the preformed glass into a forming container and rapidly cool it within 2 minutes to form rare earth silicate glass. In this step, the rapid cooling can be carried out by air cooling or water cooling, that is, rapidly cool the preformed glass.

[0071] As Figure 1 shown, the rare earth silicate glass formed by the above preparation method of rare earth silicate glass has a coefficient of thermal expansion close to that of a single crystal silicon wafer, an expansion curve close to that of a single crystal silicon wafer, can avoid chip damage caused by differences in the coefficient of thermal expansion during use, extend the service life, and has a stable dielectric constant and dielectric loss. The rare earth silicate glass prepared by the above method is more conducive to chip architecture engineers to create higher density and higher performance chip packages, provides strong support for the production of data-intensive chips such as artificial intelligence, and is more suitable for application in high-power devices.

[0072] As shown in Table 1, the advantages of the rare earth silicate glass substrate provided in this application compared with the PCB substrate are: high thermal conductivity, small signal loss, stable dielectric constant, fast signal transmission, a 30% increase in chip layout with the same area of the substrate, a coefficient of thermal expansion close to that of the chip wafer, high reliability, large wiring density, the via density can be increased by 5 - 10 times, the warpage is reduced by 30 times, and the range of use environments is wider.

[0073] Table 1: Performance comparison between PCB substrate and glass substrate

[0074]

[0075] Seven examples (the rare earth silicate glass is formed by the preparation method of this application) and two comparative examples (the glass is formed by the preparation method of the prior art) are provided below.

[0076] Example 1:

[0077] S11. Provide raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide, and rare earth oxide, and provide the following components according to mass percentage: 77% of silicon dioxide, 19.3% of boron oxide, 2.3% of potassium oxide, 1.3% of aluminum oxide, and 0.1% of rare earth oxide for mixing to form mixed particles. Among them, the rare earth oxide includes a mixture of cerium oxide and samarium oxide.

[0078] S12. Put the mixed particles into a crucible for dissolution. During dissolution, use a high temperature of 1480°C ± 10°C and melt and homogenize for 36 hours so that special chemical bonds are formed among the silicon dioxide, boron oxide, potassium oxide, aluminum oxide, cerium oxide, and samarium oxide, thereby forming a preformed glass. Among them, the heating rate is rapidly increased at 50°C / min below 800°C, the heating rate is increased at 26°C / min from 800°C to 1300°C, the heating rate is increased at 8.5°C / min above 1300°C, and the control accuracy of the holding temperature is ±5°C.

[0079] S13. Put the preformed glass into a forming container and perform rapid cooling to form a rare earth silicate glass.

[0080] The rare earth silicate glass prepared in Example 1 is tested in an environment of 20°C and 1 MHz. The dielectric constant of the rare earth silicate glass is 4.1, and the dielectric loss is 0.0005 (less than 0.0006). Moreover, when the environmental temperature changes within 20°C ± 10°C, the dielectric constant of the rare earth silicate glass has no fluctuations. The thermal conductivity of the rare earth silicate glass is 1.02 ± 0.15; the expansion coefficient from T = 0 to 300°C is 3.3*10 -6 m / K; the high temperature resistance is > 150°C and can reach 280°C.

[0081] Example 2:

[0082] S21. Provide raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide, and rare earth oxides, and provide the following components according to mass percentage: 77% of silicon dioxide, 18.8% of boron oxide, 2.5% of potassium oxide, 1.6% of aluminum oxide, and 0.1% of rare earth oxides; mix them to form mixed particles. Among them, the rare earth oxides include a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide, and neodymium oxide.

[0083] S22. Put the mixed particles into a crucible for dissolution. During dissolution, use a high temperature of 1460°C ± 10°C and melt and homogenize for 40 hours so that special chemical bonds are formed among the silicon dioxide, boron oxide, potassium oxide, aluminum oxide, cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide, and neodymium oxide, thereby forming a preformed glass. Among them, the heating rate is rapidly increased at 50°C / min below 800°C, the heating rate is increased at 26°C / min from 800°C to 1300°C, the heating rate is increased at 8.5°C / min above 1300°C, and the control accuracy of the holding temperature is ±5°C.

[0084] S23. Put the preformed glass into a forming container and perform rapid cooling to form a rare earth silicate glass.

[0085] The rare earth silicate glass prepared in Example 2 was tested at 20 °C and 1 MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.0003, and when the environmental temperature changed within 20 °C ± 10 °C, the dielectric constant of the rare earth silicate glass showed no volatility. The thermal conductivity of the rare earth silicate glass was 1.1 ± 0.15; the coefficient of thermal expansion at T = 0 - 300 °C was 3.5*10 -6 m / K; it has high temperature resistance > 150 °C and can reach 260 °C.

[0086] Example 3:

[0087] S31, Provide raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, and provide the following components by mass percentage: 78% of silicon dioxide, 18% of boron oxide, 2.3% of potassium oxide, 1.4% of aluminum oxide, and 0.3% of rare earth oxides; Mix them to form mixed particles. Among them, the rare earth oxides include a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide.

[0088] S32, Put the mixed particles into a crucible for dissolution. During dissolution, a high temperature of 1580 °C ± 10 °C is used, and melting and homogenization are carried out for 32 hours to form special chemical bonds among the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the praseodymium oxide, the dysprosium oxide and the neodymium oxide, so as to form a preformed glass. Among them, the heating rate is rapidly increased at 50 °C / min below 800 °C, the heating rate is increased at 26 °C / min from 800 °C to 1300 °C, the heating rate is increased at 8.5 °C / min above 1300 °C, and the control accuracy of the holding temperature is ±5 °C.

[0089] S33, Put the preformed glass into a forming container and carry out rapid cooling to form a rare earth silicate glass.

[0090] The rare earth silicate glass prepared in Example 3 was tested at 20 °C and 1 MHz. The dielectric constant of the rare earth silicate glass was 4.1, the dielectric loss was 0.00007, and when the environmental temperature changed within 20 °C ± 10 °C, the dielectric constant of the rare earth silicate glass showed no volatility. The thermal conductivity of the rare earth silicate glass was 1.07 ± 0.15; the coefficient of thermal expansion at T = 0 - 300 °C was 4*10 -6 m / K; it has high temperature resistance > 150 °C and can reach 290 °C.

[0091] Example 4:

[0092] S41. Provide raw materials of silica, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, and provide the following components by mass percentage: 77.5% of silica, 18.5% of boron oxide, 2.1% of potassium oxide, 1.5% of aluminum oxide, and 0.4% of rare earth oxides; mix them to form mixed particles. Among them, the rare earth oxides include a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide.

[0093] S42. Put the mixed particles into a crucible for dissolution. During dissolution, use a high temperature of 1540 °C ± 10 °C and melt and homogenize for 36 hours, so that special chemical bonds are formed between the silica, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide, the samarium oxide, the dysprosium oxide and the neodymium oxide, thereby forming a preformed glass. Among them, the heating rate is rapidly increased at 50 °C / min below 800 °C, the heating rate is increased at 26 °C / min from 800 °C to 1300 °C, the heating rate is increased at 8.5 °C / min above 1300 °C, and the holding temperature control accuracy is ±5 °C.

[0094] S43. Put the preformed glass into a forming container and perform rapid cooling to form rare earth silicate glass.

[0095] The rare earth silicate glass prepared in Example 4 is tested in an environment of 20 °C and 1 MHz. The dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is 0.00002, and when the environmental temperature changes from 20 °C ± 10 °C, the dielectric constant of the rare earth silicate glass has no volatility. The thermal conductivity of the rare earth silicate glass is 1.08 ± 0.15; the expansion coefficient at T = 0 - 300 °C is 3.7*10 -6 m / K; high temperature resistance > 150 °C, up to 240 °C.

[0096] Example 5:

[0097] S51. Provide raw materials of silica, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, and provide the following components by mass percentage: 78.8% of silica, 17.8% of boron oxide, 1.8% of potassium oxide, 1.4% of aluminum oxide, and 0.2% of rare earth oxides; mix them to form mixed particles. Among them, the rare earth oxides include a mixture of cerium oxide, samarium oxide and praseodymium oxide.

[0098] S52. Put the mixed particles into a crucible for dissolution. During dissolution, use a high temperature of 1500°C ± 10°C and melt and homogenize for 36 hours so that special chemical bonds are formed between the silica, boron oxide, potassium oxide, alumina, cerium oxide, samarium oxide, and praseodymium oxide, thereby forming a preformed glass. Among them, the heating rate is rapidly increased at 50°C / min below 800°C, the heating rate is increased at 26°C / min from 800°C to 1300°C, the heating rate is increased at 8.5°C / min above 1300°C, and the control accuracy of the holding temperature is ±5°C.

[0099] S53. Put the preformed glass into a forming container and perform rapid cooling to form a rare earth silicate glass.

[0100] The rare earth silicate glass prepared in Example 5 is tested in an environment of 20°C and 1 MHz. The dielectric constant of the rare earth silicate glass is 4.1, and the dielectric loss is 0.00001. And when the environmental temperature changes from 20°C ± 10°C, the dielectric constant of the rare earth silicate glass has no fluctuation. The thermal conductivity of the rare earth silicate glass is 1.03 ± 0.15; the expansion coefficient when T = 0 - 300°C is 3.6*10 -6 m / K; it can withstand high temperatures above 150°C and can reach 250°C.

[0101] Example 6:

[0102] S61. Provide raw materials of silica, boron oxide, potassium oxide, alumina, and rare earth oxides, and provide the following components according to mass percentage: 79% of silica, 17.9% of boron oxide, 1.7% of potassium oxide, 1.3% of alumina, and 0.1% of rare earth oxides; mix them to form mixed particles. Among them, the rare earth oxides include dysprosium oxide and neodymium oxide.

[0103] S62. Put the mixed particles into a crucible for dissolution. During dissolution, use a high temperature of 1520°C ± 10°C and melt and homogenize for 36 hours so that special chemical bonds are formed between the silica, boron oxide, potassium oxide, alumina, dysprosium oxide, and neodymium oxide, thereby forming a preformed glass. Among them, the heating rate is rapidly increased at 50°C / min below 800°C, the heating rate is increased at 26°C / min from 800°C to 1300°C, the heating rate is increased at 8.5°C / min above 1300°C, and the control accuracy of the holding temperature is ±5°C.

[0104] S63. Put the preformed glass into a forming container and perform rapid cooling to form a rare earth silicate glass.

[0105] The rare earth silicate glass prepared in Example 6 was tested under the environment of 20 °C and 1 MHz. The dielectric constant of the rare earth silicate glass was 4.1, and the dielectric loss was 0.0001. Moreover, when the environmental temperature changed within 20 °C ± 10 °C, the dielectric constant of the rare earth silicate glass showed no volatility. The thermal conductivity of the rare earth silicate glass was 1.08 ± 0.15; the coefficient of thermal expansion at T = 0 - 300 °C was 3.8 * 10 -6 m / K; it has high temperature resistance > 150 °C and can reach 230 °C.

[0106] Example 7:

[0107] S71, Provide raw materials of silicon dioxide, boron oxide, potassium oxide, aluminum oxide, and rare earth oxides, and provide the following components according to mass percentage: 79.7% of silicon dioxide, 17% of boron oxide, 1.5% of potassium oxide, 1.6% of aluminum oxide, and 0.2% of rare earth oxides; Mix them to form mixed particles. Among them, the rare earth oxides include: cerium oxide, dysprosium oxide, and neodymium oxide.

[0108] S72, Put the mixed particles into a crucible for dissolution. During dissolution, a high temperature of 1480 °C ± 10 °C is used, and melting and homogenization are carried out for 37 hours, so that special chemical bonds are formed between the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide, the cerium oxide, the dysprosium oxide, and the neodymium oxide, thereby forming a preformed glass. Among them, the heating rate is rapidly increased at 50 °C / min below 800 °C, the heating rate is increased at 26 °C / min from 800 °C to 1300 °C, the heating rate is increased at 8.5 °C / min above 1300 °C, and the control accuracy of the holding temperature is ±5 °C.

[0109] S73, Put the preformed glass into a forming container and carry out rapid cooling to form a rare earth silicate glass.

[0110] The rare earth silicate glass prepared in Example 7 was tested under the environment of 20 °C and 1 MHz. The dielectric constant of the rare earth silicate glass was 4.1, and the dielectric loss was 0.0003. Moreover, when the environmental temperature changed within 20 °C ± 10 °C, the dielectric constant of the rare earth silicate glass showed no volatility. The thermal conductivity of the rare earth silicate glass was 1.16 ± 0.15; the coefficient of thermal expansion at T = 0 - 300 °C was 4 * 10 -6 m / K; it has high temperature resistance > 150 °C and can reach 210 °C.

[0111] Comparative Example 8:

[0112] S81. Provide raw materials of silica, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, and provide the following components by mass percentage: 77% of silica, 26.5% of boron oxide (not meeting 16% ≤ boron oxide ≤ 20%), 2.1% of potassium oxide, 1.3% of aluminum oxide, and 0.1% of rare earth oxides; mix them to form mixed particles. Among them, the rare earth oxides include cerium oxide and samarium oxide.

[0113] S82. Put the mixed particles into a crucible for dissolution. During dissolution, use a high temperature of 1460°C ± 10°C and melt and homogenize for 40 hours to form a preformed glass. Among them, the heating rate is rapidly increased at 50°C / min below 800°C, the heating rate is increased at 26°C / min from 800°C to 1300°C, the heating rate is increased at 8.5°C / min above 1300°C, and the holding temperature control accuracy is ±5°C.

[0114] S83. Put the preformed glass into a forming container and perform rapid cooling to form (the rare earth silicate glass in the prior art).

[0115] The rare earth silicate glass prepared in Comparative Example 8 is tested under the environment of 20°C and 1 MHz. The dielectric constant of the rare earth silicate glass is 4.3, and the dielectric loss is 0.01 (not less than 0.0006, see Table 1). And when the environmental temperature changes from 20°C ± 10°C, the dielectric constant of the rare earth silicate glass has no fluctuation. The thermal conductivity of the rare earth silicate glass is 1.09 ± 0.15; the expansion coefficient when T = 0 - 300°C is 18 * 10 -6 m / K (not within the range of 2 - 10); high temperature resistance > 100°C, and can reach 120°C (not within the range of 150°C - 300°C).

[0116] Comparative Example 9:

[0117] S91. Provide raw materials of silica, boron oxide, potassium oxide, aluminum oxide and rare earth oxides, and provide the following components by mass percentage: 83% of silica (not within the range of 77% ≤ silica ≤ 80%), 13.2% of boron oxide (not within the range of 16% ≤ boron oxide ≤ 20%), 1.7% of potassium oxide, 1.6% of aluminum oxide, and 0.5% of rare earth oxides; mix them to form mixed particles. Among them, the rare earth oxides include a mixture of cerium oxide, samarium oxide and praseodymium oxide.

[0118] S92. Put the mixed particles into a crucible for dissolution, where the dissolution is carried out at a high temperature of 1460 °C ± 10 °C and melted and homogenized for 40 hours to form a preformed glass. Among them, the heating rate is rapidly increased at 50 °C / min below 800 °C, the heating rate is increased at 26 °C / min from 800 °C to 1300 °C, the heating rate is increased at 8.5 °C / min above 1300 °C, and the temperature control accuracy of the holding temperature is ±5 °C.

[0119] S93. Put the preformed glass into a forming container and perform rapid cooling to form a rare earth silicate glass.

[0120] For the rare earth silicate glass prepared in Comparative Example 9, tested in an environment of 20 °C and 1 MHz, the dielectric constant of the rare earth silicate glass is 4.0, and the dielectric loss is 0.002 (not less than 0.0006, see Table 1). And when the environmental temperature changes within 20 °C ± 10 °C, the dielectric constant of the rare earth silicate glass has no volatility. The thermal conductivity of the rare earth silicate glass is 1.17 ± 0.15 (not within the range of 0.8 - 1.2, see Table 1); the expansion coefficient when T = 0 - 300 °C is 15 * 10 -6 m / K (not within the range of 2 - 10, see Table 1); the high temperature resistance is > 150 °C and can reach 180 °C.

[0121] The relevant performance parameters of the rare earth silicate glass prepared in the above 7 examples and 2 comparative examples are shown in Table 2 below. It is obvious that the performance of the rare earth silicate glass in Comparative Example 8 and Comparative Example 9 is not good, mainly reflected in high dielectric loss and low signal transmission speed. Further, please refer to Figure 2 , Figure 2 This is the dielectric loss test chart of the rare earth silicate glass provided in Examples 1 - 7 and Comparative Examples 8 - 9 of the present invention. Figure 2 It can be seen from [reference] that the dielectric losses of the rare earth silicate glasses provided in Examples 1 - 7 of the present invention are all less than 0.0001 at room temperature of 20 °C and 1 MHz. While the dielectric losses of the rare earth silicate glasses provided in Comparative Examples 8 - 9 are all greater than 0.0001, which are 0.01 and 0.002 respectively.

[0122] Table 2: Performance comparison table of rare earth silicate glass

[0123]

[0124] In addition, the rare earth silicate glass prepared by using the above preparation method of rare earth silicate glass (such as the rare earth silicate glass in Examples 1 to 7 above) has good performance: the density is 2.15 ± 0.25 g·cm -3, the Young's modulus is 70.00 GPa, the coefficient of thermal expansion is (3 ± 0.5)×10 -6 m / K in the temperature range of 0 - 300 °C, the logarithmic volume resistivity is 12.3 Ω·cm at 250 °C and 9.9 Ω·cm at 350 °C, the dielectric constant is 4.1 at room temperature of 20 °C and 1 MHz, the loss is less than 0.0001 at room temperature of 20 °C and 1 MHz, and the signal transmission speed is greater than 350 GB.

[0125] Using the preparation method of the rare earth silicate glass provided by this application, the made rare earth silicate glass substrate replaces the traditional PCB substrate, which is more conducive to chip architecture engineers to create higher density and higher performance chip packaging, providing strong support for the production of data-intensive chips such as artificial intelligence. In addition, the rare earth silicate glass substrate provided by this application has better performance in flatness, thermal stability and mechanical stability. Specifically, using the rare earth silicate glass substrate provided by this application can significantly improve electrical and mechanical properties; the adjustable modulus and coefficient of thermal expansion are closer to silicon, supporting large-sized chips; the substrate size fluctuates very little under the condition of a large temperature change range, with higher stability; it can increase the via density by about 5 - 10 times, improving routing and signals; reducing loss and increasing signal transmission speed; supporting advanced integrated power supply at higher temperatures.

[0126] Please refer to Figure 3 , this application also provides a glass substrate 100. The glass substrate may include one or more layers of rare earth silicate glass. When the glass substrate includes multiple layers of rare earth silicate glass, different layers of rare earth silicate glass can be bonded together by a special glass paste. In one embodiment, the glass substrate 100 includes multiple glass plate layers 10 and glass paste layers 20 that are alternately stacked from bottom to top in sequence, wherein the number of the glass plate layers 10 is equal to the number of the glass paste layers 20 plus one. The glass plate layer 10 includes: a first metal layer 11, a single glass plate layer 12, and a second metal layer 13 that are stacked in sequence; wherein, the materials of the first metal layer 11 and the second metal layer 13 are one or more of titanium, nickel, copper, or indium oxide, and the single glass plate layer 12 is the rare earth silicate glass in any of the above embodiments. The melting point of the glass paste layer 20 is lower than the melting point of the glass plate layer 10. In one embodiment, the melting point of the glass paste layer 20 is in the range of 300 °C to 500 °C, the glass paste layer 20 is insulating, the softening temperature of the glass paste layer 20 is lower than the softening temperature of the single glass plate layer 12, and the glass paste layer 20 plays a role in bonding the upper and lower layers.

[0127] As Figure 3As shown in the figure, the glass substrate 100 includes, from top to bottom in sequence: a first metal layer 11, a single glass plate layer 12, a second metal layer 13, a glass paste layer 20, a first metal layer 11, a single glass plate layer 12, a second metal layer 13, a glass paste layer 20, a first metal layer 11, a single glass plate layer 12, a second metal layer 13, a glass paste layer 20, a first metal layer 11, a single glass plate layer 12, a second metal layer 13, a glass paste layer 20, a first metal layer 11, a single glass plate layer 12, a second metal layer 13.

[0128] In this embodiment, the specific structure of a glass substrate 100 including 5 glass plate layers 10 and 4 glass paste layers 20 is illustrated. In this structure, the melting point of the adopted glass paste layer 20 is in the range of 300°C to 500°C, the glass paste layer 20 is insulating, the softening temperature of the glass paste layer 20 is lower than the softening temperature of the single glass plate layer 12, and the glass paste layer 20 functions to bond the upper and lower layers. Therefore, in this embodiment, the glass substrate 100 has a lower coefficient of thermal expansion, higher strength, better chemical stability and thermal stability, a very high bonding force exists between each layer, and the glass substrate 100 has good insulation and higher safety.

[0129] In one embodiment, the glass paste layer 20 includes a mixture of glass powder, an organic binder, and water, wherein the content of the glass powder and the organic binder reaches 70% - 85%. The glass powder is a micron-sized, low-melting-point glass powder for electronic paste.

[0130] The glass powder is made by the following steps:

[0131] S1. Take 10% - 30% by mass of boron trioxide, 5% - 15% of silicon dioxide, 55% - 70% of zinc oxide, 0% - 25% of vanadium pentoxide, 0% - 2% of antimony trioxide, and 0% - 2% of germanium dioxide, and mix them to obtain a mixture. In this step, the above raw materials are prepared according to the mass ratio of the above specific components, and the prepared above raw materials are added to a ball mill and mixed thoroughly. Before S1, there are also steps of pickling, strong magnetic adsorption to remove metal impurities, and ensuring that metal ions are less than 10 PPM.

[0132] S2. Heat and melt the mixture to obtain glass liquid. In this step, pour the mixture powder prepared in S1 into a crucible, place it in a high-temperature furnace under an air atmosphere, and heat it to a liquid state. The heating temperature is 1300°C - 1500°C, and keep it for 24 hours to 72 hours for homogenization: Under high temperature for a long time, the chemical composition of the glass liquid tends to be uniform to obtain the glass liquid. In a specific embodiment, pour the mixture powder prepared in S1 into a crucible, place it in a high-temperature furnace under an air atmosphere, and heat it to a liquid state. The heating temperature is 1450°C, and keep it for 36 hours. The glass liquid is continuously heated and releases a gaseous mixture. After 36 hours of homogenization, the chemical composition of the glass liquid tends to be uniform.

[0133] S3. Quench the glass liquid with water to obtain a glass body. In this step, pour the molten glass body formed in S2 into water for rapid cooling to obtain glass slag.

[0134] S4. Crush the glass body to obtain the glass powder. Crush and grind the glass slag formed in S4 to obtain the glass powder. The dielectric constant of the glass powder obtained in this step is about 4, the expansion coefficient is close to that of silicon, and the loss is less than 0.0001 (@20°C, 1MHz).

[0135] S5. Mix the glass powder, organic binder, and water in a certain proportion to obtain glass paste. The content of the glass powder and the organic binder reaches 70% - 85%.

[0136] The glass paste layer 20 is a glass paste including glass powder, organic binder, and water. Specifically, the mixing ratio of the glass powder and water can be adjusted according to the material and thickness of the glass layer to be bonded.

[0137] In this embodiment, the glass paste layer 20 is a glass paste including glass powder, organic binder, and water. The glass powder is prepared by a high-temperature melting - water quenching process. The glass paste layer 20 prepared from this glass powder has a low melting point, a low glass transition point, high uniformity, low raw material prices, rich sources, a relatively low synthesis temperature, and a simple process, which is conducive to industrial production.

[0138] In this embodiment, the glass paste layer 20 has a lower thermal expansion coefficient, higher strength, better chemical stability and thermal stability, has a high bonding force with both borosilicate glass and glass-ceramics, and the glass paste layer 20 has good insulation and higher safety.

[0139] In one embodiment, the glass substrate 100 includes a plurality of vias 40, and the maximum penetration depth of the plurality of vias 40 is equal to the sum of the thicknesses of the glass plate layer 10 and the glass paste layer 20. The diameter of the via 40 is 0.03 mm - 0.07 mm, and the distance between any two adjacent vias 40 is greater than or equal to 0.04 mm.

[0140] In this embodiment, the penetration depths of the vias 40 in the same layer are the same, and the penetration depths in different layers are the same or different. The plurality of vias 40 are used to form a circuit board with a special circuit layout. In this embodiment, the distance between any two adjacent vias 40 is greater than or equal to 0.04 mm. In one embodiment, the diameter of the via 40 is 0.05 mm. In one embodiment, the distance between any two adjacent vias 40 is 0.05 mm.

[0141] In this embodiment, the diameter and spacing of the provided vias 40 make the circuit layout formed by the glass substrate 100 more stable.

[0142] The glass substrate involved in this application has a very wide range of applications. The glass substrate described in any of the above can be applied to a variety of different semiconductor chip packaging structures, replacing the existing PCB circuit board, so that the chip integration degree is greatly improved, the number of chips placed per unit area is greatly increased, and the transmission rate between chips is increased to more than 300 G. For example, the glass substrate can be applied to artificial intelligence computing power chips, photonic chips, high-power solid-state laser chips, 6G transmission chips, and high-power radar chips.

[0143] The main difference between the glass substrate and the traditional organic PCB substrate is that both glass and silicon are made of silicon. Therefore, they have similar degrees of deformation due to heat, and are harder and less prone to deformation than organic encapsulation. As a result, it is easier to allow more wires to pass through the rare-earth silicate glass; it is easier to perform the process at a higher processing temperature; it is easier to construct finer-pitch wiring, and can support a circuit board with a maximum size of 200mm×200mm. In addition, the signal transmission speed of the glass substrate made of the rare-earth silicate glass involved in this application can be as high as 400GB, and the dielectric constant can be achieved to be lower than that of the organic encapsulation. The glass substrate made of the rare-earth silicate glass involved in this application can package a series of Chiplets together through internal interconnection technology. Additionally, the superior mechanical, physical, and optical properties of the glass substrate made of the rare-earth silicate glass involved in this application allow more transistors to be connected within one package. While improving power delivery, the signal transmission speed will also be faster. This also enables chip architects to package more Chiplets in one package, while achieving improvements in performance, density, flexibility, as well as reduction in cost and power consumption. The glass substrate technology made of the rare-earth silicate glass involved in this application can increase the chip area in a single package by 30% - 50%, thereby allowing more Chiplets to be placed. The glass substrate made of the rare-earth silicate glass provided in the embodiments of this application has low high-frequency dielectric loss, and the loss can be less than 0.006 under the condition of 100G, and it can be used under high-temperature conditions above 150°C.

[0144] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A rare earth silicate glass, characterized in that: According to the percentage by mass, it includes the following components: 77%≤silicon dioxide≤80%, 16%≤boron oxide≤20%, 1.5%≤potassium oxide≤2.7%, 1.3%≤aluminum oxide≤1.6%, and 0.05%<rare earth oxide≤0.5%; Among them, 99.5%≤silicon dioxide+boric oxide+potassium oxide+aluminum oxide≤99.9%; The rare earth oxide includes one or more of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide; When tested under an environment of 20° C. and 1 MHz, the dielectric constant of the rare earth silicate glass is 4.1, and the dielectric loss is less than 0.0006. Furthermore, when the environment changes at 20° C.±10° C., the dielectric constant of the rare earth silicate glass does not fluctuate.

2. The rare earth silicate glass according to claim 1, characterized in that: The rare earth oxide is a mixture of cerium oxide and samarium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide and praseodymium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide and dysprosium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide; The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide; The rare earth oxide is a mixture of dysprosium oxide and neodymium oxide; The rare earth oxide is a mixture of cerium oxide, samarium oxide, dysprosium oxide and neodymium oxide; or, The rare earth oxide is a mixture of cerium oxide, dysprosium oxide and neodymium oxide.

3. The rare earth silicate glass according to claim 1, characterized in that: The concentration of metal impurities in the silicon dioxide, the boron oxide, the potassium oxide, the aluminum oxide and the rare earth oxide is less than 100 ppm.

4. A method for preparing rare earth silicate glass, characterized in that: include: S1, providing silicon dioxide, boron oxide, potassium oxide, aluminum oxide and rare earth oxide, and mixing them according to the mass percentage content of any one of claims 1 to 3 to form mixed particles; S2, placing the mixed particles into a crucible for dissolution, wherein the high temperature of 1450° C. to 1600° C. is used for the dissolution, and the melting and homogenization are carried out for 32 to 48 hours, and the glass liquid is injected into distilled water at room temperature within 2 minutes for cooling to form a preformed glass, and then the glass is crushed into a preformed glass powder of 1 to 3 microns; S3, placing the preformed glass powder into a forming container and heating it to form rare earth silicate glass; The rare earth silicate glass formed by the above preparation method is tested under an environment of 20°C and 1MHz. The dielectric constant of the rare earth silicate glass is 4.1, the dielectric loss is less than 0.0006, and the dielectric constant of the rare earth silicate glass does not fluctuate when the environment changes at 20°C±10°C.

5. The method for preparing rare earth silicate glass according to claim 4, characterized in that: The rare earth oxide is a mixture of cerium oxide, samarium oxide, praseodymium oxide, dysprosium oxide and neodymium oxide; In S2, when the mixed particles are placed in a crucible for dissolution, the temperature is raised to 1460°C±10°C at a heating rate of 50°C / min, and maintained at 1460°C±10°C for 40 hours, so that chemical bonds are formed between the rare earth oxide and the silicon dioxide, the boron oxide, the potassium oxide, and the aluminum oxide.

6. The method for preparing rare earth silicate glass according to claim 4, characterized in that: The rare earth oxide is a mixture of praseodymium oxide, dysprosium oxide and neodymium oxide; In S2, when the mixed particles are placed in a crucible for dissolution, the temperature is raised to 1580°C±10°C at a heating rate of 100°C / min, and maintained at 1580°C±10°C for 32 hours; chemical bonds are formed between the rare earth oxide and the silicon dioxide, the boron oxide, the potassium oxide, and the aluminum oxide.

7. A glass substrate, characterized in that: A plurality of glass plate layers (10) and glass paste layers (20) alternately stacked in sequence from bottom to top, wherein the number of the glass plate layers (10) is equal to the number of the glass paste layers (20) plus one; The glass plate layer (10) comprises: a first metal layer (11), a glass plate single layer (12) and a second metal layer (13) which are stacked in sequence; wherein the material of the first metal layer (11) and the second metal layer (13) is one or more of titanium, nickel, copper, or indium oxide, and the glass plate single layer (12) is the rare earth silicate glass according to any one of claims 1 to 6.

8. The glass substrate according to claim 7, wherein: The glass substrate (100) comprises a plurality of via holes (40), wherein the maximum penetration depth of the plurality of via holes (40) is equal to the sum of the thicknesses of the glass plate layer (10) and the glass paste layer (20); The diameter of the conducting hole (40) is 0.03 mm-0.07 mm, and the distance between any two adjacent conducting holes (40) is greater than or equal to 0.04 mm.

9. An application of a glass substrate, characterized in that: The glass substrate as described in claim 7 or 8 is applied to the packaging structure of artificial intelligence computing chips, photonic chips, high-power solid laser chips, 6G transmission chips, and high-power radar chips.

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