Selective sunlight absorption / dynamic heat radiation regulator for temperature difference thermoelectric generator and manufacturing method thereof

Abstract

The invention relates to the technical field of energy utilization, in particular to a selective sunlight absorption / dynamic heat radiation regulator for a temperature difference thermoelectric generator and a manufacturing method of the selective sunlight absorption / dynamic heat radiation regulator. The modulator comprises an antireflection layer, a short wave absorption metal ceramic layer, a metal layer, a visible near-infrared absorption metal ceramic layer, a phase change layer and a substrate layer, the short wave absorption metal ceramic layer, the metal layer, the visible near-infrared absorption metal ceramic layer and the phase change layer form a nano cavity, and the layers are sequentially arranged in an overlapped mode. The modulator can realize excellent selective absorption and radiation refrigeration dynamic spectral response in the whole spectrum range of 250-25000nm.

Description

Technical Field

[0001] The present invention relates to the technical field of energy utilization, and more specifically, to a selective solar light absorption / dynamic thermal radiation controller for a temperature difference thermoelectric generator and a manufacturing method thereof. Background Art

[0002] As a natural clean energy, solar energy has abundant reserves. With the development of solar energy technology, the application of solar energy technology in human production and life applications has been continuously expanded. Nowadays, providing sustainable all-weather energy supply by using solar energy alone still faces major challenges, especially for the operation of equipment at night in remote rural areas and offshore areas (such as underwater vehicles, diving robots, sensors and detectors, etc.). Solar radiation has the characteristics of temporal and spatial discontinuity, while outer space (~3K), which can be used as a cold source, can transfer thermal radiation with objects on the earth all day long. Therefore, by rationally designing the spectral response of the surface of the object and selectively capturing / radiating heat between the solar heat source / outer space cold source, the energy conversion rate can be maximized, and at the same time, the defect of not being able to use solar energy at night can be compensated.

[0003] Selective absorption and radiative cooling technologies are two diametrically opposed energy capture strategies. Most existing technologies can only operate on one of the energy capture strategies, or require manual control to switch, making it difficult to achieve automatic adjustment of the energy capture strategy and unable to achieve adaptive effects, resulting in low energy utilization. Summary of the invention

[0004] The purpose of the present invention is to overcome the defect that the existing regulator cannot adaptively adjust the energy capture strategy, and to provide a selective solar light absorption / dynamic thermal radiation regulator for a temperature difference thermoelectric generator and a manufacturing method thereof, which utilizes a temperature adaptive film and a nanocavity structure to perform dynamic spectrum control design to achieve selective solar spectrum absorption and radiation cooling effects, and can also achieve dynamic selective absorption and radiation cooling spectrum response switching, thereby achieving all-weather continuous electrical output.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0006] Provided is a selective solar light absorption / dynamic thermal radiation regulator for a thermoelectric generator, which includes the following structures from top to bottom: an anti-reflection layer, a short-wave absorption metal ceramic layer, a metal layer, a visible near-infrared absorption metal ceramic layer, a phase change layer, and a substrate layer, wherein the short-wave absorption metal ceramic layer, the metal layer, the visible near-infrared absorption metal ceramic layer, and the phase change layer constitute a nanocavity, and the substrate layer is a ceramic mid-infrared emission layer made of an alumina ceramic substrate, and the above layers are overlapped in sequence. The regulator can achieve excellent selective absorption and radiative cooling dynamic spectral response in the entire spectrum range of 250-25000nm, that is, during the day, it has more than 90% selective light absorption in the full spectrum (250-25000nm) range band; at night, the thermoelectric generator has more than 80% thermal radiation characteristics in the infrared region (2500-25000nm) band. The present invention utilizes the different spectral emissivity of the nanocavity in the 0.3-25 μm band to achieve excellent selective absorption and radiative cooling dynamic spectral response. In the high temperature state, the absorptivity of the nanocavity in the solar radiation band (0.3-3 μm) is 0.965, and the emissivity in the infrared band (3-25 μm) is 0.303. In the low temperature state, the emissivity of the nanocavity structure in the infrared band (3-25 μm) is 0.806, and the absorptivity in the solar radiation band (0.3-3 μm) is 0.972.

[0007] Furthermore, the short-wave absorption metal ceramic layer and the visible near-infrared absorption metal ceramic layer are composite metal ceramic layers containing metal materials and metal ceramic materials, wherein the metal material includes tungsten, nickel, molybdenum, aluminum, titanium or a composite layer thereof; the metal ceramic material includes silicon dioxide, titanium dioxide, silicon nitride, aluminum oxide or a composite layer thereof. By using a variety of metal materials and metal ceramic materials, the spectral response of the absorption layer can be optimized and its absorption efficiency in a specific band can be improved. This diversity also allows the material properties, such as corrosion resistance, mechanical strength and thermal stability, to be adjusted according to specific applications.

[0008] Furthermore, the composite metal ceramic layer is tungsten-silicon dioxide (W-SiO2). The tungsten-silicon dioxide composite layer provides excellent optical and thermal properties. The high absorptivity of tungsten and the high reflectivity of silicon dioxide are combined to improve the solar energy absorption rate and thermal radiation efficiency.

[0009] Furthermore, the metal layer is tungsten, nickel, molybdenum, aluminum, titanium or a composite layer thereof, and metals with different properties, such as high conductivity, high reflectivity or high absorptivity, can be selected as needed to optimize the overall performance.

[0010] Furthermore, the phase change layer is tungsten-doped vanadium dioxide (W x V 1-xO2), where x represents the doping atomic ratio of tungsten element. The tungsten-doped vanadium dioxide phase change layer can change its optical properties when the temperature changes, thereby dynamically adjusting the spectral response and improving the adaptability and efficiency of the thermoelectric generator.

[0011] Furthermore, the anti-reflection layer is silicon dioxide or aluminum oxide. Both silicon dioxide and aluminum oxide are commonly used anti-reflection materials to reduce the reflection loss of incident light and improve the absorption rate of solar energy.

[0012] Furthermore, the thicknesses of the anti-reflection layer, the short-wave absorption metal ceramic layer, the metal layer, the visible near-infrared absorption metal ceramic layer and the phase change layer are 100±20nm, 100±20nm, 10±5nm, 40±10nm and 150±60nm respectively.

[0013] The present invention also provides a method for manufacturing a selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator, which is used to manufacture the controller. The method comprises the following steps:

[0014] Step S1, starting sputtering deposition at room temperature and in an environment with an oxygen-argon ratio of 1:10, and after the deposition is completed, annealing is performed in a vacuum environment at a temperature of 400-500° C. to form a phase change layer with phase change ability;

[0015] Step S2, depositing a short-wave absorption metal ceramic layer, a metal layer, and a visible near-infrared absorption metal ceramic layer on the phase change layer material obtained in step S1, and forming a nanocavity structure together with the phase change layer to prepare a temperature-adaptive selective absorption radiation body;

[0016] Step S3, respectively arranging an anti-reflection layer and a substrate layer on both sides of the temperature-adaptive selective radiation absorbing body obtained in step S2.

[0017] The manufacturing method forms a phase change layer with phase change ability through sputtering deposition and annealing treatment, and constructs a nanocavity structure through deposition technology. This method can produce a selective solar light absorption / dynamic thermal radiation regulator for high-performance temperature difference thermoelectric generators.

[0018] Preferably, in step S1, the sputtering pressure is 0.3-0.7Pa.

[0019] Preferably, in step S1, the sputtering power density is 7.4±3 W / cm 2 .

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. The present invention provides a selective solar light absorption / dynamic thermal radiation regulator for a thermoelectric generator, which utilizes the different spectral emissivity of the nanocavity in the 0.3-25 μm band to achieve excellent selective absorption and radiative cooling dynamic spectral response, and can achieve excellent selective absorption and radiative cooling dynamic spectral response in the entire spectrum range of 250-25000 nm. During the day, the selective light absorption in the full solar spectrum (250-4000 nm) has more than 90%; at night, the thermoelectric generator has more than 80% thermal radiation characteristics in the infrared region (2500-25000 nm);

[0022] 2. The regulator is combined with the thermoelectric module to form a temperature difference thermoelectric generator, which can realize all-weather energy capture from multiple thermodynamic sources, and can achieve 1.0mW / cm during the day and night respectively. 2 and 2.0μW / cm 2 Output power density;

[0023] 3. The present invention provides a method for manufacturing a selective solar light absorption / dynamic thermal radiation regulator for a temperature difference thermoelectric generator. The sputtering deposition is started at room temperature and in an environment with an oxygen-argon ratio of 1:10. After the deposition is completed, it is annealed in a vacuum environment at a temperature of 400-500°C to form a phase change layer with phase change ability. A short-wave absorption metal ceramic layer, a metal layer, and a visible near-infrared absorption metal ceramic layer are deposited on the phase change layer material to form a nanocavity structure together with the phase change layer to prepare a temperature-adaptive selective absorption radiator. The dynamic spectral response of the absorption radiator has excellent omnidirectional spectral characteristics. Within a wide incident angle range of 0-65°, the absorption rate of the absorption radiator to sunlight remains above 90%. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic structural diagram of a selective solar light absorption / dynamic thermal radiation controller for a temperature difference thermoelectric generator of the present invention;

[0025] Figure 2 Schematic diagram of dynamic spectral response for selective absorption and radiative cooling;

[0026] Figure 3 It is a reference diagram of the reflection spectrum of Example 1 at a high temperature of 70°C and a low temperature of 20°C;

[0027] Figure 4 It is a reference diagram of the reflection spectrum of Example 2 at a high temperature of 70°C and a low temperature of 20°C;

[0028] Figure 5 It is a reference diagram of the reflection spectrum of Example 3 at a high temperature of 70°C and a low temperature of 20°C;

[0029] Figure 6A flow chart of a method for manufacturing a selective solar light absorption / dynamic thermal radiation regulator for a thermoelectric generator.

[0030] In the attached figure:

[0031] 1- Anti-reflection layer,

[0032] 2- Short-wave absorption metal ceramic layer,

[0033] 3-Metal layer,

[0034] 4- Visible and near infrared absorbing metal ceramic layer,

[0035] 5- Phase change layer,

[0036] 6-Substrate layer. DETAILED DESCRIPTION

[0037] The present invention is further described below in conjunction with specific implementation methods. The drawings are only used for exemplary description and cannot be understood as limiting the present invention. In order to better illustrate the present embodiment, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0038] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "front", "rear", "left", "right" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, it is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as limitations on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0039] Example 1

[0040] See also Figure 1 and Figure 2 The present embodiment provides a selective solar light absorption / dynamic thermal radiation regulator for a temperature difference thermoelectric generator, comprising an anti-reflection layer 1, a short-wave absorption metal ceramic layer 2, a metal layer 3, a visible near-infrared absorption metal ceramic layer 4, a phase change layer 5 and a substrate layer 6 arranged in sequence from top to bottom, wherein the short-wave absorption metal ceramic layer 2, the metal layer 3, the visible near-infrared absorption metal ceramic layer 4, and the phase change layer 5 constitute a nanocavity, and the substrate layer 6 is a ceramic mid-infrared emission layer made of an alumina ceramic substrate.

[0041] In this embodiment, the anti-reflection layer 1 is aluminum oxide (Al2O3) with a thickness of 80nm; the short-wave absorption metal ceramic layer 2 is a composite metal ceramic layer with a thickness of 70nm, specifically, tungsten-silicon dioxide (W-SiO2); the metal layer 3 is a metal tungsten (W) layer with a thickness of 10nm; the visible near-infrared absorption metal ceramic layer 4 is a composite metal ceramic layer with a thickness of 40nm, specifically, tungsten-silicon dioxide (W-SiO2); the phase change layer 5 is tungsten-doped vanadium dioxide (W) with a thickness of 90nm. x V 1-x O2), where x represents the doping atomic ratio of tungsten element. The tungsten-doped vanadium dioxide phase change layer can change its optical properties when the temperature changes, thereby realizing dynamic adjustment of spectral response and improving the adaptability and efficiency of the thermoelectric generator.

[0042] The spectral emission (absorption) rate of the 0.3-25 μm band of this embodiment at different temperatures is as follows: Figure 3 As shown. In the high temperature state, the absorptivity of this embodiment in the solar radiation band (0.3-3μm) is 0.965, and the emissivity in the infrared band (3-25μm) is 0.299; in the low temperature state, the emissivity of the temperature-adaptive nanocavity structure in the infrared band (3-25μm) is 0.800, and the absorptivity in the solar radiation band (0.3-3μm) is 0.952. This embodiment can achieve excellent selective absorption and radiative cooling dynamic spectral response in the full spectrum (250-25000nm) band range. During the day, this embodiment has more than 96% selective light absorption in the full solar spectrum (250-4000nm) band range; at night, this embodiment has 80% thermal radiation characteristics in the infrared region (2500-25000nm) band range.

[0043] Example 2

[0044] See also Figure 1 A selective solar light absorption / dynamic thermal radiation regulator for a temperature difference thermoelectric generator comprises an anti-reflection layer 1, a short-wave absorption metal ceramic layer 2, a metal layer 3, a visible near-infrared absorption metal ceramic layer 4, a phase change layer 5 and a substrate layer 6 which are arranged in sequence from top to bottom. The difference between this embodiment and the first embodiment is that in this embodiment, the anti-reflection layer 1 is a silicon dioxide (SiO2) with a thickness of 90nm; the short-wave absorption metal ceramic layer 2 is a composite metal ceramic layer with a thickness of 80nm, specifically, tungsten-silicon dioxide (W-SiO2); the metal layer 3 is a metal nickel (Ni) layer with a thickness of 20nm; the visible near-infrared absorption metal ceramic layer 4 is a composite metal ceramic layer with a thickness of 50nm, specifically, tungsten-silicon dioxide (W-SiO2); the phase change layer 5 is a tungsten-doped vanadium dioxide (W-VDO) with a thickness of 90nm. x V 1-x O2), where x represents the doping atomic ratio of tungsten element.

[0045] The spectral emission (absorption) rate of the 0.3-25 μm band of this embodiment at different temperatures is as follows: Figure 4 As shown. In the high temperature state, the absorptivity of this embodiment in the solar radiation band (0.3-4μm) is 0.965, and the emissivity in the infrared band (3-25μm) is 0.303; in the low temperature state, the emissivity of the temperature-adaptive nanocavity structure in the infrared band (3-25μm) is 0.806, and the absorptivity in the solar radiation band (0.3-3μm) is 0.972. This embodiment can achieve excellent selective absorption and radiative cooling dynamic spectral response in the full spectrum (250-25000nm) band range. During the day, this embodiment has more than 95% selective light absorption in the full solar spectrum (250-4000nm) band range; at night, this embodiment has more than 80% thermal radiation characteristics in the infrared region (2500-25000nm) band range.

[0046] Example 3

[0047] See also Figure 1 A selective solar light absorption / dynamic thermal radiation regulator for a temperature difference thermoelectric generator comprises an anti-reflection layer 1, a short-wave absorption metal ceramic layer 2, a metal layer 3, a visible near-infrared absorption metal ceramic layer 4, a phase change layer 5 and a substrate layer 6 which are arranged in sequence from top to bottom. The difference between this embodiment and the first embodiment is that in this embodiment, the anti-reflection layer 1 is a silicon dioxide (SiO2) with a thickness of 100 nm; the short-wave absorption metal ceramic layer 2 is a composite metal ceramic layer with a thickness of 100 nm, specifically, tungsten-silicon dioxide (W-SiO2); the metal layer 3 is a metal tungsten (W) layer with a thickness of 10 nm; the visible near-infrared absorption metal ceramic layer 4 is a composite metal ceramic layer with a thickness of 40 nm, specifically, tungsten-silicon dioxide (W-SiO2); the phase change layer 5 is a tungsten-doped vanadium dioxide (W) layer with a thickness of 180 nm. x V 1-x O2), where x represents the doping atomic ratio of tungsten element.

[0048] The spectral emission (absorption) rate of the 0.3-25 μm band of this embodiment at different temperatures is as follows: Figure 5As shown. In the high temperature state, the absorptivity of this embodiment in the solar radiation band (0.3-3μm) is 0.950, and the emissivity in the infrared band (3-25μm) is 0.308; in the low temperature state, the emissivity of the temperature-adaptive nanocavity structure in the infrared band (3-25μm) is 0.856, and the absorptivity in the solar radiation band (0.3-3μm) is 0.965. This embodiment can achieve excellent selective absorption and radiative cooling dynamic spectral response in the full spectrum (250-25000nm) band range. During the day, this embodiment has 95% selective light absorption in the full solar spectrum (250-4000nm) band range; at night, this embodiment has more than 80% thermal radiation characteristics in the infrared region (2500-25000nm) band range.

[0049] Of course, in some other embodiments, the short-wave absorption metal ceramic layer 2 and the visible near-infrared absorption metal ceramic layer 4 may also include other metal materials and other metal ceramic materials, and are not limited to tungsten-silicon dioxide (W-SiO2) in this embodiment. The metal material may be any one of tungsten, nickel, molybdenum, aluminum, titanium, or a composite layer thereof; the metal ceramic material may be any one of silicon dioxide, titanium dioxide, silicon nitride, aluminum oxide, or a composite layer thereof.

[0050] In some other embodiments, the metal layer 3 may also be any one of nickel, molybdenum, aluminum, titanium or a composite layer thereof.

[0051] In some other embodiments, the thickness of the anti-reflection layer 1 may also be any value among 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, or any value within the range of 80-120 nm.

[0052] In some other embodiments, the thickness of the short-wave absorbing metal ceramic layer 2 may also be any value among 80 nm, 90 nm, 100 nm, 110 nm, 120 nm or any value within the range of 80-120 nm.

[0053] In some other embodiments, the thickness of the metal layer 3 may also be any value among 5 nm, 7.5 nm, 10 nm, 12.5 nm, 15 nm, or any value within the range of 5-15 nm.

[0054] In some other embodiments, the thickness of the visible-near-infrared absorption metal ceramic layer 4 may also be any value among 30 nm, 35 nm, 40 nm, 45 nm, 50 nm or any value within the range of 30-50 nm.

[0055] In some other embodiments, the thickness of the phase change layer 5 may also be any value among 90 nm, 120 nm, 150 nm, 180 nm, 210 nm or any value within the range of 90-210 nm.

[0056] Example 4

[0057] See also Figure 6 A method for manufacturing a selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator, which is used to manufacture the controller described in any of the above embodiments, and the method comprises the following steps:

[0058] Step S1, starting sputtering deposition at room temperature and in an environment with an oxygen-argon ratio of 1:10, and after the deposition is completed, annealing is performed in a vacuum environment at a temperature of 400-500° C. to form a phase change layer 5 with phase change capability;

[0059] Step S2, depositing a short-wave absorption metal ceramic layer 2, a metal layer 3, and a visible near-infrared absorption metal ceramic layer 4 on the phase change layer 5 material prepared in step S1, and forming a nanocavity structure together with the phase change layer 5 to prepare a temperature-adaptive selective absorption radiation body;

[0060] Step S3, respectively disposing an anti-reflection layer 1 and a substrate layer 6 on both sides of the temperature-adaptive selective radiation absorption body obtained in step S2.

[0061] The sputtering pressure is 0.3 Pa. Of course, in some other embodiments, the sputtering pressure may also be any value among 0.4 Pa, 0.5 Pa, 0.6 Pa, 0.7 Pa or any value within the range of 0.3-0.7 Pa.

[0062] Among them, the sputtering power density is 7.4W / cm 2 Of course, in some other embodiments, the sputtering power density can also be 4.4 W / cm 2 , 5.4W / cm 2 、6.4W / cm 2 、8.4W / cm 2 、9.4W / cm 2 、10.4W / cm 2 Any value or 4.4-10.4W / cm 2 Any value in the range.

[0063] The regulator prepared by the method is combined with a thermoelectric module to realize all-weather energy capture from multiple thermodynamic sources, achieving 1.0 mW / cm during the day and 1.0 mW / cm at night. 2 and 2.0μW / cm 2The output power density can realize the integrated function of heating and heat preservation, which is innovative and practical. In addition, the dynamic spectrum response of the absorbing radiation body has excellent omnidirectional spectrum characteristics. In the wide incident angle range of 0-65°, the absorption rate of the absorbing radiation body to sunlight still remains above 90%.

[0064] In the specific contents of the above-mentioned specific implementation methods, the various technical features can be combined in any non-contradictory manner. In order to make the description concise, not all possible combinations of the above-mentioned technical features are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0065] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator, characterized in that: From top to bottom, they include: Anti-reflection layer (1), Short-wave absorbing metal ceramic layer (2), Metal layer (3), a visible near infrared absorbing metal ceramic layer (4), Phase change layer (5) and a substrate layer (6), The short-wave absorption metal ceramic layer (2), the metal layer (3), the visible near-infrared absorption metal ceramic layer (4) and the phase change layer (5) constitute a nanocavity structure, and the substrate layer (6) is an alumina ceramic substrate; During the day, the thermoelectric generator has a selective light absorption of more than 90% in the 250-25000nm band using a selective sunlight absorption / dynamic thermal radiation regulator; At night, the thermoelectric generator has a thermal radiation characteristic of more than 80% in the 2500-25000nm band using a selective solar light absorption / dynamic thermal radiation regulator.

2. The selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator according to claim 1, characterized in that: The short-wave absorption metal ceramic layer (2) and the visible near-infrared absorption metal ceramic layer (4) are composite metal ceramic layers comprising metal materials and metal ceramic materials, wherein the metal materials include tungsten, nickel, molybdenum, aluminum, titanium or a composite layer thereof; and the metal ceramic materials include silicon dioxide, titanium dioxide, silicon nitride, aluminum oxide or a composite layer thereof.

3. The selective solar light absorption / dynamic thermal radiation controller for the thermoelectric generator according to claim 2, characterized in that: The composite metal ceramic layer is tungsten-silicon dioxide.

4. The selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator according to claim 1, characterized in that: The metal layer (3) is tungsten, nickel, molybdenum, aluminum, titanium or a composite layer thereof.

5. The selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator according to claim 1, characterized in that: The phase change layer (5) is tungsten-doped vanadium dioxide.

6. The selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator according to claim 1, characterized in that: The anti-reflection layer (1) is silicon dioxide or aluminum oxide.

7. The selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator according to claim 1, characterized in that: The thicknesses of the anti-reflection layer (1), the short-wave absorption metal ceramic layer (2), the metal layer (3), the visible near-infrared absorption metal ceramic layer (4) and the phase change layer (5) are 100±20nm, 100±20nm, 10±5nm, 40±10nm and 150±60nm respectively.

8. A method for manufacturing a selective solar light absorption / dynamic thermal radiation controller for a thermoelectric generator according to any one of claims 1 to 7, characterized in that: The following steps are involved: Step S1, starting sputtering deposition at room temperature and in an environment with an oxygen-argon ratio of 1:10, and after the deposition is completed, annealing is performed in a vacuum environment at a temperature of 400-500° C. to form a phase change layer (5) with phase change capability; Step S2, depositing a short-wave absorption metal ceramic layer (2), a metal layer (3), and a visible near-infrared absorption metal ceramic layer (4) on the phase change layer (5) material obtained in step S1, and forming a nanocavity structure together with the phase change layer (5) to prepare a temperature-adaptive selective absorption radiation body; Step S3, respectively arranging an anti-reflection layer (1) and a substrate layer (6) on both sides of the temperature-adaptive selective radiation absorbing body obtained in step S2.

9. The manufacturing method according to claim 8, characterized in that: In step S1, the sputtering pressure is 0.3-0.7Pa.

10. The manufacturing method according to claim 8, characterized in that: In step S1, the sputtering power density is 7.4±3W / cm 2 .

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