AuGe12 alloy metal evaporation method for wafer

Abstract

The invention relates to the technical field of evaporation, in particular to an AuGe12 alloy metal evaporation method for a wafer, which comprises the following steps: cleaning a pre-prepared bushing at high temperature, and adding a first mass of AuGe12 alloy material into the bushing; the AuGe12 alloy material is subjected to primary pre-melting; adding an AuGe12 alloy material with a second mass into the lining so as to enable the AuGe12 alloy material in the lining to reach a target mass; the AuGe12 alloy material is subjected to secondary pre-melting; an AuGe12 alloy material is added into the lining, so that the AuGe12 alloy material in the lining recovers to the target mass; and the AuGe12 alloy material is subjected to three times of pre-melting, then evaporation is started, the evaporation rate is 0.1 / s-0. 3 / s, and evaporation is conducted till the preset thickness is reached. According to the invention, the generation of particles on the surface of the wafer is effectively reduced, and the yield of finished products is improved.

Description

Technical Field

[0001] The present invention relates to the field of evaporation technology, and in particular to a AuGe12 alloy metal evaporation method for a wafer. Background Art

[0002] The compound semiconductor HBT and pHEMT processes usually use three metal layers of AuGe12 / Ni / Au on the wafer as the metal electrode of the transistor collector. However, a large number of particles will be generated during the evaporation of AuGe12 alloy metal. These particles will have a certain impact on the product yield, such as short circuit, leakage, etc., and have an adverse effect on the appearance. Therefore, a method is needed to reduce the AuGe12 alloy metal evaporation particles. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a AuGe12 alloy metal evaporation method for wafers.

[0004] The present invention adopts the following technical solution: a method for evaporating AuGe12 alloy metal for wafers, the method comprising: Step 1: high temperature cleaning the prepared bushing, and adding a first mass of AuGe12 alloy material into the bushing; Step 2: placing the bushing on the graphite gasket in the crucible of the evaporation machine, evacuating the evaporation machine to a first preset vacuum degree, pre-melting the AuGe12 alloy material using the electron gun in the evaporation machine, and taking out the bushing after the evaporation machine cools down to room temperature; Step 3, adding a second mass of the AuGe12 alloy material into the bushing, so that the AuGe12 alloy material in the bushing reaches a target mass, wherein the mass of the AuGe12 alloy material when it occupies 4 / 5 of the volume of the bushing is the target mass; Step 4: placing the bushing on the graphite gasket in the crucible of the evaporation machine, evacuating the evaporation machine to a second preset vacuum degree, performing a second pre-melting of the AuGe12 alloy material using the electron gun, and taking out the bushing after the evaporation machine is cooled to room temperature; Step 5: Adding the AuGe12 alloy material into the bushing to restore the AuGe12 alloy material in the bushing to the target mass; Step 6: Place the wafer to be evaporated in the evaporator, and place the bushing on the graphite gasket in the crucible of the evaporator, evacuate the evaporator to a third preset vacuum degree, pre-melt the AuGe12 alloy material three times according to the electron gun, and then start evaporation at a rate of 0.1Å / s to 0.3Å / s until the evaporation reaches a preset thickness, and wait for the evaporator to cool to room temperature before taking out the bushing and the wafer; Step seven: Repeat steps five to six to recycle the AuGe12 alloy material in the bushing to complete the AuGe12 alloy metal evaporation on multiple batches of wafers.

[0005] An embodiment of the present invention is a method for evaporating AuGe12 alloy metal for wafers. The bushing is pre-cleaned to remove contamination caused by the bushing protective oil film. AuGe12 alloy material is added into the bushing in batches and the AuGe12 alloy material is removed by primary pre-melting and secondary pre-melting. Carbon impurities in the AuGe12 alloy material and particles on the surface are effectively evaporated to improve the purity of the AuGe12 alloy material in the bushing. Due to the evaporation of carbon impurities, the AuGe12 alloy material in the bushing after the secondary pre-melting will be lower than the target quality. Therefore, the material needs to be spread again before evaporation and pre-melted three times so that the liquid AuGe12 alloy material in the bushing occupies 4 / 5 of the volume of the bushing. This state can ensure the best evaporation effect of the AuGe12 alloy material. A specific evaporation rate is used during evaporation to achieve a better proportion of AuGe12 alloy material evaporation without affecting the electrical properties. This effectively reduces the generation of particles on the wafer surface and improves the yield of the finished product.

[0006] Furthermore, the step of high temperature cleaning the prepared bushing specifically includes: Place the prepared bushing on the graphite gasket in the crucible of the evaporator and set the vacuum degree to 1x10 -6 Torr~5ⅹ10 -6 Torr; The power of the electron gun is adjusted to 80W, 160W, 240W, 320W and 400W in turn, and the bushing is heated continuously for 10min-15min at 80W, continuously for 10min-15min at 160W, continuously for 1min-2min at 240W, continuously for 1min-2min at 320W, and heated until the entire bushing turns red at 400W, maintained for 1min, the electron gun is turned off, and the bushing is taken out after cooling to room temperature.

[0007] Furthermore, the first mass is half of the target mass.

[0008] Furthermore, the first preset vacuum degree is 5×10 -7 Torr~1ⅹ10 -6 Torr.

[0009] Furthermore, the step of initially pre-melting the AuGe12 alloy material according to the electron gun in the evaporator specifically includes: The power of the electron gun is adjusted to 350W-450W to heat the AuGe12 alloy material for 10-15 minutes; The power of the electron gun is adjusted to 750W-850W to heat the AuGe12 alloy material for 5-10 minutes; The power of the electron gun is adjusted to 1100W-1300W to heat the AuGe12 alloy material for 3min-8min.

[0010] Furthermore, the second preset vacuum degree is 5×10 -7 Torr~1ⅹ10 -6 Torr.

[0011] Furthermore, the step of performing secondary pre-melting of the AuGe12 alloy material according to the electron gun specifically includes: The power of the electron gun is adjusted to 350W-450W to heat the AuGe12 alloy material for 10-15 minutes; The power of the electron gun is adjusted to 750W-850W to heat the AuGe12 alloy material for 5-10 minutes; The power of the electron gun is adjusted to 1200W-1400W to heat the AuGe12 alloy material for 3min-8min.

[0012] Furthermore, the third preset vacuum degree is 1×10 -7 Torr~5ⅹ10 -7 Torr.

[0013] Furthermore, the steps of pre-melting the AuGe12 alloy material three times according to the electron gun specifically include: The power of the electron gun is adjusted to 600W-800W to heat the AuGe12 alloy material for 3min-4min; The power of the electron gun is adjusted to 1000W-1200W to heat the AuGe12 alloy material for 2min-3min; The power of the electron gun is adjusted to 1400W-1600W to heat the AuGe12 alloy material for 1min-2min.

[0014] Furthermore, before the step of placing the wafer to be evaporated in the evaporation machine, a preset shielding plate is used to shield the crucible, and the shielding plate is removed after the three pre-meltings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0016] Figure 1 It is a flow chart of the AuGe12 alloy metal evaporation method for wafers of the present invention; Figure 2 This is a schematic diagram of detecting a wafer after vapor deposition using a particle detection device according to the second embodiment of the present invention. DETAILED DESCRIPTION

[0017] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the embodiments of the present invention, and should not be construed as limiting the present invention.

[0018] In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0019] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0020] In the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0021] Embodiment 1 Reference Figure 1 The first embodiment of the present invention is a method for evaporating AuGe12 alloy metal for a wafer, the method comprising: S1. High-temperature cleaning is performed on the prepared bushing, and a first mass of AuGe12 alloy material is added into the bushing; wherein the AuGe12 alloy is an alloy with an Au content of 88% and a Ge content of 12%; Furthermore, the step of high temperature cleaning the prepared bushing specifically includes: Place the prepared bushing on the graphite gasket in the crucible of the evaporator and set the vacuum degree to 1x10 -6 Torr~5ⅹ10 -6 Torr; In this embodiment, the vacuum degree when the bushing is cleaned at high temperature is 5ⅹ10 -6 Torr; The power of the electron gun is adjusted to 80W, 160W, 240W, 320W and 400W in turn, and the bushing is heated continuously for 10min-15min at 80W, for 10min-15min at 160W, for 1min-2min at 240W, for 1min-2min at 320W, and until the entire bushing turns red at 400W, and maintained for 1min. The electron gun is turned off, and the bushing is taken out after cooling to room temperature. In this embodiment, the bushing is heated continuously for 15min at 80W, for 12min at 160W, for 2min at 240W, and for 1min at 320W.

[0022] Furthermore, the first mass is half of the target mass.

[0023] S2, placing the bushing on the graphite gasket in the crucible of the evaporation machine, evacuating the evaporation machine to a first preset vacuum degree, pre-melting the AuGe12 alloy material for the first time according to the electron gun in the evaporation machine, and taking out the bushing after the evaporation machine cools down to room temperature; Furthermore, the first preset vacuum degree is 5 x 10 -6Torr~1ⅹ10 -6 Torr; In this embodiment, the first preset vacuum degree is 1 x 10 -6 Torr.

[0024] Furthermore, the steps of pre-melting the AuGe12 alloy material for the first time according to the electron gun in the evaporation machine specifically include: Adjust the power of the electron gun to 350W-450W to heat the AuGe12 alloy material for 10-15 minutes; adjust the power of the electron gun to 750W-850W to heat the AuGe12 alloy material for 5-10 minutes; adjust the power of the electron gun to 1100W-1300W to heat the AuGe12 alloy material for 3-8 minutes; turn off the electron gun, cool to room temperature and then take out the bushing.

[0025] In this embodiment, the steps of the initial pre-melting specifically include: adjusting the power of the electron gun to 400W to heat the AuGe12 alloy material for 12 minutes; adjusting the power of the electron gun to 800W to heat the AuGe12 alloy material for 8 minutes; adjusting the power of the electron gun to 1200W to heat the AuGe12 alloy material for 5 minutes; turning off the electron gun, cooling to room temperature and then removing the sleeve.

[0026] S3. Add a second mass of AuGe12 alloy material into the bushing to make the AuGe12 alloy material in the bushing reach a target mass, wherein the mass when the AuGe12 alloy material occupies 4 / 5 of the volume of the bushing is the target mass.

[0027] S4, placing the bushing on the graphite gasket in the crucible of the evaporation machine, evacuating the evaporation machine to a second preset vacuum degree, performing a second pre-melting of the AuGe12 alloy material using an electron gun, and taking out the bushing after the evaporation machine is cooled to room temperature; Furthermore, the second preset vacuum degree is 5 x 10 -7 Torr~1ⅹ10 -6 Torr; In this embodiment, the second preset vacuum degree is 1x10 -6 Torr.

[0028] Furthermore, the steps of performing secondary pre-melting of the AuGe12 alloy material using an electron gun specifically include: Adjust the power of the electron gun to 350W-450W to heat the AuGe12 alloy material for 10-15 minutes; adjust the power of the electron gun to 750W-850W to heat the AuGe12 alloy material for 5-10 minutes; adjust the power of the electron gun to 1200W-1400W to heat the AuGe12 alloy material for 3-8 minutes; turn off the electron gun, cool to room temperature and then remove the bushing.

[0029] In this embodiment, the steps of secondary pre-melting specifically include: adjusting the power of the electron gun to 450W to heat the AuGe12 alloy material for 10 minutes; adjusting the power of the electron gun to 850W to heat the AuGe12 alloy material for 5 minutes; adjusting the power of the electron gun to 1400W to heat the AuGe12 alloy material for 3 minutes; turning off the electron gun, cooling to room temperature and then removing the sleeve.

[0030] S5. Add AuGe12 alloy material into the bushing to restore the AuGe12 alloy material in the bushing to the target quality.

[0031] S6. Place the wafer to be evaporated in the evaporator, and place the bushing on the graphite gasket in the crucible of the evaporator. Evacuate the evaporator to a third preset vacuum degree, pre-melt the AuGe12 alloy material three times using an electron gun, and then start evaporation at a rate of 0.1Å / s to 0.3Å / s until the evaporation reaches a preset thickness. Wait for the evaporator to cool to room temperature before taking out the bushing and the wafer. In this embodiment, the evaporation rate is 0.3Å / s.

[0032] Furthermore, the third preset vacuum degree is 1×10 -7 Torr~5ⅹ10 -7 Torr; In this embodiment, the third preset vacuum degree is 5 x 10 -7 Torr.

[0033] Furthermore, the steps of pre-melting the AuGe12 alloy material three times according to the electron gun specifically include: adjusting the power of the electron gun to 600W~800W to heat the AuGe12 alloy material for 3min~4min; adjusting the power of the electron gun to 1000W~1200W to heat the AuGe12 alloy material for 2min~3min; adjusting the power of the electron gun to 1400W~1600W to heat the AuGe12 alloy material for 1min~2min.

[0034] In this embodiment, the three pre-melting steps specifically include: adjusting the power of the electron gun to 800W to heat the AuGe12 alloy material for 3 minutes; adjusting the power of the electron gun to 1200W to heat the AuGe12 alloy material for 2 minutes; adjusting the power of the electron gun to 1600W to heat the AuGe12 alloy material for 1 minute.

[0035] Furthermore, before placing the wafer to be evaporated in the evaporator, a preset shielding plate is used to shield the crucible, and the shielding plate is removed after three pre-meltings; the shielding plate can cover the crucible and prevent the material from being evaporated onto the wafer. When the three pre-meltings are completed and the evaporation begins, the shielding plate will be removed, and the material at this time will be evaporated onto the wafer.

[0036] S7. Repeat S5 to S6 to recycle the AuGe12 alloy material in the bushing and complete the AuGe12 alloy metal evaporation for multiple batches of wafers.

[0037] An embodiment of the present invention is a method for evaporating AuGe12 alloy metal for wafers. The bushing is pre-cleaned to remove contamination caused by the bushing protective oil film. AuGe12 alloy material is added into the bushing in batches and the AuGe12 alloy material is removed by primary pre-melting and secondary pre-melting. Carbon impurities in the AuGe12 alloy material and particles on the surface are effectively evaporated to improve the purity of the AuGe12 alloy material in the bushing. Due to the evaporation of carbon impurities, the AuGe12 alloy material in the bushing after the secondary pre-melting will be lower than the target quality. Therefore, the material needs to be spread again before evaporation and pre-melted three times so that the liquid AuGe12 alloy material in the bushing occupies 4 / 5 of the volume of the bushing. This state can ensure the best evaporation effect of the AuGe12 alloy material. A lower evaporation rate is used during evaporation to achieve a better proportion of AuGe12 alloy material evaporation without affecting the electrical properties. This effectively reduces the generation of particles on the wafer surface and improves the yield of the finished product.

[0038] Embodiment 2 Prepare a bushing, a graphite gasket, and an AuGe12 alloy material, wherein the bushing has a capacity of 25cc and may be a tungsten bushing, a tungsten-lanthanum alloy bushing, or a molybdenum bushing, and the AuGe12 alloy material may be particles with a diameter of 5 mm to 6 mm, or in a sheet structure; The protective film and other impurities on the bushing are removed by heating with an electron gun to volatilize them. Operation method: Place the new bushing on the graphite gasket in the crucible of the evaporation machine and set the vacuum degree to 5x10. -6Torr, after the evaporator reaches the preset vacuum degree, heat it at 80W for 10 minutes; heat it at 160W for 10 minutes; heat it at 240W for 1 minute, heat it at 320W for 1 minute, and heat it at 400W for 1 minute. When the entire bushing turns red as can be seen through the observation window, keep it for 1 minute and then turn off the electron gun. Cool it to room temperature for 20 minutes, then break the vacuum, open the door and take out the bushing.

[0039] Add 50g of AuGe12 alloy material to the bushing, place the bushing on the graphite gasket in the crucible of the evaporator, and set the vacuum degree to 1x10 -6 Torr, after the evaporator reaches the preset vacuum degree, the initial pre-melting is carried out, heating is carried out at 350W for 15 minutes, at 750W for 10 minutes, and at 1100W for 8 minutes; after turning off the electron gun, the liner is cooled to room temperature, the liner is taken out, and the liner is weighed, and the AuGe12 alloy material in the liner is 45g; Then add 55g of AuGe12 alloy material into the bushing to make the total weight of the AuGe12 alloy material in the bushing 100g; place the bushing on the graphite gasket in the crucible of the evaporation machine and set the vacuum degree to 1x10 -6 Torr, after the evaporator reaches the preset vacuum degree, perform secondary pre-melting, use 350W power to heat for 15 minutes, use 750W power to heat for 10 minutes, and use 1200W power to heat for 8 minutes; turn off the electron gun and cool to room temperature, and take out the bushing; use low power to heat for a slightly longer time to make the carbon impurities in the material float on the surface of the bushing, and then use slightly higher power to heat to evaporate the carbon impurities.

[0040] The bushing was weighed and the AuGe12 alloy material in the bushing was found to be 95 g; 5 g of AuGe12 alloy material was added to the bushing to restore the AuGe12 alloy material in the bushing to 100 g; the bushing after the addition of AuGe12 alloy material was placed on the graphite gasket in the crucible of the evaporator, and the vacuum degree was set to 5 x 10 -7 Torr, after the evaporation machine reaches the preset vacuum degree, three pre-meltings are performed, and the power of the electron gun is set at 800W for continuous heating for 3 minutes, 1200W for continuous heating for 2 minutes, and 1600W for continuous heating for 1 minute; the evaporation rate is set to 0.3Å / s, and the evaporation thickness is set to 700Å~800Å, wherein the evaporation thickness is set according to needs; in this way, the particles of the AuGe12 alloy metal film evaporated are greatly reduced.

[0041] During the three pre-meltings, a shielding plate blocks the crucible and prevents the material from being evaporated onto the wafer. When the three pre-meltings are completed and the evaporation begins, the shielding plate will be removed and the material will be evaporated onto the wafer. Each time the AuGe12 alloy metal film is evaporated with a thickness of 700Å~800Å, about 4g of AuGe12 alloy material is consumed. About 4g of the consumed AuGe12 alloy material is replenished each time before evaporation. The power and time set for the three pre-meltings can remove the carbon impurities brought in by each replenishment of the AuGe12 alloy material before evaporation. The evaporation rate can also be 0.1Å / s or 0.2Å / s. When the evaporation rate is higher, point-like germanium will be deposited in and on the surface of the AuGe12 alloy evaporated film, causing an increase in particles. For details, refer to Figure 2 , using particle detection equipment or defect detection equipment to detect, it can be found that the number of particles has increased significantly.

[0042] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0043] Under the premise that no conflict occurs, those skilled in the art may freely combine and superimpose the above-mentioned additional technical features.

[0044] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for evaporating AuGe12 alloy metal for wafers, characterized in that: The method comprises: Step 1: high temperature cleaning the prepared bushing, and adding a first mass of AuGe12 alloy material into the bushing; Step 2: placing the bushing on the graphite gasket in the crucible of the evaporation machine, evacuating the evaporation machine to a first preset vacuum degree, pre-melting the AuGe12 alloy material using the electron gun in the evaporation machine, and taking out the bushing after the evaporation machine cools down to room temperature; Step 3, adding a second mass of the AuGe12 alloy material into the bushing, so that the AuGe12 alloy material in the bushing reaches a target mass, wherein the mass of the AuGe12 alloy material when it occupies 4 / 5 of the volume of the bushing is the target mass; Step 4: placing the bushing on the graphite gasket in the crucible of the evaporation machine, evacuating the evaporation machine to a second preset vacuum degree, performing a second pre-melting of the AuGe12 alloy material using the electron gun, and taking out the bushing after the evaporation machine is cooled to room temperature; Step 5: Adding the AuGe12 alloy material into the bushing to restore the AuGe12 alloy material in the bushing to the target mass; Step 6: Place the wafer to be evaporated in the evaporator, and place the bushing on the graphite gasket in the crucible of the evaporator, evacuate the evaporator to a third preset vacuum degree, pre-melt the AuGe12 alloy material three times according to the electron gun, and then start evaporation at a rate of 0.1Å / s to 0.3Å / s until the evaporation reaches a preset thickness, and wait for the evaporator to cool to room temperature before taking out the bushing and the wafer; Step seven: Repeat steps five to six to recycle the AuGe12 alloy material in the bushing and complete the AuGe12 alloy metal evaporation on multiple batches of wafers.

2. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The steps for high temperature cleaning of the prepared bushing include: Place the prepared bushing on the graphite gasket in the crucible of the evaporator and set the vacuum degree to 1x10 -6 Torr~5ⅹ10 - 6 Torr; The power of the electron gun is adjusted to 80W, 160W, 240W, 320W and 400W in turn, and the bushing is heated continuously for 10min-15min at 80W, continuously for 10min-15min at 160W, continuously for 1min-2min at 240W, continuously for 1min-2min at 320W, and heated until the entire bushing turns red at 400W, maintained for 1min, the electron gun is turned off, and the bushing is taken out after cooling to room temperature.

3. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The first mass is half of the target mass.

4. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The first preset vacuum degree is 5×10 -7 Torr~1ⅹ10 -6 Torr.

5. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The step of pre-melting the AuGe12 alloy material for the first time according to the electron gun in the evaporator specifically includes: The power of the electron gun is adjusted to 350W-450W to heat the AuGe12 alloy material for 10-15 minutes; The power of the electron gun is adjusted to 750W-850W to heat the AuGe12 alloy material for 5-10 minutes; The power of the electron gun is adjusted to 1100W-1300W to heat the AuGe12 alloy material for 3min-8min.

6. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The second preset vacuum degree is 5×10 -7 Torr~1ⅹ10 -6 Torr.

7. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The step of performing secondary pre-melting of the AuGe12 alloy material according to the electron gun specifically includes: The power of the electron gun is adjusted to 350W-450W to heat the AuGe12 alloy material for 10-15 minutes; The power of the electron gun is adjusted to 750W-850W to heat the AuGe12 alloy material for 5-10 minutes; The power of the electron gun is adjusted to 1200W-1400W to heat the AuGe12 alloy material for 3min-8min.

8. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The third preset vacuum degree is 1×10 -7 Torr~5ⅹ10 -7 Torr.

9. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: The steps of pre-melting the AuGe12 alloy material three times according to the electron gun specifically include: The power of the electron gun is adjusted to 600W-800W to heat the AuGe12 alloy material for 3min-4min; The power of the electron gun is adjusted to 1000W-1200W to heat the AuGe12 alloy material for 2min-3min; The power of the electron gun is adjusted to 1400W-1600W to heat the AuGe12 alloy material for 1min-2min.

10. The AuGe12 alloy metal evaporation method for wafers according to claim 1, characterized in that: Before the step of placing the wafer to be evaporated in the evaporation machine, the crucible is shielded by a preset shielding plate, and the shielding plate is removed after the three pre-meltings.

Images