Processing apparatus
By designing the support table and discharge components in the workpiece processing device to form a closed space, and using the air supply port to introduce the ambient gas in the gas adjustment treatment space, the problem of long adjustment time of the ambient gas around the workpiece in the prior art is solved, and productivity is improved and reduced. cost and environmental burden.
Patent Information
- Application Number
- CN202410392651.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-06-28
- Filing Date
- 2024-04-02
- Publication Date
- 2024-12-31
AI Technical Summary
When the existing workpiece processing device adjusts the ambient gas around the workpiece, there is a problem of low productivity, especially when processing workpieces with larger thicknesses, it takes a long time, which leads to an increase in the volume of the processing chamber and affects production efficiency.
By designing the support table and discharge components in the processing device to form a closed space, the gas is introduced into the gas to adjust the ambient gas in the processing space, and the substantial separation between the processing space and the non-processing space is achieved, thereby adjusting the ambient gas around the workpiece in advance, improving the ambient gas in the process part and productivity.
Early adjustment of the ambient gas around the workpiece is achieved, improving the productivity of the treatment device, reducing the amount of gas required, and reducing the processing cost and environmental burden.
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Figure CN119230371A_ABST
Abstract
Description
Technical Field
[0001] The present invention particularly relates to a processing device that performs a cleaning process on a processing object (workpiece) in a predetermined gas environment. Background Art
[0002] Conventionally, as a technique for cleaning and surface treating a workpiece, there is known a technique of irradiating the workpiece with ultraviolet light or blowing a plasma-containing gas (hereinafter referred to as "plasma-containing gas") onto the workpiece (see Patent Documents 1 and 2 below).
[0003] Patent Document 1: Japanese Patent Application Publication No. 2003-144913
[0004] Patent Document 2: Japanese Patent Application Publication No. 2002-320845
[0005] Patent document 1 describes a processing device (also referred to as a "light processing device") that irradiates a workpiece with vacuum ultraviolet light having a wavelength of less than 200 nm. Here, vacuum ultraviolet light is absorbed by oxygen, so when the oxygen concentration in the processing chamber where the workpiece is located is high, it may not be possible to irradiate the workpiece with the ultraviolet light of the required irradiation light amount for processing, and the desired processing cannot be performed. In view of this situation, in the above-mentioned light processing device, an inert gas such as nitrogen is introduced into the processing chamber to keep the oxygen concentration around the workpiece within a specified range.
[0006] Here, the thickness of the workpiece to be processed varies. When the thickness of the workpiece is different, the distance between the light source emitting ultraviolet light and the workpiece changes. Therefore, in order to adjust the irradiation conditions of the ultraviolet light on the workpiece, the light processing device is configured to move the workpiece in the direction opposite to the light source.
[0007] In particular, for thicker workpieces, the separation distance between the support platform for placing the workpiece and the light source needs to be increased. In view of this, the processing chamber of the optical processing device has a sufficient length in the direction in which the workpiece and the light source are opposite. As a result, the volume of the processing chamber becomes larger.
[0008] When the volume of the processing chamber is large, even if a workpiece with a small thickness is processed, the time required to replace the surrounding area of the workpiece with an inert gas or the like becomes longer. Therefore, conventional processing apparatuses have a problem of low productivity.
[0009] Patent Document 2 describes a plasma processing apparatus that generates plasma by applying a high voltage between electrodes and blows a plasma-containing gas toward the workpiece to process the workpiece. The same problems as those described above are pointed out in this plasma processing apparatus.
[0010] That is, in a plasma processing device, in order to perform a desired plasma processing on a workpiece, the separation distance between the workpiece and the electrode generating plasma is adjusted according to the thickness of the workpiece. In addition, in order to adjust the processing conditions of the workpiece, a predetermined process gas is introduced to adjust the ambient air around the workpiece. Here, when the volume of the processing chamber is increased in order to adjust the position of the workpiece, it takes a long time to adjust the ambient air around the workpiece by introducing the process gas. As a result, the productivity of the plasma processing device is reduced. Summary of the invention
[0011] In view of the above problems, an object of the present invention is to provide a processing device that can adjust the atmosphere around the workpiece at an early stage and has a high productivity.
[0012] The processing device of the present invention is characterized by comprising:
[0013] A support table for placing workpieces;
[0014] A first unit for storing the support platform;
[0015] A second unit is disposed adjacent to the first unit and contains a discharge portion formed of a discharge lamp or a plasma generating device; and
[0016] A gas supply port for introducing gas into the first unit,
[0017] A closed space is formed by the first unit and the second unit.
[0018] The second unit supplies ultraviolet light or plasma-containing gas generated by the discharge portion toward the support table.
[0019] The support table is configured to be able to move the workpiece in a first direction in which the first unit and the second unit are adjacent to each other, and to substantially separate the internal space of the first unit in the first direction.
[0020] According to the above configuration, the internal space of the first unit (processing chamber) where the workpiece is located is substantially separated into a space where the workpiece is located (hereinafter referred to as the "processing space") and a space on the opposite side of the processing space across the workpiece (hereinafter referred to as the "non-processing space"). Here, "substantially separated" means that when viewed along the first direction, the area of the path connecting the processing space and the non-processing space is less than 10% relative to the area of the processing space.
[0021] In the above configuration, the processing space and the processed space are substantially separated, so as long as the specified gas can be introduced from the gas supply port to adjust the atmosphere of the processing space, the atmosphere around the workpiece can be adjusted. That is, in order to adjust the atmosphere around the workpiece, it is not necessary to adjust the atmosphere of the entire processing chamber. As a result, the atmosphere around the workpiece can be adjusted early, and as a result, the productivity of the processing device is improved.
[0022] In addition, according to the above configuration, the amount of gas required to adjust the atmosphere around the workpiece is reduced, that is, the cost and environmental burden required for processing the above-mentioned workpiece are also reduced.
[0023] In the above processing device, it is also possible that:
[0024] The support platform has:
[0025] a first member supporting the workpiece; and
[0026] The second component substantially separates the inner space of the first unit in the first direction.
[0027] More simply, from the viewpoint of substantially separating the internal space of the first unit, it is preferable to provide the support table with a second component that is different from the first component. Depending on the processing required for the workpiece, for example, the workpiece is sometimes heated or cooled during the processing of the workpiece. In this case, since the first component is provided with a heater, a flow path for cooling water to flow, etc., the structure of the first component tends to become complicated. In contrast, according to the above structure, the internal space of the first unit can be substantially separated simply without significantly changing the design of the first component.
[0028] Furthermore, the second member may be in contact with a main surface of the first member on the opposite side to the second unit.
[0029] According to the above structure, when the first component moves in order to move the workpiece, the second component also moves together with the first component. That is, the size of the processing space that requires the adjustment of the atmosphere is adjusted according to the thickness of the workpiece, so the above structure is more excellent. In addition, from the same point of view, the second component can also abut against the side of the first component.
[0030] In the above processing apparatus, the support table may include a third member capable of supporting the second member and moving the second member and the first member in the first direction.
[0031] Furthermore, the first unit may have an exhaust port for exhausting the atmosphere in the first unit to the outside at a portion of the first unit on the opposite side to the second unit in the first direction with respect to the second member.
[0032] During the workpiece processing, it is preferred to stabilize the ambient air around the workpiece in the processing space. According to the above configuration, the gas introduced from the gas supply port into the first unit passes through the processing space and is exhausted from the non-processing space. Here, the processing space and the non-processing space are substantially separated, so it is difficult for the gas to move from the non-processing space side to the processing space side. Therefore, the ambient air in the processing space is easily stabilized, and the above configuration is excellent.
[0033] The second member may be configured to be extendable and retractable in a direction parallel to a main surface of the first member.
[0034] Here, the "main surface" refers to a surface whose area is much larger than other surfaces in the surface of the plate-shaped object. From the viewpoint of adjusting the oxygen concentration of the processing space with high precision, the path connecting the processing space with the non-processing space is preferably smaller. However, when the path is small, when the second component moves in the first direction to adjust the position of the workpiece, the hidden danger of the second component colliding with the wall of the first unit due to vibration, etc. becomes larger. In contrast, according to the above-mentioned structure, after the position of the first component is adjusted, the second component is extended in a direction parallel to the main surface of the first component, thereby making it possible to reduce the path connecting the processing space with the non-processing space.
[0035] The discharge section is composed of a discharge lamp and has a light extraction window for extracting ultraviolet light generated by the discharge lamp toward the first unit.
[0036] The first unit and the second unit may be spatially separated.
[0037] In addition, the discharge section is composed of a plasma generating device.
[0038] The first unit and the second unit may also be connected in space.
[0039] Effects of the Invention
[0040] According to the present invention, it is possible to provide a processing apparatus which can adjust the atmosphere around a workpiece at an early stage and has high productivity. BRIEF DESCRIPTION OF THE DRAWINGS
[0041] Figure 1 It is a drawing schematically showing the structure of one embodiment of the processing device of the present invention.
[0042] Figure 2 This is a top view of the first unit as viewed from the +Z direction.
[0043] Figure 3 It is a graph showing the verification result.
[0044] Figure 4 is with Figure 1 Similarly, the drawings show modifications of the processing device 1 .
[0045] Figure 5 It is a diagram showing another modified example of the processing device.
[0046] Figure 6 It is a figure which shows still another modification of a processing device.
[0047] Figure 7 It is a figure which shows another structural example of a support platform.
[0048] Figure 8 It is a figure which shows still another structural example of a support platform.
[0049] Fig. 9 This is a diagram showing another configuration example of the first unit.
[0050] Explanation of symbols
[0051] 1: Processing device
[0052] 2: Artifacts
[0053] 3: Unit 1
[0054] 4: Unit 2
[0055] 5: Support platform
[0056] 6: Discharge unit
[0057] 9: Air supply port
[0058] 10: Exhaust port
[0059] 11: First Part
[0060] 12: Second part
[0061] 13: The third component
[0062] 15: Discharge lamp
[0063] 16: Light extraction window
[0064] 17: Light extraction surface
[0065] 18: Electrode
[0066] 20: Path
[0067] 21: Telescopic part
[0068] 24: Lower hood
[0069] 25: Upper hood
[0070] 30: Handle
[0071] 31: Hinge
[0072] 32: Gas storage unit
[0073] G1~G4: Gas
[0074] L1: Ultraviolet light
[0075] S11: Processing Space
[0076] S12: Non-processing space DETAILED DESCRIPTION
[0077] An embodiment of the processing device of the present invention will be described with appropriate reference to the accompanying drawings. In addition, the following drawings are schematically illustrated, and the actual size ratio is not necessarily consistent with the size ratio on the drawings. In addition, the size ratio is not necessarily consistent between the drawings.
[0078] Figure 1 FIG. 2 is a diagram schematically showing the structure of an embodiment of a processing device of the present invention. Figure 1 As shown, the processing device 1 includes a first unit 3 for storing a workpiece 2 to be processed, and a second unit 4 .
[0079] In the following drawings, description is made with reference to an XYZ coordinate system in which the direction in which the first unit 3 and the second unit 4 are adjacent is defined as the Z direction and the plane perpendicular to the Z direction is defined as the XY plane. The Z direction corresponds to the "first direction" and is typically the vertical direction.
[0080] In the following description, when a direction is expressed with a distinction between positive and negative directions, it is recorded as "+X direction" or "-X direction" with a positive and negative sign added. In addition, when a direction is expressed without distinguishing between positive and negative directions, it is simply recorded as "X direction". That is, in this specification, when it is simply recorded as "X direction", both "+X direction" and "-X direction" are included. The same applies to the Y direction and the Z direction.
[0081] The first unit 3 is housed in the lower cover 24, and the second unit 4 is housed in the upper cover 25 (see Figure 1 ). For example, when an operator (not shown) operates the handle 30, the upper cover 25 rotates relative to the lower cover 24 via the hinge 31. When the upper cover 25 is closed, the first unit 3 and the second unit 4 form a closed space.
[0082] In the present embodiment, the workpiece 2 is irradiated with the ultraviolet light L1 generated by the second unit 4. First, the configuration of the second unit 4 will be described.
[0083] The second unit 4 accommodates the discharge section 6 (see Figure 1The discharge section 6 includes a discharge lamp 15 that emits ultraviolet light L1 and a light extraction window 16 that extracts the ultraviolet light L1 toward the first unit 3 side.
[0084] The discharge lamp 15 typically emits ultraviolet light L1 (also referred to as "vacuum ultraviolet light") having a peak wavelength of less than 200 nm. The discharge lamp 15 is, as an example, an excimer lamp in which Xe (xenon) gas is enclosed as the main luminous gas. In addition, the type of luminous gas of the excimer lamp is appropriately selected according to the wavelength of the ultraviolet light. As an example, the combination of each luminous gas and the peak wavelength is Xe (172 nm), Kr (146 nm), ArF (193 nm), ArBr (165 nm).
[0085] The light extraction window 16 is made of a material that transmits the ultraviolet light L1, such as synthetic quartz glass. In addition, "transmits the ultraviolet light L1" means that the transmittance to the ultraviolet light L1 is 80% or more. In the present embodiment, the first unit 3 and the second unit 4 are spatially separated.
[0086] The first unit 3 accommodates a support table 5 for placing the workpiece 2. Figure 1 As shown, the support table 5 includes a first member 11 on which the workpiece 2 is placed, a second member 12 in contact with a main surface on the −Z side of the first member 11 , and a third member 13 that supports the first member 11 and the second member 12 .
[0087] Figure 2 2 is a top view of the first unit 3 when the upper cover 25 of the processing device 1 is opened and viewed from the +Z direction. Figure 2 The workpiece 2 is omitted in the figure. Figure 2 As shown, when viewed from the +Z direction, the second component 12 is located outside the first component 11 .
[0088] The second member 12 substantially separates the internal space of the first unit 3 into a space S11 on the side where the workpiece 2 is located (hereinafter referred to as the "processing space S11") and a space S12 on the opposite side of the processing space S11 across the second member 12 (hereinafter referred to as the "non-processing space S12") (see Figure 1 ). In more detail, Figure 2 As shown, the area of the path 20 connecting the processing space S11 and the non-processing space S12 when viewed along the Z direction is less than 10% relative to the area of the processing space S11. In other words, the ratio of the area of the support table 5 to the area of the processing space S11 when viewed from the +Z direction is more than 90%.
[0089] As an example, the width D2 of the path 20 is preferably 5 mm or less, more preferably 1 mm or less.
[0090] In view of the durability against ultraviolet light L1, radiant heat from the discharge lamp 15, and ozone described later, the first component 11 and the second component 12 are preferably made of metal materials such as aluminum and stainless steel. For example, as the metal material, aluminum that has been hard anodized can be appropriately cited. The first component 11 and the second component 12 can be made of the same material or different materials. In addition, the first component 11 can also be heated by a heating mechanism not shown in the figure to heat the workpiece 2.
[0091] The third member 13 is configured to be able to move the workpiece 2 placed on the first member 11 in the Z direction. More specifically, the third member 13 can adjust the distance D1 between the main surface on the +Z side of the first member 11 and the light extraction window 16 (see Figure 1 ). As long as the position of the workpiece 2 in the Z direction can be changed, the third component 13 can be configured in any manner. For example, the first component 11 can be moved in the Z direction by driving a motor or the like, or the position of the first component 11 in the Z direction can be changed manually.
[0092] In addition, the first unit 3 has: a gas supply port 9 for introducing a predetermined process gas G1 from an arbitrary gas storage portion 32 into the processing space S11; and an exhaust port 10 for exhausting the gas G2 in the processing space S11 and the non-processing space S12 to the outside. In the present embodiment, the exhaust port 10 is provided at a portion of the second component 12 closer to the -Z side. From the viewpoint that the gas in the non-processing space S12 is difficult to move to the processing space S11 side, the exhaust port 10 is preferably located at a position closer to the -Z side than the second component 12.
[0093] In addition, Figure 1 The figure shows that the air supply port 9 and the exhaust port 10 are also provided on the wall surface on the +X side in the first unit 3, but this is only an example. For example, the exhaust port 10 may also be provided on the wall surface on the -X side, or on the wall surface on the +Y side, the wall surface on the -Y side, or the wall surface (bottom surface) on the -Z side. That is, the air supply port 9 and the exhaust port 10 may be provided on the same wall surface, or on different wall surfaces. Moreover, the air supply port 9 and the exhaust port 10 may also be provided at multiple locations.
[0094] The discharge lamp 15 is turned on to irradiate the workpiece 2 with ultraviolet light L1, thereby cleaning and surface treating the workpiece 2. More specifically, by irradiating the workpiece 2 with ultraviolet light L1, organic molecules on the surface of the workpiece 2 are decomposed or hydrophilic functional groups are generated on the surface of the workpiece 2.
[0095] Here, when the ultraviolet light L1 is absorbed by the oxygen in the processing space S11, the desired processing cannot be performed on the workpiece 2. In view of this situation, a process gas G1 with a low oxygen concentration is introduced from the gas supply port 9 of the first unit 3 to reduce the oxygen concentration in the processing space S11. For example, the process gas G1 is an inert gas such as nitrogen.
[0096] At this time, it takes a certain amount of time from the start of supplying the process gas G1 until the ambient air around the workpiece 2 becomes the desired ambient air. However, in this embodiment, as described above, the internal space of the first unit 3 is substantially separated into the processing space S11 and the non-processing space S12 by the support table 5, more specifically, by the second member 12 of the support table 5. Therefore, the adjustment of the ambient air around the workpiece 2 is completed early.
[0097] That is, the time required from opening the upper cover 25 to placing the workpiece 2 in the first unit 3 to closing the upper cover 25 to complete the adjustment of the atmosphere around the workpiece 2 is shortened. Thus, the productivity of the processing apparatus 1 is improved.
[0098] Whether the adjustment of the atmosphere around the workpiece 2 is completed can be determined by, for example, checking the oxygen concentration of an oxygen concentration sensor (not shown) installed in the processing space S11.
[0099] In addition, the second unit 4 may also have a gas supply port (not shown) different from the gas supply port 9 for introducing a predetermined gas into the second unit 4 in order to adjust the ambient air around the discharge lamp 15. For example, from the viewpoint of suppressing the oxygen existing around the discharge lamp 15 from absorbing the ultraviolet light L1, an inert gas such as nitrogen may be introduced into the second unit 4 to reduce the oxygen concentration around the discharge lamp 15.
[0100] [verify]
[0101] It has been verified that the time required for adjusting the atmosphere around the workpiece 2 can be reduced by substantially separating the internal space of the first unit 3 into the processing space S11 and the non-processing space S12 , and this will be described below.
[0102] By reference Figure 1 as well as Figure 2 This verification was performed using the processing apparatus 1 having the above configuration. In this verification, the time required from the start of introduction of 99.99% pure nitrogen gas at a flow rate of 100 L / min into the gas supply port 9 until the oxygen concentration in the processing space S11 reached 0.1% was measured.
[0103] (Example 1)
[0104] The detailed conditions in Example 1 are as follows.
[0105] Sectional area of the first unit 3 in the XY plane: 2500 cm 2
[0106] The distance D1 ( Figure 1 ): 100mm
[0107] The width D2 ( Figure 2 ): 2mm
[0108] (Example 2)
[0109] The same conditions as those of the first embodiment were used except that the distance D1 was 67 mm.
[0110] (Example 3)
[0111] The same conditions as those of the first embodiment were used except that the distance D1 was 34 mm.
[0112] (Reference Example 1) Under the conditions of the above-mentioned Example 1, the same conditions as those of the above-mentioned Example 1 were used except that the second component 12 was removed. That is, in Reference Example 1, the processing space S11 and the non-processing space S12 were not substantially separated. More specifically, in Reference Example 1, the distance between the first component 11 and the wall surface of the first unit 3 was 75 mm (see also Figure 2 ).
[0113] [Verification results]
[0114] Figure 3 is a graph showing the results of this verification. Figure 3 In FIG. 1 , the horizontal axis represents the time elapsed from the start of the introduction of nitrogen gas, and the vertical axis represents the oxygen concentration in the processing space S11. Figure 3 As shown, it takes about 150 seconds to reduce the oxygen concentration to less than 1% in Reference Example 1. Furthermore, it takes about 250 seconds to reduce the oxygen concentration to about 0.1% in Reference Example 1.
[0115] In contrast, in Example 1, the oxygen concentration was lower than 1% in about 70 seconds and decreased to 0.1% in about 140 seconds. Thus, in Example 1, it is presumed that the reason why the oxygen concentration in the processing space S11 decreased in a shorter time than in Reference Example 1 is that the first unit 3 is substantially separated into the processing space S11 and the non-processing space S12 by the second component 12.
[0116] That is, by introducing nitrogen gas into the processing space S11 in a state where the path 20 is reduced, the pressure in the processing space S11 becomes higher than the pressure in the non-processing space S12. Therefore, the gas in the processing space S11 flows into the non-processing space S12, and the gas in the non-processing space S12 is difficult to flow into the processing space S11. As a result, it is considered that the oxygen concentration in the processing space S11 can be reduced at an early stage.
[0117] In contrast, in Reference Example 1, the distance between the first member 11 and the wall of the first unit 3 is as large as 75 mm, so that the gas on the -Z side of the first member 11 easily flows toward the workpiece 2. Therefore, in Reference Example 1, it is considered that it takes a long time for the oxygen concentration around the workpiece 2 to decrease.
[0118] In addition, according to Examples 2 and 3, as the distance D1 between the first component 11 and the light extraction window 16 decreases, the time required to reduce the oxygen concentration in the processing space S11 becomes shorter. In other words, it can be understood that the size of the processing space S11 required for adjusting the atmosphere is adjusted according to the distance between the workpiece 2 and the light extraction window 16.
[0119] According to this verification, it can be understood that the time required to adjust the atmosphere around the workpiece 2 is shortened by substantially separating the first unit 3 into the processing space S11 and the non-processing space S12. That is, according to the above embodiment, a processing device 1 capable of adjusting the atmosphere around the workpiece 2 early and having high productivity is provided.
[0120] 〈Variation Example〉
[0121] Hereinafter, a modified example of the processing device 1 will be described with reference to the drawings, focusing on the points different from the above-described embodiment.
[0122] 〈1〉 Figure 4 is with Figure 1 Similarly, the accompanying drawings show a modified example of the processing device 1. Figure 4 As shown in FIG. 1 , the second component 12 may also be a structure that abuts against the side surface of the first component 11 and extends in a direction away from the first component 11. In this case, the third component 13 supports the first component 11. In this modification, the material required to constitute the second component 12 is less than that in the above-mentioned embodiment. That is, the cost of constituting the processing device 1 is reduced, and therefore this modification is more excellent.
[0123] 〈2〉In addition, Figure 5 1 is a diagram showing another modified example of the processing device 1. In the above description, the first unit 3 and the second unit 4 are separated in space. However, it is also possible to Figure 5 As shown, a light extraction surface 17 composed of an opening is formed on the surface on the -Z side of the second unit 4, and the first unit 3 and the second unit 4 are spatially connected.
[0124] In this modification, from the viewpoint of adjusting the atmosphere of the internal space of the second unit 4 and the processing space S11, the gas supply port 9 is provided in the second unit 4. For example, by lighting the discharge lamp 15 in a state where the oxygen concentration in both spaces is adjusted, ozone-containing gas G3 is generated in the space and supplied to the workpiece 2 for processing.
[0125] In addition, in the present modification, the reason why the time required to adjust the atmosphere around the workpiece 2 is shortened by substantially separating the first unit 3 is the same as that of the above-mentioned embodiment.
[0126] 〈3〉 Figure 6 1 is a diagram showing still another modified example of the treatment device 1. In the above description, the case where the discharge section 6 is composed of the discharge lamp 15 is described, but it may also be as follows. Figure 6 As shown, the discharge unit 6 is composed of a plasma generating device having a pair of electrodes 18 .
[0127] In this modification, the air supply port 9 is provided in the second unit 4, which can be compared with the reference Figure 5 The situation is the same as described in the discussion.
[0128] In this modification, a high AC voltage is applied to a process gas G1 containing a plasma source such as nitrogen or argon through a pair of electrodes 18, thereby generating a plasma-containing gas G4. Then, the plasma-containing gas G4 is sprayed onto the workpiece 2, thereby processing the workpiece 2. More specifically, the plasma-containing active substances contained in the plasma-containing gas G4 cut off the chemical bonds of the organic molecules on the workpiece 2. As a result, the organic contaminants on the workpiece 2 are removed, or hydrophilic functional groups are formed on the surface of the workpiece 2.
[0129] Here, in order to perform a desired process on the workpiece 2, the atmosphere around the workpiece 2 is adjusted by the process gas G1 before applying a high voltage to the electrode 18. In this modification, as in the above embodiment, the first unit 3 is substantially separated, thereby adjusting the atmosphere around the workpiece 2 in a short time.
[0130] <4> As long as the internal space of the first unit 3 is substantially divided, the shape of the second member 12 of the support platform 5 is arbitrary. Figure 7 2 is a diagram showing another configuration example of the support platform 5. For example, Figure 7 As shown, the second member 12 may have an expandable portion 21 at the periphery of the surface on the −Z side, and may be configured to be expandable and contractible in a direction parallel to the main surface of the first member 11 .
[0131] The expansion and contraction portion 21 of the second member 12 is composed of a tube formed of a rubber material such as fluororubber or silicone rubber. Figure 7 As shown, the surface of the +Z side of the telescopic part 21 is fixed. In addition, by supplying any gas to the telescopic part 21, the telescopic part 21 is extended in the -Z direction and the X direction. Figure 7 In FIG. 1 , the expandable portion 21 in a state where gas is fed is indicated by a dotted line. In addition, the expandable portion 21 can be contracted by discharging the fed gas.
[0132] in addition, Figure 7 This is a cross-sectional view when the processing device 1 is viewed along the Y direction, but when viewed along the X direction, the telescopic portion 21 is telescopic in the -Z direction and the Y direction. That is, the telescopic portion 21 is telescopic in the direction parallel to the XY plane.
[0133] From the viewpoint of adjusting the oxygen concentration of the processing space S11 with high precision, the path 20 connecting the processing space S11 and the non-processing space S12 is preferably smaller. However, when the path 20 is smaller, when the second member 12 moves in the Z direction to adjust the position of the workpiece 2, the risk of collision between the second member 12 and the wall surface of the first unit 3 due to vibration etc. increases. In contrast, by having the telescopic portion 21 in the second member 12, the telescopic portion 21 can be extended after the position of the workpiece 2 is adjusted to reduce the path 20.
[0134] In addition, for example, the periphery of the second member 12 may be foldable. In this case, the second member 12 can be extended and retracted in the XY plane by switching the periphery between the folded state and the unfolded state.
[0135] 〈5〉 Figure 8 1 is a diagram showing still another configuration example of the support platform 5. In the above description, the case where the second member 12 substantially separates the internal space of the first unit 3 is described, but it may also be the case that Figure 8 As shown, the first component 11 substantially separates the inner space of the first unit 3 .
[0136] 〈6〉 Fig. 9 1 is a diagram showing another configuration example of the first unit 3. In the above description, the exhaust port 10 is provided in the non-processing space S12. However, in the present invention, the position of the exhaust port 10 is arbitrary. Fig. 9 As shown, the exhaust port 10 is provided at a portion of the +Z side of the second member 12 and is located in the processing space S11. Alternatively, the exhaust port 10 may be provided in both the processing space S11 and the non-processing space S12.
[0137] like Fig. 9As shown, when the exhaust port 10 is provided on the +Z side of the second member 12, it can be inferred that by substantially separating the first unit 3 into the processing space S11 and the non-processing space S12, the time required for adjusting the atmosphere of the processing space S11 is shortened.
[0138] In addition, from the viewpoint of suppressing the convection of gas in the non-processing space S12 and the inflow of gas around the workpiece 2, it is preferable to Figure 7 As described above, the second member 12 is configured to be retractable relative to the XY plane. That is, when the process gas G1 is introduced into the processing space S11, the second member 12 is preferably extended to abut against the wall surface of the first unit 3, thereby closing the path 20 or reducing the path 20. As a result, the gas in the non-processing space S12 is suppressed from flowing into the vicinity of the workpiece 2, and as a result, the adjustment of the atmosphere around the workpiece 2 can be adjusted earlier.
[0139] <7> The above-mentioned embodiments and modifications can be implemented in combination as appropriate.
Claims
1. A processing device, characterized in that: have: A support table for placing workpieces; A first unit storing the support platform; A second unit is disposed adjacent to the first unit and contains a discharge portion formed by a discharge lamp or a plasma generating device; as well as A gas supply port for introducing gas into the first unit, A closed space is formed by the first unit and the second unit. The second unit supplies ultraviolet light or plasma-containing gas generated by the discharge portion toward the support table. The support table is configured to be able to move the workpiece in a first direction in which the first unit and the second unit are adjacent to each other, and to substantially separate the internal space of the first unit in the first direction.
2. The processing device according to claim 1, characterized in that The support platform has: a first member supporting the workpiece; and The second component substantially separates the inner space of the first unit in the first direction.
3. The processing device according to claim 2, characterized in that The second member is in contact with a main surface of the first member on the opposite side to the second unit.
4. The processing device according to claim 2, characterized in that The second component abuts against a side surface of the first component.
5. The processing device according to claim 3, characterized in that The support table has a third member capable of supporting the second member and moving the second member and the first member in the first direction.
6. The processing device according to claim 2, characterized in that The first unit has an exhaust port for exhausting the atmosphere in the first unit to the outside at a portion of the first unit on the opposite side to the second unit in the first direction with respect to the second member.
7. The processing device according to claim 2, characterized in that The second member is configured to be extendable and retractable in a direction parallel to a main surface of the first member.
8. The processing device according to claim 1, characterized in that The discharge section is composed of a discharge lamp and has a light extraction window for extracting ultraviolet light generated by the discharge lamp toward the first unit. The first unit is spatially separated from the second unit.
9. The processing device according to claim 1, characterized in that The discharge section is composed of a plasma generating device, The first unit is spatially connected with the second unit.
